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Liu W, Dong J, An B, Su H, Teng Z, Li N, Gao Y, Ge L. Synergistic dual built-in electric fields in 1T-MoS 2/Ni 3S 2/LDH for efficient electrocatalytic overall water splitting reactions. J Colloid Interface Sci 2024; 673:228-238. [PMID: 38875789 DOI: 10.1016/j.jcis.2024.06.054] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 04/14/2024] [Revised: 05/26/2024] [Accepted: 06/06/2024] [Indexed: 06/16/2024]
Abstract
Designing cost-effective electrocatalysts for water decomposition is crucial for achieving environmental-friendly hydrogen production. A transition metal sulfide/hydroxide electrocatalyst (1T-MoS2/Ni3S2/LDH) with double heterogeneous interfaces was developed through a two-step hydrothermal assisted electrodeposition method. The presence of the two built-in electric fields not only accelerated the charge transfer at the interface, but also enhanced the adsorption of the reactants and intermediate groups, and therefore improved the reaction rate and overall catalytic performance. The results suggest that the 1T-MoS2/Ni3S2/LDH catalysts display exceptional electrocatalytic reactivity. Under alkaline conditions, the overpotential of the electrocatalyst was 187 (η50) mV for OER and 104 (η10) mV for HER. Furthermore, the two-electrode system assembled by the electrocatalyst needs only a voltage of 1.55 V to deliver a current density of 10 mA cm-2. Our result provides a simple and effective methodical approach to the design of dual heterogeneous interfacial electrocatalysts.
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Affiliation(s)
- Weilong Liu
- State Key Laboratory of Heavy Oil Processing, College of New Energy and Materials, China University of Petroleum Beijing, No. 18 Fuxue Rd., Beijing 102249, People's Republic of China; Department of Materials Science and Engineering, College of New Energy and Materials, China University of Petroleum Beijing, No. 18 Fuxue Rd., Beijing 102249, People's Republic of China
| | - Jipeng Dong
- State Key Laboratory of Heavy Oil Processing, College of New Energy and Materials, China University of Petroleum Beijing, No. 18 Fuxue Rd., Beijing 102249, People's Republic of China; Department of Materials Science and Engineering, College of New Energy and Materials, China University of Petroleum Beijing, No. 18 Fuxue Rd., Beijing 102249, People's Republic of China
| | - Bohan An
- State Key Laboratory of Heavy Oil Processing, College of New Energy and Materials, China University of Petroleum Beijing, No. 18 Fuxue Rd., Beijing 102249, People's Republic of China; Department of Materials Science and Engineering, College of New Energy and Materials, China University of Petroleum Beijing, No. 18 Fuxue Rd., Beijing 102249, People's Republic of China
| | - Hui Su
- State Key Laboratory of Heavy Oil Processing, College of New Energy and Materials, China University of Petroleum Beijing, No. 18 Fuxue Rd., Beijing 102249, People's Republic of China; Department of Materials Science and Engineering, College of New Energy and Materials, China University of Petroleum Beijing, No. 18 Fuxue Rd., Beijing 102249, People's Republic of China
| | - Ziyu Teng
- State Key Laboratory of Heavy Oil Processing, College of New Energy and Materials, China University of Petroleum Beijing, No. 18 Fuxue Rd., Beijing 102249, People's Republic of China; Department of Materials Science and Engineering, College of New Energy and Materials, China University of Petroleum Beijing, No. 18 Fuxue Rd., Beijing 102249, People's Republic of China
| | - Ning Li
- State Key Laboratory of Heavy Oil Processing, College of New Energy and Materials, China University of Petroleum Beijing, No. 18 Fuxue Rd., Beijing 102249, People's Republic of China; Department of Materials Science and Engineering, College of New Energy and Materials, China University of Petroleum Beijing, No. 18 Fuxue Rd., Beijing 102249, People's Republic of China
| | - Yangqin Gao
- State Key Laboratory of Heavy Oil Processing, College of New Energy and Materials, China University of Petroleum Beijing, No. 18 Fuxue Rd., Beijing 102249, People's Republic of China; Department of Materials Science and Engineering, College of New Energy and Materials, China University of Petroleum Beijing, No. 18 Fuxue Rd., Beijing 102249, People's Republic of China
| | - Lei Ge
- State Key Laboratory of Heavy Oil Processing, College of New Energy and Materials, China University of Petroleum Beijing, No. 18 Fuxue Rd., Beijing 102249, People's Republic of China; Department of Materials Science and Engineering, College of New Energy and Materials, China University of Petroleum Beijing, No. 18 Fuxue Rd., Beijing 102249, People's Republic of China.
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2
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Han X, Zhang Z, Wang R. A Mini Review: Phase Regulation for Molybdenum Dichalcogenide Nanomaterials. NANOMATERIALS (BASEL, SWITZERLAND) 2024; 14:984. [PMID: 38869609 PMCID: PMC11174720 DOI: 10.3390/nano14110984] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/26/2024] [Revised: 06/01/2024] [Accepted: 06/02/2024] [Indexed: 06/14/2024]
Abstract
Atomically thin two-dimensional transition metal dichalcogenides (TMDCs) have been regarded as ideal and promising nanomaterials that bring broad application prospects in extensive fields due to their ultrathin layered structure, unique electronic band structure, and multiple spatial phase configurations. TMDCs with different phase structures exhibit great diversities in physical and chemical properties. By regulating the phase structure, their properties would be modified to broaden the application fields. In this mini review, focusing on the most widely concerned molybdenum dichalcogenides (MoX2: X = S, Se, Te), we summarized their phase structures and corresponding electronic properties. Particularly, the mechanisms of phase transformation are explained, and the common methods of phase regulation or phase stabilization strategies are systematically reviewed and discussed. We hope the review could provide guidance for the phase regulation of molybdenum dichalcogenides nanomaterials, and further promote their real industrial applications.
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Affiliation(s)
| | - Zhihong Zhang
- Beijing Key Laboratory for Magneto-Photoelectrical Composite and Interface Science, State Key Laboratory for Advanced Metals and Materials, School of Mathematics and Physics, University of Science and Technology Beijing, Beijing 100083, China;
| | - Rongming Wang
- Beijing Key Laboratory for Magneto-Photoelectrical Composite and Interface Science, State Key Laboratory for Advanced Metals and Materials, School of Mathematics and Physics, University of Science and Technology Beijing, Beijing 100083, China;
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HuangFu C, Zhou Y, Ke C, Liao J, Wang J, Liu H, Liu D, Liu S, Xie L, Jiao L. Out-of-Plane Ferroelectricity in Two-Dimensional 1T‴-MoS 2 Above Room Temperature. ACS NANO 2024; 18:14708-14715. [PMID: 38781476 DOI: 10.1021/acsnano.4c03608] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/25/2024]
Abstract
Two-dimensional (2D) molybdenum disulfide (MoS2), one of the most extensively studied van der Waals (vdW) materials, is a significant candidate for electronic materials in the post-Moore era. MoS2 exhibits various phases, among which the 1T‴ phase possesses noncentrosymmetry. 1T‴-MoS2 was theoretically predicted to be ferroelectric a decade ago, but this has not been experimentally confirmed until now. Here, we have prepared high-purity 2D 1T‴-MoS2 crystals and experimentally confirmed the room-temperature out-of-plane ferroelectricity. The noncentrosymmetric crystal structure in 2D 1T‴-MoS2 was convinced by atomically resolved transmission electron microscopic imaging and second harmonic generation (SHG) measurements. Further, the ferroelectric polarization states in 2D 1T‴-MoS2 can be switched using piezoresponse force microscopy (PFM) and electrical gating in field-effect transistors (FETs). The ferroelectric-to-paraelectric transition temperature is measured to be about 350 K. Theoretical calculations have revealed that the ferroelectricity of 2D 1T‴-MoS2 originates from the intralayer charge transfer of S atoms within the layer. The discovery of intrinsic ferroelectricity in the 1T‴ phase of MoS2 further enriches the properties of this important vdW material, providing more possibilities for its application in the field of next-generation electronic devices.
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Affiliation(s)
- Changan HuangFu
- Key Laboratory of Organic Optoelectronics and Molecular Engineering of the Ministry of Education, Department of Chemistry, Tsinghua University, Beijing 100084, China
| | - Yaming Zhou
- Key Laboratory of Organic Optoelectronics and Molecular Engineering of the Ministry of Education, Department of Chemistry, Tsinghua University, Beijing 100084, China
| | - Changming Ke
- Institute of Natural Sciences, Westlake Institute for Advanced Study, Hangzhou 310024, Zhejiang, China
- Department of Physics, School of Science, Westlake University, Hangzhou 310024, Zhejiang, China
| | - Junyi Liao
- Key Laboratory of Organic Optoelectronics and Molecular Engineering of the Ministry of Education, Department of Chemistry, Tsinghua University, Beijing 100084, China
- CAS Key Laboratory of Standardization and Measurement for Nanotechnology, National Center for Nanoscience and Technology, Beijing 100190, China
- University of Chinese Academy of Sciences, Beijing 100049, China
| | - Jiangcai Wang
- State Key Laboratory of Tribology in Advanced Equipment, Tsinghua University, Beijing 100084, China
| | - Huan Liu
- State Key Laboratory of Tribology in Advanced Equipment, Tsinghua University, Beijing 100084, China
| | - Dameng Liu
- State Key Laboratory of Tribology in Advanced Equipment, Tsinghua University, Beijing 100084, China
| | - Shi Liu
- Institute of Natural Sciences, Westlake Institute for Advanced Study, Hangzhou 310024, Zhejiang, China
- Department of Physics, School of Science, Westlake University, Hangzhou 310024, Zhejiang, China
| | - Liming Xie
- CAS Key Laboratory of Standardization and Measurement for Nanotechnology, National Center for Nanoscience and Technology, Beijing 100190, China
- University of Chinese Academy of Sciences, Beijing 100049, China
| | - Liying Jiao
- Key Laboratory of Organic Optoelectronics and Molecular Engineering of the Ministry of Education, Department of Chemistry, Tsinghua University, Beijing 100084, China
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Choi M, Lim J, Yang J. Synergistic role of MoS 2 in gelation-induced fabrication of graphene oxide films. Sci Rep 2024; 14:12159. [PMID: 38802552 PMCID: PMC11130228 DOI: 10.1038/s41598-024-62146-4] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 02/15/2024] [Accepted: 05/14/2024] [Indexed: 05/29/2024] Open
Abstract
Supporting materials for electrocatalysts must exhibit relative chemical inertness to facilitate unimpeded movement of gas, and demonstrate electrical conductivity to promote efficient electron transfer to the catalyst. Conventional catalyst electrodes, such as glassy carbon, carbon cloths, or Ni foam, are commonly employed. However, the challenge lies in the limited stability observed during testing due to the relatively weak adhesion between the catalyst and the electrode. Addressing this limitation is crucial for advancing the stability and performance of catalyst-electrode systems in various applications. Here, we suggest a novel fabrication method for a freestanding conducting film, accomplished through gelation, incorporating 1T-MoS2 and graphene oxide. 1T-MoS2 nanosheets play a crucial role in promoting the reduction of graphene oxide (GO) on the Zn foil. This contribution leads to accelerated film formation and enhanced electrical conductivity in the film. The synergistic effect also enhances the film's stability as catalyst supports. This study provides insights into the effective utilization of MoS2 and graphene oxide in the creating of advanced catalyst support systems with potential applications in diverse catalytic reaction.
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Affiliation(s)
- Minah Choi
- Department of Chemistry, College of Science, Kyung Hee University, 26 Kyungheedae-ro, Dongdaemun-gu, Seoul, 02447, Republic of Korea
| | - Joonwon Lim
- Department of Information Display, College of Science, Kyung Hee University, 26 Kyungheedae-ro, Dongdaemun-gu, Seoul, 02447, Republic of Korea.
| | - Jieun Yang
- Department of Chemistry, College of Science, Kyung Hee University, 26 Kyungheedae-ro, Dongdaemun-gu, Seoul, 02447, Republic of Korea.
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5
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Zhai W, Li Z, Wang Y, Zhai L, Yao Y, Li S, Wang L, Yang H, Chi B, Liang J, Shi Z, Ge Y, Lai Z, Yun Q, Zhang A, Wu Z, He Q, Chen B, Huang Z, Zhang H. Phase Engineering of Nanomaterials: Transition Metal Dichalcogenides. Chem Rev 2024; 124:4479-4539. [PMID: 38552165 DOI: 10.1021/acs.chemrev.3c00931] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 04/11/2024]
Abstract
Crystal phase, a critical structural characteristic beyond the morphology, size, dimension, facet, etc., determines the physicochemical properties of nanomaterials. As a group of layered nanomaterials with polymorphs, transition metal dichalcogenides (TMDs) have attracted intensive research attention due to their phase-dependent properties. Therefore, great efforts have been devoted to the phase engineering of TMDs to synthesize TMDs with controlled phases, especially unconventional/metastable phases, for various applications in electronics, optoelectronics, catalysis, biomedicine, energy storage and conversion, and ferroelectrics. Considering the significant progress in the synthesis and applications of TMDs, we believe that a comprehensive review on the phase engineering of TMDs is critical to promote their fundamental studies and practical applications. This Review aims to provide a comprehensive introduction and discussion on the crystal structures, synthetic strategies, and phase-dependent properties and applications of TMDs. Finally, our perspectives on the challenges and opportunities in phase engineering of TMDs will also be discussed.
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Affiliation(s)
- Wei Zhai
- Department of Chemistry, City University of Hong Kong, Kowloon, Hong Kong 999077, China
| | - Zijian Li
- Department of Chemistry, City University of Hong Kong, Kowloon, Hong Kong 999077, China
| | - Yongji Wang
- Department of Chemistry, City University of Hong Kong, Kowloon, Hong Kong 999077, China
| | - Li Zhai
- Department of Chemistry, City University of Hong Kong, Kowloon, Hong Kong 999077, China
- Hong Kong Branch of National Precious Metals Material Engineering Research Center (NPMM), City University of Hong Kong, Kowloon, Hong Kong 999077, China
| | - Yao Yao
- Department of Chemistry, City University of Hong Kong, Kowloon, Hong Kong 999077, China
| | - Siyuan Li
- Department of Chemistry, City University of Hong Kong, Kowloon, Hong Kong 999077, China
| | - Lixin Wang
- Department of Chemistry, City University of Hong Kong, Kowloon, Hong Kong 999077, China
| | - Hua Yang
- Department of Chemistry, City University of Hong Kong, Kowloon, Hong Kong 999077, China
| | - Banlan Chi
- Department of Chemistry, City University of Hong Kong, Kowloon, Hong Kong 999077, China
| | - Jinzhe Liang
- Department of Chemistry, City University of Hong Kong, Kowloon, Hong Kong 999077, China
| | - Zhenyu Shi
- Department of Chemistry, City University of Hong Kong, Kowloon, Hong Kong 999077, China
| | - Yiyao Ge
- Department of Chemistry, City University of Hong Kong, Kowloon, Hong Kong 999077, China
- State Key Laboratory for Advanced Metals and Materials, University of Science and Technology Beijing, Beijing 100083, China
| | - Zhuangchai Lai
- Department of Applied Physics, The Hong Kong Polytechnic University, Hong Kong 999077, China
| | - Qinbai Yun
- Department of Chemistry, City University of Hong Kong, Kowloon, Hong Kong 999077, China
| | - An Zhang
- Department of Chemistry, City University of Hong Kong, Kowloon, Hong Kong 999077, China
| | - Zhiying Wu
- Department of Chemistry, City University of Hong Kong, Kowloon, Hong Kong 999077, China
| | - Qiyuan He
- Department of Materials Science and Engineering, City University of Hong Kong, Kowloon, Hong Kong 999077, China
| | - Bo Chen
- Department of Chemistry, City University of Hong Kong, Kowloon, Hong Kong 999077, China
- State Key Laboratory of Organic Electronics and Information Displays & Jiangsu Key Laboratory for Biosensors, Institute of Advanced Materials (IAM), School of Chemistry and Life Sciences, Nanjing University of Posts and Telecommunications, Nanjing 210023, China
| | - Zhiqi Huang
- Department of Chemistry, City University of Hong Kong, Kowloon, Hong Kong 999077, China
- School of Chemistry and Chemical Engineering, Beijing Institute of Technology, Beijing 100081, China
| | - Hua Zhang
- Department of Chemistry, City University of Hong Kong, Kowloon, Hong Kong 999077, China
- Hong Kong Branch of National Precious Metals Material Engineering Research Center (NPMM), City University of Hong Kong, Kowloon, Hong Kong 999077, China
- Hong Kong Institute for Clean Energy, City University of Hong Kong, Kowloon, Hong Kong 999077, China
- Shenzhen Research Institute, City University of Hong Kong, Shenzhen 518057, China
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6
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Chen X, Ding X, Gou G, Zeng XC. Strong Sliding Ferroelectricity and Interlayer Sliding Controllable Spintronic Effect in Two-Dimensional HgI 2 Layers. NANO LETTERS 2024; 24:3089-3096. [PMID: 38426455 DOI: 10.1021/acs.nanolett.3c04869] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 03/02/2024]
Abstract
Exploration of two-dimensional (2D) sliding ferroelectric (FE) materials with experimentally detectable ferroelectricity and value-added novel functionalities is highly sought for the development of 2D "slidetronics". Herein, based on first-principles calculations, we identify the synthesizable van der Waals (vdW) layered crystals HgX2 (X = Br and I) as a new class of 2D sliding ferroelectrics. Both HgBr2 and HgI2 in 2D multilayered forms adopt the preferential stacking sequence, leading to room temperature stable out-of-plane (vertical) ferroelectricity that can be reversed via the sliding of adjacent monolayers. Owing to strong interlayer coupling and interfacial charge rearrangement, 2D HgI2 layers possess strong sliding ferroelectricity up to 0.16 μC/cm2, readily detectable in experiment. Moreover, robust sliding ferroelectricity and interlayer sliding controllable Rashba spin texture of FE-HgI2 layers enable potential applications as 2D spintronic devices such that the electric control of electron spin detection can be realized at the 2D regime.
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Affiliation(s)
- Xinfeng Chen
- Frontier Institute of Science and Technology, State Key Laboratory of Electrical Insulation and Power Equipment, Xi'an Jiaotong University, Xi'an 710049, People's Republic of China
| | - Xinkai Ding
- Frontier Institute of Science and Technology, State Key Laboratory of Electrical Insulation and Power Equipment, Xi'an Jiaotong University, Xi'an 710049, People's Republic of China
- School of Energy Materials & Chemical Engineering, Hefei University, Hefei 230601, People's Republic of China
| | - Gaoyang Gou
- Frontier Institute of Science and Technology, State Key Laboratory of Electrical Insulation and Power Equipment, Xi'an Jiaotong University, Xi'an 710049, People's Republic of China
| | - Xiao Cheng Zeng
- Department of Materials Science and Engineering, City University of Hong Kong, Hong Kong 999077, People's Republic of China
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Liu X, Zhang P, Wang S, Fang Y, Wu P, Xiang Y, Chen J, Zhao C, Zhang X, Zhao W, Wang J, Huang F, Guan C. High intrinsic phase stability of ultrathin 2M WS 2. Nat Commun 2024; 15:1263. [PMID: 38341471 DOI: 10.1038/s41467-024-45676-3] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 05/02/2023] [Accepted: 01/31/2024] [Indexed: 02/12/2024] Open
Abstract
Metallic 2M or 1T'-phase transition metal dichalcogenides (TMDs) attract increasing interests owing to their fascinating physicochemical properties, such as superconductivity, optical nonlinearity, and enhanced electrochemical activity. However, these TMDs are metastable and tend to transform to the thermodynamically stable 2H phase. In this study, through systematic investigation and theoretical simulation of phase change of 2M WS2, we demonstrate that ultrathin 2M WS2 has significantly higher intrinsic thermal stabilities than the bulk counterparts. The 2M-to-2H phase transition temperature increases from 120 °C to 210 °C in the air as thickness of WS2 is reduced from bulk to bilayer. Monolayered 1T' WS2 can withstand temperatures up to 350 °C in the air before being oxidized, and up to 450 °C in argon atmosphere before transforming to 1H phase. The higher stability of thinner 2M WS2 is attributed to stiffened intralayer bonds, enhanced thermal conductivity and higher average barrier per layer during the layer(s)-by-layer(s) phase transition process. The observed high intrinsic phase stability can expand the practical applications of ultrathin 2M TMDs.
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Affiliation(s)
- Xiangye Liu
- Institute of Flexible Electronics, Northwestern Polytechnical University, Xi'an, 710072, China
- Key Laboratory of Flexible Electronics of Zhejiang Province, Ningbo Institute of Northwestern Polytechnical University, 218 Qingyi Road, Ningbo, 315103, China
| | - Pingting Zhang
- Institute of Flexible Electronics, Northwestern Polytechnical University, Xi'an, 710072, China
- Key Laboratory of Flexible Electronics of Zhejiang Province, Ningbo Institute of Northwestern Polytechnical University, 218 Qingyi Road, Ningbo, 315103, China
| | - Shiyao Wang
- State Key Laboratory of Solidification Processing, Northwestern Polytechnical University, Xi'an, 710072, Shaanxi, China
| | - Yuqiang Fang
- State Key Laboratory of High-Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics, Chinese Academy of Sciences Shanghai, Shanghai, 200050, China
| | - Penghui Wu
- Institute of Flexible Electronics, Northwestern Polytechnical University, Xi'an, 710072, China
- Key Laboratory of Flexible Electronics of Zhejiang Province, Ningbo Institute of Northwestern Polytechnical University, 218 Qingyi Road, Ningbo, 315103, China
| | - Yue Xiang
- Institute of Flexible Electronics, Northwestern Polytechnical University, Xi'an, 710072, China
- Key Laboratory of Flexible Electronics of Zhejiang Province, Ningbo Institute of Northwestern Polytechnical University, 218 Qingyi Road, Ningbo, 315103, China
| | - Jipeng Chen
- Institute of Flexible Electronics, Northwestern Polytechnical University, Xi'an, 710072, China
- Key Laboratory of Flexible Electronics of Zhejiang Province, Ningbo Institute of Northwestern Polytechnical University, 218 Qingyi Road, Ningbo, 315103, China
| | - Chendong Zhao
- State Key Laboratory of High-Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics, Chinese Academy of Sciences Shanghai, Shanghai, 200050, China
| | - Xian Zhang
- Qian Xuesen Laboratory of Space Technology, China Academy of Space Technology, Beijing, 100094, China
| | - Wei Zhao
- State Key Laboratory of High-Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics, Chinese Academy of Sciences Shanghai, Shanghai, 200050, China
| | - Junjie Wang
- State Key Laboratory of Solidification Processing, Northwestern Polytechnical University, Xi'an, 710072, Shaanxi, China
| | - Fuqiang Huang
- State Key Laboratory of High-Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics, Chinese Academy of Sciences Shanghai, Shanghai, 200050, China
| | - Cao Guan
- Institute of Flexible Electronics, Northwestern Polytechnical University, Xi'an, 710072, China.
- Key Laboratory of Flexible Electronics of Zhejiang Province, Ningbo Institute of Northwestern Polytechnical University, 218 Qingyi Road, Ningbo, 315103, China.
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8
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Wang S, Huang J, Wu Y, Hao H. Growth of Wide-Bandgap Monolayer Molybdenum Disulfide for a Highly Sensitive Micro-Displacement Sensor. NANOMATERIALS (BASEL, SWITZERLAND) 2024; 14:275. [PMID: 38334545 PMCID: PMC10856534 DOI: 10.3390/nano14030275] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/29/2023] [Revised: 01/16/2024] [Accepted: 01/19/2024] [Indexed: 02/10/2024]
Abstract
Two-dimensional (2D) piezoelectric semiconductor materials are garnering significant attention in applications such as intelligent sensing and energy harvesting due to their exceptional physical and chemical properties. Among these, molybdenum disulfide (MoS2), a 2D wide-bandgap semiconductor, exhibits piezoelectricity in odd-layered structures due to the absence of an inversion symmetry center. In this study, we present a straightforward chemical vapor deposition (CVD) technique to synthesize monolayer MoS2 on a Si/SiO2 substrate, achieving a lateral size of approximately 50 µm. Second-harmonic generation (SHG) characterization confirms the non-centrosymmetric crystal structure of the wide-bandgap MoS2, indicative of its piezoelectric properties. We successfully transferred the triangular MoS2 to a polyethylene terephthalate (PET) flexible substrate using a wet-transfer method and developed a wide-bandgap MoS2-based micro-displacement sensor employing maskless lithography and hot evaporation techniques. Our testing revealed a piezoelectric response current of 5.12 nA in the sensor under a strain of 0.003% along the armchair direction of the monolayer MoS2. Furthermore, the sensor exhibited a near-linear relationship between the piezoelectric response current and the strain within a displacement range of 40-100 µm, with a calculated response sensitivity of 1.154 µA/%. This research introduces a novel micro-displacement sensor, offering potential for advanced surface texture sensing in various applications.
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Affiliation(s)
- Shaopeng Wang
- College of Mechanical and Vehicle Engineering, Taiyuan University of Technology, Taiyuan 030024, China; (S.W.); (J.H.)
| | - Jiahai Huang
- College of Mechanical and Vehicle Engineering, Taiyuan University of Technology, Taiyuan 030024, China; (S.W.); (J.H.)
| | - Yizhang Wu
- College of Science, Hohai University, Nanjing 211100, China;
- Department of Applied Physical Sciences, The University of North Carolina at Chapel Hill, Chapel Hill, NC 25714, USA
| | - Huimin Hao
- College of Mechanical and Vehicle Engineering, Taiyuan University of Technology, Taiyuan 030024, China; (S.W.); (J.H.)
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9
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Karkee R, Strubbe DA. Panoply of Ni-Doping-Induced Reconstructions, Electronic Phases, and Ferroelectricity in 1T-MoS 2. J Phys Chem Lett 2024; 15:565-574. [PMID: 38198283 DOI: 10.1021/acs.jpclett.3c03175] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/12/2024]
Abstract
The distorted phases of monolayer 1T-MoS2 have distinct electronic properties, with potential applications in optoelectronics, catalysis, and batteries. We theoretically investigate the use of Ni-doping to generate distorted 1T phases and find not only the ones usually reported but also two further phases (3 × 3 and 4 × 4), depending on the concentration and the substitutional or adatom doping site. Corresponding pristine phases are stable after removal of dopants, which might offer a potential route to experimental synthesis. We find large ferroelectric polarizations, most notably in 3 × 3 which─compared to the recently measured 1T″─has 100 times greater ferroelectric polarization, a lower energy, and a larger band gap. Doped phases include exotic multiferroic semimetals, ferromagnetic polar metals, and improper ferroelectrics with only in-plane polarization switchable. The pristine phases have unusual multiple gaps in the conduction bands with possible applications for intermediate band solar cells, transparent conductors, and nonlinear optics.
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Affiliation(s)
- Rijan Karkee
- Department of Physics, University of California, Merced, California 95343, United States
| | - David A Strubbe
- Department of Physics, University of California, Merced, California 95343, United States
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10
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Yun Q, Ge Y, Shi Z, Liu J, Wang X, Zhang A, Huang B, Yao Y, Luo Q, Zhai L, Ge J, Peng Y, Gong C, Zhao M, Qin Y, Ma C, Wang G, Wa Q, Zhou X, Li Z, Li S, Zhai W, Yang H, Ren Y, Wang Y, Li L, Ruan X, Wu Y, Chen B, Lu Q, Lai Z, He Q, Huang X, Chen Y, Zhang H. Recent Progress on Phase Engineering of Nanomaterials. Chem Rev 2023. [PMID: 37962496 DOI: 10.1021/acs.chemrev.3c00459] [Citation(s) in RCA: 4] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/15/2023]
Abstract
As a key structural parameter, phase depicts the arrangement of atoms in materials. Normally, a nanomaterial exists in its thermodynamically stable crystal phase. With the development of nanotechnology, nanomaterials with unconventional crystal phases, which rarely exist in their bulk counterparts, or amorphous phase have been prepared using carefully controlled reaction conditions. Together these methods are beginning to enable phase engineering of nanomaterials (PEN), i.e., the synthesis of nanomaterials with unconventional phases and the transformation between different phases, to obtain desired properties and functions. This Review summarizes the research progress in the field of PEN. First, we present representative strategies for the direct synthesis of unconventional phases and modulation of phase transformation in diverse kinds of nanomaterials. We cover the synthesis of nanomaterials ranging from metal nanostructures such as Au, Ag, Cu, Pd, and Ru, and their alloys; metal oxides, borides, and carbides; to transition metal dichalcogenides (TMDs) and 2D layered materials. We review synthesis and growth methods ranging from wet-chemical reduction and seed-mediated epitaxial growth to chemical vapor deposition (CVD), high pressure phase transformation, and electron and ion-beam irradiation. After that, we summarize the significant influence of phase on the various properties of unconventional-phase nanomaterials. We also discuss the potential applications of the developed unconventional-phase nanomaterials in different areas including catalysis, electrochemical energy storage (batteries and supercapacitors), solar cells, optoelectronics, and sensing. Finally, we discuss existing challenges and future research directions in PEN.
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Affiliation(s)
- Qinbai Yun
- Department of Chemistry, City University of Hong Kong, Kowloon, Hong Kong, China
- Department of Chemical and Biological Engineering & Energy Institute, The Hong Kong University of Science and Technology, Hong Kong, China
| | - Yiyao Ge
- School of Materials Science and Engineering, Peking University, Beijing 100871, China
| | - Zhenyu Shi
- Department of Chemistry, City University of Hong Kong, Kowloon, Hong Kong, China
| | - Jiawei Liu
- Institute of Sustainability for Chemicals, Energy and Environment, Agency for Science, Technology and Research (A*STAR), Singapore, 627833, Singapore
| | - Xixi Wang
- Department of Chemistry, City University of Hong Kong, Kowloon, Hong Kong, China
| | - An Zhang
- Department of Chemistry, City University of Hong Kong, Kowloon, Hong Kong, China
| | - Biao Huang
- Department of Chemistry, City University of Hong Kong, Kowloon, Hong Kong, China
- Hong Kong Branch of National Precious Metals Material Engineering Research Center (NPMM), City University of Hong Kong, Hong Kong, China
| | - Yao Yao
- Department of Chemistry, City University of Hong Kong, Kowloon, Hong Kong, China
| | - Qinxin Luo
- Department of Chemistry, City University of Hong Kong, Kowloon, Hong Kong, China
| | - Li Zhai
- Department of Chemistry, City University of Hong Kong, Kowloon, Hong Kong, China
- Hong Kong Branch of National Precious Metals Material Engineering Research Center (NPMM), City University of Hong Kong, Hong Kong, China
| | - Jingjie Ge
- Department of Applied Biology and Chemical Technology, The Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong SAR
| | - Yongwu Peng
- College of Materials Science and Engineering, Zhejiang University of Technology, Hangzhou 310014, China
| | - Chengtao Gong
- College of Materials Science and Engineering, Zhejiang University of Technology, Hangzhou 310014, China
| | - Meiting Zhao
- Institute of Molecular Aggregation Science, Department of Chemistry, Tianjin Key Laboratory of Molecular Optoelectronic Sciences, Tianjin University, Tianjin 300072, China
| | - Yutian Qin
- Institute of Molecular Aggregation Science, Department of Chemistry, Tianjin Key Laboratory of Molecular Optoelectronic Sciences, Tianjin University, Tianjin 300072, China
| | - Chen Ma
- Department of Chemistry, The Chinese University of Hong Kong, Shatin, Hong Kong, China
| | - Gang Wang
- Department of Chemistry, The Chinese University of Hong Kong, Shatin, Hong Kong, China
| | - Qingbo Wa
- Department of Chemistry, City University of Hong Kong, Kowloon, Hong Kong, China
| | - Xichen Zhou
- Department of Chemistry, City University of Hong Kong, Kowloon, Hong Kong, China
| | - Zijian Li
- Department of Chemistry, City University of Hong Kong, Kowloon, Hong Kong, China
| | - Siyuan Li
- Department of Chemistry, City University of Hong Kong, Kowloon, Hong Kong, China
| | - Wei Zhai
- Department of Chemistry, City University of Hong Kong, Kowloon, Hong Kong, China
| | - Hua Yang
- Department of Chemistry, City University of Hong Kong, Kowloon, Hong Kong, China
| | - Yi Ren
- Department of Chemistry, City University of Hong Kong, Kowloon, Hong Kong, China
| | - Yongji Wang
- Department of Chemistry, City University of Hong Kong, Kowloon, Hong Kong, China
| | - Lujing Li
- Department of Chemistry, City University of Hong Kong, Kowloon, Hong Kong, China
| | - Xinyang Ruan
- Department of Chemistry, City University of Hong Kong, Kowloon, Hong Kong, China
| | - Yuxuan Wu
- Department of Chemistry, City University of Hong Kong, Kowloon, Hong Kong, China
| | - Bo Chen
- State Key Laboratory of Organic Electronics and Information Displays & Jiangsu Key Laboratory for Biosensors, Institute of Advanced Materials, School of Chemistry and Life Sciences, Nanjing University of Posts and Telecommunications, Nanjing 210023, China
| | - Qipeng Lu
- School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing 100083, China
| | - Zhuangchai Lai
- Department of Applied Physics, The Hong Kong Polytechnic University, Hong Kong SAR, China
| | - Qiyuan He
- Department of Materials Science and Engineering, City University of Hong Kong, Hong Kong SAR, China
| | - Xiao Huang
- Institute of Advanced Materials (IAM), School of Flexible Electronics (SoFE), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing Tech University (NanjingTech), Nanjing 211816, China
| | - Ye Chen
- Department of Chemistry, The Chinese University of Hong Kong, Shatin, Hong Kong, China
| | - Hua Zhang
- Department of Chemistry, City University of Hong Kong, Kowloon, Hong Kong, China
- Hong Kong Branch of National Precious Metals Material Engineering Research Center (NPMM), City University of Hong Kong, Hong Kong, China
- Shenzhen Research Institute, City University of Hong Kong, Shenzhen 518057, China
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11
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Han F, Yan X, Bergara A, Li W, Yu H, Yang G. A Janus CrSSe monolayer with interesting ferromagnetism. Phys Chem Chem Phys 2023; 25:29672-29679. [PMID: 37882360 DOI: 10.1039/d3cp04584f] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 10/27/2023]
Abstract
The search for intrinsic half-metallic ferromagnetic (FM) monolayers with a high Curie temperature (TC), considerable magnetic anisotropy energy (MAE), and multiferroic coupling is key for the development of ultra-compact spintronics. Here, we have identified a new stable FM Janus monolayer, the tetrahedral CrSSe, through first-principles structural search calculations, which not only exhibits very interesting magnetoelectric properties with a high TC of 790 K, a large MAE of 0.622 meV per Cr, and robust half-metallicity, but also shows obvious ferroelasticity with a modest energy barrier of 0.31 eV per atom. Additionally, there appears to be interesting multiferroic coupling between in-plane magnetization and ferroelasticity. Furthermore, by replacing the Se/S atoms in the CrSSe monolayer with S/Se atoms, we obtained two new half-metallic FM CrS2 and CrSe2 monolayers, which also exhibit excellent magnetoelectric properties. Therefore, our findings provide a pathway to design novel multiferroic materials and enrich the understanding of 2D transition metal chalcogenides.
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Affiliation(s)
- Fanjunjie Han
- Centre for Advanced Optoelectronic Functional Materials Research and Key Laboratory for UV Light-Emitting Materials and Technology of Ministry of Education, Northeast Normal University, Changchun 130024, China.
| | - Xu Yan
- State Key Laboratory of Metastable Materials Science & Technology and Key Laboratory for Microstructural Material Physics of Hebei Province, School of Science, Yanshan University, Qinhuangdao 066004, China
| | - Aitor Bergara
- Departmento de Física y EHU Quantum Center, Universidad del País Vasco, UPV/EHU, 48080 Bilbao, Spain.
- Donostia International Physics Center (DIPC), 20018 Donostia, Spain
- Centro de Física de Materiales CFM, Centro Mixto CSIC-UPV/EHU, 20018 Donostia, Spain
| | - Wenjing Li
- Centre for Advanced Optoelectronic Functional Materials Research and Key Laboratory for UV Light-Emitting Materials and Technology of Ministry of Education, Northeast Normal University, Changchun 130024, China.
| | - Hong Yu
- Centre for Advanced Optoelectronic Functional Materials Research and Key Laboratory for UV Light-Emitting Materials and Technology of Ministry of Education, Northeast Normal University, Changchun 130024, China.
| | - Guochun Yang
- Centre for Advanced Optoelectronic Functional Materials Research and Key Laboratory for UV Light-Emitting Materials and Technology of Ministry of Education, Northeast Normal University, Changchun 130024, China.
- State Key Laboratory of Metastable Materials Science & Technology and Key Laboratory for Microstructural Material Physics of Hebei Province, School of Science, Yanshan University, Qinhuangdao 066004, China
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12
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Liu Y, Guo W, Hua L, Zeng X, Yang T, Fan Q, Ma Y, Gao C, Sun Z, Luo J. Giant Polarization Sensitivity via the Anomalous Photovoltaic Effect in a Two-Dimensional Perovskite Ferroelectric. J Am Chem Soc 2023; 145:16193-16199. [PMID: 37462120 DOI: 10.1021/jacs.3c05020] [Citation(s) in RCA: 2] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 07/27/2023]
Abstract
Polarization sensitivity, which shows great potential in photoelectric detection, is expected to be significantly improved by the ferroelectric anomalous photovoltaic (APV) effect. However, it is challenging to explore new APV-active ferroelectrics due to severe polarization fatigue induced by the leakage current of photoexcited carriers. For the first time, we report a strong APV effect in a 2D hybrid perovskite ferroelectric assembled by alloying mixed organic cations, (HA)2(EA)2Pb3Br10 (1, where HA+ is n-hexylammonium and EA+ is ethylammonium), which has a large spontaneous polarization ∼3.8 μC/cm2 and high a Curie temperature ∼378 K. Its ferroelectricity allows a strong APV effect with an above-bandgap photovoltage up to 7.4 V, which exceeds its bandgap (∼2.7 eV). Most strikingly, based on the dependence on polarized-light angle, this strong APV effect renders the highest level of polarization sensitivity with a giant current ratio of ∼25, far beyond other 2D single-phase materials. This study sheds light on the exploration of APV-active ferroelectrics and inspires their future high-performance optoelectronic device applications.
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Affiliation(s)
- Yi Liu
- State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou 350002, Fujian, People's Republic of China
| | - Wuqian Guo
- State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou 350002, Fujian, People's Republic of China
- University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing 100039, People's Republic of China
| | - Lina Hua
- State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou 350002, Fujian, People's Republic of China
| | - Xi Zeng
- State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou 350002, Fujian, People's Republic of China
| | - Tian Yang
- State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou 350002, Fujian, People's Republic of China
| | - Qingshun Fan
- State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou 350002, Fujian, People's Republic of China
| | - Yu Ma
- State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou 350002, Fujian, People's Republic of China
- University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing 100039, People's Republic of China
| | - Changhao Gao
- State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou 350002, Fujian, People's Republic of China
| | - Zhihua Sun
- State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou 350002, Fujian, People's Republic of China
- University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing 100039, People's Republic of China
- Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou 350108, Fujian, People's Republic of China
| | - Junhua Luo
- State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou 350002, Fujian, People's Republic of China
- University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing 100039, People's Republic of China
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13
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Zheng J, Zhang H, Lv J, Zhang M, Wan J, Gerrits N, Wu A, Lan B, Wang W, Wang S, Tu X, Bogaerts A, Li X. Enhanced NH 3 Synthesis from Air in a Plasma Tandem-Electrocatalysis System Using Plasma-Engraved N-Doped Defective MoS 2. JACS AU 2023; 3:1328-1336. [PMID: 37234124 PMCID: PMC10207100 DOI: 10.1021/jacsau.3c00087] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 02/20/2023] [Revised: 04/12/2023] [Accepted: 04/13/2023] [Indexed: 05/27/2023]
Abstract
We have developed a sustainable method to produce NH3 directly from air using a plasma tandem-electrocatalysis system that operates via the N2-NOx-NH3 pathway. To efficiently reduce NO2- to NH3, we propose a novel electrocatalyst consisting of defective N-doped molybdenum sulfide nanosheets on vertical graphene arrays (N-MoS2/VGs). We used a plasma engraving process to form the metallic 1T phase, N doping, and S vacancies in the electrocatalyst simultaneously. Our system exhibited a remarkable NH3 production rate of 7.3 mg h-1 cm-2 at -0.53 V vs RHE, which is almost 100 times higher than the state-of-the-art electrochemical nitrogen reduction reaction and more than double that of other hybrid systems. Moreover, a low energy consumption of only 2.4 MJ molNH3-1 was achieved in this study. Density functional theory calculations revealed that S vacancies and doped N atoms play a dominant role in the selective reduction of NO2- to NH3. This study opens up new avenues for efficient NH3 production using cascade systems.
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Affiliation(s)
- Jiageng Zheng
- State
Key Laboratory of Clean Energy Utilization, College of Energy and
Engineering, Academy of Ecological Civilization, Zhejiang University, Hangzhou 310027, China
| | - Hao Zhang
- State
Key Laboratory of Clean Energy Utilization, College of Energy and
Engineering, Academy of Ecological Civilization, Zhejiang University, Hangzhou 310027, China
| | - Jiabao Lv
- State
Key Laboratory of Clean Energy Utilization, College of Energy and
Engineering, Academy of Ecological Civilization, Zhejiang University, Hangzhou 310027, China
| | - Meng Zhang
- College
of Optical Science and Engineering, Zhejiang
University, Hangzhou 310027, China
| | - Jieying Wan
- State
Key Laboratory of Clean Energy Utilization, College of Energy and
Engineering, Academy of Ecological Civilization, Zhejiang University, Hangzhou 310027, China
| | - Nick Gerrits
- Research
Group PLASMANT, Department of Chemistry, University of Antwerp, Universiteitsplein 1, BE-2610 Wilrijk, Belgium
| | - Angjian Wu
- State
Key Laboratory of Clean Energy Utilization, College of Energy and
Engineering, Academy of Ecological Civilization, Zhejiang University, Hangzhou 310027, China
| | - Bingru Lan
- State
Key Laboratory of Clean Energy Utilization, College of Energy and
Engineering, Academy of Ecological Civilization, Zhejiang University, Hangzhou 310027, China
| | - Weitao Wang
- Department
of Electrical Engineering and Electronics, University of Liverpool, Liverpool L69 3GJ, U.K.
| | - Shuangyin Wang
- State
Key Laboratory of Chem/Bio-Sensing and Chemometrics, College of Chemistry
and Chemical Engineering, Hunan University, Changsha 410082, China
| | - Xin Tu
- Department
of Electrical Engineering and Electronics, University of Liverpool, Liverpool L69 3GJ, U.K.
| | - Annemie Bogaerts
- Research
Group PLASMANT, Department of Chemistry, University of Antwerp, Universiteitsplein 1, BE-2610 Wilrijk, Belgium
| | - Xiaodong Li
- State
Key Laboratory of Clean Energy Utilization, College of Energy and
Engineering, Academy of Ecological Civilization, Zhejiang University, Hangzhou 310027, China
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14
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Hartmann R, Högen M, Lignon D, Tan AKC, Amado M, El-Khatib S, Egilmez M, Das B, Leighton C, Atatüre M, Scheer E, Di Bernardo A. Intrinsic giant magnetoresistance due to exchange-bias-type effects at the surface of single-crystalline NiS 2 nanoflakes. NANOSCALE 2023. [PMID: 37184489 DOI: 10.1039/d3nr00467h] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/16/2023]
Abstract
The coexistence of different properties in the same material often results in exciting physical effects. At low temperatures, the pyrite transition-metal disulphide NiS2 hosts both antiferromagnetic and weak ferromagnetic orders, along with surface metallicity dominating its electronic transport. The interplay between such a complex magnetic structure and surface-dominated conduction in NiS2, however, is still not understood. A possible reason for this limited understanding is that NiS2 has been available primarily in bulk single-crystal form, which makes it difficult to perform studies combining magnetometry and transport measurements with high spatial resolution. Here, NiS2 nanoflakes are produced via mechanical cleaving and exfoliation of NiS2 single crystals and their properties are studied on a local (micron-size) scale. Strongly field-asymmetric magnetotransport features are found at low temperatures, which resemble those of more complex magnetic thin film heterostructures. Using nitrogen vacancy magnetometry, these magnetotransport features are related to exchange-bias-type effects between ferromagnetic and antiferromagnetic regions forming near step edges at the nanoflake surface. Nanoflakes with bigger steps exhibit giant magnetoresistance, which suggests a strong influence of magnetic spin textures at the NiS2 surface on its electronic transport. These findings pave the way for the application of NiS2 nanoflakes in van der Waals heterostructures for low-temperature spintronics and superconducting spintronics.
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Affiliation(s)
- Roman Hartmann
- Department of Physics, University of Konstanz, Konstanz 78457, Germany.
| | - Michael Högen
- Cavendish Laboratory, University of Cambridge, Cambridge CB3 0HE, UK
| | - Daphné Lignon
- Department of Physics, University of Konstanz, Konstanz 78457, Germany.
| | - Anthony K C Tan
- Cavendish Laboratory, University of Cambridge, Cambridge CB3 0HE, UK
| | - Mario Amado
- Nanotechnology Group, University of Salamanca, Salamanca 37008, Spain
| | - Sami El-Khatib
- Department of Physics, American University of Sharjah, Sharjah 26666, United Arab Emirates
| | - Mehmet Egilmez
- Department of Physics, American University of Sharjah, Sharjah 26666, United Arab Emirates
| | - Bhaskar Das
- Department of Chemical Engineering and Materials Science, University of Minnesota, Minneapolis, MN 55455, USA
| | - Chris Leighton
- Department of Chemical Engineering and Materials Science, University of Minnesota, Minneapolis, MN 55455, USA
| | - Mete Atatüre
- Cavendish Laboratory, University of Cambridge, Cambridge CB3 0HE, UK
| | - Elke Scheer
- Department of Physics, University of Konstanz, Konstanz 78457, Germany.
| | - Angelo Di Bernardo
- Department of Physics, University of Konstanz, Konstanz 78457, Germany.
- Dipartimento di Fisica "E. R. Caianiello", Università degli Studi di Salerno, 84084 Fisciano, SA, Italy
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15
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Fang Y, Feng X, Wang D, Ding Y, Lin T, Zhai T, Huang F. Polarization-Independent Second Harmonic Generation in 2D Van Der Waals Kagome Nb 3 SeI 7 Crystals. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2023:e2207934. [PMID: 36942685 DOI: 10.1002/smll.202207934] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/19/2022] [Revised: 02/27/2023] [Indexed: 06/18/2023]
Abstract
Second harmonic generation (SHG) of 2D crystals has been of great interest due to its advantages of phase-matching and easy integration into nanophotonic devices. However, the polarization-dependence character of the SHG signal makes it highly troublesome but necessary to match the laser polarization orientation relative to the crystal, thus achieving the maximum polarized SHG intensity. Here, it is demonstrated a polarization-independent SHG, for the first time, in the van der Waals Nb3 SeI7 crystals with a breathing Kagome lattice. The Nb3 triangular clusters and Janus-structure of each Nb3 SeI7 layer are confirmed by the STEM. Nb3 SeI7 flake shows a strong SHG response due to its noncentrosymmetric crystal structure. More interestingly, the SHG signals of Nb3 SeI7 are independent of the polarization of the excitation light owing to the in-plane isotropic arrangement of nonlinear active units. This work provides the first layered nonlinear optical crystal with the polarization-independent SHG effect, providing new possibilities for nonlinear optics.
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Affiliation(s)
- Yuqiang Fang
- State Key Laboratory of High-Performance Ceramics and Super fine Microstructure, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai, 200050, P. R. China
| | - Xin Feng
- State Key Laboratory of Material Processing and Die & Mold Technology, School of Materials Science and Technology, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China
| | - Dong Wang
- Center for High-Pressure Science and Technology Advanced Research, Beijing, 100094, P. R. China
| | - Yang Ding
- Center for High-Pressure Science and Technology Advanced Research, Beijing, 100094, P. R. China
| | - Tianquan Lin
- School of Materials Science and Engineering, Shanghai Jiao Tong University, Shanghai, 200240, P. R. China
| | - Tianyou Zhai
- State Key Laboratory of Material Processing and Die & Mold Technology, School of Materials Science and Technology, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China
| | - Fuqiang Huang
- State Key Laboratory of High-Performance Ceramics and Super fine Microstructure, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai, 200050, P. R. China
- State Key Laboratory of Rare Earth Materials Chemistry and Applications, College of Chemistry and Molecular Engineering, Peking University, Beijing, 100871, P. R. China
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16
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Zhao C, Fang Y, Chen H, Zhang S, Wan Y, Riaz MS, Zhang Z, Dong W, Diao L, Ren D, Huang F. Ultrathin Mo 2S 3 Nanowire Network for High-Sensitivity Breathable Piezoresistive Electronic Skins. ACS NANO 2023; 17:4862-4870. [PMID: 36825732 DOI: 10.1021/acsnano.2c11564] [Citation(s) in RCA: 5] [Impact Index Per Article: 5.0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/18/2023]
Abstract
Flexible piezosensing electronic skins (e-skins) have attracted considerable interest owing to their applications in real-time human-health monitoring, human-machine interactions, and soft bionic robot perception. However, the fabrication of piezosensing e-skins with high sensitivity, biological affinity, and good permeability at the same time is challenging. Herein, we designed and synthesized Mo2S3 nanowires by inserting ∞1[Mo2+S] chains between MoS2 interlayers. The resulting Mo2S3 nanowires feature high conductivity (4.9 × 104 S m-1) and a high aspect ratio (∼200). An ultrathin (∼500 nm) Mo2S3 nanowire network was fabricated using a simple liquid/liquid interface self-assembly method, showing high piezoresistive sensitivity (5.65 kPa-1), a considerably low pressure detection limit (0.08 Pa), and gratifying air permeability. Moreover, this nanowire network can be directly attached to human skin for real-time human pulse detection, finger movement monitoring, and sign language recognition, exhibiting excellent potential for health monitoring and human-machine interactions.
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Affiliation(s)
- Chendong Zhao
- State Key Laboratory of High Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai, 200050, People's Republic of China
- University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China
| | - Yuqiang Fang
- State Key Laboratory of High Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai, 200050, People's Republic of China
| | - Hao Chen
- Key Laboratory of Pressure Systems and Safety, Ministry of Education, School of Mechanical and Power Engineering, East China University of Science and Technology, Shanghai, 200237, People's Republic of China
| | - Shaoning Zhang
- State Key Laboratory of High Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai, 200050, People's Republic of China
| | - Yingjie Wan
- State Key Laboratory of High Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai, 200050, People's Republic of China
- University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China
| | - Muhammad Sohail Riaz
- Key Laboratory of the Ministry of Education for Advanced Catalysis Materials, Department of Chemistry, Zhejiang Normal University, Jinhua 321004, People's Republic ofChina
| | - Zhuang Zhang
- State Key Laboratory of High Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai, 200050, People's Republic of China
- University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China
| | - Wujie Dong
- State Key Laboratory of High Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai, 200050, People's Republic of China
| | - Lei Diao
- State Key Laboratory of Cell Biology, Shanghai Institute of Biochemistry and Cell Biology, Center for Excellence in Molecular Cell Science, University of Chinese Academy of Sciences, Chinese Academy of Sciences, Shanghai 200031, People's Republic ofChina
| | - Dayong Ren
- State Key Laboratory of High Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai, 200050, People's Republic of China
| | - Fuqiang Huang
- State Key Laboratory of High Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai, 200050, People's Republic of China
- Beijing National Laboratory for Molecular Sciences and State Key Laboratory of Rare Earth Materials Chemistry and Applications, College of Chemistry and Molecular Engineering, Peking University, Beijing 100871, People's Republic of China
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17
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Xiao Y, Xiong C, Chen MM, Wang S, Fu L, Zhang X. Structure modulation of two-dimensional transition metal chalcogenides: recent advances in methodology, mechanism and applications. Chem Soc Rev 2023; 52:1215-1272. [PMID: 36601686 DOI: 10.1039/d1cs01016f] [Citation(s) in RCA: 18] [Impact Index Per Article: 18.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/06/2023]
Abstract
Together with the development of two-dimensional (2D) materials, transition metal dichalcogenides (TMDs) have become one of the most popular series of model materials for fundamental sciences and practical applications. Due to the ever-growing requirements of customization and multi-function, dozens of modulated structures have been introduced in TMDs. In this review, we present a systematic and comprehensive overview of the structure modulation of TMDs, including point, linear and out-of-plane structures, following and updating the conventional classification for silicon and related bulk semiconductors. In particular, we focus on the structural characteristics of modulated TMD structures and analyse the corresponding root causes. We also summarize the recent progress in modulating methods, mechanisms, properties and applications based on modulated TMD structures. Finally, we demonstrate challenges and prospects in the structure modulation of TMDs and forecast potential directions about what and how breakthroughs can be achieved.
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Affiliation(s)
- Yao Xiao
- Collaborative Innovation Centre for Advanced Organic Chemical Materials Co-Constructed by the Province and Ministry, Ministry of Education Key Laboratory for the Synthesis and Application of Organic Functional Molecules, College of Chemistry and Chemical Engineering, Hubei University, Wuhan 430062, P. R. China.
| | - Chengyi Xiong
- Collaborative Innovation Centre for Advanced Organic Chemical Materials Co-Constructed by the Province and Ministry, Ministry of Education Key Laboratory for the Synthesis and Application of Organic Functional Molecules, College of Chemistry and Chemical Engineering, Hubei University, Wuhan 430062, P. R. China.
| | - Miao-Miao Chen
- Collaborative Innovation Centre for Advanced Organic Chemical Materials Co-Constructed by the Province and Ministry, Ministry of Education Key Laboratory for the Synthesis and Application of Organic Functional Molecules, College of Chemistry and Chemical Engineering, Hubei University, Wuhan 430062, P. R. China.
| | - Shengfu Wang
- Collaborative Innovation Centre for Advanced Organic Chemical Materials Co-Constructed by the Province and Ministry, Ministry of Education Key Laboratory for the Synthesis and Application of Organic Functional Molecules, College of Chemistry and Chemical Engineering, Hubei University, Wuhan 430062, P. R. China.
| | - Lei Fu
- The Institute for Advanced Studies (IAS), Wuhan University, Wuhan 430072, P. R. China. .,College of Chemistry and Molecular Sciences, Wuhan University, Wuhan 430072, P. R. China.
| | - Xiuhua Zhang
- Collaborative Innovation Centre for Advanced Organic Chemical Materials Co-Constructed by the Province and Ministry, Ministry of Education Key Laboratory for the Synthesis and Application of Organic Functional Molecules, College of Chemistry and Chemical Engineering, Hubei University, Wuhan 430062, P. R. China.
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18
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Giri A, Park G, Jeong U. Layer-Structured Anisotropic Metal Chalcogenides: Recent Advances in Synthesis, Modulation, and Applications. Chem Rev 2023; 123:3329-3442. [PMID: 36719999 PMCID: PMC10103142 DOI: 10.1021/acs.chemrev.2c00455] [Citation(s) in RCA: 11] [Impact Index Per Article: 11.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 02/01/2023]
Abstract
The unique electronic and catalytic properties emerging from low symmetry anisotropic (1D and 2D) metal chalcogenides (MCs) have generated tremendous interest for use in next generation electronics, optoelectronics, electrochemical energy storage devices, and chemical sensing devices. Despite many proof-of-concept demonstrations so far, the full potential of anisotropic chalcogenides has yet to be investigated. This article provides a comprehensive overview of the recent progress made in the synthesis, mechanistic understanding, property modulation strategies, and applications of the anisotropic chalcogenides. It begins with an introduction to the basic crystal structures, and then the unique physical and chemical properties of 1D and 2D MCs. Controlled synthetic routes for anisotropic MC crystals are summarized with example advances in the solution-phase synthesis, vapor-phase synthesis, and exfoliation. Several important approaches to modulate dimensions, phases, compositions, defects, and heterostructures of anisotropic MCs are discussed. Recent significant advances in applications are highlighted for electronics, optoelectronic devices, catalysts, batteries, supercapacitors, sensing platforms, and thermoelectric devices. The article ends with prospects for future opportunities and challenges to be addressed in the academic research and practical engineering of anisotropic MCs.
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Affiliation(s)
- Anupam Giri
- Department of Chemistry, Faculty of Science, University of Allahabad, Prayagraj, UP-211002, India
| | - Gyeongbae Park
- Department of Materials Science and Engineering, Pohang University of Science and Technology, Cheongam-Ro 77, Nam-Gu, Pohang, Gyeongbuk790-784, Korea.,Functional Materials and Components R&D Group, Korea Institute of Industrial Technology, Gwahakdanji-ro 137-41, Sacheon-myeon, Gangneung, Gangwon-do25440, Republic of Korea
| | - Unyong Jeong
- Department of Materials Science and Engineering, Pohang University of Science and Technology, Cheongam-Ro 77, Nam-Gu, Pohang, Gyeongbuk790-784, Korea
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19
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You J, Pan J, Shang SL, Xu X, Liu Z, Li J, Liu H, Kang T, Xu M, Li S, Kong D, Wang W, Gao Z, Zhou X, Zhai T, Liu ZK, Kim JK, Luo Z. Salt-Assisted Selective Growth of H-phase Monolayer VSe 2 with Apparent Hole Transport Behavior. NANO LETTERS 2022; 22:10167-10175. [PMID: 36475688 DOI: 10.1021/acs.nanolett.2c04133] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/17/2023]
Abstract
Vanadium diselenide (VSe2) exhibits versatile electronic and magnetic properties in the trigonal prismatic (H-) and octahedral (T-) phases. Compared to the metallic T-phase, the H-phase with a tunable semiconductor property is predicted to be a ferrovalley material with spontaneous valley polarization. Herein we report an epitaxial growth of the monolayer 2D VSe2 on a mica substrate via the chemical vapor deposition (CVD) method by introducing salt in the precursor. Our first-principles calculations suggest that the monolayer H-phase VSe2 with a large lateral size is thermodynamically favorable. The honeycomb-like structure and the broken symmetry are directly observed by spherical aberration-corrected scanning transmission electron microscopy (STEM) and confirmed by giant second harmonic generation (SHG) intensity. The p-type transport behavior is further evidenced by the temperature-dependent resistance and field-effect device study. The present work introduces a new phase-stable 2D transition metal dichalcogenide, opening the prospect of novel electronic and spintronics device design.
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Affiliation(s)
- Jiawen You
- Department of Chemical and Biological Engineering, Guangdong-Hong Kong-Macao Joint Laboratory for Intelligent Micro-Nano Optoelectronic Technology, William Mong Institute of Nano Science and Technology and Hong Kong Branch of Chinese National Engineering Research Center for Tissue Restoration and Reconstruction, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong999777, P. R. China
| | - Jie Pan
- Department of Physics, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong999777, P. R. China
| | - Shun-Li Shang
- Department of Materials Science and Engineering, The Pennsylvania State University, University Park, Pennsylvania16802, United States
| | - Xiang Xu
- School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan430074, P. R. China
| | - Zhenjing Liu
- Department of Chemical and Biological Engineering, Guangdong-Hong Kong-Macao Joint Laboratory for Intelligent Micro-Nano Optoelectronic Technology, William Mong Institute of Nano Science and Technology and Hong Kong Branch of Chinese National Engineering Research Center for Tissue Restoration and Reconstruction, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong999777, P. R. China
| | - Jingwei Li
- Department of Chemical and Biological Engineering, Guangdong-Hong Kong-Macao Joint Laboratory for Intelligent Micro-Nano Optoelectronic Technology, William Mong Institute of Nano Science and Technology and Hong Kong Branch of Chinese National Engineering Research Center for Tissue Restoration and Reconstruction, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong999777, P. R. China
| | - Hongwei Liu
- Department of Chemical and Biological Engineering, Guangdong-Hong Kong-Macao Joint Laboratory for Intelligent Micro-Nano Optoelectronic Technology, William Mong Institute of Nano Science and Technology and Hong Kong Branch of Chinese National Engineering Research Center for Tissue Restoration and Reconstruction, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong999777, P. R. China
| | - Ting Kang
- Department of Chemical and Biological Engineering, Guangdong-Hong Kong-Macao Joint Laboratory for Intelligent Micro-Nano Optoelectronic Technology, William Mong Institute of Nano Science and Technology and Hong Kong Branch of Chinese National Engineering Research Center for Tissue Restoration and Reconstruction, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong999777, P. R. China
| | - Mengyang Xu
- Department of Chemical and Biological Engineering, Guangdong-Hong Kong-Macao Joint Laboratory for Intelligent Micro-Nano Optoelectronic Technology, William Mong Institute of Nano Science and Technology and Hong Kong Branch of Chinese National Engineering Research Center for Tissue Restoration and Reconstruction, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong999777, P. R. China
| | - Shaobo Li
- Department of Chemical and Biological Engineering, Guangdong-Hong Kong-Macao Joint Laboratory for Intelligent Micro-Nano Optoelectronic Technology, William Mong Institute of Nano Science and Technology and Hong Kong Branch of Chinese National Engineering Research Center for Tissue Restoration and Reconstruction, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong999777, P. R. China
- State Key Laboratory of Luminescent Materials and Devices, Department of Electronic Materials, School of Materials Science and Engineering, South China University of Technology, Guangzhou, 510640, P. R. China
| | - Deqi Kong
- State Key Laboratory of Luminescent Materials and Devices, Department of Electronic Materials, School of Materials Science and Engineering, South China University of Technology, Guangzhou, 510640, P. R. China
| | - Wenliang Wang
- Department of Chemical and Biological Engineering, Guangdong-Hong Kong-Macao Joint Laboratory for Intelligent Micro-Nano Optoelectronic Technology, William Mong Institute of Nano Science and Technology and Hong Kong Branch of Chinese National Engineering Research Center for Tissue Restoration and Reconstruction, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong999777, P. R. China
- State Key Laboratory of Luminescent Materials and Devices, Department of Electronic Materials, School of Materials Science and Engineering, South China University of Technology, Guangzhou, 510640, P. R. China
| | - Zhaoli Gao
- Department of Biomedical Engineering, Chinese University of Hong Kong, Shatin, New Territories, Hong Kong999777, P. R. China
- CUHK Shenzhen Research Institute, No.10, second, Yuexing Road, Nanshan, Shenzhen518057, P. R. China
| | - Xing Zhou
- School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan430074, P. R. China
| | - Tianyou Zhai
- School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan430074, P. R. China
| | - Zi-Kui Liu
- Department of Materials Science and Engineering, The Pennsylvania State University, University Park, Pennsylvania16802, United States
| | - Jang-Kyo Kim
- Department of Mechanical and Aerospace Engineering, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong999777, P. R. China
| | - Zhengtang Luo
- Department of Chemical and Biological Engineering, Guangdong-Hong Kong-Macao Joint Laboratory for Intelligent Micro-Nano Optoelectronic Technology, William Mong Institute of Nano Science and Technology and Hong Kong Branch of Chinese National Engineering Research Center for Tissue Restoration and Reconstruction, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong999777, P. R. China
- The Hong Kong University of Science and Technology Shenzhen Research Institute, No. 9 Yuexing first RD, South Area Hi-tech Park, Nanshan, Shenzhen518057, China
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20
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Fang Y, Lv X, Lv Z, Wang Y, Zheng G, Huang F. Electron-Extraction Engineering Induced 1T''-1T' Phase Transition of Re 0.75 V 0.25 Se 2 for Ultrafast Sodium Ion Storage. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2022; 9:e2205680. [PMID: 36372525 PMCID: PMC9798975 DOI: 10.1002/advs.202205680] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/29/2022] [Revised: 10/13/2022] [Indexed: 06/01/2023]
Abstract
Inducing new phases of transition metal dichalcogenides by controlling the d-electron-count has attracted much interest due to their novel structures and physicochemical properties. 1T'' ReSe2 is a promising candidate for sodium storage, but the low electronic conductivity and limited active sites hinder its electrochemical capacity. Herein, new-phase 1T' Re0.75 V0.25 Se2 crystals (P2/m) with zig-zag chains are successfully synthesized. The 1T''-1T' phase transition results from the electronic reorganization of 5d orbitals via electron extraction after V-atom doping. The electrical conductivity of 1T' Re0.75 V0.25 Se2 is 2.7 × 105 times higher than that of 1T'' ReSe2 . Moreover, density functional theory (DFT) calculations reveal that 1T' Re0.75 V0.25 Se2 has a larger interlayer spacing, lower bonding energy, and migration energy barrier for Na+ ions than 1T'' ReSe2 . As a result, 1T' Re0.75 V0.25 Se2 electrode shows an excellent rate capability of 203 mAh g-1 at 50 C with no capacity fading over 5000 cycles for sodium storage, which is superior to most reported sodium-ion anode materials. This 1T' Re0.75 V0.25 Se2 provides a new platform for various applications such as electronics, catalysis, and energy storage.
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Affiliation(s)
- Yuqiang Fang
- State Key Laboratory of High‐Performance Ceramics and Superfine MicrostructureShanghai Institute of Ceramics Chinese Academy of SciencesShanghai200050P. R. China
| | - Ximeng Lv
- Laboratory of Advanced MaterialsDepartment of Chemistry and Shanghai Key Laboratory of Molecular Catalysis and Innovative MaterialsFudan UniversityShanghai200438P. R. China
| | - Zhuoran Lv
- State Key Laboratory of High‐Performance Ceramics and Superfine MicrostructureShanghai Institute of Ceramics Chinese Academy of SciencesShanghai200050P. R. China
| | - Yang Wang
- State Key Laboratory of High‐Performance Ceramics and Superfine MicrostructureShanghai Institute of Ceramics Chinese Academy of SciencesShanghai200050P. R. China
| | - Gengfeng Zheng
- Laboratory of Advanced MaterialsDepartment of Chemistry and Shanghai Key Laboratory of Molecular Catalysis and Innovative MaterialsFudan UniversityShanghai200438P. R. China
| | - Fuqiang Huang
- State Key Laboratory of High‐Performance Ceramics and Superfine MicrostructureShanghai Institute of Ceramics Chinese Academy of SciencesShanghai200050P. R. China
- State Key Laboratory of Rare Earth Materials Chemistry and ApplicationsCollege of Chemistry and Molecular EngineeringPeking UniversityBeijing100871P. R. China
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21
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Sheng K, Yuan HK, Zhang B. Intrinsic spin, valley and piezoelectric polarizations in room-temperature ferrovalley Janus Ti XY ( XY = SCl and SeBr) monolayers. NANOSCALE 2022; 14:15156-15164. [PMID: 36214068 DOI: 10.1039/d2nr03860a] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/16/2023]
Abstract
Two-dimensional room-temperature Janus ferrovalley semiconductors with large spin, valley and piezoelectric polarizations provide fertile platforms for designing multifunctional nanodevices. Little research has been reported to date on such materials. Here, using first-principles calculations, we predict two dynamically stable Janus titanium chalcohalide (TiSCl and TiSeBr) monolayers, which are excellent piezoelectric ferrovalley semiconductors with in-plane magnetization and high magnetic transition temperatures (738 and 884 K). When an extrinsic magnetic field is used to force the magnetization along the out-of-plane direction, a large valley polarization (64 and 146 meV) can be generated in the highest valence band with a large spin-orbit coupling by the breaking of time-reversal and space-inversion symmetry, which can be further clarified by a two-band k·p model. This robust valley-contrasting physics characterized by the valley-dependent Berry curvature leads to the anomalous valley Hall effect. It can be observed by suitable hole doping or light irradiation under an in-plane electric field. Besides, we find that the missing mirror symmetry results in giant out-of-plane piezoelectric polarization (2.05 and 2.04 pm V-1). These outstanding properties give the Janus TiSCl and TiSeBr monolayers potential for a wide variety of applications in nanoelectronics, spintronics, valleytronics, piezoelectrics and other demanding areas.
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Affiliation(s)
- Kang Sheng
- School of Physical Science and Technology, Southwest University, Chongqing 400715, China.
| | - Hong-Kuan Yuan
- School of Physical Science and Technology, Southwest University, Chongqing 400715, China.
| | - Bokai Zhang
- School of Physical Science and Technology, Southwest University, Chongqing 400715, China.
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22
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Charge self-regulation in 1T'''-MoS 2 structure with rich S vacancies for enhanced hydrogen evolution activity. Nat Commun 2022; 13:5954. [PMID: 36216954 PMCID: PMC9550810 DOI: 10.1038/s41467-022-33636-8] [Citation(s) in RCA: 33] [Impact Index Per Article: 16.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 09/22/2021] [Accepted: 09/26/2022] [Indexed: 11/24/2022] Open
Abstract
Active electronic states in transition metal dichalcogenides are able to prompt hydrogen evolution by improving hydrogen absorption. However, the development of thermodynamically stable hexagonal 2H-MoS2 as hydrogen evolution catalyst is likely to be shadowed by its limited active electronic state. Herein, the charge self-regulation effect mediated by tuning Mo−Mo bonds and S vacancies is revealed in metastable trigonal MoS2 (1T'''-MoS2) structure, which is favarable for the generation of active electronic states to boost the hydrogen evolution reaction activity. The optimal 1T'''-MoS2 sample exhibits a low overpotential of 158 mV at 10 mA cm−2 and a Tafel slope of 74.5 mV dec−1 in acidic conditions, which are far exceeding the 2H-MoS2 counterpart (369 mV and 137 mV dec−1). Theoretical modeling indicates that the boosted performance is attributed to the formation of massive active electronic states induced by the charge self-regulation effect of Mo−Mo bonds in defective 1T'''-MoS2 with rich S vacancies. Metal chalcogenides have shown promising performances for renewable hydrogen evolution and such activities are sensitive to the material electronic structures. Here, authors modulate the electronic properties of molybdenum sulfide in 1T'''-MoS2 for hydrogen evolution electrocatalysis.
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23
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Wang R, Wang F, Zhang X, Feng X, Zhao C, Bu K, Zhang Z, Zhai T, Huang F. Improved Polarization in the Sr
6
Cd
2
Sb
6
O
7
Se
10
Oxyselenide through Design of Lateral Sublattices for Efficient Photoelectric Conversion. Angew Chem Int Ed Engl 2022; 61:e202206816. [DOI: 10.1002/anie.202206816] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 05/09/2022] [Indexed: 12/26/2022]
Affiliation(s)
- Ruiqi Wang
- Beijing National Laboratory for Molecular Sciences State Key Laboratory of Rare Earth Materials Chemistry and Applications College of Chemistry and Molecular Engineering Peking University Beijing 100871 P. R. China
| | - Fakun Wang
- State Key Laboratory of Materials Processing and Die & Mould Technology School of Materials Science and Engineering Huazhong University of Science and Technology (HUST) Wuhan 430074 P. R. China
| | - Xian Zhang
- Qian Xuesen Laboratory of Space Technology China Academy of Space Technology Beijing 100094 P. R. China
| | - Xin Feng
- State Key Laboratory of Materials Processing and Die & Mould Technology School of Materials Science and Engineering Huazhong University of Science and Technology (HUST) Wuhan 430074 P. R. China
| | - Chendong Zhao
- State Key Laboratory of High-Performance Ceramics and Superfine Microstructure Shanghai Institute of Ceramics Chinese Academy of Sciences Shanghai 200050 P. R. China
| | - Kejun Bu
- Center for High Pressure Science and Technology Advanced Research (HPSTAR) Shanghai 201203 P. R. China
| | - Zhuang Zhang
- State Key Laboratory of High-Performance Ceramics and Superfine Microstructure Shanghai Institute of Ceramics Chinese Academy of Sciences Shanghai 200050 P. R. China
| | - Tianyou Zhai
- State Key Laboratory of Materials Processing and Die & Mould Technology School of Materials Science and Engineering Huazhong University of Science and Technology (HUST) Wuhan 430074 P. R. China
| | - Fuqiang Huang
- Beijing National Laboratory for Molecular Sciences State Key Laboratory of Rare Earth Materials Chemistry and Applications College of Chemistry and Molecular Engineering Peking University Beijing 100871 P. R. China
- State Key Laboratory of High-Performance Ceramics and Superfine Microstructure Shanghai Institute of Ceramics Chinese Academy of Sciences Shanghai 200050 P. R. China
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24
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Gao Y, Wang S, Wang B, Jiang Z, Fang T. Recent Progress in Phase Regulation, Functionalization, and Biosensing Applications of Polyphase MoS 2. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2022; 18:e2202956. [PMID: 35908166 DOI: 10.1002/smll.202202956] [Citation(s) in RCA: 4] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/12/2022] [Revised: 06/28/2022] [Indexed: 06/15/2023]
Abstract
The disulfide compounds of molybdenum (MoS2 ) are layered van der Waals materials that exhibit a rich array of polymorphic structures. MoS2 can be roughly divided into semiconductive phase and metallic phase according to the difference in electron filling state of the 4d orbital of Mo atom. The two phases show completely different properties, leading to their diverse applications in biosensors. But to some extent, they compensate for each other. This review first introduces the relationship between phase state and the chemical/physical structures and properties of MoS2 . Furthermore, the synthetic methods are summarized and the preparation strategies for metastable phases are highlighted. In addition, examples of electronic and chemical property designs of MoS2 by means of doping and surface modification are outlined. Finally, studies on biosensors based on MoS2 in recent years are presented and classified, and the roles of MoS2 with different phases are highlighted. This review offers references for the selection of materials to construct different types of biosensors based on MoS2 , and provides inspiration for sensing performance enhancement.
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Affiliation(s)
- Yan Gao
- Shaanxi Key Laboratory of Energy Chemical Process Intensification, School of Chemical Engineering and Technology, Xi'an Jiaotong University, Xi'an, 710049, China
- Engineering Research Center of New Energy System Engineering and Equipment, University of Shaanxi Province, Xi'an, Shaanxi, 710049, China
| | - Siyao Wang
- Shaanxi Key Laboratory of Energy Chemical Process Intensification, School of Chemical Engineering and Technology, Xi'an Jiaotong University, Xi'an, 710049, China
- Engineering Research Center of New Energy System Engineering and Equipment, University of Shaanxi Province, Xi'an, Shaanxi, 710049, China
| | - Bin Wang
- Shaanxi Key Laboratory of Energy Chemical Process Intensification, School of Chemical Engineering and Technology, Xi'an Jiaotong University, Xi'an, 710049, China
- Engineering Research Center of New Energy System Engineering and Equipment, University of Shaanxi Province, Xi'an, Shaanxi, 710049, China
| | - Zhao Jiang
- Shaanxi Key Laboratory of Energy Chemical Process Intensification, School of Chemical Engineering and Technology, Xi'an Jiaotong University, Xi'an, 710049, China
- Engineering Research Center of New Energy System Engineering and Equipment, University of Shaanxi Province, Xi'an, Shaanxi, 710049, China
| | - Tao Fang
- Shaanxi Key Laboratory of Energy Chemical Process Intensification, School of Chemical Engineering and Technology, Xi'an Jiaotong University, Xi'an, 710049, China
- Engineering Research Center of New Energy System Engineering and Equipment, University of Shaanxi Province, Xi'an, Shaanxi, 710049, China
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25
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Hu X, Xu H, Liu Y, Lu L, Guo W, Han S, Luo J, Sun Z. Incorporating an Aromatic Cationic Spacer to Assemble 2D Polar Perovskite Crystals toward Self-Powered Detection of Quite Weak Polarized Light. J Phys Chem Lett 2022; 13:6017-6023. [PMID: 35748504 DOI: 10.1021/acs.jpclett.2c01435] [Citation(s) in RCA: 5] [Impact Index Per Article: 2.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
Two-dimensional (2D) hybrid perovskites with intrinsic attributes of structural and optical anisotropy are holding a bright promise for polarization-sensitive photodetection. However, studies on self-powered detection to quite weak polarized light remain scarce in this 2D family. By incorporating an aromatic spacer into the 3D cubic prototype, we have successfully assembled a new 2D hybrid perovskite with a polar motif, (FPEA)2(MA)Pb2I7 (FMPI, where FPEA is 4-fluorophenethylammonium and MA is methylammonium). Its unique 2D quantum-well structure allows optical absorption dichroism with a large ratio of ∼3.15, and the natural polarity results in a notable bulk photovoltaic effect. Further, centimeter-size crystals (10 × 10 × 3 mm3) of FMPI were facilely obtained by the temperature cooling method, and its crystal-based detectors enable excellent self-powered detection of quite weak polarized light, showing a notable polarization-sensitive ratio (∼1.5), extremely low detection limit (∼100 nW/cm2), and antifatigued stability. The alloyed aromatic cationic spacers facilitate the polarity and enhanced phase stability. This study paves a way for further exploration of new 2D perovskite candidates toward optoelectronic device applications.
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Affiliation(s)
- Xinxin Hu
- State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, Fujian 350002, China
- University of Chinese Academy of Sciences, Beijing 100049, China
| | - Haojie Xu
- State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, Fujian 350002, China
- University of Chinese Academy of Sciences, Beijing 100049, China
| | - Yi Liu
- State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, Fujian 350002, China
- University of Chinese Academy of Sciences, Beijing 100049, China
| | - Lei Lu
- State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, Fujian 350002, China
| | - Wuqian Guo
- State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, Fujian 350002, China
- University of Chinese Academy of Sciences, Beijing 100049, China
| | - Shiguo Han
- State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, Fujian 350002, China
| | - Junhua Luo
- State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, Fujian 350002, China
| | - Zhihua Sun
- State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, Fujian 350002, China
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26
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Wang R, Wang F, Zhang X, Feng X, Zhao C, Bu K, Zhang Z, Zhai T, Huang F. Improved Polarization in the Sr6Cd2Sb6O7Se10 Oxyselenide through Design of Lateral Sublattices for Efficient Photoelectric Conversion. Angew Chem Int Ed Engl 2022. [DOI: 10.1002/ange.202206816] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/06/2022]
Affiliation(s)
- Ruiqi Wang
- Peking University College of Chemistry and Molecular Engineering College of Chemistry CHINA
| | - Fakun Wang
- Huazhong University of Science and Technology State Key Laboratory of Materials Processing and Die & Mould Technology School of Materials Science and Engineering CHINA
| | - Xian Zhang
- China Academy of Space Technology Qian Xuesen Laboratory of Space Technology CHINA
| | - Xin Feng
- Huazhong University of Science and Technology State Key Laboratory of Materials Processing and Die & Mould Technology School of Materials Science and Engineering CHINA
| | - Chendong Zhao
- Shanghai Institute of Ceramics Chinese Academy of Sciences State Key Laboratory of High-Performance Ceramics and Superfine Microstructure CHINA
| | - Kejun Bu
- Center for High Pressure Science and Technology Advanced Research HPSTAR CHINA
| | - Zhuang Zhang
- Shanghai Institute of Ceramics Chinese Academy of Sciences State Key Laboratory of High-Performance Ceramics and Superfine Microstructure CHINA
| | - Tianyou Zhai
- Huazhong University of Science and Technology State Key Laboratory of Materials Processing and Die & Mould Technology School of Materials Science and Engineering CHINA
| | - Fuqiang Huang
- Shanghai Institute of Ceramics Chinese Academy of Sciences dingxi road, no. 1295 Shanghai CHINA
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27
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Wang P, Yang Y, Pan E, Liu F, Ajayan PM, Zhou J, Liu Z. Emerging Phases of Layered Metal Chalcogenides. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2022; 18:e2105215. [PMID: 34923740 DOI: 10.1002/smll.202105215] [Citation(s) in RCA: 4] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/29/2021] [Revised: 11/10/2021] [Indexed: 06/14/2023]
Abstract
Layered metal chalcogenides, as a "rich" family of 2D materials, have attracted increasing research interest due to the abundant choices of materials with diverse structures and rich electronic characteristics. Although the common metal chalcogenide phases such as 2H and 1T have been intensively studied, many other unusual phases are rarely explored, and some of these show fascinating behaviors including superconductivity, ferroelectrics, ferromagnetism, etc. From this perspective, the unusual phases of metal chalcogenides and their characteristics, as well as potential applications are introduced. First, the unusual phases of metal chalcogenides from different classes, including transition metal dichalcogenides, magnetic element-based chalcogenides, and metal phosphorus chalcogenides, are discussed, respectively. Meanwhile, their excellent properties of different unusual phases are introduced. Then, the methods for producing the unusual phases are discussed, specifically, the stabilization strategies during the chemical vapor deposition process for the unusual phase growth are discussed, followed by an outlook and discussions on how to prepare the unusual phase metal dichalcogenides in terms of synthetic methodology and potential applications.
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Affiliation(s)
- Ping Wang
- Key Lab of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), Beijing Key Lab of Nanophotonics, and Ultrafine Optoelectronic Systems, and School of Physics, School of Physics, Beijing Institute of Technology, Beijing, 100081, China
| | - Yang Yang
- Key Lab of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), Beijing Key Lab of Nanophotonics, and Ultrafine Optoelectronic Systems, and School of Physics, School of Physics, Beijing Institute of Technology, Beijing, 100081, China
| | - Er Pan
- School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu, 610054, China
- Yangtze Delta Region Institute (Huzhou), University of Electronic Science and Technology of China, Huzhou, 313099, China
| | - Fucai Liu
- School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu, 610054, China
- Yangtze Delta Region Institute (Huzhou), University of Electronic Science and Technology of China, Huzhou, 313099, China
| | - Pulickel M Ajayan
- Department of Materials Science and Nano Engineering, Rice University, Houston, TX, 77005, USA
| | - Jiadong Zhou
- Key Lab of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), Beijing Key Lab of Nanophotonics, and Ultrafine Optoelectronic Systems, and School of Physics, School of Physics, Beijing Institute of Technology, Beijing, 100081, China
| | - Zheng Liu
- School of Materials Science and Engineering, Nanyang Technological University, Singapore, 639798, Singapore
- School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore, 639798, Singapore
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28
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Wang G, Zhang G, Ke X, Chen X, Chen X, Wang Y, Huang G, Dong J, Chu S, Sui M. Direct Synthesis of Stable 1T-MoS 2 Doped with Ni Single Atoms for Water Splitting in Alkaline Media. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2022; 18:e2107238. [PMID: 35289481 DOI: 10.1002/smll.202107238] [Citation(s) in RCA: 23] [Impact Index Per Article: 11.5] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/23/2021] [Revised: 02/17/2022] [Indexed: 06/14/2023]
Abstract
Metallic MoS2 (i.e., 1T-MoS2 ) is considered as the most promising precious-metal-free electrocatalyst with outstanding hydrogen evolution reaction (HER) performance in acidic media comparable to Pt. However, sluggish kinematics of HER in alkaline media and its inability for the oxygen evolution reaction (OER), hamper its development as bifunctional catalysts. The instability of 1T-MoS2 further impedes its applications for scaling up, calling an urgent need for simple synthesis to produce stable 1T-MoS2 . In this work, the challenge of 1T-MoS2 synthesis is first addressed using a direct one-step hydrothermal method by adopting ascorbic acid. 1T-MoS2 with flower-like morphology is obtained, and transition metals (Ni, Co, Fe) are simultaneously doped into 1T-MoS2 . Ni-1T-MoS2 achieves an enhanced bifunctional catalytic activity for both HER and OER in alkaline media, where the key role of Ni doping as single atom is proved to be essential for boosting HER/OER activity. Finally, a Ni-1T-MoS2 ||Ni-1T-MoS2 electrolyzer is fabricated, reaching a current density of 10 mA cm-2 at an applied cell voltage of only 1.54 V for overall water splitting.
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Affiliation(s)
- Guowei Wang
- Beijing Key Laboratory of Microstructure and Properties of Solids, Faculty of Materials and Manufacturing, Beijing University of Technology, Beijing, 100124, China
| | - Guikai Zhang
- Beijing Synchrotron Radiation Facility, Institute of High Energy Physics, Chinese Academy of Sciences, Beijing, 100049, China
- University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Xiaoxing Ke
- Beijing Key Laboratory of Microstructure and Properties of Solids, Faculty of Materials and Manufacturing, Beijing University of Technology, Beijing, 100124, China
| | - Xiangyu Chen
- School of Chemistry, Beihang University, Beijing, 100191, China
| | - Xu Chen
- Beijing Key Laboratory of Microstructure and Properties of Solids, Faculty of Materials and Manufacturing, Beijing University of Technology, Beijing, 100124, China
| | - Yueshuai Wang
- Beijing Key Laboratory of Microstructure and Properties of Solids, Faculty of Materials and Manufacturing, Beijing University of Technology, Beijing, 100124, China
| | - Guoyu Huang
- Beijing Key Laboratory of Microstructure and Properties of Solids, Faculty of Materials and Manufacturing, Beijing University of Technology, Beijing, 100124, China
| | - Juncai Dong
- Beijing Synchrotron Radiation Facility, Institute of High Energy Physics, Chinese Academy of Sciences, Beijing, 100049, China
| | - Shengqi Chu
- Beijing Synchrotron Radiation Facility, Institute of High Energy Physics, Chinese Academy of Sciences, Beijing, 100049, China
| | - Manling Sui
- Beijing Key Laboratory of Microstructure and Properties of Solids, Faculty of Materials and Manufacturing, Beijing University of Technology, Beijing, 100124, China
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29
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Liu Z, Nie K, Qu X, Li X, Li B, Yuan Y, Chong S, Liu P, Li Y, Yin Z, Huang W. General Bottom-Up Colloidal Synthesis of Nano-Monolayer Transition-Metal Dichalcogenides with High 1T'-Phase Purity. J Am Chem Soc 2022; 144:4863-4873. [PMID: 35258958 DOI: 10.1021/jacs.1c12379] [Citation(s) in RCA: 34] [Impact Index Per Article: 17.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/17/2022]
Abstract
Phase engineering of nanomaterials provides a promising way to explore the phase-dependent physicochemical properties and various applications of nanomaterials. A general bottom-up synthesis method under mild conditions has always been challenging globally for the preparation of the semimetallic phase-transition-metal dichalcogenide (1T'-TMD) monolayers, which are pursued owing to their unique electrochemical property, unavailable in their semiconducting 2H phases. Here, we report the general scalable colloidal synthesis of nanosized 1T'-TMD monolayers, including 1T'-MoS2, 1T'-MoSe2, 1T'-WS2, and 1T'-WSe2, which are revealed to be of high phase purity. Moreover, the surfactant-reliant stacking-hinderable growth mechanism of 1T'-TMD nano-monolayers was unveiled through systematic experiments and theoretical calculations. As a proof-of-concept application, the 1T'-TMD nano-monolayers are used for electrocatalytic hydrogen production in an acidic medium. The 1T'-MoS2 nano-monolayers possess abundant in-plane electrocatalytic active sites and high conductivity, coupled with the contribution of the lattice strain, thus exhibiting excellent performance. Importantly, the catalyst shows impressive endurability in electroactivity. Our developed general scalable strategy could pave the way to extend the synthesis of other broad metastable semimetallic-phase TMDs, which offer great potential to explore novel crystal phase-dependent properties with wide application development for catalysis and beyond.
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Affiliation(s)
- Zhengqing Liu
- Frontiers Science Center for Flexible Electronics, Xi'an Institute of Flexible Electronics (IFE), Xi'an Institute of Biomedical Materials and Engineering, Northwestern Polytechnical University, Xi'an 710129, China
| | - Kunkun Nie
- Frontiers Science Center for Flexible Electronics, Xi'an Institute of Flexible Electronics (IFE), Xi'an Institute of Biomedical Materials and Engineering, Northwestern Polytechnical University, Xi'an 710129, China
| | - Xiaoyan Qu
- Frontier Institute of Science and Technology, State Key Laboratory for Manufacturing Systems Engineering, Xian Jiaotong University, Xian 710049, China
| | - Xinghua Li
- School of Physics, Northwest University, Xi'an 710127, China
| | - Binjie Li
- Frontiers Science Center for Flexible Electronics, Xi'an Institute of Flexible Electronics (IFE), Xi'an Institute of Biomedical Materials and Engineering, Northwestern Polytechnical University, Xi'an 710129, China
| | - Yanling Yuan
- Frontiers Science Center for Flexible Electronics, Xi'an Institute of Flexible Electronics (IFE), Xi'an Institute of Biomedical Materials and Engineering, Northwestern Polytechnical University, Xi'an 710129, China
| | - Shaokun Chong
- Frontiers Science Center for Flexible Electronics, Xi'an Institute of Flexible Electronics (IFE), Xi'an Institute of Biomedical Materials and Engineering, Northwestern Polytechnical University, Xi'an 710129, China
| | - Pei Liu
- School of Chemistry and Chemical Engineering, Northwestern Polytechnical University, Xi'an 710072, P. R. China
| | - Yunguo Li
- CAS Key Laboratory of Crust-Mantle Materials and Environments, School of Earth and Space Sciences, University of Science and Technology of China, Hefei, Anhui 230026, China.,CAS Center for Excellence in Comparative Planetology, USTC, Hefei, Anhui 230026, China
| | - Zongyou Yin
- Research School of Chemistry, The Australian National University, Canberra, Australian Capital Territory 2601, Australia
| | - Wei Huang
- Frontiers Science Center for Flexible Electronics, Xi'an Institute of Flexible Electronics (IFE), Xi'an Institute of Biomedical Materials and Engineering, Northwestern Polytechnical University, Xi'an 710129, China
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30
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Peng Q, Li D, Huang P, Ren Y, Li Z, Pi L, Chen P, Wu M, Zhang X, Zhou X, Zhai T. Room-Temperature Ferroelectricity in 2D Metal-Tellurium-Oxyhalide Cd 7Te 7Cl 8O 17 via Selenium-Induced Selective-Bonding Growth. ACS NANO 2021; 15:16525-16532. [PMID: 34559511 DOI: 10.1021/acsnano.1c06099] [Citation(s) in RCA: 5] [Impact Index Per Article: 1.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
Two-dimensional (2D) ferroelectric materials have attracted increasing interest due to meeting the requirements of integration, miniaturization, and multifunction of devices. However, the exploration of intrinsic 2D ferroelectric materials is still in the early stage, for which the related reports are still limited, especially fewer ones prepared by chemical vapor deposition (CVD). Here, the ultrathin metal-tellurium-oxyhalide Cd7Te7Cl8O17 (CTCO) flakes as thin as 3.8 nm are realized via the selenium-induced selective-bonding CVD method. The growth mechanism has been confirmed by experiments and theoretical calculations, which can be ascribed to the induction of selective bonding of a hydrogen atom in H2O molecules by the introduction of selenium, leading to the generation of strong oxidants. Excitingly, switchable out-of-plane ferroelectric polarization was observed in CTCO flakes down to 6 nm at room temperature, which may be caused by mobile Cl vacancies. This work has implications for the synthesis and applications of 2D ferroelectric materials.
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Affiliation(s)
- Qiaojun Peng
- State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Sciences and Engineering, Huazhong University of Science and Technology, Wuhan 430074, People's Republic of China
| | - Dongyan Li
- State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Sciences and Engineering, Huazhong University of Science and Technology, Wuhan 430074, People's Republic of China
| | - Pu Huang
- Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, People's Republic of China
| | - Yangyang Ren
- School of Physics, Wuhan National High Magnetic Field Center, Huazhong University of Science and Technology, Wuhan 430074, People's Republic of China
| | - Zexin Li
- State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Sciences and Engineering, Huazhong University of Science and Technology, Wuhan 430074, People's Republic of China
| | - Lejing Pi
- State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Sciences and Engineering, Huazhong University of Science and Technology, Wuhan 430074, People's Republic of China
| | - Ping Chen
- State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Sciences and Engineering, Huazhong University of Science and Technology, Wuhan 430074, People's Republic of China
| | - Menghao Wu
- School of Physics, Wuhan National High Magnetic Field Center, Huazhong University of Science and Technology, Wuhan 430074, People's Republic of China
| | - Xiuwen Zhang
- Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, People's Republic of China
| | - Xing Zhou
- State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Sciences and Engineering, Huazhong University of Science and Technology, Wuhan 430074, People's Republic of China
| | - Tianyou Zhai
- State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Sciences and Engineering, Huazhong University of Science and Technology, Wuhan 430074, People's Republic of China
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31
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Liu Y, Liu X, Xiong Z, Liu B, Xu J, Li L, Zhao S, Lin Z, Hong M, Luo J. 2D van der Waals Layered [C(NH 2) 3] 2SO 3S Exhibits Desirable UV Nonlinear-Optical Trade-Off. Inorg Chem 2021; 60:14544-14549. [PMID: 34549955 DOI: 10.1021/acs.inorgchem.1c02555] [Citation(s) in RCA: 13] [Impact Index Per Article: 4.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/29/2022]
Abstract
It remains a challenge to develop UV nonlinear optical (NLO) crystals that can achieve a desirable trade-off on UV absorption edge, second harmonic generation (SHG), and birefringence. Here we report a thiosulfate UV NLO crystal of a 2D van der Waals layered structure, [C(NH2)3]2SO3S. Remarkably, this thiosulfate realizes the desired trade-off, with a short absorption edge of 254 nm, a strong SHG response of approximately 2.8 times that of the benchmark KH2PO4, and a sufficient birefringence of 0.073 at the wavelength of 546 nm. In addition, it exhibits strong in-plane anisotropy of the SHG intensity. According to the first-principles calculations, the non-π-conjugated [SO3S]2- anion is the dominant SHG functional gene, while the π-conjugated [C(NH2)3]+ cation serves as the functional gene of birefringence. This is different from common UV NLO materials whose functionals of SHG and birefringence are the same. These findings indicate that combining different function genes may be an effective strategy to develop outstanding NLO materials with the desirable property trade-off.
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Affiliation(s)
- Youchao Liu
- State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, Fujian 350002, China
| | - Xiaomeng Liu
- Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Beijing 100190, China
| | - Zheyao Xiong
- State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, Fujian 350002, China.,University of the Chinese Academy of Sciences, Beijing 100049, China
| | - Binwen Liu
- State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, Fujian 350002, China
| | - Jinlong Xu
- National Laboratory of Solid State Microstructures, School of Electronic Science and Engineering, Nanjing University, Nanjing, Jiangsu 210093, P. R. China
| | - Lina Li
- State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, Fujian 350002, China.,Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou, Fujian 350108, P. R. China
| | - Sangen Zhao
- State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, Fujian 350002, China.,University of the Chinese Academy of Sciences, Beijing 100049, China.,Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou, Fujian 350108, P. R. China
| | - Zheshuai Lin
- Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Beijing 100190, China.,University of the Chinese Academy of Sciences, Beijing 100049, China
| | - Maochun Hong
- State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, Fujian 350002, China.,Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou, Fujian 350108, P. R. China
| | - Junhua Luo
- State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, Fujian 350002, China.,University of the Chinese Academy of Sciences, Beijing 100049, China.,Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou, Fujian 350108, P. R. China
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32
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Lin G, Ju Q, Guo X, Zhao W, Adimi S, Ye J, Bi Q, Wang J, Yang M, Huang F. Intrinsic Electron Localization of Metastable MoS 2 Boosts Electrocatalytic Nitrogen Reduction to Ammonia. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2021; 33:e2007509. [PMID: 34219276 DOI: 10.1002/adma.202007509] [Citation(s) in RCA: 12] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/03/2020] [Revised: 04/19/2021] [Indexed: 06/13/2023]
Abstract
The advancement of efficient electrocatalysts toward the nitrogen reduction reaction (NRR) is critical in sustainable ammonia synthesis under ambient pressure and temperature. Manipulating the electronic configuration of electrocatalysts is particularly vital to form metal-nitrogen (MN) bonds during the NRR through regulating the active electronic states of sites. Here, in sharp contrast to stable 2H MoS2 without metal chains, MoMo bonding in metastable polymorphs of MoS2 bulk (zigzag chain in the 1T' phase and diamond chain in the 1T″' phase) is discovered to significantly increase intrinsic electron localization around the metal chains. This can enhance the charge transfer from the adsorbed nitrogen molecule to the metal chains, allowing for boosted NRR kinetics. The electrochemical experiments show that the NH3 yield rate and the faradaic efficiency of the metastable 1T″' MoS2 rich with abundant Mo-Mo bonds are about 9 and 12 times above average than those of 2H MoS2 , correspondingly. Theoretical simulations reveal the high local electron density surrounding the MoMo chains and sites can promote π back-donation, which is beneficial for increasing nitrogen adsorption, strengthening the MN bonds, and reducing the cleavage barrier of the triple NN bond.
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Affiliation(s)
- Gaoxin Lin
- State Key Lab of High Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai, 201899, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Qiangjian Ju
- State Key Lab of High Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai, 201899, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Xiaowei Guo
- State Key Lab of High Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai, 201899, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Wei Zhao
- State Key Lab of High Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai, 201899, China
| | - Samira Adimi
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
- Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, 1219 Zhongguan West Road, Ningbo, 315201, China
| | - Jinyu Ye
- State Key Laboratory of Physical Chemistry of Solid Surfaces, Department of Chemistry, College of Chemistry and Chemical Engineering, Xiamen University, Xiamen, 361005, China
| | - Qingyuan Bi
- State Key Lab of High Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai, 201899, China
| | - Jiacheng Wang
- State Key Lab of High Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai, 201899, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Minghui Yang
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
- Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, 1219 Zhongguan West Road, Ningbo, 315201, China
| | - Fuqiang Huang
- State Key Lab of High Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai, 201899, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
- State Key Laboratory of Rare Earth Materials Chemistry and Applications, College of Chemistry and Molecular Engineering, Peking University, Beijing, 100871, China
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33
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Cao Y. Roadmap and Direction toward High-Performance MoS 2 Hydrogen Evolution Catalysts. ACS NANO 2021; 15:11014-11039. [PMID: 34251805 DOI: 10.1021/acsnano.1c01879] [Citation(s) in RCA: 60] [Impact Index Per Article: 20.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
MoS2 intrinsically show Pt-like hydrogen evolution reaction (HER) performance. Pristine MoS2 displayed low HER activity, which was caused by low quantities of catalytic sites and unsatisfactory conductivity. Then, phase engineering and S vacancy were developed as effective strategies to elevate the intrinsic HER performance. Heterojunctions and dopants were successful strategies to improve HER performance significantly. A couple of state-of-the-art MoS2 catalysts showed HER performance comparable to Pt. Applying multiple strategies in the same electrocatalyst was the key to furnish Pt-like HER performance. In this review, we summarize the available strategies to fabricate superior MoS2 HER catalysts and tag the important works. We analyze the well-defined strategies for fabricating a superior MoS2 electrocatalyst, propose complementary strategies which could help meet practical requirements, and help people design highly efficient MoS2 electrocatalysts. We also provide a brief perspective on assembling practical electrochemical systems by high-performance MoS2 electrocatalysts, apply MoS2 in other important electrocatalysis reactions, and develop high-performance two-dimensional (2D) dichalcogenide HER catalysts not limited to MoS2. This review will help researchers to obtain a better understanding of development of superior MoS2 HER electrocatalysts, providing directions for next-generation catalyst development.
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Affiliation(s)
- Yang Cao
- Department of Energy and Resources Engineering, College of Engineering, Peking University, Beijing, 100871 P. R. China
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34
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Lu L, Ma Y, Wang J, Liu Y, Han S, Liu X, Guo W, Xu H, Luo J, Sun Z. Two-Dimensional Guanidine-Based Hybrid Perovskites with Strong Dichroism for Multiwavelength Polarization-Sensitive Detection. Chemistry 2021; 27:9267-9271. [PMID: 33928680 DOI: 10.1002/chem.202100691] [Citation(s) in RCA: 4] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 02/24/2021] [Indexed: 11/06/2022]
Abstract
Two-dimensional (2D) organic-inorganic hybrid perovskites, benefiting from their natural anisotropy of quantum-well motifs and optical properties, have shown remarkable polarization-dependent responses superior to the 3D counterparts. Here, for the first time, multiwavelength polarization-sensitive detectors were fabricated by using single crystals of a guanidine-based 2D hybrid perovskite, (BA)2 (GA)Pb2 I7 (where BA+ is n-butylammonium and GA+ is guanidium). Its unique 2D quantum-well structure results in strong crystallographic-dependence of optical absorption. Strikingly, our crystal-based photodetector exhibits a prominent photocurrent dichroic ratio (Imax /Imin ) of ∼2.2 at 520 nm, higher than the typical 2D inorganic materials (GeSe, ∼1.09, PdSe2 , ∼1.8). In addition, notable dichroic ratios of 1.29 and 1.23 at 405 nm and 637 nm are also created for the multiwavelength polarized-light detection. The prominent detecting performances, including low dark current (1.6×10-11 A), considerable on/off ratio (∼2×103 ), high photodetectivity (∼3.3×1011 Jones) and responsivity (∼12.01 mA W-1 ), make (BA)2 (GA)Pb2 I7 a promising candidate for polarized-light detection. This work sheds light on the rational engineering of new 2D hybrid perovskites for the high-performance optoelectronic device applications.
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Affiliation(s)
- Lei Lu
- College of Chemical Engineering, Fuzhou University, Fuzhou, Fujian, 350116, P. R. China.,State Key Laboratory of Structure Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, Fujian, 350002, P. R. China
| | - Yu Ma
- State Key Laboratory of Structure Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, Fujian, 350002, P. R. China
| | - Jiaqi Wang
- State Key Laboratory of Structure Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, Fujian, 350002, P. R. China
| | - Yi Liu
- State Key Laboratory of Structure Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, Fujian, 350002, P. R. China
| | - Shiguo Han
- State Key Laboratory of Structure Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, Fujian, 350002, P. R. China
| | - Xitao Liu
- State Key Laboratory of Structure Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, Fujian, 350002, P. R. China
| | - Wuqian Guo
- State Key Laboratory of Structure Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, Fujian, 350002, P. R. China
| | - Haojie Xu
- State Key Laboratory of Structure Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, Fujian, 350002, P. R. China
| | - Junhua Luo
- State Key Laboratory of Structure Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, Fujian, 350002, P. R. China
| | - Zhihua Sun
- College of Chemical Engineering, Fuzhou University, Fuzhou, Fujian, 350116, P. R. China.,State Key Laboratory of Structure Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, Fujian, 350002, P. R. China.,Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou, Fujian, 350108, P. R. China
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35
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Zhou W, Yao WD, Zhang Q, Xue H, Guo SP. Introduction of Li into Ag-Based Noncentrosymmetric Sulfides for High-Performance Infrared Nonlinear Optical Materials. Inorg Chem 2021; 60:5198-5205. [DOI: 10.1021/acs.inorgchem.1c00205] [Citation(s) in RCA: 14] [Impact Index Per Article: 4.7] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/18/2022]
Affiliation(s)
- Wenfeng Zhou
- School of Chemistry and Chemical Engineering, Yangzhou University, Yangzhou, Jiangsu 225002, People’s Republic of China
| | - Wen-Dong Yao
- School of Chemistry and Chemical Engineering, Yangzhou University, Yangzhou, Jiangsu 225002, People’s Republic of China
| | - Qing Zhang
- School of Chemistry and Chemical Engineering, Yangzhou University, Yangzhou, Jiangsu 225002, People’s Republic of China
| | - Huaiguo Xue
- School of Chemistry and Chemical Engineering, Yangzhou University, Yangzhou, Jiangsu 225002, People’s Republic of China
| | - Sheng-Ping Guo
- School of Chemistry and Chemical Engineering, Yangzhou University, Yangzhou, Jiangsu 225002, People’s Republic of China
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36
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Schankler AM, Gao L, Rappe AM. Large Bulk Piezophotovoltaic Effect of Monolayer 2 H-MoS 2. J Phys Chem Lett 2021; 12:1244-1249. [PMID: 33497221 DOI: 10.1021/acs.jpclett.0c03503] [Citation(s) in RCA: 12] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
The bulk photovoltaic effect in noncentrosymmetric materials is an intriguing physical phenomenon that holds potential for high-efficiency energy harvesting. Here, we study the shift current bulk photovoltaic effect in the transition-metal dichalcogenide MoS2. We present a simple automated method to guide materials design and use it to uncover a distortion to monolayer 2H-MoS2 that dramatically enhances the integrated shift current. Using this distortion, we show that overlap in the Brillouin zone of the distributions of the shift vector (a quantity measuring the net displacement in real space of coherent wave packets during excitation) and the transition intensity is crucial for increasing the shift current. The distortion pattern is related to the material polarization and can be realized through an applied electric field via the converse piezoelectric effect. This finding suggests an additional method for engineering the shift current response of materials to augment previously reported methods using mechanical strain.
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Affiliation(s)
- Aaron M Schankler
- Department of Chemistry, University of Pennsylvania, Philadelphia, Pennsylvania 19104-6323, United States
| | - Lingyuan Gao
- Department of Chemistry, University of Pennsylvania, Philadelphia, Pennsylvania 19104-6323, United States
| | - Andrew M Rappe
- Department of Chemistry, University of Pennsylvania, Philadelphia, Pennsylvania 19104-6323, United States
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37
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Wang R, Han J, Yang B, Wang X, Zhang X, Song B. Defect Engineering in Metastable Phases of Transition-Metal Dichalcogenides for Electrochemical Applications. Chem Asian J 2020; 15:3961-3972. [PMID: 32865315 DOI: 10.1002/asia.202000883] [Citation(s) in RCA: 5] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 07/28/2020] [Revised: 08/28/2020] [Indexed: 11/10/2022]
Abstract
Metastable metallic phases of transition-metal dichalcogenide (TMD) nanomaterials have displayed excellent performance and emerged as promising candidates for sustainable energy sources low-cost storage and conversion because of their two-dimensional (2D) layered structures and extraordinary physicochemical properties. In order to broaden the range of potential applications, defect engineering is applied to the metastable phases of TMDs for further improvement of their catalytic and electronic properties. According to some recent studies, effective introduction of defects without perturbing the interior conductivity contributes to the development of metastable TMDs. This review provides deep insights into recent progress in electrochemistry using defect engineering in the metastable phases of TMDs. After introducing the structures of metastable phases and methods for defect construction, significant developments in catalysis and energy storage applications are discussed to elucidate structure-function relationships. Key challenges and future directions for defect engineering in the metastable phases of TMDs are also highlighted in the conclusions.
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Affiliation(s)
- Ran Wang
- National Key Laboratory of Science and Technology on Advanced Composites in Special Environments, Harbin Institute of Technology, Harbin, 150001, P. R. China
| | - Jiecai Han
- National Key Laboratory of Science and Technology on Advanced Composites in Special Environments, Harbin Institute of Technology, Harbin, 150001, P. R. China
| | - Bo Yang
- China Institute of Marine Technology and Economy, Beijing, 100081, P. R. China
| | - Xianjie Wang
- Department of Physics, Harbin Institute of Technology, Harbin, 150001, P. R. China
| | - Xinghong Zhang
- National Key Laboratory of Science and Technology on Advanced Composites in Special Environments, Harbin Institute of Technology, Harbin, 150001, P. R. China
| | - Bo Song
- National Key Laboratory of Science and Technology on Advanced Composites in Special Environments, Harbin Institute of Technology, Harbin, 150001, P. R. China
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38
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Guo Z, Hao X, Dong J, Li H, Gong Y, Yang D, Liao J, Chu S, Li Y, Li X, Chen D. Prediction of topological nontrivial semimetals and pressure-induced Lifshitz transition in 1T'-MoS 2 layered bulk polytypes. NANOSCALE 2020; 12:22710-22717. [PMID: 33169783 DOI: 10.1039/d0nr05208f] [Citation(s) in RCA: 6] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
Recently, bulk MoS2 crystals stacked by 1T'-MoS2 monolayers have been synthesized successfully, but little is known about their stacking sequences and topological properties. Based on first-principles calculations and symmetry-based indicator theory, we discovered that three predicted bulk structures of MoS2 (named 2M-, 1T'- and β-MoS2) stacked by 1T' monolayers are topological insulators and nodal line semimetals with and without spin-orbit coupling. Their stacking stability, electronic structure and the topology origin were systematically investigated. Further research proves that in the absence of SOC the open- and closed-type nodal lines can coexist in the momentum space of 2M-MoS2, which also possesses drumhead-like surface state. Moreover, we predicted a pressure-induced Lifshitz transition at about 1.3 GPa in 2M-MoS2. Our findings greatly enrich the topological phases of MoS2 and probably bring MoS2 to the rapidly growing family of layered topological semimetals.
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Affiliation(s)
- Zhiying Guo
- Beijing Synchrotron Radiation Facility, Institute of High Energy Physics, Chinese Academy of Sciences, Beijing 100049, China.
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Feng X, Sun Z, Pei K, Han W, Wang F, Luo P, Su J, Zuo N, Liu G, Li H, Zhai T. 2D Inorganic Bimolecular Crystals with Strong In-Plane Anisotropy for Second-Order Nonlinear Optics. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2020; 32:e2003146. [PMID: 32589323 DOI: 10.1002/adma.202003146] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/09/2020] [Revised: 06/03/2020] [Indexed: 05/07/2023]
Abstract
2D inorganic bimolecular crystals, consisting of two different inorganic molecules, are expected to possess novel physical and chemical properties due to the synergistic effect of the individual components. However, 2D inorganic bimolecular crystals remain unexploited because of the difficulties in preparation arising from non-typical layered structures and intricate intermolecular interactions. Here, the synthesis of 2D inorganic bimolecular crystal SbI3 ·3S8 nanobelts via a facile vertical microspacing sublimation strategy is reported. The as-synthesized SbI3 ·3S8 nanobelts exhibit strong in-plane anisotropy of phonon vibrations and intramolecular vibrations as well as show anisotropic light absorption with a high dichroism ratio of 3.9. Furthermore, it is revealed that the second harmonic generation intensity of SbI3 ·3S8 nanobelts is highly dependent on the excitation wavelength and crystallographic orientation. This work can inspire the growth of more 2D inorganic bimolecular crystals and excite potential applications for bimolecular optoelectronic devices.
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Affiliation(s)
- Xin Feng
- State Key Laboratory of Material Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology (HUST), Wuhan, 430074, P. R. China
| | - Zongdong Sun
- State Key Laboratory of Material Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology (HUST), Wuhan, 430074, P. R. China
| | - Ke Pei
- State Key Laboratory of Material Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology (HUST), Wuhan, 430074, P. R. China
| | - Wei Han
- State Key Laboratory of Material Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology (HUST), Wuhan, 430074, P. R. China
| | - Fakun Wang
- State Key Laboratory of Material Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology (HUST), Wuhan, 430074, P. R. China
| | - Peng Luo
- State Key Laboratory of Material Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology (HUST), Wuhan, 430074, P. R. China
| | - Jianwei Su
- State Key Laboratory of Material Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology (HUST), Wuhan, 430074, P. R. China
| | - Nian Zuo
- State Key Laboratory of Material Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology (HUST), Wuhan, 430074, P. R. China
| | - Guiheng Liu
- State Key Laboratory of Material Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology (HUST), Wuhan, 430074, P. R. China
| | - Huiqiao Li
- State Key Laboratory of Material Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology (HUST), Wuhan, 430074, P. R. China
| | - Tianyou Zhai
- State Key Laboratory of Material Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology (HUST), Wuhan, 430074, P. R. China
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Deng X, Li Z. Intrinsic ferromagnetic semiconductivity realized in a new MoS 2 monolayer. Phys Chem Chem Phys 2020; 22:13363-13367. [PMID: 32531005 DOI: 10.1039/c9cp05804d] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/31/2023]
Abstract
Magnetic semiconductors, with semiconductivity and ferromagnetism simultaneously, have promising important applications as storage devices. However, the ordered ferromagnetic state easily suffers from enhanced thermal fluctuation, inducing a very small Curie temperature. Here we have successfully predicted a new 2D small-gap MoS2 magnetic semiconductor. Instead, almost all of the reported MoS2 phase was nonmagnetic whether it exhibited semiconducting or metal behavior. Monte Carlo simulations showed that its Curie temperature could approach 130 K and could be further enhanced through applying biaxial tensile strain. The revealed atomic bonding pattern paves a new way to explore novel electronic and magnetic materials.
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Affiliation(s)
- Xiaohui Deng
- Hefei National Laboratory for Physical Sciences at the Microscale and Synergetic Innovation Center of Quantum Information & Quantum Physics, University of Science and Technology of China, Hefei, Anhui 230026, China.
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41
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Ahmed T, Bellare P, Debnath R, Roy A, Ravishankar N, Ghosh A. Thermal History-Dependent Current Relaxation in hBN/MoS 2 van der Waals Dimers. ACS NANO 2020; 14:5909-5916. [PMID: 32310636 DOI: 10.1021/acsnano.0c01079] [Citation(s) in RCA: 4] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
Combining atomically thin layers of van der Waals (vdW) materials in a chosen vertical sequence is an emerging route to create devices with desired functionalities. While this method aims to exploit the individual properties of partnering layers, strong interlayer coupling can significantly alter their electronic and optical properties. Here we explored the impact of the vdW epitaxy on electrical transport in atomically thin molybdenum disulfide (MoS2) when it forms a vdW dimer with crystalline films of hexagonal boron nitride (hBN). We observe a thermal history-dependent long-term (over ∼40 h) current relaxation in the overlap region of MoS2/hBN heterostructures, which is absent in bare MoS2 layers (or homoepitaxial MoS2/MoS2 dimers) on the same substrate. Concurrent relaxation in the low-frequency Raman modes in MoS2 in the heterostructure region suggests a slow structural relaxation between trigonal and octahedral polymorphs of MoS2 as a likely driving mechanism that also results in inhomogeneous charge distribution in the MoS2 layer. Our experiment yields an aspect of vdW heteroepitaxy that can be generic to electrical devices with atomically thin transition-metal dichalcogenides.
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Affiliation(s)
- Tanweer Ahmed
- Department of Physics, Indian Institute of Science, Bangalore 560012, India
| | - Pavithra Bellare
- Materials Research Centre, Indian Institute of Science, Bangalore 560012, India
| | - Rahul Debnath
- Department of Physics, Indian Institute of Science, Bangalore 560012, India
| | - Ahin Roy
- Materials Research Centre, Indian Institute of Science, Bangalore 560012, India
| | | | - Arindam Ghosh
- Department of Physics, Indian Institute of Science, Bangalore 560012, India
- Centre for Nano Science and Engineering, Indian Institute of Science, Bangalore 560012, India
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42
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Sokolikova MS, Mattevi C. Direct synthesis of metastable phases of 2D transition metal dichalcogenides. Chem Soc Rev 2020; 49:3952-3980. [PMID: 32452481 DOI: 10.1039/d0cs00143k] [Citation(s) in RCA: 70] [Impact Index Per Article: 17.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
The different polymorphic phases of transition metal dichalcogenides (TMDs) have attracted enormous interest in the last decade. The metastable metallic and small band gap phases of group VI TMDs displayed leading performance for electrocatalytic hydrogen evolution, high volumetric capacitance and some of them exhibit large gap quantum spin Hall (QSH) insulating behaviour. Metastable 1T(1T') phases require higher formation energy, as compared to the thermodynamically stable 2H phase, thus in standard chemical vapour deposition and vapour transport processes the materials normally grow in the 2H phases. Only destabilization of their 2H phase via external means, such as charge transfer or high electric field, allows the conversion of the crystal structure into the 1T(1T') phase. Bottom-up synthesis of materials in the 1T(1T') phases in measurable quantities would broaden their prospective applications and practical utilization. There is an emerging evidence that some of these 1T(1T') phases can be directly synthesized via bottom-up vapour- and liquid-phase methods. This review will provide an overview of the synthesis strategies which have been designed to achieve the crystal phase control in TMDs, and the chemical mechanisms that can drive the synthesis of metastable phases. We will provide a critical comparison between growth pathways in vapour- and liquid-phase synthesis techniques. Morphological and chemical characteristics of synthesized materials will be described along with their ability to act as electrocatalysts for the hydrogen evolution reaction from water. Phase stability and reversibility will be discussed and new potential applications will be introduced. This review aims at providing insights into the fundamental understanding of the favourable synthetic conditions for the stabilization of metastable TMD crystals and at stimulating future advancements in the field of large-scale synthesis of materials with crystal phase control.
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Zhou Y, Zhang J, Song E, Lin J, Zhou J, Suenaga K, Zhou W, Liu Z, Liu J, Lou J, Fan HJ. Enhanced performance of in-plane transition metal dichalcogenides monolayers by configuring local atomic structures. Nat Commun 2020; 11:2253. [PMID: 32382108 PMCID: PMC7205865 DOI: 10.1038/s41467-020-16111-0] [Citation(s) in RCA: 50] [Impact Index Per Article: 12.5] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/05/2019] [Accepted: 04/15/2020] [Indexed: 11/26/2022] Open
Abstract
The intrinsic activity of in-plane chalcogen atoms plays a significant role in the catalytic performance of transition metal dichalcogenides (TMDs). A rational modulation of the local configurations is essential to activating the in-plane chalcogen atoms but restricted by the high energy barrier to break the in-plane TM-X (X = chalcogen) bonds. Here, we theoretically design and experimentally realize the tuning of local configurations. The electron transfer capacity of local configurations is used to screen suitable TMDs materials for hydrogen evolution reaction (HER). Among various configurations, the triangular-shape cobalt atom cluster with a central sulfur vacancy (3CoMo-VS) renders the distinct electrocatalytic performance of MoS2 with much reduced overpotential and Tafel slope. The present study sheds light on deeper understanding of atomic-scale local configuration in TMDs and a methodology to boost the intrinsic activity of chalcogen atoms.
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Affiliation(s)
- Yao Zhou
- School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore, 637371, Singapore
| | - Jing Zhang
- Department of Materials Science and Nano Engineering, Rice University, Houston, TX, 77005, USA
| | - Erhong Song
- Shanghai Institute of Ceramics, Chinese Academy of Sciences, 200050, Shanghai, China
| | - Junhao Lin
- Shenzhen Key Laboratory of Advanced Quantum Functional Materials and Devices, Department of Physics, Southern University of Science and Technology, 518055, Shenzhen, China
| | - Jiadong Zhou
- School of Materials Science and Engineering, Nanyang Technological University, Singapore, 639798, Singapore
| | - Kazu Suenaga
- National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, 305-8565, Japan
| | - Wu Zhou
- School of Physical Sciences and CAS Key Laboratory of Vacuum Sciences, University of Chinese Academy of Sciences, 100049, Beijing, China
| | - Zheng Liu
- School of Materials Science and Engineering, Nanyang Technological University, Singapore, 639798, Singapore
| | - Jianjun Liu
- Shanghai Institute of Ceramics, Chinese Academy of Sciences, 200050, Shanghai, China.
| | - Jun Lou
- Department of Materials Science and Nano Engineering, Rice University, Houston, TX, 77005, USA.
| | - Hong Jin Fan
- School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore, 637371, Singapore.
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Qian Z, Jiao L, Xie L. Phase Engineering of
Two‐Dimensional
Transition Metal Dichalcogenides. CHINESE J CHEM 2020. [DOI: 10.1002/cjoc.202000064] [Citation(s) in RCA: 27] [Impact Index Per Article: 6.8] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/06/2022]
Affiliation(s)
- Ziyue Qian
- CAS Key Laboratory of Standardization and Measurement for Nanotechnology, CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology Beijing 100190 China
- Key Laboratory of Organic Optoelectronics and Molecular Engineering of the Ministry of Education, Department of Chemistry, Tsinghua University Beijing 100084 China
- University of Chinese Academy of Sciences Beijing 100049 China
| | - Liying Jiao
- Key Laboratory of Organic Optoelectronics and Molecular Engineering of the Ministry of Education, Department of Chemistry, Tsinghua University Beijing 100084 China
| | - Liming Xie
- CAS Key Laboratory of Standardization and Measurement for Nanotechnology, CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology Beijing 100190 China
- University of Chinese Academy of Sciences Beijing 100049 China
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45
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Yang T, Li Y, Han S, Xu Z, Liu Y, Zhang X, Liu X, Teng B, Luo J, Sun Z. Highly-Anisotropic Dion-Jacobson Hybrid Perovskite by Tailoring Diamine into CsPbBr 3 for Polarization-Sensitive Photodetection. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2020; 16:e1907020. [PMID: 32162790 DOI: 10.1002/smll.201907020] [Citation(s) in RCA: 20] [Impact Index Per Article: 5.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/02/2019] [Revised: 02/16/2020] [Accepted: 02/18/2020] [Indexed: 06/10/2023]
Abstract
2D materials with inherent attributes of structural anisotropy have been well applied in the field of polarization-sensitive photodetection. However, to explore new 2D members with strong polarized-light responses still remains a challenge. Herein, by alloying diamine molecule into the 3D prototype of CsPbBr3 , a new Dion-Jacobson (DJ) type 2D perovskite of (HDA)CsPb2 Br7 (1, where HDA2+ is 1,6-hexamethylenediammonium), containing both inorganic Cs metal and organic cations is designed. The natural anisotropy characteristics of 1 are solidly elucidated by analyzing crystal structure, electric conductivity, and optical properties. Strikingly, distinct polarization-sensitive responses are observed in 1, owing to its strong anisotropy of optical absorption (the ratio of αc /αb ≈ 2.2). Consequently, crystal-based detectors of 1 exhibit fascinating photo-activities to polarized-light, including high detectivity (1.5 × 109 Jones), large dichroism ratio (Iph c /Iph b ≈ 1.6) and fast responding rate (200 µs). All these polarization-sensitive performances along with intriguing phase stability make 1 a potential candidate for polarized-light detection. This work paves a pathway toward new functionalities of DJ-type 2D hybrid perovskites for their future optoelectronic device applications.
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Affiliation(s)
- Tao Yang
- State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences Fuzhou, Fujian, 350002, P. R. China
- College of Physics, Qingdao University, Qingdao, 266071, P. R. China
| | - Yaobin Li
- State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences Fuzhou, Fujian, 350002, P. R. China
| | - Shiguo Han
- State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences Fuzhou, Fujian, 350002, P. R. China
| | - Zhiyun Xu
- State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences Fuzhou, Fujian, 350002, P. R. China
| | - Yi Liu
- State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences Fuzhou, Fujian, 350002, P. R. China
| | - Xinyuan Zhang
- State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences Fuzhou, Fujian, 350002, P. R. China
| | - Xitao Liu
- State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences Fuzhou, Fujian, 350002, P. R. China
| | - Bing Teng
- College of Physics, Qingdao University, Qingdao, 266071, P. R. China
| | - Junhua Luo
- State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences Fuzhou, Fujian, 350002, P. R. China
| | - Zhihua Sun
- State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences Fuzhou, Fujian, 350002, P. R. China
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46
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Zhang K, Ding C, She Y, Wu Z, Zhao C, Pan B, Zhang L, Zhou W, Fan Q. CuFe 2O 4/MoS 2 Mixed-Dimensional Heterostructures with Improved Gas Sensing Response. NANOSCALE RESEARCH LETTERS 2020; 15:32. [PMID: 32016642 PMCID: PMC6997305 DOI: 10.1186/s11671-020-3268-4] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/16/2019] [Accepted: 01/27/2020] [Indexed: 06/05/2023]
Abstract
Mixed-dimensional (2D + nD, n = 0, 1, and 3) heterostructures opened up a new avenue for fundamental physics studies and applied nanodevice designs. Herein, a novel type-II staggered band alignment CuFe2O4/MoS2 mixed-dimensional heterostructures (MHs) that present a distinct enhanced (20-28%) acetone gas sensing response compared with pure CuFe2O4 nanotubes are reported. Based on the structural characterizations and DFT calculation results, the tentative mechanism for the improvement of gas sensing performance of the CuFe2O4/MoS2 MHs can be attributed to the synergic effect of type-II band alignment and the MoS2 active sites.
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Affiliation(s)
- Kenan Zhang
- School of Science, Key Laboratory of High Performance Scientific Computation, Xihua University, Chengdu, 610039 China
| | - Changchun Ding
- School of Science, Key Laboratory of High Performance Scientific Computation, Xihua University, Chengdu, 610039 China
| | - Yihong She
- School of Science, Key Laboratory of High Performance Scientific Computation, Xihua University, Chengdu, 610039 China
| | - Zhen Wu
- School of Science, Key Laboratory of High Performance Scientific Computation, Xihua University, Chengdu, 610039 China
| | - Changhui Zhao
- School of Microelectronics, Southern University of Science and Technology, Shenzhen, 518055 China
| | - Baojun Pan
- Zhejiang Key Laboratory of Carbon Materials, College of Chemistry and Materials Engineering, Wenzhou University, Wenzhou, 325035 China
| | - Lijie Zhang
- Zhejiang Key Laboratory of Carbon Materials, College of Chemistry and Materials Engineering, Wenzhou University, Wenzhou, 325035 China
| | - Wei Zhou
- National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, 200083 China
| | - Qunchao Fan
- School of Science, Key Laboratory of High Performance Scientific Computation, Xihua University, Chengdu, 610039 China
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47
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Choi JH, Jhi SH. Origin of robust out-of-plane ferroelectricity in d1T-MoS 2 monolayer. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2020; 32:045702. [PMID: 31597126 DOI: 10.1088/1361-648x/ab4c67] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
The d1T-MoS2, distorted-1T group-VIB transition metal dichalcogenides monolayer, is considered as promising atomically thin out-of-plane ferroelectric materials. We study the origin of the ferroelectricity in d1T-MoS2 monolayer using first-principles calculations and the Landau theory of phase transition. In contrast to conventional improper ferroelectrics, we find that the polarization has dependence on both primary and secondary modes. It turns out that the charge imbalance between chalcogen atoms at different symmetry sites is the source for the out-of-plane polarization without any out-of-plane displacement in the primary mode. The secondary mode following the primary mode cancels partially the polarization and secures it against the depolarization field. We show that the polarization of d1T-MoS2 is robust to external electric fields and can be manipulated by the uniaxial strain.
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Affiliation(s)
- Ji-Hae Choi
- Department of Physics, Pohang University of Science and Technology, Pohang 37673, Republic of Korea
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48
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Gan F, Dong N, Liu Z, Jia H, Wang J, Chen Y. Organic Small Molecule Covalently Functionalized Molybdenum Disulfide Hybrid Material for Optical Limiting. BULLETIN OF THE CHEMICAL SOCIETY OF JAPAN 2020. [DOI: 10.1246/bcsj.20190235] [Citation(s) in RCA: 4] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 01/09/2023]
Affiliation(s)
- Fan Gan
- Key Laboratory for Advanced Materials, Institute of Applied Chemistry, East China University of Science and Technology, 130 Meilong Road, Shanghai 200237, P. R. China
| | - Ningning Dong
- Laboratory of Micro-Nano Optoelectronic Materials and Devices, Key Laboratory of Materials for High-Power Laser, Shanghai Institute of Optics and Fine Mechanics, CAS, Shanghai 201800, P. R. China
- State Key Laboratory of High Field Laser Physics, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800, P. R. China
| | - Zhiwei Liu
- Key Laboratory for Advanced Materials, Institute of Applied Chemistry, East China University of Science and Technology, 130 Meilong Road, Shanghai 200237, P. R. China
| | - Huimei Jia
- Key Laboratory for Advanced Materials, Institute of Applied Chemistry, East China University of Science and Technology, 130 Meilong Road, Shanghai 200237, P. R. China
| | - Jun Wang
- Laboratory of Micro-Nano Optoelectronic Materials and Devices, Key Laboratory of Materials for High-Power Laser, Shanghai Institute of Optics and Fine Mechanics, CAS, Shanghai 201800, P. R. China
- State Key Laboratory of High Field Laser Physics, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800, P. R. China
| | - Yu Chen
- Key Laboratory for Advanced Materials, Institute of Applied Chemistry, East China University of Science and Technology, 130 Meilong Road, Shanghai 200237, P. R. China
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50
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Mao Y, Fang Y, Wang D, Bu K, Wang S, Zhao W, Huang F. Crystal structure and electrical resistance property of Rb 0.21(H 2O) y WS 2. Acta Crystallogr E Crystallogr Commun 2019; 75:976-979. [PMID: 31392007 PMCID: PMC6659325 DOI: 10.1107/s2056989019007941] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/29/2019] [Accepted: 06/03/2019] [Indexed: 10/14/2023]
Abstract
Rb0.21(H2O) y WS2, rubidium hydrate di-thio-tungstate, is a new quasi two-dimensional sulfide. Its crystal structure consists of ordered WS2 layers, separated by disordered Rb+ ions and water mol-ecules. All atomic sites are located on mirror planes. The WS2 layers are composed of edge-sharing [WS6] octa-hedra and extend parallel to (001). The presence of structural water was revealed by thermogravimetry, but the position and exact amount could not be determined in the present study. The temperature dependence of the electrical resistance indicates that Rb0.21(H2O) y WS2 is semiconducting between 80-300 K.
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Affiliation(s)
- Yuanlv Mao
- State Key Laboratory of High Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050, People’s Republic of China
| | - Yuqiang Fang
- State Key Laboratory of High Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050, People’s Republic of China
| | - Dong Wang
- State Key Laboratory of High Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050, People’s Republic of China
| | - Kejun Bu
- State Key Laboratory of High Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050, People’s Republic of China
| | - Sishun Wang
- School of Physical Science and Technology, ShanghaiTech University, Shanghai 201210, People’s Republic of China
| | - Wei Zhao
- State Key Laboratory of High Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050, People’s Republic of China
| | - Fuqiang Huang
- State Key Laboratory of High Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050, People’s Republic of China
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