1
|
Li X, Sun S, Wang N, Huang B, Li X. SnTe/SnSe Heterojunction Based Ammonia Sensors with Excellent Withstand to Ambient Humidities. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2024; 20:e2309831. [PMID: 38133510 DOI: 10.1002/smll.202309831] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/27/2023] [Revised: 12/11/2023] [Indexed: 12/23/2023]
Abstract
Non-invasive breath testing has gained increasing importance for early disease screening, spurring research into cheap sensors for detecting trace biomarkers such as ammonia. However, real-life deployment of ammonia sensors remains hindered by susceptibility to humidity-induced interference. The SnTe/SnSe heterojunction-based chemiresistive-type sensor demonstrates an excellent response/recovery to different concentrations of ammonia from 0.1 to 100 ppm at room temperature. The improved sensing properties of the heterojunctions-based sensors compared to single-phased SnTe or SnSe can be attributed to the stronger NH3 adsorptions, more Te vacancies, and hydrophobic surface induced by the formed SnTe/SnSe heterojunctions. The sensing mechanisms are investigated in detail by using in situ techniques such as diffuse reflectance Fourier transform infrared spectroscopy (DRIFTS), Kelvin probe, and a.c. impedance spectroscopy together with the Density-Function-Theory calculations. The formed heterojunctions boost the overall charge transfer efficiency between the ammonia and the sensing materials, thus leading to the desirable sensing features as well, with excellent resistance to ambient humidities.
Collapse
Affiliation(s)
- Xinlei Li
- School of Microelectronics, Dalian University of Technology, Dalian, Liaoning, 116024, P. R. China
| | - Shupeng Sun
- School of Microelectronics, Dalian University of Technology, Dalian, Liaoning, 116024, P. R. China
| | - Nan Wang
- School of Microelectronics, Dalian University of Technology, Dalian, Liaoning, 116024, P. R. China
| | - Baoyu Huang
- School of Microelectronics, Dalian University of Technology, Dalian, Liaoning, 116024, P. R. China
| | - Xiaogan Li
- School of Microelectronics, Dalian University of Technology, Dalian, Liaoning, 116024, P. R. China
| |
Collapse
|
2
|
Cho W, Kang YG, Cha J, Lee DHD, Kiem DH, Oh J, Joo Y, Yer S, Kim D, Park J, Kim C, Yang Y, Kim Y, Han MJ, Yang H. Singular Hall Response from a Correlated Ferromagnetic Flat Nodal-Line Semimetal. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024:e2402040. [PMID: 38798189 DOI: 10.1002/adma.202402040] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/07/2024] [Revised: 04/26/2024] [Indexed: 05/29/2024]
Abstract
Topological quantum phases are largely understood in weakly correlated systems, which have identified various quantum phenomena, such as the spin Hall effect, protected transport of helical fermions, and topological superconductivity. Robust ferromagnetic order in correlated topological materials particularly attracts attention, as it can provide a versatile platform for novel quantum devices. Here, a singular Hall response arising from a unique band structure of flat topological nodal lines in combination with electron correlation in a van der Waals ferromagnetic semimetal, Fe3GaTe2, with a high Curie temperature of Tc = 347 K is reported. High anomalous Hall conductivity violating the conventional scaling, resistivity upturn at low temperature, and a large Sommerfeld coefficient are observed in Fe3GaTe2, which implies heavy fermion features in this ferromagnetic topological material. The scanning tunneling microscopy, circular dichroism in angle-resolved photoemission spectroscopy, and theoretical calculations support the original electronic features of the material. Thus, low-dimensional Fe3GaTe2 with electronic correlation, topology, and room-temperature ferromagnetic order appears to be a promising candidate for robust quantum devices.
Collapse
Affiliation(s)
- Woohyun Cho
- Department of Physics, Korea Advanced Institute of Science and Technology (KAIST), Daejeon, 34141, South Korea
| | - Yoon-Gu Kang
- Department of Physics, Korea Advanced Institute of Science and Technology (KAIST), Daejeon, 34141, South Korea
| | - Jaehun Cha
- Department of Physics, Korea Advanced Institute of Science and Technology (KAIST), Daejeon, 34141, South Korea
| | - Dong Hyun David Lee
- Department of Physics, Korea Advanced Institute of Science and Technology (KAIST), Daejeon, 34141, South Korea
| | - Do Hoon Kiem
- Department of Physics, Korea Advanced Institute of Science and Technology (KAIST), Daejeon, 34141, South Korea
| | - Jaewhan Oh
- Department of Physics, Korea Advanced Institute of Science and Technology (KAIST), Daejeon, 34141, South Korea
| | - Yanggeun Joo
- Department of Physics, Korea Advanced Institute of Science and Technology (KAIST), Daejeon, 34141, South Korea
| | - Sangsu Yer
- Department of Physics, Korea Advanced Institute of Science and Technology (KAIST), Daejeon, 34141, South Korea
| | - Dohyun Kim
- Department of Physics, Korea Advanced Institute of Science and Technology (KAIST), Daejeon, 34141, South Korea
| | - Jongho Park
- Center for Correlated Electron Systems, Institute for Basic Science, Seoul, 08826, South Korea
- Department of Physics and Astronomy, Seoul National University, Seoul, 08826, South Korea
| | - Changyoung Kim
- Center for Correlated Electron Systems, Institute for Basic Science, Seoul, 08826, South Korea
- Department of Physics and Astronomy, Seoul National University, Seoul, 08826, South Korea
| | - Yongsoo Yang
- Department of Physics, Korea Advanced Institute of Science and Technology (KAIST), Daejeon, 34141, South Korea
- Graduate School of Semiconductor Technology, School of Electrical Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon, 34141, South Korea
| | - Yeongkwan Kim
- Department of Physics, Korea Advanced Institute of Science and Technology (KAIST), Daejeon, 34141, South Korea
| | - Myung Joon Han
- Department of Physics, Korea Advanced Institute of Science and Technology (KAIST), Daejeon, 34141, South Korea
| | - Heejun Yang
- Department of Physics, Korea Advanced Institute of Science and Technology (KAIST), Daejeon, 34141, South Korea
- Graduate School of Semiconductor Technology, School of Electrical Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon, 34141, South Korea
| |
Collapse
|
3
|
Cui F, He K, Wu S, Zhang H, Lu Y, Li Z, Hu J, Pan S, Zhu L, Huan Y, Li B, Duan X, Ji Q, Zhao X, Zhang Y. Stoichiometry-Tunable Synthesis and Magnetic Property Exploration of Two-Dimensional Chromium Selenides. ACS NANO 2024; 18:6276-6285. [PMID: 38354364 DOI: 10.1021/acsnano.3c10609] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 02/16/2024]
Abstract
Emerging 2D chromium-based dichalcogenides (CrXn (X = S, Se, Te; 0 < n ≤ 2)) have provoked enormous interests due to their abundant structures, intriguing electronic and magnetic properties, excellent environmental stability, and great application potentials in next generation electronics and spintronics devices. Achieving stoichiometry-controlled synthesis of 2D CrXn is of paramount significance for such envisioned investigations. Herein, we report the stoichiometry-controlled syntheses of 2D chromium selenide (CrxSey) materials (rhombohedral Cr2Se3 and monoclinic Cr3Se4) via a Cr-self-intercalation route by designing two typical chemical vapor deposition (CVD) strategies. We have also clarified the different growth mechanisms, distinct chemical compositions, and crystal structures of the two type materials. Intriguingly, we reveal that the ultrathin Cr2Se3 nanosheets exhibit a metallic feature, while the Cr3Se4 nanosheets present a transition from p-type semiconductor to metal upon increasing the flake thickness. Moreover, we have also uncovered the ferromagnetic properties of 2D Cr2Se3 and Cr3Se4 below ∼70 K and ∼270 K, respectively. Briefly, this research should promote the stoichiometric-ratio controllable syntheses of 2D magnetic materials, and the property explorations toward next generation spintronics and magneto-optoelectronics related applications.
Collapse
Affiliation(s)
- Fangfang Cui
- School of Materials Science and Engineering, Peking University, Beijing 100871, P. R. China
| | - Kun He
- College of Semiconductors (College of Integrated Circuits), School of Physics and Electronics, Hunan University, Changsha 410082, P. R. China
| | - Shengqiang Wu
- School of Materials Science and Engineering, Peking University, Beijing 100871, P. R. China
| | - Hongmei Zhang
- State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha 410082, P. R. China
| | - Yue Lu
- School of Physical Science and Technology, ShanghaiTech University, Shanghai 201210, P. R. China
| | - Zhenzhu Li
- Department of Materials, Imperial College London, London SW7 2AZ, U.K
| | - Jingyi Hu
- Academy for Advanced Interdisciplinary Studies and School of Materials Science and Engineering, Peking University, Beijing 100871, P. R. China
| | - Shuangyuan Pan
- School of Materials Science and Engineering, Peking University, Beijing 100871, P. R. China
| | - Lijie Zhu
- School of Materials Science and Engineering, Peking University, Beijing 100871, P. R. China
| | - Yahuan Huan
- School of Materials Science and Engineering, Peking University, Beijing 100871, P. R. China
| | - Bo Li
- College of Semiconductors (College of Integrated Circuits), School of Physics and Electronics, Hunan University, Changsha 410082, P. R. China
| | - Xidong Duan
- State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha 410082, P. R. China
| | - Qingqing Ji
- School of Physical Science and Technology, ShanghaiTech University, Shanghai 201210, P. R. China
| | - Xiaoxu Zhao
- School of Materials Science and Engineering, Peking University, Beijing 100871, P. R. China
| | - Yanfeng Zhang
- School of Materials Science and Engineering, Peking University, Beijing 100871, P. R. China
| |
Collapse
|
4
|
Pal K, Dey S, Das I. Giant magnetoresistance resulting from superzone gap in spin-frustrated rare-earth-based aluminide: DyFe 2Al 10. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2024; 36:215802. [PMID: 38373352 DOI: 10.1088/1361-648x/ad2aac] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/20/2023] [Accepted: 02/19/2024] [Indexed: 02/21/2024]
Abstract
The magnetic properties of orthorhombic aluminides have recently been the subject of investigation, revealing several intriguing phenomena within this class of materials. However, the exploration of their magnetic and electrical transport phenomena has remained somewhat limited. In this study, we delve into the magnetic and electrical transport characteristics of one such material from that group which is DyFe2Al10(DFA). Our findings go beyond classifying this material as a simple antiferromagnet; but it posses a short range ferromagnetic ordering apart from helical spin structure of Dy3+. It exhibits a metamagnetic transition and spin glass behavior below its Néel temperature (TN). Our analysis of electrical magnetotransport behavior indicates the emergence of an antiferromagnetic superzone gap, resulting in a significant enhancement in magnetoresistance effect. This discovery paves the way for a class of materials with complex interactions and notable magnetoresistance properties.
Collapse
Affiliation(s)
- Koustav Pal
- Saha Institute of Nuclear Physics, A CI of Homi Bhabha National Institute, Kolkata 700064, India
| | - Suman Dey
- Saha Institute of Nuclear Physics, A CI of Homi Bhabha National Institute, Kolkata 700064, India
| | - I Das
- Saha Institute of Nuclear Physics, A CI of Homi Bhabha National Institute, Kolkata 700064, India
| |
Collapse
|
5
|
Gu M, Rao AM, Zhou J, Lu B. Molecular modulation strategies for two-dimensional transition metal dichalcogenide-based high-performance electrodes for metal-ion batteries. Chem Sci 2024; 15:2323-2350. [PMID: 38362439 PMCID: PMC10866370 DOI: 10.1039/d3sc05768b] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 10/30/2023] [Accepted: 01/02/2024] [Indexed: 02/17/2024] Open
Abstract
In the past few decades, great efforts have been made to develop advanced transition metal dichalcogenide (TMD) materials as metal-ion battery electrodes. However, due to existing conversion reactions, they still suffer from structural aggregation and restacking, unsatisfactory cycling reversibility, and limited ion storage dynamics during electrochemical cycling. To address these issues, extensive research has focused on molecular modulation strategies to optimize the physical and chemical properties of TMDs, including phase engineering, defect engineering, interlayer spacing expansion, heteroatom doping, alloy engineering, and bond modulation. A timely summary of these strategies can help deepen the understanding of their basic mechanisms and serve as a reference for future research. This review provides a comprehensive summary of recent advances in molecular modulation strategies for TMDs. A series of challenges and opportunities in the research field are also outlined. The basic mechanisms of different modulation strategies and their specific influences on the electrochemical performance of TMDs are highlighted.
Collapse
Affiliation(s)
- Mingyuan Gu
- School of Physics and Electronics, Hunan University Changsha P. R. China
| | - Apparao M Rao
- Department of Physics and Astronomy, Clemson Nanomaterials Institute, Clemson University Clemson SC 29634 USA
| | - Jiang Zhou
- School of Materials Science and Engineering, Central South University Changsha 410083 P. R. China
| | - Bingan Lu
- School of Physics and Electronics, Hunan University Changsha P. R. China
| |
Collapse
|
6
|
Zhao Z, Fang Z, Han X, Yang S, Zhou C, Zeng Y, Zhang B, Li W, Wang Z, Zhang Y, Zhou J, Zhou J, Ye Y, Hou X, Zhao X, Gao S, Hou Y. A general thermodynamics-triggered competitive growth model to guide the synthesis of two-dimensional nonlayered materials. Nat Commun 2023; 14:958. [PMID: 36810290 PMCID: PMC9944324 DOI: 10.1038/s41467-023-36619-5] [Citation(s) in RCA: 3] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 10/29/2022] [Accepted: 02/08/2023] [Indexed: 02/23/2023] Open
Abstract
Two-dimensional (2D) nonlayered materials have recently provoked a surge of interest due to their abundant species and attractive properties with promising applications in catalysis, nanoelectronics, and spintronics. However, their 2D anisotropic growth still faces considerable challenges and lacks systematic theoretical guidance. Here, we propose a general thermodynamics-triggered competitive growth (TTCG) model providing a multivariate quantitative criterion to predict and guide 2D nonlayered materials growth. Based on this model, we design a universal hydrate-assisted chemical vapor deposition strategy for the controllable synthesis of various 2D nonlayered transition metal oxides. Four unique phases of iron oxides with distinct topological structures have also been selectively grown. More importantly, ultra-thin oxides display high-temperature magnetic ordering and large coercivity. MnxFeyCo3-x-yO4 alloy is also demonstrated to be a promising room-temperature magnetic semiconductor. Our work sheds light on the synthesis of 2D nonlayered materials and promotes their application for room-temperature spintronic devices.
Collapse
Affiliation(s)
- Zijing Zhao
- grid.11135.370000 0001 2256 9319School of Materials Science and Engineering, Beijing Key Laboratory for Magnetoelectric Materials and Devices, Beijing Innovation Center for Engineering Science and Advanced Technology, Peking University, Beijing, 100871 China ,grid.11135.370000 0001 2256 9319Academy for Advanced Interdisciplinary Studies, Peking University, Beijing, 100871 China
| | - Zhi Fang
- grid.11135.370000 0001 2256 9319School of Materials Science and Engineering, Beijing Key Laboratory for Magnetoelectric Materials and Devices, Beijing Innovation Center for Engineering Science and Advanced Technology, Peking University, Beijing, 100871 China
| | - Xiaocang Han
- grid.11135.370000 0001 2256 9319School of Materials Science and Engineering, Beijing Key Laboratory for Magnetoelectric Materials and Devices, Beijing Innovation Center for Engineering Science and Advanced Technology, Peking University, Beijing, 100871 China
| | - Shiqi Yang
- grid.11135.370000 0001 2256 9319State Key Laboratory for Mesoscopic Physics and Frontiers Science Center for Nano-Optoelectronics, School of Physics, Peking University, Beijing, 100871 China
| | - Cong Zhou
- grid.43169.390000 0001 0599 1243Center for Alloy Innovation and Design, State Key Laboratory for Mechanical Behavior of Materials, Xi’an Jiaotong University, Xi’an, 710049 China
| | - Yi Zeng
- grid.11135.370000 0001 2256 9319School of Materials Science and Engineering, Beijing Key Laboratory for Magnetoelectric Materials and Devices, Beijing Innovation Center for Engineering Science and Advanced Technology, Peking University, Beijing, 100871 China
| | - Biao Zhang
- grid.11135.370000 0001 2256 9319School of Materials Science and Engineering, Beijing Key Laboratory for Magnetoelectric Materials and Devices, Beijing Innovation Center for Engineering Science and Advanced Technology, Peking University, Beijing, 100871 China
| | - Wei Li
- grid.11135.370000 0001 2256 9319School of Materials Science and Engineering, Beijing Key Laboratory for Magnetoelectric Materials and Devices, Beijing Innovation Center for Engineering Science and Advanced Technology, Peking University, Beijing, 100871 China
| | - Zhan Wang
- grid.9227.e0000000119573309Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190 China
| | - Ying Zhang
- grid.9227.e0000000119573309Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190 China
| | - Jian Zhou
- grid.43169.390000 0001 0599 1243Center for Alloy Innovation and Design, State Key Laboratory for Mechanical Behavior of Materials, Xi’an Jiaotong University, Xi’an, 710049 China
| | - Jiadong Zhou
- grid.43555.320000 0000 8841 6246Centre for Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement, School of Physics, Beijing Institute of Technology, Beijing, 100081 China
| | - Yu Ye
- grid.11135.370000 0001 2256 9319State Key Laboratory for Mesoscopic Physics and Frontiers Science Center for Nano-Optoelectronics, School of Physics, Peking University, Beijing, 100871 China
| | - Xinmei Hou
- grid.69775.3a0000 0004 0369 0705Innovation Research Institute for Carbon Neutrality, University of Science and Technology Beijing, Beijing, 100083 China
| | - Xiaoxu Zhao
- School of Materials Science and Engineering, Beijing Key Laboratory for Magnetoelectric Materials and Devices, Beijing Innovation Center for Engineering Science and Advanced Technology, Peking University, Beijing, 100871, China.
| | - Song Gao
- grid.79703.3a0000 0004 1764 3838Institute of Spin-X Science and Technology, South China University of Technology, Guangzhou, 510641 China
| | - Yanglong Hou
- School of Materials Science and Engineering, Beijing Key Laboratory for Magnetoelectric Materials and Devices, Beijing Innovation Center for Engineering Science and Advanced Technology, Peking University, Beijing, 100871, China. .,Academy for Advanced Interdisciplinary Studies, Peking University, Beijing, 100871, China.
| |
Collapse
|
7
|
Guzman R, Ning S, Zhang R, Liu H, Ma Y, Zhang YY, Bao L, Yang H, Du S, Bosman M, Pennycook SJ, Gao HJ, Zhou W. Collective Magnetic Behavior in Vanadium Telluride Induced by Self-Intercalation. ACS NANO 2023; 17:2450-2459. [PMID: 36716185 DOI: 10.1021/acsnano.2c09762] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/18/2023]
Abstract
Self-intercalation of native magnetic atoms within the van der Waals (vdW) gap of layered two-dimensional (2D) materials provides a degree of freedom to manipulate magnetism in low-dimensional systems. Among various vdW magnets, the vanadium telluride is an interesting system to explore the interlayer order-disorder transition of magnetic impurities due to its flexibility in taking nonstoichiometric compositions. In this work, we combine high-resolution scanning transmission electron microscopy (STEM) analysis with density functional theory (DFT) calculations and magnetometry measurements, to unveil the local atomic structure and magnetic behavior of V-rich V1+xTe2 nanoplates with embedded V3Te4 nanoclusters grown by chemical vapor deposition (CVD). The segregation of V intercalations locally stabilizes the self-intercalated V3Te4 magnetic phase, which possesses a distorted 1T'-like monoclinic structure. This phase transition is controlled by the electron doping from the intercalant V ions. The magnetic hysteresis loops show that the nanoplates exhibit superparamagnetism, while the temperature-dependent magnetization curves evidence a collective superspin-glass magnetic behavior of the nanoclusters at low temperature. Using four-dimensional (4D) STEM diffraction imaging, we reveal the formation of collective diffuse magnetic domain structures within the sample under the high magnetic fields inside the electron microscope. Our results shed light on the studies of dilute magnetism at the 2D limit and on strategies for the manipulation of magnetism for spintronic applications.
Collapse
Affiliation(s)
- Roger Guzman
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing100049, People's Republic of China
| | - Shoucong Ning
- Department of Materials Science and Engineering, National University of Singapore, 117575Singapore, Singapore
| | - Ruizi Zhang
- Institute of Physics & University of Chinese Academy of Sciences, Chinese Academy of Science, Beijing100190, People's Republic of China
| | - Hongtao Liu
- Institute of Physics & University of Chinese Academy of Sciences, Chinese Academy of Science, Beijing100190, People's Republic of China
| | - Yinhang Ma
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing100049, People's Republic of China
| | - Yu-Yang Zhang
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing100049, People's Republic of China
| | - Lihong Bao
- Institute of Physics & University of Chinese Academy of Sciences, Chinese Academy of Science, Beijing100190, People's Republic of China
| | - Haitao Yang
- Institute of Physics & University of Chinese Academy of Sciences, Chinese Academy of Science, Beijing100190, People's Republic of China
| | - Shixuan Du
- Institute of Physics & University of Chinese Academy of Sciences, Chinese Academy of Science, Beijing100190, People's Republic of China
| | - Michel Bosman
- Department of Materials Science and Engineering, National University of Singapore, 117575Singapore, Singapore
| | - Stephen J Pennycook
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing100049, People's Republic of China
| | - Hong-Jun Gao
- Institute of Physics & University of Chinese Academy of Sciences, Chinese Academy of Science, Beijing100190, People's Republic of China
| | - Wu Zhou
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing100049, People's Republic of China
- CAS Centre for Excellence in Topological Quantum Computation, University of Chinese Academy of Sciences, Beijing100049, People's Republic of China
| |
Collapse
|
8
|
Song S, Oh I, Jang S, Yoon A, Han J, Lee Z, Yoo JW, Kwon SY. Air-stable van der Waals PtTe 2 conductors with high current-carrying capacity and strong spin-orbit interaction. iScience 2022; 25:105346. [PMID: 36345340 PMCID: PMC9636052 DOI: 10.1016/j.isci.2022.105346] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 06/08/2022] [Revised: 09/26/2022] [Accepted: 10/11/2022] [Indexed: 11/09/2022] Open
Abstract
High-performance van der Waals (vdW) integrated electronics and spintronics require reliable current-carrying capacity. However, it is challenging to achieve high current density and air-stable performance using vdW metals owing to the fast electrical breakdown triggered by defects or oxidation. Here, we report that spin-orbit interacted synthetic PtTe2 layers exhibit significant electrical reliability and robustness in ambient air. The 4-nm-thick PtTe2 synthesized at a low temperature (∼400°C) shows intrinsic metallic transport behavior and a weak antilocalization effect attributed to the strong spin-orbit scattering. Remarkably, PtTe2 sustains a high current density approaching ≈31.5 MA cm−2, which is the highest value among electrical interconnect candidates under oxygen exposure. Electrical failure is caused by the Joule heating of PtTe2 rather than defect-induced electromigration, which was achievable by the native TeOx passivation. The high-quality growth of PtTe2 and the investigation of its transport behaviors lay out essential foundations for the development of emerging vdW spin-orbitronics. The synthesized PtTe2 had a self-passivated surface under exposure to air Magnetoconductance study proved the realization of a 2D confined quantum system PtTe2 sustained a remarkably high current density (∼31.5 MA cm−2) under air atmosphere The native TeOx passivation retarded the defect-induced electromigration of PtTe2
Collapse
Affiliation(s)
- Seunguk Song
- Departmet of Materials Science and Engineering & Center for Future Semiconductor Technology (FUST), Ulsan National Institute of Science and Technology (UNIST), Ulsan 44919, Republic of Korea
| | - Inseon Oh
- Departmet of Materials Science and Engineering & Center for Future Semiconductor Technology (FUST), Ulsan National Institute of Science and Technology (UNIST), Ulsan 44919, Republic of Korea
| | - Sora Jang
- Departmet of Materials Science and Engineering & Center for Future Semiconductor Technology (FUST), Ulsan National Institute of Science and Technology (UNIST), Ulsan 44919, Republic of Korea
| | - Aram Yoon
- Departmet of Materials Science and Engineering & Center for Future Semiconductor Technology (FUST), Ulsan National Institute of Science and Technology (UNIST), Ulsan 44919, Republic of Korea.,Center for Multidimensional Carbon Materials (CMCM), Institute for Basic Science (IBS), Ulsan 44919, Republic of Korea
| | - Juwon Han
- Departmet of Materials Science and Engineering & Center for Future Semiconductor Technology (FUST), Ulsan National Institute of Science and Technology (UNIST), Ulsan 44919, Republic of Korea
| | - Zonghoon Lee
- Departmet of Materials Science and Engineering & Center for Future Semiconductor Technology (FUST), Ulsan National Institute of Science and Technology (UNIST), Ulsan 44919, Republic of Korea.,Center for Multidimensional Carbon Materials (CMCM), Institute for Basic Science (IBS), Ulsan 44919, Republic of Korea
| | - Jung-Woo Yoo
- Departmet of Materials Science and Engineering & Center for Future Semiconductor Technology (FUST), Ulsan National Institute of Science and Technology (UNIST), Ulsan 44919, Republic of Korea
| | - Soon-Yong Kwon
- Departmet of Materials Science and Engineering & Center for Future Semiconductor Technology (FUST), Ulsan National Institute of Science and Technology (UNIST), Ulsan 44919, Republic of Korea
| |
Collapse
|
9
|
Husremović S, Groschner CK, Inzani K, Craig IM, Bustillo KC, Ercius P, Kazmierczak NP, Syndikus J, Van Winkle M, Aloni S, Taniguchi T, Watanabe K, Griffin SM, Bediako DK. Hard Ferromagnetism Down to the Thinnest Limit of Iron-Intercalated Tantalum Disulfide. J Am Chem Soc 2022; 144:12167-12176. [PMID: 35732002 DOI: 10.1021/jacs.2c02885] [Citation(s) in RCA: 10] [Impact Index Per Article: 5.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/30/2022]
Abstract
Two-dimensional (2D) magnetic crystals hold promise for miniaturized and ultralow power electronic devices that exploit spin manipulation. In these materials, large, controllable magnetocrystalline anisotropy (MCA) is a prerequisite for the stabilization and manipulation of long-range magnetic order. In known 2D magnetic crystals, relatively weak MCA typically results in soft ferromagnetism. Here, we demonstrate that ferromagnetic order persists down to the thinnest limit of FexTaS2 (Fe-intercalated bilayer 2H-TaS2) with giant coercivities up to 3 T. We prepare Fe-intercalated TaS2 by chemical intercalation of van der Waals-layered 2H-TaS2 crystals and perform variable-temperature transport, transmission electron microscopy, and confocal Raman spectroscopy measurements to shed new light on the coupled effects of dimensionality, degree of intercalation, and intercalant order/disorder on the hard ferromagnetic behavior of FexTaS2. More generally, we show that chemical intercalation gives access to a rich synthetic parameter space for low-dimensional magnets, in which magnetic properties can be tailored by the choice of the host material and intercalant identity/amount, in addition to the manifold distinctive degrees of freedom available in atomically thin, van der Waals crystals.
Collapse
Affiliation(s)
- Samra Husremović
- Department of Chemistry, University of California, Berkeley, California 94720, United States
| | - Catherine K Groschner
- Department of Chemistry, University of California, Berkeley, California 94720, United States
| | - Katherine Inzani
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720, United States.,The Molecular Foundry, Lawrence Berkeley National Laboratory, Berkeley, California 94720, United States
| | - Isaac M Craig
- Department of Chemistry, University of California, Berkeley, California 94720, United States
| | - Karen C Bustillo
- National Center for Electron Microscopy, Molecular Foundry, Lawrence Berkeley National Laboratory, Berkeley, California 94720, United States
| | - Peter Ercius
- National Center for Electron Microscopy, Molecular Foundry, Lawrence Berkeley National Laboratory, Berkeley, California 94720, United States
| | - Nathanael P Kazmierczak
- Department of Chemistry, University of California, Berkeley, California 94720, United States
| | - Jacob Syndikus
- Department of Chemistry, University of California, Berkeley, California 94720, United States
| | - Madeline Van Winkle
- Department of Chemistry, University of California, Berkeley, California 94720, United States
| | - Shaul Aloni
- The Molecular Foundry, Lawrence Berkeley National Laboratory, Berkeley, California 94720, United States
| | - Takashi Taniguchi
- Research Center for Functional Materials, National Institute for Materials Science, Tsukuba 305-0044, Japan
| | - Kenji Watanabe
- International Center for Materials Nanoarchitectonics, National Institute for Materials Science, Tsukuba 305-0044, Japan
| | - Sinéad M Griffin
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720, United States.,The Molecular Foundry, Lawrence Berkeley National Laboratory, Berkeley, California 94720, United States
| | - D Kwabena Bediako
- Department of Chemistry, University of California, Berkeley, California 94720, United States.,Chemical Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720, United States
| |
Collapse
|
10
|
Bao L, Huang L, Guo H, Gao HJ. Construction and physical properties of low-dimensional structures for nanoscale electronic devices. Phys Chem Chem Phys 2022; 24:9082-9117. [PMID: 35383791 DOI: 10.1039/d1cp05981e] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
Over the past decades, construction of nanoscale electronic devices with novel functionalities based on low-dimensional structures, such as single molecules and two-dimensional (2D) materials, has been rapidly developed. To investigate their intrinsic properties for versatile functionalities of nanoscale electronic devices, it is crucial to precisely control the structures and understand the physical properties of low-dimensional structures at the single atomic level. In this review, we provide a comprehensive overview of the construction of nanoelectronic devices based on single molecules and 2D materials and the investigation of their physical properties. For single molecules, we focus on the construction of single-molecule devices, such as molecular motors and molecular switches, by precisely controlling their self-assembled structures on metal substrates and charge transport properties. For 2D materials, we emphasize their spin-related electrical transport properties for spintronic device applications and the role that interfaces among 2D semiconductors, contact electrodes, and dielectric substrates play in the electrical performance of electronic, optoelectronic, and memory devices. Finally, we discuss the future research direction in this field, where we can expect a scientific breakthrough.
Collapse
Affiliation(s)
- Lihong Bao
- Institute of Physics & University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing, 100190, P. R. China. .,Songshan Lake Materials Laboratory, Dongguan, Guangdong, 523808, P. R. China
| | - Li Huang
- Institute of Physics & University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing, 100190, P. R. China.
| | - Hui Guo
- Institute of Physics & University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing, 100190, P. R. China.
| | - Hong-Jun Gao
- Institute of Physics & University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing, 100190, P. R. China. .,Songshan Lake Materials Laboratory, Dongguan, Guangdong, 523808, P. R. China
| |
Collapse
|
11
|
Zhao Z, Zhou J, Liu L, Liu N, Huang J, Zhang B, Li W, Zeng Y, Zhang T, Ji W, Yang T, Zhang Z, Li S, Hou Y. Two-Dimensional Room-Temperature Magnetic Nonstoichiometric Fe 7Se 8 Nanocrystals: Controllable Synthesis and Magnetic Behavior. NANO LETTERS 2022; 22:1242-1250. [PMID: 35061398 DOI: 10.1021/acs.nanolett.1c04403] [Citation(s) in RCA: 11] [Impact Index Per Article: 5.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
Two-dimensional (2D) magnetic materials have attracted significant attention for promising applications in energy-saving logic and robust memory devices. However, most 2D magnets discovered so far typically feature drawbacks for practical applications due to low critical temperatures. Herein, we synthesize ultrathin room-temperature (RT) magnetic Fe7Se8 nanoflakes via the space-confined chemical vapor deposition method. It is found that the appropriate supply and control of Se concentration in the reaction chamber is crucial for synthesizing high-quality nonstoichiometric Fe7Se8 nanoflakes. Cryogenic electrical and magnetic characterizations reveal the emergence of spin reorientation at ∼130 K and the survival of long-range magnetic ordering up to room temperature. The RT magnetic domain structures with different thicknesses are also uncovered by magnetic force microscopy. Moreover, theoretical calculations confirm the spin configuration and metallic band structure. The outstanding characteristics exhibited by Fe7Se8 nanoflakes, including RT magnetism, spin reorientation property, and good electrical conductivity, make them a potential candidate for RT spintronics.
Collapse
Affiliation(s)
- Zijing Zhao
- School of Materials Science and Engineering, Beijing Key Laboratory for Magnetoelectric Materials and Devices, Beijing Innovation Center for Engineering Science and Advanced Technology, Peking University, Beijing 100871, China
- Academy for Advanced Interdisciplinary Studies, Peking University, Beijing 100871, China
| | - Jian Zhou
- National Laboratory of Solid-State Microstructures and School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, China
| | - Luhao Liu
- National Laboratory of Solid-State Microstructures and School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, China
| | - Nanshu Liu
- Beijing Key Laboratory of Optoelectronic Functional Materials & Micro-Nano Devices, Department of Physics, Renmin University of China, Beijing 100872, China
| | - Jianqi Huang
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang 110016, China
| | - Biao Zhang
- School of Materials Science and Engineering, Beijing Key Laboratory for Magnetoelectric Materials and Devices, Beijing Innovation Center for Engineering Science and Advanced Technology, Peking University, Beijing 100871, China
| | - Wei Li
- School of Materials Science and Engineering, Beijing Key Laboratory for Magnetoelectric Materials and Devices, Beijing Innovation Center for Engineering Science and Advanced Technology, Peking University, Beijing 100871, China
| | - Yi Zeng
- School of Materials Science and Engineering, Beijing Key Laboratory for Magnetoelectric Materials and Devices, Beijing Innovation Center for Engineering Science and Advanced Technology, Peking University, Beijing 100871, China
| | - Teng Zhang
- School of Materials Science and Engineering, Beijing Key Laboratory for Magnetoelectric Materials and Devices, Beijing Innovation Center for Engineering Science and Advanced Technology, Peking University, Beijing 100871, China
| | - Wei Ji
- Beijing Key Laboratory of Optoelectronic Functional Materials & Micro-Nano Devices, Department of Physics, Renmin University of China, Beijing 100872, China
| | - Teng Yang
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang 110016, China
| | - Zhidong Zhang
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang 110016, China
| | - Songlin Li
- National Laboratory of Solid-State Microstructures and School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, China
| | - Yanglong Hou
- School of Materials Science and Engineering, Beijing Key Laboratory for Magnetoelectric Materials and Devices, Beijing Innovation Center for Engineering Science and Advanced Technology, Peking University, Beijing 100871, China
- Academy for Advanced Interdisciplinary Studies, Peking University, Beijing 100871, China
| |
Collapse
|
12
|
Zhang S, Wu H, Yang L, Zhang G, Xie Y, Zhang L, Zhang W, Chang H. Two-dimensional magnetic atomic crystals. MATERIALS HORIZONS 2022; 9:559-576. [PMID: 34779810 DOI: 10.1039/d1mh01155c] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
Two-dimensional (2D) magnetic crystals show many fascinating physical properties and have potential device applications in many fields. In this paper, the preparation, physical properties and device applications of 2D magnetic atomic crystals are reviewed. First, three preparation methods are presented, including chemical vapor deposition (CVD) molecular beam epitaxy (MBE) and single-crystal exfoliation. Second, physical properties of 2D magnetic atomic crystals, including ferromagnetism, antiferromagnetism, magnetic regulation and anomalous Hall effect are presented. Third, the application of 2D magnetic atomic crystals in heterojunctions reluctance and other aspects are briefly introduced. Finally, the future development direction and possible challenges of 2D magnetic atomic crystals are briefly addressed.
Collapse
Affiliation(s)
- Shanfei Zhang
- Center for Joining and Electronic Packaging, State Key Laboratory of Material Processing and Die & Mold Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology (HUST), Wuhan 430074, China.
- Institute for Quantum Science and Engineering, Huazhong University of Science and Technology (HUST), Wuhan 430074, China
| | - Hao Wu
- Center for Joining and Electronic Packaging, State Key Laboratory of Material Processing and Die & Mold Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology (HUST), Wuhan 430074, China.
- Institute for Quantum Science and Engineering, Huazhong University of Science and Technology (HUST), Wuhan 430074, China
| | - Li Yang
- Center for Joining and Electronic Packaging, State Key Laboratory of Material Processing and Die & Mold Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology (HUST), Wuhan 430074, China.
- Institute for Quantum Science and Engineering, Huazhong University of Science and Technology (HUST), Wuhan 430074, China
| | - Gaojie Zhang
- Center for Joining and Electronic Packaging, State Key Laboratory of Material Processing and Die & Mold Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology (HUST), Wuhan 430074, China.
- Institute for Quantum Science and Engineering, Huazhong University of Science and Technology (HUST), Wuhan 430074, China
| | - Yuanmiao Xie
- School of Microelectronics and Materials Engineering and School of Science, Guangxi University of Science and Technology, Liuzhou, China
| | - Liang Zhang
- School of Microelectronics and Materials Engineering and School of Science, Guangxi University of Science and Technology, Liuzhou, China
| | - Wenfeng Zhang
- Center for Joining and Electronic Packaging, State Key Laboratory of Material Processing and Die & Mold Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology (HUST), Wuhan 430074, China.
- Institute for Quantum Science and Engineering, Huazhong University of Science and Technology (HUST), Wuhan 430074, China
| | - Haixin Chang
- Center for Joining and Electronic Packaging, State Key Laboratory of Material Processing and Die & Mold Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology (HUST), Wuhan 430074, China.
- Institute for Quantum Science and Engineering, Huazhong University of Science and Technology (HUST), Wuhan 430074, China
| |
Collapse
|
13
|
Kondo effect and superconductivity in niobium with iron impurities. Sci Rep 2021; 11:14256. [PMID: 34244574 PMCID: PMC8270948 DOI: 10.1038/s41598-021-93731-6] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 04/22/2021] [Accepted: 06/21/2021] [Indexed: 11/08/2022] Open
Abstract
Kondo effect is an interesting phenomenon in quantum many-body physics. Niobium (Nb) is a conventional superconductor important for many superconducting device applications. It was long thought that the Kondo effect cannot be observed in Nb because the magnetic moment of a magnetic impurity, e.g. iron (Fe), would have been quenched in Nb. Here we report an observation of the Kondo effect in a Nb thin film structure. We found that by co-annealing Nb films with Fe in Argon gas at above 400 \documentclass[12pt]{minimal}
\usepackage{amsmath}
\usepackage{wasysym}
\usepackage{amsfonts}
\usepackage{amssymb}
\usepackage{amsbsy}
\usepackage{mathrsfs}
\usepackage{upgreek}
\setlength{\oddsidemargin}{-69pt}
\begin{document}$$^{\circ }$$\end{document}∘C for an hour, one can induce a Kondo effect in Nb. The Kondo effect is more pronounced at higher annealing temperature. The temperature dependence of the resistance suggests existence of remnant superconductivity at low temperatures even though the system never becomes superconducting. We find that the Hamann theory for the Kondo resistivity gives a satisfactory fitting to the result. The Hamann analysis gives a Kondo temperature for this Nb–Fe system at \documentclass[12pt]{minimal}
\usepackage{amsmath}
\usepackage{wasysym}
\usepackage{amsfonts}
\usepackage{amssymb}
\usepackage{amsbsy}
\usepackage{mathrsfs}
\usepackage{upgreek}
\setlength{\oddsidemargin}{-69pt}
\begin{document}$$\sim $$\end{document}∼ 16 K, well above the superconducting transition onset temperature 9 K of the starting Nb film, suggesting that the screening of the impurity spins is effective to allow Cooper pairs to form at low temperatures. We suggest that the mechanism by which the Fe impurities retain partially their magnetic moment is that they are located at the grain boundaries, not fully dissolved into the bcc lattice of Nb.
Collapse
|
14
|
Liu H, Xue Y. Van Der Waals Epitaxial Growth and Phase Transition of Layered FeSe 2 Nanocrystals. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2021; 33:e2008456. [PMID: 33759241 DOI: 10.1002/adma.202008456] [Citation(s) in RCA: 12] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/15/2020] [Revised: 02/01/2021] [Indexed: 06/12/2023]
Abstract
Layered iron chalcogenides (FeX, X = S, Se, Te) provide excellent platforms to study intertwined phase transitions, superconductivity, and magnetism. However, layered iron dichalcogenides (FeX2 , X = S, Se, Te) are rarely reported and their intrinsic properties are still unknown. Here, phase-pure layered iron diselenide (FeSe2 ) nanocrystals are epitaxially grown on mica by the sublimed-salt-assisted chemical vapor deposition method at atmospheric pressure. The layered atomic structure of FeSe2 is confirmed by X-ray diffraction and atomic-resolution scanning transmission electron microscopy. Electrical transport shows that the layered FeSe2 is a metal with high conductivity and a phase transition at ≈11 K. The phase transition manifests itself as a kink in the temperature-dependent resistivity, as well as anomalous magnetoresistance (MR) appearing around the phase-transition temperature. The MR changes from negative to positive, accompanied by large hysteresis near the phase-transition temperature upon cooling. The negative MR and hysteresis might originate from magnetic field suppression scattering of spin fluctuations and competition of magnetic interactions induced by the phase transition, respectively. Layered iron dichalcogenide will be potential candidate to explore novel quantum phenomena and other applications.
Collapse
Affiliation(s)
- Hongtao Liu
- College of Chemistry and Environmental Engineering, Shenzhen University, Shenzhen, 518052, P. R. China
- Department of Physics, The Hong Kong University of Science and Technology, Clear Water Bay, Hong Kong, P. R. China
| | - Yunzhou Xue
- College of Chemistry and Environmental Engineering, Shenzhen University, Shenzhen, 518052, P. R. China
| |
Collapse
|
15
|
Och M, Martin MB, Dlubak B, Seneor P, Mattevi C. Synthesis of emerging 2D layered magnetic materials. NANOSCALE 2021; 13:2157-2180. [PMID: 33475647 DOI: 10.1039/d0nr07867k] [Citation(s) in RCA: 6] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
van der Waals atomically thin magnetic materials have been recently discovered. They have attracted enormous attention as they present unique magnetic properties, holding potential to tailor spin-based device properties and enable next generation data storage and communication devices. To fully understand the magnetism in two-dimensions, the synthesis of 2D materials over large areas with precise thickness control has to be accomplished. Here, we review the recent advancements in the synthesis of these materials spanning from metal halides, transition metal dichalcogenides, metal phosphosulphides, to ternary metal tellurides. We initially discuss the emerging device concepts based on magnetic van der Waals materials including what has been achieved with graphene. We then review the state of the art of the synthesis of these materials and we discuss the potential routes to achieve the synthesis of wafer-scale atomically thin magnetic materials. We discuss the synthetic achievements in relation to the structural characteristics of the materials and we scrutinise the physical properties of the precursors in relation to the synthesis conditions. We highlight the challenges related to the synthesis of 2D magnets and we provide a perspective for possible advancement of available synthesis methods to respond to the need for scalable production and high materials quality.
Collapse
Affiliation(s)
- Mauro Och
- Department of Materials, Imperial College London, SW72AZ London, UK.
| | - Marie-Blandine Martin
- Unité Mixte de Physique, CNRS, Thales, Université Paris-Saclay, 91767 Palaiseau, France
| | - Bruno Dlubak
- Unité Mixte de Physique, CNRS, Thales, Université Paris-Saclay, 91767 Palaiseau, France
| | - Pierre Seneor
- Unité Mixte de Physique, CNRS, Thales, Université Paris-Saclay, 91767 Palaiseau, France
| | - Cecilia Mattevi
- Department of Materials, Imperial College London, SW72AZ London, UK.
| |
Collapse
|
16
|
Shi J, Huan Y, Zhao X, Yang P, Hong M, Xie C, Pennycook S, Zhang Y. Two-Dimensional Metallic Vanadium Ditelluride as a High-Performance Electrode Material. ACS NANO 2021; 15:1858-1868. [PMID: 33445868 DOI: 10.1021/acsnano.0c10250] [Citation(s) in RCA: 13] [Impact Index Per Article: 4.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
Two-dimensional (2D) metallic transition-metal dichalcogenides (MTMDCs) are considered as ideal electrode materials for enhancing the device performances of 2D semiconducting transition-metal dichalcogenides, due to their similar atomic structures and complementary electronic properties. Vanadium ditelluride (VTe2) behaves as a fascinating material in MTMDCs family, presenting room-temperature ferromagnetism, charge density waves order, and topological property. However, its practical applications in universal electrode/energy-related fields remain unexplored. Herein, we achieved the direct synthesis of ultrathin, large-domain, and thickness-tunable 1T-VTe2 nanosheets on an easily available mica substrate by chemical vapor deposition (CVD). We further uncover that the CVD-derived 1T-VTe2 can serve as a high-performance electrode material thanks to its ultrahigh conductivity. Accordingly, a 6 times higher field-effect mobility (∼47.5 cm2 V-1 s-1) was achieved in 1T-VTe2-contacted monolayer MoS2 devices than that using a conventional Ti/Au electrode (∼8.1 cm2 V-1 s-1). Moreover, the CVD-synthesized 1T-VTe2 nanosheets are revealed to present excellent electrocatalytic activity for hydrogen evolution reaction. These results should propel the direct application of CVD-grown 2D MTMDCs as high-performance electrode materials in all 2D materials related devices.
Collapse
Affiliation(s)
- Jianping Shi
- The Institute for Advanced Studies, Wuhan University, Wuhan 430072, China
- Beijing National Laboratory for Molecular Sciences, Beijing 100190, China
| | - Yahuan Huan
- Department of Materials Science and Engineering, College of Engineering, Peking University, Beijing 100871, China
| | - Xiaoxu Zhao
- Department of Materials Science and Engineering, National University of Singapore, Singapore 117575, Singapore
| | - Pengfei Yang
- Department of Materials Science and Engineering, College of Engineering, Peking University, Beijing 100871, China
| | - Min Hong
- Department of Materials Science and Engineering, College of Engineering, Peking University, Beijing 100871, China
| | - Chunyu Xie
- Department of Materials Science and Engineering, College of Engineering, Peking University, Beijing 100871, China
| | - Stephen Pennycook
- Department of Materials Science and Engineering, National University of Singapore, Singapore 117575, Singapore
| | - Yanfeng Zhang
- Department of Materials Science and Engineering, College of Engineering, Peking University, Beijing 100871, China
| |
Collapse
|
17
|
Ge J, Luo T, Lin Z, Shi J, Liu Y, Wang P, Zhang Y, Duan W, Wang J. Magnetic Moments Induced by Atomic Vacancies in Transition Metal Dichalcogenide Flakes. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2021; 33:e2005465. [PMID: 33306277 DOI: 10.1002/adma.202005465] [Citation(s) in RCA: 7] [Impact Index Per Article: 2.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/12/2020] [Revised: 11/19/2020] [Indexed: 06/12/2023]
Abstract
2D magnetism plays a key role in both fundamental physics and potential device applications. However, the instability of the discovered 2D magnetic materials has been one main obstacle in deep research and potential application of 2D magnetism. Here, a localized magnetic moment induced by Pt vacancies in air-stable type-II Dirac semimetal PtSe2 flakes is reported. The localized magnetic moments give rise to the Kondo effect, evidenced by logarithmic increment of resistance with decreasing temperature and isotropic negative longitudinal magnetoresistance. Additionally, the induced magnetic moment and Kondo temperature appear to depend on thickness in the thinner samples (<10 nm). The small magnetocrystalline anisotropy revealed by first-principles calculation indicates that the magnetic moments are randomly localized instead of long-range ordered. The findings demonstrate a new means to induce magnetism in 2D non-magnetic materials.
Collapse
Affiliation(s)
- Jun Ge
- International Center for Quantum Materials, School of Physics, Peking University, Beijing, 100871, China
| | - Tianchuang Luo
- International Center for Quantum Materials, School of Physics, Peking University, Beijing, 100871, China
| | - Zuzhang Lin
- State Key Laboratory of Low Dimensional Quantum Physics, Department of Physics, Tsinghua University, Beijing, 100084, China
- Institute for Advanced Study, Tsinghua University, Beijing, 100084, China
| | - Jianping Shi
- The Institute for Advanced Studies, Wuhan University, Wuhan, 430072, China
| | - Yanzhao Liu
- International Center for Quantum Materials, School of Physics, Peking University, Beijing, 100871, China
| | - Pinyuan Wang
- International Center for Quantum Materials, School of Physics, Peking University, Beijing, 100871, China
| | - Yanfeng Zhang
- Department of Materials Science and Engineering, College of Engineering, Peking University, Beijing, 100871, China
| | - Wenhui Duan
- State Key Laboratory of Low Dimensional Quantum Physics, Department of Physics, Tsinghua University, Beijing, 100084, China
- Institute for Advanced Study, Tsinghua University, Beijing, 100084, China
| | - Jian Wang
- International Center for Quantum Materials, School of Physics, Peking University, Beijing, 100871, China
- State Key Laboratory of Low Dimensional Quantum Physics, Department of Physics, Tsinghua University, Beijing, 100084, China
- CAS Center for Excellence in Topological Quantum Computation, University of Chinese Academy of Sciences, Beijing, 100190, China
- Beijing Academy of Quantum Information Sciences, Beijing, 100193, China
| |
Collapse
|
18
|
Yang S, Zhang T, Jiang C. van der Waals Magnets: Material Family, Detection and Modulation of Magnetism, and Perspective in Spintronics. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2021; 8:2002488. [PMID: 33511010 PMCID: PMC7816723 DOI: 10.1002/advs.202002488] [Citation(s) in RCA: 16] [Impact Index Per Article: 5.3] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/30/2020] [Revised: 09/09/2020] [Indexed: 06/02/2023]
Abstract
van der Waals (vdW) materials exhibit great potential in spintronics, arising from their excellent spin transportation, large spin-orbit coupling, and high-quality interfaces. The recent discovery of intrinsic vdW antiferromagnets and ferromagnets has laid the foundation for the construction of all-vdW spintronic devices, and enables the study of low-dimensional magnetism, which is of both technical and scientific significance. In this review, several representative families of vdW magnets are introduced, followed by a comprehensive summary of the methods utilized in reading out the magnetic states of vdW magnets. Thereafter, it is shown that various electrical, mechanical, and chemical approaches are employed to modulate the magnetism of vdW magnets. Finally, the perspective of vdW magnets in spintronics is discussed and an outlook of future development direction in this field is also proposed.
Collapse
Affiliation(s)
- Shengxue Yang
- School of Materials Science and EngineeringBeihang UniversityBeijing100191P. R. China
| | - Tianle Zhang
- School of Materials Science and EngineeringBeihang UniversityBeijing100191P. R. China
| | - Chengbao Jiang
- School of Materials Science and EngineeringBeihang UniversityBeijing100191P. R. China
| |
Collapse
|
19
|
Chen S, Liu H, Chen F, Zhou K, Xue Y. Synthesis, Transfer, and Properties of Layered FeTe 2 Nanocrystals. ACS NANO 2020; 14:11473-11481. [PMID: 32885946 DOI: 10.1021/acsnano.0c03863] [Citation(s) in RCA: 16] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
Different from layered two-dimensional (2D) transition metal dichalcogenides (TMDs), iron dichalcogenides crystallize in the most common three-dimensional pyrite or marcasite structures. Layered iron dichalcogenides are rarely reported and little is known about their structures and properties. Here, layered hexagonal phase iron ditelluride FeTe2 (h-FeTe2) nanocrystals are grown on mica by atmospheric pressure chemical vapor deposition (APCVD) method and are fully characterized by various methods. Like other 2D layered TMD materials, the FeTe2 nanoflakes exhibit regular hexagon, half hexagon, or triangle shapes with a controllable thickness of 6-95 nm and lateral length from a few to tens of micrometers. A simple and effective method is used to transfer the FeTe2 nanoflakes from the mica substrate onto any other substrates without quality deterioration by using polystyrene (PS) as a support polymer, which can also be operated in ethanol or ethylene glycol in a glovebox to avoid contact with water and air. Temperature-dependent electrical transport demonstrates that the FeTe2 nanoflake is a semiconductor with a variable range hopping (VRH) conduction, and its nonsaturated linear magnetoresistance (MR) reaches up to 10.4% under magnetic field of 9 T at 2 K, both probably due to its structure disorders. No signature of magnetic ordering is observed down to 2 K. The CVD growth of this layered FeTe2 represents an addition to the extensive library of 2D materials, particularly iron chalcogenides or alloys. Synthesis, properties, and even doping of phase pure h-FeTe2 call for further study in the future.
Collapse
Affiliation(s)
- Songsong Chen
- College of Mechatronics and Control Engineering, Shenzhen University, Nan-hai Ave 3688, Shenzhen 518060, China
| | - Hongtao Liu
- Department of Physics, The Hong Kong University of Science and Technology, Clear Water Bay, Hong Kong, China
| | - Fuhai Chen
- College of Mechatronics and Control Engineering, Shenzhen University, Nan-hai Ave 3688, Shenzhen 518060, China
| | - Kai Zhou
- College of Mechatronics and Control Engineering, Shenzhen University, Nan-hai Ave 3688, Shenzhen 518060, China
| | - Yunzhou Xue
- College of Chemistry and Environmental Engineering, Shenzhen University, Shenzhen 518052, P.R. China
| |
Collapse
|
20
|
Lasek K, Coelho PM, Zberecki K, Xin Y, Kolekar SK, Li J, Batzill M. Molecular Beam Epitaxy of Transition Metal (Ti-, V-, and Cr-) Tellurides: From Monolayer Ditellurides to Multilayer Self-Intercalation Compounds. ACS NANO 2020; 14:8473-8484. [PMID: 32584543 DOI: 10.1021/acsnano.0c02712] [Citation(s) in RCA: 32] [Impact Index Per Article: 8.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/08/2023]
Abstract
Material growth by van der Waals epitaxy has the potential to isolate monolayer (ML) materials and synthesize ultrathin films not easily prepared by exfoliation or other growth methods. Here, the synthesis of the early transition metal (Ti, V, and Cr) tellurides by molecular beam epitaxy (MBE) in the mono- to few-layer regime is investigated. The layered ditellurides of these materials are known for their intriguing quantum- and layer dependent- properties. Here we show by a combination of in situ sample characterization and comparison with computational predictions that ML ditellurides with octahedral 1T structure are readily grown, but for multilayers, the transition metal dichalcogenide (TMDC) formation competes with self-intercalated compounds. CrTe2, a TMDC that is known to be metastable in bulk and easily decomposes into intercalation compounds, has been synthesized successfully in the ML regime at low growth temperatures. At elevated growth temperatures or for multilayers, only the intercalation compound, equivalent to a bulk Cr3Te4, could be obtained. ML VTe2 is more stable and can be synthesized at higher growth temperatures in the ML regime, but multilayers also convert to a bulk-equivalent V3Te4 compound. TiTe2 is the most stable of the TMDCs studied; nevertheless, a detailed analysis of multilayers also indicates the presence of intercalated metals. Computation suggests that the intercalation-induced distortion of the TMDC-layers is much reduced in Ti-telluride compared to V-, and Cr-telluride. This makes the identification of intercalated materials by scanning tunneling microscopy more challenging for Ti-telluride. The identification of self-intercalation compounds in MBE grown multilayer chalcogenides may explain observed lattice distortions in previously reported MBE grown early transition metal chalcogenides. On the other hand, these intercalation compounds in their ultrathin limit can be considered van der Waals materials in their own right. This class of materials is only accessible by direct growth methods but may be used as "building blocks" in MBE-grown van der Waals heterostructures. Controlling their growth is an important step for understanding and studying the properties of these materials.
Collapse
Affiliation(s)
- Kinga Lasek
- Department of Physics, University of South Florida, Tampa, Florida 33620, United States
| | - Paula Mariel Coelho
- Department of Physics, University of South Florida, Tampa, Florida 33620, United States
| | - Krzysztof Zberecki
- Faculty of Physics, Warsaw University of Technology, ul. Koszykowa 75, 00-662 Warsaw, Poland
| | - Yan Xin
- National High Magnetic Field Laboratory, Florida State University, Tallahassee, Florida 32310, United States
| | - Sadhu K Kolekar
- Department of Physics, University of South Florida, Tampa, Florida 33620, United States
| | - Jingfeng Li
- Department of Physics, University of South Florida, Tampa, Florida 33620, United States
| | - Matthias Batzill
- Department of Physics, University of South Florida, Tampa, Florida 33620, United States
| |
Collapse
|