Theoretical Prediction of Two-Dimensional Materials, Behavior, and Properties

Growth of Single Crystalline 2D Materials beyond Graphene on Non-metallic Substrates

The advent of 2D materials has ushered in the exploration of their synthesis, characterization and application. While plenty of 2D materials have been synthesized on various metallic substrates, interfacial interaction significantly affects their intrinsic electronic properties. Additionally, the complex transfer process presents further challenges. In this context, experimental efforts are devoted to the direct growth on technologically important semiconductor/insulator substrates. This review aims to uncover the effects of substrate on the growth of 2D materials. The focus is on non-metallic substrate used for epitaxial growth and how this highlights the necessity for phase engineering and advanced characterization at atomic scale. Special attention is paid to monoelemental 2D structures with topological properties. The conclusion is drawn through a discussion of the requirements for integrating 2D materials with current semiconductor-based technology and the unique properties of heterostructures based on 2D materials. Overall, this review describes how 2D materials can be fabricated directly on non-metallic substrates and the exploration of growth mechanism at atomic scale.

Doping-mediated electronic and magnetic properties of graphene-like ionic NaX (X = F and Cl) monolayers

In this work, the stability, and electronic and magnetic properties of pristine and doped graphene-like ionic NaX (X = F and Cl) monolayers are explored using first-principles calculations. The good stability of NaF and NaCl monolayers is confirmed by phonon dispersion curves and ab initio molecular dynamics simulations. Electronic structure calculations show their insulator nature with large indirect band gaps of 5.43 (7.26) and 5.06 (6.32) eV as calculated with the PBE (HSE06) functional, respectively. In addition, their ionic character is also demonstrated. Furthermore, a doping approach is explored to functionalize NaX monolayers for spintronic applications. For such a goal, IIA- and VIA-group atoms are selected as dopants due to their dissimilar valence electronic configuration as compared with the host atoms. The results indicate the emergence of magnetic semiconductor nature with a total magnetic moment of 1μB. Herein, magnetic properties are produced mainly by the dopant atoms, which induce new middle-gap energy states around the Fermi level. Finally, the effects of codoping the NaF monolayer with Ca and O and NaCl with Ba and O are also examined. Adjacent Ca-O and Ba-O pairs preserve the non-magnetic nature. Further separating dopants leads to the emergence of magnetic semiconductor behavior, with lower magnetization than separate doping. This work introduces new ionic 2D materials for optoelectronic and spintronic applications, contributing to the research effort to find out new 2D multifunctional materials.

Interfacial Engineering Enables Perovskite Heteroepitaxial Growth on Black Phosphorus for Flexible X-ray Detectors

2D materials with atomic-scale thickness and mechanical robustness are required for flexible devices. The superior optoelectronic properties and high-Z atoms in metal halide perovskites render them desirable for X-ray detection, but the intrinsic brittleness is an obstacle hampering the applications in flexible detectors. Herein, an interfacial engineering strategy is demonstrated for the epitaxial growth of methylammonium lead bromide (MAPbBr3 ) on black phosphorus (BP) for flexible X-ray detectors. The mechanically robust, high-quality heterostructure consisting of a Pb transition layer is synthesized for the two-way bridging of BP and MAPbBr3 . Excellent optoelectronic properties such as a high X-ray sensitivity of 1,609 ± 122 µC Gy-1  cm-2 (80 times higher than that of the commercial amorphous Se), a fast response time of 40 ± 5 ms, as well as a low detection limit of 3 µGys-1 (about a fifteenth of the medical chest X-ray dose rate) are achieved from the simple and planar direct X-ray detector fabricated on an organic filter membrane. More importantly, these flat and simple devices are bendable and mechanically durable by exhibiting only 10% photocurrent degradation after 200 bending cycles. The novel heterostructure has great potential in large-area, flexible, and sensitive X-ray detection applications.

Performance of the r2SCAN Functional in Transition Metal Oxides

We assess the accuracy and computational efficiency of the recently developed meta-generalized gradient approximation (metaGGA) functional, restored regularized strongly constrained and appropriately normed (r²SCAN), in transition metal oxide (TMO) systems and compare its performance against SCAN. Specifically, we benchmark the r²SCAN-calculated oxidation enthalpies, lattice parameters, on-site magnetic moments, and band gaps of binary 3d TMOs against the SCAN-calculated and experimental values. Additionally, we evaluate the optimal Hubbard U correction required for each transition metal (TM) to improve the accuracy of the r²SCAN functional, based on experimental oxidation enthalpies, and verify the transferability of the U values by comparing against experimental properties on other TM-containing oxides. Notably, including the U-correction with r²SCAN increases the lattice parameters, on-site magnetic moments, and band gaps of TMOs, apart from an improved description of the ground state electronic state in narrow band gap TMOs. The r²SCAN and r²SCAN+U calculated oxidation enthalpies follow the qualitative trends of SCAN and SCAN+U, with r²SCAN and r²SCAN+U predicting marginally larger lattice parameters, smaller magnetic moments, and lower band gaps compared to SCAN and SCAN+U, respectively. We observe the overall computational time (i.e., for all ionic+electronic steps) required for r²SCAN(+U) to be lower than SCAN(+U). Thus, the r²SCAN(+U) framework can offer a reasonably accurate description of the ground state properties of TMOs with better computational efficiency than SCAN(+U).

Cu2O/Co3O4 nanoarrays for rapid quantitative analysis of hydrogen sulfide in blood

2D heterostructure nanoarrays have emerged as a promising sensing material for rapid disease detection applications. In this study, a bio-H₂S sensor based on Cu₂O/Co₃O₄ nanoarrays was proposed, the controllable preparation of the nanoarrays being achieved by exploring the experimental parameters of the 2D electrodeposition in situ assembly process. The nanoarrays were designed as a multi-barrier system with strict periodicity and long-range order. Based on the interfacial conductance modulation and vulcanization reaction of Cu₂O and Co₃O₄, the sensor exhibited superior sensitivity, selectivity, and stability to H₂S in human blood. In addition, the sensor exhibited a reasonable response to 0.1 μmol L^-1 Na₂S solution, indicating that it had a low detection limit for practical applications. Moreover, first-principles calculations were performed to study changes in the heterointerface during the sensing process and the mechanism of rapid response of the sensor. This work demonstrated the reliability of Cu₂O/Co₃O₄ nanoarrays applied in portable sensors for the rapid detection of bio-H₂S.

Integration of Nanographenes and Organic Chemistry - Toward Nanographene-based Two-Dimensional Materials

Graphene and its relatives have received considerable attention from the fields of physics and chemistry since the isolation of pristine graphene sheets. Nanographenes (NGs) are graphene fragments that are a few to tens of nanometers in diameter. Compared to graphene and its relatives, such as graphene oxides, NGs can be handled more easily, and their large π surface and oxygen functional groups on the edge allow postsynthetic modifications. The study of NGs is gradually shifting from the development of synthetic procedures to postsynthetic modification. From the structural point of view, NGs can be regarded as two-dimensional carbon polymers. Their unique structures and affinity for organic molecules make NGs excellent scaffolds for two-dimensional materials, which are now an important topic in organic and polymer chemistry. In this conceptual article, we introduce the position of NGs from the perspective of two-dimensional substances and briefly summarize both the structural features of NGs and the effects of functionalization on their physical properties. These are valuable when producing reasonable strategies for their postsynthetic modifications.

Tuning the Electronic and Optical Properties of the Novel Monolayer Noble-Transition-Metal Dichalcogenides Semiconductor β-AuSe via Strain: A Computational Investigation

The strain-controlled structural, electronic, and optical characteristics of monolayer β-AuSe are systematically studied using first-principles calculations in this paper. For the strain-free monolayer β-AuSe, the structure is dynamically stable and maintains good stability at room temperature. It belongs to the indirect band gap semiconductor, and its valence band maximum (VBM) and conduction band minimum (CBM) consist of hybrid Au-d and Se-p electrons. Au–Se is a partial ionic bond and a partial polarized covalent bond. Meanwhile, lone-pair electrons exist around Se and are located between different layers. Moreover, its optical properties are anisotropic. As for the strained monolayer β-AuSe, it is susceptible to deformation by uniaxial tensile strain. It remains the semiconductor when applying different strains within an extensive range; however, only the biaxial compressive strain is beyond −12%, leading to a semiconductor–semimetal transition. Furthermore, it can maintain relatively stable optical properties under a high strain rate, whereas the change in optical properties is unpredictable when applying different strains. Finally, we suggest that the excellent carrier transport properties of the strain-free monolayer β-AuSe and the stable electronic properties of the strained monolayer β-AuSe originate from the p–d hybridization effect. Therefore, we predict that monolayer β-AuSe is a promising flexible semiconductive photoelectric material in the high-efficiency nano-electronic and nano-optoelectronic fields.

Stability and electronic properties of gallenene

Two-dimensional metals offer intriguing possibilities to explore the metallic and other related properties in systems with reduced dimensionality. Here, following recent experimental reports of synthesis of two-dimensional metallic gallium (gallenene) on insulating substrates, we conduct a computational search of gallenene structures using the Particle Swarm Optimization algorithm, and identify stable low energy structures. Our calculations of the critical temperature for conventional superconductivity yield values of ∼7 K for gallenene. We also emulate the presence of the substrate by introducing the external confining potential and test its effect on the structures with unstable phonons.

Graph-based discovery and analysis of atomic-scale one-dimensional materials

Recent decades have witnessed an exponential growth in the discovery of low-dimensional materials (LDMs), benefiting from our unprecedented capabilities in characterizing their structure and chemistry with the aid of advanced computational techniques. Recently, the success of two-dimensional compounds has encouraged extensive research into one-dimensional (1D) atomic chains. Here, we present a methodology for topological classification of structural blocks in bulk crystals based on graph theory, leading to the identification of exfoliable 1D atomic chains and their categorization into a variety of chemical families. A subtle interplay is revealed between the prototypical 1D structural motifs and their chemical space. Leveraging the structure graphs, we elucidate the self-passivation mechanism of 1D compounds imparted by lone electron pairs, and reveal the dependence of the electronic band gap on the cationic percolation network formed by connections between structure units. This graph-theory-based formalism could serve as a source of stimuli for the future design of LDMs.

Data-Driven Quest for Two-Dimensional Non-van der Waals Materials

Two-dimensional (2D) materials are frequently associated with the sheets forming bulk layered compounds bonded by van der Waals (vdW) forces. The anisotropy and weak interaction between the sheets have also been the main criteria in the computational search for new 2D systems, predicting ∼2000 exfoliable compounds. However, some representatives of a new type of non-vdW 2D systems, without layered 3D analogues, were recently manufactured. For this novel materials class, data-driven design principles are still missing. Here, we outline a set of 8 binary and 20 ternary candidates by filtering the AFLOW-ICSD database according to structural prototypes. The oxidation state of the surface cations regulates the exfoliation energy with low oxidation numbers leading to weak bonding─a useful descriptor to obtain novel 2D materials also providing clear guidelines for experiments. A vast range of appealing electronic, optical, and magnetic properties make the candidates attractive for various applications and particularly spintronics.

Tuning the electronic, magnetic, and sensing properties of a single atom embedded microporous C3N6 monolayer towards XO2 (X = C, N, S) gases

2D carbon nitride frameworks have received a lot of attention due to their high potential in many applications, such as gas sensing.

Multi-scale modeling of 2D GaSe FETs with strained channels

Electronic devices based on bidimensional materials (2DMs) are the subject of an intense experimental research, that demands a tantamount theoretical activity. The latter must be hold up by a varied set of tools able to rationalize, explain and predict the operation principles of the devices. However, in the broad context of multi-scale computational nanoelectronics, there is currently a lack of simulation tools connecting atomistic descriptions with semi-classical mesoscopic device-level simulations and able to properly explain the performance of many state-of-the-art devices. To contribute to filling this gap we present a multi-scale approach that combines fine-level material calculations with a semi-classical drift-diffusion transport model. Its use is exemplified by assessing 2DM field effect transistors with strained channels, showing excellent capabilities to capture the changes in the crystal structure and their impact into the device performance. Interestingly, we verify the capacity of strain in monolayer GaSe to enhance the conduction of one type of carrier, enabling the possibility to mimic the effect of chemical doping on 2D materials. These results illustrate the great potential of the proposed approach to bridge levels of abstraction rarely connected before and thus contribute to the theoretical modeling of state-of-the-art 2DM-based devices.

Imparting α-Borophene with High Work Function by Fluorine Adsorption: A First-Principles Investigation

Increasing the work function of borophene over a large range is crucial for the development of borophene-based anode materials for highly efficient electronic devices. In this study, the effect of fluorine adsorption on the structures and stabilities, particularly on the work function, of α-borophene (BBP), was systematically investigated via first-principles density functional theory. The calculations indicated that BBP was well-stabilized by fluorine adsorption and the work functions of metallic fluorine-adsorbed BBPs (F_n-BBPs) sharply increased with increasing fluorine content. Moreover, the work function of F-BBP was close to that of the frequently used anode material Au and even, for other F_n-BBPs, higher than that of Pt. Furthermore, we have comprehensively discussed the factors, including substrate deformation, charge transfer, induced dipole moment, and Fermi and vacuum energy levels, affecting the improvement of work function. Particularly, we have demonstrated that the charge redistribution of the substrate induced by the bonding interaction between fluorine and the matrix predominantly contributes to the observed increase in the work function. Additionally, the effect of fluorine adsorption on the increase in the work function of BBP was significantly stronger than that of silicene or graphene. Our results concretely support the fact that F_n-BBPs can be extremely attractive anode materials for electronic device applications.

Stable Low-Dimensional Boron Chalcogenides from Planar Structural Motifs

There has been growing interest in searching for new low-dimensional (low-D) materials for nanoelectronics and energy applications. Most materials have their structural units extended in three dimensions and connected with chemical bonds. When the dimension is reduced, these bonds will be broken, decreasing the stability and making their experimental realization difficult. Here, we show that stable low-D materials can be made from naturally existing planar structural units. This is demonstrated by first-principles study of boron chalcogenides (B-X), which can have various low-D structures with attractive properties. For example, B₂O₃ can be the thinnest proton-exchange membrane for fuel cells. B-X are wide-gap semiconductors that can complement the narrow-gap 2D metal dichalcogenides for (opto)electronics. Our work sheds light on the stability of low-D materials and suggests guidelines for rational design of new materials.