Reducing Coercive-Field Scaling in Ferroelectric Thin Films via Orientation Control

Novel Route for Enhancing Piezoelectricity of Ferroelectric Films: Controlling Nontrivial Polarization States in Pb(Zr, Ti)O3 Monodomain Superlattice Structure

Artificial superlattice films made of Pb(Zr0.4Ti0.6)O3 and Pb(Zr0.6Ti0.4)O3 were investigated for their polarization states and piezoelectric properties theoretically and experimentally in this study. The developed theory predicts nontrivial polarization along neither [001] nor [111] directions in (111)-epitaxial monodomain superlattice films with uniform compressive strain. Such films were achieved via pulsed laser deposition. When the layer thickness is reduced to 3 nm, d33 becomes 128 ± 3.8 pm/V at 100 kV/cm and 71.3 ± 2.83 pm/V at 600 kV/cm, comparable to that of (111)-oriented Pb(Zr0.4Ti0.6)O3 or Pb(Zr0.6Ti0.4)O3 bulks and clearly exceeding that of the typical clamped films. The measurement agrees with the theoretical analysis, which reveals that the enhanced piezoelectricity is due to rotation of the nontrivial polarization. Furthermore, the theoretical study predicts an even larger d33 exceeding 300 pm/V for specific parameters in superlattice films with uniform tensile strain, which is promising for applications of microelectromechanical systems.

Programmable catalysis by support polarization: elucidating and breaking scaling relations

The Sabatier principle and the scaling relations have been widely used to search for and screen new catalysts in the field of catalysis. However, these powerful tools can also serve as limitations of catalyst control and breakthrough. To overcome this challenge, this work proposes an efficient method of studying catalyst control by support polarization from first-principles. The results demonstrate that the properties of catalysts are determined by support polarization, irrespective of the magnitude of spontaneous polarization of support. The approach enables elucidating the scaling relations between binding energies at various polarization values of support. Moreover, we observe the breakdown of scaling relations for the surface controlled by support polarization. By studying the surface electronic structure and decomposing the induced charge into contributions from different atoms and orbitals, we identify the inherent structural property of the interface that leads to the breaking of the scaling relations. Specifically, the displacements of the underlying oxide support impose its symmetry on the catalyst, causing the scaling relations between different adsorption sites to break.

Revealing the Polarizations of Molecular Ferroelectrics via SHG Polarimetry at the Nanoscale

Multifarious molecular ferroelectrics with multipolar axial characteristics have emerged in recent years, enriching the scenarios for energy harvesting, sensing, and information processing. The increased polar axes have enhanced the urgency of distinguishing different polarization states in material design, mechanism exploration, etc. However, conventional methods hardly meet the requirements of in situ, fast, microscale, contactless, and nondestructive features due to their inherent limitations. Herein, SHG polarimetry is introduced to probe the multioriented polarizations on a nanosized multiaxial molecular ferroelectric, i.e., TMCM-CdCl3 nanoplates, as an example. Combined with the analysis of the second-order susceptibility tensor, SHG polarimetry could serve as an effective method to detect the polarization orders and domain distributions of molecular ferroelectrics. Profiting from the full-optical feature, SHG polarimetry can even be performed on samples covered by transparent mediums, 2D materials, or thin metal electrodes. Our research might spark further fundamental studies and expand the application boundaries of next-generation ferroelectric materials.

Size-Induced Ferroelectricity in Antiferroelectric Oxide Membranes

Despite extensive studies on size effects in ferroelectrics, how structures and properties evolve in antiferroelectrics with reduced dimensions still remains elusive. Given the enormous potential of utilizing antiferroelectrics for high-energy-density storage applications, understanding their size effects will provide key information for optimizing device performances at small scales. Here, the fundamental intrinsic size dependence of antiferroelectricity in lead-free NaNbO₃ membranes is investigated. Via a wide range of experimental and theoretical approaches, an intriguing antiferroelectric-to-ferroelectric transition upon reducing membrane thickness is probed. This size effect leads to a ferroelectric single-phase below 40 nm, as well as a mixed-phase state with ferroelectric and antiferroelectric orders coexisting above this critical thickness. Furthermore, it is shown that the antiferroelectric and ferroelectric orders are electrically switchable. First-principle calculations further reveal that the observed transition is driven by the structural distortion arising from the membrane surface. This work provides direct experimental evidence for intrinsic size-driven scaling in antiferroelectrics and demonstrates enormous potential of utilizing size effects to drive emergent properties in environmentally benign lead-free oxides with the membrane platform.

Emergence of Rashba-/Dresselhaus effects in Ruddlesden-Popper halide perovskites with octahedral rotations

Ruddlesden-Popper halide perovskites are highly versatile quasi-two-dimensional energy materials with a wide range of tunable optoelectronic properties. Here we use the all-inorganic Csn+1Pb_nX3n+1Ruddlesden-Popper perovskites with X = I, Br, and Cl to systematically model the effect of octahedral tilting distortions on the energy landscape, band gaps, macroscopic polarization, and the emergence of Rashba-/Dresselhaus splitting in these materials. We construct all uniquen = 1 andn = 2 structures following from octahedral tilts and use first-principles density functional theory to calculate total energies, polarizations and band structures, backed up by band gap calculations using theGWapproach. Our results provide design rules for tailoring structural distortions and band-structure properties in all-inorganic Ruddlesden-Popper perovskites through the interplay of the amplitude, direction, and chemical character of the antiferrodistortive distortion modes contributing to each octahedral tilt pattern. Our work emphasizes that, in contrast to three-dimensional perovskites, polar structures may arise from a combination of octahedral tilts, and Rashba-/Dresselhaus splitting in this class of materials is determined by the direction and Pb-I orbital contribution of the polar distortion mode.

Enabling ultra-low-voltage switching in BaTiO3

Single crystals of BaTiO₃ exhibit small switching fields and energies, but thin-film performance is considerably worse, thus precluding their use in next-generation devices. Here, we demonstrate high-quality BaTiO₃ thin films with nearly bulk-like properties. Thickness scaling provides access to the coercive voltages (<100 mV) and fields (<10 kV cm^-1) required for future applications and results in a switching energy of <2 J cm^-3 (corresponding to <2 aJ per bit in a 10 × 10 × 10 nm³ device). While reduction in film thickness reduces coercive voltage, it does so at the expense of remanent polarization. Depolarization fields impact polar state stability in thicker films but fortunately suppress the coercive field, thus driving a deviation from Janovec-Kay-Dunn scaling and enabling a constant coercive field for films <150 nm in thickness. Switching studies reveal fast speeds (switching times of ~2 ns for 25-nm-thick films with 5-µm-diameter capacitors) and a pathway to subnanosecond switching. Finally, integration of BaTiO₃ thin films onto silicon substrates is shown. We also discuss what remains to be demonstrated to enable the use of these materials for next-generation devices.

Thin-Film Ferroelectrics

Over the last 30 years, the study of ferroelectric oxides has been revolutionized by the implementation of epitaxial-thin-film-based studies, which have driven many advances in the understanding of ferroelectric physics and the realization of novel polar structures and functionalities. New questions have motivated the development of advanced synthesis, characterization, and simulations of epitaxial thin films and, in turn, have provided new insights and applications across the micro-, meso-, and macroscopic length scales. This review traces the evolution of ferroelectric thin-film research through the early days developing understanding of the roles of size and strain on ferroelectrics to the present day, where such understanding is used to create complex hierarchical domain structures, novel polar topologies, and controlled chemical and defect profiles. The extension of epitaxial techniques, coupled with advances in high-throughput simulations, now stands to accelerate the discovery and study of new ferroelectric materials. Coming hand-in-hand with these new materials is new understanding and control of ferroelectric functionalities. Today, researchers are actively working to apply these lessons in a number of applications, including novel memory and logic architectures, as well as a host of energy conversion devices.

Outstanding Ferroelectricity in Sol-Gel-Derived Polycrystalline BiFeO3 Films within a Wide Thickness Range

As a promising lead-free ferroelectric, BiFeO₃ has a very large intrinsic polarization of ∼100 μC/cm², enabling its great potential in electronic applications especially in a film format. In this sense, reliable ferroelectric properties are desired; however, pure-phase BiFeO₃ films are notorious for their large leakage current, especially of those processed by using the sol-gel method─a facile and industrially scalable method for film preparation. In this study, a protection layer, which can be easily integrated in the sol-gel process, is used to ensure the acquirement of remnant polarization of ∼65 μC/cm² in ∼200 nm BiFeO₃ thin films, whereas O₂ annealing can enhance that to ∼120 μC/cm² in ∼400-700 nm films. Reliable ferroelectricity of BiFeO₃ films on Si wafers within a wide thickness range was thus achieved. The obtained ferroelectricity is among the best-achieved properties to date of BiFeO₃ films for both thin and intermediate thicknesses, including both chemically and physically derived. These results are helpful to advance potential use of sol-gel-processed BiFeO₃ films in electromechanical devices with different desired thicknesses.

Strain and orientation engineering in ABO3perovskite oxide thin films

Perovskite oxides with chemical formula ABO₃are widely studied for their properties including ferroelectricity, magnetism, strongly correlated physics, optical effects, and superconductivity. A thriving research direction using such materials is through their integration as epitaxial thin films, allowing many novel and exotic effects to be discovered. The integration of the thin film on a single crystal substrate, however, can produce unique and powerful effects, and can even induce phases in the thin film that are not stable in bulk. The substrate imposed mechanical boundary conditions such as strain, crystallographic orientation, octahedral rotation patterns, and symmetry can also affect the functional properties of perovskite films. Here, the author reviews the current state of the art in epitaxial strain and orientation engineering in perovskite oxide thin films. The paper begins by introducing the effect of uniform conventional biaxial strain, and then moves to describe how the substrate crystallographic orientation can induce symmetry changes in the film materials. Various material case studies, including ferroelectrics, magnetically ordered materials, and nonlinear optical oxides are covered. The connectivity of the oxygen octahedra between film and substrate depending on the strain level as well as the crystallographic orientation is then discussed. The review concludes with open questions and suggestions worthy of the community's focus in the future.

High-precision and linear weight updates by subnanosecond pulses in ferroelectric tunnel junction for neuro-inspired computing

The rapid development of neuro-inspired computing demands synaptic devices with ultrafast speed, low power consumption, and multiple non-volatile states, among other features. Here, a high-performance synaptic device is designed and established based on a Ag/PbZr_0.52Ti_0.48O₃ (PZT, (111)-oriented)/Nb:SrTiO₃ ferroelectric tunnel junction (FTJ). The advantages of (111)-oriented PZT (~1.2 nm) include its multiple ferroelectric switching dynamics, ultrafine ferroelectric domains, and small coercive voltage. The FTJ shows high-precision (256 states, 8 bits), reproducible (cycle-to-cycle variation, ~2.06%), linear (nonlinearity <1) and symmetric weight updates, with a good endurance of >10⁹ cycles and an ultralow write energy consumption. In particular, manipulations among 150 states are realized under subnanosecond (~630 ps) pulse voltages ≤5 V, and the fastest resistance switching at 300 ps for the FTJs is achieved by voltages <13 V. Based on the experimental performance, the convolutional neural network simulation achieves a high online learning accuracy of ~94.7% for recognizing fashion product images, close to the calculated result of ~95.6% by floating-point-based convolutional neural network software. Interestingly, the FTJ-based neural network is very robust to input image noise, showing potential for practical applications. This work represents an important improvement in FTJs towards building neuro-inspired computing systems.

Brain-inspired computing demands high-performance synapses. Here, the authors report a subnanosecond ferroelectric tunnel junction with 256 conductance states, 10⁹ endurance, and 5.3 fJ/bit energy consumption, satisfactory to build synaptic devices.

Genuinely Ferroelectric Sub-1-Volt-Switchable Nanodomains in Hf xZr(1- x)O2 Ultrathin Capacitors

The new class of fully silicon-compatible hafnia-based ferroelectrics with high switchable polarization and good endurance and thickness scalability shows a strong promise for new generations of logic and memory devices. Among other factors, their competitiveness depends on the power efficiency that requires reliable low-voltage operation. Here, we show genuine ferroelectric switching in Hf _xZr_{(1- x)}O₂ (HZO) layers in the application-relevant capacitor geometry, for driving signals as low as 800 mV and coercive voltage below 500 mV. Enhanced piezoresponse force microscopy with sub-picometer sensitivity allowed for probing individual polarization domains under the top electrode and performing a detailed analysis of hysteretic switching. The authentic local piezoelectric loops and domain wall movement under bias attest to the true ferroelectric nature of the detected nanodomains. The systematic analysis of local piezoresponse loop arrays reveals a totally unexpected thickness dependence of the coercive fields in HZO capacitors. The thickness decrease from 10 to 7 nm is associated with a remarkably strong decrease of the coercive field, with about 50% of the capacitor area switched at coercive voltages ≤0.5 V. Our explanation consistent with the experimental data involves a change of mechanism of nuclei-assisted switching when the thickness decreases below 10 nm. The practical implication of this effect is a robust ferroelectric switching under the millivolt-range driving signal, which is not expected for the standard coercive voltage scaling law. These results demonstrate a strong potential for further aggressive thickness reduction of HZO layers for low-power electronics.