Tunable electronic and magnetic properties of two-dimensional materials and their one-dimensional derivatives

Insights on updates in sodium alginate/MXenes composites as the designer matrix for various applications: A review

Advancements in two-dimensional materials, particularly MXenes, have spurred the development of innovative composites through their integration with natural polymers such as sodium alginate (SA). Mxenes exhibit a broad specific surface area, excellent electrical conductivity, and an abundance of surface terminations, which can be combined with SA to maximize the synergistic effect of the materials. This article provides a comprehensive review of state-of-the-art techniques in the fabrication of SA/MXene composites, analyzing the resulting structural and functional enhancements with a specific focus on advancing the design of these composites for practical applications. A detailed exploration of SA/MXene composites is provided, highlighting their utility in various sectors, such as wearable electronics, wastewater treatment, biomedical applications, and electromagnetic interference (EMI) shielding. The review identifies the unique advantages conferred by incorporating MXene in these composites, examines the current challenges, and proposes future research directions to understand and optimize these promising materials thoroughly. The remarkable properties of MXenes are emphasized as crucial for advancing the performance of SA-based composites, indicating significant potential for developing high-performance composite materials.

Ga and Zn increase the oxygen affinity of Cu-based catalysts for the CO x hydrogenation according to ab initio atomistic thermodynamics

The direct hydrogenation of CO or CO₂ to methanol, a highly vivid research area in the context of sustainable development, is typically carried out with Cu-based catalysts. Specific elements (so-called promoters) improve the catalytic performance of these systems under a broad range of reaction conditions (from pure CO to pure CO₂). Some of these promoters, such as Ga and Zn, can alloy with Cu and their role remains a matter of debate. In that context, we used periodic DFT calculations on slab models and ab initio thermodynamics to evaluate both metal alloying and surface formation by considering multiple surface facets, different promoter concentrations and spatial distributions as well as adsorption of several species (O*, H*, CO* and ) for different gas phase compositions. Both Ga and Zn form an fcc-alloy with Cu due to the stronger interaction of the promoters with Cu than with themselves. While the Cu-Ga-alloy is more stable than the Cu-Zn-alloy at low promoter concentrations (<25%), further increasing the promoter concentration reverses this trend, due to the unfavoured Ga-Ga-interactions. Under CO₂ hydrogenation conditions, a substantial amount of O* can adsorb onto the alloy surfaces, resulting in partial dealloying and oxidation of the promoters. Therefore, the CO₂ hydrogenation conditions are actually rather oxidising for both Ga and Zn despite the large amount of H₂ present in the feedstock. Thus, the growth of a GaO _x /ZnO _x overlayer is thermodynamically preferred under reaction conditions, enhancing CO₂ adsorption, and this effect is more pronounced for the Cu-Ga-system than for the Cu-Zn-system. In contrast, under CO hydrogenation conditions, fully reduced and alloyed surfaces partially covered with H* and CO* are expected, with mixed CO/CO₂ hydrogenation conditions resulting in a mixture of reduced and oxidised states. This shows that the active atmosphere tunes the preferred state of the catalyst, influencing the catalytic activity and stability, indicating that the still widespread image of a static catalyst under reaction conditions is insufficient to understand the complex interplay of processes taking place on a catalyst surface under reaction conditions, and that dynamic effects must be considered.

2D Layers of Group VA Semiconductors: Fundamental Properties and Potential Applications

Members of the 2D group VA semiconductors (phosphorene, arsenene, antimonene, and bismuthine) present a new class of 2D materials, which are recently gaining a lot of research interest. These materials possess layered morphology, tunable direct bandgap, high charge carrier mobility, high stability, unique in-plane anisotropy, and negative Poisson's ratio. They prepare the ground for novel and multifunctional applications in electronics, optoelectronics, and batteries. The most recent analytical and empirical developments in the fundamental characteristics, fabrication techniques, and potential implementation of 2D group VA materials in this review, along with presenting insights and concerns for the field's future are analyzed.

Electric-Field Control in Phosphorene-Based Heterostructures

Phosphorene is a graphene-like material with an intermediate band gap, in contrast to zero-gap graphene and large-gap dichalcogenides or hexagonal boron nitride (hBN), which makes it more suitable for nanoelectronic devices. However, inducing band-gap modulation in freestanding phosphorene nanoribbons (PNRs) is problematic, as high in-plane electric fields are necessary to close the gap. We perform here a detailed investigation concerning the substrate influence on the electric-field control exerted by an external gate, using the density functional theory-non-equilibrium Green's functions (DFT-NEGF) framework. It is established that the interaction with a hexagonal boron nitride supporting layer significantly enhances the gap modulation. Furthermore, we address the issue of contacting the PNRs, by using conducting graphene nanoribbons embedded in the support hBN layer. Within this setup, a measurable spin polarization is achieved owing to the anti-ferromagnetic coupling between the edges of the graphene nanoribbons.

MXenes Thin Films: From Fabrication to Their Applications

Two-dimensional MXenes possessed exceptional physiochemical properties such as high electrical conductivity (20,000 Scm⁻¹), flexibility, mechanical strength (570 MPa), and hydrophilic surface functionalities that have been widely explored for energy storage, sensing, and catalysis applications. Recently, the fabrication of MXenes thin films has attracted significant attention toward electronic devices and sensor applications. This review summarizes the exciting features of MXene thin film fabrication methods such as vacuum-assisted filtration (VAF), electrodeposition techniques, spin coating, spray coating, dip-coating methods, and other physical/chemical vapor deposition methods. Furthermore, a comparison between different methods available for synthesizing a variety of MXenes films was discussed in detail. This review further summarizes fundamental aspects and advances of MXenes thin films in solar cells, batteries, electromagnetic interference shielding, sensing, etc., to date. Finally, the challenges and opportunities in terms of future research, development, and applications of MXenes-based films are discussed. A comprehensive understanding of these competitive features and challenges shall provide guidelines and inspiration for further growth in MXenes-based functional thin films and contribute to the advances in MXenes technology.

Controllable Valley Polarization and Strain Modulation in 2D 2H–VS2/CuInP2Se6 Heterostructures

Two–dimensional (2D) transition metal dichalcogenides endow individually addressable valleys in momentum space at the K and K’ points in the first Brillouin zone due to the breaking of inversion symmetry and the effect of spin–orbit coupling. However, the application of 2H–VS₂ monolayer in valleytronics is limited due to the valence band maximum (VBM) located at the Γ point. Here, by involving the 2D ferroelectric (FE) CuInP₂Se₆ (CIPSe), the ferrovalley polarization, electronic structure, and magnetic properties of 2D 2H–VS₂/CIPSe heterostructures with different stacking patterns and FE polarizations have been investigated by using first–principles calculations. It is found that, for the energetically favorable AB–stacking pattern, the valley polarization is preserved when the FE polarization of CIPSe is upwards (CIPSe↑) or downwards (CIPSe↓) with the splitting energies slightly larger or smaller compared with that of the pure 2H–VS₂. It is intriguing that, for the FE CIPSe↑ case, the VBM is expected to pass through the Fermi energy level, which can be eventually achieved by applying biaxial strain and thus the valleytronic nature is turned off; however, for the CIPSe↓ situation, the heterostructure basically remains semiconducting even under biaxial strains. Therefore, with the influence of proper strains, the FE polar reversal of CIPSe can be used as a switchable on/off to regulate the valley polarization in VS₂. These results not only demonstrate that 2H–VS₂/CIPSe heterostructures are promising potential candidates in valleytronics, but also shed some light on developing practical applications of valleytronic technology.

Biomedical engineering of two-dimensional MXenes

The emergence of two-dimensional (2D) transition metal carbides, carbonitrides and nitrides, referred to MXenes, with a general chemical formula of M_n+1X_nT_x have aroused considerable interest and shown remarkable potential applications in diverse fields. The unique ultrathin lamellar structure accompanied with charming electronic, optical, magnetic, mechanical and biological properties make MXenes as a kind of promising alternative biomaterials for versatile biomedical applications, as well as uncovering many new fundamental scientific discoveries. Herein, the current state-of-the-art advances of MXenes-related biomaterials are systematically summarized in this comprehensive review, especially focusing on the synthetic methodologies, design and surface engineering strategies, unique properties, biological effects, and particularly the property-activity-effect relationship of MXenes at the nano-bio interface. Furthermore, the elaborated MXenes for varied biomedical applications, such as biosensors and biodevices, antibacteria, bioimaging, therapeutics, theranostics, tissue engineering and regenerative medicine, are illustrated in detail. Finally, we discuss the current challenges and opportunities for future advancement of MXene-based biomaterials in-depth on the basis of the present situation, aiming to facilitate their early realization of practical biomedical applications.

MXene (Ti3C2Tx)-Embedded Nanocomposite Hydrogels for Biomedical Applications: A Review

Polymeric nanocomposites have been outstanding functional materials and have garnered immense attention as sustainable materials to address multi-disciplinary problems. MXenes have emerged as a newer class of 2D materials that produce metallic conductivity upon interaction with hydrophilic species, and their delamination affords monolayer nanoplatelets of a thickness of about one nm and a side size in the micrometer range. Delaminated MXene has a high aspect ratio, making it an alluring nanofiller for multifunctional polymer nanocomposites. Herein, we have classified and discussed the structure, properties and application of major polysaccharide-based electroactive hydrogels (hyaluronic acid (HA), alginate sodium (SA), chitosan (CS) and cellulose) in biomedical applications, starting with the brief historical account of MXene’s development followed by successive discussions on the synthesis methods, structures and properties of nanocomposites encompassing polysaccharides and MXenes, including their biomedical applications, cytotoxicity and biocompatibility aspects. Finally, the MXenes and their utility in the biomedical arena is deliberated with an eye on potential opportunities and challenges anticipated for them in the future, thus promoting their multifaceted applications.

Recent Developments in van der Waals Antiferromagnetic 2D Materials: Synthesis, Characterization, and Device Implementation

Magnetism in two dimensions is one of the most intriguing and alluring phenomena in condensed matter physics. Atomically thin 2D materials have emerged as a promising platform for exploring magnetic properties, leading to the development of essential technologies such as supercomputing and data storage. Arising from spin and charge dynamics in elementary particles, magnetism has also unraveled promising advances in spintronic devices and spin-dependent optoelectronics and photonics. Recently, antiferromagnetism in 2D materials has received extensive attention, leading to significant advances in their understanding and emerging applications; such materials have zero net magnetic moment yet are internally magnetic. Several theoretical and experimental approaches have been proposed to probe, characterize, and modulate the magnetic states efficiently in such systems. This Review presents the latest developments and current status for tuning the magnetic properties in distinct 2D van der Waals antiferromagnets. Various state-of-the-art optical techniques deployed to investigate magnetic textures and dynamics are discussed. Furthermore, device concepts based on antiferromagnetic spintronics are scrutinized. We conclude with remarks on related challenges and technological outlook in this rapidly expanding field.

Spin current distribution in antiferromagnetic zigzag graphene nanoribbons under transverse electric fields

The spin current transmission properties of narrow zigzag graphene nanoribbons (zGNRs) have been the focus of much computational research, investigating the potential application of zGNRs in spintronic devices. Doping, fuctionalization, edge modification, and external electric fields have been studied as methods for spin current control, and the performance of zGNRs initialized in both ferromagnetic and antiferromagnetic spin states has been modeled. Recent work has shown that precise fabrication of narrow zGNRs is possible, and has addressed long debated questions on their magnetic order and stability. This work has revived interest in the application of antiferromagnetic zGNR configurations in spintronics. A general ab initio analysis of narrow antiferromagnetic zGNR performance under a combination of bias voltage and transverse electric field loading shows that their current transmission characteristics differ sharply from those of their ferromagnetic counterparts. At relatively modest field strengths, both majority and minority spin currents react strongly to the applied field. Analysis of band gaps and current transmission pathways explains the presence of negative differential resistance effects and the development of spatially periodic electron transport structures in these nanoribbons.

Electronic properties of a two-dimensional van der Waals MoGe2N4/MoSi2N4 heterobilayer: effect of the insertion of a graphene layer and interlayer coupling

van der Waals heterostructures (vdWHs) based on 2D layered materials with select properties are paving the way to integration at the atomic scale, and may give rise to new heterostructures exhibiting absolutely novel physics and versatility. Herein, we investigate the structural and contact types in a 2D vdW heterobilayer between MoGe₂N₄ and MoSi₂N₄ monolayers, and the monolayers in the presence of electrical graphene (GR) contact. In the ground state, the MoGe₂N₄/MoSi₂N₄ heterobilayer forms type-II band alignment, which effectively promotes the separation of electrons and holes and provides opportunity for further electrons and holes. Thus, the MoGe₂N₄/MoSi₂N₄ heterobilayer is promising for designing optoelectronic devices with significantly suppressed carrier-recombination. Interestingly, the insertion of the GR contact to a MoGe₂N₄/MoSi₂N₄ heterobilayer gives rise to the formation of a metal/semiconductor contact. Depending on the GR position relative to the MoGe₂N₄/MoSi₂N₄ heterobilayer, the GR-based heterostructure can form either an n-type or p-type Schottky contact. Intriguingly, the contact barriers in the GR contacted MoGe₂N₄/MoSi₂N₄ heterobilayer are significantly smaller than those in the GR contacted with MoGe₂N₄ or MoSi₂N₄ monolayers, suggesting that the GR/MoGe₂N₄/MoSi₂N₄ heterostructure offers an effective pathway to reduce the Schottky barrier, which is highly beneficial for improving the charge injection efficiency of the contact heterostructures. More interestingly, by controlling the interlayer coupling through stacking, both the Schottky barriers and contact types in the GR/MoGe₂N₄/MoSi₂N₄ heterostructure can be manipulated. Our findings could provide theoretical insight into the design of nanodevices based on a GR and MoGe₂N₄/MoSi₂N₄ heterobilayer.

Geometric, electronic, and optical properties of MoS2/WSSe van der Waals heterojunctions: a first-principles study

Van der Waals (vdW) heterojunctions constructed by vertical stacking two-dimensional transition metal dichalcogenides hold exciting promise in realizing future atomically thin electronic and optoelectronic devices. Recently, a Janus WSSe structure has been successfully synthesized by using chemical vapor deposition, selective epitaxy atomic replacement, and pulsed laser deposition methods. Herein, based on first-principles calculations, we introduce the structures and performances of MoS₂/WSSe vdW heterojunctions with different interfaces and stacking modes. The vdW heterojunctions possess indirect band gaps for S-S interfaces, while direct band gaps for Se-S interfaces. Besides, the potential drop indicates an efficient separation of photogenerated charges. Interestingly, the opposite built-in electric fields formed in the vdW heterojunctions with a S-S interface and a Se-S interface suggest different charge transfer paths, which would motivate further theoretical and experimental investigations on charge transfer dynamics. Moreover, the electronic property is adjustable by applying external in-plane strains, accomplishing with indirect to direct bandgap transition and semiconductor to metal transition. The findings are helpful for the design of multi-functional high-performance electronic and optoelectronic devices based on the MoS₂/WSSe vdW heterojunctions.

Tuning the Magnetic Properties of Two-Dimensional MXenes by Chemical Etching

Two-dimensional materials based on transition metal carbides have been intensively studied due to their unique properties including metallic conductivity, hydrophilicity and structural diversity and have shown a great potential in several applications, for example, energy storage, sensing and optoelectronics. While MXenes based on magnetic transition elements show interesting magnetic properties, not much is known about the magnetic properties of titanium-based MXenes. Here, we measured the magnetic properties of Ti3C2Tx MXenes synthesized by different chemical etching conditions such as etching temperature and time. Our magnetic measurements were performed in a superconducting quantum interference device (SQUID) vibrating sample. These data suggest that there is a paramagnetic-antiferromagnetic (PM-AFM) phase transition and the transition temperature depends on the synthesis procedure of MXenes. Our observation indicates that the magnetic properties of these MXenes can be tuned by the extent of chemical etching, which can be beneficial for the design of MXenes-based spintronic devices.

Strain-induced topological phase transition with inversion of the in-plane electric polarization in tiny-gap semiconductor SiGe monolayer

Our density functional theory calculations show that tiny-gap semiconductor SiGe monolayer is a quantum valley Hall insulator with a spontaneous electric polarization and, under a small biaxial strain, undergoes a topological phase transition between the states with opposite valley Chern numbers. The topological phase transition entails abrupt inversion of the in-plane electric polarization corresponding to inversion of the sublattice pseudospin polarization, while the out-of-plane electric polarization shows a linear response to the biaxial strain as well as to the perpendicular electric field regardless of the phase transition. Thus, the quantum valley Hall state entails in-plane ferroelectricity corresponding to a sublattice pseudospin ferromagnetism.

Quantum valley Hall effect in wide-gap semiconductor SiC monolayer

We have investigated the valley Chern number and gapless edge states in wide-gap semiconductor SiC and BN monolayers by using the density functional theory calculations. We found that while SiC monolayer has a non-quantized valley Chern number due to a partial mixing of the Berry curvature peaks pertaining to the opposite valleys, there exist topologically protected gapless edge states within the bulk gap, leading to a quantum valley Hall effect. Doping of the opposite charge carriers causes a backscattering-free valley current flowing on the opposite edge, which can be used for experimental confirmation and application at room temperature. BN monolayer, on the other hand, was found to have gapped edge states due to the too large staggered AB-sublattice potentials.

Two-Dimensional Electrocatalysts for Efficient Reduction of Carbon Dioxide

Two-dimensional (2D) materials are attractive catalysts for the electrochemical reduction of carbon dioxide reaction (eCO₂ RR) by virtue of their tunable atomic structures, abundant active sites, enhanced conductivity, suitable binding affinity to carbon dioxide and/or reaction intermediates, and intrinsic scalability. Herein, recent advances in 2D catalysts for the eCO₂ RR are reviewed. Structural features and properties of 2D materials that contribute to their advanced electrocatalytic properties are summarized, and strategies for enhancing their activity and selectivity for the eCO₂ RR are reviewed. Prospects and challenges of applications of 2D catalysts for the eCO₂ RR on an industrial scale are highlighted.

Electronic and transport properties and physical field coupling effects for net-Y nanoribbons

Recently, a new type of quasi-1D graphene-like nanoribbons, periodically embedded with four- and eight- membered rings, has been successfully fabricated, and based on this structure, a novel planar 2D carbon allotrope, the so-called the net-Y, has been proposed. Here, we study various nanoribbons derived from such a 2D monolayer focusing on the structure stability, electronic, and transport properties, especially on the physical field coupling effects of electronic behaviors. Very high stability is predicted for various types of nanoribbons by the calculated binding energy and molecular dynamics simulation. Different edge shapes and widths have a significant influence on their electronic properties. Armchair nanoribbons are always semiconductors, and possess a high carrier mobility. After hydrogen termination, some metallic nanoribbons can become semiconductors or quasi-metals with massless Dirac-fermion behavior. In particular, the electronic properties of ribbons can be effectively modulated by applying strain and electric field. The band gap size and the transition from indirect to direct band gap can be realized upon strain or electric field. These flexibly tunable electronic properties for nanoribbons expand their applications in nanoelectronics and optoelectronics.

Emerging hydrovoltaic technology

Water contains tremendous energy in a variety of forms, but very little of this energy has yet been harnessed. Nanostructured materials can generate electricity on interaction with water, a phenomenon that we term the hydrovoltaic effect, which potentially extends the technical capability of water energy harvesting and enables the creation of self-powered devices. In this Review, starting by describing fundamental properties of water and of water-solid interfaces, we discuss key aspects pertaining to water-carbon interactions and basic mechanisms of harvesting water energy with nanostructured materials. Experimental advances in generating electricity from water flows, waves, natural evaporation and moisture are then reviewed to show the correlations in their basic mechanisms and the potential for their integration towards harvesting energy from the water cycle. We further discuss potential device applications of hydrovoltaic technologies, analyse main challenges in improving the energy conversion efficiency and scaling up the output power, and suggest prospects for developments of the emerging technology.

Tunnable rectifying performance of in-plane metal-semiconductor junctions based on passivated zigzag phosphorene nanoribbons

Using first principles density functional theory, we perform a systematic study of the band structures of passivated zigzag phosphorene nanoribbons (ZPNRs) and the transport properties of in-plane metal–semiconductor junctions. It is found that the ZPNR passivated by H, Cl or F atoms is a semiconductor, and the ZPNR passivated by C, O or S atoms is a metal. Therefore, ZPNRs with different passivated atoms can be fabricated into an in-plane metal–semiconductor junction. The calculated current–voltage characteristics indicate that these in-plane metal–semiconductor junctions can exhibit excellent rectification behavior. More importantly, we find that the type of passivated atom plays a very important role in the rectification ratio of this in-plane metal–semiconductor junction. The findings are very useful for the further design of functional nanodevices based on ZPNRs.

Using first principles density functional theory, we perform a systematic study of the band structures of passivated zigzag phosphorene nanoribbons (ZPNRs) and the transport properties of in-plane metal–semiconductor junctions.

Emerging chemical strategies for imprinting magnetism in graphene and related 2D materials for spintronic and biomedical applications

Graphene, a single two-dimensional sheet of carbon atoms with an arrangement mimicking the honeycomb hexagonal architecture, has captured immense interest of the scientific community since its isolation in 2004. Besides its extraordinarily high electrical conductivity and surface area, graphene shows a long spin lifetime and limited hyperfine interactions, which favors its potential exploitation in spintronic and biomedical applications, provided it can be made magnetic. However, pristine graphene is diamagnetic in nature due to solely sp2 hybridization. Thus, various attempts have been proposed to imprint magnetic features into graphene. The present review focuses on a systematic classification and physicochemical description of approaches leading to equip graphene with magnetic properties. These include introduction of point and line defects into graphene lattices, spatial confinement and edge engineering, doping of graphene lattice with foreign atoms, and sp3 functionalization. Each magnetism-imprinting strategy is discussed in detail including identification of roles of various internal and external parameters in the induced magnetic regimes, with assessment of their robustness. Moreover, emergence of magnetism in graphene analogues and related 2D materials such as transition metal dichalcogenides, metal halides, metal dinitrides, MXenes, hexagonal boron nitride, and other organic compounds is also reviewed. Since the magnetic features of graphene can be readily masked by the presence of magnetic residues from synthesis itself or sample handling, the issue of magnetic impurities and correct data interpretations is also addressed. Finally, current problems and challenges in magnetism of graphene and related 2D materials and future potential applications are also highlighted.

Identification of dopant site and its effect on electrochemical activity in Mn-doped lithium titanate

Doped metal oxide materials are commonly used for applications in energy storage and conversion, such as batteries and solid oxide fuel cells. The knowledge of the electronic properties of dopants and their local environment is essential for understanding the effects of doping on the electrochemical properties. Using a combination of X-ray absorption near-edge structure spectroscopy (XANES) experiment and theoretical modeling we demonstrate that in the dilute (1 at. %) Mn-doped lithium titanate (Li4/3Ti5/3O4, or LTO) the dopant Mn2+ ions reside on tetrahedral (8a) sites. First-principles Mn K-edge XANES calculations revealed the spectral signature of the tetrahedrally coordinated Mn as a sharp peak in the middle of the absorption edge rise, caused by the 1s → 4p transition, and it is important to include the effective electron-core hole Coulomb interaction in order to calculate the intenisty of this peak accurately. This dopant location explains the impedance of Li migration through the LTO lattice during the charge-discharge process, and, as a result - the observed remarkable 20% decrease in electrochemical rate performance of the 1% Mn-doped LTO compared to the pristine LTO.

B40 cluster stability, reactivity, and its planar structural precursor

We report a comprehensive first-principles study of the structural and chemical properties of the recently discovered B₄₀ cage. It is found to be highly reactive and can exothermically dimerize, regardless of the orientation, by overcoming a small energy barrier ≃0.06 eV. The energy gap of the system varies widely with the aggregation of the increasing number of B₄₀ cages, from 3.14 eV in a single B₄₀, to 1.54 eV in the dimer, to 1.25 eV in the trimer. We also explore a recipe for protecting the B₄₀ cage by sheathing it within a carbon shell and identify carbon nanotubes with a radius of ∼6 Å as optimal hosts for an isolated cage. It is demonstrated that B₄₀ can be unfolded into a planar 'molecule' that tessellates the plane. The corresponding 2D boron sheet constitutes a structural precursor foldable into this unique boron cage structure of current interest.

Atomically Thin-Layered Molybdenum Disulfide (MoS2) for Bulk-Heterojunction Solar Cells

Transition metal dichalcogenides (TMDs) are becoming significant because of their interesting semiconducting and photonic properties. In particular, TMDs such as molybdenum disulfide (MoS₂), molybdenum diselenide (MoSe₂), tungsten disulfide (WS₂), tungsten diselenide (WSe₂), titanium disulfide (TiS₂), tantalum sulfide (TaS₂), and niobium selenide (NbSe₂) are increasingly attracting attention for their applications in solar cell devices. In this review, we give a brief introduction to TMDs with a focus on MoS₂; and thereafter, emphasize the role of atomically thin MoS₂ layers in fabricating solar cell devices, including bulk-heterojunction, organic, and perovskites-based solar cells. Layered MoS₂ has been used as the hole-transport layer (HTL), electron-transport layer (ETL), interfacial layer, and protective layer in fabricating heterojunction solar cells. The trilayer graphene/MoS₂/n-Si solar cell devices exhibit a power-conversion efficiency of 11.1%. The effects of plasma and chemical doping on the photovoltaic performance of MoS₂ solar cells have been analyzed. After doping and electrical gating, a power-conversion efficiency (PCE) of 9.03% has been observed for the MoS₂/h-BN/GaAs heterostructure solar cells. The MoS₂-containing perovskites-based solar cells show a PCE as high as 13.3%. The PCE of MoS₂-based organic solar cells exceeds 8.40%. The stability of MoS₂ solar cells measured under ambient conditions and light illumination has been discussed. The MoS₂-based materials show a great potential for solar cell devices along with high PCE; however, in this connection, their long-term environmental stability is also of equal importance for commercial applications.

Spin-dependent electron transport in C and Ge doped BN monolayers

The aliovalent doping in h-BN monolayers leads to unique features in the electron transport characteristics including significant enhancement of current at the dopant site, diode-like asymmetric current–voltage response, and spin-dependent current.