Defect Passivation by Amide-Based Hole-Transporting Interfacial Layer Enhanced Perovskite Grain Growth for Efficient p-i-n Perovskite Solar Cells

Bicyclopentadithiophene-Based Organic Semiconductor for Stable and High-Performance Perovskite Solar Cells Exceeding 22

Well-performing organic-inorganic halide perovskites are susceptible to poor efficiency and instability due to their various defects at the interphases, grain boundaries (GBs), and surfaces. In this study, an in situ method is utilized for effectively passivating the under-coordinated Pb2+ defects of perovskite with new non-fullerene acceptors (NFAs) (INXBCDT; X = H, Cl, and Br) through their carbonyl and cyano functional groups during the antisolvent dripping process. It reveals that the bicyclopentadithiophene (BCDT) core with highly electron-withdrawing end-capping groups passivates GBs and boosts perovskite grain growth. This effective defect passivation decreases the trap density to increase the carrier recombination lifetime of the perovskite film. As a result, bromo-substituted dicyanomethylene indanone (INBr)-end-capped BCDT (INBrBCDT-b8; 3a)-passivated devices exhibit the highest power conversion efficiency (PCE) of 22.20% (vs those of 18.09% obtained for perovskite films without passivation) upon an optimized film preparation process. Note that devices treated with more soluble 2-ethylhexyl-substituted compounds (1a, 2a, and 3a) exhibit higher PCE than those treated with less soluble octyl-substituted compounds (1b, 2b, and 3b). It is also worth noting that BCDT is a cost-effective six-ring core that is easier to synthesize with a higher yield and therefore much cheaper than those with highly fused-ring cores. In addition, a long-term stability test in a glovebox for 1500 h reveals that the perovskite solar cells (PSCs) based on a perovskite absorber treated with compound 3a maintain ∼90% of their initial PCE. This is the first example of the simplest high-conjugation additive for perovskite film to achieve a PCE greater than 22% of the corresponding lead-based PSCs.

Improving the Stability and Efficiency of Perovskite Solar Cells by a Bidentate Anilinium Salt

We report improvement in the perovskite solar cell efficiency and stability after passivation with an organic molecule decorated with two anilinium cations. We compare this salt with its neutral analog and found that the change in the electron density distribution upon protonation and the presence of the halide anion are key to explaining the better passivation ability of the salt. In addition, we show that the counteranion has a significant impact on the performance of the device.

Dual-Functional Enantiomeric Compounds as Hole-Transporting Materials and Interfacial Layers in Perovskite Solar Cells

In this paper, we describe the application of the enantiomeric compounds YLC-1-YLC-4, each featuring a bulky spiro[fluorene-9,9'-phenanthren]-10'-one moiety, as both hole-transporting materials (HTMs) and interfacial layers in both n-i-p and p-i-n perovskite solar cells (PSCs). These HTMs contain an enantiomeric mixture and a variety of core units linked to triarylamine donors to extend the degree of π-conjugation. The n-i-p PSCs incorporating YLC-1(a) exhibited a power conversion efficiency (PCE) of 19.15% under AM 1.5G conditions (100 mW cm^-2); this value was comparable with that obtained using spiro-OMeTAD as the HTM (18.25%). We obtained efficient and stable p-i-n PSCs having the dopant-free structure indium tin oxide (ITO)/NiO_x/interfacial layer (YLC)/perovskite/PC₆₁BM/BCP/Ag. The presence of the spiro-based compounds YLC-1 and YLC-2 efficiently passivated the interfacial and grain boundary defects of the perovskite and enhanced the sizes of its grains, more so than did YLC-3 and YLC-4. These spiro-based YLC derivatives packed densely and functioned as Lewis bases to coordinate Pb and Ni ions in the perovskite and NiO_x layers, respectively. Together, the effects of smaller grain boundaries and defect passivation of the perovskite enhanced the optoelectronic properties of the PSCs. The photoinduced charge carrier extraction in the linearly increasing voltage (photo-CELIV) curves of NiO_x/YLC-1(a) showed the faster carrier transport 3.3 × 10^-3 cm² V^-1 s^-1, which improved the carrier mobility, supporting the notion of defect passivation of the perovskite. The best-performing NiO_x/YLC-1(a) device provided a short-circuit current density (J_SC) of 22.88 mA cm^-2, an open-circuit voltage (V_OC) of 1.10 V, and a fill factor (FF) of 80.93%, corresponding to an overall PCE of 20.37%. In addition, the PCEs of the NiO_x/YLC-1(a) and NiO_x/YLC-4(b) PSC devices underwent decays of only 98.1 and 97.0% of their original values after 41 days under an Ar atmosphere. Thus, these YLC derivatives passivated the NiO_x surface and optimized the film quality of perovskites, thereby leading to superior PCEs of their respective PSCs.

Designing New Indene-Fullerene Derivatives as Electron-Transporting Materials for Flexible Perovskite Solar Cells

The synthesis and characterization of a family of indene-C₆₀ adducts obtained via Diels-Alder cycloaddition [4 + 2] are reported. The new C₆₀ derivatives include indenes with a variety of functional groups. These adducts show lowest unoccupied molecular orbital energy levels to be at the right position to consider these compounds as electron-transporting materials for planar heterojunction perovskite solar cells. Selected derivatives were applied into inverted (p-i-n configuration) perovskite device architectures, fabricated on flexible polymer substrates, with large active areas (1 cm²). The highest power conversion efficiency, reaching 13.61%, was obtained for the 6'-acetamido-1',4'-dihydro-naphtho[2',3':1,2][5,6]fullerene-C₆₀ (NHAc-ICMA). Spectroscopic characterization was applied to visualize possible passivation effects of the perovskite's surface induced by these adducts.

Dopant-Free All-Organic Small-Molecule HTMs for Perovskite Solar Cells: Concepts and Structure–Property Relationships

Since the introduction of Perovskite Solar Cells, their photovoltaic efficiencies have grown impressively, reaching over 25%. Besides the exceptional efficiencies, those solar cells need to be improved to overcome some concerns, such as their intrinsic instability when exposed to humidity. In this respect, the development of new and stable Hole Transporting Materials (HTMs) rose as a new hot topic. Since the doping agents for common HTM are hygroscopic, they bring water in contact with the perovskite layer, thus deteriorating it. In the last years, the research focused on “dopant-free” HTMs, which are inherently conductive without any addition of dopants. Dopant-free HTMs, being small molecules or polymers, have still been a relatively small set of compounds until now. This review collects almost all the relevant organic dopant-free small-molecule HTMs known so far. A general classification of HTMs is proposed, and structure analysis is used to identify structure–property relationships, to help researchers to build better-performing materials.

Side-Chain Engineering of Diketopyrrolopyrrole-Based Hole-Transport Materials to Realize High-Efficiency Perovskite Solar Cells

The design and synthesis of a stable and efficient hole-transport material (HTM) for perovskite solar cells (PSCs) are one of the most demanding research areas. At present, 2,2',7,7'-tetrakis[N,N-di(4-methoxyphenyl)amino]-9,9'-spirobifluorene (spiro-MeOTAD) is a commonly used HTM in the fabrication of high-efficiency PSCs; however, its complicated synthesis, addition of a dopant in order to realize the best efficiency, and high cost are major challenges for the further development of PSCs. Herein, various diketopyrrolopyrrole-based small molecules were synthesized with the same backbone but distinct alkyl side-chain substituents (i.e., 2-ethylhexyl-, n-hexyl-, ((methoxyethoxy)ethoxy)ethyl-, and (2-((2-methoxyethoxy)ethoxy)ethyl)acetamide, designated as D-1, D-2, D-3, and D-4, respectively) as HTMs. The variation in the alkyl chain has shown obvious effects on the optical and electrochemical properties as well as on the molecular packing and film-forming ability. Consequently, the power conversion efficiency (PCE) of the PSC under one sun illumination (100 mW cm^-2) is shown to increase in the order of D-1 (8.32%) < D-2 (11.12%) < D-3 (12.05%) < D-4 (17.64%). Various characterization techniques reveal that the superior performance of D-4 can be ascribed to the well-aligned highest occupied molecular orbital energy level with the counter electrode, the more compact π-π stacking with a higher coherence length, and the excellent hole mobility of 1.09 × 10^-3 cm² V^-1 s^-1, thus providing excellent energetics for effective charge transport with minimal charge-carrier recombination. Furthermore, the addition of the dopant Li-TFSI in D-4 is shown to deliver a remarkable PCE of 20.19%, along with a short-circuit current density (J_SC), open-circuit voltage (V_OC), and fill factor (FF) of 22.94 mA cm^-2, 1.14 V, and 73.87%, respectively, and superior stability compared to that of other HTMs. These results demonstrate the effectiveness of side-chain engineering for tailoring the properties of HTMs, thus offering new design tactics to fabricate for the synthesis of highly efficient and stable HTMs for PSCs.

Spherical Hole-Transporting Interfacial Layer Passivated Defect for Inverted NiOx-Based Planar Perovskite Solar Cells with High Efficiency of over 20

In this study, we achieved a facile and low-cost (18-22 USD/g) synthesis of spiro[fluorene-9,9-phenanthren-10-one]-based interfacial layer materials (MSs; designated MS-PC, MS-PA, MS-OC, and MS-OA). Carbazoles and dimethylacridine substituents with an extended π-conjugation achieved through ortho- or para-orientations were used as donors at the spiro[fluorene-9,9'-phenanthren-10'-one] moiety. Highly efficient and stable inverted perovskite solar cells (PSCs) with the device architecture of ITO/NiO_x/MSs/perovskite/PC₆₁BM/BCP/Ag can be achieved to improve the surface morphology of NiO_x when MSs are adopted as the interfacial layer. During a morphological study, the ortho-orientated donor of MS-OC and MS-OA has spherical structures indicated that the films were smooth and that the films of perovskite deposited on them had large grain size and uniformity. The photoluminescence properties of the perovskite layers on the NiO_x/MSs were showed better hole-transporting capabilities than the bare NiO_x. The dual-functional interfacial layer has shown defect passivation effect, it not only improved the surface morphology of NiO_x but also enlarged the perovskite layer grain size. The best PSC device performance of the NiO_x/MS-OC was characterized by 22.34 mA cm^-2 short-circuit current density (J_sc), 1.128 V open-circuit voltage (V_oc), and 80.8% fill factor (FF), resulting in 20.34% power conversion efficiency (PCE). The NiO_x/MS-OC PSCs showed good long-term device stability, even retained the original PCE of 93.16% after 370 days under argon (25 °C). Owing to the superior perovskite morphologies of the NiO_x/MSs, the resulting devices outperformed the bare NiO_x-based PSCs.

Enhancing the Stability of Orthorhombic CsSnI3 Perovskite via Oriented π-Conjugated Ligand Passivation

Lead-free orthorhombic CsSnI₃ (Bγ-CsSnI₃) perovskite has been emerging as one of the potential candidates of photovoltaic materials with superior performance. However, the instability induced by rapid reconstructive phase transition and the oxidation of Sn²⁺ greatly limits their future application. We thus reported a strategy, oriented π-conjugated ligand passivation, for enhancing the stability of Bγ-CsSnI₃, simulated using a Bγ-CsSnI₃ slab model based on the first-principles computation. The phase stability was found to be strongly dependent on the orientations of phenylethylammonium (PEA⁺) ligands. The passivated Bγ-CsSnI₃ slab with the ligand molecule axis along [414] was demonstrated as the most stable with the lowest adsorption energy (E_ads). Based on this configuration, the calculated formation energies (E_form) of half- and full-monolayer coverage were even more negative than that of yellow phase (Y-) CsSnI₃ passivated by PEA⁺ ligands, verifying the enhanced phase stability. Furthermore, the surface states could be effectively suppressed and the downshifted conduction band minimum (CBM) resulted in a reduced band gap for the completely capped Bγ-CsSnI₃. Moreover, the CBM and the valence band maximum (VBM) of the system with complete coverage were respectively donated by the surface and bulky components of the slab, which might benefit the separation and transfer of photogenerated carriers.

A Comparison of the Structure and Properties of Opaque and Semi-Transparent NIP/PIN-Type Scalable Perovskite Solar Cells

For over a decade, single-junction perovskite solar cells (PSCs) have experienced an unprecedent increase in efficiencies and even offer opportunities to surpass the Shockley–Queisser limit in multijunction configuration. There is consequently an intense need for easily processable semi-transparent PSCs as a basis of affordable tandems. The current study reports the comparison of negative-intrinsic-positive (NIP) and positive-intrinsic-negative (PIN) architectures based on CH3NH3PbI3{Cl}-based perovskite. Both devices could be prepared with the same N-type (SnO2 nanoparticles) and P-type (poly-triarylamine (PTAA) polymer) materials. Each layer (except for electrodes) was deposited using solvent-based low temperature processes, contrasting with other literature studies, especially SnO2 for PIN-type purposes. A thorough experimental comparison of the two architectures reveals rather similar optical and structural properties for perovskites, whether deposited on an N- or P-type underlayer, with also comparable efficiencies in the final devices. A compatible deposition process for sputtered indium tin oxide (ITO) as a semi-transparent electrode was then performed for both architectures. Upon varying the illuminated devices’ side, the semi-transparent cells exhibited different photocurrent behaviors, the magnitude of which depended on the device’s architecture. In conclusion, despite slightly better efficiencies for the semi-transparent NIP-type devices, the semi-transparent PIN-type counterparts also appear to be optically attractive for (two-terminal) tandem applications.

Lewis-base containing spiro type hole transporting materials for high-performance perovskite solar cells with efficiency approaching 20

Owing to excellent performance and dopability, spiro-OMeTAD remains an irreplaceable hole transporting material (HTM) in perovskite solar cells (PSCs). In order to further improve the performance of spiro-OMeTAD based PSCs, a Lewis base can be introduced into the structure of spiro-OMeTAD wisely, which can keep the advantages of spiro-OMeTAD while incorporating the functionality of a Lewis base in passivating the surface of the perovskite. Therefore, spiro-type HTMs (spiro-CN-OMeTAD with a dicyano group and spiro-PS-OMeTAD with a thiocarbonyl group) were synthesized and confirmed by density functional theory (DFT) calculations and X-ray single-crystallographic diffraction. Spiro-CN-OMeTAD as an HTM is certified to have a suitable interfacial band alignment with the perovskite, good film quality and effective defect passivation, which facilitate the resulting device to achieve an efficiency of 19.90% with a high open-circuit voltage, low hysteresis, and improved stability. This study provides an alternative strategy for the molecular design of better HTMs in high-performance PSCs.