Boron nanowires synthesized by laser ablation at high temperature

Roadmap for Borophene Gas Sensors

Borophene, a two-dimensional allotrope of boron, has emerged as a promising material for gas sensing because of its exceptional electronic properties and high surface reactivity. This review comprehensively overviews borophene synthesis methods, properties, and sensing applications. However, it is crucial to acknowledge the substantial gap between the abundance of theoretical literature and the limited experimental studies. While theoretical investigations have elucidated the stability and remarkable sensing capabilities of various borophene polymorphs across different gases, significant experimental challenges have hindered the translation of these theoretical predictions into practical devices. Consequently, this review carefully studies these challenges and shortcomings that are jeopardizing the practical implementation of borophene in real-world settings. Specifically, four key issues are thoroughly studied, such as superficial borophene oxidation upon exposure to the air, interference from relative humidity on gas molecule detection, lack of selectivity, and synthesis scalability. Finally, novel strategies are proposed to overcome these bottlenecks. By adopting these approaches, borophene can pave the way to drive the advancement of the next generation of sensing devices.

Monoelemental two-dimensional boron nanomaterials beyond theoretical simulations: From experimental preparation, functionalized modification to practical applications

During the past decade, there is an explosive growth of theoretical and computational studies on 2D boron-based nanomaterials. In terms of extensive predictions from theoretical simulations, borophene, boron nanosheets and 2D boron derivatives show excellent structural, electronic, photonic and nonlinear optical characteristics, and potential applications in a wide range of fields. In recent years, previous studies have reported the successful experimental preparations, superior properties, multi-functionalized modifications of various 2D boron and its derivatives, which show many practical applications in significant fields. To further promote the ever-increasing experimental studies, this present review systematically summarizes recent progress on experimental preparation methods, functionalized modification strategies and practical applications of 2D boron-based nanomaterials and multifunctional derivatives. Firstly, this review summarizes the experimental preparation methods, including molecular beam epitaxy, chemical vapor deposition, liquid-phase exfoliation, chemical reaction, and other auxiliary methods. Then, various strategies for functionalized modification are introduced overall, focusing on borophene derivatives, boron-based nanosheets, atom-introduced, chemically-functionalized borophene and boron nanosheets, borophene or boron nanosheet-based heterostructures, and other functionalized 2D boron nanomaterials. Subsequently, various potential applications are discussed in detail, involving energy storage, catalysis conversion, photonics, optoelectronics, sensors, bio-imaging, biomedicine therapy, and adsorption. We comment the state-of-the-art related studies concisely, and also discuss the current status, probable challenges and perspectives rationally. This review is timely, comprehensive, in-depth and highly attractive for scientists from multiple disciplines and scientific fields, and can facilitate further development of advanced functional low-dimensional nanomaterials and multi-functionalized systems toward high-performance practical applications in significant fields.

Synthesis and solar blind photosensitivity of crystalline boron nanowires

Herein, single crystalline boron nanowires (BNWs) have been synthesized by chemical vapor transport using boron element as boron source, iodine as transport agent, and Au as catalyst. The results demonstrate that BNWs can be all formed at 600 °C-950 °C for 2 h, and possess rhombohedral crystal structure (β-boron). The NWs have diameters from several to hundreds of nanometers, and lengths from several to hundreds of microns. A single nanowire has been fabricated to field effect transistor (FET) which shows excellent solar blind photosensitivity and selectivity. The photo/dark current ratio and photoresponsitity is 1.14 and 97.6 mA W^-1at a bias of 5 V under light illumination of 254 nm with 0.42 mW cm^-2, respectively, and both the rising and decay time of the on-off currents are 4.6 s and 10.3 s, respectively. When the FET is used as a personal breath sensor, the ratio of exsufflating and inhaling currents is 2.7, rising and decay time of the breath currents are 0.4 s and 2.2 s, respectively. So the BNWs are important sense materials.

Unified Model for Laser Doping of Silicon from Precursors

Laser doping of silicon with the help of precursors is well established in photovoltaics. Upon illumination with the constant or pulsed laser beam, the silicon melts and doping atoms from the doping precursor diffuse into the melted silicon. With the proper laser parameters, after resolidification, the silicon is doped without any lattice defects. Depending on laser energy and on the kind of precursor, the precursor either melts or evaporates during the laser process. For high enough laser energies, even parts of the silicon’s surface evaporate. Here, we present a unified model and simulation program, which considers all these cases. We exemplify our model with experiments and simulations of laser doping from a boron oxide precursor layer. In contrast to previous models, we are able to predict not only the width and depth of the patterns on the deformed silicon surface but also the doping profiles over a wide range of laser energies. In addition, we also show that the diffusion of the boron atoms in the molten Si is boosted by a thermally induced convection in the silicon melt: the Gaussian intensity distribution of the laser beam increases the temperature-gradient-induced surface tension gradient, causing the molten Si to circulate by Marangoni convection. Laser pulse energy densities above H > 2.8 J/cm² lead not only to evaporation of the precursor, but also to a partial evaporation of the molten silicon. Without considering the evaporation of Si, it is not possible to correctly predict the doping profiles for high laser energies. About 50% of the evaporated materials recondense and resolidify on the wafer surface. The recondensed material from each laser pulse forms a dopant source for the subsequent laser pulses.

Inorganic Boron-Based Nanostructures: Synthesis, Optoelectronic Properties, and Prospective Applications

Inorganic boron-based nanostructures have great potential for field emission (FE), flexible displays, superconductors, and energy storage because of their high melting point, low density, extreme hardness, and good chemical stability. Until now, most researchers have been focused on one-dimensional (1D) boron-based nanostructures (rare-earth boride (REB₆) nanowires, boron nanowires, and nanotubes). Currently, two-dimensional (2D) borophene attracts most of the attention, due to its unique physical and chemical properties, which make it quite different from its corresponding bulk counterpart. Here, we offer a comprehensive review on the synthesis methods and optoelectronics properties of inorganic boron-based nanostructures, which are mainly concentrated on 1D rare-earth boride nanowires, boron monoelement nanowires, and nanotubes, as well as 2D borophene and borophane. This review paper is organized as follows. In Section I, the synthesis methods of inorganic boron-based nanostructures are systematically introduced. In Section II, we classify their optical and electrical transport properties (field emission, optical absorption, and photoconductive properties). In the last section, we evaluate the optoelectronic behaviors of the known inorganic boron-based nanostructures and propose their future applications.

The Growth Methods and Field Emission Studies of Low-Dimensional Boron-Based Nanostructures

Based on the morphology characteristics, low-dimensional (LD) nanostructures with high aspect ratio can be usually divided into nanowire, nanocone, nanotube, nanorod, nanoribbon, nanobelt and so on. Among numerous LD nanostructures, boron-based nanostructures attracted much interest in recent years because they have high melting-point, large electric and thermal conductivity, and low work function. Compared to traditional thermal emission, field emission (FE) has notable advantages, such as lower power dissipation, longer working life, room-temperature operation, higher brightness and faster switching speed. Most studies reveal they have lower turn-on and threshold fields as well as high current density, which are believed as ideal cold cathode nanomaterials. In this review, we will firstly introduce the growth methods of LD boron-based nanostructures (boron monoelement and rare-earth metal hexaboride). Then, we will discuss their FE properties and applications. At last, the conclusions and outlook will be summarized based on the above studies.

Two-dimensional boron: structures, properties and applications

Situated between metals and non-metals in the periodic table, boron is one of the most chemically versatile elements, forming at least sixteen bulk polymorphs composed of interlinked boron polyhedra. In low-dimensionality, boron chemistry remains or becomes even more intriguing since boron clusters with several to tens of atoms favor planar or cage-like structures, which are similar to their carbon counterparts in terms of conformation and electronic structure. The similarity between boron and carbon has raised a question of whether there exists stable two-dimensional (2D) boron, as a conceptual precursor, from which other boron nanostructures may be built. Here, we review the current theoretical and experimental progress in realizing boron atomic layers. Starting by describing a decade-long effort towards understanding the size-dependent structures of boron clusters, we present how theory plays a role in extrapolating boron clusters into 2D form, from a freestanding state to that on substrates, as well as in exploring practical routes for their synthesis that recently culminated in experimental realization. While 2D boron has been revealed to have unusual mechanical, electronic and chemical properties, materializing its potential in practical applications remains largely impeded by lack of routes towards transfer from substrates and controlled synthesis of quality samples.

Recent progress in boron nanomaterials

Various types of zero, one, and two-dimensional boron nanomaterials such as nanoclusters, nanowires, nanotubes, nanobelts, nanoribbons, nanosheets, and monolayer crystalline sheets named borophene have been experimentally synthesized and identified in the last 20 years. Owing to their low dimensionality, boron nanomaterials have different bonding configurations from those of three-dimensional bulk boron crystals composed of icosahedra or icosahedral fragments. The resulting intriguing physical and chemical properties of boron nanomaterials are fascinating from the viewpoint of material science. Moreover, the wide variety of boron nanomaterials themselves could be the building blocks for combining with other existing nanomaterials, molecules, atoms, and/or ions to design and create materials with new functionalities and properties. Here, the progress of the boron nanomaterials is reviewed and perspectives and future directions are described.

Growth of single crystalline boron nanotubes in a Cu alloy

Herein, we report the successful synthesis of single crystalline boron nanotubes in a Cu alloy via a novel and simple direct melt reaction process.

Low-dimensional boron structures based on icosahedron B₁₂

One-dimensional icosahedral boron chains and two-dimensional icosahedral boron sheets (icosahedral α, δ6, and δ4 sheets) that contain icosahedra B12 as their building units have been predicted in a computer simulation study using a state-of-the-art semi-empirical Hamiltonian. These novel low-dimensional icosahedral structures exhibit interesting bonding and electronic properties. Specifically, the three-center, two-electron bonding between icosahedra B12 of the boron bulk (rhombohedral boron) transforms into a two-center bonding in these new allotropes of boron sheets. In contrast to the previously reported stable buckled α and triangular boron monolayer sheets, these new allotropes of boron sheets form a planar network. Calculations of electronic density of states (DOS) reveal a semiconducting nature for both the icosahedral chain and the icosahedral δ6 and δ4 sheets, as well as a nearly gapless (or metallic-like) feature in the DOS for the icosahedral α sheet. The results for the energy barrier per atom between the icosahedral δ6 and α sheets (0.17 eV), the icosahedral δ6 and δ4 sheets (0.38 eV), and the icosahedral α and δ4 sheets (0.27 eV), as indicated in the respective parentheses, suggest that these new allotropes of boron sheets are relatively stable.

Synthesis and photocurrent of amorphous boron nanowires

Although theoretically feasible, synthesis of boron nanostructures is challenging due to the highly reactive nature, high melting and boiling points of boron. We have developed a thermal vapor transfer approach to synthesizing amorphous boron nanowire using a solid boron source. The amorphous nature and chemical composition of boron nanowires were characterized by high resolution transmission electron microscopy, selected area electron diffraction, and electron energy loss spectroscopy. Optical properties and photoconduction of boron nanowires have not yet been reported. In our investigation, the amorphous boron nanowire showed much better optical and electrical properties than previously reported photo-response of crystalline boron nanobelts. When excited by a blue LED, the photo/dark current ratio (I/I₀) is 1.5 and time constants in the order of tens of seconds. I/I₀ is 1.17 using a green light.

Room temperature in situ growth of B/BOx nanowires and BOx nanotubes

Despite significant advances in the synthesis of nanostructures, our understanding of the growth mechanisms of nanowires and nanotubes grown from catalyst particles remains limited. In this study we demonstrate a straightforward route to grow coaxial amorphous B/BOx nanowires and BOx nanotubes using gold catalyst particles inside a transmission electron microscope at room temperature without the need of any specialized or expensive accessories. Exceedingly high growth rates (over 7 μm/min) are found for the coaxial nanowires, and this is attributed to the highly efficient diffusion of B species along the surface of a nanowire by electrostatic repulsion. On the other hand the O species are shown to be relevant to activate the gold catalysts, and this can occur through volatile O species. The technique could be further developed to study the growth of other nanostructures and holds promise for the room temperature growth of nanostructures as a whole.

One-dimensional boron nanostructures: Prediction, synthesis, characterizations, and applications

One-dimensional (1D) boron nanostructures are very potential for nanoscale electronic devices since their physical properties including electric transport and field emission have been found very promising as compared to other well-developed 1D nanomaterials. In this article, we review the current progress that has been made on 1D boron nanostructures in terms of theoretical prediction, synthetic techniques, characterizations and potential applications. To date, the synthesis of 1D boron nanostructures has been well-developed. The popular structures include nanowires, nanobelts, and nanocones. Some of these 1D nanostructures exhibited improved electric transport properties over bulk boron materials as well as promising field emission properties. By current experimental findings, 1D boron nanostructures are promising to be one of core materials for future nanodevices. More efforts are expected to be made in future on the controlled growth of 1D boron nanostructures and tailoring their physical properties.

Boron Nanotubes

A survey of novel classes of nanotubular materials based on boron is presented. Pure boron nanotubes are a consequence of a general Aufbau principle for boron clusters and solid boron phases, which postulates various novel boron materials besides the well-known bulk phases of boron based on boron icosahedra. Furthermore, several numerical studies suggest the existence of a large family of compound nanotubular materials derived from crystalline AlB2. We compare these novel boron-based nanotubular materials to standard nanotubular systems built from carbon, and point out a number of remarkable structural and electronic properties that make boron-based nanotubular materials an ideal component for composite nanodevices and extended nanotubular networks.

The planar-to-tubular structural transition in boron clusters from optical absorption

The optical response of the lowest-energy isomers of the B20 family is calculated using time-dependent density-functional theory within a real-space, real-time scheme. Significant differences are found among the absorption spectra of the clusters studied. We show that these differences can be easily related to changes in the overall geometry. Optical spectroscopy is thus an efficient tool to characterize the planar-to-tubular structural transition, known to be present in these boron-based systems.