Daylight-Induced Metal-Insulator Transition in Ag-Decorated Vanadium Dioxide Nanorod Arrays

Effects of oxygen vacancies and interfacial strain on the metal-insulator transition of VO2 nanobeams

The role of oxygen vacancies and interfacial strain on the metal-insulator transition (MIT) behavior of high-quality VO2 nanobeams (NBs) synthesized on SiO2/Si substrates employing V2O5 as a precursor has been investigated in this research. Selective oxygen vacancies have been generated by argon plasma irradiation. The MIT is progressively suppressed as the duration of plasma processing increases; in addition, the temperature of MIT (TMIT) drops by up to 95 K relative to the pristine VO2 NBs. Incorporating oxygen vacancies into VO2 may increase its electron concentration, which might shift the Fermi levels upward, strengthen the electronic orbital overlap of the V-V chains, and further stabilize the metallic phase at lower temperatures, based on first-principles calculations. Furthermore, in order to evaluate the influence of substrate-induced strain in our situation, the MIT in two distinct types of VO2 NB samples is examined without metal contacts by using the distinctive light scattering characteristics of the metal (M) and insulator (I) phases (i.e., M/I domains) by optical microscopy. It is found that the domain structures in the "clamped" NBs persisted up to ∼453 K, while the "released" NBs (transferred to a new substrate) did not exhibit any domain structures and turned into an entirely M phase with a dark contrast above ∼348 K. When combined with first-principles calculations, the electronic orbital occupancy in the rutile phase contributes to explaining the interfacial strain-induced modulation of MIT. The current findings shed light on how interfacial strain and oxygen vacancies impact MIT behavior. It also suggests several types of control strategies for MIT in VO2 NBs, which are essential for a broader spectrum of VO2 NB applications.

Nanoelectronics Using Metal-Insulator Transition

Metal-insulator transition (MIT) coupled with an ultrafast, significant, and reversible resistive change in Mott insulators has attracted tremendous interest for investigation into next-generation electronic and optoelectronic devices, as well as a fundamental understanding of condensed matter systems. Although the mechanism of MIT in Mott insulators is still controversial, great efforts have been made to understand and modulate MIT behavior for various electronic and optoelectronic applications. In this review, recent progress in the field of nanoelectronics utilizing MIT is highlighted. A brief introduction to the physics of MIT and its underlying mechanisms is begun. After discussing the MIT behaviors of various Mott insulators, recent advances in the design and fabrication of nanoelectronics devices based on MIT, including memories, gas sensors, photodetectors, logic circuits, and artificial neural networks are described. Finally, an outlook on the development and future applications of nanoelectronics utilizing MIT is provided. This review can serve as an overview and a comprehensive understanding of the design of MIT-based nanoelectronics for future electronic and optoelectronic devices.

Predictable and adjustable broadband gold nanorods for photothermal effects and foldable performances

Colloidal gold nanorods (GNRs) have demonstrated their potential to absorb light within specific wavelength bands and induce photothermal effects. However, the unpredictability and lack of adjustability in the broadband spectrum formed by the self-assembly of gold nanospheres or the coupling of various sizes of GNRs have posed significant challenges. To address this, we have developed broadband GNRs (BGNRs) with a predictable and adjustable extinction band in the visible and near-infrared regions. The BGNRs were synthesized by simply mixing GNRs with different aspect ratios, allowing for control over the bandwidths and positions of the extinction bands. Subsequently, the BGNRs were coated with silica and underwent surface modification. The resulting BGNRs@SiO2were then mixed with either polydimethylsiloxane (PDMS) or polyvinylidene fluoride (PVDF) to create BGNRs@SiO2/PDMS (or PVDF) films. The BGNRs@SiO2/PDMS and BGNRs@SiO2/PVDF films both exhibit excellent photothermal performance properties. Additionally, the light absorption intensity of the BGNRs@SiO2/PVDF film linearly increases upon folding, leading to significantly enhanced photothermal performance after folding. This work demonstrates that plasmonic colloidal GNRs, without the need for coupling, can yield predictable and adjustable extinction bands. This finding holds great promise for future development and practical applications, particularly in the transfer of these properties to films.

Plasmonic Nanostructure Engineering with Shadow Growth

Physical shadow growth is a vacuum deposition technique that permits a wide variety of 3D-shaped nanoparticles and structures to be fabricated from a large library of materials. Recent advances in the control of the shadow effect at the nanoscale expand the scope of nanomaterials from spherical nanoparticles to complex 3D shaped hybrid nanoparticles and structures. In particular, plasmonically active nanomaterials can be engineered in their shape and material composition so that they exhibit unique physical and chemical properties. Here, the recent progress in the development of shadow growth techniques to realize hybrid plasmonic nanomaterials is discussed. The review describes how fabrication permits the material response to be engineered and highlights novel functions. Potential fields of application with a focus on photonic devices, biomedical, and chiral spectroscopic applications are discussed.

Nanostructured Vanadium Dioxide Materials for Optical Sensing Applications

Vanadium dioxide (VO2) is one of the strongly correlated materials exhibiting a reversible insulator-metal phase transition accompanied by a structural transition from a low-temperature monoclinic phase to high-temperature rutile phase near room temperature. Due to the dramatic change in electrical resistance and optical transmittance of VO2, it has attracted considerable attention towards the electronic and optical device applications, such as switching devices, memory devices, memristors, smart windows, sensors, actuators, etc. The present review provides an overview of several methods for the synthesis of nanostructured VO2, such as solution-based chemical approaches (sol-gel process and hydrothermal synthesis) and gas or vapor phase synthesis techniques (pulsed laser deposition, sputtering method, and chemical vapor deposition). This review also presents stoichiometry, strain, and doping engineering as modulation strategies of physical properties for nanostructured VO2. In particular, this review describes ultraviolet-visible-near infrared photodetectors, optical switches, and color modulators as optical sensing applications associated with nanostructured VO2 materials. Finally, current research trends and perspectives are also discussed.

Nonvolatile Control of Metal-Insulator Transition in VO2 by Ferroelectric Gating

Controlling phase transitions in correlated materials yields emergent functional properties, providing new aspects to future electronics and a fundamental understanding of condensed matter systems. With vanadium dioxide (VO₂ ), a representative correlated material, an approach to control a metal-insulator transition (MIT) behavior is developed by employing a heteroepitaxial structure with a ferroelectric BiFeO₃ (BFO) layer to modulate the interaction of correlated electrons. Owing to the defect-alleviated interfaces, the enhanced coupling between the correlated electrons and ferroelectric polarization is successfully demonstrated by showing a nonvolatile control of MIT of VO₂ at room temperature. The ferroelectrically-tunable MIT can be realized through the Mott transistor (VO₂ /BFO/SrRuO₃ ) with a remanent polarization of 80 µC cm^-2 , leading to a nonvolatile MIT behavior through the reversible electrical conductance with a large on/off ratio (≈10² ), long retention time (≈10⁴ s), and high endurance (≈10³ cycles). Furthermore, the structural phase transition of VO₂ is corroborated by ferroelectric polarization through in situ Raman mapping analysis. This study provides novel design principles for heteroepitaxial correlated materials and innovative insight to modulate multifunctional properties.

Ultrafast and large optical nonlinearity of a TiSe2 saturable absorber in the 2 μm wavelength region

The non-equilibrium state of correlated electron materials is crucial for both scientific research and practical applications in optoelectronic and photonic devices. Because of the weak optical nonlinearity of most materials even under a dense optical excitation, it is desirable to achieve a significant nonlinear optical response with ultrafast and large optical nonlinearity utilizing a common material. Here, an ultrafast response and large optical nonlinearity induced by non-equilibrium electrons in typical transition metal dichalcogenides, TiSe2, are investigated in the 1.55-2.0 μm wavelength region. Significantly, we observe an ultrafast transient dynamics of 491 femtoseconds as well as a large optical nonlinearity with a saturable coefficient of -0.17 cm GW-1 (1.55 μm) and -0.10 cm GW-1 (2.0 μm). Upon increasing pump fluence, TiSe2 exhibits an enhanced bleaching response amplitude up to 563%. Furthermore, a stable Q-switched fiber laser in the 2.0 μm wavelength region is achieved by employing the TiSe2-saturable absorber. The findings offer the potential design to enhance the optical nonlinearity via non-equilibrium electrons for advanced photonic devices.