Reactivity of Ultra-Thin ZnO Films Supported by Ag(111) and Cu(111): A Comparison to ZnO/Pt(111)

Plasmonic Light Emission by Inelastic Charge Transport in Ultrathin Zinc Oxide/Metal Heterostructures

Controlling light emission from plasmonic nanojunctions is crucial for developing tunable nanoscale light sources and integrated photonic applications. It requires precise engineering of plasmonic nanocavity electrodes and a detailed understanding of electrically driven light emission. Using scanning tunneling microscopy-induced luminescence (STML), we studied plasmonic light emission from ultrathin ZnO/Ag(111) inside a silver nanocavity. At positive bias, plasmonic luminescence, caused by radiative decay of localized surface plasmons (LSP), is spectrally low-pass filtered by the ZnO layers. The emission of photon energies above the conduction band edge energy (ECB) of ZnO is suppressed, while the spectral distribution below ECB resembles the LSP resonance on Ag(111). This spectral filtering is absent at negative bias and depends on the local electronic structure, as confirmed by spatial STML mapping. Our findings demonstrate that the ZnO conduction band serves as the initial state for plasmonic luminescence driven by inelastic electron transport across the ZnO/Ag(111) interface.

Morphology-electronic effects in ultra-model nanocatalysts under the CO oxidation reaction: the case of ZnO ultrathin films grown on Pt(111)

The study of the surface morphology and interface of metal-oxides is crucial for understanding the behavior of these model systems as nanocatalysts. Besides, understanding the interplay between morphology, stability, and reactivity is crucial for designing efficient catalysts. Here, we investigated the stability and dewetting of ZnO ultrathin films on Pt(111) under CO oxidation conditions. For films <1 monolayer (ML), CO-induced dewetting occurs at the metal-oxide interface or defects. The morphology, dependent on thickness, influences reactivity. (6 × 6) structures show greater CO binding and structural changes compared to (4 × 4) structures, which exhibit resilience due to Zn-OH formation. ZnO electronic properties, as revealed by Auger spectroscopy and scanning tunneling spectroscopy (STS) investigations, vary with thickness. Low-thickness films [<2 monolayers (ML)] exhibit metallic-like behavior, possibly due to Zn-Pt interaction, while thicker films show n-type semiconductor behavior with a bandgap opening (EBG = 0.9 eV at 2 ML). DFT calculations of the local density of states (LDOS) as a function of ZnO thickness confirm the thickness-dependent electronic structure, with 0.3 ML films having a higher LDOS near the Fermi level than 1 ML films. These findings highlight the critical role of ZnO morphology in determining its stability and reactivity which opens up avenues for designing efficient and more stable ZnO-based nanocatalysts for a wide range of chemical reactions, including CO oxidation and CO2 hydrogenation.

Visualizing the gas-sensitive structure of the CuZn surface in methanol synthesis catalysis

Methanol formation over Cu/ZnO catalysts is linked with a catalytically active phase created by contact between Cu nanoparticles and Zn species whose chemical and structural state depends on reaction conditions. Herein, we use variable-temperature scanning tunneling microscopy at elevated pressure conditions combined with X-ray photoelectron spectroscopy measurements to investigate the surface structures and chemical states that evolve when a CuZn/Cu(111) surface alloy is exposed to reaction gas mixtures. In CO2 hydrogenation conditions, Zn stays embedded in the CuZn surface, but once CO gas is added to the mixture, the Zn segregates onto the Cu surface. The Zn segregation is CO-induced, and establishes a new dynamic state of the catalyst surface where Zn is continually exchanged at the Cu surface. Candidates for the migrating few-atom Zn clusters are further identified in time-resolved imaging series. The findings point to a significant role of CO affecting the distribution of Zn in the multiphasic ZnO/CuZn/Cu catalysts.

Activating lattice oxygen of single-layer ZnO for the catalytic oxidation reaction

Tuning an oxide/metal interface is of critical importance for the performance enhancement of many heterogeneous catalytic reactions. However, catalytic oxidation occurring at the interface between non-reducible oxide and metal has been challenging, since non-reducible oxides hardly lose their lattice oxygen (O_L) or dissociate O₂ from the gas phase. In this work, a ZnO monolayer film on Au(111) is used as an inverse catalyst to investigate CO oxidation occurring at the ZnO/Au(111) interface via high pressure scanning tunneling microscopy. Surface science experiments indicate that oxygen intercalation under the ZnO monolayer film, termed ZnO/O/Au(111), can be achieved via a surface reaction with 1 × 10^-6 mbar O₃. Subsequent exposure of the formed ZnO/O/Au(111) surface to mbar CO at room temperature leads to the recovery of the pristine ZnO/Au(111) surface. Theoretical calculations reveal that O_L adjacent to intercalated oxygen (O_int) is activated due to the O_L-Zn-O_int bonding and surface corrugation, which can be directly involved in CO oxidation. Subsequently, O_int migrates to the formed oxygen vacancy from the subsurface resuming the pristine ZnO structure. These results thus reveal that oxygen intercalation underneath single-layer ZnO will strongly boost the oxidation reaction via activating adjacent lattice oxygen atoms.

Universal properties of metal-supported oxide films from linear scaling relationships: elucidation of mechanistic origins of strong metal–support interactions

General principles of Strong Metal–Support Interactions (SMSI) overlayer formation have been elucidated using predictive models derived from ultrathin (hydroxy)oxide films on transition metal substrates.

Electronic, Magnetic, and Optical Properties of Metal Adsorbed g-ZnO Systems

2D ZnO is one of the most attractive materials for potential applications in photocatalysis, gas and light detection, ultraviolet light-emitting diodes, resistive memory, and pressure-sensitive devices. The electronic structures, magnetic properties, and optical properties of M (Li, Na, Mg, Ca, or Ga) and TM (Cr, Co, Cu, Ag, or Au) adsorbed g-ZnO were investigated with density functional theory (DFT). It is found that the band structure, charge density difference, electron spin density, work function, and absorption spectrum of g-ZnO can be tuned by adsorbing M or TM atoms. More specifically, the specific charge transfer occurs between g-ZnO and adsorbed atom, indicating the formation of a covalent bond. The work functions of M adsorbed g-ZnO systems are obviously smaller than that of intrinsic g-ZnO, implying great potential in high-efficiency field emission devices. The Li, Na, Mg, Ca, Ga, Ag, or Au adsorbed g-ZnO systems, the Cr adsorbed g-ZnO system, and the Co or Cu adsorbed g-ZnO systems exhibit non-magnetic semiconductor proprieties, magnetic semiconductor proprieties, and magnetic metal proprieties, respectively. In addition, the magnetic moments of Cr, Co, or Cu adsorbed g-ZnO systems are 4 μB, 3 μB, or 1 μB, respectively, which are mainly derived from adsorbed atoms, suggesting potential applications in nano-scale spintronics devices. Compared with the TM absorbed g-ZnO systems, the M adsorbed g-ZnO systems have more obvious absorption peaks for visible light, particularly for Mg or Ca adsorbed g-ZnO systems. Their absorption peaks appear in the near-infrared region, suggesting great potential in solar photocatalysis. Our work contributes to the design and fabrication of high-efficiency field emission devices, nano-scale spintronics devices, and visible-light responsive photocatalytic materials.

Nanoscale Heating of an Ultrathin Oxide Film Studied by Tip-Enhanced Raman Spectroscopy

We report on the nanoscale heating mechanism of an ultrathin ZnO film using low-temperature tip-enhanced Raman spectroscopy. Under the resonance condition, intense Stokes and anti-Stokes Raman scattering can be observed for the phonon modes of a two-monolayer (ML) ZnO on an Ag(111) surface, enabling us to monitor local heating at the nanoscale. It is revealed that the local heating originates mainly from inelastic electron tunneling through the electronic resonance when the bias voltage exceeds the conduction band edge of the 2-ML ZnO. When the bias voltage is lower than the conduction band edge, the local heating arises from two different contributions, namely direct optical excitation between the interface state and the conduction band of 2-ML ZnO or injection of photoexcited electrons from an Ag tip into the conduction band. These optical heating processes are promoted by localized surface plasmon excitation. Simultaneous mapping of tip-enhanced Raman spectroscopy and scanning tunneling spectroscopy for 2-ML ZnO including an atomic-scale defect demonstrates visualizing a correlation between the heating efficiency and the local density of states, which further allows us to analyze the local electron-phonon coupling strength with ∼2  nm spatial resolution.

Chemical Batteries with CO2

Efforts to obtain raw materials from CO2 by catalytic reduction as a means of combating greenhouse gas emissions are pushing the boundaries of the chemical industry. The dimensions of modern energy regimes, on the one hand, and the necessary transport and trade of globally produced renewable energy, on the other, will require the use of chemical batteries in conjunction with the local production of renewable electricity. The synthesis of methanol is an important option for chemical batteries and will, for that reason, be described here in detail. It is also shown that the necessary, robust, and fundamental understanding of processes and the material science of catalysts for the hydrogenation of CO2 does not yet exist.

Copper–zinc oxide interface as a methanol-selective structure in Cu–ZnO catalyst during catalytic hydrogenation of carbon dioxide to methanol

The proper contact of zinc oxide and copper phases is essential achieving high activity/selectivity toward methanol in the Cu–ZnO system.

Electronic and optical properties of two-dimensional GaN/ZnO heterojunction tuned by different stacking configurations

Two-dimensional (2D) semiconductors show novel electronic and optoelectronic applications due to their excellent performance. The van der Waals (vdW) heterostructures are also a new method for the design of low dimensional optoelectronic devices. However, their fundamental electronic structure and optical properties are sensitive to stacking configurations. Herein, we perform systematic first-principle calculations for monolayer GaN and ZnO by six different stacking styles. The results suggest that the bonding type and stability vary with the stacking method. Chemical bonding and vdW interaction are respectively observed in different models. However, the carrier mobilities for different models are all enhanced after integration. Both type I and II band alignment can be generated from different stacking models. The optical properties suggest high absorptivity in the solar-blind region. This study is an early stage for the design and synthesis of photodetectors or solar cells based on 2D GaN/ZnO heterojunctions and also opens a far-ranging research interest in optoelectronic materials and devices with more advanced semiconductor materials.

Structural and Chemical Transformations of Zinc Oxide Ultrathin Films on Pd(111) Surfaces

Structural and chemical transformations of ultrathin oxide films on transition metals lie at the heart of many complex phenomena in heterogeneous catalysis, such as the strong metal-support interaction (SMSI). However, there is limited atomic-scale understanding of these transformations, especially for irreducible oxides such as ZnO. Here, by combining density functional theory calculations and surface science techniques, including scanning tunneling microscopy, X-ray photoelectron spectroscopy, high-resolution electron energy loss spectroscopy, and low-energy electron diffraction, we investigated the interfacial interaction of well-defined ultrathin ZnO_xH_y films on Pd(111) under varying gas-phase conditions [ultrahigh vacuum (UHV), 5 × 10^-7 mbar of O₂, and a D₂/O₂ mixture] to shed light on the SMSI effect of irreducible oxides. Sequential treatment of submonolayer zinc oxide films in a D₂/O₂ mixture (1:4) at 550 K evoked reversible structural transformations from a bilayer to a monolayer and further to a Pd-Zn near-surface alloy, demonstrating that zinc oxide, as an irreducible oxide, can spread on metal surfaces and show an SMSI-like behavior in the presence of hydrogen. A mixed canonical-grand canonical phase diagram was developed to bridge the gap between UHV conditions and true SMSI environments, revealing that, in addition to surface alloy formation, certain ZnO_xH_y films with stoichiometries that do not exist in bulk are stabilized by Pd in the presence of hydrogen. Based on the combined theoretical and experimental observations, we propose that SMSI metal nanoparticle encapsulation for irreducible oxide supports such as ZnO involves both surface (hydroxy)oxide and surface alloy formation, depending on the environmental conditions.

From Chain- to Graphene-like Hydroxyl-terminated (ZnO)n Clusters with n≤6 Obtained via Zinc Dimethoxide Hydrolysis and Condensation: Ab initio Structural, Electronic, Vibrational and Optical Properties Calculations

Recent reports are focusing on the structural evolution from the atomic-scale and also at the expenses of alkyl zinc alkoxide precursors towards (ZnO)_n clusters and nanostructures with different interesting motifs, but still not much is known about their electronic properties. In this manuscript, we present a theoretical study using DFT and TD-DFT methodologies on the hydrolysis and condensation of zinc dimethoxide precursor in its monomeric, dimeric and trimeric forms towards thermodynamically stable hydroxyl-terminated (ZnO)_n clusters with novel chain- and graphene-like fashions. For all cases, distinct vibrational and optical spectra features were assigned evidencing a global monotonic decrease in the opto-electronic gap with increasing oligomerization and cyclization stages. In addition, the electron-affinity of all clusters was also observed to be enhanced with increasing oligomerization and cyclization stages and the electronic charge localization in -e charged clusters was observed to be strongly related to the presence of zinc-oxo subunits and other particular structural features. Our calculations also indicate that the stabilization through hydroxyl termination of both chain- and graphene-like ZnO clusters not only could be a promising driving force to obtain larger atomic-scale 1D and 2D nanostructures but also envisage interesting properties, particularly as electronic acceptor materials for energy applications.

Epitaxial Growth of Two-Dimensional Insulator Monolayer Honeycomb BeO

The emergence of two-dimensional (2D) materials launched a fascinating frontier of flatland electronics. Most crystalline atomic layer materials are based on layered van der Waals materials with weak interlayer bonding, which naturally leads to thermodynamically stable monolayers. We report the synthesis of a 2D insulator composed of a single atomic sheet of honeycomb structure BeO (h-BeO), although its bulk counterpart has a wurtzite structure. The h-BeO is grown by molecular beam epitaxy (MBE) on Ag(111) thin films that are also epitaxially grown on Si(111) wafers. Using scanning tunneling microscopy and spectroscopy (STM/S), the honeycomb BeO lattice constant is determined to be 2.65 Å with an insulating band gap of 6 eV. Our low-energy electron diffraction measurements indicate that the h-BeO forms a continuous layer with good crystallinity at the millimeter scale. Moiré pattern analysis shows the BeO honeycomb structure maintains long-range phase coherence in atomic registry even across Ag steps. We find that the interaction between the h-BeO layer and the Ag(111) substrate is weak by using STS and complementary density functional theory calculations. We not only demonstrate the feasibility of growing h-BeO monolayers by MBE, but also illustrate that the large-scale growth, weak substrate interactions, and long-range crystallinity make h-BeO an attractive candidate for future technological applications. More significantly, the ability to create a stable single-crystalline atomic sheet without a bulk layered counterpart is an intriguing approach to tailoring 2D electronic materials.

Chemical Reactivity of Supported ZnO Clusters: Undercoordinated Zinc and Oxygen Atoms as Active Sites

The growth of ZnO clusters supported by ZnO-bilayers on Ag(111) and the interaction of these oxide nanostructures with water have been studied by a multi-technique approach combining temperature-dependent infrared reflection absorption spectroscopy (IRRAS), grazing-emission X-ray photoelectron spectroscopy, and density functional theory calculations. Our results reveal that the ZnO bilayers exhibiting graphite-like structure are chemically inactive for water dissociation, whereas small ZnO clusters formed on top of these well-defined, yet chemically passive supports show extremely high reactivity - water is dissociated without an apparent activation barrier. Systematic isotopic substitution experiments using H2 16 O/D2 16 O/D2 18 O allow identification of various types of acidic hydroxyl groups. We demonstrate that a reliable characterization of these OH-species is possible via co-adsorption of CO, which leads to a red shift of the OD frequency due to the weak interaction via hydrogen bonding. The theoretical results provide atomic-level insight into the surface structure and chemical activity of the supported ZnO clusters and allow identification of the presence of under-coordinated Zn and O atoms at the edges and corners of the ZnO clusters as the active sites for H2 O dissociation.

Tunable electronic properties of the novel g-ZnO/1T-TiS2 vdW heterostructure by electric field and strain: crossovers in bandgap and band alignment types

A relatively new and promising method to tune properties of monolayers is by forming a heterostructure of them. Here, the van der Waals heterostructure of graphene-like zinc oxide (g-ZnO) and 1-trigonal titanium disulfide (1T-TiS2) was formed and its structural, electronic, and optical properties were studied in the framework of density functional theory. The dynamical stability of the heterostructure was confirmed based on its phonon band structure. An indirect (Γ → M) bandgap of 0.65 eV, a large built-in electric field (or a large potential drop of 3.12 eV), a type-II (staggered) band alignment, and a large conduction band offset of 2.94 eV were found to form across the interface, which are all desirable for potentially efficient separation of charge carriers. We showed also that the formation of the heterostructure largely enhances the almost-zero optical absorption of g-ZnO in visible and near-infrared regions, which is desirable for optoelectronic applications. By applying a perpendicular electric field, we could tune the bandgap value and the band alignment type (type-II → type-I) of the heterostructure. Finally, we showed that by applying compressive strain, one can change the band alignment type (type-II → type-I) and by applying tensile strain, the bandgap value could be tuned and a crossover occurs in the bandgap type (indirect → direct → indirect).

Electronic structure of Al, Ga, In and Cu doped ZnO/Cu(111) bilayer films

The effect of doping with group-III metals (Al, Ga and In) and Cu free standing and Cu(111) supported ZnO bilayer films has been investigated computationally by using the DFT+U method including dispersion contributions. The changes in the electronic properties of doped ZnO and ZnO/Cu(111) films have been tested by adsorbing CO probe molecules. The replacement of a lattice Zn ion in a free-standing ZnO bilayer by a group-III element generates an extra electron whose distribution depends on the dopant. In particular, while the excess electron is delocalized over the conduction band for Al or Ga doping, it is localized on the dopant in the case of In. The situation is different on the supported ZnO/Cu(111) film, where the extra electron is transferred to the underlying Cu support. While the CO adsorption energy at the doped sites in the ZnO bilayer is the same as in the ZnO/Cu(111) ultrathin films, CO exhibits a larger red-shift in the unsupported ZnO bilayer. The oxidation state of Cu replacing Zn in the unsupported ZnO films is 2+, Cu(3d9) state, while it is 1+, Cu(3d10) state, in the ZnO/Cu(111) supported films where a charge transfer from the supporting Cu metal to the Cu impurity occurs. Cu doping results in a stronger interaction with CO and a large red-shift of the CO stretching frequency. In this respect, Cu doping of ZnO/Cu(111) bilayer films could have interesting consequences in gas adsorption while doping with group-III elements does not lead to major changes of the adsorption properties when the free-standing ZnO films are compared to the supported ZnO/Cu(111) counterparts.

Imaging the ordering of a weakly adsorbed two-dimensional condensate: ambient-pressure microscopy and spectroscopy of CO2 molecules on rutile TiO2(110)

Disorder–order transitions found for CO₂ on titania.

IR spectroscopic investigations of chemical and photochemical reactions on metal oxides: bridging the materials gap

In this review, we highlight recent progress (2008–2016) in infrared reflection absorption spectroscopy (IRRAS) studies on oxide powders achieved by using different types of metal oxide single crystals as reference systems.

Local electronic structure, work function, and line defect dynamics of ultrathin epitaxial ZnO layers on a Ag(1 1 1) surface

Using combined low-temperature scanning tunneling microscopy and Kelvin probe force microscopy we studied the local electronic structure and work function change of the (0 0 0 1)-oriented epitaxial ZnO layers on a Ag(1 1 1) substrate. Scanning tunneling spectroscopy (STS) revealed that the conduction band minimum monotonically downshifts as the number of the ZnO layers increases up to 4 monolayers (ML). However, it was found by field emission resonance (FER) spectroscopy that the local work function of Ag(1 1 1) slightly decreases for 2 ML thick ZnO but it dramatically changes and drops by about 1.2 eV between 2 and 3 ML, suggesting a structural transformation of the ZnO layer. The spatial variation of the conduction band minimum and the local work function change were visualized at the nanometer scale by mapping the STS and FER intensities. Furthermore, we found that the ZnO layers contained line defects with a few tens of nm long, which can be removed by the injection of a tunneling electron into the conduction band.