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Sun H, Wang H, Dong S, Dai S, Li X, Zhang X, Deng L, Liu K, Liu F, Tan H, Xue K, Peng C, Wang J, Li Y, Yu A, Zhu H, Zhan Y. Optoelectronic synapses based on a triple cation perovskite and Al/MoO 3 interface for neuromorphic information processing. NANOSCALE ADVANCES 2024; 6:559-569. [PMID: 38235083 PMCID: PMC10790979 DOI: 10.1039/d3na00677h] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 08/23/2023] [Accepted: 12/06/2023] [Indexed: 01/19/2024]
Abstract
Optoelectronic synaptic transistors are attractive for applications in next-generation brain-like computation systems, especially for their visible-light operation and in-sensor computing capabilities. However, from a material perspective, it is difficult to build a device that meets expectations in terms of both its functions and power consumption, prompting the call for greater innovation in materials and device construction. In this study, we innovatively combined a novel perovskite carrier supply layer with an Al/MoO3 interface carrier regulatory layer to fabricate optoelectronic synaptic devices, namely Al/MoO3/CsFAMA/ITO transistors. The device could mimic a variety of biological synaptic functions and required ultralow-power consumption during operation with an ultrafast speed of >0.1 μs under an optical stimulus of about 3 fJ, which is equivalent to biological synapses. Moreover, Pavlovian conditioning and visual perception tasks could be implemented using the spike-number-dependent plasticity (SNDP) and spike-rate-dependent plasticity (SRDP). This study suggests that the proposed CsFAMA synapse with an Al/MoO3 interface has the potential for ultralow-power neuromorphic information processing.
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Affiliation(s)
- Haoliang Sun
- Peng Cheng Laboratory Shenzhen 518055 China
- Center for Micro Nano Systems, School of Information Science and Technology (SIST), Fudan University Shanghai 200433 China
| | - Haoliang Wang
- Center for Micro Nano Systems, School of Information Science and Technology (SIST), Fudan University Shanghai 200433 China
| | | | - Shijie Dai
- Center for Micro Nano Systems, School of Information Science and Technology (SIST), Fudan University Shanghai 200433 China
| | - Xiaoguo Li
- Center for Micro Nano Systems, School of Information Science and Technology (SIST), Fudan University Shanghai 200433 China
| | - Xin Zhang
- Center for Micro Nano Systems, School of Information Science and Technology (SIST), Fudan University Shanghai 200433 China
| | - Liangliang Deng
- Center for Micro Nano Systems, School of Information Science and Technology (SIST), Fudan University Shanghai 200433 China
| | - Kai Liu
- Center for Micro Nano Systems, School of Information Science and Technology (SIST), Fudan University Shanghai 200433 China
| | - Fengcai Liu
- Center for Micro Nano Systems, School of Information Science and Technology (SIST), Fudan University Shanghai 200433 China
| | - Hua Tan
- Center for Micro Nano Systems, School of Information Science and Technology (SIST), Fudan University Shanghai 200433 China
| | - Kun Xue
- Peng Cheng Laboratory Shenzhen 518055 China
| | - Chao Peng
- Peng Cheng Laboratory Shenzhen 518055 China
- State Key Laboratory of Advanced Optical Communication Systems and Networks, Department of Electronics and Frontiers Science Center for Nano-optoelectronics, Peking University Beijing 100080 China
| | - Jiao Wang
- Center for Micro Nano Systems, School of Information Science and Technology (SIST), Fudan University Shanghai 200433 China
| | - Yi Li
- Peng Cheng Laboratory Shenzhen 518055 China
- Shanghai Engineering Research Center for Broadband Technologies and Applications Shanghai 200436 China
| | - Anran Yu
- Center for Micro Nano Systems, School of Information Science and Technology (SIST), Fudan University Shanghai 200433 China
| | - Hongyi Zhu
- Peng Cheng Laboratory Shenzhen 518055 China
- Shanghai Engineering Research Center for Broadband Technologies and Applications Shanghai 200436 China
| | - Yiqiang Zhan
- Center for Micro Nano Systems, School of Information Science and Technology (SIST), Fudan University Shanghai 200433 China
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Li S, Du J, Lu B, Yang R, Hu D, Liu P, Li H, Bai J, Ye Z, Lu J. Gradual conductance modulation by defect reorganization in amorphous oxide memristors. MATERIALS HORIZONS 2023; 10:5643-5655. [PMID: 37753658 DOI: 10.1039/d3mh01035j] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 09/28/2023]
Abstract
Amorphous oxides show great prospects in revolutionizing memristors benefiting from their abundant non-stoichiometric composition. However, an in-depth investigation of the memristive characteristics in amorphous oxides is inadequate and the resistive switching mechanism is still controversial. In this study, aiming to clearly understand the gradual conductance modulation that is deeply bound to the evolution of defects-mainly oxygen vacancies, forming-free memristors based on amorphous ZnAlSnO are fabricated, which exhibit high reproducibility with an initial low-resistance state. Pulse depression reveals the logarithmic-exponential mixed relaxation during RESET owing to the diffusion of oxygen vacancies in orthogonal directions. The remnants of conductive filaments formed through aggregation of oxygen vacancies induced by high-electric-field are identified using ex situ TEM. Especially, the conductance of the filament, including the remnant filament, is larger than that of the hopping conductive channel derived from the diffusion of oxygen vacancies. The Fermi level in the conduction band rationalizes the decay of the high resistance state. Rare oxidation-migration of Au occurs upon device failure, resulting in numerous gold nanoclusters in the functional layer. These comprehensive revelations on the reorganization of oxygen vacancies could provide original ideas for the design of memristors.
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Affiliation(s)
- Siqin Li
- State Key Laboratory of Silicon and Advanced Semiconductor Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou 310058, China.
| | - Jigang Du
- College of Chemical and Biological Engineering, Zhejiang University, Hangzhou 310058, China
| | - Bojing Lu
- State Key Laboratory of Silicon and Advanced Semiconductor Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou 310058, China.
| | - Ruqi Yang
- State Key Laboratory of Silicon and Advanced Semiconductor Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou 310058, China.
| | - Dunan Hu
- State Key Laboratory of Silicon and Advanced Semiconductor Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou 310058, China.
| | - Pingwei Liu
- College of Chemical and Biological Engineering, Zhejiang University, Hangzhou 310058, China
| | - Haiqing Li
- School of Electromechanical Engineering, Guangdong University of Technology, Guangzhou 510006, China
| | - Jingsheng Bai
- Sinoma Institute of Materials Research (Guang Zhou) Co., Ltd (SIMR), Guangzhou 510530, China
| | - Zhizhen Ye
- State Key Laboratory of Silicon and Advanced Semiconductor Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou 310058, China.
| | - Jianguo Lu
- State Key Laboratory of Silicon and Advanced Semiconductor Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou 310058, China.
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Kim HS, Park H, Cho WJ. Light-Stimulated IGZO Transistors with Tunable Synaptic Plasticity Based on Casein Electrolyte Electric Double Layer for Neuromorphic Systems. Biomimetics (Basel) 2023; 8:532. [PMID: 37999173 PMCID: PMC10669183 DOI: 10.3390/biomimetics8070532] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 08/30/2023] [Revised: 11/05/2023] [Accepted: 11/07/2023] [Indexed: 11/25/2023] Open
Abstract
In this study, optoelectronic synaptic transistors based on indium-gallium-zinc oxide (IGZO) with a casein electrolyte-based electric double layer (EDL) were examined. The casein electrolyte played a crucial role in modulating synaptic plasticity through an internal proton-induced EDL effect. Thus, important synaptic behaviors, such as excitatory post-synaptic current, paired-pulse facilitation, and spike rate-dependent and spike number-dependent plasticity, were successfully implemented by utilizing the persistent photoconductivity effect of the IGZO channel stimulated by light. The synergy between the light stimulation and the EDL effect allowed the effective modulation of synaptic plasticity, enabling the control of memory levels, including the conversion of short-term memory to long-term memory. Furthermore, a Modified National Institute of Standards and Technology digit recognition simulation was performed using a three-layer artificial neural network model, achieving a high recognition rate of 90.5%. These results demonstrated a high application potential of the proposed optoelectronic synaptic transistors in neuromorphic visual systems.
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Affiliation(s)
- Hwi-Su Kim
- Department of Electronic Materials Engineering, Kwangwoon University, Gwangun-ro 20, Nowon-gu, Seoul 01897, Republic of Korea;
| | - Hamin Park
- Department of Electronic Engineering, Kwangwoon University, Gwangun-ro 20, Nowon-gu, Seoul 01897, Republic of Korea;
| | - Won-Ju Cho
- Department of Electronic Materials Engineering, Kwangwoon University, Gwangun-ro 20, Nowon-gu, Seoul 01897, Republic of Korea;
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