Following in Situ the Deposition of Gold Electrodes on Low Band Gap Polymer Films

Physical Properties of an Ultrathin Al2O3/HfO2 Composite Film by Atomic Layer Deposition and the Application in Thin-Film Transistors

A high-quality ultrathin dielectric film is important in the field of microelectronics. We designed a composite structure composed of Al₂O₃/HfO₂ with different Al₂O₃/HfO₂ cycles prepared by atomic layer deposition (ALD) to obtain high-quality ultrathin (1-12 nm) dielectric films. Al₂O₃ protected HfO₂ from interacting with the Si substrate and inhibited the crystallization of the HfO₂ film. High permittivity material of HfO₂ was adopted to guarantee the good insulating property of the composite film. We investigated the physical properties as well as the growth mode of the composite film and found that the film exhibited a layer growth mode. The water contact angle and grazing-incidence small-angle X-ray scattering analyses revealed that the film was formed physically at 3 nm, while the thickness of the electrically stable film was 10 nm from grazing-incidence wide-angle X-ray scattering and dielectric constant analyses. The composite film was applied as a dielectric layer in thin-film transistors (TFTs). The threshold voltage was decreased to 0.27 V compared to the organic field-effect transistor with the single HfO₂ dielectric, and the subthreshold swing was as small as 0.05 V/dec with a carrier mobility of 49.2 cm²/V s. The off-current was as low as 10^-11 A, and the on/off ratio was as high as 5.5 × 10⁶. This ALD-prepared composite strategy provides a simple and practical way to obtain the high-quality dielectric film, which shows the potential application in the field of microelectronics.

High-Performance Organic Electrochemical Transistor Based on Photo-annealed Plasmonic Gold Nanoparticle-Doped PEDOT:PSS

Organic electrochemical transistors (OECTs), particularly the ones based on PEDOT:PSS, are excellent candidates for chemical and biological sensing because of their unique advantages. Improving the sensitivity and stability of OECTs is crucially important for practical applications. Herein, the transconductance of OECT is improved by 8-fold to 14.9 mS by doping the PEDOT:PSS channel with plasmonic gold nanoparticles (AuNPs) using a solution-based process followed by photo annealing. In addition, the OECT also possesses high flexibility and cyclic stability. It is revealed that the doping of AuNPs increases the conductivity of PEDOT:PSS and the photo annealing improves the crystallinity of the PEDOT:PSS channel and the interaction between AuNPs and PEDOT:PSS. These changes lead to the increase in transconductance and cyclic stability. The prepared OECTs are also demonstrated to be effective in sensitive detection of glucose within a wide concentration range of 10 nM-1 mM. Our OECTs based on photo-annealed plasmonic AuNP-doped PEDOT:PSS may find great applications in chemical and biological sensing, and this strategy may be extended to prepare many other high-performance OECT-based devices.

Universal electrode for ambipolar charge injection in organic electronic devices

Ambipolar transistors, i.e. transistors with symmetrical n- and p-type performances, open new avenues for the design and integration of high-density, efficient and versatile circuits for advanced technologies. Their performance requires two processes: efficient injection of holes and electrons from the metal electrodes into the semiconductor; and transport of both carriers through the semiconductor. Organic semiconductors (OSCs) support ambipolar transport, but charge injection is strongly asymmetric due to inherent misalignment of the electrode work function with both conducting levels of the OSC. Here we introduce a new electrode concept capable of efficiently injecting both types of charge carriers into OSCs. The electrode has a mosaic-like structure composed of islands of two metals with high and low work functions, in this case Al and Au, respectively. Under suitable applied bias the Au (Al) domains in direct contact with the OSC allow efficient hole (electron) injection into the HOMO (LUMO) level. Implementing this electrode as both the source and drain in an organic field effect transistor (OFET) led to fully balanced ambipolar performance while maintaining high ON/OFF ratios. We then used the ambipolar OFETs to significantly simplify the circuit design and fabricate digital and analogue elements, i.e. a digital inverter and an analogue phase shifter using one type of transistor only. Finally, we demonstrate that a single ambipolar OFET can replace several unipolar transistors to fabricate digital transmission gate circuits. The new electrode design concept can include other metal combinations and compositions to balance ambipolar injection, and the use of the mosaic electrodes can be extended to other electronic devices that require ambipolar charge injection such as light emitting transistors, memory devices etc.

State of the art of ultra-thin gold layers: formation fundamentals and applications

Fabrication of ultra-thin gold (Au) layers (UTGLs) has been regarded as the key technique to achieve applications with tunable optical response, flexible sensors and electronic devices. Various strategies have been developed to optimize the wetting process of Au, resulting in the formation of UTGLs at a minimum thickness. The related studies on UTGLs attracted huge attention in recent years. On the one hand, the growth processes of UTGLs on different substrates were in-depth probed by advanced in situ characterization techniques and the effects of optimization strategies on the growth of UTGLs were also revealed. On the other hand, based on the understanding of the growth behavior and the assistance of optimization strategies, various applications of UTGLs were realized based on optical/plasmon responses, surface-enhanced Raman scattering and as electrodes for various sensors and electronic devices, as well as being seed layers for thin film growth. In this focused review, both the fundamental and practical studies on UTGLs in the most recent years are elaborated in detail. The growth processes of UTGLs revealed by in situ characterization techniques, such as grazing-incidence small-angle X-ray scattering (GISAXS), as well as the state of the art of UTGL-based applications, are reviewed.

Correlating Optical Reflectance with the Topology of Aluminum Nanocluster Layers Growing on Partially Conjugated Diblock Copolymer Templates

Large-scale fabrication of metal cluster layers for usage in sensor applications and photovoltaics is a huge challenge. Physical vapor deposition offers large-scale fabrication of metal cluster layers on templates and polymer surfaces. In the case of aluminum (Al), only little is known about the formation and interaction of Al clusters during sputter deposition. Complex polymer surface morphologies can tailor the deposited Al cluster layer. Here, a poly(methyl methacrylate)-block-poly(3-hexylthiophen-2,5-diyl) (PMMA-b-P3HT) diblock copolymer template is used to investigate the nanostructure formation of Al cluster layers on the different polymer domains and to compare it with the respective homopolymers PMMA and P3HT. The optical properties relevant for sensor applications are monitored with ultraviolet-visible (UV-vis) measurements during the sputter deposition. The formation of Al clusters is followed in situ with grazing-incidence small-angle X-ray scattering (GISAXS), and the chemical interaction is revealed by X-ray photoelectron spectroscopy (XPS). Furthermore, atomic force microscopy (AFM) and field emission scanning electron microscopy (FESEM) yield topographical information about selective wetting of Al on the P3HT domains and embedding in the PMMA domains in the early stages, followed by four distinct growth stages describing the Al nanostructure formation.

Tailoring the Optical Properties of Sputter-Deposited Gold Nanostructures on Nanostructured Titanium Dioxide Templates Based on In Situ Grazing-Incidence Small-Angle X-ray Scattering Determined Growth Laws

Gold/titanium dioxide (Au/TiO₂) nanohybrid materials have been widely applied in various fields because of their outstanding optical and photocatalytic performance. By state-of-the-art polymer templating, it is possible to make uniform nanostructured TiO₂ layers with potentially large-scale processing methods. We use customized polymer templating to achieve TiO₂ nanostructures with different morphologies. Au/TiO₂ hybrid thin films are fabricated by sputter deposition. An in-depth understanding of the Au morphology on the TiO₂ templates is achieved with in situ grazing-incidence small-angle X-ray scattering (GISAXS) during the sputter deposition. The resulting Au nanostructure is largely influenced by the TiO₂ template morphology. Based on the detailed understanding of the Au growth process, characteristic distances can be selected to achieve tailored Au nanostructures at different Au loadings. For selected sputter-deposited Au/TiO₂ hybrid thin films, the optical response with a tailored localized surface plasmon resonance is demonstrated.

In situ Grazing-Incidence Small-Angle X-ray Scattering Observation of Gold Sputter Deposition on a PbS Quantum Dot Solid

For PbS quantum dot (QD)-based optoelectronic devices, gold is the most frequently used electrode material. In most device architectures, gold is in direct contact with the QD solid. To better understand the formation of the interface between gold and a close-packed QD layer at an early stage, in situ grazing-incidence small-angle X-ray scattering is used to observe the gold sputter deposition on a 1,2-ethanedithiol (EDT)-treated PbS QD solid. In the kinetics of gold layer growth, the forming and merging of small gold clusters (radius less than 1.6 nm) are observed at the early stages. The thereby formed medium gold clusters (radius between 1.9-2.4 nm) are influenced by the QDs' templating effect. Furthermore, simulations suggest that the medium gold clusters grow preferably along the QDs' boundaries rather than as a top coating of the QDs. When the thickness of the sputtered gold layer reaches 6.25 nm, larger gold clusters with a radius of 5.3 nm form. Simultaneously, a percolation layer with a thickness of 2.5 nm is established underneath the gold clusters. This fundamental understanding of the QD-gold interface formation will help to control the implementation of sputtered gold electrodes on close-packed QD solids in device manufacturing processes.

On the Nature of Charge-Injecting Contacts in Organic Field-Effect Transistors

Organic field-effect transistors (OFETs) are key enabling devices for plastic electronics technology, which has a potentially disruptive impact on a variety of application fields, such as health, safety, and communication. Despite the tremendous advancements in understanding the OFET working mechanisms and device performance, further insights into the complex correlation between the nature of the charge-injecting contacts and the electrical characteristics of devices are still necessary. Here, an in-depth study of the metal-organic interfaces that provides a direct correlation to the performance of OFET devices is reported. The combination of synchrotron X-ray spectroscopy, atomic force microscopy, electron microscopy, and theoretical simulations on two selected electron transport organic semiconductors with tailored chemical structures allows us to gain insights into the nature of the injecting contacts. This multiple analysis repeated at the different stages of contact formation provides a clear picture on the synergy between organic/metal interactions, interfacial morphology, and structural organization of the electrode. The simultaneous synchrotron X-ray experiments and electrical measurements of OFETs in operando uncovers how the nature of the charge-injecting contacts has a direct impact on the injection potential of OFETs.