Three-Dimensional Graphene Field-Effect Transistors as High-Performance Photodetectors

Nanoresonance Cavity and Localized Surface Plasmon Resonance Enhanced Broad-Spectral Photodetector for Versatile Applications

To overcome the limitations inherent in traditional silicon (Si)-based photodetectors, particularly the low light absorption and complex carrier dynamics, this study proposes and fabricates in situ three-dimensional (3D) graphene/Si Schottky junctions integrated with WS2 quantum dots (QDs). The introduction of WS2 QDs enables the heterojunction to realize "double-enhanced absorption" by the synergistic effect of the natural nanoresonant cavity effect and the surface plasmon resonance effect (LSPR) of the WS2 QDs. Photodetectors constructed from the WS2 QDs/3D-graphene/Si heterojunction demonstrate a broadband, self-powered response from 440 to 1850 nm, maintaining stable operation at 1550 nm for 4 months. They exhibit high-frequency modulation (2 kHz), a responsivity of up to 83 A/W, a specific detectivity of 5.6 × 1011 Jones, rapid response/recovery times of 139 μs/145 μs with multifunctionality in image acquisition, information encryption, and logic operations. This research lays the foundation for high-performance, stable photodetectors and light-controlled logic circuits in communications and imaging.

High-Performance Room-Temperature Terahertz Photodetection Using 2-Dimensional Electron Gas Channel Transport

Room-temperature (RT) terahertz (THz) detection finds widespread applications in security inspection, communication, biomedical imaging, and scientific research. However, the state-of-the-art detection strategies are still limited by issues such as low sensitivity, narrow response range, slow response speed, complex fabrication techniques, and difficulties in scaling up to large arrays. Here, we present a high-sensitivity, broadband-response, and high-speed RT THz detection strategy by utilizing a deep subwavelength metal-semiconductor-metal (MSM) structure. The spontaneously formed 2-dimensional electron gas (2DEG) at the CdTe/PbTe interface provides a superior transport channel characterized by high carrier concentration, low scattering, and high mobility. The synergy of the electromagnetic induced well effect formed in the MSM structure, and the efficient and rapid transport capabilities of the 2DEG channel give rise to an impressive performance improvement. The proposed 2DEG photodetector exhibits a broad frequency range from 22 to 519 GHz, an ultralow noise equivalent power of 3.0 × 10-14 W Hz-1/2 at 166 GHz, and a short response time of 6.7 μs. This work provides an effective route for the development of high-performance RT THz detection strategies, paving the way for enhanced THz technology applications.

Te2-Regulated Black Arsenic Phosphorus Monocrystalline Film with Excellent Uniformity for High Performance Photodetection

Two-dimensional (2D) black arsenic phosphorus (b-AsP) material has been attracting considerable attention for its extraordinary properties. However, its application in large-scale device fabrication remains challenging due to the limited scale and irregular shape. Here, we found the special effect of Te2 upon growth of b-AsP and developed a novel Te2-regulated steady growth (Te-SG) strategy to obtain high-quality b-AsP single crystal. The large-scale b-AsP single crystal sheet with its full width at half-maximum (FWHM) being ≤0.05° was achieved for the first time. The b-AsP monocrystalline film with atomic-level flat surface was further fabricated by laser, which exhibits outstanding self-powered characteristics under various light illumination, including low dark current and peak room-temperature detectivity of 8.5 × 1010 cm Hz1/2 W-1. The excellent uniformity was also revealed through a large-plane b-AsP photodetector. This work paves a new way for the application of high-performance electronics and optoelectronics based on b-AsP.

Two-Dimensional Organic-Inorganic van der Waals Hybrids

Two-dimensional organic-inorganic (2DOI) van der Waals hybrids (vdWhs) have emerged as a groundbreaking subclass of layer-stacked (opto-)electronic materials. The development of 2DOI-vdWhs via systematically integrating inorganic 2D layers with organic 2D crystals at the molecular/atomic scale extends the capabilities of traditional 2D inorganic vdWhs, thanks to their high synthetic flexibility and structural tunability. Constructing an organic-inorganic hybrid interface with atomic precision will unlock new opportunities for generating unique interfacial (opto-)electronic transport properties by combining the strengths of organic and inorganic layers, thus allowing us to satisfy the growing demand for multifunctional applications. Here, this review provides a comprehensive overview of the latest advancements in the chemical synthesis, structural characterization, and numerous applications of 2DOI-vdWhs. Firstly, we introduce the chemistry and the physical properties of the recently rising organic 2D crystals (O2DCs), which feature crystalline 2D nanostructures comprising carbon-rich repeated units linked by covalent/noncovalent bonds and exhibit strong in-plane extended π-conjugation and weak interlayer vdWs interaction. Simultaneously, representative inorganic 2D crystals (I2DCs) are briefly summarized. After that, the synthetic strategies will be systematically summarized, including synthesizing single-component O2DCs with dimensional control and their vdWhs with I2DCs. With these synthetic approaches, the control in the dimension, the stacking modes, and the composition of the 2DOI-vdWhs will be highlighted. Subsequently, a special focus will be given on the discussion of the optical and electronic properties of the single-component 2D materials and their vdWhs, which will be closely relevant to their structures, so that we can establish a general structure-property relationship of 2DOI-vdWhs. In addition to these physical properties, the (opto-)electronic devices such as transistors, photodetectors, sensors, spintronics, and neuromorphic devices as well as energy devices will be discussed. Finally, we provide an outlook to discuss the key challenges for the 2DOI-vdWhs and their future development. This review aims to provide a foundational understanding and inspire further innovation in the development of next-generation 2DOI-vdWhs with transformative technological potential.

Antiferromagnetic semimetal terahertz photodetectors enhanced through weak localization

Effective detection is critical for terahertz applications, yet it remains hindered by the unclear mechanisms that necessitate a deeper understanding of photosensitive materials with exotic physical phenomena. Here, we investigate the terahertz detection capabilities of the two-dimensional antiferromagnetic semimetal NbFeTe2. Our study reveals that the interaction between antiferromagnetic magnetic moments and electron spin induces disordered carriers to hop between localized states, resulting in a nonlinear increase in responsivity as temperature decreases. We integrate asymmetric electrodes to generate a sufficient Seebeck potential, enabling carriers to overcome the barrier of localized states and achieve reordering at room temperature. Additionally, the self-powered performance of the NbFeTe₂/graphene heterojunction is optimized by the built-in electric field, achieving peak responsivity of 220 V W-1 and noise equivalent power of <20 pW Hz-1/2. These results shed light on the potential of antiferromagnetic semimetals in large-area, high-speed imaging applications, marking a significant advancement in terahertz photonics.

Graphene Readout Silicon-Based Microtube Photodetectors for Encrypted Visible Light Communication

The implementation of an advanced light receiver is imperative for the widespread application of visible light communication. However, the integration of multifunctional and high-performance visible light receivers is still limited by device structure and system complexity. Herein, a graphene-readout silicon-based microtube photodetector is proposed as the receiver for omnidirectional Mbps-level visible light communication. The integration of graphene-semiconductor material systems simultaneously ensures the effective absorption of incident light and rapid readout of photogenerated carriers, and the device exhibits an ultrafast response speed of 75 ns and high responsivity of 6803 A W-1. In addition, the microtube photodetector realizes the omnidirectional light-trapping and enhanced polarization photodetection. As the receiving end of the visible light communication system, the microtube photodetector achieves a data rate of up to 778 Mbps, a field of view of 140°, and the encrypted visible light communication of polarized light, providing a new possibility for the future development of the internet of things and information security.

Green Preparation of S, N Co-Doped Low-Dimensional C Nanoribbon/C Dot Composites and Their Optoelectronic Response Properties in the Visible and NIR Regions

The green production of nanocomposites holds great potential for the development of new materials. Graphene is an important class of carbon-based materials. Despite its high carrier mobility, it has low light absorption and is a zero-bandgap material. In order to tune the bandgap and improve the light absorption, S, N co-doped low-dimensional C/C nanocomposites with polymer and graphene oxide nanoribbons (the graphene oxide nanoribbons were prepared by open zipping of carbon nanotubes in a previous study) were synthesized by one-pot carbonization through dimensional-interface and phase-interface tailoring of nanocomposites in this paper. The resulting C/C nanocomposites were coated on untreated A4 printing paper and the optoelectronic properties were investigated. The results showed that the S, N co-doped C/C nanoribbon/carbon dot hybrid exhibited enhanced photocurrent signals of the typical 650, 808, 980, and 1064 nm light sources and rapid interfacial charge transfer compared to the N-doped counterpart. These results can be attributed to the introduction of lone electron pairs of S, N elements, resulting in more transition energy and the defect passivation of carbon materials. In addition, the nanocomposite also exhibited some electrical switching response to the applied strain. The photophysical and doping mechanisms are discussed. This study provides a facile and green chemical approach to prepare hybrid materials with external stimuli response and multifunctionality. It provides some valuable information for the design of C/C functional nanocomposites through dimensional-interface and phase-interface tailoring and the interdisciplinary applications.

Nitrogen-Doped 3D-Graphene Advances Near-Infrared Photodetector for Logic Circuits and Image Sensors Overcoming 2D Limitations

The limitations of two-dimensional (2D) graphene in broadband photodetector are overcome by integrating nitrogen (N) doping into three-dimensional (3D) structures within silicon (Si) via plasma-assisted chemical vapor deposition (PACVD) technology. This contributes to the construction of vertical Schottky heterojunction broad-spectrum photodetectors and applications in logic devices and image sensors. The natural nanoscale resonant cavity structure of 3D-graphene enhances photon capture efficiency, thereby increasing photocarrier generation. N-doping can fine-tune the electronic structure, advancing the Schottky barrier height and reducing dark current. The as-fabricated photodetector exhibits exceptional self-driven photoresponse, especially at 1550 nm, with an excellent photoresponsivity (79.6 A/W), specific detectivity (1013 Jones), and rapid response of 130 μs. Moreover, it enables logic circuits, high-resolution pattern image recognition, and broadband spectra recording across the visible to near-infrared range (400-1550 nm). This research will provide new views and technical support for the development and widespread application of high-performance semiconductor-based graphene broadband detectors.

A parylene/graphene UV photodetector with ultrahigh responsivity and long term stability

Long term stability, high responsivity, and fast response speed are essential for the commercialization of graphene photodetectors (GPDs). In this work, a parylene/graphene UV photodetector with long term stability, ultrahigh responsivity and fast response speed, is demonstrated. Parylene as a stable physical and chemical insulating layer reduces the environmental sensitivity of graphene, and enhances the performances of GPDs. In addition, utilizing bilayer electrodes reduces the buckling and damage of graphene after transferring. The parylene/graphene UV photodetector exhibits an ultrahigh responsivity of 5.82 × 105AW-1under 325 nm light irradiation at 1 V bias. Additionally, it shows a fast response speed with a rise time of 80μs and a fall time of 17μs, and a long term stability at 405 nm wavelength which is absent in the device without parylene. The parylene/graphene UV photodetector possesses superior performances. This paves the way for the commercial application of the high-performance graphene hybrid photodetectors, and provides a practical method for maintaining the long term stability of two dimensional (2D) materials.

Demonstration of a 3D-Assembled Dual-Mode Photodetector Based on Tubular Graphene/III-V Semiconductors Heterostructure and Coplanar Three Electrodes

3D assembly technology is a cutting-edge methodology for constructing high-performance and multifunctional photodetectors since some attractive photodetection features such as light trapping effect, omnidirectional ability, and high spatial resolution can be introduced. However, there has not been any report of 3D-assembled multimode photodetectors owing to the lack of design and fabrication guideline of electrodes serving for 3D heterostructures. In this study, a 3D-assembled dual-mode photodetector (3DdmPD) was realized successfully via the clever electrical contact between the rolled-up tubular graphene/GaAs/InGaAs heterostructure and planar metal electrode. Arbitrary switching of three coplanar electrodes makes the as-fabricated tubular 3D photodetector work at the unbiased photodiode mode, which is suitable for energy conservation high-speed photodetection, or the biased photoconductive mode, which favors extremely weak light photodetection, fully showing the advantages of multifunctional detection. In more detail, the Ilight/Idark ratio reached as high as 2 × 104, and a responsivity of 42.3 mA/W, a detectivity of 1.5 × 1010 Jones, as well as a rising/falling time (τr/τf) of 360/370 μs were achieved under the self-driven photodiode mode. Excitingly, 3DdmPD shows omnidirectional photodetection ability at the same time. When 3DdmPD works at the photoconductive mode with 5 V bias, its responsivity is extremely high as 7.9 × 104 A/W and corresponding detectivity is increased to 1.0 × 1011 Jones. Benefiting from the totally independent coplanar electrodes, 3DdmPD is much more easily integrated as arrays that are expected to offer the function of high-speed omnidirectional image-sensing with ultralow power consumption than the planar counterparts which share communal bottom electrodes. We believe that our work can contribute to the progress of 3D-assembled optoelectronic devices.

Two-dimensional topological semimetals: an emerging candidate for terahertz detectors and on-chip integration

The importance of terahertz (THz) detection lies in its ability to provide detailed information in a non-destructive manner, making it a valuable tool across various domains including spectroscopy, communication, and security. The ongoing development of THz detectors aims to enhance their sensitivity, resolution and integration into compact and portable devices such as handheld scanners or integrated communication chips. Generally, two-dimensional (2D) materials are considered potential candidates for device miniaturization but detecting THz radiation using 2D semiconductors is generally difficult due to the ultra-small photon energy. However, this challenge is being addressed by the advent of topological semimetals (TSM) with zero-bandgap characteristics. These semimetals offer low-energy excitations in proximity to the Dirac point, which is particularly important for applications requiring a broad detection range. Their distinctive band structures with linear energy-momentum dispersion near the Fermi level also lead to high electron mobility and low effective mass. The presence of topologically protected dissipationless conducting channels and self-powered response provides a basis for low-energy integration. In order to establish paradigms for semimetal-based THz detectors, this review initially offers an analytical summary of THz detection principles. Then, the review demonstrates the distinct design of devices, the excellent performance derived from the topological surface state and unique band structures in TSM. Finally, we outline the prospective avenues for on-chip integration of TSM-based THz detectors. We believe this review can promote further research on the new generation of THz detectors and facilitate advancements in THz imaging, spectroscopy, and communication systems.

Multilevel design and construction in nanomembrane rolling for three-dimensional angle-sensitive photodetection

Releasing pre-strained two-dimensional nanomembranes to assemble on-chip three-dimensional devices is crucial for upcoming advanced electronic and optoelectronic applications. However, the release process is affected by many unclear factors, hindering the transition from laboratory to industrial applications. Here, we propose a quasistatic multilevel finite element modeling to assemble three-dimensional structures from two-dimensional nanomembranes and offer verification results by various bilayer nanomembranes. Take Si/Cr nanomembrane as an example, we confirm that the three-dimensional structural formation is governed by both the minimum energy state and the geometric constraints imposed by the edges of the sacrificial layer. Large-scale, high-yield fabrication of three-dimensional structures is achieved, and two distinct three-dimensional structures are assembled from the same precursor. Six types of three-dimensional Si/Cr photodetectors are then prepared to resolve the incident angle of light with a deep neural network model, opening up possibilities for the design and manufacturing methods of More-than-Moore-era devices.

Negative Photoconductivity of Fe3GeTe2 Crystal with Native Heterostructure for Ultraviolet to Terahertz Ultra-Broadband Photodetection

Gaining insight into the photoelectric behavior of ferromagnetic materials is significant for comprehensively grasping their intrinsic properties and broadening future application fields. Here, through a specially designed Fe3GeTe2/O-Fe3GeTe2 heterostructure, first, the broad-spectrum negative photoconductivity phenomenon of ferromagnetic nodal line semimetal Fe3GeTe2 is reported that covers UV-vis-infrared-terahertz bands (355 nm to 3000 µm), promising to compensate for the inadequacies of traditional optoelectronic devices. The significant suppression of photoexcitation conductivity is revealed to arise from the semimetal/oxidation (sMO) interface-assisted dual-response mechanism, in which the electron excitation origins from the semiconductor photoconductivity effect in high-energy photon region, and semimetal topological band-transition in low-energy photon region. High responsivities ranging from 103 to 100 mA W-1 are acquired within ultraviolet-terahertz bands under ±0.1 V bias voltage at room temperature. Notably, the responsivity of 2.572 A W-1 at 3000 µm (0.1 THz) and the low noise equivalent power of 26 pW Hz-1/2 surpass most state-of-the-art mainstream terahertz detectors. This research provides a new perspective for revealing the photoelectric conversion properties of Fe3GeTe2 crystal and paves the way for the development of spin-optoelectronic devices.

Recent Advances in Broadband Photodetectors from Infrared to Terahertz

The growing need for the multiband photodetection of a single scene has promoted the development of both multispectral coupling and broadband detection technologies. Photodetectors operating across the infrared (IR) to terahertz (THz) regions have many applications such as in optical communications, sensing imaging, material identification, and biomedical detection. In this review, we present a comprehensive overview of the latest advances in broadband photodetectors operating in the infrared to terahertz range, highlighting their classification, operating principles, and performance characteristics. We discuss the challenges faced in achieving broadband detection and summarize various strategies employed to extend the spectral response of photodetectors. Lastly, we conclude by outlining future research directions in the field of broadband photodetection, including the utilization of novel materials, artificial microstructure, and integration schemes to overcome current limitations. These innovative methodologies have the potential to achieve high-performance, ultra-broadband photodetectors.

The Synergistic Effect on the Mimetic Optical Structure of Feline Eyes toward Household Health Monitoring of Acute and Chronic Diseases

A breakthrough in the performance of bionic optical structures will only be achieved if we can obtain an in-depth understanding of the synergy mechanisms operating in natural optical structures and find ways to imitate them. In this work, inspired by feline eyes, an optical substrate that takes advantage of a synergistic effect that occurs between resonant and reflective structures was designed. The synergistic effect between the reflective and resonant components leads to a Raman enhancement factor (EF) of 1.16 × 107, which is much greater than that achieved using the reflective/resonant cavities on their own. Finite-difference time-domain (FDTD) simulations and experimental results together confirm that the mechanism of this synergistic effect is achieved by realizing multiple reflections and repeated absorptions of light, generating a strong local electric field. Thus, a 2-3 order of magnitude increase in sensitivity could be achieved. More importantly, with the homemade centrifugal device, above optical substrates were further used to develop a rapidly highly sensitive household health monitoring system (detection time <3 min). It can thus be used to give early warning of acute diseases with high risk (e.g., acute myocardial infarction (AMI) and cerebral peduncle). Due to the good reusability and storability (9% and 8% reduction in EF after washing 30 times and 9 months of storage, respectively) of the substrates, the substrates thus reduce detection costs (to ∼$1), making them much cheaper to use than the current gold-standard methods (e.g., ∼$16 for gout detection).

Self-Rolled-Up Ultrathin Single-Crystalline Silicon Nanomembranes for On-Chip Tubular Polarization Photodetectors

Freestanding single-crystalline nanomembranes and their assembly have broad application potential in photodetectors for integrated chips. However, the release and self-assembly process of single-crystalline semiconductor nanomembranes still remains a great challenge in on-chip processing and functional integration, and photodetectors based on nanomembrane always suffer from limited absorption of nanoscale thickness. Here, a non-destructive releasing and rolling process is employed to prepare tubular photodetectors based on freestanding single-crystalline Si nanomembranes. Spontaneous release and self-assembly are achieved by residual strain introduced by lattice mismatch at the epitaxial interface of Si and Ge, and the intrinsic stress and strain distributions in self-rolled-up Si nanomembranes are analyzed experimentally and computationally. The advantages of light trapping and wide-angle optical coupling are realized by tubular geometry. This Si microtube device achieves reliable Ohmic contact and exhibits a photoresponsivity of over 330 mA W-1 , a response time of 370 µs, and a light incident detection angle range of over 120°. Furthermore, the microtubular structure shows a distinct polarization angle-dependent light absorption, with a dichroic ratio of 1.24 achieved at 940 nm. The proposed Si-based microtubes provide new possibilities for the construction of multifunctional chips for integrated circuit ecosystems in the More than Moore era.

One-step rolling fabrication of VO2 tubular bolometers with polarization-sensitive and omnidirectional detection

Uncooled infrared detection based on vanadium dioxide (VO2) radiometer is highly demanded in temperature monitoring and security protection. The key to its breakthrough is to fabricate bolometer arrays with great absorbance and excellent thermal insulation using a straightforward procedure. Here, we show a tubular bolometer by one-step rolling VO2 nanomembranes with enhanced infrared detection. The tubular geometry enhances the thermal insulation, light absorption, and temperature sensitivity of freestanding VO2 nanomembranes. This tubular VO2 bolometer exhibits a detectivity of ~2 × 108 cm Hz1/2 W-1 in the ultrabroad infrared spectrum, a response time of ~2.0 ms, and a calculated noise-equivalent temperature difference of 64.5 mK. Furthermore, our device presents a workable structural paradigm for polarization-sensitive and omnidirectional light coupling bolometers. The demonstrated overall characteristics suggest that tubular bolometers have the potential to narrow performance and cost gap between photon detectors and thermal detectors with low cost and broad applications.

Mechanically-Guided 3D Assembly for Architected Flexible Electronics

Architected flexible electronic devices with rationally designed 3D geometries have found essential applications in biology, medicine, therapeutics, sensing/imaging, energy, robotics, and daily healthcare. Mechanically-guided 3D assembly methods, exploiting mechanics principles of materials and structures to transform planar electronic devices fabricated using mature semiconductor techniques into 3D architected ones, are promising routes to such architected flexible electronic devices. Here, we comprehensively review mechanically-guided 3D assembly methods for architected flexible electronics. Mainstream methods of mechanically-guided 3D assembly are classified and discussed on the basis of their fundamental deformation modes (i.e., rolling, folding, curving, and buckling). Diverse 3D interconnects and device forms are then summarized, which correspond to the two key components of an architected flexible electronic device. Afterward, structure-induced functionalities are highlighted to provide guidelines for function-driven structural designs of flexible electronics, followed by a collective summary of their resulting applications. Finally, conclusions and outlooks are given, covering routes to achieve extreme deformations and dimensions, inverse design methods, and encapsulation strategies of architected 3D flexible electronics, as well as perspectives on future applications.

Detecting terahertz wave by microphone based on the photoacoustic effect in graphene foam

Terahertz (THz) wave plays important roles in the research of material properties, the non-invasive human security check and the next generation wireless communication. The progress of the scientific and technological applications of THz wave is strongly dependent on the improvement of THz detectors. Here a novel THz wave detection scheme is proposed in which the THz radiation is detected by an audible microphone based on the photo-thermo-acoustic (PTA) effect in graphene foam. Thanks to the room-temperature broadband electromagnetic absorption characteristics of graphene foam and the fast heat transfer between graphene foam and ambient air, this detection method not only inherits the advantages of the photo-thermal THz detector such as room-temperature and full bandwidth, but also has a response time 3 orders of magnitude faster than the photo-thermal detector. Besides, no micro-antenna/electrode is required to fabricate in the graphene foam THz detector which greatly simplifies the detector design and decreases the fabrication cost. It concludes that the room-temperature, full-bandwidth, fast-speed (≥10 kHz), and easy-to-fabricate THz detector developed in this work has superior comprehensive performances among both the commercial THz detectors and the detectors recently developed in laboratory.

Overcoming Debye length limitations: Three-dimensional wrinkled graphene field-effect transistor for ultra-sensitive adenosine triphosphate detection

Adenosine triphosphate (ATP) is closely related to the pathogenesis of certain diseases, so the detection of trace ATP is of great significance to disease diagnosis and drug development. Graphene field-effect transistors (GFETs) have been proven to be a promising platform for the rapid and accurate detection of small molecules, while the Debye shielding limits the sensitive detection in real samples. Here, a three-dimensional wrinkled graphene field-effect transistor (3D WG-FET) biosensor for ultra-sensitive detection of ATP is demonstrated. The lowest detection limit of 3D WG-FET for analyzing ATP is down to 3.01 aM, which is much lower than the reported results. In addition, the 3D WG-FET biosensor shows a good linear electrical response to ATP concentrations in a broad range of detection from 10 aM to 10 pM. Meanwhile, we achieved ultra-sensitive (LOD: 10 aM) and quantitative (range from 10 aM to 100 fM) measurements of ATP in human serum. The 3D WG-FET also exhibits high specificity. This work may provide a novel approach to improve the sensitivity for the detection of ATP in complex biological matrix, showing a broad application value for early clinical diagnosis and food health monitoring.

Electronic supplementary materials

The online version contains supplementary material available at 10.1007/s11467-023-1281-7 and https://journal.hep.com.cn/fop/EN/10.1007/s11467-023-1281-7.

A broadband 3D microtubular photodetector based on a single wall carbon nanotube-graphene heterojunction

In this paper, a three-dimensional (3D) photodetector based on a single wall carbon nanotube (SWCNT) and graphene heterojunction has been fabricated by a self-rolled-up process. In the designed structure, graphene acted as the conductive channel and SWCNTs absorbed the incident light ranging from the visible to near-infrared bands. Compared to planar (two-dimensional, 2D) devices, 3D microcavities provided a natural resonant cavity to enhance the optical field, which improved the photoresponsivity. This 3D heterojunction photodetector realized a broadband photodetection from 470 to 940 nm with an ultrahigh photoresponsivity of 4.9 × 10⁴ A W^-1 (@ 590 nm) and 1.9 × 10⁴ A W^-1 (@ 940 nm), a fast photoresponse speed of 1.6 ms, and an excellent sensitivity of 2.28 × 10¹¹ Jones. Besides, the fabricated photodetector showed favorable mid-infrared detection with a photoresponsivity of 3.08 A W^-1 at 10.6 μm. Moreover, the photodetector exhibited a promising room-temperature imaging capability. The 3D heterojunction photodetector would provide a feasible pathway to realize graphene-based photodetectors with high performance and could be extended to be integrated with other light absorptive materials.

Nanomembrane-assembled nanophotonics and optoelectronics: from materials to applications

Nanophotonics and optoelectronics are the keys to the information transmission technology field. The performance of the devices crucially depends on the light-matter interaction, and it is found that three-dimensional (3D) structures may be associated with strong light field regulation for advantageous application. Recently, 3D assembly of flexible nanomembranes has attracted increasing attention in optical field, and novel optoelectronic device applications have been demonstrated with fantastic 3D design. In this review, we first introduce the fabrication of various materials in the form of nanomembranes. On the basis of the deformability of nanomembranes, 3D structures can be built by patterning and release steps. Specifically, assembly methods to build 3D nanomembrane are summarized as rolling, folding, buckling and pick-place methods. Incorporating functional materials and constructing fine structures are two important development directions in 3D nanophotonics and optoelectronics, and we settle previous researches on these two aspects. The extraordinary performance and applicability of 3D devices show the potential of nanomembrane assembly for future optoelectronic applications in multiple areas.

Lemon-juice derived highly efficient S-GQD/GO composite as a photocatalyst for regeneration of coenzyme under solar light

The innovation of a highly efficient and inexpensive graphene oxide-based photocatalyst is a challenging task for selective solar chemical regeneration/coenzyme such as nicotinamide adenine dinucleotide (NADH). Herein, we have designed lemon-juice derived highly efficient S-GQD/GO composite as a photocatalyst for regeneration of NADH under solar light. The rational design of a highly efficient photocatalytic system through the orientation of S-GQD on graphene oxide as solar light harvesting photocatalyst is explored for the first time for NADH regeneration. This highly solar light active S-GQD/GO composite photocatalyst upon integration with the NAD + is used for highly regioselective regeneration of coenzyme (76.36%). The present work provides the benchmark instances of graphene oxide-based material as a photocatalyst for selective regeneration of NADH under solar light and opens a new door for green synthesis.

High-performance one-dimensional MOSFET array photodetectors in the 0.8-µm standard CMOS process

This paper reports a series of novel photodetectors based on one-dimensional array of metal-oxide-semiconductor field-effect transistors (MOSFETs), which were fabricated using the standard 0.8-µm complementary metal oxide semiconductor (CMOS) process. Normally, the metal fingers of MOSFET must be manufactured above active region in standard CMOS process, causing MOSFET insensitive to light. The proposed photodetectors use the metal fingers of MOSFETs in a one-dimensional array to form periodical slit structures, which make the transmittance of incident light higher, due to the surface plasmons (SPs) resonance effect. The number of parallel MOSFETs in one-dimensional array is 3, 5, 7, 9 and 11. The experimental results show that all responsivities (Rv) are greater than 10³ A/W within visible and near-infrared spectra under room temperature and a maximum value of 1.40 × 10⁵ A/W is achieved, which is at least one order of magnitude larger than those of published photodetectors. Furthermore, a minimum noise equivalent power (NEP) of 5.86 fW/Hz^0.5 at 30 Hz and a maximum detectivity (D*) of 2.21 × 10¹³ Jones are obtained. The photodetectors still have good signal-to-noise ratio when the bandwidth is 1 GHz. At the same time, the optical scanning imaging was completed by utilizing the photodetectors. This combination of high Rv, excellent NEP, high speed and broad spectrum range photodetectors will be widely used in imaging systems.

A Novel Terahertz Detector Based on Asymmetrical FET Array in 55-nm Standard CMOS Process

This paper reports a novel, one-dimensional dense array of asymmetrical metal-oxide-semiconductor field-effect-transistor (MOSFET) THz detector, which has been fabricated in GlobalFoundries 55-nm CMOS technology. Compared with other technologies, the Si-based complementary metal-oxide-semiconductor (CMOS) dominates in industrial applications, owing to its easier integration and lower cost. However, as the frequency increases, the return loss between the antenna and detector will increase. The proposed THz detector has a short-period grating structure formed by MOSFET fingers in the array, which can serve as an effective antenna to couple incident THz radiation into the FET channels. It not only solved the problem of return loss effectively, but also greatly reduced the detector area. Meanwhile, since the THz signal is rectified at both the source and drain electrodes to generate two current signals with equal amplitude but opposite directions, the source drain voltage is not provided to reduce the power consumption. This leads to a poor performance of the THz detector. Therefore, by using an asymmetric structure for the gate fingers position to replace the source drain voltage, the performance of the detector in the case of zero power consumption can be effectively improved. Compared with the symmetrical MOSFET THz detector, R_v is increased by 183.3% and NEP is decreased by 67.7%.

Highly Sensitive Photodetectors Based on Monolayer MoS2 Field-Effect Transistors

Molybdenum disulfide (MoS₂) is a promising candidate for the development of high-performance photodetectors, due to its excellent electric and optoelectronic properties. However, most of the reported MoS₂ phototransistors have adopted a back-gate field-effect transistor (FET) structure, requiring applied gate bias voltages as high as 70 V, which made it impossible to modulate each detecting device in the fabricated array. In this paper, buried-gate FETs based on CVD-grown monolayer MoS₂ were fabricated and their electric and photoelectric properties were also systematically investigated. A photoresponsivity of around 6.86 A/W was obtained at 395 nm, under the conditions of zero gate bias voltage and a light power intensity of 2.57 mW/cm². By application of a buried-gate voltage of 8 V, the photoresponsivity increased by nearly 10 times. Furthermore, the response speed of the buried-gate MoS₂ FET phototransistors is measured to be around 350 ms. These results pave the way for MoS₂ photodetectors in practical applications.

Mode-Locked YDFL Using Topological Insulator Bismuth Selenide Nanosheets as the Saturable Absorber

Fiber lasers have long remained relevant for various applications worldwide in many industries. This paper presents a mode-locked ytterbium-doped fiber laser (YDFL) using our home-made topological insulator Bi2Se3 nanosheets (TI Bi2Se3) as the saturable absorber. The fabricated TI Bi2Se3 is transported to the end of the fiber ferrule using an optical deposition process, which is a key ingredient for initiating a pulsed fiber laser. With a pump power of 211.1 mW, the captured repetition rate and pulse width are 8.3 MHz and 6.2 ns, respectively. The length of the setup configuration is approximately 20 m, which corresponds to an output power measurement of 12.4 mW with a calculated pulse energy of 1.5 nJ. There are no significant Kelly sidebands, but the strong stability of the pulsed laser is defined by a high signal-to-noise ratio (SNR) of around 60.35 dB.

High-responsivity photodetector using a grating-gate MOSFET in the 0.8-µm standard CMOS process

This letter reports a novel photodetector based on a metal-oxide-semiconductor field-effect transistor with a grating-gate structure, which was fabricated by employing the standard 0.8-µm complementary metal-oxide-semiconductor process. The use of a periodical slit structure allows the channel to be generated and exposed on the shallow surface, which makes the transmission and absorption of incident light more efficient, due to the surface plasmon resonance effect. The experimental results show that a responsivity (R_v) greater than 100 A/W was achieved within visible and near-infrared spectra under room temperature. Furthermore, a minimum noise equivalent power of 8.2 fW/Hz^0.5 at 15 Hz and a maximum detectivity (D*) of 1.7 × 10¹² Jones were obtained. It is believed that the photodetector will be widely used in communication or imaging systems.

Photo-modulated optical and electrical properties of graphene

Photo-modulation is a promising strategy for contactless and ultrafast control of optical and electrical properties of photoactive materials. Graphene is an attractive candidate material for photo-modulation due to its extraordinary physical properties and its relevance to a wide range of devices, from photodetectors to energy converters. In this review, we survey different strategies for photo-modulation of electrical and optical properties of graphene, including photogating, generation of hot carriers, and thermo-optical effects. We briefly discuss the role of nanophotonic strategies to maximize these effects and highlight promising fields for application of these techniques.

Highly Sensitive and Ultra-Broadband VO2(B) Photodetector Dominated by Bolometric Effect

In this study, Wadsley B phase vanadium oxide (VO₂(B)) with broad-band photoabsorption ability, a large temperature coefficient of resistance (TCR), and low noise was developed for uncooled broad-band detection. By using a freestanding structure and reducing the size of active area, the VO₂(B) photodetector shows stable and excellent performances in the visible to the terahertz region (405 nm to 0.88 mm), with a peak TCR of -4.77% K^-1 at 40 °C, a peak specific detectivity of 6.02 × 10⁹ Jones, and a photoresponse time of 83 ms. A terahertz imaging ability with 30 × 30 pixels was demonstrated. Scanning photocurrent imaging and real-time temperature-photocurrent measurements confirm that a photothermal-type bolometric effect is the dominating mechanism. The study shows the potential of VO₂(B) in applications as a new type of uncooled broad-band photodetection material and the potential to further raise the performance of broad-band photodetectors by structural design.

Highly Efficient, Ultrabroad PdSe2 Phototransistors from Visible to Terahertz Driven by Mutiphysical Mechanism

The noble transition metal dichalcogenide palladium diselenide (PdSe₂) is an ideal candidate material for broad-spectrum photodetection owing to the large bandgap tunability, high mobility, low thermal conductivity, and large Seebeck coefficient. In this study, self-powered ultrabroadband PdSe₂ photodetectors from the visible-infrared to terahertz (THz) region driven by a mutiphysical mechanism are reported. In the visible-infrared region, the photogenerated electron-hole pairs in the PdSe₂ body are quickly separated by the built-in electric field at the metal-semiconductor interface and achieve a photoresponsivity of 28 A·W^-1 at 405 nm and 0.4 A·W^-1 at 1850 nm. In the THz region, PdSe₂ photodetectors display a room-temperature responsivity of 20 mA·W^-1 at 0.10 THz and 5 mA·W^-1 at 0.24 THz based on efficient production of hot carriers in an antenna-assisted structure. Owing to the fast response speed of ∼7.5 μs and low noise equivalent power of ∼900 pW·Hz^-1/2, high-resolution transmission THz imaging is demonstrated under an ambient environment at room temperature. Our research validates the great potential of PdSe₂ for broadband photodetection and provides a possibility for future optoelectronic applications.

Physical and Chemical Sensors on the Basis of Laser-Induced Graphene: Mechanisms, Applications, and Perspectives

Laser-induced graphene (LIG) is produced rapidly by directly irradiating carbonaceous precursors, and it naturally exhibits as a three-dimensional porous structure. Due to advantages such as simple preparation, time-saving, environmental friendliness, low cost, and expanding categories of raw materials, LIG and its derivatives have achieved broad applications in sensors. This has been witnessed in various fields such as wearable devices, disease diagnosis, intelligent robots, and pollution detection. However, despite LIG sensors having demonstrated an excellent capability to monitor physical and chemical parameters, the systematic review of synthesis, sensing mechanisms, and applications of them combined with comparison against other preparation approaches of graphene is still lacking. Here, graphene-based sensors for physical, biological, and chemical detection are reviewed first, followed by the introduction of general preparation methods for the laser-induced method to yield graphene. The preparation and advantages of LIG, sensing mechanisms, and the properties of different types of emerging LIG-based sensors are comprehensively reviewed. Finally, possible solutions to the problems and challenges of preparing LIG and LIG-based sensors are proposed. This review may serve as a detailed reference to guide the development of LIG-based sensors that possess properties for future smart sensors in health care, environmental protection, and industrial production.

Mechanism, Material, Design, and Implementation Principle of Two-Dimensional Material Photodetectors

Two-dimensional (2D) materials may play an important role in future photodetectors due to their natural atom-thin body thickness, unique quantum confinement, and excellent electronic and photoelectric properties. Semimetallic graphene, semiconductor black phosphorus, and transition metal dichalcogenides possess flexible and adjustable bandgaps, which correspond to a wide interaction spectrum ranging from ultraviolet to terahertz. Nevertheless, their absorbance is relatively low, and it is difficult for a single material to cover a wide spectrum. Therefore, the combination of phototransistors based on 2D hybrid structures with other material platforms, such as quantum dots, organic materials, or plasma nanostructures, exhibit ultra-sensitive and broadband optical detection capabilities that cannot be ascribed to the individual constituents of the assembly. This article provides a comprehensive and systematic review of the recent research progress of 2D material photodetectors. First, the fundamental detection mechanism and key metrics of the 2D material photodetectors are introduced. Then, the latest developments in 2D material photodetectors are reviewed based on the strategies of photocurrent enhancement. Finally, a design and implementation principle for high-performance 2D material photodetectors is provided, together with the current challenges and future outlooks.

Unconventional van der Waals heterostructures beyond stacking

Two-dimensional crystals provide exceptional opportunities for integrating dissimilar materials and forming interfaces where distinct properties and phenomena emerge. To date, research has focused on two basic heterostructure types: vertical van der Waals stacks and laterally joined monolayer crystals with in-plane line interfaces. Much more diverse architectures and interface configurations can be realized in the few-layer and multilayer regime, and if mechanical stacking and single-layer growth are replaced by processes taking advantage of self-organization, conversions between polymorphs, phase separation, strain effects, and shaping into the third dimension. Here, we highlight such opportunities for engineering heterostructures, focusing on group IV chalcogenides, a class of layered semiconductors that lend themselves exceptionally well for exploring novel van der Waals architectures, as well as advanced methods including in situ microscopy during growth and nanometer-scale probes of light-matter interactions. The chosen examples point to fruitful future directions and inspire innovative developments to create unconventional van der Waals heterostructures beyond stacking.

Polarization-insensitive graphene photodetectors enhanced by a broadband metamaterial absorber

Graphene, combined with plasmonic nanostructures, shows great promise for achieving desirable photodetection properties and functionalities. Here, we theoretically proposed and experimentally demonstrated a graphene photodetector based on the metamaterial absorber in the visible and near-infrared wavebands. The experimental results show that the metamaterial-based graphene photodetector (MGPD) has achieved up to 3751% of photocurrent enhancement relative to an antennasless graphene device at zero external bias. Furthermore, the polarization-independent of photoresponse has resulted from the polarization-insensitive absorption of symmetric square-ring antennas. Moreover, the spectral-dependent photocurrent enhancement, originated from the enhanced light-trapping effect, was experimentally confirmed and understood by the simulated electric field profiles. The design contributes to the development of high-performance graphene photodetectors and optoelectronic devices.

Graphene oxide and polydimethylsiloxane coated quartz tuning fork for improved sensitive near- and mid-infrared detection

Sensitive and broadband infrared sensors are required for security and medical applications, as few can rapidly and sensitively detect infrared without uncooled devices. Here, we report a wideband optical-detection strategy based on the thermoelastic effect of a coating-enhanced quartz tuning fork (QTF) and study the feasibility of using an atomic force probe operating in contact mode to monitor the vibration. Graphene oxide (GO) and polydimethylsiloxane (PDMS) coating were applied on the QTF's surface to improve the light absorption and the thermal-mechanical conversion efficiency. Experimental results showed that the bi-layer coatings yielded a maximum gain factor of 8 in response amplitude and signal-to-noise ratio (SNR) than that of a bare QTF, respectively. Lasers with wavelengths of 1512 nm and 10.6 µm were used as the typical representative light source to test the photoresponse of the QTF detector. The device displays a broadband photoresponse covering the near-infrared to mid-infrared range at room temperature, high performance with the maximum photoresponsivity of 85.76 V·mW^-1, and 1σ detection limit of 0.056 µW; the lowest noise equivalent power (NEP) of 1.35 nW·Hz^-1/2 and 43.9 ms response speed is also achieved. The preparation process of detector is simple and easy to implement; the resulting device exhibits high responsivity and wide wavelength response ranging at least from 1512 to 10600 nm, compared with custom QTF; and the surface coating strategy potentially enables the construction of a new class of low-cost photodetection sensors operated at room temperature.

Plasmonic semiconductor nanogroove array enhanced broad spectral band millimetre and terahertz wave detection

High-performance uncooled millimetre and terahertz wave detectors are required as a building block for a wide range of applications. The state-of-the-art technologies, however, are plagued by low sensitivity, narrow spectral bandwidth, and complicated architecture. Here, we report semiconductor surface plasmon enhanced high-performance broadband millimetre and terahertz wave detectors which are based on nanogroove InSb array epitaxially grown on GaAs substrate for room temperature operation. By making a nanogroove array in the grown InSb layer, strong millimetre and terahertz wave surface plasmon polaritons can be generated at the InSb-air interfaces, which results in significant improvement in detecting performance. A noise equivalent power (NEP) of 2.2 × 10^-14 W Hz^-1/2 or a detectivity (D^*) of 2.7 × 10¹² cm Hz^1/2 W^-1 at 1.75 mm (0.171 THz) is achieved at room temperature. By lowering the temperature to the thermoelectric cooling available 200 K, the corresponding NEP and D^* of the nanogroove device can be improved to 3.8 × 10^-15 W Hz^-1/2 and 1.6 × 10¹³ cm Hz^1/2 W^-1, respectively. In addition, such a single device can perform broad spectral band detection from 0.9 mm (0.330 THz) to 9.4 mm (0.032 THz). Fast responses of 3.5 µs and 780 ns are achieved at room temperature and 200 K, respectively. Such high-performance millimetre and terahertz wave photodetectors are useful for wide applications such as high capacity communications, walk-through security, biological diagnosis, spectroscopy, and remote sensing. In addition, the integration of plasmonic semiconductor nanostructures paves a way for realizing high performance and multifunctional long-wavelength optoelectrical devices.

Research of nanopore structure of Ga2O3 film in MOCVD for improving the performance of UV photoresponse

Using the mechanism of self-reactive etching between Ga and Ga₂O₃, Ga₂O₃ nanopore films were fabricated. The self-reactive etching effects based on as-grown and annealed Ga₂O₃ films by metal organic chemical vapor deposition were compared. It was found that the nanopore film based on as-grown Ga₂O₃ film has a uniform size, high density and a small diameter. Ultraviolet-visible light reflection spectra and transmission spectra show that the nanopore film could effectively reduce the reflectivity of light and enhance the light absorption. Based on the as-grown Ga₂O₃ film and its nanopore film, metal-semiconductor-metal structure solar blind ultraviolet photodetectors (PD) were fabricated. Under 5 V bias, the light-dark current ratio of the nanopore film PD is about 2.5 × 10² times that of the film PD, the peak responsivity of the nanopore film PD is about 49 times that of the film PD. The rejection ratio is 4.6 × 10³, about 1.15 × 10² times that of the film PD. The nanopore structure effectively increases the surface-volume ratio of film. The photoelectric detection performance and response performance of the nanopore film PD could be significantly enhanced.

A Universal Fe/N Incorporated Graphdiyne for Printing Flexible Ferromagnetic Semiconducting Electronics

The vigorous development of two-dimensional materials puts forward higher requirements for more effective modulation of physical properties. Here, we utilize simple treatments for the emerging graphdiyne (GDY) materials to achieve dual control of magnetic and electrical properties through Fe/N codoping. The as-prepared Fe-N-GDY is confirmed as a highly conductive ferromagnetic semiconductor. The Curie temperature close to 205 K endows the materials promising application prospects in spin-related devices. Benefiting from uniform Fe/N comodification and performance optimization, such material could be used as carbon-based conductive ink for printed devices, such as a printed field-effect transistor (FET), which achieves a high mobility of 215 cm² V^-1 s^-1. Even when printing Fe-N-GDY ink to assemble flexible FETs with an ionic liquid gate, the excellent transfer characteristics can be maintained and demonstrate stability with temperature. Those results provide a facile way to modulate GDY's properties and promote its application potential in large-area, multifunctional integrated electronic devices, including wearable devices.

A novel three-dimensional Ag nanoparticles/reduced graphene oxide microtubular field effect transistor sensor for NO2 detections

A novel three-dimensional (3D) microtubular NO2 field effect transistor (FET) sensor has been fabricated from 2D reduced graphene oxide (rGO) nanosheets decorated with Ag nanoparticles, by applying the self-roll-up technique. The electrical properties of 2D and 3D Ag NP/rGO FET sensors have been investigated and compared. Finally, the performance of the 3D sensors has been demonstrated, where the preliminary results show that our 3D Ag NP/rGO FET NO2 sensor exhibits a relatively fast response (response time of 116 s) to 20 parts per million NO2 with a response of 4.92% at room temperature at zero bias voltage and 2 V source-drain bias voltage. Moreover, characteristics of our 3D Ag NP/rGO FET sensors, e.g. response, response and recovery times, have been demonstrated to be tuned by adjusting the applied source-drain and gate biases. Compared to the 2D geometry, our 3D geometry occupies less device area, but with the same sensing area. This study provides a new way to optimize sensing device performance, and promotes its development for miniaturized and integrated gas-sensing applications for indoor health and safety detection, outdoor environmental monitoring, industrial pollution monitoring and beyond.

Large scale assembly of nanomaterials: mechanisms and applications

The large scale assembly of nanomaterials is the crucial factor contributing to the creation of high-performance devices based on nanotechnology, which have flourished in an unprecedented manner. In this review, we summarize the main methods for the large-scale integration of nanomaterials, including the bubble blown assembly, capillary-force-assisted assembly, electric-field-assisted assembly, and Langmuir-Blodgett assembly. Assembly principles and general procedures of these methods are described in detail. Then, instances of nanomaterials assembled at a large scale with different dimensional orders are introduced. The alignment and precise location of nanomaterials in a large area are emphasized here, which is the prerequisite for further applications. Additionally, we also focused on the recently advanced, efficient, and versatile devices that are mainly assembled using the aforementioned methods, including sensors, photovoltaic devices, field-effect transistors, and photodetectors. Finally, prospective and potential opportunities are presented.

Ultrabroadband, Ultraviolet to Terahertz, and High Sensitivity CH3NH3PbI3 Perovskite Photodetectors

Owning to the unique optical and electronic properties, organic-inorganic hybrid perovskites have made impressive progress in photodetection applications. However, achieving ultrabroadband detection over the ultraviolet (UV) to terahertz (THz) range remains a major challenge for perovskite photodetectors. Here, we report an ultrabroadband (UV-THz) dual-mechanism photodetector based on CH₃NH₃PbI₃ films. The photoresponse of the PD in the UV-visible (vis) and near-infrared (NIR)-THz bands is mainly caused by the photoconductive (PC) effect and bolometric effect, respectively. High responsivities ranging from 10⁵ to 10² mA W^-1 are acquired within UV-THz bands under 1 V bias voltage at room temperature. Moreover, the device also shows fast rise and decay times of 76 and 126 ns under 1064 nm laser illumination, respectively. This work provides insight into the thermoelectric characteristics of perovskite and offers a new way to realize ultrabroadband photodetectors notably for THz detector at room temperature.

A broadband all-fiber integrated graphene photodetector with CNT-enhanced responsivity

Carbon-based nanomaterials such as carbon nanotubes (CNTs) and graphene have great potential for high-performance all-carbon photodetectors due to their unique optical and electronic properties. Here, we assemble a hybrid CNT/graphene film prepared by depositing CNTs on a single layer graphene with a side-polished optical fiber to achieve a novel all-fiber integrated photodetector. Because CNTs strongly enhanced the interaction between graphene and the fiber mode, the photodetector shows an extra-high photoresponsivity over the visible and infrared region. Especially at 1550 nm, the photoresponsivity is found to be ∼1.48 × 10⁵ A W^-1, which is 6.5 times larger than those of photodetectors without CNTs. These findings provide a highly versatile, reproducible, and low-cost platform to integrate novel zero-, one-, and two-dimensional materials into optical fibers and deliver more sophisticated functionalities.

2D Material Optoelectronics for Information Functional Device Applications: Status and Challenges

Graphene and the following derivative 2D materials have been demonstrated to exhibit rich distinct optoelectronic properties, such as broadband optical response, strong and tunable light-mater interactions, and fast relaxations in the flexible nanoscale. Combining with optical platforms like fibers, waveguides, grating, and resonators, these materials has spurred a variety of active and passive applications recently. Herein, the optical and electrical properties of graphene, transition metal dichalcogenides, black phosphorus, MXene, and their derivative van der Waals heterostructures are comprehensively reviewed, followed by the design and fabrication of these 2D material-based optical structures in implementation. Next, distinct devices, ranging from lasers to light emitters, frequency convertors, modulators, detectors, plasmonic generators, and sensors, are introduced. Finally, the state-of-art investigation progress of 2D material-based optoelectronics offers a promising way to realize new conceptual and high-performance applications for information science and nanotechnology. The outlook on the development trends and important research directions are also put forward.

3D Self-Assembled Microelectronic Devices: Concepts, Materials, Applications

Modern microelectronic systems and their components are essentially 3D devices that have become smaller and lighter in order to improve performance and reduce costs. To maintain this trend, novel materials and technologies are required that provide more structural freedom in 3D over conventional microelectronics, as well as easier parallel fabrication routes while maintaining compatability with existing manufacturing methods. Self-assembly of initially planar membranes into complex 3D architectures offers a wealth of opportunities to accommodate thin-film microelectronic functionalities in devices and systems possessing improved performance and higher integration density. Existing work in this field, with a focus on components constructed from 3D self-assembly, is reviewed, and an outlook on their application potential in tomorrow's microelectronics world is provided.

Interface Engineering-Assisted 3D-Graphene/Germanium Heterojunction for High-Performance Photodetectors

Three-dimensional graphene (3D-Gr) with excellent light absorption properties has received enormous interest, but in conventional processes to prepare 3D-Gr, amorphous carbon layers are inevitably introduced as buffer layers that may degrade the performance of graphene-based devices. Herein, 3D-Gr is prepared on germanium (Ge) using two-dimensional graphene (2D-Gr) as the buffer layer. 2D-Gr as the buffer layer facilitates the in situ synthesis of 3D-Gr on Ge by plasma-enhanced chemical vapor deposition (PECVD) by promoting 2D-Gr nucleation and reducing the barrier height. The growth mechanism is investigated and described. The enhanced light absorption as confirmed by theoretical calculation and 3D-Gr/2D-Gr/Ge with a Schottky junction improves the performance of optoelectronic devices without requiring pre- and post-transfer processes. The photodetector constructed with 3D-Gr/2D-Gr/Ge shows an excellent responsivity of 1.7 A W^-1 and detectivity 3.42 × 10¹⁴ cm Hz^1/2 W^-1 at a wavelength of 1550 nm. This novel hybrid structure that incorporates 3D- and 2D-Gr into Ge-based integrated circuits and photodetectors delivers excellent performance and has large commercial potential.

Tunable Mid-Infrared Graphene Plasmonic Cross-Shaped Resonator for Demultiplexing Application

In this study, a tunable graphene plasmonic filter and a two-channel demultiplexer are proposed, simulated, and analyzed in the mid-infrared (MIR) region. We discuss the optical transmission spectra of the proposed cross-shaped resonator and the two-channel demultiplexer. The transmission spectra of the proposed MIR resonator are tunable by change of its dimensional parameters and the Fermi energy of the graphene. Our proposed structures have a single mode in the wavelength range of 5–12 µm. The minimum full width at half maximum (FWHM) and the maximum transmission ratio of the proposed resonator respectively reached 220 nm and 55%. Simulations are performed by use of three-dimensional finite-difference time-domain (3D-FDTD) method. Coupled mode theory (CMT) is used to investigate the structure theoretically. The numerical and the theoretical results are in good agreement. The performance of the proposed two-channel demultiplexer is investigated based on its crosstalk. The minimum value of crosstalk reaches −48.30 dB. Our proposed structures are capable of providing sub-wavelength confinement of light waves, useful in applications in MIR region.