Alloying Strategy in Cu-In-Ga-Se Quantum Dots for High Efficiency Quantum Dot Sensitized Solar Cells

Improving the efficiency of quantum dot-sensitized solar cells by increasing the QD loading amount

In quantum dot-sensitized solar cells (QDSCs), optimized quantum dot (QD) loading mode and high QD loading amount are prerequisites for great device performance. Capping ligand-induced self-assembly (CLIS) mode represents the mainstream QD loading strategy in the fabrication of high-efficiency QDSCs. However, there remain limitations in CLIS that constrain further enhancement of QD loading levels. This review illustrates the development of various QD loading methods in QDSCs, with an emphasis on the outstanding merits and bottlenecks of CLIS. Subsequently, thermodynamic and kinetic factors dominating QD loading behaviors in CLIS are analyzed theoretically. Upon understanding driving forces, resistances, and energy effects in a QD assembly process, various novel strategies for improving the QD loading amount in CLIS are summarized, and the related functional mechanism is established. Finally, the article concludes and outlooks some remaining academic issues to be solved, so that higher QD loading amount and efficiencies of QDSCs can be anticipated in the future.

Selected I-III-VI2 Semiconductors: Synthesis, Properties and Applications in Photovoltaic Cells

I-III-VI2 group quantum dots (QDs) have attracted high attention in photoelectronic conversion applications, especially for QD-sensitized solar cells (QDSSCs). This group of QDs has become the mainstream light-harvesting material in QDSSCs due to the ability to tune their electronic properties through size, shape, and composition and the ability to assemble the nanocrystals on the surface of TiO2. Moreover, these nanocrystals can be produced relatively easily via cost-effective solution-based synthetic methods and are composed of low-toxicity elements, which favors their integration into the market. This review describes the methods developed to prepare I-III-VI2 QDs (AgInS2 and CuInS2 were excluded) and control their optoelectronic properties to favor their integration into QDSSCs. Strategies developed to broaden the optoelectronic response and decrease the surface-defect states of QDs in order to promote the fast electron injection from QDs into TiO2 and achieve highly efficient QDSSCs will be described. Results show that heterostructures obtained after the sensitization of TiO2 with I-III-VI2 QDs could outperform those of other QDSSCs. The highest power-conversion efficiency (15.2%) was obtained for quinary Cu-In-Zn-Se-S QDs, along with a short-circuit density (JSC) of 26.30 mA·cm-2, an open-circuit voltage (VOC) of 802 mV and a fill factor (FF) of 71%.

Recent Progress in the Synthesis and Applications of Composite Photocatalysts: A Critical Review

Photocatalysis is an advanced technique that transforms solar energy into sustainable fuels and oxidizes pollutants via the aid of semiconductor photocatalysts. The main scientific and technological challenges for effective photocatalysis are the stability, robustness, and efficiency of semiconductor photocatalysts. For practical applications, researchers are trying to develop highly efficient and stable photocatalysts. Since the literature is highly scattered, it is urgent to write a critical review that summarizes the state-of-the-art progress in the design of a variety of semiconductor composite photocatalysts for energy and environmental applications. Herein, a comprehensive review is presented that summarizes an overview, history, mechanism, advantages, and challenges of semiconductor photocatalysis. Further, the recent advancements in the design of heterostructure photocatalysts including alloy quantum dots based composites, carbon based composites including carbon nanotubes, carbon quantum dots, graphitic carbon nitride, and graphene, covalent-organic frameworks based composites, metal based composites including metal carbides, metal halide perovskites, metal nitrides, metal oxides, metal phosphides, and metal sulfides, metal-organic frameworks based composites, plasmonic materials based composites and single atom based composites for CO₂ conversion, H₂ evolution, and pollutants oxidation are discussed elaborately. Finally, perspectives for further improvement in the design of composite materials for efficient photocatalysis are provided.

Emission tuning of highly efficient quaternary Ag-Cu-Ga-Se/ZnSe quantum dots for white light-emitting diodes

With the blooming development of zero-dimensional nanomaterials, I-III-VI alloying quantum dots (QDs) with outstanding photoelectrical properties have emerged to attract much attention as promising environmentally-friendly substitutions for conventional binary Cd-based QDs. In this work, a facile one-pot method was introduced to synthesize unreported quaternary Ag-Cu-Ga-Se/ZnSe (ACGSe/ZnSe) QDs. A relatively high photoluminescence quantum yield (PL QY) of 71.9% and a tunable emission from 510 to 620 nm were successfully achieved. We explored the roles of alloying compositions in ACGSe/ZnSe QDs, inferring that increased Ag proportion would not only lower the V_defect level which leads to the blue shift of emission, but also slow the ZnSe shelling process owing to the larger lattice distortion. At last, the white light-emitting diodes (WLEDs) were fabricated with ACGSe/ZnSe QDs as the conversion layer, indicating that the as-prepared QDs are a promising candidate for further applications.

Zn-Cu-In-S-Se Quinary "Green" Alloyed Quantum-Dot-Sensitized Solar Cells with a Certified Efficiency of 14.4

The photoelectronic properties of quantum dots (QDs) have a critical impact on the performance of quantum-dot-sensitized solar cells (QDSCs). Currently, I-III-VI group QDs have become the mainstream light-harvesting materials in high-performance QDSCs. However, it is still a great challenge to achieve satisfactory efficiency for light-harvesting, charge extraction, and charge collection simultaneously in QDSCs. We design and prepare Zn_0.4 Cu_0.7 In_1.0 S_x Se_2-x (ZCISSe) quinary alloyed QDs by cation/anion co-alloying strategy. The critical photoelectronic properties of target QDs, including band gap, conduction band energy level, and density of defect trap states, can be conveniently tailored. Experimental results demonstrate that the ZCISSe quinary alloyed QDs can achieve an ideal balance among light-harvesting, photogenerated electron extraction, and charge-collection efficiencies in QDSCs compared to its single anion or cation quaternary alloyed QD counterparts. Consequently, the quinary alloyed QDs boost the certified efficiency of QDSCs to 14.4 %, which is a new efficiency record for liquid-junction QD solar cells.

Solution-Processed Sb2Se3 on TiO2 Thin Films Toward Oxidation- and Moisture-Resistant, Self-Powered Photodetectors

Semiconductor-sensitized TiO₂ thin films with long-term air stability are attractive for optoelectronic devices and applications. Herein, we demonstrate the potential of the TiO₂ thin film (∼800 nm in thickness) sensitized with a Sb₂Se₃ layer (∼350 nm) grown from solution spin coating and processed by annealing recrystallization at 300 °C for high-performance optical detection. The type-II band alignment, p-Sb₂Se₃/n-TiO₂ heterojunction, and narrow band gap of Sb₂Se₃ (∼1.25 eV) endow the film photodetector with a large photocurrent, high switching stability and on/off ratio (>10³), and fast response speeds (<20 ms) under the broadband visible-near-infrared irradiation in a zero-bias self-powered photovoltaic mode. In particular, the photodetector shows notable resistance to oxidation and moisture for long-term operation, which is linked to the modest surface oxidation (Sb-O) of Sb₂Se₃, as verified by X-ray photoelectron spectroscopy. The first-principles calculations show that a low and medium concentration of oxygen substitution for Se (O_Se) and oxygen interstitial (O_i) with negative formation energies can lead to such a moderate surface oxidation but do not generate impurity states or just introduce a shallow-level acceptor state in the electronic structures of Sb₂Se₃ without degrading its optoelectronic performance. Our theoretical results offer a rational explanation for the air-stable and oxidation/moisture-resistant characteristics in moderately oxidized Sb₂Se₃ and may shed light on the surface oxidation-property relationship studies of other nonoxide semiconductor-sensitized devices.

Synthesis and optical applications of low dimensional metal-halide perovskites

Metal halide perovskites have received substantial attention in research communities due to their outstanding efficiency achievements in the field of photovoltaics, optoelectronics and electronics, exhibiting extraordinary optical, electrical and mechanical properties. The exceptional structural tunability enables perovskite material to possess low-dimensional form at the atomic level and extends their applications into optoelectronic and photonic fields. This review discusses the recent progress of synthetic routes and fundamental optoelectronic properties of low-dimensional metal halide perovskites. In addition, the focus is to highlight the potential applications of perovskites in various devices including solar cells, light-emitting diodes, lasers, waveguides and memory devices. Finally, outlooks and the challenges that face the development of the perovskite materials in the near future are also presented.

Influence of a bifunctional linker on the loading of Cu2AgInS4 QDs onto porous TiO2 NFs to use as an efficient photoanode to boost the photoconversion efficiency of QDSCs

Quaternary Cu₂AgInS₄ quantum dots anchored more onto porous TiO₂ NFs through a linker, 3-mercaptopropionic acid exhibits higher photoconversion efficiency of QDSC than that of the same anchored without a linker.

Se-Assisted Performance Enhancement of Cu2ZnSn(S,Se)4 Quantum-Dot Sensitized Solar Cells via a Simple Yet Versatile Synthesis

The earth-abundant Cu₂ZnSnS₄ (CZTS) quantum dots (QDs) have emerged as one potential substitute to toxic cadmium or rare indium QDs, but their application in quantum dot-sensitized solar cells (QDSSCs) is still limited by the improper particle size and the rigorous synthesis and ligand exchange conditions. Herein, we developed a one-pot hot injection method by using Tri-n-octylphosphine oxide (TOPO) as the solvent and oleylamine as the capping agent to synthesize Cu₂ZnSn(S,Se)₄ (CZTSSe) QDs with adjustable size and narrow size distribution. The key feature of this approach is that we can take advantage of the high-temperature nucleation, low-temperature growth, and strong reducibility of NaHB₄ to prepare small-sized CZTSSe QDs without using 1-dodecanethiol (DDT) and to extend the light harvesting range through Se incorporation. After Se incorporation, it turns out that the conduction band (CB) level of CZTSSe QDs decreases, implying that the injection driving force of the electron to the CB of TiO₂ films becomes weaker and a larger recombination would be induced at the TiO₂/QDs/electrolyte interface. Benefiting from the broadened optoelectronic response range, the induced higher J_sc (16.80 vs 14.13 mA/cm²) finally leads to the increase of the conversion efficiency of CZTSSe QDSSC from 3.17% to 3.54% without further modification. Despite the fact that the efficiency is still far behind those of literature reported values through use of other chalcogenide sensitizers, this DDT-free approach solves the main hindrance for the application of CZTSSe QDs in QDSSCs and holds a more convenient way for ligand exchange, light absorption improvement, and particle size control.

Efficient polycrystalline silicon solar cells with double metal oxide layers

Crystalline silicon solar cells can achieve high power conversion efficiency and can be successfully commercialized; however, the exploration of optimization strategies is still necessary. Here, we demonstrated improved performance of a polycrystalline silicon solar cell by depositing Sb2Ox/CdO double layers onto a Si wafer via a low-cost route. The metal oxide layers, forming effective heterojunctions, suppressed carrier recombination and reduced surface reflection. Additionally, the heterojunctions of Sb2Ox/CdO/Si enhanced the transmission of electrons and holes and simultaneously, a wider response range in the solar spectrum was realized. The power conversion efficiency improved from 12.6 to 16.7% in a polycrystalline silicon solar cell, with relative increase of 33%. It is expected that the metal oxide-enhanced devices will have tremendous potential in commercial applications.

Photoelectrocatalytic Hydrogen Generation Enabled by CdS Passivated ZnCuInSe Quantum Dot-Sensitized TiO₂ Decorated with Ag Nanoparticles

Here we present the photoelectrocatalytic hydrogen generation properties of CdS passivated ZnCuInSe (ZCISe) quantum dots (QDs) supported by TiO₂ nanowires decorated with Ag nanoparticles. In this configuration, Ag nanoparticles were sandwiched between the photo-electrons collector (TiO₂) and photo-sensitizers (ZCISe), and acted as an electron relay speeding up the charge carrier transport. ZCISe and CdS enabled the optical absorption of the photoelectrode ranging from ultraviolet to near infrared region, which significantly enhanced the solar-to-chemical energy conversion efficiency. A photocurrent of 10.5 mA/cm² and a hydrogen production rate of about 52.9 μmol/h were achieved under simulated sunlight (1.5 AG).

Near-Infrared Active Lead Chalcogenide Quantum Dots: Preparation, Post-Synthesis Ligand Exchange, and Applications in Solar Cells

Quantum dots (QDs) of lead chalcogenides (e.g. PbS, PbSe, and PbTe) are attractive near-infrared (NIR) active materials that show great potential in a wide range of applications, such as, photovoltaics (PV), optoelectronics, sensors, and bio-electronics. The surface ligand plays an essential role in the production of QDs, post-synthesis modification, and their integration to practical applications. Therefore, it is critically important that the influence of surface ligands on the synthesis and properties of QDs is well understood for their applications in various devices. In this Review we elaborate the application of colloidal synthesis techniques for the preparation of lead chalcogenide based QDs. We specifically focus on the influence of surface ligands on the synthesis of QDs and their solution-phase ligand exchange. Given the importance of lead chalcogenide QDs as potential light harvesters, we also pay particular attention to the current progress of these QDs in photovoltaic applications.

Dual function of molybdenum sulfide/C-cloth in enhancing the performance of fullerene nanosheets based solar cell and supercapacitor

Quantum dot solar cells (QDSCs) with hexagonal fullerene nanosheets (C60-NS) embedded in a titanium oxide/cadmium sulfide (TiO2/CdS) photoanode coupled with a carbon-cloth (C-cloth) coated with molybdenum sulfide (MoS2) counter electrode (CE) are studied for the first time. C60-NS due to a favorable work function of 4.57 eV and a conductance of 1.44 μS, enable faster electron injection from the conduction band of cadmium sulfide to the current collector, in contrast to the bulk fullerene based TiO2/CdS solar cell. The champion cell with the TiO2/C60-NS/CdS photoanode and a MoS2/C-cloth CE exhibits a high power conversion efficiency of 5.6%, greater by ∼14% relative to its' analogue cell with bulk fullerene. A large area cell of 1 cm2 dimensions with TiO2/C60-NS/CdS gives a PCE of 2.9%. The effect of MoS2 in improving the efficiency of the cell with a TiO2/C60-NS/CdS photoanode is realized in terms of enhanced electrocatalytic activity for polysulfide reduction, and lower charge transfer resistance at the polysulfide/CE interface compared to a cell with the same photoanode but having pristine carbon-cloth as the CE. The ability of MoS2 for catalyzing the oxidized polysulfide species at the CE and C60-NS for improving the charge collection at the photoanode serve as indicators for their wider utilization in solar cells. It also serves as a good supercapacitor material. A MoS2/C-cloth based symmetric cell exhibits a specific capacitance of 645 F g-1 at 2 A g-1, which shows its' potential for energy storage as well. By integrating the QDSC and the supercapacitor, the resulting integrated device acquires a photovoltage of 0.7 V, under 1 sun illumination.

Interface Engineering in Quantum-Dot-Sensitized Solar Cells

The unique properties of II-VI semiconductor nanocrystals such as superior light absorption, size-dependent optoelectronic properties, solution processability, and interesting photophysics prompted quantum-dot-sensitized solar cells (QDSSCs) as promising candidates for next-generation photovoltaic (PV) technology. QDSSCs have advantages such as low-cost device fabrication, multiple exciton generation, and the possibility to push over the theoretical power conversion efficiency (PCE) limit of 32%. In spite of dedicated research efforts to enhance the PCE, optimize individual solar cell components, and better understand the underlying science, QDSSCs have unfortunately not lived up to their potential due to shortcomings in the fabrication process and with the QDs themselves. In this feature article, we briefly discuss the QDSSC concepts and mechanisms of the charge carrier recombination pathways that occur at multiple interfaces, viz., (i) metal oxide (MO)/QDs, (ii) MO/QDs/electrolyte, and (iii) counter electrode (CE)/electrolyte. The rational strategies that have been developed to minimize/block these charge recombination pathways are elaborated. The article concludes with a discussion of the present challenges in fabricating efficient devices and future prospects for QDSSCs.

Fabrication of three-dimensionally ordered macroporous TiO2 film and its application in quantum dots-sensitized solar cells

Engineering of TiO₂ photoanode is an important strategy for increasing the photovoltaic conversion efficiency of quantum dots-sensitized solar cells (QDSSCs). In this work, three-dimensional ordered macroporous (3DOM) TiO₂ films are fabricated by the controlled infiltrating-calcination method using the close-packed polystyrene spheres colloidal crystals as templates. The as-prepared macroporous TiO₂ films are then applied as the photoanode in colloidal CdSe QDSSCs. This structure not only facilitates the penetration of thioglycolic acid capped CdSe QDs, and thus achieving a high coverage of the internal surface with QDs sensitizer, but also exhibits a photonic band gap with tunable positions, which could enhance the light absorption. As a result, the liquid-junction QDSSCs assembled with the CdSe sensitized 3DOM TiO₂ yields a power conversion efficiency of 3.60% under solar illumination of 100 mW cm^-2, and this value is much higher than that of the device using nanoporous TiO₂ photoanode (1.82%). Our results indicate that the 3DOM TiO₂ is a promising candidate for the construction of high-efficiency QDSSCs.

Solar light harvesting with multinary metal chalcogenide nanocrystals

The paper reviews the state of the art in the synthesis of multinary (ternary, quaternary and more complex) metal chalcogenide nanocrystals (NCs) and their applications as a light absorbing or an auxiliary component of light-harvesting systems. This includes solid-state and liquid-junction solar cells and photocatalytic/photoelectrochemical systems designed for the conversion of solar light into the electric current or the accumulation of solar energy in the form of products of various chemical reactions. The review discusses general aspects of the light absorption and photophysical properties of multinary metal chalcogenide NCs, the modern state of the synthetic strategies applied to produce the multinary metal chalcogenide NCs and related nanoheterostructures, and recent achievements in the metal chalcogenide NC-based solar cells and the photocatalytic/photoelectrochemical systems. The review is concluded by an outlook with a critical discussion of the most promising ways and challenging aspects of further progress in the metal chalcogenide NC-based solar photovoltaics and photochemistry.

Quantum dot-sensitized solar cells

A comprehensive overview of the development of quantum dot-sensitized solar cells (QDSCs) is presented.

Comparative advantages of Zn–Cu–In–S alloy QDs in the construction of quantum dot-sensitized solar cells

Alloyed structures of quantum dot light-harvesting materials favor the suppression of unwanted charge recombination as well as acceleration of the charge extraction and therefore the improvement of photovoltaic performance of the resulting solar cell devices. Herein, the advantages of Zn–Cu–In–S (ZCIS) alloy QD serving as light-harvesting sensitizer materials in the construction of quantum dot-sensitized solar cells (QDSCs) were compared with core/shell structured CIS/ZnS, as well as pristine CIS QDs. The built QDSCs with alloyed Zn–Cu–In–S QDs as photosensitizer achieved an average power conversion efficiency (PCE) of 8.47% (V_oc = 0.613 V, J_sc = 22.62 mA cm⁻², FF = 0.610) under AM 1.5G one sun irradiation, which was enhanced by 21%, and 82% in comparison to those of CIS/ZnS, and CIS based solar cells, respectively. In comparison to cell device assembled by the plain CIS and core/shell structured CIS/ZnS, the enhanced photovoltaic performance in ZCIS QDSCs is mainly ascribed to the faster photon generated electron injection rate from QD into TiO₂ substrate, and the effective restraint of charge recombination, as confirmed by incident photon-to-current conversion efficiency (IPCE), open-circuit voltage decay (OCVD), as well as electrochemical impedance spectroscopy (EIS) measurements.

Benefiting from the accelerative electron injection and retarded charge recombination, Zn–Cu–In–S alloy QD based QDSC achieved a PCE of 8.55%, which is 21%, and 82% higher than those of CIS/ZnS, and pristine CIS QDs based solar cells, respectively.

Route to Improving Photovoltaics Based on CdSe/CdSexTe1-x Type-II Heterojunction Nanorods: The Effect of Morphology and Cosensitization on Carrier Recombination and Transport

One-dimensionally elongated nanoparticles with type-II staggered band offset are of potential use as light-harvesting materials for photovoltaics, but only a limited attention has been given to elucidate the factors governing the cell performance obtainable from such materials. Herein, we describe a combined strategy to enhance charge collection from CdSe/CdSe_xTe_1-x type-II heterojunction nanorods (HNRs) utilized as light harvesters for sensitized solar cells. By integrating morphology- and composition-tuned type-II HNRs into solar cells, factors that yield interfaces favorable both for the electron injection into TiO₂ and hole transfer to electrolyte are examined. Furthermore, it is shown that a more efficient photovoltaic system results from cosensitization with CdS quantum dots (QDs) predeposited on a TiO₂ scaffold, which improves charge collection from HNRs. Electrochemical impedance spectroscopy (EIS) analysis suggests that such a synergistically enhanced system benefits from the decreased recombination within HNRs and facilitated charge transport through the cosensitized TiO₂ electrode, even with the activation of a recombination path presumably related to the photogenerated holes in CdS QDs.

Stability, Scale-up, and Performance of Quantum Dot Solar Cells with Carbonate-Treated Titanium Oxide Films

A novel yet simple approach of carbonate (CBN) treatment of TiO₂ films is performed, and quantum dot solar cells (QDSCs) with high power conversion efficiencies (PCEs), reasonably good stabilities, and good fill factors (FFs) are fabricated with TiO₂-CBN films. The ability of carbonate groups to passivate defects or oxygen vacancies of TiO₂ is confirmed from a nominally enhanced band gap, a lowered defect induced fluorescence intensity, an additional Ti-OH signal obtained after carbonate decomposition, and a more capacitive low frequency electrochemical impedance behavior achieved for TiO₂-CBN compared to untreated TiO₂. A large area QDSC of 1 cm² with a TiO₂-CBN/CdS/Au@PAA (poly(acrylic acid)) photoanode delivers an enhanced PCE of 4.32% as opposed to 3.03% achieved for its analogous cell with untreated TiO₂. Impedance analysis illustrates the role of carbonate treatment in increasing the recombination resistance at the photoanode/electrolyte interfaces and in suppressing back-electron transfer to the electrolyte, thus validating the superior PCE achieved for the cell with carbonate-treated TiO₂. QDSCs with the configuration TiO₂-CBN/CdS/Au@PAA-polysulfide/SiO₂ gel-carbon-fabric/WO_3-x and active areas of 0.2-0.3 cm² yield efficiencies in the range of 5.16 to 6.3%, and the average efficiency of the cells is 5.9%. The champion cell is characterized by the following photovoltaic parameters: J_SC (short circuit current density), 11.04 mA cm^-2; V_OC (open circuit voltage), 0.9 V; FF, 0.63; and PCE, 6.3%. Stability tests performed on this cell show that dark storage has a less deleterious effect on cell performance compared to extended illumination. In dark, the PCE of the cell dropped from 5.69 to 5.52%, and under prolonged continuous irradiance of 5 h, it decreased from 5.91 to 4.83%. A scaled-up QDSC with the same architecture of 4 cm² size showed a PCE of 1.06%, and the demonstration of the lighting of a LED accomplished using this cell exemplifies that this cell can be used for powering electronic devices that require low power.

Zinc dopant inspired enhancement of electron injection for CuInS2quantum dot-sensitized solar cells

The PCE of doped CuInS₂QDSCs increased from 5.21% to 5.90%, due to broadened optoelectronic response range and accelerated electron injection.