Doping Compensation Enables High-Detectivity Infrared Organic Photodiodes for Image Sensing

Ultranarrow-bandgap small-molecule acceptor enables sensitive SWIR detection and dynamic upconversion imaging

Short-wavelength infrared (SWIR) light detection plays a key role in modern technologies. Emerging solution-processed organic semiconductors are promising for cost-effective, flexible, and large-area SWIR organic photodiodes (OPDs). However, the spectral responsivity (R) and specific detectivity (D*) of SWIR OPDs are restricted by insufficient exciton dissociation and high noise current. In this work, we synthesized an SWIR small molecule with a spectral coverage of 0.3 to 1.3 micrometers peaking at 1100 nanometers. The photodiode, with optimized exciton dissociation, charge injection, and SWIR transmittance, achieves a record high R of 0.53 ampere per watt and D* of 1.71 × 1013 Jones at 1110 nanometers under zero bias. The D* at 1 to 1.2 micrometers surpasses that of the uncooled commercial InGaAs photodiode. Furthermore, large-area semitransparent all-organic upconversion devices integrating the SWIR photodiode realized static and dynamic SWIR-to-visible imaging, along with excellent upconversion efficiency and spatial resolution. This work provides alternative insights for developing sensitive organic SWIR detection.

Cyano-Coordinated Tin Halide Perovskites for Wearable Health Monitoring and Weak Light Imaging

Low-toxicity tin halide perovskites with excellent optoelectronic properties are promising candidates for photodetection. However, tin halide perovskite photodetectors have suffered from high dark current owing to uncontrollable Sn2+ oxidation. Here, 2-cyanoethan-1-aminium iodide (CNI) is introduced in CH(NH2 )2 SnI3 (FASnI3 ) perovskite films to inhibit Sn2+ oxidation by the strong coordination interaction between the cyano group (C≡N) and Sn2+ . Consequently, FASnI3 -CNI films exhibit reduced nonradiative recombination and lower trap density. The self-powered photodetector based on FASnI3 -CNI exhibits low dark current (1.04 × 10-9 A cm-2 ), high detectivity (2.2 × 1013 Jones at 785 nm), fast response speed (2.62 µs), and good stability. Mechanism studies show the increase in the activation energy required for thermal emission and generated carriers, leading to a lower dark current in the FASnI3 -CNI photodetector. In addition, flexible photodetectors based on FASnI3 -CNI, exhibiting high detectivity and fast response speed, are employed in wearable electronics to monitor the human heart rate under weak light and zero bias conditions. Finally, the FASnI3 -CNI perovskite photodetectors are integrated with a 32 × 32 thin-film transistor backplane, capable of ultraweak light (170 nW cm-2 ) real-time imaging with high contrast, and zero power consumption, demonstrating the great potential for image sensor applications.

Dual Interface Modification Using Potassium Aspartic Acid to Realize Low Dark Current, High-Speed Nonfullerene Photodetectors

Organic photodetectors (OPDs) have attracted tremendous interest due to their potential applications in wearable electronics. However, due to the nonideal contacts between the electrodes and organic semiconductors, OPDs still suffer from high dark current and slow frequency response. Herein, by inserting potassium aspartic acid (PAA) interlayers between ITO/metal oxides and the metal oxides/active layer, the shunts and hole injections are blocked and the energy levels of the electrodes are aligned. As a result, our dual-interface modified OPDs (ITO/PAA/ZnO/PAA/PTB7-Th:ITIC/MoO3/Ag) exhibit suppressed dark current 550 times lower than the reference device, corresponding to specific detectivity of 2.1 × 1012 Jones, broad linear dynamic range of 113 dB, and quick response time to the nanosecond level. PAA interlayers have also been demonstrated to improve the storage stability of OPDs, leading to 10 times slower degradation for the on/off ratio when compared with the reference and conventional polyethylenimine-modified OPDs.

High-speed flexible near-infrared organic photodiode for optical communication

Optical communication is a particularly compelling technology for tackling the speed and capacity bottlenecks in data communication in modern society. Currently, the silicon photodetector plays a dominant role in high-speed optical communication across the visible-near-infrared spectrum. However, its intrinsic rigid structure, high working bias and low responsivity essentially limit its application in next-generation flexible optoelectronic devices. Herein, we report a narrow-bandgap non-fullerene acceptor (NFA) with a remarkable π-extension in the direction of both central and end units (CH17) with respect to the Y6 series, which demonstrates a more effective and compact 3D molecular packing, leading to lower trap states and energetic disorders in the photoactive film. Consequently, the optimized solution-processed organic photodetector (OPD) with CH17 exhibits a remarkable response time of 91 ns (λ = 880 nm) due to the high charge mobility and low parasitic capacitance, exceeding the values of most commercial Si photodiodes and all NFA-based OPDs operating in self-powered mode. More significantly, the flexible OPD exhibits negligible performance attenuation (<1%) after bending for 500 cycles, and maintains 96% of its initial performance even after 550 h of indoor exposure. Furthermore, the high-speed OPD demonstrates a high data transmission rate of 80 MHz with a bit error rate of 3.5 [Formula: see text] 10-4, meaning it has great potential in next-generation high-speed flexible optical communication systems.

Near-Infrared Organic Photodetectors with Spectral Response over 1200 nm Adopting a Thieno[3,4-c]thiadiazole-Based Acceptor

The nonclassical ten-pi-electron 5,5-fused thieno[3,4-c]thiadiazole (TTD) unit is an excellent building block for constructing sub-silicon-band gap organic semiconductors. However, no small molecule acceptor (SMA) materials based on TTD have been reported despite the fact that high-sensitivity near-infrared organic photodetectors (OPDs) are generally achieved by using SMAs. In this work, we report a TTD-based narrow band gap (0.95 eV) SMA material TTD(DTC-2FIC)2 with strong near-infrared absorption. Employing PTB7-Th as a donor, OPDs based on TTD(DTC-2FIC)2 exhibit an optimized responsivity of 0.095 (±0.007) A W-1 at 1100 nm and sustain a decent responsivity of 0.074 (±0.008) A W-1 at 1200 nm. Moreover, a good specific detectivity over 1 × 1011 Jones is achieved at a wavelength of 1200 nm. Detailed characterizations imply that the performance of TTD(DTC-2FIC)2-based OPDs may be substantially improved by choosing lower-mixing donors with shallower energy levels. This work demonstrates that SMAs incorporating TTD as the core unit hold promise for constructing high-sensitivity sub-silicon-band gap OPDs.

An A-D-A'-D-A-Type Narrow Bandgap Electron Acceptor Based on Selenophene-Flanked Diketopyrrolopyrrole for Sensitive Near-Infrared Photodetection

Near-infrared organic photodetectors possess great application potential in night vision, optical communication, and image sensing, but their development is limited by the lack of narrow bandgap organic semiconductors. A-D-A'-D-A-type molecules, featuring multiple intramolecular charge transfer effects, offer a robust framework for achieving near-infrared light absorption. Herein, we report a novel A-D-A'-D-A-type narrow bandgap electron acceptor named DPPSe-4Cl, which incorporates a selenophene-flanked diketopyrrolopyrrole (Se-DPP) unit as its central A' component. This molecule demonstrates exceptional near-infrared absorption properties with an absorption onset reaching 1120 nm and a low optical bandgap of 1.11 eV, owing to the strong electron-withdrawing ability and quinoidal resonance effect induced by the Se-DPP unit. By implementing a doping compensation strategy assisted by Y6 to reduce the trap density in the photoactive layer, the optimized organic photodetector based on DPPSe-4Cl exhibited efficient spectral response and remarkable sensitivity in the range of 300-1100 nm. Particularly, a specific detectivity surpassing 1012 Jones in the wavelength range of 410-1030 nm is achieved. This work offers a promising approach for developing highly sensitive visible to near-infrared broadband photodetection technology using organic semiconductors.

Propeller vs Quasi-Planar 6-Cantilever Small Molecular Platforms with Extremely Two-Dimensional Conjugated Extension

Two exotic 6-cantilever small molecular platforms, characteristic of quite different molecular configurations of propeller and quasi-plane, are established by extremely two-dimensional conjugated extension. When applied in small molecular acceptors, the only two cases of CH25 and CH26 that could contain six terminals and such broad conjugated backbones have been afforded thus far, rendering featured absorptions, small reorganization and exciton binding energies. Moreover, their distinctive but completely different molecular geometries result in sharply contrasting nanoscale film morphologies. Finally, CH26 contributes to the best device efficiency of 15.41 % among acceptors with six terminals, demonstrating two pioneered yet highly promising 6-cantilever molecular innovation platforms.

Near-Infrared Organic Photodetectors toward Skin-Integrated Photoplethysmography-Electrocardiography Multimodal Sensing System

In the fast-evolving landscape of decentralized and personalized healthcare, the need for multimodal biosensing systems that integrate seamlessly with the human body is growing rapidly. This presents a significant challenge in devising ultraflexible configurations that can accommodate multiple sensors and designing high-performance sensing components that remain stable over long periods. To overcome these challenges, ultraflexible organic photodetectors (OPDs) that exhibit exceptional performance under near-infrared illumination while maintaining long-term stability are developed. These ultraflexible OPDs demonstrate a photoresponsivity of 0.53 A W-1 under 940 nm, shot-noise-limited specific detectivity of 3.4 × 1013 Jones, and cut-off response frequency beyond 1 MHz at -3 dB. As a result, the flexible photoplethysmography sensor boasts a high signal-to-noise ratio and stable peak-to-peak amplitude under hypoxic and hypoperfusion conditions, outperforming commercial finger pulse oximeters. This ensures precise extraction of blood oxygen saturation in dynamic working conditions. Ultraflexible OPDs are further integrated with conductive polymer electrodes on an ultrathin hydrogel substrate, allowing for direct interface with soft and dynamic skin. This skin-integrated sensing platform provides accurate measurement of photoelectric and biopotential signals in a time-synchronized manner, reproducing the functionality of conventional technologies without their inherent limitations.

Organic Electronics in Biosensing: A Promising Frontier for Medical and Environmental Applications

The promising field of organic electronics has ushered in a new era of biosensing technology, thus offering a promising frontier for applications in both medical diagnostics and environmental monitoring. This review paper provides a comprehensive overview of organic electronics' remarkable progress and potential in biosensing applications. It explores the multifaceted aspects of organic materials and devices, thereby highlighting their unique advantages, such as flexibility, biocompatibility, and low-cost fabrication. The paper delves into the diverse range of biosensors enabled by organic electronics, including electrochemical, optical, piezoelectric, and thermal sensors, thus showcasing their versatility in detecting biomolecules, pathogens, and environmental pollutants. Furthermore, integrating organic biosensors into wearable devices and the Internet of Things (IoT) ecosystem is discussed, wherein they offer real-time, remote, and personalized monitoring solutions. The review also addresses the current challenges and future prospects of organic biosensing, thus emphasizing the potential for breakthroughs in personalized medicine, environmental sustainability, and the advancement of human health and well-being.

All-Polymer Solar Cells and Photodetectors with Improved Stability Enabled by Terpolymers Containing Antioxidant Side Chains

It is of vital importance to improve the long-term and photostability of organic photovoltaics, including organic solar cells (OSCs) and organic photodetectors (OPDs), for their ultimate industrialization. Herein, two series of terpolymers featuring with an antioxidant butylated hydroxytoluene (BHT)-terminated side chain, PTzBI-EHp-BTBHTx and N2200-BTBHTx (x = 0.05, 0.1, 0.2), are designed and synthesized. It was found that incorporating appropriate ratio of benzothiadiazole (BT) with BHT side chains on the conjugated backbone would induce negligible effect on the molecular weight, absorption spectra and energy levels of polymers, however, which would obviously enhance the photostability of these polymers. Consequently, all-polymer solar cells (all-PSCs) and photodetectors were fabricated, and the all-PSC based on PTzBI-EHp-BTBHT0.05: N2200 realized an optimal power conversion efficiency (PCE) approaching ~ 10%, outperforming the device based on pristine PTzBI-EHp: N2200. Impressively, the all-PSCs based on BHT-featuring terpolymers displayed alleviated PCEs degradation under continuous irradiation for 300 h due to the improved morphological and photostability of active layers. The OPDs based on BHT-featuring terpolymers achieved a lower dark current at - 0.1 bias, which could be stabilized even after irradiation over 400 h. This study provides a feasible approach to develop terpolymers with antioxidant efficacy for improving the lifetime of OSCs and OPDs.

Efficient Near-Infrared Organic Photodetectors with Spectral Response up to 1600 nm for Accurate Alcohol Concentration Detection

The development of near-infrared organic photodetectors (NIR-OPDs) in 1000-1700 nm is essential for medical monitoring, food quality inspection, machine vision, and biomedical imaging. However, when solving the high dark current density (J_D) in bulk-heterojunction (BHJ) NIR-OPDs based on narrow-bandgap systems, it is often accompanied by photocurrent loss, which is a great challenge in achieving high-performance NIR-OPDs. Here, an ideal hybrid pseudo-PHJ (planar-heterojunction)/BHJ structure is proposed to overcome this challenge, which is introducing the N2200 layer between the cathode and BHJ. The introduction of the N2200 raises the external charge injection barrier and reduces the trap density, thus achieving significant suppression of J_D (6.22 × 10^-7 A cm^-2 at -0.2 V bias, about 2 orders of magnitude lower compared to the BHJ NIR-OPDs). Meanwhile, the hybrid structure combines the advantages of PHJ and BHJ, thus maintaining a high photocurrent, resulting in responsivity and detectivity of 18.71 mA W^-1 and 4.19 × 10¹⁰ Jones, respectively, at 1400 nm at -0.2 V bias, which is superior to the performance of BHJ NIR-OPDs. And the hybrid structured NIR-OPDs are proven to rapidly quantify the alcohol content of mixtures to within 2% accuracy, which exhibits great potential for application in the food and pharmaceutical industries.

Sensitive photodetection below silicon bandgap using quinoid-capped organic semiconductors

High-sensitivity organic photodetectors (OPDs) with strong near-infrared (NIR) photoresponse have attracted enormous attention due to potential applications in emerging technologies. However, few organic semiconductors have been reported with photoelectric response beyond ~1.1 μm, the detection limit of silicon detectors. Here, we extend the absorption of organic small-molecule semiconductors to below silicon bandgap, and even to 0.77 eV, through introducing the newly designed quinoid-terminals with high Mulliken-electronegativity (5.62 eV). The fabricated photodiode-type NIR OPDs exhibit detectivity (D^*) over 10¹² Jones in 0.41 to 1.2 μm under zero bias with a maximum of 2.9 × 10¹² Jones at 1.02 μm, which is the highest D^* for reported OPDs in photovoltaic-mode with response spectra beyond 1.1 μm. The high D^* in 0.9 to 1.2 μm is comparable to those of commercial InGaAs photodetectors, despite the detection limit of our OPDs is shorter than InGaAs (~1.7 μm). A spectrometer prototype with a wide measurable region (0.4 to 1.25 μm) and NIR imaging under 1.2-μm illumination are demonstrated successfully in OPDs.

Organic Photodiodes with Thermally Reliable Dark Current and Excellent Detectivity Enabled by Low Donor Concentration

Reducing the dark current (J_d) under reverse bias while maintaining a high external quantum efficiency (EQE) is essential for the practical application of organic photodiodes (OPDs). However, the high J_d of OPDs is generally difficult to reduce because its origin in organic photodiodes is still not well understood and is strongly temperature dependent. To address the issues related to high J_d in typical OPDs, we investigate fullerene-based OPDs with various donor concentrations. It is surprising that OPDs with a low donor concentration in the active layer can achieve a very low J_d of 1.68 × 10^-7 mA cm^-2 at a reverse bias of -2 V, which is almost temperature-independent owing to the low polymer content. More importantly, the fullerene-based OPDs with a low donor concentration of 5 wt % can still achieve an external quantum efficiency (EQE) as high as 40%, resulting in a promisingly high detectivity of above 10¹³ Jones at 300-800 nm compared to the OPDs with a standard donor/acceptor ratio. The presented optimized OPD device can also be used for real-time heart rate detection, indicating its potential for practical photon-sensing applications.

Identification of the Origin of Ultralow Dark Currents in Organic Photodiodes

Organic bulk heterojunction photodiodes (OPDs) attract attention for sensing and imaging. Their detectivity is typically limited by a substantial reverse bias dark current density (J_d ). Recently, using thermal admittance or spectral photocurrent measurements, J_d has been attributed to thermal charge generation mediated by mid-gap states. Here, the temperature dependence of J_d in state-of-the-art OPDs is reported with J_d down to 10^-9  mA cm^-2 at -0.5 V bias. For a variety of donor-acceptor bulk-heterojunction blends it is found that the thermal activation energy of J_d is lower than the effective bandgap of the blends, by ca. 0.3 to 0.5 eV, but higher than expected for mid-gap states. Ultra-sensitive sub-bandgap photocurrent spectroscopy reveals that the minimum photon energy for optical charge generation in OPDs correlates with the dark current thermal activation energy. The dark current in OPDs is attributed to thermal charge generation at the donor-acceptor interface mediated by intra-gap states near the band edges.

Organic and quantum dot hybrid photodetectors: towards full-band and fast detection

Photodetectors hold great application potential in many fields such as image sensing, night vision, infrared communication and health monitoring. To date, commercial photodetectors mainly rely on inorganic semiconductors, e.g., monocrystalline silicon, germanium, and indium selenide/gallium with complex and costly fabrication, which are hardly compatible with wearable electronics. In contrast, organic conjugated materials provide great superiority in flexibility and stretchability. In this Highlight, the unique properties of organic and quantum dot photodetectors were firstly discussed to reveal the great complementarity of the two technologies. Subsequently, the recent advance of organic/quantum dot hybrid photodetectors was outlined to highlight their great potential in developing broadband and high-performance photodetectors. Moreover, the multiple functions (e.g., dual-band detection and upconversion detection) of hybrid photodetectors were highlighted for their promising application in image sensing and infrared detection. Lastly, we present a forword-looking discussion on the challenges and our insights for the further advancement of hybrid photodetectors. This work may spark enormous research attention in organic/quantum dot electronics and advance the commercial applications.