New Ferroelectric Phase in Atomic-Thick Phosphorene Nanoribbons: Existence of in-Plane Electric Polarization

Direct Observations of Spontaneous In-Plane Electronic Polarization in 2D Te Films

Single-element polarization in low dimensions is fascinating for constructing next-generation nanoelectronics with multiple functionalities, yet remains difficult to access with satisfactory performance. Here, spectroscopic evidences are presented for the spontaneous electronic polarization in tellurium (Te) films thinned down to bilayer, characterized by low-temperature scanning tunneling microscopy/spectroscopy. The unique chiral structure and centrosymmetry-breaking character in 2D Te gives rise to sizable in-plane polarization with accumulated charges, which is demonstrated by the reversed band-bending trends at opposite polarization edges in spatially resolved spectra and conductance mappings. The polarity of charges exhibits intriguing influence on imaging the moiré superlattice at the Te-graphene interface. Moreover, the plain spontaneous polarization robustly exists for various film thicknesses, and can universally preserve against different epitaxial substrates. The experimental validations of considerable electronic polarization in Te multilayers thus provide a realistic platform for promisingly facilitating reliable applications in microelectronic devices.

Giant manipulation of thermal conductivity anisotropy in black phosphorene under external electric fields

The thermal anisotropy of materials holds significant theoretical and practical implications in the domains of thermal transport and thermoelectricity. Black phosphorene, a novel two-dimensional (2D) semiconductor, is notable for its exceptional chemical and physical properties, attracting substantial attention for its thermal transport characteristics. Similar to other 2D materials, black phosphorene exhibits pronounced in-plane thermal anisotropy. Given its expanding applications in nanoelectronics, optoelectronics, and thermoelectrics, there is a growing need to manipulate its anisotropic thermal transport. Current methods for adjusting anisotropy or isotropy typically involve structural engineering or materials processing, which are often costly, time-consuming, and irreversible. In contrast, little progress has been made with methods that are intact, robust, and reversible. Driven by the intrinsic relationship between interatomic interaction-mediated phonon transport and electronic charges, we conduct a comprehensive investigation into the impact of an external electric field on the thermal transport properties of 2D black phosphorene using first-principles calculations and the phonon Boltzmann transport equation. Our findings reveal that applying an electric field in the Zigzag direction reduces the lattice thermal conductivity of black phosphorene, with the Zigzag direction being more responsive to the electric field than the Armchair direction. By adjusting the electric field to a maximum of E(f_xx) = 0.2 V Å-1, the anisotropic thermal conductivity of black phosphorene decreases by more than 28%, demonstrating effective manipulation of anisotropy. This significant transition in anisotropic thermal transport arises from the substantial reduction in thermal conductivity along the Zigzag direction at moderate electric field strengths. The underlying cause of this variation in anisotropy can be attributed to changes in group velocity, with the phonon lifetime serving as a scaling factor for reducing anisotropy. Analysis of the electronic structures shows that stronger electric fields induce more charges, enhancing the screening effect. The electric field significantly alters thermal conductivity by affecting bond ionicity and anharmonicity. Our study introduces a robust approach for tuning the anisotropy of phonon transport in materials using an external electric field, without altering the atomic structure, thus offering considerable advantages for applications in nanoelectronics and thermoelectric energy conversion.

Independent Electrical Control of Spin and Valley Degrees in 2D Breathing Kagome Ta3I8 with Intrinsic Triferroicity

Independent electrical control of spin and valley degrees of freedom (DOFs) in 2D materials is difficult due to the coupling of spin and valley DOFs. Here we propose that spin-filter transport and valley polarization can be independently manipulated by an electric field in 2D breathing kagome Ta3I8 due to the possession of both triferroic (ferromagnetism, ferroelectric, and ferrovalley) and bipolar magnetic semiconducting characteristics. The spin-filter transport can be realized by applying a bias voltage without altering the semiconducting characteristic. The flip of valley polarization is fulfilled by switching the ferroelectric polarization with a gate voltage. Our results demonstrate the potential to control different DOFs independently by adjusting the direction of the electric field.

Seeded growth of single-crystal black phosphorus nanoribbons

Two-dimensional materials have emerged as an important research frontier for overcoming the challenges in nanoelectronics and for exploring new physics. Among them, black phosphorus, with a combination of a tunable bandgap and high mobility, is one of the most promising systems. In particular, black phosphorus nanoribbons show excellent electrostatic gate control, which can mitigate short-channel effects in nanoscale transistors. Controlled synthesis of black phosphorus nanoribbons, however, has remained an outstanding problem. Here we report large-area growth of black phosphorus nanoribbons directly on insulating substrates. We seed the chemical vapour transport growth with black phosphorus nanoparticles and obtain uniform, single-crystal nanoribbons oriented exclusively along the [100] crystal direction. With comprehensive structural calculations, we discover that self-passivation at the zigzag edges holds the key to the preferential one-dimensional growth. Field-effect transistors based on individual nanoribbons exhibit on/off ratios up to ~104, confirming the good semiconducting behaviour of the nanoribbons. These results demonstrate the potential of black phosphorus nanoribbons for nanoelectronic devices and also provide a platform for investigating the exotic physics in black phosphorus.

The Integration of Two-Dimensional Materials and Ferroelectrics for Device Applications

In recent years, there has been growing interest in functional devices based on two-dimensional (2D) materials, which possess exotic physical properties. With an ultrathin thickness, the optoelectrical and electrical properties of 2D materials can be effectively tuned by an external field, which has stimulated considerable scientific activities. Ferroelectric fields with a nonvolatile and electrically switchable feature have exhibited enormous potential in controlling the electronic and optoelectronic properties of 2D materials, leading to an extremely fertile area of research. Here, we review the 2D materials and relevant devices integrated with ferroelectricity. This review starts to introduce the background about the concerned themes, namely 2D materials and ferroelectrics, and then presents the fundamental mechanisms, tuning strategies, as well as recent progress of the ferroelectric effect on the optical and electrical properties of 2D materials. Subsequently, the latest developments of 2D material-based electronic and optoelectronic devices integrated with ferroelectricity are summarized. Finally, the future outlook and challenges of this exciting field are suggested.

Ferroic Phases in Two-Dimensional Materials

Two-dimensional (2D) ferroics, namely ferroelectric, ferromagnetic, and ferroelastic materials, are attracting rising interest due to their fascinating physical properties and promising functional applications. A variety of 2D ferroic phases, as well as 2D multiferroics and the novel 2D ferrovalleytronics/ferrotoroidics, have been recently predicted by theory, even down to the single atomic layers. Meanwhile, some of them have already been experimentally verified. In addition to the intrinsic 2D ferroics, appropriate stacking, doping, and defects can also artificially regulate the ferroic phases of 2D materials. Correspondingly, ferroic ordering in 2D materials exhibits enormous potential for future high density memory devices, energy conversion devices, and sensing devices, among other applications. In this paper, the recent research progresses on 2D ferroic phases are comprehensively reviewed, with emphasis on chemistry and structural origin of the ferroic properties. In addition, the promising applications of the 2D ferroics for information storage, optoelectronics, and sensing are also briefly discussed. Finally, we envisioned a few possible pathways for the future 2D ferroics research and development. This comprehensive overview on the 2D ferroic phases can provide an atlas for this field and facilitate further exploration of the intriguing new materials and physical phenomena, which will generate tremendous impact on future functional materials and devices.

Two-dimensional ferroelectricity in a single-element bismuth monolayer

Ferroelectric materials are fascinating for their non-volatile switchable electric polarizations induced by the spontaneous inversion-symmetry breaking. However, in all of the conventional ferroelectric compounds, at least two constituent ions are required to support the polarization switching1,2. Here, we report the observation of a single-element ferroelectric state in a black phosphorus-like bismuth layer3, in which the ordered charge transfer and the regular atom distortion between sublattices happen simultaneously. Instead of a homogenous orbital configuration that ordinarily occurs in elementary substances, we found the Bi atoms in a black phosphorous-like Bi monolayer maintain a weak and anisotropic sp orbital hybridization, giving rise to the inversion-symmetry-broken buckled structure accompanied with charge redistribution in the unit cell. As a result, the in-plane electric polarization emerges in the Bi monolayer. Using the in-plane electric field produced by scanning probe microscopy, ferroelectric switching is further visualized experimentally. Owing to the conjugative locking between the charge transfer and atom displacement, we also observe the anomalous electric potential profile at the 180° tail-to-tail domain wall induced by competition between the electronic structure and electric polarization. This emergent single-element ferroelectricity broadens the mechanism of ferroelectrics and may enrich the applications of ferroelectronics in the future.

Large Vertical Piezoelectricity in a Janus Cr2I3F3 Monolayer

Two-dimensional (2D) materials have potential applications in nanoscale sensors and spintronic devices. Herein, motivated by experimental synthesis of a CrI3 monolayer possessing intrinsic magnetism and a Janus MoSSe monolayer with piezoelectricity, we propose a 2D Janus Cr2I3F3 monolayer as a multifunctional material exhibiting both piezoelectricity and ferromagnetism. Using density functional theory calculations, we systematically investigated the structural stability and the electronic, magnetic, and piezoelectric properties of the Janus Cr2I3F3 monolayer. We predicted that a vertical polarization of up to −0.155 × 10−10 C/m is induced in the Cr2I3F3 monolayer due to the breaking of symmetry. The origination mechanism of polarization was demonstrated in terms of a local dipole moment calculated by maximally localized Wannier functions. Meanwhile, it was found that a remarkable piezoelectric response can be produced under a uniaxial strain in the basal plane. The calculated piezoelectric coefficients of the Cr2I3F3 monolayer compare favorably with those of the frequently used bulk piezoelectric materials such as α–quartz and wurtzite AlN. Particularly, the e31 and d31 values of the Cr2I3F3 monolayer are nearly 10 times as large as that of Mo-based transition metal dichalcogenides. We also found that the magnitude of e31 mainly arises from the ionic contribution, while the electronic contribution can be nearly neglected. The considerable piezoelectric response combined with the intrinsic magnetism make the Janus Cr2I3F3 monolayer a potential candidate for novel multifunctional devices integrating both piezoelectric and spintronic applications.

Room-Temperature Ferroelectricity in 1T^{'}-ReS_{2} Multilayers

van der Waals materials possess an innate layer degree of freedom and thus are excellent candidates for exploring emergent two-dimensional ferroelectricity induced by interlayer translation. However, despite being theoretically predicted, experimental realization of this type of ferroelectricity is scarce at the current stage. Here, we demonstrate robust sliding ferroelectricity in semiconducting 1T^{'}-ReS_{2} multilayers via a combined study of theory and experiment. Room-temperature vertical ferroelectricity is observed in two-dimensional 1T^{'}-ReS_{2} with layer number N≥2. The electric polarization stems from the uncompensated charge transfer between layers and can be switched by interlayer sliding. For bilayer 1T^{'}-ReS_{2}, the ferroelectric transition temperature is estimated to be ∼405  K from the second harmonic generation measurements. Our results highlight the importance of interlayer engineering in the realization of atomic-scale ferroelectricity.

Facile Production of Phosphorene Nanoribbons towards Application in Lithium Metal Battery

Like phosphorene, phosphorene nanoribbon (PNR) promises exotic properties but unzipping phosphorene into edge-defined PNR is non-trivial because of uncontrolled cutting of phosphorene along random directions. Here a facile electrochemical strategy to fabricate zigzag-edged PNRs in high yield (>80%) is reported. The presence of chemically active zigzag edges in PNR allows it to spontaneously react with Li to form a Li⁺ ion conducting Li₃ P phase, which can be used as a protective layer on Li metal anode in lithium metal batteries (LMBs). PNR protective layer prevents the parasitic reaction between lithium metal and electrolyte and promotes Li⁺ ion diffusion kinetics, enabling homogenous Li⁺ ion flux and long-time cycling stability up to 1100 h at a current density of 1 mA cm^-2 . LiFePO₄ |PNR-Li full-cell batteries with an areal capacity of 2 mAh cm^-2 , a lean electrolyte (20 µl mAh^-1 ) and a negative/positive (N/P) electrodes ratio of 3.5 can be stably cycled over 100 cycles.

Robust charge spatial separation and linearly tunable band gap of low-energy tube-edge phosphorene nanoribbon

Versatile applications have been proposed for phosphorene nanoribbons (PNRs), whose properties depend strongly on the edge structures. Recently, a unique tube-reconstruction at the zigzag edge (ZZ[Tube]) of PNRs was discovered to be the lowest configuration. Therefore, studies on PNRs should be reconsidered. In this paper, we systemically explore the width and strain effects on zigzag PNRs with different edge structures, including ZZ[Tube], ZZ and ZZ[ad] edges. ZZ PNRs always have small band gaps which are nearly independent of both width and strain. A remarkable band gap exists in ZZ[ad] PNRs which increases with a decrease in the ribbon width but is not sensitive to strain. In contrast, the band gaps of ZZ[Tube] PNRs change from 1.08 to 0.70 eV as the width increases from 12 to 65 Å. In addition, the band gaps of ZZ[Tube] PNRs show a linear response under a certain range of strain. In addition, the carrier effective masses (0.50 m 0 for electrons and 0.94 m 0 for holes) of ZZ[Tube] PNRs are much lower than for ZZ[ad], and the VBM and CBM charges are robustly spatially separated even under strains ranging from -5% to 5%. Their ease of formation, lowest energy, light effective mass, linear band gap response to strain and robust charge spatial separation provide ZZ[Tube] PNRs with potentially excellent performance in microelectronic and opto-electric applications.

Intercorrelated ferroelectrics in 2D van der Waals materials

2D intercorrelated ferroelectrics, exhibiting a coupled in-plane and out-of-plane ferroelectricity, is a fundamental phenomenon in the field of condensed-mater physics. The current research is based on the paradigm of bi-directional inversion asymmetry in single-layers, which restricts 2D intercorrelated ferroelectrics to extremely few systems. Herein, we propose a new scheme for achieving 2D intercorrelated ferroelectrics using van der Waals (vdW) interaction, and apply this scheme to a vast family of 2D vdW materials. Using first-principles, we demonstrate that 2D vdW multilayers, for example, BN, MoS₂, InSe, CdS, PtSe₂, TI₂O, SnS₂, Ti₂CO₂etc., can exhibit coupled in-plane and out-of-plane ferroelectricity, thus yielding 2D intercorrelated ferroelectric physics. We further predict that such intercorrelated ferroelectrics could demonstrate many distinct properties, for example, electrical full control of spin textures in trilayer PtSe₂ and electrical permanent control of valley-contrasting physics in four-layer VS₂. Our finding opens a new direction for 2D intercorrelated ferroelectric research.

Review on Recent Developments in 2D Ferroelectrics: Theories and Applications

Although only a few 2D materials have been predicted to possess ferroelectricity, 2D ferroelectrics are expected to play a dominant role in the upcoming nano era as important functional materials. The ferroelectric properties of 2D ferroelectrics are significantly different than those of traditional bulk ferroelectrics owing to their intrinsic size and surface effects. To date, 2D ferroelectrics have been reported to exhibit diverse properties ranging from bulk photovoltaic and piezoelectric/pyroelectric effects to the spontaneous valley and spin polarization. These properties are either dependent on ferroelectric polarization or coupled with it for easy electric control, thus making 2D ferroelectrics applicable to multifunctional nanodevices. At present, cumulative efforts are being made to explore 2D ferroelectrics in theories, experiments, and applications. Herein, such theories and methods are briefly introduced. Subsequently, intrinsic and extrinsic origins of 2D ferroelectricity are separately summarized. In addition, invented or laboratory-validated 2D ferroelectric-based applications are listed. Finally, the existing challenges and prospects of 2D ferroelectrics are discussed.

Band engineering of Dirac materials in SbmBin lateral heterostructures

Band engineering the electronic structures of Sb_mBi_n lateral heterostructures (LHS) from antimonene and bismuthene is systematically investigated using first principles calculations. The spin–orbit coupling is found to be crucial in determining electronic structures of Sb_mBi_n LHS. The results indicate that these lateral heterostructures have a type-II band alignment which can be easily tuned using their size and tensile strain. The band gap tends to zero when the lateral heterostructure size is larger than a critical value, which intrinsically corresponds to a semiconductor-to-semimetal transition. The band inversion near the Γ point occurs under suitable tensile strain, indicating that Sb_mBi_n LHS are very promising to realize quantum spin Hall effects.

Band engineering the electronic structures of Sb_mBi_n lateral heterostructures (LHS) from antimonene and bismuthene is systematically investigated using first principles calculations.

Two-Dimensional Black Phosphorus Nanomaterials: Emerging Advances in Electrochemical Energy Storage Science

Two-dimensional black phosphorus (2D BP), well known as phosphorene, has triggered tremendous attention since the first discovery in 2014. The unique puckered monolayer structure endows 2D BP intriguing properties, which facilitate its potential applications in various fields, such as catalyst, energy storage, sensor, etc. Owing to the large surface area, good electric conductivity, and high theoretical specific capacity, 2D BP has been widely studied as electrode materials and significantly enhanced the performance of energy storage devices. With the rapid development of energy storage devices based on 2D BP, a timely review on this topic is in demand to further extend the application of 2D BP in energy storage. In this review, recent advances in experimental and theoretical development of 2D BP are presented along with its structures, properties, and synthetic methods. Particularly, their emerging applications in electrochemical energy storage, including Li-/K-/Mg-/Na-ion, Li-S batteries, and supercapacitors, are systematically summarized with milestones as well as the challenges. Benefited from the fast-growing dynamic investigation of 2D BP, some possible improvements and constructive perspectives are provided to guide the design of 2D BP-based energy storage devices with high performance.

Reversible Pressure-Induced Partial Phase Transition in Few-Layer Black Phosphorus

The experimental identification of structural transitions in layered black phosphorus (BP) under mechanical stress is essential to extend its application in microelectromechanical (MEMS) devices under harsh conditions. High-pressure Raman spectroscopic analysis of BP flakes suggests a transition pressure at ∼4.2 GPa, where the BP's crystal structure progressively transforms from an orthorhombic to a rhombohedral symmetry (blue phosphorus, bP). The phase transition has been identified by observing a transition from blueshift to redshift of the in-plane characteristic Raman modes (B_2g and A_g²) with increasing pressure. Recovery of the vibrational frequencies for all three characteristic Raman modes confirms the reversibility of the structural phase transition. First-principles calculations provide insight into the behavior of the Raman modes of BP under high pressure and reveal the mechanism responsible for the partial phase transition from BP to bP, corresponding to a metastable equilibrium state where both phases coexist.

Electrical Control of Magnetic Phase Transition in a Type-I Multiferroic Double-Metal Trihalide Monolayer

Controlling magnetism of two-dimensional multiferroics by an external electric field provides special opportunities for both fundamental research and future development of low-cost electronic nanodevices. Here, we report a general scheme for realizing a magnetic phase transition in 2D type-I multiferroic systems through the reversal of ferroelectric polarization. Based on first-principles calculations, we demonstrate that a single-phase 2D multiferroic, namely, ReWCl_{6} monolayer, exhibits two different low-symmetric (C_{2}) phases with opposite in-plane electric polarization and different magnetic order. As a result, an antiferromagnetic-to-ferromagnetic phase transition can be realized by reversing the in-plane electric polarization through the application of an external electric field. These findings not only enrich the 2D multiferroic family, but also uncover a unique and general mechanism to control magnetism by electric field, thus stimulating experimental interest.

Unconventional inner-TL electric polarization in TL-LaOBiS2 with ultrahigh carrier mobility

Based on first principles calculations, we propose a new 2D ferroelectric material, triple-layer (TL) LaOBiS2, with an ultrahigh carrier mobility over 40 000 cm2 V-1 s-1 and large sunlight absorption. TL-LaOBiS2 is composed of a middle LaO layer and top-and-bottom BiS2 layers that can be possibly exfoliated from its bulk counterpart. We reveal that each BiS2 layer can hold spontaneous in-plane ferroelectric polarization that can be further enhanced by imposing extensive strain. Furthermore, we discover that TL-LaOBiS2 possesses unconventional inner-TL ferroelectric (FE), antiferroelectric (AFE) and orthogonal polarizations. The ground inner-TL AFE state can be flexibly driven into a nearly degenerate FE state. Moreover, the direct band gaps, optical absorption and the carrier mobilities of TL-LaOBiS2 can be effectively regulated by different ferroelectric polarization configurations. This finding of various ferroelectric states with ultrahigh mobility and excellent optical absorption in TL-LaOBiS2 provides a promising platform for future realization of two-dimensional ferroelectric photovoltaic devices.

Controlled nanofabrication of metal-free SERS substrate on few layered black phosphorus by low power focused laser irradiation

Black Phosphorous (BP) has intrinsic in-plane ferroelectric properties that may have the inherent capability of SERS response and can be considered as a replacement of metal nanoparticle-based SERS substrates. A simple one-step process has been demonstrated for the controlled nano-structuring and rapid prototyping on a BP flake to develop a metal-free SERS substrate by low power focused laser irradiation. The effect of focused laser irradiation on the surface morphology of the pristine BP flakes has been thoroughly investigated by real time Raman spectroscopy measurements and corresponding AFM height profiling, which confirms that the proposed laser irradiation technique has more advantages over the conventional lithography and is free from undesired contamination. For a 532 nm laser line, the minimum laser power needed to create a nano-void on the BP flake is 25 mW (Power density = ∼15.62 × 10⁵ W cm^-2) with 5 s exposure time, where the etching rate is controlled by the laser power and exposure time. By analyzing the geometrical shape of the nano-void created due to laser irradiation, it is possible to identify the armchair and zigzag directions of the BP flake. The experimental results revealed that by controlling the exposure time and laser power, it was possible to perform layer by layer thinning of BP flakes. The proposed thinning process of the BP flake did not alter the pristine quality and no signature of oxidation was found in the Raman spectra, which signified the reliability of this low power laser irradiation technique towards the future nano-fabrication of BP-based devices. The controlled formation of the nano-void array on a few layered BP flake enhanced the local electric field (hot spots) in the vicinity of the nano-voids, resulting in ∼30% Raman intensity enhancement. Such nano-void induced hotspots on the BP flake open up a new species of metal-free SERS substrate, demonstrating pronounced enhancement in the Raman signal of Rhodamine B as high as ∼10⁶ and a limit of detection (LOD) up to ∼10 nM.

Intrinsic interaction between in-plane ferroelectric polarization and surface adsorption

The chemical properties of a ferroelectric surface are polarization dependent, the underlying nature of which is, however, far from being completely understood. One of the reasons is that when the polarization direction is perpendicular to the surface, the depolarization field may induce electronic or atomic reconstruction and thus change the chemistry of the ferroelectric surface in complicated ways. Instead, the in-plane polarization results in no depolarization field. Therefore, the chemical properties of a ferroelectric surface can be more intrinsically reflected by the interplay between the in-plane polarization and the surface adsorption. By using first-principles calculations, we study the effect of the strain-induced in-plane polarization on the adsorption of a series of molecules on the reduced rutile TiO2(110) surface. We reveal that it is the surface doping caused by the charge transfer between the adsorbates and the TiO2(110) surface that dominates the polarization-induced change of the adsorption energy, as a result of screening long-range Coulomb interactions. The electrostatic interaction between the polarization of the substrate and the polar molecule is of relatively less importance. We propose that charge transfer effects generally occur for ferroelectric surfaces with no localized surface states.

Tuning electronic structure of monolayer InP3 in contact with graphene or Ni: effect of a buffer layer and intrinsic In and P-vacancy

Ohmic contact in m-InP₃ and G or Ni interface is achieved by introducing intrinsic defects and inserting a buffer layer.

Room-temperature pyro-catalytic hydrogen generation of 2D few-layer black phosphorene under cold-hot alternation

Many 2D few-layer materials show piezoelectric or pyroelectric effects due to the loss-of-inversion symmetry induced by broken structure, although they are not piezoelectric or pyroelectric in the bulk. In this work, we find that the puckered graphene-like 2D few-layer black phosphorene is pyroelectric and shows a pyro-catalytic effect, where the pyroelectric charges generated under ambient cold-hot alternation are utilized for hydrogen evolution and dye molecule decomposition. Under thermal cycling between 15 °C and 65 °C, the 2D few-layer black phosphorene shows a direct hydrogen generation of about 540 μmol per gram of catalyst after 24 thermal cycles and about 99% decomposition of Rhodamine B dye after 5 thermal cycles. This work opens a door for the pyro-catalytic energy harvesting from the cold-hot alternations by a class of 2D few-layer materials.

Room temperature in-plane ferroelectricity in van der Waals In2Se3

Van der Waals (vdW) assembly of layered materials is a promising paradigm for creating electronic and optoelectronic devices with novel properties. Ferroelectricity in vdW layered materials could enable nonvolatile memory and low-power electronic and optoelectronic switches, but to date, few vdW ferroelectrics have been reported, and few in-plane vdW ferroelectrics are known. We report the discovery of in-plane ferroelectricity in a widely investigated vdW layered material, β'-In₂Se₃. The in-plane ferroelectricity is strongly tied to the formation of one-dimensional superstructures aligning along one of the threefold rotational symmetric directions of the hexagonal lattice in the c plane. Surprisingly, the superstructures and ferroelectricity are stable to 200°C in both bulk and thin exfoliated layers of In₂Se₃. Because of the in-plane nature of ferroelectricity, the domains exhibit a strong linear dichroism, enabling novel polarization-dependent optical properties.

Prediction of Intrinsic Ferromagnetic Ferroelectricity in a Transition-Metal Halide Monolayer

The realization of multiferroics in nanostructures, combined with a large electric dipole and ferromagnetic ordering, could lead to new applications, such as high-density multistate data storage. Although multiferroics have been broadly studied for decades, ferromagnetic ferroelectricity is rarely explored, especially in two-dimensional (2D) systems. Here we report the discovery of 2D ferromagnetic ferroelectricity in layered transition-metal halide systems. On the basis of first-principles calculations, we reveal that a charged CrBr_{3} monolayer exhibits in-plane multiferroicity, which is ensured by the combination of orbital and charge ordering as realized by the asymmetric Jahn-Teller distortions of octahedral Cr─Br_{6} units. As an example, we further show that (CrBr_{3})_{2}Li is a ferromagnetic ferroelectric multiferroic. The explored phenomena and mechanism of multiferroics in this 2D system not only are useful for fundamental research in multiferroics but also enable a wide range of applications in nanodevices.

Nonlinear modeling of crystal system transition of black phosphorus using continuum-DFT model

In this paper, the nonlinear behavior of black phosphorus crystals is investigated in tandem with dispersion-corrected density functional theory (DFT-D) analysis under uniaxial loadings. From the identified anisotropic behavior of black phosphorus due to its morphological anisotropy, a hyperelastic anisotropic (HA) model named continuum-DFT is established to predict the nonlinear behavior of the material. In this respect, uniaxial Cauchy stresses are employed on both the DFT-D and HA models along the zig-zag and armchair directions. Simultaneously, the transition of the crystal system is recognized at about 4.5 GPa of the applied uniaxial tensile stress along the zig-zag direction on the DFT-D simulation in the nonlinear region. In order to develop the nonlinear continuum model, unknown constants are surveyed with the optimized least square technique. In this regard, the continuum model is obtained to reproduce the Cauchy stress-stretch and density of strain-stretch results of the DFT-D simulation. Consequently, the modified HA model is introduced to characterize the nonlinear behavior of black phosphorus along the zig-zag direction. More importantly, the specific transition of the crystal system is successfully predicted in the new modified continuum-DFT model. The results reveal that the multiscale continuum-DFT model is well defined to replicate the nonlinear behavior of black phosphorus along the zig-zag and armchair directions.

Bismuth Oxychalcogenides: A New Class of Ferroelectric/Ferroelastic Materials with Ultra High Mobility

Atomically thin Bi₂O₂Se has been recently synthesized, and it possesses ultrahigh mobility (Nat. Nanotechnol. 2017, 12, 530; Nano Lett. 2017, 17, 3021). Herein, we show first-principles evidence that Bi₂O₂Se and a related class of bismuth oxychalcogenides, such as Bi₂O₂S and Bi₂O₂Te, not only are novel semiconductors with ultrahigh mobility but also possess previously unreported ferroelectricity/ferroelasticity. Such a unique combination of semiconducting with ferroelectric/ferroelastic properties enables bismuth oxychalcogenides to potentially meet a great challenge, that is, integration of room-temperature functional nonvolatile memories into future nanocircuits. Specifically, we predict that bulk Bi₂O₂S is both ferroelastic and antiferroelectric and that a thin film with odd number of layers can even be multiferroic with nonzero in-plane polarization, and this polarization can be switchable via ferroelasticity. Moreover, Bi₂O₂Te possesses intrinsic out-of-plane ferroelectricity, while Bi₂O₂Se possesses piezoelectricity and ferroelectricity upon an in-plane strain. The in-plane strain on Bi₂O₂Se can induce giant polarizations (56.1 μC/cm² upon 4.1% strain) with the piezoelectric coefficient being about 35 times higher than that of MoS₂ monolayer. The in-plane strain can also enhance the bandgap or even convert indirect to direct bandgap beyond a critical value. The good match among the lattice constants of bismuth oxychalcogenides is also desirable, rendering the epitaxial growth of heterostructure devices free of fabrication issues related to lattice mismatch, thereby allowing high-quality bismuth oxychalcogenide heterostructures tailored by design for a variety of applications.

Quantum confinement in black phosphorus-based nanostructures

The modification of an idealized infinite bulk system by dimensional reduction or structural distortion results in quantum confinement effects (QCEs). For example, dimensional reduction of a black phosphorus structure leads to the realization of few-layer systems, creation of edges and surfaces, nanoribbons, quantum dots, and antidot lattices while structural distortion involves simple bending (including nanotubes) and rippling. Black phosphorus ('phosphorene' in the single-layer limit) has been of recent interest due to its relatively large charge carrier mobility and moderate semiconducting band gap, which remains direct irrespective of the number of layers. In this review the state-of-the-art properties of black phosphorus in its dimensionally reduced and structurally distorted forms are discussed, with emphasis on how quantum confinement impacts the material's properties.

Vastly enhancing the chemical stability of phosphorene by employing an electric field

Currently, a major hurdle preventing phosphorene from various electronic applications is its rapid oxidation under ambient conditions. Thus how to enhance its chemical stability by suppressing oxidation becomes an urgent task. Here, we reveal a highly effective procedure to suppress the oxidation of phosphorene by employing a suitable van der Waals (vdW) substrate and a vertical electric field. Our first-principles study shows that the phosphorene-MoSe₂ vdW heterostructure is able to reverse the stability of physisorption and chemisorption of molecular O₂ on phosphorene. With further application of a vertical electric field of -0.6 V Å^-1, the energy barrier for oxidation is able to further increase to 0.91 eV, leading to a 10⁵ times enhancement in its lifetime compared with that without using the procedure at room temperature. Our work presents a viable strategy to vastly enhance the chemical stability of phosphorene in air.