1
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Zhou H, Kim H, Jeong WJ, Lee T. Toward Intrinsically Stretchable OLEDs with High Efficiency. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2025; 37:e2420008. [PMID: 39981776 PMCID: PMC11983261 DOI: 10.1002/adma.202420008] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/19/2024] [Revised: 02/04/2025] [Indexed: 02/22/2025]
Abstract
Wearable electronics require stretchable displays that can withstand large and repeated mechanical deformation without failure. Intrinsically stretchable organic light-emitting diodes (ISOLEDs) that operate under DC voltage provide promising candidates for wearable display applications. However, the lack of sophisticated stretchable materials and processing techniques suitable for ISOLEDs results in a significant deficit in the efficiency of state-of-the-art ISOLEDs compared to industrial standards. The design of stretchable conducting and semiconducting materials poses a significant challenge because of trade-off relationships between stretchability and properties such as conductivity and charge carrier mobility. To increase the efficiency of ISOLEDs to meet industrial standards, strategies to overcome these trade-offs must be developed. This perspective discusses recent progress and challenges in designing stretchable electrodes, light-emitting materials, transport materials, and potential applications of ISOLEDs. It provides a useful guide in this field to develop efficient ISOLEDs for system-level integration.
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Affiliation(s)
- Huanyu Zhou
- Department of Materials Science and EngineeringSeoul National UniversitySeoul08826Republic of Korea
- BK21 PLUS SNU Materials Division for Educating Creative Global LeadersSeoul National UniversitySeoul08826Republic of Korea
| | - Hyun‐Wook Kim
- Department of Materials Science and EngineeringSeoul National UniversitySeoul08826Republic of Korea
| | - Woo Jin Jeong
- Department of Materials Science and EngineeringSeoul National UniversitySeoul08826Republic of Korea
| | - Tae‐Woo Lee
- Department of Materials Science and EngineeringSeoul National UniversitySeoul08826Republic of Korea
- Institute of Engineering ResearchInterdisciplinary Program in BioengineeringResearch Institute of Advanced MaterialsSoft FoundrySeoul National UniversitySeoul08826Republic of Korea
- SN Display Co., Ltd.Seoul08826Republic of Korea
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2
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Ni M, Zhuo Z, Zheng Y, Yang J, Sun L, Xu Z, An X, Wang S, Cai J, Bai L, Xie G, Xu M, Lin J, Wu Y, Huang W. High-Efficiency Intrinsically Thermoplastic Semiconducting Polymer with Excellent Strain-Tolerance Capacity for Flexible Ultra-Deep-Blue Polymer Light-Emitting Diodes. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2025; 37:e2411547. [PMID: 39801183 DOI: 10.1002/adma.202411547] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/06/2024] [Revised: 12/23/2024] [Indexed: 02/26/2025]
Abstract
Complex internal stresses that appear in flexible thin-film electronic devices under long-term deformation operation are associated with incompatible mechanical properties of the multiple layers, which potentially cause intralayer fracture and separation. These defects may result in device instability, performance loss, and failure. Herein, a thermoplastic functional strategy is proposed for manufacturing high-performance stretchable semiconducting polymers with excellent strain-tolerance capacities for flexible electronic devices. Internal plasticization is used to obtain a thermoplastic light-emitting polymer (N2) that can suppress intralayer tensile fracture and compressive separation to enhance the deformation stability of flexible thin-film optoelectronic devices, enabling outstanding energy dissipation capacity under stress. The thermoplastic films exhibit stable and efficient ultra-deep-blue emission with a high efficiency of ≈90% and chromaticity coordinates of (0.16, 0.04). Moreover, the N2-based rigid and flexible polymer light-emitting diodes (PLEDs) exhibit stable ultra-deep-blue electroluminescence properties with high EQEs of ≈2.4% and 1.9%, respectively. Compared with devices based on brittle PODPF, flexible PLEDs based on thermoplastic films effectively suppress performance degradation after hundreds of cycles of bending fatigue, even under extremely rigid conditions. Introducing intrinsically thermoplastic semiconducting polymers in flexible electronic devices can thus substantially enhance their operational stability under deformation.
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Affiliation(s)
- Mingjian Ni
- The Institute of Flexible Electronics (IFE Future Technologies), Xiamen University, 422 Siming South Road, Xiamen, 361005, China
| | - Zhiqiang Zhuo
- State Key Laboratory of Flexible Electronics (LOFE) & Institute of Advanced Materials (IAM), Nanjing Tech University (NanjingTech), 30 South Puzhu Road, Nanjing, 211816, China
| | - Yingying Zheng
- State Key Laboratory of Flexible Electronics (LOFE) & Institute of Advanced Materials (IAM), Nanjing Tech University (NanjingTech), 30 South Puzhu Road, Nanjing, 211816, China
| | - Jing Yang
- State Key Laboratory of Flexible Electronics (LOFE) & Institute of Advanced Materials (IAM), Nanjing Tech University (NanjingTech), 30 South Puzhu Road, Nanjing, 211816, China
| | - Lili Sun
- School of Flexible Electronics (SoFE) & State Key Laboratory of Optoelectronic Materials and Technologies, Sun Yat-sen University, 66 Gongchang Road, Shenzhen, 518107, China
| | - Zhenhua Xu
- State Key Laboratory of Flexible Electronics (LOFE) & Institute of Advanced Materials (IAM), Nanjing Tech University (NanjingTech), 30 South Puzhu Road, Nanjing, 211816, China
| | - Xiang An
- State Key Laboratory of Flexible Electronics (LOFE) & Institute of Advanced Materials (IAM), Nanjing Tech University (NanjingTech), 30 South Puzhu Road, Nanjing, 211816, China
| | - Shengjie Wang
- State Key Laboratory of Flexible Electronics (LOFE) & Institute of Advanced Materials (IAM), Nanjing Tech University (NanjingTech), 30 South Puzhu Road, Nanjing, 211816, China
| | - Jiangli Cai
- State Key Laboratory of Flexible Electronics (LOFE) & Institute of Advanced Materials (IAM), Nanjing Tech University (NanjingTech), 30 South Puzhu Road, Nanjing, 211816, China
| | - Lubing Bai
- State Key Laboratory of Flexible Electronics (LOFE) & Institute of Advanced Materials (IAM), Nanjing Tech University (NanjingTech), 30 South Puzhu Road, Nanjing, 211816, China
| | - Guohua Xie
- The Institute of Flexible Electronics (IFE Future Technologies), Xiamen University, 422 Siming South Road, Xiamen, 361005, China
| | - Man Xu
- State Key Laboratory of Flexible Electronics (LoFE) & Institute of Advanced Materials (IAM), Nanjing University of Posts & Telecommunications, 9 Wenyuan Road, Nanjing, 210023, China
| | - Jinyi Lin
- State Key Laboratory of Flexible Electronics (LOFE) & Institute of Advanced Materials (IAM), Nanjing Tech University (NanjingTech), 30 South Puzhu Road, Nanjing, 211816, China
- Institute of Quantum and Sustainable Technology (IQST), School of Chemistry and Chemical Engineering, Jiangsu University, Zhenjiang, 212013, China
| | - Yutong Wu
- State Key Laboratory of Flexible Electronics (LOFE) & Institute of Advanced Materials (IAM), Nanjing Tech University (NanjingTech), 30 South Puzhu Road, Nanjing, 211816, China
| | - Wei Huang
- The Institute of Flexible Electronics (IFE Future Technologies), Xiamen University, 422 Siming South Road, Xiamen, 361005, China
- State Key Laboratory of Flexible Electronics (LOFE) & Institute of Advanced Materials (IAM), Nanjing Tech University (NanjingTech), 30 South Puzhu Road, Nanjing, 211816, China
- School of Flexible Electronics (SoFE) & State Key Laboratory of Optoelectronic Materials and Technologies, Sun Yat-sen University, 66 Gongchang Road, Shenzhen, 518107, China
- State Key Laboratory of Flexible Electronics (LoFE) & Institute of Advanced Materials (IAM), Nanjing University of Posts & Telecommunications, 9 Wenyuan Road, Nanjing, 210023, China
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3
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Ma J, Xu M, Zhuo Z, Wang K, Li Q, Li H, Feng Q, Chen W, Yu N, Li M, Xie L, Lin J. Plasticizer Design Principle of "Like Dissolves Like": Semiconductor Fluid Plasticized Stretchable Fully π-Conjugated Polymers Films for Uniform Large-Area and Flexible Deep-Blue Polymer Light-Emitting Diodes. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2411449. [PMID: 39543791 DOI: 10.1002/adma.202411449] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/04/2024] [Revised: 10/24/2024] [Indexed: 11/17/2024]
Abstract
Physical blending of fully π-conjugated polymers (FπCPs) is an effective strategy to achieve intrinsically stretchable films for the fabrication of flexible optoelectronic devices, but easily causes phase separation, nonuniform morphology and uncontrollable photo-electronic processing. This may cause low efficiency, unstable and nonuniform emission, and poor color purity, which are undesirable for deep-blue flexible polymer light-emitting diodes (FPLEDs). Herein, a "Like Dissolves Like" design principle to prepare semiconductor fluid plasticizers (SFPs) is established and intrinsically stretchable FπCPs films via external plasticization for high-performance deep-blue FPLEDs are developed. Three fundamental requirements are proposed, "similar conjugated skeleton, similar molecular polarity, and similar electronic structures," to prepare model-matched nonpolar M1 and polar M2 plasticizers for poly(9,9-dioctylfluorene) (PFO). Large-area plasticized PFO films exhibit an efficient, narrowband, and stable ultra-deep-blue electroluminescence (FWHM < 40 nm, CIE: 0.12, 0.04), uniform morphology, and excellent intrinsic stretchability (fracture strain >20% and crack-onset strain >120%). Efficient and uniform deep-blue FPLEDs based on stretchable PFO films are fabricated with a high brightness of ≈3000 cd cm-2. Finally, blended PFO films exhibit outstanding stretch-deformation cycling stability of their deep-blue electroluminescent behavior, confirming the effectiveness of the "Like Dissolves Like" principle to design matched SFPs for stretchable FπCP films in flexible electronics.
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Affiliation(s)
- Jingyao Ma
- State Key Laboratory of Organic Electronics and Information Displays & Institute of Advanced Materials (IAM), Nanjing University of Posts and Telecommunications, 9 Wenyuan Road, Nanjing, 210023, China
| | - Man Xu
- State Key Laboratory of Organic Electronics and Information Displays & Institute of Advanced Materials (IAM), Nanjing University of Posts and Telecommunications, 9 Wenyuan Road, Nanjing, 210023, China
| | - Zhiqiang Zhuo
- Key Laboratory of Flexible Electronics (KLOFE) and Institute of Advanced Materials (IAM), Nanjing Tech University (NanjingTech), 30 South Puzhu Road, Nanjing, 211816, China
| | - Kuande Wang
- State Key Laboratory of Organic Electronics and Information Displays & Institute of Advanced Materials (IAM), Nanjing University of Posts and Telecommunications, 9 Wenyuan Road, Nanjing, 210023, China
| | - Qianyi Li
- State Key Laboratory of Organic Electronics and Information Displays & Institute of Advanced Materials (IAM), Nanjing University of Posts and Telecommunications, 9 Wenyuan Road, Nanjing, 210023, China
| | - Hao Li
- State Key Laboratory of Organic Electronics and Information Displays & Institute of Advanced Materials (IAM), Nanjing University of Posts and Telecommunications, 9 Wenyuan Road, Nanjing, 210023, China
| | - Quanyou Feng
- State Key Laboratory of Organic Electronics and Information Displays & Institute of Advanced Materials (IAM), Nanjing University of Posts and Telecommunications, 9 Wenyuan Road, Nanjing, 210023, China
| | - Wenyu Chen
- Key Laboratory of Flexible Electronics (KLOFE) and Institute of Advanced Materials (IAM), Nanjing Tech University (NanjingTech), 30 South Puzhu Road, Nanjing, 211816, China
| | - Ningning Yu
- Key Laboratory of Flexible Electronics (KLOFE) and Institute of Advanced Materials (IAM), Nanjing Tech University (NanjingTech), 30 South Puzhu Road, Nanjing, 211816, China
| | - Mengyuan Li
- Key Laboratory of Flexible Electronics (KLOFE) and Institute of Advanced Materials (IAM), Nanjing Tech University (NanjingTech), 30 South Puzhu Road, Nanjing, 211816, China
| | - Linghai Xie
- State Key Laboratory of Organic Electronics and Information Displays & Institute of Advanced Materials (IAM), Nanjing University of Posts and Telecommunications, 9 Wenyuan Road, Nanjing, 210023, China
| | - Jinyi Lin
- Key Laboratory of Flexible Electronics (KLOFE) and Institute of Advanced Materials (IAM), Nanjing Tech University (NanjingTech), 30 South Puzhu Road, Nanjing, 211816, China
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4
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Lv D, Liu X, Li J, Hou S, Li Y, Wang Z, Zhang Q, Wang S, Yu X, Han Y. Improving the Uniformity and Stretchability of Inkjet-Printed Films by Adding the Surfactant Triton X. ACS APPLIED MATERIALS & INTERFACES 2024. [PMID: 39568366 DOI: 10.1021/acsami.4c15774] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/22/2024]
Abstract
Stretchable organic light-emitting diodes (OLEDs) are a key component of stretchable electronics. Inkjet printing is a potential processing method for stretchable and flexible OLEDs. However, improving the uniformity and stretchability of the emission layer (EML) prepared by inkjet printing is challenging. Here, we propose a strategy to simultaneously improve the uniformity and stretchability of inkjet-printed films by tuning the Marangoni flow and increasing the free volume. To verify our idea, Triton X (TX) with a lipophilic alkyl end and a hydrophilic hydroxyl end was added to the Super Yellow (SY)/polystyrene-block-polybutadiene-block-polystyrene (SBS) blend film. TX played two roles. (1) To inhibit the coffee ring effect. The surface tension of the solution decreased because the hydrophilic ends of TX repelled with the nonpolar solvent toluene to decrease the cohesion of toluene molecules on the surface. Thus, the surface tension at the edges was lower than in the middle due to the high evaporation rate at the edges during solvent evaporation. This resulted in the generation of the inward Marangoni flow to drive the solute toward the middle. Therefore, the coffee ring effect was inhibited, and a uniform film was formed. (2) To improve the stretchability. With TX, the glass transition temperature decreased because TX acted as a plasticizer to insert between the polymer chains due to the attraction between the lipophilic ends of TX and the alkyl side chains of SY. This provided more free volume for the polymer chains to move and orientate under strain, which is beneficial for the stretchability. Finally, we fabricated OLEDs with the inkjet-printed stretchable EML. At 100% strain, the luminance kept 70% of the initial luminance, much higher than that without the surfactant (33%).
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Affiliation(s)
- Dong Lv
- State Key Laboratory of Polymer Physics and Chemistry, Changchun Institute of Applied Chemistry, Chinese Academy of Sciences, Changchun 130022, PR China
- School of Applied Chemistry and Engineering, University of Science and Technology of China, Hefei 230026, PR China
| | - Xuelei Liu
- State Key Laboratory of Polymer Physics and Chemistry, Changchun Institute of Applied Chemistry, Chinese Academy of Sciences, Changchun 130022, PR China
- School of Applied Chemistry and Engineering, University of Science and Technology of China, Hefei 230026, PR China
| | - Junhang Li
- State Key Laboratory of Polymer Physics and Chemistry, Changchun Institute of Applied Chemistry, Chinese Academy of Sciences, Changchun 130022, PR China
- School of Applied Chemistry and Engineering, University of Science and Technology of China, Hefei 230026, PR China
| | - Saiyin Hou
- State Key Laboratory of Polymer Physics and Chemistry, Changchun Institute of Applied Chemistry, Chinese Academy of Sciences, Changchun 130022, PR China
- School of Applied Chemistry and Engineering, University of Science and Technology of China, Hefei 230026, PR China
| | - Yinghan Li
- State Key Laboratory of Polymer Physics and Chemistry, Changchun Institute of Applied Chemistry, Chinese Academy of Sciences, Changchun 130022, PR China
- School of Applied Chemistry and Engineering, University of Science and Technology of China, Hefei 230026, PR China
| | - Zehao Wang
- State Key Laboratory of Polymer Physics and Chemistry, Changchun Institute of Applied Chemistry, Chinese Academy of Sciences, Changchun 130022, PR China
- School of Applied Chemistry and Engineering, University of Science and Technology of China, Hefei 230026, PR China
| | - Qiang Zhang
- State Key Laboratory of Polymer Physics and Chemistry, Changchun Institute of Applied Chemistry, Chinese Academy of Sciences, Changchun 130022, PR China
| | - Shumeng Wang
- State Key Laboratory of Polymer Physics and Chemistry, Changchun Institute of Applied Chemistry, Chinese Academy of Sciences, Changchun 130022, PR China
| | - Xinhong Yu
- State Key Laboratory of Polymer Physics and Chemistry, Changchun Institute of Applied Chemistry, Chinese Academy of Sciences, Changchun 130022, PR China
| | - Yanchun Han
- State Key Laboratory of Polymer Physics and Chemistry, Changchun Institute of Applied Chemistry, Chinese Academy of Sciences, Changchun 130022, PR China
- School of Applied Chemistry and Engineering, University of Science and Technology of China, Hefei 230026, PR China
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5
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Li C, Bian Y, Zhao Z, Liu Y, Guo Y. Advances in Biointegrated Wearable and Implantable Optoelectronic Devices for Cardiac Healthcare. CYBORG AND BIONIC SYSTEMS 2024; 5:0172. [PMID: 39431246 PMCID: PMC11486891 DOI: 10.34133/cbsystems.0172] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 07/12/2024] [Revised: 08/26/2024] [Accepted: 09/09/2024] [Indexed: 10/22/2024] Open
Abstract
With the prevalence of cardiovascular disease, it is imperative that medical monitoring and treatment become more instantaneous and comfortable for patients. Recently, wearable and implantable optoelectronic devices can be seamlessly integrated into human body to enable physiological monitoring and treatment in an imperceptible and spatiotemporally unconstrained manner, opening countless possibilities for the intelligent healthcare paradigm. To achieve biointegrated cardiac healthcare, researchers have focused on novel strategies for the construction of flexible/stretchable optoelectronic devices and systems. Here, we overview the progress of biointegrated flexible and stretchable optoelectronics for wearable and implantable cardiac healthcare devices. Firstly, the device design is addressed, including the mechanical design, interface adhesion, and encapsulation strategies. Next, the practical applications of optoelectronic devices for cardiac physiological monitoring, cardiac optogenetics, and nongenetic stimulation are presented. Finally, an outlook on biointegrated flexible and stretchable optoelectronic devices and systems for intelligent cardiac healthcare is discussed.
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Affiliation(s)
- Cheng Li
- Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry,
Chinese Academy of Sciences, Beijing 100190, China
- School of Chemical Sciences,
University of Chinese Academy of Sciences, Beijing 100049, China
| | - Yangshuang Bian
- Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry,
Chinese Academy of Sciences, Beijing 100190, China
- School of Chemical Sciences,
University of Chinese Academy of Sciences, Beijing 100049, China
| | - Zhiyuan Zhao
- Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry,
Chinese Academy of Sciences, Beijing 100190, China
- School of Chemical Sciences,
University of Chinese Academy of Sciences, Beijing 100049, China
| | - Yunqi Liu
- Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry,
Chinese Academy of Sciences, Beijing 100190, China
- School of Chemical Sciences,
University of Chinese Academy of Sciences, Beijing 100049, China
| | - Yunlong Guo
- Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry,
Chinese Academy of Sciences, Beijing 100190, China
- School of Chemical Sciences,
University of Chinese Academy of Sciences, Beijing 100049, China
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6
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Jiang N, Meng YJ, Zhu CY, Li KX, Li X, Xu YH, Xu JW, Bryce MR. Nonconjugated Polyurethane Derivatives with Aggregation-Induced Luminochromism for Multicolor and White Photoluminescent Films. ACS Macro Lett 2024; 13:1226-1232. [PMID: 39248726 PMCID: PMC11483944 DOI: 10.1021/acsmacrolett.4c00534] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 08/08/2024] [Revised: 09/02/2024] [Accepted: 09/04/2024] [Indexed: 09/10/2024]
Abstract
A simple and effective strategy to obtain solid-state multicolor emitting materials is a particularly attractive topic. Nonconventional/nonconjugated polymers are receiving widespread attention because of their advantages of rich structural diversity, low cost, and good processability. However, it is difficult to control the molecular conformation or to obtain the crystal structure of amorphous molecules, which means it is a challenge to obtain nontraditional polymeric materials with multicolor emission. In this work, a polyurethane derivative (PUH) with red-shifted emission was synthesized by a simple one-pot polymerization reaction. By exploiting the aggregation-induced luminochromism of PUH, a series of plastic films with tunable emission from blue to orange, and white-light emission, was obtained by doping different amounts of PUH into poly(methyl methacrylate) (PMMA), thereby changing the aggregation degree of PUH. This work demonstrates the excellent promise of polyurethane derivatives for the simple fabrication of large-scale flexible luminescent films.
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Affiliation(s)
- Nan Jiang
- Key
Laboratory of Preparation and Applications of Environmental Friendly
Materials, Key Laboratory of Functional Materials Physics and Chemistry
of the Ministry of Education, Jilin Normal
University, Changchun 130103, China
| | - Ya-Jie Meng
- Ministry-of-Education
Key Laboratory of Numerical Simulation of Large-Scale Complex System
(NSLSCS) and School of Chemistry and Materials Science, Nanjing Normal University, Nanjing 210023, China
| | - Chang-Yi Zhu
- Key
Laboratory of Preparation and Applications of Environmental Friendly
Materials, Key Laboratory of Functional Materials Physics and Chemistry
of the Ministry of Education, Jilin Normal
University, Changchun 130103, China
| | - Ke-Xin Li
- Key
Laboratory of Preparation and Applications of Environmental Friendly
Materials, Key Laboratory of Functional Materials Physics and Chemistry
of the Ministry of Education, Jilin Normal
University, Changchun 130103, China
| | - Xin Li
- Key
Laboratory of Preparation and Applications of Environmental Friendly
Materials, Key Laboratory of Functional Materials Physics and Chemistry
of the Ministry of Education, Jilin Normal
University, Changchun 130103, China
| | - Yan-Hong Xu
- Key
Laboratory of Preparation and Applications of Environmental Friendly
Materials, Key Laboratory of Functional Materials Physics and Chemistry
of the Ministry of Education, Jilin Normal
University, Changchun 130103, China
| | - Jia-Wei Xu
- Ministry-of-Education
Key Laboratory of Numerical Simulation of Large-Scale Complex System
(NSLSCS) and School of Chemistry and Materials Science, Nanjing Normal University, Nanjing 210023, China
| | - Martin R. Bryce
- Department
of Chemistry, Durham University, Durham DH1 3LE, United Kingdom
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7
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Zhu M, Shao Z, Li Y, Xiong Z, Yang Z, Chen J, Shi W, Wang C, Bian Y, Zhao Z, Guo Y, Liu Y. Molecular-Scale Geometric Design: Zigzag-Structured Intrinsically Stretchable Polymer Semiconductors. J Am Chem Soc 2024; 146:27429-27442. [PMID: 39345027 DOI: 10.1021/jacs.4c07174] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 10/01/2024]
Abstract
Orienting intelligence and multifunction, stretchable semiconductors are of great significance in constructing next-generation human-friendly wearable electronic devices. Nevertheless, rendering semiconducting polymers mechanical stretchability without compromising intrinsic electrical performance remains a major challenge. Combining geometry-innovated inorganic systems and structure-tailored organic semiconductors, a molecular-scale geometric design strategy is proposed to obtain high-performance intrinsically stretchable polymer semiconductors. Originating from the linear regioregular conjugated polymer and corresponding para-modified near-linear counterpart, a series of zigzag-structured semiconducting polymers are developed with diverse ortho-type and meta-type kinking units quantitatively incorporated. They showcase huge edges in realizing stretchability enhancement for conformational transition, likewise with long-range π-aggregation and short-range torsion disorder taking effect. Assisted by additional heteroatom embedment and flexible alkyl-chain attachment, mechanical stretchability and carrier mobility could afford a two-way promotion. Among zigzag-structured species, o-OC8-5% with the initial field-effect mobility up to 1.92 cm2 V-1 s-1 still delivers 1.43 and 1.37 cm2 V-1 s-1 under 100% strain with charge transport parallel and perpendicular to the stretching direction, respectively, accompanied by outstanding performance retention and cyclic stability. This molecular design strategy contributes to an in-depth exploration of prospective intrinsically stretchable semiconductors for cutting-edge electronic devices.
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Affiliation(s)
- Mingliang Zhu
- Beijing National Laboratory for Molecular Sciences, Organic Solids Laboratory, Institute of Chemistry, Chinese Academy of Sciences, Beijing 100190, P. R. China
- School of Chemical Science, University of Chinese Academy of Sciences, Beijing 100049, P. R. China
| | - Zhihao Shao
- Beijing National Laboratory for Molecular Sciences, Organic Solids Laboratory, Institute of Chemistry, Chinese Academy of Sciences, Beijing 100190, P. R. China
- School of Chemical Science, University of Chinese Academy of Sciences, Beijing 100049, P. R. China
| | - Yifan Li
- Beijing National Laboratory for Molecular Sciences, Organic Solids Laboratory, Institute of Chemistry, Chinese Academy of Sciences, Beijing 100190, P. R. China
- School of Chemical Science, University of Chinese Academy of Sciences, Beijing 100049, P. R. China
| | - Zihan Xiong
- Beijing National Laboratory for Molecular Sciences, Organic Solids Laboratory, Institute of Chemistry, Chinese Academy of Sciences, Beijing 100190, P. R. China
- School of Chemical Science, University of Chinese Academy of Sciences, Beijing 100049, P. R. China
| | - Zhao Yang
- Beijing National Laboratory for Molecular Sciences, Organic Solids Laboratory, Institute of Chemistry, Chinese Academy of Sciences, Beijing 100190, P. R. China
- School of Chemical Science, University of Chinese Academy of Sciences, Beijing 100049, P. R. China
| | - Jinyang Chen
- Beijing National Laboratory for Molecular Sciences, Organic Solids Laboratory, Institute of Chemistry, Chinese Academy of Sciences, Beijing 100190, P. R. China
- School of Chemical Science, University of Chinese Academy of Sciences, Beijing 100049, P. R. China
| | - Wenkang Shi
- Beijing National Laboratory for Molecular Sciences, Organic Solids Laboratory, Institute of Chemistry, Chinese Academy of Sciences, Beijing 100190, P. R. China
- School of Chemical Science, University of Chinese Academy of Sciences, Beijing 100049, P. R. China
| | - Chengyu Wang
- Beijing National Laboratory for Molecular Sciences, Organic Solids Laboratory, Institute of Chemistry, Chinese Academy of Sciences, Beijing 100190, P. R. China
- School of Chemical Science, University of Chinese Academy of Sciences, Beijing 100049, P. R. China
| | - Yangshuang Bian
- Beijing National Laboratory for Molecular Sciences, Organic Solids Laboratory, Institute of Chemistry, Chinese Academy of Sciences, Beijing 100190, P. R. China
- School of Chemical Science, University of Chinese Academy of Sciences, Beijing 100049, P. R. China
| | - Zhiyuan Zhao
- Beijing National Laboratory for Molecular Sciences, Organic Solids Laboratory, Institute of Chemistry, Chinese Academy of Sciences, Beijing 100190, P. R. China
- School of Chemical Science, University of Chinese Academy of Sciences, Beijing 100049, P. R. China
| | - Yunlong Guo
- Beijing National Laboratory for Molecular Sciences, Organic Solids Laboratory, Institute of Chemistry, Chinese Academy of Sciences, Beijing 100190, P. R. China
- School of Chemical Science, University of Chinese Academy of Sciences, Beijing 100049, P. R. China
| | - Yunqi Liu
- Beijing National Laboratory for Molecular Sciences, Organic Solids Laboratory, Institute of Chemistry, Chinese Academy of Sciences, Beijing 100190, P. R. China
- School of Chemical Science, University of Chinese Academy of Sciences, Beijing 100049, P. R. China
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8
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Zhuo Z, Ni M, Yu N, Zheng Y, Lin Y, Yang J, Sun L, Wang L, Bai L, Chen W, Xu M, Huo F, Lin J, Feng Q, Huang W. Intrinsically stretchable fully π-conjugated polymer film via fluid conjugated molecular external-plasticizing for flexible light-emitting diodes. Nat Commun 2024; 15:7990. [PMID: 39266527 PMCID: PMC11393078 DOI: 10.1038/s41467-024-50358-1] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 11/13/2023] [Accepted: 07/08/2024] [Indexed: 09/14/2024] Open
Abstract
Fully π-conjugated polymers with rigid aromatic units are promising for flexible optoelectronic devices, but their inherent brittleness poses a challenge for achieving high-performance, intrinsically stretchable fully π-conjugated polymer. Here, we are establishing an external-plasticizing strategy using semiconductor fluid plasticizers (Z1 and Z2) to enhance the optoelectronic, morphological, and stretchable properties of fully π-conjugated polymer films for flexible light-emitting diodes. The synergistic effect of hierarchical structure and optoelectronic properties of Z1 in poly(9,9-di-n-octylfluorene-alt-benzothiadiazole) (F8BT) films enable excellent stretchable deformability (~25%) and good conductivity. PLEDs based on F8BT/Z1 films show stable electroluminescence and efficiency under 15% stretch and 100 cycles at 10% strain, revealing outstanding stress tolerance. This strategy is also improving the stretchable properties of polymers like poly(9,9-di-n-octylfluorenyl-2,7-diyl) (PFO) and poly(2-methoxy-5(2'-ethyl)hexoxy-phenylenevinylene) (Super Yellow), demonstrating its general applicability. Therefore, this strategy can provide effective guidance for designing high-performance stretchable fully π-conjugated polymers films for flexible electronic devices.
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Affiliation(s)
- Zhiqiang Zhuo
- Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Nanjing Tech University (NanjingTech), Nanjing, China
| | - Mingjian Ni
- The Institute of Flexible Electronics (IFE, Future Technologies), Xiamen University, Xiamen, China
| | - Ningning Yu
- Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Nanjing Tech University (NanjingTech), Nanjing, China
| | - Yingying Zheng
- Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Nanjing Tech University (NanjingTech), Nanjing, China
| | - Yingru Lin
- Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Nanjing Tech University (NanjingTech), Nanjing, China
| | - Jing Yang
- Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Nanjing Tech University (NanjingTech), Nanjing, China
| | - Lili Sun
- School of Flexible Electronics (SoFE) & State Key Laboratory of Optoelectronic Materials and Technologies, Sun Yat-sen University, Shenzhen, China
| | - Lizhi Wang
- Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Nanjing Tech University (NanjingTech), Nanjing, China
| | - Lubing Bai
- Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Nanjing Tech University (NanjingTech), Nanjing, China
| | - Wenyu Chen
- Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Nanjing Tech University (NanjingTech), Nanjing, China
| | - Man Xu
- State Key Laboratory of Organic Electronics and Information Displays & Institute of Advanced Materials (IAM), Nanjing University of Posts & Telecommunications, Nanjing, China
| | - Fengwei Huo
- Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Nanjing Tech University (NanjingTech), Nanjing, China
| | - Jinyi Lin
- Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Nanjing Tech University (NanjingTech), Nanjing, China.
| | - Quanyou Feng
- State Key Laboratory of Organic Electronics and Information Displays & Institute of Advanced Materials (IAM), Nanjing University of Posts & Telecommunications, Nanjing, China
| | - Wei Huang
- Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Nanjing Tech University (NanjingTech), Nanjing, China.
- The Institute of Flexible Electronics (IFE, Future Technologies), Xiamen University, Xiamen, China.
- School of Flexible Electronics (SoFE) & State Key Laboratory of Optoelectronic Materials and Technologies, Sun Yat-sen University, Shenzhen, China.
- State Key Laboratory of Organic Electronics and Information Displays & Institute of Advanced Materials (IAM), Nanjing University of Posts & Telecommunications, Nanjing, China.
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9
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Ding Y, Xiong S, Sun L, Wang Y, Zhou Y, Li Y, Peng J, Fukuda K, Someya T, Liu R, Zhang X. Metal nanowire-based transparent electrode for flexible and stretchable optoelectronic devices. Chem Soc Rev 2024; 53:7784-7827. [PMID: 38953906 DOI: 10.1039/d4cs00080c] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 07/04/2024]
Abstract
High-quality transparent electrodes are indispensable components of flexible optoelectronic devices as they guarantee sufficient light transparency and electrical conductivity. Compared to commercial indium tin oxide, metal nanowires are considered ideal candidates as flexible transparent electrodes (FTEs) owing to their superior optoelectronic properties, excellent mechanical flexibility, solution treatability, and higher compatibility with semiconductors. However, certain key challenges associated with material preparation and device fabrication remain for the practical application of metal nanowire-based electrodes. In this review, we discuss state-of-the-art solution-processed metal nanowire-based FTEs and their applications in flexible and stretchable optoelectronic devices. Specifically, the important properties of FTEs and a cost-benefit analysis of existing technologies are introduced, followed by a summary of the synthesis strategy, key properties, and fabrication technologies of the nanowires. Subsequently, we explore the applications of metal-nanowire-based FTEs in different optoelectronic devices including solar cells, photodetectors, and light-emitting diodes. Finally, the current status, future challenges, and emerging strategies in this field are presented.
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Affiliation(s)
- Yu Ding
- Soochow Institute of Energy and Material Innovations, Key Laboratory for Advanced Carbon Materials and Wearable Energy Technologies of Jiangsu Province, Institute of Functional Nano and Soft Materials (FUNSOM) and College of Energy, Soochow University, Suzhou 215006, P. R. China.
| | - Sixing Xiong
- Center for Emergent Matter Science (CEMS), RIKEN, 2-1 Hirosawa, Wako, Saitama 351-0198, Japan.
| | - Lulu Sun
- Thin-Film Device Laboratory, RIKEN, 2-1 Hirosawa, Wako, Saitama 351-0198, Japan
| | - Yiying Wang
- Soochow Institute of Energy and Material Innovations, Key Laboratory for Advanced Carbon Materials and Wearable Energy Technologies of Jiangsu Province, Institute of Functional Nano and Soft Materials (FUNSOM) and College of Energy, Soochow University, Suzhou 215006, P. R. China.
- Jiangsu Key Laboratory of Advanced Negative Carbon Technologies, Soochow University, Suzhou 215006, P. R. China
| | - Yinhua Zhou
- Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan 430074, P. R. China
| | - Yaowen Li
- College of Chemistry, Soochow University, Suzhou 215123, P. R. China
| | - Jun Peng
- Soochow Institute of Energy and Material Innovations, Key Laboratory for Advanced Carbon Materials and Wearable Energy Technologies of Jiangsu Province, Institute of Functional Nano and Soft Materials (FUNSOM) and College of Energy, Soochow University, Suzhou 215006, P. R. China.
- Jiangsu Key Laboratory of Advanced Negative Carbon Technologies, Soochow University, Suzhou 215006, P. R. China
| | - Kenjiro Fukuda
- Center for Emergent Matter Science (CEMS), RIKEN, 2-1 Hirosawa, Wako, Saitama 351-0198, Japan.
- Thin-Film Device Laboratory, RIKEN, 2-1 Hirosawa, Wako, Saitama 351-0198, Japan
| | - Takao Someya
- Center for Emergent Matter Science (CEMS), RIKEN, 2-1 Hirosawa, Wako, Saitama 351-0198, Japan.
- Thin-Film Device Laboratory, RIKEN, 2-1 Hirosawa, Wako, Saitama 351-0198, Japan
- Department of Electrical Engineering and Information Systems, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan
| | - Ruiyuan Liu
- Soochow Institute of Energy and Material Innovations, Key Laboratory for Advanced Carbon Materials and Wearable Energy Technologies of Jiangsu Province, Institute of Functional Nano and Soft Materials (FUNSOM) and College of Energy, Soochow University, Suzhou 215006, P. R. China.
- Jiangsu Key Laboratory of Advanced Negative Carbon Technologies, Soochow University, Suzhou 215006, P. R. China
| | - Xiaohong Zhang
- Soochow Institute of Energy and Material Innovations, Key Laboratory for Advanced Carbon Materials and Wearable Energy Technologies of Jiangsu Province, Institute of Functional Nano and Soft Materials (FUNSOM) and College of Energy, Soochow University, Suzhou 215006, P. R. China.
- Jiangsu Key Laboratory of Advanced Negative Carbon Technologies, Soochow University, Suzhou 215006, P. R. China
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10
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Li X, Sabir A, Zhang X, Jiang H, Wang W, Zheng X, Yang H. Highly Stretchable and Oriented Wafer-Scale Semiconductor Films for Organic Phototransistor Arrays. ACS APPLIED MATERIALS & INTERFACES 2024; 16:36678-36687. [PMID: 38966894 DOI: 10.1021/acsami.4c04349] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 07/06/2024]
Abstract
Stretchable organic phototransistor arrays have potential applications in artificial visual systems due to their capacity to perceive ultraweak light across a broad spectrum. Ensuring uniform mechanical and electrical performance of individual devices within these arrays requires semiconductor films with large-area scale, well-defined orientation, and stretchability. However, the progress of stretchable phototransistors is primarily impeded by their limited electrical properties and photodetection capabilities. Herein, wafer-scale and well-oriented semiconductor films were successfully prepared using a solution shearing process. The electrical properties and photodetection capabilities were optimized by improving the polymer chain alignment. Furthermore, a stretchable 10 × 10 transistor array with high device uniformity was fabricated, demonstrating excellent mechanical robustness and photosensitive imaging ability. These arrays based on highly stretchable and well-oriented wafer-scale semiconductor films have great application potential in the field of electronic eye and artificial visual systems.
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Affiliation(s)
- Xiangxiang Li
- Key Laboratory of Organic Integrated Circuits, Ministry of Education, Tianjin Key Laboratory of Molecular Optoelectronic Sciences, Department of Chemistry, School of Science, Tianjin University, Tianjin 300072, China
| | - Ayesha Sabir
- Key Laboratory of Organic Integrated Circuits, Ministry of Education, Tianjin Key Laboratory of Molecular Optoelectronic Sciences, Department of Chemistry, School of Science, Tianjin University, Tianjin 300072, China
| | - Xiaoying Zhang
- Key Laboratory of Organic Integrated Circuits, Ministry of Education, Tianjin Key Laboratory of Molecular Optoelectronic Sciences, Department of Chemistry, School of Science, Tianjin University, Tianjin 300072, China
| | - Hongchen Jiang
- Key Laboratory of Organic Integrated Circuits, Ministry of Education, Tianjin Key Laboratory of Molecular Optoelectronic Sciences, Department of Chemistry, School of Science, Tianjin University, Tianjin 300072, China
| | - Weiyu Wang
- Key Laboratory of Organic Integrated Circuits, Ministry of Education, Tianjin Key Laboratory of Molecular Optoelectronic Sciences, Department of Chemistry, School of Science, Tianjin University, Tianjin 300072, China
| | - Xinran Zheng
- Key Laboratory of Organic Integrated Circuits, Ministry of Education, Tianjin Key Laboratory of Molecular Optoelectronic Sciences, Department of Chemistry, School of Science, Tianjin University, Tianjin 300072, China
| | - Hui Yang
- Key Laboratory of Organic Integrated Circuits, Ministry of Education, Tianjin Key Laboratory of Molecular Optoelectronic Sciences, Department of Chemistry, School of Science, Tianjin University, Tianjin 300072, China
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11
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Chen W, Yu N, Gong H, Li M, Xu W, Zhuo Z, Sun Z, Ni M, Huang W, Yang J, Lin Y, Wang L, Li H, Liang X, Sun N, Sun L, Bai L, Han Y, Tao Y, Xu M, Yin C, An X, Lin J, Huang W. Elastic-Plastic Fully π-Conjugated Polymer with Excellent Energy Dissipation Capacity for Ultra-Deep-Blue Flexible Polymer Light-Emitting Diodes with CIE y = 0.04. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2402708. [PMID: 38837440 DOI: 10.1002/adma.202402708] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/22/2024] [Revised: 05/23/2024] [Indexed: 06/07/2024]
Abstract
Emerging intrinsically flexible fully π-conjugated polymers (FπCPs) are a promising functional material for flexible optoelectronics, attributed to their potential interchain interpenetration and entanglement. However, the challenge remains in obtaining elastic-plastic FπCPs with intrinsic robust optoelectronic property and excellent long-term and cycling deformation stability simultaneously for applications in deep-blue flexible polymer light-emitting diodes (PLEDs). This study, demonstrates a series of elastic-plastic FπCPs (P1-P4) with an excellent energy dissipation capacity via side-chain internal plasticization for the ultra-deep-blue flexible PLEDs. First, the freestanding P1 film exhibited a maximum fracture strain of 34.6%. More interestingly, the elastic behavior is observed with a low strain (≤10%), and the stretched film with a high deformation (>10%) attributed to plastic processing revealed the robust capacity to realize energy absorption and release. The elastic-plastic P1 film exhibits outstanding ultra-deep-blue emission, with an efficiency of 56.38%. Subsequently, efficient PLEDs are fabricated with an ultra-deep-blue emission of CIE (0.16, 0.04) and a maximum external quantum efficiency of 1.73%. Finally, stable and efficient ultra-deep-blue electroluminescence are obtained from PLEDs based on stretchable films with different strains and cycling deformations, suggesting excellent elastic-plastic behavior and deformation stability for flexible electronics.
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Affiliation(s)
- Wenyu Chen
- Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Nanjing Tech University (NanjingTech), 30 South Puzhu Road, Nanjing, 211816, China
| | - Ningning Yu
- Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Nanjing Tech University (NanjingTech), 30 South Puzhu Road, Nanjing, 211816, China
| | - Huaqiang Gong
- Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Nanjing Tech University (NanjingTech), 30 South Puzhu Road, Nanjing, 211816, China
| | - Mengyuan Li
- Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Nanjing Tech University (NanjingTech), 30 South Puzhu Road, Nanjing, 211816, China
| | - Weifeng Xu
- Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Nanjing Tech University (NanjingTech), 30 South Puzhu Road, Nanjing, 211816, China
| | - Zhiqiang Zhuo
- Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Nanjing Tech University (NanjingTech), 30 South Puzhu Road, Nanjing, 211816, China
| | - Zhiyang Sun
- Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Nanjing Tech University (NanjingTech), 30 South Puzhu Road, Nanjing, 211816, China
| | - Mingjian Ni
- The Institute of Flexible Electronics, (IFE Future Technologies), Xiamen University(XMU), 422 Siming South Road, Xiamen, Fujian, 361005, China
| | - Wenxin Huang
- Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Nanjing Tech University (NanjingTech), 30 South Puzhu Road, Nanjing, 211816, China
| | - Jing Yang
- Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Nanjing Tech University (NanjingTech), 30 South Puzhu Road, Nanjing, 211816, China
| | - Yingru Lin
- Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Nanjing Tech University (NanjingTech), 30 South Puzhu Road, Nanjing, 211816, China
| | - Lizhi Wang
- Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Nanjing Tech University (NanjingTech), 30 South Puzhu Road, Nanjing, 211816, China
| | - Hao Li
- State Key Laboratory of Organic Electronics and Information Displays & Institute of Advanced Materials (IAM), Nanjing University of Posts & Telecommunications, 9 Wenyuan Road, Nanjing, 210023, China
| | - Xinyu Liang
- Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Nanjing Tech University (NanjingTech), 30 South Puzhu Road, Nanjing, 211816, China
| | - Ning Sun
- Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Nanjing Tech University (NanjingTech), 30 South Puzhu Road, Nanjing, 211816, China
| | - Lili Sun
- School of Flexible Electronics (SoFE) & State Key Laboratory of Optoelectronic Materials and Technologies, Sun Yat-sen University, 66 Gongchang Road, Shenzhen, 518107, China
| | - Lubing Bai
- Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Nanjing Tech University (NanjingTech), 30 South Puzhu Road, Nanjing, 211816, China
| | - Yamin Han
- Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Nanjing Tech University (NanjingTech), 30 South Puzhu Road, Nanjing, 211816, China
| | - Youtian Tao
- Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Nanjing Tech University (NanjingTech), 30 South Puzhu Road, Nanjing, 211816, China
| | - Man Xu
- State Key Laboratory of Organic Electronics and Information Displays & Institute of Advanced Materials (IAM), Nanjing University of Posts & Telecommunications, 9 Wenyuan Road, Nanjing, 210023, China
| | - Chengrong Yin
- Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Nanjing Tech University (NanjingTech), 30 South Puzhu Road, Nanjing, 211816, China
| | - Xiang An
- Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Nanjing Tech University (NanjingTech), 30 South Puzhu Road, Nanjing, 211816, China
| | - Jinyi Lin
- Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Nanjing Tech University (NanjingTech), 30 South Puzhu Road, Nanjing, 211816, China
| | - Wei Huang
- Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Nanjing Tech University (NanjingTech), 30 South Puzhu Road, Nanjing, 211816, China
- State Key Laboratory of Organic Electronics and Information Displays & Institute of Advanced Materials (IAM), Nanjing University of Posts & Telecommunications, 9 Wenyuan Road, Nanjing, 210023, China
- School of Flexible Electronics (SoFE) & State Key Laboratory of Optoelectronic Materials and Technologies, Sun Yat-sen University, 66 Gongchang Road, Shenzhen, 518107, China
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12
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Jiang N, Zhu CY, Li KX, Xu YH, Bryce MR. Recent Progress in Nonconventional Luminescent Macromolecules and their Applications. Macromolecules 2024; 57:5561-5577. [PMID: 38948183 PMCID: PMC11210344 DOI: 10.1021/acs.macromol.4c00186] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 01/26/2024] [Revised: 05/15/2024] [Accepted: 05/23/2024] [Indexed: 07/02/2024]
Abstract
Traditional π-conjugated luminescent macromolecules typically suffer from aggregation-caused quenching (ACQ) and high cytotoxicity, and they require complex synthetic processes. In contrast, nonconventional luminescent macromolecules (NCLMs) with nonconjugated structures possess excellent biocompatibility, ease of preparation, unique luminescence behavior, and emerging applications in optoelectronics, biology, and medicine. NCLMs are currently believed to produce inherent luminescence due to through-space conjugation of overlapping electron orbitals in solid/aggregate states. However, as experimental facts continue to exceed expectations or even overturn some previous assumptions, there is still controversy about the detailed luminous mechanism of NCLMs, and extensive studies are needed to further explore the mechanism. This Perspective highlights recent progress in NCLMs and classifies and summarizes these advances from the viewpoint of molecular design, mechanism exploration, applications, and challenges and prospects. The aim is to provide guidance and inspiration for the huge fundamental and practical potential of NCLMs.
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Affiliation(s)
- Nan Jiang
- Key
Laboratory of Preparation and Applications of Environmental Friendly
Materials, Key Laboratory of Functional Materials Physics and Chemistry
of the Ministry of Education, Jilin Normal
University, Changchun, 130103, China
| | - Chang-Yi Zhu
- Key
Laboratory of Preparation and Applications of Environmental Friendly
Materials, Key Laboratory of Functional Materials Physics and Chemistry
of the Ministry of Education, Jilin Normal
University, Changchun, 130103, China
| | - Ke-Xin Li
- Key
Laboratory of Preparation and Applications of Environmental Friendly
Materials, Key Laboratory of Functional Materials Physics and Chemistry
of the Ministry of Education, Jilin Normal
University, Changchun, 130103, China
| | - Yan-Hong Xu
- Key
Laboratory of Preparation and Applications of Environmental Friendly
Materials, Key Laboratory of Functional Materials Physics and Chemistry
of the Ministry of Education, Jilin Normal
University, Changchun, 130103, China
| | - Martin R. Bryce
- Department
of Chemistry, Durham University, Durham DH1 3LE, U.K.
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13
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Marwitz A, Dutta AK, Conner RL, Sanz LA, Jacobsohn LG, Knope KE. Unlocking Arene Phosphorescence in Bismuth-Organic Materials. Inorg Chem 2024; 63:11053-11062. [PMID: 38823026 PMCID: PMC11186004 DOI: 10.1021/acs.inorgchem.4c00606] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 02/09/2024] [Revised: 05/15/2024] [Accepted: 05/20/2024] [Indexed: 06/03/2024]
Abstract
Three novel bismuth-organic compounds, with the general formula [Bi2(HPDC)2(PDC)2]·(arene)·2H2O (H2PDC = 2,6-pyridinedicarboxylic acid; arene = pyrene, naphthalene, and azulene), that consist of neutral dinuclear Bi-pyridinedicarboxylate complexes and outer coordination sphere arene molecules were synthesized and structurally characterized. The structures of all three phases exhibit strong π-π stacking interactions between the Bi-bound PDC/HPDC and outer sphere organic molecules; these interactions effectively sandwich the arene molecules between bismuth complexes and thereby prevent molecular vibrations. Upon UV irradiation, the compounds containing pyrene and naphthalene displayed red and green emission, respectively, with quantum yields of 1.3(2) and 30.8(4)%. The emission was found to originate from the T1 → S0 transition of the corresponding arene and result in phosphorescence characteristic of the arene employed. By comparison, the azulene-containing compound displayed very weak blue-purple phosphorescence of unknown origin and is a rare example of T2 → S0 emission from azulene. The pyrene- and naphthalene-containing compounds both display radioluminescence, with intensities of 11 and 38% relative to bismuth germanate, respectively. Collectively, these results provide further insights into the structure-property relationships that underpin luminescence from Bi-based materials and highlight the utility of Bi-organic molecules in the realization of organic emission.
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Affiliation(s)
- Alexander
C. Marwitz
- Department
of Chemistry, Georgetown University, Washington, District of
Columbia 20057, United States of America
| | - Anuj K. Dutta
- Department
of Chemistry, Georgetown University, Washington, District of
Columbia 20057, United States of America
| | - Robin L. Conner
- Department
of Materials Science and Engineering, Clemson
University, Clemson, South Carolina 29634, United States of America
| | - Lulio A. Sanz
- Department
of Chemistry, Georgetown University, Washington, District of
Columbia 20057, United States of America
| | - Luiz G. Jacobsohn
- Department
of Materials Science and Engineering, Clemson
University, Clemson, South Carolina 29634, United States of America
| | - Karah E. Knope
- Department
of Chemistry, Georgetown University, Washington, District of
Columbia 20057, United States of America
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14
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Hou S, Chen C, Bai L, Yu J, Cheng Y, Huang W. Stretchable Electronics with Strain-Resistive Performance. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2024; 20:e2306749. [PMID: 38078789 DOI: 10.1002/smll.202306749] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/07/2023] [Revised: 10/15/2023] [Indexed: 03/16/2024]
Abstract
Stretchable electronics have attracted tremendous attention amongst academic and industrial communities due to their prospective applications in personal healthcare, human-activity monitoring, artificial skins, wearable displays, human-machine interfaces, etc. Other than mechanical robustness, stable performances under complex strains in these devices that are not for strain sensing are equally important for practical applications. Here, a comprehensive summarization of recent advances in stretchable electronics with strain-resistive performance is presented. First, detailed overviews of intrinsically strain-resistive stretchable materials, including conductors, semiconductors, and insulators, are given. Then, systematic representations of advanced structures, including helical, serpentine, meshy, wrinkled, and kirigami-based structures, for strain-resistive performance are summarized. Next, stretchable arrays and circuits with strain-resistive performance, that integrate multiple functionalities and enable complex behaviors, are introduced. This review presents a detailed overview of recent progress in stretchable electronics with strain-resistive performances and provides a guideline for the future development of stretchable electronics.
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Affiliation(s)
- Sihui Hou
- School of Automation Engineering, University of Electronic Science and Technology of China, Chengdu, 610054, China
| | - Cong Chen
- School of Automation Engineering, University of Electronic Science and Technology of China, Chengdu, 610054, China
| | - Libing Bai
- School of Automation Engineering, University of Electronic Science and Technology of China, Chengdu, 610054, China
| | - Junsheng Yu
- School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu, 610054, China
| | - Yuhua Cheng
- School of Automation Engineering, University of Electronic Science and Technology of China, Chengdu, 610054, China
| | - Wei Huang
- School of Automation Engineering, University of Electronic Science and Technology of China, Chengdu, 610054, China
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15
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Zhu M, Guo Y, Liu Y. Multifunction-oriented high-mobility polymer semiconductors. Natl Sci Rev 2024; 11:nwad253. [PMID: 38312388 PMCID: PMC10833453 DOI: 10.1093/nsr/nwad253] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 06/21/2023] [Revised: 08/11/2023] [Accepted: 09/22/2023] [Indexed: 02/06/2024] Open
Abstract
Recent progress in multifunction-oriented high-mobility polymer semiconductors is profiled, with current challenges and future directions proposed in this perspective.
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Affiliation(s)
- Mingliang Zhu
- Beijing National Laboratory for Molecular Sciences, Organic Solids Laboratory, Institute of Chemistry, Chinese Academy of Sciences, China
- School of Chemical Sciences, University of Chinese Academy of Sciences, China
| | - Yunlong Guo
- Beijing National Laboratory for Molecular Sciences, Organic Solids Laboratory, Institute of Chemistry, Chinese Academy of Sciences, China
- School of Chemical Sciences, University of Chinese Academy of Sciences, China
| | - Yunqi Liu
- Beijing National Laboratory for Molecular Sciences, Organic Solids Laboratory, Institute of Chemistry, Chinese Academy of Sciences, China
- School of Chemical Sciences, University of Chinese Academy of Sciences, China
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16
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Chang S, Koo JH, Yoo J, Kim MS, Choi MK, Kim DH, Song YM. Flexible and Stretchable Light-Emitting Diodes and Photodetectors for Human-Centric Optoelectronics. Chem Rev 2024; 124:768-859. [PMID: 38241488 DOI: 10.1021/acs.chemrev.3c00548] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/21/2024]
Abstract
Optoelectronic devices with unconventional form factors, such as flexible and stretchable light-emitting or photoresponsive devices, are core elements for the next-generation human-centric optoelectronics. For instance, these deformable devices can be utilized as closely fitted wearable sensors to acquire precise biosignals that are subsequently uploaded to the cloud for immediate examination and diagnosis, and also can be used for vision systems for human-interactive robotics. Their inception was propelled by breakthroughs in novel optoelectronic material technologies and device blueprinting methodologies, endowing flexibility and mechanical resilience to conventional rigid optoelectronic devices. This paper reviews the advancements in such soft optoelectronic device technologies, honing in on various materials, manufacturing techniques, and device design strategies. We will first highlight the general approaches for flexible and stretchable device fabrication, including the appropriate material selection for the substrate, electrodes, and insulation layers. We will then focus on the materials for flexible and stretchable light-emitting diodes, their device integration strategies, and representative application examples. Next, we will move on to the materials for flexible and stretchable photodetectors, highlighting the state-of-the-art materials and device fabrication methods, followed by their representative application examples. At the end, a brief summary will be given, and the potential challenges for further development of functional devices will be discussed as a conclusion.
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Affiliation(s)
- Sehui Chang
- School of Electrical Engineering and Computer Science, Gwangju Institute of Science and Technology (GIST), Gwangju 61005, Republic of Korea
| | - Ja Hoon Koo
- Department of Semiconductor Systems Engineering, Sejong University, Seoul 05006, Republic of Korea
- Institute of Semiconductor and System IC, Sejong University, Seoul 05006, Republic of Korea
| | - Jisu Yoo
- Department of Materials Science and Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan 44919, Republic of Korea
| | - Min Seok Kim
- School of Electrical Engineering and Computer Science, Gwangju Institute of Science and Technology (GIST), Gwangju 61005, Republic of Korea
| | - Moon Kee Choi
- Department of Materials Science and Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan 44919, Republic of Korea
- Graduate School of Semiconductor Materials and Devices Engineering, Center for Future Semiconductor Technology (FUST), UNIST, Ulsan 44919, Republic of Korea
- Center for Nanoparticle Research, Institute for Basic Science (IBS), Seoul 08826, Republic of Korea
| | - Dae-Hyeong Kim
- Center for Nanoparticle Research, Institute for Basic Science (IBS), Seoul 08826, Republic of Korea
- School of Chemical and Biological Engineering, Institute of Chemical Processes, Seoul National University (SNU), Seoul 08826, Republic of Korea
- Department of Materials Science and Engineering, SNU, Seoul 08826, Republic of Korea
- Interdisciplinary Program for Bioengineering, SNU, Seoul 08826, Republic of Korea
| | - Young Min Song
- School of Electrical Engineering and Computer Science, Gwangju Institute of Science and Technology (GIST), Gwangju 61005, Republic of Korea
- Department of Materials Science and Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan 44919, Republic of Korea
- Artificial Intelligence (AI) Graduate School, GIST, Gwangju 61005, Republic of Korea
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17
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Park H, Kim DC. Structural and Material-Based Approaches for the Fabrication of Stretchable Light-Emitting Diodes. MICROMACHINES 2023; 15:66. [PMID: 38258185 PMCID: PMC10821428 DOI: 10.3390/mi15010066] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/03/2023] [Revised: 12/22/2023] [Accepted: 12/27/2023] [Indexed: 01/24/2024]
Abstract
Stretchable displays, capable of freely transforming their shapes, have received significant attention as alternatives to conventional rigid displays, and they are anticipated to provide new opportunities in various human-friendly electronics applications. As a core component of stretchable displays, high-performance stretchable light-emitting diodes (LEDs) have recently emerged. The approaches to fabricate stretchable LEDs are broadly categorized into two groups, namely "structural" and "material-based" approaches, based on the mechanisms to tolerate strain. While structural approaches rely on specially designed geometries to dissipate applied strain, material-based approaches mainly focus on replacing conventional rigid components of LEDs to soft and stretchable materials. Here, we review the latest studies on the fabrication of stretchable LEDs, which is accomplished through these distinctive strategies. First, we introduce representative device designs for efficient strain distribution, encompassing island-bridge structures, wavy buckling, and kirigami-/origami-based structures. For the material-based approaches, we discuss the latest studies for intrinsically stretchable (is-) electronic/optoelectronic materials, including the formation of conductive nanocomposite and polymeric blending with various additives. The review also provides examples of is-LEDs, focusing on their luminous performance and stretchability. We conclude this review with a brief outlook on future technologies.
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Affiliation(s)
- Hamin Park
- Department of Electronic Engineering, Kwangwoon University, 20, Gwangun-ro, Nowon-gu, Seoul 01897, Republic of Korea
| | - Dong Chan Kim
- Department of Chemical and Biological Engineering, Gachon University, 1342 Seongnam-daero, Sujeong-gu, Seongnam-si 13120, Republic of Korea
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18
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Chen F, Li Y, Chen Y, Wang YX, Hu W. Supramolecular interface decoration on a polymer conductor for an intrinsically stretchable near-infrared photodiode. Chem Commun (Camb) 2023; 59:11975-11978. [PMID: 37724429 DOI: 10.1039/d3cc04189a] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 09/20/2023]
Abstract
Stretchable photodiodes with near-infrared (NIR) response face the challenge of material deficiency. A supramolecular cathode with excellent optical, tensile and electrical properties was proposed. Together with a stretchable organic heterojunction, we developed an intrinsically stretchable NIR photodiode with high detectivity over 1011 Jones and that remained functional under 100% strain.
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Affiliation(s)
- Fan Chen
- Tianjin Key Laboratory of Molecular Optoelectronic Sciences, Department of Chemistry, School of Science, Tianjin University and Collaborative Innovation Center of Chemical Science and Engineering, Tianjin 300072, P. R. China.
| | - Yiming Li
- Tianjin Key Laboratory of Molecular Optoelectronic Sciences, Department of Chemistry, School of Science, Tianjin University and Collaborative Innovation Center of Chemical Science and Engineering, Tianjin 300072, P. R. China.
| | - Yan Chen
- Tianjin Key Laboratory of Molecular Optoelectronic Sciences, Department of Chemistry, School of Science, Tianjin University and Collaborative Innovation Center of Chemical Science and Engineering, Tianjin 300072, P. R. China.
| | - Yi-Xuan Wang
- Tianjin Key Laboratory of Molecular Optoelectronic Sciences, Department of Chemistry, School of Science, Tianjin University and Collaborative Innovation Center of Chemical Science and Engineering, Tianjin 300072, P. R. China.
- Haihe Laboratory of Sustainable Chemical Transformations, Tianjin 300192, P. R. China
| | - Wenping Hu
- Tianjin Key Laboratory of Molecular Optoelectronic Sciences, Department of Chemistry, School of Science, Tianjin University and Collaborative Innovation Center of Chemical Science and Engineering, Tianjin 300072, P. R. China.
- Haihe Laboratory of Sustainable Chemical Transformations, Tianjin 300192, P. R. China
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19
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Zhuo Z, Ni M, An X, Bai L, Liang X, Yang J, Zheng Y, Liu B, Sun N, Sun L, Wei C, Yu N, Chen W, Li M, Xu M, Lin J, Huang W. Intrinsically Stretchable and Efficient Fully Π-Conjugated Polymer via Internal Plasticization for Flexible Deep-Blue Polymer Light-Emitting Diodes with CIE y = 0.08. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023; 35:e2303923. [PMID: 37435996 DOI: 10.1002/adma.202303923] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/27/2023] [Revised: 06/20/2023] [Accepted: 06/29/2023] [Indexed: 07/13/2023]
Abstract
Intrinsically stretchable polymeric semiconductors are essential to flexible polymer light-emitting diodes (PLEDs) owing to their excellent strain tolerance capacity under long-time deformation operation. Obtaining intrinsic stretchability, robust emission properties, and excellent charge-transport behavior simultaneously from fully π-conjugated polymers (FCPs) is difficult, particularly for applications in deep-blue PLEDs. Herein, an internal plasticization strategy is proposed to introduce a phenyl-ester plasticizer into polyfluorenes (PF-MC4, PF-MC6, and PF-MC8) for narrowband deep-blue flexible PLEDs. Compared with controlled poly[4-(octyloxy)-9,9-diphenylfluoren-2,7-diyl]-co-[5-(octyloxy)-9,9-diphenylfluoren-2,7-diyl] (PODPFs) (2.5%), the freestanding PF-MC8 thin film shows a fracture strain of >25%. The three stretchable films exhibit stable and efficient deep-blue emission (PLQY > 50%) because of the encapsulation of π-conjugated backbone via pendant phenyl-ester plasticizers. The PF-MC8-based PLEDs show deep-blue emission, which corresponds to CIE and EQE values of (0.16, 0.10) and 1.06%, respectively. Finally, the narrowband deep-blue electroluminescence (FWHM of ≈25 nm; CIE coordinates: (0.15, 0.08)) and performance of the transferred PLEDs based on the PF-MC8 stretchable film are independent of the tensile ratio (up to 45%); however, they show a maximum brightness of 1976 cd m-2 at a ratio of 35%. Therefore, internal plasticization is a promising approach for designing intrinsically stretchable FCPs for flexible electronics.
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Affiliation(s)
- Zhiqiang Zhuo
- Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Nanjing Tech University (NanjingTech), 30 South Puzhu Road, Nanjing, 211816, China
| | - Mingjian Ni
- Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Nanjing Tech University (NanjingTech), 30 South Puzhu Road, Nanjing, 211816, China
| | - Xiang An
- Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Nanjing Tech University (NanjingTech), 30 South Puzhu Road, Nanjing, 211816, China
| | - Lubing Bai
- Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Nanjing Tech University (NanjingTech), 30 South Puzhu Road, Nanjing, 211816, China
| | - Xinyu Liang
- Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Nanjing Tech University (NanjingTech), 30 South Puzhu Road, Nanjing, 211816, China
| | - Jing Yang
- Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Nanjing Tech University (NanjingTech), 30 South Puzhu Road, Nanjing, 211816, China
| | - Yingying Zheng
- Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Nanjing Tech University (NanjingTech), 30 South Puzhu Road, Nanjing, 211816, China
| | - Bin Liu
- Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Nanjing Tech University (NanjingTech), 30 South Puzhu Road, Nanjing, 211816, China
| | - Ning Sun
- Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Nanjing Tech University (NanjingTech), 30 South Puzhu Road, Nanjing, 211816, China
| | - Lili Sun
- Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Nanjing Tech University (NanjingTech), 30 South Puzhu Road, Nanjing, 211816, China
| | - Chuanxin Wei
- State Key Laboratory of Organic Electronics and Information Displays & Institute of Advanced Materials (IAM), Nanjing University of Posts & Telecommunications, 9 Wenyuan Road, Nanjing, 210023, China
| | - Ningning Yu
- Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Nanjing Tech University (NanjingTech), 30 South Puzhu Road, Nanjing, 211816, China
| | - Wenyu Chen
- Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Nanjing Tech University (NanjingTech), 30 South Puzhu Road, Nanjing, 211816, China
| | - Mengyuan Li
- Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Nanjing Tech University (NanjingTech), 30 South Puzhu Road, Nanjing, 211816, China
| | - Man Xu
- State Key Laboratory of Organic Electronics and Information Displays & Institute of Advanced Materials (IAM), Nanjing University of Posts & Telecommunications, 9 Wenyuan Road, Nanjing, 210023, China
| | - Jinyi Lin
- Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Nanjing Tech University (NanjingTech), 30 South Puzhu Road, Nanjing, 211816, China
| | - Wei Huang
- Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Nanjing Tech University (NanjingTech), 30 South Puzhu Road, Nanjing, 211816, China
- State Key Laboratory of Organic Electronics and Information Displays & Institute of Advanced Materials (IAM), Nanjing University of Posts & Telecommunications, 9 Wenyuan Road, Nanjing, 210023, China
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20
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Jeong MW, Ma JH, Shin JS, Kim JS, Ma G, Nam TU, Gu X, Kang SJ, Oh JY. Intrinsically stretchable three primary light-emitting films enabled by elastomer blend for polymer light-emitting diodes. SCIENCE ADVANCES 2023; 9:eadh1504. [PMID: 37343088 DOI: 10.1126/sciadv.adh1504] [Citation(s) in RCA: 5] [Impact Index Per Article: 2.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/13/2023] [Accepted: 05/18/2023] [Indexed: 06/23/2023]
Abstract
Intrinsically stretchable light-emitting materials are crucial for skin-like wearable displays; however, their color range has been limited to green-like yellow lights owing to the restricted stretchable light-emitting materials (super yellow series materials). To develop skin-like full-color displays, three intrinsically stretchable primary light-emitting materials [red, green, and blue (RGB)] are essential. In this study, we report three highly stretchable primary light-emitting films made from a polymer blend of conventional RGB light-emitting polymers and a nonpolar elastomer. The blend films consist of multidimensional nanodomains of light-emitting polymers that are interconnected in an elastomer matrix for efficient light-emitting under strain. The RGB blend films exhibited over 1000 cd/m2 luminance with low turn-on voltage (<5 Von) and the selectively stretched blend films on rigid substrate maintained stable light-emitting performance up to 100% strain even after 1000 multiple stretching cycles.
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Affiliation(s)
- Min Woo Jeong
- Department of Chemical Engineering (Integrated Engineering Program), Kyung Hee University, Yongin, Gyeonggi, 17104, Korea
| | - Jin Hyun Ma
- Department of Advanced Materials Engineering for Information and Electronics, Kyung Hee University, Yongin, Gyeonggi, 17104, Korea
- Integrated Education Institute for Frontier Science and Technology (BK21 Four), Kyung Hee University, Yongin, Gyeonggi, 17104, Korea
| | - Jae Seung Shin
- Department of Advanced Materials Engineering for Information and Electronics, Kyung Hee University, Yongin, Gyeonggi, 17104, Korea
- Integrated Education Institute for Frontier Science and Technology (BK21 Four), Kyung Hee University, Yongin, Gyeonggi, 17104, Korea
| | - Jun Su Kim
- Department of Chemical Engineering (Integrated Engineering Program), Kyung Hee University, Yongin, Gyeonggi, 17104, Korea
| | - Guorong Ma
- School of Polymer Science and Engineering, University of Southern Mississippi, Hattiesburg, MS 39406, USA
| | - Tae Uk Nam
- Department of Chemical Engineering (Integrated Engineering Program), Kyung Hee University, Yongin, Gyeonggi, 17104, Korea
| | - Xiaodan Gu
- School of Polymer Science and Engineering, University of Southern Mississippi, Hattiesburg, MS 39406, USA
| | - Seong Jun Kang
- Department of Advanced Materials Engineering for Information and Electronics, Kyung Hee University, Yongin, Gyeonggi, 17104, Korea
- Integrated Education Institute for Frontier Science and Technology (BK21 Four), Kyung Hee University, Yongin, Gyeonggi, 17104, Korea
| | - Jin Young Oh
- Department of Chemical Engineering (Integrated Engineering Program), Kyung Hee University, Yongin, Gyeonggi, 17104, Korea
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21
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Li XC, Yao L, Song W, Liu F, Wang Q, Chen J, Xue Q, Lai WY. Intrinsically Stretchable Electroluminescent Elastomers with Self-Confinement Effect for Highly Efficient Non-Blended Stretchable OLEDs. Angew Chem Int Ed Engl 2023; 62:e202213749. [PMID: 36350657 DOI: 10.1002/anie.202213749] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 09/18/2022] [Indexed: 11/11/2022]
Abstract
Ultra-flexible stretchable organic light-emitting diodes (OLEDs) are emerging as a basic component of flexible electronics and human-machine interfaces. However, the brightness and efficiency of stretchable OLEDs remain still far inferior to their rigid counterparts, owing to the scarcity of satisfactory stretchable electroluminescent materials. Herein, we explore a general concept based on the self-confinement effect to dramatically improve the stretchability of elastomers, without affecting electroluminescent properties. The balanced rigid/flexible chain dynamics under self-confinement significantly reduces the modulus of the elastomers, resulting in the maximum strain reaching 806 %. Ultra-flexible stretchable OLEDs have been constructed based on the resulting ISEEs, achieving unprecedented high-performance non-blended stretchable OLEDs. The results suggest an effective molecular design strategy for highly deformable stretchable displays and flexible electronics.
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Affiliation(s)
- Xiang-Chun Li
- State Key Laboratory of Organic Electronics and Information Displays (SKLOEID), Institute of Advanced Materials (IAM), Nanjing University of Posts & Telecommunications, 9 Wenyuan Road, Nanjing, 210023, China
| | - Lanqian Yao
- State Key Laboratory of Organic Electronics and Information Displays (SKLOEID), Institute of Advanced Materials (IAM), Nanjing University of Posts & Telecommunications, 9 Wenyuan Road, Nanjing, 210023, China
| | - Wan Song
- State Key Laboratory of Organic Electronics and Information Displays (SKLOEID), Institute of Advanced Materials (IAM), Nanjing University of Posts & Telecommunications, 9 Wenyuan Road, Nanjing, 210023, China
| | - Fang Liu
- State Key Laboratory of Organic Electronics and Information Displays (SKLOEID), Institute of Advanced Materials (IAM), Nanjing University of Posts & Telecommunications, 9 Wenyuan Road, Nanjing, 210023, China
| | - Qian Wang
- State Key Laboratory of Organic Electronics and Information Displays (SKLOEID), Institute of Advanced Materials (IAM), Nanjing University of Posts & Telecommunications, 9 Wenyuan Road, Nanjing, 210023, China
| | - Jin Chen
- State Key Laboratory of Organic Electronics and Information Displays (SKLOEID), Institute of Advanced Materials (IAM), Nanjing University of Posts & Telecommunications, 9 Wenyuan Road, Nanjing, 210023, China
| | - Qian Xue
- State Key Laboratory of Organic Electronics and Information Displays (SKLOEID), Institute of Advanced Materials (IAM), Nanjing University of Posts & Telecommunications, 9 Wenyuan Road, Nanjing, 210023, China
| | - Wen-Yong Lai
- State Key Laboratory of Organic Electronics and Information Displays (SKLOEID), Institute of Advanced Materials (IAM), Nanjing University of Posts & Telecommunications, 9 Wenyuan Road, Nanjing, 210023, China.,Frontiers Science Center for Flexible Electronics (FSCFE), MIIT Key Laboratory of Flexible Electronics (KLoFE), Northwestern Polytechnical University, Xi'an, 710072, China
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22
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Kweon H, Choi KY, Park HW, Lee R, Jeong U, Kim MJ, Hong H, Ha B, Lee S, Kwon JY, Chung KB, Kang MS, Lee H, Kim DH. Silicone engineered anisotropic lithography for ultrahigh-density OLEDs. Nat Commun 2022; 13:6775. [PMID: 36509734 PMCID: PMC9744739 DOI: 10.1038/s41467-022-34531-y] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 08/13/2022] [Accepted: 10/27/2022] [Indexed: 12/14/2022] Open
Abstract
Ultrahigh-resolution patterning with high-throughput and high-fidelity is highly in demand for expanding the potential of organic light-emitting diodes (OLEDs) from mobile and TV displays into near-to-eye microdisplays. However, current patterning techniques so far suffer from low resolution, consecutive pattern for RGB pixelation, low pattern fidelity, and throughput issue. Here, we present a silicone engineered anisotropic lithography of the organic light-emitting semiconductor (OLES) that in-situ forms a non-volatile etch-blocking layer during reactive ion etching. This unique feature not only slows the etch rate but also enhances the anisotropy of etch direction, leading to gain delicate control in forming ultrahigh-density multicolor OLES patterns (up to 4500 pixels per inch) through photolithography. This patterning strategy inspired by silicon etching chemistry is expected to provide new insights into ultrahigh-density OLED microdisplays.
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Affiliation(s)
- Hyukmin Kweon
- grid.49606.3d0000 0001 1364 9317Department of Chemical Engineering, Hanyang University, Seoul, 04763 Republic of Korea
| | - Keun-Yeong Choi
- grid.263765.30000 0004 0533 3568School of Information Communication Convergence Technology, Soongsil University, Seoul, 06978 Republic of Korea
| | - Han Wool Park
- grid.49606.3d0000 0001 1364 9317Department of Chemical Engineering, Hanyang University, Seoul, 04763 Republic of Korea
| | - Ryungyu Lee
- grid.263765.30000 0004 0533 3568School of Information Communication Convergence Technology, Soongsil University, Seoul, 06978 Republic of Korea
| | - Ukjin Jeong
- grid.49606.3d0000 0001 1364 9317Department of Chemical Engineering, Hanyang University, Seoul, 04763 Republic of Korea
| | - Min Jung Kim
- grid.255168.d0000 0001 0671 5021Division of Physics and Semiconductor Science, Dongguk University, Seoul, 04620 Republic of Korea
| | - Hyunmin Hong
- grid.255168.d0000 0001 0671 5021Division of Physics and Semiconductor Science, Dongguk University, Seoul, 04620 Republic of Korea
| | - Borina Ha
- grid.49606.3d0000 0001 1364 9317Department of Chemical Engineering, Hanyang University, Seoul, 04763 Republic of Korea
| | - Sein Lee
- grid.15444.300000 0004 0470 5454School of Integrated Technology, Yonsei University, Incheon, 21983 Republic of Korea
| | - Jang-Yeon Kwon
- grid.15444.300000 0004 0470 5454School of Integrated Technology, Yonsei University, Incheon, 21983 Republic of Korea
| | - Kwun-Bum Chung
- grid.255168.d0000 0001 0671 5021Division of Physics and Semiconductor Science, Dongguk University, Seoul, 04620 Republic of Korea
| | - Moon Sung Kang
- grid.263736.50000 0001 0286 5954Department of Chemical and Biomolecular Engineering, Sogang University, Seoul, 04107 Republic of Korea ,grid.263736.50000 0001 0286 5954Institute of Emergent Materials, Sogang University, Seoul, 04107 Republic of Korea
| | - Hojin Lee
- grid.263765.30000 0004 0533 3568School of Information Communication Convergence Technology, Soongsil University, Seoul, 06978 Republic of Korea ,grid.263765.30000 0004 0533 3568School of Electronic Engineering, Soongsil University, Seoul, 06978 Republic of Korea
| | - Do Hwan Kim
- grid.49606.3d0000 0001 1364 9317Department of Chemical Engineering, Hanyang University, Seoul, 04763 Republic of Korea ,grid.49606.3d0000 0001 1364 9317Institute of Nano Science and Technology, Hanyang University, Seoul, 04763 Republic of Korea
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