Surface State Density Determines the Energy Level Alignment at Hybrid Perovskite/Electron Acceptors Interfaces

Surface Defects Control Bulk Carrier Densities in Polycrystalline Pb-Halide Perovskites

The (opto)electronic behavior of semiconductors depends on their (quasi-)free electronic carrier densities. These are regulated by semiconductor doping, i.e., controlled "electronic contamination". For metal halide perovskites (HaPs), the functional materials in several device types, which already challenge some of the understanding of semiconductor properties, this study shows that doping type, density and properties derived from these, are to a first approximation controlled via their surfaces. This effect, relevant to all semiconductors, and already found for some, is very evident for lead (Pb)-HaPs because of their intrinsically low electrically active bulk and surface defect densities. Volume carrier densities for most polycrystalline Pb-HaP films (<1 µm grain diameter) are below those resulting from even < 0.1% of surface sites being electrically active defects. This implies and is consistent with interfacial defects controlling HaP devices in multi-layered structures with most of the action at the two HaP interfaces. Surface and interface passivation effects on bulk electrical properties are relevant to all semiconductors and are crucial for developing those used today. However, because bulk dopant introduction in HaPs at controlled ppm levels for electronic-relevant carrier densities is so difficult, passivation effects are vastly more critical and dominate, to first approximation, their optoelectronic characteristics in devices.

Influence of X-Ray Irradiation During Photoemission Studies on Halide Perovskite-Based Devices

Metal halide perovskites (MHPs) are semiconductors with promising application in optoelectronic devices, particularly, in solar cell technologies. The chemical and electronic properties of MHPs at the surface and interfaces with adjacent layers dictate charge transfer within stacked devices and ultimately the efficiency of the latter. X-ray photoelectron spectroscopy is a powerful tool to characterize these material properties. However, the X-ray radiation itself can potentially affect the MHP and therefore jeopardize the reliability of the obtained information. In this work, the effect of X-ray irradiation is assessed on Cs0.05 MA0.15 FA0.8 Pb(I0.85 Br0.15 )3  (MA for CH3 NH3 , and FA for CH2 (NH2 )2 ) MHP thin-film samples in a half-cell device. There is a comparison of measurements acquired with synchrotron radiation and a conventional laboratory source for different times. Changes in composition and core levels binding energies are observed in both cases, indicating a modification of the chemical and electronic properties. The results suggest that changes observed over minutes with highly brilliant synchrotron radiation are likely occurring over hours when working with a lab-based source providing a lower photon flux. The possible degradation pathways are discussed, supported by steady-state photoluminescence analysis. The work stresses the importance of beam effect assessment at the beginning of XPS experiments of MHP samples.

Synergistic Ion-Anchoring Passivation for Perovskite Solar Cells with Efficiency Exceeding 24% and Ultra-Ambient Stability

The high-density defect states existing at the grain boundaries and heterojunction interfaces induce nonradiative charge recombination and ion migration processes within perovskite film, which seriously impair the device efficiency and stability. Here, we propose a novel synergistic ion-anchoring passivation (SIP) strategy for high-performance perovskite solar cells, by designing a multifunctional molecule to heal the charged defects via electrostatic interactions. The anion and cation species of the multifunctional molecule are rationally screened via high-throughput DFT simulation and experimental verification, which act as efficient surface passivation agents to heal the lead- and iodine-related defects. As a result, the defect-less perovskite films deliver encouraging device power conversion efficiency >24% with negligible hysteresis. A remarkable open-circuit voltage (Voc) of 1.17 V was obtained with a Voc deficit of 370 mV, featuring the outstanding defect-passivation capability of the SIP strategy. Moreover, the SIP-treated devices show exceptional ambient stability and maintain 70% of the initial efficiency after 150 h of high humidity exposure (relative humidity 70%-80%). Our results highlight the importance of the rational design of passivation agents to realize high-performance perovskite electronics.

Chemical approaches for electronic doping in photovoltaic materials beyond crystalline silicon

Electronic doping is applied to tailor the electrical and optoelectronic properties of semiconductors, which have been widely adopted in information and clean energy technologies, like integrated circuit fabrication and PVs. Though this concept has prevailed in conventional PVs, it has achieved limited success in the new-generation PV materials, particularly in halide perovskites, owing to their soft lattice nature and self-compensation by intrinsic defects. In this review, we summarize the evolution of the theoretical understanding and strategies of electronic doping from Si-based photovoltaics to thin-film technologies, e.g., GaAs, CdTe and Cu(In,Ga)Se₂, and also cover the emerging PVs including halide perovskites and organic solar cells. We focus on the chemical approaches to electronic doping, emphasizing various chemical interactions/bonding throughout materials synthesis/modification to device fabrication/operation. Furthermore, we propose new classifications and models of electronic doping based on the physical and chemical properties of dopants, in the context of solid-state chemistry, which inspires further development of optoelectronics based on perovskites and other hybrid materials. Finally, we outline the effects of electronic doping in semiconducting materials and highlight the challenges that need to be overcome for reliable and controllable doping.

Simultaneous achievement of defect passivation and carrier transport promotion by using emerald salt for methylammonium-free perovskite solar cells

Defect passivation along with promoted charge transport is potentially an effective but seldom exploited strategy for high-performance perovskite solar cells (PSCs). Herein, the in situ defect passivation and carrier transport improvement are simultaneously realized by introducing a conductive polymer (i.e., emerald salt, ES) into the precursor solution of methylammonium (MA)-free perovskites. The interaction between ES and uncoordinated Pb2+ reduces defect density to suppress the non-radiative recombination. Moreover, ES can act as a "carrier driver" to promote the carrier transport due to its conductive feature, resulting in efficient PSC devices with a decent power conversion efficiency (PCE) of 23.0%, which is among the most efficient MA-free PSCs. The ES-based unencapsulated devices show superior stability, retaining 89.1% and 83.8% of their initial PCEs when subjected to 35 ± 5% relative humidity (RH) storage and 85 °C thermal aging for 1000 h, respectively. To further assess the large-area compatibility of our strategy, 5 × 5 cm2 mini modules were also fabricated, delivering an impressive efficiency of 19.3%. This work sheds light on the importance of conductive additives in boosting cell performance by playing multiple roles in passivating defects, retarding the moisture invasion, and enhancing and balancing charge transport.

Electrode Engineering in Halide Perovskite Electronics: Plenty of Room at the Interfaces

Contact engineering is a prerequisite for achieving desirable functionality and performance of semiconductor electronics, which is particularly critical for organic-inorganic hybrid halide perovskites due to their ionic nature and highly reactive interfaces. Although the interfaces between perovskites and charge-transporting layers have attracted lots of attention due to the photovoltaic and light-emitting diode applications, achieving reliable perovskite/electrode contacts for electronic devices, such as transistors and memories, remains as a bottleneck. Herein, a critical review on the elusive nature of perovskite/electrode interfaces with a focus on the interfacial electrochemistry effects is presented. The basic guidelines of electrode selection are given for establishing non-polarized interfaces and optimal energy level alignment for perovskite materials. Furthermore, state-of-the-art strategies on interface-related electrode engineering are reviewed and discussed, which aim at achieving ohmic transport and eliminating hysteresis in perovskite devices. The role and multiple functionalities of self-assembled monolayers that offer a unique approach toward improving perovskite/electrode contacts are also discussed. The insights on electrode engineering pave the way to advancing stable and reliable perovskite devices in diverse electronic applications.

Electronic properties of metal halide perovskites and their interfaces: the basics

We have witnessed tremendous progress of metal halide perovskite (MHP)-based optoelectronic devices, especially in the field of photovoltaics. Despite intensive research in the past few years, questions still remain regarding their fundamental optoelectronic properties, among which the electronic properties exhibit an interplay of numerous phenomena that deserve serious scrutiny. In this Focus article, we aim to provide a contemporary understanding of the unique electronic properties that has been resolved by the community. First introducing some of the basic concepts established in semiconductor physics, the intrinsic and extrinsic electronic properties of the MHPs are disentangled and explained. With this, the complex interplay of interface-, dopant-, and surface state-induced electronic states in determining the electrostatic landscape in the material can be comprehended, and the energy level alignment in device architectures more reliably assessed.

Photoinduced Energy-Level Realignment at Interfaces between Organic Semiconductors and Metal-Halide Perovskites

In contrast to the common conception that the interfacial energy-level alignment is affixed once the interface is formed, we demonstrate that heterojunctions between organic semiconductors and metal-halide perovskites exhibit huge energy-level realignment during photoexcitation. Importantly, the photoinduced level shifts occur in the organic component, including the first molecular layer in direct contact with the perovskite. This is caused by charge-carrier accumulation within the organic semiconductor under illumination and the weak electronic coupling between the junction components.

Recent Issues and Configuration Factors in Perovskite-Silicon Tandem Solar Cells towards Large Scaling Production

The unprecedented development of perovskite-silicon (PSC-Si) tandem solar cells in the last five years has been hindered by several challenges towards industrialization, which require further research. The combination of the low cost of perovskite and legacy silicon solar cells serve as primary drivers for PSC-Si tandem solar cell improvement. For the perovskite top-cell, the utmost concern reported in the literature is perovskite instability. Hence, proposed physical loss mechanisms for intrinsic and extrinsic instability as triggering mechanisms for hysteresis, ion segregation, and trap states, along with the latest proposed mitigation strategies in terms of stability engineering, are discussed. The silicon bottom cell, being a mature technology, is currently facing bottleneck challenges to achieve power conversion efficiencies (PCE) greater than 26.7%, which requires more understanding in the context of light management and passivation technologies. Finally, for large-scale industrialization of the PSC-Si tandem solar cell, the promising silicon wafer thinning, and large-scale film deposition technologies could cause a shift and align with a more affordable and flexible roll-to-roll PSC-Si technology. Therefore, this review aims to provide deliberate guidance on critical fundamental issues and configuration factors in current PSC-Si tandem technologies towards large-scale industrialization. to meet the 2031 PSC-Si Tandem road maps market target.

Recent Progress on Perovskite Surfaces and Interfaces in Optoelectronic Devices

Surfaces and heterojunction interfaces, where defects and energy levels dictate charge-carrier dynamics in optoelectronic devices, are critical for unlocking the full potential of perovskite semiconductors. In this progress report, chemical structures of perovskite surfaces are discussed and basic physical rules for the band alignment are summarized at various perovskite interfaces. Common perovskite surfaces are typically decorated by various compositional and structural defects such as residual surface reactants, discrete nanoclusters, reactions by products, vacancies, interstitials, antisites, etc. Some of these surface species induce deep-level defect states in the forbidden band forming very harmful charge-carrier traps and affect negatively the interface band alignments for achieving optimal device performance. Herein, an overview of research progresses on surface and interface engineering is provided to minimize deep-level defect states. The reviewed subjects include selection of interface and substrate buffer layers for growing better crystals, materials and processing methods for surface passivation, the surface catalyst for microstructure transformations, organic semiconductors for charge extraction or injection, heterojunctions with wide bandgap perovskites or nanocrystals for mitigating defects, and electrode interlayer for preventing interdiffusion and reactions. These surface and interface engineering strategies are shown to be critical in boosting device performance for both solar cells and light-emitting diodes.

Mechanism and Timescales of Reversible p-Doping of Methylammonium Lead Triiodide by Oxygen

Understanding and controlling the energy level alignment at interfaces with metal halide perovskites (MHPs) is essential for realizing the full potential of these materials for use in optoelectronic devices. To date, however, the basic electronic properties of MHPs are still under debate. Particularly, reported Fermi level positions in the energy gap vary from indicating strong n- to strong p-type character for nominally identical materials, raising serious questions about intrinsic and extrinsic defects as dopants. ​In this work, photoemission experiments demonstrate that thin films of the prototypical methylammonium lead triiodide (MAPbI3 ) behave like an intrinsic semiconductor in the absence of oxygen. Oxygen is then shown to be able to reversibly diffuse into and out of the MAPbI3 bulk, requiring rather long saturation timescales of ≈1 h (in: ambient air) and over 10 h (out: ultrahigh vacuum), for few 100 nm thick films. Oxygen in the bulk leads to pronounced p-doping, positioning the Fermi level universally ≈0.55 eV above the valence band maximum. The key doping mechanism is suggested to be molecular oxygen substitution of iodine vacancies, supported by density functional theory calculations. This insight rationalizes previous and future electronic property studies of MHPs and calls for meticulous oxygen exposure protocols.

In Situ Formation of Mixed-Dimensional Surface Passivation Layers in Perovskite Solar Cells with Dual-Isomer Alkylammonium Cations

Dimensional engineering of perovskite solar cells has attracted significant research attention recently because of the potential to improve both device performance and stability. Here, a novel 2D passivation scheme for 3D perovskite solar cells is demonstrated using a mixed cation composition of 2D perovskite based on two different isomers of butylammonium iodide. The dual-cation 2D perovskite outperforms its single cation 2D counterparts in surface passivation quality, resulting in devices with an impressive open-circuit voltage of 1.21 V for a perovskite composition with an optical bandgap of ≈1.6 eV, and a champion efficiency of 23.27%. Using a combination of surface elemental analysis and valence electron spectra decomposition, it is shown that an in situ interaction between the 2D perovskite precursor and the 3D active layer results in surface intermixing of 3D and 2D perovskite phases, providing an effective combination of defect passivation and enhanced charge transfer, despite the semi-insulating nature of the 2D perovskite phase. The demonstration of the synergistic interaction of multiple organic spacer cations in a 2D passivation layer offers new opportunities for further enhancement of device performance with mixed dimensional perovskite solar cells.

Recent progress in hybrid perovskite solar cells through scanning tunneling microscopy and spectroscopy

Currently, sustainable renewable energy sources are urgently required to fulfill the cumulative energy needs of the world's 7.8 billion population, since the conventional coal and fossil fuels will be exhausted soon. Photovoltaic devices are a direct and efficient means to produce a huge amount of energy to meet these energy targets. In particular, hybrid-perovskite-based photovoltaic devices merit special attention not only due to their exceptional efficiency for generating appreciable energy but also their tunable band gaps and the ease of device fabrication. However, the commercialization of such devices suffers from the instability of the compositional materials. The cause of instability is the perovskite's structure and its morphology at the sub-molecular level; thereby revealing and eliminating these instabilities are a striking challenge. To address this issue, scanning tunneling microscopy/spectroscopy (STM/STS) presents a comprehensive method to allow the visualization of the morphology and electronic structure of materials at atomic-level resolution. Here, we review the recent developments of perovskite-based solar cells (PSCs), the STM/STS analysis of photoactive halide/hybrid and oxide materials, and the real-time STM/STS investigation of electronic structures with defects and traps that are believed to mainly affect device performances. The detailed STM/STS analysis can facilitate a better understanding of the properties of materials at the nanoscale. This informative study may hold great promise to advance the development of stable PSCs under atmospheric conditions.

Light-Induced Passivation in Triple Cation Mixed Halide Perovskites: Interplay between Transport Properties and Surface Chemistry

Mixed halide perovskites have attracted a strong interest in the photovoltaic community as a result of their high power conversion efficiency and the solid opportunity to realize low-cost and industry-scalable technology. Light soaking represents one of the most promising approaches to reduce non-radiative recombination processes and thus to optimize device performances. Here, we investigate the effects of 1 sun illumination on state-of-the-art triple cation halide perovskite thin films Cs_0.05(MA_0.14, FA_0.86)_0.95 Pb (I_0.84, Br_0.16)₃ by a combined optical and chemical characterization. Competitive passivation and degradation effects on perovskite transport properties have been analyzed by spectrally and time-resolved quantitative imaging luminescence analysis and by X-ray photoemission spectroscopy (XPS). We notice a clear improvement of the optoelectronic properties of the material, with a increase of the quasi fermi level splitting and a corresponding decrease of methylammonium MA⁺ for short (up to 1 h) light soaking time. However, after 5 h of light soaking, phase segregation and in-depth oxygen penetration lead to a decrease of the charge mobility.

Binding and electronic level alignment of π-conjugated systems on metals

We review the binding and energy level alignment of π-conjugated systems on metals, a field which during the last two decades has seen tremendous progress both in terms of experimental characterization as well as in the depth of theoretical understanding. Precise measurements of vertical adsorption distances and the electronic structure together with ab initio calculations have shown that most of the molecular systems have to be considered as intermediate cases between weak physisorption and strong chemisorption. In this regime, the subtle interplay of different effects such as covalent bonding, charge transfer, electrostatic and van der Waals interactions yields a complex situation with different adsorption mechanisms. In order to establish a better understanding of the binding and the electronic level alignment of π-conjugated molecules on metals, we provide an up-to-date overview of the literature, explain the fundamental concepts as well as the experimental techniques and discuss typical case studies. Thereby, we relate the geometric with the electronic structure in a consistent picture and cover the entire range from weak to strong coupling.

Reducing Detrimental Defects for High-Performance Metal Halide Perovskite Solar Cells

In several photovoltaic (PV) technologies, the presence of electronic defects within the semiconductor band gap limit the efficiency, reproducibility, as well as lifetime. Metal halide perovskites (MHPs) have drawn great attention because of their excellent photovoltaic properties that can be achieved even without a very strict film-growth control processing. Much has been done theoretically in describing the different point defects in MHPs. Herein, we discuss the experimental challenges in thoroughly characterizing the defects in MHPs such as, experimental assignment of the type of defects, defects densities, and the energy positions within the band gap induced by these defects. The second topic of this Review is passivation strategies. Based on a literature survey, the different types of defects that are important to consider and need to be minimized are examined. A complete fundamental understanding of defect nature in MHPs is needed to further improve their optoelectronic functionalities.

Bright CsPbI3 Perovskite Quantum Dot Light-Emitting Diodes with Top-Emitting Structure and a Low Efficiency Roll-Off Realized by Applying Zirconium Acetylacetonate Surface Modification

Zirconium acetylacetonate used as a co-precursor in the synthesis of CsPbI₃ quantum dots (QDs) increased their photoluminescence quantum efficiency to values over 90%. The top-emitting device structure on a Si substrate with high thermal conductivity (to better dissipate Joule heat generated at high current density) was designed to improve the light extraction efficiency making use of a strong microcavity resonance between the bottom and top electrodes. As a result of these improvements, light-emitting diodes (LEDs) utilizing Zr-modified CsPbI₃ QDs with an electroluminescence at 686 nm showed external quantum efficiency (EQE) of 13.7% at a current density of 108 mA cm^-2, which was combined with low efficiency roll-off (maintaining an EQE of 12.5% at a high current density of 500 mA cm^-2) and a high luminance of 14 725 cd m^-2, and the stability of the devices being repeatedly lit (cycled on and off at high drive current density) has been greatly enhanced.

Facile and noninvasive passivation, doping and chemical tuning of macroscopic hybrid perovskite crystals

Halide vacancies and associated metallic lead (Pb°) observed at the surface and deep inside macroscopic organolead trihalide perovskite crystals is removed through a facile and noninvasive treatment. Indeed, Br₂ vapor is shown to passivate Br-vacancies and associated Pb° in the bulk of macroscopic crystals. Controlling the exposure time can markedly improve the overall stoichiometry for moderate exposures or introduce excessive bromide for long exposures, resulting in p-doping of the crystals. In the low dose passivation regime, Hall effect measurements reveal a ca. 3-fold increase in carrier mobility to ca. 15 cm²V^-1s^-1, while the p-doping increases the electrical conductivity ca. 10000-fold, including a 50-fold increase in carrier mobility to ca. 150 cm²V^-1s^-1. The ease of diffusion of Br₂ vapor into macroscopic crystals is ascribed to the porosity allowed in rapidly grown crystals through aggregative processes of the colloidal sol during growth of films and macroscopic crystals. This process is believed to form significant growth defects, including open voids, which may be remnants of the escaping solvent at the solidification front. These results suggest that due to the sol-gel-like nature of the growth process, macroscopic perovskite crystals reported in this study are far from perfect and point to possible pathways to improving the optoelectronic properties of these materials. Nevertheless, the ability of the vapor-phase approach to access and tune the bulk chemistry and properties of nominally macroscopic perovskite crystals provides interesting new opportunities to precisely manipulate and functionalize the bulk properties of hybrid perovskite crystals in a noninvasive manner.

Influence of Surface Ligands on Energetics at FASnI3/C60 Interfaces and Their Impact on Photovoltaic Performance

Interfacial chemistry and energetics significantly impact the performance of photovoltaic devices. In the case of Pb-containing organic metal halide perovskites, photoelectron spectroscopy has been used to determine the energetic alignment of frontier electronic energy levels at various interfaces present in the photovoltaic device. For the Sn-containing analogues, which are less toxic, no such measurements have been made. Through a combination of ultraviolet, inverse, and X-ray photoelectron spectroscopy (UPS, IPES, and XPS, respectively) measurements taken at varying thickness increments during stepwise deposition of C₆₀ on FASnI₃, we present the first direct measurements of the frontier electronic energy levels across the FASnI₃/C₆₀ interface. The results show band bending in both materials and transport gap widening in FASnI₃ at the interface with C₆₀. The XPS results show that iodide diffuses into C₆₀ and results in n-doping of C₆₀. This iodide diffusion out of FASnI₃ impacts the valence and conduction band energies of FASnI₃ more than the core levels, with the core level shifts displaying a different trend than the valence and conduction bands. Surface treatment of FASnI₃ with carboxylic acids and bulky ammonium substituted surface ligands results in slight alterations in the interfacial energetics, and all surface ligands result in similar or improved PV performance relative to the untreated devices. The greatest PV stability results from treatment with a fluorinated carboxylic acid derivative; however, iodide diffusion is still observed to occur with this surface ligand.

Tuning the Energy Band Structure at Interfaces of the SrFe0.75Ti0.25O3-δ-Sm0.25Ce0.75O2-δ Heterostructure for Fast Ionic Transport

Interface engineering holds huge potential for enabling exceptional physical properties in heterostructure materials via tuning properties at the atomic level. In this study, a heterostructure built by a new redox stable semiconductor SrFe_0.75Ti_0.25O_3-δ (SFT) and an ionic conductor Sm_0.25Ce_0.75O₂ (SDC) is reported. The SFT-SDC heterostructure exhibits a high ionic conductivity >0.1 S/cm at 520 °C, which is 1 order of magnitude higher than that of bulk SDC. When it was applied into the fuel cell, the SFT-SDC can realize favorable electrolyte functionality and result in an excellent power density of 920 mW cm^-2 at 520 °C. The prepared SFT-SDC heterostructure materials possess both electronic and ionic conduction, where electron states modulate local electrical field to facilitate ion transport. Further investigations to calculate the structure and electronic structure/state of SFT and SDC are done using density functional theory (DFT). It is found that the reconstruction of the energy band at interfaces is responsible for such enhanced ionic conductivity and cell power output. The current study about the perovskite-based heterostructure presents a novel strategy for developing advanced ceramic fuel cells.

Fermi-level pinning in methylammonium lead iodide perovskites

Hybrid organic inorganic perovskites are ideal candidates for absorber layers in next generation thin film photovoltaics. The polycrystalline nature of these layers imposes substantial complications for the design of high efficiency devices since the optoelectronic properties can vary on the nanometre scale. Here we show via scanning tunnelling microscopy and spectroscopy that different grains and grain facets exhibit variations in the local density of states. Modeling of the tunneling spectroscopy curves allows us to quantify the density and fluctuations of surface states and estimate the variations in workfunction on the nanometre scale. The simulations corroborate that the high number of surface states leads to Fermi-level pinning of the methylammonium lead iodide surfaces. We do not observe a variation of the local density of states at the grain boundaries compared to the grain interior. These results are in contrast to other reported SPM measurements in literature. Our results show that most of the fluctuations of the electrical properties in these polycrystalline materials arise due to grain to grain variations and not due to distinct electronic properties of the grain boundaries. The measured workfunction changes at the different grains result in local variations of the band alignment with the carrier selective top contact and the varying number of surface states influence the recombination activity in the devices.

All-Perovskite Photodetector with Fast Response

Perovskites have attracted substantial attention on account of their excellent physical properties and simple preparation process. Here we demonstrated an improved photodetector based on solution-processing organic-inorganic hybrid perovskite CH3NH3PbI3-xClx layer decorated with CsPbBr3 perovskite quantum dots. The CH3NH3PbI3-xClx-CsPbBr3 photodetector was operated in a visible light region, which appeared high responsivity (R = 0.39 A/W), detectivity (D* = 5.43 × 109 Jones), carrier mobility (μp = 172 cm2 V-1 s-1 and μn = 216 cm2 V-1 s-1), and fast response (rise time 121 μs and fall time 107 μs). The CH3NH3PbI3-xClx-CsPbBr3 heterostructure is anticipated to find comprehensive applications in future high-performance photoelectronic devices.

Unraveling the Electronic Properties of Lead Halide Perovskites with Surface Photovoltage in Photoemission Studies

The tremendous success of metal-halide perovskites, especially in the field of photovoltaics, has triggered a substantial number of studies in understanding their optoelectronic properties. However, consensus regarding the electronic properties of these perovskites is lacking due to a huge scatter in the reported key parameters, such as work function (Φ) and valence band maximum (VBM) values. Here, we demonstrate that the surface photovoltage (SPV) is a key phenomenon occurring at the perovskite surfaces that feature a non-negligible density of surface states, which is more the rule than an exception for most materials under study. With ultraviolet photoelectron spectroscopy (UPS) and Kelvin probe, we evidence that even minute UV photon fluxes (500 times lower than that used in typical UPS experiments) are sufficient to induce SPV and shift the perovskite Φ and VBM by several 100 meV compared to dark. By combining UV and visible light, we establish flat band conditions (i.e., compensate the surface-state-induced surface band bending) at the surface of four important perovskites, and find that all are p-type in the bulk, despite a pronounced n-type surface character in the dark. The present findings highlight that SPV effects must be considered in all surface studies to fully understand perovskites' photophysical properties.

Energy-level alignment at strongly coupled organic-metal interfaces

Energy-level alignment at organic-metal interfaces plays a crucial role for the performance of organic electronic devices. However, reliable models to predict energetics at strongly coupled interfaces are still lacking. We elucidate contact formation of 1,2,5,6,9,10-coronenehexone (COHON) to the (1 1 1)-surfaces of coinage metals by means of ultraviolet photoelectron spectroscopy, x-ray photoelectron spectroscopy, the x-ray standing wave technique, and density functional theory calculations. While for low COHON thicknesses, the work-functions of the systems vary considerably, for thicker organic films Fermi-level pinning leads to identical work functions of 5.2 eV for all COHON-covered metals irrespective of the pristine substrate work function and the interfacial interaction strength.

Surface Recombination in Ultra-Fast Carrier Dynamics of Perovskite Oxide La0.7Sr0.3MnO3 Thin Films

Aspects of the optoelectronic performance of thin-film ferromagnetic materials are evaluated for application in ultrafast devices. Dynamics of photocarriers and their associated spin polarization are measured using transient reflectivity (TR) measurements in cross linear and circular polarization configurations for La_0.7Sr_0.3MnO₃ films with a range of thicknesses. Three spin-related recombination mechanisms have been observed for thicker films (thickness of d ≥ 20 nm) at different time regimes (τ), which are attributed to the electron-phonon recombination (τ < 1 ps), phonon-assisted spin-lattice recombination (τ ∼ 100 ps), and thermal diffusion and radiative recombination (τ > 1 ns). Density functional theory (DFT+U) based first-principles calculations provide information about the nature of the optical transitions and their probabilities for the majority and the minority spin channels. These transitions are partly responsible for the aforementioned recombination mechanisms, identified through the comparison of linear and circular TR measurements. The same sets of measurements for thinner films (4.4 nm ≤ d < 20 nm) revealed an additional relaxation dynamic (τ ∼ 10 ps), which is attributed to the enhanced surface recombination of charge carriers. Our DFT+U calculations further corroborate this observation, indicating an increase in the surface density of states with decreasing film thickness which results in higher amplitude and smaller time constant for surface recombination as the film thickness decreases.

Halide Perovskites: Is It All about the Interfaces?

Design and modification of interfaces, always a critical issue for semiconductor devices, has become a primary tool to harness the full potential of halide perovskite (HaP)-based optoelectronics, including photovoltaics and light-emitting diodes. In particular, the outstanding improvements in HaP solar cell performance and stability can be primarily ascribed to a careful choice of the interfacial layout in the layer stack. In this review, we describe the unique challenges and opportunities of these approaches (section 1). For this purpose, we first elucidate the basic physical and chemical properties of the exposed HaP thin film and crystal surfaces, including topics such as surface termination, surface reactivity, and electronic structure (section 2). This is followed by discussing experimental results on the energetic alignment processes at the interfaces between the HaP and transport and buffer layers. This section includes understandings reached as well as commonly proposed and applied models, especially the often-questionable validity of vacuum level alignment, the importance of interface dipoles, and band bending as the result of interface formation (section 3). We follow this by elaborating on the impact of the interface formation on device performance, considering effects such as chemical reactions and surface passivation on interface energetics and stability. On the basis of these concepts, we propose a roadmap for the next steps in interfacial design for HaP semiconductors (section 4), emphasizing the importance of achieving control over the interface energetics and chemistry (i.e., reactivity) to allow predictive power for tailored interface optimization.

Constructing the Electronic Structure of CH3NH3PbI3 and CH3NH3PbBr3 Perovskite Thin Films from Single-Crystal Band Structure Measurements

Photovoltaic cells based on halide perovskites, possessing remarkably high power conversion efficiencies have been reported. To push the development of such devices further, a comprehensive and reliable understanding of their electronic properties is essential but presently not available. To provide a solid foundation for understanding the electronic properties of polycrystalline thin films, we employ single-crystal band structure data from angle-resolved photoemission measurements. For two prototypical perovskites (CH₃NH₃PbBr₃ and CH₃NH₃PbI₃), we reveal the band dispersion in two high-symmetry directions and identify the global valence band maxima. With these benchmark data, we construct "standard" photoemission spectra from polycrystalline thin film samples and resolve challenges discussed in the literature for determining the valence band onset with high reliability. Within the framework laid out here, the consistency of relating the energy level alignment in perovskite-based photovoltaic and optoelectronic devices with their functional parameters is substantially enhanced.

Fractional deviations in precursor stoichiometry dictate the properties, performance and stability of perovskite photovoltaic devices

The last five years have witnessed remarkable progress in the field of lead halide perovskite materials and devices. Examining the existing body of literature reveals staggering inconsistencies in the reported results among different research groups with a particularly wide spread in the photovoltaic performance and stability of devices. In this work we demonstrate that fractional, quite possibly unintentional, deviations in the precursor solution stoichiometry can cause significant changes in the properties of the perovskite layer as well as in the performance and stability of perovskite photovoltaic devices. We show that while the absorbance and morphology of the layers remain largely unaffected, the surface composition and energetics, crystallinity, emission efficiency, energetic disorder and storage stability are all very sensitive to the precise stoichiometry of the precursor solution. Our results elucidate the origin of the irreproducibility and inconsistencies of reported results among different groups as well as the wide spread in device performance even within individual studies. Finally, we propose a simple experimental method to identify the exact stoichiometry of the perovskite layer that researchers can employ to confirm their experiments are performed consistently without unintentional variations in precursor stoichiometry.

Defects in metal triiodide perovskite materials towards high-performance solar cells: origin, impact, characterization, and engineering

The progress of defect science in metal triiodide perovskite is critically reviewed, including the origin, impacts, characterization, and engineering.