Elimination of Charge Recombination Centers in Metal Halide Perovskites by Strain

Optimizing the Distribution of Additive to Refine the Micro-Nanostructure of Perovskite Films via Pulsed Laser Processing

Additives have found widespread application in perovskite optoelectronic devices, playing a crucial role in enhancing the performance and stability of these devices by optimizing the crystallization kinetics of the perovskite. However, the nonuniform distribution of additives in perovskite films caused by the bottom-up volatilization of low-boiling-point additives during traditional thermal annealing is a challenging issue that needs to be solved. In this work, we propose a strategy that integrates laser processing technology with the dithieno[3,2-b:2',3'-d]thiophene (DTT) additive process, which enables it to reduce defects by interacting with the octahedral inorganic framework of perovskite. Initially, the micro-nanostructure of the perovskite film is enhanced by the fast crystallization induced by high-energy pulsed laser irradiation, which in turn modulates the evaporation of the solution to regulate the distribution of DTT. Concurrently, the shock pressure generated by the pulsed laser further restricts the accumulation of DTT and promotes its uniform distribution within the perovskite film. As a result, by optimizing the crystallization kinetics of perovskite through pulsed laser and DTT, the crystal structure and electronic structure optimization of perovskite film lead to a reduction in defect density. The optimization of carrier dynamics further enhances the performance of the device with an excellent T80 stability of about 2400 h. This approach will provide a technical framework and theoretical basis for controlling the perovskite crystal growth and defect passivation to achieve large-scale commercial applications.

Breaking the Limit of Grain Boundaries in Perovskite Photodetection by High-Pressure Treatment

Grain boundaries (GBs) in polycrystalline metal halide perovskite (MHP) films hinder charge transport, limiting the optoelectronic device efficiency. Therefore, optimizing GBs and enhancing intergrain carrier transport is crucial for improving optoelectronic performance, especially in lateral-structure devices such as photoconductors, phototransistors, and photodetectors. Hydrostatic pressure provides a new dimension for tuning the structures and properties of halide perovskites. Here we report permanent structural changes, specifically recrystallization at GBs, and performance improvement of (FAPbI3)0.95(MAPbBr3)0.05 perovskite polycrystalline films by sustaining it under a mild pressure of 1.8 GPa for 12 h. The treated film, after being released to ambient conditions, exhibits a huge enhancement in carrier diffusivity by ∼5 times and photoresponsivity by ∼8 times. These notable enhancements are attributed to improved intergrain carrier transport facilitated by pressure-induced recrystallization at the GBs. These results imply that pressure treatment is a promising method for enhancing the optoelectronic performance of perovskite devices.

Nuclear Quantum Effects Accelerate Hot Carrier Relaxation but Slow Down Recombination in Metal Halide Perovskites

Inorganic semiconductors are composed of heavy elements whose vibrational motions are well described by classical mechanics. Heavy elements, such as Pb and I, support charge carriers in metal halide perovskites. Nevertheless, the soft structure and strong coupling between the organic and inorganic components create conditions in which nuclear quantum effects (NQEs) can play important roles. By combining ab initio, ring-polymer, and nonadiabatic molecular dynamics approaches with time-domain density functional theory, we demonstrate how NQEs influence structural and electronic properties and electron-vibrational dynamics in hybrid organic-inorganic (MAPbI3) and all-inorganic (CsPbI3) perovskites. Quantum zero-point fluctuations enhance structural disorder, reduce the band gap, and accelerate elastic electron-vibrational scattering responsible for coherence loss. NQEs have opposite influences on intraband carrier relaxation and interband recombination. These inelastic scattering events are governed by the product of the overlap-like electron-phonon matrix element and atomic velocity. NQEs reduce the overlap and increases the velocity. The intraband carrier relaxation involves many states. Reduction of overlap between some states is offset by other pathways, while an increased velocity makes intraband relaxation faster. Electron-hole overlap in band-edge states plays a key role in the recombination, and its reduction by NQEs-enhanced disorder makes the recombination slower. This phenomenon is seen with both MAPbI3 and CsPbI3 and is much more pronounced when a light organic component is present. This study offers a detailed understanding of the role of NQEs in the carrier relaxation processes of perovskites, offering important theoretical insights into hot carriers and carrier recombination that govern the performance of solar cells and other optoelectronic devices.

Reducing Intrinsic Carrier Recombination in Au/CuTCPP(Fe) Schottky Junction Through Spin Polarization Manipulation for Sensitive Photoelectrochemical Biosensing

Schottky junctions have been widely applied to facilitate charge carrier separation through the formation of an internal electric field (IEF). However, the notably restricted spatial distribution of the IEF weakens the promotion of intrinsic carrier separation. In this study, we unveil that Au nanoparticles (NPs) in the Au/CuTCPP(Fe) Schottky junction can manipulate the spin polarization of CuTCPP(Fe) to inhibit inner carrier recombination. Experimental investigations and theoretical calculations reveal that the introduction of Au NPs leads to an increased population of spin-polarized electrons, effectively suppressing inner charge carrier recombination in CuTCPP(Fe) by employing the spin mismatch between spin-polarized photoexcited carriers. Moreover, as a typical active site for the oxygen reduction reaction, the oxygen adsorption configuration on spin-polarized Fe single-atom sites in Au/CuTCPP(Fe) is further optimized, resulting in boosted interfacial reactions. Leveraging the thiocholine-induced poisoning of the active sites and the magnetic-enhanced photoelectric response, Au/CuTCPP(Fe) is harnessed to develop a photoelectrochemical biosensing platform for organophosphorus pesticides. This work offers a promising method for manipulating the spin polarization of semiconductors in heterojunctions to mitigate intrinsic charge carrier recombination.

Effect of Strain on the Photocatalytic Reaction of Graphitic Carbon Nitride: Insight from Single-Molecule Localization Microscopy

Strain engineering in two-dimensional nanomaterials holds significant potential for modulating the lattice and band structure, particularly through localized strain, which enables modulation at specific regions. Despite the remarkable effects of local strain, the relationships among local strain, spatial correlation of photogenerated charge carriers, and photocatalytic performance remain elusive. The current study coupled single-molecule localization microscopy with coordinate-based colocalization (CBC) analysis to explain these relationships. The methodology involved mapping the spatial distributions of photoinduced oxidation and reduction reaction sites across graphitic carbon nitride (g-C3N4) nanosheets, quantifying and spatially resolving their spatial correlation, and also evaluating their photocatalytic activity. The study examined 65 individual g-C3N4 nanosheets, revealing interparticle and intraparticle heterogeneity, which was classified based on their CBC score distributions. Among the 65 g-C3N4 nanosheets, type A nanosheets predominated (45 out of 65) and demonstrated both correlated and noncorrelated subregions along some wrinkles. In contrast, type B nanosheets (20 out of 65) were primarily characterized by noncorrelated subregions with minimal correlated localizations. The coexistence of both noncorrelated and correlated subregions inferred the structure of the wrinkles as folding wrinkles, which have larger tensile-strained areas than rippling wrinkles. Folding wrinkles promote colocalization through the formation of type I band alignment at tensile-strained subregions. This band alignment also enhances photocatalytic activity through a funneling effect and improved light absorption, leading to higher specific activity in correlated subregions compared to noncorrelated ones. The role of strain-induced band alignment in modulating the spatial correlation of the photoredox reaction and the photocatalytic performance at the subregion level is highlighted.

Nuclear Quantum Effects Enhance Structural Stability but Accelerate Charge Carrier Recombination in MHyPbBr3 Perovskite

Hybrid organic-inorganic perovskites exhibit significant nuclear quantum effects (NQEs) due to their light hydrogen atoms. By performing ring polymer molecular dynamics, ab initio molecular dynamics, and nonadiabatic molecular dynamics simulations on the MHyPbBr3 (MHy+ = CH3NH2NH2+) perovskites, we demonstrate that NQEs stabilize the lattice by suppressing atomic motions and accelerate nonradiative charge recombination. This stabilization arises from the synergistic effects of the Pb-N coordination bonds and N-H···Br hydrogen bonds, which enhance organic-inorganic interactions. As a result, Pb-Br octahedra, particularly [Pb(1)Br6]4- octahedra supporting electron and hole, are well-preserved, promoting electronic wavefunction delocalization and increasing electron-hole overlap. These effects enhance nonadiabatic coupling by overcoming the reduced atomic motions. Overall, this and the prolonged decoherence time accelerate the nonradiative electron-hole recombination due to NQEs. Our study highlights the unique influence of NQEs on the geometrical stability and charge carrier dynamics in MHyPbBr3, offering fundamental insights for future material design.

Self-passivation of Halide Interstitial Defects by Organic Cations in Hybrid Lead-Halide Perovskites: Ab Initio Quantum Dynamics

Halide interstitial defects severely hinder the optoelectronic performance of metal halide perovskites, making research on their passivation crucial. We demonstrate, using ab initio nonadiabatic molecular dynamics simulations, that hydrogen vacancies (Hv) at both N and C atoms of the methylammonium (MA) cation in MAPbI3 efficiently passivate iodine interstitials (Ii), providing a self-passivation strategy for dealing with the Hv and Ii defects simultaneously. Hv at the N site (Hv-N) introduces a defect state into the valence band, while the state contributed by Hv at the C site (Hv-C) evolves from a shallow level at 0 K to a deep midgap state at ambient temperature, exhibiting a high environmental activity. Both Hv-N and Hv-C are strong Lewis bases, capable of capturing and passivating Ii defects. Hv-C is a stronger Lewis base, bonds with Ii better, and exhibits a more pronounced passivation effect. The charge carrier lifetimes in the passivated systems are significantly longer than in those containing either Hv or Ii, and even in pristine MAPbI3. Our demonstration of the Hv and Ii defect self-passivation in MAPbI3 suggests that systematic control of the relative concentrations of Hv and Ii can simultaneously eliminate both types of defects, thereby minimizing charge and energy losses. The demonstrated defect self-passivation strategy provides a promising means for defect control in organic-inorganic halide perovskites and related materials and deepens our atomistic understanding of defect chemistry and charge carrier dynamics in solar energy and optoelectronic materials.

Impact of Residual Strains on the Carrier Mobility and Stability of Perovskite Films

Solution-based inorganic-organic halide perovskites are of great interest to researchers because of their unique optoelectronic properties and easy processing. However, polycrystalline perovskite films often show inhomogeneity due to residual strain induced during the film's post-processing phase. In turn, these strains can impact both their stability and performance. An exhaustive study of residual strains can provide a better understanding and control of how they affect the performance and stability of perovskite films. In this work, we explore this complex interrelationship between residual strains and electrical properties for methylammonium CH3NH3PbI3-xClx films using grazing incidence X-ray diffraction (GIXRD). We correlate their resistivity and carrier mobility using the Hall effect. The sin2(ψ) technique is used to optimize the annealing parameters for the perovskite films. We also establish that temperature-induced relaxation can yield a significant enhancement of the charge carrier transports in perovskite films. Finally, we also use Raman micro-spectroscopy to assess the degradation of perovskite films as a function of their residual strains.

The effective prolongation of the excited-state carrier lifetime of CsPbI2Br with applying strain

In recent years, all-inorganic perovskites CsPbX3 (X = Cl, Br, I) have emerged as excellent candidates for solar cells due to their remarkable thermal stability and suitable bandgaps. Among them, CsPbI2Br is a hotspot in perovskite material research currently. Non-radiative electron-hole recombination often leads to significant energy losses, impacting the efficiency of solar cells, so a thorough understanding of carrier recombination mechanisms is crucial. Our work investigated the carrier recombination dynamics in detail and proved that strains can effectively reduce nonradiative recombination. In this study, using first-principles calculations combined with nonadiabatic (NA) molecular dynamics (MD), we demonstrate that applying 2% tensile and 2% compressive strains to CsPbI2Br can modify the bandgap, induce moderate disorder, reduce the overlap of electron-hole wavefunctions, decrease NA coupling, and shorten decoherence time, thereby minimizing non-radiative recombination and extending the carrier lifetime. Especially the 2% tensile strain exhibits more effective control performance, significantly reducing non-radiative electron-hole recombination and extending the charge carrier lifetime to 14.59 ns, nearly five times that of the pristine CsPbI2Br system (3.12 ns). This study reveals the impact mechanism of strain on carrier behavior in perovskite solar cells, providing a new non-chemical strategy for modulating the lifetime of photo-generated carriers and enhancing the efficiency of all-inorganic perovskite solar cells.

Compression of Organic Molecules Coupled with Hydrogen Bonding Extends the Charge Carrier Lifetime in BA2SnI4

Two-dimensional (2D) metal halide perovskites, such as BA2SnI4 (BA═CH3(CH2)3NH3), exhibit an enhanced charge carrier lifetime in experiments under strain. Experiments suggest that significant compression of the BA molecule, rather than of the inorganic lattice, contributes to this enhancement. To elucidate the underlying physical mechanism, we apply a moderate compressive strain to the entire system and subsequently introduce significant compression to the BA molecules. We then perform ab initio nonadiabatic molecular dynamics simulations of nonradiative electron-hole recombination. We observe that the overall lattice compression reduces atomic motions and decreases nonadiabatic coupling, thereby delaying electron-hole recombination. Additionally, compression of the BA molecules enhances hydrogen bonding between the BA molecules and iodine atoms, which lengthens the Sn-I bonds, distorts the [SnI6]4- octahedra, and suppresses atomic motions further, thus reducing nonadiabatic coupling. Also, the elongated Sn-I bonds and weakened antibonding interactions increase the band gap. Altogether, the compression delays the nonradiative electron-hole recombination by more than a factor of 3. Our simulations provide new and valuable physical insights into how compressive strain, accommodated primarily by the organic ligands, positively influences the optoelectronic properties of 2D layered halide perovskites, offering a promising pathway for further performance improvements.

Chloride Ion-Induced Spatial Separation and Long Recombination Time of Photogenerated Electrons and Holes in Crystalline Carbon Nitride

Poly(triazine imide)·Li+Cl- (PTI/Li+Cl-) as one of the most reported crystalline carbon nitrides has shown exciting potential for photocatalysis. However, understanding the role of Li+/Cl- in the photoexcited charge transfer in the time and space of PTI is a challenging problem. Here, we have investigated the nonradiative charge recombination of series ion intercalated PTI systems (PTI/Li+X-, where X = F, Cl, Br, and I) by performing the ab initio nonadiabatic molecular dynamics simulations. The results indicate that the intercalated anions in PTI/Li+Cl- and PTI/Li+Br- have the potential to trap holes, separate the electrons and holes, and prolong the nonradiative electron-hole recombination. In particular, ∼70% of holes in PTI/Li+Cl- can transport among interlayers toward the {0001} planes, while most of the electrons are transferred to the {101̅0} planes, exhibiting different transport pathways and directions. Furthermore, PTI/Li+Cl- has an electron-hole recombination time as long as 136 ns, which explains its excellent optoelectronic properties. This work provides a theoretical baseline for the reported facet engineering improvement of crystalline carbon nitride for overall water splitting.

Understanding Defects in Perovskite Solar Cells through Computation: Current Knowledge and Future Challenge

Lead halide perovskites with superior optoelectrical properties are emerging as a class of excellent materials for applications in solar cells and light-emitting devices. However, perovskite films often exhibit abundant intrinsic defects, which can limit the efficiency of perovskite-based optoelectronic devices by acting as carrier recombination centers. Thus, an understanding of defect chemistry in lead halide perovskites assumes a prominent role in further advancing the exploitation of perovskites, which, to a large extent, is performed by relying on first-principles calculations. However, the complex defect structure, strong anharmonicity, and soft lattice of lead halide perovskites pose challenges to defect studies. In this perspective, on the basis of briefly reviewing the current knowledge concerning computational studies on defects, this work concentrates on addressing the unsolved problems and proposing possible research directions in future. This perspective particularly emphasizes the indispensability of developing advanced approaches for deeply understanding the nature of defects and conducting data-driven defect research for designing reasonable strategies to further improve the performance of perovskite applications. Finally, this work highlights that theoretical studies should pay more attention to establishing close and clear links with experimental investigations to provide useful insights to the scientific and industrial communities.

Iodide Vacancy Defects Clustering in Pairs Rather Than in Isolation in a Lead Iodide Perovskite: Identification, Origin, and Implications

Iodide (I-) vacancy defects are strongly related to the stability of perovskite optoelectronic devices. The I- vacancy in lead iodide perovskites is normally considered to exist in the form of a single isolated defect. However, we determined that the I- vacancies cluster in pairs in specific ways in the typical perovskite of tetragonal CsPbI3. This I- vacancy-vacancy dimer is energetically more favorable than two isolated I- monovacancies. It breaks the symmetry of the Pb-I octahedron, resulting in lattice distortion. Its origin lies in the special lattice distortion effect caused by the electron orbital interaction of the perovskite material. Furthermore, the I- vacancy-vacancy dimer and the associated lattice distortion increase the carrier lifetime by 1.3 times compared to that of the system with two isolated I- monovacancies, but they also compromise its structural stability. This new insight into the I- vacancy defect will enhance our understanding of perovskite optoelectronic devices.

New visible-light-driven Bi2MoO6/Cs3Sb2Br9 heterostructure for selective photocatalytic oxidation of toluene to benzaldehyde

Herein, new Bi2MoO6/Cs3Sb2Br9 heterostructure (BiMo/CSB) was investigated for the first time as a visible-light-driven photocatalyst for C(sp3)-H bond activation using molecular oxygen as a green oxidant and toluene as a model substrate. The optimized BiMo/CSB photocatalyst exhibited enhanced toluene oxidation activity (2,346 μmol g-1h-1), which was almost two- and five-fold that of pristine CSB (1,165 μmol g-1h-1) and BiMo (482 μmol g-1h-1), respectively. The improved photocatalytic performance was essentially attributed to the formation of staggered band energy lineup in the BiMo/CSB hybrid, which promoted S-scheme charge transfer across the BiMo/CSB heterointerface as supported by ultraviolet photoelectron spectroscopy (UPS), density functional theoretical (DFT), time-resolve photoluminescence (TRPL), and photoelectrochemical studies. Spin-trapping electron paramagnetic resonance (EPR) and radical scavenging studies revealed that photoinduced hole, molecular oxygen, and superoxide radical are key active species in this photocatalytic system. The developed BiMo/CSB catalyst provided good selectivity toward benzaldehyde product (94-98 %), presumably due to the inhibiting effect of benzyl alcohol on benzaldehyde oxidation. No significant change in structure and morphology was observed for the spent catalyst, however small negative shift of Sb 3d and Bi 4f binding energy was found suggesting partial reduction of Sb3+ and Bi3+. This work not only provides a new visible-light-driven photocatalyst for C(sp3)-H bond activation but also opens the doors for exploitation of the conversion and functionalization of this inert bond toward the production of high value-added organic chemicals.

Controlling Charge Carrier Dynamics in Porphyrin Nanorings by Optically Active Templates

Understanding the dynamics of photogenerated charge carriers is essential for enhancing the performance of solar and optoelectronic devices. Using atomistic quantum dynamics simulations, we demonstrate that a short π-conjugated optically active template can be used to control hot carrier relaxation, charge carrier separation, and carrier recombination in light-harvesting porphyrin nanorings. Relaxation of hot holes is slowed by 60% with an optically active template compared to that with an analogous optically inactive template. Both systems exhibit subpicosecond electron transfer from the photoactive core to the templates. Notably, charge recombination is suppressed 6-fold by the optically active template. The atomistic time-domain simulations rationalize these effects by the extent of electron and hole localization, modification of the density of states, participation of distinct vibrational motions, and changes in quantum coherence. Extension of the hot carrier lifetime and reduction of charge carrier recombination, without hampering charge separation, demonstrate a strategy for enhancing efficiencies of energy materials with optically active templates.

The sp3 Defect Decreases Charge Carrier Lifetime in (8,3) Single-Walled Carbon Nanotubes

A recent experimental approach introduces sp3 defects into single-walled carbon nanotubes (SWNTs) through controlled functionalization with guanine, resulting in a decrease in charge carrier lifetime. However, the physical mechanism behind this phenomenon remains unclear. We employ nonadiabatic molecular dynamics to systematically model the nonradiative recombination process of electron-hole pairs in SWNTs with sp3 defects generated by a guanine molecule. We demonstrate that the introduction of sp3 defects creates an overlapping channel between the highest occupied (HOMO) and lowest unoccupied molecular orbital (LUMO), significantly enhancing the nonadiabatic (NA) coupling and leading to a 4.7-fold acceleration in charge carrier recombination compared to defect-free SWNTs. The charge carrier recombination slows significantly at a lower temperature (50 K) due to the weakening of the NA coupling. Our results rationalize the accelerated recombination of charge carriers in SWNTs with sp3 defects in experiments and contribute to a deeper understanding of the carrier dynamics in SWNTs.

Substrate Ferroelectric Proximity Effects Have a Strong Influence on Charge Carrier Lifetime in Black Phosphorus

By stacking monolayer black phosphorus (MBP) with nonpolarized and ferroelectric polarized bilayer hexagonal boron nitride (h-BN), we demonstrate that ferroelectric proximity effects have a strong influence on the charge carrier lifetime of MBP using nonadiabatic (NA) molecular dynamics simulations. Through enhancing the motion of phosphorus atoms, ferroelectric polarization enhances the overlap of electron-hole wave functions that improves NA coupling and decreases the bandgap, resulting in a rapid electron-hole recombination completing within a quarter of nanoseconds, which is two times shorter than that in nonpolarized stackings. In addition to the dominant in-plane Ag2 mode in free-standing MBP, the out-of-plane high-frequency Ag1 and low-frequency interlayer breathing modes presented in the heterojunctions drive the recombination. Notably, the resonance between the breathing mode within bilayer h-BN and the B1u mode of MBP provides an additional nonradiative channel in ferroelectric stackings, further accelerating charge recombination. These findings are crucial for charge dynamics manipulation in two-dimensional materials via substrate ferroelectric proximity effects.

Lattice Strain Regulation Enables High-Performance Formamidinium Perovskite Photovoltaics

Formamidinium lead iodide (FAPbI3 ) perovskite possesses an ideal optical bandgap and is a potential material for fabricating the most efficient single-junction perovskite solar cells (PSCs). Nevertheless, large formamidinium (FA) cations result in residual lattice strain, which reduces the power conversion efficiency (PCE) and operational stability of PSCs. Herein, the modulation of lattice strain in FAPbI3 crystals via a π-conjugated organic amine, i.e., 4-pyrene oxy butylamine (PYBA), is proposed. PYBA pairs at the grain boundary serve as a template for the crystallization of FAPbI3 perovskite, thereby inducing a highly oriented crystal and a pure α-phase film. The PYBA pairs with strong π-π interactions provide a solid fulcrum for external compression strain, thus compensating for the inherent tension strain of FAPbI3 crystals. The strain release elevates the valence band of the perovskite crystals, thereby decreasing the bandgap and trap density. Consequently, the PYBA-regulated FAPbI3 PSC achieves an excellent PCE of 24.76%. Moreover, the resulting device exhibits improves operational stability and maintains over 80% of its initial PCE after 1500 h under maximum power point tracking conditions.

Imperfect makes perfect: defect engineering of photoelectrodes towards efficient photoelectrochemical water splitting

Photoelectrochemical (PEC) water splitting for hydrogen evolution has been considered as a promising technology to solve the energy and environmental issues. However, the solar-to-hydrogen (STH) conversion efficiencies of current PEC systems are far from meeting the commercial demand (10%) due to the lack of efficient photoelectrode materials. The recent rapid development of defect engineering of photoelectrodes has significantly improved the PEC performance, which is expected to break through the bottleneck of low STH efficiency. In this review, the category and the construction methods of different defects in photoelectrode materials are summarized. Based on the in-depth summary and analysis of existing reports, the PEC performance enhancement mechanism of defect engineering is critically discussed in terms of light absorption, carrier separation and transport, and surface redox reactions. Finally, the application prospects and challenges of defect engineering for PEC water splitting are presented, and the future research directions in this field are also proposed.

Great Influence of Pressure and Isotope Effects on Nonradiative Charge Loss in Hybrid Organic-Inorganic Perovskites

The intrinsic softness of hybrid organic-inorganic perovskites (HOIPs) allows their lattice and optoelectronic performance to be tunable to external pressure. Using nonadiabatic (NA) molecular dynamics, we demonstrate that a mild pressure accelerates hot electron relaxation and suppresses nonradiative electron-hole recombination in CH3NH3PbI3. Both processes are governed by NA coupling, which is enhanced between the electronic states of the quasi-continuous bands while is decreased between the band-edge states by reducing the electron-hole wave function overlap. Hydrogen/deuterium isotope exchange alleviates the pressure-induced NA coupling by increasing lattice rigidity and decreasing wave function overlap, slowing down both the hot electron relaxation and electron-hole recombination processes. The simulated time scales of sub-3 ps for hot electron relaxation and half nanoseconds for recombination agree well with the experiments. The study suggests that the isotope exchange can mitigate the pressure-caused fast losses of hot electrons and further prolong the charge carrier lifetime in HOIPs.

Excitation-Wavelength-Dependent Charge-Carrier Lifetime in Hematite: An Insight from Nonadiabatic Molecular Dynamics

Experiments have reported that the photoexcited carrier lifetime in α-Fe₂O₃ has a significant excitation-wavelength dependence but leave the physical mechanism unresolved. In this work, we rationalize the puzzling excitation-wavelength dependence of the photoexcited carrier dynamics in Fe₂O₃ by performing nonadiabatic molecular dynamics simulation based on the strongly constrained and appropriately normed functional, which accurately describes the electronic structure of Fe₂O₃. Photogenerated electrons with lower-energy excitation relax fast in the t_2g conduction band within about 100 fs, while the photogenerated electrons with higher-energy excitation undergo first a slower interband relaxation from the e_g lower state to the t_2g upper state on a time scale of 135 ps, followed by the much faster t_2g intraband relaxation. This study provides insight into the experimentally reported excitation-wavelength dependence of the carrier lifetime in Fe₂O₃ and a reference for regulating photogenerated carrier dynamics in transition-metal oxides through the light excitation wavelength.

Improved Defect Tolerance and Charge Carrier Lifetime in Tin-Lead Mixed Perovskites: Ab Initio Quantum Dynamics

Simulations by nonadiabatic (NA) molecular dynamics demonstrate that mixing tin with lead in CH₃NH₃PbI₃ can passivate the midgap state created by an interstitial iodine (I_i) via the imposed compressive strain and upshifted valence band maximum, reduce NA coupling by decreasing electron-hole wave functions overlap, and shortens pure-dephasing time by introducing high-frequency phonon modes. Thus, the charge carrier lifetime extends to 3.6 ns due to the significantly reduced nonradiative electron-hole recombination, which is an order of magnitude longer than the I_i-containing CH₃NH₃PbI₃, over 2.5 times longer than the pristine CH₃NH₃PbI₃ (1.4 ns), and even 1.7 times longer than the tin-lead mixed perovskite without the I_i defects (2.1 ns). Tin-lead alloying simultaneously increases the I_i defect formation energy to 0.402 eV from 0.179 eV in CH₃NH₃PbI₃, which effectively enhances defect tolerance by reducing the defect concentration. The study reveals the factors controlling the enhanced performance of tin-lead mixed perovskite solar cells.

Rationalization of passivation strategies toward high-performance perovskite solar cells

Lead halide perovskite solar cells (PSCs) have shown unprecedented development in efficiency and progressed relentlessly in improving stability. All the achievements have been accompanied by diverse passivation strategies to circumvent the pervasive defects in perovskite materials, which play crucial roles in the process of charge recombination, ion migration, and component degradation. Among the tremendous efforts made to solve these issues and achieve high-performance PSCs, we classify and review both well-established and burgeoning passivation strategies to provide further guidance for the passivation protocols in PSCs, including chemical passivation to eliminate defects by the formation of chemical bonds, physical passivation to eliminate defects by strain relaxation or physical treatments, energetic passivation to improve the stability toward light and oxygen, and field-effect passivation to regulate the interfacial carrier behavior. The subtle but non-trivial consequences from various passivation strategies need advanced characterization techniques combining synchrotron-based X-ray analysis, capacitance-based measurements, spatially resolved imaging, fluorescent molecular probe, Kelvin probe force microscope, etc., to scrutinize the mechanisms. In the end, challenges and prospective research directions on advancing these passivation strategies are proposed. Judicious combinations among chemical, physical, energetic, and field-effect passivation deserve more attention for future high-efficiency and stable perovskite photovoltaics.

Anion Doping Delays Nonradiative Electron-Hole Recombination in Cs-Based All-Inorganic Perovskites: Time Domain ab Initio Analysis

Using time-domain density functional theory combined with nonadiabatic (NA) molecular dynamics, we demonstrate that composition engineering of the X-site anions has a strong influence on the nonradiative electron-hole recombination and thermodynamic stability of cesium-based all-inorganic perovskites. Partial substitution of iodine(I) with bromine (Br) and acetate (Ac) anions reduces the NA electron-vibrational coupling by minimizing the overlap between the electron and hole wave functions and suppressing atomic fluctuations. The doping also widens the energy gap to further reduce the NA coupling and to enhance the open-circuit voltage of perovskite solar cells. These factors increase the charge carrier lifetime by an order of magnitude and improve structural stability in the series CsPbI_1.88BrAc_0.12 > CsPbI₂Br > CsPbI₃. The fundamental atomistic insights into the influence of anion doping on the photophysical properties of the all-inorganic lead halide perovskites guide the design of efficient optoelectronic materials.

Charge Recombination Dynamics in a Metal Halide Perovskite Simulated by Nonadiabatic Molecular Dynamics Combined with Machine Learning

Nonadiabatic coupling (NAC) plays a central role in driving nonadiabatic dynamics in various photophysical and photochemical processes. However, the high computational cost of NAC limits the time scale and system size of quantum dynamics simulation. By developing a machine learning (ML) framework and applying it to a traditional CH₃N₃PbI₃ perovskite, we demonstrate that the various ML algorithms (XGBoost, LightGBM, and random forest) combined with three descriptors (sine matrix, MBTR, and SOAP) can predict accurate NACs that all agree well with the direct calculations, particularly for the combination of LightGBM and sine matrix descriptor showing the best performance with a high correlation coefficient of ≤0.87. The simulated nonradiative electron-hole recombination time scales agree well with each other between the NACs obtained from direct calculations and ML prediction. The study shows the advantage in accelerating quantum dynamics simulations using ML algorithms.

Structural Disorder in Higher-Temperature Phases Increases Charge Carrier Lifetimes in Metal Halide Perovskites

Solar cells and optoelectronic devices are exposed to heat that degrades performance. Therefore, elucidating temperature-dependent charge carrier dynamics is essential for device optimization. Charge carrier lifetimes decrease with temperature in conventional semiconductors. The opposite, anomalous trend is observed in some experiments performed with MAPbI₃ (MA = CH₃NH₃⁺) and other metal halide perovskites. Using ab initio quantum dynamics simulation, we establish the atomic mechanisms responsible for nonradiative electron-hole recombination in orthorhombic-, tetragonal-, and cubic MAPbI₃. We demonstrate that structural disorder arising from the phase transitions is as important as the disorder due to heating in the same phase. The carrier lifetimes grow both with increasing temperature in the same phase and upon transition to the higher-temperature phases. The increased lifetime is rationalized by structural disorder that induces partial charge localization, decreases nonadiabatic coupling, and shortens quantum coherence. Inelastic and elastic electron-vibrational interactions exhibit opposite dependence on temperature and phase. The partial disorder and localization arise from thermal motions of both the inorganic lattice and the organic cations and depend significantly on the phase. The structural deformations induced by thermal fluctuations and phase transitions are on the same order as deformations induced by defects, and hence, thermal disorder plays a very important role. Since charge localization increases carrier lifetimes but inhibits transport, an optimal regime maximizing carrier diffusion can be designed, depending on phase, temperature, material morphology, and device architecture. The atomistic mechanisms responsible for the enhanced carrier lifetimes at elevated temperatures provide guidelines for the design of improved solar energy and optoelectronic materials.

Enhanced Phase Stability of Compressive Strain-Induced Perovskite Crystals

Control of strain in perovskite crystals has been considered as an effective strategy to ensure the phase stability of perovskite films where a compressive strain is particularly preferred over a tensile strain due to a lowered Gibbs free energy by the unit cell contraction effect. Here we adapt the strategy of strain control into perovskite solar cells in which the compressive strain is applied by utilizing a thermal expansion difference between the perovskite film and an adjacent layer. Poly(4-butylphenyldiphenylamine), with a higher thermal expansion coefficient compared to that of perovskite, is employed as a substrate for perovskite crystal growth at 100 °C, followed by cooling to room temperature. The applied compressive strain at the interface, as a result of a greater contraction of the polymer compared to the perovskite film, is confirmed by grazing incidence X-ray diffraction showing a red peak shift with increasing secondary angle. The compressive strain-induced perovskite film shows relatively constant absorbance spectra as a function of time. In the meantime, the absorbance spectra of a film without strain control exhibit a gradual decay with developing an Urbach tail. Importantly, the effect of strain engineering is remarkably prominent in the long-term photovoltaic performance. The photocurrent drops by 41% over 911 h without controlling strain, which is significantly improved by employing compressive strain, showing only a 6% drop in photocurrent from a shelf-stability test without encapsulation. It is also noted that an S-shaped kink appears in the current-voltage curves since 579-h-long storage for the device without strain control, leading to unreliable and overestimated fill factor and conversion efficiency. On the other hand, a 16% increase in fill factor with a stable performance is derived over 911 h from the compressive strain-induced device.

Photoinduced Small Hole Polarons Formation and Recombination in All-Inorganic Perovskite from Quantum Dynamics Simulation

We conducted ab initio molecular dynamics (AIMD) and nonadiabatic MD to simulate polaron formation and recombination in all-inorganic Cs₃Bi₂Br₉ perovskite. The meticulously designed AIMD simulations show that two types of small hole polaron, including localized and semidelocalized small hole polaron on either an intralayer or an interlayer Br dimer, are adiabatically formed within 1.71 ps. The localized small hole polaron reduces nonadiabatic coupling and decoherence time and, thus, delays charge recombination to 213 ns. In contrast, the dominant semidelocalized polaron increases nonadiabatic coupling by enhancing electron-hole overlap and restores the energy gap and decoherence time to the pristine system, accelerating recombination to 4.7 ns compared to a 10 ns charge carrier lifetime in the pristine system. All the obtained time scales agree well with experiments. The study offers a fundamental understanding of the excited-state dynamics of small hole polaron in Cs₃Bi₂Br₉ and helps to design high-performance perovskite optoelectronics and photovoltaics.

Symmetrical Linkage in Porphyrin Nanoring Suppressed the Electron-Hole Recombination Demonstrated by Nonadiabatic Molecular Dynamics

Macromolecular porphyrin nanorings are receiving significant attention because of their excellent optoelectronic properties. However, their efficiencies as potential solar materials are significantly affected by nonradiative charge recombination. To understand the recombination mechanism by alternating structural parameters and using tight-binding nonadiabatic molecular dynamics, we demonstrate that charge recombination depends strongly on the mode of the linker in the porphyrin nanoring. The nanoring having all-butadiyne-linkage (pristine-P8) inhibits carrier relaxation. In contrast, a partially fused nanoring (fused-P8) expedites the rate of quantum transition. An extension of the lifetime by a factor of 4 is due to the larger optical gap in pristine-P8 that reduces the NA coupling by decreasing the overlap between band edge states. Additionally, an intense phonon peak in the low-frequency region and rapid coherence loss within the electronic subsystem favors prolonging the carrier lifetime. This study provides an atomistic realization for the design of macromolecular porphyrin nanorings for the potential use in photovoltaic materials.

Enhanced Electron Transfer and Spin Flip through Spin-Orbital Couplings in Organic/Inorganic Heterojunctions: A Nonadiabatic Surface Hopping Simulation

The circumstances of transferred electrons across organic/inorganic interfaces have attracted intensive interest because of the distinctive electronic structure properties of those two components. Leveraging ab initio nonadiabatic molecular dynamics methods in conjunction with spin dynamics induced by spin-orbital couplings (SOCs), this study reports two competitive channels during photoinduced dynamical processes in the prototypical ZnPc/monolayer MoS₂ heterojunction. Interestingly, the electron-transfer and relaxation processes occur simultaneously because of the enhancement of electron-phonon couplings and expansion of dynamical pathways by SOCs, suggesting that the electron-transfer rate and relaxation processes can be tuned by SOCs, hence yielding the performance promotion of photovoltaic and photocatalytic devices. Additionally, approximately half of the transferred electrons flip their spin within 1.6 ps because of strong SOCs in MoS₂, achieving great agreement with experimental measurements. This investigation provides instructive perspectives for designing novel devices and applications based on organic/inorganic heterojunctions, demonstrating the importance of spin dynamics simulations in exploring sophisticated photoinduced processes in materials.

Independent Trajectory Mixed Quantum-Classical Approaches Based on the Exact Factorization

Mixed quantum-classical dynamics based on the exact factorization exploits the "derived" electron-nuclear correlation (ENC) term aiming for the description of quantum coherences. The ENC contains interactions between the phase of electronic states and nuclear quantum momenta which depend on the spatial shape of the nuclear density.The original surface hopping based on the exact factorization (SHXF) [\textit{J. Phys. Chem. Lett.} \textbf{2018}, \textit{9}, 1097] exploits frozen Gaussian functions to construct the nuclear density in the ENC term while the phase of electronic states is approximated as a fictitious nuclear momentum change.However, in reality, the width of nuclear wave packets varies in time depending on the shape of potential energy surfaces.In this work, we present a modified SHXF approach and a newly-developed Ehrenfest dynamics based on the exact factorization (EhXF) with time-dependent Gaussian functions and phases by enforcing total energy conservation.We perform numerical tests for various one-dimensional two-state model Hamiltonians.Overall, the time-dependent width of Gaussian functions and the energy conserving phase show a reliable decoherence compared to the original frozen Gaussian-based SHXF and the exact quantum mechanical calculation.Especially, the energy conserving phase is crucial for EhXF to reproduce the correct quantum dynamics.

Correlated organic-inorganic motion enhances stability and charge carrier lifetime in mixed halide perovskites

Organic cations are believed to have little influence on the charge carrier lifetime in hybrid organic-inorganic perovskites. Experiments defy this expectation. We consider formamidinium lead iodide (FAPbI₃) doping with and without Br as two prototypical systems, and perform ab initio time-domain nonadiabatic (NA) molecular dynamics simulations to investigate nonradiative electron-hole recombination. The simulations demonstrate that correlated organic-inorganic motion stabilizes the lattice and inhibits nonradiative charge recombination in FAPbI₃ upon Br doping. Br doping suppresses the rotation of FA and the vibrations of both organic and inorganic components, and leads to hole localization and the extent of localization is enhanced upon thermal impact, notably reducing the NA coupling by decreasing the overlap between the electron and hole wave functions. Doping also slightly increases the bandgap for further decreasing NA coupling and enhances the open-circuit voltage of perovskite solar cells. The small NA coupling and large bandgap beat the slow coherence loss, delaying electron-hole recombination and extending the charge carrier lifetime to 1.5 ns in Br-doped FAPbI₃, which is on the order of 1.1 ns in pristine FAPbI₃. The obtained time scales are in good agreement with experiments. Multiple phonon modes, including those of both the inorganic and organic components, couple to the electronic subsystem and accommodate the excess electronic energy lost during nonradiative charge recombination. The study reveals the unexpected atomistic mechanisms for the reduction of electron-hole recombination upon Br doping, rationalizes the experiments, and advances our understanding of the excited-state dynamics of perovskite solar cells.

Simple Structural Descriptor Obtained from Symbolic Classification for Predicting the Oxygen Vacancy Defect Formation of Perovskites

Symbolic classification is an approach of interpretable machine learning for building mathematical formulas that fit certain data sets. In this work, symbolic classification is used to establish the relationship between oxygen vacancy defect formation energy and structural features. We find a structural descriptor n_a(r_a/E_na - r_b), where n_a is the valence of the a-site ion, r_a is the radius of the a-site ion, E_na is the electronegativity of the a-site ion, and r_b is the radius of the b-site ion. It accelerates the screening of defect-free oxide perovskites in advance of density functional theory (DFT) calculations and experimental characterization. Our results demonstrate the potential of symbolic classification for accelerating the data-driven design and discovery of materials with improved properties.

Dual Passivation of Point Defects at Perovskite Grain Boundaries with Ammonium Salts Greatly Inhibits Nonradiative Charge Recombination

Experiments demonstrate that grain boundaries (GBs) exhibit detrimental effect on carrier lifetimes in MAPbI₃ (MA= CH₃NH₃⁺). On the basis of the nonadiabatic (NA) molecular dynamics simulations, we demonstrated that NH₄Cl can simultaneously passivate the common point defects that introduce recombination centers at GBs and accelerate electron-hole recombination but shows small effects in the bulk. The MA interstitial (MA_i) and the substitutional MA to Pb (MA_Pb) in pristine MAPbI₃ leave the band gap and charge recombination rates largely unchanged but create deep electron traps at GBs by separately either distorting inorganic octahedra or creating an I-dimer. Cl^- and NH₄⁺ remove the in-gap states by either restoring the distorted octahedra or destroying the I-dimer. Thus, the band gap recovers to the pristine system, NA coupling decreases, and decoherence accelerates, extending the carrier lifetime even twice longer than MAPbI₃. This study shows that the negative role of GBs can be removed by dually passivating with NH₄Cl.

Interpolating Nonadiabatic Molecular Dynamics Hamiltonian with Inverse Fast Fourier Transform

Nonadiabatic (NA) molecular dynamics (MD) allows one to investigate far-from-equilibrium processes in nanoscale and molecular materials at the atomistic level and in the time domain, mimicking time-resolved spectroscopic experiments. Ab initio NAMD is limited to about 100 atoms and a few picoseconds, due to computational cost of excitation energies and NA couplings. We develop a straightforward methodology that can extend ab initio quality NAMD to nanoseconds and thousands of atoms. The ab initio NAMD Hamiltonian is sampled and interpolated along a trajectory using a Fourier transform, and then, it is used to perform NAMD with known algorithms. The methodology relies on the classical path approximation, which holds for many materials and processes. To achieve a complete ab initio quality description, the trajectory can be obtained using an ab initio trained machine learning force field. The method is demonstrated with charge carrier trapping and relaxation in hybrid organic-inorganic and all-inorganic metal halide perovskites that exhibit complex dynamics and are actively studied for optoelectronic applications.

Interplay of structural fluctuations and charge carrier dynamics is key for high performance of hybrid lead halide perovskites

Interplay of organic cation rotation and inorganic lattice fluctuation maintains the high performance of hybrid organic–inorganic perovskites.

Identifying and Passivating Killer Defects in Pb-Free Double Cs2AgBiBr6 Perovskite

Pb-free double perovskites, such as Cs₂AgBiBr₆, are alternatives to lead halide perovskites for photovoltaic applications due to superior stability, low toxicity, and promising optoelectronic properties. However, their performance is subpar. We combine nonadiabatic molecular dynamics and real-time time-dependent density-functional theory to show that the negatively charged Br vacancy in Cs₂AgBiBr₆ creates an extremely detrimental donor-yielded (DY) center, which is a typical defect in six-coordinated semiconductors. Ag⁺ and Bi³⁺ form a bond by attraction through the anisotropic vacancy charge, generating a midgap state that traps holes within tens of picoseconds. Substituting Ag with indium by doping produces a weak and long In-Bi bond, lifting the defect energy level to the conduction band. Hole trapping slows down by an order or magnitude, and trap-assisted charge recombination decreases 4-fold. The simulations bring atomistic insights into defects of Pb-free double perovskites and provide a defect mitigation strategy for rational design of high-performance optoelectronic devices.

Improving persistent luminescence in pressure-tuned CsPbBr3 nanocrystals by Ce3+ doping

The pressure-dependent photoluminescence kinetics of CsPbBr₃:Ce quantum dots was investigated by steady-state and time-resolved photoluminescence spectroscopy. Here, we propose a novel strategy to improve the persistent luminescence of CsPbBr₃ quantum dots under high pressure through doping of Ce³⁺ ions. Under high pressure, the peak intensity and energy of CsPbBr₃:Ce quantum dots decreased more slowly than those of CsPbBr₃ quantum dots, which is manifested by pressure coefficient reductions of 0.08 a.u. GPa^-1 and 0.012 eV GPa^-1, respectively. The time-resolved photoluminescence measurements revealed that Ce³⁺-doping can significantly modulate the photoluminescence kinetics to shorten the lifetimes of CsPbBr₃ quantum dots with increasing pressure. These phenomena were absolutely different from those observed in CsPbBr₃ quantum dots. These findings will be useful for broadening the application of optical devices based on all-inorganic perovskite materials under high pressure.

Benign Effects of Twin Boundaries on Charge Carrier Lifetime in Metal Halide Perovskites by a Time-Domain Study

Experiments show that two-dimensional twin boundaries (TBs) defects are benign to the excited-state lifetime of metal halide perovskites and solar cells performance. However, the mechanism remains unclear. By performing nonadiabatic (NA) molecular dynamics simulations on FAPbI₃ (FA= HC(NH₂)₂⁺), we demonstrate that TBs increase the bandgap without introducing midgap states, promote charge separation by localizing electrons and holes that reduce NA coupling and accelerate the loss of coherence, slowing nonradiative electron-hole recombination by a factor of 2.3 compared to pristine FAPbI₃, which occurs within sub-10 ns and agrees well with the experiment. Raising the temperature shortens the coherence time and reduces the NA coupling by increasing the charge localization due to the enhanced distortions of inorganic Pb-I lattice, making the recombination even slower. Our study rationalizes the positive influence of TBs and temperature on perovskite charge dynamics and emphasizes the roles played by the charge localization and quantum coherence.