Modulation of the ISFET response by an immunological reaction

Electrical cell-substrate impedance sensing with field-effect transistors is able to unravel cellular adhesion and detachment processes on a single cell level

We introduce a novel technique of impedimetric sensing of cellular adhesion, which might have the potential to supplement the well-known technique of Electrical Cell-substrate Impedance Sensing (ECIS) in cell culture assays. In contrast to the already commercialized ECIS method, we are using ion-sensitive field-effect transistor (ISFET) devices. The standard gold microelectrode size in ECIS is in the range of 100-250 μm in diameter. Reason for this limitation is that when downscaling the sensing electrodes, their effective impedance governed by the metal-liquid interface impedance is becoming very large and hence the currents to be measured are becoming very small reaching the limit of standard instrumentation. This is the main reason why typical assays with ECIS are focusing on applications like cell-cell junctions in confluent cultures. Single cell resolution is barely reachable with these systems. Here we use impedance spectroscopy with ISFET devices having gate dimensions of only 16 × 2 μm(2), which is enabling a real single cell resolution. We introduce an electrically equivalent circuit model, explain the measured effects upon single cell detachment, and present different cellular detachment scenarios. Our approach might supplement the field of ECIS with an alternative tool opening up a route for novel cell-substrate impedance sensing assays with so far unreachable lateral resolution.

ImmunoFET feasibility in physiological salt environments

Field-effect transistors (FETs) are solid-state electrical devices featuring current sources, current drains and semiconductor channels through which charge carriers migrate. FETs can be inexpensive, detect analyte without label, exhibit exponential responses to surface potential changes mediated by analyte binding, require limited sample preparation and operate in real time. ImmunoFETs for protein sensing deploy bioaffinity elements on their channels (antibodies), analyte binding to which modulates immunoFET electrical properties. Historically, immunoFETs were assessed infeasible owing to ion shielding in physiological environments. We demonstrate reliable immunoFET sensing of chemokines by relatively ion-impermeable III-nitride immunoHFETs (heterojunction FETs) in physiological buffers. Data show that the specificity of detection follows the specificity of the antibodies used as receptors, allowing us to discriminate between individual highly related protein species (human and murine CXCL9) as well as mixed samples of analytes (native and biotinylated CXCL9). These capabilities demonstrate that immunoHFETs can be feasible, contrary to classical FET-sensing assessment. FET protein sensors may lead to point-of-care diagnostics that are faster and cheaper than immunoassay in clinical, biotechnological and environmental applications.

High-k dielectric Al₂O₃ nanowire and nanoplate field effect sensors for improved pH sensing

Over the last decade, field-effect transistors (FETs) with nanoscale dimensions have emerged as possible label-free biological and chemical sensors capable of highly sensitive detection of various entities and processes. While significant progress has been made towards improving their sensitivity, much is yet to be explored in the study of various critical parameters, such as the choice of a sensing dielectric, the choice of applied front and back gate biases, the design of the device dimensions, and many others. In this work, we present a process to fabricate nanowire and nanoplate FETs with Al(2)O(3) gate dielectrics and we compare these devices with FETs with SiO(2) gate dielectrics. The use of a high-k dielectric such as Al(2)O(3) allows for the physical thickness of the gate dielectric to be thicker without losing sensitivity to charge, which then reduces leakage currents and results in devices that are highly robust in fluid. This optimized process results in devices stable for up to 8 h in fluidic environments. Using pH sensing as a benchmark, we show the importance of optimizing the device bias, particularly the back gate bias which modulates the effective channel thickness. We also demonstrate that devices with Al(2)O(3) gate dielectrics exhibit superior sensitivity to pH when compared to devices with SiO(2) gate dielectrics. Finally, we show that when the effective electrical silicon channel thickness is on the order of the Debye length, device response to pH is virtually independent of device width. These silicon FET sensors could become integral components of future silicon based Lab on Chip systems.

Immuno- and flow cytometric analytical methods for biotechnological research and process monitoring

In this article, the applications of immunoanalysis and flow cytometry for research and process monitoring in biotechnology are discussed. Brief reviews of the two analytical methods are followed by descriptions of actual applications in various areas of biotechnology. In the case of immunoanalysis, emphasis is placed on systems for on-line bioprocess monitoring, and examples are given for a thermostable pullulanase, a mouse IgG, and antithrombin III. Although flow cytometry is not currently an on-line analytical technique, its value as an off-line method is illustrated by examples of the measurement of shear stress effects, lipid content, and sterol content.

A critical evaluation of direct electrical protein detection methods

During the last decennia many protein-related electrical phenomena have been studied and applied in a variety of measuring systems, from simple metal electrodes with adsorbed proteins to sophisticated systems with lipid bilayers. Many of the investigations concern the monitoring of immuno reactions. The basic underlying electrical effects of the observed phenomena are the protein modulated dielectric constant, conductivity, electrical potential, ion permeability and ion mobility. In this paper special attention is paid to the capacitive measurements with EIS systems as well as impedance and potential measurements with FET devices. The Donnan theory is treated and applied to the static ImmunoFET operation, explaining the relatively small effects which have been reported. Finally, an alternative approach is described in which the ImmunoFET is applied in a dynamic way, to circumvent the drawbacks of the static measurements.