Trap Passivation in Indium-Based Quantum Dots through Surface Fluorination: Mechanism and Applications

Near-Unity Photoluminescence Quantum Yield of Core-Only InP Quantum Dots via a Simple Postsynthetic InF3 Treatment

Indium phosphide (InP) quantum dots (QDs) are considered the most promising alternative for Cd and Pb-based QDs for lighting and display applications. However, while core-only QDs of CdSe and CdTe have been prepared with near-unity photoluminescence quantum yield (PLQY), this is not yet achieved for InP QDs. Treatments with HF have been used to boost the PLQY of InP core-only QDs up to 85%. However, HF etches the QDs, causing loss of material and broadening of the optical features. Here, we present a simple postsynthesis HF-free treatment that is based on passivating the surface of the InP QDs with InF3. For optimized conditions, this results in a PLQY as high as 93% and nearly monoexponential photoluminescence decay. Etching of the particle surface is entirely avoided if the treatment is performed under stringent acid-free conditions. We show that this treatment is applicable to InP QDs with various sizes and InP QDs obtained via different synthesis routes. The optical properties of the resulting core-only InP QDs are on par with InP/ZnSe/ZnS core-shell QDs, with significantly higher absorption coefficients in the blue, and with potential for faster charge transport. These are important advantages when considering InP QDs for use in micro-LEDs or photodetectors.

Near Infrared Light-Emitting Diodes Based on Colloidal InAs/ZnSe Core/Thick-Shell Quantum Dots

Heavy-metal-free III-V colloidal quantum dots (QDs) exhibit promising attributes for application in optoelectronics. Among them, InAs QDs are demonstrating excellent optical performance with respect to absorption and emission in the near-infrared spectral domain. Recently, InAs QDs attained a substantial improvement in photoluminescence quantum yield, achieving 70% at a wavelength of 900 nm through the strategic overgrowth of a thick ZnSe shell atop the InAs core. In the present study, light-emitting diodes (LEDs) based on this type of InAs/ZnSe QDs are fabricated, reaching an external quantum efficiency (EQE) of 13.3%, a turn-on voltage of 1.5V, and a maximum radiance of 12 Wsr-1m-2. Importantly, the LEDs exhibit an extensive emission dynamic range, characterized by a nearly linear correlation between emission intensity and current density, which can be attributed to the efficient passivation provided by the thick ZnSe shell. The obtained results are comparable to state-of-the-art PbS QD LEDs. Furthermore, it should be stressed not only that the fabricated LEDs are fully RoHS-compliant but also that the emitting InAs QDs are prepared via a synthetic route based on a non-pyrophoric, cheap, and commercially available as precursor, namely tris(dimethylamino)-arsine.

Inkjet printing of heavy-metal-free quantum dots-based devices: a review

Inkjet printing (IJP) has become a versatile, cost-effective technology for fabricating organic and hybrid electronic devices. Heavy-metal-based quantum dots (HM QDs) play a significant role in these inkjet-printed devices due to their excellent optoelectrical properties. Despite their utility, the intrinsic toxicity of HM QDs limits their applications in commercial products. To address this limitation, developing alternative HM-free quantum dots (HMF QDs) that have equivalent optoelectronic properties to HM QD is a promising approach to reduce toxicity and environmental impact. This article comprehensively reviews HMF QD-based devices fabricated using IJP methods. The discussion includes the basics of IJP technology, the formulation of printable HMF QD inks, and solutions to the coffee ring effect. Additionally, this review briefly explores the performance of typical state-of-the-art HMF QDs and cutting-edge characterization techniques for QD inks and printed QD films. The performance of printed devices based on HMF QDs is discussed and compared with those fabricated by other techniques. In the conclusion, the persisting challenges are identified, and perspectives on potential avenues for further progress in this rapidly developing research field are provided.

Surface Passivation toward Multiple Inherent Dangling Bonds in Indium Phosphide Quantum Dots

Indium phosphide (InP) quantum dots (QDs) have become the most recognized prospect to be less-toxic surrogates for Cd-based optoelectronic systems. Due to the particularly dangling bonds (DBs) and the undesirable oxides, the photoluminescence performance and stability of InP QDs remain to be improved. Previous investigations largely focus on eliminating P-DBs and resultant surface oxidation states; however, little attention has been paid to the adverse effects of the surface In-DBs on InP QDs. This work demonstrates a facile one-step surface peeling and passivation treatment method for both In- and P-DBs for InP QDs. Meanwhile, the surface treatment may also effectively support the encapsulation of the ZnSe shell. Finally, the generated InP/ZnSe QDs display a narrower full width at half-maximum (fwhm) of ∼48 nm, higher photoluminescence quantum yields (PLQYs) of ∼70%, and superior stability. This work enlarges the surface chemistry engineering consideration of InP QDs and considerably promotes the development of efficient and stable optoelectronic devices.

Pseudohalogen Ammonium Salt-Assisted Syntheses of Large-Sized Indium Phosphide Quantum Dots with Near-Infrared Photoluminescence

The development of indium phosphide (InP)-based quantum dots (QDs) with a near-infrared (NIR) emission area still lags behind the visible wavelength region and remains problematic. This study describes a one-step in situ pseudohalogen ammonium salt-assisted approach to generate NIR-emitted InP-based QDs with high photoluminescence quantum yields (PLQYs). The coexistence of NH4+ and PF6- ions from NH4PF6 may in situ synchronously etch and passivate the surface oxides and impede the creation of traps under the whole growth process of InP QDs. Experimental findings demonstrated that the in situ pseudohalogen ammonium salt-assisted syntheses technique may feature emission at a full width at half-maximum (fwhm) peak as fine as ∼45 nm and broaden the emission range to around ∼780 nm. A two-step approach for ZnS shells was developed to further improve the PLQY of NIR-emitted InP QDs. Furthermore, the constructed high-power intrinsically stretchable NIR color-conversion film employing the InP-based QDs/polymer composites presented excellent luminescence conversion ability and stretchability.

One-pot heat-up synthesis of short-wavelength infrared, colloidal InAs quantum dots

III-V colloidal quantum dots (QDs) promise Pb and Hg-free QD compositions with which to build short-wavelength infrared (SWIR) optoelectronic devices. However, their synthesis is limited by the availability of group-V precursors with controllable reactivities to prepare monodisperse, SWIR-absorbing III-V QDs. Here, we report a one-pot heat-up method to synthesize ∼8 nm edge length (∼6.5 nm in height) tetrahedral, SWIR-absorbing InAs QDs by increasing the [In3+]:[As3+] ratio introduced using commercially available InCl3 and AsCl3 precursors and by decreasing the concentration and optimizing the volume of the reducing reagent superhydride to control the concentration of In(0) and As(0) intermediates through QD nucleation and growth. InAs QDs are treated with NOBF4, and their deposited films are exchanged with Na2S to yield n-type InAs QD films. We realize the only colloidal InAs QD photoconductors with responsivity at the technologically important wavelength of 1.55 μm.

InSb/InP Core-Shell Colloidal Quantum Dots for Sensitive and Fast Short-Wave Infrared Photodetectors

Colloidal quantum dot (CQD) technology is considered the main contender toward a low-cost high-performance optoelectronic technology platform for applications in the short-wave infrared (SWIR) to enable 3D imaging, LIDAR night vision, etc. in the consumer electronics and automotive markets. In order to unleash the full potential of this technology, there is a need for a material that is environmentally friendly, thus RoHS compliant, and possesses adequate optoelectronic properties to deliver high-performance devices. InSb CQDs hold great potential in view of their RoHS-compliant nature and─in principle─facile access to the SWIR. However, to date progress in realizing high-performance optoelectronic devices, including photodetectors (PDs), has been limited. Here, we have developed a synthesis method for producing size-tunable InSb CQDs with distinct excitonic peaks spanning a wide range from 900 to 1750 nm. To passivate the surface defects and enhance the photoluminescence (PL) efficiency of InSb CQDs, we further designed an InSb/InP core-shell structure. By employing the InSb/InP core-shell CQDs in a photodiode device stack, we report on robust InSb CQD SWIR photodetectors that exhibit an external quantum efficiency (EQE) of 25% at 1240 nm, a wide linear dynamic range exceeding 128 dB, a photoresponse time of 70 ns, and a specific detectivity of 4.4 × 1011 jones.

Growth Control of InP/ZnSe Heterostructured Nanocrystals

The morphology of heterostructured semiconductor nanocrystals (h-NCs) dictates the spatial distribution of charge carriers and their recombination dynamics and/or transport, which are the main performance indicators of photonic applications utilizing h-NCs. The inability to control the morphology of heterovalent III-V/II-VI h-NCs composed of heavy-metal-free elements hinders their practical use. As a case study of III-V/II-VI h-NCs, the growth control of ZnSe epilayers on InP NCs is demonstrated here. The anisotropic morphology in InP/ZnSe h-NCs is attributed to the facet-dependent energy costs for the growth of ZnSe epilayers on different facets of InP NCs, and effective chemical means for controlling the growth rates of ZnSe on different surface planes are demonstrated. Ultimately, this article capitalizes on the controlled morphology of InP/ZnSe h-NCs to expand their photophysical characteristics from stable and pure emission to environment-sensitive one, which will facilitate their use in a variety of photonic applications.

Arresting Ion Migration from the ETL Increases Stability in Infrared Light Detectors Based on III-V Colloidal Quantum Dots

III-V colloidal quantum dots (CQDs) are of interest in infrared photodetection, and recent developments in CQDs synthesis and surface engineering have improved performance. Here this work investigates photodetector stability, finding that the diffusion of zinc ions from charge transport layers (CTLs) into the CQDs active layer increases trap density therein, leading to rapid and irreversible performance loss during operation. In an effort to prevent this, this work introduces organic blocking layers between the CQDs and ZnO layers; but these negatively impact device performance. The device is then, allowing to use a C60:BCP as top electron-transport layer (ETL) for good morphology and process compatibility, and selecting NiOX as the bottom hole-transport layer (HTL). The first round of NiOX -based devices show efficient light response but suffer from high leakage current and a low open-circuit voltage (Voc) due to pinholes. This work introduces poly[bis(4-phenyl) (2,4,6-trimethylphenyl)amine] (PTAA) with NiOX NC to form a hybrid HTL, an addition that reduces pinhole formation, interfacial trap density, and bimolecular recombination, enhancing carrier harvesting. The photodetectors achieve 53% external quantum efficiency (EQE) at 970 nm at 1 V applied bias, and they maintain 95% of initial performance after 19 h of continuous illuminated operation. The photodetectors retain over 80% of performance after 80 days of shelf storage.

Colloidal InSb Quantum Dots for 1500 nm SWIR Photodetector with Antioxidation of Surface

III-V quantum dots (QDs) have emerged as significant alternatives to Cd- and Pb-based QDs, garnering notable attention over the past two decades. However, the understanding of III-V QDs, particularly in the short wave-infrared (SWIR) region, remains limited. InAs QDs are widely recognized as the most prominent SWIR QDs, but their absorption beyond 1400 nm presents various challenges. Consequently, InSb QDs with relatively narrower bandgaps have been investigated; however, research on their device applications is lacking. In this study, InSb QDs are synthesized with absorption ranging from 1000 to 1700 nm by introducing Cl- ions to enhance QD surface stability during synthesis. Additionally, it coated InAs and ZnSe shells onto the InSb QDs to validate photoluminescence in the SWIR region and improve photostability. Subsequently, these QDs are employed in the fabrication of photodetector devices, resulting in photodetection above 1500 nm using Pb-free QDs. The photodetection device exhibited an external quantum efficiency (EQE) of 11.4% at 1370 nm and 6.3% at 1520 nm for InSb core QDs, and 4.6% at 1520 nm for InSb/InAs core/shell QDs, marking the successful implementation of such a device. In detail, the 1520 nm for InSb core device showed a dark current density(JD ) value of: 1.46 × 10-9 A/cm2 , responsivity(R): 0.078 A/W, and specific detectivity based on the shot noise(Dsh *): 3.6 × 1012 Jones at 0 V.

InAs Nanorod Colloidal Quantum Dots with Tunable Bandgaps Deep into the Short-Wave Infrared

InAs colloidal quantum dots (CQDs) have emerged as candidate lead- and mercury-free solution-processed semiconductors for infrared technology due to their appropriate bulk bandgap, which can be tuned by quantum confinement, and promising charge-carrier transport properties. However, the lack of suitable arsenic precursors and readily accessible synthesis conditions have limited InAs CQDs to smaller sizes (<7 nm), with bandgaps largely restricted to <1400 nm in the near-infrared spectral window. Conventional InAs CQD synthesis requires highly reactive, hazardous arsenic precursors, which are commercially scarce, making the synthesis hard to control and study. Here, we present a controlled synthesis strategy (using only readily available and less reactive precursors) to overcome the practical wavelength limitation of InAs CQDs, achieving monodisperse InAs nanorod CQDs with bandgaps tunable from ∼1200 to ∼1800 nm, thus crossing deep into the short-wave infrared (SWIR) region. By controlling the reactivity through in situ precursor complexation, we isolate the reaction mechanism, producing InAs nanorod CQDs that display narrow excitonic features and efficient carrier multiplication. Our work enables InAs CQDs for a wider range of SWIR applications.

Interface defects repair of core/shell quantum dots through halide ion penetration

The interface defects of core-shell colloidal quantum dots (QDs) affect their optoelectronic properties and charge transport characteristics. However, the limited available strategies pose challenges in the comprehensive control of these interface defects. Herein, we introduce a versatile strategy that effectively addresses both surface and interface defects in QDs through simple post-synthesis treatment. Through the combination of fine chemical etching methods and spectroscopic analysis, we have revealed that halogens can diffuse within the crystal structure at elevated temperatures, acting as "repairmen" to rectify oxidation and significantly reducing interface defects within the QDs. Under the guidance of this protocol, InP core/shell QDs were synthesized by a hydrofluoric acid-free method with a full width at half-maximum of 37.0 nm and an absolute quantum yield of 86%. To further underscore the generality of this strategy, we successfully applied it to CdSe core/shell QDs as well. These findings provide fundamental insights into interface defect engineering and contribute to the advancement of innovative solutions for semiconductor nanomaterials.

Tuning the Shades of Red Emission in InP/ZnSe/ZnS Nanocrystals with Narrow Full Width for Fabrication of Light-Emitting Diodes

While Cd-based luminescent nanocrystals (NCs) are the most mature NCs for fabricating efficient red light-emitting diodes (LEDs), their toxicity related limitation is inevitable, making it necessary to find a promising alternative. From this point of view, multishell-coated, red-emissive InP-based NCs are excellent luminescent nanomaterials for use as an emissive layer in electroluminescent (EL) devices. However, due to the presence of oxidation states, they suffer from a wide emission spectrum, which limits their performance. This study uses tris(dimethylamino)phosphine (3DMA-P) as a low-cost aminophosphine precursor and a double HF treatment to suggest an upscaled, cost-effective, and one-pot hot-injection synthesis of purely red-emissive InP-based NCs. The InP core structures were coated with thick layers of ZnSe and ZnS shells to prevent charge delocalization and to create a narrow size distribution. The purified NCs showed an intense emission signal as narrow as 43 nm across the entire red wavelength range (626-670 nm) with an emission quantum efficiency of 74% at 632 nm. The purified samples also showed an emission quantum efficiency of 60% for far-red wavelengths of 670 nm with a narrow full width of 50 nm. The samples showed a relatively long average emission lifetime of 50-70 ns with a biexponential decay profile. To demonstrate the practical ability of the prepared NCs in optoelectronics, we fabricated a red-emissive InP-based LEDs. The best-performing device showed an external quantum efficiency (EQE) of 1.16%, a luminance of 1039 cd m-2, and a current efficiency of 0.88 cd A-1.

Molecular surface programming of rectifying junctions between InAs colloidal quantum dot solids

Heavy-metal-free III-V colloidal quantum dots (CQDs) show promise in optoelectronics: Recent advancements in the synthesis of large-diameter indium arsenide (InAs) CQDs provide access to short-wave infrared (IR) wavelengths for three-dimensional ranging and imaging. In early studies, however, we were unable to achieve a rectifying photodiode using CQDs and molybdenum oxide/polymer hole transport layers, as the shallow valence bandedge (5.0 eV) was misaligned with the ionization potentials of the widely used transport layers. This occurred when increasing CQD diameter to decrease the bandgap below 1.1 eV. Here, we develop a rectifying junction among InAs CQD layers, where we use molecular surface modifiers to tune the energy levels of InAs CQDs electrostatically. Previously developed bifunctional dithiol ligands, established for II-VI and IV-VI CQDs, exhibit slow reaction kinetics with III-V surfaces, causing the exchange to fail. We study carboxylate and thiolate binding groups, united with electron-donating free end groups, that shift upward the valence bandedge of InAs CQDs, producing valence band energies as shallow as 4.8 eV. Photophysical studies combined with density functional theory show that carboxylate-based passivants participate in strong bidentate bridging with both In and As on the CQD surface. The tuned CQD layer incorporated into a photodiode structure achieves improved performance with EQE (external quantum efficiency) of 35% (>1 μm) and dark current density < 400 nA cm-2, a >25% increase in EQE and >90% reduced dark current density compared to the reference device. This work represents an advance over previous III-V CQD short-wavelength IR photodetectors (EQE < 5%, dark current > 10,000 nA cm-2).

Guilty as Charged: The Role of Undercoordinated Indium in Electron-Charged Indium Phosphide Quantum Dots

Quantum dots (QDs) are known for their size-dependent optical properties, narrow emission bands, and high photoluminescence quantum yield (PLQY), which make them interesting candidates for optoelectronic applications. In particular, InP QDs are receiving a lot of attention since they are less toxic than other QD materials and are hence suitable for consumer applications. Most of these applications, such as LEDs, photovoltaics, and lasing, involve charging QDs with electrons and/or holes. However, charging of QDs is not easy nor innocent, and the effect of charging on the composition and properties of InP QDs is not yet well understood. This work provides theoretical insight into electron charging of the InP core and InP/ZnSe QDs. Density functional theory calculations are used to show that charging of InP-based QDs with electrons leads to the formation of trap states if the QD contains In atoms that are undercoordinated and thus have less than four bonds to neighboring atoms. InP core-only QDs have such atoms at the surface, which are responsible for the formation of trap states upon charging with electrons. We show that InP/ZnSe core-shell models with all In atoms fully coordinated can be charged with electrons without the formation of trap states. These results show that undercoordinated In atoms should be avoided at all times for QDs to be stably charged with electrons.

Mapping the Identity of Transition Metal Doping and Surface Passivation in Indium Phosphide with Theoretical Calculation

Understanding the electronic structure of doped InP quantum dots (QDs) is essential to optimize the material for specific optoelectronic applications. However, current synthesis approaches are often tedious and unfavorable for rational tunning. Herein, a combination of experimental and computational studies was conducted to address the doping mechanism and surface passivation of InP QDs. The successful dopant introduction requires low Cu doping concentration and heavy Mn doping, while the Ag doping amount is relatively moderate. This may correspond to the theoretical doping formation energy presented as Cu (-2.52 eV) < Ag (-1.76 eV) < Mn (-0.38 eV). As for surface passivation, inorganic ions and shell-like ZnS are unraveled through simulational investigation. Chloride ion promotes oriented growth toward tetrahedron morphology while nitrate-passivated InP QDs exhibit blurry transmission electron microscope (TEM) morphology. Correspondingly, the binding energy of chloride ion with (111) facet is -2.13 eV significantly lower than those of (110) and (100) facets. Further, the additional Zn 3d bands are more involved in the formation of conduction band, which optimized the Mn-doped InP with a 0.32 eV bandgap. These experimental and model results provide more microscopic details of doped InP, which can motivate theoretically exact control of guest ion stoichiometry with optimized characteristics for electrical devices.

Boosting the Photoluminescence Efficiency of InAs Nanocrystals Synthesized with Aminoarsine via a ZnSe Thick-Shell Overgrowth

InAs-based nanocrystals can enable restriction of hazardous substances (RoHS) compliant optoelectronic devices, but their photoluminescence efficiency needs improvement. We report an optimized synthesis of InAs@ZnSe core@shell nanocrystals allowing to tune the ZnSe shell thickness up to seven mono-layers (ML) and to boost the emission, reaching a quantum yield of ≈70% at ≈900 nm. It is demonstrated that a high quantum yield can be attained when the shell thickness is at least ≈3ML. Notably, the photoluminescence lifetimeshows only a minor variation as a function of shell thickness, whereas the Auger recombination time (a limiting aspect in technological applications when fast) slows down from 11 to 38 ps when increasing the shell thickness from 1.5 to 7MLs. Chemical and structural analyses evidence that InAs@ZnSe nanocrystals do not exhibit any strain at the core-shell interface, likely due to the formation of an InZnSe interlayer. This is supported by atomistic modeling, which indicates the interlayer as being composed of In, Zn, Se and cation vacancies, alike to the In2 ZnSe4 crystal structure. The simulations reveal an electronic structure consistent with that of type-I heterostructures, in which localized trap states can be passivated by a thick shell (>3ML) and excitons are confined in the core.

Efficient Photoelectrochemical Hydrogen Generation Using Eco-Friendly "Giant" InP/ZnSe Core/Shell Quantum Dots

InP quantum dots (QDs) are promising building blocks for use in solar technologies because of their low intrinsic toxicity, narrow bandgap, large absorption coefficient, and low-cost solution synthesis. However, the high surface trap density of InP QDs reduces their energy conversion efficiency and degrades their long-term stability. Encapsulating InP QDs into a wider bandgap shell is desirable to eliminate surface traps and improve optoelectronic properties. Here, we report the synthesis of "giant" InP/ZnSe core/shell QDs with tunable ZnSe shell thickness to investigate the effect of the shell thickness on the optoelectronic properties and the photoelectrochemical (PEC) performance for hydrogen generation. The optical results demonstrate that ZnSe shell growth (0.9-2.8 nm) facilitates the delocalization of electrons and holes into the shell region. The ZnSe shell simultaneously acts as a passivation layer to protect the surface of InP QDs and as a spatial tunneling barrier to extract photoexcited electrons and holes. Thus, engineering the ZnSe shell thickness is crucial for the photoexcited electrons and hole transfer dynamics to tune the optoelectronic properties of "giant" InP/ZnSe core/shell QDs. We obtained an outstanding photocurrent density of 6.2 mA cm^-1 for an optimal ZnSe shell thickness of 1.6 nm, which is 288% higher than the values achieved from bare InP QD-based PEC cells. Understanding the effect of shell thickness on surface passivation and carrier dynamics offers fundamental insights into the suitable design and realization of eco-friendly InP-based "giant" core/shell QDs toward improving device performance.

InP quantum dots: Stoichiometry regulates carrier dynamics

The optical properties of non-toxic indium phosphide (InP) quantum dots (QDs) are impinged by the existence of characteristic deep trap states. Several surface engineering strategies have been adopted to improve their optical quality, which has promoted the use of InP QDs for various technological applications. An antithetical approach involves the effective utilization of the deep trap states in InP QDs to modulate back electron transfer rates. Here, we explore the influence of the core-size of InP on their In-to-P stoichiometry and charge transfer dynamics when bound to an acceptor molecule, decyl viologen (DV2+). The mechanism of interaction of InP and DV2+ based on the quenching sphere model established the presence of (i) a 1:1 complex of DV2+ bound on InP and (ii) immobile quenchers in the quenching sphere, depending on the concentration of DV2+. While the forward electron transfer rates from photoexcited InP to bound DV2+ does not substantially vary with an increase in core size, the back electron transfer rates are found to be retarded. Findings from inductively coupled plasma-optical emission spectroscopy (ICP-OES) and X-ray photoelectron spectroscopy (XPS) reveal that the In to P ratio is higher for QDs with larger core size, which further brings about increased carrier trapping and a decreased rate of charge recombination. Furthermore, long-lived charge-separated states in DV2+ bound to InP, extending to hundreds of milliseconds, are obtained by varying the number of DV2+ in the quenching sphere of the QDs.

Single-Particle Dynamics of ZnS Shelling Induced Replenishment of Carrier Diffusion for Individual Emission Centers in CuInS2 Quantum Dots

Insights into blinking and photoactivation of aqueous copper indium sulfide (CIS) quantum dots have been obtained using fluorescence correlation spectroscopy (FCS) and fluorescence lifetime correlation spectroscopy (FLCS). An unusual excitation wavelength-dependence of photoactivation/photocorrosion is manifested in an increase in the initial correlation amplitude G(0) for λ_ex = 532 nm, but a decrease for λ_ex = 405 nm. This has been rationalized in terms of different contributions from surface-assisted recombination in the two cases. Blinking times obtained from the autocorrelation functions (ACFs) of the 100-200 ns lifetime component (core Cu-mediated recombination) are almost unaffected by shelling, but those from the ACF for the 10-30 ns lifetime (surface states) increase significantly. Absence of cross-correlation between the two recombinative states of bare CIS QDs and the emergence of an anticorrelation with the introduction of the ZnS shell are observed, indicating the diffusive nature of the two states for CIS-ZnS. The diffusion is inhibited in bare CIS QDs due to the preponderance of surface states.

Ultrasensitive Near-Infrared InAs Colloidal Quantum Dot-ZnON Hybrid Phototransistor Based on a Gradated Band Structure

Amorphous metal oxide semiconductor phototransistors (MOTPs) integrated with colloidal quantum dots (QDs) (QD-MOTPs) are promising infrared photodetectors owing to their high photoconductive gain, low off-current level, and high compatibility with pixel circuits. However, to date, the poor mobility of conventional MOTPs, such as indium gallium zinc oxide (IGZO), and the toxicity of lead (Pb)-based QDs, such as lead sulfide and lead selenide, has limited the commercial applications of QD-MOTPs. Herein, an ultrasensitive QD-MOTP fabricated by integrating a high-mobility zinc oxynitride (ZnON)-based MOTP and lead-free indium arsenide (InAs) QDs is demonstrated. A new gradated bandgap structure is introduced in the InAs QD layer that absorbs infrared light, which prevents carriers from moving backward and effectively reduces electron-hole recombination. Chemical, optical, and structural analyses confirm the movement of the photoexcited carriers in the graded band structure. The novel QD-MOTP exhibits an outstanding performance with a responsivity of 1.15 × 10⁵ A W^-1 and detectivity of 5.32 × 10¹⁶ Jones at a light power density of 2 µW cm^-2 under illumination at 905 nm.

Deep Blue and Highly Emissive ZnS-Passivated InP QDs: Facile Synthesis, Characterization, and Deciphering of Their Ultrafast-to-Slow Photodynamics

InP-based quantum dots (QDs) are an environment-friendly alternative to their heavy metal-ion-based counterparts. Herein we report a simple procedure for synthesizing blue emissive InP QDs using oleic acid and oleylamine as surface ligands, yielding ultrasmall QDs with average sizes of 1.74 and 1.81 nm, respectively. Consecutive thin coating with ZnS increased the size of these QDs to 4.11 and 4.15 nm, respectively, alongside a significant enhancement of their emission intensities centered at ∼410 nm and ∼430 nm, respectively. Pure phase synthesis of these deep-blue emissive QDs is confirmed by powder X-ray diffraction (PXRD), X-ray photoelectron spectroscopy (XPS), and transmission electron microscopy (TEM). Armed with femtosecond to millisecond time-resolved spectroscopic techniques, we decipher the energy pathways, reflecting the effect of successive ZnS passivation on the charge carrier (electrons and holes) dynamics in the deep-blue emissive InP, InP/ZnS, and InP/ZnS/ZnS QDs. Successive coating of the InP QDs increases the intraband relaxation times from 200 to 700 fs and the lifetime of the hot electrons from 2 to 8 ps. The lifetime of the cold holes also increase from 1 to 4 ps, and remarkably, the Auger recombination escalates from 15 to 165 ps. The coating also drastically decreases the quenching by the molecular oxygen of the trapped charge carriers at the surfaces of the QDs. Our results provide clues to push further the emission of InP QDs into more energetically spectral regions and to increase the fluorescence quantum yield, targeting the construction of efficient UV-emissive light-emitting devices (LEDs).

Study of the Interfacial Oxidation of InP Quantum Dots Synthesized from Tris(dimethylamino)phosphine

InP quantum dots (QDs) are the most competitive in terms of environmentally friendly QDs. However, the synthesis of InP QDs requires breakthroughs in low-cost and safe phosphorus precursors such as tri(dimethylamino)phosphine [(DMA)₃P]. It is found that even if the oxygen is completely avoided, there are still oxidation state defects at the core/shell interface of InP QDs. Herein, the record-breaking (DMA)₃P-based red InP QDs were synthesized with the assist of HF processing to eliminate the InPO_x defect and improve the fluorescence efficiency. The maximum photoluminescence quantum yield was 97.7%, which is the highest of the red InP QDs synthesized by the aminophosphine. The external quantum efficiency and brightness of the QD light-emitting diode device are also improved accordingly from 0.6% and 1276 cd·m^-2 to 3.5% and 2355 cd·m^-2, respectively.

Heteroepitaxial chemistry of zinc chalcogenides on InP nanocrystals for defect-free interfaces with atomic uniformity

Heteroepitaxy on colloidal semiconductor nanocrystals is an essential strategy for manipulating their optoelectronic functionalities. However, their practical synthesis typically leads to scattered and unexpected outcomes due to the intervention of multiple reaction pathways associated with complicated side products of reactants. Here, the heteroepitaxy mechanism of zinc chalcogenide initiated on indium phosphide (InP) colloidal nanocrystals is elucidated using the precursors, zinc carboxylate and trialkylphosphine selenide. The high magnetic receptivity of ⁷⁷Se and the characteristic longitudinal optical phonon mode of ZnSe allowed for monitoring the sequence of epilayer formation at the molecular level. The investigation revealed the sterically hindered acyloxytrialkylphosphonium and diacyloxytrialkylphosphorane to be main intermediates in the surface reaction, which retards the metal ion adsorption by a large steric hindrance. The transformation of adsorbates to the crystalline epilayer was disturbed by surface oxides. Raman scattering disclosed the pathway of secondary surface oxidation triggered by carboxylate ligands migrated from zinc carboxylate. The surface-initiated heteroepitaxy protocol is proposed to fabricate core/shell heterostructured nanocrystals with atomic-scale uniformity of epilayers. Despite the large lattice mismatch of ZnS to InP, we realised a uniform and interface defect-free ZnS epilayer (~0.3 nm thickness) on InP nanocrystals, as evidenced by a high photoluminescence quantum yield of 97.3%.

Indium arsenide quantum dots: an alternative to lead-based infrared emitting nanomaterials

Colloidal quantum dots (QDs) emitting in the infrared (IR) are promising building blocks for numerous photonic, optoelectronic and biomedical applications owing to their low-cost solution-processability and tunable emission. Among them, lead- and mercury-based QDs are currently the most developed materials. Yet, due to toxicity issues, the scientific community is focusing on safer alternatives. In this regard, indium arsenide (InAs) QDs are one of the best candidates as they can absorb and emit light in the whole near infrared spectral range and they are RoHS-compliant, with recent trends suggesting that there is a renewed interest in this class of materials. This review focuses on colloidal InAs QDs and aims to provide an up-to-date overview spanning from their synthesis and surface chemistry to post-synthesis modifications. We provide a comprehensive overview from initial synthetic methods to the most recent developments on the ability to control the size, size distribution, electronic properties and carrier dynamics. Then, we describe doping and alloying strategies applied to InAs QDs as well as InAs based heterostructures. Furthermore, we present the state-of-the-art applications of InAs QDs, with a particular focus on bioimaging and field effect transistors. Finally, we discuss open challenges and future perspectives.

A Water-Free In Situ HF Treatment for Ultrabright InP Quantum Dots

Indium phosphide quantum dots are the main alternative for toxic and restricted Cd-based quantum dots for lighting and display applications, but in the absence of protecting ZnSe and/or ZnS shells, InP quantum dots suffer from low photoluminescence quantum yields. Traditionally, HF treatments have been used to improve the quantum yield of InP to ∼50%, but these treatments are dangerous and not well understood. Here, we develop a postsynthetic treatment that forms HF in situ from benzoyl fluoride, which can be used to strongly increase the quantum yield of InP core-only quantum dots. This treatment is water-free and can be performed safely. Simultaneous addition of the z-type ligand ZnCl₂ increases the photoluminescence quantum yield up to 85%. Structural analysis via XPS as well as solid state and solution NMR measurements shows that the in situ generated HF leads to a surface passivation by indium fluoride z-type ligands and removes polyphosphates, but not PO₃ and PO₄ species from the InP surface. With DFT calculations it is shown that InP QDs can be trap-free even when PO₃ and PO₄ species are present on the surface. These results show that both polyphosphate removal and z-type passivation are necessary to obtain high quantum yields in InP core-only quantum dots. They further show that core-only InP QDs can achieve photoluminescence quantum yields rivalling those of InP/ZnSe/ZnS core/shell/shell QDs and the best core-only II-VI QDs.

A biomimetic ocular prosthesis system: emulating autonomic pupil and corneal reflections

The human light modulation response allows humans to perceive objects clearly by receiving the appropriate amount of light from the environment. This paper proposes a biomimetic ocular prosthesis system that mimics the human light modulation response capable of pupil and corneal reflections. First, photoinduced synaptic properties of the quantum dot embedded photonic synapse and its biosimilar signal transmission is confirmed. Subsequently, the pupillary light reflex is emulated by incorporating the quantum dot embedded photonic synapse, electrochromic device, and CMOS components. Moreover, a solenoid-based eyelid is connected to the pupillary light reflex system to emulate the corneal reflex. The proposed ocular prosthesis system represents a platform for biomimetic prosthesis that can accommodate an appropriate amount of stimulus by self-regulating the intensity of external stimuli.

Ligand Effect in 1-Octanethiol Passivation of InP/ZnSe/ZnS Quantum Dots-Evidence of Incomplete Surface Passivation during Synthesis

The lack of anionic carboxylate ligands on the surface of InP/ZnSe/ZnS quantum dots (QDs), where zinc carboxylate ligands can be converted to carboxylic acid or carboxylate ligands via proton transfer by 1-octanethiol, is demonstrated. The as-synthesized QDs initially have an under-coordinated vacancy surface, which is passivated by solvent ligands such as ethanol and acetone. Upon exposure of 1-octanethiol to the QD surface, 1-octanethiol effectively induces the surface binding of anionic carboxylate ligands (derived from zinc carboxylate ligands) by proton transfer, which consequently exchanges ethanol and acetone ligands that bind on the incomplete QD surface. These systematic chemical analyses, such as thermogravimetric analysis-mass spectrometry and proton nuclear magnetic resonance spectroscopy, directly show the interplay of surface ligands, and it associates with QD light-emitting diodes (QD-LEDs). It is believed that this better understanding can lead to industrially feasible QD-LEDs.

Green InP-based quantum dots and electroluminescent light-emitting diodes

With the advancement toward commercialization of quantum dots (QDs) in the field of lighting and display, improving the performance of Cd-free QDs and related quantum dot light-emitting diodes (QLEDs) becomes necessary. Thus far, the performance of ZnTeSe- and InP-based blue and red QLEDs has been significantly improved by optimizing QDs emitting materials and device structure. However, as one of the three primary color sources, the performance of green InP-based QLEDs still lags behind that of blue and red Cd-free QLEDs. Herein, this review discusses the latest progress of green InP-based emitting materials and corresponding QLEDs, covering the engineering of InP core, the optimization of nanostructure and surface ligands of core/shell QDs, as well as the majorization of device architecture and carrier transport materials. Finally, some challenges and possible development directions of green InP-based QDs and related QLEDs are also identified, which may speed up the commercialization process of Cd-free QDs and corresponding QLEDs.

Quasi-Shell-Growth Strategy Achieves Stable and Efficient Green InP Quantum Dot Light-Emitting Diodes

Indium phosphide (InP) based quantum dots (QDs) have been known as an ideal alternative to heavy metals including QDs light emitters, such as cadmium selenium (CdSe) QDs, and show great promise in the next-generation solid-state lighting and displays. However, the electroluminescence performance of green InP QDs is still inferior to their red counterparts, due to the higher density of surface defects and the wider particle size distribution. Here, a quasi-shell-growth strategy for the growth of highly luminescent green InP/ZnSe/ZnS QDs is reported, in which the zinc and selenium monomers are added at the initial nucleation of InP stage to adsorb on the surface of InP cores that create a quasi-ZnSe shell rather than a bulk ZnSe shell. The quasi-ZnSe shell reduces the surface defects of InP core by passivating In-terminated vacancies, and suppresses the Ostwald ripening of InP core at high temperatures, leading to a photoluminescence quantum yield of 91% with a narrow emission linewidth of 36 nm for the synthesized InP/ZnSe/ZnS QDs. Consequently, the light-emitting diodes based on the green QDs realize a maximum luminance of 15606 cd m^-2 , a peak external quantum efficiency of 10.6%, and a long half lifetime of > 5000 h.

Colloidal III-V Quantum Dot Photodiodes for Short-Wave Infrared Photodetection

Short-wave infrared (SWIR) image sensors based on colloidal quantum dots (QDs) are characterized by low cost, small pixel pitch, and spectral tunability. Adoption of QD-SWIR imagers is, however, hampered by a reliance on restricted elements such as Pb and Hg. Here, QD photodiodes, the central element of a QD image sensor, made from non-restricted In(As,P) QDs that operate at wavelengths up to 1400 nm are demonstrated. Three different In(As,P) QD batches that are made using a scalable, one-size-one-batch reaction and feature a band-edge absorption at 1140, 1270, and 1400 nm are implemented. These QDs are post-processed to obtain In(As,P) nanocolloids stabilized by short-chain ligands, from which semiconducting films of n-In(As,P) are formed through spincoating. For all three sizes, sandwiching such films between p-NiO as the hole transport layer and Nb:TiO₂ as the electron transport layer yields In(As,P) QD photodiodes that exhibit best internal quantum efficiencies at the QD band gap of 46±5% and are sensitive for SWIR light up to 1400 nm.

ZnF2-Assisted Synthesis of Highly Luminescent InP/ZnSe/ZnS Quantum Dots for Efficient and Stable Electroluminescence

High-quality InP-based quantum dots (QDs) have become very promising, environmentally benign light emitters for display applications, but their synthesis generally entails hazardous hydrofluoric acid. Here, we present a highly facile route to InP/ZnSe/ZnS core/shell/shell QDs with a near-unity photoluminescence quantum yield. As the key additive, the inorganic salt ZnF₂ mildly reacts with carboxylic acid at a high temperature and in situ generates HF, which eliminates surface oxide impurities, thus facilitating epitaxial shell growth. The resulting InP/ZnSe/ZnS QDs exhibit a narrower emission line width and better thermal stability in comparison with QDs synthesized with hydrofluoric acid. Light-emitting diodes using large-sized InP/ZnSe/ZnS QDs without replacing original ligands achieve the highest peak external quantum efficiency of 22.2%, to the best of our knowledge, along with a maximum brightness of >110 000 cd/m² and a T₉₅ lifetime of >32 000 h at 100 cd/m². This safe approach is anticipated to be applied for a wide range of III-V QDs.

Synergistic Effect of Halogen Ions and Shelling Temperature on Anion Exchange Induced Interfacial Restructuring for Highly Efficient Blue Emissive InP/ZnS Quantum Dots

InP quantum dots (QDs) have attracted much attention owing to their nontoxic properties and shown great potential in optoelectronic applications. Due to the surface defects and lattice mismatch, the interfacial structure of InP/ZnS QDs plays a significant role in their performance. Herein, the formation of In-S and S_x -In-P_1-x interlayers through anion exchange at the shell-growth stage is revealed. More importantly, it is proposed that the composition of interface is dependent on the synergistic effect of halogen ions and shelling temperature. High shelling temperature contributes to the optical performance improvement resulting from the formation of interlayers, besides the thicker ZnS shell. Moreover, the effect relates to the halogen ions where I^- presents more obvious enhancement than Br^- and Cl^- , owing to their different ability to coordinate with In dangling bonds, which are inclined to form In-S and S_x -In-P_1-x bonds. Further, the anion exchange under I^- -rich environment causes a blue-shift of emission wavelength with shelling temperature increasing, unobserved in a Cl^- - or Br^- -rich environment. It contributes to the preparation of highly efficient blue emissive InP/ZnS QDs with emission wavelength of 473 nm, photoluminescence quantum yield of ≈50% and full width at half maximum of 47 nm.

Engineering Long-Lived Blue Photoluminescence from InP Quantum Dots Using Isomers of Naphthoic Acid

Leveraging triplet excitons in semiconductor quantum dots (QDs) in concert with surface-anchored molecules to produce long-lifetime thermally activated delayed photoluminescence (TADPL) continues to emerge as a promising technology in diverse areas including photochemical catalysis and light generation. All QDs presently used to generate TADPL in QD/molecule constructs contain toxic metals including Cd(II) and Pb(II), ultimately limiting potential real-world applications. Here, we report newly conceived blue-emitting TADPL-producing nanomaterials featuring InP QDs interfaced with 1- and 2-naphthoic acid (1-NA and 2-NA) ligands. These constitutional isomers feature similar triplet energies but disparate triplet lifetimes, translating into InP-based TADPL processes displaying two distinct average lifetime ranges upon cooling from 293 to 193 K. The time constants fall between 4.4 and 59.2 μs in the 2-NA-decorated InP QDs while further expanding between 84.2 and 733.2 μs in the corresponding 1-NA-ligated InP materials, representing a 167-fold time window. The resulting long-lived excited states enabled facile bimolecular triplet sensitization of ¹O₂ phosphorescence in the near-IR and promoted sensitized triplet-triplet annihilation photochemistry in 2,5-diphenyloxazole. We speculate that the discovery of new nanomaterials exhibiting TADPL lies on the horizon as myriad QDs can be readily derivatized using isomers of numerous classes of surface-anchoring chromophores yielding precisely regulated photophysical properties.

Bifunctional Metal Oleate as an Alternative Method to Remove Surface Oxide and Passivate Surface Defects of Aminophosphine-Based InP Quantum Dots

The optical properties of indium phosphide (InP) quantum dots (QDs) are significantly influenced by their surface native oxides, which are generally removed by treating InP cores with hydrofluoric acid (HF). Besides the harmful health effects of HF, its etching may cause over-etching or QD size broadening, and surface oxidation can also reoccur rapidly. In the present study, a safer bifunctional metal oleate treatment was developed to simultaneously remove the surface oxide layer and passivate the surface defects for aminophosphine-based InP QDs. Compared to conventional HF etching, the bifunctional metal oleate was able to more efficiently remove the surface oxide of InP cores and effectively preserve the oxide-free surface, leading to a 20% narrower photoluminescence (PL) bandwidth after growing a ZnSe/ZnS shell. The metal oleate treatment is thus considered a greener and safer post-synthetic method to remove InP surface oxide and provide additional passivation to improve the optical properties of aminophosphine-based InP QDs, which could have potential in industrial mass production.

Luminescent Anisotropic Wurtzite InP Nanocrystals

Indium phosphide (InP) nanocrystals are emerging as an alternative to heavy metal containing nanocrystals for optoelectronic applications but lag behind in terms of synthetic control. Herein, luminescent wurtzite InP nanocrystals with narrow size distribution were synthesized via a cation exchange reaction from hexagonal Cu₃P nanocrystals. A comprehensive surface treatment with NOBF₄ was performed, which removes excess copper while generating stoichiometric In/P nanocrystals with fluoride surface passivation. The attained InP nanocrystals manifest a highly resolved absorption spectrum with a narrow emission line of 80 meV, and photoluminescence quantum yield of up to 40%. Optical anisotropy measurements on ensemble and single particle bases show the occurrence of polarized transitions directly mirroring the anisotropic wurtzite lattice, as also manifested from modeling of the quantum confined electronic levels. This shows a green synthesis path for achieving wurtzite InP nanocrystals with desired optoelectronic properties including color purity and light polarization with potential for diverse optoelectronic applications.

Near infrared bioimaging and biosensing with semiconductor and rare-earth nanoparticles: recent developments in multifunctional nanomaterials

Research in novel materials has been extremely active over the past few decades, wherein a major area of interest has been nanoparticles with special optical properties. These structures can overcome some of the intrinsic limitations of contrast agents routinely used in medical practice, while offering additional functionalities. Materials that absorb or scatter near infrared light, to which biological tissues are partially transparent, have attracted significant attention and demonstrated their potential in preclinical research. In this review, we provide an at-a-glance overview of the most recent developments in near infrared nanoparticles that could have far-reaching applications in the life sciences. We focus on materials that offer additional functionalities besides diagnosis based on optical contrast: multiple imaging modalities (multimodal imaging), sensing of physical and chemical cues (multivariate diagnosis), or therapeutic activity (theranostics). Besides presenting relevant case studies for each class of optically active materials, we discuss their design and safety considerations, detailing the potential hurdles that may complicate their clinical translation. While multifunctional nanomaterials have shown promise in preclinical research, the field is still in its infancy; there is plenty of room to maximize its impact in preclinical studies as well as to deliver it to the clinics.

Tuning the interfacial stoichiometry of InP core and InP/ZnSe core/shell quantum dots

We demonstrate fine-tuning of the atomic composition of InP/ZnSe quantum dots (QDs) at the core/shell interface. Specifically, we control the stoichiometry of both anions (P, As, S, and Se) and cations (In and Zn) at the InP/ZnSe core/shell interface and correlate these changes with the resultant steady-state and time-resolved optical properties of the nanocrystals. The use of reactive trimethylsilyl reagents results in surface-limited reactions that shift the nanocrystal stoichiometry to anion-rich and improve epitaxial growth of the shell layer. In general, anion deposition on the InP QD surface results in a redshift in the absorption, quenching of the excitonic photoluminescence, and a relative increase in the intensity of broad trap-based photoluminescence, consistent with delocalization of the exciton wavefunction and relaxation of exciton confinement. Time-resolved photoluminescence data for the resulting InP/ZnSe QDs show an overall small change in the decay dynamics on the ns timescale, suggesting that the relatively low photoluminescence quantum yields may be attributed to the creation of new thermally activated charge trap states and likely a dark population that is inseparable from the emissive QDs. Cluster-model density functional theory calculations show that the presence of core/shell interface anions gives rise to electronic defects contributing to the redshift in the absorption. These results highlight a general strategy to atomistically tune the interfacial stoichiometry of InP QDs using surface-limited reaction chemistry allowing for precise correlations with the electronic structure and photophysical properties.

Effects of Interfacial Oxidative Layer Removal on Charge Carrier Recombination Dynamics in InP/ZnSexS1-x Core/Shell Quantum Dots

Red-light-emitting InP/ZnSe_xS_1-x core/shell quantum dots (QDs) were prepared by one-pot synthesis with optimal hydrogen fluoride (HF) treatment. Most of the surficial oxidative species could be removed, and the dangling bonds would be passivated by Zn ions for the InP cores during HF treatment, which would be beneficial to the subsequent ZnSe_xS_1-x shell coating. Three-dimensional time-resolved photoluminescence spectra of the QD samples were analyzed by singular value decomposition global fitting to determine the radiative and nonradiative lifetimes of charge carriers. A proposed model illustrated that the charge carriers in the InP/ZnSe_xS_1-x QDs with interfacial oxidative layer removal would evidently recombine through radiative pathways, mainly from the conduction band to the valence band (lifetime, 33 ns) and partially from the trap states (lifetime, 150 ns). This work offers the important physical insight into the charge carrier dynamics of low-toxicity QDs which have the desired optical properties for optoelectronic applications.

Observation of ordered organic capping ligands on semiconducting quantum dots via powder X-ray diffraction

Powder X-ray diffraction is one of the key techniques used to characterize the inorganic structure of colloidal nanocrystals. The comparatively low scattering factor of nuclei of the organic capping ligands and their propensity to be disordered has led investigators to typically consider them effectively invisible to this technique. In this report, we demonstrate that a commonly observed powder X-ray diffraction peak around [Formula: see text] observed in many small, colloidal quantum dots can be assigned to well-ordered aliphatic ligands bound to and capping the nanocrystals. This conclusion differs from a variety of explanations ascribed by previous sources, the majority of which propose an excess of organic material. Additionally, we demonstrate that the observed ligand peak is a sensitive probe of ligand shell ordering. Changes as a function of ligand length, geometry, and temperature can all be readily observed by X-ray diffraction and manipulated to achieve desired outcomes for the final colloidal system.

Thermodynamics of Composition Dependent Ligand Exchange on the Surfaces of Colloidal Indium Phosphide Quantum Dots

Quantum dot surfaces can have a substantial effect on their physical, chemical, and optoelectronic properties. When the chemistry that occurs at the surface of nanocrystals is studied, critical insights can be gained into the fundamental structural, thermodynamic, and optical properties of quantum dot materials providing a valuable guide for how to best adapt them for desired applications. Colloidal quantum dots are often terminated with organic ligands that consist of a long aliphatic chain and a head group that binds tightly to the nanocrystal surface. While extensive work has been done to understand how ligand head groups influence quantum dot properties, studies to unravel the influence of the organic ligand tail on ligands and surface reaction equilibria are incomplete. To further investigate the driving forces of quantum dot surface modification, a series of ligand exchange reactions with oleic acid were performed on indium phosphide quantum dots, initially terminated with straight-chain carboxylates of variable lengths. The reaction was monitored using isothermal titration calorimetry and ¹H NMR to determine the extent of each reaction and its associated thermodynamics. From these measurements, interligand interactions were observed to be dependent on the length of the straight-chain ligand. A modified Ising model was used to investigate the enthalpic and entropic effects contributing to these ligand exchanges and reveal that interligand interactions play a much larger role than previously thought. Additional experimentation with phosphonic acid ligand exchange reveals complexity in the reaction mechanism but further illustrates the significant impact of ligand tail group length on thermodynamics, even in cases where there is a large difference in head group binding energy.

Thermodynamic Investigation of Increased Luminescence in Indium Phosphide Quantum Dots by Treatment with Metal Halide Salts

Increasing the quantum yields of InP quantum dots is important for their applications, particularly for use in consumer displays. While several methods exist to improve quantum yield, the addition of inorganic metal halide salts has proven promising. To further investigate this phenomenon, InP quantum dots dispersed in tetrahydrofuran were titrated with ZnCl₂, ZnBr₂, and InCl₃. The optical properties were observed, and the reactions were studied by using quantitative ¹H NMR and thermodynamic measurements from isothermal titration calorimetry. These measurements contradict the previously hypothesized reaction mechanism in which metal halide salts, acting as Z-type ligands, passivate undercoordinated anions on the surface of the quantum dots. This work provides evidence for a newly proposed mechanism wherein the metal halide salts undergo a ligand exchange with indium myristate. Thermodynamic measurements prove key to supporting this new mechanism, particularly in describing the organic ligand interactions on the surface. An Ising model was used to simulate the quantum dot surface and was fit by using thermodynamic and ¹H NMR data. Together, these data and the proposed exchange mechanism provide greater insight into the surface chemistry of quantum dots.

Sterically Encumbered Tris(trialkylsilyl) Phosphine Precursors for Quantum Dot Synthesis

The synthesis of nanomaterials with a narrow size distribution is challenging, especially for III-V semiconductor nanoparticles (also known as quantum dots). Concerning phosphides, this issue has been largely attributed the use of overly reactive precursors. The problem is exacerbated due to the narrow range of competent reagents for III-V semiconductor syntheses. We report the use of sterically encumbered tris(triethylsilyl) phosphine and tris(tributylsilyl) phosphine for InP quantum dot (QD) synthesis among others. The hypothesis was that these reagents are less reactive than the near-ubiquitous precursor tris(trimethylsilyl) phosphine and can be used to create more homogeneous materials. It was found that the InP products' quantum yields and emission color saturation (fwhm) were improved, but not to the levels realized in CdSe QDs. Regardless, these reagents have other positive attributes; they are less pyrophoric and can be applied toward the synthesis of II-V semiconductors and organophosphorus compounds. Concerning safe practices, we demonstrate that ammonium bifluoride is an effective replacement for highly toxic HF for the post-treatment of III-V semiconductor quantum dots.

Giant Enhancement of Fluorescence Emission by Fluorination of Porous Graphene with High Defect Density and Subsequent Application as Fe3+ Ion Sensors

Defect-mediated nonradiative recombination in traditional semiconductors, such as porous graphene, tremendously lowers the fluorescence emission, thus greatly restricting their applications in more extensive fields. Here, we report that the fluorescence emission of porous graphene with a high defect density has a giant enhancement (about two orders of magnitude) by a direct and simple fluorination strategy, showing a fine defect-tolerance characteristic. Meanwhile, the corresponding fluorocarbon bonds with excellent thermostability (over 500 °C in N₂ even air) also bring about good stability. The photophysical origins during the whole photoluminescence evolution are further investigated. In the excitation process, the coexistence of fluorine and aromatic regions in fluorinated porous graphene (FPG) contributes to producing a new electronic band gap structure to match the maximum excitation wavelength, then numerous excitons generate, which is a precondition for strong fluorescence emission. In the emission process, weak electron-phonon interactions, large rigidity, and constrained electron at the defects in FPG greatly reduce nonradiative recombination loss. Moreover, fluorine at the defects also reduces interlayer interactions among FPG nanosheets and resists the influence of absorbed impurities, thereby further restricting nonradiative recombination pathway. Highly fluorescent FPG has been utilized as a fascinating tool to achieve sensitive and naked-eye detection of Fe³⁺ ions with a high selectivity. The fluorescence quenching efficiency reaches 24% even with an ultralow concentration of Fe³⁺ (0.06 μM), and that increases to 84% when the concentration of Fe³⁺ is 396 μM.

InP Quantum Dots: Synthesis and Lighting Applications

InP quantum dots (QDs) are typical III-V group semiconductor nanocrystals that feature large excitonic Bohr radius and high carrier mobility. The merits of InP QDs include large absorption coefficient, broad color tunability, and low toxicity, which render them promising alternatives to classic Cd/Pb-based QDs for applications in practical settings. Over the past two decades, the advances in wet-chemistry methods have enabled the synthesis of small-sized colloidal InP QDs with the assistance of organic ligands. By proper selection of synthetic protocols and precursor materials coupled with surface passivation, the QYs of InP QDs are pushed to near unity with modest color purity. The state-of-the-art InP QDs with appealing optical and electronic properties have excelled in many applications with the potential for commercialization. This work focuses on the recent development of wet-chemistry protocols and various precursor materials for the synthesis and surface modification of InP QDs. Current methods for constructing light-emitting diodes using novel InP-based QDs are also summarized.

Piezochromic luminescence in all-inorganic core-shell InP/ZnS nanocrystals via pressure-modulated strain engineering

Piezochromic materials alter their photoluminescent (PL) colors in response to the action of external force. Such materials have attracted much attention owing to their promising applications in pressure-sensing, optoelectronic memory and anticounterfeiting. However, almost all the reported piezochromic materials were limited to the organic matters or compounds containing organic components. Here we present piezochromic materials and pressure-induced optical response based on all-inorganic core/shell InP/ZnS nanocrystals (NCs). The InP/ZnS NCs exhibit noticeable PL color changes, shifting from orange (2.08 eV) to green (2.25 eV), with the PL intensity showing slight enhancement below an applied pressure of 2.5 GPa. Further compressing to fluorescence quenching produces an ultrabroad energy tenability range up to 400 meV. Structural and time-resolved PL lifetime studies, together with first-principle calculations, reveal the weakening of strain-induced defect states in the low pressure regime, which contributes to effective excition recombination, thus ensuring high fluorescence emission of InP/ZnS NCs. This work provides a promising strategy to prepare piezochromic materials of all-inorganic semiconductors, thereby greatly increasing the choice of materials for new applications.

Surface passivation extends single and biexciton lifetimes of InP quantum dots

Indium phosphide quantum dots (InP QDs) are nontoxic nanomaterials with potential applications in photocatalytic and optoelectronic fields. Post-synthetic treatments of InP QDs are known to be essential for improving their photoluminescence quantum efficiencies (PLQEs) and device performances, but the mechanisms remain poorly understood. Herein, by applying ultrafast transient absorption and photoluminescence spectroscopies, we systematically investigate the dynamics of photogenerated carriers in InP QDs and how they are affected by two common passivation methods: HF treatment and the growth of a heterostructure shell (ZnS in this study). The HF treatment is found to improve the PLQE up to 16-20% by removing an intrinsic fast hole trapping channel (τ h,non = 3.4 ± 1 ns) in the untreated InP QDs while having little effect on the band-edge electron decay dynamics (τ e = 26-32 ns). The growth of the ZnS shell, on the other hand, is shown to improve the PLQE up to 35-40% by passivating both electron and hole traps in InP QDs, resulting in both a long-lived band-edge electron (τ e > 120 ns) and slower hole trapping lifetime (τ h,non > 45 ns). Furthermore, both the untreated and the HF-treated InP QDs have short biexciton lifetimes (τ xx ∼ 1.2 ± 0.2 ps). The growth of an ultra-thin ZnS shell (∼0.2 nm), on the other hand, can significantly extend the biexciton lifetime of InP QDs to 20 ± 2 ps, making it a passivation scheme that can improve both the single and multiple exciton lifetimes. Based on these results, we discuss the possible trap-assisted Auger processes in InP QDs, highlighting the particular importance of trap passivation for reducing the Auger recombination loss in InP QDs.

Effect of indium alloying on the charge carrier dynamics of thick-shell InP/ZnSe quantum dots

Thick-shell InP/ZnSe III-V/II-VI quantum dots (QDs) were synthesized with two distinct interfaces between the InP core and ZnSe shell: alloy and core/shell. Despite sharing similar optical properties in the spectral domain, these two QD systems have differing amounts of indium incorporation in the shell as determined by high-resolution energy-dispersive x-ray spectroscopy scanning transmission electron microscopy. Ultrafast fluorescence upconversion spectroscopy was used to probe the charge carrier dynamics of these two systems and shows substantial charge carrier trapping in both systems that prevents radiative recombination and reduces the photoluminescence quantum yield. The alloy and core/shell QDs show slight differences in the extent of charge carrier localization with more extensive trapping observed in the alloy nanocrystals. Despite the ability to grow a thick shell, structural defects caused by III-V/II-VI charge carrier imbalances still need to be mitigated to further improve InP QDs.