1
|
Ma X, Zhou Y, Li R, Zhao S, Zhang M. Ultralow Power Optoelectronic Memtransistors Based on Vertical WS 2/In 2Se 3 van der Waals Heterostructures. ACS APPLIED MATERIALS & INTERFACES 2025; 17:18582-18591. [PMID: 40085138 DOI: 10.1021/acsami.4c21946] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 03/16/2025]
Abstract
Memtransistors composed of 2D van der Waals (vdW) heterostructures are crucial for constructing artificial synaptic devices and realizing neuromorphic computing. The functional integration containing ultralow power, nonvolatile memory, and biomimetic synaptic behavior endows such devices with broad prospects. Here, we develop an optoelectronic memtransistor based on the WS2/In2Se3 vdW heterostructure and realize significant optical and electrical synaptic properties, which can simulate both short-range plasticity (STP) and long-range plasticity (LTP) of biological synapses. Under optical stimulation, the device demonstrates an ultralow power consumption (only 7.7 aJ per spike) significantly lower than biological synapses, indicating the application potential in large-scale neuromorphic hardware. Combining optical and electrical stimuli, we can perform multiple logic operations by controlling the optical and electrical inputs of the WS2/In2Se3-based memtransistor. Besides, simulated recognition utilizing the Modified National Institute of Standards and Technology data set can achieve a recognition accuracy of 85.41%. Notably, this accuracy can remain above 80% even with the introduction of Gaussian noise. These results demonstrate the promising potential of WS2/In2Se3-based memtransistors in future neuromorphic computing.
Collapse
Affiliation(s)
- Xiudong Ma
- College of Physics and Optoelectronic Engineering, Ocean University of China, Qingdao, Shandong 266100, China
| | - Yumeng Zhou
- College of Physics and Optoelectronic Engineering, Ocean University of China, Qingdao, Shandong 266100, China
| | - Ru Li
- Qingdao Institute of Bioenergy and Bioprocess Technology, Chinese Academy of Sciences, Qingdao, Shandong 266101, China
| | - Shangzhou Zhao
- College of Physics and Optoelectronic Engineering, Ocean University of China, Qingdao, Shandong 266100, China
| | - Mingjia Zhang
- College of Physics and Optoelectronic Engineering, Ocean University of China, Qingdao, Shandong 266100, China
- Engineering Research Center of Advanced Marine Physical Instruments and Equipment, Ministry of Education, Ocean University of China, Qingdao 266100, China
- Qingdao Key Laboratory of Optics and Optoelectronics, Ocean University of China, Qingdao 266100, China
| |
Collapse
|
2
|
Jang H, Lee J, Beak CJ, Biswas S, Lee SH, Kim H. Flexible Neuromorphic Electronics for Wearable Near-Sensor and In-Sensor Computing Systems. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2025; 37:e2416073. [PMID: 39828517 DOI: 10.1002/adma.202416073] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/21/2024] [Revised: 12/26/2024] [Indexed: 01/22/2025]
Abstract
Flexible neuromorphic architectures that emulate biological cognitive systems hold great promise for smart wearable electronics. To realize neuro-inspired sensing and computing electronics, artificial sensory neurons that detect and process external stimuli must be integrated with central nervous systems capable of parallel computation. In near-sensor computing, synaptic devices, and sensors are used to emulate sensory neurons and receptors, respectively. In contrast, in in-sensor computing, a single multifunctional device serves as both the receptor and neuron. Bio-inspired cognitive systems efficiently detect and process stimuli through data structuring techniques, significantly reducing data volume and enabling the extension of neuromorphic applications to smart wearable systems. To construct wearable near- and in-sensor computing, it is crucial to develop artificial sensory neurons and central nervous synapses that replicate the biological functionalities. Additionally, the integrated systems must exhibit high mechanical flexibility and integration density. This review addresses research on flexible bio-inspired cognitive systems, classified into near- and in-sensor computing. It covers fundamental aspects, including biological cognitive processes, the required components, and the structures for each component, as well as applications for wearable smart systems. Finally, it offers perspectives on future research directions for flexible neuromorphic electronics in smart wearable systems connected to the next-generation Internet of Things.
Collapse
Affiliation(s)
- Hyowon Jang
- School of Electrical and Computer Engineering, Center for Smart Sensor System of Seoul (CS4), University of Seoul, 163 Seoulsiripdaero, Dongdaemun-gu, Seoul, 02504, Republic of Korea
| | - Jihwan Lee
- School of Advanced Fusion Studies, Department of Intelligent Semiconductor Engineering, University of Seoul, 163 Seoulsiripdaero, Dongdaemun-gu, Seoul, 02504, Republic of Korea
| | - Chang-Jae Beak
- School of Advanced Fusion Studies, Department of Intelligent Semiconductor Engineering, University of Seoul, 163 Seoulsiripdaero, Dongdaemun-gu, Seoul, 02504, Republic of Korea
| | - Swarup Biswas
- School of Electrical and Computer Engineering, Center for Smart Sensor System of Seoul (CS4), University of Seoul, 163 Seoulsiripdaero, Dongdaemun-gu, Seoul, 02504, Republic of Korea
| | - Sin-Hyung Lee
- School of Advanced Fusion Studies, Department of Intelligent Semiconductor Engineering, University of Seoul, 163 Seoulsiripdaero, Dongdaemun-gu, Seoul, 02504, Republic of Korea
| | - Hyeok Kim
- School of Electrical and Computer Engineering, Center for Smart Sensor System of Seoul (CS4), University of Seoul, 163 Seoulsiripdaero, Dongdaemun-gu, Seoul, 02504, Republic of Korea
| |
Collapse
|
3
|
Mojumder MRH, Kim S, Yu C. Soft Artificial Synapse Electronics. RESEARCH (WASHINGTON, D.C.) 2025; 8:0582. [PMID: 39877465 PMCID: PMC11772661 DOI: 10.34133/research.0582] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 10/22/2024] [Revised: 12/07/2024] [Accepted: 12/22/2024] [Indexed: 01/31/2025]
Abstract
Soft electronics, known for their bendable, stretchable, and flexible properties, are revolutionizing fields such as biomedical sensing, consumer electronics, and robotics. A primary challenge in this domain is achieving low power consumption, often hampered by the limitations of the conventional von Neumann architecture. In response, the development of soft artificial synapses (SASs) has gained substantial attention. These synapses seek to replicate the signal transmission properties of biological synapses, offering an innovative solution to this challenge. This review explores the materials and device architectures integral to SAS fabrication, emphasizing flexibility and stability under mechanical deformation. Various architectures, including floating-gate dielectric, ferroelectric-gate dielectric, and electrolyte-gate dielectric, are analyzed for effective weight control in SASs. The utilization of organic and low-dimensional materials is highlighted, showcasing their plasticity and energy-efficient operation. Furthermore, the paper investigates the integration of functionality into SASs, particularly focusing on devices that autonomously sense external stimuli. Functionalized SASs, capable of recognizing optical, mechanical, chemical, olfactory, and auditory cues, demonstrate promising applications in computing and sensing. A detailed examination of photo-functionalized, tactile-functionalized, and chemoreception-functionalized SASs reveals their potential in image recognition, tactile sensing, and chemosensory applications, respectively. This study highlights that SASs and functionalized SAS devices hold transformative potential for bioelectronics and sensing for soft-robotics applications; however, further research is necessary to address scalability, long-time stability, and utilizing functionalized SASs for prosthetics and in vivo applications through clinical adoption. By providing a comprehensive overview, this paper contributes to the understanding of SASs, bridging research gaps and paving the way toward transformative developments in soft electronics, biomimicking and biointegrated synapse devices, and integrated systems.
Collapse
Affiliation(s)
- Md. Rayid Hasan Mojumder
- Department of Electrical Engineering,
The Pennsylvania State University, University Park, PA 16802, USA
| | - Seongchan Kim
- Department of Electrical and Systems Engineering,
University of Pennsylvania, Philadelphia, PA 19104, USA
| | - Cunjiang Yu
- Department of Electrical and Computer Engineering,
University of Illinois, Urbana-Champaign, Urbana, IL 61801, USA
- Department of Materials Science and Engineering,
University of Illinois, Urbana-Champaign, Urbana, IL 61801, USA
- Department of Mechanical Science and Engineering,
University of Illinois, Urbana-Champaign, Urbana, IL 61801, USA
- Department of Bioengineering,
University of Illinois, Urbana-Champaign, Urbana, IL 61801, USA
- Materials Research Laboratory,
University of Illinois, Urbana-Champaign, Urbana, IL 61801, USA
- Beckman Institute for Advanced Science and Technology,
University of Illinois, Urbana-Champaign, Urbana, IL 61801, USA
- Nick Holonyak Micro and Nanotechnology Laboratory,
University of Illinois, Urbana-Champaign, Urbana, IL 61801, USA
| |
Collapse
|
4
|
Ding G, Li H, Zhao J, Zhou K, Zhai Y, Lv Z, Zhang M, Yan Y, Han ST, Zhou Y. Nanomaterials for Flexible Neuromorphics. Chem Rev 2024; 124:12738-12843. [PMID: 39499851 DOI: 10.1021/acs.chemrev.4c00369] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/07/2024]
Abstract
The quest to imbue machines with intelligence akin to that of humans, through the development of adaptable neuromorphic devices and the creation of artificial neural systems, has long stood as a pivotal goal in both scientific inquiry and industrial advancement. Recent advancements in flexible neuromorphic electronics primarily rely on nanomaterials and polymers owing to their inherent uniformity, superior mechanical and electrical capabilities, and versatile functionalities. However, this field is still in its nascent stage, necessitating continuous efforts in materials innovation and device/system design. Therefore, it is imperative to conduct an extensive and comprehensive analysis to summarize current progress. This review highlights the advancements and applications of flexible neuromorphics, involving inorganic nanomaterials (zero-/one-/two-dimensional, and heterostructure), carbon-based nanomaterials such as carbon nanotubes (CNTs) and graphene, and polymers. Additionally, a comprehensive comparison and summary of the structural compositions, design strategies, key performance, and significant applications of these devices are provided. Furthermore, the challenges and future directions pertaining to materials/devices/systems associated with flexible neuromorphics are also addressed. The aim of this review is to shed light on the rapidly growing field of flexible neuromorphics, attract experts from diverse disciplines (e.g., electronics, materials science, neurobiology), and foster further innovation for its accelerated development.
Collapse
Affiliation(s)
- Guanglong Ding
- State Key Laboratory of Radio Frequency Heterogeneous Integration, Shenzhen University, Shenzhen 518060, PR China
- College of Electronics and Information Engineering, Shenzhen University, Shenzhen 518060, PR China
| | - Hang Li
- Institute for Advanced Study, Shenzhen University, Shenzhen 518060, PR China
| | - JiYu Zhao
- Institute for Advanced Study, Shenzhen University, Shenzhen 518060, PR China
- State Key Laboratory of Fine Chemicals, Frontiers Science Center for Smart Materials, Dalian University of Technology, Dalian 116024, China
| | - Kui Zhou
- Institute for Advanced Study, Shenzhen University, Shenzhen 518060, PR China
- The Construction Quality Supervision and Inspection Station of Zhuhai, Zhuhai 519000, PR China
| | - Yongbiao Zhai
- College of Electronics and Information Engineering, Shenzhen University, Shenzhen 518060, PR China
| | - Ziyu Lv
- College of Electronics and Information Engineering, Shenzhen University, Shenzhen 518060, PR China
| | - Meng Zhang
- State Key Laboratory of Radio Frequency Heterogeneous Integration, Shenzhen University, Shenzhen 518060, PR China
- College of Electronics and Information Engineering, Shenzhen University, Shenzhen 518060, PR China
| | - Yan Yan
- State Key Laboratory of Radio Frequency Heterogeneous Integration, Shenzhen University, Shenzhen 518060, PR China
- College of Electronics and Information Engineering, Shenzhen University, Shenzhen 518060, PR China
| | - Su-Ting Han
- Department of Applied Biology and Chemical Technology, The Hong Kong Polytechnic University, Hung Hom 999077, Hong Kong SAR PR China
| | - Ye Zhou
- State Key Laboratory of Radio Frequency Heterogeneous Integration, Shenzhen University, Shenzhen 518060, PR China
- Institute for Advanced Study, Shenzhen University, Shenzhen 518060, PR China
| |
Collapse
|
5
|
Wang X, Zhang L, Zhao Y, Qin Z, Hu B, Zhang L, Jiang Y, Wang Q, Liang Z, Tang X, Wu J, Cao F, Bu L, Lei B, Lu G. Electro-Optically Configurable Synaptic Transistors With Cluster-Induced Photoactive Dielectric Layer for Visual Simulation and Biomotor Stimuli. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2406977. [PMID: 39223900 DOI: 10.1002/adma.202406977] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/16/2024] [Revised: 07/24/2024] [Indexed: 09/04/2024]
Abstract
The integration of visual simulation and biorehabilitation devices promises great applications for sustainable electronics, on-demand integration and neuroscience. However, achieving a multifunctional synergistic biomimetic system with tunable optoelectronic properties at the individual device level remains a challenge. Here, an electro-optically configurable transistor employing conjugated-polymer as semiconductor layer and an insulating polymer (poly(1,8-octanediol-co-citrate) (POC)) with clusterization-triggered photoactive properties as dielectric layer is shown. These devices realize adeptly transition from electrical to optical synapses, featuring multiwavelength and multilevel optical synaptic memory properties exceeding 3 bits. Utilizing enhanced optical memory, the images learning and memory function for visual simulation are achieved. Benefiting from rapid electrical response akin to biological muscle activation, increased actuation occurs under increased stimulus frequency of gate voltage. Additionally, the transistor on POC substrate can be effectively degraded in NaOH solution due to degradation of POC. Pioneeringly, the electro-optically configurability stems from light absorption and photoluminescence of the aggregation cluster in POC layer after 200 °C annealing. The enhancement of optical synaptic plasticity and integration of motion-activation functions within a single device opens new avenues at the intersection of optoelectronics, synaptic computing, and bioengineering.
Collapse
Affiliation(s)
- Xin Wang
- Frontier Institute of Science and Technology, State Key Laboratory of Electrical Insulation and Power Equipment, Xi'an Jiaotong University, Xi'an, 712046, China
| | - Liuyang Zhang
- Frontier Institute of Science and Technology, State Key Laboratory of Electrical Insulation and Power Equipment, Xi'an Jiaotong University, Xi'an, 712046, China
- Department of Respiratory and Critical Care Medicine, The Second Affiliated Hospital of Xi'an Jiaotong University, Xi'an, 710004, China
| | - Yi Zhao
- Frontier Institute of Science and Technology, State Key Laboratory of Electrical Insulation and Power Equipment, Xi'an Jiaotong University, Xi'an, 712046, China
| | - Zongze Qin
- Frontier Institute of Science and Technology, State Key Laboratory of Electrical Insulation and Power Equipment, Xi'an Jiaotong University, Xi'an, 712046, China
| | - Bin Hu
- Frontier Institute of Science and Technology, State Key Laboratory of Electrical Insulation and Power Equipment, Xi'an Jiaotong University, Xi'an, 712046, China
| | - Long Zhang
- Frontier Institute of Science and Technology, State Key Laboratory of Electrical Insulation and Power Equipment, Xi'an Jiaotong University, Xi'an, 712046, China
- Department of Respiratory and Critical Care Medicine, The Second Affiliated Hospital of Xi'an Jiaotong University, Xi'an, 710004, China
| | - Yihang Jiang
- Frontier Institute of Science and Technology, State Key Laboratory of Electrical Insulation and Power Equipment, Xi'an Jiaotong University, Xi'an, 712046, China
| | - Qingyu Wang
- Frontier Institute of Science and Technology, State Key Laboratory of Electrical Insulation and Power Equipment, Xi'an Jiaotong University, Xi'an, 712046, China
| | - Zechen Liang
- Frontier Institute of Science and Technology, State Key Laboratory of Electrical Insulation and Power Equipment, Xi'an Jiaotong University, Xi'an, 712046, China
| | - Xian Tang
- Frontier Institute of Science and Technology, State Key Laboratory of Electrical Insulation and Power Equipment, Xi'an Jiaotong University, Xi'an, 712046, China
| | - Jingpeng Wu
- Frontier Institute of Science and Technology, State Key Laboratory of Electrical Insulation and Power Equipment, Xi'an Jiaotong University, Xi'an, 712046, China
| | - Fan Cao
- Frontier Institute of Science and Technology, State Key Laboratory of Electrical Insulation and Power Equipment, Xi'an Jiaotong University, Xi'an, 712046, China
| | - Laju Bu
- School of Chemistry, Xi'an Jiaotong University, Xi'an, 712046, China
| | - Bo Lei
- Frontier Institute of Science and Technology, State Key Laboratory of Electrical Insulation and Power Equipment, Xi'an Jiaotong University, Xi'an, 712046, China
- Department of Respiratory and Critical Care Medicine, The Second Affiliated Hospital of Xi'an Jiaotong University, Xi'an, 710004, China
| | - Guanghao Lu
- Frontier Institute of Science and Technology, State Key Laboratory of Electrical Insulation and Power Equipment, Xi'an Jiaotong University, Xi'an, 712046, China
| |
Collapse
|
6
|
Lee W, Kim T, Kim H, Kim Y. Controlled Migration of Lithium Cations by Diamine Bridges in Water-Processable Polymer-Based Solid-State Electrolyte Memory Layers for Organic Synaptic Transistors. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2403645. [PMID: 39011779 DOI: 10.1002/adma.202403645] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/11/2024] [Revised: 05/30/2024] [Indexed: 07/17/2024]
Abstract
Synaptic transistors require sufficient retention (memory) performances of current signals to exactly mimic biological synapses. Ion migration has been proposed to achieve high retention characteristics but less attention has been paid to polymer-based solid-state electrolytes (SSEs) for organic synaptic transistors (OSTRs). Here, OSTRs with water-processable polymer-based SSEs, featuring ion migration-controllable molecular bridges, which are prepared by reactions of poly(4-styrenesulfonic acid) (PSSA), diethylenetriamine (DETA), and lithium hydroxide (LiOH) are demonstrated. The ion conductivity of PSSA:LiOH:DETA (1:0.4:X, PLiD) films is remarkably changed by the molar ratio (X) of DETA, which is attributed to the extended distances between the PSSA chains by the DETA bridges. The devices with the PLiD layers deliver noticeably changed hysteresis reaching an optimum at X = 0.2, leading to the longest retention of current signals upon single/double pulses. The long-term potentiation test confirms that the present OSTRs can gradually build up the postsynaptic current by gate pulses of -2 V, while the long-term depression can be adjusted by varying the depression gate pulses (≈0.2-1.2 V). The artificial neural network simulations disclose that the present OSTRs with the ion migration-controlled PLiD layers can perform synaptic processes with an accuracy of ≈96%.
Collapse
Affiliation(s)
- Woongki Lee
- Organic Nanoelectronics Laboratory and KNU Institute for Nanophotonics Applications (KINPA), Department of Chemical Engineering, Kyungpook National University, Daegu, 41566, Republic of Korea
- Department of Chemistry and Centre for Processable Electronics, Imperial College London, London, W12 0BZ, UK
| | - Taehoon Kim
- Organic Nanoelectronics Laboratory and KNU Institute for Nanophotonics Applications (KINPA), Department of Chemical Engineering, Kyungpook National University, Daegu, 41566, Republic of Korea
| | - Hwajeong Kim
- Organic Nanoelectronics Laboratory and KNU Institute for Nanophotonics Applications (KINPA), Department of Chemical Engineering, Kyungpook National University, Daegu, 41566, Republic of Korea
- Priority Research Center, Research Institute of Environmental Science & Technology, Kyungpook National University, Daegu, 41566, Republic of Korea
| | - Youngkyoo Kim
- Organic Nanoelectronics Laboratory and KNU Institute for Nanophotonics Applications (KINPA), Department of Chemical Engineering, Kyungpook National University, Daegu, 41566, Republic of Korea
| |
Collapse
|
7
|
Wu FC, Chen CY, Wang YW, You CB, Wang LY, Ruan J, Chou WY, Lai WC, Cheng HL. Modulating Neuromorphic Behavior of Organic Synaptic Electrolyte-Gated Transistors Through Microstructure Engineering and Potential Applications. ACS APPLIED MATERIALS & INTERFACES 2024; 16:41211-41222. [PMID: 39054697 PMCID: PMC11310909 DOI: 10.1021/acsami.4c05966] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/12/2024] [Revised: 06/03/2024] [Accepted: 07/17/2024] [Indexed: 07/27/2024]
Abstract
Organic synaptic transistors are a promising technology for advanced electronic devices with simultaneous computing and memory functions and for the application of artificial neural networks. In this study, the neuromorphic electrical characteristics of organic synaptic electrolyte-gated transistors are correlated with the microstructural and interfacial properties of the active layers. This is accomplished by utilizing a semiconducting/insulating polyblend-based pseudobilayer with embedded source and drain electrodes, referred to as PB-ESD architecture. Three variations of poly(3-hexylthiophene) (P3HT)/poly(methyl methacrylate) (PMMA) PB-ESD-based organic synaptic transistors are fabricated, each exhibiting distinct microstructures and electrical characteristics, thus serving excellent samples for exploring the critical factors influencing neuro-electrical properties. Poor microstructures of P3HT within the active layer and a flat active layer/ion-gel interface correspond to typical neuromorphic behaviors such as potentiated excitatory postsynaptic current (EPSC), paired-pulse facilitation (PPF), and short-term potentiation (STP). Conversely, superior microstructures of P3HT and a rough active layer/ion-gel interface correspond to significantly higher channel conductance and enhanced EPSC and PPF characteristics as well as long-term potentiation behavior. Such devices were further applied to the simulation of neural networks, which produced a good recognition accuracy. However, excessive PMMA penetration into the P3HT conducting channel leads to features of a depressed EPSC and paired-pulse depression, which are uncommon in organic synaptic transistors. The inclusion of a second gate electrode enables the as-prepared organic synaptic transistors to function as two-input synaptic logic gates, performing various logical operations and effectively mimicking neural modulation functions. Microstructure and interface engineering is an effective method to modulate the neuromorphic behavior of organic synaptic transistors and advance the development of bionic artificial neural networks.
Collapse
Affiliation(s)
- Fu-Chiao Wu
- Department
of Photonics, Meta-nanoPhotonics Center, National Cheng Kung University, Tainan 701, Taiwan
| | - Chun-Yu Chen
- Department
of Photonics, Meta-nanoPhotonics Center, National Cheng Kung University, Tainan 701, Taiwan
| | - Yu-Wu Wang
- Institute
of Photonics, National Changhua University
of Education, Changhua 500, Taiwan
| | - Chun-Bin You
- Department
of Photonics, Meta-nanoPhotonics Center, National Cheng Kung University, Tainan 701, Taiwan
| | - Li-Yun Wang
- Department
of Photonics, Meta-nanoPhotonics Center, National Cheng Kung University, Tainan 701, Taiwan
| | - Jrjeng Ruan
- Department
of Materials Science and Engineering, National
Cheng Kung University, Tainan 701, Taiwan
| | - Wei-Yang Chou
- Department
of Photonics, Meta-nanoPhotonics Center, National Cheng Kung University, Tainan 701, Taiwan
| | - Wei-Chih Lai
- Department
of Photonics, Meta-nanoPhotonics Center, National Cheng Kung University, Tainan 701, Taiwan
| | - Horng-Long Cheng
- Department
of Photonics, Meta-nanoPhotonics Center, National Cheng Kung University, Tainan 701, Taiwan
| |
Collapse
|
8
|
Zhang X, Liu D, Liu S, Cai Y, Shan L, Chen C, Chen H, Liu Y, Guo T, Chen H. Toward Intelligent Display with Neuromorphic Technology. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2401821. [PMID: 38567884 DOI: 10.1002/adma.202401821] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/02/2024] [Revised: 03/19/2024] [Indexed: 04/16/2024]
Abstract
In the era of the Internet and the Internet of Things, display technology has evolved significantly toward full-scene display and realistic display. Incorporating "intelligence" into displays is a crucial technical approach to meet the demands of this development. Traditional display technology relies on distributed hardware systems to achieve intelligent displays but encounters challenges stemming from the physical separation of sensing, processing, and light-emitting modules. The high energy consumption and data transformation delays limited the development of intelligence display, breaking the physical separation is crucial to overcoming the bottlenecks of intelligence display technology. Inspired by the biological neural system, neuromorphic technology with all-in-one features is widely employed across various fields. It proves effective in reducing system power consumption, facilitating frequent data transformation, and enabling cross-scene integration. Neuromorphic technology shows great potential to overcome display technology bottlenecks, realizing the full-scene display and realistic display with high efficiency and low power consumption. This review offers a comprehensive summary of recent advancements in the application of neuromorphic technology in displays, with a focus on interoperability. This work delves into its state-of-the-art designs and potential future developments aimed at revolutionizing display technology.
Collapse
Affiliation(s)
- Xianghong Zhang
- Institute of Optoelectronic Display, National and Local United Engineering Lab of Flat Panel Display Technology, Fuzhou University, Fuzhou, 350002, China
- Fujian Science and Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou, Fujian, 350100, China
| | - Di Liu
- Institute of Optoelectronic Display, National and Local United Engineering Lab of Flat Panel Display Technology, Fuzhou University, Fuzhou, 350002, China
- Fujian Science and Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou, Fujian, 350100, China
| | - Shuai Liu
- Institute of Optoelectronic Display, National and Local United Engineering Lab of Flat Panel Display Technology, Fuzhou University, Fuzhou, 350002, China
- Fujian Science and Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou, Fujian, 350100, China
| | - Yongjie Cai
- Institute of Optoelectronic Display, National and Local United Engineering Lab of Flat Panel Display Technology, Fuzhou University, Fuzhou, 350002, China
- Fujian Science and Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou, Fujian, 350100, China
| | - Liuting Shan
- Institute of Optoelectronic Display, National and Local United Engineering Lab of Flat Panel Display Technology, Fuzhou University, Fuzhou, 350002, China
- Fujian Science and Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou, Fujian, 350100, China
| | - Cong Chen
- Institute of Optoelectronic Display, National and Local United Engineering Lab of Flat Panel Display Technology, Fuzhou University, Fuzhou, 350002, China
- Fujian Science and Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou, Fujian, 350100, China
| | - Huimei Chen
- Institute of Optoelectronic Display, National and Local United Engineering Lab of Flat Panel Display Technology, Fuzhou University, Fuzhou, 350002, China
- Fujian Science and Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou, Fujian, 350100, China
| | - Yaqian Liu
- School of Electronics and Information, Zhengzhou University of Light Industry, Zhengzhou, Henan, 450002, China
| | - Tailiang Guo
- Institute of Optoelectronic Display, National and Local United Engineering Lab of Flat Panel Display Technology, Fuzhou University, Fuzhou, 350002, China
- Fujian Science and Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou, Fujian, 350100, China
| | - Huipeng Chen
- Institute of Optoelectronic Display, National and Local United Engineering Lab of Flat Panel Display Technology, Fuzhou University, Fuzhou, 350002, China
- Fujian Science and Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou, Fujian, 350100, China
| |
Collapse
|
9
|
Ebrahimi M, Norouzi P, Ghasemi JB, Moosavi-Movahedi AA, Noroozifar M, Salahandish R. Advancing chirality analysis through enhanced enantiomer characterization and quantification via fast Fourier transform capacitance voltammetry. Sci Rep 2023; 13:16739. [PMID: 37798351 PMCID: PMC10556018 DOI: 10.1038/s41598-023-43945-7] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 08/04/2023] [Accepted: 09/30/2023] [Indexed: 10/07/2023] Open
Abstract
The exploration of the chiral configurations of enantiomers represents a highly intriguing realm of scientific inquiry due to the distinct roles played by each enantiomer (D and L) in chemical reactions and their practical utilities. This study introduces a pioneering analytical methodology, termed fast Fourier transform capacitance voltammetry (FFT-CPV), in conjunction with principal component analysis (PCA), for the identification and quantification of the chiral forms of tartaric acid (TA), serving as a representative model system for materials exhibiting pronounced chiral characteristics. The proposed methodology relies on the principle of chirality, wherein the capacitance signal generated by the adsorption of D-TA and L-TA onto the surface of a platinum electrode (Pt-electrode) in an acidic solution is harnessed. The capacitance voltammograms were meticulously recorded under optimized experimental conditions. To compile the final dataset for the analyte, the average of the FFT capacitance voltammograms of the acidic solution (without the presence of the analyte) was subtracted from those containing the analyte. A distinct arrangement was obtained by employing PCA as a linear data transformation method, representing D-TA and L-TA in a two/three-dimensional space. The outcomes of the study reveal the successful detection of the two chiral forms of TA with a considerable degree of precision and reproducibility. Moreover, the proposed method facilitated the establishment of two linear response ranges for the concentration values of each enantiomer, spanning from 1 to 20 µM, and 50 to 500 µM. The respective detection limits were also determined to be 0.4 µM for L-TA and 1.3 µM for D-TA. These findings underscore the satisfactory sensitivity and efficiency of the proposed method in both qualitative and quantitative assessments of the chiral forms of TA.
Collapse
Affiliation(s)
- Mehrnaz Ebrahimi
- Chemistry Faculty, School of Sciences, University of Tehran, POB 14155-6455, Tehran, Iran
| | - Parviz Norouzi
- Chemistry Faculty, School of Sciences, University of Tehran, POB 14155-6455, Tehran, Iran.
- Laboratory of Advanced Biotechnologies for Health Assessments (Lab-HA), Lassonde School of Engineering, York University, Toronto, M3J 1P3, Canada.
- Department of Electrical Engineering and Computer Science, York University, 4700 Keele Street, Toronto, ON, M3J 1P3, Canada.
| | - Jahan B Ghasemi
- Chemistry Faculty, School of Sciences, University of Tehran, POB 14155-6455, Tehran, Iran
| | | | - Meissam Noroozifar
- Department of Physical and Environmental Sciences, University of Toronto Scarborough, 1265 Military Trail, Toronto, ON, M1C 1A4, Canada
| | - Razieh Salahandish
- Laboratory of Advanced Biotechnologies for Health Assessments (Lab-HA), Lassonde School of Engineering, York University, Toronto, M3J 1P3, Canada.
- Department of Electrical Engineering and Computer Science, York University, 4700 Keele Street, Toronto, ON, M3J 1P3, Canada.
| |
Collapse
|
10
|
Wang X, Ran Y, Li X, Qin X, Lu W, Zhu Y, Lu G. Bio-inspired artificial synaptic transistors: evolution from innovative basic units to system integration. MATERIALS HORIZONS 2023; 10:3269-3292. [PMID: 37312536 DOI: 10.1039/d3mh00216k] [Citation(s) in RCA: 10] [Impact Index Per Article: 5.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
The investigation of transistor-based artificial synapses in bioinspired information processing is undergoing booming exploration, and is the stable building block for brain-like computing. Given that the storage and computing separation architecture of von Neumann construction is not conducive to the current explosive information processing, it is critical to accelerate the connection between hardware systems and software simulations of intelligent synapses. So far, various works based on a transistor-based synaptic system successfully simulated functions similar to biological nerves in the human brain. However, the influence of the semiconductor and the device structural design on synaptic properties is still poorly linked. This review concretely emphasizes the recent advances in the novel structure design of semiconductor materials and devices used in synaptic transistors, not only from a single multifunction synaptic device but also to system application with various connected routes and related working mechanisms. Finally, crises and opportunities in transistor-based synaptic interconnection are discussed and predicted.
Collapse
Affiliation(s)
- Xin Wang
- Frontier Institute of Science and Technology, State Key Laboratory of Electrical Insulation and Power Equipment, Xi'an Jiaotong University, Xi'an 710054, P. R. China.
| | - Yixin Ran
- Frontier Institute of Science and Technology, State Key Laboratory of Electrical Insulation and Power Equipment, Xi'an Jiaotong University, Xi'an 710054, P. R. China.
| | - Xiaoqian Li
- Shandong Technology Center of Nanodevices and Integration, School of Microelectronics, Shandong University, Jinan, Shandong Province, 250100, P. R. China
| | - Xinsu Qin
- Frontier Institute of Science and Technology, State Key Laboratory of Electrical Insulation and Power Equipment, Xi'an Jiaotong University, Xi'an 710054, P. R. China.
| | - Wanlong Lu
- Frontier Institute of Science and Technology, State Key Laboratory of Electrical Insulation and Power Equipment, Xi'an Jiaotong University, Xi'an 710054, P. R. China.
| | - Yuanwei Zhu
- Frontier Institute of Science and Technology, State Key Laboratory of Electrical Insulation and Power Equipment, Xi'an Jiaotong University, Xi'an 710054, P. R. China.
| | - Guanghao Lu
- Frontier Institute of Science and Technology, State Key Laboratory of Electrical Insulation and Power Equipment, Xi'an Jiaotong University, Xi'an 710054, P. R. China.
| |
Collapse
|