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Fu Y, Liu Z, Yue S, Zhang K, Wang R, Zhang Z. Optical Second Harmonic Generation of Low-Dimensional Semiconductor Materials. NANOMATERIALS (BASEL, SWITZERLAND) 2024; 14:662. [PMID: 38668156 PMCID: PMC11054873 DOI: 10.3390/nano14080662] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/24/2024] [Revised: 04/02/2024] [Accepted: 04/07/2024] [Indexed: 04/29/2024]
Abstract
In recent years, the phenomenon of optical second harmonic generation (SHG) has attracted significant attention as a pivotal nonlinear optical effect in research. Notably, in low-dimensional materials (LDMs), SHG detection has become an instrumental tool for elucidating nonlinear optical properties due to their pronounced second-order susceptibility and distinct electronic structure. This review offers an exhaustive overview of the generation process and experimental configurations for SHG in such materials. It underscores the latest advancements in harnessing SHG as a sensitive probe for investigating the nonlinear optical attributes of these materials, with a particular focus on its pivotal role in unveiling electronic structures, bandgap characteristics, and crystal symmetry. By analyzing SHG signals, researchers can glean invaluable insights into the microscopic properties of these materials. Furthermore, this paper delves into the applications of optical SHG in imaging and time-resolved experiments. Finally, future directions and challenges toward the improvement in the NLO in LDMs are discussed to provide an outlook in this rapidly developing field, offering crucial perspectives for the design and optimization of pertinent devices.
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Affiliation(s)
- Yue Fu
- Microelectronics Instruments and Equipment R&D Center, Institute of Microelectronics, Chinese Academy of Sciences, 3 Beitucheng West Road, Beijing 100029, China; (Y.F.); (Z.L.); (S.Y.); (K.Z.)
| | - Zhengyan Liu
- Microelectronics Instruments and Equipment R&D Center, Institute of Microelectronics, Chinese Academy of Sciences, 3 Beitucheng West Road, Beijing 100029, China; (Y.F.); (Z.L.); (S.Y.); (K.Z.)
- School of Integrated Circuits, University of Chinese Academy of Sciences, No. 19(A) Yuquan Road, Beijing 100049, China
| | - Song Yue
- Microelectronics Instruments and Equipment R&D Center, Institute of Microelectronics, Chinese Academy of Sciences, 3 Beitucheng West Road, Beijing 100029, China; (Y.F.); (Z.L.); (S.Y.); (K.Z.)
- School of Integrated Circuits, University of Chinese Academy of Sciences, No. 19(A) Yuquan Road, Beijing 100049, China
| | - Kunpeng Zhang
- Microelectronics Instruments and Equipment R&D Center, Institute of Microelectronics, Chinese Academy of Sciences, 3 Beitucheng West Road, Beijing 100029, China; (Y.F.); (Z.L.); (S.Y.); (K.Z.)
| | - Ran Wang
- Microelectronics Instruments and Equipment R&D Center, Institute of Microelectronics, Chinese Academy of Sciences, 3 Beitucheng West Road, Beijing 100029, China; (Y.F.); (Z.L.); (S.Y.); (K.Z.)
- School of Integrated Circuits, University of Chinese Academy of Sciences, No. 19(A) Yuquan Road, Beijing 100049, China
| | - Zichen Zhang
- Microelectronics Instruments and Equipment R&D Center, Institute of Microelectronics, Chinese Academy of Sciences, 3 Beitucheng West Road, Beijing 100029, China; (Y.F.); (Z.L.); (S.Y.); (K.Z.)
- School of Integrated Circuits, University of Chinese Academy of Sciences, No. 19(A) Yuquan Road, Beijing 100049, China
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Ahmed D, Muhammad N, Ding ZJ. Black phosphorene/SnSe van der Waals heterostructure as a promising anchoring anode material for metal-ion batteries. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2023; 36:065001. [PMID: 37903432 DOI: 10.1088/1361-648x/ad07f1] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/27/2023] [Accepted: 10/30/2023] [Indexed: 11/01/2023]
Abstract
Black phosphorene (BP) is a glowing two-dimensional semiconducting layer material for cutting-edge microelectronics, with high carrier mobility and thickness-dependent band gap. Here, based on van der Waals (vdW)-corrected first-principles approaches, we investigated stacked BP/tin selenide (BP/SnSe) vdW heterostructure as an anode material for metal ion batteries, which exhibits a significant theoretical capacity, along with relatively durable binding strength compared to the constituent BP and SnSe monolayers. Our calculations demonstrated that the Li/Na adatom favors insertion into the interlayer region of BP/SnSe vdW heterostructure owing to synergistic interfacial effect, resulting in comparable diffusivity to the BP and SnSe monolayers. Subsequently, the theoretical specific capacities for Li/Na are found to be as high as 956.30 mAhg-1and 828.79 mAhg-1, respectively, which could be attributed to the much higher storage capacity of Li/Na adatoms in the BP/SnSe vdW heterostructure. Moreover, the electronic structure calculations reveal that a large amount of charge transfer assists in semiconductor-to-metallic transition upon lithiation/sodiation, ensuring good electrical conductivity. These simulations verify that the BP/SnSe vdW heterostructure has immense potential for application in the design of metal-ion battery technologies.
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Affiliation(s)
- Dildar Ahmed
- Hefei National Research Center for Physical Sciences at the Microscale, University of Science and Technology of China, Hefei, Anhui 230026, People's Republic of China
| | - Nisar Muhammad
- Hefei National Research Center for Physical Sciences at the Microscale, University of Science and Technology of China, Hefei, Anhui 230026, People's Republic of China
| | - Z J Ding
- Hefei National Research Center for Physical Sciences at the Microscale, University of Science and Technology of China, Hefei, Anhui 230026, People's Republic of China
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Jang H, Jung YS, Oh MW. Advances in thermoelectric AgBiSe 2: Properties, strategies, and future challenges. Heliyon 2023; 9:e21117. [PMID: 37928035 PMCID: PMC10623285 DOI: 10.1016/j.heliyon.2023.e21117] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 07/17/2023] [Revised: 10/04/2023] [Accepted: 10/16/2023] [Indexed: 11/07/2023] Open
Abstract
Thermoelectric materials are attracting considerable attention to alleviate the global energy crisis by enabling the direct conversion of heat into electricity. As a class of I-V-VI2 semiconductors, AgBiSe2 is expected to be the potential thermoelectric material to replace conventional PbTe-based compounds due to its non-toxic and abundant nature of its constituent elements. This review article summarizes the fundamental properties of AgBiSe2, thermoelectric properties, the effect of different dopants on its transport properties and entropy engineering for cubic phase stabilization with the detailed description of related techniques used to analyze the properties of AgBiSe2. The current thermoelectric figure-of-merit and approaches to further improve performance and operational stability are also discussed.
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Affiliation(s)
- Hanhwi Jang
- Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon, 34141, Republic of Korea
| | - Yeon Sik Jung
- Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon, 34141, Republic of Korea
| | - Min-Wook Oh
- Department of Materials Science and Engineering, Hanbat National University, Yuseong-gu, Daejeon, 34158, Republic of Korea
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Dewan S, Khanikar PD, Mudgal R, Singh A, Muduli PK, Singh R, Das S. Large-Area GeSe Realized Using Pulsed Laser Deposition for Ultralow-Noise and Ultrafast Broadband Phototransistors. ACS APPLIED MATERIALS & INTERFACES 2023. [PMID: 37216628 DOI: 10.1021/acsami.3c02522] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/24/2023]
Abstract
Here, we report on the comprehensive growth, characterization, and optoelectronic application of large-area, two-dimensional germanium selenide (GeSe) layers prepared using the pulsed laser deposition (PLD) technique. Back-gated phototransistors based on few-layered 2D GeSe have been fabricated on a SiO2/Si substrate for ultrafast, low noise, and broadband light detection, showing spectral functionalities over a broad wavelength range of 0.4-1.5 μm. The broadband detection capabilities of the device have been attributed to the self-assembled GeOx/GeSe heterostructure and sub-bandgap absorption in GeSe. Besides a high photoresponsivity of 25 AW-1, the GeSe phototransistor displayed a high external quantum efficiency of the order of 6.14 × 103%, a maximum specific detectivity of 4.16 × 1010 Jones, and an ultralow noise equivalent power of 0.09 pW/Hz1/2. The detector has an ultrafast response/recovery time of 3.2/14.9 μs and can show photoresponse up to a high cut-off frequency of 150 kHz. These promising device parameters exhibited by PLD-grown GeSe layers-based detectors make it a favorable choice against present-day mainstream van der Waals semiconductors with limited scalability and optoelectronic compatibility in the visible-to-infrared spectral range.
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Affiliation(s)
- Sheetal Dewan
- School of Interdisciplinary Research, Indian Institute of Technology Delhi, Hauz Khas, New Delhi 110016, India
| | - Prabal Dweep Khanikar
- University of Queensland-IIT Delhi Academy of Research (UQIDAR), Hauz Khas, New Delhi 110016, India
- Centre for Applied Research in Electronics, Indian Institute of Technology Delhi, Hauz Khas, New Delhi 110016, India
| | - Richa Mudgal
- Department of Physics, Indian Institute of Technology Delhi, New Delhi 110016, India
| | - Avneet Singh
- Department of Physics, Shivaji College, University of Delhi, New Delhi 110027, India
| | - Pranaba Kishor Muduli
- Department of Physics, Indian Institute of Technology Delhi, New Delhi 110016, India
| | - Rajendra Singh
- Department of Physics, Indian Institute of Technology Delhi, New Delhi 110016, India
- Department of Electrical Engineering, Indian Institute of Technology Delhi, New Delhi 110016, India
| | - Samaresh Das
- Centre for Applied Research in Electronics, Indian Institute of Technology Delhi, Hauz Khas, New Delhi 110016, India
- Department of Electrical Engineering, Indian Institute of Technology Delhi, New Delhi 110016, India
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5
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Liu L, Bai B, Yang X, Du Z, Jia G. Anisotropic Heavy-Metal-Free Semiconductor Nanocrystals: Synthesis, Properties, and Applications. Chem Rev 2023; 123:3625-3692. [PMID: 36946890 DOI: 10.1021/acs.chemrev.2c00688] [Citation(s) in RCA: 6] [Impact Index Per Article: 6.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 03/23/2023]
Abstract
Heavy-metal (Cd, Hg, and Pb)-containing semiconductor nanocrystals (NCs) have been explored widely due to their unique optical and electrical properties. However, the toxicity risks of heavy metals can be a drawback of heavy-metal-containing NCs in some applications. Anisotropic heavy-metal-free semiconductor NCs are desirable replacements and can be realized following the establishment of anisotropic growth mechanisms. These anisotropic heavy-metal-free semiconductor NCs can possess lower toxicity risks, while still exhibiting unique optical and electrical properties originating from both the morphological and compositional anisotropy. As a result, they are promising light-emitting materials in use various applications. In this review, we provide an overview on the syntheses, properties, and applications of anisotropic heavy-metal-free semiconductor NCs. In the first section, we discuss hazards of heavy metals and introduce the typical heavy-metal-containing and heavy-metal-free NCs. In the next section, we discuss anisotropic growth mechanisms, including solution-liquid-solid (SLS), oriented attachment, ripening, templated-assisted growth, and others. We discuss mechanisms leading both to morphological anisotropy and to compositional anisotropy. Examples of morphological anisotropy include growth of nanorods (NRs)/nanowires (NWs), nanotubes, nanoplatelets (NPLs)/nanosheets, nanocubes, and branched structures. Examples of compositional anisotropy, including heterostructures and core/shell structures, are summarized. Third, we provide insights into the properties of anisotropic heavy-metal-free NCs including optical polarization, fast electron transfer, localized surface plasmon resonances (LSPR), and so on, which originate from the NCs' anisotropic morphologies and compositions. Finally, we summarize some applications of anisotropic heavy-metal-free NCs including catalysis, solar cells, photodetectors, lighting-emitting diodes (LEDs), and biological applications. Despite the huge progress on the syntheses and applications of anisotropic heavy-metal-free NCs, some issues still exist in the novel anisotropic heavy-metal-free NCs and the corresponding energy conversion applications. Therefore, we also discuss the challenges of this field and provide possible solutions to tackle these challenges in the future.
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Affiliation(s)
- Long Liu
- Key Lab for Special Functional Materials, Ministry of Education, National and Local Joint Engineering Research Center for High-Efficiency Display and Lighting Technology, School of Materials Science and Engineering, and Collaborative Innovation Center of Nano Functional Materials and Applications, Henan University, Kaifeng 475004, China
| | - Bing Bai
- Key Lab for Special Functional Materials, Ministry of Education, National and Local Joint Engineering Research Center for High-Efficiency Display and Lighting Technology, School of Materials Science and Engineering, and Collaborative Innovation Center of Nano Functional Materials and Applications, Henan University, Kaifeng 475004, China
| | - Xuyong Yang
- Key Laboratory of Advanced Display and System Applications of Ministry of Education, Shanghai University, 149 Yanchang Road, Shanghai 200072, P. R. China
| | - Zuliang Du
- Key Lab for Special Functional Materials, Ministry of Education, National and Local Joint Engineering Research Center for High-Efficiency Display and Lighting Technology, School of Materials Science and Engineering, and Collaborative Innovation Center of Nano Functional Materials and Applications, Henan University, Kaifeng 475004, China
| | - Guohua Jia
- School of Molecular and Life Sciences, Curtin University, Perth, WA 6102, Australia
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6
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Huan C, Cai Y, Kripalani DR, Zhou K, Ke Q. Abnormal behavior of preferred formation of the cationic vacancies from the interior in a γ-GeSe monolayer with the stereo-chemical antibonding lone-pair state. NANOSCALE HORIZONS 2023; 8:404-411. [PMID: 36723237 DOI: 10.1039/d2nh00573e] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/18/2023]
Abstract
Two-dimensional (2D) materials tend to have the preferable formation of vacancies at the outer surface. Here, contrary to the normal notion, we reveal a type of vacancy that thermodynamically initiates from the interior part of the 2D backbone of germanium selenide (γ-GeSe). Interestingly, the Ge-vacancy (VGe) in the interior part of γ-GeSe possesses the lowest formation energy amongst the various types of defects considered. We also find a low diffusion barrier (1.04 eV) of VGe, which is half of those of sulfur vacancies in MoS2. The facile formation of mobile VGe is rooted in the antibonding coupling of the lone-pair Ge 4s and Se 4p states near the valence band maximum, which also exists in other gamma-phase MX (M = Sn, Ge; X = S, Te). The VGe is accompanied by a shallow acceptor level in the band gap and induces strong infrared light absorption and p-type conductivity. The VGe located in the middle cationic Ge sublattice is well protected by the surface Se layers - a feature that is absent in other atomically thin materials. Our work suggests that the unique well-buried inner VGe, with the potential of forming structurally protected ultrathin conducting filaments, may render the GeSe layer an ideal platform for quantum emitting, memristive, and neuromorphic applications.
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Affiliation(s)
- Changmeng Huan
- School of Microelectronics Science and Technology, Sun Yat-sen university, Zhuhai 519082, China.
- Guangdong Provincial Key Laboratory of Optoelectronic Information Processing Chips and Systems, Sun Yat-sen University, Zhuhai 519082, China
| | - Yongqing Cai
- Joint Key Laboratory of the Ministry of Education, Institute of Applied Physics and Materials Engineering, University of Macau, Taipa, Macau, China.
| | - Devesh R Kripalani
- School of Mechanical and Aerospace Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798, Singapore
| | - Kun Zhou
- School of Mechanical and Aerospace Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798, Singapore
| | - Qingqing Ke
- School of Microelectronics Science and Technology, Sun Yat-sen university, Zhuhai 519082, China.
- Guangdong Provincial Key Laboratory of Optoelectronic Information Processing Chips and Systems, Sun Yat-sen University, Zhuhai 519082, China
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8
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Li D, Zhang X, He W, Lei L, Peng Y, Xiang G. Structure-dependent high- TC ferromagnetism in Mn-doped GeSe. NANOSCALE 2022; 14:13343-13351. [PMID: 36069243 DOI: 10.1039/d2nr02955c] [Citation(s) in RCA: 2] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
Layered IV-VI diluted magnetic semiconductors (DMSs) have exhibited fascinating ferromagnetism down to atomic layers, but their relatively low Curie temperature (TC, ≤200 K) significantly hinders their practical application. In this work, Mn-doped GeSe (GeMnSe) DMSs with high-TC ferromagnetism (FM) are synthesized by chemical vapor deposition. As the Mn concentration varies, the obtained samples exhibit various structures including single-crystalline nanocombs (SC-NCs), polycrystalline nanoparticles (PC-NPs) and amorphous nanoaggregates (a-NAs). All the samples exhibit FM, and their TC and saturation magnetization (MS) are correlated to their structures. Notably, GeMnSe SC-NCs show a record high TC of 309 K and a record strong magnetic moment of 4.37μB/Mn compared to all the previously-reported IV-VI DMSs. Further analysis shows that the FM originates from the synergetic effect of the Ruderman-Kittel-Kasuya-Yoshida (RKKY) interaction, the crystalline order and the shape anisotropy in the samples. Our results provide a panorama of nanostructure-dependent FM in GeSe-based DMSs and suggest a peculiar playground for investigating fundamental physics and spintronic applications in IV-VI compounds.
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Affiliation(s)
- Deren Li
- College of Physics, Sichuan University, Chengdu 610064, China.
| | - Xi Zhang
- College of Physics, Sichuan University, Chengdu 610064, China.
| | - Wenjie He
- College of Physics, Sichuan University, Chengdu 610064, China.
| | - Li Lei
- Institute of Atomic and Molecular Physics, Sichuan University, Chengdu 610064, China
| | - Yong Peng
- College of Physical Science and Technology, Lanzhou University, Lanzhou 730000, China
| | - Gang Xiang
- College of Physics, Sichuan University, Chengdu 610064, China.
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9
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Shu Z, Cui X, Wang B, Yan H, Cai Y. Fast Intercalation of Lithium in Semi-Metallic γ-GeSe Nanosheet: A New Group-IV Monochalcogenide for Lithium-Ion Battery Application. CHEMSUSCHEM 2022; 15:e202200564. [PMID: 35680606 DOI: 10.1002/cssc.202200564] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/18/2022] [Revised: 05/12/2022] [Indexed: 06/15/2023]
Abstract
Existence of van der Waals gaps renders two-dimensional (2D) materials ideal passages of lithium for being used as anode materials. However, the requirement of good conductivity significantly limits the choice of 2D candidates. So far, only graphite is satisfying due to its relatively high conductivity. Recently, a new polymorph of layered germanium selenide (γ-GeSe) was proven to be semimetal in its bulk phase with a higher conductivity than graphite while its monolayer behaves semiconducting. In this work, by using first-principles calculations, the possibility was investigated of using this new group-IV monochalcogenide, γ-GeSe, as anode in Li-ion batteries (LIBs). The studies revealed that the Li atom would form an ionic adsorption with adjacent selenium atoms at the hollow site and exist in cationic state (lost 0.89 e to γ-GeSe). Results of climbing image-nudged elastic band showed the diffusion barrier of Li was 0.21 eV in the monolayer limit, which could activate a relatively fast diffusion even at room temperature on the γ-GeSe surface. The calculated theoretical average voltages ranged from 0.071 to 0.015 V at different stoichiometry of Lix GeSe with minor volume variation, suggesting its potential application as anode of LIBs. The predicted moderate binding energy, a low open-circuit voltage (comparable to graphite), and a fast motion of Li suggested that γ-GeSe nanosheet could be chemically exfoliated via Li intercalation and is a promising candidate as the anode material for LIBs.
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Affiliation(s)
- Zheng Shu
- Joint Key Laboratory of the Ministry of Education, Institute of Applied Physics and Materials Engineering, University of Macau, Taipa, Macau, China
| | - Xiangyue Cui
- Joint Key Laboratory of the Ministry of Education, Institute of Applied Physics and Materials Engineering, University of Macau, Taipa, Macau, China
| | - Bowen Wang
- Joint Key Laboratory of the Ministry of Education, Institute of Applied Physics and Materials Engineering, University of Macau, Taipa, Macau, China
| | - Hejin Yan
- Joint Key Laboratory of the Ministry of Education, Institute of Applied Physics and Materials Engineering, University of Macau, Taipa, Macau, China
| | - Yongqing Cai
- Joint Key Laboratory of the Ministry of Education, Institute of Applied Physics and Materials Engineering, University of Macau, Taipa, Macau, China
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Hussain M, Ali A, Jaffery SHA, Aftab S, Abbas S, Riaz M, Bach TPA, Raza M, Iqbal J, Hussain S, Sofer Z, Jung J. Self-biased wavelength selective photodetection in an n-IGZO/p-GeSe heterostructure by polarity flipping. NANOSCALE 2022; 14:10910-10917. [PMID: 35851391 DOI: 10.1039/d2nr01013e] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
Transparent semiconductor oxides with two-dimensional (2D) heterostructures have been extensively studied as new materials for thin-film transistors and photosensors due to their remarkable photovoltaic characteristics, making them useful for newly developed optoelectronics. Here we demonstrate the fabrication and characterization of an ITO/n-IGZO/p-GeSe transparent selective wavelength photodetector. The wavelength-dependent photovoltaic behavior of the n-IGZO/p-GeSe heterostructure under UV-Visible laser light shifts the I-V curves down with positive Voc and negative Isc values of about 0.12 V and -49 nA and 0.09 V and -17 nA, respectively. Interestingly, when an NIR laser irradiated the device, the I-V curves shifted up with negative Voc and positive Isc values of about -0.11 V and 45 nA, respectively. This behavior is attributed to the free carrier concentration induced by photogenerated carriers across the device at different points that varied with the wavelength-dependent photon absorption. Consequently, the direction of the electric field polarity across the junction can be flipped. This study demonstrates a zero-bias near-infrared (NIR) photodetector with a high photoresponsivity of 538.9 mA W-1, a fast rise time of 25.2 ms, and a decay time of 25.08 ms. Furthermore, we observed a detectivity (D) of 8.4 × 109 Jones, a normalized photocurrent to dark current ratio (NPDR) of 2.8 × 1010 W-1, and a noise equivalent power (NEP) of 2.2 × 10-14 W Hz-1/2. Our strategy opens alternative possibilities for scalable, low-cost, multifunctional transparent near-infrared photosensors with selective wavelength photodetection.
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Affiliation(s)
- Muhammad Hussain
- Department of Nanotechnology and Advanced Materials Engineering, and HMC, Sejong University, 05006, Republic of Korea.
- Department of Inorganic Chemistry, University of Chemistry and Technology Prague, Technická 5, 166 28 Prague 6, Czech Republic
| | - Asif Ali
- Department of Nanotechnology and Advanced Materials Engineering, and HMC, Sejong University, 05006, Republic of Korea.
| | - Syed Hassan Abbas Jaffery
- Department of Nanotechnology and Advanced Materials Engineering, and HMC, Sejong University, 05006, Republic of Korea.
| | - Sikandar Aftab
- Department of Intelligent Mechatronics Engineering, Sejong University, Seoul, Republic of Korea
| | - Sohail Abbas
- Department of Electrical Engineering Riphah International University, Islamabad, Pakistan
| | - Muhammad Riaz
- Department of Nanotechnology and Advanced Materials Engineering, and HMC, Sejong University, 05006, Republic of Korea.
| | - Thi Phuong Anh Bach
- Department of Nanotechnology and Advanced Materials Engineering, and HMC, Sejong University, 05006, Republic of Korea.
| | - Muhammad Raza
- Department of Physics, Karakoram International University, Gilgit, Pakistan
| | - Javed Iqbal
- Department of Physics, Karakoram International University, Gilgit, Pakistan
| | - Sajjad Hussain
- Department of Nanotechnology and Advanced Materials Engineering, and HMC, Sejong University, 05006, Republic of Korea.
| | - Zdenek Sofer
- Department of Inorganic Chemistry, University of Chemistry and Technology Prague, Technická 5, 166 28 Prague 6, Czech Republic
| | - Jongwan Jung
- Department of Nanotechnology and Advanced Materials Engineering, and HMC, Sejong University, 05006, Republic of Korea.
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11
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Guo X, Wang Y, Elbourne A, Mazumder A, Nguyen CK, Krishnamurthi V, Yu J, Sherrell PC, Daeneke T, Walia S, Li Y, Zavabeti A. Doped 2D SnS materials derived from liquid metal-solution for tunable optoelectronic devices. NANOSCALE 2022; 14:6802-6810. [PMID: 35471407 DOI: 10.1039/d2nr01135b] [Citation(s) in RCA: 6] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
Gas-liquid reaction phenomena on liquid-metal solvents can be used to form intriguing 2D materials with large lateral dimensions, where the free energies of formation determine the final product. A vast selection of elements can be incorporated into the liquid metal-based nanostructures, offering a versatile platform for fabricating novel optoelectronic devices. While conventional doping techniques of semiconductors present several challenges for 2D materials. Liquid metals provide a facile route for obtaining doped 2D semiconductors. In this work, we successfully demonstrate that the doping of 2D SnS can be realized in a glove box containing a diluted H2S gas. Low melting point elements such as Bi and In are alloyed with base liquid Sn in varying concentrations, resulting in the doping of 2D SnS layers incorporating Bi and In sulphides. Optoelectronic properties for photodetectors and piezoelectronics can be fine-tuned through the controlled introduction of selective migration doping. The structural modification of 2D SnS results in a 22.6% enhancement of the d11 piezoelectric coefficient. In addition, photodetector response times have increased by several orders of magnitude. Doping methods using liquid metals have significantly changed the photodiode and piezoelectric device performances, providing a powerful approach to tune optoelectronic device outputs.
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Affiliation(s)
- Xiangyang Guo
- School of Engineering, RMIT University, Melbourne, VIC, 3000, Australia.
| | - Yichao Wang
- School of Engineering, RMIT University, Melbourne, VIC, 3000, Australia.
- School of Life and Environmental Sciences, Deakin University, Geelong, Victoria, 3216, Australia
| | - Aaron Elbourne
- School of Engineering, RMIT University, Melbourne, VIC, 3000, Australia.
| | - Aishani Mazumder
- School of Engineering, RMIT University, Melbourne, VIC, 3000, Australia.
| | - Chung Kim Nguyen
- School of Engineering, RMIT University, Melbourne, VIC, 3000, Australia.
| | | | - Jerry Yu
- School of Engineering, RMIT University, Melbourne, VIC, 3000, Australia.
| | - Peter C Sherrell
- Department of Chemical Engineering, The University of Melbourne, Parkville, Victoria 3010, Australia.
| | - Torben Daeneke
- School of Engineering, RMIT University, Melbourne, VIC, 3000, Australia.
| | - Sumeet Walia
- School of Engineering, RMIT University, Melbourne, VIC, 3000, Australia.
| | - Yongxiang Li
- School of Engineering, RMIT University, Melbourne, VIC, 3000, Australia.
| | - Ali Zavabeti
- School of Engineering, RMIT University, Melbourne, VIC, 3000, Australia.
- Department of Chemical Engineering, The University of Melbourne, Parkville, Victoria 3010, Australia.
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12
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Sutter E, French JS, Sutter P. Free-standing large, ultrathin germanium selenide van der Waals ribbons by combined vapor-liquid-solid growth and edge attachment. NANOSCALE 2022; 14:6195-6201. [PMID: 35393984 DOI: 10.1039/d2nr00397j] [Citation(s) in RCA: 6] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
Among group IV monochalcogenides, layered GeSe is of interest for its anisotropic properties, 1.3 eV direct band gap, ferroelectricity, high mobility, and excellent environmental stability. Electronic, optoelectronic and photovoltaic applications depend on the development of synthesis approaches that yield large quantities of crystalline flakes with controllable size and thickness. Here, we demonstrate the growth of single-crystalline GeSe nanoribbons by a vapor-liquid-solid process over Au catalyst on different substrates at low thermal budget. The nanoribbons crystallize in a layered structure, with ribbon axis along the armchair direction of the van der Waals layers. The ribbon morphology is determined by catalyst driven fast longitudinal growth accompanied by lateral expansion via edge-specific incorporation into the basal planes. This combined growth mechanism enables temperature controlled realization of ribbons with typical widths of up to 30 μm and lengths exceeding 100 μm, while maintaining sub-50 nm thickness. Nanoscale cathodoluminescence spectroscopy on individual GeSe nanoribbons demonstrates intense temperature-dependent band-edge emission up to room temperature, with fundamental bandgap and temperature coefficient of Eg(0) = 1.29 eV and α = 3.0 × 10-4 eV K-1, respectively, confirming high quality GeSe with low concentration of non-radiative recombination centers promising for optoelectronic applications including light emitters, photodetectors, and solar cells.
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Affiliation(s)
- Eli Sutter
- Department of Mechanical and Materials Engineering, University of Nebraska-Lincoln, Lincoln, NE 68588, USA.
- Nebraska Center for Materials and Nanoscience, University of Nebraska-Lincoln, Lincoln, NE 68588, USA
| | - Jacob S French
- Department of Electrical and Computer Engineering, University of Nebraska-Lincoln, Lincoln, NE 68588, USA
| | - Peter Sutter
- Department of Electrical and Computer Engineering, University of Nebraska-Lincoln, Lincoln, NE 68588, USA
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13
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Zhang R, Luo X, Zhao F, Xu Q, Xu Y, Xu Y, Chen S, Fan X, Qiao X. Mono-crystalline Ge1-Sn Se micro-sheets with hexagonal morphologies for Visible-NIR photodetectors: Increased carrier concentration, narrowed band gap and improved performances. J SOLID STATE CHEM 2022. [DOI: 10.1016/j.jssc.2022.123068] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 10/18/2022]
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14
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Kaushik S, Karmakar S, Bisht P, Liao CH, Li X, Varshney RK, Mehta BR, Singh R. Localized surface plasmon resonance-enhanced solar-blind Al 0.4Ga 0.6N MSM photodetectors exhibiting high-temperature robustness. NANOTECHNOLOGY 2022; 33:145202. [PMID: 34902849 DOI: 10.1088/1361-6528/ac4285] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/31/2021] [Accepted: 12/13/2021] [Indexed: 06/14/2023]
Abstract
The appealing properties of tunable direct wide bandgap, high-temperature robustness and chemical hardness, make AlxGa1-xN a promising candidate for fabricating robust solar-blind photodetectors (PDs). In this work, we have utilized the optical phenomenon of localized surface plasmon resonance (LSPR) in metal nanoparticles (NPs) to significantly enhance the performance of solar-blind Al0.4Ga0.6N metal-semiconductor-metal PDs that exhibit high-temperature robustness. We demonstrate that the presence of palladium (Pd) NPs leads to a remarkable enhancement by nearly 600, 300, and 462%, respectively, in the photo-to-dark current ratio (PDCR), responsivity, and specific detectivity of the Al0.4Ga0.6N PD at the wavelength of 280 nm. Using the optical power density of only 32μW cm-2at -10 V, maximum values of ∼3 × 103, 2.7 AW-1, and 2.4 × 1013Jones are found for the PDCR, responsivity and specific detectivity, respectively. The experimental observations are supported by finite difference time domain simulations, which clearly indicate the presence of LSPR in Pd NPs decorated on the surface of Al0.4Ga0.6N. The mechanism behind the enhancement is investigated in detail, and is ascribed to the LSPR induced effects, namely, improved optical absorption, enhanced local electric field and LSPR sensitization effect. Moreover, the PD exhibits a stable operation up to 400 K, thereby exhibiting the high-temperature robustness desirable for commercial applications.
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Affiliation(s)
- Shuchi Kaushik
- Department of Physics, Indian Institute of Technology Delhi, Hauz Khas, New Delhi 110016, India
| | - Subhajit Karmakar
- Department of Physics, Indian Institute of Technology Delhi, Hauz Khas, New Delhi 110016, India
| | - Prashant Bisht
- Department of Physics, Indian Institute of Technology Delhi, Hauz Khas, New Delhi 110016, India
| | - Che-Hao Liao
- Advanced Semiconductor Laboratory, King Abdullah University of Science and Technology (KAUST), Thuwal 23955-6900, Saudi Arabia
| | - Xiaohang Li
- Advanced Semiconductor Laboratory, King Abdullah University of Science and Technology (KAUST), Thuwal 23955-6900, Saudi Arabia
| | - Ravendra Kumar Varshney
- Department of Physics, Indian Institute of Technology Delhi, Hauz Khas, New Delhi 110016, India
| | - Bodh Raj Mehta
- Department of Physics, Indian Institute of Technology Delhi, Hauz Khas, New Delhi 110016, India
| | - Rajendra Singh
- Department of Physics, Indian Institute of Technology Delhi, Hauz Khas, New Delhi 110016, India
- Nanoscale Research Facility, Indian Institute of Technology Delhi, Hauz Khas, New Delhi 110016, India
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15
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Hadke S, Huang M, Chen C, Tay YF, Chen S, Tang J, Wong L. Emerging Chalcogenide Thin Films for Solar Energy Harvesting Devices. Chem Rev 2021; 122:10170-10265. [PMID: 34878268 DOI: 10.1021/acs.chemrev.1c00301] [Citation(s) in RCA: 16] [Impact Index Per Article: 5.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/29/2022]
Abstract
Chalcogenide semiconductors offer excellent optoelectronic properties for their use in solar cells, exemplified by the commercialization of Cu(In,Ga)Se2- and CdTe-based photovoltaic technologies. Recently, several other chalcogenides have emerged as promising photoabsorbers for energy harvesting through the conversion of solar energy to electricity and fuels. The goal of this review is to summarize the development of emerging binary (Sb2X3, GeX, SnX), ternary (Cu2SnX3, Cu2GeX3, CuSbX2, AgBiX2), and quaternary (Cu2ZnSnX4, Ag2ZnSnX4, Cu2CdSnX4, Cu2ZnGeX4, Cu2BaSnX4) chalcogenides (X denotes S/Se), focusing especially on the comparative analysis of their optoelectronic performance metrics, electronic band structure, and point defect characteristics. The performance limiting factors of these photoabsorbers are discussed, together with suggestions for further improvement. Several relatively unexplored classes of chalcogenide compounds (such as chalcogenide perovskites, bichalcogenides, etc.) are highlighted, based on promising early reports on their optoelectronic properties. Finally, pathways for practical applications of emerging chalcogenides in solar energy harvesting are discussed against the backdrop of a market dominated by Si-based solar cells.
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Affiliation(s)
- Shreyash Hadke
- School of Materials Science and Engineering, Nanyang Technological University, Singapore 639798, Singapore.,Energy Research Institute @ NTU (ERI@N), Interdisciplinary Graduate Programme, Nanyang Technological University, Singapore 637553, Singapore
| | - Menglin Huang
- Key Laboratory for Computational Physical Sciences (MOE), Key State Key Laboratory of ASIC and System and School of Microelectronics, Fudan University, Shanghai 200433, China
| | - Chao Chen
- School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan, Hubei 430074, China.,Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan, Hubei 430074, China
| | - Ying Fan Tay
- School of Materials Science and Engineering, Nanyang Technological University, Singapore 639798, Singapore.,Institute of Materials Research and Engineering (IMRE), Agency of Science, Technology and Research (A*STAR), 2 Fusionopolis Way, Singapore 138634, Singapore
| | - Shiyou Chen
- Key Laboratory for Computational Physical Sciences (MOE), Key State Key Laboratory of ASIC and System and School of Microelectronics, Fudan University, Shanghai 200433, China
| | - Jiang Tang
- School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan, Hubei 430074, China.,Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan, Hubei 430074, China
| | - Lydia Wong
- School of Materials Science and Engineering, Nanyang Technological University, Singapore 639798, Singapore.,Singapore-HUJ Alliance for Research and Enterprise (SHARE), Nanomaterials for Energy and Energy-Water Nexus (NEW), Campus for Research Excellence and Technological Enterprise (CREATE), Singapore 138602, Singapore
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16
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Surface doping of nonmetal atoms enhances photocatalytic performance of monolayer GeSe for degradation of organic pollution. Chem Phys Lett 2021. [DOI: 10.1016/j.cplett.2021.139156] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/22/2022]
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17
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Xu W, Xie Z, Su J, Wang R, Wu X, Xu H. High Anisotropic Optoelectronics in Two Dimensional Layered PbSnX 2 (X = S/Se). J Phys Chem Lett 2021; 12:10574-10580. [PMID: 34694815 DOI: 10.1021/acs.jpclett.1c02876] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
We systematically study the giant anisotropic optoelectronics in layered PbSnX2 (X = S/Se). The highly anisotropic optoelectronics mainly originates from the asymmetric sublattices SnX, resulting in the anisotropy of photoelectronic properties with fascinating visible light absorption range in single-layer and bilayer PbSnX2. We employ uniaxial strain in both the x and y directions and find an indirect-to-direct band gap transition, while the quasiparticle indirect band gap presents excellent linear scaling with biaxial strain in monolayer PbSnX2. We also demonstrate ultrahigh anisotropic mobilities of electrons (μy > μx) and holes (μx > μy) in both single-layer and bilayer PbSnX2 (X = S/Se), and spin-orbit coupling effects and the increase of layer number significantly reduce exciton binding energies and band gaps. Finally, the strong layer dependence of the band structure is clearly seen when the film thickness is less than 4 layers. Our results provide a fundamental understanding of highly anisotropic PbSnX2 (X = S/Se) and show two potential candidates in photoelectric applications.
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Affiliation(s)
- Wangping Xu
- Hunan Institute of Advanced Sensing and Information Technology, Xiangtan University, Xiangtan, Hunan 411105, P. R. China
- Department of Physics, Chongqing University, Chongqing 401331, P. R. China
- Department of Physics and Institute for Quantum Science and Engineering, Southern University of Science and Technology, Shenzhen 518055, P. R. China
| | - Zijuan Xie
- Department of Physics and Institute for Quantum Science and Engineering, Southern University of Science and Technology, Shenzhen 518055, P. R. China
| | - Jun Su
- Department of Physics and Institute for Quantum Science and Engineering, Southern University of Science and Technology, Shenzhen 518055, P. R. China
| | - Rui Wang
- Department of Physics, Chongqing University, Chongqing 401331, P. R. China
| | - Xiaozhi Wu
- Department of Physics, Chongqing University, Chongqing 401331, P. R. China
| | - Hu Xu
- Department of Physics and Institute for Quantum Science and Engineering, Southern University of Science and Technology, Shenzhen 518055, P. R. China
- Guangdong Provincial Key Laboratory of Computational Science and Material Design, Southern University of Science and Technology, Shenzhen 518055, P. R. China
- Shenzhen Key Laboratory of Advanced Quantum Functional Materials and Devices, Shenzhen 518055, P. R. China
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18
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Zhang YY, Zheng YX, Lai JY, Seo JH, Lee KH, Tan CS, An S, Shin SH, Son B, Kim M. High Performance Flexible Visible-Blind Ultraviolet Photodetectors with Two-Dimensional Electron Gas Based on Unconventional Release Strategy. ACS NANO 2021; 15:8386-8396. [PMID: 33908251 DOI: 10.1021/acsnano.0c10374] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
Interdigitated photodetectors (IPDs) based on the two-dimensional electron gas (2DEG) at the AlGaN/GaN interface have gained prominence as high sensitivity ultraviolet (UV) PDs due to their excellent optoelectronic performance. However, most 2DEG-IPDs have been built on rigid substrates, thus limiting the use of 2DEG-IPDs in flexible and wearable applications. In this paper, we have demonstrated high performance flexible AlGaN/GaN 2DEG-IPDs using AlGaN/GaN 2DEG heterostructure membranes created from 8 in. AlGaN/GaN on insulator (AlGaN/GaNOI) substrates. The interdigitated AlGaN/GaN heterostructure has been engineered to reduce dark current by disconnecting the conductive channel at the heterostructure interface. Photocurrent has been also boosted by the escaped carriers from the 2DEG layer. Therefore, the utilization of a 2DEG layer in transferrable AlGaN/GaN heterostructure membranes offers great promises for high performance flexible 2DEG-IPDs for advanced UV detection systems that are critically important in myriad biomedical and environmental applications.
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Affiliation(s)
- Yi-Yu Zhang
- School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, 639798 Singapore, Singapore
| | - Yi-Xiong Zheng
- Department of Materials Design and Innovation, University at Buffalo, The State University of New York, Buffalo, New York 14260, United States
| | - Jun-Yu Lai
- Department of Materials Design and Innovation, University at Buffalo, The State University of New York, Buffalo, New York 14260, United States
| | - Jung-Hun Seo
- Department of Materials Design and Innovation, University at Buffalo, The State University of New York, Buffalo, New York 14260, United States
| | - Kwang Hong Lee
- Low Energy Electronic Systems (LEES), Singapore MIT Alliance for Research and Technology (SMART), 1 Create Way, Singapore 138602 Singapore
| | - Chuan Seng Tan
- School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, 639798 Singapore, Singapore
- Low Energy Electronic Systems (LEES), Singapore MIT Alliance for Research and Technology (SMART), 1 Create Way, Singapore 138602 Singapore
| | - Shu An
- School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, 639798 Singapore, Singapore
| | - Sang-Ho Shin
- School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, 639798 Singapore, Singapore
| | - Bongkwon Son
- School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, 639798 Singapore, Singapore
| | - Munho Kim
- School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, 639798 Singapore, Singapore
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19
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Chakraborty R, Ahmed S, Subrina S. Functionalization of electronic, spin and optical properties of GeSe monolayer by substitutional doping: a first-principles study. NANOTECHNOLOGY 2021; 32:305701. [PMID: 33845470 DOI: 10.1088/1361-6528/abf6ef] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/07/2021] [Accepted: 04/12/2021] [Indexed: 06/12/2023]
Abstract
Substitutional doping has traditionally been used to modulate the existing properties of semiconductors and introduce new exciting properties, especially in two-dimensional materials. In this work, we have investigated the impact of substitutional doping (using group III, IV, V, and VI dopants) on the structural, electronic, spin, and optical properties of GeSe monolayer by using first-principles calculations based on density functional theory. Our calculated binding energies, formation energies and phonon dispersion curves of the doped systems support their stability and hence the feasibility of physical realization. Our results further suggest that switching between metallic and semiconducting states of GeSe monolayer can be controlled by dopant atoms with a different number of valence electrons. The band gap of the semiconducting structures can be tuned within a range of 0.2864 eV to 1.17 eV by substituting with different dopants. In addition, most of the doped structures maintain the low effective mass, 0.20m0to 0.59m0for electron and 0.21m0to 0.52m0for hole, which ensures the enhanced transport properties of GeSe based electronic devices. Moreover, when Ge is substituted with group V dopants, a magnetic moment is introduced in an otherwise non-magnetic GeSe monolayer. The optical absorption coefficient of the doped structures can be significantly improved (>2×) in the visible and infrared regions. These intriguing results would encourage the applications of doped GeSe monolayer in next-generation electronic, optoelectronic and spintronic devices.
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Affiliation(s)
- Rajat Chakraborty
- Department of Electrical and Electronic Engineering, Bangladesh University of Engineering and Technology, Dhaka, 1205, Bangladesh
| | - Shahnewaz Ahmed
- Department of Electrical and Electronic Engineering, Bangladesh University of Engineering and Technology, Dhaka, 1205, Bangladesh
| | - Samia Subrina
- Department of Electrical and Electronic Engineering, Bangladesh University of Engineering and Technology, Dhaka, 1205, Bangladesh
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20
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Hussain M, Jaffery SHA, Ali A, Nguyen CD, Aftab S, Riaz M, Abbas S, Hussain S, Seo Y, Jung J. NIR self-powered photodetection and gate tunable rectification behavior in 2D GeSe/MoSe 2 heterojunction diode. Sci Rep 2021; 11:3688. [PMID: 33574562 PMCID: PMC7878902 DOI: 10.1038/s41598-021-83187-z] [Citation(s) in RCA: 19] [Impact Index Per Article: 6.3] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 09/11/2020] [Accepted: 01/27/2021] [Indexed: 12/20/2022] Open
Abstract
Two-dimensional (2D) heterostructure with atomically sharp interface holds promise for future electronics and optoelectronics because of their multi-functionalities. Here we demonstrate gate-tunable rectifying behavior and self-powered photovoltaic characteristics of novel p-GeSe/n-MoSe2 van der waal heterojunction (vdW HJ). A substantial increase in rectification behavior was observed when the devices were subjected to gate bias. The highest rectification of ~ 1 × 104 was obtained at Vg = - 40 V. Remarkable rectification behavior of the p-n diode is solely attributed to the sharp interface between metal and GeSe/MoSe2. The device exhibits a high photoresponse towards NIR (850 nm). A high photoresponsivity of 465 mAW-1, an excellent EQE of 670%, a fast rise time of 180 ms, and a decay time of 360 ms were obtained. Furthermore, the diode exhibits detectivity (D) of 7.3 × 109 Jones, the normalized photocurrent to the dark current ratio (NPDR) of 1.9 × 1010 W-1, and the noise equivalent power (NEP) of 1.22 × 10-13 WHz-1/2. The strong light-matter interaction stipulates that the GeSe/MoSe2 diode may open new realms in multi-functional electronics and optoelectronics applications.
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Grants
- 20172010106080 The Korea Institute of Energy Technology Evaluation and Planning and the Ministry of Trade, Industry and Energy of the Republic of Korea
- 20172010106080 The Korea Institute of Energy Technology Evaluation and Planning and the Ministry of Trade, Industry and Energy of the Republic of Korea
- 20172010106080 The Korea Institute of Energy Technology Evaluation and Planning and the Ministry of Trade, Industry and Energy of the Republic of Korea
- 20172010106080 The Korea Institute of Energy Technology Evaluation and Planning and the Ministry of Trade, Industry and Energy of the Republic of Korea
- 20172010106080 The Korea Institute of Energy Technology Evaluation and Planning and the Ministry of Trade, Industry and Energy of the Republic of Korea
- 20172010106080 The Korea Institute of Energy Technology Evaluation and Planning and the Ministry of Trade, Industry and Energy of the Republic of Korea
- 20172010106080 The Korea Institute of Energy Technology Evaluation and Planning and the Ministry of Trade, Industry and Energy of the Republic of Korea
- 20172010106080 The Korea Institute of Energy Technology Evaluation and Planning and the Ministry of Trade, Industry and Energy of the Republic of Korea
- 20172010106080 The Korea Institute of Energy Technology Evaluation and Planning and the Ministry of Trade, Industry and Energy of the Republic of Korea
- This research was supported by the Nano Material Technology Development Program, Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education, and the Ministry of science, ICT
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Affiliation(s)
- Muhammad Hussain
- Department of Nanotechnology and Advanced Materials Engineering, and HMC, Sejong University, Seoul, 05006, South Korea
| | - Syed Hassan Abbas Jaffery
- Department of Nanotechnology and Advanced Materials Engineering, and HMC, Sejong University, Seoul, 05006, South Korea
| | - Asif Ali
- Department of Nanotechnology and Advanced Materials Engineering, and HMC, Sejong University, Seoul, 05006, South Korea
| | - Cong Dinh Nguyen
- Department of Nanotechnology and Advanced Materials Engineering, and HMC, Sejong University, Seoul, 05006, South Korea
| | - Sikandar Aftab
- Department of Engineering, Simon Faster University, Burnaby, Canada
| | - Muhammad Riaz
- Department of Nanotechnology and Advanced Materials Engineering, and HMC, Sejong University, Seoul, 05006, South Korea
| | - Sohail Abbas
- Faculty of Engineering and Applied Sciences, Ripah International University, Islamabad, Pakistan
| | - Sajjad Hussain
- Department of Nanotechnology and Advanced Materials Engineering, and HMC, Sejong University, Seoul, 05006, South Korea
| | - Yongho Seo
- Department of Nanotechnology and Advanced Materials Engineering, and HMC, Sejong University, Seoul, 05006, South Korea
| | - Jongwan Jung
- Department of Nanotechnology and Advanced Materials Engineering, and HMC, Sejong University, Seoul, 05006, South Korea.
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21
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He T, Wang Z, Cao R, Li Q, Peng M, Xie R, Huang Y, Wang Y, Ye J, Wu P, Zhong F, Xu T, Wang H, Cui Z, Zhang Q, Gu L, Deng HX, Zhu H, Shan C, Wei Z, Hu W. Extrinsic Photoconduction Induced Short-Wavelength Infrared Photodetectors Based on Ge-Based Chalcogenides. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2021; 17:e2006765. [PMID: 33345467 DOI: 10.1002/smll.202006765] [Citation(s) in RCA: 9] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/29/2020] [Revised: 12/03/2020] [Indexed: 06/12/2023]
Abstract
2D layered photodetectors have been widely researched for intriguing optoelectronic properties but their application fields are limited by the bandgap. Extending the detection waveband can significantly enrich functionalities and applications of photodetectors. For example, after breaking through bandgap limitation, extrinsic Si photodetectors are used for short-wavelength infrared or even long-wavelength infrared detection. Utilizing extrinsic photoconduction to extend the detection waveband of 2D layered photodetectors is attractive and desirable. However, extrinsic photoconduction has yet not been observed in 2D layered materials. Here, extrinsic photoconduction-induced short-wavelength infrared photodetectors based on Ge-based chalcogenides are reported for the first time and the effectiveness of intrinsic point defects are demonstrated. The detection waveband of room-temperature extrinsic GeSe photodetectors with the assistance of Ge vacancies is broadened to 1.6 µm. Extrinsic GeSe photodetectors have an excellent external quantum efficiency (0.5%) at the communication band of 1.31 µm and polarization-resolved capability to subwaveband radiation. Moreover, room-temperature extrinsic GeS photodetectors with a detection waveband to the communication band of 1.55 µm further verify the versatility of intrinsic point defects. This approach provides design strategies to enrich the functionalities of 2D layered photodetectors.
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Affiliation(s)
- Ting He
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yutian Road, Shanghai, 200083, China
- School of Electronic, Electrical and Communication Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Zhen Wang
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yutian Road, Shanghai, 200083, China
- School of Electronic, Electrical and Communication Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Ruyue Cao
- School of Electronic, Electrical and Communication Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China
| | - Qing Li
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yutian Road, Shanghai, 200083, China
- Hangzhou Institute for Advanced Study, University of Chinese Academy of Sciences, Hangzhou, 310024, China
| | - Meng Peng
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yutian Road, Shanghai, 200083, China
| | - Runzhang Xie
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yutian Road, Shanghai, 200083, China
- School of Electronic, Electrical and Communication Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Yan Huang
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yutian Road, Shanghai, 200083, China
| | - Yang Wang
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yutian Road, Shanghai, 200083, China
- State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai, 200433, China
| | - Jiafu Ye
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yutian Road, Shanghai, 200083, China
- School of Electronic, Electrical and Communication Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Peisong Wu
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yutian Road, Shanghai, 200083, China
- School of Electronic, Electrical and Communication Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Fang Zhong
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yutian Road, Shanghai, 200083, China
| | - Tengfei Xu
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yutian Road, Shanghai, 200083, China
| | - Hailu Wang
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yutian Road, Shanghai, 200083, China
- School of Electronic, Electrical and Communication Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Zhuangzhuang Cui
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yutian Road, Shanghai, 200083, China
- School of Electronic, Electrical and Communication Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Qinghua Zhang
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
| | - Lin Gu
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
| | - Hui-Xiong Deng
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China
| | - He Zhu
- Hangzhou Institute for Advanced Study, University of Chinese Academy of Sciences, Hangzhou, 310024, China
| | - Chongxin Shan
- Henan Key Laboratory of Diamond Optoelectronic Materials and Devices, School of Physics and Engineering, Zhengzhou University, Zhengzhou, 450001, China
| | - Zhongming Wei
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China
| | - Weida Hu
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yutian Road, Shanghai, 200083, China
- School of Electronic, Electrical and Communication Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
- Hangzhou Institute for Advanced Study, University of Chinese Academy of Sciences, Hangzhou, 310024, China
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22
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Fu Q, Mo H, Ostrikov K(K, Gu X, Nan H, Xiao S. Controllable synthesis of SnS2 flakes and MoS2/SnS2 heterostructures by confined-space chemical vapor deposition. CrystEngComm 2021. [DOI: 10.1039/d1ce00075f] [Citation(s) in RCA: 4] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 10/21/2022]
Abstract
A halogen salt-assisted confined-space CVD method is used for the controllable synthesis of SnS2 flakes, which are parallel to the substrate and have the characteristics of better crystallinity and fewer S vacancies.
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Affiliation(s)
- Quangui Fu
- Engineering Research Center of IoT Technology Applications (Ministry of Education)
- Department of Electronic Engineering
- Jiangnan University
- Wuxi 214122
- China
| | - Haoxin Mo
- Engineering Research Center of IoT Technology Applications (Ministry of Education)
- Department of Electronic Engineering
- Jiangnan University
- Wuxi 214122
- China
| | - Kostya (Ken) Ostrikov
- School of Chemistry
- Physics and Mechanical Engineering and Institute for Future Environments
- Queensland University of Technology
- Brisbane
- Australia
| | - Xiaofeng Gu
- Engineering Research Center of IoT Technology Applications (Ministry of Education)
- Department of Electronic Engineering
- Jiangnan University
- Wuxi 214122
- China
| | - Haiyan Nan
- Engineering Research Center of IoT Technology Applications (Ministry of Education)
- Department of Electronic Engineering
- Jiangnan University
- Wuxi 214122
- China
| | - Shaoqing Xiao
- Engineering Research Center of IoT Technology Applications (Ministry of Education)
- Department of Electronic Engineering
- Jiangnan University
- Wuxi 214122
- China
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23
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Yu P, Zeng Q, Zhu C, Zhou L, Zhao W, Tong J, Liu Z, Yang G. Ternary Ta 2 PdS 6 Atomic Layers for an Ultrahigh Broadband Photoresponsive Phototransistor. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2021; 33:e2005607. [PMID: 33251704 DOI: 10.1002/adma.202005607] [Citation(s) in RCA: 5] [Impact Index Per Article: 1.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/18/2020] [Revised: 11/13/2020] [Indexed: 06/12/2023]
Abstract
2D noble-transition-metal chalcogenides (NTMCs) are emerging as a promising class of optoelectronic materials due to ultrahigh air stability, large bandgap tunability, and high photoresponse. Here, a new set of 2D NTMC: Ta2 PdS6 atomic layers is developed, displaying the excellent comprehensive optoelectronic performance with an ultrahigh photoresponsivity of 1.42 × 106 A W-1 , detectivity of 7.1 × 1010 Jones and a high photoconductive gain of 2.7 × 106 under laser illumination at a wavelength of 633 nm with a power of 0.025 W m-2 , which is ascribed to a photogating effect via study of the device band profiles. Especially, few-layer Ta2 PdS6 exhibits a good broadband photoresponse, ranging from 450 nm in the ultraviolet region to 1450 nm in the shortwave infrared (SIR) region. Moreover, this material also delivers an impressive electronic performance with electron mobility of ≈25 cm2 V-1 s-1 , Ion /Ioff ratio of 106 , and a one-year air stability, which is better than those of most reported 2D materials. Our studies underscore Ta2 PdS6 as a promising 2D material for nano-electronic and nano-optoelectronic applications.
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Affiliation(s)
- Peng Yu
- State Key Laboratory of Optoelectronic Materials and Technologies, School of Materials Science and Engineering, Sun Yat-sen University, Guangzhou, 510275, P.R. China
| | - Qingsheng Zeng
- School of Materials Science and Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore, 639798, Singapore
| | - Chao Zhu
- School of Materials Science and Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore, 639798, Singapore
| | - Liujiang Zhou
- Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu, 610054, P.R. China
| | - Weina Zhao
- Guangdong Key Laboratory of Environmental Catalysis and Health Risk Control, School of Environmental Science and Engineering, Institute of Environmental Health and Pollution Control, Guangdong University of Technology, Guangzhou, 510006, P.R. China
| | - Jinchao Tong
- School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore, 639798, Singapore
| | - Zheng Liu
- School of Materials Science and Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore, 639798, Singapore
| | - Guowei Yang
- State Key Laboratory of Optoelectronic Materials and Technologies, School of Materials Science and Engineering, Sun Yat-sen University, Guangzhou, 510275, P.R. China
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24
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Sarkar AS, Stratakis E. Recent Advances in 2D Metal Monochalcogenides. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2020; 7:2001655. [PMID: 33173730 PMCID: PMC7610304 DOI: 10.1002/advs.202001655] [Citation(s) in RCA: 20] [Impact Index Per Article: 5.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 05/04/2020] [Revised: 07/24/2020] [Indexed: 06/11/2023]
Abstract
The family of emerging low-symmetry and structural in-plane anisotropic two-dimensional (2D) materials has been expanding rapidly in recent years. As an important emerging anisotropic 2D material, the black phosphorene analog group IVA-VI metal monochalcogenides (MMCs) have been surged recently due to their distinctive crystalline symmetries, exotic in-plane anisotropic electronic and optical response, earth abundance, and environmentally friendly characteristics. In this article, the recent research advancements in the field of anisotropic 2D MMCs are reviewed. At first, the unique wavy crystal structures together with the optical and electronic properties of such materials are discussed. The Review continues with the various methods adopted for the synthesis of layered MMCs including micromechanical and liquid phase exfoliation as well as physical vapor deposition. The last part of the article focuses on the application of the structural anisotropic response of 2D MMCs in field effect transistors, photovoltaic cells nonlinear optics, and valleytronic devices. Besides presenting the significant research in the field of this emerging class of 2D materials, this Review also delineates the existing limitations and discusses emerging possibilities and future prospects.
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Affiliation(s)
- Abdus Salam Sarkar
- Institute of Electronic Structure and LaserFoundation for Research and Technology‐HellasHeraklionCrete700 13Greece
| | - Emmanuel Stratakis
- Institute of Electronic Structure and LaserFoundation for Research and Technology‐HellasHeraklionCrete700 13Greece
- Physics DepartmentUniversity of CreteHeraklionCrete710 03Greece
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25
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Bianca G, Zappia MI, Bellani S, Sofer Z, Serri M, Najafi L, Oropesa-Nuñez R, Martín-García B, Hartman T, Leoncino L, Sedmidubský D, Pellegrini V, Chiarello G, Bonaccorso F. Liquid-Phase Exfoliated GeSe Nanoflakes for Photoelectrochemical-Type Photodetectors and Photoelectrochemical Water Splitting. ACS APPLIED MATERIALS & INTERFACES 2020; 12:48598-48613. [PMID: 32960559 PMCID: PMC8011798 DOI: 10.1021/acsami.0c14201] [Citation(s) in RCA: 19] [Impact Index Per Article: 4.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/06/2020] [Accepted: 09/22/2020] [Indexed: 05/29/2023]
Abstract
Photoelectrochemical (PEC) systems represent powerful tools to convert electromagnetic radiation into chemical fuels and electricity. In this context, two-dimensional (2D) materials are attracting enormous interest as potential advanced photo(electro)catalysts and, recently, 2D group-IVA metal monochalcogenides have been theoretically predicted to be water splitting photocatalysts. In this work, we use density functional theory calculations to theoretically investigate the photocatalytic activity of single-/few-layer GeSe nanoflakes for both the hydrogen evolution reaction (HER) and the oxygen evolution reaction (OER) in pH conditions ranging from 0 to 14. Our simulations show that GeSe nanoflakes with different thickness can be mixed in the form of nanoporous films to act as nanoscale tandem systems, in which the flakes, depending on their thickness, can operate as HER- and/or OER photocatalysts. On the basis of theoretical predictions, we report the first experimental characterization of the photo(electro)catalytic activity of single-/few-layer GeSe flakes in different aqueous media, ranging from acidic to alkaline solutions: 0.5 M H2SO4 (pH 0.3), 1 M KCl (pH 6.5), and 1 M KOH (pH 14). The films of the GeSe nanoflakes are fabricated by spray coating GeSe nanoflakes dispersion in 2-propanol obtained through liquid-phase exfoliation of synthesized orthorhombic (Pnma) GeSe bulk crystals. The PEC properties of the GeSe nanoflakes are used to design PEC-type photodetectors, reaching a responsivity of up to 0.32 AW-1 (external quantum efficiency of 86.3%) under 455 nm excitation wavelength in acidic electrolyte. The obtained performances are superior to those of several self-powered and low-voltage solution-processed photodetectors, approaching that of self-powered commercial UV-Vis photodetectors. The obtained results inspire the use of 2D GeSe in proof-of-concept water photoelectrolysis cells.
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Affiliation(s)
- Gabriele Bianca
- Graphene
Labs, Istituto Italiano di Tecnologia, via Morego 30, 16163, Genova, Italy
- Dipartimento
di Chimica e Chimica Industriale, Università
degli Studi di Genova, via Dodecaneso 31, 16146 Genoa, Italy
| | - Marilena I. Zappia
- BeDimensional
Societa per azioni, via
Albisola 121, 16163 Genova, Italy
- Department
of Physics, University of Calabria, Via P. Bucci cubo 31/C 87036 Rende, Cosenza, Italy
| | | | - Zdeněk Sofer
- Department
of Inorganic Chemistry, University of Chemistry
and Technology Prague, Technická 5, 166 28 Prague 6, Czech Republic
| | - Michele Serri
- Graphene
Labs, Istituto Italiano di Tecnologia, via Morego 30, 16163, Genova, Italy
| | - Leyla Najafi
- BeDimensional
Societa per azioni, via
Albisola 121, 16163 Genova, Italy
| | - Reinier Oropesa-Nuñez
- BeDimensional
Societa per azioni, via
Albisola 121, 16163 Genova, Italy
- Department
of Materials Science and Engineering, Uppsala
University, Box 534, 75121 Uppsala, Sweden
| | - Beatriz Martín-García
- Graphene
Labs, Istituto Italiano di Tecnologia, via Morego 30, 16163, Genova, Italy
- CIC
nanoGUNE, 20018 Donostia-San Sebastian, Spain
| | - Tomáš Hartman
- Department
of Inorganic Chemistry, University of Chemistry
and Technology Prague, Technická 5, 166 28 Prague 6, Czech Republic
| | - Luca Leoncino
- Electron
Microscopy Facility, Istituto Italiano di
Tecnologia, via Morego 30, 16163 Genova, Italy
| | - David Sedmidubský
- Department
of Inorganic Chemistry, University of Chemistry
and Technology Prague, Technická 5, 166 28 Prague 6, Czech Republic
| | - Vittorio Pellegrini
- Graphene
Labs, Istituto Italiano di Tecnologia, via Morego 30, 16163, Genova, Italy
- BeDimensional
Societa per azioni, via
Albisola 121, 16163 Genova, Italy
| | - Gennaro Chiarello
- Department
of Physics, University of Calabria, Via P. Bucci cubo 31/C 87036 Rende, Cosenza, Italy
| | - Francesco Bonaccorso
- Graphene
Labs, Istituto Italiano di Tecnologia, via Morego 30, 16163, Genova, Italy
- BeDimensional
Societa per azioni, via
Albisola 121, 16163 Genova, Italy
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26
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Zhang B, Fu X, Song L, Wu X. Computational Screening toward Hydrogen Evolution Reaction by the Introduction of Point Defects at the Edges of Group IVA Monochalcogenides: A First-Principles Study. J Phys Chem Lett 2020; 11:7664-7671. [PMID: 32835487 DOI: 10.1021/acs.jpclett.0c02047] [Citation(s) in RCA: 8] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
Exploring materials with high hydrogen evolution reaction (HER) performance is of importance for the development of clean hydrogen energy, and the defects on the surfaces of catalysts are essential. In this work, we evaluate the HER performance among group IVA monochalcogenides MXs (M = Ge/Sn, X = S/Se) with M/X point defects on the edges. Compared with basal planes and bare edges, the GeS edge with Ge vacancy (ΔGH* = 0.016 eV), GeSe edge with Se vacancy (ΔGH* = 0.073 eV), and SnSe edge with Sn vacancy (ΔGH* = -0.037 eV) hold the best HER performances, which are comparable to or even better than the value for Pt (-0.07 eV). Furthermore, the relationships between ΔGH* and p-band centers of considered models are summarized. The stability of proposed electrocatalysts are analyzed by vacancy-formation energy and strain engineering. In summary, the HER performance of MXs is greatly improved by introduction of point defects at the edges, which is promising for their use as electrocatalysts for the conversion and storage of energy in the future.
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Affiliation(s)
- Bo Zhang
- State Key Laboratory of Information Photonics and Optical Communications, and School of Science, Beijing University of Posts and Telecommunications, Beijing 100876, P. R. China
- Hefei National Laboratory for Physical Sciences at the Microscale, School of Chemistry and Materials Sciences, CAS Key Laboratory of Materials for Energy Conversion, CAS Center for Excellence in Nanoscience, University of Science and Technology of China, Hefei 230026, P. R. China
| | - Xiuli Fu
- State Key Laboratory of Information Photonics and Optical Communications, and School of Science, Beijing University of Posts and Telecommunications, Beijing 100876, P. R. China
| | - Li Song
- Natl Synchrotron Radiat Lab, CAS Ctr Excellence Nanosci, CAS Key Lab Strongly Coupled Quantum Matter Phys, Univ Sci & Technol China, Hefei 230029, Anhui P. R. China
| | - Xiaojun Wu
- Hefei National Laboratory for Physical Sciences at the Microscale, School of Chemistry and Materials Sciences, CAS Key Laboratory of Materials for Energy Conversion, CAS Center for Excellence in Nanoscience, University of Science and Technology of China, Hefei 230026, P. R. China
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27
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Lan C, Shi Z, Cao R, Li C, Zhang H. 2D materials beyond graphene toward Si integrated infrared optoelectronic devices. NANOSCALE 2020; 12:11784-11807. [PMID: 32462161 DOI: 10.1039/d0nr02574g] [Citation(s) in RCA: 19] [Impact Index Per Article: 4.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/13/2023]
Abstract
Since the discovery of graphene in 2004, it has become a worldwide hot topic due to its fascinating properties. However, the zero band gap and weak light absorption of graphene strictly restrict its applications in optoelectronic devices. In this regard, semiconducting two-dimensional (2D) materials are thought to be promising candidates for next-generation optoelectronic devices. Infrared (IR) light has gained intensive attention due to its vast applications, including night vision, remote sensing, target acquisition, optical communication, etc. Consequently, the generation, modulation, and detection of IR light are crucial for practical applications. Due to the van der Waals interaction between 2D materials and Si, the lattice mismatch of 2D materials and Si can be neglected; consequently, the integration process can be achieved easily. Herein, we review the recent progress of semiconducting 2D materials in IR optoelectronic devices. Firstly, we introduce the background and motivation of the review. Then, the suitable materials for IR applications are presented, followed by a comprehensive review of the applications of 2D materials in light emitting devices, optical modulators, and photodetectors. Finally, the problems encountered and further developments are summarized. We believe that milestone investigations of IR optoelectronics based on 2D materials beyond graphene will emerge soon, which will bring about great industrial revelations in 2D material-based integrated nanodevice commercialization.
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Affiliation(s)
- Changyong Lan
- State Key Laboratory of Electronic Thin Films and Integrated Devices, and School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 610054, China.
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28
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Hussain M, Aftab S, Jaffery SHA, Ali A, Hussain S, Cong DN, Akhtar R, Seo Y, Eom J, Gautam P, Noh H, Jung J. Asymmetric electrode incorporated 2D GeSe for self-biased and efficient photodetection. Sci Rep 2020; 10:9374. [PMID: 32523025 PMCID: PMC7286883 DOI: 10.1038/s41598-020-66263-8] [Citation(s) in RCA: 25] [Impact Index Per Article: 6.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 02/26/2020] [Accepted: 04/21/2020] [Indexed: 11/09/2022] Open
Abstract
2D layered germanium selenide (GeSe) with p-type conductivity is incorporated with asymmetric contact electrode of chromium/Gold (Cr/Au) and Palladium/Gold (Pd/Au) to design a self-biased, high speed and an efficient photodetector. The photoresponse under photovoltaic effect is investigated for the wavelengths of light (i.e. ~220, ~530 and ~850 nm). The device exhibited promising figures of merit required for efficient photodetection, specifically the Schottky barrier diode is highly sensitive to NIR light irradiation at zero voltage with good reproducibility, which is promising for the emergency application of fire detection and night vision. The high responsivity, detectivity, normalized photocurrent to dark current ratio (NPDR), noise equivalent power (NEP) and response time for illumination of light (~850 nm) are calculated to be 280 mA/W, 4.1 × 109 Jones, 3 × 107 W−1, 9.1 × 10−12 WHz−1/2 and 69 ms respectively. The obtained results suggested that p-GeSe is a novel candidate for SBD optoelectronics-based technologies.
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Affiliation(s)
- Muhammad Hussain
- Department of Nanotechnology and Advanced Materials Engineering, and HMC, Sejong University, Seoul, 05006, South Korea
| | - Sikandar Aftab
- Department of Physics & Astronomy and Graphene Research Institute-Texas Photonics Center International Research Center (GRI-TPC IRC), Sejong University, Seoul, 05006, Korea
| | - Syed Hassan Abbas Jaffery
- Department of Nanotechnology and Advanced Materials Engineering, and HMC, Sejong University, Seoul, 05006, South Korea
| | - Asif Ali
- Department of Nanotechnology and Advanced Materials Engineering, and HMC, Sejong University, Seoul, 05006, South Korea
| | - Sajjad Hussain
- Department of Nanotechnology and Advanced Materials Engineering, and HMC, Sejong University, Seoul, 05006, South Korea
| | - Dinh Nguyen Cong
- Department of Nanotechnology and Advanced Materials Engineering, and HMC, Sejong University, Seoul, 05006, South Korea
| | - Raheel Akhtar
- Department of Electrical Engineering University of Lahore, Islamabad, Pakistan
| | - Yongho Seo
- Department of Nanotechnology and Advanced Materials Engineering, and HMC, Sejong University, Seoul, 05006, South Korea
| | - Jonghwa Eom
- Department of Physics & Astronomy and Graphene Research Institute-Texas Photonics Center International Research Center (GRI-TPC IRC), Sejong University, Seoul, 05006, Korea
| | - Praveen Gautam
- Department of Physics & Astronomy and Graphene Research Institute-Texas Photonics Center International Research Center (GRI-TPC IRC), Sejong University, Seoul, 05006, Korea
| | - Hwayong Noh
- Department of Physics & Astronomy and Graphene Research Institute-Texas Photonics Center International Research Center (GRI-TPC IRC), Sejong University, Seoul, 05006, Korea
| | - Jongwan Jung
- Department of Nanotechnology and Advanced Materials Engineering, and HMC, Sejong University, Seoul, 05006, South Korea.
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29
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Zhang M, Chen H, Wang J, Wang Z, Zhang J, Li J, He T, Yin J, Yan P, Ruan S. Few-layer metal monochalcogenide saturable absorbers for high-energy Q-switched pulse generation. NANOTECHNOLOGY 2020; 31:205204. [PMID: 32015224 DOI: 10.1088/1361-6528/ab7251] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
Two-dimensional layered materials have been widely utilized as nonlinear absorption materials to transfer continue-wave into pulse trains in fiber laser systems. Here, we prepare robust GaSe/GeSe composites with high power bearing capacity as saturable absorbers (SAs) and then investigate their nonlinear optical properties via broadband Z-scan measurement at 800 nm and 1550 nm, respectively. The modulation depths of GaSe/GeSe based SAs are measured to be 11.97% and 7.69% at 1550 nm. After incorporating the GaSe/GeSe SAs into an Erbium-doped fiber laser cavity, passively Q-switched pulse trains could be obtained with repetition rates changing from 83.58 to 136.78 kHz (70.41 to 161.65 kHz). The maximum output power and pulse energy are 52.1 mW/370.67 nJ (GaSe) and 21.6 mW/133.74 nJ (GeSe) under the maximum pump power of 600 mW. The results indicate that GaSe and GeSe possess outstanding thermal stability and could be employed as remarkable saturable absorption materials for high-energy pulses generation.
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Affiliation(s)
- Mengyu Zhang
- Shenzhen Key Laboratory of Laser Engineering, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, People's Republic of China
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30
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Li X, Zhang X, Lv X, Pang J, Lei L, Liu Y, Peng Y, Xiang G. Synthesis and photoluminescence of high density GeSe triangular nanoplate arrays on Si substrates. NANOTECHNOLOGY 2020; 31:285702. [PMID: 32244239 DOI: 10.1088/1361-6528/ab8668] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
We have grown germanium selenide (GeSe) triangular nanoplate arrays (TNAs) with a high density (3.82 × 106 mm-2) on the Si (111) substrate using a simple thermal evaporation method. The thickness and trilateral lengths of a single triangular nanoplate were statistically estimated by atomic force microscopy as 44 nm, 365 nm, 458 nm and 605 nm, respectively. Transmission electron microscopy (TEM) images and x-ray diffraction patterns show that the TNAs were composed of single crystalline GeSe phase. The Se-related defects in the lattice were also revealed by TEM images and Raman vibration modes. Unlike previously reported GeSe compounds, the GeSe TNAs exhibited temperature-dependent photoluminescence (PL). The PL peak (1.25 eV) of the TNAs at 5 K was in the gaps between those of GeSe monolayers and a few hundred thick films, revealing a close relationship between the PL peak and the thickness of GeSe. The high-density structure and temperature-dependent PL of the TNAs on the Si substrate may be useful for temperature controllable semiconductor nanodevices.
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Affiliation(s)
- Xueyan Li
- College of Physics, Sichuan University, Chengdu 610064, People's Republic of China
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31
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Zhao F, Luo X, Liu L, Lv J, Fan X, Qiao X, Xu Y, Kienle L, Zhang X, Qian G. Visible-NIR Photodetectors Based on Low-Dimensional GeSe Micro-Crystals: Designed Morphology and Improved Photoresponsivity. Chemphyschem 2020; 21:397-405. [PMID: 31944536 DOI: 10.1002/cphc.201901217] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 12/24/2019] [Revised: 01/13/2020] [Indexed: 11/07/2022]
Abstract
GeSe micro-sheets and micro-belts have been synthesized by a facile one-pot wet chemical method in 1-octadecene solvent and oleic acid solvent, respectively. The adsorption of more oleic acid molecules on the (002) plane promoted growth along [010] direction of the GeSe micro-belts and limited carrier transport in this direction, resulting in higher carrier concentration and mobility of the GeSe micro-belts. The performance of the photodetectors based on the single GeSe micro-sheet and the single GeSe micro-belt was investigated under illumination at 532 nm, 980 nm and 1319 nm. Both, photodetectors based on a single GeSe micro-sheet and a single GeSe micro-belt, exhibit a high photoresponse, short response/recovery times, and long-term durability. Moreover, the photodetector based on a single GeSe micro-belt displays a broadband response with a high responsivity (5562 A/W at 532 nm, 1546 A/W at 980 nm) and detectivity (3.01×1012 Jones at 532 nm, 8.38×1011 Jones at 980 nm). These excellent characteristics render single GeSe micro-belts very interesting for use as highly efficient photodetectors, especially in the NIR region.
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Affiliation(s)
- Feiyu Zhao
- State Key Laboratory of Silicon Materials & School of Materials Science and Engineering, Zhejiang University, Hangzhou, 310027, P. R. China
| | - Xue Luo
- State Key Laboratory of Silicon Materials & School of Materials Science and Engineering, Zhejiang University, Hangzhou, 310027, P. R. China
| | - Lixiang Liu
- School of Information Science and Electronic Engineering, Zhejiang University, Hangzhou, 310027, P. R. China
| | - Jianhang Lv
- School of Information Science and Electronic Engineering, Zhejiang University, Hangzhou, 310027, P. R. China
| | - Xianping Fan
- State Key Laboratory of Silicon Materials & School of Materials Science and Engineering, Zhejiang University, Hangzhou, 310027, P. R. China
| | - Xvsheng Qiao
- State Key Laboratory of Silicon Materials & School of Materials Science and Engineering, Zhejiang University, Hangzhou, 310027, P. R. China
| | - Yang Xu
- State Key Laboratory of Silicon Materials & School of Materials Science and Engineering, Zhejiang University, Hangzhou, 310027, P. R. China.,School of Information Science and Electronic Engineering, Zhejiang University, Hangzhou, 310027, P. R. China
| | - Lorenz Kienle
- Institute for Material Science Synthesis and Real Structure, Christian Albrechts University Kiel, Kaiserstr. 2, 24143, Kiel, Germany
| | - Xianghua Zhang
- Laboratory of Glasses and Ceramics Institute of Chemistry, CNRS-Université de Rennes I Campus de Beaulieu, 35042, Rennes cedex, France
| | - Guodong Qian
- State Key Laboratory of Silicon Materials & School of Materials Science and Engineering, Zhejiang University, Hangzhou, 310027, P. R. China
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32
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Kennes DM, Xian L, Claassen M, Rubio A. One-dimensional flat bands in twisted bilayer germanium selenide. Nat Commun 2020; 11:1124. [PMID: 32111848 PMCID: PMC7048812 DOI: 10.1038/s41467-020-14947-0] [Citation(s) in RCA: 24] [Impact Index Per Article: 6.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 06/18/2019] [Accepted: 02/06/2020] [Indexed: 12/02/2022] Open
Abstract
Experimental advances in the fabrication and characterization of few-layer materials stacked at a relative twist of small angle have recently shown the emergence of flat energy bands. As a consequence electron interactions become relevant, providing inroads into the physics of strongly correlated two-dimensional systems. Here, we demonstrate by combining large scale ab initio simulations with numerically exact strong correlation approaches that an effective one-dimensional system emerges upon stacking two twisted sheets of GeSe, in marked contrast to all moiré systems studied so far. This not only allows to study the necessarily collective nature of excitations in one dimension, but can also serve as a promising platform to scrutinize the crossover from two to one dimension in a controlled setup by varying the twist angle, which provides an intriguing benchmark with respect to theory. We thus establish twisted bilayer GeSe as an intriguing inroad into the strongly correlated physics of lowdimensional systems.
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Affiliation(s)
- D M Kennes
- Institut für Theorie der Statistischen Physik, RWTH Aachen University and JARA-Fundamentals of Future Information Technology, 52056, Aachen, Germany.
- Center for Free Electron Laser Science, Max Planck Institute for the Structure and Dynamics of Matter, 22761, Hamburg, Germany.
| | - L Xian
- Center for Free Electron Laser Science, Max Planck Institute for the Structure and Dynamics of Matter, 22761, Hamburg, Germany
| | - M Claassen
- Center for Computational Quantum Physics, Simons Foundation Flatiron Institute, New York, NY, 10010, USA
| | - A Rubio
- Center for Free Electron Laser Science, Max Planck Institute for the Structure and Dynamics of Matter, 22761, Hamburg, Germany.
- Center for Computational Quantum Physics, Simons Foundation Flatiron Institute, New York, NY, 10010, USA.
- Nano-Bio Spectroscopy Group, Departamento de Fisica de Materiales, Universidad del País Vasco, UPV/EHU-20018, San Sebastián, Spain.
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33
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Xie Y, Liang F, Chi S, Wang D, Zhong K, Yu H, Zhang H, Chen Y, Wang J. Defect Engineering of MoS 2 for Room-Temperature Terahertz Photodetection. ACS APPLIED MATERIALS & INTERFACES 2020; 12:7351-7357. [PMID: 31958008 DOI: 10.1021/acsami.9b21671] [Citation(s) in RCA: 19] [Impact Index Per Article: 4.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
Two-dimensional (2D) materials have exotic intrinsic electronic band structures and are considered as revolutionary foundations for novel nanodevices. Band engineering of 2D materials may pave a new avenue to overcome numerous challenges in modern technologies, such as room temperature (RT) photodetection of light with photon energy below their band gaps. Here, we reported the pioneering RT MoS2-based photodetection in the terahertz (THz) region via introducing Mo4+ and S2- vacancies for rational band gap engineering. Both the generation and transport of extra carriers, driven by THz electromagnetic radiations, were regulated by the vacancy concentration as well as the resistivity of MoS2 samples. Utilizing the balance between the carrier concentration fluctuation and carrier-scattering probability, a high RT photoresponsivity of 10 mA/W at 2.52 THz was realized in an Mo-vacancy-rich MoS2.19 sample. This work overcomes the challenge in the excessive dark current of RT THz detection and offers a convenient way for further optoelectronic and photonic devices based on band gap-engineered 2D materials.
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Affiliation(s)
- Ying Xie
- State Key Laboratory of Crystal Materials and Institute of Crystal Materials , Shandong University , Jinan 250100 , China
| | - Fei Liang
- State Key Laboratory of Crystal Materials and Institute of Crystal Materials , Shandong University , Jinan 250100 , China
| | - Shumeng Chi
- State Key Laboratory of Crystal Materials and Institute of Crystal Materials , Shandong University , Jinan 250100 , China
| | - Dong Wang
- School of Physics , Shandong University , Jinan 250100 , China
| | - Kai Zhong
- Key Laboratory of Opto-electronics Information Technology (Ministry of Education) , Tianjin University , Tianjin 300072 , China
| | - Haohai Yu
- State Key Laboratory of Crystal Materials and Institute of Crystal Materials , Shandong University , Jinan 250100 , China
| | - Huaijin Zhang
- State Key Laboratory of Crystal Materials and Institute of Crystal Materials , Shandong University , Jinan 250100 , China
| | - Yanxue Chen
- School of Physics , Shandong University , Jinan 250100 , China
| | - Jiyang Wang
- State Key Laboratory of Crystal Materials and Institute of Crystal Materials , Shandong University , Jinan 250100 , China
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Titanium-doped stainless steel nanotubes for the photocatalytic degradation of an organic compound. Catal Today 2020. [DOI: 10.1016/j.cattod.2018.09.021] [Citation(s) in RCA: 7] [Impact Index Per Article: 1.8] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/23/2022]
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35
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Li H, Xu P, Lu J. Sub-10 nm tunneling field-effect transistors based on monolayer group IV mono-chalcogenides. NANOSCALE 2019; 11:23392-23401. [PMID: 31793968 DOI: 10.1039/c9nr07590a] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
The development of air-stable channels with a high on-state current (Ion) is in high demand for the feasible application of TFETs. Monolayer group IV mono-chalcogenides (i.e., GeS, GeSe, SnS, and SnSe), as emerging air-stable atomic-thin semiconductors, are potential channels for sub-10 nm tunneling field-effect transistors due to their high carrier mobility and anisotropic electronic properties. Herein, we investigated the performances of sub-10 nm monolayer (ML) group IV mono-chalcogenide TFETs using ab initio quantum transport simulation. The ML GeSe TFET exhibited the best performance with regards to both high Ion and low leakage current (Ileak) among the four devices, followed by the ML SnSe TFET with a high Ion. The Ion of the optimal ML GeSe TFET with a physical gate length of Lg = 10 nm surpasses the International Technology Roadmap for Semiconductors (ITRS, 2013 Edition) requirements for high-performance (HP) and low-power (LP) devices, simultaneously, and that of the ML SnSe TFET with Lg = 10 nm surpasses the requirement of ITRS HP devices. In combination with our former works, we suggest an Eg of 0.77-1.19 eV and of 0.11-0.15m0 to search for competitive 2D channels with a high Ion for HP application in TFET devices with a planar homogeneous p-i-n architecture.
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Affiliation(s)
- Hong Li
- College of Mechanical and Material Engineering, North China University of Technology, Beijing 100144, P. R. China.
| | - Peipei Xu
- College of Mechanical and Material Engineering, North China University of Technology, Beijing 100144, P. R. China.
| | - Jing Lu
- State Key Laboratory of Mesoscopic Physics and Department of Physics, Peking University, Beijing 100871, P. R. China and Collaborative Innovation Center of Quantum Matter, Beijing 100871, P. R. China and Beijing Key Laboratory for Magnetoelectric Materials and Devices, Peking University, Beijing 100871, P. R. China.
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36
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Zhao H, Yang Y, Wang C, Zhou D, Shi X, Li Y, Mao Y. Fast and Broadband Photoresponse of a Few-Layer GeSe Field-Effect Transistor with Direct Band Gaps. ACS APPLIED MATERIALS & INTERFACES 2019; 11:38031-38038. [PMID: 31537059 DOI: 10.1021/acsami.9b11132] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.6] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
Few-to-monolayer germanium selenide, a new IV-VI group layered material recently fabricated by mechanical exfoliation and subsequent laser thinning, is promising in very fast and broadband optoelectronic applications for its excellent stability, complicated band structures, inert surface properties, and being a natural p-type semiconductor. However, large-scale production of such few-layer GeSe devices with superior performance is still in early stages. In this study, field-effect transistors made of few-layer GeSe with direct band gaps are fabricated. Transistor performance with Schottky contact characteristics is measured at room temperature. A field-effect mobility of 4 cm2/(V s) and drain currents modulated both by holes and electrons are measured. Photoresponses as a function of illumination wavelength, power, and frequency are characterized. The few-layer GeSe transistor shows photoresponse to the illumination wavelengths from visible up to 1400 nm and a photoresponse rise (fall) time of 13 μs (19 μs), demonstrating very broadband and fast detection. The ambipolar behavior and the photoresponse characteristics demonstrate great potential of few-layer GeSe for applications in highly stable, very fast, and very broadband optoelectronic devices.
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Affiliation(s)
- Hongquan Zhao
- Chongqing Institute of Green and Intelligent Technology , Chinese Academy of Sciences , Chongqing 400714 , China
| | - Yuhui Yang
- Chongqing Institute of Green and Intelligent Technology , Chinese Academy of Sciences , Chongqing 400714 , China
- University of Chinese Academy of Sciences , Beijing 100064 , China
| | - Chunxiang Wang
- Chongqing Institute of Green and Intelligent Technology , Chinese Academy of Sciences , Chongqing 400714 , China
| | - Dahua Zhou
- Chongqing Institute of Green and Intelligent Technology , Chinese Academy of Sciences , Chongqing 400714 , China
| | - Xuan Shi
- Chongqing Institute of Green and Intelligent Technology , Chinese Academy of Sciences , Chongqing 400714 , China
| | - Yuzhi Li
- Chongqing Institute of Green and Intelligent Technology , Chinese Academy of Sciences , Chongqing 400714 , China
| | - Yuliang Mao
- Hunan Key Laboratory for Micro-Nano Energy Materials and Devices, School of Physics and Optoelectronic Engineering , Xiangtan University , Hunan 411105 , People's Republic of China
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Jia Y, Li Z, Saeed M, Tang J, Cai H, Xiang Y. Kerr Nonlinearity in germanium selenide nanoflakes measured by Z-scan and spatial self-phase modulation techniques and its applications in all-optical information conversion. OPTICS EXPRESS 2019; 27:20857-20873. [PMID: 31510174 DOI: 10.1364/oe.27.020857] [Citation(s) in RCA: 7] [Impact Index Per Article: 1.4] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/17/2019] [Accepted: 06/20/2019] [Indexed: 06/10/2023]
Abstract
Germanium selenide (GeSe) has attracted considerable research interest due to its unique photoelectric characteristics: high abundance occurrence, low toxicity, high stability, and environmentally sustainable. To the best of our knowledge, less literature is available on the nonlinear optical (NLO) properties of GeSe and on its significance of the electronic structure. In this work, the GeSe nanoflake ethanol suspensions have been studied by using liquid phase exfoliation method and then characterized by Raman, transmission electron microscopy (TEM), transmittance and atomic force microscopy (AFM). The NLO properties of GeSe suspensions with different concentration are investigated by Z-scan and spatial self-phase modulation (SSPM) methods with continuous wave laser, which are coherent with the parameter nonlinear refractive index n2 and the third order nonlinear polarizabilities χ(3). The nonlinear refractive index n2 of GeSe dispersions basically occur in the order of 10-9 cm2/W for Z-scan methods and 10-6 cm2/W for SSPM technique, whereas the third-order nonlinear polarizabilities χ(3) total are within the range of 10-6 esu for SSPM method. On the basis of these substantial characteristics of the NLO response and high stability of the 2D GeSe, we have experimentally studied the applications of the GeSe suspensions on all-optical information conversion technique.
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Hu X, Huang P, Liu K, Jin B, Zhang X, Zhang X, Zhou X, Zhai T. Salt-Assisted Growth of Ultrathin GeSe Rectangular Flakes for Phototransistors with Ultrahigh Responsivity. ACS APPLIED MATERIALS & INTERFACES 2019; 11:23353-23360. [PMID: 31187617 DOI: 10.1021/acsami.9b06425] [Citation(s) in RCA: 6] [Impact Index Per Article: 1.2] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/09/2023]
Abstract
Two-dimensional (2D) GeSe is an important IVA-VIA semiconductor for future applications in electronics and optoelectronics because of its high absorption coefficient, mobility, and photoresponsivity. However, the controllable synthesis of 2D GeSe flakes is still a huge problem. Here, high-quality single-crystalline ultrathin 2D GeSe flakes are synthesized by a salt-assisted chemical vapor deposition method. The flakes tend to grow along the [010] crystal orientation presenting a rectangular shape with a thickness down to 5 nm. Then, the electrical and optoelectronic properties have been systematically investigated. A thickness-dependent Schottky barrier is shown in GeSe field-effect transistors. The p-type conductivity of GeSe is mainly caused by the Ge deficiency, which is proven by a variable-temperature experiment and theoretical calculations. In addition, the phototransistors based on as-grown GeSe flakes present an ultrahigh responsivity of 1.8 × 104 A/W and an excellent external quantum efficiency of 4.2 × 106%.
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Affiliation(s)
- Xiaozong Hu
- State Key Laboratory of Material Processing and Die and Mould Technology, School of Materials Science and Engineering , Huazhong University of Science and Technology (HUST) , Wuhan 430074 , P. R. China
| | - Pu Huang
- Shenzhen Key Laboratory of Flexible Memory Materials and Devices, College of Electronic Science and Technology , Shenzhen University , Nanhai Avenue 3688 , Shenzhen , Guangdong 518060 , P. R. China
| | - Kailang Liu
- State Key Laboratory of Material Processing and Die and Mould Technology, School of Materials Science and Engineering , Huazhong University of Science and Technology (HUST) , Wuhan 430074 , P. R. China
| | - Bao Jin
- State Key Laboratory of Material Processing and Die and Mould Technology, School of Materials Science and Engineering , Huazhong University of Science and Technology (HUST) , Wuhan 430074 , P. R. China
| | - Xun Zhang
- State Key Laboratory of Material Processing and Die and Mould Technology, School of Materials Science and Engineering , Huazhong University of Science and Technology (HUST) , Wuhan 430074 , P. R. China
| | - Xiuwen Zhang
- Shenzhen Key Laboratory of Flexible Memory Materials and Devices, College of Electronic Science and Technology , Shenzhen University , Nanhai Avenue 3688 , Shenzhen , Guangdong 518060 , P. R. China
| | - Xing Zhou
- State Key Laboratory of Material Processing and Die and Mould Technology, School of Materials Science and Engineering , Huazhong University of Science and Technology (HUST) , Wuhan 430074 , P. R. China
| | - Tianyou Zhai
- State Key Laboratory of Material Processing and Die and Mould Technology, School of Materials Science and Engineering , Huazhong University of Science and Technology (HUST) , Wuhan 430074 , P. R. China
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39
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Wang F, Zhang Y, Gao Y, Luo P, Su J, Han W, Liu K, Li H, Zhai T. 2D Metal Chalcogenides for IR Photodetection. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2019; 15:e1901347. [PMID: 31111680 DOI: 10.1002/smll.201901347] [Citation(s) in RCA: 47] [Impact Index Per Article: 9.4] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/14/2019] [Revised: 04/16/2019] [Indexed: 05/25/2023]
Abstract
Infrared (IR) photodetectors are finding diverse applications in imaging, information communication, military, etc. 2D metal chalcogenides (2DMCs) have attracted increasing interest in view of their unique structures and extraordinary physical properties. They have demonstrated outstanding IR detection performance including high responsivity and detectivity, high on/off ratio, fast response rate, stable room temperature operability, and good mechanical flexibility, which has opened up a new prospect in next-generation IR photodetectors. This Review presents a comprehensive summary of recent progress in advanced IR photodetectors based on 2DMCs. The rationale of the photodetectors containing photocurrent generation mechanisms and performance parameters are briefly introduced. The device performances of 2DMCs-based IR photodetectors are also systematically summarized, and some representative achievements are highlighted as well. Finally, conclusions and outlooks are delivered as a guideline for this thriving field.
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Affiliation(s)
- Fakun Wang
- State Key Laboratory of Material Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China
| | - Yue Zhang
- State Key Laboratory of Material Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China
| | - Yu Gao
- State Key Laboratory of Material Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China
| | - Peng Luo
- State Key Laboratory of Material Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China
| | - Jianwei Su
- State Key Laboratory of Material Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China
| | - Wei Han
- State Key Laboratory of Material Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China
| | - Kailang Liu
- State Key Laboratory of Material Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China
| | - Huiqiao Li
- State Key Laboratory of Material Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China
| | - Tianyou Zhai
- State Key Laboratory of Material Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China
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40
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Hu Z, Ding Y, Hu X, Zhou W, Yu X, Zhang S. Recent progress in 2D group IV-IV monochalcogenides: synthesis, properties and applications. NANOTECHNOLOGY 2019; 30:252001. [PMID: 30776787 DOI: 10.1088/1361-6528/ab07d9] [Citation(s) in RCA: 39] [Impact Index Per Article: 7.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/09/2023]
Abstract
Coordination-related, 2D structural phase transitions are a fascinating facet of 2D materials with structural degeneracy. Phosphorene and its new phases, exhibiting unique electronic properties, have received considerable attention. The 2D group IV-IV monochalcogenides (i.e. GeS, GeSe, SnS and SnSe) like black phosphorous possess puckered layered orthorhombic structure. The 2D group IV-IV monochalcogenides with advantages of earth-abundance, less toxicity, environmental compatibility and chemical stability, can be widely used in optoelectronics, piezoelectrics, photodetectors, sensors, Li-batteries and thermoelectrics. In this review, we summarized recent research progress in theory and experiment, which studies the fundamental properties, applications and fabrication of 2D group IV-IV monochalcogenides and their new phases, and brings new perspectives and challenges for the future of this emerging field.
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Affiliation(s)
- Ziyu Hu
- College of Science, Beijing University of Chemical Technology, Beijing 100029, People's Republic of China
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41
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Garg M, Tak BR, Rao VR, Singh R. Giant UV Photoresponse of GaN-Based Photodetectors by Surface Modification Using Phenol-Functionalized Porphyrin Organic Molecules. ACS APPLIED MATERIALS & INTERFACES 2019; 11:12017-12026. [PMID: 30821954 DOI: 10.1021/acsami.8b20694] [Citation(s) in RCA: 8] [Impact Index Per Article: 1.6] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/09/2023]
Abstract
Organic molecular monolayers (MoLs) have been used for improving the performance of various electronic device structures. In this work, the concept of organic molecular surface modification is applied for improving the performance of GaN-based metal-semiconductor-metal (MSM) ultraviolet (UV) photodetectors (PDs). Organic molecules of phenol-functionalized metallated porphyrin (hydroxyl-phenyl-zinc-tetra-phenyl-porphyrin (Zn-TPPOH)) were adsorbed on GaN, and Ni/Zn-TPPOH/GaN/Zn-TPPOH/Ni PD structures were fabricated. This process was beneficial in two ways: first, the reverse-bias dark current was reduced by 1000 times, and second, the photocurrent was enhanced by ∼100 times, in comparison to the dark and photocurrent values obtained for Ni/GaN/Ni MSM PDs, at high voltages of ±10 V. The responsivity of the devices was increased from 0.22 to 4.14 kA/W at 5 μW/cm2 optical power density at -10 V bias and at other voltages also. In addition to this, other PD parameters such as photo-to-dark current ratio and UV-to-visible rejection ratio were also enhanced. The spectral selectivity of the PDs was improved, which means that the molecularly modified devices became more responsive to UV spectral region and less responsive to visible spectral region, in comparison to bare GaN-based devices. Photoluminescence measurements, power-dependent photocurrent characteristics, and time-resolved photocurrent measurements revealed that the MoL was passivating the defect-related states on GaN. In addition, Kelvin probe force microscopy showed that the MoL was also playing with the surface charge (due to surface states) on GaN, leading to increased Schottky barrier height in dark conditions. Resultant to both these phenomena, the reverse-bias dark current was reduced for metal/MoL/GaN/MoL/metal PD structures. Further, the unusual photoconductive gain in the molecularly modified devices has been attributed to Schottky barrier lowering for UV-illuminated conditions, leading to enhanced photocurrent.
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42
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Wang K, Huang D, Yu L, Feng K, Li L, Harada T, Ikeda S, Jiang F. Promising GeSe Nanosheet-Based Thin-Film Photocathode for Efficient and Stable Overall Solar Water Splitting. ACS Catal 2019. [DOI: 10.1021/acscatal.9b00035] [Citation(s) in RCA: 33] [Impact Index Per Article: 6.6] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/16/2023]
Affiliation(s)
- Kang Wang
- Institute of Optoelectronic Materials and Technology, South China Normal University, 55 Zhongshan Avenue West, Tianhe
District, Guangzhou 510631, People’s Republic of China
| | - Dingwang Huang
- Institute of Optoelectronic Materials and Technology, South China Normal University, 55 Zhongshan Avenue West, Tianhe
District, Guangzhou 510631, People’s Republic of China
| | - Le Yu
- Institute of Optoelectronic Materials and Technology, South China Normal University, 55 Zhongshan Avenue West, Tianhe
District, Guangzhou 510631, People’s Republic of China
| | - Kuang Feng
- Institute of Optoelectronic Materials and Technology, South China Normal University, 55 Zhongshan Avenue West, Tianhe
District, Guangzhou 510631, People’s Republic of China
| | - Lintao Li
- Institute of Optoelectronic Materials and Technology, South China Normal University, 55 Zhongshan Avenue West, Tianhe
District, Guangzhou 510631, People’s Republic of China
| | - Takashi Harada
- Research Center for Solar Energy Chemistry, Osaka University, 1-3 Machikaneyama, Toyonaka, Osaka 560-8531, Japan
| | - Shigeru Ikeda
- Department of Chemistry, Konan University, 9-1 Okamoto, Higashinada, Kobe, Hyogo 658-8501, Japan
| | - Feng Jiang
- Institute of Optoelectronic Materials and Technology, South China Normal University, 55 Zhongshan Avenue West, Tianhe
District, Guangzhou 510631, People’s Republic of China
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43
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Chen B, Ruan Y, Li J, Wang W, Liu X, Cai H, Yao L, Zhang JM, Chen S, Chen G. Highly oriented GeSe thin film: self-assembly growth via the sandwiching post-annealing treatment and its solar cell performance. NANOSCALE 2019; 11:3968-3978. [PMID: 30768095 DOI: 10.1039/c8nr09836k] [Citation(s) in RCA: 4] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/09/2023]
Abstract
GeSe is considered as a potential absorber material for thin film solar cells owing to its ideal band gap, strong light absorption, remarkable air durability, Earth-abundance and non-toxic constituents. However, the high vapor pressure of GeSe at a temperature below its melting point makes it difficult to synthesize a high-quality GeSe film. To alleviate this limitation, in this work, a thermal evaporation combining a novel sandwiching post-annealing method was introduced to deposit high quality GeSe thin films with (100)-orientation. The self-assembling mechanism of the highly oriented GeSe film was carefully investigated by the systematic experiments and confirmed by the lowest total energy of the (100) crystal plane. Finally, the fully-inorganic, low-cost and non-toxic planar device with the superstrate configuration of FTO/TiO2/GeSe/carbon/Ag was also successfully fabricated. Notably, as a result, an impressive open circuit voltage (VOC) of 340 mV (maximum: 456 mV) was achieved, which is the highest VOC of GeSe solar cells reported so far. Furthermore, through current-voltage, capacitance-voltage profiling and drive level capacitance profiling measurements, it was demonstrated that the limiting factors of the GeSe solar cell performance were the narrow depletion width (138 nm) and the drastic recombination at the TiO2/GeSe interface.
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Affiliation(s)
- Binwen Chen
- Fujian Provincial Key Laboratory of Quantum Manipulation and New Energy Materials, College of Physics and Energy, Fujian Normal University, Fuzhou, 350117, China.
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44
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Ma D, Zhao J, Wang R, Xing C, Li Z, Huang W, Jiang X, Guo Z, Luo Z, Li Y, Li J, Luo S, Zhang Y, Zhang H. Ultrathin GeSe Nanosheets: From Systematic Synthesis to Studies of Carrier Dynamics and Applications for a High-Performance UV-Vis Photodetector. ACS APPLIED MATERIALS & INTERFACES 2019; 11:4278-4287. [PMID: 30623664 DOI: 10.1021/acsami.8b19836] [Citation(s) in RCA: 8] [Impact Index Per Article: 1.6] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/26/2023]
Abstract
Owing to the attractive energy band properties, a black phosphorus (BP)-analogue semiconductor, germanium selenide (GeSe), shows a promising potential applied for optoelectronic devices. Herein, ultrathin GeSe nanosheets were systematically prepared via a facile liquid-phase exfoliation approach, with controllable nanoscale thickness. Different from BP, ultrathin GeSe nanosheets exhibit good stability under both liquid and ambient conditions. Besides, its ultrafast carrier dynamics was probed by transient absorption spectroscopy. We showed that the GeSe nanosheet-based photodetector exhibits excellent photoresponse behaviors ranging from ultraviolet (UV) to the visible regime, with high responsivity and low dark current. Furthermore, the detective ability of such a device can be effectively modulated by varying the applied bias potential, light intensity, and concentration of the electrolyte. Generally, our present contribution could not only supply fundamental knowledge of a GeSe nanosheet-based photoelectrochemical (PEC)-type device, but also offer guidance to extend other possible semiconductor materials in the application of the PEC-type photodetector.
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Affiliation(s)
- Dingtao Ma
- Faculty of Information Technology , Macau University of Science and Technology , Taipa , Macau SAR 999078 , P. R. China
| | - Jinlai Zhao
- Faculty of Information Technology , Macau University of Science and Technology , Taipa , Macau SAR 999078 , P. R. China
| | - Rui Wang
- Collaborative Innovation Center for Optoelectronic Science and Technology and Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province , Shenzhen University , Shenzhen 518060 , P. R. China
- Department of Electronic Engineering , Xiamen University , Xiamen 361005 , P. R. China
| | - Chenyang Xing
- Collaborative Innovation Center for Optoelectronic Science and Technology and Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province , Shenzhen University , Shenzhen 518060 , P. R. China
| | - Zhongjun Li
- Faculty of Information Technology , Macau University of Science and Technology , Taipa , Macau SAR 999078 , P. R. China
| | - Weichun Huang
- Collaborative Innovation Center for Optoelectronic Science and Technology and Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province , Shenzhen University , Shenzhen 518060 , P. R. China
| | - Xiantao Jiang
- Collaborative Innovation Center for Optoelectronic Science and Technology and Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province , Shenzhen University , Shenzhen 518060 , P. R. China
| | - Zhinan Guo
- Collaborative Innovation Center for Optoelectronic Science and Technology and Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province , Shenzhen University , Shenzhen 518060 , P. R. China
| | - Zhengqian Luo
- Department of Electronic Engineering , Xiamen University , Xiamen 361005 , P. R. China
| | - Yu Li
- Collaborative Innovation Center for Optoelectronic Science and Technology and Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province , Shenzhen University , Shenzhen 518060 , P. R. China
| | - Jianqing Li
- Faculty of Information Technology , Macau University of Science and Technology , Taipa , Macau SAR 999078 , P. R. China
| | - Shaojuan Luo
- Collaborative Innovation Center for Optoelectronic Science and Technology and Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province , Shenzhen University , Shenzhen 518060 , P. R. China
| | - Yupeng Zhang
- Collaborative Innovation Center for Optoelectronic Science and Technology and Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province , Shenzhen University , Shenzhen 518060 , P. R. China
| | - Han Zhang
- Collaborative Innovation Center for Optoelectronic Science and Technology and Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province , Shenzhen University , Shenzhen 518060 , P. R. China
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45
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Yu H, Chen Y. Pressure-induced Ge 2Se 3and Ge 3Se 4crystals with low superconducting transition temperatures. Phys Chem Chem Phys 2019; 21:15417-15421. [DOI: 10.1039/c9cp02362c] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
Crystalline Ge2Se3and Ge3Se4compounds are predicted to be stable and exhibit superconducting transitions under high pressures.
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Affiliation(s)
- Hulei Yu
- Department of Mechanical Engineering
- The University of Hong Kong
- China
| | - Yue Chen
- Department of Mechanical Engineering
- The University of Hong Kong
- China
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46
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Khoa DQ, Nguyen DT, Nguyen CV, Vi VT, Phuc HV, Phuong LT, Hoi BD, Hieu NN. Modulation of electronic properties of monolayer InSe through strain and external electric field. Chem Phys 2019. [DOI: 10.1016/j.chemphys.2018.09.022] [Citation(s) in RCA: 14] [Impact Index Per Article: 2.8] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/25/2022]
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47
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Enhancement of photoluminescence efficiency in GeSe ultrathin slab by thermal treatment and annealing: experiment and first-principles molecular dynamics simulations. Sci Rep 2018; 8:17671. [PMID: 30518852 PMCID: PMC6281588 DOI: 10.1038/s41598-018-36068-x] [Citation(s) in RCA: 7] [Impact Index Per Article: 1.2] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 08/11/2018] [Accepted: 11/09/2018] [Indexed: 11/08/2022] Open
Abstract
The effect of thermal treatment and annealing under different temperatures from 100 °C to 250 °C on the photoluminescence spectroscopy of the GeSe ultrathin slab is reported. After the thermal treatment and annealing under 200 °C, we found that the photoluminescence intensity of A exciton and B exciton in GeSe ultrathin slab is increased to twice as much as that in untreated case, while is increased by ~84% in the photoluminescence intensity of C exciton. Combined by our experimental work and theoretical simulations, our study confirms the significant role of thermal treatments and annealing in reducing surface roughness and removing the Se vacancy to form more compact and smoother regions in GeSe ultrathin slab. Our findings imply that the improved quality of GeSe surface after thermal treatments is an important factor for the photoluminescence enhancement.
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48
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Abed Al- Abbas SS, Muhsin MK, Jappor HR. Tunable optical and electronic properties of gallium telluride monolayer for photovoltaic absorbers and ultraviolet detectors. Chem Phys Lett 2018. [DOI: 10.1016/j.cplett.2018.10.020] [Citation(s) in RCA: 35] [Impact Index Per Article: 5.8] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 10/28/2022]
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Barraza-Lopez S, Kaloni TP. Water Splits To Degrade Two-Dimensional Group-IV Monochalcogenides in Nanoseconds. ACS CENTRAL SCIENCE 2018; 4:1436-1446. [PMID: 30410982 PMCID: PMC6202654 DOI: 10.1021/acscentsci.8b00589] [Citation(s) in RCA: 28] [Impact Index Per Article: 4.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/21/2018] [Indexed: 05/11/2023]
Abstract
The experimental exfoliation of layered group-IV monochalcogenides-semiconductors isostructural to black phosphorus-using processes similar to those followed in the production of graphene or phosphorene has turned out unsuccessful thus far, as if the chemical degradation observed in black phosphorus was aggravated in these monochalcogenides. Here, we document a facile dissociation of water by these materials within 10 ns from room-temperature Car-Parrinello molecular dynamics calculations under standard temperature and pressure conditions. These results suggest that humidity must be fully eradicated to exfoliate monolayers successfully, for instance, by placing samples in a hydrophobic solution during mechanical exfoliation. From another materials perspective, these two-dimensional materials that create individual hydrogen ions out of water without illumination may become relevant for applications in hydrogen production and storage.
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Affiliation(s)
- Salvador Barraza-Lopez
- Department of Physics and Institute for Nanoscale Science and Engineering, University of Arkansas, Fayetteville, Arkansas 72701, United States
- E-mail:
| | - Thaneshwor P. Kaloni
- Department of Physics and Institute for Nanoscale Science and Engineering, University of Arkansas, Fayetteville, Arkansas 72701, United States
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Zhou X, Hu X, Jin B, Yu J, Liu K, Li H, Zhai T. Highly Anisotropic GeSe Nanosheets for Phototransistors with Ultrahigh Photoresponsivity. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2018; 5:1800478. [PMID: 30128256 PMCID: PMC6096999 DOI: 10.1002/advs.201800478] [Citation(s) in RCA: 69] [Impact Index Per Article: 11.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/27/2018] [Revised: 05/11/2018] [Indexed: 05/19/2023]
Abstract
2D GeSe possesses black phosphorous-analog-layered structure and shows excellent environmental stability, as well as highly anisotropic in-plane properties. Additionally, its high absorption efficiency in the visible range and high charge carrier mobility render it promising for applications in optoelectronics. However, most reported GeSe-based photodetectors show frustrating performance especially in photoresponsivity. Herein, a 2D GeSe-based phototransistor with an ultrahigh photoresponsivity is demonstrated. Its optimized photoresponsivity can be up to ≈1.6 × 105 A W-1. This high responsivity can be attributed to the highly efficient light absorption and the enhanced photoconductive gain due to the existence of trap states. The exfoliated GeSe nanosheet is confirmed to be along the [001] (armchair direction) and [010] (zigzag direction) using transmission electron microscopy and anisotropic Raman characterizations. The angle-dependent electric and photoresponsive performance is systematically explored. Notably, the GeSe-based phototransistor shows strong polarization-dependent photoresponse with a peak/valley ratio of 1.3. Furthermore, the charge carrier mobility along the armchair direction is measured to be 1.85 times larger than that along the zigzag direction.
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Affiliation(s)
- Xing Zhou
- State Key Laboratory of Material Processing and Die & Mould TechnologySchool of Materials Science and EngineeringHuazhong University of Science and Technology (HUST)Wuhan430074P. R. China
| | - Xiaozong Hu
- State Key Laboratory of Material Processing and Die & Mould TechnologySchool of Materials Science and EngineeringHuazhong University of Science and Technology (HUST)Wuhan430074P. R. China
| | - Bao Jin
- State Key Laboratory of Material Processing and Die & Mould TechnologySchool of Materials Science and EngineeringHuazhong University of Science and Technology (HUST)Wuhan430074P. R. China
| | - Jing Yu
- State Key Laboratory of Material Processing and Die & Mould TechnologySchool of Materials Science and EngineeringHuazhong University of Science and Technology (HUST)Wuhan430074P. R. China
| | - Kailang Liu
- State Key Laboratory of Material Processing and Die & Mould TechnologySchool of Materials Science and EngineeringHuazhong University of Science and Technology (HUST)Wuhan430074P. R. China
| | - Huiqiao Li
- State Key Laboratory of Material Processing and Die & Mould TechnologySchool of Materials Science and EngineeringHuazhong University of Science and Technology (HUST)Wuhan430074P. R. China
| | - Tianyou Zhai
- State Key Laboratory of Material Processing and Die & Mould TechnologySchool of Materials Science and EngineeringHuazhong University of Science and Technology (HUST)Wuhan430074P. R. China
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