(GeTe)1-x(AgSnSe2)x: Strong Atomic Disorder-Induced High Thermoelectric Performance near the Ioffe-Regel Limit

High-entropy materials for thermoelectric applications: towards performance and reliability

High-entropy materials (HEMs), including alloys, ceramics and other entropy-stabilized compounds, have attracted considerable attention in different application fields. This is due to their intrinsically unique concept and properties, such as innovative chemical composition, structural characteristics, and correspondingly improved functional properties. By establishing an environment with different chemical compositions, HEMs as novel materials possessing superior attributes present unparalleled prospects when compared with their conventional counterparts. Notably, great attention has been paid to investigating HEMs such as thermoelectrics (TE), especially for application in energy-related fields. In this review, we started with the basic definitions of TE fundamentals, the existing thermoelectric materials (TEMs), and the strategies adopted for their improvement. Moreover, we introduced HEMs, summarized the core effects of high-entropy (HE), and emphasized how HE will open up new avenues for designing high-entropy thermoelectric materials (HETEMs) with promising performance and high reliability. Through selecting and analyzing recent scientific publications, this review outlines recent scientific breakthroughs and the associated challenges in the field of HEMs for TE applications. Finally, we classified the different types of HETEMs based on their structure and properties and discussed recent advances in the literature.

Nuanced dilute doping strategy enables high-performance GeTe thermoelectrics

In thermoelectrics, doping is essential to augment the figure of merit. Traditional strategy, predominantly heavy doping, aims to optimize carrier concentration and restrain lattice thermal conductivity. However, this tactic can severely hamper carrier transport due to pronounced point defect scattering, particularly in materials with inherently low carrier mean-free-path. Conversely, dilute doping, although minimally affecting carrier mobility, frequently fails to optimize other vital thermoelectric parameters. Herein, we present a more nuanced dilute doping strategy in GeTe, leveraging the multifaceted roles of small-size metal atoms. A mere 4% CuPbSbTe3 introduction into GeTe swiftly suppresses rhombohedral distortion and optimizes carrier concentration through the aid of Cu interstitials. Additionally, the formation of multiscale microstructures, including zero-dimensional Cu interstitials, one-dimensional dislocations, two-dimensional planar defects, and three-dimensional nanoscale amorphous GeO2 and Cu2GeTe3 precipitates, along with the ensuing lattice softening, contributes to an ultralow lattice thermal conductivity. Intriguingly, dilute CuPbSbTe3 doping incurs only a marginal decrease in carrier mobility. Subsequent trace Cd doping, employed to alleviate the bipolar effect and align the valence bands, yields an impressive figure-of-merit of 2.03 at 623 K in (Ge0.97Cd0.03Te)0.96(CuPbSbTe3)0.04. This leads to a high energy-conversion efficiency of 7.9% and a significant power density of 3.44 W cm-2 at a temperature difference of 500 K. These results underscore the invaluable insights gained into the constructive role of nuanced dilute doping in the concurrent tuning of carrier and phonon transport in GeTe and other thermoelectric materials.

Stepwise Alloying in Liquid-like Solid Solutions to Achieve Crystallographic Distortion for Regulating Thermoelectric Transport Behavior

With the surge of energy consumption, environmental-protection Cu2-xSe thermoelectric materials are increasingly attracting attention. In this work, multilayered structures are constructed in Cu2-xSe solid solutions by alloying (SnSe)0.75(AgBiSe2)0.25, which strongly scatters full-wavelength phonons by carefully regulating the crystallographic distortion. By using the stepwise alloying strategies, crystallographic distortion and the resultant strain fields presented in microstructure were strengthened markedly, which enhanced the phonon scattering. Meanwhile, by adjusting the coalloying content of Ag, Bi, and Sn elements, the carrier and phonon transports were well decoupled in p-type Cu2-xSe, and the thermoelectric performance was significantly enhanced. By optimized power factor as well as depressed heat transport originating from the moderate coalloying, the maximum zT of 1.23 at 750 K was achieved in Cu1.9Se - 1 wt % (SnSe)0.75(AgBiSe2)0.25. This study indicated that the stepwise alloying strategy was a suitable method for optimizing zT of Cu2-xSe.

Advances in thermoelectric AgBiSe2: Properties, strategies, and future challenges

Thermoelectric materials are attracting considerable attention to alleviate the global energy crisis by enabling the direct conversion of heat into electricity. As a class of I-V-VI2 semiconductors, AgBiSe2 is expected to be the potential thermoelectric material to replace conventional PbTe-based compounds due to its non-toxic and abundant nature of its constituent elements. This review article summarizes the fundamental properties of AgBiSe2, thermoelectric properties, the effect of different dopants on its transport properties and entropy engineering for cubic phase stabilization with the detailed description of related techniques used to analyze the properties of AgBiSe2. The current thermoelectric figure-of-merit and approaches to further improve performance and operational stability are also discussed.

All-Three-Dimensionally-Printed AgPd Thick-Film Strain Gauge with a Glass-Ceramic Protective Layer for High-Temperature Applications

A high-temperature thin/thick-film strain gauge (TFSG) shows development prospects for in situ strain monitoring of hot-end components due to their small perturbations, no damage, and fast response. Direct ink writing (DIW) 3D printing is an emerging and facile approach for the rapid fabrication of TFSG. However, TFSGs prepared based on 3D printing with both high thermal stability and low temperature coefficient of resistance (TCR) over a wide temperature range remain a great challenge. Here, we report a AgPd TFSG with a glass-ceramic protective layer based on DIW. By encapsulating the AgPd sensitive layer and regulating the Pd content, the AgPd TFSG demonstrated a low TCR (191.6 ppm/°C) from 50 to 800 °C and ultrahigh stability (with a resistance drift rate of 0.14%/h at 800 °C). Meanwhile, the achieved specifications for strain detection included a strain sensing range of ±500 με, fast response time of 153 ms, gauge factor of 0.75 at 800 °C, and high durability of >8000 cyclic loading tests. The AgPd TFSG effectively monitors strain in superalloys and can be directly deposited onto cylindrical surfaces, demonstrating the scalability of the presented approach. This work provides a strategy to develop TFSGs for in situ sensing of complex curved surfaces in harsh environments.

Boosting Thermoelectric Performance in Epitaxial GeTe Film/Si by Domain Engineering and Point Defect Control

This study demonstrates a simultaneous realization of ultralow thermal conductivity and high thermoelectric power factor in epitaxial GeTe thin films/Si substrates by a combination of the interface introduction by domain engineering and the suppression of Ge vacancy generation by point defect control. We formed epitaxial Te-poor GeTe thin films having low-angle grain boundaries with a misorientation angle close to 0° or twin interfaces with a misorientation angle close to 180°. The control of interfaces and point defects gave rise to ultralow lattice thermal conductivity of ∼0.7 ± 0.2 W m^-1 K^-1. This value was the same in the order of magnitude as the theoretical minimum lattice thermal conductivity of ∼0.5 W m^-1 K^-1 calculated by the Cahill-Pohl model. At the same time, the GeTe thin films exhibited a high thermoelectric power factor because of the suppression of Ge vacancy generation and a small contribution of grain boundary carrier scattering. The outstanding combined technique of domain engineering and point defect control can be a great approach for developing high-performance thermoelectric films.

All Cubic-Phase δ-TAGS Thermoelectrics Over the Entire Mid-Temperature Range

GeTe-based pseudo-binary (GeTe)_x (AgSbTe₂ )_{100- x} (TAGS-x) is recognized as a promising p-type mid-temperature thermoelectric material with outstanding thermoelectric performance; nevertheless, its intrinsic structural transition and metastable microstructure (due to Ag/Sb/Ge localization) restrict the long-time application of TAGS-x in practical thermoelectric devices. In this work, a series of non-stoichiometric (GeTe)_x (Ag_{1- δ} Sb_{1+ δ} Te_{2+ δ} )_{100- x} (x = 85∼50; δ = ≈0.20-0.23), referred to as δ-TAGS-x, with all cubic phase over the entire testing temperature range (300-773 K), is synthesized. Through optimization of crystal symmetry and microstructure, a state-of-the-art ZT_max of 1.86 at 673 K and average ZT_avg of 1.43 at ≈323-773 K are realized in δ-TAGS-75 (δ = 0.21), which is the highest value among all reported cubic-phase GeTe-based thermoelectric systems so far. As compared with stoichiometric TAGS-x, the remarkable thermoelectric achieved in cubic δ-TAGS-x can be attributed to the alleviation of highly (electrical and thermal) resistive grain boundary Ag₈ GeTe₆ phase. Moreover, δ-TAGS-x exhibits much better mechanical properties than stoichiometric TAGS-x, together with the outstanding thermoelectric performance, leading to a robust single-leg thermoelectric module with η_max of ≈10.2% and P_max of ≈0.191 W. The finding in this work indicates the great application potential of non-stoichiometric δ-TAGS-x in the field of mid-temperature waste heat harvesting.

Research on the Influence of the Interfacial Properties Between a Cu3 BiS3 Film and an Inx Cd1- x S Buffer Layer for Photoelectrochemical Water Splitting

The ternary compound photovoltaic semiconductor Cu3 BiS3 thin film-based photoelectrode demonstrates a quite promising potential for photoelectrochemical hydrogen evolution. The presented high onset potential of 0.9 VRHE attracts much attention and shows that the Cu3 BiS3 thin films are quite good as an efficient solar water splitting photoelectrode. However, the CdS buffer does not fit the Cu3 BiS3 thin film: the conduction band offset between CdS and Cu3 BiS3 reaches 0.7 eV, and such a high conduction band offset (CBO) significantly increases the interfacial recombination ratio and is the main reason for the relatively low photocurrent of the Cu3 BiS3 /CdS photoelectrode. In this study, the Inx Cd1- x S buffer layer is found to be significantly lowered the CBO of CBS/buffer and that the In incorporation ratio of the buffer influences the CBO value of the CBS/buffer. The Pt-TiO2 /In0.6 Cd0.4 S/Cu3 BiS3 photocathode exhibits an appreciable photocurrent density of ≈12.20 mA cm-2 at 0 VRHE with onset potential of more than 0.9 VRHE , and the ABPE of the Cu3 BiS3 -based photocathode reaches the highest value of 3.13%. By application of the In0.6 Cd0.4 S buffer, the Cu3 BiS3 -BiVO4 tandem cell presents a stable and excellent unbiased STH of 2.57% for over 100 h.

Regulating the Configurational Entropy to Improve the Thermoelectric Properties of (GeTe)1-x(MnZnCdTe3)x Alloys

In thermoelectrics, entropy engineering as an emerging paradigm-shifting strategy can simultaneously enhance the crystal symmetry, increase the solubility limit of specific elements, and reduce the lattice thermal conductivity. However, the severe lattice distortion in high-entropy materials blocks the carrier transport and hence results in an extremely low carrier mobility. Herein, the design principle for selecting alloying species is introduced as an effective strategy to compensate for the deterioration of carrier mobility in GeTe-based alloys. It demonstrates that high configurational entropy via progressive MnZnCdTe₃ and Sb co-alloying can promote the rhombohedral-cubic phase transition temperature toward room temperature, which thus contributes to the enhanced density-of-states effective mass. Combined with the reduced carrier concentration via the suppressed Ge vacancies by high-entropy effect and Sb donor doping, a large Seebeck coefficient is attained. Meanwhile, the severe lattice distortions and micron-sized Zn_0.6Cd_0.4Te precipitations restrain the lattice thermal conductivity approaching to the theoretical minimum value. Finally, the maximum zT of Ge_0.82Sb_0.08Te_0.90(MnZnCdTe₃)_0.10 reaches 1.24 at 723 K via the trade-off between the degraded carrier mobility and the improved Seebeck coefficient, as well as the depressed lattice thermal conductivity. These results provide a reference for the implementation of entropy engineering in GeTe and other thermoelectric materials.

Suppressing Charged Cation Antisites via Se Vapor Annealing Enables p-Type Dopability in AgBiSe2 -SnSe Thermoelectrics

Cation disordering is commonly found in multinary cubic compounds, but its effect on electronic properties has been neglected because of difficulties in determining the ordered structure and defect energetics. An absence of rational understanding of the point defects present has led to poor reproducibility and uncontrolled conduction type. AgBiSe₂ is a representative compound that suffers from poor reproducibility of thermoelectric properties, while the origins of its intrinsic n-type conductivity remain speculative. Here, it is demonstrated that cation disordering is facilitated by Bi_Ag charged antisite defects in cubic AgBiSe₂ which also act as a principal donor defect that greatly controls the electronic properties. Using density functional theory calculations and in situ Raman spectroscopy, how saturation annealing with selenium vapor can stabilize p-type conductivity in cubic AgBiSe₂ alloyed with SnSe at high temperatures is elucidated. With stable and controlled hole concentration, a peak is observed in the weighted mobility and the density-of-states effective mass in AgBiSnSe₃ , implying an increased valley degeneracy in this system. These findings corroborate the importance of considering the defect energetics for exploring the dopability of ternary thermoelectric chalcogenides and engineering electronic bands by controlling self-doping.

Seeing Structural Mechanisms of Optimized Piezoelectric and Thermoelectric Bulk Materials through Structural Defect Engineering

Aberration-corrected scanning transmission electron microscopy (AC-STEM) has evolved into the most powerful characterization and manufacturing platform for all materials, especially functional materials with complex structural characteristics that respond dynamically to external fields. It has become possible to directly observe and tune all kinds of defects, including those at the crucial atomic scale. In-depth understanding and technically tailoring structural defects will be of great significance for revealing the structure-performance relation of existing high-property materials, as well as for foreseeing paths to the design of high-performance materials. Insights would be gained from piezoelectrics and thermoelectrics, two representative functional materials. A general strategy is highlighted for optimizing these functional materials’ properties, namely defect engineering at the atomic scale.