Sr4Al2O7: A New Sacrificial Layer with High Water Dissolution Rate for the Synthesis of Freestanding Oxide Membranes

Freestanding perovskite oxide membranes have drawn great attention recently since they offer exceptional structural tunability and stacking ability, providing new opportunities in fundamental research and potential device applications in silicon-based semiconductor technology. Among different types of sacrificial layers, the (Ca, Sr, Ba)3Al2O6 compounds are most widely used since they can be dissolved in water and prepare high-quality perovskite oxide membranes with clean and sharp surfaces and interfaces; However, the typical transfer process takes a long time (up to hours) in obtaining millimeter-size freestanding membranes, let alone realize wafer-scale samples with high yield. Here, a new member of the SrO-Al2O3 family, Sr4Al2O7 is introduced, and its high dissolution rate, ≈10 times higher than that of Sr3Al2O6 is demonstrated. The high-dissolution-rate of Sr4Al2O7 is most likely related to the more discrete Al-O networks and higher concentration of water-soluble Sr-O species in this compound. This work significantly facilitates the preparation of freestanding membranes and sheds light on the integration of multifunctional perovskite oxides in practical electronic devices.

Ultra-Smooth Polishing of Single-Crystal Silicon Carbide by Pulsed-Ion-Beam Sputtering of Quantum-Dot Sacrificial Layers

Single-crystal silicon carbide has excellent electrical, mechanical, and chemical properties. However, due to its high hardness material properties, achieving high-precision manufacturing of single-crystal silicon carbide with an ultra-smooth surface is difficult. In this work, quantum dots were introduced as a sacrificial layer in polishing for pulsed-ion-beam sputtering of single-crystal SiC. The surface of single-crystal silicon carbide with a quantum-dot sacrificial layer was sputtered using a pulsed-ion beam and compared with the surface of single-crystal silicon carbide sputtered directly. The surface roughness evolution of single-crystal silicon carbide etched using a pulsed ion beam was studied, and the mechanism of sacrificial layer sputtering was analyzed theoretically. The results show that direct sputtering of single-crystal silicon carbide will deteriorate the surface quality. On the contrary, the surface roughness of single-crystal silicon carbide with a quantum-dot sacrificial layer added using pulsed-ion-beam sputtering was effectively suppressed, the surface shape accuracy of the Ø120 mm sample was converged to 7.63 nm RMS, and the roughness was reduced to 0.21 nm RMS. Therefore, the single-crystal silicon carbide with the quantum-dot sacrificial layer added via pulsed-ion-beam sputtering can effectively reduce the micro-morphology roughness phenomenon caused by ion-beam sputtering, and it is expected to realize the manufacture of a high-precision ultra-smooth surface of single-crystal silicon carbide.

The Use of Sacrificial Graphite-like Coating to Improve Fusion Efficiency of Copper in Selective Laser Melting

Thin and ultrathin carbon films reduce the laser energy required for copper powder fusion in selective laser melting (SLM). The low absorption of infrared (IR) radiation and its excellent thermal conductivity leads to an intricate combination of processing parameters to obtain high-quality printed parts in SLM. Two carbon-based sacrificial thin films were deposited onto copper to facilitate light absorption into the copper substrates. Graphite-like (3.5 µm) and ultra-thin (25 nm) amorphous carbon films were deposited by aerosol spraying and direct current magnetron sputtering, respectively. The melting was analyzed for several IR (1.06 µm) laser powers in order to observe the coating influence on the energy absorption. Scanning electron microscopy showed the topography and cross-section of the thermally affected area, electron backscatter diffraction provided the surface chemical composition of the films, and glow-discharge optical emission spectroscopy (GDOES) allowed the tracking of the in-deep chemical composition of the 3D printed parts using carbon film-covered copper. Ultra-thin films of a few tens of nanometers could reduce fusion energy by about 40%, enhanced by interferences phenomena. Despite the lower energy required, the melting maintained good quality and high wettability when using top carbon coatings. A copper part was SLM printed and associated with 25 nm of carbon deposition between two copper layers. The chemical composition analysis demonstrated that the carbon was intrinsically removed during the fusion process, preserving the high purity of the copper part.

Bendable Polycrystalline and Magnetic CoFe2O4 Membranes by Chemical Methods

The preparation and manipulation of crystalline yet bendable functional complex oxide membranes has been a long-standing issue for a myriad of applications, in particular, for flexible electronics. Here, we investigate the viability to prepare magnetic and crystalline CoFe₂O₄ (CFO) membranes by means of the Sr₃Al₂O₆ (SAO) sacrificial layer approach using chemical deposition techniques. Meticulous chemical and structural study of the SAO surface and SAO/CFO interface properties have allowed us to identify the formation of an amorphous SAO capping layer and carbonates upon air exposure, which dictate the crystalline quality of the subsequent CFO film growth. Vacuum annealing at 800 °C of SAO films promotes the elimination of the surface carbonates and the reconstruction of the SAO surface crystallinity. Ex-situ atomic layer deposition of CFO films at 250 °C on air-exposed SAO offers the opportunity to avoid high-temperature growth while achieving polycrystalline CFO films that can be successfully transferred to a polymer support preserving the magnetic properties under bending. Float on and transfer provides an alternative route to prepare freestanding and wrinkle-free CFO membrane films. The advances and challenges presented in this work are expected to help increase the capabilities to grow different oxide compositions and heterostructures of freestanding films and their range of functional properties.

Optimization of Sacrificial Layer Etching in Single-Crystal Silicon Nano-Films Transfer Printing for Heterogeneous Integration Application

As one of the important technologies in the field of heterogeneous integration, transfer technology has broad application prospects and unique technical advantages. This transfer technology includes the wet chemical etching of a sacrificial layer, such that silicon nano-film devices are released from the donor substrate and can be transferred. However, in the process of wet etching the SiO₂ sacrificial layer present underneath the single-crystal silicon nano-film by using the transfer technology, the etching is often incomplete, which seriously affects the efficiency and quality of the transfer and makes the device preparation impossible. This article analyzes the principle of incomplete etching, and compares the four factors that affect the etching process, including the size of Si nano-film on top of the sacrificial layer, the location of the anchor point, the shape of Si nano-film on top of the sacrificial layer, and the thickness of the sacrificial layer. Finally, the etching conditions are obtained to avoid the phenomenon of incomplete etching of the sacrificial layer, so that the transfer technology can be better applied in the field of heterogeneous integration. Additionally, Si MOSFETs (Metal-Oxide-Semiconductor Field Effect Transistors) on sapphire substrate were fabricated by using the optimized transfer technology.

Porous Membranes as Sacrificial Layers Enabling Conformal Chemical Vapor Deposition Involving Multiple Film-Forming Species

We propose a new, concise method for conformal chemical vapor deposition (CVD) using sacrificial layers (SLs) to fill three-dimensional features with microscopic pores. SLs are porous membranes (e.g., ceramic felts) that filter film-forming species having high sticking-probability (η). CVD processes with multiple film-forming species generally suffer from poor conformality due to preferential film deposition at the inlets of features by the high-η species, such as reactive intermediates. An SL traps such high-η species before they reach the target features and selectively supplies film-forming species with lower η (e.g., source precursors or stable intermediates) that enables conformal film deposition. Here the trapping efficiency of an SL was predicted and a procedure for designing an optimal SL was established. The procedure was demonstrated by CVD of silicon carbide (SiC) with multiple film-forming species of high-η species (η = 8.0 × 10^-3) and lower-η species (η = 5.9 × 10^-5 and 2.2 × 10^-7). The trapping of 99.2% of incident high-η species was achieved with an optimized SL, wherein the deposition rate (m/s) contribution by high-η species declined from 0.546 at the SL inlet to 0.014 at its outlet. Finally, using these optimized SLs, SiC-CVD filling of micron-scale trenches was demonstrated with an aspect-ratio of 16:1.

Fabrication and Characterization of Roll-to-Roll-Coated Cantilever-Structured Touch Sensors

It is common in the field of printed electronics that polydimethylsiloxane (PDMS) be used as a dielectric layer for capacitive sensors because of its high elasticity and restoration force. However, capacitive sensors with the PDMS dielectric layer have a lower sensitivity than those with an air-gap structure that has been fabricated by the conventional micro-electromechanical system (MEMS) process. This paper presents a productive method for fabricating air-gap structures for touch sensors by roll-to-roll slot-die coating. The air-gap is formed by coating and removing a sacrificial layer. Cantilever-structured capacitive touch sensors with an air-gap are fabricated as follows: First, the bottom electrode, the dielectric layer, and the poly(vinyl alcohol) (PVA) sacrificial layer are roll-to-roll slot-die-coated on a flexible substrate. In addition, the spacer layer is spin-coated. On the sacrificial and spacer layers, the top electrode and structural layer are formed by spin-coating. Then, the air-gap and cantilever structure are made by removing the sacrificial layer in water. The cantilever-structured sensor samples are examined in terms of sensitivity, hysteresis, and repeatability. In particular, the electrical performance of the samples is compared to those with the PDMS dielectric layer. Experimental results show that the cantilever-structured sensor samples have significantly higher sensitivity compared to those with the PDMS dielectric layer.

Cantilever Type Acceleration Sensors Made by Roll-to-Roll Slot-Die Coating

This paper presents the fabrication by means of roll-to-roll slot-die coating and characterization of air gap-based cantilever type capacitive acceleration sensors. As the mass of the sensor moves in the opposite direction of the acceleration, a capacitance change occurs. The sensor is designed to have a six layers structure with an air gap. Fabrication of the air gap and cantilever was enabled by coating and removing water-soluble PVA. The bottom electrode, the dielectric layer, and the sacrificial layer were formed using the roll-to-roll slot-die coating technique. The spacer, the top electrode, and the structural layer were formed by spin coating. Several kinds of experiments were conducted for characterization of the fabricated sensor samples. Experimental results show that accelerations of up to 3.6 g can be sensed with an average sensitivity of 0.00856 %/g.

Infinite Selectivity of Wet SiO2 Etching in Respect to Al

We propose and demonstrate an unconventional method suitable for releasing microelectromechanical systems devices containing an Al layer by wet etching using SiO2 as a sacrificial layer. We used 48% HF solution in combination with 20% oleum to keep the HF solution water-free and thus to prevent attack of the Al layer, achieving an outstanding etch rate of thermally grown SiO2 of ≈1 µm·min-1. We also verified that this etching solution only minimally affected the Al layer, as the chip immersion for ≈9 min increased the Al layer sheet resistance by only ≈7.6%. The proposed etching method was performed in an ordinary fume hood in a polytetrafluorethylene beaker at elevated temperature of ≈70 °C using water bath on a hotplate. It allowed removal of the SiO2 sacrificial layer in the presence of Al without the necessity of handling highly toxic HF gas.

Transfer of Epitaxial SrTiO3 Nanothick Layers Using Water-Soluble Sacrificial Perovskite Oxides

The integration of functional thin film materials with adaptable properties is essential for the development of new paradigms in information technology. Among them, complex oxides with perovskite structures have huge potential based on the particularly vast diversity of physical properties. Here, we demonstrate the possibility of transferring perovskite oxide materials like SrTiO₃ onto a silicon substrate using an environmentally friendly process at the nanoscale by means of a water-soluble perovskite sacrificial layer, SrVO₃. Based on in situ monitoring atomic force microscopy and photoemission studies, we reveal that the dissolution is initiated from a strontium-rich phase at the extreme surface of SrVO₃. The nanothick SrTiO₃-transferred layer onto silicon presents appropriate morphology and monocrystalline quality, providing a proof of concept for the integration and development of all-perovskite-oxide electronics or "oxitronics" onto any Si-based substrate.

Multi-Electrode Array with a Planar Surface for Cell Patterning by Microprinting

Multielectrode arrays (MEAs) are devices for non-invasive electrophysiological measurements of cell populations. This paper describes a novel fabrication method of MEAs with a fully planar surface. The surface of the insulation layer and the surface of the electrodes were on one plane; we named this device the planar MEA (pMEA). The main advantage of the pMEA is that it allows uniform contact between the pMEA surface and a substrate for positioning of microfluidic channels or microprinting of a cell adhesive layer. The fabrication of the pMEA is based on a low adhesive Au sacrificial peel-off layer. In divergence from conventional MEAs with recessed electrodes, the electrodes of the pMEA lead across the sloped edge of the insulation layer. To make this, the profile of the edge of the insulation layer was measured and the impedance of the planar electrodes was characterized. The impedance of the pMEA was comparable with the impedance of conventional MEA electrodes. The pMEA was tested for patterning HL-1 cells with a combination of imprinting fibronectin and coating by antifouling poly (l-lysine)-graft-poly(ethylene glycol) (PLL-g-PEG). The HL-1 cells remained patterned even at full confluency and presented spontaneous and synchronous beating activity.

Ultrafast and Chemically Stable Transfer of Au Nanomembrane Using a Water-Soluble NaCl Sacrificial Layer for Flexible Solar Cells

Large-scale industrial application of flexible device has called for development of transfer methods that deliver high yield and stability. Here, we show an ultrafast and chemically stable transfer method by using a water-soluble NaCl sacrificial layer. Extremely thin (10 nm) and large-area (4 in. wafer) free-standing Au nanomembranes (NMs) prepared on silicon substrate were successfully transferred to flexible PDMS substrate by dissolving the NaCl sacrificial layer. This transfer method enables highly transparent and electrically conductive Au NMs on PDMS substrate. To transfer a multilayered optoelectronic device, we fabricated flexible hydrogenated amorphous silicon (a-Si:H) solar cell on a glass substrate and transferred it to a PDMS substrate. There was no degradation of the electrical characteristic of the solar cell after the transfer. This approach enables the integration of high-temperature-processed a-Si:H solar cell onto low-temperature tolerant flexible polymer substrate without chemical contamination or damage.

Fabrication and Characterization of Roll-to-Roll Printed Air-Gap Touch Sensors

Although printed electronics technology has been recently employed in the production of various devices, its use for the fabrication of electronic devices with air-gap structures remains challenging. This paper presents a productive roll-to-roll printed electronics method for the fabrication of capacitive touch sensors with air-gap structures. Each layer of the sensor was fabricated by printing or coating. The bottom electrode, and the dielectric and sacrificial layers were roll-to-roll slot-die coated on a flexible substrate. The top electrode was formed by roll-to-roll gravure printing, while the structural layer was formed by spin-coating. In particular, the sacrificial layer was coated with polyvinyl alcohol (PVA) and removed in water to form an air-gap. The successful formation of the air-gap was verified by field emission scanning electron microscopy (FE-SEM). Electrical characteristics of the air-gap touch sensor samples were analyzed in terms of sensitivity, hysteresis, and repeatability. Experimental results showed that the proposed method can be suitable for the fabrication of air-gap sensors by using the roll-to-roll printed electronics technology.

Hard-Baked Photoresist as a Sacrificial Layer for Sub-180 °C Surface Micromachining Processes

This letter proposes a method for utilizing a positive photoresist, Shipley 1805, as a sacrificial layer for sub-180 °C fabrication process flows. In the proposed process, the sacrificial layer is etched at the end to release the structures using a relatively fast wet-etching technique employing resist remover and a critical point dryer (CPD). This technique allows high etching selectivity over a large number of materials, including silicon-based structural materials such as silicon-carbide, metals such as titanium and aluminum, and cured polymers. This selectivity, as well as the low processing thermal budget, introduces more flexibility in material selection for monolithic integration above complementary metal oxide semiconductor (CMOS) as well as flexible substrates.

Reactive Sputter Deposition of WO3/Ag/WO3 Film for Indium Tin Oxide (ITO)-Free Electrochromic Devices

Functioning both as electrochromic (EC) and transparent-conductive (TC) coatings, WO3/Ag/WO3 (WAW) trilayer film shows promising potential application for ITO-free electrochromic devices. Reports on thermal-evaporated WAW films revealed that these bifunctional WAW films have distinct EC characteristics; however, their poor adhesive property leads to rapid degradation of coloring-bleaching cycling. Here, we show that WAW film with improved EC durability can be prepared by reactive sputtering using metal targets. We find that, by introducing an ultrathin tungsten (W) sacrificial layer before the deposition of external WO3, the oxidation of silver, which leads to film insulation and apparent optical haze, can be effectively avoided. We also find that the luminous transmittance and sheet resistance were sensitive to the thicknesses of tungsten and silver layers. The optimized structure for TC coating was obtained to be WO3 (45 nm)/Ag (10 nm)/W (2 nm)/WO3 (45 nm) with a sheet resistance of 16.3 Ω/□ and a luminous transmittance of 73.7%. Such film exhibits compelling EC performance with decent luminous transmittance modulation ΔTlum of 29.5%, fast switching time (6.6 s for coloring and 15.9 s for bleaching time), and long-term cycling stability (2000 cycles) with an applied potential of ±1.2 V. Thicker external WO3 layer (45/10/2/100 nm) leads to larger modulation with maximum ΔTlum of 46.4%, but at the cost of significantly increasing the sheet resistance. The strategy of introducing ultrathin metal sacrificial layer to avoid silver oxidation could be extended to fabricating other oxide-Ag-oxide transparent electrodes via low-cost reactive sputtering.

Use of Amphoteric Copolymer Films as Sacrificial Layers for Constructing Free-Standing Layer-by-Layer Films

The present paper reports the use of an amphoteric copolymer, poly(diallylamine-co-maleic acid) (PDAMA), as a component of precursor layers (or sacrificial layers) for constructing free-standing layer-by-layer (LbL) films. A PDAMA-poly(styrenesulfonate) (PSS) film or PDAMA-poly(dimethyldiallylammonium chloride) (PDDA) film was coated on the surface of a quartz slide at pH 4.0 or 8.0, respectively, as a sacrificial layer that can be removed by changing the pH. The surface of the sacrificial layer was further covered with LbL films composed of poly(allylamine hydrochloride) (PAH) and PSS. The PAH-PSS films were released from the substrate upon immersing the film-coated quartz slide in acidic or neutral/basic solution, respectively, as a result of the pH-induced dissolution of the PDAMA-PDDA or PDAMA-PSS sacrificial layer. Thus, PDAMA-based sacrificial layers have been demonstrated to dissolve in both acidic and neutral solutions, depending on the type of counter polymer. The thicknesses of the sacrificial layers and released LbL films are crucial factors for constructing free-standing LbL films. The releasing kinetics also depended on the thickness of the crucial layers. The free-standing PAH-PSS films obtained were stable in water or in air in the dry state. PDAMA-based sacrificial layers may be useful in constructing free-standing LbL films containing biomolecules with limited pH stability.