Transitional structures of the interface between graphene and 6H–SiC (0001)

A Review on Carrier Mobilities of Epitaxial Graphene on Silicon Carbide

Graphene growth by thermal decomposition of silicon carbide (SiC) is a technique that produces wafer-scale, single-orientation graphene on an insulating substrate. It is often referred to as epigraphene, and has been thought to be suitable for electronics applications. In particular, high-frequency devices for communication technology or large quantum Hall plateau for metrology applications using epigraphene are expected, which require high carrier mobility. However, the carrier mobility of as-grown epigraphene exhibit the relatively low values of about 1000 cm2/Vs. Fortunately, we can hope to improve this situation by controlling the electronic state of epigraphene by modifying the surface and interface structures. In this paper, the mobility of epigraphene and the factors that govern it will be described, followed by a discussion of attempts that have been made to improve mobility in this field. These understandings are of great importance for next-generation high-speed electronics using graphene.

High-Quality Few-Layer Graphene on Single-Crystalline SiC thin Film Grown on Affordable Wafer for Device Applications

Graphene is promising for next-generation devices. However, one of the primary challenges in realizing these devices is the scalable growth of high-quality few-layer graphene (FLG) on device-type wafers; it is difficult to do so while balancing both quality and affordability. High-quality graphene is grown on expensive SiC bulk crystals, while graphene on SiC thin films grown on Si substrates (GOS) exhibits low quality but affordable cost. We propose a new method for the growth of high-quality FLG on a new template named “hybrid SiC”. The hybrid SiC is produced by bonding a SiC bulk crystal with an affordable device-type wafer and subsequently peeling off the SiC bulk crystal to obtain a single-crystalline SiC thin film on the wafer. The quality of FLG on this hybrid SiC is comparable to that of FLG on SiC bulk crystals and much higher than of GOS. FLG on the hybrid SiC exhibited high carrier mobilities, comparable to those on SiC bulk crystals, as anticipated from the linear band dispersions. Transistors using FLG on the hybrid SiC showed the potential to operate in terahertz frequencies. The proposed method is suited for growing high-quality FLG on desired substrates with the aim of realizing graphene-based high-speed devices.

Graphene-Based Thermoacoustic Sound Source

Thermoacoustic (TA) effect has been discovered for more than 130 years. However, limited by the material characteristics, the performance of a TA sound source could not be compared with magnetoelectric and piezoelectric loudspeakers. Recently, graphene, a two-dimensional material with the lowest heat capacity per unit area, was discovered to have a good TA performance. Compared with a traditional sound source, graphene TA sound sources (GTASSs) have many advantages, such as small volume, no diaphragm vibration, wide frequency range, high transparency, good flexibility, and high sound pressure level (SPL). Therefore, graphene has a great potential as a next-generation sound source. Photoacoustic (PA) imaging can also be applied to the diagnosis and treatment of diseases using the photothermo-acoustic (PTA) effect. Therefore, in this review, we will introduce the history of TA devices. Then, the theory and simulation model of TA will be analyzed in detail. After that, we will talk about the graphene synthesis method. To improve the performance of GTASSs, many strategies such as lowering the thickness and using porous or suspended structures will be introduced. With a good PTA effect and large specific area, graphene PA imaging and drug delivery is a promising prospect in cancer treatment. Finally, the challenges and prospects of GTASSs will be discussed.

Controlled growth of boron-doped epitaxial graphene by thermal decomposition of a B4C thin film

We show that boron-doped epitaxial graphene can be successfully grown by thermal decomposition of a boron carbide thin film, which can also be epitaxially grown on a silicon carbide substrate. The interfaces of B₄C on SiC and graphene on B₄C had a fixed orientation relation, having a local stable structure with no dangling bonds. The first carbon layer on B₄C acts as a buffer layer, and the overlaying carbon layers are graphene. Graphene on B₄C was highly boron doped, and the hole concentration could be controlled over a wide range of 2 × 10¹³ to 2 × 10¹⁵ cm^-2. Highly boron-doped graphene exhibited a spin-glass behavior, which suggests the presence of local antiferromagnetic ordering in the spin-frustration system. Thermal decomposition of carbides holds the promise of being a technique to obtain a new class of wafer-scale functional epitaxial graphene for various applications.

Induced growth of quasi-free-standing graphene on SiC substrates

Free-standing graphene grown on SiC substrates is desirable for micro- and nano-electronic device applications. In this work, an induced growth method to fabricate quasi-free-standing graphene on SiC was proposed, where graphene nucleation sites were generated on the SiC substrate and active carbon sources were subsequently introduced to grow graphene centered along the established nucleation sites. The structure and morphology of the cultivated graphene were characterized by using X-ray photoelectron spectroscopy (XPS), Raman spectroscopy, and high-resolution transmission electron microscopy (HRTEM). Compared to the traditional epitaxial growth methods on SiC substrates, this approach shows a significant reduction of the buffer layer. This study provides an efficient method for growing quasi-free-standing graphene on SiC substrates and is believed to be able to broaden the application of graphene in electronic devices as SiC is an intrinsically outstanding wide bandgap semiconductor.

Quasi-free-standing graphene on a SiC substrate was directly prepared by using the induced graphene growth method.

One-step growth of multilayer-graphene hollow nanospheres via the self-elimination of SiC nuclei templates

We introduce a one-step growth method for producing multilayer-graphene hollow nanospheres via a high-temperature chemical vapor deposition process using tetramethylsilane as an organic precursor. When the SiC nuclei were grown under an excess carbon atmosphere, they were surrounded via desorption of the hydrocarbon gas species, and graphene layers formed on the surface of the SiC nuclei via the rearrangement of solid carbon during the heating and cooling. The core SiC nuclei were spontaneously removed by the subsequent thermal decomposition, which also supplied the carbon for the graphene layers. Hence, multilayer-graphene hollow nanospheres were acquired via a one-step process, which was simply controlled by the growth temperature. In this growth process, the SiC nuclei acted as both the template and carbon source for the formation of multilayer-graphene hollow nanospheres.

Interface and interaction of graphene layers on SiC(0001[combining macron]) covered with TiC(111) intercalation

It is important to understand the interface and interaction between the graphene layer, titanium carbide [TiC(111)] interlayer, and silicon carbide [SiC(0001[combining macron])] substrates in epitaxial growth of graphene on silicon carbide (SiC) substrates. In this study, the fully relaxed interfaces which consist of up to three layers of TiC(111) coatings on the SiC(0001[combining macron]) as well as the graphene layers interactions with these TiC(111)/SiC(0001[combining macron]) were systematically studied using the density functional theory-D2 (DFT-D2) method. The results showed that the two layers of TiC(111) coating with the C/C-terminated interfaces were thermodynamically more favorable than one or three layers of TiC(111) on the SiC(0001[combining macron]). Furthermore, the bonding of the Ti-hollow-site stacked interfaces would be a stronger link than that of the Ti-Fcc-site stacked interfaces. However, the formation of the C/Ti/C and Ti/C interfaces implied that the first upper carbon layer can be formed on TiC(111)/SiC(0001[combining macron]) using the decomposition of the weaker Ti-C and C-Si interfacial bonds. When growing graphene layers on these TiC(111)/SiC(0001[combining macron]) substrates, the results showed that the interaction energy depended not only on the thickness of the TiC(111) interlayer, but also on the number of graphene layers. Bilayer graphene on the two layer thick TiC(111)/SiC(0001[combining macron]) was thermodynamically more favorable than a monolayer or trilayer graphene on these TiC(111)/SiC(0001[combining macron]) substrates. The adsorption energies of the bottom graphene layers with the TiC(111)/SiC(0001[combining macron]) substrates increased with the decrease of the interface vertical distance. The interaction energies between the bottom, second and third layers of graphene on the TiC(111)/SiC(0001[combining macron]) were significantly higher than that of the freestanding graphene layers. All of these findings provided insight into the growth of epitaxial graphene on TiC(111)/SiC(0001[combining macron]) substrates and the design of graphene/TiC/SiC-based electronic devices.

Synthesis of Freestanding Graphene on SiC by a Rapid-Cooling Technique

Graphene has a negative thermal expansion coefficient; that is, when heated, the graphene lattice shrinks. On the other hand, the substrates typically used for graphene growth, such as silicon carbide, have a positive thermal expansion coefficient. Hence, on cooling graphene on SiC, graphene expands but SiC shrinks. This mismatch will physically break the atomic bonds between graphene and SiC. We have demonstrated that a graphenelike buffer layer on SiC can be converted to a quasifreestanding monolayer graphene by a rapid-cooling treatment. The decoupling of graphene from the SiC substrate was actually effective for reducing the electric carrier scattering due to interfacial phonons. In addition, the rapidly cooled graphene obtained in this way was of high-quality, strain-free, thermally stable, and strongly hole doped. This simple, classical, but quite novel technique for obtaining quasifreestanding graphene could open a new path towards a viable graphene-based semiconductor industry.

Catalysis with two-dimensional materials and their heterostructures

Graphene and other 2D atomic crystals are of considerable interest in catalysis because of their unique structural and electronic properties. Over the past decade, the materials have been used in a variety of reactions, including the oxygen reduction reaction, water splitting and CO2 activation, and have been shown to exhibit a range of catalytic mechanisms. Here, we review recent advances in the use of graphene and other 2D materials in catalytic applications, focusing in particular on the catalytic activity of heterogeneous systems such as van der Waals heterostructures (stacks of several 2D crystals). We discuss the advantages of these materials for catalysis and the different routes available to tune their electronic states and active sites. We also explore the future opportunities of these catalytic materials and the challenges they face in terms of both fundamental understanding and the development of industrial applications.

Synthesis and applications of carbon nanomaterials for energy generation and storage

The world is facing an energy crisis due to exponential population growth and limited availability of fossil fuels. Over the last 20 years, carbon, one of the most abundant materials found on earth, and its allotrope forms such as fullerenes, carbon nanotubes and graphene have been proposed as sources of energy generation and storage because of their extraordinary properties and ease of production. Various approaches for the synthesis and incorporation of carbon nanomaterials in organic photovoltaics and supercapacitors have been reviewed and discussed in this work, highlighting their benefits as compared to other materials commonly used in these devices. The use of fullerenes, carbon nanotubes and graphene in organic photovoltaics and supercapacitors is described in detail, explaining how their remarkable properties can enhance the efficiency of solar cells and energy storage in supercapacitors. Fullerenes, carbon nanotubes and graphene have all been included in solar cells with interesting results, although a number of problems are still to be overcome in order to achieve high efficiency and stability. However, the flexibility and the low cost of these materials provide the opportunity for many applications such as wearable and disposable electronics or mobile charging. The application of carbon nanotubes and graphene to supercapacitors is also discussed and reviewed in this work. Carbon nanotubes, in combination with graphene, can create a more porous film with extraordinary capacitive performance, paving the way to many practical applications from mobile phones to electric cars. In conclusion, we show that carbon nanomaterials, developed by inexpensive synthesis and process methods such as printing and roll-to-roll techniques, are ideal for the development of flexible devices for energy generation and storage - the key to the portable electronics of the future.

Rotationally Commensurate Growth of MoS2 on Epitaxial Graphene

Atomically thin MoS2/graphene heterostructures are promising candidates for nanoelectronic and optoelectronic technologies. Among different graphene substrates, epitaxial graphene (EG) on SiC provides several potential advantages for such heterostructures, including high electronic quality, tunable substrate coupling, wafer-scale processability, and crystalline ordering that can template commensurate growth. Exploiting these attributes, we demonstrate here the thickness-controlled van der Waals epitaxial growth of MoS2 on EG via chemical vapor deposition, giving rise to transfer-free synthesis of a two-dimensional heterostructure with registry between its constituent materials. The rotational commensurability observed between the MoS2 and EG is driven by the energetically favorable alignment of their respective lattices and results in nearly strain-free MoS2, as evidenced by synchrotron X-ray scattering and atomic-resolution scanning tunneling microscopy (STM). The electronic nature of the MoS2/EG heterostructure is elucidated with STM and scanning tunneling spectroscopy, which reveals bias-dependent apparent thickness, band bending, and a reduced band gap of ∼0.4 eV at the monolayer MoS2 edges.

Processes for non-destructive transfer of graphene: widening the bottleneck for industrial scale production

The exceptional charge-transport, mechanical, and barrier properties of graphene are well known. High-quality films of single-layer graphene produced over large areas, however, are extremely expensive. The high cost of graphene precludes its use in industries-such as transparent electrodes and flexible packaging-that might take full advantage of its properties. This minireview presents several strategies for the transfer of graphene from the substrates used for growth to substrates used for the final application. Each strategy shares the characteristic of being non-destructive: that is, the growth substrate remains reusable for further synthesis of new graphene. These processes have the potential to lower significantly the costs of manufacturing graphene, to increase production yields, and to minimize environmental impact. This article is divided into sections on (i) the synthesis of high-quality single-layer graphene and (ii) its non-destructive transfer to a host substrate. Section (ii) is further divided according to the substrate from which graphene is transferred: single-crystalline wafers or flexible copper foils. We also comment, wherever possible, on defects produced as a result of the transfer, and potential strategies to mitigate these defects. We conclude that several methods for the green synthesis and transfer of graphene have several of the right characteristics to be useful in industrial scale production.

Optimized growth of graphene on SiC: from the dynamic flip mechanism

Thermal decomposition of single-crystal SiC is one of the popular methods for growing graphene. However, the mechanism of graphene formation on the SiC surface is poorly understood, and the application of this method is also hampered by its high growth temperature. In this study, based on the ab initio calculations, we propose a vacancy assisted Si-C bond flipping model for the dynamic process of graphene growth on SiC. The fact that the critical stages during growth take place at different energy costs allows us to propose an energetic-beam controlled growth method that not only significantly lowers the growth temperature but also makes it possible to grow high-quality graphene with the desired size and patterns directly on the SiC substrate.

Synthesis of two-dimensional materials by selective extraction

CONSPECTUS: Two-dimensional (2D) materials have attracted much attention in the past decade. They offer high specific surface area, as well as electronic structure and properties that differ from their bulk counterparts due to the low dimensionality. Graphene is the best known and the most studied 2D material, but metal oxides and hydroxides (including clays), dichalcogenides, boron nitride (BN), and other materials that are one or several atoms thick are receiving increasing attention. They may deliver a combination of properties that cannot be provided by other materials. The most common synthesis approach in general is by reacting different elements or compounds to form a new compound. However, this approach does not necessarily work well for low-dimensional structures, since it favors formation of energetically preferred 3D (bulk) solids. Many 2D materials are produced by exfoliation of van der Waals solids, such as graphite or MoS2, breaking large particles into 2D layers. However, these approaches are not universal; for example, 2D transition metal carbides cannot be produced by any of them. An alternative but less studied way of material synthesis is the selective extraction process, which is based on the difference in reactivity and stability between the different components (elements or structural units) of the original material. It can be achieved using thermal, chemical, or electrochemical processes. Many 2D materials have been synthesized using selective extraction, such as graphene from SiC, transition metal oxides (TMO) from layered 3D salts, and transition metal carbides or carbonitrides (MXenes) from MAX phases. Selective extraction synthesis is critically important when the bonds between the building blocks of the material are too strong (e.g., in carbides) to be broken mechanically in order to form nanostructures. Unlike extractive metallurgy, where the extracted metal is the goal of the process, selective extraction of one or more elements from the precursor materials releases 2D structures. In this Account, in addition to graphene and TMO, we focused on MXenes as an example for the use of selective extraction synthesis to produce novel 2D materials. About 10 new carbides and carbonitrides of transition metals have been produced by this method in the past 3 years. They offer an unusual combination of metallic conductivity and hydrophilicity and show very attractive electrochemical properties. We hope that this Account will encourage researchers to extend the use of selective extraction to other layered material systems that in turn will result in expanding the world of nanomaterials in general and 2D materials in particular, generating new materials that cannot be produced by other means.

Atomic structure of epitaxial graphene sidewall nanoribbons: flat graphene, miniribbons, and the confinement gap

Graphene nanoribbons grown on sidewall facets of SiC have demonstrated exceptional quantized ballistic transport up to 15 μm at room temperature. Angular-resolved photoemission spectroscopy (ARPES) has shown that the ribbons have the band structure of charge neutral graphene, while bent regions of the ribbon develop a bandgap. We present scanning tunneling microscopy and transmission electron microscopy of armchair nanoribbons grown on recrystallized sidewall trenches etched in SiC. We show that the nanoribbons consist of a single graphene layer essentially decoupled from the facet surface. The nanoribbons are bordered by 1-2 nm wide bent miniribbons at both the top and bottom edges of the nanoribbons. We establish that nanoscale confinement in the graphene miniribbons is the origin of the local large band gap observed in ARPES. The structural results presented here show how this gap is formed and provide a framework to help understand ballistic transport in sidewall graphene.

Graphene layers on Si-face and C-face surfaces and interaction with Si and C atoms in layer controlled graphene growth on SiC substrates

It is important to understand the interface and interaction between graphene layers and SiC surfaces as well as the interaction of key intermediate Si and C atoms with these surfaces and interfaces in epitaxial graphene growth on SiC substrates.

Epitaxial graphene on SiC{0001}: advances and perspectives

We review here recent progress on epitaxial graphene grown on a SiC substrate. Epitaxial graphene can be easily grown by heating the SiC single crystal in a high vacuum or in an inert gas atmosphere. The SiC surfaces used for graphene growth contain Si- and C-terminated faces. On the Si-face, homogeneous and clean graphene can be grown with a controlled number of layers, and the carrier mobility reaches as high as several m(2) V s(-1), although this is reduced by the presence of the substrate steps. On the C-face, although the number of layers is not homogeneous, twisted bilayer graphene can be grown, which is expected to be the technique of choice to modify the electronic structure of graphene. From the application point of view, graphene on SiC will be the platform used to fabricate high-speed electronic devices and dense graphene nanoribbon arrays, which will be used to introduce a bandgap.

High entropy alloy mediated growth of graphene

Pyrolysis of acetylene over thin films made of Cu_xFeCoNiMn yields graphene and its sheet dimensions are found to be controlled by x. A monolayer structure forms at x = 0.5 and the sheet size reaches a value as large as 600 μm².

Thermodynamic equilibrium conditions of graphene films on SiC

First-principles surface phase diagrams reveal that epitaxial monolayer graphene films on the Si side of 3C-SiC(111) can exist as thermodynamically stable phases in a narrow range of experimentally controllable conditions, defining a path to the highest quality graphene films. Our calculations are based on a van der Waals corrected density functional. The full, experimentally observed (6sqrt[3]×6sqrt[3])-R30° supercells for zero- to trilayer graphene are essential to describe the correct interface geometries and the relative stability of surface phases and possible defects.

Structural and electronic properties of graphene-ZnO interfaces: dispersion-corrected density functional theory investigations

Detailed first-principles computations were performed on the geometric and electronic properties of the interfaces between graphene and ZnO polar surfaces. A notable van der Waals force exists at the interface, and charge transfer occurs between graphene and ZnO as a result of the difference in their work functions. The Dirac point of graphene remains intact despite its adsorption on ZnO, implying that its interaction with ZnO does not affect the superior conductivity of graphene. Excited electrons within the energy range of 0-3 eV (versus Fermi energy) in the hybrid systems are mainly accumulated on graphene. The computations provide a theoretical explanation for the good performance of graphene/ZnO hybrid materials in photocatalysts and solar cells.

Epitaxial growth of boron-doped graphene by thermal decomposition of B4C

We grew graphene by thermal decomposition of B(4)C and investigated its features by high-resolution transmission electron microscope observations. At temperatures higher than 1600 °C in a vacuum, B(4)C decomposes and graphene forms epitaxially on its surface. The number and the morphology of the graphene layers depend on the surface orientation. An electron diffraction technique revealed the presence of a superstructure with a two-times larger unit cell, which is consistent with the structure of BC(3). We have directly confirmed boron in the graphene layers by electron energy loss spectroscopy measurements and boron-mapping experiments.

Patterned growth of graphene over epitaxial catalyst

Rectangle- and triangle-shaped microscale graphene films are grown on epitaxial Co films deposited on single-crystal MgO substrates with (001) and (111) planes, respectively. A thin film of Co or Ni metal is epitaxially deposited on a MgO substrate by sputtering while heating the substrate. Thermal decomposition of polystyrene over this epitaxial metal film in vacuum gives rectangular or triangular pit structures whose orientation and shape are strongly dependent on the crystallographic orientation of the MgO substrate. Raman mapping measurements indicate preferential formation of few-layer graphene films inside these pits. The rectangular graphene films are transferred onto a SiO(2)/Si substrate while maintaining the original shape and field-effect transistors are fabricated using the transferred films. These findings on the formation of rectangular/triangular graphene give new insights on the formation mechanism of graphene and can be applied for more advanced/controlled graphene growth.

Surface-energy engineering of graphene

Contact angle goniometry is conducted for epitaxial graphene on SiC. Although only a single layer of epitaxial graphene exists on SiC, the contact angle drastically changes from 69 degrees on SiC substrates to 92 degrees on graphene. It is found that there is no thickness dependence of the contact angle from the measurements of single-, bi-, and multilayer graphene and highly ordered pyrolytic graphite (HOPG). After graphene is treated with oxygen plasma, the level of damage is investigated by Raman spectroscopy and the correlation between the level of disorder and wettability is reported. By using a low-power oxygen plasma treatment, the wettability of graphene is improved without additional damage, which can solve the adhesion issues involved in the fabrication of graphene devices.

Nucleation of epitaxial graphene on SiC(0001)

A promising route for the synthesis of large-area graphene, suitable for standard device fabrication techniques, is the sublimation of silicon from silicon carbide at elevated temperatures (>1200 degrees C). Previous reports suggest that graphene nucleates along the (110n) plane, known as terrace step edges, on the silicon carbide surface. However, to date, a fundamental understanding of the nucleation of graphene on silicon carbide is lacking. We provide the first direct evidence that nucleation of epitaxial graphene on silicon carbide occurs along the (110n) plane and show that the nucleated graphene quality improves as the synthesis temperature is increased. Additionally, we find that graphene on the (110n) plane can be significantly thicker than its (0001) counterpart and appears not to have a thickness limit. Finally, we find that graphene along the (110n) plane can contain a high density of structural defects, often the result of the underlying substrate, which will undoubtedly degrade the electronic properties of the material. Addressing the presence of non-uniform graphene that may contain structural defects at terrace step edges will be key to the development of a large-scale graphene technology derived from silicon carbide.