Ultrahigh Sensitivity Graphene/Nanoporous GaN Ultraviolet Photodetectors

Recent progress in ultraviolet photodetectors based on low-dimensional materials

Ultraviolet (UV) photodetectors (PDs) are crucial for various advanced applications, yet conventional technologies suffer from limitations like low sensitivity, slow response, and high costs. Low-dimensional materials (LDMs) have emerged as a promising alternative due to their unique optoelectronic properties, including quantum confinement, tunable bandgaps, and high carrier mobility. While existing reviews on UV-PDs often focus narrowly on specific materials or structures, this review offers a comprehensive overview of LDM-based UV-PDs, covering 0D, 1D, and 2D materials and their heterostructures. We highlight recent advances that enhance UV-PD performance across the full UV spectrum, addressing challenges such as limited spectral range and high dark current. The review also explores diverse applications, from medicine to space science, demonstrating the growing impact of LDM-based UV-PDs. By focusing on the latest developments and addressing research gaps, this review provides essential insights into the future of UV photodetection.

Multifunctional UV photodetect-memristors based on area selective fabricated Ga2S3/graphene/GaN van der Waals heterojunctions

Multifunctional devices based on van der Waals heterojunctions have drawn significant attention owing to their portable size, low power consumption and various application scenarios. However, high fabrication equipment requirements, complex device structures and limited operating conditions hinder their potential value. Herein, multifunctional UV photodetect-memristors based on Ga2S3/graphene/GaN van der Waals heterojunctions via area selective deposition have been proposed for the first time. The Ga2S3/graphene/GaN heterojunctions are firstly grown via area selective deposition (ASD) without a mask plate or lithography process. And the corresponding molecular dynamics (MD) and density functional theory (DFT) simulation further confirmed its feasibility and physical properties. Subsequently, multifunctional devices based on Ga2S3/graphene/GaN heterojunctions are fabricated accordingly, and exhibit ultrafast (<80 μs) response at 0 V and stable, highly sensitive (1150.4 A W-1) memory features at 3 V. Here, the huge hole barriers formed on the two edges of graphene set the foundation of trapping and detecting light-induced carriers. Afterwards, handwriting numeral recognition tasks are carried out based on the performance extracted from the device and a simplified noise filtering and improved recognition accuracy system is proposed, confirming its application potential in the artificial intelligence area. This study proposes a practical way to grow large-size 2D materials selectively, shows the valuable application potential of p-g-n heterojunctions in various application fields, and expands an innovative path of device development in the post-Moorish era.

High current density heterojunction bipolar transistors with 3D-GaN/2D-WSe2 as emitter junctions

With the continuous advancement of electronic technology, there is an increasing demand for high-speed, high-frequency, and high-power devices. Due to the inherently small thickness and absence of dangling bonds of two-dimensional (2D) materials, heterojunction bipolar transistors (HBTs) based on 2D layered materials (2DLMs) have attracted significant attention. However, the low current density and limited structural design flexibility of 2DLM-based HBT devices currently hinder their applications. In this work, we present a novel vertical GaN/WSe2/MoS2 HBT with three-dimensional (3D)-GaN/2D-WSe2 as the emitter junction. Harnessing the high carrier concentration and wide bandgap of 3D-GaN, an HBT with a current density of about 260 A cm-2 is obtained. In addition, by selecting an adequate position for the collector electrode, we achieve efficient carrier collection through a collector junction smaller than the emitter junction area, obtaining a common-base current gain of 0.996 and a remarkable common-emitter current gain (β) of 12.4.

High-Performance Ultraviolet Photodetector Based on the Vertical GaSe/GaN Heterojunction

Ultraviolet light detection is essential for environmental monitoring, hazard alerting, and optical communication. Here, a vertical UV photodetector is proposed and demonstrated by stacking the freestanding GaN-film on the 2D GaSe flake. Benefits from the vertical heterostructure and built-in electric field, the photodetector exhibits excellent photoresponse properties, including a high responsivity of 1.38 × 105 A/W and a high specific detectivity of 1.40 × 1016 Jones under 362 nm wavelength illumination. Additionally, the device demonstrates fast rise and decay time of 18.0 and 21.8 µs, respectively. This work paves the way for design and realization of the high-performance GaN-based photodetectors.

Regulated Charge Transfer in Donor-Acceptor Metal-Organic Frameworks for Highly-Sensitive Photodetectors

In photo-induced charge separation, organic thin films with donor and acceptor chromophores are vital for uses such as artificial photosynthesis and photodetection. The main challenges include optimizing charge separation efficiency and identifying the ideal acceptor/donor ratio. Achieving this is difficult due to the variability in molecular configurations within these typically amorphous organic aggregates. Metal-organic frameworks (MOFs) provide a structured solution by enabling systematic design of donor/acceptor blends with adjustable ratios within a crystalline lattice. We demonstrate this approach by incorporating donor and acceptor naphthalenediimide (NDI) chromophores as linkers in a highly oriented, monolithic MOF thin film. By adjusting the NDI acceptor linker concentration during the layer-by-layer assembly of surface-anchored MOF thin films (SURMOFs), we significantly enhanced charge separation efficiency. Surprisingly, the optimum acceptor concentration was only 3 %, achieving a forty-fold increase in photodetection efficiency compared to baseline NDI donor-based SURMOFs. This unexpected behaviour was clarified through theoretical analysis enabled by the well-defined crystalline structure of the SURMOFs. Using density functional theory and kinetic Monte Carlo simulations, we identified two opposing effects from acceptors: the positive effect of suppressing undesirable charge carrier recombination is offset at high concentrations by a reduction in charge-carrier mobility.

In Situ Growth of Wafer-Scale Patterned Graphene and Fabrication of Optoelectronic Artificial Synaptic Device Array Based on Graphene/n-AlGaN Heterojunction for Visual Learning

The unique optical and electrical properties of graphene-based heterojunctions make them significant for artificial synaptic devices, promoting the advancement of biomimetic vision systems. However, mass production and integration of device arrays are necessary for visual imaging, which is still challenging due to the difficulty in direct growth of wafer-scale graphene patterns. Here, a novel strategy is proposed using photosensitive polymer as a solid carbon source for in situ growth of patterned graphene on diverse substrates. The growth mechanism during high-temperature annealing is elucidated, leading to wafer-scale graphene patterns with exceptional uniformity, ideal crystalline quality, and precise control over layer number by eliminating the release of volatile from oxygen-containing resin. The growth strategy enables the fabrication of two-inch optoelectronic artificial synaptic device array based on graphene/n-AlGaN heterojunction, which emulates key functionalities of biological synapses, including short-term plasticity, long-term plasticity, and spike-rate-dependent plasticity. Moreover, the mimicry of visual learning in the human brain is attributed to the regulation of excitatory and inhibitory post-synapse currents, following a learning rule that prioritizes initial recognition before memory formation. The duration of long-term memory reaches 10 min. The in situ growth strategy for patterned graphene represents the novelty for fabricating fundamental hardware of an artificial neuromorphic system.

A parylene/graphene UV photodetector with ultrahigh responsivity and long term stability

Long term stability, high responsivity, and fast response speed are essential for the commercialization of graphene photodetectors (GPDs). In this work, a parylene/graphene UV photodetector with long term stability, ultrahigh responsivity and fast response speed, is demonstrated. Parylene as a stable physical and chemical insulating layer reduces the environmental sensitivity of graphene, and enhances the performances of GPDs. In addition, utilizing bilayer electrodes reduces the buckling and damage of graphene after transferring. The parylene/graphene UV photodetector exhibits an ultrahigh responsivity of 5.82 × 105AW-1under 325 nm light irradiation at 1 V bias. Additionally, it shows a fast response speed with a rise time of 80μs and a fall time of 17μs, and a long term stability at 405 nm wavelength which is absent in the device without parylene. The parylene/graphene UV photodetector possesses superior performances. This paves the way for the commercial application of the high-performance graphene hybrid photodetectors, and provides a practical method for maintaining the long term stability of two dimensional (2D) materials.

Numerical Evaluation of the Elastic Moduli of AlN and GaN Nanosheets

Two-dimensional (2D) nanostructures of aluminum nitride (AlN) and gallium nitride (GaN), called nanosheets, have a graphene-like atomic arrangement and represent novel materials with important upcoming applications in the fields of flexible electronics, optoelectronics, and strain engineering, among others. Knowledge of their mechanical behavior is key to the correct design and enhanced functioning of advanced 2D devices and systems based on aluminum nitride and gallium nitride nanosheets. With this background, the surface Young's and shear moduli of AlN and GaN nanosheets over a wide range of aspect ratios were assessed using the nanoscale continuum model (NCM), also known as the molecular structural mechanics (MSM) approach. The NCM/MSM approach uses elastic beam elements to represent interatomic bonds and allows the elastic moduli of nanosheets to be evaluated in a simple way. The surface Young's and shear moduli calculated in the current study contribute to building a reference for the evaluation of the elastic moduli of AlN and GaN nanosheets using the theoretical method. The results show that an analytical methodology can be used to assess the Young's and shear moduli of aluminum nitride and gallium nitride nanosheets without the need for numerical simulation. An exploratory study was performed to adjust the input parameters of the numerical simulation, which led to good agreement with the results of elastic moduli available in the literature. The limitations of this method are also discussed.

High-Sensitivity and Fast-Speed UV Photodetectors Based on Asymmetric Nanoporous-GaN/Graphene Vertical Junction

GaN-based photodetectors are strongly desirable in many advanced fields, such as space communication, environmental monitoring, etc. However, the slow photo-response speed in currently reported high-sensitivity GaN-based photodetectors still hinders their applications. Here, we demonstrate a high-sensitivity and fast-speed UV photodetector based on asymmetric Au/nanoporous-GaN/graphene vertical junctions. The nanoporous GaN-based vertical photodetector shows an excellent rectification ratio up to ∼10⁵ at +4 V/-4 V. The photo-responsivity and specific detectivity of the device is up to 1.01 × 10⁴ A/W and 7.84 × 10¹⁴ Jones, respectively, more than three orders of magnitude higher than the control planar photodetector. With switching light on and off, the repeatable on/off current ratio of the nanoporous GaN-based vertical photodetector is ∼4.32 × 10³, which is about 1.51 × 10³ times to that of the control planar device. The measured rise/decay time is 12.2 μs/14.6 μs, which is the fastest value for the high-sensitivity GaN-based photodetectors to date. These results suggest that the asymmetric Au/nanoporous-GaN/graphene structure can improve the sensitivity and the photo-response speed of GaN-based PDs simultaneously.

A high responsivity, high detectivity, and high response speed MSM UVB photodetector based on SnO2 microwires

We report a high performance UVB photodetector with a metal-semiconductor-metal device structure based on high crystal quality SnO₂ microwires prepared by chemical vapor deposition. Under 10 V bias, a low dark current of 3.69 × 10^-9 A and a high light-to-dark current ratio of 1630 were achieved. The device showed a high responsivity of about 1353.0 A·W^-1 under 322 nm light illumination. The detectivity of the device is as high as 5.4 × 10¹⁴ Jones, which ensures the detection of weak signals in the UVB spectral region. Due to the small amount of deep-level defect-induced carrier recombination, the light response rise time and fall time are shorter than 0.08 s.

Transparent dual-band ultraviolet photodetector based on graphene/p-GaN/AlGaN heterojunction

Versatile applications have driven a desire for dual-band detection that enables seeing objects in multiple wavebands through a single photodetector. In this paper, a concept of using graphene/p-GaN Schottky heterojunction on top of a regular AlGaN-based p-i-n mesa photodiode is reported for achieving solar-/visible-blind dual-band (275 nm and 365 nm) ultraviolet photodetector with high performance. The highly transparent graphene in the front side and the polished sapphire substrate at the back side allows both top illumination and back illumination for the dual band detection. A system limit dark current of 1×10^-9 A/cm² at a negative bias voltage up to -10 V has been achieved, while the maximum detectivity obtained from the detection wavebands of interests at 275 nm and 365 nm are ∼ 9.0 ×10¹² cm·Hz^1/2/W at -7.5 V and ∼8.0 × 10¹¹ cm·Hz^1/2/W at +10 V, respectively. Interestingly, this new type of photodetector is dual-functional, capable of working as either photodiode or photoconductor, when switched by simply adjusting the regimes of bias voltage applied on the devices. By selecting proper bias, the device operation mode would switch between a high-speed photodiode and a high-gain photoconductor. The device exhibits a minimum rise time of ∼210 µs when working as a photodiode and a maximum responsivity of 300 A/W at 6 μW/cm² when working as a photoconductor. This dual band and multi-functional design would greatly extend the utility of detectors based on nitrides.

Progress of GaN-Based Optoelectronic Devices Integrated with Optical Resonances

Being direct wide bandgap, III-nitride (III-N) semiconductors have many applications in optoelectronics, including light-emitting diodes, lasers, detectors, photocatalysis, etc. Incorporation of III-N semiconductors with high-efficiency optical resonances including surface plasmons, distributed Bragg reflectors and micro cavities, has attracted considerable interests for upgrading their performance, which can not only reveal the new coupling mechanisms between optical resonances and quasiparticles, but also unveil the shield of novel optoelectronic devices with superior performances. In this review, the content covers the recent progress of GaN-based optoelectronic devices integrated with plasmonics and/or micro resonators, including the LEDs, photodetectors, solar cells, and light photocatalysis. The authors aim to provide an inspiring insight of recent remarkable progress and breakthroughs, as well as a promising prospect for the future highly-integrated, high speed, and efficient GaN-based optoelectronic devices.

Advances in Self-Powered Ultraviolet Photodetectors Based on P-N Heterojunction Low-Dimensional Nanostructures

Self-powered ultraviolet (UV) photodetectors have attracted considerable attention in recent years because of their vast applications in the military and civil fields. Among them, self-powered UV photodetectors based on p-n heterojunction low-dimensional nanostructures are a very attractive research field due to combining the advantages of low-dimensional semiconductor nanostructures (such as large specific surface area, excellent carrier transmission channel, and larger photoconductive gain) with the feature of working independently without an external power source. In this review, a selection of recent developments focused on improving the performance of self-powered UV photodetectors based on p-n heterojunction low-dimensional nanostructures from different aspects are summarized. It is expected that more novel, dexterous, and intelligent photodetectors will be developed as soon as possible on the basis of these works.

Recent progress of heterostructures based on two dimensional materials and wide bandgap semiconductors

Recent progress in the synthesis and assembly of two-dimensional (2D) materials has laid the foundation for various applications of atomically thin layer films. These 2D materials possess rich and diverse properties such as layer-dependent band gaps, interesting spin degrees of freedom, and variable crystal structures. They exhibit broad application prospects in micro-nano devices. In the meantime, the wide bandgap semiconductors (WBS) with an elevated breakdown voltage, high mobility, and high thermal conductivity have shown important applications in high-frequency microwave devices, high-temperature and high-power electronic devices. Beyond the study on single 2D materials or WBS materials, the multi-functional 2D/WBS heterostructures can promote the carrier transport at the interface, potentially providing novel physical phenomena and applications, and improving the performance of electronic and optoelectronic devices. In this review, we overview the advantages of the heterostructures of 2D materials and WBS materials, and introduce the construction methods of 2D/WBS heterostructures. Then, we present the diversity and recent progress in the applications of 2D/WBS heterostructures, including photodetectors, photocatalysis, sensors, and energy related devices. Finally, we put forward the current challenges of 2D/WBS heterostructures and propose the promising research directions in the future.

High-speed graphene/InGaN heterojunction photodetectors for potential application in visible light communication

Due to the wavelength-selective absorption characteristic of indium gallium nitride (InGaN) ternary alloy, the InGaN-based photodetectors (PDs) show great potential as high signal-to-noise ratio (SNR) receivers in the visible light communication (VLC) system. However, the application of InGaN-based PDs with simple structure in the VLC system is limited by slow speed. Integration of graphene (Gr) with InGaN is an effective strategy for overcoming the limitation. Herein, we report on a high responsivity and fast response PDs based on Gr/InGaN heterojunctions. It finds that the three-layer Gr (T-Gr) can effectively improve the InGaN-based PDs photoelectric properties. The T-Gr/InGaN PDs show a high responsivity of 1.39 A/W@-3 V and a short rise/fall time of 60/200 µs, which are attributed to the combination of the high-quality InGaN epitaxial films and finite density of states of three-layer graphene. The fast response with high responsivity endows the T-Gr/InGaN PDs with great potential for selective detection of the VLC system.

A GaSe/Si-based vertical 2D/3D heterojunction for high-performance self-driven photodetectors

We report on the fabrication of a vertical 2D/3D heterojunction diode between gallium selenide (GaSe) and silicon (Si), and describe its photoresponse properties. Kelvin probe force microscopy (KPFM) has been employed to investigate the surface potentials of the GaSe/Si heterostructure, leading to the evaluation of the value of the conduction band offset at the heterostructure interface. The current-voltage measurements on the heterojunction device display a diode-like nature. This diode-like nature is attributed to the type-II band alignment that exists at the p-n interface. The key parameters of a photodetector, such as photoresponsivity, detectivity, and external quantum efficiency, have been calculated for the fabricated device and compared with those of other similar devices. The photodetection measurements of the GaSe/Si heterojunction diode show excellent performance of the device, with high photoresponsivity, detectivity, and EQE values of ∼2.8 × 10³ A W^-1, 6.2 × 10¹² Jones, and 6011, respectively, at a biasing of -5 V. Even at zero biasing, a high photoresponsivity of 6 A W^-1 was obtained, making it a self-powered device. Therefore, the GaSe/Si self-driven heterojunction diode has promising potential in the field of efficient optoelectronic devices.

Schottky-type GaN-based UV photodetector with atomic-layer-deposited TiN thin film as electrodes

In this work, a GaN-based UV photodetector with an asymmetric electrode structure was fabricated by atomic layer deposition (ALD) of TiN layers. The thickness of the TiN can be monitored in situ by a quartz crystal microbalance (QCM) and precisely controlled through the modulation of deposition cycles. During the ALD process, periodic variation in the QCM frequency was observed and correlated to the physical adsorption, chemical bonding, and the excessive precursor exhaust, which included tetrakis(dimethylamino)titanium (TDMAT) and N sources. The asymmetric TiN/GaN/TiN photodetector showed excellent photosensing performance, with a UV-visible rejection ratio of 173, a responsivity of 4.25 A/W, a detectivity of 1.1×10¹³ Jones, and fast response speeds (a rise time of 69 μs and a decay time of 560 μs). Moreover, the device exhibits high stability, with an attenuation of only approximately 0.5% after 360 nm light irradiation for 157 min. This result indicates the potential of TiN as a transparent contact electrode for GaN-based optoelectronic devices.

High-Performance Harsh-Environment-Resistant GaOX Solar-Blind Photodetectors via Defect and Doping Engineering

Gallium oxide (Ga₂ O₃ ), with an ultrawide bandgap, is currently regarded as one of the most promising materials for solar-blind photodetectors (SBPDs), which are greatly demanded in harsh environment, such as space exploration and flame prewarning. However, realization of high-performance SBPDs with high tolerance toward harsh environments based on low-cost Ga₂ O₃ material faces great challenges. Here, defect and doping (DD) engineering towards amorphous GaO_X (a-GaO_X ) has been proposed to obtain ultrasensitive SBPDs for harsh condition application. Serious oxygen deficiency and doping compensation of the engineered a-GaO_X film ensure the high response currents and low dark currents, respectively. Annealing item in nitrogen of DD engineering also incurs the recrystallization of material, formation of nanopores by oxygen escape, and suppression of sub-bandgap defect states. As a result, the tailored GaO_X SBPD based on DD engineering not only harvests a record-high responsivity rejection ratio (R_{254 nm} /R_{365 nm} ) of 1.8 × 10⁷ , 10² times higher detectivity, and 2 × 10² times faster decay speed than the control device, but also keeps a high responsivity, high photo-to-dark current ratio, and sharp imaging capability even at high temperature (280 °C) or high bias (100 V). The proposed DD engineering provides an effective strategy towards highly harsh-environment-resistant GaO_X SBPDs.

A Self-Powered Transparent Photodetector Based on Detached Vertical (In,Ga)N Nanowires with 360° Omnidirectional Detection for Underwater Wireless Optical Communication

Underwater wireless optical communication (UWOC) is a wireless communication technology using visible light to transmit data in an underwater environment, which has wide applications. Based on lift-off (In,Ga)N nanowires, this work has proposed and successfully demonstrated a self-powered photoelectrochemical (PEC) photodetector (PD) with excellent transmissivity. The transparent functionality of the PD is critical for 360° omnidirectional underwater detection, which was realized by detaching the (In,Ga)N nanowires from the opaque epitaxial substrates to the indium tin oxide (ITO)/glass. It was also found that the insulating SiO2 layer can enhance the photocurrent by about 12 times. The core-shell structure of the nanowires is beneficial for generating carriers and contributing to the photocurrent. Furthermore, a communication system with ASCII code is set to demonstrate the PD detection in underwater communication. This work paves an effective way to develop 360° omnidirectional PDs for the wide applications in UWOC system and underwater photodetection.

A nanopillar-modified high-sensitivity asymmetric graphene-GaN photodetector

Integration of two-dimensional (2D) materials with three-dimensional (3D) semiconductors leads to intriguing optical and electrical properties that surpass those of the original materials. Here, we report the high performance of a GaN nanopillar-modified graphene/GaN/Ti/Au photodetector (PD). After etching on the surface of a GaN film, GaN nanopillars exhibit multiple functions for improving the detection performance of the PD. Under dark conditions, surface etching reduces the contact area of GaN with the graphene electrode, leading to a reduced dark current for the PD. When illuminated with UV light, the nanopillars enable an enhanced and localized electric field inside GaN, resulting in an ∼20% UV light absorption enhancement and a several-fold increased photocurrent. In addition, the nanopillars are intentionally etched beneath the metal Ti/Au electrode to modify the semiconductor-metal junction. Further investigation shows that the modified GaN/Ti/Au contact triggers a prominent rectifying I-V behaviour. Benefiting from the nanopillar modification, the proposed PD shows a record large detectivity of 1.85 × 10¹⁷ Jones, a small dark current of 5.2 nA at +3 V bias, and a nearly three order of magnitude rectification ratio enhancement compared with non-nanopillar PDs. This pioneering work provides a novel nanostructure-modifying method for combining 2D materials and 3D semiconductors to improve the performances of electronic and optoelectronic devices.

Proliferation of the Light and Gas Interaction with GaN Nanorods Grown on a V-Grooved Si(111) Substrate for UV Photodetector and NO2 Gas Sensor Applications

Although excellent milestones of III-nitrides in optoelectronic devices have been achieved, the focus on the optimization of their geometrical structure for multiple applications is very rare. To address this issue, we exclusively designed a prototype device to enhance the photoconversion efficiency and gas interaction capabilities of GaN nanorods (NRs) grown on a V-grooved Si(100) substrate with Si(111) facets for photodetector and gas sensor applications. Photoluminescence studies have demonstrated an increased surface-to-volume ratio and light trapping for GaN NRs grown on V-grooved Si(111). GaN NRs on V-grooved Si(100) with Si(111) facets exhibited high photodetection performance in terms of photoresponsivity (217 mA/cm²), detectivity (3 × 10¹³ Jones), and external quantum efficiency (2.73 × 10⁵%) compared to GaN NRs grown on plain Si(111). Owing to the robust interconnection between NRs and a high surface-to-volume ratio, the GaN NRs grown on V-grooved Si(100) with Si(111) facets probed for NO₂ detection with the assistance of photonic energy. The photo-assisted sensing makes it possible to detect NO₂ gas at the ppb level at room temperature, resulting in significant power reduction. The device showed high selectivity to NO₂ against other target gases, such as NO, H₂S, H₂, NH₃, and CO. The device showed excellent long-term stability at room temperature; the humidity effect on the device performance was also examined. The excellent device performance was due to the following: (i) benefited from the V-grooved Si structure, GaN NRs significantly trapped the incident light, which promoted high photocurrent conversion efficiency and (ii) GaN NRs grown on V-grooved Si(100) with Si(111) facets increased the surface-to-volume ratio and thus improved the gas interaction with a better diffusion ratio and high light trapping, which resulted in increased response/recovery times. These results represent an important forward step in prototype devices for multiple applications in materials research.

High responsivity and high speed InGaN-based blue-light photodetectors on Si substrates

Due to the adjustable band gap, the excellent radiation stability, and the high electron mobility of InGaN, the InGaN-based blue-light photodetectors (PDs) show great potential in visible light communication (VLC) systems. However, the applications of InGaN-based blue-light PDs in VLC systems are limited by the poor performance caused by the poor crystalline quality of InGaN materials. Herein, we report on the fabrication of high responsivity and high response speed InGaN-based metal–semiconductor metal (MSM) blue-light PDs using high-quality InGaN epitaxial films grown on Si substrates by the combination of low-temperature pulsed laser deposition (LT-PLD) and high-temperature metal organic chemical deposition (HT-MOCVD). The technology can not only suppress the interfacial reactions between films and substrates by LT-PLD growth, but also promote the lateral overgrowth of InGaN and improve the crystalline quality of InGaN-based epitaxial films by HT-MOCVD growth. Based on the high-quality InGaN-based materials, high-performance InGaN-based blue-light PDs are fabricated accordingly with a high responsivity of 0.49 A W⁻¹ and a short rise/fall response time of 1.25/1.74 ms at an applied bias of −3 V. The performance is better than the results for the InGaN-based PDs previously reported. The InGaN-based blue-light PDs shed light on the potential for VLC system applications.

High-performance InGaN-based blue-light PDs have been fabricated with a high responsivity of 0.49 A W⁻¹ and a short rise/fall response time of 1.25/1.74 ms at an applied bias of −3 V.

Room-temperature fabrication of SiC microwire photodetectors on rigid and flexible substrates via femtosecond laser direct writing

Flexible ultraviolet (UV) photodetectors (PDs) have gained increasing demand because of their widespread applications in wearable devices. However, difficulties associated with complicated fabrication technologies significantly limit their scope of application. Herein, via the development of a femtosecond laser direct writing (FsLDW) strategy, silicon carbide (SiC) nanoparticles are found to be assembled in a single microwire within 30 s. The surface of the deposited SiC microwire presents a three-dimensional porous structure, which is conducive to improving the responsivity of the device. The responsivity of a SiC-based microwire PD to UV light at 365 nm is found to be 55.89 A W-1 at a 1 V bias. The as-fabricated SiC microwire PDs on a glass substrate exhibit thermal stability at 350 °C, and the response speed of the PDs becomes notably faster at high temperatures, suggesting their promising applications in harsh conditions. Due to the low-temperature processing characteristics of this process, they can be prepared not only on glass substrates, but also on thermosensitive polymer substrates without an extra transfer process. Moreover, the SiC microwires prepared via FsLDW are directly deposited on the flexible substrate, and the prepared flexible SiC-based PDs can still work stably after being bent 2000 times. This research unveils a feasible way to fabricate a PD with excellent thermal stability and mechanical flexibility.