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Patil AR, Dongale TD, Pedanekar RS, Sutar SS, Kamat RK, Rajpure KY. Multilevel resistive switching in hydrothermally synthesized FeWO 4 thin film-based memristive device for non-volatile memory application. J Colloid Interface Sci 2024; 669:444-457. [PMID: 38723533 DOI: 10.1016/j.jcis.2024.04.222] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 01/08/2024] [Revised: 04/19/2024] [Accepted: 04/30/2024] [Indexed: 05/27/2024]
Abstract
The memristors offer significant advantages as a key element in non-volatile and brain-inspired neuromorphic systems because of their salient features such as remarkable endurance, ability to store multiple bits, fast operation speed, and extremely low energy usage. This work reports the resistive switching (RS) characteristics of the hydrothermally synthesized iron tungstate (FeWO4) based thin film memristive device. The detailed physicochemical analysis was investigated using Rietveld's refinement, X-ray photoelectron spectroscopy (XPS), field emission scanning electron microscopy (FE-SEM), and transmission electron microscopy (TEM) techniques. The fabricated Ag/FWO/FTO memristive device exhibits bipolar resistive switching (BRS) behavior. In addition, the devices exhibit negative differential resistance (NDR) at both positive and negative bias. The charge-flux relation portrayed the non-ideal or memristive nature of the devices. The reliability in the RS process was analyzed in detail using Weibull distribution and time series analysis techniques. The device exhibits stable and multilevel endurance and retention characteristics which demonstrates the suitability of the device for the high-density non-volatile memory application. The current conduction of the device was dominated by Ohmic and trap controlled-space charge limited current (TC-SCLC) mechanisms and filamentary RS process responsible for the BRS in the device. In a nutshell, the present investigations reveal the potential use of the iron tungstate for the fabrication of memristive devices for the non-volatile memory application.
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Affiliation(s)
- Amitkumar R Patil
- Electrochemical Materials Laboratory, Department of Physics, Shivaji University, Kolhapur 416004, India
| | - Tukaram D Dongale
- Computational Electronics and Nanoscience Research Laboratory, School of Nanoscience and Biotechnology, Shivaji University, Kolhapur 416004, India
| | - Rupesh S Pedanekar
- Electrochemical Materials Laboratory, Department of Physics, Shivaji University, Kolhapur 416004, India
| | - Santosh S Sutar
- Yashwantrao Chavan School of Rural Development, Shivaji University, Kolhapur 416004, India
| | - Rajanish K Kamat
- Department of Electronics, Shivaji University, Kolhapur 416004, India; Dr. Homi Bhabha State University, 15, Madam Cama Road, Mumbai 400032, India
| | - Keshav Y Rajpure
- Electrochemical Materials Laboratory, Department of Physics, Shivaji University, Kolhapur 416004, India.
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2
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Fang J, Tang Z, Lai XC, Qiu F, Jiang YP, Liu QX, Tang XG, Sun QJ, Zhou YC, Fan JM, Gao J. New-Style Logic Operation and Neuromorphic Computing Enabled by Optoelectronic Artificial Synapses in an MXene/Y:HfO 2 Ferroelectric Memristor. ACS APPLIED MATERIALS & INTERFACES 2024. [PMID: 38833382 DOI: 10.1021/acsami.4c05316] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/06/2024]
Abstract
Today's computing systems, to meet the enormous demands of information processing, have driven the development of brain-inspired neuromorphic systems. However, there are relatively few optoelectronic devices in most brain-inspired neuromorphic systems that can simultaneously regulate the conductivity through both optical and electrical signals. In this work, the Au/MXene/Y:HfO2/FTO ferroelectric memristor as an optoelectronic artificial synaptic device exhibited both digital and analog resistance switching (RS) behaviors under different voltages with a good switching ratio (>103). Under optoelectronic conditions, optimal weight update parameters and an enhanced algorithm achieved 97.1% recognition accuracy in convolutional neural networks. A new logic gate circuit specifically designed for optoelectronic inputs was established. Furthermore, the device integrates the impact of relative humidity to develop an innovative three-person voting mechanism with a veto power. These results provide a feasible approach for integrating optoelectronic artificial synapses with logic-based computing devices.
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Affiliation(s)
- Junlin Fang
- School of Physics and Optoelectric Engineering, Guangzhou Higher Education Mega Center, Guangdong University of Technology, Guangzhou 510006, P. R. China
| | - Zhenhua Tang
- School of Physics and Optoelectric Engineering, Guangzhou Higher Education Mega Center, Guangdong University of Technology, Guangzhou 510006, P. R. China
| | - Xi-Cai Lai
- School of Physics and Optoelectric Engineering, Guangzhou Higher Education Mega Center, Guangdong University of Technology, Guangzhou 510006, P. R. China
| | - Fan Qiu
- School of Physics and Optoelectric Engineering, Guangzhou Higher Education Mega Center, Guangdong University of Technology, Guangzhou 510006, P. R. China
| | - Yan-Ping Jiang
- School of Physics and Optoelectric Engineering, Guangzhou Higher Education Mega Center, Guangdong University of Technology, Guangzhou 510006, P. R. China
| | - Qiu-Xiang Liu
- School of Physics and Optoelectric Engineering, Guangzhou Higher Education Mega Center, Guangdong University of Technology, Guangzhou 510006, P. R. China
| | - Xin-Gui Tang
- School of Physics and Optoelectric Engineering, Guangzhou Higher Education Mega Center, Guangdong University of Technology, Guangzhou 510006, P. R. China
| | - Qi-Jun Sun
- School of Physics and Optoelectric Engineering, Guangzhou Higher Education Mega Center, Guangdong University of Technology, Guangzhou 510006, P. R. China
| | - Yi-Chun Zhou
- School of Advanced Materials and Nanotechnology, Xidian University, Xian 710126, China
| | - Jing-Min Fan
- School of Automation, Guangdong University of Technology, Guangzhou 510006, China
| | - Ju Gao
- Department of Physics, The University of Hong Kong, Hong Kong 999077, P. R. China
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3
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Chen J, Liu X, Liu C, Tang L, Bu T, Jiang B, Qing Y, Xie Y, Wang Y, Shan Y, Li R, Ye C, Liao L. Reconfigurable Ag/HfO 2/NiO/Pt Memristors with Stable Synchronous Synaptic and Neuronal Functions for Renewable Homogeneous Neuromorphic Computing System. NANO LETTERS 2024; 24:5371-5378. [PMID: 38647348 DOI: 10.1021/acs.nanolett.4c01319] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/25/2024]
Abstract
Artificial synapses and bionic neurons offer great potential in highly efficient computing paradigms. However, complex requirements for specific electronic devices in neuromorphic computing have made memristors face the challenge of process simplification and universality. Herein, reconfigurable Ag/HfO2/NiO/Pt memristors are designed for feasible switching between volatile and nonvolatile modes by compliance current controlled Ag filaments, which enables stable and reconfigurable synaptic and neuronal functions. A neuromorphic computing system effectively replicates the biological synaptic weight alteration and continuously accomplishes excitation and reset of artificial neurons, which consist of bionic synapses and artificial neurons based on isotype Ag/HfO2/NiO/Pt memristors. This reconfigurable electrical performance of the Ag/HfO2/NiO/Pt memristors takes advantage of simplified hardware design and delivers integrated circuits with high density, which exhibits great potency for future neural networks.
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Affiliation(s)
- Jiaqi Chen
- Key Laboratory of Intelligent Sensing System and Security, Ministry of Education, School of Microelectronics, Hubei University, Wuhan 430062, China
| | - Xingqiang Liu
- Changsha Semiconductor Technology and Application Research Institute, Engineering Research Center of Advanced Semiconductor Technology, College of Semiconductor (College of Integrated Circuit), Hunan University, Changsha 410082, China
| | - Chang Liu
- Key Laboratory for Micro/Nano Optoelectronic Devices of Ministry of Education & Hunan Provincial Key Laboratory of Low-Dimensional Structural Physics and Devices, School of Physics and Electronics, Hunan University, Changsha 410082, China
| | - Lin Tang
- Key Laboratory for Micro/Nano Optoelectronic Devices of Ministry of Education & Hunan Provincial Key Laboratory of Low-Dimensional Structural Physics and Devices, School of Physics and Electronics, Hunan University, Changsha 410082, China
| | - Tong Bu
- Key Laboratory for Micro/Nano Optoelectronic Devices of Ministry of Education & Hunan Provincial Key Laboratory of Low-Dimensional Structural Physics and Devices, School of Physics and Electronics, Hunan University, Changsha 410082, China
| | - Bei Jiang
- Key Laboratory of Intelligent Sensing System and Security, Ministry of Education, School of Microelectronics, Hubei University, Wuhan 430062, China
- Changsha Semiconductor Technology and Application Research Institute, Engineering Research Center of Advanced Semiconductor Technology, College of Semiconductor (College of Integrated Circuit), Hunan University, Changsha 410082, China
| | - Yahui Qing
- Key Laboratory of Intelligent Sensing System and Security, Ministry of Education, School of Microelectronics, Hubei University, Wuhan 430062, China
| | - Yulu Xie
- Key Laboratory of Intelligent Sensing System and Security, Ministry of Education, School of Microelectronics, Hubei University, Wuhan 430062, China
| | - Yong Wang
- Key Laboratory of Intelligent Sensing System and Security, Ministry of Education, School of Microelectronics, Hubei University, Wuhan 430062, China
| | - Yongtao Shan
- Key Laboratory of Intelligent Sensing System and Security, Ministry of Education, School of Microelectronics, Hubei University, Wuhan 430062, China
| | - Ruxin Li
- Key Laboratory of Intelligent Sensing System and Security, Ministry of Education, School of Microelectronics, Hubei University, Wuhan 430062, China
| | - Cong Ye
- Key Laboratory of Intelligent Sensing System and Security, Ministry of Education, School of Microelectronics, Hubei University, Wuhan 430062, China
| | - Lei Liao
- Changsha Semiconductor Technology and Application Research Institute, Engineering Research Center of Advanced Semiconductor Technology, College of Semiconductor (College of Integrated Circuit), Hunan University, Changsha 410082, China
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Diao Y, Yang F, Jia Y, Su M, Hu J, Sun J, Jiang D, Wang D, Pu Y, Zhao Y, Sun B. Transmission Mechanism and Logical Operation of Graphene-Doped Poly(vinyl alcohol) Composite-Based Memristor. ACS APPLIED MATERIALS & INTERFACES 2024; 16:2477-2488. [PMID: 38185994 DOI: 10.1021/acsami.3c14581] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 01/09/2024]
Abstract
Memristors are considered the best candidates for nonvolatile memory and advanced computing technologies, and polymer and two-dimensional (2D) materials have been developed as functional layer materials in memristors with high-performance resistive switching characteristics. In this work, a polymer memristor with a graphene (Gr)-doped poly(vinyl alcohol) (PVA) composite acting as the functional layer was prepared. The memristor device exhibited superior performance with good retention and a comparatively large ON/OFF ratio at room temperature. Additionally, excellent logic operations were achieved. These satisfactory properties can be attributed to trap-induced carrier trapping and detrapping. In addition, the device exhibited stable bipolar resistive switching behavior over a moderate temperature range. This work provides insight into the transmission mechanism of polymer-based memristors and the reasons why they become unstable at high temperatures, demonstrating the potential applications of PVA-Gr-based polymer memristors as logic circuit units in integrated chips and artificial intelligence.
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Affiliation(s)
- Yangmin Diao
- School of Materials Science and Engineering, Key Laboratory of Advanced Technology of Materials (Ministry of Education of China), Southwest Jiaotong University, Chengdu 610031, China
| | - Feng Yang
- Key Laboratory of Magnetic Suspension Technology and Maglev Vehicle (Ministry of Education of China), School of Electrical Engineering, Southwest Jiaotong University, Chengdu, Sichuan 610031, China
| | - Yongfang Jia
- School of Materials Science and Engineering, Key Laboratory of Advanced Technology of Materials (Ministry of Education of China), Southwest Jiaotong University, Chengdu 610031, China
| | - Minghui Su
- School of Materials Science and Engineering, Key Laboratory of Advanced Technology of Materials (Ministry of Education of China), Southwest Jiaotong University, Chengdu 610031, China
| | - Junda Hu
- Key Laboratory of Magnetic Suspension Technology and Maglev Vehicle (Ministry of Education of China), School of Electrical Engineering, Southwest Jiaotong University, Chengdu, Sichuan 610031, China
| | - Jianwei Sun
- School of Materials Science and Engineering, Key Laboratory of Advanced Technology of Materials (Ministry of Education of China), Southwest Jiaotong University, Chengdu 610031, China
| | - Dongheng Jiang
- School of Materials Science and Engineering, Key Laboratory of Advanced Technology of Materials (Ministry of Education of China), Southwest Jiaotong University, Chengdu 610031, China
| | - Dan Wang
- State Key Laboratory of Organic - Inorganic Composites, Beijing University of Chemical Technology, Beijing 100029, China
| | - Yuan Pu
- State Key Laboratory of Organic - Inorganic Composites, Beijing University of Chemical Technology, Beijing 100029, China
| | - Yong Zhao
- Key Laboratory of Magnetic Suspension Technology and Maglev Vehicle (Ministry of Education of China), School of Electrical Engineering, Southwest Jiaotong University, Chengdu, Sichuan 610031, China
- Fujian Provincial Collaborative Innovation Center for Advanced High-Field Superconducting Materials and Engineering, College of Physics and Energy, Fujian Normal University, Fuzhou, Fujian 350117, China
| | - Bai Sun
- Frontier Institute of Science and Technology (FIST), Xi'an Jiaotong University, Xi'an, Shaanxi 710049, China
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Kim H, Han G, Cho S, Woo J, Lee D. Internal Resistor Effect of Multilayer-Structured Synaptic Device for Low-Power Operation. NANOMATERIALS (BASEL, SWITZERLAND) 2024; 14:201. [PMID: 38251164 DOI: 10.3390/nano14020201] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/25/2023] [Revised: 01/06/2024] [Accepted: 01/14/2024] [Indexed: 01/23/2024]
Abstract
A synaptic device with a multilayer structure is proposed to reduce the operating power of neuromorphic computing systems while maintaining a high-density integration. A simple metal-insulator-metal (MIM)-structured multilayer synaptic device is developed using an 8-inch wafer-based and complementary metal-oxide-semiconductor (CMOS) fabrication process. The three types of MIM-structured synaptic devices are compared to assess their effects on reducing the operating power. The obtained results exhibited low-power operation owing to the inserted layers acting as an internal resistor. The modulated operational conductance level and simple MIM structure demonstrate the feasibility of implementing both low-power operation and high-density integration in multilayer synaptic devices.
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Affiliation(s)
- Hyejin Kim
- Department of Electronic Materials Engineering, Kwangwoon University, Seoul 01897, Republic of Korea
| | - Geonhui Han
- Department of Electronic Materials Engineering, Kwangwoon University, Seoul 01897, Republic of Korea
| | - Seojin Cho
- Department of Electronic Materials Engineering, Kwangwoon University, Seoul 01897, Republic of Korea
| | - Jiyong Woo
- School of Electronic and Electrical Engineering, Kyungpook National University, Daegu 41566, Republic of Korea
| | - Daeseok Lee
- Department of Electronic Materials Engineering, Kwangwoon University, Seoul 01897, Republic of Korea
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Li X, Feng Z, Zou J, Wu Z, Xu Z, Yang F, Zhu Y, Dai Y. Resistive switching modulation by incorporating thermally enhanced layer in HfO 2-based memristor. NANOTECHNOLOGY 2023; 35:035703. [PMID: 37852218 DOI: 10.1088/1361-6528/ad0486] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/04/2023] [Accepted: 10/18/2023] [Indexed: 10/20/2023]
Abstract
Oxide-based memristors by incorporating thermally enhanced layer (TEL) have showed great potential in electronic devices for high-efficient and high-density neuromorphic computing owing to the improvement of multilevel resistive switching. However, research on the mechanism of resistive switching regulation is still lacking. In this work, based on the method of finite element numerical simulation analysis, a bilayer oxide-based memristor Pt/HfO2(5 nm)/Ta2O5(5 nm)/Pt with the Ta2O5TEL was proposed. The oxygen vacancy concentrates distribution shows that the fracture of conductive filaments (CF) is at the interface where the local temperature is the highest during the reset process. The multilevel resistive switching properties were also obtained by applying different stop voltages. The fracture gap of CF can be enlarged with the increase of the stopping voltage, which is attributed to the heat-gathering ability of the TEL. Moreover, it was found that the fracture position of oxygen CF is dependent on the thickness of TEL, which exhibits a modulation of device RS performance. These results provide a theoretical guidance on the suitability of memristor devices for use in high-density memory and brain-actuated computer systems.
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Affiliation(s)
- Xing Li
- School of Integrated Circuits, Anhui University, Hefei, Anhui, 230601, People's Republic of China
| | - Zhe Feng
- School of Integrated Circuits, Anhui University, Hefei, Anhui, 230601, People's Republic of China
| | - Jianxun Zou
- School of Integrated Circuits, Anhui University, Hefei, Anhui, 230601, People's Republic of China
| | - Zuheng Wu
- School of Integrated Circuits, Anhui University, Hefei, Anhui, 230601, People's Republic of China
| | - Zuyu Xu
- School of Integrated Circuits, Anhui University, Hefei, Anhui, 230601, People's Republic of China
| | - Fei Yang
- School of Integrated Circuits, Anhui University, Hefei, Anhui, 230601, People's Republic of China
| | - Yunlai Zhu
- School of Integrated Circuits, Anhui University, Hefei, Anhui, 230601, People's Republic of China
| | - Yuehua Dai
- School of Integrated Circuits, Anhui University, Hefei, Anhui, 230601, People's Republic of China
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Lu Y, Yuan Y, Liu R, Liu T, Chen J, Wei L, Wu D, Zhang W, You B, Du J. Improved resistive switching performance and realized electric control of exchange bias in a NiO/HfO 2 bilayer structure. Phys Chem Chem Phys 2023; 25:24436-24447. [PMID: 37655730 DOI: 10.1039/d3cp03106c] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 09/02/2023]
Abstract
The fluctuation of switching parameters is unavoidable in conductive filaments (CFs)-type resistive switching (RS) devices, which restricts the application in resistive random-access memory. Here, we employed an uninsulated antiferromagnetic (AFM) NiO layer adhered to a well-insulating HfO2 layer to effectively suppress the RS fluctuation by achieving forming-free, narrower set voltage distribution, a more stable on/off ratio, and better endurance in comparison with single-HfO2-layer based RS devices. The conduction scaling behavior indicates that the NiO/HfO2 bilayer has a smaller scale parameter S0 (lateral dimension of the bottleneck for the CFs). Besides this, considering some preexisting conductive paths in the NiO layer, the electric fields and the formation/rupture of CFs can be highly localized, leading to reduced switching fluctuation and improved RS performance in the NiO/HfO2-based RS devices. Moreover, asymmetric I-V curves measured in a high resistance state (HRS) in positively and negatively biased regions and the electric modulation of exchange bias (EB) arising from the Co-NiO interfacial coupling are favorable for revealing the inherent mechanism for RS. The coexistence of RS and EB is also useful to the design of novel multifunctional memory devices.
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Affiliation(s)
- Yu Lu
- National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing 210093, P. R. China.
| | - Yuan Yuan
- National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing 210093, P. R. China.
| | - Ruobai Liu
- National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing 210093, P. R. China.
| | - Tianyu Liu
- National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing 210093, P. R. China.
| | - Jiarui Chen
- National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing 210093, P. R. China.
| | - Lujun Wei
- School of Science, Nanjing University of Posts and Telecommunications, Nanjing 210046, P. R. China
| | - Di Wu
- National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing 210093, P. R. China.
| | - Wei Zhang
- National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing 210093, P. R. China.
| | - Biao You
- National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing 210093, P. R. China.
| | - Jun Du
- National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing 210093, P. R. China.
- Collaborative Innovation Center of Advanced Microstructures, Nanjing 210093, P. R. China
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Cao Z, Sun B, Zhou G, Mao S, Zhu S, Zhang J, Ke C, Zhao Y, Shao J. Memristor-based neural networks: a bridge from device to artificial intelligence. NANOSCALE HORIZONS 2023; 8:716-745. [PMID: 36946082 DOI: 10.1039/d2nh00536k] [Citation(s) in RCA: 11] [Impact Index Per Article: 11.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/31/2023]
Abstract
Since the beginning of the 21st century, there is no doubt that the importance of artificial intelligence has been highlighted in many fields, among which the memristor-based artificial neural network technology is expected to break through the limitation of von Neumann so as to realize the replication of the human brain by enabling strong parallel computing ability and efficient data processing and become an important way towards the next generation of artificial intelligence. A new type of nanodevice, namely memristor, which is based on the variability of its resistance value, not only has very important applications in nonvolatile information storage, but also presents obsessive progressiveness in highly integrated circuits, making it one of the most promising circuit components in the post-Moore era. In particular, memristors can effectively simulate neural synapses and build neural networks; thus, they can be applied for the preparation of various artificial intelligence systems. This study reviews the research progress of memristors in artificial neural networks in detail and highlights the structural advantages and frontier applications of neural networks based on memristors. Finally, some urgent problems and challenges in current research are summarized and corresponding solutions and future development trends are put forward.
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Affiliation(s)
- Zelin Cao
- Frontier Institute of Science and Technology (FIST), Xi'an Jiaotong University, Xi'an, Shaanxi 710049, China.
- Shaanxi International Joint Research Center for Applied Technology of Controllable Neutron Source, School of Science, Xijing University, Xi'an 710123, China
| | - Bai Sun
- Frontier Institute of Science and Technology (FIST), Xi'an Jiaotong University, Xi'an, Shaanxi 710049, China.
| | - Guangdong Zhou
- College of Artificial Intelligence, Brain-inspired Computing & Intelligent Control of Chongqing Key Lab, Southwest University, Chongqing 400715, China
| | - Shuangsuo Mao
- Fujian Provincial Collaborative Innovation Center for Advanced High-Field Superconducting Materials and Engineering, Fujian Normal University, Fuzhou, Fujian 350117, China
| | - Shouhui Zhu
- School of Physical Science and Technology, Key Laboratory of Advanced Technology of Materials, Southwest Jiaotong University, Chengdu, Sichuan 610031, China
| | - Jie Zhang
- School of Electrical Engineering, Southwest Jiaotong University, Chengdu, Sichuan 610031, China
| | - Chuan Ke
- School of Electrical Engineering, Southwest Jiaotong University, Chengdu, Sichuan 610031, China
| | - Yong Zhao
- Fujian Provincial Collaborative Innovation Center for Advanced High-Field Superconducting Materials and Engineering, Fujian Normal University, Fuzhou, Fujian 350117, China
- School of Physical Science and Technology, Key Laboratory of Advanced Technology of Materials, Southwest Jiaotong University, Chengdu, Sichuan 610031, China
- School of Electrical Engineering, Southwest Jiaotong University, Chengdu, Sichuan 610031, China
| | - Jinyou Shao
- Frontier Institute of Science and Technology (FIST), Xi'an Jiaotong University, Xi'an, Shaanxi 710049, China.
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