Lateral Photodetectors Based on Double-Cable Polymer/Two-Dimensional Perovskite Heterojunction

Recent progress in emerging two-dimensional organic-inorganic van der Waals heterojunctions

Two-dimensional (2D) materials have attracted significant attention in recent decades due to their exceptional optoelectronic properties. Among them, to meet the growing demand for multifunctional applications, 2D organic-inorganic van der Waals (vdW) heterojunctions have become increasingly popular in the development of optoelectronic devices. These heterojunctions demonstrate impressive capability to synergistically combine the favourable characteristics of organic and inorganic materials, thereby offering a wide range of advantages. Also, they enable the creation of innovative device structures and introduce novel functionalities in existing 2D materials, avoiding the need for lattice matching in different material systems. Presently, researchers are actively working on improving the performance of devices based on 2D organic-inorganic vdW heterojunctions by focusing on enhancing the quality of 2D materials, precise stacking methods, energy band regulation, and material selection. Therefore, this review presents a thorough examination of the emerging 2D organic-inorganic vdW heterojunctions, including their classification, fabrication, and corresponding devices. Additionally, this review offers profound and comprehensive insight into the challenges in this field to inspire future research directions. It is expected to propel researchers to harness the extraordinary capabilities of 2D organic-inorganic vdW heterojunctions for a wider range of applications by further advancing the understanding of their fundamental properties, expanding the range of available materials, and exploring novel device architectures. The ongoing research and development in this field hold potential to unlock captivating advancements and foster practical applications across diverse industries.

Performance and stability enhancement of perovskite photodetectors by additive and interface engineering using a dual-functional PPS zwitterion

Hybrid organic-inorganic metal halide perovskites (HOIPs) have gained significant research interest due to their tunable optoelectronic properties and ease of fabrication. Enhancing the stability and efficiency of perovskite materials can be achieved through the passivation of defective surfaces and the improvement of interfacial properties. In this study, we introduce a zwitterionic compound, PPS (3-(1-pyridinio)-1-propanesulfonate), as a bifunctional material that serves as an additive and an interlayer. Incorporating PPS into the perovskite film effectively reduces both positively and negatively charged defects, leading to improved surface morphology and a reduction in undesired charge carrier recombination. Additionally, the formation of a PPS interlayer on SnO2 improves the SnO2/perovskite interfacial characteristics, thereby enhancing charge carrier extraction. As a result, the photodetector exhibits a low dark current of 6.05 × 10-11 A, an excellent responsivity of 5.93 A W-1, a detectivity of 1.51 × 1013 J, and an on/off ratio of 1.2 × 104 under open-air conditions. Moreover, the device demonstrates outstanding stability, retaining 80% of its original responsivity in an ambient environment. This work highlights the great potential of dual-functional materials for defect passivation in future optoelectronic devices, emphasizing the importance of surface modification and interface engineering for improved performance and stability.

2D Ruddlesden-Popper Polycrystalline PerovskitePyro-Phototronic Photodetectors

Two-dimensional (2D) Ruddlesden-Popper (RP) layered halide perovskite has attracted wide attentions due to its unique structure and excellent optoelectronic properties. With inserting organic cations, inorganic octahedrons are forced to extend in a certain direction, resulting in an asymmetric 2D perovskite crystal structure and causing spontaneous polarization. The pyroelectric effect resulted from spontaneous polarization exhibits a broad prospect in the application of optoelectronic devices. Herein, 2D RP polycrystalline perovskite (BA)2 (MA)3 Pb4 I13 film with excellent crystal orientation is fabricated by hot-casting deposition, and a class of 2D hybrid perovskite photodetectors (PDs) with pyro-phototronic effect is proposed, achieving temperature and light detection with greatly improved performance by coupling multiple energies. Because of the pyro-phototronic effect, the current is ≈35 times to that of the photovoltaic effect current under 0 V bias. The responsivity and detectivity are 12.7 mA W-1 and 1.73 × 1011 Jones, and the on/off ratio can reach 3.97 × 103 . Furthermore, the influences of bias voltage, light power density, and frequency on the pyro-phototronic effect of 2D RP polycrystalline perovskite PDs are explored. The coupling of spontaneous polarization and light facilitates photo-induced carrier dissociation and tunes the carrier transport process, making 2D RP perovskites a competitive candidate for next-generation photonic devices.

Highly Responsive Mid-Infrared Metamaterial Enhanced Heterostructure Photodetector Formed out of Sintered PbSe/PbS Colloidal Quantum Dots

Efficient and simple-to-fabricate light detectors in the mid infrared (MIR) spectral range are of great importance for various applications in existing and emerging technologies. Here, we demonstrate compact and efficient photodetectors operating at room temperature in a wavelength range of 2710-4250 nm with responsivities as high as 375 and 4 A/W. Key to the high performance is the combination of a sintered colloidal quantum dot (CQD) lead selenide (PbSe) and lead sulfide (PbS) heterojunction photoconductor with a metallic metasurface perfect absorber. The combination of this photoconductor stack with the metallic metasurface perfect absorber provides an overall ∼20-fold increase of the responsivity compared against reference sintered PbSe photoconductors. More precisely, the introduction of a PbSe/PbS heterojunction increases the responsivity by a factor of ∼2 and the metallic metasurface enhances the responsivity by an order of magnitude. The metasurface not only enhances the light-matter interaction but also acts as an electrode to the detector. Furthermore, fabrication of our devices relies on simple and inexpensive methods. This is in contrast to most of the currently available (state-of-the-art) MIR photodetectors that rely on rather expensive as well as nontrivial fabrication technologies that often require cooling for efficient operation.

Go beyond the limit: Rationally designed mixed-dimensional perovskite/semiconductor heterostructures and their applications

Halide perovskite heterojunctions rationally integrate the chemical and physical properties of multi-dimensional perovskites and judiciously chosen semiconductor materials, offering the promise of going beyond the limit of a single component. This emerging platform of materials innovation offers fresh opportunities to tune material properties, discover interesting phenomena, and enable novel applications. In this review, we first discuss the fundamentals of forming heterojunctions with perovskites and a wide range of semiconductors, and then we give an overview of the research progress of halide perovskite heterojunctions in terms of their optical, electrical, and mechanical properties, focusing on how the heterojunction tunes the energy band structure, electrical transport, and charge recombination behaviors. We further outline the progress of perovskite-based heterojunctions in optoelectronics. Finally, the challenges and future research directions for perovskite/semiconductor heterojunctions are discussed.

High-Performance All-Polymer Photodetectors Enabled by New Random Terpolymer Acceptor with Fine-Tuned Molecular Weight

Reducing the dark current density and enhancing the overall performance of the device is the focal point in research for organic photodetectors. Two novel random terpolymers (P3 and P4) with different molecular weights are synthesized and evaluated as acceptors in bulk heterojunction (BHJ) polymer photodetectors. Compared with known acceptor materials, such as N2200 (P1) and F-N2200 (P2), polymer P4 has a lower lowest unoccupied molecular orbital (LUMO) energy level, favorable morphology, and good miscibility with a donor material J71, which leads to proper phase separation of the blend film and better dissociation of excitons and transport of carriers. Therefore, a considerably low dark current density (Jd) of 1.9 × 10-10 A/cm2 and a high specific detectivity (D*) of 1.8 × 1013 cm Hz1/2/W (also "Jones") at 580 nm under a -0.1 V bias are realized for the P4-based photodetector. More importantly, the device also exhibits a fast response speed (τr/τf = 1.24/1.87 μs) and a wide linear dynamic range (LDR) of 109.2 dB. This work demonstrates that high-performance all-polymer photodetectors with ideal morphology can be realized by random polymer acceptors with a fine-tuned molecular weight.

Low Dark Current and Performance Enhanced Perovskite Photodetector by Graphene Oxide as an Interfacial Layer

Organic-inorganic hybrid perovskite photodetectors are gaining much interest recently for their high performance in photodetection, due to excellent light absorption, low cost, and ease of fabrication. Lower defect density and large grain size are always favorable for efficient and stable devices. Herein, we applied the interface engineering technique for hybrid trilayer (TiO2/graphene oxide/perovskite) photodetector to attain better crystallinity and defect passivation. The graphene oxide (GO) sandwich layer has been introduced in the perovskite photodetector for improved crystallization, better charge extraction, low dark current, and enhanced carrier lifetime. Moreover, the trilayer photodetector exhibits improved device performance with a high on/off ratio of 1.3 × 104, high responsivity of 3.38 AW-1, and low dark current of 1.55 × 10-11 A. The insertion of the GO layer also suppressed the perovskite degradation process and consequently improved the device stability. The current study focuses on the significance of interface engineering to boost device performance by improving interfacial defect passivation and better carrier transport.

Two-Dimensional Hybrid Perovskite-Based van der Waals Heterostructures

Two-dimensional (2D) hybrid perovskites, as newly emerging materials, have become the center of attention in optoelectronic fields within a few years because of their unique optoelectronic properties, including tunable bandgap, long carrier diffusion length, and high absorption coefficient. 2D perovskite-based van der Waals heterostructures via integration of 2D perovskites with other layered materials provide new platforms for many optoelectronic devices with prominent performance, such as photodetectors, light-emitting diodes (LEDs), and phototransistors. In this Perspective, the unique properties of 2D perovskites will be first introduced to explore why this material is attractive and popular. Subsequently, various types of heterostructures based on 2D perovskites will be illustrated, including the heterostructure construction approaches as well as their optical and optoelectronic applications. Finally, potential research directions based on 2D perovskite heterostructures are also proposed.

Property Modulation of Two-Dimensional Lead-Free Perovskite Thin Films by Aromatic Polymer Additives for Performance Enhancement of Field-Effect Transistors

The inevitable oxidation of Sn²⁺ and p-type self-doping has plagued the development of two-dimensional (2D) Sn-based perovskite field effect transistors. In this work, we demonstrate the modulation of the properties of phenethylammonium tin iodide ((PEA)₂SnI₄) perovskite thin films by introducing the aromatic polymer additives of poly(4-vinylphenol) (PVP) and poly(vinyl pyrrolidone) (PVPD) during the crystallization processes, keeping the 2D layered structure of (PEA)₂SnI₄ unchanged. The proposed formation mechanisms of the polymer-assisted (PEA)₂SnI₄:PVP and (PEA)₂SnI₄:PVPD films disclose that the interactions between the polymers and (PEA)₂SnI₄, such as hydrogen bonds, π-π interactions, and coordination bonds, lead to the improvement of the morphology and crystallization as well as the inhibition of Sn²⁺ oxidation of the films. However, the field-effect transistors based on the two polymer-assisted (PEA)₂SnI₄ thin films constructed on the dielectric of poly(vinyl alcohol) (PVA) modified by crosslinking PVP (CL-PVP) exhibit quite a different performance. Compared with the (PEA)₂SnI₄ transistor, without sacrificing the hole mobility, the on-off current ratio of the (PEA)₂SnI₄:PVP device increases by one order of magnitude, and the subthreshold slope declines slightly due to the reduced leakage current, which results from the reduction of p-type self-doping of the perovskite film and the improved quality of the perovskite/dielectric interface because of the strong π-π interactions between the benzene rings in CL-PVP and (PEA)₂SnI₄:PVP. In contrast, the (PEA)₂SnI₄:PVPD transistor exhibits relatively poor overall performance because of the N-vinylpyrrolidone of PVPD. More importantly, employing PVP and PVPD as additives can effectively enhance the chemical stability of (PEA)₂SnI₄ as well as the operational stabilities of the corresponding transistors. Our work provides an effective strategy for selecting chemical additives to improve 2D perovskite properties and suppress the oxidation of Sn-based perovskites, and paves a way toward the future applications of Sn-based perovskite optoelectronic devices with high performance and stability.