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Yin ZX, Chen H, Yin SF, Zhang D, Tang XG, Roy VAL, Sun QJ. Recent Progress on Heterojunction-Based Memristors and Artificial Synapses for Low-Power Neural Morphological Computing. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2025; 21:e2412851. [PMID: 40103529 DOI: 10.1002/smll.202412851] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/31/2024] [Revised: 02/18/2025] [Indexed: 03/20/2025]
Abstract
Memristors and artificial synapses have attracted tremendous attention due to their promising potential for application in the field of neural morphological computing, but at the same time, continuous optimization and improvement in energy consumption are also highly desirable. In recent years, it has been demonstrated that heterojunction is of great significance in improving the energy consumption of memristors and artificial synapses. By optimizing the material composition, interface characteristics, and device structure of heterojunctions, energy consumption can be reduced, and performance stability and durability can be improved, providing strong support for achieving low-power neural morphological computing systems. Herein, we review the recent progress on heterojunction-based memristors and artificial synapses by summarizing the working mechanisms and recent advances in heterojunction memristors, in terms of material selection, structure design, fabrication techniques, performance optimization strategies, etc. Then, the applications of heterojunction-based artificial synapses in neuromorphological computing and deep learning are introduced and discussed. After that, the remaining bottlenecks restricting the development of heterojunction-based memristors and artificial synapses are introduced and discussed in detail. Finally, corresponding strategies to overcome the remaining challenges are proposed. We believe this review may shed light on the development of high-performance memristors and artificial synapse devices.
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Affiliation(s)
- Zhi-Xiang Yin
- School of Physics and Optoelectronic Engineering & Guangdong Provincial Key Laboratory of Sensing Physics and System Integration Applications, Guangdong University of Technology, Guangzhou, Guangdong, 510006, P. R. China
| | - Hao Chen
- School of Physics and Optoelectronic Engineering & Guangdong Provincial Key Laboratory of Sensing Physics and System Integration Applications, Guangdong University of Technology, Guangzhou, Guangdong, 510006, P. R. China
| | - Sheng-Feng Yin
- School of Physics and Optoelectronic Engineering & Guangdong Provincial Key Laboratory of Sensing Physics and System Integration Applications, Guangdong University of Technology, Guangzhou, Guangdong, 510006, P. R. China
| | - Dan Zhang
- School of Physics and Optoelectronic Engineering & Guangdong Provincial Key Laboratory of Sensing Physics and System Integration Applications, Guangdong University of Technology, Guangzhou, Guangdong, 510006, P. R. China
| | - Xin-Gui Tang
- School of Physics and Optoelectronic Engineering & Guangdong Provincial Key Laboratory of Sensing Physics and System Integration Applications, Guangdong University of Technology, Guangzhou, Guangdong, 510006, P. R. China
| | - Vellaisamy A L Roy
- School of Science and Technology, Hong Kong Metropolitan University, Hong Kong, 999077, P. R. China
| | - Qi-Jun Sun
- School of Physics and Optoelectronic Engineering & Guangdong Provincial Key Laboratory of Sensing Physics and System Integration Applications, Guangdong University of Technology, Guangzhou, Guangdong, 510006, P. R. China
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2
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Jabri M, Hossein-Babaei F. DC field-biased multibit/analog artificial synapse featuring an additional degree of freedom for performance tuning. NANOSCALE 2025; 17:3389-3401. [PMID: 39704050 DOI: 10.1039/d4nr03464c] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 12/21/2024]
Abstract
Multibit/analog artificial synapses are in demand for neuromorphic computing systems. A problem hindering the utilization of memristive artificial synapses in commercial neuromorphic systems is the rigidity of their functional parameters, plasticity in particular. Here, we report fabricating polycrystalline rutile-based memristive memory segments with Ti/poly-TiO2/Ti structures featuring multibit/analog storage and the first use of a tunable DC-biasing for synaptic plasticity adjustment from short- to long-term. The unbiased device is of short-term plasticity, positive biasing increases the remanence of the recorded events and the device gains long-term plasticity at a specific biasing level determined from the device geometry. The adjustability of the biasing field provides an additional degree of freedom allowing performance tuning; the paired-pulse facilitation index of the device is tuned by the biasing level adjustment providing further functional versatility. An appropriately biased segment provides more than 10 synaptic weight levels linearly depending on the number and duration of the stimulating spikes. The relationship with spike magnitude is exponential. The experimentally determined nonlinearity coefficient of the biased device for 50 potentiating spikes is comparable to the best published data. The spike-timing-dependent plasticity determined experimentally for the biased device in its long-term plasticity mode fits the mathematical relationship developed for biological synapses. Fabricated on a titanium metal foil, the produced memristors are sturdy and flexible making them suitable for wearable and implantable intelligent electronics. Our findings are anticipated to raise the potential of forming artificial synapses out of polycrystalline metal oxide thin films.
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Affiliation(s)
- Milad Jabri
- Electronic Materials Laboratory, K. N. Toosi University of Technology, Tehran 1631714191, Iran.
| | - Faramarz Hossein-Babaei
- Electronic Materials Laboratory, K. N. Toosi University of Technology, Tehran 1631714191, Iran.
- Hezare Sevom Co. Ltd, 7, Niloofar Square, Tehran 1533874417, Iran
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Hur P, Yoon D, Yoon M, Park Y, Son J. Artificial Photothermal Nociceptor Using Mott Oscillators. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2025; 12:e2409353. [PMID: 39692203 PMCID: PMC11809409 DOI: 10.1002/advs.202409353] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/08/2024] [Revised: 12/04/2024] [Indexed: 12/19/2024]
Abstract
Bioinspired sensory systems based on spike neural networks have received considerable attention in resolving high energy consumption and limited bandwidth in current sensory systems. To efficiently produce spike signals upon exposure to external stimuli, compact neuron devices are required for signal detection and their encoding into spikes in a single device. Herein, it is demonstrated that Mott oscillative spike neurons can integrate sensing and ceaseless spike generation in a compact form, which emulates the process of evoking photothermal sensing in the features of biological photothermal nociceptors. Interestingly, frequency-tunable and repetitive spikes are generated above the threshold value (Pth = 84 mW cm-2) as a characteristic of "threshold" in leaky-integrate-and-fire (LIF) neurons; the neuron devices successfully mimic a crucial feature of biological thermal nociceptors, including modulation of frequency coding and startup latency depending on the intensity of photothermal stimuli. Furthermore, Mott spike neurons are self-adapted after sensitization upon exposure to high-intensity electromagnetic radiation, which can replicate allodynia and hyperalgesia in a biological sensory system. Thus, this study presents a unique approach to capturing and encoding environmental source data into spikes, enabling efficient sensing of environmental sources for the application of adaptive sensory systems.
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Affiliation(s)
- Pyeongkang Hur
- Department of Materials Science and EngineeringPohang University of Science and Technology (POSTECH)Pohang37683Republic of Korea
| | - Daseob Yoon
- Department of Electrical EngineeringPukyong National UniversityBusan48513Republic of Korea
| | - Minwook Yoon
- Department of Materials Science and EngineeringSeoul National UniversitySeoul08826Republic of Korea
- Research Institute of Advanced MaterialsSeoul National UniversitySeoul08826Republic of Korea
- Institute of Applied PhysicsSeoul National UniversitySeoul08826Republic of Korea
| | - Yunkyu Park
- Materials Science and Technology DivisionOak Ridge National LaboratoryOak RidgeTN37830USA
| | - Junwoo Son
- Department of Materials Science and EngineeringSeoul National UniversitySeoul08826Republic of Korea
- Research Institute of Advanced MaterialsSeoul National UniversitySeoul08826Republic of Korea
- Institute of Applied PhysicsSeoul National UniversitySeoul08826Republic of Korea
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Zeng W, Luo X, Xu J, Zhang M, Liu S, Zhang Q, Zhu G. Ferroelectric/Electric-Double-Layer-Modulated Synaptic Thin Film Transistors toward an Artificial Tactile Perception System. ACS APPLIED MATERIALS & INTERFACES 2025; 17:5086-5100. [PMID: 39791524 DOI: 10.1021/acsami.4c19092] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 01/12/2025]
Abstract
Tactile sensation and recognition in the human brain are indispensable for interaction between the human body and the surrounding environment. It is quite significant for intelligent robots to simulate human perception and decision-making functions in a more human-like way to perform complex tasks. A combination of tactile piezoelectric sensors with neuromorphic transistors provides an alternative way to achieve perception and cognition functions for intelligent robots in human-machine interaction scenarios. To promote both long-term and short-term plasticity of the artificial synaptic transistor, a composite gate dielectric composed of ferroelectric terpolymer P(VDF-TrFE-CFE) and chitosan was intendedly developed, while amorphous metal oxide InZnO was adopted as the channel layer. The transition from short-term to long-term plasticity function was realized on the basis of the electric-double-layer effect and ferroelectric polarization. Benefiting from its low-voltage operation performance, this synaptic transistor was functionalized by connecting with a flexible piezoelectric poly(vinylidene fluoride) capacitor to exhibit tactile stimulus-excited synaptic behavior. Feedback control was further introduced into the tactile synaptic system to imitate two typical scenarios of sensation and response, including the action of a mechanical claw to pain sensation and spontaneous scratching to itch sensation. This work provides a perspective on achieving intelligent perception for soft robotics and healthcare application.
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Affiliation(s)
- Wanyu Zeng
- Department of Materials Science, National Engineering Lab for TFT-LCD Materials and Technologies, Fudan University, Shanghai 200433, China
| | - Xingsheng Luo
- Department of Materials Science, National Engineering Lab for TFT-LCD Materials and Technologies, Fudan University, Shanghai 200433, China
| | - Jiawei Xu
- Department of Materials Science, National Engineering Lab for TFT-LCD Materials and Technologies, Fudan University, Shanghai 200433, China
| | - Mengyun Zhang
- Department of Materials Science, National Engineering Lab for TFT-LCD Materials and Technologies, Fudan University, Shanghai 200433, China
| | - Shixin Liu
- Department of Materials Science, National Engineering Lab for TFT-LCD Materials and Technologies, Fudan University, Shanghai 200433, China
| | - Qun Zhang
- Department of Materials Science, National Engineering Lab for TFT-LCD Materials and Technologies, Fudan University, Shanghai 200433, China
| | - Guodong Zhu
- Department of Materials Science, National Engineering Lab for TFT-LCD Materials and Technologies, Fudan University, Shanghai 200433, China
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Zhang X, Wang C, Pi X, Li B, Ding Y, Yu H, Sun J, Wang P, Chen Y, Wang Q, Zhang C, Meng X, Chen G, Wang D, Wang Z, Mu Z, Song H, Zhang J, Niu S, Han Z, Ren L. Bionic Recognition Technologies Inspired by Biological Mechanosensory Systems. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2025:e2418108. [PMID: 39838736 DOI: 10.1002/adma.202418108] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/21/2024] [Revised: 12/23/2024] [Indexed: 01/23/2025]
Abstract
Mechanical information is a medium for perceptual interaction and health monitoring of organisms or intelligent mechanical equipment, including force, vibration, sound, and flow. Researchers are increasingly deploying mechanical information recognition technologies (MIRT) that integrate information acquisition, pre-processing, and processing functions and are expected to enable advanced applications. However, this also poses significant challenges to information acquisition performance and information processing efficiency. The novel and exciting mechanosensory systems of organisms in nature have inspired us to develop superior mechanical information bionic recognition technologies (MIBRT) based on novel bionic materials, structures, and devices to address these challenges. Herein, first bionic strategies for information pre-processing are presented and their importance for high-performance information acquisition is highlighted. Subsequently, design strategies and considerations for high-performance sensors inspired by mechanoreceptors of organisms are described. Then, the design concepts of the neuromorphic devices are summarized in order to replicate the information processing functions of a biological nervous system. Additionally, the ability of MIBRT is investigated to recognize basic mechanical information. Furthermore, further potential applications of MIBRT in intelligent robots, healthcare, and virtual reality are explored with a view to solve a range of complex tasks. Finally, potential future challenges and opportunities for MIBRT are identified from multiple perspectives.
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Affiliation(s)
- Xiangxiang Zhang
- Key Laboratory of Bionic Engineering (Ministry of Education), Jilin University, Changchun, Jilin, 130022, China
| | - Changguang Wang
- Key Laboratory of Bionic Engineering (Ministry of Education), Jilin University, Changchun, Jilin, 130022, China
| | - Xiang Pi
- Key Laboratory of Bionic Engineering (Ministry of Education), Jilin University, Changchun, Jilin, 130022, China
| | - Bo Li
- Key Laboratory of Bionic Engineering (Ministry of Education), Jilin University, Changchun, Jilin, 130022, China
- The National Key Laboratory of Automotive Chassis Integration and Bionics (ACIB), College of Biological and Agricultural Engineering, Jilin University, Changchun, 130022, China
| | - Yuechun Ding
- Key Laboratory of Bionic Engineering (Ministry of Education), Jilin University, Changchun, Jilin, 130022, China
| | - Hexuan Yu
- Key Laboratory of Bionic Engineering (Ministry of Education), Jilin University, Changchun, Jilin, 130022, China
| | - Jialue Sun
- Key Laboratory of Bionic Engineering (Ministry of Education), Jilin University, Changchun, Jilin, 130022, China
| | - Pinkun Wang
- Key Laboratory of Bionic Engineering (Ministry of Education), Jilin University, Changchun, Jilin, 130022, China
| | - You Chen
- Key Laboratory of Bionic Engineering (Ministry of Education), Jilin University, Changchun, Jilin, 130022, China
| | - Qun Wang
- Key Laboratory of Bionic Engineering (Ministry of Education), Jilin University, Changchun, Jilin, 130022, China
| | - Changchao Zhang
- Key Laboratory of Bionic Engineering (Ministry of Education), Jilin University, Changchun, Jilin, 130022, China
| | - Xiancun Meng
- Key Laboratory of Bionic Engineering (Ministry of Education), Jilin University, Changchun, Jilin, 130022, China
| | - Guangjun Chen
- Key Laboratory of Bionic Engineering (Ministry of Education), Jilin University, Changchun, Jilin, 130022, China
| | - Dakai Wang
- Key Laboratory of Bionic Engineering (Ministry of Education), Jilin University, Changchun, Jilin, 130022, China
| | - Ze Wang
- Key Laboratory of Bionic Engineering (Ministry of Education), Jilin University, Changchun, Jilin, 130022, China
| | - Zhengzhi Mu
- Key Laboratory of Bionic Engineering (Ministry of Education), Jilin University, Changchun, Jilin, 130022, China
| | - Honglie Song
- Key Laboratory of Bionic Engineering (Ministry of Education), Jilin University, Changchun, Jilin, 130022, China
| | - Junqiu Zhang
- Key Laboratory of Bionic Engineering (Ministry of Education), Jilin University, Changchun, Jilin, 130022, China
- The National Key Laboratory of Automotive Chassis Integration and Bionics (ACIB), College of Biological and Agricultural Engineering, Jilin University, Changchun, 130022, China
- Institute of Structured and Architected Materials, Liaoning Academy of Materials, Shenyang, 110167, China
| | - Shichao Niu
- Key Laboratory of Bionic Engineering (Ministry of Education), Jilin University, Changchun, Jilin, 130022, China
- The National Key Laboratory of Automotive Chassis Integration and Bionics (ACIB), College of Biological and Agricultural Engineering, Jilin University, Changchun, 130022, China
- Institute of Structured and Architected Materials, Liaoning Academy of Materials, Shenyang, 110167, China
| | - Zhiwu Han
- Key Laboratory of Bionic Engineering (Ministry of Education), Jilin University, Changchun, Jilin, 130022, China
- The National Key Laboratory of Automotive Chassis Integration and Bionics (ACIB), College of Biological and Agricultural Engineering, Jilin University, Changchun, 130022, China
- Institute of Structured and Architected Materials, Liaoning Academy of Materials, Shenyang, 110167, China
| | - Luquan Ren
- Key Laboratory of Bionic Engineering (Ministry of Education), Jilin University, Changchun, Jilin, 130022, China
- The National Key Laboratory of Automotive Chassis Integration and Bionics (ACIB), College of Biological and Agricultural Engineering, Jilin University, Changchun, 130022, China
- Institute of Structured and Architected Materials, Liaoning Academy of Materials, Shenyang, 110167, China
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Ding G, Li H, Zhao J, Zhou K, Zhai Y, Lv Z, Zhang M, Yan Y, Han ST, Zhou Y. Nanomaterials for Flexible Neuromorphics. Chem Rev 2024; 124:12738-12843. [PMID: 39499851 DOI: 10.1021/acs.chemrev.4c00369] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/07/2024]
Abstract
The quest to imbue machines with intelligence akin to that of humans, through the development of adaptable neuromorphic devices and the creation of artificial neural systems, has long stood as a pivotal goal in both scientific inquiry and industrial advancement. Recent advancements in flexible neuromorphic electronics primarily rely on nanomaterials and polymers owing to their inherent uniformity, superior mechanical and electrical capabilities, and versatile functionalities. However, this field is still in its nascent stage, necessitating continuous efforts in materials innovation and device/system design. Therefore, it is imperative to conduct an extensive and comprehensive analysis to summarize current progress. This review highlights the advancements and applications of flexible neuromorphics, involving inorganic nanomaterials (zero-/one-/two-dimensional, and heterostructure), carbon-based nanomaterials such as carbon nanotubes (CNTs) and graphene, and polymers. Additionally, a comprehensive comparison and summary of the structural compositions, design strategies, key performance, and significant applications of these devices are provided. Furthermore, the challenges and future directions pertaining to materials/devices/systems associated with flexible neuromorphics are also addressed. The aim of this review is to shed light on the rapidly growing field of flexible neuromorphics, attract experts from diverse disciplines (e.g., electronics, materials science, neurobiology), and foster further innovation for its accelerated development.
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Affiliation(s)
- Guanglong Ding
- State Key Laboratory of Radio Frequency Heterogeneous Integration, Shenzhen University, Shenzhen 518060, PR China
- College of Electronics and Information Engineering, Shenzhen University, Shenzhen 518060, PR China
| | - Hang Li
- Institute for Advanced Study, Shenzhen University, Shenzhen 518060, PR China
| | - JiYu Zhao
- Institute for Advanced Study, Shenzhen University, Shenzhen 518060, PR China
- State Key Laboratory of Fine Chemicals, Frontiers Science Center for Smart Materials, Dalian University of Technology, Dalian 116024, China
| | - Kui Zhou
- Institute for Advanced Study, Shenzhen University, Shenzhen 518060, PR China
- The Construction Quality Supervision and Inspection Station of Zhuhai, Zhuhai 519000, PR China
| | - Yongbiao Zhai
- College of Electronics and Information Engineering, Shenzhen University, Shenzhen 518060, PR China
| | - Ziyu Lv
- College of Electronics and Information Engineering, Shenzhen University, Shenzhen 518060, PR China
| | - Meng Zhang
- State Key Laboratory of Radio Frequency Heterogeneous Integration, Shenzhen University, Shenzhen 518060, PR China
- College of Electronics and Information Engineering, Shenzhen University, Shenzhen 518060, PR China
| | - Yan Yan
- State Key Laboratory of Radio Frequency Heterogeneous Integration, Shenzhen University, Shenzhen 518060, PR China
- College of Electronics and Information Engineering, Shenzhen University, Shenzhen 518060, PR China
| | - Su-Ting Han
- Department of Applied Biology and Chemical Technology, The Hong Kong Polytechnic University, Hung Hom 999077, Hong Kong SAR PR China
| | - Ye Zhou
- State Key Laboratory of Radio Frequency Heterogeneous Integration, Shenzhen University, Shenzhen 518060, PR China
- Institute for Advanced Study, Shenzhen University, Shenzhen 518060, PR China
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7
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Du Y, Gong J, Wei H, Yang L, Ni Y, Xu W. Ultrasensitive Flexible Organic Synaptic Transistors Modulated by a Chemically Cross-Linked Solvent-Resistive Ion Composite. J Phys Chem Lett 2024; 15:11139-11147. [PMID: 39480058 DOI: 10.1021/acs.jpclett.4c02522] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/02/2024]
Abstract
We demonstrate a flexible organic synaptic transistor (FOST) with an ion-composite electrolyte film resistant to chemical reagents, which uses a three-dimensionally cross-linked polyimide matrix to accommodate a high-concentration ionic liquid. FOST shows versatile synaptic plasticity for classical conditioning, high-pass filtering, and the learning-forgetting process. The device achieves low-energy consumption down to 1.02 femtojoule per synaptic event with an ultrasensitive impulse to presynaptic spike down to 0.5 mV. Moreover, the electrical performance of the device is still stable after 1000 mechanical bending cycles. These results demonstrate that the device can be applied to future flexible neuromorphic electronics.
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Affiliation(s)
- Yi Du
- Institute of Photoelectronic Thin Film Devices and Technology, Key Laboratory of Photoelectronic Thin Film Devices and Technology of Tianjin, College of Electronic Information and Optical Engineering, Engineering Research Center of Thin Film Photoelectronic Technology of Ministry of Education, Nankai University, Tianjin 300350, China
- Smart Sensing Interdisciplinary Science Center, Nankai University, Tianjin 300350, China
- Shenzhen Research Institute of Nankai University, Shenzhen 518000, China
| | - Jiangdong Gong
- Institute of Photoelectronic Thin Film Devices and Technology, Key Laboratory of Photoelectronic Thin Film Devices and Technology of Tianjin, College of Electronic Information and Optical Engineering, Engineering Research Center of Thin Film Photoelectronic Technology of Ministry of Education, Nankai University, Tianjin 300350, China
- Smart Sensing Interdisciplinary Science Center, Nankai University, Tianjin 300350, China
| | - Huanhuan Wei
- Institute of Photoelectronic Thin Film Devices and Technology, Key Laboratory of Photoelectronic Thin Film Devices and Technology of Tianjin, College of Electronic Information and Optical Engineering, Engineering Research Center of Thin Film Photoelectronic Technology of Ministry of Education, Nankai University, Tianjin 300350, China
- Smart Sensing Interdisciplinary Science Center, Nankai University, Tianjin 300350, China
| | - Lu Yang
- Institute of Photoelectronic Thin Film Devices and Technology, Key Laboratory of Photoelectronic Thin Film Devices and Technology of Tianjin, College of Electronic Information and Optical Engineering, Engineering Research Center of Thin Film Photoelectronic Technology of Ministry of Education, Nankai University, Tianjin 300350, China
- Smart Sensing Interdisciplinary Science Center, Nankai University, Tianjin 300350, China
- Shenzhen Research Institute of Nankai University, Shenzhen 518000, China
| | - Yao Ni
- Institute of Photoelectronic Thin Film Devices and Technology, Key Laboratory of Photoelectronic Thin Film Devices and Technology of Tianjin, College of Electronic Information and Optical Engineering, Engineering Research Center of Thin Film Photoelectronic Technology of Ministry of Education, Nankai University, Tianjin 300350, China
- Smart Sensing Interdisciplinary Science Center, Nankai University, Tianjin 300350, China
| | - Wentao Xu
- Institute of Photoelectronic Thin Film Devices and Technology, Key Laboratory of Photoelectronic Thin Film Devices and Technology of Tianjin, College of Electronic Information and Optical Engineering, Engineering Research Center of Thin Film Photoelectronic Technology of Ministry of Education, Nankai University, Tianjin 300350, China
- Smart Sensing Interdisciplinary Science Center, Nankai University, Tianjin 300350, China
- Shenzhen Research Institute of Nankai University, Shenzhen 518000, China
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8
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Wang X, Zhang L, Zhao Y, Qin Z, Hu B, Zhang L, Jiang Y, Wang Q, Liang Z, Tang X, Wu J, Cao F, Bu L, Lei B, Lu G. Electro-Optically Configurable Synaptic Transistors With Cluster-Induced Photoactive Dielectric Layer for Visual Simulation and Biomotor Stimuli. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2406977. [PMID: 39223900 DOI: 10.1002/adma.202406977] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/16/2024] [Revised: 07/24/2024] [Indexed: 09/04/2024]
Abstract
The integration of visual simulation and biorehabilitation devices promises great applications for sustainable electronics, on-demand integration and neuroscience. However, achieving a multifunctional synergistic biomimetic system with tunable optoelectronic properties at the individual device level remains a challenge. Here, an electro-optically configurable transistor employing conjugated-polymer as semiconductor layer and an insulating polymer (poly(1,8-octanediol-co-citrate) (POC)) with clusterization-triggered photoactive properties as dielectric layer is shown. These devices realize adeptly transition from electrical to optical synapses, featuring multiwavelength and multilevel optical synaptic memory properties exceeding 3 bits. Utilizing enhanced optical memory, the images learning and memory function for visual simulation are achieved. Benefiting from rapid electrical response akin to biological muscle activation, increased actuation occurs under increased stimulus frequency of gate voltage. Additionally, the transistor on POC substrate can be effectively degraded in NaOH solution due to degradation of POC. Pioneeringly, the electro-optically configurability stems from light absorption and photoluminescence of the aggregation cluster in POC layer after 200 °C annealing. The enhancement of optical synaptic plasticity and integration of motion-activation functions within a single device opens new avenues at the intersection of optoelectronics, synaptic computing, and bioengineering.
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Affiliation(s)
- Xin Wang
- Frontier Institute of Science and Technology, State Key Laboratory of Electrical Insulation and Power Equipment, Xi'an Jiaotong University, Xi'an, 712046, China
| | - Liuyang Zhang
- Frontier Institute of Science and Technology, State Key Laboratory of Electrical Insulation and Power Equipment, Xi'an Jiaotong University, Xi'an, 712046, China
- Department of Respiratory and Critical Care Medicine, The Second Affiliated Hospital of Xi'an Jiaotong University, Xi'an, 710004, China
| | - Yi Zhao
- Frontier Institute of Science and Technology, State Key Laboratory of Electrical Insulation and Power Equipment, Xi'an Jiaotong University, Xi'an, 712046, China
| | - Zongze Qin
- Frontier Institute of Science and Technology, State Key Laboratory of Electrical Insulation and Power Equipment, Xi'an Jiaotong University, Xi'an, 712046, China
| | - Bin Hu
- Frontier Institute of Science and Technology, State Key Laboratory of Electrical Insulation and Power Equipment, Xi'an Jiaotong University, Xi'an, 712046, China
| | - Long Zhang
- Frontier Institute of Science and Technology, State Key Laboratory of Electrical Insulation and Power Equipment, Xi'an Jiaotong University, Xi'an, 712046, China
- Department of Respiratory and Critical Care Medicine, The Second Affiliated Hospital of Xi'an Jiaotong University, Xi'an, 710004, China
| | - Yihang Jiang
- Frontier Institute of Science and Technology, State Key Laboratory of Electrical Insulation and Power Equipment, Xi'an Jiaotong University, Xi'an, 712046, China
| | - Qingyu Wang
- Frontier Institute of Science and Technology, State Key Laboratory of Electrical Insulation and Power Equipment, Xi'an Jiaotong University, Xi'an, 712046, China
| | - Zechen Liang
- Frontier Institute of Science and Technology, State Key Laboratory of Electrical Insulation and Power Equipment, Xi'an Jiaotong University, Xi'an, 712046, China
| | - Xian Tang
- Frontier Institute of Science and Technology, State Key Laboratory of Electrical Insulation and Power Equipment, Xi'an Jiaotong University, Xi'an, 712046, China
| | - Jingpeng Wu
- Frontier Institute of Science and Technology, State Key Laboratory of Electrical Insulation and Power Equipment, Xi'an Jiaotong University, Xi'an, 712046, China
| | - Fan Cao
- Frontier Institute of Science and Technology, State Key Laboratory of Electrical Insulation and Power Equipment, Xi'an Jiaotong University, Xi'an, 712046, China
| | - Laju Bu
- School of Chemistry, Xi'an Jiaotong University, Xi'an, 712046, China
| | - Bo Lei
- Frontier Institute of Science and Technology, State Key Laboratory of Electrical Insulation and Power Equipment, Xi'an Jiaotong University, Xi'an, 712046, China
- Department of Respiratory and Critical Care Medicine, The Second Affiliated Hospital of Xi'an Jiaotong University, Xi'an, 710004, China
| | - Guanghao Lu
- Frontier Institute of Science and Technology, State Key Laboratory of Electrical Insulation and Power Equipment, Xi'an Jiaotong University, Xi'an, 712046, China
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9
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Yang C, Wang H, Zhou G, Zhao H, Hou W, Zhu S, Zhao Y, Sun B. A Multimodal Perception-Enabled Flexible Memristor with Combined Sensing-Storage-Memory Functions for Enhanced Artificial Injury Recognition. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2024; 20:e2402588. [PMID: 39058216 DOI: 10.1002/smll.202402588] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/01/2024] [Revised: 07/07/2024] [Indexed: 07/28/2024]
Abstract
With the continuous advancement of wearable technology and advanced medical monitoring, there is an increasing demand for electronic devices that can adapt to complex environments and have high perceptual sensitivity. Here, a novel artificial injury perception device based on an Ag/HfOx/ITO/PET flexible memristor is designed to address the limitations of current technologies in multimodal perception and environmental adaptability. The memristor exhibits excellent resistive switching (RS) performance and mechanical flexibility under different bending angles (BAs), temperatures, humid environment, and repetitive folding conditions. Further, the device demonstrates the multimodal perception and conversion capabilities toward voltage, mechanical, and thermal stimuli through current response tests under different conditions, enabling not only the simulation of artificial injury perception but also holds promise for monitoring and controlling the movement of robotic arms. Moreover, the logical operation capability of the memristor-based reconfigurable logic (MRL) gates is also demonstrated, proving the device has great potential applications with sensing, storage, and memory functions. Overall, this study not only provides a direction for the development of the next-generation flexible multimodal sensors, but also has significant implications for technological advancements in many fields such as robotic arms, electronic skin (e-skin), and medical monitoring.
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Affiliation(s)
- Chuan Yang
- School of Physical Science and Technology, Key Laboratory of Advanced Technology of Materials, Southwest Jiaotong University, Chengdu, Sichuan, 610031, China
| | - Hongyan Wang
- School of Physical Science and Technology, Key Laboratory of Advanced Technology of Materials, Southwest Jiaotong University, Chengdu, Sichuan, 610031, China
| | - Guangdong Zhou
- College of Artificial Intelligence, Brain-Inspired Computing & Intelligent Control of Chongqing Key Lab, Southwest University, Chongqing, 400715, China
| | - Hongbin Zhao
- State Key Laboratory of Advanced Materials for Smart Sensing, General Research Institute for Nonferrous Metals, Beijing, 100088, China
| | - Wentao Hou
- College of Mechanical Engineering, Zhejiang University of Technology, Hangzhou, 310023, China
- Key Laboratory of Special Purpose Equipment and Advanced Processing Technology, Ministry of Education and Zhejiang Province, Zhejiang University of Technology, Hangzhou, 310014, China
| | - Shouhui Zhu
- School of Physical Science and Technology, Key Laboratory of Advanced Technology of Materials, Southwest Jiaotong University, Chengdu, Sichuan, 610031, China
| | - Yong Zhao
- School of Physical Science and Technology, Key Laboratory of Advanced Technology of Materials, Southwest Jiaotong University, Chengdu, Sichuan, 610031, China
| | - Bai Sun
- Frontier Institute of Science and Technology (FIST), Xi'an Jiaotong University, Xi'an, Shaanxi, 710049, China
- Micro-and Nano-Technology Research Center, State Key Laboratory for Manufacturing Systems Engineering, Xi'an Jiaotong University, Xi'an, Shaanxi, 710049, China
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10
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Yin H, Li Y, Tian Z, Li Q, Jiang C, Liang E, Guo Y. Ultra-High Sensitivity Anisotropic Piezoelectric Sensors for Structural Health Monitoring and Robotic Perception. NANO-MICRO LETTERS 2024; 17:42. [PMID: 39412621 PMCID: PMC11485280 DOI: 10.1007/s40820-024-01539-6] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/01/2024] [Accepted: 09/13/2024] [Indexed: 10/19/2024]
Abstract
Monitoring minuscule mechanical signals, both in magnitude and direction, is imperative in many application scenarios, e.g., structural health monitoring and robotic sensing systems. However, the piezoelectric sensor struggles to satisfy the requirements for directional recognition due to the limited piezoelectric coefficient matrix, and achieving sensitivity for detecting micrometer-scale deformations is also challenging. Herein, we develop a vector sensor composed of lead zirconate titanate-electronic grade glass fiber composite filaments with oriented arrangement, capable of detecting minute anisotropic deformations. The as-prepared vector sensor can identify the deformation directions even when subjected to an unprecedented nominal strain of 0.06%, thereby enabling its utility in accurately discerning the 5 μm-height wrinkles in thin films and in monitoring human pulse waves. The ultra-high sensitivity is attributed to the formation of porous ferroelectret and the efficient load transfer efficiency of continuous lead zirconate titanate phase. Additionally, when integrated with machine learning techniques, the sensor's capability to recognize multi-signals enables it to differentiate between 10 types of fine textures with 100% accuracy. The structural design in piezoelectric devices enables a more comprehensive perception of mechanical stimuli, offering a novel perspective for enhancing recognition accuracy.
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Affiliation(s)
- Hao Yin
- State Key Laboratory of Metal Matrix Composites, School of Materials Science and Engineering, Shanghai Jiao Tong University, Shanghai, 200240, People's Republic of China
| | - Yanting Li
- State Key Laboratory of Metal Matrix Composites, School of Materials Science and Engineering, Shanghai Jiao Tong University, Shanghai, 200240, People's Republic of China
| | - Zhiying Tian
- Beijing Vacuum Electronics Research Institute, Beijing, 100015, People's Republic of China
| | - Qichao Li
- State Key Laboratory of Metal Matrix Composites, School of Materials Science and Engineering, Shanghai Jiao Tong University, Shanghai, 200240, People's Republic of China.
| | - Chenhui Jiang
- State Key Laboratory of Metal Matrix Composites, School of Materials Science and Engineering, Shanghai Jiao Tong University, Shanghai, 200240, People's Republic of China
| | - Enfu Liang
- Fundamental Science On Vibration, Shock and Noise Laboratory, State Key Laboratory of Mechanical System and Vibration, School of Mechanical Engineering, Shanghai Jiao Tong University, Shanghai, 200240, People's Republic of China
| | - Yiping Guo
- State Key Laboratory of Metal Matrix Composites, School of Materials Science and Engineering, Shanghai Jiao Tong University, Shanghai, 200240, People's Republic of China.
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11
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Liu X, Sun C, Ye X, Zhu X, Hu C, Tan H, He S, Shao M, Li RW. Neuromorphic Nanoionics for Human-Machine Interaction: From Materials to Applications. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2311472. [PMID: 38421081 DOI: 10.1002/adma.202311472] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/31/2023] [Revised: 02/06/2024] [Indexed: 03/02/2024]
Abstract
Human-machine interaction (HMI) technology has undergone significant advancements in recent years, enabling seamless communication between humans and machines. Its expansion has extended into various emerging domains, including human healthcare, machine perception, and biointerfaces, thereby magnifying the demand for advanced intelligent technologies. Neuromorphic computing, a paradigm rooted in nanoionic devices that emulate the operations and architecture of the human brain, has emerged as a powerful tool for highly efficient information processing. This paper delivers a comprehensive review of recent developments in nanoionic device-based neuromorphic computing technologies and their pivotal role in shaping the next-generation of HMI. Through a detailed examination of fundamental mechanisms and behaviors, the paper explores the ability of nanoionic memristors and ion-gated transistors to emulate the intricate functions of neurons and synapses. Crucial performance metrics, such as reliability, energy efficiency, flexibility, and biocompatibility, are rigorously evaluated. Potential applications, challenges, and opportunities of using the neuromorphic computing technologies in emerging HMI technologies, are discussed and outlooked, shedding light on the fusion of humans with machines.
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Affiliation(s)
- Xuerong Liu
- CAS Key Laboratory of Magnetic Materials and Devices, and Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, 315201, China
- Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, 315201, China
- College of Materials Sciences and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Cui Sun
- CAS Key Laboratory of Magnetic Materials and Devices, and Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, 315201, China
- Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, 315201, China
| | - Xiaoyu Ye
- CAS Key Laboratory of Magnetic Materials and Devices, and Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, 315201, China
- Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, 315201, China
| | - Xiaojian Zhu
- CAS Key Laboratory of Magnetic Materials and Devices, and Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, 315201, China
- Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, 315201, China
| | - Cong Hu
- CAS Key Laboratory of Magnetic Materials and Devices, and Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, 315201, China
- Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, 315201, China
| | - Hongwei Tan
- Department of Applied Physics, Aalto University, Aalto, FI-00076, Finland
| | - Shang He
- CAS Key Laboratory of Magnetic Materials and Devices, and Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, 315201, China
- Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, 315201, China
| | - Mengjie Shao
- CAS Key Laboratory of Magnetic Materials and Devices, and Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, 315201, China
- Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, 315201, China
| | - Run-Wei Li
- CAS Key Laboratory of Magnetic Materials and Devices, and Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, 315201, China
- Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, 315201, China
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12
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Li Y, He G, Wang W, Fu C, Jiang S, Fortunato E, Martins R. A high-performance organic lithium salt-doped OFET with the optical radical effect for photoelectric pulse synaptic simulation and neuromorphic memory learning. MATERIALS HORIZONS 2024; 11:3867-3877. [PMID: 38787754 DOI: 10.1039/d4mh00297k] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/26/2024]
Abstract
Simulation of synaptic characteristics is essential for the application of organic field effect transistors (OFETs) in neural morphology. Although excellent performance, including bias stability and mobility, as well as photoelectric pulse synaptic simulation, has been achieved in SiO2-gated OFETs with PDVT-10 as an organic channel, there are relatively few studies on photoelectric pulse synaptic simulation of electrolyte-gated OFETs based on environmentally friendly and low-voltage operation. Herein, synaptic transistors based on organic semiconductors are reported to simulate the photoelectric pulse response by developing solution-based organic semiconductor PDVT-10, and polyvinyl alcohol (PVA) with an electric double layer (EDL) effect to act as a channel and gate dielectric layer, respectively, and organic lithium salt-doped PVA is used to enhance the EDL effect. The presence of electrical pulses in doped devices not only achieves basic electrical synaptic characteristics, but also significantly realizes the long-term characteristics, pain perception, memory and sensitization applications. Furthermore, the introduction of photoinitiator molecules into the channel layer leads to improved photosynaptic performances by using light-induced free radicals, and the photoelectric synergistic effect has been actualized by introducing heterojunction architecture. This work provides promising prospects for achieving photoelectric pulse modulation based on organic synaptic devices, which shows great potential for the development of artificial intelligence.
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Affiliation(s)
- Yujiao Li
- Field Effect Device & Flexible Display Lab, School of Materials Science and Engineering, Anhui University, Hefei 230601, P. R. China.
| | - Gang He
- Field Effect Device & Flexible Display Lab, School of Materials Science and Engineering, Anhui University, Hefei 230601, P. R. China.
| | - Wenhao Wang
- Field Effect Device & Flexible Display Lab, School of Materials Science and Engineering, Anhui University, Hefei 230601, P. R. China.
| | - Can Fu
- Field Effect Device & Flexible Display Lab, School of Materials Science and Engineering, Anhui University, Hefei 230601, P. R. China.
| | - Shanshan Jiang
- School of Integrated Circuits, Anhui University, Hefei 230601, P. R. China
| | - Elvira Fortunato
- Department of Materials Science/CENIMAT-I3N, Faculty of Sciences and Technology, New University of Lisbon and CEMOP-UNINOVA Campus de Caparica 2829-516 Caparica, Portugal
| | - Rodrigo Martins
- Department of Materials Science/CENIMAT-I3N, Faculty of Sciences and Technology, New University of Lisbon and CEMOP-UNINOVA Campus de Caparica 2829-516 Caparica, Portugal
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13
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Shi J, Lin Y, Wang Z, Shan X, Tao Y, Zhao X, Xu H, Liu Y. Adaptive Processing Enabled by Sodium Alginate Based Complementary Memristor for Neuromorphic Sensory System. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2314156. [PMID: 38822705 DOI: 10.1002/adma.202314156] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/25/2023] [Revised: 05/20/2024] [Indexed: 06/03/2024]
Abstract
Adaptive processing allows sensory systems to autonomically adjust their sensitivity with exposure to a constant sensory stimulus and thus organisms to adapt to environmental variations. Bioinspired electronics with adaptive functions are highly desirable for the development of neuromorphic sensory systems (NSSs). Herein, the functions of desensitization and sensitivity changing with background intensity (i.e., Weber's law), as two fundamental cues of sensory adaptation, are biorealistically demonstrated in an Ag nanowire (NW)-embedded sodium alginate (SA) based complementary memristor. In particular, Weber's law is experimentally emulated in a single complementary memristor. Furthermore, three types of adaptive NSS unit are constructed to realize a multiple perceptual capability that processes the stimuli of illuminance, temperature, and pressure signals. Taking neuromorphic vision as an example, scotopic and photopic adaptation functions are well reproduced for image enhancement against dark and bright backgrounds. Importantly, an NSS system with multisensory integration function is demonstrated by combining light and pressure spikes, where the accuracy of pattern recognition is obviously enhanced relative to that of an individual sense. This work offers a new strategy for developing neuromorphic electronics with adaptive functions and paves the way toward developing a highly efficient NSS.
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Affiliation(s)
- Jiajuan Shi
- Key Laboratory for UV Light-Emitting Materials and Technology (Northeast Normal University), Ministry of Education, 5268 Renmin Street, Changchun, 130024, P. R. China
| | - Ya Lin
- Key Laboratory for UV Light-Emitting Materials and Technology (Northeast Normal University), Ministry of Education, 5268 Renmin Street, Changchun, 130024, P. R. China
| | - Zhongqiang Wang
- Key Laboratory for UV Light-Emitting Materials and Technology (Northeast Normal University), Ministry of Education, 5268 Renmin Street, Changchun, 130024, P. R. China
| | - Xuanyu Shan
- Key Laboratory for UV Light-Emitting Materials and Technology (Northeast Normal University), Ministry of Education, 5268 Renmin Street, Changchun, 130024, P. R. China
| | - Ye Tao
- Key Laboratory for UV Light-Emitting Materials and Technology (Northeast Normal University), Ministry of Education, 5268 Renmin Street, Changchun, 130024, P. R. China
| | - Xiaoning Zhao
- Key Laboratory for UV Light-Emitting Materials and Technology (Northeast Normal University), Ministry of Education, 5268 Renmin Street, Changchun, 130024, P. R. China
| | - Haiyang Xu
- Key Laboratory for UV Light-Emitting Materials and Technology (Northeast Normal University), Ministry of Education, 5268 Renmin Street, Changchun, 130024, P. R. China
| | - Yichun Liu
- Key Laboratory for UV Light-Emitting Materials and Technology (Northeast Normal University), Ministry of Education, 5268 Renmin Street, Changchun, 130024, P. R. China
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14
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Wei H, Gong J, Liu J, He G, Ni Y, Fu C, Yang L, Guo J, Xu Z, Xu W. Thermally and Mechanically Stable Perovskite Artificial Synapse as Tuned by Phase Engineering for Efferent Neuromuscular Control. NANO LETTERS 2024. [PMID: 39023921 DOI: 10.1021/acs.nanolett.4c02240] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 07/20/2024]
Abstract
The doping of perovskites with mixed cations and mixed halides is an effective strategy to optimize phase stability. In this study, we introduce a cubic black phase perovskite CsyFA(1-y)Pb(BrxI(1-x))3 artificial synapse, using phase engineering by adjusting the cesium-bromide content. Low-bromine mixed perovskites are suitable to improve the electric pulse excitation sensitivity and stability of the device. Specifically, the low-bromine and low-cesium mixed perovskite (x = 0.15, y = 0.22) annealed at 373 K allows the device to maintain logic response even after 1000 mechanical flex/flat cycles. The device also shows good thermal stability up to temperatures of 333 K. We have demonstrated reflex-arc behavior with MCMHP synaptic units, capable of making sensory warnings at high frequency. This compositionally engineered, dual-mixed perovskite synaptic device provides significant potential for perceptual soft neurorobotic systems and prostheses.
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Affiliation(s)
| | - Jiangdong Gong
- School of Biomedical Engineering, Division of Life Sciences and Medicine, University of Science and Technology of China, Hefei, Anhui 230026, People's Republic of China
- Center for Intelligent Medical Equipment and Devices, Institute for Innovative Medical Devices, Suzhou Institute for Advanced Research, University of Science and Technology of China, Suzhou, Jiangsu 215123, People's Republic of China
| | - Jiaqi Liu
- Institute of Photoelectronic Thin Film Devices and Technology, Nankai University, Tianjin 300350, People's Republic of China
| | | | - Yao Ni
- School of Integrated Circuits, Guangdong University of Technology, Guangzhou, Guangdong 510006, People's Republic of China
| | | | - Lu Yang
- Institute of Photoelectronic Thin Film Devices and Technology, Nankai University, Tianjin 300350, People's Republic of China
| | - Jiahao Guo
- School of Biomedical Engineering, Division of Life Sciences and Medicine, University of Science and Technology of China, Hefei, Anhui 230026, People's Republic of China
- Center for Intelligent Medical Equipment and Devices, Institute for Innovative Medical Devices, Suzhou Institute for Advanced Research, University of Science and Technology of China, Suzhou, Jiangsu 215123, People's Republic of China
| | - Zhipeng Xu
- Institute of Photoelectronic Thin Film Devices and Technology, Nankai University, Tianjin 300350, People's Republic of China
| | - Wentao Xu
- Institute of Photoelectronic Thin Film Devices and Technology, Nankai University, Tianjin 300350, People's Republic of China
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15
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Sun Y, Wang H, Xie D. Recent Advance in Synaptic Plasticity Modulation Techniques for Neuromorphic Applications. NANO-MICRO LETTERS 2024; 16:211. [PMID: 38842588 PMCID: PMC11156833 DOI: 10.1007/s40820-024-01445-x] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/19/2024] [Accepted: 05/14/2024] [Indexed: 06/07/2024]
Abstract
Manipulating the expression of synaptic plasticity of neuromorphic devices provides fascinating opportunities to develop hardware platforms for artificial intelligence. However, great efforts have been devoted to exploring biomimetic mechanisms of plasticity simulation in the last few years. Recent progress in various plasticity modulation techniques has pushed the research of synaptic electronics from static plasticity simulation to dynamic plasticity modulation, improving the accuracy of neuromorphic computing and providing strategies for implementing neuromorphic sensing functions. Herein, several fascinating strategies for synaptic plasticity modulation through chemical techniques, device structure design, and physical signal sensing are reviewed. For chemical techniques, the underlying mechanisms for the modification of functional materials were clarified and its effect on the expression of synaptic plasticity was also highlighted. Based on device structure design, the reconfigurable operation of neuromorphic devices was well demonstrated to achieve programmable neuromorphic functions. Besides, integrating the sensory units with neuromorphic processing circuits paved a new way to achieve human-like intelligent perception under the modulation of physical signals such as light, strain, and temperature. Finally, considering that the relevant technology is still in the basic exploration stage, some prospects or development suggestions are put forward to promote the development of neuromorphic devices.
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Affiliation(s)
- Yilin Sun
- School of Integrated Circuits and Electronics, Beijing Institute of Technology, Beijing, 100081, People's Republic of China.
| | - Huaipeng Wang
- School of Integrated Circuits, Beijing National Research Center for Information Science and Technology (BNRist), Tsinghua University, Beijing, 100084, People's Republic of China
| | - Dan Xie
- School of Integrated Circuits, Beijing National Research Center for Information Science and Technology (BNRist), Tsinghua University, Beijing, 100084, People's Republic of China.
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16
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Zhang X, Liu D, Liu S, Cai Y, Shan L, Chen C, Chen H, Liu Y, Guo T, Chen H. Toward Intelligent Display with Neuromorphic Technology. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2401821. [PMID: 38567884 DOI: 10.1002/adma.202401821] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/02/2024] [Revised: 03/19/2024] [Indexed: 04/16/2024]
Abstract
In the era of the Internet and the Internet of Things, display technology has evolved significantly toward full-scene display and realistic display. Incorporating "intelligence" into displays is a crucial technical approach to meet the demands of this development. Traditional display technology relies on distributed hardware systems to achieve intelligent displays but encounters challenges stemming from the physical separation of sensing, processing, and light-emitting modules. The high energy consumption and data transformation delays limited the development of intelligence display, breaking the physical separation is crucial to overcoming the bottlenecks of intelligence display technology. Inspired by the biological neural system, neuromorphic technology with all-in-one features is widely employed across various fields. It proves effective in reducing system power consumption, facilitating frequent data transformation, and enabling cross-scene integration. Neuromorphic technology shows great potential to overcome display technology bottlenecks, realizing the full-scene display and realistic display with high efficiency and low power consumption. This review offers a comprehensive summary of recent advancements in the application of neuromorphic technology in displays, with a focus on interoperability. This work delves into its state-of-the-art designs and potential future developments aimed at revolutionizing display technology.
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Affiliation(s)
- Xianghong Zhang
- Institute of Optoelectronic Display, National and Local United Engineering Lab of Flat Panel Display Technology, Fuzhou University, Fuzhou, 350002, China
- Fujian Science and Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou, Fujian, 350100, China
| | - Di Liu
- Institute of Optoelectronic Display, National and Local United Engineering Lab of Flat Panel Display Technology, Fuzhou University, Fuzhou, 350002, China
- Fujian Science and Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou, Fujian, 350100, China
| | - Shuai Liu
- Institute of Optoelectronic Display, National and Local United Engineering Lab of Flat Panel Display Technology, Fuzhou University, Fuzhou, 350002, China
- Fujian Science and Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou, Fujian, 350100, China
| | - Yongjie Cai
- Institute of Optoelectronic Display, National and Local United Engineering Lab of Flat Panel Display Technology, Fuzhou University, Fuzhou, 350002, China
- Fujian Science and Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou, Fujian, 350100, China
| | - Liuting Shan
- Institute of Optoelectronic Display, National and Local United Engineering Lab of Flat Panel Display Technology, Fuzhou University, Fuzhou, 350002, China
- Fujian Science and Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou, Fujian, 350100, China
| | - Cong Chen
- Institute of Optoelectronic Display, National and Local United Engineering Lab of Flat Panel Display Technology, Fuzhou University, Fuzhou, 350002, China
- Fujian Science and Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou, Fujian, 350100, China
| | - Huimei Chen
- Institute of Optoelectronic Display, National and Local United Engineering Lab of Flat Panel Display Technology, Fuzhou University, Fuzhou, 350002, China
- Fujian Science and Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou, Fujian, 350100, China
| | - Yaqian Liu
- School of Electronics and Information, Zhengzhou University of Light Industry, Zhengzhou, Henan, 450002, China
| | - Tailiang Guo
- Institute of Optoelectronic Display, National and Local United Engineering Lab of Flat Panel Display Technology, Fuzhou University, Fuzhou, 350002, China
- Fujian Science and Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou, Fujian, 350100, China
| | - Huipeng Chen
- Institute of Optoelectronic Display, National and Local United Engineering Lab of Flat Panel Display Technology, Fuzhou University, Fuzhou, 350002, China
- Fujian Science and Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou, Fujian, 350100, China
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17
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Deng X, Liu YX, Yang ZZ, Zhao YF, Xu YT, Fu MY, Shen Y, Qu K, Guan Z, Tong WY, Zhang YY, Chen BB, Zhong N, Xiang PH, Duan CG. Spatial evolution of the proton-coupled Mott transition in correlated oxides for neuromorphic computing. SCIENCE ADVANCES 2024; 10:eadk9928. [PMID: 38820158 PMCID: PMC11141630 DOI: 10.1126/sciadv.adk9928] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/22/2023] [Accepted: 04/29/2024] [Indexed: 06/02/2024]
Abstract
The proton-electron coupling effect induces rich spectrums of electronic states in correlated oxides, opening tempting opportunities for exploring novel devices with multifunctions. Here, via modest Pt-aided hydrogen spillover at room temperature, amounts of protons are introduced into SmNiO3-based devices. In situ structural characterizations together with first-principles calculation reveal that the local Mott transition is reversibly driven by migration and redistribution of the predoped protons. The accompanying giant resistance change results in excellent memristive behaviors under ultralow electric fields. Hierarchical tree-like memory states, an instinct displayed in bio-synapses, are further realized in the devices by spatially varying the proton concentration with electric pulses, showing great promise in artificial neural networks for solving intricate problems. Our research demonstrates the direct and effective control of proton evolution using extremely low electric field, offering an alternative pathway for modifying the functionalities of correlated oxides and constructing low-power consumption intelligent devices and neural network circuits.
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Affiliation(s)
- Xing Deng
- Key Laboratory of Polar Materials and Devices (Ministry of Education), Shanghai Center of Brain-Inspired Intelligent Materials and Devices, Department of Electronics, East China Normal University, Shanghai 200241, China
| | - Yu-Xiang Liu
- Key Laboratory of Polar Materials and Devices (Ministry of Education), Shanghai Center of Brain-Inspired Intelligent Materials and Devices, Department of Electronics, East China Normal University, Shanghai 200241, China
| | - Zhen-Zhong Yang
- Key Laboratory of Polar Materials and Devices (Ministry of Education), Shanghai Center of Brain-Inspired Intelligent Materials and Devices, Department of Electronics, East China Normal University, Shanghai 200241, China
| | - Yi-Feng Zhao
- Key Laboratory of Polar Materials and Devices (Ministry of Education), Shanghai Center of Brain-Inspired Intelligent Materials and Devices, Department of Electronics, East China Normal University, Shanghai 200241, China
| | - Ya-Ting Xu
- Key Laboratory of Polar Materials and Devices (Ministry of Education), Shanghai Center of Brain-Inspired Intelligent Materials and Devices, Department of Electronics, East China Normal University, Shanghai 200241, China
| | - Meng-Yao Fu
- Key Laboratory of Polar Materials and Devices (Ministry of Education), Shanghai Center of Brain-Inspired Intelligent Materials and Devices, Department of Electronics, East China Normal University, Shanghai 200241, China
| | - Yu Shen
- Key Laboratory of Polar Materials and Devices (Ministry of Education), Shanghai Center of Brain-Inspired Intelligent Materials and Devices, Department of Electronics, East China Normal University, Shanghai 200241, China
| | - Ke Qu
- Key Laboratory of Polar Materials and Devices (Ministry of Education), Shanghai Center of Brain-Inspired Intelligent Materials and Devices, Department of Electronics, East China Normal University, Shanghai 200241, China
| | - Zhao Guan
- Key Laboratory of Polar Materials and Devices (Ministry of Education), Shanghai Center of Brain-Inspired Intelligent Materials and Devices, Department of Electronics, East China Normal University, Shanghai 200241, China
| | - Wen-Yi Tong
- Key Laboratory of Polar Materials and Devices (Ministry of Education), Shanghai Center of Brain-Inspired Intelligent Materials and Devices, Department of Electronics, East China Normal University, Shanghai 200241, China
| | - Yuan-Yuan Zhang
- Key Laboratory of Polar Materials and Devices (Ministry of Education), Shanghai Center of Brain-Inspired Intelligent Materials and Devices, Department of Electronics, East China Normal University, Shanghai 200241, China
| | - Bin-Bin Chen
- Key Laboratory of Polar Materials and Devices (Ministry of Education), Shanghai Center of Brain-Inspired Intelligent Materials and Devices, Department of Electronics, East China Normal University, Shanghai 200241, China
| | - Ni Zhong
- Key Laboratory of Polar Materials and Devices (Ministry of Education), Shanghai Center of Brain-Inspired Intelligent Materials and Devices, Department of Electronics, East China Normal University, Shanghai 200241, China
- Collaborative Innovation Center of Extreme Optics, Shanxi University, Taiyuan, Shanxi 030006, China
| | - Ping-Hua Xiang
- Key Laboratory of Polar Materials and Devices (Ministry of Education), Shanghai Center of Brain-Inspired Intelligent Materials and Devices, Department of Electronics, East China Normal University, Shanghai 200241, China
- Collaborative Innovation Center of Extreme Optics, Shanxi University, Taiyuan, Shanxi 030006, China
| | - Chun-Gang Duan
- Key Laboratory of Polar Materials and Devices (Ministry of Education), Shanghai Center of Brain-Inspired Intelligent Materials and Devices, Department of Electronics, East China Normal University, Shanghai 200241, China
- Collaborative Innovation Center of Extreme Optics, Shanxi University, Taiyuan, Shanxi 030006, China
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18
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Bag A, Ghosh G, Sultan MJ, Chouhdry HH, Hong SJ, Trung TQ, Kang GY, Lee NE. Bio-Inspired Sensory Receptors for Artificial-Intelligence Perception. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024:e2403150. [PMID: 38699932 DOI: 10.1002/adma.202403150] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/01/2024] [Revised: 04/16/2024] [Indexed: 05/05/2024]
Abstract
In the era of artificial intelligence (AI), there is a growing interest in replicating human sensory perception. Selective and sensitive bio-inspired sensory receptors with synaptic plasticity have recently gained significant attention in developing energy-efficient AI perception. Various bio-inspired sensory receptors and their applications in AI perception are reviewed here. The critical challenges for the future development of bio-inspired sensory receptors are outlined, emphasizing the need for innovative solutions to overcome hurdles in sensor design, integration, and scalability. AI perception can revolutionize various fields, including human-machine interaction, autonomous systems, medical diagnostics, environmental monitoring, industrial optimization, and assistive technologies. As advancements in bio-inspired sensing continue to accelerate, the promise of creating more intelligent and adaptive AI systems becomes increasingly attainable, marking a significant step forward in the evolution of human-like sensory perception.
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Affiliation(s)
- Atanu Bag
- School of Advanced Materials Science & Engineering, Sungkyunkwan University, Suwon, Gyeonggi-do, 16419, Republic of Korea
- Research Centre for Advanced Materials Technology, Sungkyunkwan University, Suwon, Gyeonggi-do, 16419, Republic of Korea
| | - Gargi Ghosh
- School of Advanced Materials Science & Engineering, Sungkyunkwan University, Suwon, Gyeonggi-do, 16419, Republic of Korea
| | - M Junaid Sultan
- School of Advanced Materials Science & Engineering, Sungkyunkwan University, Suwon, Gyeonggi-do, 16419, Republic of Korea
| | - Hamna Haq Chouhdry
- SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University, Suwon, Gyeonggi-do, 16419, Republic of Korea
| | - Seok Ju Hong
- School of Advanced Materials Science & Engineering, Sungkyunkwan University, Suwon, Gyeonggi-do, 16419, Republic of Korea
| | - Tran Quang Trung
- School of Advanced Materials Science & Engineering, Sungkyunkwan University, Suwon, Gyeonggi-do, 16419, Republic of Korea
| | - Geun-Young Kang
- School of Advanced Materials Science & Engineering, Sungkyunkwan University, Suwon, Gyeonggi-do, 16419, Republic of Korea
| | - Nae-Eung Lee
- School of Advanced Materials Science & Engineering, Sungkyunkwan University, Suwon, Gyeonggi-do, 16419, Republic of Korea
- Research Centre for Advanced Materials Technology, Sungkyunkwan University, Suwon, Gyeonggi-do, 16419, Republic of Korea
- SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University, Suwon, Gyeonggi-do, 16419, Republic of Korea
- Samsung Advanced Institute for Health Sciences & Technology (SAIHST), Institute of Quantum Biophysics (IQB) and Biomedical Institute for Convergence at SKKU (BICS), Sungkyunkwan University, Suwon, Gyeonggi-do, 16419, Republic of Korea
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19
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Lee JH, Cho K, Kim JK. Age of Flexible Electronics: Emerging Trends in Soft Multifunctional Sensors. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2310505. [PMID: 38258951 DOI: 10.1002/adma.202310505] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/10/2023] [Revised: 12/27/2023] [Indexed: 01/24/2024]
Abstract
With the commercialization of first-generation flexible mobiles and displays in the late 2010s, humanity has stepped into the age of flexible electronics. Inevitably, soft multifunctional sensors, as essential components of next-generation flexible electronics, have attracted tremendous research interest like never before. This review is dedicated to offering an overview of the latest emerging trends in soft multifunctional sensors and their accordant future research and development (R&D) directions for the coming decade. First, key characteristics and the predominant target stimuli for soft multifunctional sensors are highlighted. Second, important selection criteria for soft multifunctional sensors are introduced. Next, emerging materials/structures and trends for soft multifunctional sensors are identified. Specifically, the future R&D directions of these sensors are envisaged based on their emerging trends, namely i) decoupling of multiple stimuli, ii) data processing, iii) skin conformability, and iv) energy sources. Finally, the challenges and potential opportunities for these sensors in future are discussed, offering new insights into prospects in the fast-emerging technology.
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Affiliation(s)
- Jeng-Hun Lee
- Department of Chemical Engineering, Pohang University of Science and Technology, Pohang, 37673, South Korea
| | - Kilwon Cho
- Department of Chemical Engineering, Pohang University of Science and Technology, Pohang, 37673, South Korea
| | - Jang-Kyo Kim
- Department of Mechanical Engineering, Khalifa University, P. O. Box 127788, Abu Dhabi, United Arab Emirates
- School of Mechanical and Manufacturing Engineering, University of New South Wales, Sydney, NSW, 2052, Australia
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20
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Liu J, Wang Y, Liu Y, Wu Y, Bian B, Shang J, Li R. Recent Progress in Wearable Near-Sensor and In-Sensor Intelligent Perception Systems. SENSORS (BASEL, SWITZERLAND) 2024; 24:2180. [PMID: 38610389 PMCID: PMC11014300 DOI: 10.3390/s24072180] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/02/2024] [Revised: 03/25/2024] [Accepted: 03/27/2024] [Indexed: 04/14/2024]
Abstract
As the Internet of Things (IoT) becomes more widespread, wearable smart systems will begin to be used in a variety of applications in people's daily lives, not only requiring the devices to have excellent flexibility and biocompatibility, but also taking into account redundant data and communication delays due to the use of a large number of sensors. Fortunately, the emerging paradigms of near-sensor and in-sensor computing, together with the proposal of flexible neuromorphic devices, provides a viable solution for the application of intelligent low-power wearable devices. Therefore, wearable smart systems based on new computing paradigms are of great research value. This review discusses the research status of a flexible five-sense sensing system based on near-sensor and in-sensor architectures, considering material design, structural design and circuit design. Furthermore, we summarize challenging problems that need to be solved and provide an outlook on the potential applications of intelligent wearable devices.
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Affiliation(s)
- Jialin Liu
- CAS Key Laboratory of Magnetic Materials and Devices, Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology, Ningbo Institute of Materials Technology and Engineering, China Academy of Sciences, Ningbo 315201, China; (J.L.); (Y.W.); (Y.L.); (Y.W.); (B.B.)
- College of Materials Science and Opto-Electronic Technology, University of China Academy of Sciences, Beijing 100049, China
| | - Yitao Wang
- CAS Key Laboratory of Magnetic Materials and Devices, Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology, Ningbo Institute of Materials Technology and Engineering, China Academy of Sciences, Ningbo 315201, China; (J.L.); (Y.W.); (Y.L.); (Y.W.); (B.B.)
| | - Yiwei Liu
- CAS Key Laboratory of Magnetic Materials and Devices, Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology, Ningbo Institute of Materials Technology and Engineering, China Academy of Sciences, Ningbo 315201, China; (J.L.); (Y.W.); (Y.L.); (Y.W.); (B.B.)
- College of Materials Science and Opto-Electronic Technology, University of China Academy of Sciences, Beijing 100049, China
| | - Yuanzhao Wu
- CAS Key Laboratory of Magnetic Materials and Devices, Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology, Ningbo Institute of Materials Technology and Engineering, China Academy of Sciences, Ningbo 315201, China; (J.L.); (Y.W.); (Y.L.); (Y.W.); (B.B.)
- College of Materials Science and Opto-Electronic Technology, University of China Academy of Sciences, Beijing 100049, China
| | - Baoru Bian
- CAS Key Laboratory of Magnetic Materials and Devices, Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology, Ningbo Institute of Materials Technology and Engineering, China Academy of Sciences, Ningbo 315201, China; (J.L.); (Y.W.); (Y.L.); (Y.W.); (B.B.)
- College of Materials Science and Opto-Electronic Technology, University of China Academy of Sciences, Beijing 100049, China
| | - Jie Shang
- CAS Key Laboratory of Magnetic Materials and Devices, Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology, Ningbo Institute of Materials Technology and Engineering, China Academy of Sciences, Ningbo 315201, China; (J.L.); (Y.W.); (Y.L.); (Y.W.); (B.B.)
- College of Materials Science and Opto-Electronic Technology, University of China Academy of Sciences, Beijing 100049, China
- Materials and Optoelectronics Research Center, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Runwei Li
- CAS Key Laboratory of Magnetic Materials and Devices, Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology, Ningbo Institute of Materials Technology and Engineering, China Academy of Sciences, Ningbo 315201, China; (J.L.); (Y.W.); (Y.L.); (Y.W.); (B.B.)
- College of Materials Science and Opto-Electronic Technology, University of China Academy of Sciences, Beijing 100049, China
- Materials and Optoelectronics Research Center, University of Chinese Academy of Sciences, Beijing 100049, China
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21
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Jiang C, Xu H, Yang L, Liu J, Li Y, Takei K, Xu W. Neuromorphic antennal sensory system. Nat Commun 2024; 15:2109. [PMID: 38453967 PMCID: PMC10920631 DOI: 10.1038/s41467-024-46393-7] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 10/16/2023] [Accepted: 02/26/2024] [Indexed: 03/09/2024] Open
Abstract
Insect antennae facilitate the nuanced detection of vibrations and deflections, and the non-contact perception of magnetic or chemical stimuli, capabilities not found in mammalian skin. Here, we report a neuromorphic antennal sensory system that emulates the structural, functional, and neuronal characteristics of ant antennae. Our system comprises electronic antennae sensor with three-dimensional flexible structures that detects tactile and magnetic stimuli. The integration of artificial synaptic devices adsorbed with solution-processable MoS2 nanoflakes enables synaptic processing of sensory information. By emulating the architecture of receptor-neuron pathway, our system realizes hardware-level, spatiotemporal perception of tactile contact, surface pattern, and magnetic field (detection limits: 1.3 mN, 50 μm, 9.4 mT). Vibrotactile-perception tasks involving profile and texture classifications were accomplished with high accuracy (> 90%), surpassing human performance in "blind" tactile explorations. Magneto-perception tasks including magnetic navigation and touchless interaction were successfully completed. Our work represents a milestone for neuromorphic sensory systems and biomimetic perceptual intelligence.
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Affiliation(s)
- Chengpeng Jiang
- Institute of Photoelectronic Thin Film Devices and Technology, Key Laboratory of Photoelectronic Thin Film Devices and Technology of Tianjin, College of Electronic Information and Optical Engineering, Engineering Research Center of Thin Film Photoelectronic Technology of Ministry of Education, Smart Sensing Interdisciplinary Science Center, Nankai University, Tianjin, China
- Shenzhen Research Institute of Nankai University, Shenzhen, China
| | - Honghuan Xu
- Institute of Photoelectronic Thin Film Devices and Technology, Key Laboratory of Photoelectronic Thin Film Devices and Technology of Tianjin, College of Electronic Information and Optical Engineering, Engineering Research Center of Thin Film Photoelectronic Technology of Ministry of Education, Smart Sensing Interdisciplinary Science Center, Nankai University, Tianjin, China
- Shenzhen Research Institute of Nankai University, Shenzhen, China
| | - Lu Yang
- Institute of Photoelectronic Thin Film Devices and Technology, Key Laboratory of Photoelectronic Thin Film Devices and Technology of Tianjin, College of Electronic Information and Optical Engineering, Engineering Research Center of Thin Film Photoelectronic Technology of Ministry of Education, Smart Sensing Interdisciplinary Science Center, Nankai University, Tianjin, China
- Shenzhen Research Institute of Nankai University, Shenzhen, China
| | - Jiaqi Liu
- Institute of Photoelectronic Thin Film Devices and Technology, Key Laboratory of Photoelectronic Thin Film Devices and Technology of Tianjin, College of Electronic Information and Optical Engineering, Engineering Research Center of Thin Film Photoelectronic Technology of Ministry of Education, Smart Sensing Interdisciplinary Science Center, Nankai University, Tianjin, China
- Shenzhen Research Institute of Nankai University, Shenzhen, China
| | - Yue Li
- Institute of Photoelectronic Thin Film Devices and Technology, Key Laboratory of Photoelectronic Thin Film Devices and Technology of Tianjin, College of Electronic Information and Optical Engineering, Engineering Research Center of Thin Film Photoelectronic Technology of Ministry of Education, Smart Sensing Interdisciplinary Science Center, Nankai University, Tianjin, China
- Shenzhen Research Institute of Nankai University, Shenzhen, China
| | - Kuniharu Takei
- Graduate School of Information Science and Technology, Hokkaido University, Sapporo, Japan.
| | - Wentao Xu
- Institute of Photoelectronic Thin Film Devices and Technology, Key Laboratory of Photoelectronic Thin Film Devices and Technology of Tianjin, College of Electronic Information and Optical Engineering, Engineering Research Center of Thin Film Photoelectronic Technology of Ministry of Education, Smart Sensing Interdisciplinary Science Center, Nankai University, Tianjin, China.
- Shenzhen Research Institute of Nankai University, Shenzhen, China.
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22
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Sun T, Feng B, Huo J, Xiao Y, Wang W, Peng J, Li Z, Du C, Wang W, Zou G, Liu L. Artificial Intelligence Meets Flexible Sensors: Emerging Smart Flexible Sensing Systems Driven by Machine Learning and Artificial Synapses. NANO-MICRO LETTERS 2023; 16:14. [PMID: 37955844 PMCID: PMC10643743 DOI: 10.1007/s40820-023-01235-x] [Citation(s) in RCA: 35] [Impact Index Per Article: 17.5] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/26/2023] [Accepted: 09/24/2023] [Indexed: 11/14/2023]
Abstract
The recent wave of the artificial intelligence (AI) revolution has aroused unprecedented interest in the intelligentialize of human society. As an essential component that bridges the physical world and digital signals, flexible sensors are evolving from a single sensing element to a smarter system, which is capable of highly efficient acquisition, analysis, and even perception of vast, multifaceted data. While challenging from a manual perspective, the development of intelligent flexible sensing has been remarkably facilitated owing to the rapid advances of brain-inspired AI innovations from both the algorithm (machine learning) and the framework (artificial synapses) level. This review presents the recent progress of the emerging AI-driven, intelligent flexible sensing systems. The basic concept of machine learning and artificial synapses are introduced. The new enabling features induced by the fusion of AI and flexible sensing are comprehensively reviewed, which significantly advances the applications such as flexible sensory systems, soft/humanoid robotics, and human activity monitoring. As two of the most profound innovations in the twenty-first century, the deep incorporation of flexible sensing and AI technology holds tremendous potential for creating a smarter world for human beings.
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Affiliation(s)
- Tianming Sun
- Department of Mechanical Engineering, State Key Laboratory of Tribology in Advanced Equipment, Key Laboratory for Advanced Manufacturing by Materials Processing Technology, Ministry of Education of PR China, Tsinghua University, Beijing, 100084, People's Republic of China
- College of Materials Science and Engineering, Shanxi Province, Taiyuan University of Technology, Taiyuan, 030024, People's Republic of China
| | - Bin Feng
- Department of Mechanical Engineering, State Key Laboratory of Tribology in Advanced Equipment, Key Laboratory for Advanced Manufacturing by Materials Processing Technology, Ministry of Education of PR China, Tsinghua University, Beijing, 100084, People's Republic of China
| | - Jinpeng Huo
- Department of Mechanical Engineering, State Key Laboratory of Tribology in Advanced Equipment, Key Laboratory for Advanced Manufacturing by Materials Processing Technology, Ministry of Education of PR China, Tsinghua University, Beijing, 100084, People's Republic of China
| | - Yu Xiao
- Department of Mechanical Engineering, State Key Laboratory of Tribology in Advanced Equipment, Key Laboratory for Advanced Manufacturing by Materials Processing Technology, Ministry of Education of PR China, Tsinghua University, Beijing, 100084, People's Republic of China
| | - Wengan Wang
- Department of Mechanical Engineering, State Key Laboratory of Tribology in Advanced Equipment, Key Laboratory for Advanced Manufacturing by Materials Processing Technology, Ministry of Education of PR China, Tsinghua University, Beijing, 100084, People's Republic of China
| | - Jin Peng
- Department of Mechanical Engineering, State Key Laboratory of Tribology in Advanced Equipment, Key Laboratory for Advanced Manufacturing by Materials Processing Technology, Ministry of Education of PR China, Tsinghua University, Beijing, 100084, People's Republic of China
| | - Zehua Li
- Department of Mechanical Engineering, State Key Laboratory of Tribology in Advanced Equipment, Key Laboratory for Advanced Manufacturing by Materials Processing Technology, Ministry of Education of PR China, Tsinghua University, Beijing, 100084, People's Republic of China
| | - Chengjie Du
- Department of Mechanical Engineering, State Key Laboratory of Tribology in Advanced Equipment, Key Laboratory for Advanced Manufacturing by Materials Processing Technology, Ministry of Education of PR China, Tsinghua University, Beijing, 100084, People's Republic of China
| | - Wenxian Wang
- College of Materials Science and Engineering, Shanxi Province, Taiyuan University of Technology, Taiyuan, 030024, People's Republic of China.
| | - Guisheng Zou
- Department of Mechanical Engineering, State Key Laboratory of Tribology in Advanced Equipment, Key Laboratory for Advanced Manufacturing by Materials Processing Technology, Ministry of Education of PR China, Tsinghua University, Beijing, 100084, People's Republic of China.
| | - Lei Liu
- Department of Mechanical Engineering, State Key Laboratory of Tribology in Advanced Equipment, Key Laboratory for Advanced Manufacturing by Materials Processing Technology, Ministry of Education of PR China, Tsinghua University, Beijing, 100084, People's Republic of China.
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23
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Kweon H, Kim JS, Kim S, Kang H, Kim DJ, Choi H, Roe DG, Choi YJ, Lee SG, Cho JH, Kim DH. Ion trap and release dynamics enables nonintrusive tactile augmentation in monolithic sensory neuron. SCIENCE ADVANCES 2023; 9:eadi3827. [PMID: 37851813 PMCID: PMC10584339 DOI: 10.1126/sciadv.adi3827] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [MESH Headings] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/21/2023] [Accepted: 09/14/2023] [Indexed: 10/20/2023]
Abstract
An iontronic-based artificial tactile nerve is a promising technology for emulating the tactile recognition and learning of human skin with low power consumption. However, its weak tactile memory and complex integration structure remain challenging. We present an ion trap and release dynamics (iTRD)-driven, neuro-inspired monolithic artificial tactile neuron (NeuroMAT) that can achieve tactile perception and memory consolidation in a single device. Through the tactile-driven release of ions initially trapped within iTRD-iongel, NeuroMAT only generates nonintrusive synaptic memory signals when mechanical stress is applied under voltage stimulation. The induced tactile memory is augmented by auxiliary voltage pulses independent of tactile sensing signals. We integrate NeuroMAT with an anthropomorphic robotic hand system to imitate memory-based human motion; the robust tactile memory of NeuroMAT enables the hand to consistently perform reliable gripping motion.
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Affiliation(s)
- Hyukmin Kweon
- Department of Chemical Engineering, Hanyang University, Seoul 04763, Republic of Korea
| | - Joo Sung Kim
- Department of Chemical Engineering, Hanyang University, Seoul 04763, Republic of Korea
| | - Seongchan Kim
- Department of Engineering Science and Mechanics, Pennsylvania State University, University Park, PA 16802, USA
| | - Haisu Kang
- School of Chemical Engineering, Pusan National University, Busan 46241, Republic of Korea
| | - Dong Jun Kim
- Department of Chemical Engineering, Hanyang University, Seoul 04763, Republic of Korea
| | - Hanbin Choi
- Department of Chemical Engineering, Hanyang University, Seoul 04763, Republic of Korea
| | - Dong Gue Roe
- School of Electrical and Electronic Engineering, Yonsei University, Seoul 03722, Republic of Korea
| | - Young Jin Choi
- Department of Chemical and Biomolecular Engineering, Yonsei University, Seoul 03722, Republic of Korea
| | - Seung Geol Lee
- School of Chemical Engineering, Pusan National University, Busan 46241, Republic of Korea
- Department of Organic Material Science and Engineering, Pusan National University, Busan 46241, Republic of Korea
| | - Jeong Ho Cho
- Department of Chemical and Biomolecular Engineering, Yonsei University, Seoul 03722, Republic of Korea
| | - Do Hwan Kim
- Department of Chemical Engineering, Hanyang University, Seoul 04763, Republic of Korea
- Institute of Nano Science and Technology, Hanyang University, Seoul 04763, Republic of Korea
- Clean-Energy Research Institute, Hanyang University, Seoul 04763, Republic of Korea
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24
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Wang X, Yang S, Qin Z, Hu B, Bu L, Lu G. Enhanced Multiwavelength Response of Flexible Synaptic Transistors for Human Sunburned Skin Simulation and Neuromorphic Computation. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023; 35:e2303699. [PMID: 37358823 DOI: 10.1002/adma.202303699] [Citation(s) in RCA: 17] [Impact Index Per Article: 8.5] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/20/2023] [Revised: 06/22/2023] [Indexed: 06/27/2023]
Abstract
In biological species, optogenetics and bioimaging work together to regulate the function of neurons. Similarly, the light-controlled artificial synaptic system not only enhances computational speed but also simulates complex synaptic functions. However, reported synaptic properties are mainly limited to mimicking simple biological functions and single-wavelength responses. Therefore, the development of flexible synaptic devices with multiwavelength optical signal response and multifunctional simulation remains a challenge. Here, flexible organic light-stimulated synaptic transistors (LSSTs) enabled by alumina oxide (AlOX ), with a simple fabrication process, are reported. By embedding AlOX nanoparticles, the excitons separation efficiency is improved, allowing for multiple wavelength responses. Optimized LSSTs can respond to multiple optical and electrical signals in a highly synaptic manner. Multiwavelength optical synaptic plasticity, electrical synaptic plasticity, sunburned skin simulation, learning efficiency model controlled by photoelectric cooperative stimulation, neural network computing, "deer" picture learning and memory functions are successfully proposed, which promote the development for future artificial intelligent systems. Furthermore, as prepared flexible transistors exhibit mechanical flexibility with bending radius down to 2.5 mm and improved photosynaptic plasticity, which facilitating development of neuromorphic computing and multifunction integration systems at the device-level.
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Affiliation(s)
- Xin Wang
- Frontier Institute of Science and Technology, State Key Laboratory of Electrical Insulation and Power Equipment, Xi'an Jiaotong University, Xi'an, 710054, China
| | - Shuting Yang
- School of Chemistry, Xi'an Jiaotong University, Xi'an, 710049, China
| | - Zongze Qin
- Frontier Institute of Science and Technology, State Key Laboratory of Electrical Insulation and Power Equipment, Xi'an Jiaotong University, Xi'an, 710054, China
| | - Bin Hu
- Frontier Institute of Science and Technology, State Key Laboratory of Electrical Insulation and Power Equipment, Xi'an Jiaotong University, Xi'an, 710054, China
| | - Laju Bu
- School of Chemistry, Xi'an Jiaotong University, Xi'an, 710049, China
| | - Guanghao Lu
- Frontier Institute of Science and Technology, State Key Laboratory of Electrical Insulation and Power Equipment, Xi'an Jiaotong University, Xi'an, 710054, China
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25
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Wang X, Ran Y, Li X, Qin X, Lu W, Zhu Y, Lu G. Bio-inspired artificial synaptic transistors: evolution from innovative basic units to system integration. MATERIALS HORIZONS 2023; 10:3269-3292. [PMID: 37312536 DOI: 10.1039/d3mh00216k] [Citation(s) in RCA: 10] [Impact Index Per Article: 5.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
The investigation of transistor-based artificial synapses in bioinspired information processing is undergoing booming exploration, and is the stable building block for brain-like computing. Given that the storage and computing separation architecture of von Neumann construction is not conducive to the current explosive information processing, it is critical to accelerate the connection between hardware systems and software simulations of intelligent synapses. So far, various works based on a transistor-based synaptic system successfully simulated functions similar to biological nerves in the human brain. However, the influence of the semiconductor and the device structural design on synaptic properties is still poorly linked. This review concretely emphasizes the recent advances in the novel structure design of semiconductor materials and devices used in synaptic transistors, not only from a single multifunction synaptic device but also to system application with various connected routes and related working mechanisms. Finally, crises and opportunities in transistor-based synaptic interconnection are discussed and predicted.
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Affiliation(s)
- Xin Wang
- Frontier Institute of Science and Technology, State Key Laboratory of Electrical Insulation and Power Equipment, Xi'an Jiaotong University, Xi'an 710054, P. R. China.
| | - Yixin Ran
- Frontier Institute of Science and Technology, State Key Laboratory of Electrical Insulation and Power Equipment, Xi'an Jiaotong University, Xi'an 710054, P. R. China.
| | - Xiaoqian Li
- Shandong Technology Center of Nanodevices and Integration, School of Microelectronics, Shandong University, Jinan, Shandong Province, 250100, P. R. China
| | - Xinsu Qin
- Frontier Institute of Science and Technology, State Key Laboratory of Electrical Insulation and Power Equipment, Xi'an Jiaotong University, Xi'an 710054, P. R. China.
| | - Wanlong Lu
- Frontier Institute of Science and Technology, State Key Laboratory of Electrical Insulation and Power Equipment, Xi'an Jiaotong University, Xi'an 710054, P. R. China.
| | - Yuanwei Zhu
- Frontier Institute of Science and Technology, State Key Laboratory of Electrical Insulation and Power Equipment, Xi'an Jiaotong University, Xi'an 710054, P. R. China.
| | - Guanghao Lu
- Frontier Institute of Science and Technology, State Key Laboratory of Electrical Insulation and Power Equipment, Xi'an Jiaotong University, Xi'an 710054, P. R. China.
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26
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Assi DS, Huang H, Karthikeyan V, Theja VCS, de Souza MM, Xi N, Li WJ, Roy VAL. Quantum Topological Neuristors for Advanced Neuromorphic Intelligent Systems. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2023; 10:e2300791. [PMID: 37340871 PMCID: PMC10460853 DOI: 10.1002/advs.202300791] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/07/2023] [Revised: 04/02/2023] [Indexed: 06/22/2023]
Abstract
Neuromorphic artificial intelligence systems are the future of ultrahigh performance computing clusters to overcome complex scientific and economical challenges. Despite their importance, the advancement in quantum neuromorphic systems is slow without specific device design. To elucidate biomimicking mammalian brain synapses, a new class of quantum topological neuristors (QTN) with ultralow energy consumption (pJ) and higher switching speed (µs) is introduced. Bioinspired neural network characteristics of QTNs are the effects of edge state transport and tunable energy gap in the quantum topological insulator (QTI) materials. With augmented device and QTI material design, top notch neuromorphic behavior with effective learning-relearning-forgetting stages is demonstrated. Critically, to emulate the real-time neuromorphic efficiency, training of the QTNs is demonstrated with simple hand gesture game by interfacing them with artificial neural networks to perform decision-making operations. Strategically, the QTNs prove the possession of incomparable potential to realize next-gen neuromorphic computing for the development of intelligent machines and humanoids.
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Affiliation(s)
- Dani S. Assi
- Electronics and Nanoscale EngineeringJames Watt School of EngineeringUniversity of GlasgowGlasgowG12 8QQUK
| | - Hongli Huang
- Electronics and Nanoscale EngineeringJames Watt School of EngineeringUniversity of GlasgowGlasgowG12 8QQUK
| | - Vaithinathan Karthikeyan
- Electronics and Nanoscale EngineeringJames Watt School of EngineeringUniversity of GlasgowGlasgowG12 8QQUK
| | - Vaskuri C. S. Theja
- Materials Science and EngineeringCity University of Hong KongTat Chee AvenueHong KongHong Kong
| | | | - Ning Xi
- Industrial and Manufacturing Systems EngineeringThe University of Hong KongPokfulam RoadHong KongHong Kong
| | - Wen Jung Li
- Mechanical EngineeringCity University of Hong KongTat Chee AvenueHong KongHong Kong
| | - Vellaisamy A. L. Roy
- School of Science and TechnologyHong Kong Metropolitan UniversityHo Man TinHong KongHong Kong
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27
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Shao L, Xu X, Liu Y, Zhao Y. Adaptive Memory of a Neuromorphic Transistor with Multi-Sensory Signal Fusion. ACS APPLIED MATERIALS & INTERFACES 2023; 15:35272-35279. [PMID: 37461139 DOI: 10.1021/acsami.3c06429] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 07/28/2023]
Abstract
One of the ultimate goals of artificial intelligence is to achieve the capability of memory evolution and adaptability to changing environments, which is termed adaptive memory. To realize adaptive memory in artificial neuromorphic devices, artificial synapses with multi-sensing capability are required to collect and analyze various sensory cues from the external changing environments. However, due to the lack of platforms for mediating multiple sensory signals, most artificial synapses have been mainly limited to unimodal or bimodal sensory devices. Herein, we present a multi-modal artificial sensory synapse (MASS) based on an organic synapse to realize sensory fusion and adaptive memory. The MASS receives optical, electrical, and pressure information and in turn generates typical synaptic behaviors, mimicking the multi-sensory neurons in the brain. Sophisticated synaptic behaviors, such as Pavlovian dogs, writing/erasing, signal accumulation, and offset, were emulated to demonstrate the joint efforts of bimodal sensory cues. Moreover, associative memory can be formed in the device and be subsequently reshaped by signals from a third perception, mimicking modification of the memory and cognition when encountering a new environment. Our MASS provides a step toward next-generation artificial neural networks with an adaptive memory capability.
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Affiliation(s)
- Lin Shao
- Laboratory of Molecular Materials and Devices, Department of Materials Science, Fudan University, Shanghai 200433, P. R. China
| | - Xinzhao Xu
- Laboratory of Molecular Materials and Devices, Department of Materials Science, Fudan University, Shanghai 200433, P. R. China
| | - Yunqi Liu
- Laboratory of Molecular Materials and Devices, Department of Materials Science, Fudan University, Shanghai 200433, P. R. China
| | - Yan Zhao
- Laboratory of Molecular Materials and Devices, Department of Materials Science, Fudan University, Shanghai 200433, P. R. China
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28
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Kou L, Ye N, Waheed A, Auliya RZ, Wu C, Ooi PC, Li F. High sensitivity and wide response range artificial synapse based on polyimide with embedded graphene quantum dots. Sci Rep 2023; 13:8194. [PMID: 37210533 DOI: 10.1038/s41598-023-35183-8] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 02/22/2023] [Accepted: 05/14/2023] [Indexed: 05/22/2023] Open
Abstract
Artificial electronic synapses are commonly used to simulate biological synapses to realize various learning functions, regarded as one of the key technologies in the next generation of neurological computation. This work used a simple spin coating technique to fabricate polyimide (PI):graphene quantum dots(GQDs) memristor structure. As a result, the devices exhibit remarkably stable exponentially decaying postsynaptic suppression current over time, as interpreted in the spike-timing-dependent plasticity phenomenon. Furthermore, with the increase of the applied electrical signal over time, the conductance of the electrical synapse gradually changes, and the electronic synapse also shows plasticity dependence on the amplitude and frequency of the pulse applied. In particular, the devices with the structure of Ag/PI:GQDs/ITO prepared in this study can produce a stable response to the stimulation of electrical signals between millivolt to volt, showing not only high sensitivity but also a wide range of "feelings", which makes the electronic synapses take a step forwards to emulate biological synapses. Meanwhile, the electronic conduction mechanisms of the device are also studied and expounded in detail. The findings in this work lay a foundation for developing brain-like neuromorphic modeling in artificial intelligence.
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Affiliation(s)
- Lijie Kou
- School of Computing and Information Sciences, Fuzhou Institute of Technology, Fuzhou, 350506, People's Republic of China
- Institute of Microengineering and Nanoelectronics (IMEN), Universiti Kebangsaan Malaysia, 43600, Bangi, Selangor, Malaysia
| | - Nan Ye
- School of Computing and Information Sciences, Fuzhou Institute of Technology, Fuzhou, 350506, People's Republic of China
| | - Anjam Waheed
- Institute of Microengineering and Nanoelectronics (IMEN), Universiti Kebangsaan Malaysia, 43600, Bangi, Selangor, Malaysia
| | - Rahmat Zaki Auliya
- Institute of Microengineering and Nanoelectronics (IMEN), Universiti Kebangsaan Malaysia, 43600, Bangi, Selangor, Malaysia
| | - Chaoxing Wu
- School of Physics and Information Engineering, Fuzhou University, Fuzhou, 350002, People's Republic of China.
| | - Poh Choon Ooi
- Institute of Microengineering and Nanoelectronics (IMEN), Universiti Kebangsaan Malaysia, 43600, Bangi, Selangor, Malaysia.
| | - Fushan Li
- School of Physics and Information Engineering, Fuzhou University, Fuzhou, 350002, People's Republic of China.
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Wang X, Yang H, Li E, Cao C, Zheng W, Chen H, Li W. Stretchable Transistor-Structured Artificial Synapses for Neuromorphic Electronics. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2023; 19:e2205395. [PMID: 36748849 DOI: 10.1002/smll.202205395] [Citation(s) in RCA: 18] [Impact Index Per Article: 9.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/01/2022] [Revised: 01/12/2023] [Indexed: 05/04/2023]
Abstract
Stretchable synaptic transistors, a core technology in neuromorphic electronics, have functions and structures similar to biological synapses and can concurrently transmit signals and learn. Stretchable synaptic transistors are usually soft and stretchy and can accommodate various mechanical deformations, which presents significant prospects in soft machines, electronic skin, human-brain interfaces, and wearable electronics. Considerable efforts have been devoted to developing stretchable synaptic transistors to implement electronic device neuromorphic functions, and remarkable advances have been achieved. Here, this review introduces the basic concept of artificial synaptic transistors and summarizes the recent progress in device structures, functional-layer materials, and fabrication processes. Classical stretchable synaptic transistors, including electric double-layer synaptic transistors, electrochemical synaptic transistors, and optoelectronic synaptic transistors, as well as the applications of stretchable synaptic transistors in light-sensory systems, tactile-sensory systems, and multisensory artificial-nerves systems, are discussed. Finally, the current challenges and potential directions of stretchable synaptic transistors are analyzed. This review presents a detailed introduction to the recent progress in stretchable synaptic transistors from basic concept to applications, providing a reference for the development of stretchable synaptic transistors in the future.
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Affiliation(s)
- Xiumei Wang
- School of Science, Anhui Agricultural University, Hefei, 230036, China
| | - Huihuang Yang
- School of Science, Anhui Agricultural University, Hefei, 230036, China
| | - Enlong Li
- Shanghai Frontiers Science Research Base of Intelligent Optoelectronics and Perception, Institute of Optoelectronics, Department of Materials Science, Fudan University, Shanghai, 200433, China
| | - Chunbin Cao
- School of Science, Anhui Agricultural University, Hefei, 230036, China
| | - Wen Zheng
- School of Science, Anhui Agricultural University, Hefei, 230036, China
- School of Information & Computer, Anhui Agricultural University, Hefei, 230036, China
| | - Huipeng Chen
- Institute of Optoelectronic Display, National & Local United Engineering Lab of Flat Panel Display Technology, Fuzhou University, Fuzhou, 350002, China
- Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou, 350100, China
| | - Wenwu Li
- Shanghai Frontiers Science Research Base of Intelligent Optoelectronics and Perception, Institute of Optoelectronics, Department of Materials Science, Fudan University, Shanghai, 200433, China
- National Key Laboratory of Integrated Circuit Chips and Systems, Zhangjiang Fudan International Innovation Center, Fudan University, Shanghai, 200433, China
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30
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Zeng T, Wang Z, Lin Y, Cheng Y, Shan X, Tao Y, Zhao X, Xu H, Liu Y. Doppler Frequency-Shift Information Processing in WO x -Based Memristive Synapse for Auditory Motion Perception. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2023; 10:e2300030. [PMID: 36862024 PMCID: PMC10161103 DOI: 10.1002/advs.202300030] [Citation(s) in RCA: 6] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/03/2023] [Revised: 02/10/2023] [Indexed: 05/06/2023]
Abstract
Auditory motion perception is one crucial capability to decode and discriminate the spatiotemporal information for neuromorphic auditory systems. Doppler frequency-shift feature and interaural time difference (ITD) are two fundamental cues of auditory information processing. In this work, the functions of azimuth detection and velocity detection, as the typical auditory motion perception, are demonstrated in a WOx -based memristive synapse. The WOx memristor presents both the volatile mode (M1) and semi-nonvolatile mode (M2), which are capable of implementing the high-pass filtering and processing the spike trains with a relative timing and frequency shift. In particular, the Doppler frequency-shift information processing for velocity detection is emulated in the WOx memristor based auditory system for the first time, which relies on a scheme of triplet spike-timing-dependent-plasticity in the memristor. These results provide new opportunities for the mimicry of auditory motion perception and enable the auditory sensory system to be applied in future neuromorphic sensing.
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Affiliation(s)
- Tao Zeng
- Key Laboratory for UV Light-Emitting Materials and Technology (Northeast Normal University), Ministry of Education, 5268 Renmin Street, Changchun, 130024, P. R. China
| | - Zhongqiang Wang
- Key Laboratory for UV Light-Emitting Materials and Technology (Northeast Normal University), Ministry of Education, 5268 Renmin Street, Changchun, 130024, P. R. China
| | - Ya Lin
- Key Laboratory for UV Light-Emitting Materials and Technology (Northeast Normal University), Ministry of Education, 5268 Renmin Street, Changchun, 130024, P. R. China
| | - YanKun Cheng
- Key Laboratory for UV Light-Emitting Materials and Technology (Northeast Normal University), Ministry of Education, 5268 Renmin Street, Changchun, 130024, P. R. China
| | - Xuanyu Shan
- Key Laboratory for UV Light-Emitting Materials and Technology (Northeast Normal University), Ministry of Education, 5268 Renmin Street, Changchun, 130024, P. R. China
| | - Ye Tao
- Key Laboratory for UV Light-Emitting Materials and Technology (Northeast Normal University), Ministry of Education, 5268 Renmin Street, Changchun, 130024, P. R. China
| | - Xiaoning Zhao
- Key Laboratory for UV Light-Emitting Materials and Technology (Northeast Normal University), Ministry of Education, 5268 Renmin Street, Changchun, 130024, P. R. China
| | - Haiyang Xu
- Key Laboratory for UV Light-Emitting Materials and Technology (Northeast Normal University), Ministry of Education, 5268 Renmin Street, Changchun, 130024, P. R. China
| | - Yichun Liu
- Key Laboratory for UV Light-Emitting Materials and Technology (Northeast Normal University), Ministry of Education, 5268 Renmin Street, Changchun, 130024, P. R. China
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31
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Ai L, Pei Y, Song Z, Yong X, Song H, Liu G, Nie M, Waterhouse GIN, Yan X, Lu S. Ligand-Triggered Self-Assembly of Flexible Carbon Dot Nanoribbons for Optoelectronic Memristor Devices and Neuromorphic Computing. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2023; 10:e2207688. [PMID: 36807578 PMCID: PMC10131856 DOI: 10.1002/advs.202207688] [Citation(s) in RCA: 15] [Impact Index Per Article: 7.5] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/25/2023] [Indexed: 05/19/2023]
Abstract
Carbon dots (CDs) are widely utilized in sensing, energy storage, and catalysis due to their excellent optical, electrical and semiconducting properties. However, attempts to optimize their optoelectronic performance through high-order manipulation have met with little success to date. In this study, through efficient packing of individual CDs in two-dimensions, the synthesis of flexible CDs ribbons is demonstrated technically. Electron microscopies and molecular dynamics simulations, show the assembly of CDs into ribbons results from the tripartite balance of π-π attractions, hydrogen bonding, and halogen bonding forces provided by the superficial ligands. The obtained ribbons are flexible and show excellent stability against UV irradiation and heating. CDs ribbons offer outstanding performance as active layer material in transparent flexible memristors, with the developed devices providing excellent data storage, retention capabilities, and fast optoelectronic responses. A memristor device with a thickness of 8 µm shows good data retention capability even after 104 cycles of bending. Furthermore, the device functions effectively as a neuromorphic computing system with integrated storage and computation capabilities, with the response speed of the device being less than 5.5 ns. These properties create an optoelectronic memristor with rapid Chinese character learning capability. This work lays the foundation for wearable artificial intelligence.
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Affiliation(s)
- Lin Ai
- Green Catalysis Center, and College of ChemistryZhengzhou UniversityZhengzhou450000China
| | - Yifei Pei
- Key Laboratory of Brain‐Like Neuromorphic Devices and Systems of Hebei ProvinceCollege of Physics Science & TechnologyHebei UniversityBaoding071002China
| | - Ziqi Song
- Green Catalysis Center, and College of ChemistryZhengzhou UniversityZhengzhou450000China
| | - Xue Yong
- Department of ChemistryUniversity of SheffieldSheffieldS3 7HFUK
| | - Haoqiang Song
- Green Catalysis Center, and College of ChemistryZhengzhou UniversityZhengzhou450000China
| | - Gongjie Liu
- Key Laboratory of Brain‐Like Neuromorphic Devices and Systems of Hebei ProvinceCollege of Physics Science & TechnologyHebei UniversityBaoding071002China
| | - Mingjun Nie
- Green Catalysis Center, and College of ChemistryZhengzhou UniversityZhengzhou450000China
| | | | - Xiaobing Yan
- Key Laboratory of Brain‐Like Neuromorphic Devices and Systems of Hebei ProvinceCollege of Physics Science & TechnologyHebei UniversityBaoding071002China
| | - Siyu Lu
- Green Catalysis Center, and College of ChemistryZhengzhou UniversityZhengzhou450000China
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32
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Ma H, Jiang Q, Ma X, Chen R, Hua K, Yang X, Ge J, Ji J, Xue M. Coaxial Graphene/MXene Microfibers with Interfacial Buffer-Based Lightweight Distance Sensors Assisting Lossless Grasping of Fragile and Deformable Objects. LANGMUIR : THE ACS JOURNAL OF SURFACES AND COLLOIDS 2023; 39:4530-4536. [PMID: 36919933 DOI: 10.1021/acs.langmuir.3c00374] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/18/2023]
Abstract
Lossless and efficient robotic grasping is becoming increasingly important with the widespread application of intelligent robotics in warehouse transportation, human healthcare, and domestic services. However, current sensors for feedback of grasping behavior are greatly restricted by high manufacturing cost, large volume and mass, complex circuit, and signal crosstalk. To solve these problems, here, we prepare lightweight distance sensor-based reduced graphene oxide (rGO)/MXene-rGO coaxial microfibers with interface buffer to assist lossless grasping of a robotic manipulator. The as-fabricated distance microsensor exhibits a high sensitivity of 91.2 m-1 in the distance range of 50-300 μm, a fast response time of 116 ms, a high resolution of 5 μm, and good stability in 500 cycles. Furthermore, the high-performance and lightweight microsensor is installed on the robotic manipulator to reflect the grasp state by the displacement imposed on the sensor. By establishing the correlation between the microsensing signal and the grasp state, the safe, non-destructive, and effective grasp and release of the target can be achieved. The lightweight and high-powered distance sensor displays great application prospects in intelligent fetching, medical surgery, multi-spindle automatic machines, and cultural relics excavation.
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Affiliation(s)
- Hui Ma
- Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Beijing 100190, China
- University of Chinese Academy of Sciences, Beijing 100049, China
| | - Qianqian Jiang
- Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Beijing 100190, China
| | - Xinlei Ma
- Department of Chemistry, Renmin University of China, Beijing 100872, China
| | - Ruoqi Chen
- Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Beijing 100190, China
- University of Chinese Academy of Sciences, Beijing 100049, China
| | - Kun Hua
- Department of Cardiovascular Surgery, Beijing Anzhen Hospital, Capital Medical University, Beijing Institute of Heart, Lung and Blood Vessel Disease, Beijing 100029, China
| | - Xiubin Yang
- Department of Cardiovascular Surgery, Beijing Anzhen Hospital, Capital Medical University, Beijing Institute of Heart, Lung and Blood Vessel Disease, Beijing 100029, China
| | - Jiechao Ge
- Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Beijing 100190, China
| | - Junhui Ji
- Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Beijing 100190, China
| | - Mianqi Xue
- Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Beijing 100190, China
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33
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Jiang C, Liu J, Ni Y, Qu S, Liu L, Li Y, Yang L, Xu W. Mammalian-brain-inspired neuromorphic motion-cognition nerve achieves cross-modal perceptual enhancement. Nat Commun 2023; 14:1344. [PMID: 36906637 PMCID: PMC10008641 DOI: 10.1038/s41467-023-36935-w] [Citation(s) in RCA: 32] [Impact Index Per Article: 16.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 10/03/2022] [Accepted: 02/21/2023] [Indexed: 03/13/2023] Open
Abstract
Perceptual enhancement of neural and behavioral response due to combinations of multisensory stimuli are found in many animal species across different sensory modalities. By mimicking the multisensory integration of ocular-vestibular cues for enhanced spatial perception in macaques, a bioinspired motion-cognition nerve based on a flexible multisensory neuromorphic device is demonstrated. A fast, scalable and solution-processed fabrication strategy is developed to prepare a nanoparticle-doped two-dimensional (2D)-nanoflake thin film, exhibiting superior electrostatic gating capability and charge-carrier mobility. The multi-input neuromorphic device fabricated using this thin film shows history-dependent plasticity, stable linear modulation, and spatiotemporal integration capability. These characteristics ensure parallel, efficient processing of bimodal motion signals encoded as spikes and assigned with different perceptual weights. Motion-cognition function is realized by classifying the motion types using mean firing rates of encoded spikes and postsynaptic current of the device. Demonstrations of recognition of human activity types and drone flight modes reveal that the motion-cognition performance match the bio-plausible principles of perceptual enhancement by multisensory integration. Our system can be potentially applied in sensory robotics and smart wearables.
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Affiliation(s)
- Chengpeng Jiang
- Institute of Photoelectronic Thin Film Devices and Technology, Key Laboratory of Photoelectronic Thin Film Devices and Technology of Tianjin, College of Electronic Information and Optical Engineering, Engineering Research Center of Thin Film Photoelectronic Technology of Ministry of Education, School of Materials Science and Engineering, Smart Sensing Interdisciplinary Science Center, Nankai University, Tianjin, 300350, China.,Shenzhen Research Institute of Nankai University, Shenzhen, 518000, China.,Research Center for Intelligent Sensing, Zhejiang Lab, Hangzhou, 311100, China
| | - Jiaqi Liu
- Institute of Photoelectronic Thin Film Devices and Technology, Key Laboratory of Photoelectronic Thin Film Devices and Technology of Tianjin, College of Electronic Information and Optical Engineering, Engineering Research Center of Thin Film Photoelectronic Technology of Ministry of Education, School of Materials Science and Engineering, Smart Sensing Interdisciplinary Science Center, Nankai University, Tianjin, 300350, China.,Shenzhen Research Institute of Nankai University, Shenzhen, 518000, China
| | - Yao Ni
- Institute of Photoelectronic Thin Film Devices and Technology, Key Laboratory of Photoelectronic Thin Film Devices and Technology of Tianjin, College of Electronic Information and Optical Engineering, Engineering Research Center of Thin Film Photoelectronic Technology of Ministry of Education, School of Materials Science and Engineering, Smart Sensing Interdisciplinary Science Center, Nankai University, Tianjin, 300350, China.,Shenzhen Research Institute of Nankai University, Shenzhen, 518000, China
| | - Shangda Qu
- Institute of Photoelectronic Thin Film Devices and Technology, Key Laboratory of Photoelectronic Thin Film Devices and Technology of Tianjin, College of Electronic Information and Optical Engineering, Engineering Research Center of Thin Film Photoelectronic Technology of Ministry of Education, School of Materials Science and Engineering, Smart Sensing Interdisciplinary Science Center, Nankai University, Tianjin, 300350, China.,Shenzhen Research Institute of Nankai University, Shenzhen, 518000, China
| | - Lu Liu
- Institute of Photoelectronic Thin Film Devices and Technology, Key Laboratory of Photoelectronic Thin Film Devices and Technology of Tianjin, College of Electronic Information and Optical Engineering, Engineering Research Center of Thin Film Photoelectronic Technology of Ministry of Education, School of Materials Science and Engineering, Smart Sensing Interdisciplinary Science Center, Nankai University, Tianjin, 300350, China.,Shenzhen Research Institute of Nankai University, Shenzhen, 518000, China
| | - Yue Li
- Institute of Photoelectronic Thin Film Devices and Technology, Key Laboratory of Photoelectronic Thin Film Devices and Technology of Tianjin, College of Electronic Information and Optical Engineering, Engineering Research Center of Thin Film Photoelectronic Technology of Ministry of Education, School of Materials Science and Engineering, Smart Sensing Interdisciplinary Science Center, Nankai University, Tianjin, 300350, China.,Shenzhen Research Institute of Nankai University, Shenzhen, 518000, China
| | - Lu Yang
- Institute of Photoelectronic Thin Film Devices and Technology, Key Laboratory of Photoelectronic Thin Film Devices and Technology of Tianjin, College of Electronic Information and Optical Engineering, Engineering Research Center of Thin Film Photoelectronic Technology of Ministry of Education, School of Materials Science and Engineering, Smart Sensing Interdisciplinary Science Center, Nankai University, Tianjin, 300350, China.,Shenzhen Research Institute of Nankai University, Shenzhen, 518000, China
| | - Wentao Xu
- Institute of Photoelectronic Thin Film Devices and Technology, Key Laboratory of Photoelectronic Thin Film Devices and Technology of Tianjin, College of Electronic Information and Optical Engineering, Engineering Research Center of Thin Film Photoelectronic Technology of Ministry of Education, School of Materials Science and Engineering, Smart Sensing Interdisciplinary Science Center, Nankai University, Tianjin, 300350, China. .,Shenzhen Research Institute of Nankai University, Shenzhen, 518000, China.
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Sun C, Liu X, Jiang Q, Ye X, Zhu X, Li RW. Emerging electrolyte-gated transistors for neuromorphic perception. SCIENCE AND TECHNOLOGY OF ADVANCED MATERIALS 2023; 24:2162325. [PMID: 36684849 PMCID: PMC9848240 DOI: 10.1080/14686996.2022.2162325] [Citation(s) in RCA: 4] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/03/2022] [Revised: 12/18/2022] [Accepted: 12/21/2022] [Indexed: 05/31/2023]
Abstract
With the rapid development of intelligent robotics, the Internet of Things, and smart sensor technologies, great enthusiasm has been devoted to developing next-generation intelligent systems for the emulation of advanced perception functions of humans. Neuromorphic devices, capable of emulating the learning, memory, analysis, and recognition functions of biological neural systems, offer solutions to intelligently process sensory information. As one of the most important neuromorphic devices, Electrolyte-gated transistors (EGTs) have shown great promise in implementing various vital neural functions and good compatibility with sensors. This review introduces the materials, operating principle, and performances of EGTs, followed by discussing the recent progress of EGTs for synapse and neuron emulation. Integrating EGTs with sensors that faithfully emulate diverse perception functions of humans such as tactile and visual perception is discussed. The challenges of EGTs for further development are given.
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Affiliation(s)
- Cui Sun
- CAS Key Laboratory of Magnetic Materials and Devices, and Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, China
- Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, China
| | - Xuerong Liu
- CAS Key Laboratory of Magnetic Materials and Devices, and Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, China
- Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, China
| | - Qian Jiang
- CAS Key Laboratory of Magnetic Materials and Devices, and Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, China
- Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, China
- College of Materials Sciences and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing, China
| | - Xiaoyu Ye
- CAS Key Laboratory of Magnetic Materials and Devices, and Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, China
- Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, China
- College of Materials Sciences and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing, China
| | - Xiaojian Zhu
- CAS Key Laboratory of Magnetic Materials and Devices, and Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, China
- Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, China
- College of Materials Sciences and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing, China
| | - Run-Wei Li
- CAS Key Laboratory of Magnetic Materials and Devices, and Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, China
- Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, China
- College of Materials Sciences and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing, China
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35
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Bica I, Iacobescu GE, Chirigiu LME. Magneto-Tactile Sensor Based on a Commercial Polyurethane Sponge. NANOMATERIALS (BASEL, SWITZERLAND) 2022; 12:nano12183231. [PMID: 36145019 PMCID: PMC9503655 DOI: 10.3390/nano12183231] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/22/2022] [Revised: 09/12/2022] [Accepted: 09/13/2022] [Indexed: 05/14/2023]
Abstract
In this paper, we present the procedure for fabricating a new magneto-tactile sensor (MTS) based on a low-cost commercial polyurethane sponge, including the experimental test configuration, the experimental process, and a description of the mechanisms that lead to obtaining the MTS and its characteristics. It is shown that by using a polyurethane sponge, microparticles of carbonyl iron, ethanol, and copper foil with electroconductive adhesive, we can obtain a high-performance and low-cost MTS. With the experimental assembly described in this paper, the variation in time of the electrical capacity of the MTS was measured in the presence of a deforming force field, a magnetic field, and a magnetic field superimposed over a deformation field. It is shown that, by using an external magnetic field, the sensitivity of the MTS can be increased. Using the magnetic dipole model and linear elasticity approximation, the qualitative mechanisms leading to the reported results are described in detail.
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Affiliation(s)
- Ioan Bica
- Advanced Environmental Research Institute, West University of Timisoara, Bulevardul Vasile Pârvan 4, Nr. 4, 300223 Timisoara, Romania
| | - Gabriela-Eugenia Iacobescu
- Department of Physics, University of Craiova, Strada Alexandru Ioan Cuza, Nr. 13, 200585 Craiova, Romania
- Correspondence:
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