1
|
Nian L, Sun H, Wang Z, Xu D, Hao B, Yan S, Li Y, Zhou J, Deng Y, Hao Y, Nie Y. Sr 4Al 2O 7: A New Sacrificial Layer with High Water Dissolution Rate for the Synthesis of Freestanding Oxide Membranes. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2307682. [PMID: 38238890 DOI: 10.1002/adma.202307682] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/31/2023] [Revised: 12/18/2023] [Indexed: 02/01/2024]
Abstract
Freestanding perovskite oxide membranes have drawn great attention recently since they offer exceptional structural tunability and stacking ability, providing new opportunities in fundamental research and potential device applications in silicon-based semiconductor technology. Among different types of sacrificial layers, the (Ca, Sr, Ba)3Al2O6 compounds are most widely used since they can be dissolved in water and prepare high-quality perovskite oxide membranes with clean and sharp surfaces and interfaces; However, the typical transfer process takes a long time (up to hours) in obtaining millimeter-size freestanding membranes, let alone realize wafer-scale samples with high yield. Here, a new member of the SrO-Al2O3 family, Sr4Al2O7 is introduced, and its high dissolution rate, ≈10 times higher than that of Sr3Al2O6 is demonstrated. The high-dissolution-rate of Sr4Al2O7 is most likely related to the more discrete Al-O networks and higher concentration of water-soluble Sr-O species in this compound. This work significantly facilitates the preparation of freestanding membranes and sheds light on the integration of multifunctional perovskite oxides in practical electronic devices.
Collapse
Affiliation(s)
- Leyan Nian
- National Laboratory of Solid State Microstructures, Jiangsu Key Laboratory of Artificial Functional Materials, College of Engineering and Applied Sciences, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210023, P. R. China
- Suzhou Laboratory, Suzhou, 215125, P. R. China
| | - Haoying Sun
- National Laboratory of Solid State Microstructures, Jiangsu Key Laboratory of Artificial Functional Materials, College of Engineering and Applied Sciences, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210023, P. R. China
| | - Zhichao Wang
- National Laboratory of Solid State Microstructures, Jiangsu Key Laboratory of Artificial Functional Materials, College of Engineering and Applied Sciences, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210023, P. R. China
| | - Duo Xu
- National Laboratory of Solid State Microstructures, Jiangsu Key Laboratory of Artificial Functional Materials, College of Engineering and Applied Sciences, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210023, P. R. China
| | - Bo Hao
- National Laboratory of Solid State Microstructures, Jiangsu Key Laboratory of Artificial Functional Materials, College of Engineering and Applied Sciences, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210023, P. R. China
| | - Shengjun Yan
- National Laboratory of Solid State Microstructures, Jiangsu Key Laboratory of Artificial Functional Materials, College of Engineering and Applied Sciences, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210023, P. R. China
| | - Yueying Li
- National Laboratory of Solid State Microstructures, Jiangsu Key Laboratory of Artificial Functional Materials, College of Engineering and Applied Sciences, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210023, P. R. China
| | - Jian Zhou
- National Laboratory of Solid State Microstructures, Jiangsu Key Laboratory of Artificial Functional Materials, College of Engineering and Applied Sciences, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210023, P. R. China
| | - Yu Deng
- National Laboratory of Solid State Microstructures, Jiangsu Key Laboratory of Artificial Functional Materials, College of Engineering and Applied Sciences, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210023, P. R. China
| | - Yufeng Hao
- National Laboratory of Solid State Microstructures, Jiangsu Key Laboratory of Artificial Functional Materials, College of Engineering and Applied Sciences, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210023, P. R. China
| | - Yuefeng Nie
- National Laboratory of Solid State Microstructures, Jiangsu Key Laboratory of Artificial Functional Materials, College of Engineering and Applied Sciences, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210023, P. R. China
| |
Collapse
|
2
|
Zhang J, Lin T, Wang A, Wang X, He Q, Ye H, Lu J, Wang Q, Liang Z, Jin F, Chen S, Fan M, Guo EJ, Zhang Q, Gu L, Luo Z, Si L, Wu W, Wang L. Super-tetragonal Sr 4Al 2O 7 as a sacrificial layer for high-integrity freestanding oxide membranes. Science 2024; 383:388-394. [PMID: 38271502 DOI: 10.1126/science.adi6620] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 05/18/2023] [Accepted: 12/13/2023] [Indexed: 01/27/2024]
Abstract
Identifying a suitable water-soluble sacrificial layer is crucial to fabricating large-scale freestanding oxide membranes, which offer attractive functionalities and integrations with advanced semiconductor technologies. Here, we introduce a water-soluble sacrificial layer, "super-tetragonal" Sr4Al2O7 (SAOT). The low-symmetric crystal structure enables a superior capability to sustain epitaxial strain, allowing for broad tunability in lattice constants. The resultant structural coherency and defect-free interface in perovskite ABO3/SAOT heterostructures effectively restrain crack formation during the water release of freestanding oxide membranes. For a variety of nonferroelectric oxide membranes, the crack-free areas can span up to a millimeter in scale. This compelling feature, combined with the inherent high water solubility, makes SAOT a versatile and feasible sacrificial layer for producing high-quality freestanding oxide membranes, thereby boosting their potential for innovative device applications.
Collapse
Affiliation(s)
- Jinfeng Zhang
- Hefei National Research Center for Physical Sciences at Microscale, University of Science and Technology of China, Hefei 230026, China
| | - Ting Lin
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
| | - Ao Wang
- Hefei National Research Center for Physical Sciences at Microscale, University of Science and Technology of China, Hefei 230026, China
| | - Xiaochao Wang
- School of Physics, Northwest University, Xi'an 710127, China
| | - Qingyu He
- National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei 230026, China
| | - Huan Ye
- Hefei National Research Center for Physical Sciences at Microscale, University of Science and Technology of China, Hefei 230026, China
| | - Jingdi Lu
- Hefei National Research Center for Physical Sciences at Microscale, University of Science and Technology of China, Hefei 230026, China
| | - Qing Wang
- Hefei National Research Center for Physical Sciences at Microscale, University of Science and Technology of China, Hefei 230026, China
| | - Zhengguo Liang
- Hefei National Research Center for Physical Sciences at Microscale, University of Science and Technology of China, Hefei 230026, China
| | - Feng Jin
- Hefei National Research Center for Physical Sciences at Microscale, University of Science and Technology of China, Hefei 230026, China
| | - Shengru Chen
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
| | - Minghui Fan
- Hefei National Research Center for Physical Sciences at Microscale, University of Science and Technology of China, Hefei 230026, China
| | - Er-Jia Guo
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
| | - Qinghua Zhang
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
| | - Lin Gu
- Beijing National Center for Electron Microscopy and Laboratory of Advanced Materials, Department of Materials Science and Engineering, Tsinghua University, Beijing 100084, China
| | - Zhenlin Luo
- National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei 230026, China
| | - Liang Si
- School of Physics, Northwest University, Xi'an 710127, China
- Institut für Festkörperphysik, TU Wien, 1040 Vienna, Austria
| | - Wenbin Wu
- Hefei National Research Center for Physical Sciences at Microscale, University of Science and Technology of China, Hefei 230026, China
- Institutes of Physical Science and Information Technology, Anhui University, Hefei 230601, China
- Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China
| | - Lingfei Wang
- Hefei National Research Center for Physical Sciences at Microscale, University of Science and Technology of China, Hefei 230026, China
| |
Collapse
|
3
|
Sun Q, Zhou X, Liu X, Yuan Y, Sun L, Wang D, Xue F, Luo H, Zhang D, Sun J. Quasi-Zero-Dimensional Ferroelectric Polarization Charges-Coupled Resistance Switching with High-Current Density in Ultrascaled Semiconductors. NANO LETTERS 2024; 24:975-982. [PMID: 38189647 DOI: 10.1021/acs.nanolett.3c04378] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 01/09/2024]
Abstract
Ferroelectric memristors hold immense promise for advanced memory and neuromorphic computing. However, they face limitations due to low readout current density in conventional designs with low-conductive ferroelectric channels, especially at the nanoscale. Here, we report a ferroelectric-mediated memristor utilizing a 2D MoS2 nanoribbon channel with an ultrascaled cross-sectional area of <1000 nm2, defined by a ferroelectric BaTiO3 nanoribbon stacked on top. Strikingly, the Schottky barrier at the MoS2 contact can be effectively tuned by the charge transfers coupled with quasi-zero-dimensional polarization charges formed at the two ends of the nanoribbon, which results in distinctive resistance switching accompanied by multiple negative differential resistance showing the high-current density of >104 A/cm2. The associated space charges in BaTiO3 are minimized to ∼3.7% of the polarization charges, preserving nonvolatile polarization. This achievement establishes ferroelectric-mediated nanoscale semiconductor memristors with high readout current density as promising candidates for memory and highly energy-efficient in-memory computing applications.
Collapse
Affiliation(s)
- Qi Sun
- School of Physics, Central South University, Changsha, 410083, Hunan, China
| | - Xuefan Zhou
- State Key Laboratory of Powder Metallurgy, Central South University, Changsha, 410083, Hunan, China
| | - Xiaochi Liu
- School of Physics, Central South University, Changsha, 410083, Hunan, China
| | - Yahua Yuan
- School of Physics, Central South University, Changsha, 410083, Hunan, China
| | - Linfeng Sun
- School of Physics, Beijing Institute of Technology, Beijing 100081, China
| | - Ding Wang
- ZJU-Hangzhou Global Scientific and Technological Innovation Center, School of Micro-Nano Electronics, Zhejiang University, Hangzhou 311215, China
| | - Fei Xue
- ZJU-Hangzhou Global Scientific and Technological Innovation Center, School of Micro-Nano Electronics, Zhejiang University, Hangzhou 311215, China
| | - Hang Luo
- State Key Laboratory of Powder Metallurgy, Central South University, Changsha, 410083, Hunan, China
| | - Dou Zhang
- State Key Laboratory of Powder Metallurgy, Central South University, Changsha, 410083, Hunan, China
| | - Jian Sun
- School of Physics, Central South University, Changsha, 410083, Hunan, China
| |
Collapse
|
4
|
Fang H, Wang J, Nie F, Zhang N, Yu T, Zhao L, Shi C, Zhang P, He B, Lü W, Zheng L. Giant Electroresistance in Ferroelectric Tunnel Junctions via High-Throughput Designs: Toward High-Performance Neuromorphic Computing. ACS APPLIED MATERIALS & INTERFACES 2024; 16:1015-1024. [PMID: 38156871 DOI: 10.1021/acsami.3c13171] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 01/03/2024]
Abstract
Ferroelectric tunnel junctions (FTJs) have been regarded as one of the most promising candidates for next-generation devices for data storage and neuromorphic computing owing to their advantages such as fast operation speed, low energy consumption, convenient 3D stack ability, etc. Here, dramatically different from the conventional engineering approaches, we have developed a tunnel barrier decoration strategy to improve the ON/OFF ratio, where the ultrathin SrTiO3 (STO) dielectric layers are periodically mounted onto the BaTiO3 (BTO) ferroelectric tunnel layer using the high-throughput technique. The inserted STO enhances the local tetragonality of the BTO, resulting in a strengthened ferroelectricity in the tunnel layer, which greatly improves the OFF state and reduces the ON state. Combined with the optimized oxygen migration, which can further manipulate the tunneling barrier, a record-high ON/OFF ratio of ∼108 has been achieved. Furthermore, utilizing these FTJ-based artificial synapses, an artificial neural network has been simulated via back-propagation algorithms, and a classification accuracy as high as 92% has been achieved. This study screens out the prominent FTJ by the high-throughput technique, advancing the tunnel layer decoration at the atomic level in the FTJ design and offering a fundamental understanding of the multimechanisms in the tunnel barrier.
Collapse
Affiliation(s)
- Hong Fang
- Functional Materials and Acousto-Optic Instruments Institute, School of Instrumentation Science and Engineering, Harbin Institute of Technology, Harbin 150080, China
- Spintronics Institute, University of Jinan, Jinan 250022, China
| | - Jie Wang
- Functional Materials and Acousto-Optic Instruments Institute, School of Instrumentation Science and Engineering, Harbin Institute of Technology, Harbin 150080, China
- Spintronics Institute, University of Jinan, Jinan 250022, China
| | - Fang Nie
- School of Physics, State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China
| | - Nana Zhang
- Spintronics Institute, University of Jinan, Jinan 250022, China
| | - Tongliang Yu
- School of Physics, State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China
| | - Le Zhao
- School of Information and Automation Engineering, Qilu University of Technology (Shandong Academy of Sciences), Jinan 250353, China
| | - Chaoqun Shi
- Spintronics Institute, University of Jinan, Jinan 250022, China
| | - Peng Zhang
- Spintronics Institute, University of Jinan, Jinan 250022, China
| | - Bin He
- Spintronics Institute, University of Jinan, Jinan 250022, China
| | - Weiming Lü
- Functional Materials and Acousto-Optic Instruments Institute, School of Instrumentation Science and Engineering, Harbin Institute of Technology, Harbin 150080, China
- Spintronics Institute, University of Jinan, Jinan 250022, China
| | - Limei Zheng
- School of Physics, State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China
| |
Collapse
|
5
|
Wu Q, Wang K, Simpson A, Hao Y, Wang J, Li D, Hong X. Electrode Effect on Ferroelectricity in Free-Standing Membranes of PbZr 0.2Ti 0.8O 3. ACS NANOSCIENCE AU 2023; 3:482-490. [PMID: 38144704 PMCID: PMC10740143 DOI: 10.1021/acsnanoscienceau.3c00032] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 07/01/2023] [Revised: 09/30/2023] [Accepted: 10/02/2023] [Indexed: 12/26/2023]
Abstract
We report the effects of screening capacity, surface roughness, and interfacial epitaxy of the bottom electrodes on the polarization switching, domain wall (DW) roughness, and ferroelectric Curie temperature (TC) of PbZr0.2Ti0.8O3 (PZT)-based free-standing membranes. Singe crystalline 10-50 nm (001) PZT and PZT/La0.67Sr0.33MnO3 (LSMO) membranes are prepared on Au, correlated oxide LSMO, and two-dimensional (2D) semiconductor MoS2 base layers. Switching the polarization of PZT yields nonvolatile current modulation in the MoS2 channel at room temperature, with an on/off ratio of up to 2 × 105 and no apparent decay for more than 3 days. Piezoresponse force microscopy studies show that the coercive field Ec for the PZT membranes varies from 0.75 to 3.0 MV cm-1 on different base layers and exhibits strong polarization asymmetry. The PZT/LSMO membranes exhibit significantly smaller Ec, with the samples transferred on LSMO showing symmetric Ec of about -0.26/+0.28 MV cm-1, smaller than that of epitaxial PZT films. The DW roughness exponent ζ points to 2D random bond disorder dominated DW roughening (ζ = 0.31) at room temperature. Upon thermal quench at progressively higher temperatures, ζ values for PZT membranes on Au and LSMO approach the theoretical value for 1D random bond disorder (ζ = 2/3), while samples on MoS2 exhibits thermal roughening (ζ = 1/2). The PZT membranes on Au, LSMO, and MoS2 show TC of about 763 ± 12, 725 ± 25, and 588 ± 12 °C, respectively, well exceeding the bulk value. Our study reveals the complex interplay between the electrostatic and mechanical boundary conditions in determining ferroelectricity in free-standing PZT membranes, providing important material parameters for the functional design of PZT-based flexible nanoelectronics.
Collapse
Affiliation(s)
- Qiuchen Wu
- Department
of Physics and Astronomy & Nebraska Center for Materials and Nanoscience, University of Nebraska−Lincoln, Lincoln, Nebraska 68588-0299, United
States
| | - Kun Wang
- Department
of Physics and Astronomy & Nebraska Center for Materials and Nanoscience, University of Nebraska−Lincoln, Lincoln, Nebraska 68588-0299, United
States
| | - Alyssa Simpson
- Department
of Physics and Astronomy & Nebraska Center for Materials and Nanoscience, University of Nebraska−Lincoln, Lincoln, Nebraska 68588-0299, United
States
| | - Yifei Hao
- Department
of Physics and Astronomy & Nebraska Center for Materials and Nanoscience, University of Nebraska−Lincoln, Lincoln, Nebraska 68588-0299, United
States
| | - Jia Wang
- Department
of Physics and Astronomy & Nebraska Center for Materials and Nanoscience, University of Nebraska−Lincoln, Lincoln, Nebraska 68588-0299, United
States
| | - Dawei Li
- Department
of Physics and Astronomy & Nebraska Center for Materials and Nanoscience, University of Nebraska−Lincoln, Lincoln, Nebraska 68588-0299, United
States
| | - Xia Hong
- Department
of Physics and Astronomy & Nebraska Center for Materials and Nanoscience, University of Nebraska−Lincoln, Lincoln, Nebraska 68588-0299, United
States
| |
Collapse
|
6
|
Kang KT, Corey ZJ, Hwang J, Sharma Y, Paudel B, Roy P, Collins L, Wang X, Lee JW, Oh YS, Kim Y, Yoo J, Lee J, Htoon H, Jia Q, Chen A. Heterogeneous Integration of Freestanding Bilayer Oxide Membrane for Multiferroicity. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2023; 10:e2207481. [PMID: 37012611 DOI: 10.1002/advs.202207481] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/16/2022] [Revised: 02/02/2023] [Indexed: 05/27/2023]
Abstract
Transition metal oxides exhibit a plethora of electrical and magnetic properties described by their order parameters. In particular, ferroic orderings offer access to a rich spectrum of fundamental physics phenomena, in addition to a range of technological applications. The heterogeneous integration of ferroelectric and ferromagnetic materials is a fruitful way to design multiferroic oxides. The realization of freestanding heterogeneous membranes of multiferroic oxides is highly desirable. In this study, epitaxial BaTiO3 /La0.7 Sr0.3 MnO3 freestanding bilayer membranes are fabricated using pulsed laser epitaxy. The membrane displays ferroelectricity and ferromagnetism above room temperature accompanying the finite magnetoelectric coupling constant. This study reveals that a freestanding heterostructure can be used to manipulate the structural and emergent properties of the membrane. In the absence of the strain caused by the substrate, the change in orbital occupancy of the magnetic layer leads to the reorientation of the magnetic easy-axis, that is, perpendicular magnetic anisotropy. These results of designing multiferroic oxide membranes open new avenues to integrate such flexible membranes for electronic applications.
Collapse
Affiliation(s)
- Kyeong Tae Kang
- Center for Integrated Nanotechnologies, Los Alamos National Laboratory, Los Alamos, NM, 87545, USA
- Department of Physics, Kyungpook National University, Daegu, 41566, South Korea
| | - Zachary J Corey
- Center for Integrated Nanotechnologies, Los Alamos National Laboratory, Los Alamos, NM, 87545, USA
- Department of Materials Design and Innovation, University of Buffalo - The State University of New York, Buffalo, NY, 14260, USA
| | - Jaejin Hwang
- Department of Physics, Pusan National University, Busan, 46241, South Korea
| | - Yogesh Sharma
- Center for Integrated Nanotechnologies, Los Alamos National Laboratory, Los Alamos, NM, 87545, USA
| | - Binod Paudel
- Center for Integrated Nanotechnologies, Los Alamos National Laboratory, Los Alamos, NM, 87545, USA
| | - Pinku Roy
- Center for Integrated Nanotechnologies, Los Alamos National Laboratory, Los Alamos, NM, 87545, USA
- Department of Materials Design and Innovation, University of Buffalo - The State University of New York, Buffalo, NY, 14260, USA
| | - Liam Collins
- Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, TN, 37831, USA
| | - Xueijing Wang
- Center for Integrated Nanotechnologies, Los Alamos National Laboratory, Los Alamos, NM, 87545, USA
| | - Joon Woo Lee
- Department of Physics, Ulsan National Institute of Science and Technology, Ulsan, 44919, South Korea
| | - Yoon Seok Oh
- Department of Physics, Ulsan National Institute of Science and Technology, Ulsan, 44919, South Korea
| | - Yeonhoo Kim
- Center for Integrated Nanotechnologies, Los Alamos National Laboratory, Los Alamos, NM, 87545, USA
- Interdisciplinary Materials Measurement Institute, Korea Research Institute of Standards and Science (KRISS), Daejeon, 34133, South Korea
| | - Jinkyoung Yoo
- Center for Integrated Nanotechnologies, Los Alamos National Laboratory, Los Alamos, NM, 87545, USA
| | - Jaekwang Lee
- Department of Physics, Pusan National University, Busan, 46241, South Korea
| | - Han Htoon
- Center for Integrated Nanotechnologies, Los Alamos National Laboratory, Los Alamos, NM, 87545, USA
| | - Quanxi Jia
- Department of Materials Design and Innovation, University of Buffalo - The State University of New York, Buffalo, NY, 14260, USA
| | - Aiping Chen
- Center for Integrated Nanotechnologies, Los Alamos National Laboratory, Los Alamos, NM, 87545, USA
| |
Collapse
|
7
|
Xu R, Crust KJ, Harbola V, Arras R, Patel KY, Prosandeev S, Cao H, Shao YT, Behera P, Caretta L, Kim WJ, Khandelwal A, Acharya M, Wang MM, Liu Y, Barnard ES, Raja A, Martin LW, Gu XW, Zhou H, Ramesh R, Muller DA, Bellaiche L, Hwang HY. Size-Induced Ferroelectricity in Antiferroelectric Oxide Membranes. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023; 35:e2210562. [PMID: 36739113 DOI: 10.1002/adma.202210562] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/14/2022] [Revised: 01/06/2023] [Indexed: 05/17/2023]
Abstract
Despite extensive studies on size effects in ferroelectrics, how structures and properties evolve in antiferroelectrics with reduced dimensions still remains elusive. Given the enormous potential of utilizing antiferroelectrics for high-energy-density storage applications, understanding their size effects will provide key information for optimizing device performances at small scales. Here, the fundamental intrinsic size dependence of antiferroelectricity in lead-free NaNbO3 membranes is investigated. Via a wide range of experimental and theoretical approaches, an intriguing antiferroelectric-to-ferroelectric transition upon reducing membrane thickness is probed. This size effect leads to a ferroelectric single-phase below 40 nm, as well as a mixed-phase state with ferroelectric and antiferroelectric orders coexisting above this critical thickness. Furthermore, it is shown that the antiferroelectric and ferroelectric orders are electrically switchable. First-principle calculations further reveal that the observed transition is driven by the structural distortion arising from the membrane surface. This work provides direct experimental evidence for intrinsic size-driven scaling in antiferroelectrics and demonstrates enormous potential of utilizing size effects to drive emergent properties in environmentally benign lead-free oxides with the membrane platform.
Collapse
Affiliation(s)
- Ruijuan Xu
- Department of Applied Physics, Stanford University, Stanford, CA, 94305, USA
- Stanford Institute for Materials and Energy Sciences, SLAC National Accelerator Laboratory, Menlo Park, CA, 94025, USA
- Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC, 27606, USA
| | - Kevin J Crust
- Stanford Institute for Materials and Energy Sciences, SLAC National Accelerator Laboratory, Menlo Park, CA, 94025, USA
- Department of Physics, Stanford University, Stanford, CA, 94305, USA
| | - Varun Harbola
- Stanford Institute for Materials and Energy Sciences, SLAC National Accelerator Laboratory, Menlo Park, CA, 94025, USA
- Department of Physics, Stanford University, Stanford, CA, 94305, USA
| | - Rémi Arras
- CEMES, Université de Toulouse, CNRS, UPS, 29 rue Jeanne Marvig, F-31055, Toulouse, France
| | - Kinnary Y Patel
- Physics Department and Institute for Nanoscience and Engineering, University of Arkansas, Fayetteville, AR, 72701, USA
| | - Sergey Prosandeev
- Physics Department and Institute for Nanoscience and Engineering, University of Arkansas, Fayetteville, AR, 72701, USA
| | - Hui Cao
- Materials Science Division, Argonne National Laboratory, Lemont, IL, 60439, USA
| | - Yu-Tsun Shao
- Department of Applied and Engineering Physics, Cornell University, Ithaca, NY, 14853, USA
- Mork Family Department of Chemical Engineering and Materials Science, University of Southern California, Los Angeles, CA, 90089, USA
| | - Piush Behera
- Department of Materials Science and Engineering, University of California, Berkeley, Berkeley, CA, 94720, USA
| | - Lucas Caretta
- Department of Materials Science and Engineering, University of California, Berkeley, Berkeley, CA, 94720, USA
- School of Engineering, Brown University, Providence, RI, 02912, USA
| | - Woo Jin Kim
- Department of Applied Physics, Stanford University, Stanford, CA, 94305, USA
- Stanford Institute for Materials and Energy Sciences, SLAC National Accelerator Laboratory, Menlo Park, CA, 94025, USA
| | - Aarushi Khandelwal
- Department of Applied Physics, Stanford University, Stanford, CA, 94305, USA
- Stanford Institute for Materials and Energy Sciences, SLAC National Accelerator Laboratory, Menlo Park, CA, 94025, USA
| | - Megha Acharya
- Department of Materials Science and Engineering, University of California, Berkeley, Berkeley, CA, 94720, USA
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, 94720, USA
| | - Melody M Wang
- Department of Materials Science and Engineering, Stanford University, Stanford, CA, 94305, USA
| | - Yin Liu
- Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC, 27606, USA
| | - Edward S Barnard
- The Molecular Foundry, Lawrence Berkeley National Laboratory, 1 Cyclotron Road, Berkeley, CA, 94720, USA
| | - Archana Raja
- The Molecular Foundry, Lawrence Berkeley National Laboratory, 1 Cyclotron Road, Berkeley, CA, 94720, USA
| | - Lane W Martin
- Department of Materials Science and Engineering, University of California, Berkeley, Berkeley, CA, 94720, USA
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, 94720, USA
| | - X Wendy Gu
- Department of Mechanical Engineering, Stanford University, Stanford, CA, 94305, USA
| | - Hua Zhou
- X-ray Science Division, Advanced Photon Source, Argonne National Laboratory, Lemont, IL, 60439, USA
| | - Ramamoorthy Ramesh
- Department of Materials Science and Nanoengineering, Department of Physics and Astronomy, Rice University, Houston, TX, 77251, USA
| | - David A Muller
- Department of Applied and Engineering Physics, Cornell University, Ithaca, NY, 14853, USA
| | - Laurent Bellaiche
- Physics Department and Institute for Nanoscience and Engineering, University of Arkansas, Fayetteville, AR, 72701, USA
| | - Harold Y Hwang
- Department of Applied Physics, Stanford University, Stanford, CA, 94305, USA
- Stanford Institute for Materials and Energy Sciences, SLAC National Accelerator Laboratory, Menlo Park, CA, 94025, USA
| |
Collapse
|
8
|
Chen Z, Liu X, Jiang J, Li R, Wang Y, Guo L, Xu Y, Mi W. Modulating Exchange Bias, Anisotropic Magnetoresistance, and Planar Hall Resistance of Flexible Co/MnN Epitaxial Bilayers on Mica by Bending Strain. ACS APPLIED MATERIALS & INTERFACES 2023; 15:6209-6216. [PMID: 36654188 DOI: 10.1021/acsami.2c21780] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/17/2023]
Abstract
The integration of ferromagnetic/antiferromagnetic bilayers with exchange bias effect on flexible substrates is crucial for flexible spintronics. Here, the epitaxial Co/MnN bilayers are deposited on mica by facing-target sputtering. A large in-plane exchange bias field (HEB) of 1800 Oe with a coercive field (HC) of 2750 Oe appears in the Co (3.8 nm)/MnN (15.0 nm) bilayer at 5 K after field cooling from 300 to 5 K. Effective interfacial exchange energy Jeff of the Co/MnN bilayer is 0.83 erg/cm2. The strain-induced maximum increase of HEB and HC reaches 18% and 21%, respectively, in the Co(3.8 nm)/MnN(15.0 nm) bilayer. Strain-modulated HEB is attributed to the change of interfacial exchange coupling between Co and MnN layers. HEB is inversely proportional to Co thickness but independent of MnN thickness. The change of HEB is less than 5% after 100 bending cycles, indicating mechanical durability. The out-of-plane exchange bias also appears since Co spins are not fully reversed due to the strong pinning effect. Anisotropic magnetoresistance (AMR) and planar Hall resistance (Rxy) show obvious hysteresis due to HEB. Exchange bias-induced phase difference of AMR and Rxy almost remains unchanged at different bending strains. The results provide the basis for understanding the bending strain tailored exchange bias.
Collapse
Affiliation(s)
- Zuolun Chen
- Tianjin Key Laboratory of Low Dimensional Materials Physics and Preparation Technology, School of Science, Tianjin University, Tianjin300354, China
| | - Xiang Liu
- College of Science, Civil Aviation University of China, Tianjin300300, China
| | - Jiawei Jiang
- Tianjin Key Laboratory of Low Dimensional Materials Physics and Preparation Technology, School of Science, Tianjin University, Tianjin300354, China
| | - Rui Li
- Tianjin Key Laboratory of Low Dimensional Materials Physics and Preparation Technology, School of Science, Tianjin University, Tianjin300354, China
| | - Yue Wang
- Tianjin Key Laboratory of Low Dimensional Materials Physics and Preparation Technology, School of Science, Tianjin University, Tianjin300354, China
| | - Liu Guo
- Tianjin Key Laboratory of Low Dimensional Materials Physics and Preparation Technology, School of Science, Tianjin University, Tianjin300354, China
| | - Yingdan Xu
- Tianjin Key Laboratory of Low Dimensional Materials Physics and Preparation Technology, School of Science, Tianjin University, Tianjin300354, China
| | - Wenbo Mi
- Tianjin Key Laboratory of Low Dimensional Materials Physics and Preparation Technology, School of Science, Tianjin University, Tianjin300354, China
| |
Collapse
|
9
|
Gong L, Wei M, Yu R, Ohta H, Katayama T. Significant Suppression of Cracks in Freestanding Perovskite Oxide Flexible Sheets Using a Capping Oxide Layer. ACS NANO 2022; 16:21013-21019. [PMID: 36411060 DOI: 10.1021/acsnano.2c08649] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/16/2023]
Abstract
Flexible and functional perovskite oxide sheets with high orientation and crystallization are the next step in the development of next-generation devices. One promising synthesis method is the lift-off and transfer method using a water-soluble sacrificial layer. However, the suppression of cracks during lift-off is a crucial problem that remains unsolved. In this study, we demonstrated that this problem can be solved by depositing amorphous Al2O3 capping layers on oxide sheets. Using this simple method, over 20 mm2 of crack-free, deep-ultraviolet transparent electrode La:SrSnO3 and ferroelectric Ba0.75Sr0.25TiO3 flexible sheets were obtained. By contrast, the sheets without any capping layers broke. The obtained sheets showed considerable flexibility and high functionality. The La:SrSnO3 sheet simultaneously exhibited a wide bandgap (4.4 eV) and high electrical conductivity (>103 S/cm). The Ba0.75Sr0.25TiO3 sheet exhibited clear room-temperature ferroelectricity with a remnant polarization of 17 μC/cm2. Our findings provide a simple transfer method for obtaining large, crack-free, high-quality, single-crystalline sheets.
Collapse
Affiliation(s)
- Lizhikun Gong
- Graduate School of Information Science and Technology, Hokkaido University, N14W9, Kita, Sapporo 060-0814, Japan
| | - Mian Wei
- Graduate School of Information Science and Technology, Hokkaido University, N14W9, Kita, Sapporo 060-0814, Japan
| | - Rui Yu
- Graduate School of Information Science and Technology, Hokkaido University, N14W9, Kita, Sapporo 060-0814, Japan
| | - Hiromichi Ohta
- Research Institute for Electronic Science, Hokkaido University, N20W10, Kita, Sapporo 001-0020, Japan
| | - Tsukasa Katayama
- Research Institute for Electronic Science, Hokkaido University, N20W10, Kita, Sapporo 001-0020, Japan
- JST-PRESTO, Kawaguchi, Saitama 332-0012, Japan
| |
Collapse
|
10
|
Nian L, Li J, Wang Z, Zhang T, Sun H, Li Y, Gao T, Deng Y, Nie Y, Hao Y. Synthesis of Oxide Interface-Based Two-Dimensional Electron Gas on Si. ACS APPLIED MATERIALS & INTERFACES 2022; 14:53442-53449. [PMID: 36383755 DOI: 10.1021/acsami.2c18934] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/16/2023]
Abstract
Two-dimensional electron gas (2DEG) at the interface of amorphous Al2O3/SrTiO3 (aAO/STO) heterostructures has received considerable attention owing to its convenience of fabrication and relatively high mobility. The integration of these 2DEG heterostructures on a silicon wafer is highly desired for electronic applications but remains challanging up to date. Here, conductive aAO/STO heterostructures have been synthesized on a silicon wafer via a growth-and-transfer method. A scanning transmission electron microscopy image shows flat and close contact between STO membranes and a Si wafer. Electron energy loss spectroscopic measurements reveal the interfacial Ti valence state evolution, which identifies the formation of 2D charge carriers confined at the interface of aAO/STO. This work provides a feasible strategy for the integration of 2DEG on a silicon wafer and other desired substrates for potential functional and flexible electronic devices.
Collapse
Affiliation(s)
- Leyan Nian
- National Laboratory of Solid State Microstructures, Jiangsu Key Laboratory of Artificial Functional Materials, College of Engineering and Applied Sciences, Collaborative Innovation Center of Advanced Microstructures, Nanjing, Jiangsu 210023, People's Republic of China
| | - Jiayi Li
- National Laboratory of Solid State Microstructures, Jiangsu Key Laboratory of Artificial Functional Materials, College of Engineering and Applied Sciences, Collaborative Innovation Center of Advanced Microstructures, Nanjing, Jiangsu 210023, People's Republic of China
| | - Zhichao Wang
- National Laboratory of Solid State Microstructures, Jiangsu Key Laboratory of Artificial Functional Materials, College of Engineering and Applied Sciences, Collaborative Innovation Center of Advanced Microstructures, Nanjing, Jiangsu 210023, People's Republic of China
| | - Tingting Zhang
- National Laboratory of Solid State Microstructures, Jiangsu Key Laboratory of Artificial Functional Materials, College of Engineering and Applied Sciences, Collaborative Innovation Center of Advanced Microstructures, Nanjing, Jiangsu 210023, People's Republic of China
| | - Haoying Sun
- National Laboratory of Solid State Microstructures, Jiangsu Key Laboratory of Artificial Functional Materials, College of Engineering and Applied Sciences, Collaborative Innovation Center of Advanced Microstructures, Nanjing, Jiangsu 210023, People's Republic of China
| | - Yueying Li
- National Laboratory of Solid State Microstructures, Jiangsu Key Laboratory of Artificial Functional Materials, College of Engineering and Applied Sciences, Collaborative Innovation Center of Advanced Microstructures, Nanjing, Jiangsu 210023, People's Republic of China
| | - Tianyi Gao
- National Laboratory of Solid State Microstructures, Jiangsu Key Laboratory of Artificial Functional Materials, College of Engineering and Applied Sciences, Collaborative Innovation Center of Advanced Microstructures, Nanjing, Jiangsu 210023, People's Republic of China
| | - Yu Deng
- National Laboratory of Solid State Microstructures, Jiangsu Key Laboratory of Artificial Functional Materials, College of Engineering and Applied Sciences, Collaborative Innovation Center of Advanced Microstructures, Nanjing, Jiangsu 210023, People's Republic of China
| | - Yuefeng Nie
- National Laboratory of Solid State Microstructures, Jiangsu Key Laboratory of Artificial Functional Materials, College of Engineering and Applied Sciences, Collaborative Innovation Center of Advanced Microstructures, Nanjing, Jiangsu 210023, People's Republic of China
| | - Yufeng Hao
- National Laboratory of Solid State Microstructures, Jiangsu Key Laboratory of Artificial Functional Materials, College of Engineering and Applied Sciences, Collaborative Innovation Center of Advanced Microstructures, Nanjing, Jiangsu 210023, People's Republic of China
| |
Collapse
|
11
|
Shen J, Dong Z, Qi M, Zhang Y, Zhu C, Wu Z, Li D. Observation of Moiré Patterns in Twisted Stacks of Bilayer Perovskite Oxide Nanomembranes with Various Lattice Symmetries. ACS APPLIED MATERIALS & INTERFACES 2022; 14:50386-50392. [PMID: 36287237 DOI: 10.1021/acsami.2c14746] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/16/2023]
Abstract
The design and fabrication of novel quantum devices in which exotic phenomena arise from moiré physics have sparked a new race of conceptualization and creation of artificial lattice structures. This interest is further extended to the research on thin-film transition metal oxides, with the goal of synthesizing twisted layers of perovskite oxides concurrently revealing moiré landscapes. By utilizing a sacrificial-layer-based approach, we show that such high-quality twisted bilayer oxide nanomembrane structures can be achieved. We observe atomic-scale distinct moiré patterns directly formed with different twist angles, and the symmetry-inequivalent nanomembranes can be stacked together to constitute new complex moiré configurations. This study paves the way to the construction of higher-order artificial oxide heterostructures based on different materials/symmetries and provides the materials foundation for investigating moiré-related electronic effects in an expanded selection of twisted oxide thin films.
Collapse
Affiliation(s)
- Jiaying Shen
- State Key Laboratory of Information Photonics and Optical Communications & School of Science, Beijing University of Posts and Telecommunications, Beijing100876, P. R. China
| | - Zhengang Dong
- State Key Laboratory of Information Photonics and Optical Communications & School of Science, Beijing University of Posts and Telecommunications, Beijing100876, P. R. China
- Department of Physics, City University of Hong Kong, Kowloon, Hong Kong999077, China
| | - MingQun Qi
- State Key Laboratory of Information Photonics and Optical Communications & School of Science, Beijing University of Posts and Telecommunications, Beijing100876, P. R. China
| | - Yang Zhang
- Institute of Modern Optics & Tianjin Key Laboratory of Micro-Scale Optical Information Science and Technology, Nankai University, Tianjin300071, P. R. China
| | - Chao Zhu
- SEU-FEI Nano-Pico Center, Key Laboratory of MEMS of Ministry of Education, Collaborative Innovation Center for Micro/Nano Fabrication, Device and System, Southeast University, Nanjing210096, China
| | - Zhenping Wu
- State Key Laboratory of Information Photonics and Optical Communications & School of Science, Beijing University of Posts and Telecommunications, Beijing100876, P. R. China
| | - Danfeng Li
- Department of Physics, City University of Hong Kong, Kowloon, Hong Kong999077, China
- Hong Kong Institute for Advanced Study, City University of Hong Kong, Kowloon, Hong Kong SAR999077, China
| |
Collapse
|
12
|
Pesquera D, Fernández A, Khestanova E, Martin LW. Freestanding complex-oxide membranes. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2022; 34:383001. [PMID: 35779514 DOI: 10.1088/1361-648x/ac7dd5] [Citation(s) in RCA: 6] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/22/2022] [Accepted: 07/01/2022] [Indexed: 06/15/2023]
Abstract
Complex oxides show a vast range of functional responses, unparalleled within the inorganic solids realm, making them promising materials for applications as varied as next-generation field-effect transistors, spintronic devices, electro-optic modulators, pyroelectric detectors, or oxygen reduction catalysts. Their stability in ambient conditions, chemical versatility, and large susceptibility to minute structural and electronic modifications make them ideal subjects of study to discover emergent phenomena and to generate novel functionalities for next-generation devices. Recent advances in the synthesis of single-crystal, freestanding complex oxide membranes provide an unprecedented opportunity to study these materials in a nearly-ideal system (e.g. free of mechanical/thermal interaction with substrates) as well as expanding the range of tools for tweaking their order parameters (i.e. (anti-)ferromagnetic, (anti-)ferroelectric, ferroelastic), and increasing the possibility of achieving novel heterointegration approaches (including interfacing dissimilar materials) by avoiding the chemical, structural, or thermal constraints in synthesis processes. Here, we review the recent developments in the fabrication and characterization of complex-oxide membranes and discuss their potential for unraveling novel physicochemical phenomena at the nanoscale and for further exploiting their functionalities in technologically relevant devices.
Collapse
Affiliation(s)
- David Pesquera
- Catalan Institute of Nanoscience and Nanotechnology (ICN2), CSIC and BIST Campus UAB, Bellaterra, Barcelona 08193, Spain
| | - Abel Fernández
- Department of Materials Science and Engineering, University of California, Berkeley, CA 94720, United States of America
| | | | - Lane W Martin
- Department of Materials Science and Engineering, University of California, Berkeley, CA 94720, United States of America
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720, United States of America
| |
Collapse
|
13
|
Li Y, Zatterin E, Conroy M, Pylypets A, Borodavka F, Björling A, Groenendijk DJ, Lesne E, Clancy AJ, Hadjimichael M, Kepaptsoglou D, Ramasse QM, Caviglia AD, Hlinka J, Bangert U, Leake SJ, Zubko P. Electrostatically Driven Polarization Flop and Strain-Induced Curvature in Free-Standing Ferroelectric Superlattices. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2022; 34:e2106826. [PMID: 35064954 DOI: 10.1002/adma.202106826] [Citation(s) in RCA: 9] [Impact Index Per Article: 4.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/29/2021] [Revised: 12/21/2021] [Indexed: 06/14/2023]
Abstract
The combination of strain and electrostatic engineering in epitaxial heterostructures of ferroelectric oxides offers many possibilities for inducing new phases, complex polar topologies, and enhanced electrical properties. However, the dominant effect of substrate clamping can also limit the electromechanical response and often leaves electrostatics to play a secondary role. Releasing the mechanical constraint imposed by the substrate can not only dramatically alter the balance between elastic and electrostatic forces, enabling them to compete on par with each other, but also activates new mechanical degrees of freedom, such as the macroscopic curvature of the heterostructure. In this work, an electrostatically driven transition from a predominantly out-of-plane polarized to an in-plane polarized state is observed when a PbTiO3 /SrTiO3 superlattice with a SrRuO3 bottom electrode is released from its substrate. In turn, this polarization rotation modifies the lattice parameter mismatch between the superlattice and the thin SrRuO3 layer, causing the heterostructure to curl up into microtubes. Through a combination of synchrotron-based scanning X-ray diffraction imaging, Raman scattering, piezoresponse force microscopy, and scanning transmission electron microscopy, the crystalline structure and domain patterns of the curved superlattices are investigated, revealing a strong anisotropy in the domain structure and a complex mechanism for strain accommodation.
Collapse
Affiliation(s)
- Yaqi Li
- Department of Physics and Astronomy, University College London, Gower Street, London, WC1E 6BT, UK
| | - Edoardo Zatterin
- Department of Physics and Astronomy, University College London, Gower Street, London, WC1E 6BT, UK
- ESRF, The European Synchrotron, 71 Avenue des Martyrs, Grenoble, 38000, France
| | - Michele Conroy
- Department of Materials, Imperial College London, Exhibition Road, London, SW7 2AZ, UK
- Department of Physics, Bernal Institute, University of Limerick, Limerick, V94 T9PX, Ireland
- London Centre for Nanotechnology, 17-19 Gordon Street, London, WC1H 0HA, UK
| | - Anastasiia Pylypets
- Institute of Physics of the Czech Academy of Sciences, Na Slovance 2, 18221 Praha 8, Czech Republic
| | - Fedir Borodavka
- Institute of Physics of the Czech Academy of Sciences, Na Slovance 2, 18221 Praha 8, Czech Republic
| | | | - Dirk J Groenendijk
- Kavli Institute of Nanoscience, Delft University of Technology, P.O. Box 5046, Delft, GA 2600, The Netherlands
| | - Edouard Lesne
- Kavli Institute of Nanoscience, Delft University of Technology, P.O. Box 5046, Delft, GA 2600, The Netherlands
| | - Adam J Clancy
- Department of Chemistry, University College London, 20 Gordon Street, London, WC1H 0AJ, UK
| | - Marios Hadjimichael
- Department of Quantum Matter Physics, University of Geneva, Geneva, 1211, Switzerland
| | - Demie Kepaptsoglou
- SuperSTEM Laboratory, SciTech Daresbury Campus, Daresbury, WA4 4AD, UK
- Department of Physics, University of York, York, YO10 5DD, UK
| | - Quentin M Ramasse
- SuperSTEM Laboratory, SciTech Daresbury Campus, Daresbury, WA4 4AD, UK
- Schools of Chemical and Process Engineering, & Physics and Astronomy, University of Leeds, Leeds, LS2 9JT, UK
| | - Andrea D Caviglia
- Kavli Institute of Nanoscience, Delft University of Technology, P.O. Box 5046, Delft, GA 2600, The Netherlands
| | - Jiri Hlinka
- Institute of Physics of the Czech Academy of Sciences, Na Slovance 2, 18221 Praha 8, Czech Republic
| | - Ursel Bangert
- Department of Physics, Bernal Institute, University of Limerick, Limerick, V94 T9PX, Ireland
| | - Steven J Leake
- ESRF, The European Synchrotron, 71 Avenue des Martyrs, Grenoble, 38000, France
| | - Pavlo Zubko
- Department of Physics and Astronomy, University College London, Gower Street, London, WC1E 6BT, UK
- London Centre for Nanotechnology, 17-19 Gordon Street, London, WC1H 0HA, UK
| |
Collapse
|
14
|
Li C, Li D, Zhang W, Li H, Yu G. Towards High‐Performance Resistive Switching Behavior through Embedding a D‐A System into 2D Imine‐Linked Covalent Organic Frameworks. Angew Chem Int Ed Engl 2021. [DOI: 10.1002/ange.202112924] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/08/2022]
Affiliation(s)
- Chenyu Li
- Beijing National Laboratory for Molecular Sciences CAS Research/Education Center for Excellence in Molecular Sciences Institute of Chemistry Chinese Academy of Sciences Beijing 100190 P. R. China
- School of Chemical Sciences University of Chinese Academy of Sciences Beijing 100049 P. R. China
| | - Dong Li
- Beijing National Laboratory for Molecular Sciences CAS Research/Education Center for Excellence in Molecular Sciences Institute of Chemistry Chinese Academy of Sciences Beijing 100190 P. R. China
- School of Chemical Sciences University of Chinese Academy of Sciences Beijing 100049 P. R. China
| | - Weifeng Zhang
- Beijing National Laboratory for Molecular Sciences CAS Research/Education Center for Excellence in Molecular Sciences Institute of Chemistry Chinese Academy of Sciences Beijing 100190 P. R. China
| | - Hao Li
- Beijing National Laboratory for Molecular Sciences CAS Research/Education Center for Excellence in Molecular Sciences Institute of Chemistry Chinese Academy of Sciences Beijing 100190 P. R. China
| | - Gui Yu
- Beijing National Laboratory for Molecular Sciences CAS Research/Education Center for Excellence in Molecular Sciences Institute of Chemistry Chinese Academy of Sciences Beijing 100190 P. R. China
- School of Chemical Sciences University of Chinese Academy of Sciences Beijing 100049 P. R. China
| |
Collapse
|
15
|
Li C, Li D, Zhang W, Li H, Yu G. Towards High-Performance Resistive Switching Behavior through Embedding a D-A System into 2D Imine-Linked Covalent Organic Frameworks. Angew Chem Int Ed Engl 2021; 60:27135-27143. [PMID: 34585820 DOI: 10.1002/anie.202112924] [Citation(s) in RCA: 17] [Impact Index Per Article: 5.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 09/22/2021] [Indexed: 12/22/2022]
Abstract
Developing new materials for the fabrication of resistive random-access memory is of great significance in this period of big data. Herein, we present a novel design strategy of embedding donor (D) and acceptor (A) fragments into imine-linked frameworks to construct resistive switching covalent organic frameworks (COFs) for high-performance memristors. Two D-A-type two-dimensional COFs, COF-BT-TT and COF-TT-TVT, were designed and synthesized using a conventional solvothermal approach, and high-quality thin films of these materials deposited on ITO substrate exhibited great potential as an active layer for memristors. Rewritable memristors based on 100 nm thick COF-TT-BT and COF-TT-TVT films showed a high ON/OFF current ratio (ca. 105 and 104 ) and low driving voltage (1.30 and 1.60 V). The cycle period and retention time for COF-TT-BT-based rewritable devices were as high as 319 cycles and 3.3×104 s at a constant voltage of 0.1 V (160 cycles and 1.2×104 s for the COF-TT-TVT memristor).
Collapse
Affiliation(s)
- Chenyu Li
- Beijing National Laboratory for Molecular Sciences, CAS Research/Education Center for Excellence in Molecular Sciences, Institute of Chemistry, Chinese Academy of Sciences, Beijing, 100190, P. R. China.,School of Chemical Sciences, University of Chinese Academy of Sciences, Beijing, 100049, P. R. China
| | - Dong Li
- Beijing National Laboratory for Molecular Sciences, CAS Research/Education Center for Excellence in Molecular Sciences, Institute of Chemistry, Chinese Academy of Sciences, Beijing, 100190, P. R. China.,School of Chemical Sciences, University of Chinese Academy of Sciences, Beijing, 100049, P. R. China
| | - Weifeng Zhang
- Beijing National Laboratory for Molecular Sciences, CAS Research/Education Center for Excellence in Molecular Sciences, Institute of Chemistry, Chinese Academy of Sciences, Beijing, 100190, P. R. China
| | - Hao Li
- Beijing National Laboratory for Molecular Sciences, CAS Research/Education Center for Excellence in Molecular Sciences, Institute of Chemistry, Chinese Academy of Sciences, Beijing, 100190, P. R. China
| | - Gui Yu
- Beijing National Laboratory for Molecular Sciences, CAS Research/Education Center for Excellence in Molecular Sciences, Institute of Chemistry, Chinese Academy of Sciences, Beijing, 100190, P. R. China.,School of Chemical Sciences, University of Chinese Academy of Sciences, Beijing, 100049, P. R. China
| |
Collapse
|
16
|
Dubnack O, Müller FA. Oxidic 2D Materials. MATERIALS 2021; 14:ma14185213. [PMID: 34576436 PMCID: PMC8469416 DOI: 10.3390/ma14185213] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 07/14/2021] [Revised: 09/07/2021] [Accepted: 09/08/2021] [Indexed: 11/18/2022]
Abstract
The possibility of producing stable thin films, only a few atomic layers thick, from a variety of materials beyond graphene has led to two-dimensional (2D) materials being studied intensively in recent years. By reducing the layer thickness and approaching the crystallographic monolayer limit, a variety of unexpected and technologically relevant property phenomena were observed, which also depend on the subsequent arrangement and possible combination of individual layers to form heterostructures. These properties can be specifically used for the development of multifunctional devices, meeting the requirements of the advancing miniaturization of modern manufacturing technologies and the associated need to stabilize physical states even below critical layer thicknesses of conventional materials in the fields of electronics, magnetism and energy conversion. Differences in the structure of potential two-dimensional materials result in decisive influences on possible growth methods and possibilities for subsequent transfer of the thin films. In this review, we focus on recent advances in the rapidly growing field of two-dimensional materials, highlighting those with oxidic crystal structure like perovskites, garnets and spinels. In addition to a selection of well-established growth techniques and approaches for thin film transfer, we evaluate in detail their application potential as free-standing monolayers, bilayers and multilayers in a wide range of advanced technological applications. Finally, we provide suggestions for future developments of this promising research field in consideration of current challenges regarding scalability and structural stability of ultra-thin films.
Collapse
Affiliation(s)
- Oliver Dubnack
- Otto Schott Institute of Materials Research (OSIM), Friedrich Schiller University Jena, Löbdergraben 32, 07743 Jena, Germany;
| | - Frank A. Müller
- Otto Schott Institute of Materials Research (OSIM), Friedrich Schiller University Jena, Löbdergraben 32, 07743 Jena, Germany;
- Center for Energy and Environmental Chemistry Jena (CEEC Jena), Friedrich Schiller University Jena, Philosophenweg 7a, 07743 Jena, Germany
- Correspondence:
| |
Collapse
|
17
|
Heterogeneous integration of single-crystalline rutile nanomembranes with steep phase transition on silicon substrates. Nat Commun 2021; 12:5019. [PMID: 34408136 PMCID: PMC8373986 DOI: 10.1038/s41467-021-24740-2] [Citation(s) in RCA: 5] [Impact Index Per Article: 1.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 11/24/2020] [Accepted: 06/29/2021] [Indexed: 11/28/2022] Open
Abstract
Unrestricted integration of single-crystal oxide films on arbitrary substrates has been of great interest to exploit emerging phenomena from transition metal oxides for practical applications. Here, we demonstrate the release and transfer of a freestanding single-crystalline rutile oxide nanomembranes to serve as an epitaxial template for heterogeneous integration of correlated oxides on dissimilar substrates. By selective oxidation and dissolution of sacrificial VO2 buffer layers from TiO2/VO2/TiO2 by H2O2, millimeter-size TiO2 single-crystalline layers are integrated on silicon without any deterioration. After subsequent VO2 epitaxial growth on the transferred TiO2 nanomembranes, we create artificial single-crystalline oxide/Si heterostructures with excellent sharpness of metal-insulator transition (\documentclass[12pt]{minimal}
\usepackage{amsmath}
\usepackage{wasysym}
\usepackage{amsfonts}
\usepackage{amssymb}
\usepackage{amsbsy}
\usepackage{mathrsfs}
\usepackage{upgreek}
\setlength{\oddsidemargin}{-69pt}
\begin{document}$$\triangle \rho /\rho$$\end{document}△ρ/ρ > 103) even in ultrathin (<10 nm) VO2 films that are not achievable via direct growth on Si. This discovery offers a synthetic strategy to release the new single-crystalline oxide nanomembranes and an integration scheme to exploit emergent functionality from epitaxial oxide heterostructures in mature silicon devices. Unrestricted integration of single-crystal oxide films on Si substrates allows for exploitation of emerging functionality of new materials in mature silicon devices. Here the authors integrate epitaxial oxide films with sharp metal-insulator transition on Si substrates by epitaxial lift-off of a freestanding nanomembrane.
Collapse
|
18
|
Eom K, Yu M, Seo J, Yang D, Lee H, Lee JW, Irvin P, Oh SH, Levy J, Eom CB. Electronically reconfigurable complex oxide heterostructure freestanding membranes. SCIENCE ADVANCES 2021; 7:7/33/eabh1284. [PMID: 34389541 PMCID: PMC8363151 DOI: 10.1126/sciadv.abh1284] [Citation(s) in RCA: 7] [Impact Index Per Article: 2.3] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/22/2021] [Accepted: 06/24/2021] [Indexed: 05/28/2023]
Abstract
In recent years, lanthanum aluminate/strontium titanate (LAO/STO) heterointerfaces have been used to create a growing family of nanoelectronic devices based on nanoscale control of LAO/STO metal-to-insulator transition. The properties of these devices are wide-ranging, but they are restricted by nature of the underlying thick STO substrate. Here, single-crystal freestanding membranes based on LAO/STO heterostructures were fabricated, which can be directly integrated with other materials via van der Waals stacking. The key properties of LAO/STO are preserved when LAO/STO membranes are formed. Conductive atomic force microscope lithography is shown to successfully create reversible patterns of nanoscale conducting regions, which survive to millikelvin temperatures. The ability to form reconfigurable conducting nanostructures on LAO/STO membranes opens opportunities to integrate a variety of nanoelectronics with silicon-based architectures and flexible, magnetic, or superconducting materials.
Collapse
Affiliation(s)
- Kitae Eom
- Department of Materials Science and Engineering, University of Wisconsin-Madison, Madison, WI 53706, USA
| | - Muqing Yu
- Department of Physics and Astronomy, University of Pittsburgh, Pittsburgh, PA 15260, USA
| | - Jinsol Seo
- Department of Energy Science, Sungkyunkwan University (SKKU), Suwon 16419, Republic of Korea
| | - Dengyu Yang
- Department of Physics and Astronomy, University of Pittsburgh, Pittsburgh, PA 15260, USA
| | - Hyungwoo Lee
- Department of Materials Science and Engineering, University of Wisconsin-Madison, Madison, WI 53706, USA
| | - Jung-Woo Lee
- Department of Materials Science and Engineering, University of Wisconsin-Madison, Madison, WI 53706, USA
| | - Patrick Irvin
- Department of Physics and Astronomy, University of Pittsburgh, Pittsburgh, PA 15260, USA
| | - Sang Ho Oh
- Department of Energy Science, Sungkyunkwan University (SKKU), Suwon 16419, Republic of Korea
| | - Jeremy Levy
- Department of Physics and Astronomy, University of Pittsburgh, Pittsburgh, PA 15260, USA.
| | - Chang-Beom Eom
- Department of Materials Science and Engineering, University of Wisconsin-Madison, Madison, WI 53706, USA.
| |
Collapse
|
19
|
Juraschek DM, Narang P. Highly Confined Phonon Polaritons in Monolayers of Perovskite Oxides. NANO LETTERS 2021; 21:5098-5104. [PMID: 34101474 DOI: 10.1021/acs.nanolett.1c01002] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
Two-dimensional (2D) materials are able to strongly confine light hybridized with collective excitations of atoms, enabling electric-field enhancements and novel spectroscopic applications. Recently, freestanding monolayers of perovskite oxides have been synthesized, which possess highly infrared-active phonon modes and a complex interplay of competing interactions. Here, we show that this new class of 2D materials exhibits highly confined phonon polaritons by evaluating central figures of merit for phonon polaritons in the tetragonal phases of the 2D perovskites SrTiO3, KTaO3, and LiNbO3, using density functional theory calculations. Specifically, we compute the 2D phonon-polariton dispersions, the propagation-quality, confinement, and deceleration factors, and we show that they are comparable to those found in the prototypical 2D dielectric hexagonal boron nitride. Our results suggest that monolayers of perovskite oxides are promising candidates for polaritonic platforms that enable new possibilities in terms of tunability and spectral ranges.
Collapse
Affiliation(s)
- Dominik M Juraschek
- Harvard John A. Paulson School of Engineering and Applied Sciences, Harvard University, Cambridge, Massachusetts 02138, United States
| | - Prineha Narang
- Harvard John A. Paulson School of Engineering and Applied Sciences, Harvard University, Cambridge, Massachusetts 02138, United States
| |
Collapse
|
20
|
Dahm RT, Erlandsen R, Trier F, Sambri A, Gennaro ED, Guarino A, Stampfer L, Christensen DV, Granozio FM, Jespersen TS. Size-Controlled Spalling of LaAlO 3/SrTiO 3 Micromembranes. ACS APPLIED MATERIALS & INTERFACES 2021; 13:12341-12346. [PMID: 33661598 DOI: 10.1021/acsami.0c21612] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
The ability to form freestanding oxide membranes of nanoscale thickness is of great interest for enabling material functionality and for integrating oxides in flexible electronic and photonic technologies. Recently, a route has been demonstrated for forming conducting heterostructure membranes of LaAlO3 and SrTiO3, the canonical system for oxide electronics. In this route, the epitaxial growth of LaAlO3 on SrTiO3 resulted in a strained state that relaxed by producing freestanding membranes with random sizes and locations. Here, we extend the method to enable self-formed LaAlO3/SrTiO3 micromembranes with control over membrane position, their lateral sizes from 2 to 20 μm, and with controlled transfer to other substrates of choice. This method opens up the possibility to study and use the two-dimensional electron gas in LaAlO3/SrTiO3 membranes for advanced device concepts.
Collapse
Affiliation(s)
- Rasmus T Dahm
- Center for Quantum Devices, Niels Bohr Institute, University of Copenhagen, Universitetsparken 5, 2100 Copenhagen, Denmark
- Department of Energy Conversion and Storage, Technical University of Denmark, Fysikvej, Building 310, 2800 Kgs. Lyngby, Denmark
| | - Ricci Erlandsen
- Center for Quantum Devices, Niels Bohr Institute, University of Copenhagen, Universitetsparken 5, 2100 Copenhagen, Denmark
- Department of Energy Conversion and Storage, Technical University of Denmark, Fysikvej, Building 310, 2800 Kgs. Lyngby, Denmark
| | - Felix Trier
- Center for Quantum Devices, Niels Bohr Institute, University of Copenhagen, Universitetsparken 5, 2100 Copenhagen, Denmark
| | - Alessia Sambri
- CNR-SPIN, Complesso Universitario di Monte S. Angelo, Via Cintia, 80126 Naples, Italy
| | - Emiliano Di Gennaro
- Dipartimento di Fisica "E. Pancini", Compl. Univ. di Monte S. Angelo, Università di Napoli "Federico II", Via Cintia, 80126 Napoli, Italy
| | - Anita Guarino
- Department of Physical Sciences and Technologies of Matter, CNR-DSFTM NFFA Trieste Area Science Park, Basovizza Strada Statale 14, 34149 Trieste, Italy
| | - Lukas Stampfer
- Center for Quantum Devices, Niels Bohr Institute, University of Copenhagen, Universitetsparken 5, 2100 Copenhagen, Denmark
| | - Dennis V Christensen
- Department of Energy Conversion and Storage, Technical University of Denmark, Fysikvej, Building 310, 2800 Kgs. Lyngby, Denmark
| | | | - Thomas S Jespersen
- Center for Quantum Devices, Niels Bohr Institute, University of Copenhagen, Universitetsparken 5, 2100 Copenhagen, Denmark
- Department of Energy Conversion and Storage, Technical University of Denmark, Fysikvej, Building 310, 2800 Kgs. Lyngby, Denmark
| |
Collapse
|
21
|
Zhang B, Yun C, MacManus-Driscoll JL. High Yield Transfer of Clean Large-Area Epitaxial Oxide Thin Films. NANO-MICRO LETTERS 2021; 13:39. [PMID: 34138235 PMCID: PMC8187697 DOI: 10.1007/s40820-020-00573-4] [Citation(s) in RCA: 9] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 09/18/2020] [Accepted: 11/19/2020] [Indexed: 06/12/2023]
Abstract
In this work, we have developed a new method for manipulating and transferring up to 5 mm × 10 mm epitaxial oxide thin films. The method involves fixing a PET frame onto a PMMA attachment film, enabling transfer of epitaxial films lifted-off by wet chemical etching of a Sr3Al2O6 sacrificial layer. The crystallinity, surface morphology, continuity, and purity of the films are all preserved in the transfer process. We demonstrate the applicability of our method for three different film compositions and structures of thickness ~ 100 nm. Furthermore, we show that by using epitaxial nanocomposite films, lift-off yield is improved by ~ 50% compared to plain epitaxial films and we ascribe this effect to the higher fracture toughness of the composites. This work shows important steps towards large-scale perovskite thin-film-based electronic device applications.
Collapse
Affiliation(s)
- Bowen Zhang
- Department of Materials Science and Metallurgy, University of Cambridge, 27 Charles Babbage Road, Cambridge, CB3 0FS, UK
| | - Chao Yun
- Department of Materials Science and Metallurgy, University of Cambridge, 27 Charles Babbage Road, Cambridge, CB3 0FS, UK
| | - Judith L MacManus-Driscoll
- Department of Materials Science and Metallurgy, University of Cambridge, 27 Charles Babbage Road, Cambridge, CB3 0FS, UK.
| |
Collapse
|
22
|
Pesquera D, Parsonnet E, Qualls A, Xu R, Gubser AJ, Kim J, Jiang Y, Velarde G, Huang YL, Hwang HY, Ramesh R, Martin LW. Beyond Substrates: Strain Engineering of Ferroelectric Membranes. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2020; 32:e2003780. [PMID: 32964567 DOI: 10.1002/adma.202003780] [Citation(s) in RCA: 23] [Impact Index Per Article: 5.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/02/2020] [Revised: 08/19/2020] [Indexed: 06/11/2023]
Abstract
Strain engineering in perovskite oxides provides for dramatic control over material structure, phase, and properties, but is restricted by the discrete strain states produced by available high-quality substrates. Here, using the ferroelectric BaTiO3 , production of precisely strain-engineered, substrate-released nanoscale membranes is demonstrated via an epitaxial lift-off process that allows the high crystalline quality of films grown on substrates to be replicated. In turn, fine structural tuning is achieved using interlayer stress in symmetric trilayer oxide-metal/ferroelectric/oxide-metal structures fabricated from the released membranes. In devices integrated on silicon, the interlayer stress provides deterministic control of ordering temperature (from 75 to 425 °C) and releasing the substrate clamping is shown to dramatically impact ferroelectric switching and domain dynamics (including reducing coercive fields to <10 kV cm-1 and improving switching times to <5 ns for a 20 µm diameter capacitor in a 100-nm-thick film). In devices integrated on flexible polymers, enhanced room-temperature dielectric permittivity with large mechanical tunability (a 90% change upon ±0.1% strain application) is demonstrated. This approach paves the way toward the fabrication of ultrafast CMOS-compatible ferroelectric memories and ultrasensitive flexible nanosensor devices, and it may also be leveraged for the stabilization of novel phases and functionalities not achievable via direct epitaxial growth.
Collapse
Affiliation(s)
- David Pesquera
- Department of Materials Science and Engineering, University of California, Berkeley, Berkeley, CA, 94720, USA
- Catalan Institute of Nanoscience and Nanotechnology (ICN2), CSIC and BIST, Campus UAB, Bellaterra, Barcelona, 08193, Spain
| | - Eric Parsonnet
- Department of Physics, University of California, Berkeley, CA, 94720, USA
| | - Alexander Qualls
- Department of Physics, University of California, Berkeley, CA, 94720, USA
| | - Ruijuan Xu
- Department of Applied Physics, Stanford University, Stanford, CA, 94305, USA
- Stanford Institute for Materials and Energy Sciences, SLAC National Accelerator Laboratory, Menlo Park, CA, 94025, USA
| | - Andrew J Gubser
- Department of Nuclear Engineering, University of California, Berkeley, Berkeley, CA, 94720, USA
| | - Jieun Kim
- Department of Materials Science and Engineering, University of California, Berkeley, Berkeley, CA, 94720, USA
| | - Yizhe Jiang
- Department of Materials Science and Engineering, University of California, Berkeley, Berkeley, CA, 94720, USA
| | - Gabriel Velarde
- Department of Materials Science and Engineering, University of California, Berkeley, Berkeley, CA, 94720, USA
| | - Yen-Lin Huang
- Department of Materials Science and Engineering, University of California, Berkeley, Berkeley, CA, 94720, USA
| | - Harold Y Hwang
- Department of Applied Physics, Stanford University, Stanford, CA, 94305, USA
- Stanford Institute for Materials and Energy Sciences, SLAC National Accelerator Laboratory, Menlo Park, CA, 94025, USA
| | - Ramamoorthy Ramesh
- Department of Materials Science and Engineering, University of California, Berkeley, Berkeley, CA, 94720, USA
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, 94720, USA
| | - Lane W Martin
- Department of Materials Science and Engineering, University of California, Berkeley, Berkeley, CA, 94720, USA
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, 94720, USA
| |
Collapse
|
23
|
Wen Z, Wu D. Ferroelectric Tunnel Junctions: Modulations on the Potential Barrier. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2020; 32:e1904123. [PMID: 31583775 DOI: 10.1002/adma.201904123] [Citation(s) in RCA: 51] [Impact Index Per Article: 12.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/29/2019] [Revised: 08/16/2019] [Indexed: 06/10/2023]
Abstract
Recently, ferroelectric tunnel junctions (FTJs) have attracted considerable attention for potential applications in next-generation memories, owing to attractive advantages such as high-density of data storage, nondestructive readout, fast write/read access, and low energy consumption. Herein, recent progress regarding FTJ devices is reviewed with an emphasis on the modulation of the potential barrier. Electronic and ionic approaches that modulate the ferroelectric barriers themselves and/or induce extra barriers in electrodes or at ferroelectric/electrode interfaces are discussed with the enhancement of memory performance. Emerging physics, such as nanoscale ferroelectricity, resonant tunneling, and interfacial metallization, and the applications of FTJs in nonvolatile data storage, neuromorphic synapse emulation, and electromagnetic multistate memory are summarized. Finally, challenges and perspectives of FTJ devices are underlined.
Collapse
Affiliation(s)
- Zheng Wen
- College of Physics and Center for Marine Observation and Communications, Qingdao University, Qingdao, 266071, China
- Collaborative Innovation Center for Advanced Materials, Nanjing University, Nanjing, 210093, China
| | - Di Wu
- National Laboratory of Solid State Microstructures, Department of Materials Science and Engineering, Jiangsu Key Laboratory of Artificial Functional Materials and Collaborative Innovation Center for Advanced Materials, Nanjing University, Nanjing, 210093, China
| |
Collapse
|
24
|
Strain-induced room-temperature ferroelectricity in SrTiO 3 membranes. Nat Commun 2020; 11:3141. [PMID: 32561835 PMCID: PMC7305178 DOI: 10.1038/s41467-020-16912-3] [Citation(s) in RCA: 54] [Impact Index Per Article: 13.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 02/28/2020] [Accepted: 05/30/2020] [Indexed: 11/09/2022] Open
Abstract
Advances in complex oxide heteroepitaxy have highlighted the enormous potential of utilizing strain engineering via lattice mismatch to control ferroelectricity in thin-film heterostructures. This approach, however, lacks the ability to produce large and continuously variable strain states, thus limiting the potential for designing and tuning the desired properties of ferroelectric films. Here, we observe and explore dynamic strain-induced ferroelectricity in SrTiO3 by laminating freestanding oxide films onto a stretchable polymer substrate. Using a combination of scanning probe microscopy, optical second harmonic generation measurements, and atomistic modeling, we demonstrate robust room-temperature ferroelectricity in SrTiO3 with 2.0% uniaxial tensile strain, corroborated by the notable features of 180° ferroelectric domains and an extrapolated transition temperature of 400 K. Our work reveals the enormous potential of employing oxide membranes to create and enhance ferroelectricity in environmentally benign lead-free oxides, which hold great promise for applications ranging from non-volatile memories and microwave electronics. Previous approach lacks the ability to produce large and continuously tunable strain states due to the limited number of available substrates. Here, the authors demonstrate strain-induced ferroelectricity in SrTiO3 membranes by laminating freestanding SrTiO3 films onto a stretchable polymer.
Collapse
|
25
|
Guo R, You L, Lin W, Abdelsamie A, Shu X, Zhou G, Chen S, Liu L, Yan X, Wang J, Chen J. Continuously controllable photoconductance in freestanding BiFeO 3 by the macroscopic flexoelectric effect. Nat Commun 2020; 11:2571. [PMID: 32444607 PMCID: PMC7244550 DOI: 10.1038/s41467-020-16465-5] [Citation(s) in RCA: 26] [Impact Index Per Article: 6.5] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 10/07/2019] [Accepted: 05/05/2020] [Indexed: 11/09/2022] Open
Abstract
Flexoelectricity induced by the strain gradient is attracting much attention due to its potential applications in electronic devices. Here, by combining a tunable flexoelectric effect and the ferroelectric photovoltaic effect, we demonstrate the continuous tunability of photoconductance in BiFeO3 films. The BiFeO3 film epitaxially grown on SrTiO3 is transferred to a flexible substrate by dissolving a sacrificing layer. The tunable flexoelectricity is achieved by bending the flexible substrate which induces a nonuniform lattice distortion in BiFeO3 and thus influences the inversion asymmetry of the film. Multilevel conductance is thus realized through the coupling between flexoelectric and ferroelectric photovoltaic effect in freestanding BiFeO3. The strain gradient induced multilevel photoconductance shows very good reproducibility by bending the flexible BiFeO3 device. This control strategy offers an alternative degree of freedom to tailor the physical properties of flexible devices and thus provides a compelling toolbox for flexible materials in a wide range of applications.
Collapse
Affiliation(s)
- Rui Guo
- Department of Materials Science and Engineering, National University of Singapore, Singapore, 117575, Singapore
- College of Electron and Information Engineering, Hebei University, Baoding, 071002, China
| | - Lu You
- Jiangsu Key Laboratory of Thin Films, School of Physical Science and Technology, Soochow University, Suzhou, 215006, China
| | - Weinan Lin
- Department of Materials Science and Engineering, National University of Singapore, Singapore, 117575, Singapore
| | - Amr Abdelsamie
- Department of Materials Science and Engineering, Nanyang Technological University, Singapore, 639798, Singapore
| | - Xinyu Shu
- Department of Materials Science and Engineering, National University of Singapore, Singapore, 117575, Singapore
| | - Guowei Zhou
- Department of Materials Science and Engineering, National University of Singapore, Singapore, 117575, Singapore
| | - Shaohai Chen
- Department of Materials Science and Engineering, National University of Singapore, Singapore, 117575, Singapore
| | - Liang Liu
- Department of Materials Science and Engineering, National University of Singapore, Singapore, 117575, Singapore
| | - Xiaobing Yan
- College of Electron and Information Engineering, Hebei University, Baoding, 071002, China.
| | - Junling Wang
- Department of Materials Science and Engineering, Nanyang Technological University, Singapore, 639798, Singapore.
- Department of Physics, Southern University of Science and Technology, Shenzhen, 518055, China.
| | - Jingsheng Chen
- Department of Materials Science and Engineering, National University of Singapore, Singapore, 117575, Singapore.
| |
Collapse
|