Atomic layer deposition enabling higher efficiency solar cells: A review

Multifunctional carbon nanotubes coated stainless steel mesh for electrowetting, hydrophobic, and dye absorption behavior

Electrowetting behaviour for carbon nanotubes (CNT) grown on stainless steel mesh was investigated. The effect of temperature, time, and applied bias voltage on the contact angle of water droplets was studied. The impact of temperature variation on contact angle was also performed for the temperature ranging from 25 to 70 °C. A decrement of contact angle by 68% was observed for the mentioned range indicating a transition from a hydrophobic to hydrophilic nature. A similar trend was observed on the application of electric potential to the CNT-modified stainless-steel mesh ranging from 0 to 8 V with a transition of contact angle from 146 to 30 deg respectively. A comparative analysis for the contact angle variation with time for CNT-coated mesh and uncoated mesh was performed for 180 min. It is observed that uncoated mesh shows a reduction in contact angle to 0 deg with time while the CNT coated mesh shows surplus hydrophobicity with a 2 deg decrement in the extent of time. CNT-modified mesh successfully absorbs 95% of rhodamine B (RB) dye and detergent from water in 10 cycles.

Influence of Efficient Thickness of Antireflection Coating Layer of HfO2 for Crystalline Silicon Solar Cell

Anti-reflective coating (ARC) layers on silicon (Si) solar cells usually play a vital role in the amount of light absorbed into the cell and protect the device from environmental degradation. This paper reports on the thickness optimization of hafnium oxide (HfO2) as an ARC layer for high-performance Si solar cells with PC1D simulation analysis. The deposition of the HfO2 ARC layer on Si cells was carried out with a low-cost sol-gel process followed by spin coating. The thickness of the ARC layer was controlled by varying the spinning speed. The HfO2 ARC with a thickness of 70 nm possessed the lowest average reflectance of 6.33% by covering wavelengths ranging from 400–1000 nm. The different thicknesses of HfO2 ARC layers were used as input parameters in a simulation study to explore the photovoltaic characteristics of Si solar cells. The simulation findings showed that, at 70 nm thickness, Si solar cells had an exceptional external quantum efficiency (EQE) of 98% and a maximum power conversion efficiency (PCE) of 21.15%. The thicknesses of HfO2 ARC considerably impacted the photovoltaic (PV) characteristics of Si solar cells, leading to achieving high-performance solar cells.

Entropy-Driven Self-Healing of Metal Oxides Assisted by Polymer-Inorganic Hybrid Materials

Enabling self-healing of materials is crucially important for saving resources and energy in numerous emerging applications. While strategies for the self-healing of polymers are advanced, mechanisms for semiconducting inorganic materials are scarce due to the lack of suitable healing agents. Here a concept for the self-healing of metal oxides is developed. This concept consists of metal oxide nanoparticle growth inside the bulk of halogenated polymers and their subsequent entropy-driven migration to externally induced defect sites, leading to recovery of the defect. Herein, it is demonstrated that the pool of self-healing materials is expanded to include semiconductors, thereby increasing the reliability and sustainability of functional materials through the use of metal oxides. It is revealed that electrical properties of tin-doped indium oxide can be partially restored upon healing. Such properties are of immediate interest for the further development of transparent flexible electrodes.

Two-Dimensional Nanomaterials for Boosting the Performance of Organic Solar Cells

The thin-film organic solar cells (OSCs) are currently one of the most promising photovoltaic technologies to effectively harvest the solar energy due to their attractive features of mechanical flexibility, light weight, low-cost manufacturing, and solution-processed large-scale fabrication, etc. However, the relative insufficient light absorption, short exciton diffusion distance, and low carrier mobility of the OSCs determine the power conversion efficiency (PCE) of the devices are relatively lower than their inorganic photovoltaic counterparts. To conquer the challenges, the two-dimensional (2D) nanomaterials, which have excellent photoelectric properties, tunable energy band structure, and solvent compatibility etc., exhibit the great potential to enhance the performance of the OSCs. In this review, we summarize the most recent successful applications of the 2D materials, including graphene, black phosphorus, transition metal dichalcogenides, and g-C3N4, etc., adapted in the charge transporting layer, the active layer, and the electrode of the OSCs, respectively, for boosting the PCE and stability of the devices. The strengths and weaknesses of the 2D materials in the application of OSCs are also reviewed in details. Additionally, the challenges, commercialization potentials, and prospects for the further development of 2D materials-based OSCs are outlined in the end.

SILAR Deposition of Metal Oxide Nanostructured Films

Methods for the fabrication of thin films with well controlled structure and properties are of great importance for the development of functional devices for a large range of applications. SILAR, the acronym for Successive Ionic Layer Adsorption and Reaction, is an evolution and combination of two other deposition methods, the Atomic Layer Deposition and Chemical Bath Deposition. Due to a relative simplicity and low cost, this method has gained increasing interest in the scientific community. There are, however, several aspects related to the influence of the many parameters involved, which deserve further deepening. In this review article, the basis of the method, its application to the fabrication of thin films, the importance of experimental parameters, and some recent advances in the application of oxide films are reviewed. At first the fundamental theoretical bases and experimental concepts of SILAR are discussed. Then, the fabrication of chalcogenides and metal oxides is reviewed, with special emphasis to metal oxides, trying to extract general information on the effect of experimental parameters on structural, morphological and functional properties. Finally, recent advances in the application of oxide films prepared by SILAR are described, focusing on supercapacitors, transparent electrodes, solar cells, and photoelectrochemical devices.

ZnO nucleation into trititanate nanotubes by ALD equipment techniques, a new way to functionalize layered metal oxides

In this contribution, we explore the potential of atomic layer deposition (ALD) techniques for developing new semiconductor metal oxide composites. Specifically, we investigate the functionalization of multi-wall trititanate nanotubes, H₂Ti₃O₇ NTs (sample T1) with zinc oxide employing two different ALD approaches: vapor phase metalation (VPM) using diethylzinc (Zn(C₂H₅)₂, DEZ) as a unique ALD precursor, and multiple pulsed vapor phase infiltration (MPI) using DEZ and water as precursors. We obtained two different types of tubular H₂Ti₃O₇ species containing ZnO in their structures. Multi-wall trititanate nanotubes with ZnO intercalated inside the tube wall sheets were the main products from the VPM infiltration (sample T2). On the other hand, MPI (sample T3) principally leads to single-wall nanotubes with a ZnO hierarchical bi-modal functionalization, thin film coating, and surface decorated with ZnO particles. The products were mainly characterized by electron microscopy, energy dispersive X-ray, powder X-ray diffraction, Fourier transform infrared spectroscopy, and X-ray photoelectron spectroscopy. An initial evaluation of the optical characteristics of the products demonstrated that they behaved as semiconductors. The IR study revealed the role of water, endogenous and/or exogenous, in determining the structure and properties of the products. The results confirm that ALD is a versatile tool, promising for developing tailor-made semiconductor materials.

Plasma-Enhanced Atomic Layer Deposition of TiN Thin Films as an Effective Se Diffusion Barrier for CIGS Solar Cells

Plasma-enhanced atomic layer deposition (PEALD) of TiN thin films were investigated as an effective Se diffusion barrier layer for Cu (In, Ga) Se₂ (CIGS) solar cells. Before the deposition of TiN thin film on CIGS solar cells, a saturated growth rate of 0.67 Å/cycle was confirmed using tetrakis(dimethylamido)titanium (TDMAT) and N₂ plasma at 200 °C. Then, a Mo (≈30 nm)/PEALD-TiN (≈5 nm)/Mo (≈600 nm) back contact stack was fabricated to investigate the effects of PEALD-TiN thin films on the Se diffusion. After the selenization process, it was revealed that ≈5 nm-thick TiN thin films can effectively block Se diffusion and that only the top Mo layer prepared on the TiN thin films reacted with Se to form a MoSe₂ layer. Without the TiN diffusion barrier layer, however, Se continuously diffused along the grain boundaries of the entire Mo back contact electrode. Finally, the adoption of a TiN diffusion barrier layer improved the photovoltaic efficiency of the CIGS solar cell by approximately 10%.

High-Temperature Atomic Layer Deposition of GaN on 1D Nanostructures

Silica nanosprings (NS) were coated with gallium nitride (GaN) by high-temperature atomic layer deposition. The deposition temperature was 800 °C using trimethylgallium (TMG) as the Ga source and ammonia (NH₃) as the reactive nitrogen source. The growth of GaN on silica nanosprings was compared with deposition of GaN thin films to elucidate the growth properties. The effects of buffer layers of aluminum nitride (AlN) and aluminum oxide (Al₂O₃) on the stoichiometry, chemical bonding, and morphology of GaN thin films were determined with X-ray photoelectron spectroscopy (XPS), high-resolution x-ray diffraction (HRXRD), and atomic force microscopy (AFM). Scanning and transmission electron microscopy of coated silica nanosprings were compared with corresponding data for the GaN thin films. As grown, GaN on NS is conformal and amorphous. Upon introducing buffer layers of Al₂O₃ or AlN or combinations thereof, GaN is nanocrystalline with an average crystallite size of 11.5 ± 0.5 nm. The electrical properties of the GaN coated NS depends on whether or not a buffer layer is present and the choice of the buffer layer. In addition, the IV curves of GaN coated NS and the thin films (TF) with corresponding buffer layers, or lack thereof, show similar characteristic features, which supports the conclusion that atomic layer deposition (ALD) of GaN thin films with and without buffer layers translates to 1D nanostructures.

Air Annealing Effect on Oxygen Vacancy Defects in Al-doped ZnO Films Grown by High-Speed Atmospheric Atomic Layer Deposition

In this study, aluminum-doped zinc oxide (Al:ZnO) thin films were grown by high-speed atmospheric atomic layer deposition (AALD), and the effects of air annealing on film properties are investigated. The experimental results show that the thermal annealing can significantly reduce the amount of oxygen vacancies defects as evidenced by X-ray photoelectron spectroscopy spectra due to the in-diffusion of oxygen from air to the films. As shown by X-ray diffraction, the annealing repairs the crystalline structure and releases the stress. The absorption coefficient of the films increases with the annealing temperature due to the increased density. The annealing temperature reaching 600 °C leads to relatively significant changes in grain size and band gap. From the results of band gap and Hall-effect measurements, the annealing temperature lower than 600 °C reduces the oxygen vacancies defects acting as shallow donors, while it is suspected that the annealing temperature higher than 600 °C can further remove the oxygen defects introduced mid-gap states.

Bilayer MoOX/CrOX Passivating Contact Targeting Highly Stable Silicon Heterojunction Solar Cells

Molybdenum oxide (MoO_X, X < 3) has been successfully demonstrated as an efficient passivating hole-selective contact in crystalline Si (c-Si) heterojunction solar cells because of its large bandgap (∼3.2 eV) and work function (∼6.9 eV). However, the severe performance degradation coming from the instability of the MoO_X and its interfaces has not been well addressed. In this work, we started with a c-Si(p)/MoO_X heterojunction solar cell that yielded a power conversion efficiency (PCE) of 15.86%, in which the MoO_X film was synthesized by industry-compatible atomic layer deposition (ALD). The initial PCE dropped to 10.20% after 2 days because of severe migration of O and Ag at the MoO_X/Ag interface. We solved this by the insertion of a CrO_X layer between the MoO_X layer and the Ag electrode. The solar cell was found to be stable for more than 8 months in air because of the suppression of interface degradation. Our work demonstrates an effective way of improving the stability of silicon solar cells with transition metal oxide carrier selective contacts.