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Zheng T, Pan Y, Yang M, Li Z, Zheng Z, Li L, Sun Y, He Y, Wang Q, Cao T, Huo N, Chen Z, Gao W, Xu H, Li J. 2D Free-Standing GeS 1-xSe x with Composition-Tunable Bandgap for Tailored Polarimetric Optoelectronics. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024:e2313721. [PMID: 38669677 DOI: 10.1002/adma.202313721] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/15/2023] [Revised: 03/30/2024] [Indexed: 04/28/2024]
Abstract
Germanium-based monochalcogenides (i.e., GeS and GeSe) with desirable properties are promising candidates for the development of next-generation optoelectronic devices. However, they are still stuck with challenges, such as relatively fixed electronic band structure, unconfigurable optoelectronic characteristics, and difficulty in achieving free-standing growth. Herein, it is demonstrated that two-dimensional (2D) free-standing GeS1-xSex (0 ≤ x ≤ 1) nanoplates can be grown by low-pressure rapid physical vapor deposition (LPRPVD), fulfilling a continuously composition-tunable optical bandgap and electronic band structure. By leveraging the synergistic effect of composition-dependent modulation and free-standing growth, GeS1-xSex-based optoelectronic devices exhibit significantly configurable hole mobility from 6.22 × 10-4 to 1.24 cm2V-1s⁻1 and tunable responsivity from 8.6 to 311 A W-1 (635 nm), as x varies from 0 to 1. Furthermore, the polarimetric sensitivity can be tailored from 4.3 (GeS0.29Se0.71) to 1.8 (GeSe) benefiting from alloy engineering. Finally, the tailored imaging capability is also demonstrated to show the application potential of GeS1-xSex alloy nanoplates. This work broadens the functionality of conventional binary materials and motivates the development of tailored polarimetric optoelectronic devices.
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Affiliation(s)
- Tao Zheng
- Guangdong Provincial Key Laboratory of Chip and Integration Technology, School of Semiconductor Science and Technology, Faculty of Engineering, South China Normal University, Foshan, 528225, P. R. China
| | - Yuan Pan
- Guangdong Provincial Key Laboratory of Chip and Integration Technology, School of Semiconductor Science and Technology, Faculty of Engineering, South China Normal University, Foshan, 528225, P. R. China
| | - Mengmeng Yang
- Guangdong Provincial Key Laboratory of Chip and Integration Technology, School of Semiconductor Science and Technology, Faculty of Engineering, South China Normal University, Foshan, 528225, P. R. China
| | - Zhongming Li
- Guangdong Provincial Key Laboratory of Chip and Integration Technology, School of Semiconductor Science and Technology, Faculty of Engineering, South China Normal University, Foshan, 528225, P. R. China
| | - Zhaoqiang Zheng
- College of Materials and Energy, Guangdong University of Technology, Guangzhou, 510006, P. R. China
| | - Ling Li
- Guangdong Provincial Key Laboratory of Chip and Integration Technology, School of Semiconductor Science and Technology, Faculty of Engineering, South China Normal University, Foshan, 528225, P. R. China
| | - Yiming Sun
- Guangdong Provincial Key Laboratory of Chip and Integration Technology, School of Semiconductor Science and Technology, Faculty of Engineering, South China Normal University, Foshan, 528225, P. R. China
| | - Yingbo He
- Guangdong Provincial Key Laboratory of Chip and Integration Technology, School of Semiconductor Science and Technology, Faculty of Engineering, South China Normal University, Foshan, 528225, P. R. China
| | - Quanhao Wang
- Guangdong Provincial Key Laboratory of Chip and Integration Technology, School of Semiconductor Science and Technology, Faculty of Engineering, South China Normal University, Foshan, 528225, P. R. China
| | - Tangbiao Cao
- Guangdong Provincial Key Laboratory of Chip and Integration Technology, School of Semiconductor Science and Technology, Faculty of Engineering, South China Normal University, Foshan, 528225, P. R. China
| | - Nengjie Huo
- Guangdong Provincial Key Laboratory of Chip and Integration Technology, School of Semiconductor Science and Technology, Faculty of Engineering, South China Normal University, Foshan, 528225, P. R. China
| | - Zuxin Chen
- Guangdong Provincial Key Laboratory of Chip and Integration Technology, School of Semiconductor Science and Technology, Faculty of Engineering, South China Normal University, Foshan, 528225, P. R. China
| | - Wei Gao
- Guangdong Provincial Key Laboratory of Chip and Integration Technology, School of Semiconductor Science and Technology, Faculty of Engineering, South China Normal University, Foshan, 528225, P. R. China
| | - Hua Xu
- School of Materials Science and Engineering, Shaanxi Normal University, Xi'an, 710119, P. R. China
| | - Jingbo Li
- Guangdong Provincial Key Laboratory of Chip and Integration Technology, School of Semiconductor Science and Technology, Faculty of Engineering, South China Normal University, Foshan, 528225, P. R. China
- College of Optical Science and Engineering, Zhejiang University, Hangzhou, 310027, P. R. China
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2
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Wang M, Lin Y. Gallium-based liquid metals as reaction media for nanomaterials synthesis. NANOSCALE 2024; 16:6915-6933. [PMID: 38501969 DOI: 10.1039/d3nr06566a] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 03/20/2024]
Abstract
Gallium-based liquid metals (LMs) and their alloys have gained prominence in the realm of flexible and stretchable electronics. Recent advances have expanded the interest to explore the electron-rich core and interface of LMs to synthesize various nanomaterials, where Ga-based LMs serve as versatile reaction media. In this paper, we delve into the latest developments within this burgeoning field. Our discussion begins by elucidating the unique attributes of LMs that render them suitable as reaction media, including their high metal solubility, low standard reduction potential, self-limiting oxidation and ultra-smooth and "layer" surface. We then provide a comprehensive categorized summary of utilizing these features to fabricate a variety of nanomaterials, including pure metallic materials (metal alloys, metal crystals, porous metals, high-entropy alloys and metallic single atoms), metal-inorganic compounds (2D metal oxides, 2D metallic inorganic compounds and 2D graphitic materials), as well as metal-organic composites (metal-organic frameworks). This paper concludes by discussing the current challenges in this field and exploring potential future directions. The versatility and unique properties of Ga-based LMs are poised to play a pivotal role in the future of nanomaterial science, paving the way for more efficient, sustainable, and innovative technological solutions.
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Affiliation(s)
- Ming Wang
- Department of Chemical and Biomolecular Engineering, National University of Singapore, Engineering Drive 4, 117585, Singapore.
| | - Yiliang Lin
- Department of Chemical and Biomolecular Engineering, National University of Singapore, Engineering Drive 4, 117585, Singapore.
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Du Y, Yin S, Li Y, Chen J, Shi D, Guo E, Zhang H, Wang Z, Qin Q, Zou C, Zhai T, Li L. Liquid-Metal-Assisted Synthesis of Patterned GaN Thin Films for High-Performance UV Photodetectors Array. SMALL METHODS 2024; 8:e2300175. [PMID: 37317014 DOI: 10.1002/smtd.202300175] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/10/2023] [Revised: 05/31/2023] [Indexed: 06/16/2023]
Abstract
GaN's outstanding physical characteristics allow for a wide range of applications in numerous industries. Although individual GaN-based ultraviolet (UV) photodetectors are the subject of in-depth research in recent decades, the demand for photodetectors array is rising as a result of advances in optoelectronic integration technology. However, as a prerequisite for constructing GaN-based photodetectors array, large-area, patterned synthesis of GaN thin films remains a certain challenge. This work presents a facile technique for pattern growing high-quality GaN thin films for the assembly of an array of high-performance UV photodetectors. This technique uses UV lithography, which is not only very compatible with common semiconductor manufacturing techniques, but also enables precise patterning modification. A typical detector has impressive photo-response performance under 365 nm irradiation, with an extremely low dark current of 40 pA, a high Ilight /Idark ratio over 105 , a high responsivity of 4.23 AW-1 , and a decent specific detectivity of 1.76 × 1012 Jones. Additional optoelectronic studies demonstrate the strong homogeneity and repeatability of the photodetectors array, enabling it to serve as a reliable UV image sensor with enough spatial resolution. These outcomes highlight the proposed patterning technique's enormous potential.
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Affiliation(s)
- Yuchen Du
- Information Materials and Intelligent Sensing Laboratory of Anhui Province, Institutes of Physical Science and Information Technology, Anhui University, Hefei, 230601, P. R. China
| | - Shiqi Yin
- Information Materials and Intelligent Sensing Laboratory of Anhui Province, Institutes of Physical Science and Information Technology, Anhui University, Hefei, 230601, P. R. China
| | - Ying Li
- Information Materials and Intelligent Sensing Laboratory of Anhui Province, Institutes of Physical Science and Information Technology, Anhui University, Hefei, 230601, P. R. China
| | - Jiawang Chen
- Key Laboratory of Materials Physics, Anhui Key Laboratory of Nanomaterials and Nanotechnology, Institute of Solid State Physics, Hefei Institutes of Physical Science, Chinese Academy of Sciences, Hefei, 230031, P. R. China
| | - Dongfeng Shi
- Key Laboratory of Atmospheric Optics, Anhui Institute of Optics and Fine Mechanics, Hefei Institutes of Physical Science, Chinese Academy of Sciences, Hefei, 230031, P. R. China
- Advanced Laser Technology Laboratory of Anhui Province, Hefei, 230037, P. R. China
| | - Erjuan Guo
- State Key Laboratory of Materials Processing and Die and Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology (HUST), Wuhan, 430074, P. R. China
| | - Hui Zhang
- Information Materials and Intelligent Sensing Laboratory of Anhui Province, Institutes of Physical Science and Information Technology, Anhui University, Hefei, 230601, P. R. China
| | - Zihan Wang
- Information Materials and Intelligent Sensing Laboratory of Anhui Province, Institutes of Physical Science and Information Technology, Anhui University, Hefei, 230601, P. R. China
| | - Qinggang Qin
- Information Materials and Intelligent Sensing Laboratory of Anhui Province, Institutes of Physical Science and Information Technology, Anhui University, Hefei, 230601, P. R. China
| | - Chongwen Zou
- National Synchrotron Radiation Laboratory, University of Science & Technology of China, Hefei, 230029, P. R. China
| | - Tianyou Zhai
- State Key Laboratory of Materials Processing and Die and Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology (HUST), Wuhan, 430074, P. R. China
| | - Liang Li
- Information Materials and Intelligent Sensing Laboratory of Anhui Province, Institutes of Physical Science and Information Technology, Anhui University, Hefei, 230601, P. R. China
- Key Laboratory of Materials Physics, Anhui Key Laboratory of Nanomaterials and Nanotechnology, Institute of Solid State Physics, Hefei Institutes of Physical Science, Chinese Academy of Sciences, Hefei, 230031, P. R. China
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4
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Lee H, Heo E, Yoon H. Physically Exfoliating 2D Materials: A Versatile Combination of Different Materials into a Layered Structure. LANGMUIR : THE ACS JOURNAL OF SURFACES AND COLLOIDS 2023; 39:18678-18695. [PMID: 38095583 DOI: 10.1021/acs.langmuir.3c02418] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 12/27/2023]
Abstract
Improving the properties of the existing two-dimensional (2D) materials is a major concern for many researchers today. Synergistic coupling of single-phase 2D material species with secondary functional materials has resulted in 2D nanohybrids with significantly enhanced properties beyond the sum of their individual components. In particular, nanohybrids created by alternatingly integrating different material species in the confined 2D nanometer regime have the potential to meet the needs of a wide variety of applications, particularly the many important energy-related applications that are of interest. However, scaling up production of 2D nanohybrids is still challenging, which is a major barrier to their practical application. Delamination and exfoliation by physical means separate the weakly bound 2D nanosheets into kinetically stable single- or few-layers. Herein, we provide a concise overview of recent achievements in the physical exfoliation-based fabrication of 2D nanohybrids featuring controlled heterolayered structures. Several strategies to efficiently produce heterolayered 2D nanohybrids in large quantities are described, such as (i) coexfoliation of different 2D species, (ii) aqueous-phase synthesis, and (iii) gas-phase synthesis. The versatility of the 2D nanohybrids was also illustrated by remarkable research examples, especially in energy-related applications.
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Affiliation(s)
- Haney Lee
- Department of Polymer Engineering, Graduate School, Chonnam National University, 77 Yongbong-ro, Buk-gu, Gwangju 61186, South Korea
| | - Eunseo Heo
- Department of Polymer Engineering, Graduate School, Chonnam National University, 77 Yongbong-ro, Buk-gu, Gwangju 61186, South Korea
| | - Hyeonseok Yoon
- Department of Polymer Engineering, Graduate School, Chonnam National University, 77 Yongbong-ro, Buk-gu, Gwangju 61186, South Korea
- School of Polymer Science and Engineering, Chonnam National University, 77 Yongbong-ro, Buk-gu, Gwangju 61186, South Korea
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5
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Mu H, Zhuang R, Cui N, Cai S, Yu W, Yuan J, Zhang J, Liu H, Mei L, He X, Mei Z, Zhang G, Bao Q, Lin S. Alternating BiI 3-BiI van der Waals Photodetector with Low Dark Current and High-Performance Photodetection. ACS NANO 2023; 17:21317-21327. [PMID: 37862706 DOI: 10.1021/acsnano.3c05849] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 10/22/2023]
Abstract
The emerging two-dimensional (2D) van der Waals (vdW) materials and their heterostructures hold great promise for optoelectronics and photonic applications beyond strictly lattice-matching constraints and grade interfaces. However, previous photodetectors and optoelectronic devices rely on relatively simple vdW heterostructures with one or two blocks. The realization of high-order heterostructures has been exponentially challenging due to conventional layer-by-layer arduous restacking or sequential synthesis. In this study, we present an approach involving the direct exfoliation of high-quality BiI3-BiI heterostructure nanosheets with alternating blocks, derived from solution-grown binary heterocrystals. These heterostructure-based photodetectors offer several notable advantages. Leveraging the "active layer energetics" of BiI layers and the establishment of a significant depletion region, our photodetector demonstrates a significant reduction in dark current compared with pure BiI3 devices. Specifically, the photodetector achieves an extraordinarily low dark current (<9.2 × 10-14 A at 5 V bias voltage), an impressive detectivity of 8.8 × 1012 Jones at 638 nm, and a rapid response time of 3.82 μs. These characteristics surpass the performance of other metal-semiconductor-metal (MSM) photodetectors based on various 2D materials and structures at visible wavelengths. Moreover, our heterostructure exhibits a broad-band photoresponse, covering the visible, near-infrared (NIR)-I, and NIR-II regions. In addition to these promising results, our heterostructure also demonstrated the potential for flexible and imaging applications. Overall, our study highlights the potential of alternating vdW heterostructures for future optoelectronics with low power consumption, fast response, and flexible requirements.
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Affiliation(s)
- Haoran Mu
- Songshan Lake Materials Laboratory, Dongguan 523808, P. R. China
| | - Renzhong Zhuang
- Fujian Provincial Key Laboratory of Welding Quality Intelligent Evaluation, Longyan University, Longyan 364012, P. R. China
| | - Nan Cui
- Songshan Lake Materials Laboratory, Dongguan 523808, P. R. China
| | - Songhua Cai
- Department of Applied Physics, The Hong Kong Polytechnic University, Hunghom, Kowloon 999077, Hong Kong, P. R. China
| | - Wenzhi Yu
- Songshan Lake Materials Laboratory, Dongguan 523808, P. R. China
| | - Jian Yuan
- School of Physics and Electronic Information, Huaibei Normal University, Huaibei 235000, P. R. China
| | - Jingni Zhang
- Songshan Lake Materials Laboratory, Dongguan 523808, P. R. China
| | - Hao Liu
- Songshan Lake Materials Laboratory, Dongguan 523808, P. R. China
| | - Luyao Mei
- Songshan Lake Materials Laboratory, Dongguan 523808, P. R. China
| | - Xiaoyue He
- Songshan Lake Materials Laboratory, Dongguan 523808, P. R. China
| | - Zengxia Mei
- Songshan Lake Materials Laboratory, Dongguan 523808, P. R. China
| | - Guangyu Zhang
- Songshan Lake Materials Laboratory, Dongguan 523808, P. R. China
- Institute of Physics, Chinese Academy of Science, Beijing 100190, P. R. China
| | - Qiaoliang Bao
- Institute of Energy Materials Science (IEMS), University of Shanghai for Science and Technology, Shanghai 200093, P. R. China
| | - Shenghuang Lin
- Songshan Lake Materials Laboratory, Dongguan 523808, P. R. China
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6
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Yoo C, Adepu V, Han SS, Kim JH, Shin JC, Cao J, Park J, Al Mahfuz MM, Tetard L, Lee GH, Ko DK, Sahatiya P, Jung Y. Low-Temperature Centimeter-Scale Growth of Layered 2D SnS for Piezoelectric Kirigami Devices. ACS NANO 2023; 17:20680-20688. [PMID: 37831937 DOI: 10.1021/acsnano.3c08826] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 10/15/2023]
Abstract
Tin monosulfide (SnS) is a promising piezoelectric material with an intrinsically layered structure, making it attractive for self-powered wearable and stretchable devices. However, for practical application purposes, it is essential to improve the output and manufacturing compatibility of SnS-based piezoelectric devices by exploring their large-area synthesis principle. In this study, we report the chemical vapor deposition (CVD) growth of centimeter-scale two-dimensional (2D) SnS layers at temperatures as low as 200 °C, allowing compatibility with processing a range of polymeric substrates. The intrinsic piezoelectricity of 2D SnS layers directly grown on polyamides (PIs) was confirmed by piezoelectric force microscopy (PFM) phase maps and force-current corroborative measurements. Furthermore, the structural robustness of the centimeter-scale 2D SnS layers/PIs allowed for engraving complicated kirigami patterns on them. The kirigami-patterned 2D SnS layer devices exhibited intriguing strain-tolerant piezoelectricity, which was employed in detecting human body motions and generating photocurrents irrespective of strain rate variations. These results establish the great promise of 2D SnS layers for practically relevant large-scale device technologies with coupled electrical and mechanical properties.
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Affiliation(s)
- Changhyeon Yoo
- NanoScience Technology Center, University of Central Florida, Orlando, Florida 32826, United States
| | - Vivek Adepu
- NanoScience Technology Center, University of Central Florida, Orlando, Florida 32826, United States
- Department of Electrical and Electronics Engineering, Birla Institute of Technology and Science Pilani Hyderabad Campus, Hyderabad, 500078, India
| | - Sang Sub Han
- NanoScience Technology Center, University of Central Florida, Orlando, Florida 32826, United States
| | - Jung Han Kim
- Department of Materials Science and Engineering, Dong-A University, Busan 49315, Republic of Korea
| | - June-Chul Shin
- NanoScience Technology Center, University of Central Florida, Orlando, Florida 32826, United States
- Department of Materials Science and Engineering, Seoul National University, Seoul 08826, Republic of Korea
| | - Justin Cao
- NanoScience Technology Center, University of Central Florida, Orlando, Florida 32826, United States
- Department of Materials Science and Engineering, University of Central Florida, Orlando, Florida 32816, United States
| | - Junsung Park
- Department of Electrical and Computer Engineering, New Jersey Institute of Technology, Newark, New Jersey 07102, United States
| | - Mohammad M Al Mahfuz
- Department of Electrical and Computer Engineering, New Jersey Institute of Technology, Newark, New Jersey 07102, United States
| | - Laurene Tetard
- NanoScience Technology Center, University of Central Florida, Orlando, Florida 32826, United States
- Physics Department, University of Central Florida, Orlando, Florida, 32816, United States
| | - Gwan-Hyoung Lee
- Department of Materials Science and Engineering, Seoul National University, Seoul 08826, Republic of Korea
| | - Dong-Kyun Ko
- Department of Electrical and Computer Engineering, New Jersey Institute of Technology, Newark, New Jersey 07102, United States
| | - Parikshit Sahatiya
- Department of Electrical and Electronics Engineering, Birla Institute of Technology and Science Pilani Hyderabad Campus, Hyderabad, 500078, India
| | - Yeonwoong Jung
- NanoScience Technology Center, University of Central Florida, Orlando, Florida 32826, United States
- Department of Materials Science and Engineering, University of Central Florida, Orlando, Florida 32816, United States
- Department of Electrical and Computer Engineering, University of Central Florida, Orlando, Florida 32816, United States
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Wei J, Yu H, He Q, Wu D, Xie Y, Lin C. Broadband SnS/Te photodetector to long-wavelength infrared: breaking the spectrum limit through alloy engineering. OPTICS EXPRESS 2023; 31:32591-32600. [PMID: 37859059 DOI: 10.1364/oe.495083] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/08/2023] [Accepted: 09/05/2023] [Indexed: 10/21/2023]
Abstract
Materials based on group IV chalcogenides, are considered to be one of the most promising materials for high-performance, broadband photodetectors due to their wide bandgap coverage, intriguing chemical bonding and excellent physical properties. However, the reported photodetectors based on SnS are still worked at relatively narrow near-infrared band (as far as 1550 nm) hampered by the nonnegligible bandgap of 1.1-1.5 eV. Here, a novel photodetector based on Te alloyed SnS thin film was demonstrated with an ultra-broadband response up to 10.6 µm. By controlling the Te alloyed concentration in SnS increasing to 37.64%, the bandgap narrows to 0.23 eV, exhibiting a photoresponse potential at long-wavelength infrared excitation. Our results show Te-alloying can remarkably enhance the detection properties of SnS/Te photodetectors. The photoresponsivity and detectivity of 1.59 mA/W and 2.3 × 108 Jones were realized at 10.6 µm at room temperature. Moreover, the nonzero photogain was observed generated by nonlinearly increased photocurrent density, resulting in a superlinear dependency between photoresponsivity and light intensity. Our studies successfully broaden photoresponse spectrum of SnS toward the mid-infrared range for the first time. It also suggests that alloying is an effective technique for tuning the band edges of group IV chalcogenides, contributing deep implications for developing future optoelectronic applications.
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Zhang X, Shi Y, Shi Z, Xia H, Ma M, Wang Y, Huang K, Wu Y, Gong Y, Fei H, He Y, Ye G. High-Pressure Synthesis of Single-Crystalline SnS Nanoribbons. NANO LETTERS 2023; 23:7449-7455. [PMID: 37556377 DOI: 10.1021/acs.nanolett.3c01879] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 08/11/2023]
Abstract
Two-dimensional tin monosulfide (SnS) is attractive for the development of electronic and optoelectronic devices with anisotropic characteristics. However, its shape-controlled synthesis with an atomic thickness and high quality remains challenging. Here, we show that highly crystalline SnS nanoribbons can be produced via high-pressure (0.5 GPa) and thermal treatment (400 °C). These SnS nanoribbons have a length of several tens of micrometers and a thickness down to 5.8 nm, giving an average aspect ratio of ∼30.6. The crystal orientation along the zigzag direction and the in-plane structural anisotropy of the SnS nanoribbons are identified by transmission electron microscopy and polarized Raman spectroscopy, respectively. An ionic liquid-gated field-effect transistor fabricated using the SnS nanoribbon exhibits an on/off current ratio of >103 and a field-effect mobility of ∼0.7 cm2 V-1 s-1. This work provides a unique way to achieve one-dimensional growth of SnS.
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Affiliation(s)
- Xinyu Zhang
- College of Chemistry and Chemical Engineering, Hunan University, Changsha 410082, China
| | - Yuyang Shi
- School of Science, Wuhan University of Technology, Wuhan 430070, China
| | - Zude Shi
- College of Chemistry and Chemical Engineering, Hunan University, Changsha 410082, China
| | - Hang Xia
- College of Chemistry and Chemical Engineering, Hunan University, Changsha 410082, China
| | - Mingyu Ma
- Key Laboratory for Magnetism and Magnetic Materials of the Ministry of Education, School of Physical Science & Technology, Lanzhou University, Lanzhou 730000, China
| | - Yiliu Wang
- College of Physics and Electronics, Hunan University, Changsha 410082, China
| | - Kang Huang
- College of Chemistry and Chemical Engineering, Hunan University, Changsha 410082, China
| | - Ye Wu
- School of Science, Wuhan University of Technology, Wuhan 430070, China
| | - Yongji Gong
- School of Materials Science and Engineering, Beihang University, Beijing 100191, China
| | - Huilong Fei
- College of Chemistry and Chemical Engineering, Hunan University, Changsha 410082, China
| | - Yongmin He
- College of Chemistry and Chemical Engineering, Hunan University, Changsha 410082, China
| | - Gonglan Ye
- College of Chemistry and Chemical Engineering, Hunan University, Changsha 410082, China
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9
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He W, Kong L, Yu P, Yang G. Record-High Work-Function p-Type CuBiP 2 Se 6 Atomic Layers for High-Photoresponse van der Waals Vertical Heterostructure Phototransistor. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023; 35:e2209995. [PMID: 36640444 DOI: 10.1002/adma.202209995] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/28/2022] [Revised: 01/04/2023] [Indexed: 06/17/2023]
Abstract
The notable lack of intrinsic p-type 2D layered semiconductors has hindered the engineering of 2D devices for complementary metal oxide semiconductors (CMOSs). Herein, a novel quaternary intrinsic p-type 2D semiconductor, CuBiP2 Se6 atomic layers, is introduced into the 2D family. The semiconductor displays a high work function of 5.26 eV, a moderate hole mobility of 1.72 cm2 V-1 s-1 , and an ultrahigh on/off current exceeding 106 at room temperature. To date, 5.26 eV is the highest work-function recorded in p-type 2D materials, indicating the ultrastable p-type behavior of CuBiP2 Se6 . Additionally, a multilayer graphene/CuBiP2 Se6 /multilayer graphene (MLG/CBPS/MLG)-based fully vertical van der Waals heterostructure phototransistor is designed and fabricated. This device exhibits outstanding optoelectronic performance with a responsivity (R) of 4.9 × 104 A W-1 , an external quantum efficiency (EQE) of 1.5 × 107 %, a detectivity (D) of 1.14 × 1013 Jones, and a broad working wavelength (400-1100 nm), respectively. This is comparable to state-of-the-art 2D devices. Such excellent performance is attributed to the ultrashort transmit length and nondestructive/defect-free contacts. This leads to faster response speed and eliminates Fermi-level pinning effects. Moreover, ultrahigh responsivity and detectivity endow the device with applaudable imaging sensing capability. These results make CuBiP2 Se6 an ideal p-type candidate material for next-generation CMOSs logic devices.
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Affiliation(s)
- Wei He
- State Key Laboratory of Optoelectronic Materials and Technologies, Guangzhou Key Laboratory of Flexible Electronic Materials and Wearable Devices, Nanotechnology Research Center, School of Materials Science and Engineering, Sun Yat-sen University, Guangzhou, 510275, P. R. China
| | - Lingling Kong
- State Key Laboratory of Optoelectronic Materials and Technologies, Guangzhou Key Laboratory of Flexible Electronic Materials and Wearable Devices, Nanotechnology Research Center, School of Materials Science and Engineering, Sun Yat-sen University, Guangzhou, 510275, P. R. China
| | - Peng Yu
- State Key Laboratory of Optoelectronic Materials and Technologies, Guangzhou Key Laboratory of Flexible Electronic Materials and Wearable Devices, Nanotechnology Research Center, School of Materials Science and Engineering, Sun Yat-sen University, Guangzhou, 510275, P. R. China
| | - Guowei Yang
- State Key Laboratory of Optoelectronic Materials and Technologies, Guangzhou Key Laboratory of Flexible Electronic Materials and Wearable Devices, Nanotechnology Research Center, School of Materials Science and Engineering, Sun Yat-sen University, Guangzhou, 510275, P. R. China
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Hei J, Li X, Wu S, Lin P, Shi Z, Tian Y, Li X, Zeng L, Yu X, Wu D. Wafer-Scale Patterning Synthesis of Two-Dimensional WSe 2 Layers by Direct Selenization for Highly Sensitive van der Waals Heterojunction Broadband Photodetectors. ACS APPLIED MATERIALS & INTERFACES 2023; 15:12052-12060. [PMID: 36848604 DOI: 10.1021/acsami.2c22409] [Citation(s) in RCA: 2] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/18/2023]
Abstract
Two-dimensional (2D) transition-metal dichalcogenides (TMDs) exhibit promising potential in fabricating highly sensitive photodetectors due to their unique electrical and optoelectrical characteristics. However, micron-sized 2D materials produced by conventional chemical vapor deposition (CVD) and mechanical exfoliation methods fail to satisfy the demands for applications in integrated optoelectronics and systems given their poor controllability and repeatability. Here, we propose a simple selenization approach to grow wafer-scale (2 in.) 2D p-WSe2 layers with high uniformity and customized patterns. Furthermore, a self-driven broadband photodetector with a p-WSe2/n-Si van der Waals heterojunction has been in situ fabricated with a satisfactory responsivity of 689.8 mA/W and a large specific detectivity of 1.59 × 1013 Jones covering from ultraviolet to short-wave infrared. In addition, a remarkable nanosecond response speed has been recorded under 0.5% duty cycle of the input light. The proposed selenization approach on the growth of 2D WSe2 layers demonstrates an effective route to fabricate highly sensitive broadband photodetectors used for integrated optoelectronic systems.
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Affiliation(s)
- Jinjin Hei
- School of Physics and Microelectronics, and Key Laboratory of Material Physics, Ministry of Education, Zhengzhou University, Zhengzhou, Henan 450052, China
| | - Xue Li
- School of Physics and Microelectronics, and Key Laboratory of Material Physics, Ministry of Education, Zhengzhou University, Zhengzhou, Henan 450052, China
| | - Shuoen Wu
- Department of Electrical and Computer Engineering, University of California San Diego, La Jolla, California 92093, United States
| | - Pei Lin
- School of Physics and Microelectronics, and Key Laboratory of Material Physics, Ministry of Education, Zhengzhou University, Zhengzhou, Henan 450052, China
| | - Zhifeng Shi
- School of Physics and Microelectronics, and Key Laboratory of Material Physics, Ministry of Education, Zhengzhou University, Zhengzhou, Henan 450052, China
| | - Yongtao Tian
- School of Physics and Microelectronics, and Key Laboratory of Material Physics, Ministry of Education, Zhengzhou University, Zhengzhou, Henan 450052, China
| | - Xinjian Li
- School of Physics and Microelectronics, and Key Laboratory of Material Physics, Ministry of Education, Zhengzhou University, Zhengzhou, Henan 450052, China
| | - Longhui Zeng
- Department of Electrical and Computer Engineering, University of California San Diego, La Jolla, California 92093, United States
| | - Xuechao Yu
- Key Laboratory of Multifunctional Nanomaterials and Smart Systems, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou, Jiangsu 215123, China
| | - Di Wu
- School of Physics and Microelectronics, and Key Laboratory of Material Physics, Ministry of Education, Zhengzhou University, Zhengzhou, Henan 450052, China
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11
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Sarkar AS, Konidakis I, Gagaoudakis E, Maragkakis GM, Psilodimitrakopoulos S, Katerinopoulou D, Sygellou L, Deligeorgis G, Binas V, Oikonomou IM, Komninou P, Kiriakidis G, Kioseoglou G, Stratakis E. Liquid Phase Isolation of SnS Monolayers with Enhanced Optoelectronic Properties. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2023; 10:e2201842. [PMID: 36574469 PMCID: PMC9951343 DOI: 10.1002/advs.202201842] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 08/15/2022] [Revised: 11/20/2022] [Indexed: 06/17/2023]
Abstract
Recent advances in atomically thin two dimensional (2D) anisotropic group IVA -VI metal monochalcogenides (MMCs) and their fascinating intrinsic properties and potential applications are hampered due to an ongoing challenge of monolayer isolation. Among the most promising MMCs, tin (II) sulfide (SnS) is an earth-abundant layered material with tunable bandgap and anisotropic physical properties, which render it extraordinary for electronics and optoelectronics. To date, however, the successful isolation of atomically thin SnS single layers at large quantities has been challenging due to the presence of strong interlayer interactions, attributed to the lone-pair electrons of sulfur. Here, a novel liquid phase exfoliation approach is reported, which enables the overcome of such strong interlayer binding energy. Specifically, it demonstrates that the synergistic action of external thermal energy with the ultrasound energy-induced hydrodynamic force in solution gives rise to the systematic isolation of highly crystalline SnS monolayers (1L-SnS). It is shown that the exfoliated 1L-SnS crystals exhibit high carrier mobility and deep-UV spectral photodetection, featuring a fast carrier response time of 400 ms. At the same time, monolayer-based SnS transistor devices fabricated from solution present a high on/off ratio, complemented with a responsivity of 6.7 × 10-3 A W-1 and remarkable stability upon prolonged operation in ambient conditions. This study opens a new avenue for large-scale isolation of highly crystalline SnS and other MMC manolayers for a wide range of applications, including extended area nanoelectronic devices, printed from solution.
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Affiliation(s)
- Abdus Salam Sarkar
- Institute of Electronic Structure and LaserFoundation for Research and Technology‐HellasHeraklion700 13Greece
| | - Ioannis Konidakis
- Institute of Electronic Structure and LaserFoundation for Research and Technology‐HellasHeraklion700 13Greece
| | - E. Gagaoudakis
- Institute of Electronic Structure and LaserFoundation for Research and Technology‐HellasHeraklion700 13Greece
| | - G. M. Maragkakis
- Institute of Electronic Structure and LaserFoundation for Research and Technology‐HellasHeraklion700 13Greece
- Department of PhysicsUniversity of CreteHeraklion710 03Greece
| | - S. Psilodimitrakopoulos
- Institute of Electronic Structure and LaserFoundation for Research and Technology‐HellasHeraklion700 13Greece
| | - D. Katerinopoulou
- Institute of Electronic Structure and LaserFoundation for Research and Technology‐HellasHeraklion700 13Greece
- Department of PhysicsUniversity of CreteHeraklion710 03Greece
| | - L. Sygellou
- Institute of Chemical Engineering Sciences (ICE‐HT)Foundation of Research and TechnologyHellas, P.O. Box 1414Rio Patras26504Greece
| | - G. Deligeorgis
- Institute of Electronic Structure and LaserFoundation for Research and Technology‐HellasHeraklion700 13Greece
| | - Vassilios Binas
- Institute of Electronic Structure and LaserFoundation for Research and Technology‐HellasHeraklion700 13Greece
- Department of PhysicsUniversity of CreteHeraklion710 03Greece
| | - Ilias M. Oikonomou
- Department of PhysicsAristotle University of ThessalonikiThessaloniki54124Greece
| | - Philomela Komninou
- Department of PhysicsAristotle University of ThessalonikiThessaloniki54124Greece
| | - G. Kiriakidis
- Institute of Electronic Structure and LaserFoundation for Research and Technology‐HellasHeraklion700 13Greece
| | - G. Kioseoglou
- Institute of Electronic Structure and LaserFoundation for Research and Technology‐HellasHeraklion700 13Greece
- Department of Materials Science and TechnologyUniversity of CreteHeraklion710 03Greece
| | - E. Stratakis
- Institute of Electronic Structure and LaserFoundation for Research and Technology‐HellasHeraklion700 13Greece
- Department of PhysicsUniversity of CreteHeraklion710 03Greece
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12
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Li Y, Yin S, Du Y, Zhang H, Chen J, Wang Z, Wang S, Qin Q, Zhou M, Li L. Liquid-metal based flexible a-IZTO ultrathin films for electrical and optical applications. NANOSCALE 2022; 14:16797-16805. [PMID: 36346285 DOI: 10.1039/d2nr04535d] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/16/2023]
Abstract
Amorphous indium zinc tin oxide (a-IZTO) is a kind of transparent conductive oxide (TCO), which can be used in transparent electrodes, transistors, and flexible devices. At present, a key limitation of a-IZTO is the costly vacuum manufacturing technology, and its commercial production is also restricted by the complex raw material preparation process. In this article, we report a liquid metal-based van der Waals (vdW) exfoliation technique by which a-IZTO films with several nanometres thickness are fabricated. The a-IZTO films fabricated in ambient air have a size on the centimeter scale and an optical transmittance of 99.64%; they are also large-area flexible oxide films. In order to illustrate the capabilities of this technology, we fabricated thin film transistors (TFTs) and photodetectors based on a-IZTO films. An a-IZTO thin film transistor (TFT) has an on/off ratio of 106. When the Vds is 5 V, the responsivity, detectivity and external quantum efficiency of an a-IZTO photodetector are 7.57 × 104 A W-1, 4.00 × 1015 Jones and 3.68 × 105%, respectively, exhibiting one of the top performances in this field.
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Affiliation(s)
- Ying Li
- Institutes of Physical Science and Information Technology, Anhui University, Hefei 230601, P.R. China.
| | - Shiqi Yin
- Institutes of Physical Science and Information Technology, Anhui University, Hefei 230601, P.R. China.
| | - Yuchen Du
- Institutes of Physical Science and Information Technology, Anhui University, Hefei 230601, P.R. China.
| | - Hui Zhang
- Institutes of Physical Science and Information Technology, Anhui University, Hefei 230601, P.R. China.
| | - Jiawang Chen
- Key Laboratory of Materials Physics, Anhui Key Laboratory of Nanomaterials and Nanotechnology, Institute of Solid State Physics, Hefei Institutes of Physical Science, Chinese Academy of Sciences, Hefei 230031, P.R. China
| | - Zihan Wang
- Institutes of Physical Science and Information Technology, Anhui University, Hefei 230601, P.R. China.
| | - Shaotian Wang
- Institutes of Physical Science and Information Technology, Anhui University, Hefei 230601, P.R. China.
| | - Qinggang Qin
- Institutes of Physical Science and Information Technology, Anhui University, Hefei 230601, P.R. China.
| | - Min Zhou
- College of Physical Science and Technology, Yangzhou University, Yangzhou 225002, P. R. China
| | - Liang Li
- Institutes of Physical Science and Information Technology, Anhui University, Hefei 230601, P.R. China.
- Key Laboratory of Materials Physics, Anhui Key Laboratory of Nanomaterials and Nanotechnology, Institute of Solid State Physics, Hefei Institutes of Physical Science, Chinese Academy of Sciences, Hefei 230031, P.R. China
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13
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Xiong Y, Xu D, Feng Y, Zhang G, Lin P, Chen X. P-Type 2D Semiconductors for Future Electronics. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2022:e2206939. [PMID: 36245325 DOI: 10.1002/adma.202206939] [Citation(s) in RCA: 6] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/30/2022] [Revised: 09/30/2022] [Indexed: 06/16/2023]
Abstract
2D semiconductors represent one of the best candidates to extend Moore's law for their superiorities, such as keeping high carrier mobility and remarkable gate-control capability at atomic thickness. Complementary transistors and van der Waals junctions are critical in realizing 2D semiconductors-based integrated circuits suitable for future electronics. N-type 2D semiconductors have been reported predominantly for the strong electron doping caused by interfacial charge impurities and internal structural defects. By contrast, superior and reliable p-type 2D semiconductors with holes as majority carriers are still scarce. Not only that, but some critical issues have not been adequately addressed, including their controlled synthesis in wafer size and high quality, defect and carrier modulation, optimization of interface and contact, and application in high-speed and low-power integrated devices. Here the material toolkit, synthesis strategies, device basics, and digital electronics closely related to p-type 2D semiconductors are reviewed. Their opportunities, challenges, and prospects for future electronic applications are also discussed, which would be promising or even shining in the post-Moore era.
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Affiliation(s)
- Yunhai Xiong
- MIIT Key Laboratory of Advanced Display Materials and Devices, School of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing, 210094, China
| | - Duo Xu
- MIIT Key Laboratory of Advanced Display Materials and Devices, School of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing, 210094, China
| | - Yiping Feng
- MIIT Key Laboratory of Advanced Display Materials and Devices, School of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing, 210094, China
| | - Guangjie Zhang
- CAS Key Laboratory of Standardization and Measurement for Nanotechnology, CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology, Beijing, 100190, China
| | - Pei Lin
- Key Laboratory of Materials Physics of Ministry of Education, School of Physics and Microelectronics, Zhengzhou University, Zhengzhou, 450001, China
| | - Xiang Chen
- MIIT Key Laboratory of Advanced Display Materials and Devices, School of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing, 210094, China
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14
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Li X, Ruan S, Zhu H. SnS Nanoflakes/Graphene Hybrid: Towards Broadband Spectral Response and Fast Photoresponse. NANOMATERIALS (BASEL, SWITZERLAND) 2022; 12:2777. [PMID: 36014642 PMCID: PMC9413584 DOI: 10.3390/nano12162777] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 07/14/2022] [Revised: 08/04/2022] [Accepted: 08/11/2022] [Indexed: 06/15/2023]
Abstract
High responsivity has been recently achieved in a graphene-based hybrid photogating mechanism photodetector using two-dimensional (2D) semiconductor nanosheets or quantum dots (QDs) sensitizers. However, there is a major challenge of obtaining photodetectors of fast photoresponse time and broad spectral photoresponse at room temperature due to the high trap density generated at the interface of nanostructure/graphene or the large band gap of QDs. The van der Waals interfacial coupling in small bandgap 2D/graphene heterostructures has enabled broadband photodetection. However, most of the photocarriers in the hybrid structure originate from the photoconductive effect, and it is still a challenge to achieve fast photodetection. Here, we directly grow SnS nanoflakes on graphene by the physical vapor deposition (PVD) method, which can avoid contamination between SnS absorbing layer and graphene and also ensures the high quality and low trap density of SnS. The results demonstrate the extended broad-spectrum photoresponse of the photodetector over a wide spectral range from 375 nm to 1550 nm. The broadband photodetecting mechanisms based on a photogating effect induced by the transferring of photo-induced carrier and photo-hot carrier are discussed in detail. More interestingly, the device also exhibits a large photoresponsivity of 41.3 AW-1 and a fast response time of around 19 ms at 1550 nm. This study reveals strategies for broadband response and sensitive photodetectors with SnS nanoflakes/graphene.
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Affiliation(s)
- Xiangyang Li
- College of Applied Technology, Shenzhen University, Shenzhen 518060, China
| | - Shuangchen Ruan
- College of New Energy and New Materials, Shenzhen Technology University, Shenzhen 518118, China
| | - Haiou Zhu
- College of New Energy and New Materials, Shenzhen Technology University, Shenzhen 518118, China
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15
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Guo X, Wang Y, Elbourne A, Mazumder A, Nguyen CK, Krishnamurthi V, Yu J, Sherrell PC, Daeneke T, Walia S, Li Y, Zavabeti A. Doped 2D SnS materials derived from liquid metal-solution for tunable optoelectronic devices. NANOSCALE 2022; 14:6802-6810. [PMID: 35471407 DOI: 10.1039/d2nr01135b] [Citation(s) in RCA: 6] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
Gas-liquid reaction phenomena on liquid-metal solvents can be used to form intriguing 2D materials with large lateral dimensions, where the free energies of formation determine the final product. A vast selection of elements can be incorporated into the liquid metal-based nanostructures, offering a versatile platform for fabricating novel optoelectronic devices. While conventional doping techniques of semiconductors present several challenges for 2D materials. Liquid metals provide a facile route for obtaining doped 2D semiconductors. In this work, we successfully demonstrate that the doping of 2D SnS can be realized in a glove box containing a diluted H2S gas. Low melting point elements such as Bi and In are alloyed with base liquid Sn in varying concentrations, resulting in the doping of 2D SnS layers incorporating Bi and In sulphides. Optoelectronic properties for photodetectors and piezoelectronics can be fine-tuned through the controlled introduction of selective migration doping. The structural modification of 2D SnS results in a 22.6% enhancement of the d11 piezoelectric coefficient. In addition, photodetector response times have increased by several orders of magnitude. Doping methods using liquid metals have significantly changed the photodiode and piezoelectric device performances, providing a powerful approach to tune optoelectronic device outputs.
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Affiliation(s)
- Xiangyang Guo
- School of Engineering, RMIT University, Melbourne, VIC, 3000, Australia.
| | - Yichao Wang
- School of Engineering, RMIT University, Melbourne, VIC, 3000, Australia.
- School of Life and Environmental Sciences, Deakin University, Geelong, Victoria, 3216, Australia
| | - Aaron Elbourne
- School of Engineering, RMIT University, Melbourne, VIC, 3000, Australia.
| | - Aishani Mazumder
- School of Engineering, RMIT University, Melbourne, VIC, 3000, Australia.
| | - Chung Kim Nguyen
- School of Engineering, RMIT University, Melbourne, VIC, 3000, Australia.
| | | | - Jerry Yu
- School of Engineering, RMIT University, Melbourne, VIC, 3000, Australia.
| | - Peter C Sherrell
- Department of Chemical Engineering, The University of Melbourne, Parkville, Victoria 3010, Australia.
| | - Torben Daeneke
- School of Engineering, RMIT University, Melbourne, VIC, 3000, Australia.
| | - Sumeet Walia
- School of Engineering, RMIT University, Melbourne, VIC, 3000, Australia.
| | - Yongxiang Li
- School of Engineering, RMIT University, Melbourne, VIC, 3000, Australia.
| | - Ali Zavabeti
- School of Engineering, RMIT University, Melbourne, VIC, 3000, Australia.
- Department of Chemical Engineering, The University of Melbourne, Parkville, Victoria 3010, Australia.
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16
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Luan Y, Zobeiri H, Wang X, Sutter E, Sutter P, Fei Z. Imaging Anisotropic Waveguide Exciton Polaritons in Tin Sulfide. NANO LETTERS 2022; 22:1497-1503. [PMID: 35133843 DOI: 10.1021/acs.nanolett.1c03833] [Citation(s) in RCA: 5] [Impact Index Per Article: 2.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
In recent years, novel materials supporting in-plane anisotropic polaritons have attracted a great deal of research interest due to their capability of shaping nanoscale field distributions and controlling nanophotonic energy flows. Here we report a nano-optical imaging study of waveguide exciton polaritons (EPs) in tin sulfide (SnS) in the near-infrared (near-IR) region using scattering-type scanning near-field optical microscopy (s-SNOM). With s-SNOM, we mapped in real space the propagative EPs in SnS, which show sensitive dependence on the excitation energy and sample thickness. Moreover, we found that both the polariton wavelength and propagation length are anisotropic in the sample plane. In particular, in a narrow spectral range from 1.32 to 1.44 eV, the EPs demonstrate quasi-one-dimensional propagation, which is rarely seen in natural polaritonic materials. A further analysis indicates that the observed polariton anisotropy originates from the different optical band gaps and exciton binding energies along the two principal crystal axes of SnS.
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Affiliation(s)
- Yilong Luan
- Department of Physics and Astronomy, Iowa State University, Ames, Iowa 50011, United States
- Ames Laboratory, U.S. Department of Energy, Iowa State University, Ames, Iowa 50011, United States
| | - Hamidreza Zobeiri
- Department of Mechanical Engineering, Iowa State University, Ames, Iowa 50011, United States
| | - Xinwei Wang
- Department of Mechanical Engineering, Iowa State University, Ames, Iowa 50011, United States
| | - Eli Sutter
- Department of Mechanical and Materials Engineering, University of Nebraska-Lincoln, Lincoln, Nebraska 68588, United States
- Nebraska Center for Materials and Nanoscience, University of Nebraska-Lincoln, Lincoln, Nebraska 68588, United States
| | - Peter Sutter
- Department of Electrical and Computer Engineering, University of Nebraska-Lincoln, Lincoln, Nebraska 68588, United States
| | - Zhe Fei
- Department of Physics and Astronomy, Iowa State University, Ames, Iowa 50011, United States
- Ames Laboratory, U.S. Department of Energy, Iowa State University, Ames, Iowa 50011, United States
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17
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Pham PV, Bodepudi SC, Shehzad K, Liu Y, Xu Y, Yu B, Duan X. 2D Heterostructures for Ubiquitous Electronics and Optoelectronics: Principles, Opportunities, and Challenges. Chem Rev 2022; 122:6514-6613. [PMID: 35133801 DOI: 10.1021/acs.chemrev.1c00735] [Citation(s) in RCA: 82] [Impact Index Per Article: 41.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 02/07/2023]
Abstract
A grand family of two-dimensional (2D) materials and their heterostructures have been discovered through the extensive experimental and theoretical efforts of chemists, material scientists, physicists, and technologists. These pioneering works contribute to realizing the fundamental platforms to explore and analyze new physical/chemical properties and technological phenomena at the micro-nano-pico scales. Engineering 2D van der Waals (vdW) materials and their heterostructures via chemical and physical methods with a suitable choice of stacking order, thickness, and interlayer interactions enable exotic carrier dynamics, showing potential in high-frequency electronics, broadband optoelectronics, low-power neuromorphic computing, and ubiquitous electronics. This comprehensive review addresses recent advances in terms of representative 2D materials, the general fabrication methods, and characterization techniques and the vital role of the physical parameters affecting the quality of 2D heterostructures. The main emphasis is on 2D heterostructures and 3D-bulk (3D) hybrid systems exhibiting intrinsic quantum mechanical responses in the optical, valley, and topological states. Finally, we discuss the universality of 2D heterostructures with representative applications and trends for future electronics and optoelectronics (FEO) under the challenges and opportunities from physical, nanotechnological, and material synthesis perspectives.
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Affiliation(s)
- Phuong V Pham
- School of Micro-Nano Electronics, Hangzhou Global Scientific and Technological Innovation Center (HIC), Zhejiang University, Xiaoshan 311200, China.,State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027, China.,ZJU-UIUC Joint Institute, Zhejiang University, Jiaxing 314400, China
| | - Srikrishna Chanakya Bodepudi
- School of Micro-Nano Electronics, Hangzhou Global Scientific and Technological Innovation Center (HIC), Zhejiang University, Xiaoshan 311200, China.,State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027, China.,ZJU-UIUC Joint Institute, Zhejiang University, Jiaxing 314400, China
| | - Khurram Shehzad
- School of Micro-Nano Electronics, Hangzhou Global Scientific and Technological Innovation Center (HIC), Zhejiang University, Xiaoshan 311200, China.,State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027, China.,ZJU-UIUC Joint Institute, Zhejiang University, Jiaxing 314400, China
| | - Yuan Liu
- School of Physics and Electronics, Hunan University, Hunan 410082, China
| | - Yang Xu
- School of Micro-Nano Electronics, Hangzhou Global Scientific and Technological Innovation Center (HIC), Zhejiang University, Xiaoshan 311200, China.,State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027, China.,ZJU-UIUC Joint Institute, Zhejiang University, Jiaxing 314400, China
| | - Bin Yu
- School of Micro-Nano Electronics, Hangzhou Global Scientific and Technological Innovation Center (HIC), Zhejiang University, Xiaoshan 311200, China.,State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027, China.,ZJU-UIUC Joint Institute, Zhejiang University, Jiaxing 314400, China
| | - Xiangfeng Duan
- Department of Chemistry and Biochemistry, University of California, Los Angeles (UCLA), Los Angeles, California 90095-1569, United States
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18
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Yao J, Yang G. 2D Layered Material Alloys: Synthesis and Application in Electronic and Optoelectronic Devices. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2022; 9:e2103036. [PMID: 34719873 PMCID: PMC8728821 DOI: 10.1002/advs.202103036] [Citation(s) in RCA: 2] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/15/2021] [Revised: 09/01/2021] [Indexed: 05/12/2023]
Abstract
2D layered materials (2DLMs) have come under the limelight of scientific and engineering research and broke new ground across a broad range of disciplines in the past decade. Nevertheless, the members of stoichiometric 2DLMs are relatively limited. This renders them incompetent to fulfill the multitudinous scenarios across the breadth of electronic and optoelectronic applications since the characteristics exhibited by a specific material are relatively monotonous and limited. Inspiringly, alloying of 2DLMs can markedly broaden the 2D family through composition modulation and it has ushered a whole new research domain: 2DLM alloy nano-electronics and nano-optoelectronics. This review begins with a comprehensive survey on synthetic technologies for the production of 2DLM alloys, which include chemical vapor transport, chemical vapor deposition, pulsed-laser deposition, and molecular beam epitaxy, spanning their development, as well as, advantages and disadvantages. Then, the up-to-date advances of 2DLM alloys in electronic devices are summarized. Subsequently, the up-to-date advances of 2DLM alloys in optoelectronic devices are summarized. In the end, the ongoing challenges of this emerging field are highlighted and the future opportunities are envisioned, which aim to navigate the coming exploration and fully exert the pivotal role of 2DLMs toward the next generation of electronic and optoelectronic devices.
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Affiliation(s)
- Jiandong Yao
- State Key Laboratory of Optoelectronic Materials and Technologies, Nanotechnology Research Center, School of Materials Science & Engineering, Sun Yat-sen University, Guangzhou, Guangdong, 510275, P. R. China
| | - Guowei Yang
- State Key Laboratory of Optoelectronic Materials and Technologies, Nanotechnology Research Center, School of Materials Science & Engineering, Sun Yat-sen University, Guangzhou, Guangdong, 510275, P. R. China
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19
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Zi Y, Zhu J, Hu L, Wang M, Huang W. Nanoengineering of Tin Monosulfide (SnS)‐Based Structures for Emerging Applications. SMALL SCIENCE 2021. [DOI: 10.1002/smsc.202100098] [Citation(s) in RCA: 8] [Impact Index Per Article: 2.7] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/15/2022] Open
Affiliation(s)
- You Zi
- School of Chemistry and Chemical Engineering Nantong University Nantong Jiangsu 226019 P. R. China
| | - Jun Zhu
- School of Chemistry and Chemical Engineering Nantong University Nantong Jiangsu 226019 P. R. China
| | - Lanping Hu
- School of Chemistry and Chemical Engineering Nantong University Nantong Jiangsu 226019 P. R. China
| | - Mengke Wang
- School of Chemistry and Chemical Engineering Nantong University Nantong Jiangsu 226019 P. R. China
| | - Weichun Huang
- School of Chemistry and Chemical Engineering Nantong University Nantong Jiangsu 226019 P. R. China
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20
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Wang Y, Mayyas M, Yang J, Ghasemian MB, Tang J, Mousavi M, Han J, Ahmed M, Baharfar M, Mao G, Yao Y, Esrafilzadeh D, Cortie D, Kalantar-Zadeh K. Liquid-Metal-Assisted Deposition and Patterning of Molybdenum Dioxide at Low Temperature. ACS APPLIED MATERIALS & INTERFACES 2021; 13:53181-53193. [PMID: 34723471 DOI: 10.1021/acsami.1c15367] [Citation(s) in RCA: 6] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
Molybdenum dioxide (MoO2), considering its near-metallic conductivity and surface plasmonic properties, is a great material for electronics, energy storage devices and biosensing. Yet to this day, room-temperature synthesis of large area MoO2, which allows deposition on arbitrary substrates, has remained a challenge. Due to their reactive interfaces and specific solubility conditions, gallium-based liquid metal alloys offer unique opportunities for synthesizing materials that can meet these challenges. Herein, a substrate-independent liquid metal-based method for the room temperature deposition and patterning of MoO2 is presented. By introducing a molybdate precursor to the surrounding of a eutectic gallium-indium alloy droplet, a uniform layer of hydrated molybdenum oxide (H2MoO3) is formed at the interface. This layer is then exfoliated and transferred onto a desired substrate. Utilizing the transferred H2MoO3 layer, a laser-writing technique is developed which selectively transforms this H2MoO3 into crystalline MoO2 and produces electrically conductive MoO2 patterns at room temperature. The electrical conductivity and plasmonic properties of the MoO2 are analyzed and demonstrated. The presented metal oxide room-temperature deposition and patterning method can find many applications in optoelectronics, sensing, and energy industries.
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Affiliation(s)
- Yifang Wang
- School of Chemical Engineering, University of New South Wales (UNSW), Sydney Campus, Sydney, New South Wales 2052, Australia
| | - Mohannad Mayyas
- School of Chemical Engineering, University of New South Wales (UNSW), Sydney Campus, Sydney, New South Wales 2052, Australia
| | - Jiong Yang
- School of Chemical Engineering, University of New South Wales (UNSW), Sydney Campus, Sydney, New South Wales 2052, Australia
| | - Mohammad B Ghasemian
- School of Chemical Engineering, University of New South Wales (UNSW), Sydney Campus, Sydney, New South Wales 2052, Australia
| | - Jianbo Tang
- School of Chemical Engineering, University of New South Wales (UNSW), Sydney Campus, Sydney, New South Wales 2052, Australia
| | - Maedehsadat Mousavi
- School of Chemical Engineering, University of New South Wales (UNSW), Sydney Campus, Sydney, New South Wales 2052, Australia
| | - Jialuo Han
- School of Chemical Engineering, University of New South Wales (UNSW), Sydney Campus, Sydney, New South Wales 2052, Australia
| | - Mostak Ahmed
- School of Chemical Engineering, University of New South Wales (UNSW), Sydney Campus, Sydney, New South Wales 2052, Australia
| | - Mahroo Baharfar
- School of Chemical Engineering, University of New South Wales (UNSW), Sydney Campus, Sydney, New South Wales 2052, Australia
| | - Guangzhao Mao
- School of Chemical Engineering, University of New South Wales (UNSW), Sydney Campus, Sydney, New South Wales 2052, Australia
| | - Yin Yao
- Electron Microscope Unit, University of New South Wales (UNSW), Sydney Campus, Sydney, New South Wales 2052, Australia
| | - Dorna Esrafilzadeh
- Graduate School of Biomedical Engineering, University of New South Wales (UNSW), Sydney Campus, Sydney, New South Wales 2052, Australia
| | - David Cortie
- Australian Institute for Innovative Materials, Institute for Superconducting and Electronic Materials, University of Wollongong, Innovation Campus Squires Way, North Wollongong, New South Wales 2522, Australia
| | - Kourosh Kalantar-Zadeh
- School of Chemical Engineering, University of New South Wales (UNSW), Sydney Campus, Sydney, New South Wales 2052, Australia
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21
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Huang CH, Tang Y, Yang TY, Chueh YL, Nomura K. Atomically Thin Tin Monoxide-Based p-Channel Thin-Film Transistor and a Low-Power Complementary Inverter. ACS APPLIED MATERIALS & INTERFACES 2021; 13:52783-52792. [PMID: 34719921 DOI: 10.1021/acsami.1c15990] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
Atomically thin oxide semiconductors are significantly expected for next-generation cost-effective, energy-efficient electronics. A high-performance p-channel oxide thin-film transistor (TFT) was developed using an atomically thin p-type tin monoxide, SnO channel with a thickness of ∼1 nm, which was grown by a vacuum-free, solvent-free, metal-liquid printing process at low temperatures, as low as 250 °C in an ambient atmosphere. By performing oxygen-vacancy defect termination for the bulk-channel and back-channel surface of the ultrathin SnO channel, the presented p-channel SnO TFT exhibited good device performances with a reasonable TFT mobility of ∼0.47 cm2 V-1 s-1, a high on/off current ratio of ∼106, low off current of <10-12 A, and a subthreshold swing of ∼2.5 V decade-1, which was improved compared with the conventional p-channel SnO TFTs. We also fabricated metal-liquid printing-based n-channel oxide TFTs such as n-channel SnO2 and In2O3-TFTs and developed ultrathin-channel oxide-TFT-based low-power complementary inverter circuits with the developed p-channel SnO TFTs. The full swing of voltage-transfer characteristics with a voltage gain of ∼10 and a power dissipation of <4 nW for p-SnO/n-SnO2 and ∼120 and <2 nW for p-SnO/n-In2O3-CMOS inverters were successfully demonstrated.
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Affiliation(s)
- Chi-Hsin Huang
- Department of Electrical and Computer Engineering, University of California San Diego, 9500 German Drive, La Jolla, California 92093, United States
| | - Yalun Tang
- Department of Electrical and Computer Engineering, University of California San Diego, 9500 German Drive, La Jolla, California 92093, United States
| | - Tzu-Yi Yang
- Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu 30013, Taiwan
| | - Yu-Lun Chueh
- Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu 30013, Taiwan
| | - Kenji Nomura
- Department of Electrical and Computer Engineering, University of California San Diego, 9500 German Drive, La Jolla, California 92093, United States
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22
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Yan W, Johnson BC, Balendhran S, Cadusch J, Yan D, Michel JI, Wang S, Zheng T, Crozier K, Bullock J. Visible to Short-Wave Infrared Photodetectors Based on ZrGeTe 4 van der Waals Materials. ACS APPLIED MATERIALS & INTERFACES 2021; 13:45881-45889. [PMID: 34523918 DOI: 10.1021/acsami.1c12564] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
The self-terminated, layered structure of van der Waals materials introduces fundamental advantages for infrared (IR) optoelectronic devices. These are mainly associated with the potential for low noise while maintaining high internal quantum efficiency when reducing IR absorber thicknesses. In this study, we introduce a new van der Waals material candidate, zirconium germanium telluride (ZrGeTe4), to a growing family of promising IR van der Waals materials. We find the bulk form ZrGeTe4 has an indirect band edge around ∼0.5 eV, in close agreement with previous theoretical predictions. This material is found to be stable up to 140 °C and shows minimal compositional variation even after >30 days storage in humid air. We demonstrate simple proof-of-concept broad spectrum photodetectors with responsivities above 0.1 AW-1 across both the visible and short-wave infrared wavelengths. This corresponds to a specific detectivity of ∼109 cm Hz1/2 W-1 at λ = 1.4 μm at room temperature. These devices show a linear photoresponse vs illumination intensity relationship over ∼4 orders of magnitude, and fast rise/fall times of ∼50 ns, also verified by a 3 dB roll-off frequency of 5.9 MHz. As the first demonstration of photodetection using ZrGeTe4, these characteristics measured on a simple proof-of-concept device show the exciting potential of the ZrGeTe4 for room temperature IR optoelectronic applications.
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Affiliation(s)
- Wei Yan
- Department of Electrical and Electronic Engineering, University of Melbourne, Parkville, Victoria 3010, Australia
| | - Brett C Johnson
- School of Physics, University of Melbourne, Parkville, Victoria 3010, Australia
- School of Engineering, RMIT University, Melbourne, Victoria 3001, Australia
| | | | - Jasper Cadusch
- Department of Electrical and Electronic Engineering, University of Melbourne, Parkville, Victoria 3010, Australia
| | - Di Yan
- Department of Electrical and Electronic Engineering, University of Melbourne, Parkville, Victoria 3010, Australia
| | - Jesús Ibarra Michel
- Department of Electrical and Electronic Engineering, University of Melbourne, Parkville, Victoria 3010, Australia
| | - Shifan Wang
- Department of Electrical and Electronic Engineering, University of Melbourne, Parkville, Victoria 3010, Australia
| | - Tian Zheng
- Materials Characterisation and Fabrication Platform (MCFP), Department of Chemical Engineering, University of Melbourne, Parkville, Victoria 3010, Australia
| | - Kenneth Crozier
- Department of Electrical and Electronic Engineering, University of Melbourne, Parkville, Victoria 3010, Australia
- School of Physics, University of Melbourne, Parkville, Victoria 3010, Australia
- Australian Research Council (ARC) Centre of Excellence for Transformative Meta-Optical Systems (TMOS), University of Melbourne, Parkville, Victoria 3010, Australia
| | - James Bullock
- Department of Electrical and Electronic Engineering, University of Melbourne, Parkville, Victoria 3010, Australia
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23
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Chen Y, Zhang M. Large-area growth of SnS 2 nanosheets by chemical vapor deposition for high-performance photodetectors. RSC Adv 2021; 11:29960-29964. [PMID: 35480265 PMCID: PMC9040918 DOI: 10.1039/d1ra05779k] [Citation(s) in RCA: 4] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 07/29/2021] [Accepted: 08/30/2021] [Indexed: 11/21/2022] Open
Abstract
Two-dimensional tin disulfide (SnS2) is very popular in electronic, optoelectronic, energy storage, and conversion applications. However, the uncontrollable large-area growth of SnS2 nanosheets and unsatisfactory performance of the photodetectors based on SnS2 have hindered its applications. Here, we propose a chemical vapor deposition (CVD) method using SnCl2 as a precursor to grow SnS2 nanosheets. We found that the as-grown SnS2 nanosheets were high-quality crystal structures. Then, photodetectors based on the as-grown SnS2 were fabricated and, exhibited a high responsivity (1400 A W-1), fast response rate (a response time of 7 ms and a recovery time of 6 ms), perfect external quantum efficiency (EQE) (2.6 × 105%), and remarkable detectivity (D*) (3.1 × 1013 Jones). Our work provides a new CVD method to grow high-quality SnS2 nanosheets.
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Affiliation(s)
- Ying Chen
- Hubei Engineering Technology Research Center of Energy Photoelectric Device and System, Hubei University of Technology Wuhan 430068 China .,School of Science, Hubei University of Technology Wuhan 430068 China
| | - Man Zhang
- School of Electrical and Electronic Engineering, Hubei University of Technology Wuhan 430068 China
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24
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Cong H, Chu X, Wan F, Chu Z, Wang X, Ma Y, Jiang J, Shen L, You J, Xue C. Broadband Photodetector Based on Inorganic Perovskite CsPbBr 3 /GeSn Heterojunction. SMALL METHODS 2021; 5:e2100517. [PMID: 34927872 DOI: 10.1002/smtd.202100517] [Citation(s) in RCA: 11] [Impact Index Per Article: 3.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/13/2021] [Revised: 06/04/2021] [Indexed: 06/14/2023]
Abstract
Photodetectors with broadband response spectrum have attracted great interest in many application areas such as imaging, gas sensing, and night vision. Here, a high performance broadband photodetector is demonstrated with inorganic perovskite CsPbBr3 /GeSn heterojunction, detection range can be covered from 450 to 2200 nm. The responsivity of heterojunction device can achieve as high as 129 mA W-1 under illuminated light of 532 nm, which is 4.92 times larger than that of a GeSn based device. As the CsPbBr3 can also act as anti-reflective coating for infrared wavelength, the infrared band responsivity at wavelength of 2200 nm can also be raised by 1.42 times. In addition, the device with all inorganic components is showed good stability, while keeping in the dry environment, the device can sustain its 90% original after 550 h storage. These results show the inorganic perovskite/GeSn heterojunction device is of great potential in broadband photodetection with high responsivity.
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Affiliation(s)
- Hui Cong
- State Key Laboratory for Supperlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Science, Beijing, 100083, P. R. China
| | - Xinbo Chu
- Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Science, Beijing, 100083, P. R. China
| | - Fengshuo Wan
- State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Science, Beijing, 100083, P. R. China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, P. R. China
| | - Zema Chu
- Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Science, Beijing, 100083, P. R. China
| | - Xiaoyu Wang
- State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Science, Beijing, 100083, P. R. China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, P. R. China
| | - Yao Ma
- State Key Laboratory of Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun, 130012, P. R. China
| | - Jizhong Jiang
- State Key Laboratory of Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun, 130012, P. R. China
| | - Liang Shen
- State Key Laboratory of Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun, 130012, P. R. China
| | - Jingbi You
- Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Science, Beijing, 100083, P. R. China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, P. R. China
| | - Chunlai Xue
- State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Science, Beijing, 100083, P. R. China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, P. R. China
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25
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Sarkar AS, Stratakis E. Dispersion behaviour of two dimensional monochalcogenides. J Colloid Interface Sci 2021; 594:334-341. [PMID: 33773385 DOI: 10.1016/j.jcis.2021.02.081] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 11/21/2020] [Revised: 02/03/2021] [Accepted: 02/18/2021] [Indexed: 11/15/2022]
Abstract
Solution processable two-dimensional (2D) materials have provided an ideal platform for both fundamental studies and wearable electronic applications. Apart from graphene and 2D dichalcogenides, IVA-VI metal monochalcogenides (MMCs) has emerged recently as a promising candidate for next generation electronic applications. However, the dispersion behavior, which is crucial for the quality, solubility and stability of MMCs, has been quite unexplored. Here, the exfoliation and the dispersion behavior of Germanium (II) monosulfide (GeS) and Tin (II) monosulfide (SnS) nanosheets has been investigated in a wide range of organic solvents. Nine different organic solvents were examined and analyzed, considering the solvent polarity, surface tension, and Hansen solubility parameters. A significant yield of isolated GeS and SnS flakes, namely ~16.4 and ~23.08 μg/ml in 2-propanol and N-Methyl-2-pyrrolidone respectively were attained. The isolated flakes are few-layers nanosheets with lateral sizes over a few hundreds of nanometers. The MMC colloids exhibit long-term stability, suggesting the MMCs applicability for scalable solution processable printed electronic device applications.
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Affiliation(s)
- Abdus Salam Sarkar
- Institute of Electronic Structure and Laser, Foundation for Research and Technology-Hellas, Heraklion, 700 13 Crete, Greece.
| | - Emmanuel Stratakis
- Institute of Electronic Structure and Laser, Foundation for Research and Technology-Hellas, Heraklion, 700 13 Crete, Greece; Physics Department, University of Crete, Heraklion, 710 03 Crete, Greece.
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26
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Zhao H, Yan Y, Song X, Ma Z, Tian T, Jiang Y, Li X, Xia C, Li J. Few-layer In 4/3P 2Se 6 nanoflakes for high detectivity photodetectors. NANOSCALE 2021; 13:3757-3766. [PMID: 33555284 DOI: 10.1039/d0nr07987a] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
Metal phosphorus trichalcogenides (MPX3) have attracted extensive attention as promising two-dimensional (2D) layered materials in future electronic and optoelectronic devices. Here, for the first time, few-layer In4/3P2Se6 nanoflakes have been successfully exfoliated from home-made high-quality single crystals. The In4/3P2Se6 crystal belongs to the R3 space group, and possesses a weak van der Waals force between the adjacent layers and a direct bandgap of 1.99 eV. Furthermore, the In4/3P2Se6-based photodetectors show high performances in the visible light region, such as a high responsivity (R) of 4.93 A·W-1, a high external quantum efficiency (EQE) of 1509% and a fast response time, as low as 2.1 ms. In particular, the high detectivity (D) of the devices can reach up to 4.3 × 1013 Jones (light ON/OFF ratio ≈104) under illumination from a 405 nm light at a bias voltage of 1 V, which is favoured by the ultralow dark current (∼100 fA). These excellent performances pave the way for the implementation of In4/3P2Se6 nanoflakes as promising candidates for future optoelectronic detection applications.
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Affiliation(s)
- Hongxiao Zhao
- School of Physics, Henan Key Laboratory of Photovoltaic Materials, Henan Normal University, Henan 453007, China.
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27
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Schankler AM, Gao L, Rappe AM. Large Bulk Piezophotovoltaic Effect of Monolayer 2 H-MoS 2. J Phys Chem Lett 2021; 12:1244-1249. [PMID: 33497221 DOI: 10.1021/acs.jpclett.0c03503] [Citation(s) in RCA: 12] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
The bulk photovoltaic effect in noncentrosymmetric materials is an intriguing physical phenomenon that holds potential for high-efficiency energy harvesting. Here, we study the shift current bulk photovoltaic effect in the transition-metal dichalcogenide MoS2. We present a simple automated method to guide materials design and use it to uncover a distortion to monolayer 2H-MoS2 that dramatically enhances the integrated shift current. Using this distortion, we show that overlap in the Brillouin zone of the distributions of the shift vector (a quantity measuring the net displacement in real space of coherent wave packets during excitation) and the transition intensity is crucial for increasing the shift current. The distortion pattern is related to the material polarization and can be realized through an applied electric field via the converse piezoelectric effect. This finding suggests an additional method for engineering the shift current response of materials to augment previously reported methods using mechanical strain.
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Affiliation(s)
- Aaron M Schankler
- Department of Chemistry, University of Pennsylvania, Philadelphia, Pennsylvania 19104-6323, United States
| | - Lingyuan Gao
- Department of Chemistry, University of Pennsylvania, Philadelphia, Pennsylvania 19104-6323, United States
| | - Andrew M Rappe
- Department of Chemistry, University of Pennsylvania, Philadelphia, Pennsylvania 19104-6323, United States
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28
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Zhang K, Zhang L, Han L, Wang L, Chen Z, Xing H, Chen X. Recent progress and challenges based on two-dimensional material photodetectors. NANO EXPRESS 2021. [DOI: 10.1088/2632-959x/abd45b] [Citation(s) in RCA: 17] [Impact Index Per Article: 5.7] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/12/2022]
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29
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Li X, Song Z, Zhao H, Zhang W, Sun Z, Liang H, Zhu H, Pei J, Li L, Ruan S. SnSe Nanosheets: From Facile Synthesis to Applications in Broadband Photodetections. NANOMATERIALS 2020; 11:nano11010049. [PMID: 33375522 PMCID: PMC7824353 DOI: 10.3390/nano11010049] [Citation(s) in RCA: 4] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 12/07/2020] [Revised: 12/22/2020] [Accepted: 12/24/2020] [Indexed: 02/05/2023]
Abstract
In recent years, using two-dimensional (2D) materials to realize broadband photodetection has become a promising area in optoelectronic devices. Here, we successfully synthesized SnSe nanosheets (NSs) by a facile tip ultra-sonication method in water-ethanol solvent which was eco-friendly. The carrier dynamics of SnSe NSs was systematically investigated via a femtosecond transient absorption spectroscopy in the visible wavelength regime and three decay components were clarified with delay time of τ1 = 0.77 ps, τ2 = 8.3 ps, and τ3 = 316.5 ps, respectively, indicating their potential applications in ultrafast optics and optoelectronics. As a proof-of-concept, the photodetectors, which integrated SnSe NSs with monolayer graphene, show high photoresponsivities and excellent response speeds for different incident lasers. The maximum photo-responsivities for 405, 532, and 785 nm were 1.75 × 104 A/W, 4.63 × 103 A/W, and 1.52 × 103 A/W, respectively. The photoresponse times were ~22.6 ms, 11.6 ms, and 9.7 ms. This behavior was due to the broadband light response of SnSe NSs and fast transportation of photocarriers between the monolayer graphene and SnSe NSs.
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Affiliation(s)
- Xiangyang Li
- Shenzhen Key Laboratory of Laser Engineering, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, China; (X.L.); (H.Z.); (W.Z.); (Z.S.); (H.L.)
- College of New Materials and New Energies, Shenzhen Technology University, Shenzhen 518118, China; (Z.S.); (H.Z.)
| | - Zongpeng Song
- College of New Materials and New Energies, Shenzhen Technology University, Shenzhen 518118, China; (Z.S.); (H.Z.)
| | - Huancheng Zhao
- Shenzhen Key Laboratory of Laser Engineering, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, China; (X.L.); (H.Z.); (W.Z.); (Z.S.); (H.L.)
| | - Wenfei Zhang
- Shenzhen Key Laboratory of Laser Engineering, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, China; (X.L.); (H.Z.); (W.Z.); (Z.S.); (H.L.)
| | - Zhenhua Sun
- Shenzhen Key Laboratory of Laser Engineering, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, China; (X.L.); (H.Z.); (W.Z.); (Z.S.); (H.L.)
| | - Huawei Liang
- Shenzhen Key Laboratory of Laser Engineering, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, China; (X.L.); (H.Z.); (W.Z.); (Z.S.); (H.L.)
| | - Haiou Zhu
- College of New Materials and New Energies, Shenzhen Technology University, Shenzhen 518118, China; (Z.S.); (H.Z.)
| | - Jihong Pei
- College of Electronics and Information Engineering, Shenzhen University, Shenzhen 518060, China;
| | - Ling Li
- Shenzhen Key Laboratory of Laser Engineering, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, China; (X.L.); (H.Z.); (W.Z.); (Z.S.); (H.L.)
- Correspondence: author: (L.L.); (S.R.)
| | - Shuangchen Ruan
- Shenzhen Key Laboratory of Laser Engineering, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, China; (X.L.); (H.Z.); (W.Z.); (Z.S.); (H.L.)
- College of New Materials and New Energies, Shenzhen Technology University, Shenzhen 518118, China; (Z.S.); (H.Z.)
- Correspondence: author: (L.L.); (S.R.)
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