Revisiting the Nature of Chemical Bonding in Chalcogenides to Explain and Design their Properties

Effects of Compression on the Local Iodine Environment in Dipotassium Zinc Tetraiodate(V) Dihydrate K2Zn(IO3)4·2H2O

Combining X-ray diffraction with density-functional theory and electron topology calculations, we found that pressure substantially modifies the bonding in K2Zn(IO3)4·2H2O. We discovered that under compression, there is a progressive change from primary covalent I-O bonds and secondary halogen I···O interactions toward O-I-O electron-deficient multicenter bonds. Because of this, iodine hypercoordination converts IO3 trigonal pyramids toward IO6 units. The formation of these IO6 units breaks the typical isolation of iodate molecules, forming an infinite two-dimensional iodate network. Hypercoordination influences the hydrogen atoms too, such that multicenter O-H-O bonds are also promoted with increasing pressure. We have determined that K2Zn(IO3)4·2H2O is one of the most compressible iodates studied to date, with a bulk modulus of 22(3) GPa. The pressure-induced structural changes strongly modify the electronic structure as shown by optical-absorption measurements and band-structure calculations. The band gap energy closes from 4.2(1) eV at ambient pressure to 3.4(1) eV at 20 GPa.

Infrared beam-shaping on demand via tailored geometric phase metasurfaces employing the plasmonic phase-change material In3SbTe2

Conventional optical elements are bulky and limited to specific functionalities, contradicting the increasing demand of miniaturization and multi-functionalities. Optical metasurfaces enable tailoring light-matter interaction at will, especially important for the infrared spectral range which lacks commercially available beam-shaping elements. While the fabrication of those metasurfaces usually requires cumbersome techniques, direct laser writing promises a simple and convenient alternative. Here, we exploit the non-volatile laser-induced insulator-to-metal transition of the plasmonic phase-change material In3SbTe2 (IST) for optical programming of large-area metasurfaces for infrared beam-shaping. We tailor the geometric phase of metasurfaces with rotated crystalline IST rod antennas to achieve beam steering, lensing, and beams carrying orbital angular momenta. Finally, we investigate multi-functional and cascaded metasurfaces exploiting enlarged holography, and design a single metasurface creating two different holograms along the optical axis. Our approach facilitates fabrication of large-area metasurfaces within hours, enabling rapid-prototyping of customized infrared meta-optics for sensing, imaging and quantum information.

Exploiting chemical bonding principles to design high-performance thermoelectric materials

Thermoelectric materials offer unique opportunities to convert otherwise wasted thermal energy into useful electrical energy. Many of the traditional thermoelectric materials, such as bismuth telluride and lead telluride, contain scarce and toxic elements. This has motivated the search for new high-performance materials containing readily-available and environmentally-less-damaging elements. Numerous advances in the development of high-performance thermoelectric materials exploit fundamental chemical-bonding principles. Much of the thermoelectric literature lies at the interface of chemistry, physics and materials science. In this Review, progress in the design of high-performance materials is discussed in terms of ideas that are familiar in chemistry. This includes the influence of concepts such as bonding heterogeneity, covalency, polarizability, lone pairs and different bonding models, including multi-centre, metallic and iono-covalent archetypes. In this way, we seek to present aspects of this diverse field of research in terms that are accessible to the chemistry community.

Nonmelting Disordering Facilitated by Electron Delocalization

Disordering atomic structures offers a functionality hardly expected in ordered states, including phase-change memory and photonic computing, offering the potential to renovate von Neumann architecture for neuromorphic engineering with low latency. However, significant energy consumption during the disordering compromises the data reliability and integration efficiency, which is traditionally regarded to take place after melting. Here, we investigate time for disordering in isochronal and isochoric manners, challenging the conventional melt-quenching theory. The disordering times of pure Sb, Ag-In-Sb-Te, and In surpass that of InSb by over 50 times, despite a higher melting point and a lower laser absorption rate of Sb compared to InSb. This nontrivial contrast is elucidated by theoretical calculation that delocalized electrons enable flexible modification of bond lengths even below the melting points where undermined bond directionality provides room for atoms to depart from their original positions. Facilitated by delocalized electrons, specifically through metavalent and metallic bonding rather than covalent bonding, atoms can be disordered without undergoing melting, which aligns with the rapid disordering of Sb compared to that of InSb. The results bridge the unaddressed gap between chemical interaction and kinetic behaviors during the disordering and suggest design rules highlighting electron-delocalization rather than solely relying on melting points to improve energy efficiency.

In Situ Slow-Release Hydrogen Sulfide Therapeutics for Advanced Disease Treatments

Hydrogen sulfide (H2S) gas therapygarners significant attention for its potential to improve outcomes in various disease treatments. The quantitative control of H2S release is crucial for effective the rapeutic interventions; however, traditional researchon H2S therapy frequently utilizes static release models and neglects the dynamic nature of blood flow. In this study, we propose a novel slow-release in-situ H2S release model that leverages the dynamic hydrolysis of H2S donorswithin the bloodstream. Calcium sulfide nanoparticles (CaS NPs) withmicrosolubility characteristics exhibit continuous H2S release, surpassing 24 h at normal blood flow velocities. The extended-release profile demonstrates superior potential in aligning with the bell-shapedpharmacological effect of H2S, compared to NaHS. Moreover, we synthesisedrare earth-doped CaS NPs (CaS: Eu2+, Sm3+ NPs) tha texhibit persistent luminescence, enabling visualisation of the continuous H2S release in trials. Our results demonstrate that lowdose CaS: Eu2+, Sm3+ NPs significantly reduces seizureduration to 1.2 ± 0.7 minutes, while high dose effectively suppresses colontumor growth with a tumor inhibition rate of 54%. Remarkably, these findings closely resemble endogenous H2S levels in treating epilepsy and tumors. This innovative slow-release, in-situ H2S the rapeutic approach via hydrolysis rejuvenates the development of H2S-basedtherapeutics.

The Photoinduced Response of Antimony from Femtoseconds to Minutes

As a phase change material (PCM), antimony exhibits a set of desirable properties that make it an interesting candidate for photonic memory applications. These include a large optical contrast between crystalline and amorphous solid states over a wide wavelength range. Switching between the states is possible on nanosecond timescales by applying short heating pulses. The glass state is reached through melting and rapid quenching through a supercooled liquid regime. While initial and final states are easily characterized, little is known about the optical properties on the path to forming a glass. Here we resolve the entire switching cycle of antimony with femtosecond resolution in stroboscopic optical pump-probe measurements and combine the experimental results with ab-initio molecular dynamics simulations. The glass formation process of antimony is revealed to be a complex multi-step process, where the intermediate transient states exhibit distinct optical properties with even larger contrasts than those observed between crystal and glass. The provided quantitative understanding forms the basis for exploitation in high bandwidth photonic applications.

Ab initio investigation of layered TMGeTe3 alloys for phase-change applications

Chalcogenide phase-change materials (PCMs) are among the most mature candidates for next-generation memory technology. Recently, CrGeTe3 (CrGT) emerged as a promising PCM due to its enhanced amorphous stability and fast crystallization for embedded memory applications. The amorphous stability of CrGT was attributed to the complex layered structure of the crystalline motifs needed to initiate crystallization. A subsequent computational screening work identified several similar compounds with good thermal stability, such as InGeTe3, CrSiTe3 and BiSiTe3. Here, we explored the substitution of Cr in CrGT with other 3d metals and predicted four additional layered alloys to be dynamically stable, namely ScGeTe3, TiGeTe3, ZnGeTe3 and MnGeTe3. Thorough ab initio simulations performed on both crystalline and amorphous models of these materials indicate the former three alloys to be potential PCMs with sizable resistance contrast. Furthermore, we found that crystalline MnGeTe3 exhibits ferromagnetic behavior, whereas the amorphous state probably forms a spin glass phase. This makes MnGeTe3 a promising candidate for magnetic phase-change applications.

Thermally Assisted Atomic-Scale Intermixing and Ordering in GeTe-Sb2Te3 Superlattices

Interfacial phase change memory (iPCM) devices have been shown to switch with significantly reduced power consumption, compared with conventional phase-change memory devices. These iPCMs are based on a periodic structure of nanometer-sized layers of chalcogenides called a chalcogenide superlattice (CSL). Strong temperature increases have been observed within the CSL during the switching procedure, questioning the stability of the CSL structure. In this study, we conduct a detailed quantitative analysis to investigate the evolution of the structure and composition of the sputter-deposited GeTe-Sb2Te3 CSL upon a temperature increase using atom probe tomography. We find that GeTe-Sb2Te3 CSLs already feature significant interdiffusion during the synthesis, with a considerable fraction of Sb found in GeTe and Ge in Sb2Te3. Upon heating the atoms rearrange considerably and form layers of stable Ge2Sb2Te5 and Ge3Sb2Te6 phases, which can be described as a layered solid of GeTe and Sb2Te3 blocks, i.e., Ge2Sb2Te5 = 2 × GeTe + Sb2Te3, while Ge3Sb2Te6 = 3 × GeTe + Sb2Te3. Moreover, these layered solids form in such a way as to preserve and maximize the number of van der Waals (vdW)-like contacts. Interestingly, our electrothermal simulations indicate that the transformation of the original CSL structure into layered stacks of Ge2Sb2Te5 and Ge3Sb2Te6 will have a beneficial effect on device performance. Finally, we discuss the mechanism behind the interdiffusion and phase formation and its implications for iPCM devices. In doing so, the applicability of atom probe tomography to directly investigate intermixing and phase formation on the nanoscale in phase change and related memory devices is demonstrated.

Real-space imaging of confined infrared surface plasmon polaritons on doped semiconductors covered with phase-change materials

Surface plasmon polaritons (SPPs) describe the excitation of photons coupled with free charge carriers at the interface of metals (visible) or doped semiconductors (infrared). While SPPs in the mid-infrared spectral range have been demonstrated in 2D materials such as graphene, their short propagation length combined with weak confinement in bulk materials has prevented real-space imaging of those SPPs. Here, we demonstrate real-space imaging of propagating SPPs on the doped semiconductors CdO and InAs with tunable plasma frequencies in the infrared via scattering-type scanning near-field optical microscopy. Adding a thin film of phase-change materials (PCMs) to these doped semiconductors increases the polariton confinement, leading to simplified SPP imaging and SPP resonator fabrication. We investigate optically written circular resonators of the plasmonic PCM In3SbTe2 on CdO with near-field spectroscopy and Fabry-Perot resonators of the dielectric PCM Ge3Sb2Te6 on InAs with far-field spectroscopy. Our work enables rapid prototyping of reconfigurable SPP resonators in mid-infrared.

Bond Confinement-Dependent Peierls Distortion in Epitaxially Grown Bismuth Films

A systematic study of the impact of film thickness on the properties of thin Bi films is presented. To this end, epitaxial films of high quality have been grown on a Si (111) substrate with thicknesses ranging from 1.9 to 29.9 nm. Broadband optical spectroscopy reveals a notable decline in the optical dielectric constant and the absorption peak height as the film thickness decreases, alongside a shift of the absorption maximum to higher photon energies. Raman and pump-probe spectroscopy show that the phonon mode frequencies increase upon decreasing film thickness, with the in-plane mode frequency rising by 10% from the thickest to the thinnest sample. The X-ray diffraction analysis reveals an increasing Peierls distortion for thinner films, explaining the observed property changes. Quantum chemical bonding analysis and density functional theory calculations show that the properties of thin bismuth are influenced by the interplay between electron localization and delocalization, characteristic of metavalently bonded solids. This study shows that for solids that utilize metavalent bonding, a thickness reduction leads to significant property changes. The effect can even be employed to tailor material properties without the need to change material stoichiometry.

Exploring the correlation between chemical bonding and structural distortions in TbCu0.33Te2

The design of solid-state materials requests a thorough understanding of the structural preferences among plausible structure models. Since the bond energy contributes to the formation energy of a given structure model, it also is decisive to determine the nature of chemical bonding for a given material. In this context, we were motivated to explore the correlation between chemical bonding and structural distortions within the low-dimensional tellurium fragments in TbCu0.33Te2. The ternary telluride was obtained from high-temperature solid-state reactions, while structure determinations based on x-ray diffraction experiments did not point to the presence of any structural distortion above 100 K. However, the results of first-principles-based computations indicate that a potential structural distortion within the low-dimensional tellurium fragments also correlates to an optimization of overall bonding.

The properties of solids: 'If you want to understand function, study structure'

The importance of the structure-function relationship in molecular biology was confirmed dramatically by the recent award of the 2024 Nobel Prize in Chemistry 'for computational protein design' and 'for protein structure prediction'. The relationship is also important in chemistry and condensed matter physics, and we survey here structural concepts that have been developed over the past century, particularly in chemistry. As an example we take structural phase transitions in phase-change materials (PCM), which can be switched rapidly and reversibly between amorphous and crystalline states. Alloys of Ge, Sb, and Te are the materials of choice for PCM optical memory; they satisfy practical demands of stability and rapid crystallization, which results in metastable, rock salt structures, not the most stable (layered) crystalline forms.

Sc-doped GeTe thin films prepared by radio-frequency magnetron sputtering

Radio frequency magnetron co-sputtering method employing GeTe and Sc targets was exploited for the deposition of Sc doped GeTe thin films. Different characterization techniques (scanning electron microscopy with energy-dispersive X-ray analysis, X-ray diffraction, atomic force microscopy, sheet resistance temperature-dependent measurements, variable angle spectroscopic ellipsometry, and laser ablation time-of-flight mass spectrometry) were used to evaluate the properties of as-deposited (amorphous) and annealed (crystalline) Ge-Te-Sc thin films. Prepared amorphous thin films have Ge48Te52, Ge46Te50Sc4, Ge44Te48Sc8, Ge43Te47Sc10 and Ge41Te45Sc14 chemical composition. The crystallization temperatures were found in the region of ~ 153-272 °C and they increase with scandium content. Upon amorphous-crystalline material phase change, large changes in sheet resistance were measured, with electrical contrast in terms of sheet resistance ratio Rannealed/Ras-deposited in the range of 1.37.10-4 - 9.1.10-7. Simultaneously, huge variations of optical functions were found as demonstrated by absolute values of optical contrast values (at 405 nm) in the range of |Δn|+|Δk| = 1.88-3.75 reaching maximum for layer containing 8 at% of Sc.

What Can Chemical Bonding Tell Us about Photoinduced Phase Transition Reactions in Inorganic Semiconductors? Insight from Bismuth-Antimony Selenide

Photoreactive self-healing semiconductors with suitable bandgaps for solar energy conversion offer an intriguing path to making resilient and low-cost photovoltaic devices through the introduction of a self-recovery path. However, only a few inorganic photovoltaic materials have such quality, and the underlying chemical properties that enable it are unknown, which poses a significant limit to our ability to study and discover new self-healing semiconductors. Recently, we have found that antimony trichalcogenide (Sb2Se3 and Sb2S3) and chalcohalides (e.g., SbSeI) can undergo a reversible photoinduced phase transition (PIPT) in which the structure is restored after photoinduced damage incurs to the materials. This group of materials offer a unique opportunity for studying PIPT and its limits. In particular, this group of materials facilitate the study of functional permutation to specific crystalline sites and to finding the limits of PIPT occurrence, which sheds light on the origin of the PIPT and self-recovery of this class of materials. Using Raman spectroscopy of thin films, and following signature vibrations of transition species, we have found that the PIPT magnitude decays upon gradual BiSb(1) substitution in a Sb2-xBixSe3 homologous series, until nearly one in five Sb ions is substituted with Bi. Then, the PIPT diminishes completely. The homologous series occurs along a transition from covalent to metavalent chemical bonding. By expanding our search, we find that a correlation between bonding type and photoreactivity does exist but conclude that it is an insufficient condition. Instead, we suggest, based on bond order and additional DFT calculations, that sufficient bonding states at the bottom of the conduction band are also required. This joint experimental and computational study pushes the limits of designing self-healing inorganic semiconductors for various applications and provides tools for further expansion.

Interplay between metavalent bonds and dopant orbitals enables the design of SnTe thermoelectrics

Engineering the electronic band structures upon doping is crucial to improve the thermoelectric performance of materials. Understanding how dopants influence the electronic states near the Fermi level is thus a prerequisite to precisely tune band structures. Here, we demonstrate that the Sn-s states in SnTe contribute to the density of states at the top of the valence band. This is a consequence of the half-filled p-p σ-bond (metavalent bonding) and its resulting symmetry of the orbital phases at the valence band maximum (L point of the Brillouin zone). This insight provides a recipe for identifying superior dopants. The overlap between the dopant s- and the Te p-state is maximized, if the spatial overlap of both orbitals is maximized and their energetic difference is minimized. This simple design rule has enabled us to screen out Al as a very efficient dopant to enhance the local density of states for SnTe. In conjunction with doping Sb to tune the carrier concentration and alloying with AgBiTe2 to promote band convergence, as well as introducing dislocations to impede phonon propagation, a record-high average ZT of 1.15 between 300 and 873 K and a large ZT of 0.36 at 300 K is achieved in Sn0.8Al0.08Sb0.15Te-4%AgBiTe2.

Doping strategy in metavalently bonded materials for advancing thermoelectric performance

Metavalent bonding is a unique bonding mechanism responsible for exceptional properties of materials used in thermoelectric, phase-change, and optoelectronic devices. For thermoelectrics, the desired performance of metavalently bonded materials can be tuned by doping foreign atoms. Incorporating dopants to form solid solutions or second phases is a crucial route to tailor the charge and phonon transport. Yet, it is difficult to predict if dopants will form a secondary phase or a solid solution, which hinders the tailoring of microstructures and material properties. Here, we propose that the solid solution is more easily formed between metavalently bonded solids, while precipitates prefer to exist in systems mixed by metavalently bonded and other bonding mechanisms. We demonstrate this in a metavalently bonded GeTe compound alloyed with different sulfides. We find that S can dissolve in the GeTe matrix when alloyed with metavalently bonded PbS. In contrast, S-rich second phases are omnipresent via alloying with covalently bonded GeS and SnS. Benefiting from the reduced phonon propagation and the optimized electrical transport properties upon doping PbS in GeTe, a high figure-of-merit ZT of 2.2 at 773 K in (Ge0.84Sb0.06Te0.9)(PbSe)0.05(PbS)0.05 is realized. This strategy can be applied to other metavalently bonded materials to design properties beyond thermoelectrics.

Three-Supercenter Two-Electron Bonds in C16H10: Two-Dimensional Analogue of Halogen-Bridge Bonding

Three-center two-electron bridging bonding plays a vital role in rationalizing structures and stabilities of certain molecules. Herein, the π electron rule of pyrene (C16H10) was unraveled based on a newly proposed two-dimensional (2D) superatomic-molecule theory, where the superatomic sextet rule was regarded as a π electron counting target. C16H10 can be taken as a ◊N2◊F2 superatomic molecule, where ◊N and ◊F denote 2D superatoms bearing 3π and 5π electrons, respectively. Interestingly, it represents the first 2D superatomic halogen-bridge molecule, which realizes π electronic shell-closure via two three-supercenter two-electron bridging bonds. Additionally, a N-doped nanoporous graphene with a wide band gap (1.22 eV) was designed based on C16H10, which can be considered as a periodic aggregate of 2D superatomic wires composed of 2π-◊C and bridging ◊F superatoms. This work enriches the 2D superatomic-molecule chemistry and provides a practicable bottom-up assemble approach to obtain 2D functional materials with tunable band gaps.

Unveiling the Nature of Chemical Bonds in Real Space

Recent advent of diverse chemical entities necessitates a re-evaluation of chemical bond concepts, underscoring the importance of experimental evidence. Our prior study introduced a general methodology, termed Core Differential Fourier Synthesis (CDFS), for mapping the distribution of valence electron density (VED) in crystalline substances within real space. In this study, we directly compare the VED distributions obtained through CDFS with those derived from high-accuracy theoretical calculation using long-range corrected density functional theory, which quantitatively reproduces accurate orbital energies. This comparison serves to demonstrate the precision of the CDFS in replicating complex details. The VED patterns observed experimentally exhibited detailed structures and phases of wave functions indicative of sp3 hybrid orbitals, closely aligning with theoretical predictions. This alignment underscores the utility of our approach in gathering quantum chemical data experimentally, a crucial step for discussing the chemical properties, such as reaction mechanisms.

Hidden structures: a driving factor to achieve low thermal conductivity and high thermoelectric performance

The long-range periodic atomic arrangement or the lack thereof in solids typically dictates the magnitude and temperature dependence of their lattice thermal conductivity (κlat). Compared to crystalline materials, glasses exhibit a much-suppressed κlat across all temperatures as the phonon mean free path reaches parity with the interatomic distances therein. While the occurrence of such glass-like thermal transport in crystalline solids captivates the scientific community with its fundamental inquiry, it also holds the potential for profoundly impacting the field of thermoelectric energy conversion. Therefore, efficient manipulation of thermal transport and comprehension of the microscopic mechanisms dictating phonon scattering in crystalline solids are paramount. As quantized lattice vibrations (i.e., phonons) drive κlat, atomistic insights into the chemical bonding characteristics are crucial to have informed knowledge about their origins. Recently, it has been observed that within the highly symmetric 'averaged' crystal structures, often there are hidden locally asymmetric atomic motifs (within a few Å), which exert far-reaching influence on phonon transport. Phenomena such as local atomic off-centering, atomic rattling or tunneling, liquid-like atomic motion, site splitting, local ordering, etc., which arise within a few Å scales, are generally found to drastically disrupt the passage of heat carrying phonons. Despite their profound implication(s) for phonon dynamics, they are often overlooked by traditional crystallographic techniques. In this review, we provide a brief overview of the fundamental aspects of heat transport and explore the status quo of innately low thermally conductive crystalline solids, wherein the phonon dynamics is majorly governed by local structural phenomena. We also discuss advanced techniques capable of characterizing the crystal structure at the sub-atomic level. Subsequently, we delve into the emergent new ideas with examples linked to local crystal structure and lattice dynamics. While discussing the implications of the local structure for thermal conductivity, we provide the state-of-the-art examples of high-performance thermoelectric materials. Finally, we offer our viewpoint on the experimental and theoretical challenges, potential new paths, and the integration of novel strategies with material synthesis to achieve low κlat and realize high thermoelectric performance in crystalline solids via local structure designing.

Electron-Deficient Multicenter Bonding in Phase Change Materials: A Chance for Reconciliation

In the last few years, a controversy has been raised regarding the nature of the chemical bonding present in phase change materials (PCMs), many of which are minerals such as galena (PbS), clausthalite (PbSe), and altaite (PbTe). Two opposite bonding models have claimed to be able to explain the extraordinary properties of PCMs in the last decade: the hypervalent (electron-rich multicenter) bonding model and the metavalent (electron-deficient) bonding model. In this context, a third bonding model, the electron-deficient multicenter bonding model, has been recently added. In this work, we comment on the pros and cons of the hypervalent and metavalent bonding models and briefly review the three approaches. We suggest that both hypervalent and metavalent bonding models can be reconciled with the third way, which considers that PCMs are governed by electron-deficient multicenter bonds. To help supporters of the metavalent and hypervalent bonding model to change their minds, we have commented on the chemical bonding in GeSe and SnSe under pressure and in several polyiodides with different sizes and geometries.

CsZnPbBr3/ZnS core/shell perovskite nanocrystals for stable and efficient white light-emitting diodes

The widespread applicability of perovskite nanocrystals (PeNCs) is impeded by their intrinsic instability. A promising solution is utilizing robust chalcogenides as a protective shell to shield the sensitive luminescent cores from the external environment. However, the inferior structural stability and surface lability of PeNCs usually lead to perovskite phase transition during shell growth. Herein, we introduced smaller Zn ions to partially replace Pb ions in perovskites, which reduces the Pb-X bond length and enhances the Pb-X bond energy for inner lattice stabilization. Simultaneously, extra oleylammonium bromide (OAmBr) was added to protect the labile surface of PeNCs by compensating for the detachment of ligands and the loss of surface Br ions. As a result, the dual strategies enable the epitaxial growth of a ZnS shell and significantly enhance the chemical stability of CsZnPbBr3/ZnS core/shell PeNCs. After three thermal cycles ranging from 300 to 450 K, the core/shell PeNCs retained 70% of their initial photoluminescence (PL) intensity. In stark contrast, the pristine CsPbBr3 PeNCs exhibit complete PL quenching after just the first temperature cycle. For practical applications, the green core/shell PeNCs were integrated with commercially available red-emitting phosphors on a blue-emitting InGaN chip to fabricate a white light-emitting diode (WLED), which demonstrates a high luminous efficacy (LE) of 61.3 lm W-1 and nearly constant Commission Internationale de l'Eclairage (CIE) coordinates under varying operating currents.

Chemical bonding in phase-change chalcogenides

Almost all phase-change memory materials (PCM) contain chalcogen atoms, and their chemical bonds have been denoted both as 'electron-deficient' [sometimes referred to as 'metavalent'] and 'electron-rich' ['hypervalent', multicentre]. The latter involve lone-pair electrons. We have performed calculations that can discriminate unambiguously between these two classes of bond and have shown that PCM have electron-rich, 3c-4e ('hypervalent') bonds. Plots of charge transferred between (ET) and shared with (ES) neighbouring atoms cannot on their own distinguish between 'metavalent' and 'hypervalent' bonds, both of which involve single-electron bonds. PCM do not exhibit 'metavalent' bonding and are not electron-deficient; the bonding is electron-rich of the 'hypervalent' or multicentre type.

Metavalently bonded tellurides: the essence of improved thermoelectric performance in elemental Te

Elemental Te is important for semiconductor applications including thermoelectric energy conversion. Introducing dopants such as As, Sb, and Bi has been proven critical for improving its thermoelectric performance. However, the remarkably low solubility of these elements in Te raises questions about the mechanism with which these dopants can improve the thermoelectric properties. Indeed, these dopants overwhelmingly form precipitates rather than dissolve in the Te lattice. To distinguish the role of doping and precipitation on the properties, we have developed a correlative method to locally determine the structure-property relationship for an individual matrix or precipitate. We reveal that the conspicuous enhancement of electrical conductivity and power factor of bulk Te stems from the dopant-induced metavalently bonded telluride precipitates. These precipitates form electrically beneficial interfaces with the Te matrix. A quantum-mechanical-derived map uncovers more candidates for advancing Te thermoelectrics. This unconventional doping scenario adds another recipe to the design options for thermoelectrics and opens interesting pathways for microstructure design.

Investigating the impact of electron beam irradiation on electrical, magnetic, and optical properties of XLPE/Co3O4 nanocomposites

Nowadays, many researchers aim to fill polymer materials with inorganic nanoparticles to enhance the polymer properties and gain the merits of the polymeric host matrix. Sol-gel synthesized Co3O4 nanoparticles are subjected to different doses of electron beam (10, 20, and 30 kGy) to study their physiochemical properties and choose the optimized nanoparticles to fill our polymeric matrix. Crosslinked polyethylene (XLPE) has been filled with 5 wt % of un-irradiated cobalt oxide nanoparticles using the melt extruder method. The structural, optical, magnetic, and electrical properties of the XLPE/Co3O4 nanocomposite before and after exposure to different doses of electron beam radiation have been characterized. The crystallite size of face-centered cubic spinel Co3O4 nanoparticles has been confirmed by XRD whereas and their unique truncated octahedral shape obviously appears in SEM micrographs. The crystallite size of Co3O4 nanoparticles has decreased from 47.5 to 31.5 nm upon irradiation at a dose of 30 kGy, and significantly decreased to 18.5 nm upon filling inside XLPE matrix. Related to the oxidation effect of the electron beam, the Co2+/Co3+ ratio on the surface of Co3O4 nanoparticles has decreased upon irradiation as verified by XPS technique. This consequently caused the partial elimination of oxygen vacancies, mainly responsible for the weak ferromagnetic behavior of Co3O4 in its nanoscale. This appears as decreased saturation magnetization as depicted by VSM. The XLPE/Co3O4 nanocomposite has also shown weak ferromagnetic behavior but the coercive field (Hc) has increased from 112.57 to 175.72 G upon filling inside XLPE matrix and decreased to 135.18 G after irradiating the nanocomposite at a dose of 30 kGy. The ionic conductivity of XLPE has increased from 0.133 × 10-7 to 2.198 × 10-3 S/cm upon filling with Co3O4 nanoparticles while a slight increase is observed upon irradiation.

Metavalent or Hypervalent Bonding: Is There a Chance for Reconciliation?

A family of solids including crystalline phase change materials such as GeTe and Sb2 Te3 , topological insulators like Bi2 Se3, and halide perovskites such as CsPbI3 possesses an unconventional property portfolio that seems incompatible with ionic, metallic, or covalent bonding. Instead, evidence is found for a bonding mechanism characterized by half-filled p-bands and a competition between electron localization and delocalization. Different bonding concepts have recently been suggested based on quantum chemical bonding descriptors which either define the bonds in these solids as electron-deficient (metavalent) or electron-rich (hypervalent). This disagreement raises concerns about the accuracy of quantum-chemical bonding descriptors is showed. Here independent of the approach chosen, electron-deficient bonds govern the materials mentioned above is showed. A detailed analysis of bonding in electron-rich XeF2 and electron-deficient GeTe shows that in both cases p-electrons govern bonding, while s-electrons only play a minor role. Yet, the properties of the electron-deficient crystals are very different from molecular crystals of electron-rich XeF2 or electron-deficient B2 H6 . The unique properties of phase change materials and related solids can be attributed to an extended system of half-filled bonds, providing further arguments as to why a distinct nomenclature such as metavalent bonding is adequate and appropriate for these solids.

Tailoring chemical bonds to design unconventional glasses

Glasses are commonly described as disordered counterparts of the corresponding crystals; both usually share the same short-range order, but glasses lack long-range order. Here, a quantification of chemical bonding in a series of glasses and their corresponding crystals is performed, employing two quantum-chemical bonding descriptors, the number of electrons transferred and shared between adjacent atoms. For popular glasses like SiO2, GeSe2, and GeSe, the quantum-chemical bonding descriptors of the glass and the corresponding crystal hardly differ. This explains why these glasses possess a similar short-range order as their crystals. Unconventional glasses, which differ significantly in their short-range order and optical properties from the corresponding crystals are only found in a distinct region of the map spanned by the two bonding descriptors. This region contains crystals of GeTe, Sb2Te3, and GeSb2Te4, which employ metavalent bonding. Hence, unconventional glasses are only obtained for solids, whose crystals employ theses peculiar bonds.

Mechanism of Thermoelectric Performance Enhancement in CaMg2 Bi2 -Based Materials with Different Cation Site Doping

Chemical bonds determine electron and phonon transport in solids. Tailoring chemical bonding in thermoelectric materials causes desirable or compromise thermoelectric transport properties. In this work, taking an example of CaMg2 Bi2 with covalent and ionic bonds, density functional theory calculations uncover that element Zn, respectively, replacing Ca and Mg sites cause the weakness of ionic and covalent bonding. Electrically, Zn doping at both Ca and Mg sites increases carrier concentration, while the former leads to higher carrier concentration than that of the latter because of its lower vacancy formation energy. Both doping types increase density-of-state effective mass but their mechanisms are different. The Zn doping Ca site induces resonance level in valence band and Zn doping Mg site promotes orbital alignment. Thermally, point defect and the change of phonon dispersion introduced by doping result in pronounced reduction of lattice thermal conductivity. Finally, combining with the further increase of carrier concentration caused by Na doping and the modulation of band structure and the decrease of lattice thermal conductivity caused by Ba doping, a high figure-of-merit ZT of 1.1 at 823 K in Zn doping Ca sample is realized, which is competitive in 1-2-2 Zintl phase thermoelectric systems.

Pressure-induced reversal of Peierls-like distortions elicits the polyamorphic transition in GeTe and GeSe

While polymorphism is prevalent in crystalline solids, polyamorphism draws increasing interest in various types of amorphous solids. Recent studies suggested that supercooling of liquid phase-change materials (PCMs) induces Peierls-like distortions in their local structures, underlying their liquid-liquid transitions before vitrification. However, the mechanism of how the vitrified phases undergo a possible polyamorphic transition remains elusive. Here, using high-energy synchrotron X-rays, we can access the precise pair distribution functions under high pressure and provide clear evidence that pressure can reverse the Peierls-like distortions, eliciting a polyamorphic transition in GeTe and GeSe. Combined with simulations based on machine-learned-neural-network potential, our structural analysis reveals a high-pressure state characterized by diminished Peierls-like distortion, greater coherence length, reduced compressibility, and a narrowing bandgap. Our finding underscores the crucial role of Peierls-like distortions in amorphous octahedral systems including PCMs. These distortions can be controlled through pressure and composition, offering potentials for designing properties in PCM-based devices.

Evolution of Short-Range Order of Amorphous GeTe Upon Structural Relaxation Obtained by TEM Diffractometry and RMC Methods

Glasses frequently reveal structural relaxation that leads to changes in their physical properties including enthalpy, specific volume, and resistivity. Analyzing the short-range order (SRO) obtained from electron diffraction by transmission electron microscopy (TEM) in combination with Reverse-Monte-Carlo (RMC) simulations is shown to provide information on the atomic arrangement. The technique elaborated here features several benefits including reliability, accessibility, and allows for obtaining detailed structural data quickly. This is demonstrated with a detailed view of the structural changes in the as-deposited amorphous phase change material (PCM) GeTe. The data show a significant increase in the average bond angle upon thermal treatment. At the same time the fraction of tetrahedrally coordinated Ge atoms decreases due to an increase in octahedrally distorted and pyramidal motifs. This finding provides further evidence for the atomic processes that govern structural relaxation in amorphous GeTe and other PCMs. A thorough literature review finally unveils possible origins of the large discrepancies reported on the structure of amorphous GeTe.

Quantum Chemical Similarities of Bonding in Polyiodides and Phase-Change Materials

Covalent chemical bonding beyond the two-center two-electron (2c-2e) bond is well-known for (inter)halogenic compounds, in particular, electron-rich multicenter (or hypervalent) bonding of the three-center four-electron (3c-4e) type to explain both their structure and stability. In the present work, we examine different solid-state polyiodides by combining both local orbital wave function and projected force constant analysis in order to numerically quantify the influence of multicenter (hypervalent) bonding based on periodic density functional theory (DFT) calculations. After linking our findings to established qualitative theories on multicenter bonding, particularly, Alcock's "secondary" bonding, we relate the bonding behavior in polyiodides to industrially relevant phase-change materials of the Ge-Sb-Te class, finding further evidence for the same underlying cause as regards chemical bonding in both material classes.

Two-step phase manipulation by tailoring chemical bonds results in high-performance GeSe thermoelectrics

In thermoelectrics, phase engineering serves a crucial function in determining the power factor by affecting the band degeneracy. However, for low-symmetry compounds, the mainstream one-step phase manipulation strategy, depending solely on the valley or orbital degeneracy, is inadequate to attain a high density-of-states effective mass and exceptional zT. Here, we employ a distinctive two-step phase manipulation strategy through stepwise tailoring chemical bonds in GeSe. Initially, we amplify the valley degeneracy via CdTe alloying, which elevates the crystal symmetry from a covalently bonded orthorhombic to a metavalently bonded rhombohedral phase by significantly suppressing the Peierls distortion. Subsequently, we incorporate Pb to trigger the convergence of multivalence bands and further enhance the density-of-states effective mass by moderately restraining the Peierls distortion. Additionally, the atypical metavalent bonding in rhombohedral GeSe enables a high Ge vacancy concentration and a small band effective mass, leading to increased carrier concentration and mobility. This weak chemical bond along with strong lattice anharmonicity also reduces lattice thermal conductivity. Consequently, this unique property ensemble contributes to an outstanding zT of 0.9 at 773 K for Ge0.80Pb0.20Se(CdTe)0.25. This work underscores the pivotal role of the two-step phase manipulation by stepwise tailoring of chemical bonds in improving the thermoelectric performance of p-bonded chalcogenides.

Large Mobility Enables Higher Thermoelectric Cooling and Power Generation Performance in n-type AgPb18+xSbTe20 Crystals

The room-temperature thermoelectric performance of materials underpins their thermoelectric cooling ability. Carrier mobility plays a significant role in the electronic transport property of materials, especially near room temperature, which can be optimized by proper composition control and growing crystals. Here, we grow Pb-compensated AgPb18+xSbTe20 crystals using a vertical Bridgman method. A large weighted mobility of ∼410 cm2 V-1 s-1 is achieved in the AgPb18.4SbTe20 crystal, which is almost 4 times higher than that of the polycrystalline counterpart due to the elimination of grain boundaries and Ag-rich dislocations verified by atom probe tomography, highlighting the significant benefit of growing crystals for low-temperature thermoelectrics. Due to the largely promoted weighted mobility, we achieve a high power factor of ∼37.8 μW cm-1 K-2 and a large figure of merit ZT of ∼0.6 in AgPb18.4SbTe20 crystal at 303 K. We further designed a 7-pair thermoelectric module using this n-type crystal and a commercial p-type (Bi, Sb)2Te3-based material. As a result, a high cooling temperature difference (ΔT) of ∼42.7 K and a power generation efficiency of ∼3.7% are achieved, revealing promising thermoelectric applications for PbTe-based materials near room temperature.

Gibbs Adsorption and Zener Pinning Enable Mechanically Robust High-Performance Bi2 Te3 -Based Thermoelectric Devices

Bi2 Te3 -based alloys have great market demand in miniaturized thermoelectric (TE) devices for solid-state refrigeration and power generation. However, their poor mechanical properties increase the fabrication cost and decrease the service durability. Here, this work reports on strengthened mechanical robustness in Bi2 Te3 -based alloys due to thermodynamic Gibbs adsorption and kinetic Zener pinning at grain boundaries enabled by MgB2 decomposition. These effects result in much-refined grain size and twofold enhancement of the compressive strength and Vickers hardness in (Bi0.5 Sb1.5 Te3 )0.97 (MgB2 )0.03 compared with that of traditional powder-metallurgy-derived Bi0.5 Sb1.5 Te3 . High mechanical properties enable excellent cutting machinability in the MgB2 -added samples, showing no missing corners or cracks. Moreover, adding MgB2 facilitates the simultaneous optimization of electron and phonon transport for enhancing the TE figure of merit (ZT). By further optimizing the Bi/Sb ratio, the sample (Bi0.4 Sb1.6 Te3 )0.97 (MgB2 )0.03 shows a maximum ZT of ≈1.3 at 350 K and an average ZT of 1.1 within 300-473 K. As a consequence, robust TE devices with an energy conversion efficiency of 4.2% at a temperature difference of 215 K are fabricated. This work paves a new way for enhancing the machinability and durability of TE materials, which is especially promising for miniature devices.

Metavalent Bonding in Layered Phase-Change Memory Materials

Metavalent bonding (MVB) is characterized by the competition between electron delocalization as in metallic bonding and electron localization as in covalent or ionic bonding, serving as an essential ingredient in phase-change materials for advanced memory applications. The crystalline phase-change materials exhibits MVB, which stems from the highly aligned p orbitals and results in large dielectric constants. Breaking the alignment of these chemical bonds leads to a drastic reduction in dielectric constants. In this work, it is clarified how MVB develops across the so-called van der Waals-like gaps in layered Sb2 Te3 and Ge-Sb-Te alloys, where coupling of p orbitals is significantly reduced. A type of extended defect involving such gaps in thin films of trigonal Sb2 Te3 is identified by atomic imaging experiments and ab initio simulations. It is shown that this defect has an impact on the structural and optical properties, which is consistent with the presence of non-negligible electron sharing in the gaps. Furthermore, the degree of MVB across the gaps is tailored by applying uniaxial strain, which results in a large variation of dielectric function and reflectivity in the trigonal phase. At last, design strategies are provided for applications utilizing the trigonal phase.

Doping by Design: Enhanced Thermoelectric Performance of GeSe Alloys Through Metavalent Bonding

Doping is usually the first step to tailor thermoelectrics. It enables precise control of the charge-carrier concentration and concomitant transport properties. Doping should also turn GeSe, which features an intrinsically a low carrier concentration, into a competitive thermoelectric. Yet, elemental doping fails to improve the carrier concentration. In contrast, alloying with Ag-V-VI₂ compounds causes a remarkable enhancement of thermoelectric performance. This advance is closely related to a transition in the bonding mechanism, as evidenced by sudden changes in the optical dielectric constant ε_∞ , the Born effective charge, the maximum of the optical absorption ε₂ (ω), and the bond-breaking behavior. These property changes are indicative of the formation of metavalent bonding (MVB), leading to an octahedral-like atomic arrangement. MVB is accompanied by a thermoelectric-favorable band structure featuring anisotropic bands with small effective masses and a large degeneracy. A quantum-mechanical map, which distinguishes different types of chemical bonding, reveals that orthorhombic GeSe employs covalent bonding, while rhombohedral and cubic GeSe utilize MVB. The transition from covalent to MVB goes along with a pronounced improvement in thermoelectric performance. The failure or success of different dopants can be explained by this concept, which redefines doping rules and provides a "treasure map" to tailor p-bonded chalcogenides.

Strong charge carrier scattering at grain boundaries of PbTe caused by the collapse of metavalent bonding

Grain boundaries (GBs) play a significant role in controlling the transport of mass, heat and charge. To unravel the mechanisms underpinning the charge carrier scattering at GBs, correlative microscopy combined with local transport measurements is realized. For the PbTe material, the strength of carrier scattering at GBs depends on its misorientation angle. A concomitant change in the barrier height is observed, significantly increasing from low- to high-angle GBs. Atom probe tomography measurements reveal a disruption of metavalent bonding (MVB) at the dislocation cores of low-angle GBs, as evidenced by the abrupt change in bond-rupture behavior. In contrast, MVB is completely destroyed at high-angle GBs, presumably due to the increased Peierls distortion. The collapse of MVB is accompanied by a breakdown of the dielectric screening, which explains the enlarged GB barrier height. These findings correlate charge carrier scattering with bonding locally, promising new avenues for the design of advanced functional materials.