Elucidating the Spatial Dynamics of Charge Carriers in Quasi-Two-Dimensional Perovskites

Identification the Role of Grain Boundaries in Polycrystalline Photovoltaics via Advanced Atomic Force Microscope

Atomicforce microscopy (AFM)-based scanning probing techniques, including Kelvinprobe force microscopy (KPFM) and conductive atomic force microscopy (C-AFM), have been widely applied to investigate thelocal electromagnetic, physical, or molecular characteristics of functional materials on a microscopic scale. The microscopic inhomogeneities of the electronic properties of polycrystalline photovoltaic materials can be examined by these advanced AFM techniques, which bridge the local properties of materials to overall device performance and guide the optimization of the photovoltaic devices. In this review, the critical roles of local optoelectronic heterogeneities, especially at grain interiors (GIs) and grain boundaries (GBs) of polycrystalline photovoltaic materials, including versatile polycrystalline silicon, inorganic compound materials, and emerging halide perovskites, studied by KPFM and C-AFM, are systematically identified. How the band alignment and electrical properties of GIs and GBs affect the carrier transport behavior are discussed from the respective of photovoltaic research. Further exploiting the potential of such AFM-based techniques upon a summary of their up-to-date applications in polycrystalline photovoltaic materials is beneficial to acomprehensive understanding of the design and manipulation principles of thenovel solar cells and facilitating the development of the next-generation photovoltaics and optoelectronics.

Rational Design of Ferroelectric 2D Perovskite for Improving the Efficiency of Flexible Perovskite Solar Cells Over 23

Despite the great progress of flexible perovskite solar cells (f-PSCs), it still faces several challenges during the homogeneous fabrication of high-quality perovskite thin films, and overcoming the insufficient exciton dissociation. To the ends, we rationally design the ferroelectric two-dimensional (2D) perovskite based on pyridine heterocyclic ring as the organic interlayer. We uncover that incorporation of the ferroelectric 2D material into 3D perovskite induces an increased built-in electric field (BEF), which enhances the exciton dissociation efficiency in the device. Moreover, the 2D seeds could assist the 3D crystallization by forming more homogeneous and highly-oriented perovskite crystals. As a result, an impressive power conversion efficiency (PCE) over 23 % has been achieved by the f-PSCs with outstanding ambient stability. Moreover, the piezo/ferroelectric 2D perovskite intrigues a decreased hole transport barriers at the ITO/perovskite interface under tensile stress, which opens new possibilities for developing highly-efficient f-PSCs.

Morphology and Luminescence Regulation for CsPbBr3 Perovskite Light-Emitting Diodes by Controlling Growth of Low-Dimensional Phases

At present, the high defect density and strong nonradiative recombination rate of all-inorganic cesium lead bromide (CsPbBr₃) perovskite light-emitting diodes (PeLEDs) seriously inhibit the improvement of their quantum efficiency. In this paper, the addition of a short-chain additive, diethylammonium bromide (DEABr), aims to control the generation of a quasi-2D large n-phase to optimize the surface morphology and construct two-dimensional/three-dimensional (2D/3D) heterojunction perovskite structures to enhance the EL efficiency of PeLEDs. Through Kelvin probe force microscopy (KPFM) characterization, we confirmed that the 2D phase grains with a low potential are locally formed on the surface of the perovskite film under the action of DEABr. The existence of the 2D phase effectively improved the surface morphology and suppressed surface defects. In addition, the in situ constructed 2D/3D heterojunction perovskite structure further increases the exciton radiative recombination rate and significantly improves the electroluminescent performance. By optimizing its doping concentration, the optimal all-inorganic PeLED displays a current efficiency (CE) of 30.3 cd A^-1, an external quantum efficiency (EQE) of 9.6%, and a maximum brightness of 32,500 cd m^-2. According to our results, the formation of 2D structures on the surface of the CsPbBr₃ film can improve surface morphology issues and optoelectronic properties of the film.

Synergistic passivation and stepped-dimensional perovskite analogs enable high-efficiency near-infrared light-emitting diodes

Formamidinium lead iodide (FAPbI₃) perovskites are promising emitters for near-infrared light-emitting diodes. However, their performance is still limited by defect-assisted nonradiative recombination and band offset-induced carrier aggregation at the interface. Herein, we introduce a couple of cadmium salts with acetate or halide anion into the FAPbI₃ perovskite precursors to synergistically passivate the material defects and optimize the device band structure. Particularly, the perovskite analogs, containing zero-dimensional formamidinium cadmium iodide, one-dimensional δ-FAPbI₃, two-dimensional FA₂FA_n-1Pb_nI_3n+1, and three-dimensional α-FAPbI₃, can be obtained in one pot and play a pivotal and positive role in energy transfer in the formamidinium iodide-rich lead-based perovskite films. As a result, the near-infrared FAPbI₃-based devices deliver a maximum external quantum efficiency of 24.1% together with substantially improved operational stability. Combining our findings on defect passivation and energy transfer, we also achieve near-infrared light communication with device twins of light emitting and unprecedented self-driven detection.

Superior External Quantum Efficiency of LEDs via Quasi-2D Perovskite Crystals Implanted with Phenethylammonium Acetate

The multiple quantum well structure of a quasi-two-dimensional (quasi-2D) perovskite leads to nonradiative Auger recombination (AR). This is due to high local carrier density in recombination centers, although the radiative recombination is improved by efficient energy transfer. In this study, we suppress the AR by introducing phenethylammonium acetate (PEAAc) into the quasi-2D PEA₂Cs_n-1Pb_nBr_3n+1 perovskite. The recombination centers of n ≥ 4 phases can be promoted because the COO^- preferentially coordinates with Pb²⁺_, inhibiting the fast formation of n = 1, 2, 3 phases with phenethylammonium anion (PEA⁺). Thus, the AR is suppressed due to the lower density of local charge carriers. To balance the AR suppression and decreasing binding energy in promoting the n ≥ 4 phases, the PEAAc:PEABr molar ratios are adjusted. At the optimal molar ratio, perovskite light-emitting diodes (PeLEDs) with a maximum luminescence of ∼29942 cd m^-2 and a maximum external quantum efficiency of ∼20.2% are achieved. These results confirm the most efficient PeLEDs based on PEA₂Cs_n-1Pb_nBr_3n+1 without passivation. Moreover, the efficiency roll off is significantly mitigated with a high threshold of over 3.51 mA/cm². This study develops high-efficiency PeLEDs with a low efficiency rolloff.