1
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Zhang Z, Liu J, Wang L, Wei Q, Li M, Bao C, Bian Q. Bias-Switchable Dual-Mode Organic Photodetector with High Operational Stability Using Self-Trapped Cs 3Cu 2I 5 Interfacial Layer. Angew Chem Int Ed Engl 2024; 63:e202404067. [PMID: 38729916 DOI: 10.1002/anie.202404067] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 02/28/2024] [Revised: 04/29/2024] [Accepted: 05/09/2024] [Indexed: 05/12/2024]
Abstract
Conventional photovoltaic (PV)-photodetectors are hard to detect fainted signals, while photomultiplication (PM)-capable devices indispensable for detecting weak light and are prone to degrade under strong light illumination and large bias, and it is urgent to realize highly efficient integrated detecting system with both PM and PV operation modes. In this work, one lead-free Cs3Cu2I5 nanocrystals with self-trapping exciton nature was introduced as interfacial layer adjacent to bulk and layer-by-layer heterojunction structure, and corresponding organic photodetectors with bias-switchable dual modes are demonstrated. The fabricated device exhibits low operating bias (0 V for PV mode and 0.8 V for PM mode), high specific detectivity (~1013 Jones), fast response speed as low as 1.59 μs, large bandwidth over 0.2 MHz and long-term operational stability last for 4 months in ambient condition. This synergy strategy also validated in different materials and device architectures, providing a convenient and scalable production process to develop highly efficient bias-switchable multi-functional organic optoelectrical applications.
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Affiliation(s)
- Zitong Zhang
- Laboratory of Advanced Quantum Bio-optoelectronics (LAQB) State Key Laboratory of Fluorine & Nitrogen Chemicals, Xi'an Modern Chemistry Research Institute, Xi'an, 710065, China
| | - Junchuan Liu
- Key Laboratory of Advanced Display and System Applications of Ministry of Education, Shanghai University, Shanghai, 200072, China
| | - Lin Wang
- Key Laboratory of Advanced Display and System Applications of Ministry of Education, Shanghai University, Shanghai, 200072, China
| | - Qi Wei
- Department of Applied Physics, The Hong Kong Polytechnic University, Hong Kong, 999077, China
| | - Mingjie Li
- Department of Applied Physics, The Hong Kong Polytechnic University, Hong Kong, 999077, China
| | - Chunxiong Bao
- National Laboratory of Solid State Microstructures, School of Physics, Nanjing University, Nanjing, 210093, China
| | - Qingzhen Bian
- Laboratory of Advanced Quantum Bio-optoelectronics (LAQB) State Key Laboratory of Fluorine & Nitrogen Chemicals, Xi'an Modern Chemistry Research Institute, Xi'an, 710065, China
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2
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Yuan M, Qiu Y, Gao H, Feng J, Jiang L, Wu Y. Molecular Electronics: From Nanostructure Assembly to Device Integration. J Am Chem Soc 2024; 146:7885-7904. [PMID: 38483827 DOI: 10.1021/jacs.3c14044] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 03/28/2024]
Abstract
Integrated electronics and optoelectronics based on organic semiconductors have attracted considerable interest in displays, photovoltaics, and biosensing owing to their designable electronic properties, solution processability, and flexibility. Miniaturization and integration of devices are growing trends in molecular electronics and optoelectronics for practical applications, which requires large-scale and versatile assembly strategies for patterning organic micro/nano-structures with simultaneously long-range order, pure orientation, and high resolution. Although various integration methods have been developed in past decades, molecular electronics still needs a versatile platform to avoid defects and disorders due to weak intermolecular interactions in organic materials. In this perspective, a roadmap of organic integration technologies in recent three decades is provided to review the history of molecular electronics. First, we highlight the importance of long-range-ordered molecular packing for achieving exotic electronic and photophysical properties. Second, we classify the strategies for large-scale integration of molecular electronics through the control of nucleation and crystallographic orientation, and evaluate them based on factors of resolution, crystallinity, orientation, scalability, and versatility. Third, we discuss the multifunctional devices and integrated circuits based on organic field-effect transistors (OFETs) and photodetectors. Finally, we explore future research directions and outlines the need for further development of molecular electronics, including assembly of doped organic semiconductors and heterostructures, biological interfaces in molecular electronics and integrated organic logics based on complementary FETs.
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Affiliation(s)
- Meng Yuan
- Key Laboratory of Bio-inspired Materials and Interfacial Science, Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Beijing 100190, P. R. China
- University of Chinese Academy of Sciences (UCAS), Beijing 100049, P. R. China
| | - Yuchen Qiu
- State Key Laboratory of Supramolecular Structure and Materials, College of Chemistry, Jilin University, Changchun 130012, P. R. China
| | - Hanfei Gao
- Suzhou Institute for Advanced Research, University of Science and Technology of China, Suzhou 215123, P. R. China
| | - Jiangang Feng
- Department of Electrical and Computer Engineering, National University of Singapore, Singapore 117583, Singapore
| | - Lei Jiang
- Key Laboratory of Bio-inspired Materials and Interfacial Science, Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Beijing 100190, P. R. China
| | - Yuchen Wu
- Key Laboratory of Bio-inspired Materials and Interfacial Science, Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Beijing 100190, P. R. China
- University of Chinese Academy of Sciences (UCAS), Beijing 100049, P. R. China
- Key Laboratory for Special Functional Materials of Ministry of Education, National and Local Joint Engineering Research Center for High-Efficiency Display and Lighting Technology, Collaborative Innovation Center of Nano Functional Materials and Applications, Henan University, Kaifeng 475004, P. R. China
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3
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Du Z, Luong HM, Sabury S, Jones AL, Zhu Z, Panoy P, Chae S, Yi A, Kim HJ, Xiao S, Brus VV, Manjunatha Reddy GN, Reynolds JR, Nguyen TQ. High-Performance Wearable Organic Photodetectors by Molecular Design and Green Solvent Processing for Pulse Oximetry and Photoplethysmography. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2310478. [PMID: 38054854 DOI: 10.1002/adma.202310478] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/09/2023] [Revised: 11/27/2023] [Indexed: 12/07/2023]
Abstract
White-light detection from the visible to the near-infrared region is central to many applications such as high-speed cameras, autonomous vehicles, and wearable electronics. While organic photodetectors (OPDs) are being developed for such applications, several challenges must be overcome to produce scalable high-detectivity OPDs. This includes issues associated with low responsivity, narrow absorption range, and environmentally friendly device fabrication. Here, an OPD system processed from 2-methyltetrahydrofuran (2-MeTHF) sets a record in light detectivity, which is also comparable with commercially available silicon-based photodiodes is reported. The newly designed OPD is employed in wearable devices to monitor heart rate and blood oxygen saturation using a flexible OPD-based finger pulse oximeter. In achieving this, a framework for a detailed understanding of the structure-processing-property relationship in these OPDs is also developed. The bulk heterojunction (BHJ) thin films processed from 2-MeTHF are characterized at different length scales with advanced techniques. The BHJ morphology exhibits optimal intermixing and phase separation of donor and acceptor moieties, which facilitates the charge generation and collection process. Benefitting from high charge carrier mobilities and a low shunt leakage current, the newly developed OPD exhibits a specific detectivity of above 1012 Jones over 400-900 nm, which is higher than those of reference devices processed from chlorobenzene and ortho-xylene.
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Affiliation(s)
- Zhifang Du
- Center for Polymers and Organic Solids, Department of Chemistry and Biochemistry, University of California at Santa Barbara, Santa Barbara, CA, 93106, USA
| | - Hoang Mai Luong
- Center for Polymers and Organic Solids, Department of Chemistry and Biochemistry, University of California at Santa Barbara, Santa Barbara, CA, 93106, USA
| | - Sina Sabury
- School of Chemistry and Biochemistry, School of Materials Science and Engineering, Center for Organic Photonics and Electronics, Georgia Tech Polymer Network, Georgia Institute of Technology, Atlanta, GA, 30332, USA
| | - Austin L Jones
- School of Chemistry and Biochemistry, School of Materials Science and Engineering, Center for Organic Photonics and Electronics, Georgia Tech Polymer Network, Georgia Institute of Technology, Atlanta, GA, 30332, USA
| | - Ziyue Zhu
- Center for Polymers and Organic Solids, Department of Chemistry and Biochemistry, University of California at Santa Barbara, Santa Barbara, CA, 93106, USA
| | - Patchareepond Panoy
- Center for Polymers and Organic Solids, Department of Chemistry and Biochemistry, University of California at Santa Barbara, Santa Barbara, CA, 93106, USA
| | - Sangmin Chae
- Center for Polymers and Organic Solids, Department of Chemistry and Biochemistry, University of California at Santa Barbara, Santa Barbara, CA, 93106, USA
| | - Ahra Yi
- Department of Organic Materials Science and Engineering, School of Chemical Engineering, Pusan National University, Busan, 46241, Republic of Korea
| | - Hyo Jung Kim
- Department of Organic Materials Science and Engineering, School of Chemical Engineering, Pusan National University, Busan, 46241, Republic of Korea
| | - Steven Xiao
- 1-Material Inc, 2290 Chemin St-Francois, Dorval, Quebec, H9P 1K2, Canada
| | - Viktor V Brus
- Department of Physics, School of Sciences and Humanities, Nazarbayev University, Nur-Sultan City, 010000, Republic of Kazakhstan
| | - G N Manjunatha Reddy
- University of Lille, CNRS, Centrale Lille Institut, Univ. Artois, UMR 8181, Unité de Catalyse et Chimie du Solide, Lille, F-59000, France
| | - John R Reynolds
- School of Chemistry and Biochemistry, School of Materials Science and Engineering, Center for Organic Photonics and Electronics, Georgia Tech Polymer Network, Georgia Institute of Technology, Atlanta, GA, 30332, USA
| | - Thuc-Quyen Nguyen
- Center for Polymers and Organic Solids, Department of Chemistry and Biochemistry, University of California at Santa Barbara, Santa Barbara, CA, 93106, USA
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4
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Kang M, Lee DH, Kim J, Nam G, Baek S, Heo S, Noh Y, Chung DS. Boosting the Performance of Photomultiplication-Type Organic Photodiodes by Embedding CsPbBr 3 Perovskite Nanocrystals. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2024; 11:e2305349. [PMID: 38064157 PMCID: PMC10870029 DOI: 10.1002/advs.202305349] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/03/2023] [Revised: 11/17/2023] [Indexed: 02/17/2024]
Abstract
In this study, it is demonstrated that CsPbBr3 perovskite nanocrystals (NCs) can enhance the overall performances of photomultiplication-type organic photodiodes (PM-OPDs). The proposed approach enables the ionic-polarizable CsPbBr3 NCs to be evenly distributed throughout the depletion region of Schottky junction interface, allowing the entire trapped electrons within the depletion region to be stabilized, in contrast to previously reported interface-limited strategies. The optimized CsPbBr3 -NC-embedded poly(3-hexylthiophene-diyl)-based PM-OPDs exhibit exceptionally high external quantum efficiency, specific detectivity, and gain-bandwidth product of 2,840,000%, 3.97 × 1015 Jones, and 2.14 × 107 Hz, respectively. 2D grazing-incidence X-ray diffraction analyses and drift-diffusion simulations combined with temperature-dependent J-V characteristic analyses are conducted to investigate the physics behind the success of CsPbBr3 -NC-embedded PM-OPDs. The results show that the electrostatic interactions generated by the ionic polarization of NCs effectively stabilize the trapped electrons throughout the entire volume of the photoactive layer, thereby successfully increasing the effective energy depth of the trap states and allowing efficient PM mechanisms. This study demonstrates how a hybrid-photoactive-layer approach can further enhance PM-OPD when the functionality of inorganic inclusions meets the requirements of the target device.
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Affiliation(s)
- Mingyun Kang
- Department of Chemical EngineeringPohang University of Science and Technology (POSTECH)Pohang37673Republic of Korea
| | - Dong Hyeon Lee
- Department of Chemical EngineeringPohang University of Science and Technology (POSTECH)Pohang37673Republic of Korea
| | - Juhee Kim
- Department of Chemical EngineeringPohang University of Science and Technology (POSTECH)Pohang37673Republic of Korea
| | - Geon‐Hee Nam
- Department of Chemical EngineeringPohang University of Science and Technology (POSTECH)Pohang37673Republic of Korea
| | - Seyeon Baek
- Department of Chemical EngineeringPohang University of Science and Technology (POSTECH)Pohang37673Republic of Korea
| | - Seongmin Heo
- Department of Chemical EngineeringPohang University of Science and Technology (POSTECH)Pohang37673Republic of Korea
| | - Yong‐Young Noh
- Department of Chemical EngineeringPohang University of Science and Technology (POSTECH)Pohang37673Republic of Korea
| | - Dae Sung Chung
- Department of Chemical EngineeringPohang University of Science and Technology (POSTECH)Pohang37673Republic of Korea
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5
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Dang Q, Hu L, Yuan L, Miao X, Huang A, Su J, Wang J, Zhou Y, Chen X, Li Q, Li Z, Deng X. Enhanced Gain in Organic Photodetectors Using the Polymer with Singlet Open-Shell Ground State. Angew Chem Int Ed Engl 2023; 62:e202312538. [PMID: 37843416 DOI: 10.1002/anie.202312538] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 08/25/2023] [Revised: 10/15/2023] [Accepted: 10/16/2023] [Indexed: 10/17/2023]
Abstract
Photodetectors are critical components in intelligent optoelectronic systems, and photomultiplication-capable devices are essential for detecting weak optical signals. Despite significant advances, developing photomultiplication-type organic photodetectors with high gain and low noise current simultaneously remains challenging. In this work, a new conjugated polymer PDN with singlet open-shell ground state is introduced in active layers for electron capture, and the corresponding PDN-based photodetectors exhibited an enhanced photoelectric gain and decreased dark current density at a low forward bias. At 1.5 V, the PDN-based ternary photodetector has the external quantum efficiency (EQE) up to 2552.3 % and the specific detectivity of 1.4×1014 Jones at 710 nm calculated by the measured noise current, with the gain 22 times higher than that of the control group. This study provides an approach for exploiting polymers with singlet open-shell ground state to enhance the gain of organic photodetectors.
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Affiliation(s)
- Qianxi Dang
- School of Materials Science and Engineering, Harbin Institute of Technology, Shen Zhen, 518055, China
| | - Lanzhen Hu
- Hubei Key Lab on Organic and Polymeric Opto-Electronic Materials, Department of Chemistry, Wuhan University, Wuhan, 430072, China
| | - Likai Yuan
- Hubei Key Lab on Organic and Polymeric Opto-Electronic Materials, Department of Chemistry, Wuhan University, Wuhan, 430072, China
| | - Xincheng Miao
- School of Materials Science and Engineering, Harbin Institute of Technology, Shen Zhen, 518055, China
| | - Arui Huang
- Hubei Key Lab on Organic and Polymeric Opto-Electronic Materials, Department of Chemistry, Wuhan University, Wuhan, 430072, China
| | - Junsheng Su
- School of Materials Science and Engineering, Harbin Institute of Technology, Shen Zhen, 518055, China
| | - Jiaqiang Wang
- Institute of Molecular Aggregation Science, Tianjin University, Tianjin, 300072, China
| | - Yongheng Zhou
- Department of Electronic and Electrical Engineering, Southern University of Science and Technology, Shen Zhen, 518055, China
| | - Xiaolong Chen
- Department of Electronic and Electrical Engineering, Southern University of Science and Technology, Shen Zhen, 518055, China
| | - Qianqian Li
- Hubei Key Lab on Organic and Polymeric Opto-Electronic Materials, Department of Chemistry, Wuhan University, Wuhan, 430072, China
| | - Zhen Li
- Hubei Key Lab on Organic and Polymeric Opto-Electronic Materials, Department of Chemistry, Wuhan University, Wuhan, 430072, China
- Institute of Molecular Aggregation Science, Tianjin University, Tianjin, 300072, China
| | - Xianyu Deng
- School of Materials Science and Engineering, Harbin Institute of Technology, Shen Zhen, 518055, China
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6
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Ghosh S, Patel M, Lee J, Kim J. All-Oxide Transparent Photodetector Array for Ultrafast Response through Self-Powered Excitonic Photovoltage Operation. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2023; 19:e2301702. [PMID: 37096932 DOI: 10.1002/smll.202301702] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/26/2023] [Revised: 03/26/2023] [Indexed: 05/03/2023]
Abstract
Can photodetectors be transparent and operate in self-powered mode? Is it possible to achieve invisible electronics, independent of the external power supply system, for on-site applications? Here, a ZnO/NiO heterojunction-based high-functional transparent ultraviolet (UV) photodetector operating in the self-powered photovoltaic mode with outstanding responsivity and detectivity values of 6.9 A W-1 and 8.0 × 1012 Jones, respectively, is reported. The highest IUV /Idark value of 8.9 × 104 is attained at a wavelength of 385 nm, together with a very small dark current value of 9.15 × 10-12 A. A large-scale sputtering method is adopted to deposit the heterostructure of n-ZnO and p-NiO sequentially. This deposition instinctively forms an abrupt junction, resulting in a high-quality heterojunction device. Moreover, developing a ZnO/NiO-heterojunction-based 4 × 5 matrix array with an output photovoltage of 4.5 V is preferred for integrating photodetectors into sensing and imaging systems. This transparent UV photodetector exhibits the fastest photo-response time (83 ns) reported for array configurations, which is achieved using an exciton-induced photovoltage based on a neutral donor-bound exciton. Overall, this study provides a simple method for achieving a high-performance large-scale transparent UV photodetector with a self-powered array configuration.
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Affiliation(s)
- Shuvaraj Ghosh
- Photoelectric and Energy Device Application Lab (PEDAL) and Multidisciplinary Core Institute for Future Energies (MCIFE), Incheon National University, Incheon, 22012, South Korea
- Department of Electrical Engineering, Incheon National University, Incheon, 22012, South Korea
| | - Malkeshkumar Patel
- Photoelectric and Energy Device Application Lab (PEDAL) and Multidisciplinary Core Institute for Future Energies (MCIFE), Incheon National University, Incheon, 22012, South Korea
- Department of Electrical Engineering, Incheon National University, Incheon, 22012, South Korea
| | - Junsik Lee
- Photoelectric and Energy Device Application Lab (PEDAL) and Multidisciplinary Core Institute for Future Energies (MCIFE), Incheon National University, Incheon, 22012, South Korea
- Department of Electrical Engineering, Incheon National University, Incheon, 22012, South Korea
| | - Joondong Kim
- Photoelectric and Energy Device Application Lab (PEDAL) and Multidisciplinary Core Institute for Future Energies (MCIFE), Incheon National University, Incheon, 22012, South Korea
- Department of Electrical Engineering, Incheon National University, Incheon, 22012, South Korea
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7
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Weng S, Zhao M, Jiang D, Liang Q. Broadband Organic Ternary Bulk Heterojunctions Photodetector Based on Non-Fullerene Acceptor with Enhanced Flat-Spectrum Response Range from 200 to 1100 nm. J Phys Chem Lett 2022; 13:10577-10588. [PMID: 36346672 DOI: 10.1021/acs.jpclett.2c02756] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/16/2023]
Abstract
Both flat-spectrum responsivity and high external quantum efficiency (EQE) of bulk heterojunction organic photodetectors (BHJ OPDs) are greatly in demand and still challenging to realize from the ultraviolet (UV) to near-infrared (NIR) regions. In this article, conjugated polymer donor poly(3-hexylthiophene) (P3HT) and PTB7-Th are blended with a low band gap nonfullerene acceptor (NFA) IEICO-4F to form a ternary BHJ active layer, thereby forming a BHJ OPD with a broadband responsivity spectrum from UV to visible light to NIR region (200-1100 nm). Under 6 V voltage and in the range from 280 to 810 nm, the ternary BHJ OPD shows a relatively flat responsivity spectrum, and the highest responsivity is 1.348 A/W, which is 1.34 times that of the binary BHJ OPD. Specifically, the ternary BHJ OPD achieved the highest EQE at 285 nm and as high as 449.31%. In addition, the ternary OPD detectivity (D*) is 2.65 times that of the binary BHJ OPD. Therefore, ternary BHJ as an active layer provides an effective method to develop BHJ OPDs with an expanded response range, higher responsivity, improved EQE, and broadband spectrum with flat spectral response from the UV to NIR region.
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Affiliation(s)
- Siyuan Weng
- School of Materials Science and Engineering, Changchun University of Science and Technology, Changchun130022, China
- School of Physical Science and Technology, Shanghai Tech University, Shanghai201210, China
| | - Man Zhao
- School of Materials Science and Engineering, Changchun University of Science and Technology, Changchun130022, China
| | - Dayong Jiang
- School of Materials Science and Engineering, Changchun University of Science and Technology, Changchun130022, China
- Engineering Research Center of Optoelectronic Functional Materials, Ministry of Education, Changchun130022, China
| | - Qingcheng Liang
- School of Materials Science and Engineering, Changchun University of Science and Technology, Changchun130022, China
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8
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Liu M, Fan Q, Yang K, Zhao Z, Zhao X, Zhou Z, Zhang J, Lin F, Jen AKY, Zhang F. Broadband photomultiplication-type polymer photodetectors and its application in light-controlled circuit. Sci China Chem 2022. [DOI: 10.1007/s11426-022-1296-2] [Citation(s) in RCA: 9] [Impact Index Per Article: 4.5] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/17/2022]
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9
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Li T, Hantusch M, Qu J, Bandari VK, Knupfer M, Zhu F, Schmidt OG. On-chip integrated process-programmable sub-10 nm thick molecular devices switching between photomultiplication and memristive behaviour. Nat Commun 2022; 13:2875. [PMID: 35610214 PMCID: PMC9130281 DOI: 10.1038/s41467-022-30498-y] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 11/10/2021] [Accepted: 05/05/2022] [Indexed: 11/24/2022] Open
Abstract
Molecular devices constructed by sub-10 nm thick molecular layers are promising candidates for a new generation of integratable nanoelectronic applications. Here, we report integrated molecular devices based on ultrathin copper phthalocyanine/fullerene hybrid layers with microtubular soft-contacts, which exhibit process-programmable functionality switching between photomultiplication and memristive behaviour. The local electric field at the interface between the polymer bottom electrode and the enclosed molecular channels modulates the ionic-electronic charge interaction and hence determines the transition of the device function. When ions are not driven into the molecular channels at a low interface electric field, photogenerated holes are trapped as electronic space charges, resulting in photomultiplication with a high external quantum efficiency. Once mobile ions are polarized and accumulated as ionic space charges in the molecular channels at a high interface electric field, the molecular devices show ferroelectric-like memristive switching with remarkable resistive ON/OFF and rectification ratios.
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Affiliation(s)
- Tianming Li
- Center for Materials, Architectures and Integration of Nanomembranes (MAIN), Chemnitz University of Technology, 09126, Chemnitz, Germany
- Material Systems for Nanoelectronics, Chemnitz University of Technology, 09107, Chemnitz, Germany
- Institute for Integrative Nanosciences, Leibniz IFW Dresden, 01069, Dresden, Germany
| | - Martin Hantusch
- Institute for Solid State Research, Leibniz IFW Dresden, 01069, Dresden, Germany
| | - Jiang Qu
- Center for Materials, Architectures and Integration of Nanomembranes (MAIN), Chemnitz University of Technology, 09126, Chemnitz, Germany
- Material Systems for Nanoelectronics, Chemnitz University of Technology, 09107, Chemnitz, Germany
- Institute for Integrative Nanosciences, Leibniz IFW Dresden, 01069, Dresden, Germany
| | - Vineeth Kumar Bandari
- Center for Materials, Architectures and Integration of Nanomembranes (MAIN), Chemnitz University of Technology, 09126, Chemnitz, Germany
- Material Systems for Nanoelectronics, Chemnitz University of Technology, 09107, Chemnitz, Germany
- Institute for Integrative Nanosciences, Leibniz IFW Dresden, 01069, Dresden, Germany
| | - Martin Knupfer
- Institute for Solid State Research, Leibniz IFW Dresden, 01069, Dresden, Germany
| | - Feng Zhu
- Center for Materials, Architectures and Integration of Nanomembranes (MAIN), Chemnitz University of Technology, 09126, Chemnitz, Germany.
- Material Systems for Nanoelectronics, Chemnitz University of Technology, 09107, Chemnitz, Germany.
- Institute for Integrative Nanosciences, Leibniz IFW Dresden, 01069, Dresden, Germany.
- State Key Laboratory of Polymer Physics and Chemistry, Changchun Institute of Applied Chemistry, Chinese Academy of Sciences, 130022, Changchun, China.
| | - Oliver G Schmidt
- Center for Materials, Architectures and Integration of Nanomembranes (MAIN), Chemnitz University of Technology, 09126, Chemnitz, Germany.
- Material Systems for Nanoelectronics, Chemnitz University of Technology, 09107, Chemnitz, Germany.
- Institute for Integrative Nanosciences, Leibniz IFW Dresden, 01069, Dresden, Germany.
- School of Science, Dresden University of Technology, 01069, Dresden, Germany.
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10
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Xing S, Kublitski J, Hänisch C, Winkler LC, Li T, Kleemann H, Benduhn J, Leo K. Photomultiplication-Type Organic Photodetectors for Near-Infrared Sensing with High and Bias-Independent Specific Detectivity. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2022; 9:e2105113. [PMID: 34994114 PMCID: PMC8895121 DOI: 10.1002/advs.202105113] [Citation(s) in RCA: 2] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/09/2021] [Revised: 12/09/2021] [Indexed: 06/09/2023]
Abstract
Highly responsive organic photodetectors allow a plethora of applications in fields like imaging, health, security monitoring, etc. Photomultiplication-type organic photodetectors (PM-OPDs) are a desirable option due to their internal amplification mechanism. However, for such devices, significant gain and low dark currents are often mutually excluded since large operation voltages often induce high shot noise. Here, a fully vacuum-processed PM-OPD is demonstrated using trap-assisted electron injection in BDP-OMe:C60 material system. By applying only -1 V, compared with the self-powered working condition, the responsivity is increased by one order of magnitude, resulting in an outstanding specific detectivity of ≈1013 Jones. Remarkably, the superior detectivity in the near-infrared region is stable and almost voltage-independent up to -10 V. Compared with two photovoltaic-type photodetectors, these PM-OPDs exhibit the great potential to be easily integrated with state-of-the-art readout electronics in terms of their high responsivity, fast response speed, and bias-independent specific detectivity. The employed vacuum fabrication process and the easy-to-adapt PM-OPD concept enable seamless upscaling of production, paving the way to a commercially relevant photodetector technology.
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Affiliation(s)
- Shen Xing
- Dresden Integrated Center for Applied Physics and Photonic Materials (IAPP) and Institute for Applied PhysicsTechnische Universität Dresden01187DresdenGermany
| | - Jonas Kublitski
- Dresden Integrated Center for Applied Physics and Photonic Materials (IAPP) and Institute for Applied PhysicsTechnische Universität Dresden01187DresdenGermany
| | - Christian Hänisch
- Dresden Integrated Center for Applied Physics and Photonic Materials (IAPP) and Institute for Applied PhysicsTechnische Universität Dresden01187DresdenGermany
| | - Louis Conrad Winkler
- Dresden Integrated Center for Applied Physics and Photonic Materials (IAPP) and Institute for Applied PhysicsTechnische Universität Dresden01187DresdenGermany
| | - Tian‐yi Li
- Department of Physical ChemistryUniversity of Science and Technology BeijingBeijing100083China
| | - Hans Kleemann
- Dresden Integrated Center for Applied Physics and Photonic Materials (IAPP) and Institute for Applied PhysicsTechnische Universität Dresden01187DresdenGermany
| | - Johannes Benduhn
- Dresden Integrated Center for Applied Physics and Photonic Materials (IAPP) and Institute for Applied PhysicsTechnische Universität Dresden01187DresdenGermany
| | - Karl Leo
- Dresden Integrated Center for Applied Physics and Photonic Materials (IAPP) and Institute for Applied PhysicsTechnische Universität Dresden01187DresdenGermany
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11
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Wang Y, Kublitski J, Xing S, Dollinger F, Spoltore D, Benduhn J, Leo K. Narrowband organic photodetectors - towards miniaturized, spectroscopic sensing. MATERIALS HORIZONS 2022; 9:220-251. [PMID: 34704585 DOI: 10.1039/d1mh01215k] [Citation(s) in RCA: 41] [Impact Index Per Article: 20.5] [Reference Citation Analysis] [Abstract] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
Omnipresent quality monitoring in food products, blood-oxygen measurement in lightweight conformal wrist bands, or data-driven automated industrial production: Innovation in many fields is being empowered by sensor technology. Specifically, organic photodetectors (OPDs) promise great advances due to their beneficial properties and low-cost production. Recent research has led to rapid improvement in all performance parameters of OPDs, which are now on-par or better than their inorganic counterparts, such as silicon or indium gallium arsenide photodetectors, in several aspects. In particular, it is possible to directly design OPDs for specific wavelengths. This makes expensive and bulky optical filters obsolete and allows for miniature detector devices. In this review, recent progress of such narrowband OPDs is systematically summarized covering all aspects from narrow-photo-absorbing materials to device architecture engineering. The recent challenges for narrowband OPDs, like achieving high responsivity, low dark current, high response speed, and good dynamic range are carefully addressed. Finally, application demonstrations covering broadband and narrowband OPDs are discussed. Importantly, several exciting research perspectives, which will stimulate further research on organic-semiconductor-based photodetectors, are pointed out at the very end of this review.
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Affiliation(s)
- Yazhong Wang
- Dresden Integrated Center for Applied Physics and Photonic Materials (IAPP) and Institute for Applied Physics, Technische Universität Dresden, Nöthnitzer Str. 61, 01187 Dresden, Germany.
| | - Jonas Kublitski
- Dresden Integrated Center for Applied Physics and Photonic Materials (IAPP) and Institute for Applied Physics, Technische Universität Dresden, Nöthnitzer Str. 61, 01187 Dresden, Germany.
| | - Shen Xing
- Dresden Integrated Center for Applied Physics and Photonic Materials (IAPP) and Institute for Applied Physics, Technische Universität Dresden, Nöthnitzer Str. 61, 01187 Dresden, Germany.
| | - Felix Dollinger
- Dresden Integrated Center for Applied Physics and Photonic Materials (IAPP) and Institute for Applied Physics, Technische Universität Dresden, Nöthnitzer Str. 61, 01187 Dresden, Germany.
| | - Donato Spoltore
- Dresden Integrated Center for Applied Physics and Photonic Materials (IAPP) and Institute for Applied Physics, Technische Universität Dresden, Nöthnitzer Str. 61, 01187 Dresden, Germany.
| | - Johannes Benduhn
- Dresden Integrated Center for Applied Physics and Photonic Materials (IAPP) and Institute for Applied Physics, Technische Universität Dresden, Nöthnitzer Str. 61, 01187 Dresden, Germany.
| | - Karl Leo
- Dresden Integrated Center for Applied Physics and Photonic Materials (IAPP) and Institute for Applied Physics, Technische Universität Dresden, Nöthnitzer Str. 61, 01187 Dresden, Germany.
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12
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Liu J, Jiang J, Wang S, Li T, Jing X, Liu Y, Wang Y, Wen H, Yao M, Zhan X, Shen L. Fast Response Organic Tandem Photodetector for Visible and Near-Infrared Digital Optical Communications. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2021; 17:e2101316. [PMID: 34114339 DOI: 10.1002/smll.202101316] [Citation(s) in RCA: 10] [Impact Index Per Article: 3.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/04/2021] [Revised: 03/21/2021] [Indexed: 06/12/2023]
Abstract
Organic photodetectors (OPDs), which usually work as photodiodes, photoconductors, or phototransistors, have emerged as candidates for next-generation light sensing. However, low response speed caused by low carrier mobility and resistance-capacitance (RC) time constant, severely hinders the commercialization of OPDs. Herein, the authors demonstrate a state-of-the-art OPD with a record response speed of 146.8 ns by employing tandem structure to simultaneously reduce both the carrier transit time and RC time constant of the device, which is faster than that of previously reported OPDs as far as they know. Moreover, benefitting from the multi-level barrier enhancement and voltage division engendered by tandem structure, an ultralow noise current of 7.82 × 10-14 A Hz-1/2 is obtained, as well as a wide detection range in 300-1000 nm. In addition, the tandem OPDs are successfully integrated into the optical communication system as signal receivers, demonstrating the precise digital signal communication from visible to near-infrared light. It is believed that tandem OPDs have promising application potential in the wireless transmission system.
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Affiliation(s)
- Junshi Liu
- State Key Laboratory of Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, 2699 Qianjin Street, Changchun, 130012, P. R. China
| | - Jizhong Jiang
- State Key Laboratory of Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, 2699 Qianjin Street, Changchun, 130012, P. R. China
| | - Shuangpeng Wang
- Laboratory of the Ministry of Education, Institute of Applied Physics and Materials Engineering, University of Macau, Avenida da Universidade, Taipa, Macao SAR, 999078, P. R. China
| | - Tengfei Li
- School of Materials Science and Engineering, Peking University, Beijing, 100871, P. R. China
| | - Xin Jing
- State Key Laboratory of Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, 2699 Qianjin Street, Changchun, 130012, P. R. China
| | - Yanling Liu
- State Key Laboratory of Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, 2699 Qianjin Street, Changchun, 130012, P. R. China
| | - Yaxi Wang
- State Key Laboratory of Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, 2699 Qianjin Street, Changchun, 130012, P. R. China
| | - Han Wen
- State Key Laboratory of Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, 2699 Qianjin Street, Changchun, 130012, P. R. China
| | - Mengnan Yao
- State Key Laboratory of Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, 2699 Qianjin Street, Changchun, 130012, P. R. China
| | - Xiaowei Zhan
- School of Materials Science and Engineering, Peking University, Beijing, 100871, P. R. China
| | - Liang Shen
- State Key Laboratory of Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, 2699 Qianjin Street, Changchun, 130012, P. R. China
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Kublitski J, Fischer A, Xing S, Baisinger L, Bittrich E, Spoltore D, Benduhn J, Vandewal K, Leo K. Enhancing sub-bandgap external quantum efficiency by photomultiplication for narrowband organic near-infrared photodetectors. Nat Commun 2021; 12:4259. [PMID: 34267210 PMCID: PMC8282846 DOI: 10.1038/s41467-021-24500-2] [Citation(s) in RCA: 37] [Impact Index Per Article: 12.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 11/04/2020] [Accepted: 06/22/2021] [Indexed: 02/06/2023] Open
Abstract
Detection of electromagnetic signals for applications such as health, product quality monitoring or astronomy requires highly responsive and wavelength selective devices. Photomultiplication-type organic photodetectors have been shown to achieve high quantum efficiencies mainly in the visible range. Much less research has been focused on realizing near-infrared narrowband devices. Here, we demonstrate fully vacuum-processed narrow- and broadband photomultiplication-type organic photodetectors. Devices are based on enhanced hole injection leading to a maximum external quantum efficiency of almost 2000% at -10 V for the broadband device. The photomultiplicative effect is also observed in the charge-transfer state absorption region. By making use of an optical cavity device architecture, we enhance the charge-transfer response and demonstrate a wavelength tunable narrowband photomultiplication-type organic photodetector with external quantum efficiencies superior to those of pin-devices. The presented concept can further improve the performance of photodetectors based on the absorption of charge-transfer states, which were so far limited by the low external quantum efficiency provided by these devices.
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Affiliation(s)
- Jonas Kublitski
- Dresden Integrated Center for Applied Physics and Photonic Materials (IAPP) and Institute for Applied Physics, Technische Universität Dresden, Dresden, Germany.
| | - Axel Fischer
- Dresden Integrated Center for Applied Physics and Photonic Materials (IAPP) and Institute for Applied Physics, Technische Universität Dresden, Dresden, Germany
| | - Shen Xing
- Dresden Integrated Center for Applied Physics and Photonic Materials (IAPP) and Institute for Applied Physics, Technische Universität Dresden, Dresden, Germany
| | - Lukasz Baisinger
- Dresden Integrated Center for Applied Physics and Photonic Materials (IAPP) and Institute for Applied Physics, Technische Universität Dresden, Dresden, Germany
| | - Eva Bittrich
- Leibniz-Institut für Polymerforschung Dresden e.V., Dresden, Germany
| | - Donato Spoltore
- Dresden Integrated Center for Applied Physics and Photonic Materials (IAPP) and Institute for Applied Physics, Technische Universität Dresden, Dresden, Germany
| | - Johannes Benduhn
- Dresden Integrated Center for Applied Physics and Photonic Materials (IAPP) and Institute for Applied Physics, Technische Universität Dresden, Dresden, Germany
| | - Koen Vandewal
- Instituut voor Materiaalonderzoek (IMO-IMOMEC), Hasselt University, Diepenbeek, Belgium
| | - Karl Leo
- Dresden Integrated Center for Applied Physics and Photonic Materials (IAPP) and Institute for Applied Physics, Technische Universität Dresden, Dresden, Germany.
- Center for Advancing Electronics Dresden (cfaed), Technische Universität Dresden, Dresden, Germany.
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14
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Yang K, Wang J, Zhao Z, Zhou Z, Liu M, Zhang J, He Z, Zhang F. Smart Strategy: Transparent Hole-Transporting Polymer as a Regulator to Optimize Photomultiplication-type Polymer Photodetectors. ACS APPLIED MATERIALS & INTERFACES 2021; 13:21565-21572. [PMID: 33908768 DOI: 10.1021/acsami.1c06486] [Citation(s) in RCA: 5] [Impact Index Per Article: 1.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
Photomultiplication-type polymer photodetectors (PM-PPDs) were fabricated with hole-only transport active layers containing polymer(s): [6,6]-phenylC61-butyric acid methyl ester (PC61BM) with a weight ratio of 100:2. The rather less PC61BM content in active layers prefers to generate a large amount of isolated electron traps surrounded by polymers. Photogenerated electrons prefer to be trapped by the isolated PC61BM due to the lack of continuous electron-transport channels. The trapped electrons by the isolated PC61BM close to the Al electrode would like to seduce hole tunneling injection. The transparent polymer poly[N,N'-bis(4-butylphenyl)-N,N'-bis(phenyl)benzidine] (poly-TPD) was incorporated as a regulator to improve hole mobility (μh) and adjust the trapped-electron distribution in active layers, leading to the enhanced performance of PM-PPDs. The optimal PM-PPDs were achieved using poly(3-hexylthiophene) (P3HT):poly-TPD:PC61BM (80:20:2, wt/wt/wt) as active layers. External quantum efficiency (EQE) values at 620 nm are 3900 and 1250% for PM-PPDs based on P3HT:poly-TPD:PC61BM (80:20:2, wt/wt/wt) and P3HT:PC61BM (100:2, wt/wt) under -10 V applied voltage, respectively. The EQE at 620 nm of optimal PM-PPDs is improved from 650 to 63,000% along with the applied voltage increase from -5 to -20 V. This work provides a new strategy of using transparent polymer with large μh as a regulator for EQE and response speed improvement, as well as the flattened EQE spectral shape of PM-PPDs.
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Affiliation(s)
- Kaixuan Yang
- School of Science, Beijing Jiaotong University, Beijing 100044, China
| | - Jian Wang
- College of Physics and Electronic Engineering, Taishan University, Taian 271021, Shandong, China
| | - Zijin Zhao
- School of Science, Beijing Jiaotong University, Beijing 100044, China
| | - Zhengji Zhou
- Key Lab for Special Functional Materials, Ministry of Education, National and Local Joint Engineering Research Center for High-Efficiency Display and Lighting Technology, and School of Materials, Henan University, Kaifeng 475004, Henan, China
| | - Ming Liu
- School of Science, Beijing Jiaotong University, Beijing 100044, China
| | - Jian Zhang
- School of Materials Science and Engineering, Guilin University of Electronic Technology, 1st Jinji Road, Guilin 541004, Guangxi, China
| | - Zhiqun He
- School of Science, Beijing Jiaotong University, Beijing 100044, China
| | - Fujun Zhang
- School of Science, Beijing Jiaotong University, Beijing 100044, China
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15
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Yokota T, Fukuda K, Someya T. Recent Progress of Flexible Image Sensors for Biomedical Applications. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2021; 33:e2004416. [PMID: 33527511 DOI: 10.1002/adma.202004416] [Citation(s) in RCA: 50] [Impact Index Per Article: 16.7] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/29/2020] [Revised: 08/29/2020] [Indexed: 06/12/2023]
Abstract
Flexible image sensors have attracted increasing attention as new imaging devices owing to their lightness, softness, and bendability. Since light can measure inside information from outside of the body, optical-imaging-based approaches, such as X-rays, are widely used for disease diagnosis in hospitals. Unlike conventional sensors, flexible image sensors are soft and can be directly attached to a curved surface, such as the skin, for continuous measurement of biometric information with high accuracy. Therefore, they are expected to gain wide application to wearable devices, as well as home medical care. Herein, the application of such sensors to the biomedical field is introduced. First, their individual components, photosensors, and switching elements, are explained. Then, the basic parameters used to evaluate the performance of each of these elements and the image sensors are described. Finally, examples of measuring the dynamic and static biometric information using flexible image sensors, together with relevant real-world measurement cases, are presented. Furthermore, recent applications of the flexible image sensors in the biomedical field are introduced.
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Affiliation(s)
- Tomoyuki Yokota
- Department of Electrical Engineering and Information Systems, Graduate School of Engineering, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo, 113-8656, Japan
| | - Kenjiro Fukuda
- Center for Emergent Matter Science & Thin-Film Device Laboratory, RIKEN, 2-1 Hirosawa, Wako, Saitama, 351-0198, Japan
| | - Takao Someya
- Department of Electrical Engineering and Information Systems, Graduate School of Engineering, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo, 113-8656, Japan
- Center for Emergent Matter Science & Thin-Film Device Laboratory, RIKEN, 2-1 Hirosawa, Wako, Saitama, 351-0198, Japan
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16
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Yang W, Qiu W, Georgitzikis E, Simoen E, Serron J, Lee J, Lieberman I, Cheyns D, Malinowski P, Genoe J, Chen H, Heremans P. Mitigating Dark Current for High-Performance Near-Infrared Organic Photodiodes via Charge Blocking and Defect Passivation. ACS APPLIED MATERIALS & INTERFACES 2021; 13:16766-16774. [PMID: 33820414 DOI: 10.1021/acsami.1c02080] [Citation(s) in RCA: 17] [Impact Index Per Article: 5.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
Thin-film organic near-infrared (NIR) photodiodes can be essential building blocks in the rapidly emerging fields including the internet of things and wearable electronics. However, the demonstration of NIR organic photodiodes with not only high responsivity but also low dark current density that is comparable to that of inorganic photodiodes, for example, below 1 nA cm-2 for silicon photodiodes, remains a challenge. In this work, we have demonstrated non-fullerene acceptor-based NIR photodiodes with an ultralow dark current density of 0.2 nA cm-2 at -2 V by innovating on charge transport layers to mitigate the reverse charge injection and interfacial defect-induced current generation. The same device also shows a high external quantum efficiency approaching 70% at 850 nm and a specific detectivity of over 1013 Jones at wavelengths up to 940 nm. Furthermore, the versatility of our approach for mitigating dark current is demonstrated using a NIR photodetector utilizing different non-fullerene systems. Finally, the practical application of NIR organic photodiodes is demonstrated with an image sensor integrated on a silicon CMOS readout. This work provides new insight into the device stack design of low-dark current NIR organic photodiodes for weak light detection.
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Affiliation(s)
- Weitao Yang
- State Key Laboratory of Silicon Materials, MOE Key Laboratory of Macromolecular, Synthesis and Functionalization, Department of Polymer Science and Engineering, Zhejiang University, Hangzhou 310027, P. R. China
- IMEC, Kapeldreef 75, Leuven 3001, Belgium
- EAST, KU Leuven, Kasteelpark Arenberg, Leuven 3001, Belgium
| | - Weiming Qiu
- IMEC, Kapeldreef 75, Leuven 3001, Belgium
- EAST, KU Leuven, Kasteelpark Arenberg, Leuven 3001, Belgium
| | | | | | | | - Jiwon Lee
- IMEC, Kapeldreef 75, Leuven 3001, Belgium
| | | | | | | | - Jan Genoe
- IMEC, Kapeldreef 75, Leuven 3001, Belgium
- EAST, KU Leuven, Kasteelpark Arenberg, Leuven 3001, Belgium
| | - Hongzheng Chen
- State Key Laboratory of Silicon Materials, MOE Key Laboratory of Macromolecular, Synthesis and Functionalization, Department of Polymer Science and Engineering, Zhejiang University, Hangzhou 310027, P. R. China
| | - Paul Heremans
- IMEC, Kapeldreef 75, Leuven 3001, Belgium
- EAST, KU Leuven, Kasteelpark Arenberg, Leuven 3001, Belgium
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17
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Nie R, Hu M, Risqi AM, Li Z, Seok SI. Efficient and Stable Antimony Selenoiodide Solar Cells. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2021; 8:2003172. [PMID: 33898173 PMCID: PMC8061406 DOI: 10.1002/advs.202003172] [Citation(s) in RCA: 14] [Impact Index Per Article: 4.7] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/19/2020] [Revised: 12/03/2020] [Indexed: 05/16/2023]
Abstract
Although antimony selenoiodide (SbSeI) exhibits a suitable bandgap as well as interesting physicochemical properties, it has not been applied to solar cells. Here the fabrication of SbSeI solar cells is reported for the first time using multiple spin-coating cycles of SbI3 solutions on Sb2Se3 thin layer, which is formed by thermal decomposition after depositing a single-source precursor solution. The performance exhibits a short-circuit current density of 14.8 mA cm-2, an open-circuit voltage of 473.0 mV, and a fill factor of 58.7%, yielding a power conversion efficiency (PCE) of 4.1% under standard air mass 1.5 global (AM 1.5 G, 100 mW cm-2). The cells retain ≈90.0% of the initial PCE even after illuminating under AM 1.5G (100 mW cm-2) for 2321 min. Here, a new approach is provided for combining selenide and iodide as anions, to fabricate highly efficient, highly stable, green, and low-cost solar cells.
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Affiliation(s)
- Riming Nie
- School of Energy and Chemical EngineeringUlsan National Institute of Science and Technology (UNIST)50 UNIST‐gil, Eonyang‐eup, Ulju‐gunUlsan44919Republic of Korea
| | - Manman Hu
- School of Energy and Chemical EngineeringUlsan National Institute of Science and Technology (UNIST)50 UNIST‐gil, Eonyang‐eup, Ulju‐gunUlsan44919Republic of Korea
| | - Andi Muhammad Risqi
- School of Energy and Chemical EngineeringUlsan National Institute of Science and Technology (UNIST)50 UNIST‐gil, Eonyang‐eup, Ulju‐gunUlsan44919Republic of Korea
| | - Zhongping Li
- School of Energy and Chemical EngineeringUlsan National Institute of Science and Technology (UNIST)50 UNIST‐gil, Eonyang‐eup, Ulju‐gunUlsan44919Republic of Korea
| | - Sang Il Seok
- School of Energy and Chemical EngineeringUlsan National Institute of Science and Technology (UNIST)50 UNIST‐gil, Eonyang‐eup, Ulju‐gunUlsan44919Republic of Korea
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18
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Shafian S, Kim K. Panchromatically Responsive Organic Photodiodes utilizing a Noninvasive Narrowband Color Electrode. ACS APPLIED MATERIALS & INTERFACES 2020; 12:53012-53020. [PMID: 33172259 DOI: 10.1021/acsami.0c17183] [Citation(s) in RCA: 4] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
Organic photodiodes (OPDs) are emerging as potential candidates in image sensors owing to their high sensitivity and submicron photoactive layer thickness. For OPDs to be more competitive, it is necessary to develop an economical fabrication process and improve their narrowband spectral response from visible to near-infrared (NIR). In this study, panchromatic OPDs with a remarkable narrowband response from visible to NIR are developed by integrating a solution-processed optical filter-electrode (OF-electrode) and a panchromatic organic photoactive layer. Solution-processable TiO2 nanoparticles (sTNPs) bound to an acetylacetone ligand are used to construct the OF-electrode, which had the structure Ag/sTNP/Ag, and a ternary blend of a polymer donor, a nonfullerene acceptor, and a fullerene acceptor is used for preparing the panchromatic organic photoactive layer. Direct integration of the OF-electrode with the organic photoactive layer eliminates the need for additional OF installation, without damaging the underlying organic photoactive layer. Variation of the sTNP layer thickness controls the color filtering wavelength to vary from visible to NIR, with exceptionally narrow full width at half-maximum (fwhm) values of 48-82 nm and transparency values of 50-70%. Owing to their selective response for the desired color and their capability to minimize noise from other colors, the OPDs exhibit high sensitivity values of 2.82 × 1012, 3.02 × 1012, and 3.94 × 1012 cm Hz0.5/W (Jones) with narrow fwhm values of 110, 91, and 75 nm at a peak transmittance exceeding 65% for blue, green, and red, respectively. Furthermore, they detect NIR light at a wavelength of 950 nm with a narrow fwhm value of 51 nm and a high sensitivity of 3.78 × 1012 cm Hz0.5/W (Jones).
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Affiliation(s)
- Shafidah Shafian
- Department of Chemistry and Nanoscience, Ewha Womans University, Seoul 03760, Korea
| | - Kyungkon Kim
- Department of Chemistry and Nanoscience, Ewha Womans University, Seoul 03760, Korea
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19
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Ouyang L, Armstrong JPK, Chen Q, Lin Y, Stevens MM. Void-free 3D Bioprinting for In-situ Endothelialization and Microfluidic Perfusion. ADVANCED FUNCTIONAL MATERIALS 2020; 30:1909009. [PMID: 35677899 DOI: 10.1002/adfm.201909909] [Citation(s) in RCA: 99] [Impact Index Per Article: 24.8] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/27/2019] [Indexed: 05/21/2023]
Abstract
Two major challenges of 3D bioprinting are the retention of structural fidelity and efficient endothelialization for tissue vascularization. We address both of these issues by introducing a versatile 3D bioprinting strategy, in which a templating bioink is deposited layer-by-layer alongside a matrix bioink to establish void-free multimaterial structures. After crosslinking the matrix phase, the templating phase is sacrificed to create a well-defined 3D network of interconnected tubular channels. This void-free 3D printing (VF-3DP) approach circumvents the traditional concerns of structural collapse, deformation and oxygen inhibition, moreover, it can be readily used to print materials that are widely considered "unprintable". By pre-loading endothelial cells into the templating bioink, the inner surface of the channels can be efficiently cellularized with a confluent endothelial layer. This in-situ endothelialization method can be used to produce endothelium with a far greater uniformity than can be achieved using the conventional post-seeding approach. This VF-3DP approach can also be extended beyond tissue fabrication and towards customized hydrogel-based microfluidics and self-supported perfusable hydrogel constructs.
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Affiliation(s)
- Liliang Ouyang
- Department of Materials, Department of Bioengineering, Institute of Biomedical Engineering, Imperial College London, London, SW7 2AZ, UK
| | - James P K Armstrong
- Department of Materials, Department of Bioengineering, Institute of Biomedical Engineering, Imperial College London, London, SW7 2AZ, UK
| | - Qu Chen
- Department of Materials, Department of Bioengineering, Institute of Biomedical Engineering, Imperial College London, London, SW7 2AZ, UK
| | - Yiyang Lin
- Department of Materials, Department of Bioengineering, Institute of Biomedical Engineering, Imperial College London, London, SW7 2AZ, UK
| | - Molly M Stevens
- Department of Materials, Department of Bioengineering, Institute of Biomedical Engineering, Imperial College London, London, SW7 2AZ, UK
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20
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Liu J, Wen H, Shen L. Highly sensitive, broadband, fast response organic photodetectors based on semi-tandem structure. NANOTECHNOLOGY 2020; 31:214001. [PMID: 32050173 DOI: 10.1088/1361-6528/ab758e] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
Solution-processed organic photodetectors (OPDs) simultaneously integrating high sensitivity, ultrafast response and broadband detection have rarely been achieved so far. Herein, we demonstrate OPDs based on a semi-tandem structure with remarkable performance by solution-processability. The semi-tandem structure directly superimposes two active layers with complementary absorption spectra, achieving a broad spectral response of 300-1000 nm. It provides a detection covering from ultraviolet to near-infrared range, while the external quantum efficiency in the spectral range of 550-950 nm retains 70%. The high electron and hole injection barriers enable a dark current density as low as 6.51 × 10-5 mA cm-2 at -0.1 V, resulting in a noise current of 3.91 × 10-13 A Hz-1/2 at 70 Hz, which is nearly three times lower than single-junction photodetectors. Encouragingly, the device response speed is improved by suppressing the resistance-capacitance time constant of the device employing semi-tandem structure induced capacitance decreasing. The state-of-the-art OPDs contribute to the response time of 26.27 ns, which is the fastest one in OPDs to the best of our knowledge. We believe that the semi-tandem structures provide a new approach to achieving high-performance photodetectors integrating fast, sensitive and broadband response.
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Affiliation(s)
- Junshi Liu
- State Key Laboratory of Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, 2699 Qianjin Street, Changchun 130012, People's Republic of China
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21
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Chow PCY, Someya T. Organic Photodetectors for Next-Generation Wearable Electronics. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2020; 32:e1902045. [PMID: 31373081 DOI: 10.1002/adma.201902045] [Citation(s) in RCA: 166] [Impact Index Per Article: 41.5] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/31/2019] [Revised: 05/20/2019] [Indexed: 05/03/2023]
Abstract
Next-generation wearable electronics will need to be mechanically flexible and stretchable such that they can be conformally attached onto the human body. Photodetectors that are available in today's market are based on rigid inorganic crystalline materials and they have limited mechanical flexibility. In contrast, photodetectors based on organic polymers and molecules have emerged as promising alternatives due to their inherent mechanical softness, ease of processing, tunable optoelectronic properties, good light sensing performance, and biocompatibility. Here, the recent advances of organic photodetectors in terms of both optoelectronic and mechanical properties are outlined and discussed, and their application in wearable electronics including health monitoring sensors, artificial vision, and self-powering integrated devices are highlighted.
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Affiliation(s)
- Philip C Y Chow
- Department of Chemistry, The Hong Kong University of Science and Technology (HKUST), Clear Water Bay, Kowloon, Hong Kong
- HKUST-Shenzhen Research Institute, No. 9 Yuexing 1st Road, Hi-tech Park, Nanshan, Shenzhen, 518057, P. R. China
| | - Takao Someya
- Department of Electrical Engineering and Information Systems, School of Engineering, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo, 113-8656, Japan
- Thin-Film Device Laboratory & Center for Emergent Matter Science (CEMS), RIKEN, 2-1 Hirosawa, Wako, Saitama, 351-0198, Japan
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Xing S, Wang X, Guo E, Kleemann H, Leo K. Organic Thin-Film Red-Light Photodiodes with Tunable Spectral Response Via Selective Exciton Activation. ACS APPLIED MATERIALS & INTERFACES 2020; 12:13061-13067. [PMID: 32088954 DOI: 10.1021/acsami.9b22058] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
Red and near-infrared light detection is vital for numerous applications, including full-color imaging, optical communication, and machine vision. However, this development is hindered by a limited choice of small band gap and narrow-bandwidth materials. Here, we report a device principle with a simple organic planar heterojunction architecture that enables a selective activation of excitons for tuning the photoresponse spectra to fabricate thin-film, filterless, red-light organic photodiodes. A sequential solution-processed active layer is formed by depositing the top layer of PC71BM onto the predeposited bottom layer of doped P3HT. By adjusting the ratio of PTB7 in P3HT, an improved responsivity and a red-shift of the photoresponse peak from 645 to 745 nm are demonstrated simultaneously. Furthermore, the responsivity of 745 nm is enhanced over 5 times with a narrow full width at half-maximum of ∼50 nm at optimized doping ratio compared to the pristine PTB7 device. As a result, a high specific detectivity in excess of 1012 Jones and broad linear dynamic range of 103 dB are achieved. This design concept shows the possibility of realizing tunable red-light selectivity even at relatively thin-film thickness, which is intriguing for the implementation of high-resolution image sensors in the near future.
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Affiliation(s)
- Shen Xing
- Dresden Integrated Center for Applied Physics and Photonic Materials (IAPP), Technische Universität Dresden, 01062 Dresden, Germany
| | - Xiao Wang
- School of Chemistry and Molecular Biosciences, The University of Queensland, Brisbane 4072, Australia
| | - Erjuan Guo
- Dresden Integrated Center for Applied Physics and Photonic Materials (IAPP), Technische Universität Dresden, 01062 Dresden, Germany
| | - Hans Kleemann
- Dresden Integrated Center for Applied Physics and Photonic Materials (IAPP), Technische Universität Dresden, 01062 Dresden, Germany
| | - Karl Leo
- Dresden Integrated Center for Applied Physics and Photonic Materials (IAPP), Technische Universität Dresden, 01062 Dresden, Germany
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23
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Zhao Z, Li C, Shen L, Zhang X, Zhang F. Photomultiplication type organic photodetectors based on electron tunneling injection. NANOSCALE 2020; 12:1091-1099. [PMID: 31845951 DOI: 10.1039/c9nr09926c] [Citation(s) in RCA: 17] [Impact Index Per Article: 4.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
Photomultiplication (PM) type organic photodetectors (OPDs) based on electron tunneling injection are achieved with a specific structure of ITO/ZnO/PC71BM:P3HT (100 : 5, wt/wt)/Au and can work well under forward and reverse bias. A rather low dark current density of the PM type OPDs is obtained due to the large electron injection barrier of 0.7 eV from the ITO electrode or 1.1 eV from the Au electrode, as well as the absence of continuous hole transport channels in the active layers. The external quantum efficiency (EQE) spectral shape of PM type OPDs can be easily adjusted by altering the bias polarity and active layer thickness, which can be well explained by the trapped hole distribution near the ITO and Au electrodes, respectively. The PM type OPDs with 400 nm active layers exhibit the maximum EQE of 3900% and 4900% under 5 V and -5 V bias, respectively. This work firstly achieves PM type OPDs with electron-only transport properties, which has great potential to well match with other organic electronic devices.
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Affiliation(s)
- Zijin Zhao
- Key Laboratory of Luminescence and Optical Information, Ministry of Education, Beijing Jiaotong University, 100044, Beijing, China.
| | - Chenglong Li
- State Key Laboratory of Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, 130012, Changchun, China
| | - Liang Shen
- State Key Laboratory of Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, 130012, Changchun, China
| | - Xiaoli Zhang
- State Centre for International Cooperation on Designer Low-Carbon & Environmental Materials, School of Materials Science and Engineering, Zhengzhou University, 450001, Zhengzhou, China
| | - Fujun Zhang
- Key Laboratory of Luminescence and Optical Information, Ministry of Education, Beijing Jiaotong University, 100044, Beijing, China.
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24
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Nie R, Lee KS, Hu M, Seok SI. Strain Tuning via Larger Cation and Anion Codoping for Efficient and Stable Antimony-Based Solar Cells. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2020; 8:2002391. [PMID: 33437577 PMCID: PMC7788500 DOI: 10.1002/advs.202002391] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 06/25/2020] [Revised: 09/24/2020] [Indexed: 06/12/2023]
Abstract
Strain induced by lattice distortion is one of the key factors that affect the photovoltaic performance via increasing defect densities. The unsatisfied power conversion efficiencies (PCEs) of solar cells based on antimony chalcogenides (Sb-Chs) are owing to their photoexcited carriers being self-trapped by the distortion of Sb2S3 lattice. However, strain behavior in Sb-Chs-based solar cells has not been investigated. Here, strain tuning in Sb-Chs is demonstrated by simultaneously replacing Sb and S with larger Bi and I ions, respectively. Bi/I codoped Sb2S3 cells are fabricated using poly[2,6-(4,4-bis(2-ethylhexyl)-4H-cyclopenta[2,1-b;3,4-b']dithiophene)-alt-4,7-(2,1,3-enzothiadiazole)] as the hole-transporting layer. Codoping reduced the bandgap and rendered a bigger tension strain (1.76 × 10-4) to a relatively smaller compression strain (-1.29 × 10-4). The 2.5 mol% BiI3 doped Sb2S3 cell presented lower trap state energy level than the Sb2S3 cell; moreover, this doping amount effectively passivated the trap states. This codoping shows a similar trend even in the low bandgap Sb2(SxSe1-x)3 cell, resulting in 7.05% PCE under the standard illumination conditions (100 mW cm-2), which is one of the top efficiencies in solution processing Sb2(SxSe1-x)3 solar cells. Furthermore, the doped cells present higher humidity, thermal and photo stability. This study provides a new strategy for stable Pb-free solar cells.
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Affiliation(s)
- Riming Nie
- School of Energy and Chemical EngineeringUlsan National Institute of Science and Technology (UNIST) 50 UNIST‐gilEonyang‐eupUlju‐gunUlsan44919Republic of Korea
| | - Kyoung Su Lee
- School of Energy and Chemical EngineeringUlsan National Institute of Science and Technology (UNIST) 50 UNIST‐gilEonyang‐eupUlju‐gunUlsan44919Republic of Korea
| | - Manman Hu
- School of Energy and Chemical EngineeringUlsan National Institute of Science and Technology (UNIST) 50 UNIST‐gilEonyang‐eupUlju‐gunUlsan44919Republic of Korea
| | - Sang Il Seok
- School of Energy and Chemical EngineeringUlsan National Institute of Science and Technology (UNIST) 50 UNIST‐gilEonyang‐eupUlju‐gunUlsan44919Republic of Korea
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25
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Guo H, Wang Y, Wang R, Liu S, Huang K, Michinobu T, Dong G. Poly(dithiazolfluorene- alt-selenadiazolobenzotriazole)-Based Blue-Light Photodetector and Its Application in Visible-Light Communication. ACS APPLIED MATERIALS & INTERFACES 2019; 11:16758-16764. [PMID: 30990010 DOI: 10.1021/acsami.9b00467] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/09/2023]
Abstract
Conjugated polymers have attracted broad interest from synthetic chemists and device developers in optoelectronic fields. In this study, we report a blue-light organic photodetector (OPD) based on our low-band and ambipolar PSeN polymer. Besides high stability, the device has excellent color-selective property in the visible-light region. At the bias of -3 V, the ratio of the external quantum efficiency (EQE) in blue to red is more than 10:1. Meanwhile, the device also shows very low dark current density of ∼21 nA/cm2 and high EQE more than 100% for blue light at the bias of -3 V. Then, the mechanism of the high EQE in single-sensitive layer structure devices is analyzed by considering the activation energy of traps and carrier injection. Furthermore, for portable purposes, a flexible blue-light OPD is designed. This OPD shows a great orthogonal light response to blue and orange contents in a white light source and will be a potential candidate in a two-channel visible-light communication system.
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Affiliation(s)
| | - Yang Wang
- Department of Materials Science and Engineering , Tokyo Institute of Technology , Meguro-ku, Tokyo 152-8552 , Japan
| | | | | | | | - Tsuyoshi Michinobu
- Department of Materials Science and Engineering , Tokyo Institute of Technology , Meguro-ku, Tokyo 152-8552 , Japan
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26
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Smit B, Hüwe F, Payne N, Olaoye O, Bauer I, Pflaum J, Schwoerer M, Schwoerer H. Ultrafast Pathways of the Photoinduced Insulator-Metal Transition in a Low-Dimensional Organic Conductor. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2019; 31:e1900652. [PMID: 30924203 DOI: 10.1002/adma.201900652] [Citation(s) in RCA: 4] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/27/2019] [Revised: 03/12/2019] [Indexed: 06/09/2023]
Abstract
Among functional organic materials, low-dimensional molecular crystals represent an intriguing class of solids due to their tunable electronic, magnetic, and structural ground states. This work investigates Cu(Me,Br-dicyanoquinonediimine)2 single crystals, a charge transfer radical ion salt which exhibits a Peierls insulator-to-metal transition at low temperatures. The ultrafast electron diffraction experiments observe collective atomic motions at the photoinduced phase transition with a temporal resolution of 1 ps. These measurements reveal the photoinduced lifting of the insulating phase to happen within 2 ps in the entire crystal volume with an external quantum efficiency of conduction band electrons per absorbed photon of larger than 20. This huge cooperativity of the system, directly monitored during the phase transition, is accompanied by specific intramolecular motions. However, only an additional internal volume expansion, corresponding to a pressure relief, allows the metallic state for long times to be optically locked. The identification of the microscopic molecular pathways that optically drive the structural Peierls transition in Cu(DCNQI)2 highlights the tailored response to external stimuli available in these complex functional materials, a feature enabling high-speed optical sensing and switching with outstanding signal responsivity.
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Affiliation(s)
- Bart Smit
- Laser Research Institute, Physics Department, Stellenbosch University, Matieland, 7602, South Africa
| | - Florian Hüwe
- Experimental Physics VI, Julius-Maximilians-Universität, Am Hubland, 97074, Würzburg, Germany
- Bavarian Center for Applied Energy Research (ZAE Bayern e.V.), 97074, Würzburg, Germany
| | - Nancy Payne
- Laser Research Institute, Physics Department, Stellenbosch University, Matieland, 7602, South Africa
| | - Olufemi Olaoye
- Laser Research Institute, Physics Department, Stellenbosch University, Matieland, 7602, South Africa
| | - Irene Bauer
- Physikalisches Institut, Universität Bayreuth, 95440, Bayreuth, Germany
| | - Jens Pflaum
- Experimental Physics VI, Julius-Maximilians-Universität, Am Hubland, 97074, Würzburg, Germany
- Bavarian Center for Applied Energy Research (ZAE Bayern e.V.), 97074, Würzburg, Germany
| | - Markus Schwoerer
- Physikalisches Institut, Universität Bayreuth, 95440, Bayreuth, Germany
| | - Heinrich Schwoerer
- Laser Research Institute, Physics Department, Stellenbosch University, Matieland, 7602, South Africa
- Max Planck Institute for the Structure and Dynamics of Matter, Luruper Chaussee 149, 22761, Hamburg, Germany
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27
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Zhu H, Liu A, Luque HL, Sun H, Ji D, Noh YY. Perovskite and Conjugated Polymer Wrapped Semiconducting Carbon Nanotube Hybrid Films for High-Performance Transistors and Phototransistors. ACS NANO 2019; 13:3971-3981. [PMID: 30844243 DOI: 10.1021/acsnano.8b07567] [Citation(s) in RCA: 28] [Impact Index Per Article: 5.6] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/09/2023]
Abstract
Although organic-inorganic halide perovskites continue to generate considerable interest due to great potentials for various optoelectronic devices, there are some critical obstacles to practical applications, including lead toxicity, relatively low field-effect mobility, and strong hysteresis during operation. This paper proposes a universal approach to significantly improve mobility and operational stability with reduced dual-sweep hysteresis for perovskite-based thin film transistors (TFTs) by coupling low-dimensional lead-free perovskite material (C6H5C2H4NH3)2SnI4 (hereafter abbreviated as (PEA)2SnI4) with embedded conjugated polymer wrapped semiconducting carbon nanotubes (semi-CNTs). In (PEA)2SnI4/semi-CNT hybrid TFTs, semi-CNTs can provide highway-like transport paths, enabling smoother carrier transport with less trapping and scattering. We also demonstrate the performance of (PEA)2SnI4/semi-CNT hybrid phototransistors with ultrahigh photoresponsivity ( R) of 6.3 × 104 A/W and detectivity ( D*) of 1.12 × 1017 Jones, which is about 2 or 3 orders of magnitude higher than that of the best devices available to date. The results indicate promising potentials for solution-processed perovskite/semi-CNT hybrid platforms, and the developed strategy can be applied for high-performance perovskite nanomaterial optoelectronics.
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Affiliation(s)
- Huihui Zhu
- Department of Chemical Engineering , Pohang University of Science and Technology (POSTECH) , 77 Cheongam-Ro, Nam-Gu , Pohang 37673 , Republic of Korea
- Department of Energy and Materials Engineering , Dongguk University , 30 Pildong-ro, 1-gil, Jung-gu , Seoul 04620 , Republic of Korea
| | - Ao Liu
- Department of Chemical Engineering , Pohang University of Science and Technology (POSTECH) , 77 Cheongam-Ro, Nam-Gu , Pohang 37673 , Republic of Korea
- Department of Energy and Materials Engineering , Dongguk University , 30 Pildong-ro, 1-gil, Jung-gu , Seoul 04620 , Republic of Korea
| | - Hector Lopez Luque
- Department of Energy and Materials Engineering , Dongguk University , 30 Pildong-ro, 1-gil, Jung-gu , Seoul 04620 , Republic of Korea
| | - Huabin Sun
- Department of Energy and Materials Engineering , Dongguk University , 30 Pildong-ro, 1-gil, Jung-gu , Seoul 04620 , Republic of Korea
| | - Dongseob Ji
- Department of Chemical Engineering , Pohang University of Science and Technology (POSTECH) , 77 Cheongam-Ro, Nam-Gu , Pohang 37673 , Republic of Korea
- Department of Energy and Materials Engineering , Dongguk University , 30 Pildong-ro, 1-gil, Jung-gu , Seoul 04620 , Republic of Korea
| | - Yong-Young Noh
- Department of Chemical Engineering , Pohang University of Science and Technology (POSTECH) , 77 Cheongam-Ro, Nam-Gu , Pohang 37673 , Republic of Korea
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28
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Kang M, Yoon S, Cho J, Kim J, Chung DS. Reactive Dedoping of Polymer Semiconductors To Boost Self-Powered Schottky Diode Performances. ACS APPLIED MATERIALS & INTERFACES 2019; 11:8365-8373. [PMID: 30714718 DOI: 10.1021/acsami.9b00889] [Citation(s) in RCA: 7] [Impact Index Per Article: 1.4] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/09/2023]
Abstract
A facile and strategic junction tuning technology is reported to boost self-powered organic Schottky photodiode (OPD) performances by synergetic contributions of reactive dedoping effects. It is shown that dedoping poly(3-hexylthiophene-2,5-diyl) (P3HT) films with 1-propylamine (PA) solution significantly reduces not only acceptor-defect density but also intrinsic doping level, leading to dramatically enlarged depletion width of metal/polymer Schottky junctions, as confirmed by ultraviolet photoelectron spectroscopy and Mott-Schottky junction analyses. As a result, whole penetration regions of photons corresponding to absorption bands of P3HT can be fully covered by the depletion region of Schottky junctions, even without the assistance of external electric fields. In addition, it is shown that non-solvent exposure effects of PA dedoping further enable lower paracrystalline disorder and, thus, higher charge carrier mobility, by means of grazing incidence X-ray diffraction, field-effect mobility, and space-charge-limited current analyses. As a result of such synergetic advantages of the PA dedoping method, non-power-driven green-selective OPDs were demonstrated with a high specific detectivity exceeding 6 × 1012 Jones and a low noise-equivalent power of 5.05 × 10-14 W Hz-0.5. Together with a fast temporal response of 26.9 μs and a wide linear dynamic range of 201 dB, the possibility of realizing non-power-driven, near-ideal optimization of solution-processed OPDs with a facile dedoping method is demonstrated.
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Affiliation(s)
- Mingyun Kang
- Department of Energy Science & Engineering , Daegu Gyeongbuk Institute of Science & Technology (DGIST) , Daegu 42988 , Republic of Korea
| | - Seongwon Yoon
- Department of Energy Science & Engineering , Daegu Gyeongbuk Institute of Science & Technology (DGIST) , Daegu 42988 , Republic of Korea
| | - Jangwhan Cho
- Department of Energy Science & Engineering , Daegu Gyeongbuk Institute of Science & Technology (DGIST) , Daegu 42988 , Republic of Korea
| | - Juhee Kim
- Department of Energy Science & Engineering , Daegu Gyeongbuk Institute of Science & Technology (DGIST) , Daegu 42988 , Republic of Korea
| | - Dae Sung Chung
- Department of Energy Science & Engineering , Daegu Gyeongbuk Institute of Science & Technology (DGIST) , Daegu 42988 , Republic of Korea
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29
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Yoon S, Sim KM, Chung DS. Bifunctional Etalon-Electrode To Realize High-Performance Color Filter Free Image Sensor. ACS NANO 2019; 13:2127-2135. [PMID: 30706707 DOI: 10.1021/acsnano.8b08717] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/09/2023]
Abstract
Organic photodiodes (OPDs), based on organic semiconductors with high absorption coefficients for visible light, are emerging as potential candidates for replacing silicon photodiodes in image sensors, particularly due to the possibility of realizing a thin thickness and exclusion of color filters, both of which can contribute to a dramatically enhanced degree of integration for image sensors. Despite years of research, techniques have not yet been developed that allow the OPD itself to have color selectivity while maintaining a thin (<1 μm) OPD thickness, in combination with a sufficiently high detectivity (>1012 cm·Hz0.5/W). To solve this issue, we introduce a concept of "etalon-electrode", which can perform the function of electrode and simultaneously the function of selective wavelength transparency. A strategically designed OPD architecture consisting of an etalon-electrode, a panchromatic organic active layer, and a counter electrode displays well-defined narrowband R-/G-/B-selective detectivity spectra depending on precision-adjusted thickness composition of the etalon-electrode. While a thin thickness of OPD is preserved at less than 800 nm including electrodes, active layer, and other buffer layers for all R-/G-/B-selective OPDs, high average detectivity values over 1012 cm·Hz0.5/W are demonstrated. Furthermore, the characteristic of imparting color selectivity by the etalon-electrode enables a more facile full color patterning, such that a prototype of a 10 × 10 image sensor with a pixel pitch of 500 μm is realized, resulting in accurate picturing of a well-defined full color image.
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Affiliation(s)
- Seongwon Yoon
- Department of Energy Science & Engineering , Daegu Gyeongbuk Institute of Science & Technology (DGIST) , Daegu 42988 , Republic of Korea
| | - Kyu Min Sim
- Department of Energy Science & Engineering , Daegu Gyeongbuk Institute of Science & Technology (DGIST) , Daegu 42988 , Republic of Korea
| | - Dae Sung Chung
- Department of Energy Science & Engineering , Daegu Gyeongbuk Institute of Science & Technology (DGIST) , Daegu 42988 , Republic of Korea
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30
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Kim SH, Lee J, Cho E, Lee J, Yun DJ, Lee D, Kim Y, Ro T, Heo CJ, Lee GH, Jin YW, Kim S, Park KB, Heo S. The role of defects in organic image sensors for green photodiode. Sci Rep 2019; 9:1745. [PMID: 30741952 PMCID: PMC6370835 DOI: 10.1038/s41598-018-36105-9] [Citation(s) in RCA: 6] [Impact Index Per Article: 1.2] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 06/08/2018] [Accepted: 10/26/2018] [Indexed: 11/09/2022] Open
Abstract
Controlling defect states in a buffer layer for organic photo devices is one of the vital factors which have great influence on the device performance. Defect states in silicon oxynitride (SiOxNy) buffer layer for organic photo devices can be controlled by introducing appropriate dopant materials. We performed ab initio simulations to identify the effect on doping SiOxNy with carbon (C), boron (B), and phosphorous (P) atoms. The results unveil that hole defects in the SiOxNy layer diminish with the phosphorous doping. Based on the simulation results, we fabricate the small molecule organic photodetector (OPD) including the phosphorous-doped SiOxNy buffer layer and the active film of blended naphthalene-based donor and C60 acceptor molecules, which shows excellent enhancement in the external quantum efficiency (EQE). The results of our charge-based deep level transient spectroscopy (Q-DLTS) measurements confirmed that the EQE enhancement originates from the decrease of the hole traps induced by the reduced hole defects. The method of controlling the defect states in SiOxNy buffer layers by the doping can be used to improve the performance in various organic photo devices.
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Affiliation(s)
- Seong Heon Kim
- Platform Technology Lab, Samsung Advanced Institute of Technology, 130, Samsung-ro, Yeongtong-gu, Suwon-si, Gyeonggi-do, 443-803, Korea
| | - Jooho Lee
- Platform Technology Lab, Samsung Advanced Institute of Technology, 130, Samsung-ro, Yeongtong-gu, Suwon-si, Gyeonggi-do, 443-803, Korea
| | - Eunae Cho
- Platform Technology Lab, Samsung Advanced Institute of Technology, 130, Samsung-ro, Yeongtong-gu, Suwon-si, Gyeonggi-do, 443-803, Korea
| | - Junho Lee
- Platform Technology Lab, Samsung Advanced Institute of Technology, 130, Samsung-ro, Yeongtong-gu, Suwon-si, Gyeonggi-do, 443-803, Korea
| | - Dong-Jin Yun
- Platform Technology Lab, Samsung Advanced Institute of Technology, 130, Samsung-ro, Yeongtong-gu, Suwon-si, Gyeonggi-do, 443-803, Korea
| | - Dongwook Lee
- Platform Technology Lab, Samsung Advanced Institute of Technology, 130, Samsung-ro, Yeongtong-gu, Suwon-si, Gyeonggi-do, 443-803, Korea
| | - Yongsung Kim
- Platform Technology Lab, Samsung Advanced Institute of Technology, 130, Samsung-ro, Yeongtong-gu, Suwon-si, Gyeonggi-do, 443-803, Korea
| | - Takkyun Ro
- Organic Materials Laboratory, Samsung Advanced Institute of Technology, 130, Samsung-ro, Yeongtong-gu, Suwon-si, Gyeonggi-do, 443-803, Korea
| | - Chul-Joon Heo
- Organic Materials Laboratory, Samsung Advanced Institute of Technology, 130, Samsung-ro, Yeongtong-gu, Suwon-si, Gyeonggi-do, 443-803, Korea
| | - Gae Hwang Lee
- Organic Materials Laboratory, Samsung Advanced Institute of Technology, 130, Samsung-ro, Yeongtong-gu, Suwon-si, Gyeonggi-do, 443-803, Korea
| | - Yong Wan Jin
- Organic Materials Laboratory, Samsung Advanced Institute of Technology, 130, Samsung-ro, Yeongtong-gu, Suwon-si, Gyeonggi-do, 443-803, Korea
| | - Sunghan Kim
- Organic Materials Laboratory, Samsung Advanced Institute of Technology, 130, Samsung-ro, Yeongtong-gu, Suwon-si, Gyeonggi-do, 443-803, Korea
| | - Kyung-Bae Park
- Organic Materials Laboratory, Samsung Advanced Institute of Technology, 130, Samsung-ro, Yeongtong-gu, Suwon-si, Gyeonggi-do, 443-803, Korea.
| | - Sung Heo
- Platform Technology Lab, Samsung Advanced Institute of Technology, 130, Samsung-ro, Yeongtong-gu, Suwon-si, Gyeonggi-do, 443-803, Korea.
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31
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Huo N, Konstantatos G. Recent Progress and Future Prospects of 2D-Based Photodetectors. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2018; 30:e1801164. [PMID: 30066409 DOI: 10.1002/adma.201801164] [Citation(s) in RCA: 148] [Impact Index Per Article: 24.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/19/2018] [Revised: 05/10/2018] [Indexed: 06/08/2023]
Abstract
Conventional semiconductors such as silicon- and indium gallium arsenide (InGaAs)-based photodetectors have encountered a bottleneck in modern electronics and photonics in terms of spectral coverage, low resolution, nontransparency, nonflexibility, and complementary metal-oxide-semiconductor (CMOS) incompatibility. New emerging two-dimensional (2D) materials such as graphene, transition metal dichalcogenides (TMDs), and their hybrid systems thereof, however, can circumvent all these issues benefitting from mechanically flexibility, extraordinary electronic and optical properties, as well as wafer-scale production and integration. Heterojunction-based photodiodes based on 2D materials offer ultrafast and broadband response from the visible to far-infrared range. Phototransistors based on 2D hybrid systems combined with other material platforms such as quantum dots, perovskites, organic materials, or plasmonic nanostructures yield ultrasensitive and broadband light-detection capabilities. Notably the facile integration of 2D photodetectors on silicon photonics or CMOS platforms paves the way toward high-performance, low-cost, broadband sensing and imaging modalities.
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Affiliation(s)
- Nengjie Huo
- ICFO-Institut de Ciencies Fotoniques, The Barcelona Institute of Science and Technology, Castelldefels, 08860, Barcelona, Spain
| | - Gerasimos Konstantatos
- ICFO-Institut de Ciencies Fotoniques, The Barcelona Institute of Science and Technology, Castelldefels, 08860, Barcelona, Spain
- ICREA-Institució Catalana de Recerca i Estudis Avançats, Lluis Companys 23, 08010, Barcelona, Spain
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32
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Abdel-Khalek H, Shalaan E, Abd-El Salam M, El-Mahalawy AM. Effect of illumination intensity on the characteristics of Cu(acac)2/n-Si photodiode. SYNTHETIC METALS 2018; 245:223-236. [DOI: 10.1016/j.synthmet.2018.09.009] [Citation(s) in RCA: 5] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 09/02/2023]
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33
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Shi L, Liang Q, Wang W, Zhang Y, Li G, Ji T, Hao Y, Cui Y. Research Progress in Organic Photomultiplication Photodetectors. NANOMATERIALS 2018; 8:nano8090713. [PMID: 30208639 PMCID: PMC6165393 DOI: 10.3390/nano8090713] [Citation(s) in RCA: 28] [Impact Index Per Article: 4.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 07/31/2018] [Revised: 08/28/2018] [Accepted: 08/31/2018] [Indexed: 01/31/2023]
Abstract
Organic photomultiplication photodetectors have attracted considerable research interest due to their extremely high external quantum efficiency and corresponding high detectivity. Significant progress has been made in the aspects of their structural design and performance improvement in the past few years. There are two types of organic photomultiplication photodetectors, which are made of organic small molecular compounds and polymers. In this paper, the research progress in each type of organic photomultiplication photodetectors based on the trap assisted carrier tunneling effect is reviewed in detail. In addition, other mechanisms for the photomultiplication processes in organic devices are introduced. Finally, the paper is summarized and the prospects of future research into organic photomultiplication photodetectors are discussed.
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Affiliation(s)
- Linlin Shi
- Key Laboratory of Advanced Transducers and Intelligent Control System of Ministry of Education, College of Physics and Optoelectronics, Taiyuan University of Technology, Taiyuan 030024, China.
| | - Qiangbing Liang
- Key Laboratory of Advanced Transducers and Intelligent Control System of Ministry of Education, College of Physics and Optoelectronics, Taiyuan University of Technology, Taiyuan 030024, China.
| | - Wenyan Wang
- Key Laboratory of Advanced Transducers and Intelligent Control System of Ministry of Education, College of Physics and Optoelectronics, Taiyuan University of Technology, Taiyuan 030024, China.
| | - Ye Zhang
- Key Laboratory of Advanced Transducers and Intelligent Control System of Ministry of Education, College of Physics and Optoelectronics, Taiyuan University of Technology, Taiyuan 030024, China.
| | - Guohui Li
- Key Laboratory of Advanced Transducers and Intelligent Control System of Ministry of Education, College of Physics and Optoelectronics, Taiyuan University of Technology, Taiyuan 030024, China.
| | - Ting Ji
- Key Laboratory of Advanced Transducers and Intelligent Control System of Ministry of Education, College of Physics and Optoelectronics, Taiyuan University of Technology, Taiyuan 030024, China.
| | - Yuying Hao
- Key Laboratory of Advanced Transducers and Intelligent Control System of Ministry of Education, College of Physics and Optoelectronics, Taiyuan University of Technology, Taiyuan 030024, China.
- Key Laboratory of Interface Science and Engineering in Advanced Materials, Taiyuan University of Technology, Taiyuan 030024, China.
| | - Yanxia Cui
- Key Laboratory of Advanced Transducers and Intelligent Control System of Ministry of Education, College of Physics and Optoelectronics, Taiyuan University of Technology, Taiyuan 030024, China.
- Key Laboratory of Interface Science and Engineering in Advanced Materials, Taiyuan University of Technology, Taiyuan 030024, China.
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Choi MS, Chae S, Kim HJ, Kim JJ. Control of Crystallinity in PbPc:C 60 Blend Film and Application for Inverted Near-Infrared Organic Photodetector. ACS APPLIED MATERIALS & INTERFACES 2018; 10:25614-25620. [PMID: 29992818 DOI: 10.1021/acsami.8b08803] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/08/2023]
Abstract
Inverted near-infrared (NIR) organic photodetectors (OPDs) are required to combine the OPDs with an n-channel silicon-based integrated circuit. NIR absorption in the 930-960 nm range is important because the intensity of solar irradiation is low in this wavelength regime. Here, we controlled the crystallinity of lead(II) phthalocyanine (PbPc) in a PbPc:C60 blend film to obtain NIR absorption. To form a triclinic phase responsible for NIR light absorption, a substrate was heated during fabrication and C60 was used as a templating layer, as well as an electron extraction layer, for an inverted structure. NIR absorption near 950 nm was enhanced, and the structural properties of the film changed dramatically. The OPD with enhanced NIR absorption exhibited a responsivity of 244 mA/W and an external quantum efficiency of 31.1% at a reverse bias of -3 V and 970 nm. The OPD detectivity also increased to 9.01 × 1012 and 1.36 × 1011 cm Hz1/2/W under a zero bias and a reverse bias of -3 V, respectively.
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Affiliation(s)
- Min-Soo Choi
- Department of Materials Science and Engineering, Research Institute of Advanced Materials , Seoul National University , Seoul 08826 , South Korea
| | - Sangmin Chae
- Department of Organic Material Science and Engineering , Pusan National University , Busan 46241 , South Korea
| | - Hyo Jung Kim
- Department of Organic Material Science and Engineering , Pusan National University , Busan 46241 , South Korea
| | - Jang-Joo Kim
- Department of Materials Science and Engineering, Research Institute of Advanced Materials , Seoul National University , Seoul 08826 , South Korea
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Wang LJ, Ren M, Liang L, Zhang CY. Controllable fabrication of bio-bar codes for dendritically amplified sensing of human T-lymphotropic viruses. Chem Sci 2018; 9:4942-4949. [PMID: 29938021 PMCID: PMC5994793 DOI: 10.1039/c8sc01641k] [Citation(s) in RCA: 29] [Impact Index Per Article: 4.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 04/11/2018] [Accepted: 05/09/2018] [Indexed: 01/10/2023] Open
Abstract
We demonstrate for the first time the controllable fabrication of bio-bar codes for dendritically amplified sensing of low-abundant HTLV-II DNA.
Human T-lymphotropic virus type II (HTLV-II) is an important type-C retrovirus, closely related to a variety of human diseases. Here, we demonstrate for the first time the controllable fabrication of bio-bar codes for dendritically amplified sensing of low-abundant HTLV-II DNA by the integration of terminal deoxynucleotidyl transferase (TdT)-catalyzed template-free polymerization extension with bio-bar-code amplification (BCA). HTLV-II DNA hybridizes with magnetic microparticle (MMP)-modified capture probe 1, forming a stable DNA duplex with a protruding 3′-hydroxylated sequence which may function as a primer to initiate the TdT-catalyzed first-step polymerization extension for the generation of a poly-thymidine (T) sequence. The resultant poly-T products may hybridize with poly-adenine (A) capture probe 2, inducing the self-assembly of multiple capture probe 2-/reporter probe-functionalized Au nanoparticles (AuNPs) onto the MMP. Subsequently, the reporter probes may act as the primers to initiate the TdT-catalyzed second-step polymerization extension, producing large numbers of G-rich DNAzymes for the generation of an enhanced chemiluminescence signal. Taking advantage of the efficient polymerization extension reaction catalyzed by TdT, the high amplification efficiency of BCA, and the intrinsically high sensitivity of G-rich DNAzyme-driven chemiluminescence, this method exhibits ultrahigh sensitivity with a limit of detection of as low as 0.50 aM and a large dynamic range of 9 orders of magnitude from 1 aM to 1 nM. Moreover, this method can be applied for the discrimination of a single-base mismatch and the measurement of HTLV-II DNA in both human serum and human T-lymphocytic leukemia cells, holding great potential in biomedical research and clinical diagnosis.
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Affiliation(s)
- Li-Juan Wang
- College of Chemistry, Chemical Engineering and Materials Science , Collaborative Innovation Center of Functionalized Probes for Chemical Imaging in Universities of Shandong , Key Laboratory of Molecular and Nano Probes , Ministry of Education , Shandong Provincial Key Laboratory of Clean Production of Fine Chemicals , Shandong Normal University , Jinan 250014 , China . ; ; Tel: +86 0531 86186033
| | - Ming Ren
- College of Chemistry, Chemical Engineering and Materials Science , Collaborative Innovation Center of Functionalized Probes for Chemical Imaging in Universities of Shandong , Key Laboratory of Molecular and Nano Probes , Ministry of Education , Shandong Provincial Key Laboratory of Clean Production of Fine Chemicals , Shandong Normal University , Jinan 250014 , China . ; ; Tel: +86 0531 86186033
| | - Li Liang
- Department of Tumor Chemotherapy and Radiation Sickness , Peking University Third Hospital , Beijing 100191 , China
| | - Chun-Yang Zhang
- College of Chemistry, Chemical Engineering and Materials Science , Collaborative Innovation Center of Functionalized Probes for Chemical Imaging in Universities of Shandong , Key Laboratory of Molecular and Nano Probes , Ministry of Education , Shandong Provincial Key Laboratory of Clean Production of Fine Chemicals , Shandong Normal University , Jinan 250014 , China . ; ; Tel: +86 0531 86186033
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36
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Benavides CM, Murto P, Chochos CL, Gregoriou VG, Avgeropoulos A, Xu X, Bini K, Sharma A, Andersson MR, Schmidt O, Brabec CJ, Wang E, Tedde SF. High-Performance Organic Photodetectors from a High-Bandgap Indacenodithiophene-Based π-Conjugated Donor-Acceptor Polymer. ACS APPLIED MATERIALS & INTERFACES 2018; 10:12937-12946. [PMID: 29589432 DOI: 10.1021/acsami.8b03824] [Citation(s) in RCA: 9] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/08/2023]
Abstract
A conjugated donor-acceptor polymer, poly[4,4,9,9-tetrakis(4-hexylphenyl)-4,9-dihydro- s-indaceno[1,2- b:5,6- b']dithiophene-2,7-diyl- alt-5-(2-ethylhexyl)-4 H-thieno[3,4- c]pyrrole-4,6(5 H)-dione-1,3-diyl] (PIDT-TPD), is blended with the fullerene derivative [6,6]phenyl-C61-butyric acid methyl ester (PC61BM) for the fabrication of thin and solution-processed organic photodetectors (OPDs). Systematic screening of the concentration ratio of the blend and the molecular weight of the polymer is performed to optimize the active layer morphology and the OPD performance. The device comprising a medium molecular weight polymer (27.0 kg/mol) in a PIDT-TPD:PC61BM 1:1 ratio exhibits an external quantum efficiency of 52% at 610 nm, a dark current density of 1 nA/cm2, a detectivity of 1.44 × 1013 Jones, and a maximum 3 dB cutoff frequency of 100 kHz at -5 V bias. These results are remarkable among the state-of-the-art red photodetectors based on conjugated polymers. As such, this work presents a functional organic active material for high-speed OPDs with a linear photoresponse at different light intensities.
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Affiliation(s)
- Cindy Montenegro Benavides
- Siemens Healthcare GmbH , Günther-Scharowsky-Street 1 , 91058 Erlangen , Germany
- Department für Material Science, i-MEET , Friedrich-Alexander Universität Erlangen-Nürnberg , Martensstr. 7 , 91058 Erlangen , Germany
| | - Petri Murto
- Department of Chemistry and Chemical Engineering/Applied Chemistry , Chalmers University of Technology , SE-412 96 Gothenburg , Sweden
- Flinders Centre for Nanoscale Science and Technology , Flinders University , Sturt Road , Bedford Park, Adelaide , South Australia 5042 , Australia
| | - Christos L Chochos
- Advent Technologies SA , Patras Science Park, Stadiou Street , Platani-Rio, 26504 Patra , Greece
- Department of Materials Science Engineering , University of Ioannina , Ioannina 45110 , Greece
| | - Vasilis G Gregoriou
- Advent Technologies SA , Patras Science Park, Stadiou Street , Platani-Rio, 26504 Patra , Greece
| | - Apostolos Avgeropoulos
- Department of Materials Science Engineering , University of Ioannina , Ioannina 45110 , Greece
| | - Xiaofeng Xu
- Department of Chemistry and Chemical Engineering/Applied Chemistry , Chalmers University of Technology , SE-412 96 Gothenburg , Sweden
| | - Kim Bini
- Department of Chemistry and Chemical Engineering/Applied Chemistry , Chalmers University of Technology , SE-412 96 Gothenburg , Sweden
| | - Anirudh Sharma
- Flinders Centre for Nanoscale Science and Technology , Flinders University , Sturt Road , Bedford Park, Adelaide , South Australia 5042 , Australia
| | - Mats R Andersson
- Flinders Centre for Nanoscale Science and Technology , Flinders University , Sturt Road , Bedford Park, Adelaide , South Australia 5042 , Australia
| | - Oliver Schmidt
- Siemens Healthcare GmbH , Günther-Scharowsky-Street 1 , 91058 Erlangen , Germany
| | - Christoph J Brabec
- Department für Material Science, i-MEET , Friedrich-Alexander Universität Erlangen-Nürnberg , Martensstr. 7 , 91058 Erlangen , Germany
| | - Ergang Wang
- Department of Chemistry and Chemical Engineering/Applied Chemistry , Chalmers University of Technology , SE-412 96 Gothenburg , Sweden
| | - Sandro F Tedde
- Siemens Healthcare GmbH , Günther-Scharowsky-Street 1 , 91058 Erlangen , Germany
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37
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Zhang K, Lv L, Wang X, Mi Y, Chai R, Liu X, Shen G, Peng A, Huang H. Tellurophene-Based Random Copolymers for High Responsivity and Detectivity Photodetectors. ACS APPLIED MATERIALS & INTERFACES 2018; 10:1917-1924. [PMID: 29283552 DOI: 10.1021/acsami.7b15245] [Citation(s) in RCA: 9] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/07/2023]
Abstract
Organic photodetectors (OPDs) have attracted great attention because of their advantages including tunable response range, easy processability, and flexibility. Various conjugated polymers have been developed for high-performing OPDs. Herein, a series of tellurophene-based random copolymers containing two typical electron-withdrawing units naphthalene diimide (NDI) and perylene diimide (PDI) are designed and synthesized. Through varying the ratio of PDI/NDI moieties of the analogous polymers, the optophysical properties and film morphology, together with photodetector performances, are systematically tuned. It was demonstrated that the photodetectors based on the polymer with the molar ratio of PDI/NDI units of 70/30 possessed strong photoinduced absorption and favorable morphology via transient absorption spectra and atomic force microscopy studies. As a result, a high responsivity about 19.1 A/W at 600 nm and an excellent detectivity more than 1012 Jones ranging from 350 to 600 nm were successfully achieved, which are among the highest values for OPDs and comparable to inorganic counterparts.
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Affiliation(s)
- Kai Zhang
- College of Materials Science and Opto-Electronic Technology & Key Laboratory of Vacuum Physics, University of Chinese Academy of Sciences , Beijing 100049, P. R. China
- State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences , Beijing 100083, China
| | - Lei Lv
- College of Materials Science and Opto-Electronic Technology & Key Laboratory of Vacuum Physics, University of Chinese Academy of Sciences , Beijing 100049, P. R. China
| | - Xiaofen Wang
- College of Materials Science and Opto-Electronic Technology & Key Laboratory of Vacuum Physics, University of Chinese Academy of Sciences , Beijing 100049, P. R. China
| | - Yang Mi
- Division of Nanophotonics, CAS Key Laboratory of Standardization and Measurement for Nanotechnology, CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology , Beijing 100190, China
| | - Ruiqing Chai
- College of Materials Science and Opto-Electronic Technology & Key Laboratory of Vacuum Physics, University of Chinese Academy of Sciences , Beijing 100049, P. R. China
- State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences , Beijing 100083, China
| | - Xinfeng Liu
- Division of Nanophotonics, CAS Key Laboratory of Standardization and Measurement for Nanotechnology, CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology , Beijing 100190, China
| | - Guozhen Shen
- College of Materials Science and Opto-Electronic Technology & Key Laboratory of Vacuum Physics, University of Chinese Academy of Sciences , Beijing 100049, P. R. China
- State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences , Beijing 100083, China
| | - Aidong Peng
- College of Materials Science and Opto-Electronic Technology & Key Laboratory of Vacuum Physics, University of Chinese Academy of Sciences , Beijing 100049, P. R. China
| | - Hui Huang
- College of Materials Science and Opto-Electronic Technology & Key Laboratory of Vacuum Physics, University of Chinese Academy of Sciences , Beijing 100049, P. R. China
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