Van der Waals MoS2/Two-Dimensional Perovskite Heterostructure for Sensitive and Ultrafast Sub-Band-Gap Photodetection

Light-Induced Electronic Band Realignment at the Metal Halide Perovskite/Monolayer MoS2 Heterojunction

van der Waals (vdW) heterojunctions offer many routes for advanced interface engineering toward superior optoelectronic functionality. To this end, the combination of 2D transition metal dichalcogenides (TMDCs) with metal halide perovskites has shown great potential for applications in photovoltaics and photodetectors. The electronic energy level alignment at such heterojunctions, i.e., the relative alignment of valence and conduction bands of the two materials, is crucial for their functionality, but its experimental determination is notoriously challenging. In this contribution, we determine the energy level alignment for the vdW heterojunction composed of monolayer molybdenum disulfide (ML-MoS2) and a triple cation-mixed halide perovskite, enabled by surface cleaning by argon cluster sputtering. This effectively removes surface contaminants from the perovskite/ML-MoS2 stack without causing damage, enabling direct determination of the band alignment at the interface using ultraviolet and X-ray photoelectron spectroscopy. Our results reveal a type-II band alignment at the perovskite/ML-MoS2 interface. Importantly, the interfacial energy levels are not fixed once the heterojunction is formed, but the MoS2 energy levels shift relative to those of the perovskite under 1 sun illumination compared to the dark, by up to 0.25 eV. This energy level realignment, under conditions mimicking a photovoltaic device under operation, is attributed to photogenerated electron accumulation in the ML-MoS2. Microscopic photoluminescence (PL) measurements reveal significant quenching of the perovskite PL signal in the heterojunction, confirming efficient charge transfer and the establishment of a type-II heterojunction. These results demonstrate a "living" heterojunction energy landscape, opening up novel avenues for engineering perovskite/TMDCs vdW heterojunctions for optoelectronic devices.

Ruddlesden-Popper 2D Perovskite-MoS2 Hybrid Heterojunction Photocathodes for Efficient and Scalable Photo-Rechargeable Li-Ion Batteries

Photo-rechargeable batteries (PRBs) can provide a compact solution to power autonomous smart devices located at remote sites that cannot be connected with the grid. The study reports the Ruddlesden-Popper (RP) metal halide perovskite (MHP) and molybdenum disulfide (MoS2) hybrid heterojunction-based photocathodes for Li-ion photo-rechargeable battery (Li-PRB) applications. Hybrid Lithium-ion batteries (LIBs) have demonstrated an average discharge specific capacity of 144.46 and 129.17 mAhg-1 for 50 cycles when operating at 176 and 294 mAg-1, respectively compared to the pristine LIBs which have shown specific capacity of 37.48 and 25.60 mAhg-1 under similar conditions. Hybrid Li-PRB has achieved an average dark discharge specific capacities of 128.66 mAhg-1 (capacity retention: 96.56%) which enhanced to 180.67 mAhg-1 under illumination (capacity retention: 97.39%; photo-enhancement: 40.42%) at 64 mAg-1. Excellent performance of hybrid Li-PRB is attributed to the formation of type-II heterojunction that leads to improved crystallinity and film morphology. The PRB has demonstrated a high photo conversion and storage efficiency (PC-SE) of 0.52% under standard 1 Sun illumination, which outperforms other previously reported MHP based LIBs and PRBs. This work provides a novel approach of harnessing the potential of MHPs for PRBs and offers new avenues for MHP photocathodes for various applications beyond PRBs.

High-Performance Broadband Self-Driven Photodetector Based on MoS2/Cs2CuBr4 Heterojunction

Few-layer transition metal dichalcogenides and perovskites are both promising materials in high-performance optoelectronic devices. Here, we developed a self-driven photodetector by creating a heterojunction between few-layer MoS2 and lead-free perovskite Cs2CuBr4. The detector shows a unique property of very high sensitivity in a broad spectral range of 400 to 800 nm with response speed in a millisecond order. Current-voltage characteristics of the heterojunction device show rectifying behavior, in contrast to the ohmic behavior of the MoS2-based device. The rectifying behavior is attributed to the type II band alignment of the MoS2/Cs2CuBr4 heterojunction. The device shows a broadband (400 to 800 nm) photodetection with very high responsivity reaching up to 2.8 × 104 A/W and detectivity of 1.6 × 1011 Jones at a bias voltage of 3 V. The detector can also operate in self-bias mode with sufficient response. The photocurrent, photoresponsivity, detectivity, and external quantum efficiency of the device are found to be dependent on the illumination power density. The response time of the device is found to be ∼32 and ∼79 ms during the rise and fall of the photocurrent. The work proposes a MoS2/Cs2CuBr4 heterostructure to be a promising candidate for cost-effective, high-performance photodetector.

Recent advances in 2D transition metal dichalcogenide-based photodetectors: a review

Two-dimensional (2D) transition metal dichalcogenides (TMDs) have emerged as a highly promising platform for the development of photodetectors (PDs) owing to their remarkable electronic and optoelectronic properties. Highly effective PDs can be obtained by making use of the exceptional properties of 2D materials, such as their high transparency, large charge carrier mobility, and tunable electronic structure. The photodetection mechanism in 2D TMD-based PDs is thoroughly discussed in this article, with special attention paid to the key characteristics that set them apart from PDs based on other integrated materials. This review examines how single TMDs, TMD-TMD heterostructures, TMD-graphene (Gr) hybrids, TMD-MXene composites, TMD-perovskite heterostructures, and TMD-quantum dot (QD) configurations show advanced photodetection. Additionally, a thorough analysis of the recent developments in 2D TMD-based PDs, highlighting their exceptional performance capabilities, including ultrafast photo response, ultrabroad detectivity, and ultrahigh photoresponsivity, attained through cutting-edge methods is provided. The article conclusion highlights the potential for ground-breaking discoveries in this fast developing field of research by outlining the challenges faced in the field of PDs today and providing an outlook on the prospects of 2D TMD-based PDs in the future.

Carrier transfer in quasi-2D perovskite/MoS2 monolayer heterostructure

Two-dimensional layered semiconductors have attracted intense interest in recent years. The van der Waals coupling between the layers tolerates stacking various materials and establishing heterostructures with new characteristics for a wide range of optoelectronic applications. The interlayer exciton dynamics at the interface within the heterostructure are vitally important for the performance of the photodetector and photovoltaic device. Here, a heterostructure comprising two-dimensional organic-inorganic Ruddlesden-Popper perovskites and transition metal dichalcogenide monolayer was fabricated and its ultrafast charge separation processes were systematically studied by using femtosecond time-resolved transient absorption spectroscopy. Significant hole and electron transfer processes in the ps and fs magnitude at the interface of the heterostructure were observed by tuning pump wavelengths of the pump-probe geometries. The results emphasize the realization of the exciton devices based on semiconductor heterostructures of two-dimensional perovskite and transition metal dichalcogenide.

Defect-Passivated Photosensor Based on Cesium Lead Bromide (CsPbBr3) Perovskite Quantum Dots for Microbial Detection

A defect-passivated photosensor based on cesium lead bromide (CsPbBr3) perovskite quantum dots (QD) was fabricated using parylene films, and the photosensor was applied for the microbial detection. The CsPbBr3 perovskite QDs were synthesized to be homogeneous in size under thermodynamic control, and the perovskite QD-based photosensor was fabricated using MoS2 flakes as the electron transfer layer. In this work, a parylene film with functional groups was deposited on a photosensor for physical protection (waterproof) and defect (halide vacancy) passivation of the perovskite QD. As the first effect of the parylene film, the physical protection of the perovskite QD from water was estimated by comparing the photosensor performance after incubation in water. As the second effect of the parylene, the interaction between the functional groups of the parylene film and the halide vacancies of the perovskite QDs was investigated through the bandgap, crystal structure, and trap-state density analysis. Additionally, density functional theory analysis on Mulliken charges, lattice parameters, and Gibbs free energy demonstrated the effect of the defect passivation by parylene films. Finally, the parylene-passivated QD-based photosensor was applied to the detection of two kinds of food-poisoning and gastroduodenal disease bacteria (Listeria monocytogenes and Helicobacter pylori).

Optical Enhancement of Indirect Bandgap 2D Transition Metal Dichalcogenides for Multi-Functional Optoelectronic Sensors

The unique electrical and optical properties of transition metal dichalcogenides (TMDs) make them attractive nanomaterials for optoelectronic applications, especially optical sensors. However, the optical characteristics of these materials are dependent on the number of layers. Monolayer TMDs have a direct bandgap that provides higher photoresponsivity compared to multilayer TMDs with an indirect bandgap. Nevertheless, multilayer TMDs are more appropriate for various photodetection applications due to their high carrier density, broad spectral response from UV to near-infrared, and ease of large-scale synthesis. Therefore, this review focuses on the modification of the optical properties of devices based on indirect bandgap TMDs and their emerging applications. Several successful developments in optical devices are examined, including band structure engineering, device structure optimization, and heterostructures. Furthermore, it introduces cutting-edge techniques and future directions for optoelectronic devices based on multilayer TMDs.

Increased Mobility and Reduced Hysteresis of MoS2 Field-Effect Transistors via Direct Surface Precipitation of CsPbBr3-Nanoclusters for Charge Transfer Doping

Transition-metal dichalcogenides (TMDs) and metal halide perovskites (MHPs) have been investigated for various applications, owing to their unique physical properties and excellent optoelectronic functionalities. TMD monolayers synthesized via chemical vapor deposition (CVD), which are advantageous for large-area synthesis, exhibit low mobility and prominent hysteresis in the electrical signals of field-effect transistors (FETs) because of their native defects. In this study, we demonstrate an increase in electrical mobility by ∼170 times and reduced hysteresis in the current-bias curves of MoS2 FETs hybridized with CsPbBr3 for charge transfer doping, which is implemented via solution-based CsPbBr3-nanocluster precipitation on CVD-grown MoS2 monolayer FETs. Electrons injected from CsPbBr3 into MoS2 induce heavy n-doping and heal point defects in the MoS2 channel layer, thus significantly increasing mobility and reducing hysteresis in the hybrid FETs. Our results provide a foundation for improving the reliability and performance of TMD-based FETs by hybridizing them with solution-based perovskites.

Highly Sensitive Self-Powered Humidity Sensor Based on a TaS2/Cu2S Heterostructure Driven by a Triboelectric Nanogenerator

Self-powered humidity sensors with high response and good stability have attracted extensive interest in environmental monitoring, medical and health care, and sentiment detection. Because of its high specific surface area and good conductivity, two-dimensional material has wide application in the field of humidity sensing. In this work, we proposed a novel self-powered high-performance TaS₂/Cu₂S heterostructure-based humidity sensor driven by a triboelectric nanogenerator (TENG) made with the same structure. The TaS₂/Cu₂S heterostructure was prepared via the chemical vapor deposition method, and then, electrolytic and ultrasound treatments were introduced to further increase the surface area. The fabricated humidity sensor showed ultrahigh sensitivity (S = 3.08 × 10⁴), fast response (2 s), low hysteresis (3.5%), and great stability. First-principles calculation results demonstrated the existence of an electron transport channel with a low energy barrier (-0.156 eV) from the Cu₂S to TaS₂ layer in the heterostructure, which improves the surface charge transfer of the material. The TaS₂/Cu₂S heterojunction-based TENG can generate an output voltage of 30 V and an output current of 2.9 μA. Furthermore, the proposed self-powered humidity sensor verified the potential ability of detecting human respiratory frequency, skin humidity, and environmental humidity. This work provides a new and feasible path for research in the field of humidity sensors and promotes the application development of self-powered electronic devices.

2D Ruddlesden-Popper perovskite sensitized SnP2S6 ultraviolet photodetector enabling high responsivity and fast speed

As the newly developed wide-bandgap semiconductors, two-dimensional layered metal phosphorus chalcogenides (2D LMPCs) exhibit enormous potential applications in ultraviolet (UV) photodetection due to their superior optoelectronic performance. However, 2D LMPC-based UV photodetectors generally suffer from low responsivity and slow response speed, which hinder their practical applications. Here, we present an effective strategy of sensitizing 2D LMPC UV photodetectors with a 2D Ruddlesden-Popper (RP) perovskite to enable high responsivity and fast response speed. As a demonstration, a hybrid heterojunction composed of RP perovskite (PEA)₂PbI₄ and a 2D SnP₂S₆ flake is fabricated by spin-coating method. Benefitting from the strong optical absorption of (PEA)₂PbI₄ and the efficient interfacial charge transfer caused by the favorable type-II energy band alignment, the as-fabricated 2D SnP₂S₆/(PEA)₂PbI₄ hybrid heterojunction photodetectors show high responsivity (67.1 A W^-1), large detectivity (2.8 × 10¹¹ Jones), fast rise/delay time (30/120 μs) and excellent external quantum efficiency (22825%) at 365 nm. Under field-effect modulation, the responsivity of the heterojunction photodetector can reach up to 239.4 A W^-1, which is attributed to the photogating mechanism and reduced Schottky barriers. Owing to the excellent photodetection performance, the heterojunction device further shows superior imaging capability. This work provides an effective strategy for designing high-performance UV photodetectors toward future applications.

Advances of Various Heterogeneous Structure Types in Molecular Junction Systems and Their Charge Transport Properties

Molecular electronics that can produce functional electronic circuits using a single molecule or molecular ensemble remains an attractive research field because it not only represents an essential step toward realizing ultimate electronic device scaling but may also expand our understanding of the intrinsic quantum transports at the molecular level. Recently, in order to overcome the difficulties inherent in the conventional approach to studying molecular electronics and developing functional device applications, this field has attempted to diversify the electrical characteristics and device architectures using various types of heterogeneous structures in molecular junctions. This review summarizes recent efforts devoted to functional devices with molecular heterostructures. Diverse molecules and materials can be combined and incorporated in such two- and three-terminal heterojunction structures, to achieve desirable electronic functionalities. The heterojunction structures, charge transport mechanisms, and possible strategies for implementing electronic functions using various hetero unit materials are presented sequentially. In addition, the applicability and merits of molecular heterojunction structures, as well as the anticipated challenges associated with their implementation in device applications are discussed and summarized. This review will contribute to a deeper understanding of charge transport through molecular heterojunction, and it may pave the way toward desirable electronic functionalities in molecular electronics applications.

Advances in Two-Dimensional Materials for Optoelectronics Applications

The past one and a half decades have witnessed the tremendous progress of two-dimensional (2D) crystals, including graphene, transition-metal dichalcogenides, black phosphorus, MXenes, hexagonal boron nitride, etc., in a variety of fields. The key to their success is their unique structural, electrical, mechanical and optical properties. Herein, this paper gives a comprehensive summary on the recent advances in 2D materials for optoelectronic approaches with the emphasis on the morphology and structure, optical properties, synthesis methods, as well as detailed optoelectronic applications. Additionally, the challenges and perspectives in the current development of 2D materials are also summarized and indicated. Therefore, this review can provide a reference for further explorations and innovations of 2D material-based optoelectronics devices.