Room-Temperature Solution-Processed NiOx:PbI2 Nanocomposite Structures for Realizing High-Performance Perovskite Photodetectors

Rational ligand design for enhanced carrier mobility in self-powered SWIR photodiodes based on colloidal InSb quantum dots

Solution-processed colloidal III-V semiconductor quantum dot photodiodes (QPDs) have potential applications in short-wavelength infrared (SWIR) imaging due to their tunable spectral response range, possible multiple-exciton generation, operation at 0-V bias voltage and low-cost fabrication and are also expected to replace lead- and mercury-based counterparts that are hampered by reliance on restricted elements (RoHS). However, the use of III-V CQDs as photoactive layers in SWIR optoelectronic applications is still a challenge because of underdeveloped ligand engineering for improving the in-plane conductivity of the QD assembled films. Here, we report on ligand engineering of InSb CQDs to enhance the optical response performance of self-powered SWIR QPDs. Specifically, by replacing the conventional ligand (i.e., oleylamine) with sulfide, the interparticle distance between the CQDs was shortened from 5.0 ± 0.5 nm to 1.5 ± 0.5 nm, leading to improved carrier mobility for high photoresponse speed to SWIR light. Furthermore, the use of sulfide ligands resulted in a low dark current density (∼nA cm-2) with an improved EQE of 18.5%, suggesting their potential use in toxic-based infrared image sensors.

Synergistic nucleation regulation using 4,4',4''-tris(carbazol-9-yl)-triphenylamine and moisture for stably air-processed high-performance perovskite photodetectors

Perovskite photodetectors (PPDs) offer a promising solution with low cost and high responsivity, addressing the limitations of traditional inorganic photodetectors. However, there is still room for improvement in terms of the dark current and stability of air-processed PPDs. In this study, 4,4',4''-tris(carbazol-9-yl)-triphenylamine (TCTA) was utilized as a nucleation agent to enhance the quality of perovskite films. The synergistic effect of TCTA and moisture promotes rapid nucleation of PbI2-PbCl2, resulting in an increased nucleation rate and the elimination of pinholes in the film. By employing additive engineering, we obtained a PbI2-PbCl2 layer with high coverage, leading to a low density of traps in the corresponding perovskite film. Consequently, the modified PPD exhibits a remarkable reduction in dark current density by over one order of magnitude, reaching 2.4 × 10-10 A cm-2 at -10 mV, along with a large linear dynamic range (LDR) of 183 dB. Furthermore, the resulting PPD demonstrates remarkable stability, retaining 90% of the initial external quantum efficiency (EQE) value even after continuous operation for over 3200 hours. Owing to a fast response time in the nanosecond range, the PPD could convert modulated light signals into electrical signals at a speed of 588 Kbit s-1, highlighting the great potential in the field of optical communication.

Advances in the Application of Perovskite Materials

Nowadays, the soar of photovoltaic performance of perovskite solar cells has set off a fever in the study of metal halide perovskite materials. The excellent optoelectronic properties and defect tolerance feature allow metal halide perovskite to be employed in a wide variety of applications. This article provides a holistic review over the current progress and future prospects of metal halide perovskite materials in representative promising applications, including traditional optoelectronic devices (solar cells, light-emitting diodes, photodetectors, lasers), and cutting-edge technologies in terms of neuromorphic devices (artificial synapses and memristors) and pressure-induced emission. This review highlights the fundamentals, the current progress and the remaining challenges for each application, aiming to provide a comprehensive overview of the development status and a navigation of future research for metal halide perovskite materials and devices.

Tunable Multiband Halide Perovskite Tandem Photodetectors with Switchable Response

Photodetectors with multiple spectral response bands have shown promise to improve imaging and communications through the switchable detection of different photon energies. However, demonstrations to date have been limited to only two bands and lack capability for fast switching in situ. Here, we exploit the band gap tunability and capability of all-perovskite tandem solar cells to demonstrate a new device concept realizing four spectral bands of response from a single multijunction device, with fast, optically controlled switching between the bands. The response to monochromatic light is highly selective and narrowband without the need for additional filters and switches to broader response bands on applying bias light. Sensitive photodetection above 6 × 10¹¹ Jones is demonstrated in all modes, with rapid switching response times of <250 ns. We demonstrate proof of principle on how the manipulation of the modular multiband detector response through light conditions enables diverse applications in optical communications with secure encryption.

High-Performance UV-Vis Broad-Spectra Photodetector Based on a β-Ga2O3/Au/MAPbBr3 Sandwich Structure

The UV-vis photodetector (PD), a detector that can simultaneously detect light in the ultraviolet region and the visible region, has a wide range of applications in military and civilian fields. Currently, it is very difficult to obtain good detection performance in the UV region (especially in the solar-blind range) like in the visible region with most UV-vis PDs. This severely affects the practical application of UV-vis broad-spectra PDs. Here, a simple sandwich structure PD (SSPD) composed of β-Ga₂O₃, Au electrodes, and the MAPbBr₃ perovskite is designed and fabricated to simultaneous enhance the detection performance in the UV and visible light regions. The β-Ga₂O₃/Au/MAPbBr₃ SSPD exhibits enhanced optoelectronic performance with high responsivities of 0.47 and 1.43 A W^-1 at 240 and 520 nm under a bias of 6 voltage (V), respectively, which are 8.5 and 23 times than that of the metal-semiconductor-metal (MSM) structure MAPbBr₃ PD at 6 V, respectively. The enhanced performance was attributed to the effective suppression of carrier recombination due to the efficient interface charge separation in the device structure. In addition, the self-powered response characteristic is also realized by forming a type-II heterojunction between β-Ga₂O₃ and MAPbBr₃, which gives the β-Ga₂O₃/Au/MAPbBr₃ SSPD superior single-pixel photo-imaging ability without an external power supply. This work provides a simple and effective method for the preparation of high-performance self-powered imaging PDs in the UV-visible region.

Elucidating the oxygen reduction reaction mechanism on the surfaces of 2D monolayer CsPbBr3 perovskite

The oxygen reduction reaction (ORR) is an indispensable reaction in electrochemical energy converting systems such as fuel cells.

Ultralow dark current in near-infrared perovskite photodiodes by reducing charge injection and interfacial charge generation

Metal halide perovskite photodiodes (PPDs) offer high responsivity and broad spectral sensitivity, making them attractive for low-cost visible and near-infrared sensing. A significant challenge in achieving high detectivity in PPDs is lowering the dark current density (J_D) and noise current (i_n). This is commonly accomplished using charge-blocking layers to reduce charge injection. By analyzing the temperature dependence of J_D for lead-tin based PPDs with different bandgaps and electron-blocking layers (EBL), we demonstrate that while EBLs eliminate electron injection, they facilitate undesired thermal charge generation at the EBL-perovskite interface. The interfacial energy offset between the EBL and the perovskite determines the magnitude and activation energy of J_D. By increasing this offset we realized a PPD with ultralow J_D and i_n of 5 × 10^-8 mA cm^-2 and 2 × 10^-14 A Hz^-1/2, respectively, and wavelength sensitivity up to 1050 nm, establishing a new design principle to maximize detectivity in perovskite photodiodes.

Perovskite photodetectors and their application in artificial photonic synapses

Organic-inorganic hybrid perovskites exhibit superior optoelectrical properties and have been widely used in photodetectors. Perovskite photodetectors with excellent detectivity have great potential for developing artificial photonic synapses which can merge data transmission and storage. They are highly desired for next generation neuromorphic computing. The recent progress of perovskite photodetectors and their application in artificial photonic synapses are summarized in this review. Firstly, the key performance parameters of photodetectors are briefly introduced. Secondly, the recent research progress of photodetectors including photoconductors, photodiodes, and phototransistors is summarized. Finally, the applications of perovskite photodetectors in artificial photonic synapses in recent years are highlighted. All these demonstrate the great potential of perovskite photonic synapses for the development of artificial intelligence.

Ultrasensitive Photodetectors Promoted by Interfacial Charge Transfer from Layered Perovskites to Chemical Vapor Deposition-Grown MoS2

Heterostructures for charge-carrier manipulation have laid the foundation of modern optoelectronic devices, such as photovoltaics and photodetectors. High-performance heterostructure devices usually impose stringent requirements on the material quality to sustain efficient carrier transport and charge transfer, thus leading to sophisticated fabrication processes. Here, a simple yet efficient strategy is proposed to develop ultrasensitive photodetectors based on heterostructures of chemical vapor deposition-grown MoS₂ and polycrystalline-layered perovskites. The layered perovskites possess pure crystallographic orientation with conductive edges in contact with MoS₂ , which gives rise to efficient light absorption, exciton diffusion, and interfacial charge transfer. In dark state, the mismatch of work functions of two materials facilitates low dark currents by the depletion of electrons in MoS₂ . Under light irradiation, efficient exciton diffusion and interfacial charge transfer are realized in the heterostructures with type-II band alignment, which produces drifting electrons in MoS₂ and leaves trapped holes in layered perovskites. The photodetectors present suppress noises and boost photocurrents, yielding a champion device with a responsivity of 2.5 × 10⁴  A W^-1 , and a specific detectivity of 4.1 × 10¹⁴  Jones. The results demonstrate a scalable approach for the integration of high-performance devices with high tolerance to defects.

Carrier Blocking Layer Materials and Application in Organic Photodetectors

As a promising candidate for next-generation photodetectors, organic photodetectors (OPDs) have gained increasing interest as they offer cost-effective fabrication methods using solution processes and a tunable spectral response range, making them particularly attractive for large area image sensors on lightweight flexible substrates. Carrier blocking layers engineering is very important to the high performance of OPDs that can select a certain charge carriers (holes or electrons) to be collected and suppress another carrier. Carrier blocking layers of OPDs play a critical role in reducing dark current, boosting their efficiency and long-time stability. This Review summarizes various materials for carrier blocking layers and some of the latest progress in OPDs. This provides the reader with guidelines to improve the OPD performance via carrier blocking layers engineering.

Self-powered broadband photodetector based on a solution-processed p-NiO/n-CdS:Al heterojunction

Solution-processed photodetectors have emerged as the next generation of sensing technology owing to their ease of integration with electron devices and of tuning photodetector performance. Currently, novel self-powered photodetectors without an external power source, for use in sensing, imaging and communication, are in high demand. Herein, we successfully developed a self-powered photodetector based on a novel solution-processed p-NiO/n-CdS:Al heterojunction, which shows an excellent current rectification characteristic ratio of up to three orders in the dark and distinctive photovoltaic behavior under light illumination. The complete solution synthesis route followed the development of CdS:Al thin films on ITO substrates by chemical bath deposition and NiO thin films by the sol-gel route. Optical absorption data revealed that NiO is more active in the UV region and CdS:Al has a majority of absorption in the visible region; so, upon light illumination, the effective separation of photogenerated carriers produces fast photodetection in the UV-visible region. The photoresponsivity values of the fabricated device were calculated to be 55 mA W^-1 and 30 mA W^-1 for UV and visible illumination, respectively. Also, the device has a fast rise and decay photoresponse speed at zero bias voltage, due to the self-driven photovoltaic effect which makes this heterojunction a self-powered device. This complete solution and new method of fabrication make it possible to combine different materials and flexible substrates, enhancing its potential applications in photodetectors, optoelectronic devices and sensors.

Polyhydroxy Ester Stabilized Perovskite for Low Noise and Large Linear Dynamic Range of Self-Powered Photodetectors

Solution-processed perovskites as emerging semiconductors have achieved unprecedented milestones in sensor optoelectric devices. Stability along with the device noise issues are the major obstacle for photodetectors to compete with the traditional devices. Here, we demonstrated that l-ascorbic acid (l-AA) as a polyhydroxy ester can coordinate with the amino group of formamidine cations (FA⁺) through multiple hydrogen bond interactions to stabilize the perovskite, which protect the FA⁺ ions from nucleophile attack and effectively suppress the degradation of FA⁺ ions, improving the perovskite stability and suppressing the device noise to below 0.3 pA Hz^-1/2 with a large linear dynamic range of 239 dB. The dual functions of l-AA enable the perovskite photodetector to have a high detectivity of 10¹² Jones. The self-powered device works with no energy consumption and maintains an undegraded performance over 1200 h of inspection at ambient conditions, which is promising for infrastructure construction, signal sensing, and real-time information delivery.

Highly efficient self-powered perovskite photodiode with an electron-blocking hole-transport NiOx layer

Hybrid organic-inorganic perovskite materials provide noteworthy compact systems that could offer ground-breaking architectures for dynamic operations and advanced engineering in high-performance energy-harvesting optoelectronic devices. Here, we demonstrate a highly effective self-powered perovskite-based photodiode with an electron-blocking hole-transport layer (NiOx). A high value of responsivity (R = 360 mA W-1) with good detectivity (D = 2.1 × 1011 Jones) and external quantum efficiency (EQE = 76.5%) is achieved due to the excellent interface quality and suppression of the dark current at zero bias voltage owing to the NiOx layer, providing outcomes one order of magnitude higher than values currently in the literature. Meanwhile, the value of R is progressively increased to 428 mA W-1 with D = 3.6 × 1011 Jones and EQE = 77% at a bias voltage of - 1.0 V. With a diode model, we also attained a high value of the built-in potential with the NiOx layer, which is a direct signature of the improvement of the charge-selecting characteristics of the NiOx layer. We also observed fast rise and decay times of approximately 0.9 and 1.8 ms, respectively, at zero bias voltage. Hence, these astonishing results based on the perovskite active layer together with the charge-selective NiOx layer provide a platform on which to realise high-performance self-powered photodiode as well as energy-harvesting devices in the field of optoelectronics.

Additive Modulated Perovskite Microstructures for High Performance Photodetectors

Organic-inorganic hybrid perovskites have been widely used as light sensitive components for high-efficient photodetectors due to their superior optoelectronic properties. However, the unwanted crystallographic defects of perovskites typically result in high dark current, and thus limit the performance of the device. Herein, we introduce a simple route of microstructures control in MAPbI₃ perovskites that associates with introducing an additive of 3,3,4,4-benzophenonetetracarboxylic dianhydridean (BPTCD) for crystallization adjustment of the perovskite film. The BPTCD additive can facilitate the formation of high-quality perovskite film with a compact and nearly pinhole-free morphology. Through characterizing the molecular interactions, it was found that the carbonyl groups in BPTCD is the key reason that promoted the nucleation and crystallization of MAPbI₃. As a result, we obtained high-efficient and stable perovskite photodetectors with low dark current of 9.98 × 10^-8 A at -0.5 V, an on/off ratio value of 10³, and a high detectivity exceeding 10¹² Jones over the visible region.

Broad-Band Photodetectors Based on Copper Indium Diselenide Quantum Dots in a Methylammonium Lead Iodide Perovskite Matrix

Low-temperature solution-processed methylammonium lead iodide (MAPbI₃) crystalline films have shown outstanding performance in optoelectronic devices. However, their high dark current and high noise equivalent power prevent their application in broad-band photodetectors. Here, we applied a facile solution-based antisolvent strategy to fabricate a hybrid structure of CuInSe₂ quantum dots (CISe QDs) embedded into a MAPbI₃ matrix, which not only enhances the photodetector responsivity, showing a large on/off ratio of 10⁴ at 2 V bias compared with the bare perovskite films, but also significantly (for over 7 days) improves the device stability, with hydrophobic ligands on the CuInSe₂ QDs acting as a barrier against the uptake of environmental moisture. MAPbI₃/CISe QD-based lateral photodetectors exhibit high responsivities of >0.5 A/W and 10.4 mA/W in the visible and near-infrared regions, respectively, partly because of the formation of a type II interface between the respective semiconductors but most significantly because of the efficient trap-state passivation of the perovskite grain surfaces, and the reduction in the twinning-induced trap density, which stems from both CISe QDs and their organic ligands. A large specific detectivity of 2.2 × 10¹² Jones at 525 nm illumination (1 μW/cm²), a fast fall time of 236 μs, and an extremely low noise equivalent power of 45 fW/Hz^1/2 have been achieved.

Flexible Inkjet-Printed Triple Cation Perovskite X-ray Detectors

Flexible direct conversion X-ray detectors enable a variety of novel applications in medicine, industry, and science. Hybrid organic-inorganic perovskite semiconductors containing elements of high atomic number combine an efficient X-ray absorption with excellent charge transport properties. Due to their additional cost-effective and low-temperature processability, perovskite semiconductors represent promising candidates to be used as active materials in flexible X-ray detectors. Inspired by the promising results recently reported on X-ray detectors that are based on either triple cation perovskites or inkjet-printed perovskite quantum dots, we here investigate flexible inkjet-printed triple cation perovskite X-ray detectors. The performance of the detectors is evaluated by the X-ray sensitivity, the dark current, and the X-ray stability. Exposed to 70 kVp X-ray radiation, reproducible and highly competitive X-ray sensitivities of up to 59.9 μC/(Gy_aircm²) at low operating voltages of 0.1 V are achieved. Furthermore, a significant dark current reduction is demonstrated in our detectors by replacing spin-coated poly(3,4-ethylenedioxythiophene)/poly(styrenesulfonate) (PEDOT:PSS) with sputtered NiO_x hole transport layers. Finally, stable operation of a flexible X-ray detector for a cumulative X-ray exposure of 4 Gy_air is presented, and the applicability of our devices as X-ray imaging detectors is shown. The results of this study represent a proof of concept toward flexible direct conversion X-ray detectors realized by cost-effective and high-throughput digital inkjet printing.

Materials for Interfaces in Organic Solar Cells and Photodetectors

Interface engineering is very important to the high performance of organic optoelectronic devices that are commonly composed of multilayer thin solid films. Interfacial materials are particularly crucial for interface engineering, and a variety of materials have been employed at the interface to accomplish various different functions. This Review summarizes various materials for the interfaces and some of the latest progress in organic solar cells (OSCs) and organic photodetectors (OPDs).

Microplasma-synthesized ultra-small NiO nanocrystals, a ubiquitous hole transport material

We report on a one-step hybrid atmospheric pressure plasma-liquid synthesis of ultra-small NiO nanocrystals (2 nm mean diameter), which exhibit strong quantum confinement. We show the versatility of the synthesis process and present the superior material characteristics of the nanocrystals (NCs). The band diagram of the NiO NCs, obtained experimentally, highlights ideal features for their implementation as a hole transport layer in a wide range of photovoltaic (PV) device architectures. As a proof of concept, we demonstrate the NiO NCs as a hole transport layer for three different PV device test architectures, which incorporate silicon quantum dots (Si-QDs), nitrogen-doped carbon quantum dots (N-CQDs) and perovskite as absorber layers. Our results clearly show ideal band alignment which could lead to improved carrier extraction into the metal contacts for all three solar cells. In addition, in the case of perovskite solar cells, the NiO NC hole transport layer acted as a protective layer preventing the degradation of halide perovskites from ambient moisture with a stable performance for >70 days. Our results also show unique characteristics that are highly suitable for future developments in all-inorganic 3^rd generation solar cells (e.g. based on quantum dots) where quantum confinement can be used effectively to tune the band diagram to fit the energy level alignment requirements of different solar cell architectures.

Achieving High-Quality Sn-Pb Perovskite Films on Complementary Metal-Oxide-Semiconductor-Compatible Metal/Silicon Substrates for Efficient Imaging Array

Although Sn-Pb perovskites sensing near-ultraviolet-visible-near-infrared light could be an attractive alternative to silicon in photodiodes and imaging, there have been no clear studies on such devices constructed on metal/silicon substrates, hindering their direct integration with complementary metal-oxide semiconductor (CMOS) and silicon electronics. Typically, high surface roughness and severe pinholes of Sn-rich binary perovskites make it difficult for them to fulfill the requirements of efficient photodiodes and imaging. These issues cause inherently high dark current and poor (dark and photo-) current uniformity. Herein, we propose and demonstrate the room-temperature crystallization in the Sn-rich binary perovskite system to effectively control film crystallization kinetics. With experimental and theoretical studies of the crystallization mechanism, we successfully tune the density and location of nanocrystals in precursor films to achieve compact nanocrystals, which coalesce into high-quality (smooth, dense, and pinhole-free) perovskites with intensified preferred orientation and decreased trap density. The high-quality perovskites reduce dark current and improve (dark and photo-) current uniformity of perovskite photodiodes on CMOS-compatible metal/silicon substrates. Meanwhile, self-powered devices achieve a high responsivity of 0.2 A/W at 940 nm, a large dynamic range of 100 dB, and a fast fall time of 2.27 μs, exceeding those of most silicon-based imaging sensors. Finally, a 6 × 6 pixel integrated photodiode array is successfully demonstrated to realize the imaging application. The work contributes to understanding the fundamentals of the crystallization of Sn-rich binary perovskites and advancing perovskite integration with Si-based electronics.

The ground exciton state of formamidinium lead bromide perovskite nanocrystals is a singlet dark state

Lead halide perovskites have emerged as promising new semiconductor materials for high-efficiency photovoltaics, light-emitting applications and quantum optical technologies. Their luminescence properties are governed by the formation and radiative recombination of bound electron-hole pairs known as excitons, whose bright or dark character of the ground state remains unknown and debated. While symmetry analysis predicts a singlet non-emissive ground exciton topped with a bright exciton triplet, it has been predicted that the Rashba effect may reverse the bright and dark level ordering. Here, we provide the direct spectroscopic signature of the dark exciton emission in the low-temperature photoluminescence of single formamidinium lead bromide perovskite nanocrystals under magnetic fields. The dark singlet is located several millielectronvolts below the bright triplet, in fair agreement with an estimation of the long-range electron-hole exchange interaction. Nevertheless, these perovskites display an intense luminescence because of an extremely reduced bright-to-dark phonon-assisted relaxation.

Oxygen-incorporated and layer-by-layer stacked WS2 nanosheets for broadband, self-driven and fast-response photodetection

Two-dimensional (2D) layered WS2 nanosheets have been regarded as exciting and emerging candidate materials in constructing high performance photodetectors. In this work, we develop a facile solvothermal method to synthesize oxygen-doped WS2 microrods composed of layer-by-layer stacked nanosheets. The WS2 microrods exhibit an obvious bandgap of 1.2 eV, together with a broad near-infrared (NIR) absorption after 1100 nm. The unique absorption can be ascribed to the oxygen-incorporation-induced localized surface plasmon resonance (LSPR) effect. A hybrid WS2/Si heterojunction, which allows the combination of the WS2 microrods with a mature silicon platform, is then constructed by a facile spin-coating fabrication process to investigate the photoresponse properties. Benefitting from the remarkable photovoltaic performance, the WS2/Si heterojunction acts as a self-driven photodetector with outstanding characteristics. The photodetector exhibits a decent responsivity (R) of 1.5 A W-1, a high specific detectivity (D*) of ∼2 × 1012 Jones, fast response speeds with rise/fall times of 2.0/7.2 μs, and good ambient stability (2 months) at zero bias. Notably, the photodetector is still sensitive at a broadband wavelength in the NIR region (1100-2000 nm). The broadband response is attributed to the LSPR effect of the oxygen-incorporated WS2. These results suggest great potential of the oxygen-incorporated WS2/Si heterojunctions in NIR light detection.

Perovskite Photovoltaics: The Significant Role of Ligands in Film Formation, Passivation, and Stability

Due to their outstanding optoelectronic properties, metal halide perovskites have been intensively studied in recent years. The latest certificated efficiency of 23.3% recently achieved in perovskite solar cells (PVSCs) enables them to be used as a very promising candidate for next-generation photovoltaics. The morphology, defect density, and water resistance of perovskite films have an enormous impact on the performance and stability of PVSCs. Ligands, with coordinating capability, have been widely developed to improve the quality and stability of perovskite materials significantly. In the first section of this review, the role of ligands in fabricating perovskite films by different methods (one-step, two-step, and postdeposition treatment) is discussed. In the second section, the progress on ligand-passivated perovskites via post-treatment, in situ passivation during perovskite formation, and modifying the substrates before perovskite formation is reviewed. In the third section, a discussion of ligand-stabilized perovskite films from the perspectives of crystal crosslinking, dimensionality engineering, and interfacial modification is presented. Finally, a summary and an outlook are given.

Reduced graphene oxide-induced crystallization of CuPc interfacial layer for high performance of perovskite photodetectors

TS-CuPc/rGO nanocomposite thin films were synthesized and applied as an interfacial layer for high-performance perovskite-based photodiodes.

High thermoelectric efficiency in monolayer PbI2 from 300 K to 900 K

By using a first-principles approach, monolayer PbI₂ is found to have great potential in thermoelectric applications.

Perovskite/Organic Bulk-Heterojunction Integrated Ultrasensitive Broadband Photodetectors with High Near-Infrared External Quantum Efficiency over 70

Ultraviolet-visible-near infrared (UV-Vis-NIR) broadband detection is important for image sensing, communication, and environmental monitoring, yet remains as a challenge in achieving high external quantum efficiency (EQE) in the broad spectrum range. Herein, sensitive broadband integrated photodetectors (PDs) with high EQE levels are reported. The organic bulk-heterojunction (OBHJ) layer, based on a NIR sensitive organic acceptor, is employed to extend the response spectrum of the perovskite PDs. A key strategy of introducing dual electron transport materials respectively for Vis and NIR regions into the active layer of integrated PDs is applied. Further combined with the proper energy level alignment and reasonable distribution of PC₆₁ BM in the active layer, the extraction and transport of photo induced charges in between perovskite and OBHJ is promoted efficiently. The integrated PD with the optimized structure exhibits an EQE mostly beyond 70% in the Vis-NIR region, which is the highest value among the ever reported solution-processable broadband PDs. The highest responsivity is 0.444 and 0.518 A W^-1 in the Vis and NIR region, respectively. The specific detectivity is beyond 10¹⁰ Jones in the range from 340 to 940 nm, enabling the device to detect weak signals in the UV to NIR broad region.

High-Performance Photodiode-Type Photodetectors Based on Polycrystalline Formamidinium Lead Iodide Perovskite Thin Films

Photodetectors based on three dimensional organic–inorganic lead halide perovskites have recently received significant attention. As a new type of light-harvesting materials, formamidinium lead iodide (FAPbI₃) is known to possess excellent optoelectronic properties even exceeding those of methylammonium lead iodide (MAPbI₃). To date, only a few photoconductor-type photodetectors based on FAPbI₃ single crystals and polycrystalline thin films in a lateral structure have been reported. Here, we demonstrate low-voltage, high-overall-performance photodiode-type photodetectors in a sandwiched geometry based on polycrystalline α-FAPbI₃ thin films synthesized by a one-step solution processing method and post-annealing treatment. The photodetectors exhibit a broadband response from the near-ultraviolet to the near-infrared (330–800 nm), achieving a high on/off current ratio of 8.6 × 10⁴ and fast response times of 7.2/19.5 μs. The devices yield a photoresponsivity of 0.95 AW⁻¹ and a high specific detectivity of 2.8 × 10¹² Jones with an external quantum efficiency (EQE) approaching 182% at −1.0 V under 650 nm illumination. The photodiode-type photodetectors based on polycrystalline α-FAPbI₃ thin films with superior performance consequently show great promise for future optoelectronic device applications.

Perovskite-based photodetectors: materials and devices

While the field of perovskite-based optoelectronics has mostly been dominated by photovoltaics, light-emitting diodes, and transistors, semiconducting properties peculiar to perovskites make them interesting candidates for innovative and disruptive applications in light signal detection. Perovskites combine effective light absorption in the broadband range with good photo-generation yield and high charge carrier mobility, a combination that provides promising potential for exploiting sensitive and fast photodetectors that are targeted for image sensing, optical communication, environmental monitoring or chemical/biological detection. Currently, organic-inorganic hybrid and all-inorganic halide perovskites with controlled morphologies of polycrystalline thin films, nano-particles/wires/sheets, and bulk single crystals have shown key figure-of-merit features in terms of their responsivity, detectivity, noise equivalent power, linear dynamic range, and response speed. The sensing region has been covered from ultraviolet-visible-near infrared (UV-Vis-NIR) to gamma photons based on two- or three-terminal device architectures. Diverse photoactive materials and devices with superior optoelectronic performances have stimulated attention from researchers in multidisciplinary areas. In this review, we provide a comprehensive overview of the recent progress of perovskite-based photodetectors focusing on versatile compositions, structures, and morphologies of constituent materials, and diverse device architectures toward the superior performance metrics. Combining the advantages of both organic semiconductors (facile solution processability) and inorganic semiconductors (high charge carrier mobility), perovskites are expected to replace commercial silicon for future photodetection applications.

Improving Uniformity and Reproducibility of Hybrid Perovskite Solar Cells via a Low-Temperature Vacuum Deposition Process for NiOx Hole Transport Layers

Recently, the trend in inverted hybrid perovskite solar cells (PVSCs) has been to utilize NiO_x as hole transport layers. However, the majority of reported solution-processed NiO_x films require a high-temperature thermal annealing process, which is unfavorable for large-scale manufacturing and suffers from lack of uniformity. We report, for the first time, e-beam evaporation as a low-temperature vacuum process for the deposition of NiO_x hole transport layers for PVSCs. Device characterization shows that efficiency is on par with solution-processed methods, the highest efficiency at 15.4% with no obvious hysteresis. Differences are found to be due to the presence of more Ni³⁺ in e-beam evaporated NiO_x, which are responsible for a lower transmittance but higher conductivity. Most importantly, e-beam-evaporated NiO_x-based PVSCs show greater uniformity and reproducibility compared to spin-coated NiO_x-based PVSCs. Finally, e-beam-evaporated NiO_x has the additional advantage of being produced by a low-temperature deposition process and applicable over large areas. This work, therefore, represents a significant step toward large-area PVSCs, where e-beam evaporation can be used for the low-temperature uniform deposition of charge-transport layers, such as NiO_x.

High-Performance, Self-Powered Photodetectors Based on Perovskite and Graphene

An ideal photodetector must exhibit a fast and wide tunable spectral response, be highly responsive, have low power consumption, and have a facile fabrication process. In this work, a self-powered photodetector with a graphene electrode and a perovskite photoactive layer is assembled for the first time. The graphene electrode is prepared using a solution transfer process, and the perovskite layer is prepared using a solution coating process, which makes the device low cost. Graphene can form a Schottky junction with TiO₂ to efficiently separate/transport photogenerated excitons at the graphene/perovskite interface. Unlike the conventional photovoltaic structure, in this photodetector, both photogenerated electrons and holes are transported along the same direction to graphene, and electrons tunneled into TiO₂ are collected by the cathode and holes transported by graphene are collected by the anode; therefore, the photodetector is self-powered. The photodetector has a broad range of detection, from 260 to 900 nm, an ultrahigh on-off ratio of 4 × 10⁶, rapid response to light on-off (<5 ms), and a high level of detection of ∼10¹¹ Jones. The high performance is primarily due to the unique charge-transport property of graphene and strong light absorption properties of perovskite. This work suggests a new method for the production of self-powered photodetectors with high performance and low power consumption on a large scale.

Robust and Recyclable Substrate Template with an Ultrathin Nanoporous Counter Electrode for Organic-Hole-Conductor-Free Monolithic Perovskite Solar Cells

A robust and recyclable monolithic substrate applying all-inorganic metal-oxide selective contact with a nanoporous (np) Au:NiO_x counter electrode is successfully demonstrated for efficient perovskite solar cells, of which the perovskite active layer is deposited in the final step for device fabrication. Through annealing of the Ni/Au bilayer, the nanoporous NiO/Au electrode is formed in virtue of interconnected Au network embedded in oxidized Ni. By optimizing the annealing parameters and tuning the mesoscopic layer thickness (mp-TiO₂ and mp-Al₂O₃), a decent power conversion efficiency (PCE) of 10.25% is delivered. With mp-TiO₂/mp-Al₂O₃/np-Au:NiO_x as a template, the original perovskite solar cell with 8.52% PCE can be rejuvenated by rinsing off the perovskite material with dimethylformamide and refilling with newly deposited perovskite. A renewed device using the recycled substrate once and twice, respectively, achieved a PCE of 8.17 and 7.72% that are comparable to original performance. This demonstrates that the novel device architecture is possible to recycle the expensive transparent conducting glass substrates together with all the electrode constituents. Deposition of stable multicomponent perovskite materials in the template also achieves an efficiency of 8.54%, which shows its versatility for various perovskite materials. The application of such a novel NiO/Au nanoporous electrode has promising potential for commercializing cost-effective, large scale, and robust perovskite solar cells.

Hybrid Organic-Inorganic Perovskite Photodetectors

Hybrid organic-inorganic perovskite materials garner enormous attention for a wide range of optoelectronic devices. Due to their attractive optical and electrical properties including high optical absorption coefficient, high carrier mobility, and long carrier diffusion length, perovskites have opened up a great opportunity for high performance photodetectors. This review aims to give a comprehensive summary of the significant results on perovskite-based photodetectors, focusing on the relationship among the perovskite structures, device configurations, and photodetecting performances. An introduction of recent progress in various perovskite structure-based photodetectors is provided. The emphasis is placed on the correlation between the perovskite structure and the device performance. Next, recent developments of bandgap-tunable perovskite and hybrid photodetectors built from perovskite heterostructures are highlighted. Then, effective approaches to enhance the stability of perovskite photodetector are presented, followed by the introduction of flexible and self-powered perovskite photodetectors. Finally, a summary of the previous results is given, and the major challenges that need to be addressed in the future are outlined. A comprehensive summary of the research status on perovskite photodetectors is hoped to push forward the development of this field.

Effects of Self-Assembled Monolayer Modification of Nickel Oxide Nanoparticles Layer on the Performance and Application of Inverted Perovskite Solar Cells

Entirely low-temperature solution-processed (≤100 °C) planar p-i-n perovskite solar cells (PSCs) offer great potential for commercialization of roll-to-roll fabricated photovoltaic devices. However, the stable inorganic hole-transporting layer (HTL) in PSCs is usually processed at high temperature (200-500 °C), which is far beyond the tolerant temperature (≤150 °C) of roll-to-roll fabrication. In this context, inorganic NiO_x nanoparticles (NPs) are an excellent candidate to serve as the HTL in PSCs, owing to their excellent solution processability at room temperature. However, the low-temperature processing condition is usually accompanied with defect formation, which deteriorates the film quality and device efficiency to a large extent. To suppress this setback, we used a series of benzoic acid selfassembled monolayers (SAMs) to passivate the surface defects of the NiO_x NPs and found that 4-bromobenzoic acid could effectively play the role of the surface passivation. This SAM layer reduces the trap-assisted recombination, minimizes the energy offset between the NiO_x NPs and perovskite, and changes the HTL surface wettability, thus enhancing the perovskite crystallization, resulting in more stable PSCs with enhanced power conversion efficiency (PCE) of 18.4 %, exceeding the control device PCE (15.5 %). Also, we incorporated the above-mentioned SAMs into flexible PSCs (F-PSCs) and achieved one of the highest PCE of 16.2 % on a polyethylene terephthalate (PET) substrate with a remarkable power-per-weight of 26.9 W g^-1 . This facile interfacial engineering method offers great potential for the large-scale manufacturing and commercialization of PSCs.

Symmetrization of the Crystal Lattice of MAPbI3 Boosts the Performance and Stability of Metal-Perovskite Photodiodes

Semiconducting lead triiodide perovskites (APbI₃ ) have shown remarkable performance in applications including photovoltaics and electroluminescence. Despite many theoretical possibilities for A⁺ in APbI₃ , the current experimental knowledge is largely limited to two of these materials: methylammonium (MA⁺ ) and formamidinium (FA⁺ ) lead triiodides, neither of which adopts the ideal, cubic perovskite structure at room temperature. Here, a volume-based criterion is proposed for cubic APbI₃ to be stable, and two perovskite materials MA_1-x EA_x PbI₃ (MEPI, EA⁺ = ethylammonium) and MA_1-y DMA_y PbI₃ (MDPI, DMA⁺ = dimethylammonium) are introduced. Powder and single-crystal X-ray diffraction (XRD) results reveal that MEPI and MDPI are solid solutions possessing the cubic perovskite structure, and the EA⁺ and DMA⁺ cations play similar roles in the symmetrization of the crystal lattice of MAPbI₃ . Single crystals of MEPI and MDPI are grown and made into plates of a range of thicknesses, and then into metal-perovskite photodiodes. These devices exhibit tripled diffusion lengths and about tenfold enhancement in stability against moisture, both relative to the current benchmark MAPbI₃ . In this study, the systematic approach to materials design and device fabrication greatly expands the candidate pool of perovskite semiconductors, and paves the way for high-performance, single-crystal perovskite devices including solar cells and light emitters.

Two-Dimensional Materials for Halide Perovskite-Based Optoelectronic Devices

Halide perovskites have high light absorption coefficients, long charge carrier diffusion lengths, intense photoluminescence, and slow rates of non-radiative charge recombination. Thus, they are attractive photoactive materials for developing high-performance optoelectronic devices. These devices are also cheap and easy to be fabricated. To realize the optimal performances of halide perovskite-based optoelectronic devices (HPODs), perovskite photoactive layers should work effectively with other functional materials such as electrodes, interfacial layers and encapsulating films. Conventional two-dimensional (2D) materials are promising candidates for this purpose because of their unique structures and/or interesting optoelectronic properties. Here, we comprehensively summarize the recent advancements in the applications of conventional 2D materials for halide perovskite-based photodetectors, solar cells and light-emitting diodes. The examples of these 2D materials are graphene and its derivatives, mono- and few-layer transition metal dichalcogenides (TMDs), graphdiyne and metal nanosheets, etc. The research related to 2D nanostructured perovskites and 2D Ruddlesden-Popper perovskites as efficient and stable photoactive layers is also outlined. The syntheses, functions and working mechanisms of relevant 2D materials are introduced, and the challenges to achieving practical applications of HPODs using 2D materials are also discussed.

Neutral and Charged Exciton Fine Structure in Single Lead Halide Perovskite Nanocrystals Revealed by Magneto-optical Spectroscopy

Revealing the crystal structure of lead halide perovskite nanocrystals is essential for the optimization of stability of these emerging materials in applications such as solar cells, photodetectors, and light-emitting devices. We use magneto-photoluminescence spectroscopy of individual perovskite CsPbBr₃ nanocrystals as a unique tool to determine their crystal structure, which imprints distinct signatures in the excitonic sublevels of charge complexes at low temperatures. At zero magnetic field, the identification of two classes of photoluminescence spectra, displaying either two or three sublevels in their exciton fine structure, shows evidence for the existence of two crystalline structures, namely tetragonal D_4h and orthorhombic D_2h phases. Magnetic field shifts, splitting, and coupling of the sublevels provide a determination of the diamagnetic coefficient and valuable information on the exciton g-factor and its anisotropic character. Moreover, this spectroscopic study reveals the optical properties of charged excitons and allows the extraction of the electron and hole g-factors for perovskite systems.

Efficient interface and bulk passivation of PbS quantum dot infrared photodetectors by PbI2 incorporation

A simple passivation method based on PbI₂ was developed, which can effectively suppress the heterojunction interface and PbS QD surface defects by interface and ligand passivation.