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Gao Y, Wang Y. Interplay of graphene-DNA interactions: Unveiling sensing potential of graphene materials. APPLIED PHYSICS REVIEWS 2024; 11:011306. [PMID: 38784221 PMCID: PMC11115426 DOI: 10.1063/5.0171364] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/25/2024]
Abstract
Graphene-based materials and DNA probes/nanostructures have emerged as building blocks for constructing powerful biosensors. Graphene-based materials possess exceptional properties, including two-dimensional atomically flat basal planes for biomolecule binding. DNA probes serve as excellent selective probes, exhibiting specific recognition capabilities toward diverse target analytes. Meanwhile, DNA nanostructures function as placement scaffolds, enabling the precise organization of molecular species at nanoscale and the positioning of complex biomolecular assays. The interplay of DNA probes/nanostructures and graphene-based materials has fostered the creation of intricate hybrid materials with user-defined architectures. This advancement has resulted in significant progress in developing novel biosensors for detecting DNA, RNA, small molecules, and proteins, as well as for DNA sequencing. Consequently, a profound understanding of the interactions between DNA and graphene-based materials is key to developing these biological devices. In this review, we systematically discussed the current comprehension of the interaction between DNA probes and graphene-based materials, and elucidated the latest advancements in DNA probe-graphene-based biosensors. Additionally, we concisely summarized recent research endeavors involving the deposition of DNA nanostructures on graphene-based materials and explored imminent biosensing applications by seamlessly integrating DNA nanostructures with graphene-based materials. Finally, we delineated the primary challenges and provided prospective insights into this rapidly developing field. We envision that this review will aid researchers in understanding the interactions between DNA and graphene-based materials, gaining deeper insight into the biosensing mechanisms of DNA-graphene-based biosensors, and designing novel biosensors for desired applications.
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Affiliation(s)
- Yanjing Gao
- Department of Chemical and Biomolecular Engineering, University of Notre Dame, Notre Dame, Indiana 46556, USA
| | - Yichun Wang
- Department of Chemical and Biomolecular Engineering, University of Notre Dame, Notre Dame, Indiana 46556, USA
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Zou F, Cong Y, Song W, Liu H, Li Y, Zhu Y, Zhao Y, Pan Y, Li Q. Interfacial Properties of Anisotropic Monolayer SiAs Transistors. NANOMATERIALS (BASEL, SWITZERLAND) 2024; 14:238. [PMID: 38334509 PMCID: PMC10856446 DOI: 10.3390/nano14030238] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/05/2024] [Revised: 01/17/2024] [Accepted: 01/18/2024] [Indexed: 02/10/2024]
Abstract
The newly prepared monolayer (ML) SiAs is expected to be a candidate channel material for next-generation nano-electronic devices in virtue of its proper bandgap, high carrier mobility, and anisotropic properties. The interfacial properties in ML SiAs field-effect transistors are comprehensively studied with electrodes (graphene, V2CO2, Au, Ag, and Cu) by using ab initio electronic structure calculations and quantum transport simulation. It is found that ML SiAs forms a weak van der Waals interaction with graphene and V2CO2, while it forms a strong interaction with bulk metals (Au, Ag, and Cu). Although ML SiAs has strong anisotropy, it is not reflected in the contact property. Based on the quantum transport simulation, ML SiAs forms n-type lateral Schottky contact with Au, Ag, and Cu electrodes with the Schottky barrier height (SBH) of 0.28 (0.27), 0.40 (0.47), and 0.45 (0.33) eV along the a (b) direction, respectively, while it forms p-type lateral Schottky contact with a graphene electrode with a SBH of 0.34 (0.28) eV. Fortunately, ML SiAs forms an ideal Ohmic contact with the V2CO2 electrode. This study not only gives a deep understanding of the interfacial properties of ML SiAs with electrodes but also provides a guide for the design of ML SiAs devices.
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Affiliation(s)
- Feihu Zou
- College of Physics, Qingdao University, Qingdao 266071, China
| | - Yao Cong
- State Key Laboratory of Heavy Oil Processing, Institute of New Energy, College of Chemistry and Chemical Engineering, China University of Petroleum (East China), Qingdao 266580, China
| | - Weiqi Song
- College of Physics, Qingdao University, Qingdao 266071, China
| | - Haosong Liu
- State Key Laboratory of Heavy Oil Processing, Institute of New Energy, College of Chemistry and Chemical Engineering, China University of Petroleum (East China), Qingdao 266580, China
| | - Yanan Li
- State Key Laboratory of Heavy Oil Processing, Institute of New Energy, College of Chemistry and Chemical Engineering, China University of Petroleum (East China), Qingdao 266580, China
| | - Yifan Zhu
- State Key Laboratory of Heavy Oil Processing, Institute of New Energy, College of Chemistry and Chemical Engineering, China University of Petroleum (East China), Qingdao 266580, China
| | - Yue Zhao
- College of Physics, Qingdao University, Qingdao 266071, China
| | - Yuanyuan Pan
- College of Physics, Qingdao University, Qingdao 266071, China
| | - Qiang Li
- College of Physics, Qingdao University, Qingdao 266071, China
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Ono T, Okuda S, Ushiba S, Kanai Y, Matsumoto K. Challenges for Field-Effect-Transistor-Based Graphene Biosensors. MATERIALS (BASEL, SWITZERLAND) 2024; 17:333. [PMID: 38255502 PMCID: PMC10817696 DOI: 10.3390/ma17020333] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/30/2023] [Revised: 12/28/2023] [Accepted: 01/06/2024] [Indexed: 01/24/2024]
Abstract
Owing to its outstanding physical properties, graphene has attracted attention as a promising biosensor material. Field-effect-transistor (FET)-based biosensors are particularly promising because of their high sensitivity that is achieved through the high carrier mobility of graphene. However, graphene-FET biosensors have not yet reached widespread practical applications owing to several problems. In this review, the authors focus on graphene-FET biosensors and discuss their advantages, the challenges to their development, and the solutions to the challenges. The problem of Debye screening, in which the surface charges of the detection target are shielded and undetectable, can be solved by using small-molecule receptors and their deformations and by using enzyme reaction products. To address the complexity of sample components and the detection mechanisms of graphene-FET biosensors, the authors outline measures against nonspecific adsorption and the remaining problems related to the detection mechanism itself. The authors also introduce a solution with which the molecular species that can reach the sensor surfaces are limited. Finally, the authors present multifaceted approaches to the sensor surfaces that provide much information to corroborate the results of electrical measurements. The measures and solutions introduced bring us closer to the practical realization of stable biosensors utilizing the superior characteristics of graphene.
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Affiliation(s)
- Takao Ono
- SANKEN, Osaka University, 8-1 Mihogaoka, Ibaraki, Osaka 567-0047, Japan
| | - Satoshi Okuda
- High Frequency & Optical Device Works, Mitsubishi Electric Corporation, 4-1 Mizuhara, Itami, Sendai 664-8641, Japan
| | - Shota Ushiba
- Murata Manufacturing Co., Ltd., 1-10-1 Higashikotari, Kyoto 617-8555, Japan
| | - Yasushi Kanai
- International Center for Synchrotron Radiation Innovation Smart, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan
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Nisar S, Basha B, Dastgeer G, Shahzad ZM, Kim H, Rabani I, Rasheed A, Al‐Buriahi MS, Irfan A, Eom J, Kim D. A Novel Biosensing Approach: Improving SnS 2 FET Sensitivity with a Tailored Supporter Molecule and Custom Substrate. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2023; 10:e2303654. [PMID: 37863822 PMCID: PMC10667857 DOI: 10.1002/advs.202303654] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/05/2023] [Revised: 08/28/2023] [Indexed: 10/22/2023]
Abstract
The exclusive features of two-dimensional (2D) semiconductors, such as high surface-to-volume ratios, tunable electronic properties, and biocompatibility, provide promising opportunities for developing highly sensitive biosensors. However, developing practical biosensors that can promptly detect low concentrations of target analytes remains a challenging task. Here, a field-effect-transistor comprising n-type transition metal dichalcogenide tin disulfide (SnS2 ) is developed over the hexagonal boron nitride (h-BN) for the detection of streptavidin protein (Strep.) as a target analyte. A self-designed receptor based on the pyrene-lysine conjugated with biotin (PLCB) is utilized to maintain the sensitivity of the SnS2 /h-BN FET because of the π-π stacking. The detection capabilities of SnS2 /h-BN FET are investigated using both Raman spectroscopy and electrical characterizations. The real-time electrical measurements exhibit that the SnS2 /h-BN FET is capable of detecting streptavidin at a remarkably low concentration of 0.5 pm, within 13.2 s. Additionally, the selectivity of the device is investigated by measuring its response against a Cow-like serum egg white protein (BSA), having a comparative molecular weight to that of the streptavidin. These results indicate a high sensitivity and rapid response of SnS2 /h-BN biosensor against the selective proteins, which can have significant implications in several fields including point-of-care diagnostics, drug discovery, and environmental monitoring.
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Affiliation(s)
- Sobia Nisar
- Department of Electrical EngineeringSejong UniversitySeoul05006Republic of Korea
- Department of Convergence Engineering for Intelligent DroneSejong UniversitySeoul05006Republic of Korea
| | - Beriham Basha
- Department of PhysicsCollege of SciencesPrincess Nourah bint Abdulrahman UniversityP. O Box 84428Riyadh11671Saudi Arabia
| | - Ghulam Dastgeer
- Department of Physics and AstronomySejong UniversitySeoul05006Republic of Korea
| | - Zafar M. Shahzad
- SKKU Advanced Institute of Nanotechnology (SAINT) and Department of Chemical and Polymer EngineeringSungkyunkwan UniversitySuwon16419Republic of Korea
- Department of Chemical and Polymer EngineeringUniversity of Engineering & TechnologyFaisalabad CampusLahore38000Pakistan
| | - Honggyun Kim
- Department of Semiconductor Systems EngineeringSejong UniversitySeoul05006Republic of Korea
| | - Iqra Rabani
- Department of Nanotechnology and Advanced Materials EngineeringSejong UniversitySeoul05006Republic of Korea
| | - Aamir Rasheed
- School of Materials Science and EngineeringAnhui UniversityHefeiAnhui230601People's Republic of China
| | | | - Ahmad Irfan
- Department of ChemistryCollege of ScienceKing Khalid UniversityP.O. Box 9004Abha61413Saudi Arabia
| | - Jonghwa Eom
- Department of Physics and AstronomySejong UniversitySeoul05006Republic of Korea
| | - Deok‐kee Kim
- Department of Electrical EngineeringSejong UniversitySeoul05006Republic of Korea
- Department of Semiconductor Systems EngineeringSejong UniversitySeoul05006Republic of Korea
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Gubeljak P, Xu T, Pedrazzetti L, Burton OJ, Magagnin L, Hofmann S, Malliaras GG, Lombardo A. Electrochemically-gated graphene broadband microwave waveguides for ultrasensitive biosensing. NANOSCALE 2023; 15:15304-15317. [PMID: 37682040 DOI: 10.1039/d3nr01239e] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 09/09/2023]
Abstract
Identification of non-amplified DNA sequences and single-base mutations is essential for molecular biology and genetic diagnostics. This paper reports a novel sensor consisting of electrochemically-gated graphene coplanar waveguides coupled with a microfluidic channel. Upon exposure to analytes, propagation of electromagnetic waves in the waveguides is modified as a result of interactions with the fringing field and modulation of graphene dynamic conductivity resulting from electrostatic gating. Probe DNA sequences are immobilised on the graphene surface, and the sensor is exposed to DNA sequences which either perfectly match the probe, contain a single-base mismatch or are unrelated. By monitoring the scattering parameters at frequencies between 50 MHz and 50 GHz, unambiguous and reproducible discrimination of the different strands is achieved at concentrations as low as one attomole per litre (1 aM). By controlling and synchronising frequency sweeps, electrochemical gating, and liquid flow in the microfluidic channel, the sensor generates multidimensional datasets. Advanced data analysis techniques are utilised to take full advantage of the richness of the dataset. A classification accuracy >97% between all three sequences is achieved using different Machine Learning models, even in the presence of simulated noise and low signal-to-noise ratios. The sensor exceeds state-of-the-art sensitivity of field-effect transistors and microwave sensors for the identification of single-base mismatches.
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Affiliation(s)
- Patrik Gubeljak
- Cambridge Graphene Centre, Department of Engineering, University of Cambridge, UK
- Department of Engineering, University of Cambridge, UK
| | - Tianhui Xu
- Department of Engineering, University of Cambridge, UK
- Department of Electronic and Electrical Engineering, University College London, London, UK
| | - Lorenzo Pedrazzetti
- Department of Engineering, University of Cambridge, UK
- Dipartimento di Chimica, Materiali e Ingegneria Chimica "Giulio Natta", Politecnico di Milano, Italy
| | | | - Luca Magagnin
- Dipartimento di Chimica, Materiali e Ingegneria Chimica "Giulio Natta", Politecnico di Milano, Italy
| | | | | | - Antonio Lombardo
- Department of Engineering, University of Cambridge, UK
- Department of Electronic and Electrical Engineering, University College London, London, UK
- London Centre for Nanotechnology, University College London, UK.
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Chen S, Sun Y, Fan X, Xu Y, Chen S, Zhang X, Man B, Yang C, Du J. Review on two-dimensional material-based field-effect transistor biosensors: accomplishments, mechanisms, and perspectives. J Nanobiotechnology 2023; 21:144. [PMID: 37122015 PMCID: PMC10148958 DOI: 10.1186/s12951-023-01898-z] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 09/08/2022] [Accepted: 04/16/2023] [Indexed: 05/02/2023] Open
Abstract
Field-effect transistor (FET) is regarded as the most promising candidate for the next-generation biosensor, benefiting from the advantages of label-free, easy operation, low cost, easy integration, and direct detection of biomarkers in liquid environments. With the burgeoning advances in nanotechnology and biotechnology, researchers are trying to improve the sensitivity of FET biosensors and broaden their application scenarios from multiple strategies. In order to enable researchers to understand and apply FET biosensors deeply, focusing on the multidisciplinary technical details, the iteration and evolution of FET biosensors are reviewed from exploring the sensing mechanism in detecting biomolecules (research direction 1), the response signal type (research direction 2), the sensing performance optimization (research direction 3), and the integration strategy (research direction 4). Aiming at each research direction, forward perspectives and dialectical evaluations are summarized to enlighten rewarding investigations.
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Affiliation(s)
- Shuo Chen
- School of Physics and Electronics, Shandong Normal University, Jinan, 250014, People's Republic of China
| | - Yang Sun
- Beijing Key Laboratory for Bioengineering and Sensing Technology, School of Chemistry and Biological Engineering, University of Science and Technology, 30 Xueyuan Road, Haidian District, Beijing, 100083, People's Republic of China
| | - Xiangyu Fan
- School of Physics and Electronics, Shandong Normal University, Jinan, 250014, People's Republic of China
| | - Yazhe Xu
- School of Physics and Electronics, Shandong Normal University, Jinan, 250014, People's Republic of China
| | - Shanshan Chen
- School of Physics and Electronics, Shandong Normal University, Jinan, 250014, People's Republic of China
| | - Xinhao Zhang
- School of Physics and Electronics, Shandong Normal University, Jinan, 250014, People's Republic of China
| | - Baoyuan Man
- School of Physics and Electronics, Shandong Normal University, Jinan, 250014, People's Republic of China
| | - Cheng Yang
- School of Physics and Electronics, Shandong Normal University, Jinan, 250014, People's Republic of China.
| | - Jun Du
- School of Physics and Electronics, Shandong Normal University, Jinan, 250014, People's Republic of China.
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Xiao X, Zhang Y, Zhou L, Li B, Gu L. Photoluminescence and Fluorescence Quenching of Graphene Oxide: A Review. NANOMATERIALS 2022; 12:nano12142444. [PMID: 35889668 PMCID: PMC9319665 DOI: 10.3390/nano12142444] [Citation(s) in RCA: 13] [Impact Index Per Article: 6.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 06/26/2022] [Revised: 07/07/2022] [Accepted: 07/15/2022] [Indexed: 01/14/2023]
Abstract
In recent decades, photoluminescence (PL) material with excellent optical properties has been a hot topic. Graphene oxide (GO) is an excellent candidate for PL material because of its unique optical properties, compared to pure graphene. The existence of an internal band gap in GO can enrich its optical properties significantly. Therefore, GO has been widely applied in many fields such as material science, biomedicine, anti-counterfeiting, and so on. Over the past decade, GO and quantum dots (GOQDs) have attracted the attention of many researchers as luminescence materials, but their luminescence mechanism is still ambiguous, although some theoretical results have been achieved. In addition, GO and GOQDs have fluorescence quenching properties, which can be used in medical imaging and biosensors. In this review, we outline the recent work on the photoluminescence phenomena and quenching process of GO and GOQDs. First, the PL mechanisms of GO are discussed in depth. Second, the fluorescence quenching mechanism and regulation of GO are introduced. Following that, the applications of PL and fluorescence quenching of GO-including biomedicine, electronic devices, material imaging-are addressed. Finally, future development of PL and fluorescence quenching of GO is proposed, and the challenges exploring the optical properties of GO are summarized.
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Affiliation(s)
| | | | | | - Bin Li
- Correspondence: (B.L.); (L.G.)
| | - Lin Gu
- Correspondence: (B.L.); (L.G.)
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Wang L, An N, He X, Zhang X, Zhu A, Yao B, Zhang Y. Dynamic and Active THz Graphene Metamaterial Devices. NANOMATERIALS 2022; 12:nano12122097. [PMID: 35745433 PMCID: PMC9228136 DOI: 10.3390/nano12122097] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 04/29/2022] [Revised: 06/13/2022] [Accepted: 06/14/2022] [Indexed: 02/06/2023]
Abstract
In recent years, terahertz waves have attracted significant attention for their promising applications. Due to a broadband optical response, an ultra-fast relaxation time, a high nonlinear coefficient of graphene, and the flexible and controllable physical characteristics of its meta-structure, graphene metamaterial has been widely explored in interdisciplinary frontier research, especially in the technologically important terahertz (THz) frequency range. Here, graphene’s linear and nonlinear properties and typical applications of graphene metamaterial are reviewed. Specifically, the discussion focuses on applications in optically and electrically actuated terahertz amplitude, phase, and harmonic generation. The review concludes with a brief examination of potential prospects and trends in graphene metamaterial.
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Affiliation(s)
- Lan Wang
- Yangtze Delta Region Institute (Huzhou), University of Electronic Science and Technology of China, Huzhou 313001, China;
| | - Ning An
- Key Laboratory of Optical Fiber Sensing and Communications (Education Ministry of China), University of Electronic Science and Technology of China, Chengdu 610054, China;
| | - Xusheng He
- School of Electronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 610054, China; (X.H.); (X.Z.); (A.Z.)
| | - Xinfeng Zhang
- School of Electronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 610054, China; (X.H.); (X.Z.); (A.Z.)
| | - Ao Zhu
- School of Electronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 610054, China; (X.H.); (X.Z.); (A.Z.)
| | - Baicheng Yao
- Key Laboratory of Optical Fiber Sensing and Communications (Education Ministry of China), University of Electronic Science and Technology of China, Chengdu 610054, China;
- Correspondence: (B.Y.); (Y.Z.)
| | - Yaxin Zhang
- School of Electronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 610054, China; (X.H.); (X.Z.); (A.Z.)
- Correspondence: (B.Y.); (Y.Z.)
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Dai C, Liu Y, Wei D. Two-Dimensional Field-Effect Transistor Sensors: The Road toward Commercialization. Chem Rev 2022; 122:10319-10392. [PMID: 35412802 DOI: 10.1021/acs.chemrev.1c00924] [Citation(s) in RCA: 51] [Impact Index Per Article: 25.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 02/07/2023]
Abstract
The evolutionary success in information technology has been sustained by the rapid growth of sensor technology. Recently, advances in sensor technology have promoted the ambitious requirement to build intelligent systems that can be controlled by external stimuli along with independent operation, adaptivity, and low energy expenditure. Among various sensing techniques, field-effect transistors (FETs) with channels made of two-dimensional (2D) materials attract increasing attention for advantages such as label-free detection, fast response, easy operation, and capability of integration. With atomic thickness, 2D materials restrict the carrier flow within the material surface and expose it directly to the external environment, leading to efficient signal acquisition and conversion. This review summarizes the latest advances of 2D-materials-based FET (2D FET) sensors in a comprehensive manner that contains the material, operating principles, fabrication technologies, proof-of-concept applications, and prototypes. First, a brief description of the background and fundamentals is provided. The subsequent contents summarize physical, chemical, and biological 2D FET sensors and their applications. Then, we highlight the challenges of their commercialization and discuss corresponding solution techniques. The following section presents a systematic survey of recent progress in developing commercial prototypes. Lastly, we summarize the long-standing efforts and prospective future development of 2D FET-based sensing systems toward commercialization.
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Affiliation(s)
- Changhao Dai
- State Key Laboratory of Molecular Engineering of Polymers, Department of Macromolecular Science, Fudan University, Shanghai 200433, China.,Laboratory of Molecular Materials and Devices, Fudan University, Shanghai 200433, China
| | - Yunqi Liu
- Laboratory of Molecular Materials and Devices, Fudan University, Shanghai 200433, China
| | - Dacheng Wei
- State Key Laboratory of Molecular Engineering of Polymers, Department of Macromolecular Science, Fudan University, Shanghai 200433, China.,Laboratory of Molecular Materials and Devices, Fudan University, Shanghai 200433, China
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