Electron-Hole Symmetry Breaking in Charge Transport in Nitrogen-Doped Graphene

Tunable terahertz absorption of ion gel-graphene hybrids based on the Salisbury effect

The gate-tunable absorption properties of graphene make it suitable for terahertz (THz) absorbers. However, the realization of a graphene-based THz absorber faces challenges between the difficulty of patterning graphene for processing and the intrinsically low absorbance of graphene with the high electric field needed to change the conductivity of graphene. This report presents an electrically tunable graphene THz absorber where a single-layer graphene film and a gold reflective layer are separated by a polyimide (PI) dielectric layer to form an easily fabricated three-layer Salisbury screen structure. The carrier density of the graphene layer can be efficiently tuned by a small external electrical gating (-5V-5 V) with the assistance of an ion gel layer. The voltage modulation of the Fermi energy level (EF) of graphene was confirmed by Raman spectra, and the variation of the device absorbance was confirmed using a THz time-domain spectroscopy system (THz-TDS). The measurements show that the EF is adjusted in the range of 0-0.5 eV, and THz absorbance is adjusted in the range of 60%-99%. The absorber performs well under different curvatures, and the peak absorbance is all over 95%. We conducted further analysis of the absorber absorbance by varying the thickness of the PI dielectric layer, aiming to examine the correlation between the resonant frequency of the absorber and the dielectric layer thickness. Our research findings indicate that the proposed absorber holds significant potential for application in diverse fields such as communication, medicine, and sensing.

Graphene FETs with high and low mobilities have universal temperature-dependent properties

We use phenomenological modelling and detailed experimental studies of charge carrier transport to investigate the dependence of the electrical resistivity,ρ, on gate voltage,V_g, for a series of monolayer graphene field effect transistors with mobilities,μ, ranging between 5000 and 250 000 cm²V^-1s^-1at low-temperature. Our measurements over a wide range of temperatures from 4 to 400 K can be fitted by the universal relationμ=4/eδnmaxfor all devices, whereρmaxis the resistivity maximum at the neutrality point andδnis an 'uncertainty' in the bipolar carrier density, given by the full width at half maximum of the resistivity peak expressed in terms of carrier density,n. This relation is consistent with thermal broadening of the carrier distribution and the presence of the disordered potential landscape consisting of so-called electron-hole puddles near the Dirac point. To demonstrate its utility, we combine this relation with temperature-dependent linearised Boltzmann transport calculations that include the effect of optical phonon scattering. This approach demonstrates the similarity in the temperature-dependent behaviour of carriers in different types of single layer graphene transistors with widely differing carrier mobilities. It can also account for the relative stability, over a wide temperature range, of the measured carrier mobility of each device.

Coexistence of Urbach-Tail-Like Localized States and Metallic Conduction Channels in Nitrogen-Doped 3D Curved Graphene

Nitrogen (N) doping is one of the most effective approaches to tailor the chemical and physical properties of graphene. By the interplay between N dopants and 3D curvature of graphene lattices, N-doped 3D graphene displays superior performance in electrocatalysis and solar-energy harvesting for energy and environmental applications. However, the electrical transport properties and the electronic states, which are the key factors to understand the origins of the N-doping effect in 3D graphene, are still missing. The electronic properties of N-doped 3D graphene are systematically investigated by an electric-double-layer transistor method. It is demonstrated that Urbach-tail-like localized states are located around the neutral point of N-doped 3D graphene with the background metallic transport channels. The dual nature of electronic states, generated by the synergistic effect of N dopants and 3D curvature of graphene, can be the electronic origin of the high electrocatalysis, enhanced molecular adsorption, and light absorption of N-doped 3D graphene.

Modulation of graphene THz absorption based on HAuCl4 doping method

Graphene is an attractive material for terahertz (THz) absorbers because of its tunable Fermi-Level (E_F). It has become a research hotspot to modulate the E_F of graphene and THz absorption of graphene. Here, a sandwich-structured single layer graphene (SLG)/ Polyimide (PI)/Au THz absorber was proposed, and top-layer graphene was doped by HAuCl₄ solutions. The E_F of graphene was shifted by HAuCl₄ doping, which was characterized by scanning electron microscope (SEM), X-ray photoelectron spectroscopy (XPS), and Raman tests. The results showed that the E_F is shifted about 0.42 eV under 100 mM HAuCl₄ doping, the sheet resistance is reduced from 1065 Ω/sq (undoped) to 375 Ω/sq (100 mM). The corresponding absorbance was increased from 40% to 80% at 0.65 THz and increased from 50% to 90% at 2.0 THz under 100 mM HAuCl₄ doping. Detailed studies showed that the absorption came from a sandwich structure that meets the impedance matching requirements and provided a thin resonant cavity to capture the incident THz waves. In addition, not only the absorber can be prepared simply, but its results in experiments and simulations agree as well. The proposed device can be applied to electromagnetic shielding and imaging, and the proposed method can be applied to prepare other graphene-based devices.

Characterization and Manipulation of Intervalley Scattering Induced by an Individual Monovacancy in Graphene

Intervalley scattering involves microscopic processes that electrons are scattered by atomic-scale defects on the nanoscale. Although central to our understanding of electronic properties of materials, direct characterization and manipulation of range and strength of the intervalley scattering induced by an individual atomic defect have so far been elusive. Using scanning tunneling microscope, we visualize and control intervalley scattering from an individual monovacancy in graphene. By directly imaging the affected range of monovacancy-induced intervalley scattering, we demonstrate that it is inversely proportional to the energy; i.e., it is proportional to the wavelength of massless Dirac fermions. A giant electron-hole asymmetry of the intervalley scattering is observed because the monovacancy is charged. By further charging the monovacancy, the bended electronic potential around the monovacancy softens the scattering potential, which, consequently, suppresses the intervalley scattering of the monovacancy.

High-Quality N-Doped Graphene with Controllable Nitrogen Bonding Configurations Derived from Ionic Liquids

Controllable nitrogen doping is an effective way to regulate the electronic properties of graphene and further to facilitate its wider application. However, the synthesis of high-quality nitrogen-doped graphene (NG) with a controllable nitrogen configuration still faces considerable challenges. In this work, we present for the first time a simple method for the one-step synthesis of NG with ionic liquids (ILs) as precursors, which avoids the defects introduced by secondary doping and simplifies the process. Using 1-Ethyl-3-methylimidazolium dicyanamide (EMIM-dca) as the precursor, we obtained a high-quality NG with few defects (I_D /I_G is 0.83), nitrogen content (4.11 at%), and graphite-N proportion of 92% at a growth temperature of 1000 °C and field effect transistors (FETs) fabricated on SiO₂ /Si substrates using the NG exhibited typical n-type semiconductor behavior in air. Our findings bring more inspiration for the controllable growth of high-quality graphitic N-doped graphene, thereby promoting its application possibilities in numerous fields.

Predoped Oxygenated Defects Activate Nitrogen-Doped Graphene for the Oxygen Reduction Reaction

The presence of defects and chemical dopants in metal-free carbon materials plays an important role in the electrocatalysis of the oxygen reduction reaction (ORR). The precise control and design of defects and dopants in carbon electrodes will allow the fundamental understanding of activity-structure correlations for tailoring catalytic performance of carbon-based, most particularly graphene-based, electrode materials. Herein, we adopted monolayer graphene – a model carbon-based electrode – for systematical introduction of nitrogen and oxygen dopants, together with vacancy defects, and studied their roles in catalyzing ORR. Compared to pristine graphene, nitrogen doping exhibited a limited effect on ORR activity. In contrast, nitrogen doping in graphene predoped with vacancy defects or oxygen enhanced the activities at 0.4 V vs the reversible hydrogen electrode (RHE) by 1.2 and 2.0 times, respectively. The optimal activity was achieved for nitrogen doping in graphene functionalized with oxygenated defects, 12.8 times more than nitrogen-doped and 7.7 times more than pristine graphene. More importantly, oxygenated defects are highly related to the 4e^– pathway instead of nitrogen dopants. This work indicates a non-negligible contribution of oxygen and especially oxygenated vacancy defects for the catalytic activity of nitrogen-doped graphene.

Nitrogen-doped nanoporous graphene induced by a multiple confinement strategy for membrane separation of rare earth

Rare earth separation is still a major challenge in membrane science. Nitrogen-doped nanoporous graphene (NDNG) is a promising material for membrane separation, but it has not yet been tested for rare earth separation, and it is limited by multi-complex synthesis. Herein, we developed a one-step, facile, and scalable approach to synthesize NDNG with tunable pore size and controlled nitrogen content using confinement combustion. Nanoporous hydrotalcite from Zn(NO₃)₂ is formed between layers of graphene oxide (GO) absorbed with phenylalanine via confinement growth, thus preparing the sandwich hydrotalcite/phenylalanine/GO composites. Subsequently, area-confinement combustion of hydrotalcite nanopores is used to etch graphene nanopores, and the hydrotalcite interlayer as a closed flat nanoreactor induces two-dimensional space confinement doping of planar nitrogen into graphene. The membrane prepared by NDNG achieves separation of Sc³⁺ from the other rare earth ions with excellent selectivity (∼3.7) through selective electrostatic interactions of pyrrolic-N, and separation selectivity of ∼1.7 for Tm³⁺/Sm³⁺.

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A multiple confinement strategy is constructed to achieve the synthesis of NDNG

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Planar nitrogen-doped NDNG with tunable pore size is obtained by one-step synthesis

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NDNG membrane presents excellent selectivity for rare earth in strong acidic media

Rich information on 2D materials revealed by optical second harmonic generation

Two-dimensional (2D) materials have brought a spectacular revolution in fundamental research and industrial applications due to their unique physical properties of atomically thin thickness, strong light-matter interaction, unity valley polarization and enhanced many-body interactions. To fully explore their exotic physical properties and facilitate potential applications in electronics and optoelectronics, an effective and versatile characterization method is highly demanded. Among the many methods of characterization, optical second harmonic generation (SHG) has attracted broad attention because of its sensitivity, versatility and simplicity. The SHG technique is sufficiently sensitive at the atomic scale and therefore suitable for studies on 2D materials. More importantly, it has the capacity to acquire abundant information ranging from crystallographic, and electronic, to magnetic properties in various 2D materials due to its sensitivity to both spatial-inversion symmetry and time-reversal symmetry. These advantages accompanied by its characteristics of non-invasion and high throughput make SHG a powerful tool for 2D materials. This review summarizes recent experimental developments of SHG applications in 2D materials and also provides an outlook of potential prospects based on SHG.

Strong pyrrolic-N-Pd interactions boost the electrocatalytic hydrodechlorination reaction on palladium nanoparticles

We demonstrated that heteroatomic nitrogen (N) doping of graphene can significantly enhance the performance of the graphene-palladium nanoparticle composite catalyst (N/G-Pd) in the electrocatalytic hydrodechlorination (EHDC) reaction. Specifically at -0.80 V (vs. Ag/AgCl), the N/G-430-Pd (prepared at 430 °C, pyridinic/pyrrolic-N-rich) and N/G-900-Pd (prepared at 900 °C, pyridinic/graphitic-N-rich) with equivalent total N content delivered the apparent rate constants (kobs) of 0.28 and 0.20 min-1 molPd-1 in removing 2,4-dichlorophenol, much higher than the 0.13 min-1 molPd-1 of the C-Pd. Additionally, we identified the determinant role of pyrrolic-N in boosting EHDC from the linear relationship between kobs-N and the pyrrolic-N content in the catalyst. Combined experimental and DFT analyses revealed that the positive effect of N doping originated from the strong N-Pd interactions, which modulated the Pd electronic structure and its interactions with the reactant and EHDC products (phenol and Cl-). The pyrrolic N-Pd bond was favorable as it could balance the reactant adsorption and the product desorption.

Nitrogen cluster doping for high-mobility/conductivity graphene films with millimeter-sized domains

Directly incorporating heteroatoms into the hexagonal lattice of graphene during growth has been widely used to tune its electrical properties with superior doping stability, uniformity, and scalability. However the introduction of scattering centers limits this technique because of reduced carrier mobilities and conductivities of the resulting material. Here, we demonstrate a rapid growth of graphitic nitrogen cluster-doped monolayer graphene single crystals on Cu foil with remarkable carrier mobility of 13,000 cm² V^-1 s^-1 and a greatly reduced sheet resistance of only 130 ohms square^-1. The exceedingly large carrier mobility with high n-doping level was realized by (i) incorporation of nitrogen-terminated carbon clusters to suppress the carrier scattering and (ii) elimination of all defective pyridinic nitrogen centers by oxygen etching. Our study opens up an avenue for the growth of high-mobility/conductivity doped graphene with tunable work functions for scalable graphene-based electronic and device applications.

Reversible Modification of Nitrogen-Doped Graphene Based on Se-N Dynamic Covalent Bonds for Field-Effect Transistors

Temperature-dependent modification is an effective way to reversibly tailor graphene's electronic properties. We present the reversible modification of a uniform monolayer nitrogen-doped graphene (NG) film by the formation and cleavage of temperature-dependent Se-N dynamic covalent bonds. The increasing binding energy in X-ray photoelectron spectroscopy (XPS) indicates that phenylselenyl bromine (PhSeBr) bonds with pyridinic N and pyrrolic N rather than graphitic N by accepting the lone pair of electrons. The temperature dependence of Raman spectra (the increasing D band and the shifts of the 2D band) and XPS spectra (Se 3d and N 1s) indicates that the Se-N dynamic covalent bond is gradually cleaved by treatment at increasing temperatures and is also recovered by the reversible modification. Field-effect transistors (FETs) based on Se-NG exhibit a temperature-dependent change from n-type to p-type conduction and tunable electron and hole mobilities owing to the reversible formation or cleavage of Se-N dynamic covalent bonds. This result opens up opportunities for reversibly controlling electrical properties of FETs by optimizing dynamic covalent bonds.

The Thermal, Electrical and ThermoelectricProperties of Graphene Nanomaterials

Graphene, as a typical two-dimensional nanometer material, has shown its unique application potential in electrical characteristics, thermal properties, and thermoelectric properties by virtue of its novel electronic structure. The field of traditional material modification mainly changes or enhances certain properties of materials by mixing a variety of materials (to form a heterostructure) and doping. For graphene as well, this paper specifically discusses the use of traditional modification methods to improve graphene’s electrical and thermoelectrical properties. More deeply, since graphene is an atomic-level thin film material, its shape and edge conformation (zigzag boundary and armchair boundary) have a great impact on performance. Therefore, this paper reviews the graphene modification field in recent years. Through the change in the shape of graphene, the change in the boundary structure configuration, the doping of other atoms, and the formation of a heterostructure, the electrical, thermal, and thermoelectric properties of graphene change, resulting in broader applications in more fields. Through studies of graphene’s electrical, thermal, and thermoelectric properties in recent years, progress has been made not only in experimental testing, but also in theoretical calculation. These aspects of graphene are reviewed in this paper.