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Yamamoto M, Goto S, Tang R, Yamazaki K. Toward three-dimensionally ordered nanoporous graphene materials: template synthesis, structure, and applications. Chem Sci 2024; 15:1953-1965. [PMID: 38332834 PMCID: PMC10848746 DOI: 10.1039/d3sc05022j] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 09/25/2023] [Accepted: 12/23/2023] [Indexed: 02/10/2024] Open
Abstract
Precise template synthesis will realize three-dimensionally ordered nanoporous graphenes (NPGs) with a spatially controlled seamless graphene structure and fewer edges. These structural features result in superelastic nature, high electrochemical stability, high electrical conductivity, and fast diffusion of gases and ions at the same time. Such innovative 3D graphene materials are conducive to solving energy-related issues for a better future. To further improve the attractive properties of NPGs, we review the template synthesis and its mechanism by chemical vapor deposition of hydrocarbons, analysis of the nanoporous graphene structure, and applications in electrochemical and mechanical devices.
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Affiliation(s)
- Masanori Yamamoto
- Department of Chemical Science and Engineering, Tokyo Institute of Technology Ookayama 2-12-1 Meguro Tokyo 152-8550 Japan
- Institute of Multidisciplinary Research for Advanced Materials, Tohoku University 2-1-1 Katahira, Aoba Sendai 980-8577 Japan
| | - Shunsuke Goto
- Institute of Multidisciplinary Research for Advanced Materials, Tohoku University 2-1-1 Katahira, Aoba Sendai 980-8577 Japan
| | - Rui Tang
- Institute of Multidisciplinary Research for Advanced Materials, Tohoku University 2-1-1 Katahira, Aoba Sendai 980-8577 Japan
| | - Kaoru Yamazaki
- RIKEN Center for Advanced Photonics, RIKEN 2-1 Hirosawa Wako Saitama 351-0198 Japan
- Institute for Materials Research, Tohoku University 2-1-1 Katahira, Aoba Sendai 980-8577 Japan
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2
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Morais WP, Inacio GJ, Amorim RG, Paz WS, Pansini FNN, de Souza FAL. Topological line defects in hexagonal SiC monolayer. Phys Chem Chem Phys 2023. [PMID: 38037394 DOI: 10.1039/d3cp04267g] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/02/2023]
Abstract
Defect engineering of two-dimensional (2D) materials offers an unprecedented route to increase their functionality and broaden their applicability. In light of the recent synthesis of the 2D Silicon Carbide (SiC), a deep understanding of the effect of defects on the physical and chemical properties of this new SiC allotrope becomes highly desirable. This study investigates 585 extended line defects (ELDs) in hexagonal SiC considering three types of interstitial atom pairs (SiSi-, SiC-, and CC-ELD) and using computational methods like Density Functional Theory, Born-Oppenheimer Molecular Dynamics, and Kinetic Monte-Carlo (KMC). Results show that the formation of all ELD systems is endothermic, with the CC-ELD structure showing the highest stability at 300 K. To further characterize the ELDs, simulated scanning tunneling microscopy (STM) is employed, and successfully allow identify and distinguish the three types of ELDs. Although pristine SiC has a direct band gap of 2.48 eV, the presence of ELDs introduces mid-gap states derived from the pz orbitals at the defect sites. Furthermore, our findings reveal that the ELD region displays enhanced reactivity towards hydrogen adsorption, which was confirmed by KMC simulations. Overall, this research provides valuable insights into the structural, electronic, and reactivity properties of ELDs in hexagonal SiC monolayers and paves the way for potential applications in areas such as catalysis, optoelectronics, and surface science.
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Affiliation(s)
- Wallace P Morais
- Departamento de Física, Universidade Federal do Espírito Santo, Vitória-ES, 29075-910, Brazil
| | - Guilherme J Inacio
- Departamento de Física, Universidade Federal do Espírito Santo, Vitória-ES, 29075-910, Brazil
| | - Rodrigo G Amorim
- Departamento de Física, ICEx, Universidade Federal Fluminense - UFF, Volta Redonda/RJ, Brazil
| | - Wendel S Paz
- Departamento de Física, Universidade Federal do Espírito Santo, Vitória-ES, 29075-910, Brazil
| | - Fernando N N Pansini
- Departamento de Física, Universidade Federal do Espírito Santo, Vitória-ES, 29075-910, Brazil
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Yu M, Hu Z, Zhou J, Lu Y, Guo W, Zhang Z. Retrieving Grain Boundaries in 2D Materials. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2023; 19:e2205593. [PMID: 36461686 DOI: 10.1002/smll.202205593] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/09/2022] [Revised: 11/13/2022] [Indexed: 06/17/2023]
Abstract
The coalescence of randomly distributed grains with different crystallographic orientations can result in pervasive grain boundaries (GBs) in 2D materials during their chemical synthesis. GBs not only are the inherent structural imperfection that causes influential impacts on structures and properties of 2D materials, but also have emerged as a platform for exploring unusual physics and functionalities stemming from dramatic changes in local atomic organization and even chemical makeup. Here, recent advances in studying the formation mechanism, atomic structures, and functional properties of GBs in a range of 2D materials are reviewed. By analyzing the growth mechanism and the competition between far-field strain and local chemical energies of dislocation cores, a complete understanding of the rich GB morphologies as well as their dependence on lattice misorientations and chemical compositions is presented. Mechanical, electronic, and chemical properties tied to GBs in different materials are then discussed, towards raising the concept of using GBs as a robust atomic-scale scaffold for realizing tailored functionalities, such as magnetism, luminescence, and catalysis. Finally, the future opportunities in retrieving GBs for making functional devices and the major challenges in the controlled formation of GB structures for designed applications are commented.
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Affiliation(s)
- Maolin Yu
- Key Laboratory for Intelligent Nano Materials and Devices of Ministry of Education, State Key Laboratory of Mechanics and Control of Mechanical Structures, and Institute for Frontier Science, Nanjing University of Aeronautics and Astronautics, Nanjing, 210016, China
| | - Zhili Hu
- Key Laboratory for Intelligent Nano Materials and Devices of Ministry of Education, State Key Laboratory of Mechanics and Control of Mechanical Structures, and Institute for Frontier Science, Nanjing University of Aeronautics and Astronautics, Nanjing, 210016, China
| | - Jingzhuo Zhou
- Department of Mechanical Engineering, City University of Hong Kong, Kowloon, Hong Kong SAR, 999077, China
| | - Yang Lu
- Department of Mechanical Engineering, City University of Hong Kong, Kowloon, Hong Kong SAR, 999077, China
| | - Wanlin Guo
- Key Laboratory for Intelligent Nano Materials and Devices of Ministry of Education, State Key Laboratory of Mechanics and Control of Mechanical Structures, and Institute for Frontier Science, Nanjing University of Aeronautics and Astronautics, Nanjing, 210016, China
| | - Zhuhua Zhang
- Key Laboratory for Intelligent Nano Materials and Devices of Ministry of Education, State Key Laboratory of Mechanics and Control of Mechanical Structures, and Institute for Frontier Science, Nanjing University of Aeronautics and Astronautics, Nanjing, 210016, China
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4
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Zhao Z, Wang Y, Wang C. Anomalous wrinkle propagation in polycrystalline graphene with tilt grain boundaries. Phys Chem Chem Phys 2023; 25:3681-3694. [PMID: 36650982 DOI: 10.1039/d2cp05067f] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/24/2022]
Abstract
Understanding the propagation of dynamic wrinkles in polycrystalline graphene with grain boundaries (GBs) is critical to the practical application of graphene-based nanodevices. Although wrinkle propagation behavior in pristine graphene (PG) and some defect-containing graphene samples have been investigated, there are no studies on the dynamic behavior of graphene with tilt GBs. Here, nine tilt GBs are constructed in graphene, and molecular dynamics (MD) simulations are performed to investigate anomalous wrinkle propagation. The MD simulation results show that a larger misorientation angle α first enhances the shielding effect of tilt GBs on wrinkle propagation before it weakens. The maximum Δz root mean square (RMS) shows that a greater misorientation angle α first increases the maximum RMS of the GB region (RGB) before it then decreases, while the maximum RMS of R80 exhibits the opposite trend. Moreover, approximately 96% of the C60 kinetic energy is converted into kinetic and potential energies in graphene, and the potential energy in graphene presents two evolution modes. Phase diagrams are plotted to study the effect of the distance d1 and rotation angle β on the wrinkle propagation and sensitivity of the maximum RMS value to d1. It is expected that our results can provide a fundamental understanding of defect engineering and guidelines to design protectors, energy absorbers, and defect detectors in nanodevices.
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Affiliation(s)
- Zihui Zhao
- National Key Laboratory of Science and Technology on Advanced Composites in Special Environments, Harbin Institute of Technology, Harbin 150080, China. .,Center for Composite Materials and Structures, Harbin Institute of Technology, Harbin 150001, China
| | - Yafei Wang
- Institute of Mechanics and Computational Engineering, Department of Aeronautics and Astronautics, Fudan University, 220 Handan Road, Shanghai 200433, China
| | - Changguo Wang
- National Key Laboratory of Science and Technology on Advanced Composites in Special Environments, Harbin Institute of Technology, Harbin 150080, China. .,Center for Composite Materials and Structures, Harbin Institute of Technology, Harbin 150001, China
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Yang SJ, Choi MY, Kim CJ. Engineering Grain Boundaries in Two-Dimensional Electronic Materials. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023; 35:e2203425. [PMID: 35777352 DOI: 10.1002/adma.202203425] [Citation(s) in RCA: 3] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/15/2022] [Revised: 06/30/2022] [Indexed: 06/15/2023]
Abstract
Engineering the boundary structures in 2D materials provides an unprecedented opportunity to program the physical properties of the materials with extensive tunability and realize innovative devices with advanced functionalities. However, structural engineering technology is still in its infancy, and creating artificial boundary structures with high reproducibility remains difficult. In this review, various emergent properties of 2D materials with different grain boundaries, and the current techniques to control the structures, are introduced. The remaining challenges for scalable and reproducible structure control and the outlook on the future directions of the related techniques are also discussed.
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Affiliation(s)
- Seong-Jun Yang
- Center for Epitaxial van der Waals Quantum Solids, Institute for Basic Science (IBS), Pohang, Gyeongbuk, 37673, Republic of Korea
- Department of Chemical Engineering, Pohang University of Science and Technology, Pohang, Gyeongbuk, 37673, Republic of Korea
| | - Min-Yeong Choi
- Center for Epitaxial van der Waals Quantum Solids, Institute for Basic Science (IBS), Pohang, Gyeongbuk, 37673, Republic of Korea
- Department of Chemical Engineering, Pohang University of Science and Technology, Pohang, Gyeongbuk, 37673, Republic of Korea
| | - Cheol-Joo Kim
- Center for Epitaxial van der Waals Quantum Solids, Institute for Basic Science (IBS), Pohang, Gyeongbuk, 37673, Republic of Korea
- Department of Chemical Engineering, Pohang University of Science and Technology, Pohang, Gyeongbuk, 37673, Republic of Korea
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Ma R, Qiu L, Zhang L, Tang DM, Wang Y, Zhang B, Ding F, Liu C, Cheng HM. Nucleation of Single-Wall Carbon Nanotubes from Faceted Pt Catalyst Particles Revealed by in Situ Transmission Electron Microscopy. ACS NANO 2022; 16:16574-16583. [PMID: 36228117 DOI: 10.1021/acsnano.2c06012] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/16/2023]
Abstract
Revealing the nucleation and growth mechanism of single-wall carbon nanotubes (SWCNTs) from faceted solid catalysts is crucial to the control of their structure and properties. However, due to the small size and complex growth environment, the early stages and dynamic process of SWCNT nucleation have rarely been directly revealed, especially under atmospheric conditions. Here, we report the atomic-resolved nucleation of SWCNTs from the faces of truncated octahedral Pt catalysts under atmospheric pressure using a transmission electron microscope equipped with a gas-cell. It was found that the graphene layers were initially formed preferentially on (111) surfaces, which then joined together to form an annular belt and a hemispherical cap, followed by the elongation of the SWCNT. Based on the observations, an annular belt assembly nucleation model and a possible chirality control mechanism are proposed for SWCNTs grown from well-faceted Pt catalysts, which provides useful guidance for the controlled synthesis of SWCNTs by catalyst design.
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Affiliation(s)
- Ruixue Ma
- Shenyang National Laboratory for Materials Science, Institute of Metal Research (IMR), Chinese Academy of Sciences, 72 Wenhua Road, Shenyang 110016, China
- School of Materials Science and Engineering, University of Science and Technology of China (USTC), 72 Wenhua Road, Shenyang 110016, China
| | - Lu Qiu
- Center for Multidimensional Carbon Materials, Institute for Basic Science (IBS), Ulsan 44919, Republic of Korea
| | - Lili Zhang
- Shenyang National Laboratory for Materials Science, Institute of Metal Research (IMR), Chinese Academy of Sciences, 72 Wenhua Road, Shenyang 110016, China
| | - Dai-Ming Tang
- International Center for Materials Nanoarchitectonics (MANA), National Institute for Materials Science (NIMS), Namiki 1-1, Tsukuba, Ibaraki 305-0044, Japan
| | - Yang Wang
- Shenyang National Laboratory for Materials Science, Institute of Metal Research (IMR), Chinese Academy of Sciences, 72 Wenhua Road, Shenyang 110016, China
- School of Materials Science and Engineering, University of Science and Technology of China (USTC), 72 Wenhua Road, Shenyang 110016, China
| | - Bingsen Zhang
- Shenyang National Laboratory for Materials Science, Institute of Metal Research (IMR), Chinese Academy of Sciences, 72 Wenhua Road, Shenyang 110016, China
| | - Feng Ding
- Center for Multidimensional Carbon Materials, Institute for Basic Science (IBS), Ulsan 44919, Republic of Korea
- Department of Materials Science and Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan 44919, Republic of Korea
| | - Chang Liu
- Shenyang National Laboratory for Materials Science, Institute of Metal Research (IMR), Chinese Academy of Sciences, 72 Wenhua Road, Shenyang 110016, China
| | - Hui-Ming Cheng
- Shenyang National Laboratory for Materials Science, Institute of Metal Research (IMR), Chinese Academy of Sciences, 72 Wenhua Road, Shenyang 110016, China
- Faculty of Materials Science and Engineering/Institute of Technology for Carbon Neutrality, Shenzhen Institute of Advanced Technology, Chinese Academy of Sciences, Shenzhen, 518055, China
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Li Y, Liu H, Chang Z, Li H, Wang S, Lin L, Peng H, Wei Y, Sun L, Liu Z. Slip-Line-Guided Growth of Graphene. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2022; 34:e2201188. [PMID: 35511471 DOI: 10.1002/adma.202201188] [Citation(s) in RCA: 4] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/05/2022] [Revised: 04/22/2022] [Indexed: 06/14/2023]
Abstract
Manipulating the crystal orientation of emerging 2D materials via chemical vapor deposition (CVD) is a key premise for obtaining single-crystalline films and designing specific grain-boundary (GB) structures. Herein, the controllable crystal orientation of graphene during the CVD process is demonstrated on a single-crystal metal surface with preexisting atomic-scale stair steps resulting from dislocation slip lines. The slip-line-guided growth principle is established to explain and predict the crystal orientation distribution of graphene on a variety of metal facets, especially for the multidirectional growth cases on Cu(hk0) and Cu(hkl) substrates. Not only large-area single-crystal graphene, but also bicrystal graphene with controllable GB misorientations, are successfully synthesized by rationally employing tailored metal substrate facets. As a demonstration, bicrystal graphenes with misorientations of ≈21° and ≈11° are constructed on Cu(410) and Cu(430) foils, respectively. This guideline builds a bridge linking the crystal orientation of graphene and the substrate facet, thereby opening a new avenue for constructing bicrystals with the desired GB structures or manipulating 2D superlattice twist angles in a bottom-up manner.
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Affiliation(s)
- Yanglizhi Li
- Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, Beijing, 100871, P. R. China
- Academy for Advanced Interdisciplinary Studies, Peking University, Beijing, 100871, P. R. China
- Beijing Graphene Institute, Beijing, 100095, P. R. China
| | - Haiyang Liu
- Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, Beijing, 100871, P. R. China
- Beijing Graphene Institute, Beijing, 100095, P. R. China
| | - Zhenghua Chang
- LNM, Institute of Mechanics, Chinese Academy of Sciences, Beijing, 100190, P. R. China
- School of Engineering Sciences, University of Chinese Academy of Sciences, Beijing, 100049, P. R. China
| | - Haoxiang Li
- Beijing Graphene Institute, Beijing, 100095, P. R. China
| | - Shenxing Wang
- Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, Beijing, 100871, P. R. China
- Beijing Graphene Institute, Beijing, 100095, P. R. China
| | - Li Lin
- Beijing Graphene Institute, Beijing, 100095, P. R. China
- School of Materials Science and Engineering, Peking University, Beijing, 100871, P. R. China
| | - Hailin Peng
- Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, Beijing, 100871, P. R. China
- Beijing Graphene Institute, Beijing, 100095, P. R. China
| | - Yujie Wei
- LNM, Institute of Mechanics, Chinese Academy of Sciences, Beijing, 100190, P. R. China
- School of Engineering Sciences, University of Chinese Academy of Sciences, Beijing, 100049, P. R. China
| | - Luzhao Sun
- Beijing Graphene Institute, Beijing, 100095, P. R. China
| | - Zhongfan Liu
- Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, Beijing, 100871, P. R. China
- Beijing Graphene Institute, Beijing, 100095, P. R. China
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Liu F, Dong J, Kim NY, Lee Z, Ding F. Growth and Selective Etching of Twinned Graphene on Liquid Copper Surface. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2021; 17:e2103484. [PMID: 34514727 DOI: 10.1002/smll.202103484] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/16/2021] [Revised: 08/17/2021] [Indexed: 06/13/2023]
Abstract
Although grain boundaries (GBs) in two-dimensional (2D) materials have been extensively observed and characterized, their formation mechanism still remains unexplained. Here a general model has reported to elucidate the mechanism of formation of GBs during 2D materials growth. Based on our model, a general method is put forward to synthesize twinned 2D materials on a liquid substrate. Using graphene growth on liquid Cu surface as an example, the growth of twinned graphene has been demonstrated successfully, in which all the GBs are ultra-long straight twin boundaries. Furthermore, well-defined twin boundaries (TBs) are found in graphene that can be selectively etched by hydrogen gas due to the preferential adsorption of hydrogen atoms at high-energy twins. This study thus reveals the formation mechanism of GBs in 2D materials during growth and paves the way to grow various 2D nanostructures with controlled GBs.
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Affiliation(s)
- Fengning Liu
- Center for Multidimensional Carbon Materials, Institute for Basic Science, Ulsan, 44919, South Korea
- School of Materials Science and Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan, 44919, South Korea
| | - Jichen Dong
- Center for Multidimensional Carbon Materials, Institute for Basic Science, Ulsan, 44919, South Korea
- Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Sciences, Beijing, 100190, P. R. China
| | - Na Yeon Kim
- Center for Multidimensional Carbon Materials, Institute for Basic Science, Ulsan, 44919, South Korea
- School of Materials Science and Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan, 44919, South Korea
| | - Zonghoon Lee
- Center for Multidimensional Carbon Materials, Institute for Basic Science, Ulsan, 44919, South Korea
- School of Materials Science and Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan, 44919, South Korea
| | - Feng Ding
- Center for Multidimensional Carbon Materials, Institute for Basic Science, Ulsan, 44919, South Korea
- School of Materials Science and Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan, 44919, South Korea
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