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Cao Y, Li Y, Zhu G, Li L, Lu G, Lim EG, Liu W, Liu Y, Zhao C, Wen Z. Advances in perovskite-based neuromorphic computing devices. NANOSCALE 2025; 17:12014-12047. [PMID: 40310388 DOI: 10.1039/d5nr00335k] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/02/2025]
Abstract
Neuromorphic computing devices, inspired by the architecture and functionality of the human brain, offer a promising solution to the limitations imposed by the von Neumann bottleneck on contemporary computing systems. Perovskite materials are widely used in the photosensitive layer of neuromorphic computing devices due to their high light absorption coefficient and excellent carrier mobility. Here, we summarise the latest research progress on neural morphology computing devices based on perovskite materials with different structures and summarise different application scenarios. Finally, we discussed the issues that still need to be addressed and looked forward to the future development of neural morphology calculations based on perovskite materials.
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Affiliation(s)
- Yixin Cao
- Department of Military Biomedical Engineering, Air Force Medical University, Xi'an 710032, China
| | - Yuanxi Li
- School of Advanced Technology, Xi'an Jiaotong-Liverpool University, Suzhou, China.
| | - Ganggui Zhu
- Department of Military Biomedical Engineering, Air Force Medical University, Xi'an 710032, China
| | - Linhui Li
- Department of Military Biomedical Engineering, Air Force Medical University, Xi'an 710032, China
| | - Guohua Lu
- Department of Military Biomedical Engineering, Air Force Medical University, Xi'an 710032, China
| | - Eng Gee Lim
- School of Advanced Technology, Xi'an Jiaotong-Liverpool University, Suzhou, China.
| | - Wenqing Liu
- Electrical Engineering and Electronics, University of Liverpool, Liverpool L69 3GJ, UK
| | - Yina Liu
- School of Advanced Technology, Xi'an Jiaotong-Liverpool University, Suzhou, China.
| | - Chun Zhao
- School of Advanced Technology, Xi'an Jiaotong-Liverpool University, Suzhou, China.
| | - Zhen Wen
- Institute of Functional Nano and Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials and Devices, Soochow University, Suzhou 215123, China.
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2
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Lee G, Kim YE, Kim H, Lee HK, Park JY, Oh S, Yoo H. Organic Synaptic Transistors and Printed Circuit Board Defect Inspection with Photonic Stimulation: A Novel Approach Using Oblique Angle Deposition. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2025:e2501997. [PMID: 40331564 DOI: 10.1002/smll.202501997] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/15/2025] [Revised: 04/19/2025] [Indexed: 05/08/2025]
Abstract
This study introduces a photonic stimulation-based synaptic transistor utilizing oblique angle deposition (OAD) of dinaphtho[2,3-b:2',3'-f]thieno[3,2-b]thiophene (DNTT). While OAD enables advanced nanostructures, its application to organic materials remains largely unexplored. Here, the electrical characteristics and photoinduced trap behavior of obliquely deposited DNTT transistors are systematically investigated, successfully replicating key synaptic functions. OAD-controlled grain size and spacing in the DNTT channel yield distinct performance metrics compared to conventional devices. The introduced trap regions enable stable synaptic behavior across diverse gate voltage (VG) conditions. By adjusting presynaptic photonic pulse intensity, duration, and repetition, a robust transition is achieved to long-term memory (LTM). The device further demonstrates reliable optoelectronic synaptic operation over 52 durability cycles. Concurrent photonic stimulation enables parallel potentiation-depression dynamics, enhancing processing speed and performance, highlighting its promise for next-generation neuromorphic computing. Its application is also showed in printed circuit board (PCB) defect inspection, successfully mimicking biological synapses under simultaneous photonic stimulation.
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Affiliation(s)
- Gyeongho Lee
- Semiconductor Total Solution Center, Korea Institute of Ceramic Engineering and Technology, 3321 Gyeongchung-daero, Icheon, 17303, Republic of Korea
- Department of Materials Science and Engineering, Korea University, 145 Anam-ro, Seoul, 02841, Republic of Korea
| | - Yeo Eun Kim
- Department of Semiconductor Engineering, Gachon University, 1342 Seongnam-daero, Seongnam, 13120, Republic of Korea
| | - Hyeonjung Kim
- Division of Electrical Engineering, Hanyang University ERICA, 55 Hanyangdaehak-ro, Ansan, 15588, Republic of Korea
| | - Han-Koo Lee
- Pohang Accelerator Laboratory, Pohang University of Science and Technology (POSTECH), 80 Jigok-ro, Pohang, 37673, Republic of Korea
| | - Jae Yeon Park
- Radiation Fusion Technology Research Division, Advanced Radiation Technology Institute (ARTI)/Korea Atomic Energy Research (KAERI), 29 Geum gu-gil, Jeongeup, 56212, Republic of Korea
| | - Seyong Oh
- Division of Electrical Engineering, Hanyang University ERICA, 55 Hanyangdaehak-ro, Ansan, 15588, Republic of Korea
| | - Hocheon Yoo
- Department of Electronic Engineering, Hanyang University, 222 Wangsimni-ro, Seoul, 04763, Republic of Korea
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3
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Hu C, Liang L, Yu J, Cheng L, Zhang N, Wang Y, Wei Y, Fu Y, Wang ZL, Sun Q. Neuromorphic Floating-Gate Memory Based on 2D Materials. CYBORG AND BIONIC SYSTEMS 2025; 6:0256. [PMID: 40264852 PMCID: PMC12012298 DOI: 10.34133/cbsystems.0256] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 01/03/2025] [Revised: 03/01/2025] [Accepted: 03/14/2025] [Indexed: 04/24/2025] Open
Abstract
In recent years, the rapid progression of artificial intelligence and the Internet of Things has led to a significant increase in the demand for advanced computing capabilities and more robust data storage solutions. In light of these challenges, neuromorphic computing, inspired by human brain's architecture and operation principle, has surfaced as a promising answer to the growing technological demands. This novel methodology emulates the biological synaptic mechanisms for information processing, enabling efficient data transmission and computation at the identical position. Two-dimensional (2D) materials, distinguished by their atomic thickness and tunable physical properties, exhibit substantial potential in emulating synaptic plasticity and find broad applications in neuromorphic computing. With respect to device architecture, memory devices based on floating-gate (FG) structures demonstrate robust data retention capabilities and have been widely used in the realm of flash memory. This review begins with a succinct introduction to 2D materials and FG transistors, followed by an in-depth discussion on remarkable research progress in the integration of 2D materials with FG transistors for applications in neuromorphic computing and memory. This paper offers a thorough review of the existing research landscape, encapsulating the notable progress in swiftly expanding field. In conclusion, it addresses the constraints encountered by FG transistors using 2D materials and delineates potential future trajectories for investigation and innovation within this area.
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Affiliation(s)
- Chao Hu
- School of Printing and Packaging Engineering,
Beijing Institute of Graphic Communication, Beijing 102627, P. R. China
- Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences, Beijing 101400, P. R. China
| | - Lijuan Liang
- School of Printing and Packaging Engineering,
Beijing Institute of Graphic Communication, Beijing 102627, P. R. China
| | - Jinran Yu
- Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences, Beijing 101400, P. R. China
| | - Liuqi Cheng
- Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences, Beijing 101400, P. R. China
| | - Nianjie Zhang
- School of Printing and Packaging Engineering,
Beijing Institute of Graphic Communication, Beijing 102627, P. R. China
| | - Yifei Wang
- Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences, Beijing 101400, P. R. China
| | - Yichen Wei
- Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences, Beijing 101400, P. R. China
| | - Yixuan Fu
- School of Printing and Packaging Engineering,
Beijing Institute of Graphic Communication, Beijing 102627, P. R. China
| | - Zhong Lin Wang
- Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences, Beijing 101400, P. R. China
| | - Qijun Sun
- Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences, Beijing 101400, P. R. China
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Cheng Z, Wang T, Zhu J, He Y, Liu S, Li MY, Lu H, Wen X, Lee J, Liu S, Mao S. All-Inorganic Lead-Free Cs₂AgBiBr₆/ZnO Artificial Retina Synapse Based on Photoelectric Synergistic Dual-Mechanism for Neuromorphic Computing. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2025; 21:e2411129. [PMID: 39895204 DOI: 10.1002/smll.202411129] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/20/2024] [Revised: 01/23/2025] [Indexed: 02/04/2025]
Abstract
Adaptive learning capability of optoelectronic synaptic hardware holds promising application prospects in next generation artificial intelligence, and the development of biometric retina perception is sternly hampered by three crucial issues, including well-balance between excitatory and inhibitory, non-volatile multi-state storage, and optimal energy consumption. In this work, a novel Cs2AgBiBr6/ZnO non-volatile optoelectronic synapse is proposed and successfully programmed with optical excitatory and electronic inhibitory in the light of dual-mechanism: Lead-free perovskite Cs2AgBiBr6 guarantees abundant photogenerated carrier concentration, and the process of carrier capture and release occurs in ZnO layer, which can collaboratively modulate various synaptic plasticity behaviors depending on distinct stimulus. Consequently, multi-bit storage is attained with the dual-mechanism non-volatile memory (DNVM) as a function of consecutive light spikes. The energy consumption of the DNVM is 1.85 nJ at a single light spike, and an ultra-low one of 13.8 fJ is triggered with a single electrical pulse, which approximatively meets the requirement of the biological synaptic event energy consumption. The performance of the DNVM is further evaluated with the Pavlov's classical conditioning experiment and visual hardware system, offering an exciting paradigm for implementing on-chip adaptive visual perception and neuromorphic computing.
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Affiliation(s)
- Zhenpeng Cheng
- School of Physics and Mechanics, Wuhan University of Technology, Wuhan, 430070, China
| | - Tianle Wang
- School of Physics and Mechanics, Wuhan University of Technology, Wuhan, 430070, China
| | - Junyan Zhu
- School of Physics and Mechanics, Wuhan University of Technology, Wuhan, 430070, China
| | - Yaqi He
- School of Physics and Mechanics, Wuhan University of Technology, Wuhan, 430070, China
| | - Shijie Liu
- School of Physics and Mechanics, Wuhan University of Technology, Wuhan, 430070, China
| | - Ming-Yu Li
- School of Physics and Mechanics, Wuhan University of Technology, Wuhan, 430070, China
| | - Haifei Lu
- School of Physics and Mechanics, Wuhan University of Technology, Wuhan, 430070, China
| | - Xiaoyan Wen
- School of Physics and Mechanics, Wuhan University of Technology, Wuhan, 430070, China
| | - Jihoon Lee
- Department of Electronic Engineering, College of Electronics and Information, Kwangwoon University, Nowon-gu, Seoul, 01897, Republic of Korea
| | - Sisi Liu
- School of Physics and Mechanics, Wuhan University of Technology, Wuhan, 430070, China
| | - Sui Mao
- Institute of Hybrid Materials, National Center of International Research for Hybrid Materials Technology, National Base of International Science & Technology Cooperation, College of Materials Science and Engineering, Qingdao University, Qingdao, 266071, China
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5
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Wu H, Feng E, Yin H, Zhang Y, Chen G, Zhu B, Yue X, Zhang H, Liu Q, Xiong L. Biomaterials for neuroengineering: applications and challenges. Regen Biomater 2025; 12:rbae137. [PMID: 40007617 PMCID: PMC11855295 DOI: 10.1093/rb/rbae137] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 09/07/2024] [Revised: 10/19/2024] [Accepted: 11/03/2024] [Indexed: 02/27/2025] Open
Abstract
Neurological injuries and diseases are a leading cause of disability worldwide, underscoring the urgent need for effective therapies. Neural regaining and enhancement therapies are seen as the most promising strategies for restoring neural function, offering hope for individuals affected by these conditions. Despite their promise, the path from animal research to clinical application is fraught with challenges. Neuroengineering, particularly through the use of biomaterials, has emerged as a key field that is paving the way for innovative solutions to these challenges. It seeks to understand and treat neurological disorders, unravel the nature of consciousness, and explore the mechanisms of memory and the brain's relationship with behavior, offering solutions for neural tissue engineering, neural interfaces and targeted drug delivery systems. These biomaterials, including both natural and synthetic types, are designed to replicate the cellular environment of the brain, thereby facilitating neural repair. This review aims to provide a comprehensive overview for biomaterials in neuroengineering, highlighting their application in neural functional regaining and enhancement across both basic research and clinical practice. It covers recent developments in biomaterial-based products, including 2D to 3D bioprinted scaffolds for cell and organoid culture, brain-on-a-chip systems, biomimetic electrodes and brain-computer interfaces. It also explores artificial synapses and neural networks, discussing their applications in modeling neural microenvironments for repair and regeneration, neural modulation and manipulation and the integration of traditional Chinese medicine. This review serves as a comprehensive guide to the role of biomaterials in advancing neuroengineering solutions, providing insights into the ongoing efforts to bridge the gap between innovation and clinical application.
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Affiliation(s)
- Huanghui Wu
- Translational Research Institute of Brain and Brain-Like Intelligence, Shanghai Key Laboratory of Anesthesiology and Brain Functional Modulation, Clinical Research Center for Anesthesiology and Perioperative Medicine, Department of Anesthesiology and Perioperative Medicine, Shanghai Fourth People’s Hospital, School of Medicine, Tongji University, Shanghai 200434, China
| | - Enduo Feng
- Translational Research Institute of Brain and Brain-Like Intelligence, Shanghai Key Laboratory of Anesthesiology and Brain Functional Modulation, Clinical Research Center for Anesthesiology and Perioperative Medicine, Department of Anesthesiology and Perioperative Medicine, Shanghai Fourth People’s Hospital, School of Medicine, Tongji University, Shanghai 200434, China
| | - Huanxin Yin
- Translational Research Institute of Brain and Brain-Like Intelligence, Shanghai Key Laboratory of Anesthesiology and Brain Functional Modulation, Clinical Research Center for Anesthesiology and Perioperative Medicine, Department of Anesthesiology and Perioperative Medicine, Shanghai Fourth People’s Hospital, School of Medicine, Tongji University, Shanghai 200434, China
| | - Yuxin Zhang
- Translational Research Institute of Brain and Brain-Like Intelligence, Shanghai Key Laboratory of Anesthesiology and Brain Functional Modulation, Clinical Research Center for Anesthesiology and Perioperative Medicine, Department of Anesthesiology and Perioperative Medicine, Shanghai Fourth People’s Hospital, School of Medicine, Tongji University, Shanghai 200434, China
| | - Guozhong Chen
- Translational Research Institute of Brain and Brain-Like Intelligence, Shanghai Key Laboratory of Anesthesiology and Brain Functional Modulation, Clinical Research Center for Anesthesiology and Perioperative Medicine, Department of Anesthesiology and Perioperative Medicine, Shanghai Fourth People’s Hospital, School of Medicine, Tongji University, Shanghai 200434, China
| | - Beier Zhu
- Translational Research Institute of Brain and Brain-Like Intelligence, Shanghai Key Laboratory of Anesthesiology and Brain Functional Modulation, Clinical Research Center for Anesthesiology and Perioperative Medicine, Department of Anesthesiology and Perioperative Medicine, Shanghai Fourth People’s Hospital, School of Medicine, Tongji University, Shanghai 200434, China
| | - Xuezheng Yue
- School of Materials and Chemistry, University of Shanghai for Science and Technology, Shanghai 200093, China
| | - Haiguang Zhang
- Rapid Manufacturing Engineering Center, School of Mechatronical Engineering and Automation, Shanghai University, Shanghai 200444, China
- Shanghai Key Laboratory of Intelligent Manufacturing and Robotics, Shanghai University, Shanghai 200072, China
| | - Qiong Liu
- Translational Research Institute of Brain and Brain-Like Intelligence, Shanghai Key Laboratory of Anesthesiology and Brain Functional Modulation, Clinical Research Center for Anesthesiology and Perioperative Medicine, Department of Anesthesiology and Perioperative Medicine, Shanghai Fourth People’s Hospital, School of Medicine, Tongji University, Shanghai 200434, China
- State Key Laboratory of Molecular Engineering of Polymers, Department of Macromolecular Science, Fudan University, Shanghai 200438, China
| | - Lize Xiong
- Translational Research Institute of Brain and Brain-Like Intelligence, Shanghai Key Laboratory of Anesthesiology and Brain Functional Modulation, Clinical Research Center for Anesthesiology and Perioperative Medicine, Department of Anesthesiology and Perioperative Medicine, Shanghai Fourth People’s Hospital, School of Medicine, Tongji University, Shanghai 200434, China
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6
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Xu Y, He Y, Shan D, Zeng B, Ni QX. Emerging Artificial Synaptic Devices Based on Organic Semiconductors: Molecular Design, Structure and Applications. ACS APPLIED MATERIALS & INTERFACES 2025; 17:4290-4315. [PMID: 39785981 DOI: 10.1021/acsami.4c17455] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 01/12/2025]
Abstract
In modern computing, the Von Neumann architecture faces challenges such as the memory bottleneck, hindering efficient processing of large datasets and concurrent programs. Neuromorphic computing, inspired by the brain's architecture, emerges as a promising alternative, offering unparalleled computational power while consuming less energy. Artificial synaptic devices play a crucial role in this paradigm shift. Various material systems, from organic to inorganic, have been explored for neuromorphic devices, with organic materials attracting attention for their excellent photoelectric properties, diverse material choices, and versatile preparation methods. Organic semiconductors, in particular, offer advantages over transition-metal dichalcogenides, including ease of preparation and flexibility, making them suitable for large-area organic films. This review focuses on emerging artificial synaptic devices based on organic semiconductors, discussing different branches within the organic semiconductor material system, various fabrication methods, device structure designs, and applications of organic artificial synapse. Critical considerations and challenges for achieving truly human-like dynamic perception in artificial systems based on organic semiconductors are also outlined, reflecting the ongoing evolution of neuromorphic computing.
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Affiliation(s)
- Yunchao Xu
- The Affiliated Cancer Hospital of Xiangya School of Medicine, Central South University/Hunan Cancer Hospital, Changsha 410013, Hunan, People's Republic of China
| | - Yuan He
- China Center for Special Economic Zone Research, Shenzhen University, Shenzhen 518055, People's Republic of China
- College of Management, Shenzhen University, Shenzhen 518055, People's Republic of China
| | - Dongyong Shan
- Department of Oncology, The Second Xiangya Hospital of Central South University, Changsha 410013, Hunan, People's Republic of China
| | - Biao Zeng
- The Affiliated Cancer Hospital of Xiangya School of Medicine, Central South University/Hunan Cancer Hospital, Changsha 410013, Hunan, People's Republic of China
| | - Qian-Xi Ni
- The Affiliated Cancer Hospital of Xiangya School of Medicine, Central South University/Hunan Cancer Hospital, Changsha 410013, Hunan, People's Republic of China
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7
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Jeong BH, Lee J, Ku M, Lee J, Kim D, Ham S, Lee KT, Kim YB, Park HJ. RGB Color-Discriminable Photonic Synapse for Neuromorphic Vision System. NANO-MICRO LETTERS 2024; 17:78. [PMID: 39612009 DOI: 10.1007/s40820-024-01579-y] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/06/2024] [Accepted: 10/23/2024] [Indexed: 11/30/2024]
Abstract
To emulate the functionality of the human retina and achieve a neuromorphic visual system, the development of a photonic synapse capable of multispectral color discrimination is of paramount importance. However, attaining robust color discrimination across a wide intensity range, even irrespective of medium limitations in the channel layer, poses a significant challenge. Here, we propose an approach that can bestow the color-discriminating synaptic functionality upon a three-terminal transistor flash memory even with enhanced discriminating capabilities. By incorporating the strong induced dipole moment effect at the excitation, modulated by the wavelength of the incident light, into the floating gate, we achieve outstanding RGB color-discriminating synaptic functionality within a remarkable intensity range spanning from 0.05 to 40 mW cm-2. This approach is not restricted to a specific medium in the channel layer, thereby enhancing its applicability. The effectiveness of this color-discriminating synaptic functionality is demonstrated through visual pre-processing of a photonic synapse array, involving the differentiation of RGB channels and the enhancement of image contrast with noise reduction. Consequently, a convolutional neural network can achieve an impressive inference accuracy of over 94% for Canadian-Institute-For-Advanced-Research-10 colorful image recognition task after the pre-processing. Our proposed approach offers a promising solution for achieving robust and versatile RGB color discrimination in photonic synapses, enabling significant advancements in artificial visual systems.
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Affiliation(s)
- Bum Ho Jeong
- Department of Organic and Nano Engineering & Human-Tech Convergence Program, Hanyang University, Seoul, 04763, Korea
| | - Jaewon Lee
- Department of Organic and Nano Engineering & Human-Tech Convergence Program, Hanyang University, Seoul, 04763, Korea
| | - Miju Ku
- Department of Mechanical Engineering, Hanyang University, Seoul, 04763, Korea
| | - Jongmin Lee
- Department of Organic and Nano Engineering & Human-Tech Convergence Program, Hanyang University, Seoul, 04763, Korea
| | - Dohyung Kim
- Department of Organic and Nano Engineering & Human-Tech Convergence Program, Hanyang University, Seoul, 04763, Korea
| | - Seokhyun Ham
- Department of Organic and Nano Engineering & Human-Tech Convergence Program, Hanyang University, Seoul, 04763, Korea
| | - Kyu-Tae Lee
- Department of Physics, Inha University, Incheon, 22212, Korea.
| | - Young-Beom Kim
- Department of Mechanical Engineering, Hanyang University, Seoul, 04763, Korea.
| | - Hui Joon Park
- Department of Organic and Nano Engineering & Human-Tech Convergence Program, Hanyang University, Seoul, 04763, Korea.
- Department of Semiconductor Engineering, Hanyang University, Seoul, 04763, Korea.
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8
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Qiu J, Li J, Li W, Wang K, Zhang S, Suk CH, Wu C, Zhou X, Zhang Y, Guo T, Kim TW. Advancements in Nanowire-Based Devices for Neuromorphic Computing: A Review. ACS NANO 2024; 18:31632-31659. [PMID: 39499041 DOI: 10.1021/acsnano.4c10170] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/07/2024]
Abstract
Neuromorphic computing, inspired by the highly interconnected and energy-efficient way the human brain processes information, has emerged as a promising technology for post-Moore's law era. This emerging technology can emulate the structures and the functions of the human brain and is expected to overcome the fundamental limitation of the current von Neumann computing architecture. Neuromorphic devices stand out as the key components of future electronic systems, exhibiting potential in shaping the landscape of neuromorphic computing. Especially, nanowire (NW)-based neuromorphic devices, with their advantages of high integration, high-speed computing, and low power consumption, have recently emerged as candidates for neuromorphic computing technology. Here, a critical overview of the current development and relevant research in the field of NW-based neuromorphic devices are provided. Neuromorphic devices based on different NW materials are comprehensively discussed, including Ag NW-based, organic NW-based, metal oxide NW-based, and semiconductor NW-based devices. Finally, as a foresight perspective, the potentials and the challenges of these NW-based neuromorphic devices for use as future brain-like electronics are discussed.
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Affiliation(s)
- Jiawen Qiu
- College of Physics and Information Engineering, Fuzhou University, Fuzhou 350108, China
| | - Junlong Li
- College of Physics and Information Engineering, Fuzhou University, Fuzhou 350108, China
| | - Wenhao Li
- College of Physics and Information Engineering, Fuzhou University, Fuzhou 350108, China
| | - Kun Wang
- College of Physics and Information Engineering, Fuzhou University, Fuzhou 350108, China
| | - Shuqian Zhang
- College of Physics and Information Engineering, Fuzhou University, Fuzhou 350108, China
| | - Chan Hee Suk
- Department of Electronic and Computer Engineering, Hanyang University, Seoul 04763, Republic of Korea
| | - Chaoxing Wu
- College of Physics and Information Engineering, Fuzhou University, Fuzhou 350108, China
- Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou 350108, China
| | - Xiongtu Zhou
- College of Physics and Information Engineering, Fuzhou University, Fuzhou 350108, China
- Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou 350108, China
| | - Yongai Zhang
- College of Physics and Information Engineering, Fuzhou University, Fuzhou 350108, China
- Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou 350108, China
| | - Tailiang Guo
- College of Physics and Information Engineering, Fuzhou University, Fuzhou 350108, China
- Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou 350108, China
| | - Tae Whan Kim
- Department of Electronic and Computer Engineering, Hanyang University, Seoul 04763, Republic of Korea
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9
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Li R, Yue Z, Luan H, Dong Y, Chen X, Gu M. Multimodal Artificial Synapses for Neuromorphic Application. RESEARCH (WASHINGTON, D.C.) 2024; 7:0427. [PMID: 39161534 PMCID: PMC11331013 DOI: 10.34133/research.0427] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 04/06/2024] [Accepted: 06/24/2024] [Indexed: 08/21/2024]
Abstract
The rapid development of neuromorphic computing has led to widespread investigation of artificial synapses. These synapses can perform parallel in-memory computing functions while transmitting signals, enabling low-energy and fast artificial intelligence. Robots are the most ideal endpoint for the application of artificial intelligence. In the human nervous system, there are different types of synapses for sensory input, allowing for signal preprocessing at the receiving end. Therefore, the development of anthropomorphic intelligent robots requires not only an artificial intelligence system as the brain but also the combination of multimodal artificial synapses for multisensory sensing, including visual, tactile, olfactory, auditory, and taste. This article reviews the working mechanisms of artificial synapses with different stimulation and response modalities, and presents their use in various neuromorphic tasks. We aim to provide researchers in this frontier field with a comprehensive understanding of multimodal artificial synapses.
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Affiliation(s)
- Runze Li
- School of Artificial Intelligence Science and Technology,
University of Shanghai for Science and Technology, Shanghai 200093, China
- Institute of Photonic Chips,
University of Shanghai for Science and Technology, Shanghai 200093, China
- Zhangjiang Laboratory, Pudong, Shanghai 201210, China
| | - Zengji Yue
- School of Artificial Intelligence Science and Technology,
University of Shanghai for Science and Technology, Shanghai 200093, China
| | - Haitao Luan
- School of Artificial Intelligence Science and Technology,
University of Shanghai for Science and Technology, Shanghai 200093, China
| | - Yibo Dong
- School of Artificial Intelligence Science and Technology,
University of Shanghai for Science and Technology, Shanghai 200093, China
| | - Xi Chen
- School of Artificial Intelligence Science and Technology,
University of Shanghai for Science and Technology, Shanghai 200093, China
| | - Min Gu
- School of Artificial Intelligence Science and Technology,
University of Shanghai for Science and Technology, Shanghai 200093, China
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10
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Li W, Li J, Mu T, Li J, Sun P, Dai M, Chen Y, Yang R, Chen Z, Wang Y, Wu Y, Wang S. The Nonvolatile Memory and Neuromorphic Simulation of ReS 2/h-BN/Graphene Floating Gate Devices Under Photoelectrical Hybrid Modulations. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2024; 20:e2311630. [PMID: 38470212 DOI: 10.1002/smll.202311630] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/13/2023] [Revised: 02/02/2024] [Indexed: 03/13/2024]
Abstract
The floating gate devices, as a kind of nonvolatile memory, obtain great application potential in logic-in-memory chips. The 2D materials have been greatly studied due to atomically flat surfaces, higher carrier mobility, and excellent photoelectrical response. The 2D ReS2 flake is an excellent candidate for channel materials due to thickness-independent direct bandgap and outstanding optoelectronic response. In this paper, the floating gate devices are prepared with the ReS2/h-BN/Gr heterojunction. It obtains superior nonvolatile electrical memory characteristics, including a higher memory window ratio (81.82%), tiny writing/erasing voltage (±8 V/2 ms), long retention (>1000 s), and stable endurance (>1000 times) as well as multiple memory states. Meanwhile, electrical writing and optical erasing are achieved by applying electrical and optical pulses, and multilevel storage can easily be achieved by regulating light pulse parameters. Finally, due to the ideal long-time potentiation/depression synaptic weights regulated by light pulses and electrical pulses, the convolutional neural network (CNN) constructed by ReS2/h-BN/Gr floating gate devices can achieve image recognition with an accuracy of up to 98.15% for MNIST dataset and 91.24% for Fashion-MNIST dataset. The research work adds a powerful option for 2D materials floating gate devices to apply to logic-in-memory chips and neuromorphic computing.
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Affiliation(s)
- Wei Li
- School of Microelectronics, Northwestern Polytechnical University, 127 West Youyi Road, Beilin District, Xi'an, Shaanxi, 710072, P. R. China
| | - Jiaying Li
- School of Microelectronics, Northwestern Polytechnical University, 127 West Youyi Road, Beilin District, Xi'an, Shaanxi, 710072, P. R. China
| | - Tianhui Mu
- School of Microelectronics, Northwestern Polytechnical University, 127 West Youyi Road, Beilin District, Xi'an, Shaanxi, 710072, P. R. China
| | - Jiayao Li
- School of Statistics, Wuhan University of Science and Technology, 947 Heping Avenue, Qingshan District, Wuhan, Hubei, 430081, P. R. China
| | - Pengcheng Sun
- School of Microelectronics, Northwestern Polytechnical University, 127 West Youyi Road, Beilin District, Xi'an, Shaanxi, 710072, P. R. China
| | - Mingjian Dai
- School of Microelectronics, Northwestern Polytechnical University, 127 West Youyi Road, Beilin District, Xi'an, Shaanxi, 710072, P. R. China
| | - Yuhua Chen
- School of Microelectronics, Northwestern Polytechnical University, 127 West Youyi Road, Beilin District, Xi'an, Shaanxi, 710072, P. R. China
| | - Ruijing Yang
- School of Microelectronics, Northwestern Polytechnical University, 127 West Youyi Road, Beilin District, Xi'an, Shaanxi, 710072, P. R. China
| | - Zhao Chen
- School of Microelectronics, Northwestern Polytechnical University, 127 West Youyi Road, Beilin District, Xi'an, Shaanxi, 710072, P. R. China
| | - Yucheng Wang
- School of Microelectronics, Northwestern Polytechnical University, 127 West Youyi Road, Beilin District, Xi'an, Shaanxi, 710072, P. R. China
| | - Yupan Wu
- School of Microelectronics, Northwestern Polytechnical University, 127 West Youyi Road, Beilin District, Xi'an, Shaanxi, 710072, P. R. China
| | - Shaoxi Wang
- School of Microelectronics, Northwestern Polytechnical University, 127 West Youyi Road, Beilin District, Xi'an, Shaanxi, 710072, P. R. China
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11
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Guo Z, Zhang J, Wang J, Liu X, Guo P, Sun T, Li L, Gao H, Xiong L, Huang J. Organic Synaptic Transistors with Environmentally Friendly Core/Shell Quantum Dots for Wavelength-Selective Memory and Neuromorphic Functions. NANO LETTERS 2024; 24:6139-6147. [PMID: 38722705 DOI: 10.1021/acs.nanolett.4c01606] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/23/2024]
Abstract
Organic transistors based on organic semiconductors together with quantum dots (QDs) are attracting more and more interest because both materials have excellent optoelectronic properties and solution processability. Electronics based on nontoxic QDs are highly desired considering the potential health risks but are limited by elevated surface defects, inadequate stability, and diminished luminescent efficiency. Herein, organic synaptic transistors based on environmentally friendly ZnSe/ZnS core/shell QDs with passivating surface defects are developed, exhibiting optically programmable and electrically erasable characteristics. The synaptic transistors feature linear multibit storage capability and wavelength-selective memory function with a retention time above 6000 s. Various neuromorphic applications, including memory enhancement, optical communication, and memory consolidation behaviors, are simulated. Utilizing an established neuromorphic model, accuracies of 92% and 91% are achieved in pattern recognition and complicated electrocardiogram signal processing, respectively. This research highlights the potential of environmentally friendly QDs in neuromorphic applications and health monitoring.
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Affiliation(s)
- Ziyi Guo
- School of Materials Science and Engineering, Tongji University, Shanghai 201804, P. R. China
| | - Junyao Zhang
- School of Materials Science and Engineering, Tongji University, Shanghai 201804, P. R. China
| | - Jun Wang
- School of Materials Science and Engineering, Tongji University, Shanghai 201804, P. R. China
| | - Xu Liu
- School of Materials Science and Engineering, Tongji University, Shanghai 201804, P. R. China
| | - Pu Guo
- School of Materials Science and Engineering, Tongji University, Shanghai 201804, P. R. China
| | - Tongrui Sun
- School of Materials Science and Engineering, Tongji University, Shanghai 201804, P. R. China
| | - Li Li
- School of Materials Science and Engineering, Tongji University, Shanghai 201804, P. R. China
| | - Huaiyu Gao
- School of Materials Science and Engineering, Tongji University, Shanghai 201804, P. R. China
| | - Lize Xiong
- Translational Research Institute of Brain and Brain-Like Intelligence, Shanghai Key Laboratory of Anesthesiology and Brain Functional Modulation, Shanghai Fourth People's Hospital Affiliated to Tongji University, Tongji University, Shanghai 200434, P. R. China
| | - Jia Huang
- School of Materials Science and Engineering, Tongji University, Shanghai 201804, P. R. China
- Translational Research Institute of Brain and Brain-Like Intelligence, Shanghai Key Laboratory of Anesthesiology and Brain Functional Modulation, Shanghai Fourth People's Hospital Affiliated to Tongji University, Tongji University, Shanghai 200434, P. R. China
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12
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Liu X, Dai S, Zhao W, Zhang J, Guo Z, Wu Y, Xu Y, Sun T, Li L, Guo P, Yang J, Hu H, Zhou J, Zhou P, Huang J. All-Photolithography Fabrication of Ion-Gated Flexible Organic Transistor Array for Multimode Neuromorphic Computing. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2312473. [PMID: 38385598 DOI: 10.1002/adma.202312473] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/21/2023] [Revised: 02/17/2024] [Indexed: 02/23/2024]
Abstract
Organic ion-gated transistors (OIGTs) demonstrate commendable performance for versatile neuromorphic systems. However, due to the fragility of organic materials to organic solvents, efficient and reliable all-photolithography methods for scalable manufacturing of high-density OIGT arrays with multimode neuromorphic functions are still missing, especially when all active layers are patterned in high-density. Here, a flexible high-density (9662 devices per cm2) OIGT array with high yield and minimal device-to-device variation is fabricated by a modified all-photolithography method. The unencapsulated flexible array can withstand 1000 times' bending at a radius of 1 mm, and 3 months' storage test in air, without obvious performance degradation. More interesting, the OIGTs can be configured between volatile and nonvolatile modes, suitable for constructing reservoir computing systems to achieve high accuracy in classifying handwritten digits with low training costs. This work proposes a promising design of organic and flexible electronics for affordable neuromorphic systems, encompassing both array and algorithm aspects.
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Affiliation(s)
- Xu Liu
- School of Materials Science and Engineering, Tongji University, Shanghai, 201804, P. R. China
| | - Shilei Dai
- School of Materials Science and Engineering, Tongji University, Shanghai, 201804, P. R. China
| | - Weidong Zhao
- School of Electronic and Information Engineering, Tongji University, Shanghai, 201804, P. R. China
| | - Junyao Zhang
- School of Materials Science and Engineering, Tongji University, Shanghai, 201804, P. R. China
| | - Ziyi Guo
- School of Materials Science and Engineering, Tongji University, Shanghai, 201804, P. R. China
| | - Yue Wu
- School of Materials Science and Engineering, Tongji University, Shanghai, 201804, P. R. China
| | - Yutong Xu
- School of Materials Science and Engineering, Tongji University, Shanghai, 201804, P. R. China
| | - Tongrui Sun
- School of Materials Science and Engineering, Tongji University, Shanghai, 201804, P. R. China
| | - Li Li
- School of Materials Science and Engineering, Tongji University, Shanghai, 201804, P. R. China
| | - Pu Guo
- School of Materials Science and Engineering, Tongji University, Shanghai, 201804, P. R. China
| | - Jie Yang
- School of Materials Science and Engineering, Tongji University, Shanghai, 201804, P. R. China
| | - Huawei Hu
- State Key Laboratory for Modification of Chemical Fibers and Polymer Materials, College of Materials Science and Engineering, Donghua University, Shanghai, 201620, P. R. China
| | - Junhe Zhou
- School of Electronic and Information Engineering, Tongji University, Shanghai, 201804, P. R. China
| | - Peng Zhou
- State Key Laboratory of ASIC and System, School of Microelectronics, Zhangjiang Fudan International Innovation Center, Fudan University, Shanghai, 200433, P. R. China
| | - Jia Huang
- School of Materials Science and Engineering, Tongji University, Shanghai, 201804, P. R. China
- National Key Laboratory of Autonomous Intelligent Unmanned Systems, Tongji University, Shanghai, 201804, P. R. China
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13
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Yang Y, Li Y, Chen D, Shen G. Multicolor vision perception of flexible optoelectronic synapse with high sensitivity for skin sunburn warning. MATERIALS HORIZONS 2024; 11:1934-1943. [PMID: 38345761 DOI: 10.1039/d3mh02154h] [Citation(s) in RCA: 9] [Impact Index Per Article: 9.0] [Reference Citation Analysis] [Abstract] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/23/2024]
Abstract
The development of flexible synaptic devices with multicolor signal response is important to exploit advanced artificial visual perception systems. The Sn vacancy-dominant memory and narrow gap characteristics of PEA2SnI4 make it suitable as a functional layer in ultraviolet-visible (UV-Vis) light-stimulated synaptic devices. However, such device tends to have high dark current and poor sensitivity, which is not conducive to subsequent information processing. Here, we proposed a self-powered flexible optoelectronic synapse based on PEA2SnI4 films. By introducing the electron transport layer (ETL), the dark current of the device is decreased by 5 orders of magnitude as compared to the Au/PEA2SnI4/ITO device, and the sensitivity is increased from 10.3% to 99.2% at 1.25 mW cm-2 light illumination (520 nm), indicating the vital role of the introduced ETL in promoting the separation of excitons in the interface and inhibiting the free carrier transfer. On this basis, the optoelectronic synaptic functions with integrated sensing, recognition, and memory features were realized. The array device exhibits UV-Vis light sensitivity and tunable synaptic plasticity, enabling its application for multicolor visual sensing and skin sunburn warning. This work provides an effective strategy for fabricating multicolor intelligent sensors and artificial vision systems, which facilitate the practical application of artificial optoelectronic synapses.
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Affiliation(s)
- Yaqian Yang
- School of Integrated Circuits and Electronics, Beijing Institute of Technology, Beijing 100081, China.
- School of Mathematics and Physics, University of Science and Technology Beijing, Beijing 100083, China
| | - Ying Li
- School of Integrated Circuits and Electronics, Beijing Institute of Technology, Beijing 100081, China.
| | - Di Chen
- School of Integrated Circuits and Electronics, Beijing Institute of Technology, Beijing 100081, China.
- School of Mathematics and Physics, University of Science and Technology Beijing, Beijing 100083, China
| | - Guozhen Shen
- School of Integrated Circuits and Electronics, Beijing Institute of Technology, Beijing 100081, China.
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14
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Bag SP, Lee S, Song J, Kim J. Hydrogel-Gated FETs in Neuromorphic Computing to Mimic Biological Signal: A Review. BIOSENSORS 2024; 14:150. [PMID: 38534257 DOI: 10.3390/bios14030150] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/23/2024] [Revised: 03/13/2024] [Accepted: 03/13/2024] [Indexed: 03/28/2024]
Abstract
Hydrogel-gated synaptic transistors offer unique advantages, including biocompatibility, tunable electrical properties, being biodegradable, and having an ability to mimic biological synaptic plasticity. For processing massive data with ultralow power consumption due to high parallelism and human brain-like processing abilities, synaptic transistors have been widely considered for replacing von Neumann architecture-based traditional computers due to the parting of memory and control units. The crucial components mimic the complex biological signal, synaptic, and sensing systems. Hydrogel, as a gate dielectric, is the key factor for ionotropic devices owing to the excellent stability, ultra-high linearity, and extremely low operating voltage of the biodegradable and biocompatible polymers. Moreover, hydrogel exhibits ionotronic functions through a hybrid circuit of mobile ions and mobile electrons that can easily interface between machines and humans. To determine the high-efficiency neuromorphic chips, the development of synaptic devices based on organic field effect transistors (OFETs) with ultra-low power dissipation and very large-scale integration, including bio-friendly devices, is needed. This review highlights the latest advancements in neuromorphic computing by exploring synaptic transistor developments. Here, we focus on hydrogel-based ionic-gated three-terminal (3T) synaptic devices, their essential components, and their working principle, and summarize the essential neurodegenerative applications published recently. In addition, because hydrogel-gated FETs are the crucial members of neuromorphic devices in terms of cutting-edge synaptic progress and performances, the review will also summarize the biodegradable and biocompatible polymers with which such devices can be implemented. It is expected that neuromorphic devices might provide potential solutions for the future generation of interactive sensation, memory, and computation to facilitate the development of multimodal, large-scale, ultralow-power intelligent systems.
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Affiliation(s)
- Sankar Prasad Bag
- Department of Biomedical Engineering, College of Life Science and Biotechnology, Dongguk University, Seoul 04620, Republic of Korea
| | - Suyoung Lee
- Department of Biomedical Engineering, College of Life Science and Biotechnology, Dongguk University, Seoul 04620, Republic of Korea
| | - Jaeyoon Song
- Department of Biomedical Engineering, College of Life Science and Biotechnology, Dongguk University, Seoul 04620, Republic of Korea
| | - Jinsink Kim
- Department of Biomedical Engineering, College of Life Science and Biotechnology, Dongguk University, Seoul 04620, Republic of Korea
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15
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Wang X, Ran Y, Li X, Qin X, Lu W, Zhu Y, Lu G. Bio-inspired artificial synaptic transistors: evolution from innovative basic units to system integration. MATERIALS HORIZONS 2023; 10:3269-3292. [PMID: 37312536 DOI: 10.1039/d3mh00216k] [Citation(s) in RCA: 10] [Impact Index Per Article: 5.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
The investigation of transistor-based artificial synapses in bioinspired information processing is undergoing booming exploration, and is the stable building block for brain-like computing. Given that the storage and computing separation architecture of von Neumann construction is not conducive to the current explosive information processing, it is critical to accelerate the connection between hardware systems and software simulations of intelligent synapses. So far, various works based on a transistor-based synaptic system successfully simulated functions similar to biological nerves in the human brain. However, the influence of the semiconductor and the device structural design on synaptic properties is still poorly linked. This review concretely emphasizes the recent advances in the novel structure design of semiconductor materials and devices used in synaptic transistors, not only from a single multifunction synaptic device but also to system application with various connected routes and related working mechanisms. Finally, crises and opportunities in transistor-based synaptic interconnection are discussed and predicted.
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Affiliation(s)
- Xin Wang
- Frontier Institute of Science and Technology, State Key Laboratory of Electrical Insulation and Power Equipment, Xi'an Jiaotong University, Xi'an 710054, P. R. China.
| | - Yixin Ran
- Frontier Institute of Science and Technology, State Key Laboratory of Electrical Insulation and Power Equipment, Xi'an Jiaotong University, Xi'an 710054, P. R. China.
| | - Xiaoqian Li
- Shandong Technology Center of Nanodevices and Integration, School of Microelectronics, Shandong University, Jinan, Shandong Province, 250100, P. R. China
| | - Xinsu Qin
- Frontier Institute of Science and Technology, State Key Laboratory of Electrical Insulation and Power Equipment, Xi'an Jiaotong University, Xi'an 710054, P. R. China.
| | - Wanlong Lu
- Frontier Institute of Science and Technology, State Key Laboratory of Electrical Insulation and Power Equipment, Xi'an Jiaotong University, Xi'an 710054, P. R. China.
| | - Yuanwei Zhu
- Frontier Institute of Science and Technology, State Key Laboratory of Electrical Insulation and Power Equipment, Xi'an Jiaotong University, Xi'an 710054, P. R. China.
| | - Guanghao Lu
- Frontier Institute of Science and Technology, State Key Laboratory of Electrical Insulation and Power Equipment, Xi'an Jiaotong University, Xi'an 710054, P. R. China.
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16
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He L, Yang Z, Wang Z, Leydecker T, Orgiu E. Organic multilevel (opto)electronic memories towards neuromorphic applications. NANOSCALE 2023. [PMID: 37378458 DOI: 10.1039/d3nr01311a] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/29/2023]
Abstract
In the past decades, neuromorphic computing has attracted the interest of the scientific community due to its potential to circumvent the von Neumann bottleneck. Organic materials, owing to their fine tunablility and their ability to be used in multilevel memories, represent a promising class of materials to fabricate neuromorphic devices with the key requirement of operation with synaptic weight. In this review, recent studies of organic multilevel memory are presented. The operating principles and the latest achievements obtained with devices exploiting the main approaches to reach multilevel operation are discussed, with emphasis on organic devices using floating gates, ferroelectric materials, polymer electrets and photochromic molecules. The latest results obtained using organic multilevel memories for neuromorphic circuits are explored and the major advantages and drawbacks of the use of organic materials for neuromorphic applications are discussed.
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Affiliation(s)
- Lin He
- Institute of Fundamental and Frontier Sciences (IFFS), University of Electronic Science and Technology of China, Chengdu 610054, China.
| | - Zuchong Yang
- Institut national de la recherche scientifique (INRS), Centre Énergie Matériaux Télécommunications, 1650 Boul. Lionel Boulet, Varennes J3X 1S2, Canada.
| | - Zhiming Wang
- Institute of Fundamental and Frontier Sciences (IFFS), University of Electronic Science and Technology of China, Chengdu 610054, China.
| | - Tim Leydecker
- Institute of Fundamental and Frontier Sciences (IFFS), University of Electronic Science and Technology of China, Chengdu 610054, China.
| | - Emanuele Orgiu
- Institut national de la recherche scientifique (INRS), Centre Énergie Matériaux Télécommunications, 1650 Boul. Lionel Boulet, Varennes J3X 1S2, Canada.
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17
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Xue Z, Xu Y, Jin C, Liang Y, Cai Z, Sun J. Halide perovskite photoelectric artificial synapses: materials, devices, and applications. NANOSCALE 2023; 15:4653-4668. [PMID: 36805124 DOI: 10.1039/d2nr06403k] [Citation(s) in RCA: 10] [Impact Index Per Article: 5.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/18/2023]
Abstract
In recent years, there has been a research boom on halide perovskites (HPs) whose outstanding performance in photovoltaic and optoelectronic fields is obvious to all. In particular, HP materials find application in the development of artificial synapses. HP-based synapses have great potential for artificial neuromorphic systems, which is due to their outstanding optoelectronic properties, femtojoule-level energy consumption, and simple fabrication process. In this review, we present the physical properties of HPs and describe two types of synaptic devices including two-terminal (2T) memristors and three-terminal (3T) transistors. The HP layer in 2T memristors can realize the change in the device conductance through physical mechanisms dominated by ion migration. On the other hand, HPs in 3T transistors can be used as efficient light-absorbing layers and rely on some special device structures to provide reliable current changes. In the final section of the article, we discuss some of the existing applications of HP-based synapses and bottlenecks to be solved.
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Affiliation(s)
- Zhengyang Xue
- Hunan Key Laboratory for Super Microstructure and Ultrafast Process, School of Physics and Electronics, Central South, University, Changsha, Hunan 410083, P. R. China.
- Hunan Key Laboratory of Nanophotonics and Devices, School of Physics and Electronics, Central South University, Changsha, Hunan 410083, P. R. China
| | - Yunchao Xu
- Hunan Key Laboratory for Super Microstructure and Ultrafast Process, School of Physics and Electronics, Central South, University, Changsha, Hunan 410083, P. R. China.
- Hunan Key Laboratory of Nanophotonics and Devices, School of Physics and Electronics, Central South University, Changsha, Hunan 410083, P. R. China
| | - Chenxing Jin
- Hunan Key Laboratory for Super Microstructure and Ultrafast Process, School of Physics and Electronics, Central South, University, Changsha, Hunan 410083, P. R. China.
- Hunan Key Laboratory of Nanophotonics and Devices, School of Physics and Electronics, Central South University, Changsha, Hunan 410083, P. R. China
| | - Yihuan Liang
- Hunan Key Laboratory for Super Microstructure and Ultrafast Process, School of Physics and Electronics, Central South, University, Changsha, Hunan 410083, P. R. China.
- Hunan Key Laboratory of Nanophotonics and Devices, School of Physics and Electronics, Central South University, Changsha, Hunan 410083, P. R. China
| | - Zihao Cai
- Hunan Key Laboratory for Super Microstructure and Ultrafast Process, School of Physics and Electronics, Central South, University, Changsha, Hunan 410083, P. R. China.
- Hunan Key Laboratory of Nanophotonics and Devices, School of Physics and Electronics, Central South University, Changsha, Hunan 410083, P. R. China
| | - Jia Sun
- Hunan Key Laboratory for Super Microstructure and Ultrafast Process, School of Physics and Electronics, Central South, University, Changsha, Hunan 410083, P. R. China.
- Hunan Key Laboratory of Nanophotonics and Devices, School of Physics and Electronics, Central South University, Changsha, Hunan 410083, P. R. China
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18
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Chen KT, Shih LC, Mao SC, Chen JS. Mimicking Pain-Perceptual Sensitization and Pattern Recognition Based on Capacitance- and Conductance-Regulated Neuroplasticity in Neural Network. ACS APPLIED MATERIALS & INTERFACES 2023; 15:9593-9603. [PMID: 36752572 DOI: 10.1021/acsami.2c20297] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/18/2023]
Abstract
Neuromorphic computing, inspired by the biological neuronal system, is a high potential approach to substantially alleviate the cost of computational latency and energy for massive data processing. Artificial synapses with regulable synaptic weights are the basis of neuromorphic computation, providing an efficient and low-power system to overcome the constraints of the von Neumann architecture. Here, we report an ITO/TaOx-based synaptic capacitor and transistor. With the drift motion of mobile-charged ions in the TaOx, the capacitance and channel conductance can be tuned to exhibit synaptic weight modulation. Robust stability in the cycle-to-cycle (C2C) variation is found in capacitance and conductance potentiation/depression weight updating of 0.9 and 1.8%, respectively. Simulation results show a higher classification accuracy of handwritten digit recognition (95%) in capacitance synapses than that in conductance synapses (84%). Besides, the synaptic capacitor consumes much less energy than the synaptic transistor. Moreover, the ITO/TaOx-based capacitor successfully emulates the pain-perceptual sensitization on top of the superior performance, indicating its promising potential in applying the capacitive neural network.
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Affiliation(s)
- Kuan-Ting Chen
- Department of Materials Science and Engineering, National Cheng Kung University, Tainan 701, Taiwan
| | - Li-Chung Shih
- Department of Materials Science and Engineering, National Cheng Kung University, Tainan 701, Taiwan
| | - Shi-Cheng Mao
- Department of Materials Science and Engineering, National Cheng Kung University, Tainan 701, Taiwan
| | - Jen-Sue Chen
- Department of Materials Science and Engineering, National Cheng Kung University, Tainan 701, Taiwan
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19
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Jiang L, Huang H, Zhang C, Yuan Y, Wang X, Qiu L. One-Step Preparation of Semiconductor/Dielectric Bilayer Structures for the Simulation of Flexible Bionic Photonic Synapses. ACS APPLIED MATERIALS & INTERFACES 2023; 15:7227-7235. [PMID: 36700528 DOI: 10.1021/acsami.2c22223] [Citation(s) in RCA: 5] [Impact Index Per Article: 2.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/17/2023]
Abstract
Flexible synaptic devices with information sensing, processing, and storage functions are indispensable in the development of wearable artificial intelligence electronic systems. Here, a semiconductor/dielectric bilayer structure was prepared by a one-step deposition method and used for the first time in a flexible biomimetic photonic synaptic transistor device. Specifically, poly(3-hexylthiophene)-block-poly(phenyl isocyanide) with pentafluorophenyl ester (P3HT-b-PPI(5F)) was prepared as the device active layer, where the P3HT segment served as a carrier transport channel and optical gate and the PPI(5F) segment was used for charge trapping. Various biomimetic synaptic behaviors, such as excitatory postsynaptic currents, paired-pulse facilitation, and short-term/long-term memory, were successfully simulated under green light stimulation. An ultra-low energy consumption of 1.82 fJ was achieved with a greatly reduced operating voltage. Further, the "Morse-code" optical decoding was simulated using the excellent synaptic plasticity of the device. In addition, flexible synaptic devices were prepared by a one-step deposition method and can be well-affixed to arbitrary substrates. This has promising applications in the field of wearable bionic electronics.
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Affiliation(s)
- Longlong Jiang
- National Engineering Lab of Special Display Technology, State Key Lab of Advanced Display Technology, Academy of Opto-Electronic Technology, Hefei University of Technology, Hefei230009, China
| | - Hua Huang
- National Engineering Lab of Special Display Technology, State Key Lab of Advanced Display Technology, Academy of Opto-Electronic Technology, Hefei University of Technology, Hefei230009, China
| | - Can Zhang
- National Engineering Lab of Special Display Technology, State Key Lab of Advanced Display Technology, Academy of Opto-Electronic Technology, Hefei University of Technology, Hefei230009, China
| | - Ye Yuan
- National Engineering Lab of Special Display Technology, State Key Lab of Advanced Display Technology, Academy of Opto-Electronic Technology, Hefei University of Technology, Hefei230009, China
| | - Xiaohong Wang
- National Engineering Lab of Special Display Technology, State Key Lab of Advanced Display Technology, Academy of Opto-Electronic Technology, Hefei University of Technology, Hefei230009, China
- Intelligent Interconnected Systems Laboratory of Anhui, Anhui Province Key Laboratory of Measuring Theory and Precision Instrument, School of Instrument Science and Optoelectronic Engineering, Hefei University of Technology, Hefei230009, China
| | - Longzhen Qiu
- National Engineering Lab of Special Display Technology, State Key Lab of Advanced Display Technology, Academy of Opto-Electronic Technology, Hefei University of Technology, Hefei230009, China
- Intelligent Interconnected Systems Laboratory of Anhui, Anhui Province Key Laboratory of Measuring Theory and Precision Instrument, School of Instrument Science and Optoelectronic Engineering, Hefei University of Technology, Hefei230009, China
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20
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Poddar S, Zhang Y, Chen Z, Ma Z, Fu Y, Ding Y, Chan CLJ, Zhang Q, Zhang D, Song Z, Fan Z. Image processing with a multi-level ultra-fast three dimensionally integrated perovskite nanowire array. NANOSCALE HORIZONS 2022; 7:759-769. [PMID: 35638535 DOI: 10.1039/d2nh00183g] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
Besides its ubiquitous applications in optoelectronics, halide-perovskites (HPs) have also carved a niche in the domain of resistive switching memories (Re-RAMs). However owing to the material and electrical instability challenges faced by HP thin-films, rarely perovskite Re-RAMs are used to experimentally demonstrate data processing which is a fundamental requirement for neuromorphic applications. Here, for the first time, lead-free, ultrahigh density HP nanowire (NW) array Re-RAM has been utilized to demonstrate image processing via design of convolutional kernels. The devices exhibited superior switching characteristics including a high endurance of 5 × 106 cycles, an ultra-fast erasing and writing speed of 900 ps and 2 ns, respectively, and a retention time >5 × 104 s for the resistances. The work is bolstered by an in-depth mechanistic study and first-principles simulations which provide evidence of electrochemical metallization triggering the switching. Employing the robust multi-level switching behaviour, image processing functions of embossing, outlining and sharpening were successfully implemented.
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Affiliation(s)
- Swapnadeep Poddar
- Department of Electronic & Computer Engineering, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong SAR, China.
| | - Yuting Zhang
- Department of Electronic & Computer Engineering, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong SAR, China.
| | - Zhesi Chen
- Department of Electronic & Computer Engineering, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong SAR, China.
| | - Zichao Ma
- Department of Electronic & Computer Engineering, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong SAR, China.
| | - Yu Fu
- Department of Electronic & Computer Engineering, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong SAR, China.
| | - Yucheng Ding
- Department of Electronic & Computer Engineering, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong SAR, China.
| | - Chak Lam Jonathan Chan
- Department of Electronic & Computer Engineering, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong SAR, China.
| | - Qianpeng Zhang
- Department of Electronic & Computer Engineering, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong SAR, China.
| | - Daquan Zhang
- Department of Electronic & Computer Engineering, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong SAR, China.
| | - Zhitang Song
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Micro-system and Information Technology, Chinese Academy of Sciences, Shanghai, 200050, China.
| | - Zhiyong Fan
- Department of Electronic & Computer Engineering, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong SAR, China.
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