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Wang Z, Jing X, Duan S, Liu C, Kang D, Xu X, Chen J, Xia Y, Chang B, Zhao C, Zhu B, Xu T, Lin H, Lu W, Ren Y, Sun L, Wu J, Tao L. 2D PtSe 2 Enabled Wireless Wearable Gas Monitoring Circuits with Distinctive Strain-Enhanced Performance. ACS NANO 2023. [PMID: 37294879 DOI: 10.1021/acsnano.3c01582] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
The application of 2D materials-based flexible electronics in wearable scenarios is limited due to performance degradation under strain fields. In contrast to its negative role in existing transistors or sensors, herein, we discover a positive effect of strain to the ammonia detection in 2D PtSe2. Linear modulation of sensitivity is achieved in flexible 2D PtSe2 sensors via a customized probe station with an in situ strain loading apparatus. For trace ammonia absorption, a 300% enhancement in room-temperature sensitivity (31.67% ppm-1) and an ultralow limit of detection (50 ppb) are observed under 1/4 mm-1 curvature strain. We identify three types of strain-sensitive adsorption sites in layered PtSe2 and pinpoint that basal-plane lattice distortion contributes to better sensing performance resulting from reduced absorption energy and larger charge transfer density. Furthermore, we demonstrate state-of-the-art 2D PtSe2-based wireless wearable integrated circuits, which allow real-time gas sensing data acquisition, processing, and transmission through a Bluetooth module to user terminals. The circuits exhibit a wide detection range with a maximum sensitivity value of 0.026 V·ppm-1 and a low energy consumption below 2 mW.
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Affiliation(s)
- Zhehan Wang
- School of Materials Science and Engineering, Southeast University, Nanjing 211189, China
| | - Xu Jing
- School of Materials Science and Engineering, Southeast University, Nanjing 211189, China
| | - Shengshun Duan
- School of Electronic Science and Engineering, Southeast University, Nanjing 210096, China
| | - Chang Liu
- School of Materials Science and Engineering, Southeast University, Nanjing 211189, China
| | - Dingxuan Kang
- School of Materials Science and Engineering, Southeast University, Nanjing 211189, China
| | - Xiao Xu
- School of Materials Science and Engineering, Southeast University, Nanjing 211189, China
| | - Jiayi Chen
- School of Materials Science and Engineering, Southeast University, Nanjing 211189, China
| | - Yier Xia
- School of Electronic Science and Engineering, Southeast University, Nanjing 210096, China
| | - Bo Chang
- School of Materials Science and Engineering, Southeast University, Nanjing 211189, China
| | - Chengdong Zhao
- School of Materials Science and Engineering, Southeast University, Nanjing 211189, China
| | - Beibei Zhu
- School of Materials Science and Engineering, Southeast University, Nanjing 211189, China
| | - Tao Xu
- SEU-FEI Nano-Pico Center, Key Lab of MEMS of Ministry of Education, Southeast University, Nanjing 210096, China
- Center of 2D Materials, Southeast University, Nanjing 211189, China
| | - Huiwen Lin
- School of Materials Science and Engineering, Southeast University, Nanjing 211189, China
| | - Weibing Lu
- Center for Flexible RF Technology, Southeast University, Nanjing 211189, China
| | - Yuan Ren
- School of Materials Science and Engineering, Southeast University, Nanjing 211189, China
| | - Litao Sun
- SEU-FEI Nano-Pico Center, Key Lab of MEMS of Ministry of Education, Southeast University, Nanjing 210096, China
- Center of 2D Materials, Southeast University, Nanjing 211189, China
| | - Jun Wu
- School of Electronic Science and Engineering, Southeast University, Nanjing 210096, China
| | - Li Tao
- School of Materials Science and Engineering, Southeast University, Nanjing 211189, China
- Center of 2D Materials, Southeast University, Nanjing 211189, China
- Center for Flexible RF Technology, Southeast University, Nanjing 211189, China
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Ultrasensitive, stretchable, and transparent humidity sensor based on ion-conductive double-network hydrogel thin films. SCIENCE CHINA MATERIALS 2022; 65:2540-2552. [PMID: 35600911 PMCID: PMC9109751 DOI: 10.1007/s40843-021-2022-1] [Citation(s) in RCA: 8] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 12/13/2021] [Accepted: 03/07/2022] [Indexed: 11/15/2022]
Abstract
Ion-conductive hydrogels with intrinsic biocompatibility, stretchability, and stimuli-responsive capability have attracted considerable attention because of their extensive application potential in wearable sensing devices. The miniaturization and integration of hydrogel-based devices are currently expected to achieve breakthroughs in device performance and promote their practical application. However, currently, hydrogel film is rarely reported because it can be easily wrinkled, torn, and dehydrated, which severely hinders its development in microelectronics. Herein, thin, stretchable, and transparent ion-conductive double-network hydrogel films with controllable thickness are integrated with stretchable elastomer substrates, which show good environmental stability and ultrahigh sensitivity to humidity (78,785.5%/% relative humidity (RH)). Benefiting from the ultrahigh surface-area-to-volume ratio, abundant active sites, and short diffusion distance, the hydrogel film humidity sensor exhibits 2 × 105 times increased response to 98% RH, as well as 5.9 and 7.6 times accelerated response and recovery speeds compared with the bulk counterpart, indicating its remarkable thickness-dependent humidity-sensing properties. The humidity-sensing mechanism reveals that the adsorption of water improves the ion migration and dielectric constant, as well as establishes the electrical double layer. Furthermore, the noncontact human-machine interaction and real-time respiratory frequency detection are enabled by the sensors. This work provides an innovative strategy to achieve further breakthroughs in device performance and promote the development of hydrogel-based miniaturized and integrated electronics.
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Adamu BI, Chen P, Chu W. Role of nanostructuring of sensing materials in performance of electrical gas sensors by combining with extra strategies. NANO EXPRESS 2021. [DOI: 10.1088/2632-959x/ac3636] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/12/2022]
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Kim J, Lee Y, Kang M, Hu L, Zhao S, Ahn JH. 2D Materials for Skin-Mountable Electronic Devices. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2021; 33:e2005858. [PMID: 33998064 DOI: 10.1002/adma.202005858] [Citation(s) in RCA: 20] [Impact Index Per Article: 6.7] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/28/2020] [Revised: 10/08/2020] [Indexed: 06/12/2023]
Abstract
Skin-mountable devices that can directly measure various biosignals and external stimuli and communicate the information to the users have been actively studied owing to increasing demand for wearable electronics and newer healthcare systems. Research on skin-mountable devices is mainly focused on those materials and mechanical design aspects that satisfy the device fabrication requirements on unusual substrates like skin and also for achieving good sensing capabilities and stable device operation in high-strain conditions. 2D materials that are atomically thin and possess unique electrical and optical properties offer several important features that can address the challenging needs in wearable, skin-mountable electronic devices. Herein, recent research progress on skin-mountable devices based on 2D materials that exhibit a variety of device functions including information input and output and in vitro and in vivo healthcare and diagnosis is reviewed. The challenges, potential solutions, and perspectives on trends for future work are also discussed.
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Affiliation(s)
- Jejung Kim
- School of Electrical and Electronic Engineering, Yonsei University, Seoul, 03722, Republic of Korea
| | - Yongjun Lee
- School of Electrical and Electronic Engineering, Yonsei University, Seoul, 03722, Republic of Korea
| | - Minpyo Kang
- School of Electrical and Electronic Engineering, Yonsei University, Seoul, 03722, Republic of Korea
| | - Luhing Hu
- School of Electrical and Electronic Engineering, Yonsei University, Seoul, 03722, Republic of Korea
| | - Songfang Zhao
- School of Electrical and Electronic Engineering, Yonsei University, Seoul, 03722, Republic of Korea
- School of Material Science and Engineering, University of Jinan, Jinan, Shandong, 250022, China
| | - Jong-Hyun Ahn
- School of Electrical and Electronic Engineering, Yonsei University, Seoul, 03722, Republic of Korea
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Xiao P, Mencarelli D, Chavez-Angel E, Joseph CH, Cataldo A, Pierantoni L, Sotomayor Torres CM, Sledzinska M. Reversing the Humidity Response of MoS 2- and WS 2-Based Sensors Using Transition-Metal Salts. ACS APPLIED MATERIALS & INTERFACES 2021; 13:23201-23209. [PMID: 33950679 DOI: 10.1021/acsami.1c03691] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
Two-dimensional materials, such as transition-metal dichalcogenides (TMDs), are attractive candidates for sensing applications due to their high surface-to-volume ratio, chemically active edges, and good electrical properties. However, their electrical response to humidity is still under debate and experimental reports remain inconclusive. For instance, in different studies, the impedance of MoS2-based sensors has been found to either decrease or increase with increasing humidity, compromising the use of MoS2 for humidity sensing. In this work, we focus on understanding the interaction between water and TMDs. We fabricated and studied humidity sensors based on MoS2 and WS2 coated with copper chloride and silver nitrate. The devices exhibited high chemical stability and excellent humidity sensing performance in relative humidity between 4 and 80%, with response and recovery times of 2 and 40 s, respectively. We have systematically investigated the humidity response of the materials as a function of the type and amount of induced metal salt and observed the reverse action of sensing mechanisms. This phenomenon is explained based on a detailed structural analysis of the samples considering the Grotthuss mechanism in the presence of charge trapping, which was represented by an appropriate lumped-element model. Our findings open up a possibility to tune the electrical response in a facile manner and without compromising the high performance of the sensor. They offer an insight into the time-dependent performance and aging of the TMD-based sensing devices.
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Affiliation(s)
- Peng Xiao
- Catalan Institute of Nanoscience and Nanotechnology (ICN2), CSIC and BIST, Campus UAB, Bellaterra, 08193 Barcelona, Spain
- Departamento de Física, Universidad Autónoma de Barcelona, Bellaterra, 08193 Barcelona, Spain
| | - Davide Mencarelli
- Department of Information Engineering, Polytechnic University of Marche, Via Brecce Bianche, 1, 60131 Ancona, Italy
- INFN-Laboratori Nazionali di Frascati, via E. Fermi 40, 00044 Frascati, Italy
| | - Emigdio Chavez-Angel
- Catalan Institute of Nanoscience and Nanotechnology (ICN2), CSIC and BIST, Campus UAB, Bellaterra, 08193 Barcelona, Spain
| | - Christopher Hardly Joseph
- Department of Information Engineering, Polytechnic University of Marche, Via Brecce Bianche, 1, 60131 Ancona, Italy
| | - Antonino Cataldo
- Department of Information Engineering, Polytechnic University of Marche, Via Brecce Bianche, 1, 60131 Ancona, Italy
- INFN-Laboratori Nazionali di Frascati, via E. Fermi 40, 00044 Frascati, Italy
| | - Luca Pierantoni
- Department of Information Engineering, Polytechnic University of Marche, Via Brecce Bianche, 1, 60131 Ancona, Italy
- INFN-Laboratori Nazionali di Frascati, via E. Fermi 40, 00044 Frascati, Italy
| | - Clivia M Sotomayor Torres
- Catalan Institute of Nanoscience and Nanotechnology (ICN2), CSIC and BIST, Campus UAB, Bellaterra, 08193 Barcelona, Spain
- ICREA, Pg. Lluís Companys 23, 08010 Barcelona, Spain
| | - Marianna Sledzinska
- Catalan Institute of Nanoscience and Nanotechnology (ICN2), CSIC and BIST, Campus UAB, Bellaterra, 08193 Barcelona, Spain
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Affiliation(s)
- Rongrong Bao
- CAS Center for Excellence in Nanoscience Beijing Key Laboratory of Micro-nano Energy and Sensor Beijing Institute of Nanoenergy and Nanosystems Chinese Academy of Sciences Beijing 100083 P. R. China
- School of Nanoscience and Technology University of Chinese Academy of Sciences Beijing 100049 P. R. China
- Center on Nanoenergy Research School of Physical Science and Technology Guangxi University Nanning Guangxi 530004 P. R. China
| | - Juan Tao
- CAS Center for Excellence in Nanoscience Beijing Key Laboratory of Micro-nano Energy and Sensor Beijing Institute of Nanoenergy and Nanosystems Chinese Academy of Sciences Beijing 100083 P. R. China
- School of Nanoscience and Technology University of Chinese Academy of Sciences Beijing 100049 P. R. China
- Center on Nanoenergy Research School of Physical Science and Technology Guangxi University Nanning Guangxi 530004 P. R. China
- College of Physics and Optoelectronic Engineering Shenzhen University Shenzhen 518060 P. R. China
| | - Caofeng Pan
- CAS Center for Excellence in Nanoscience Beijing Key Laboratory of Micro-nano Energy and Sensor Beijing Institute of Nanoenergy and Nanosystems Chinese Academy of Sciences Beijing 100083 P. R. China
- School of Nanoscience and Technology University of Chinese Academy of Sciences Beijing 100049 P. R. China
- Center on Nanoenergy Research School of Physical Science and Technology Guangxi University Nanning Guangxi 530004 P. R. China
- College of Physics and Optoelectronic Engineering Shenzhen University Shenzhen 518060 P. R. China
| | - Zhong Lin Wang
- CAS Center for Excellence in Nanoscience Beijing Key Laboratory of Micro-nano Energy and Sensor Beijing Institute of Nanoenergy and Nanosystems Chinese Academy of Sciences Beijing 100083 P. R. China
- School of Materials Science and Engineering Georgia Institute of Technology Atlanta Georgia 30332-0245 USA
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Zong B, Li Q, Chen X, Liu C, Li L, Ruan J, Mao S. Highly Enhanced Gas Sensing Performance Using a 1T/2H Heterophase MoS 2 Field-Effect Transistor at Room Temperature. ACS APPLIED MATERIALS & INTERFACES 2020; 12:50610-50618. [PMID: 33136368 DOI: 10.1021/acsami.0c15162] [Citation(s) in RCA: 27] [Impact Index Per Article: 6.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/22/2023]
Abstract
Monolayer MoS2 (ML-MoS2) with various polymorphic phases attracts growing interests for device applications in recent years. Herein, a field-effect transistor (FET) gas sensor is developed on the basis of monolayer MoS2 with a heterophase of a 1T metallic phase and a 2H semiconducting phase. Lithium-exfoliated MoS2 nanosheets own a monolayer structure with rich active sites for gas adsorption. With thermal annealing from 50 to 300 °C, the initial lithium-exfoliated 1T-phase MoS2 gradually transforms into the 2H phase, during which the 1T and 2H heterophases can be modulated. The 1T/2H heterophase MoS2 shows p-type semiconducting properties and prominent adsorption capability for NO2 molecules. The highest response is observed for 100 °C annealed MoS2 of a 40% 1T phase and a 60% 2H phase, which shows a sensitivity up to 25% toward 2 ppm NO2 at room temperature in a very short time (10 s) and a lower limit of detection down to 25 ppb. This study demonstrates that the gas detection capability of ML-MoS2 could be boosted with the heterophase construction, which brings new insights into transition-metal dichalcogenide gas sensors.
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Affiliation(s)
- Boyang Zong
- Biomedical Multidisciplinary Innovation Research Institute, Shanghai East Hospital, State Key Laboratory of Pollution Control and Resource Reuse, College of Environmental Science and Engineering, Tongji University, 1239 Siping Road, Shanghai 200092, China
- Shanghai Institute of Pollution Control and Ecological Security, Shanghai 200092, China
| | - Qiuju Li
- Biomedical Multidisciplinary Innovation Research Institute, Shanghai East Hospital, State Key Laboratory of Pollution Control and Resource Reuse, College of Environmental Science and Engineering, Tongji University, 1239 Siping Road, Shanghai 200092, China
- Shanghai Institute of Pollution Control and Ecological Security, Shanghai 200092, China
| | - Xiaoyan Chen
- Biomedical Multidisciplinary Innovation Research Institute, Shanghai East Hospital, State Key Laboratory of Pollution Control and Resource Reuse, College of Environmental Science and Engineering, Tongji University, 1239 Siping Road, Shanghai 200092, China
- Shanghai Institute of Pollution Control and Ecological Security, Shanghai 200092, China
| | - Chengbin Liu
- Biomedical Multidisciplinary Innovation Research Institute, Shanghai East Hospital, State Key Laboratory of Pollution Control and Resource Reuse, College of Environmental Science and Engineering, Tongji University, 1239 Siping Road, Shanghai 200092, China
- Shanghai Institute of Pollution Control and Ecological Security, Shanghai 200092, China
| | - Liangchun Li
- Shanghai Key Lab of Chemical Assessment and Sustainability, School of Chemical Science and Engineering, Tongji University, 1239 Siping Road, Shanghai 200092, China
| | - Jian Ruan
- State Key Laboratory of Silicate Materials for Architectures, Specialty Glass Engineering Technology Research Center of Hubei Provinces, Wuhan University of Technology, 122 Luoshi Road, Wuhan 430070, China
| | - Shun Mao
- Biomedical Multidisciplinary Innovation Research Institute, Shanghai East Hospital, State Key Laboratory of Pollution Control and Resource Reuse, College of Environmental Science and Engineering, Tongji University, 1239 Siping Road, Shanghai 200092, China
- Shanghai Institute of Pollution Control and Ecological Security, Shanghai 200092, China
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Zhu P, Ou H, Kuang Y, Hao L, Diao J, Chen G. Cellulose Nanofiber/Carbon Nanotube Dual Network-Enabled Humidity Sensor with High Sensitivity and Durability. ACS APPLIED MATERIALS & INTERFACES 2020; 12:33229-33238. [PMID: 32608963 DOI: 10.1021/acsami.0c07995] [Citation(s) in RCA: 42] [Impact Index Per Article: 10.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
Humidity sensors have been widely used for humidity monitoring in industrial fields, while the unsatisfactory flexibility, time consumption, and expensive integration process of conventional inorganic sensors significantly limit their application in wearable electronics. Using paper-based humidity sensors is considered a feasible method to overcome these drawbacks because of their good flexibility and roll-to-roll manufacturability, while they still face problems such as poor durability and low sensitivity. In this study, we report a high-performance paper-based humidity sensor based on a rationally designed bilayered structure consisting of a nanoporous cellulose nanofiber/carbon nanotube (CNF/CNT) sensitive layer and a microporous paper substrate. The vast number of hydrophilic hydroxyl groups on the surface of CNF and paper fibers enables fast water molecule exchange between the humidity-sensitive material and the external environment via hydrogen bonding, endowing the paper-based sensor with an excellent humidity responsive property. The obtained sensor displays a maximum response value of 65.0% (ΔI/I0) at 95% relative humidity. Furthermore, the mechanical interlocking structure formed between the CNF/CNT layer and the paper layer provides the sensor with strong interlayer adhesion. Benefiting from the unique structure, the sensor also exhibits outstanding bending (with a maximum curvature of 22.2 cm-1) and folding durability (up to 50 times). Finally, as a proof of concept, a simple humidity-measuring device is assembled, which demonstrates an excellent responsive property toward human breath and the change of air humidity, indicating a great potential of our paper-based humidity sensor toward practical applications.
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Affiliation(s)
- Penghui Zhu
- State Key Laboratory of Pulp and Paper Engineering, South China University of Technology, Guangzhou 510640, China
- Guangdong Engineering Technology Research and Development Center of Specialty Paper and Paper-Based Functional Materials, South China University of Technology, Guangzhou 510640, China
| | - Huajie Ou
- State Key Laboratory of Pulp and Paper Engineering, South China University of Technology, Guangzhou 510640, China
- Guangdong Engineering Technology Research and Development Center of Specialty Paper and Paper-Based Functional Materials, South China University of Technology, Guangzhou 510640, China
| | - Yudi Kuang
- School of Biomedical Science and Engineering, South China University of Technology, Guangzhou 510006, China
- National Engineering Research Center for Tissue Restoration and Reconstruction, South China University of Technology, Guangzhou 510006, China
- Innovation Center for Tissue Restoration and Reconstruction, South China University of Technology, Guangzhou 510006, China
| | - Lijing Hao
- School of Biomedical Science and Engineering, South China University of Technology, Guangzhou 510006, China
- National Engineering Research Center for Tissue Restoration and Reconstruction, South China University of Technology, Guangzhou 510006, China
- Innovation Center for Tissue Restoration and Reconstruction, South China University of Technology, Guangzhou 510006, China
| | - Jingjing Diao
- National Engineering Research Center for Tissue Restoration and Reconstruction, South China University of Technology, Guangzhou 510006, China
- Medical Devices Research & Testing Center of SCUT, Guangzhou 510006, China
| | - Gang Chen
- State Key Laboratory of Pulp and Paper Engineering, South China University of Technology, Guangzhou 510640, China
- Guangdong Engineering Technology Research and Development Center of Specialty Paper and Paper-Based Functional Materials, South China University of Technology, Guangzhou 510640, China
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Guo J, Cheng G, Du Z. The recent progress of triboelectric nanogenerator-assisted photodetectors. NANOTECHNOLOGY 2020; 31:292003. [PMID: 32217816 DOI: 10.1088/1361-6528/ab841e] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
Since 2012, triboelectric nanogenerator (TENG) has attracted significant interest from researchers in the field of energy conversion due to its unique output characteristics of high voltage, pulse and low current. In addition, recent advancements have demonstrated that photodetection platforms based on TENG exhibit great advantages such as being simple, low-cost, portable, with high sensitivity, high response, etc, and are environment friendly. Here, this article provides a comprehensive review on the state-of-the-art photodetectors based on TENG in recent years, and a detailed introduction to the structural design and potential mechanisms. It mainly focuses on self-powered photodetectors (including photodetectors as a load resistance of a TENG and photosensitive materials such as tribo-layer of TENG) and the modulation of photodetectors based on TENG (including utilizing the voltage of TENG as well as triboelectric microplasma). Finally, we put forward some perspectives and outlook, including structure engineering and mechanism guidance, for the future development of simple, high-performance and portable photodetectors based on TENG.
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Affiliation(s)
- Junmeng Guo
- Key Lab for Special Functional Materials, Ministry of Education, National & Local Joint Engineering Research Center for High-efficiency Display and Lighting Technology, School of Materials Science and Engineering, and Collaborative Innovation Center of Nano Functional Materials and Applications, Henan University, Kaifeng 475004, People's Republic of China
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1T/2H-MoS2 engineered by in-situ ethylene glycol intercalation for improved toluene sensing response at room temperature. ADV POWDER TECHNOL 2020. [DOI: 10.1016/j.apt.2020.02.022] [Citation(s) in RCA: 13] [Impact Index Per Article: 3.3] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/10/2023]
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Ghasemian MB, Daeneke T, Shahrbabaki Z, Yang J, Kalantar-Zadeh K. Peculiar piezoelectricity of atomically thin planar structures. NANOSCALE 2020; 12:2875-2901. [PMID: 31984979 DOI: 10.1039/c9nr08063e] [Citation(s) in RCA: 17] [Impact Index Per Article: 4.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
The emergence of piezoelectricity in two-dimensional (2D) materials has represented a milestone towards employing low-dimensional structures for future technologies. 2D piezoelectric materials possess unique and unprecedented characteristics that cannot be found in other morphologies; therefore, the applications of piezoelectricity can be substantially extended. By reducing the thickness into the 2D realm, piezoelectricity might be induced in otherwise non-piezoelectric materials. The origin of the enhanced piezoelectricity in such thin planes is attributed to the loss of centrosymmetry, altered carrier concentration, and change in local polarization and can be efficiently tailored via surface modifications. Access to such materials is important from a fundamental research point of view, to observe the extraordinary interactions between free charge carriers, phonons and photons, and also with respect to device development, for which planar structures provide the required compatibility with the large-scale fabrication technologies of integrated circuits. The existence of piezoelectricity in 2D materials presents great opportunities for applications in various fields of electronics, optoelectronics, energy harvesting, sensors, actuators and biotechnology. Additionally, 2D flexible nanostructures with superior piezoelectric properties are distinctive candidates for integration into nano-scale electromechanical systems. Here we fundamentally review the state of the art of 2D piezoelectric materials from both experimental and theoretical aspects and report the recent achievements in the synthesis, characterization and applications of these materials.
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Affiliation(s)
- Mohammad B Ghasemian
- School of Chemical Engineering, University of New South Wales (UNSW), Sydney Campus, NSW 2052, Australia.
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Lin J, Fang H, Tan X, Sun B, Wang Z, Deng H, Liu H, Tang Z, Liao G, Shi T. Ultrafast Self-Assembly MoS 2/Cu(OH) 2 Nanowires for Highly Sensitive Gamut Humidity Detection with an Enhanced Self-Recovery Ability. ACS APPLIED MATERIALS & INTERFACES 2019; 11:46368-46378. [PMID: 31714054 DOI: 10.1021/acsami.9b17155] [Citation(s) in RCA: 4] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
Humidity sensors have attracted intense interest in various fields because of the importance of humidity detection. Different methods have been adopted to enhance sensing performances of humidity sensors, while it is challenging for researchers to avoid the invalidation of the sensors after being wet. Here, we, for the first time, introduce self-assembly MoS2/Cu(OH)2 nanowires fabricated by liquid self-spreading-coating-evaporating as sensing materials and present MoS2/Cu(OH)2 nanowire-based quartz crystal microbalance gamut humidity sensors with superior sensitivity and self-recovery ability. The sensors deliver a remarkable sensitivity (60.8 Hz/% RH) under a wide range (0-97% RH) with fast response (1.9 s)/recovery time (3.8 s) and upgrade self-recovery ability that can maintain their original performances even after being wet, frozen, and heated or immersed in water. The sensors are also employed to monitor water counting, dew alarming, and human breathing (within 4 s), further showing their ultrahigh sensitivity for water molecules. The underlying humidity-sensing mechanism is interpreted by density functional theory calculations and in-situ Fourier transform infrared spectra experiments adequately, revealing that the high sensing performances are attributed to abundant adsorption sites and physisorption of water molecules. Our work proposes a strategy for transferring materials to arbitrary nanostructures swiftly and demonstrates new perspectives for highly sensitive humidity detection as well as self-recovery ability.
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Affiliation(s)
| | | | | | | | | | | | - Huan Liu
- Shenzhen Huazhong University of Science and Technology Research Institute , Shenzhen Virtual University Park , Shenzhen 518000 , PR China
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Lee GJ, Lee MK, Park JJ, Hyeon DY, Jeong CK, Park KI. Piezoelectric Energy Harvesting from Two-Dimensional Boron Nitride Nanoflakes. ACS APPLIED MATERIALS & INTERFACES 2019; 11:37920-37926. [PMID: 31549809 DOI: 10.1021/acsami.9b12187] [Citation(s) in RCA: 29] [Impact Index Per Article: 5.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
Two-dimensional (2D) piezoelectric hexagonal boron nitride nanoflakes (h-BN NFs) were synthesized by a mechanochemical exfoliation process and transferred onto an electrode line-patterned plastic substrate to characterize the energy harvesting ability of individual NFs by external stress. A single BN NF produced alternate piezoelectric output sources of ∼50 mV and ∼30 pA when deformed by mechanical bendings. The piezoelectric voltage coefficient (g11) of a single BN NF was experimentally determined to be 2.35 × 10-3 V·m·N-1. The piezoelectric composite composed of BN NFs and an elastomer was spin-coated onto a bulk Si substrate and then transferred onto the electrode-coated plastic substrates to fabricate a BN NFs-based flexible piezoelectric energy harvester (f-PEH) which converted a piezoelectric voltage of ∼9 V, a current of ∼200 nA, and an effective output power of ∼0.3 μW. This result provides a new strategy for precisely characterizing the energy generation ability of piezoelectric nanostructures and for demonstrating f-PEH based on 2D piezomaterials.
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Affiliation(s)
- Gyoung-Ja Lee
- Sensor System Research Team , Korea Atomic Energy Research Institute , 111 Daedeok-daero, 989 Beon-gil , Yuseong-gu, Daejeon 34057 , Republic of Korea
| | - Min-Ku Lee
- Sensor System Research Team , Korea Atomic Energy Research Institute , 111 Daedeok-daero, 989 Beon-gil , Yuseong-gu, Daejeon 34057 , Republic of Korea
| | - Jin-Ju Park
- Sensor System Research Team , Korea Atomic Energy Research Institute , 111 Daedeok-daero, 989 Beon-gil , Yuseong-gu, Daejeon 34057 , Republic of Korea
| | - Dong Yeol Hyeon
- School of Materials Science and Engineering , Kyungpook National University , 80 Daehak-ro , Buk-gu, Daegu 41566 , Republic of Korea
| | | | - Kwi-Il Park
- School of Materials Science and Engineering , Kyungpook National University , 80 Daehak-ro , Buk-gu, Daegu 41566 , Republic of Korea
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Tabatabaei SM, Farshchi-Heydari MJ, Asad M, Fathipour M. Unravelling the physisorption characteristics of H 2S molecule on biaxially strained single-layer MoS 2. NANOSCALE ADVANCES 2019; 1:3452-3462. [PMID: 36133570 PMCID: PMC9419238 DOI: 10.1039/c9na00069k] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.6] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/03/2019] [Accepted: 06/15/2019] [Indexed: 06/14/2023]
Abstract
Sensing ultra-low levels of toxic chemicals such as H2S is crucial for many technological applications. In this report, employing density functional theory (DFT) calculations, we shed light on the underlying physical phenomena involved in the adsorption and sensing of the H2S molecule on both pristine and strained single-layer molybdenum disulfide (SL-MoS2) substrates. We demonstrate that the H2S molecule is physisorbed on SL-MoS2 for all values of strain, i.e. from -8% to +8%, with a modest electron transfer, ranging from 0.023e- to 0.062e-, from the molecule to the SL-MoS2. According to our calculations, the electron-donating behaviour of the H2S molecule is halved under compressive strains. Moreover, we calculate the optical properties upon H2S adsorption and reveal the electron energy loss (EEL) spectra for various concentrations of the H2S molecule which may serve as potential probes for detecting H2S molecules in prospective sensing applications based on SL-MoS2.
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Affiliation(s)
- Seyed-Mohammad Tabatabaei
- School of Electrical and Computer Engineering, University College of Engineering, University of Tehran Tehran 14395-515 Iran
| | - Mohammad-Javad Farshchi-Heydari
- School of Electrical and Computer Engineering, University College of Engineering, University of Tehran Tehran 14395-515 Iran
- Department of Mechanical Engineering, K. N. Toosi University of Technology Tehran 15875-4416 Iran
| | - Mohsen Asad
- Department of Electrical and Computer Engineering, University of Waterloo 200 University Avenue Waterloo Ontario Canada N2L 3G1
- Waterloo Institute for Nanotechnology, University of Waterloo 200 University Avenue Waterloo Ontario Canada N2L 3G1
| | - Morteza Fathipour
- School of Electrical and Computer Engineering, University College of Engineering, University of Tehran Tehran 14395-515 Iran
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15
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Pan C, Zhai J, Wang ZL. Piezotronics and Piezo-phototronics of Third Generation Semiconductor Nanowires. Chem Rev 2019; 119:9303-9359. [PMID: 31364835 DOI: 10.1021/acs.chemrev.8b00599] [Citation(s) in RCA: 68] [Impact Index Per Article: 13.6] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/28/2022]
Abstract
With the fast development of nanoscience and nanotechnology in the last 30 years, semiconductor nanowires have been widely investigated in the areas of both electronics and optoelectronics. Among them, representatives of third generation semiconductors, such as ZnO and GaN, have relatively large spontaneous polarization along their longitudinal direction of the nanowires due to the asymmetric structure in their c-axis direction. Two-way or multiway couplings of piezoelectric, photoexcitation, and semiconductor properties have generated new research areas, such as piezotronics and piezo-phototronics. In this review, an in-depth discussion of the mechanisms and applications of nanowire-based piezotronics and piezo-phototronics is presented. Research on piezotronics and piezo-phototronics has drawn much attention since the effective manipulation of carrier transport, photoelectric properties, etc. through the application of simple mechanical stimuli and, conversely, since the design of new strain sensors based on the strain-induced change in semiconductor properties.
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Affiliation(s)
- Caofeng Pan
- CAS Center for Excellence in Nanoscience, Beijing Key Laboratory of Micro-nano Energy and Sensor, Beijing Institute of Nanoenergy and Nanosystems , Chinese Academy of Sciences , Beijing 100083 , P. R. China.,School of Nanoscience and Technology , University of Chinese Academy of Sciences , Beijing 100049 , P. R. China
| | - Junyi Zhai
- CAS Center for Excellence in Nanoscience, Beijing Key Laboratory of Micro-nano Energy and Sensor, Beijing Institute of Nanoenergy and Nanosystems , Chinese Academy of Sciences , Beijing 100083 , P. R. China.,School of Nanoscience and Technology , University of Chinese Academy of Sciences , Beijing 100049 , P. R. China
| | - Zhong Lin Wang
- CAS Center for Excellence in Nanoscience, Beijing Key Laboratory of Micro-nano Energy and Sensor, Beijing Institute of Nanoenergy and Nanosystems , Chinese Academy of Sciences , Beijing 100083 , P. R. China.,School of Nanoscience and Technology , University of Chinese Academy of Sciences , Beijing 100049 , P. R. China.,School of Material Science and Engineering , Georgia Institute of Technology , Atlanta , Georgia 30332 , United States
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16
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Abstract
Flexible sensors have the potential to be seamlessly applied to soft and irregularly shaped surfaces such as the human skin or textile fabrics. This benefits conformability dependant applications including smart tattoos, artificial skins and soft robotics. Consequently, materials and structures for innovative flexible sensors, as well as their integration into systems, continue to be in the spotlight of research. This review outlines the current state of flexible sensor technologies and the impact of material developments on this field. Special attention is given to strain, temperature, chemical, light and electropotential sensors, as well as their respective applications.
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17
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Pang H, Huang P, Zhuo W, Li M, Gao C, Guo D. Hysteresis and its impact on characterization of mechanical properties of suspended monolayer molybdenum-disulfide sheets. Phys Chem Chem Phys 2019; 21:7454-7461. [PMID: 30892298 DOI: 10.1039/c8cp07158f] [Citation(s) in RCA: 5] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
The hysteresis phenomenon frequently arises in two-dimensional (2D) material nanoindentation, which is generally expected to be excluded from characterizing the elastic properties due to the imperfect elastic behaviour. However, the underlying mechanism of hysteresis and its effect on the characterization of the mechanical properties of 2D materials remain unclear. Cyclic loadings are exerted on the suspended monolayer molybdenum-disulfide (MoS2) films in atomic force microscopy (AFM) nanoindentation experiments. The elastic hysteresis loops are observed for most of the force-displacement curves. The friction/wear between the AFM silicon tip and the MoS2 monolayer is deemed to be dominant compared to the friction between the monolayer and the silicon dioxide substrate after the analysis, as determined using the finite element method (FEM) simulation. The loading force-displacement curves instead of the unloading curves have been used to deduce the elastic mechanical properties using a modified regression equation. The mean value of the obtained Young's modulus of monolayer MoS2, E, is equal to 209 ± 18 GPa, which is close to the inherent stiffness value, predicted by first principles calculation. Our results have confirmed that it is not obligatory to exclude the sample data with hysteresis behaviour for characterizing the elastic properties of 2D materials. In addition, all sample sheets have finally been penetrated and the mean breaking stress value, σmax, is 36.6 ± 0.9 GPa, determined using the radius value of the worn tip. Furthermore, the effect of the loading force and the shape/size of the suspended monolayer MoS2 sheets on the hysteresis behaviour in the 2D nanoindentation have also been analyzed and discussed, exhibiting interesting trends. Our findings provide guidance for the characterization of the mechanical properties of 2D materials using the AFM nanoindentation and the experimental samples with elastic hysteresis behaviour.
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Affiliation(s)
- Haosheng Pang
- School of Mechanical Engineering and Automation, Fuzhou University, Fuzhou 350108, Fujian, China.
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18
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Guo J, Wen R, Zhai J, Wang ZL. Enhanced NO 2 gas sensing of a single-layer MoS 2 by photogating and piezo-phototronic effects. Sci Bull (Beijing) 2019; 64:128-135. [PMID: 36659636 DOI: 10.1016/j.scib.2018.12.009] [Citation(s) in RCA: 31] [Impact Index Per Article: 6.2] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 10/24/2018] [Revised: 11/12/2018] [Accepted: 11/30/2018] [Indexed: 01/21/2023]
Abstract
NO2 sensors with ultrahigh sensitivity are demanded for future electronic sensing systems. However, traditional sensors are considerably limited by the relative low sensitivity, high cost and complicated process. Here, we report a simply and reliable flexible NO2 sensor based on single-layer MoS2. The flexible sensor exhibits high sensitivity to NO2 gas due to ultra-large specific surface area and the nature of two-dimensional (2D) semiconductor. When the NO2 is 400 ppb (parts per billion), compared with the dark and strain-free conditions, the sensitivity of the single-layer sensor is enhanced to 671% with a 625 nm red light-emitting diode (LED) illumination of 4 mW/cm2 power under 0.67% tensile strain. More important, the response time is dramatically reduced to ∼16 s and it only needs ∼65 s to complete 90% recovery. A theoretical model is proposed to discuss the microscopic mechanisms. We find that the remarkable sensing characteristics are the result of coupling among piezoelectricity, photoelectricity and adsorption-desorption induced charges transfer in the single-layer MoS2 Schottky junction based device. Our work opens up the way to further enhancements in the sensitivity of gas sensor based on single-layer MoS2 by introducing photogating and piezo-phototronic effects in mesoscopic systems.
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Affiliation(s)
- Junmeng Guo
- CAS Center for Excellence in Nanoscience, Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences, Beijing 100083, China; School of Nanoscience and Technology, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Rongmei Wen
- CAS Center for Excellence in Nanoscience, Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences, Beijing 100083, China; School of Nanoscience and Technology, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Junyi Zhai
- CAS Center for Excellence in Nanoscience, Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences, Beijing 100083, China; School of Nanoscience and Technology, University of Chinese Academy of Sciences, Beijing 100049, China; Center on Nanoenergy Research, School of Physical Science and Technology, Guangxi University, Nanning 530004, China.
| | - Zhong Lin Wang
- CAS Center for Excellence in Nanoscience, Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences, Beijing 100083, China; School of Nanoscience and Technology, University of Chinese Academy of Sciences, Beijing 100049, China; School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, GA 30332, USA.
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19
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Nardi MV, Timpel M, Ligorio G, Zorn Morales N, Chiappini A, Toccoli T, Verucchi R, Ceccato R, Pasquali L, List-Kratochvil EJW, Quaranta A, Dirè S. Versatile and Scalable Strategy To Grow Sol-Gel Derived 2H-MoS 2 Thin Films with Superior Electronic Properties: A Memristive Case. ACS APPLIED MATERIALS & INTERFACES 2018; 10:34392-34400. [PMID: 30221920 DOI: 10.1021/acsami.8b12596] [Citation(s) in RCA: 7] [Impact Index Per Article: 1.2] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/08/2023]
Abstract
Transition metal dichalcogenides, such as molybdenum disulfide (MoS2), show peculiar chemical/physical properties that enable their use in applications ranging from micro- and nano-optoelectronics to surface catalysis, gas and light detection, and energy harvesting/production. One main limitation to fully harness the potential of MoS2 is given by the lack of scalable and low environmental impact synthesis of MoS2 films with high uniformity, hence setting a significant challenge for industrial applications. In this work, we develop a versatile and scalable sol-gel-derived MoS2 film fabrication by spin coating deposition of an aqueous sol on different technologically relevant, flexible substrates with annealing at low temperatures (300 °C) and without the need of sulfurization and/or supply of hydrogen as compared to cutting-edge techniques. The electronic and physical properties of the MoS2 thin films were extensively investigated by means of surface spectroscopy and structural characterization techniques. Spatially homogenous nanocrystalline 2H-MoS2 thin films were obtained exhibiting high chemical purity and excellent electronic properties such as an energy band gap of 1.35 eV in agreement with the 2H phase of the MoS2, and a density of states that corresponds to the n-type character expected for high-quality 2H-MoS2. The potential use of sol-gel-grown MoS2 as the candidate material for electronic applications was tested via electrical characterization and demonstrated via the reversible switching in resistivity typical for memristors with a measured ON-OFF ratio ≥102. The obtained results highlight that the novel low-cost fabrication method has a great potential to promote the use of high-quality MoS2 in technological and industrial-relevant scalable applications.
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Affiliation(s)
- Marco V Nardi
- Department of Industrial Engineering , University of Trento , Via Sommarive 9 , 38123 Trento , Italy
| | - Melanie Timpel
- Department of Industrial Engineering , University of Trento , Via Sommarive 9 , 38123 Trento , Italy
| | - Giovanni Ligorio
- Institut für Physik, Institut für Chemie & IRIS Adlershof , Humboldt-Universität zu Berlin , Brook-Taylor Straße 6 , 12489 Berlin , Germany
| | - Nicolas Zorn Morales
- Institut für Physik, Institut für Chemie & IRIS Adlershof , Humboldt-Universität zu Berlin , Brook-Taylor Straße 6 , 12489 Berlin , Germany
| | - Andrea Chiappini
- CNR-IFN, CSMFO Lab. , Via Alla Cascata 56/C , 38123 Trento , Italy
| | - Tullio Toccoli
- Istituto dei Materiali per l'Elettronica ed il Magnetismo, IMEM-CNR, Sezione di Trento , Via alla Cascata 56/C , Povo, 38100 Trento , Italy
| | - Roberto Verucchi
- Istituto dei Materiali per l'Elettronica ed il Magnetismo, IMEM-CNR, Sezione di Trento , Via alla Cascata 56/C , Povo, 38100 Trento , Italy
| | - Riccardo Ceccato
- Department of Industrial Engineering , University of Trento , Via Sommarive 9 , 38123 Trento , Italy
| | - Luca Pasquali
- IOM-CNR Institute , Area Science Park, SS 14 Km, 163.5 , Basovizza, 34149 Trieste , Italy
- Engineering Department "E. Ferrari" , University of Modena e Reggio Emilia , Via Vigolese 905 , 41125 Modena , Italy
- Department of Physics , University of Johannesburg , P.O. Box 524, Auckland Park 2006 , South Africa
| | - Emil J W List-Kratochvil
- Institut für Physik, Institut für Chemie & IRIS Adlershof , Humboldt-Universität zu Berlin , Brook-Taylor Straße 6 , 12489 Berlin , Germany
| | - Alberto Quaranta
- Department of Industrial Engineering , University of Trento , Via Sommarive 9 , 38123 Trento , Italy
| | - Sandra Dirè
- Department of Industrial Engineering , University of Trento , Via Sommarive 9 , 38123 Trento , Italy
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20
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Tai KL, Huang GM, Huang CW, Tsai TC, Lee SK, Lin TY, Lo YC, Wu WW. Observing phase transformation in CVD-grown MoS 2via atomic resolution TEM. Chem Commun (Camb) 2018; 54:9941-9944. [PMID: 30116815 DOI: 10.1039/c8cc05129a] [Citation(s) in RCA: 9] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
We utilized in situ transmission electron microscopy to observe phase transformation in CVD-grown MoS2. Significantly, the reaction was performed under electron irradiation through appropriate control of the electron dose and exposure time. Moreover, we proposed a new route between the 2H and 1T phases that involved the higher energy states TS1/TS2.
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Affiliation(s)
- Kuo-Lun Tai
- Department of Materials Science and Engineering, National Chiao Tung University, Hsinchu 300, Taiwan.
| | - Guan-Min Huang
- Department of Materials Science and Engineering, National Chiao Tung University, Hsinchu 300, Taiwan.
| | - Chun-Wei Huang
- Department of Materials Science and Engineering, National Chiao Tung University, Hsinchu 300, Taiwan.
| | - Tsung-Chun Tsai
- Department of Materials Science and Engineering, National Chiao Tung University, Hsinchu 300, Taiwan.
| | - Shih-Kuang Lee
- Department of Materials Science and Engineering, National Chiao Tung University, Hsinchu 300, Taiwan.
| | - Ting-Yi Lin
- Department of Materials Science and Engineering, National Chiao Tung University, Hsinchu 300, Taiwan.
| | - Yu-Chieh Lo
- Department of Materials Science and Engineering, National Chiao Tung University, Hsinchu 300, Taiwan.
| | - Wen-Wei Wu
- Department of Materials Science and Engineering, National Chiao Tung University, Hsinchu 300, Taiwan. and Frontier Research Center on Fundamental and Applied Sciences of Matters, National Tsing Hua University, Hsinchu 30013, Taiwan and Center for Emergent Functional Matter Science, National Chiao Tung University, Hsinchu 30010, Taiwan
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