Dynamic Phase Engineering of Bendable Transition Metal Dichalcogenide Monolayers

Recent Strategies for the Synthesis of Phase-Pure Ultrathin 1T/1T' Transition Metal Dichalcogenide Nanosheets

The past few decades have witnessed a notable increase in transition metal dichalcogenide (TMD) related research not only because of the large family of TMD candidates but also because of the various polytypes that arise from the monolayer configuration and layer stacking order. The peculiar physicochemical properties of TMD nanosheets enable an enormous range of applications from fundamental science to industrial technologies based on the preparation of high-quality TMDs. For polymorphic TMDs, the 1T/1T' phase is particularly intriguing because of the enriched density of states, and thus facilitates fruitful chemistry. Herein, we comprehensively discuss the most recent strategies for direct synthesis of phase-pure 1T/1T' TMD nanosheets such as mechanical exfoliation, chemical vapor deposition, wet chemical synthesis, atomic layer deposition, and more. We also review frequently adopted methods for phase engineering in TMD nanosheets ranging from chemical doping and alloying, to charge injection, and irradiation with optical or charged particle beams. Prior to the synthesis methods, we discuss the configuration of TMDs as well as the characterization tools mostly used in experiments. Finally, we discuss the current challenges and opportunities as well as emphasize the promising fields for the future development.

Strain-Induced 2H to 1T' Phase Transition in Suspended MoTe2 Using Electric Double Layer Gating

MoTe2 can be converted from the semiconducting (2H) phase to the semimetallic (1T') phase by several stimuli including heat, electrochemical doping, and strain. This type of phase transition, if reversible and gate-controlled, could be useful for low-power memory and logic. In this work, a gate-controlled and fully reversible 2H to 1T' phase transition is demonstrated via strain in few-layer suspended MoTe2 field effect transistors. Strain is applied by the electric double layer gating of a suspended channel using a single ion conducting solid polymer electrolyte. The phase transition is confirmed by simultaneous electrical transport and Raman spectroscopy. The out-of-plane vibration peak (A1g)─a signature of the 1T' phase─is observed when VSG ≥ 2.5 V. Further, a redshift in the in-plane vibration mode (E2g) is detected, which is a characteristic of a strain-induced phonon shift. Based on the magnitude of the shift, strain is estimated to be 0.2-0.3% by density functional theory. Electrically, the temperature coefficient of resistance transitions from negative to positive at VSG ≥ 2 V, confirming the transition from semiconducting to metallic. The approach to gate-controlled, reversible straining presented here can be extended to strain other two-dimensional materials, explore fundamental material properties, and introduce electronic device functionalities.

Classification and Simulation of Structural Phase Transformation-Induced Interfacial Defects in Group VI Transition-Metal Dichalcogenide Monolayers

Polymorphic 2D materials have recently emerged as promising candidates for use in nanoelectronic devices by way of their ability to undergo structural phase transformations induced by external fields. Under cyclic transformations, however, induced interfacial defects may proliferate and compromise the system properties. Herein, we first employ geometric analysis to classify such defects generated during the 2H ↔ 1T and 2H ↔ 1T' transformations in group VI transition-metal dichalcogenide monolayers. Then, simulations of a mesoscale model with atomistic spatial resolution are conducted to assess the proliferation of such defects during cyclic 2H ↔ 1T transformations. It is shown that defect densities reach a steady state, with the 2H phase remaining more pristine than the 1T and 1T' states. We expect that the effects of these defects on the device performance are application-dependent and will require further inquiry.

Applications of Transmission Electron Microscopy in Phase Engineering of Nanomaterials

Phase engineering of nanomaterials (PEN) is an emerging field that aims to tailor the physicochemical properties of nanomaterials by precisely manipulating their crystal phases. To advance PEN effectively, it is vital to possess the capability of characterizing the structures and compositions of nanomaterials with precision. Transmission electron microscopy (TEM) is a versatile tool that combines reciprocal-space diffraction, real-space imaging, and spectroscopic techniques, allowing for comprehensive characterization with exceptional resolution in the domains of time, space, momentum, and, increasingly, even energy. In this Review, we first introduce the fundamental mechanisms behind various TEM-related techniques, along with their respective application scopes and limitations. Subsequently, we review notable applications of TEM in PEN research, including applications in fields such as metallic nanostructures, carbon allotropes, low-dimensional materials, and nanoporous materials. Specifically, we underscore its efficacy in phase identification, composition and chemical state analysis, in situ observations of phase evolution, as well as the challenges encountered when dealing with beam-sensitive materials. Furthermore, we discuss the potential generation of artifacts during TEM imaging, particularly in scanning modes, and propose methods to minimize their occurrence. Finally, we offer our insights into the present state and future trends of this field, discussing emerging technologies including four-dimensional scanning TEM, three-dimensional atomic-resolution imaging, and electron microscopy automation while highlighting the significance and feasibility of these advancements.

First principles studies on the electronic and contact properties of single layer 2H-MoS2/1T'-MX2 heterojunctions

Constructed via in-plane heterojunction contacts between the semiconducting 2H phase (as the channel) and the metallic 1T' phase (as the electrode), two-dimensional (2D) transition metal dichalcogenide (TMD) field-effect transistors (FETs) have received much recent attention because they significantly reduce contact resistance. In this paper, ab initio quantum transport simulation is done to study and predict the electronic states and contact properties of the 2H-MoS₂/1T'-MX₂ (WS₂, TaSe₂, NbSe₂, MoSe₂, TaS₂, and NbS₂) in-plane heterojunctions. It is found that the interfacial states are not obvious and the fluctuation of the average electron density at the 1T'/2H phase boundary is small for all 2H-MoS₂/1T'-MX₂ heterojunctions. The average electrostatic potential differences (ΔV) are all negative, which is beneficial to promote the charge transfer from 1T'-MX₂ to 2H-MoS₂. Moreover, the p-type Schottky contact of the 2H-MoS₂/1T'-MX₂ heterojunctions is formed and the Φ_SB,P values are 0.609 eV, 0.625 eV, 0.641 eV, 0.617 eV, 0.469 eV and 0.477 eV for 1T'-WS₂, 1T'-TaSe₂, 1T'-NbSe₂, 1T'-MoSe₂, 1T'-TaS₂, and 1T'-NbS₂, respectively. The results provide theoretical guidance for designing two-dimensional material devices.

Flexoelectric and Piezoelectric Coupling in a Bended MoS2 Monolayer

Low-dimensional (LD) transition metal dichalcogenides (TMDs) in the form of nanoflakes, which consist of one or several layers, are the subject of intensive fundamental and applied research. The tuning of the electronic properties of the LD-TMDs are commonly related with applied strains and strain gradients, which can strongly affect their polar properties via piezoelectric and flexoelectric couplings. Using the density functional theory and phenomenological Landau approach, we studied the bended 2H-MoS2 monolayer and analyzed its flexoelectric and piezoelectric properties. The dependences of the dipole moment, strain, and strain gradient on the coordinate along the layer were calculated. From these dependences, the components of the flexoelectric and piezoelectric tensors have been determined and analyzed. Our results revealed that the contribution of the flexoelectric effect dominates over the piezoelectric effect in both in-plane and out-of-plane directions of the monolayer. In accordance with our calculations, a realistic strain gradient of about 1 nm−1 can induce an order of magnitude higher than the flexoelectric response in comparison with the piezoelectric reaction. The value of the dilatational flexoelectric coefficient is almost two times smaller than the shear component. It appeared that the components of effective flexoelectric and piezoelectric couplings can be described by parabolic dependences of the corrugation. Obtained results are useful for applications of LD-TMDs in strain engineering and flexible electronics.

Defect-Enabled Phase Programming of Transition Metal Dichalcogenide Monolayers

The ability to tune the local electronic transport properties of group VI transition metal dichalcogenide (TMD) monolayers by strain-induced structural phase transformations ("phase programming") has stimulated much interest in the potential applications of such layers as ultrathin programmable and dynamically switchable nanoelectronics components. In this manuscript, we propose a new approach toward controlling TMD monolayer phases by employing macroscopic in-plane strains to amplify heterogeneous strains arising from tailored, spatially extended defects within the monolayer. The efficacy of our proposed approach is demonstrated via numerical simulations of emerging domains localized around arrays of holes, grain boundaries, and compositional heterointerfaces. Quantitative relations between the macroscopic strains required, spatial resolution of domain patterns, and defect configurations are developed. In particular, the introduction of arrays of holes is identified as the most feasible phase programming route.

Recent progress of TMD nanomaterials: phase transitions and applications

Transition metal dichalcogenides (TMDs) show wide ranges of electronic properties ranging from semiconducting, semi-metallic to metallic due to their remarkable structural differences. To obtain 2D TMDs with specific properties, it is extremely important to develop particular strategies to obtain specific phase structures. Phase engineering is a traditional method to achieve transformation from one phase to another controllably. Control of such transformations enables the control of properties and access to a range of properties, otherwise inaccessible. Then extraordinary structural, electronic and optical properties lead to a broad range of potential applications. In this review, we introduce the various electronic properties of 2D TMDs and their polymorphs, and strategies and mechanisms for phase transitions, and phase transition kinetics. Moreover, the potential applications of 2D TMDs in energy storage and conversion, including electro/photocatalysts, batteries/supercapacitors and electronic devices, are also discussed. Finally, opportunities and challenges are highlighted. This review may further promote the development of TMD phase engineering and shed light on other two-dimensional materials of fundamental interest and with potential ranges of applications.

Strain Relaxation in Misfitting Transition Metal Dichalcogenide Monolayer Superlattices: Wrinkling vs Misfit Dislocation Formation

Two-dimensional (2D) superlattices composed of chemically heterogeneous transition-metal dichalcogenides (TMDs) have been proposed as key components in next-generation optoelectronic devices. For potential applications, coherent, defect-free compositional interfaces are usually required. In this paper, a combination of scaling theory and numerical analysis is employed to investigate strain relaxation mechanisms in misfitting, chemically heterogeneous TMDs. We demonstrate that, in free-standing superlattices, wrinkling of the monolayer is asymptotically preferred over misfit dislocation formation in both binary and ternary superlattices. For substrate-supported monolayers, however, misfit dislocation formation is thermodynamically favored above a critical superlattice width, implying the presence of an upper limit to the thermodynamic stability of coherent, misfitting 2D superlattices. Finally, it is shown numerically that the critical superlattice width is only weakly dependent on the misfit.

The MoSeS dynamic omnigami paradigm for smart shape and composition programmable 2D materials

The properties of 2D materials can be broadly tuned through alloying and phase and strain engineering. Shape programmable materials offer tremendous functionality, but sub-micron objects are typically unachievable with conventional thin films. Here we propose a new approach, combining phase/strain engineering with shape programming, to form 3D objects by patterned alloying of 2D transition metal dichalcogenide (TMD) monolayers. Conjugately, monolayers can be compositionally patterned using non-flat substrates. For concreteness, we focus on the TMD alloy MoSe[Formula: see text]S[Formula: see text]; i.e., MoSeS. These 2D materials down-scale shape/composition programming to nanoscale objects/patterns, provide control of both bending and stretching deformations, are reversibly actuatable with electric fields, and possess the extraordinary and diverse properties of TMDs. Utilizing a first principles-informed continuum model, we demonstrate how a variety of shapes/composition patterns can be programmed and reversibly modulated across length scales. The vast space of possible designs and scales enables novel material properties and thus new applications spanning flexible electronics/optics, catalysis, responsive coatings, and soft robotics.

Photoinduced Vacancy Ordering and Phase Transition in MoTe2

We show that non-equilibrium dynamics plays a central role in the photoinduced 2H-to-1T' phase transition of MoTe₂. The phase transition is initiated by a local ordering of Te vacancies, followed by a 1T' structural change in the original 2H lattice. The local 1T' region serves as a seed to gather more vacancies into ordering and subsequently induces a further growth of the 1T' phase. Remarkably, this process is controlled by photogenerated excited carriers as they enhance vacancy diffusion, increase the speed of vacancy ordering, and are hence vital to the 1T' phase transition. This mechanism can be contrasted to the current model requiring a collective sliding of a whole Te atomic layer, which is thermodynamically highly unlikely. By uncovering the key roles of photoexcitations, our results may have important implications for finely controlling phase transitions in transition metal dichalcogenides.

An electrically driven structural phase transition in single Ag2Te nanowire devices

Exploring new phase-change materials is instrumental in the progression of electronic memory devices. Ag2Te with its reversible structural phase transition, and in the form of nanowires, has become an apt candidate for potential use in nanoscale memory devices. Here, we report a study on the temperature- or electrically-driven phase change properties of crystalline Ag2Te nanowires. We first demonstrate that this structural phase change can be achieved via heating up the nanowires, which results in a sharp drop in conductance. Then we show that a DC voltage (<1 V) induced Joule heating can be used to reach the phase transition, even without any external heating. This work shows the potential of using Ag2Te nanowires as a phase-change material in low voltage and low power nanoscale devices.

Probing the Optical Properties and Strain-Tuning of Ultrathin Mo1- xW xTe2

Ultrathin transition metal dichalcogenides (TMDCs) have recently been extensively investigated to understand their electronic and optical properties. Here we study ultrathin Mo0.91W0.09Te2, a semiconducting alloy of MoTe2, using Raman, photoluminescence (PL), and optical absorption spectroscopy. Mo0.91W0.09Te2 transitions from an indirect to a direct optical band gap in the limit of monolayer thickness, exhibiting an optical gap of 1.10 eV, very close to its MoTe2 counterpart. We apply tensile strain, for the first time, to monolayer MoTe2 and Mo0.91W0.09Te2 to tune the band structure of these materials; we observe that their optical band gaps decrease by 70 meV at 2.3% uniaxial strain. The spectral widths of the PL peaks decrease with increasing strain, which we attribute to weaker exciton-phonon intervalley scattering. Strained MoTe2 and Mo0.91W0.09Te2 extend the range of band gaps of TMDC monolayers further into the near-infrared, an important attribute for potential applications in optoelectronics.

Synthesis and Physical Properties of Phase-Engineered Transition Metal Dichalcogenide Monolayer Heterostructures

Heterostructures of transition metal dichalcogenides (TMDs) offer the attractive prospect of combining distinct physical properties derived from different TMD structures. Here, we report direct chemical vapor deposition of in-plane monolayer heterostructures based on 1H-MoS₂ and 1T'-MoTe₂. The large lattice mismatch between these materials led to intriguing phenomena at their interface. Atomic force microscopy indicated buckling in the 1H region. Tip-enhanced Raman spectroscopy showed mode structure consistent with Te substitution in the 1H region during 1T'-MoTe₂ growth. This was confirmed by atomic resolution transmission electron microscopy, which also revealed an atomically stitched, dislocation-free 1H/1T' interface. Theoretical modeling revealed that both the buckling and absence of interfacial misfit dislocations were explained by lateral gradients in Te substitution levels within the 1H region and elastic coupling between 1H and 1T' domains. Phase field simulations predicted 1T' morphologies with spike-shaped islands at specific orientations consistent with experiments. Electrical measurements across the heterostructure confirmed its electrical continuity. This work demonstrates the feasibility of dislocation-free stitching of two different atomic configurations and a pathway toward direct synthesis of monolayer TMD heterostructures of different phases.

Charging assisted structural phase transitions in monolayer InSe

Two new phases of InSe with novel electronic properties have been identified by first-principles calculations; charge doping and substrates are suggested as feasible methods to stabilize these structures.