All-Scale Hierarchically Structured p-Type PbSe Alloys with High Thermoelectric Performance Enabled by Improved Band Degeneracy

Unraveling electronic origins for boosting thermoelectric performance of p-type (Bi,Sb)2Te3

P-type Bi2-xSbxTe3 compounds are crucial for thermoelectric applications at room temperature, with Bi0.5Sb1.5Te3 demonstrating superior performance, attributed to its maximum density-of-states effective mass (m*). However, the underlying electronic origin remains obscure, impeding further performance optimization. Herein, we synthesized high-quality Bi2-xSbxTe3 (00 l) films and performed comprehensive angle-resolved photoemission spectroscopy (ARPES) measurements and band structure calculations to shed light on the electronic structures. ARPES results directly evidenced that the band convergence along the [Formula: see text]-[Formula: see text] direction contributes to the maximum m* of Bi0.5Sb1.5Te3. Moreover, strategic manipulation of intrinsic defects optimized the hole density of Bi0.5Sb1.5Te3, allowing the extra valence band along [Formula: see text]-[Formula: see text] to contribute to the electrical transport. The synergy of the above two aspects documented the electronic origins of the Bi0.5Sb1.5Te3's superior performance that resulted in an extraordinary power factor of ~5.5 milliwatts per meter per square kelvin. The study offers valuable guidance for further performance optimization of p-type Bi2-xSbxTe3.

Achieving High Isotropic Figure of Merit in Cd and in Codoped Polycrystalline SnSe

Here, we combined Cd and In codoping with a simple hydrothermal synthesis method to prepare SnSe powders composed of nanorod-like flowers. After spark plasma sintering, its internal grains inherited well the morphological features of the precursor, and the multiscale microstructure included nanorod-shaped grains, high-density dislocations, and stacking faults, as well as abundant nanoprecipitates, resulting in an ultralow thermal conductivity of 0.15 W m-1 K-1 for the synthesized material. At the same time, Cd and In synergistically regulated the electrical conductivity and Seebeck coefficient of SnSe, leading to an enhanced power factor. Among them, Sn0.94Cd0.03In0.03Se achieved a peak ZT of 1.50 parallel to the pressing direction, representing an 87.5% improvement compared with pure SnSe. Notably, the material possesses isotropic ZT values parallel and perpendicular to the pressing direction, overcoming the characteristic anisotropy in thermal performance observed in previous polycrystalline SnSe-based materials. Our results provide a new strategy for optimizing the performance of thermoelectric materials through structural engineering.

Lattice Plainification Leads to High Thermoelectric Performance of P-Type PbSe Crystals

Thermoelectrics has applications in power generation and refrigeration. Since only commercial Bi2 Te3 has a low abundance Te, PbSe gets attention. This work enhances the near-room temperature performance of p-type PbSe through enhancing carrier mobility via lattice plainification. Composition controlled and Cu-doped p-type PbSe crystals are grown through physical vapor deposition. Results exhibit an enhanced carrier mobility ≈2578 cm2  V-1  s-1 for Pb0.996 Cu0.0004 Se. Microstructure characterization and density functional theory calculations verify the introduced Cu atoms filled Pb vacancies, realizing lattice plainification and enhancing the carrier mobility. The Pb0.996 Cu0.0004 Se sample achieves a power factor ≈42 µW cm-1  K-2 and a ZT ≈ 0.7 at 300 K. The average ZT of it reaches ≈0.9 (300-573 K), resulting in a single-leg power generation efficiency of 7.1% at temperature difference of 270 K, comparable to that of p-type commercial Bi2 Te3 . A 7-pairs device paired the p-type Pb0.996 Cu0.0004 Se with the n-type commercial Bi2 Te3 shows a maximum cooling temperature difference ≈42 K with the hot side at 300 K, ≈65% of that of the commercial Bi2 Te3 device. This work highlights the potential of p-type PbSe for power generation and refrigeration near room temperature and hope to inspire researchers on replacing commercial Bi2 Te3 .

Enhancement in Thermoelectric Performance in Ti-doped Yb0.4Co4Sb12 Skutterudites via Carrier Optimization and Phonon Anharmonicity

Yb0.4Co4Sb12, being a well-studied system, has shown notably high thermoelectric performance due to the Yb filler atom-driven large concentration of charge carriers and lower value of thermal conductivity. In this work, the thermoelectric performance of YbzCo4-xTixSb12 (where z = 0, x = 0 and z = 0.4, x = 0, 0.04, and 0.08) upon Ti doping prepared by the melt-quenched-annealing followed by spark plasma sintering (SPS) has been studied in the temperature range of 300-700 K. Addition of Yb and doping of donor Ti at the Co site simultaneously increase the electrical conductivity to 1453.5 S/cm at 300 K, which ultimately boosts the power factor as high as ∼4.3 mW/(m·K2) at 675 K in Yb0.4Co3.96Ti0.04Sb12. Adversely, a significant reduction in thermal conductivity is obtained from ∼7.69 W/(m·K) (Co4Sb12) to ∼3.50 W/(m·K) (Yb0.4Co3.96Ti0.04Sb12) at ∼300 K. As a result, the maximum zT is achieved as ∼0.85 at 623 K with high hardness of 584 HV for the composition of Yb0.4Co3.96Ti0.04Sb12, which demonstrates it to be an efficient material suitable for intermediate temperature thermoelectric applications.

Mechanical Compatibility between Mg3(Sb,Bi)2 and MgAgSb in Thermoelectric Modules

Thermoelectric (TE) modules are exposed to temperature gradients and repeated thermal cycles during their operation; therefore, mechanically robust n- and p-type legs are required to ensure their structural integrity. The difference in the coefficients of thermal expansion (CTEs) of the two legs of a TE module can cause stress buildup and the deterioration of performance with frequent thermal cycles. Recently, n-type Mg₃Sb₂ and p-type MgAgSb have become two promising components of low-temperature TE modules because of to their high TE performance, nontoxicity, and abundance. However, the CTEs of n-Mg₃Sb₂ and p-MgAgSb differ by approximately 10%. Furthermore, the oxidation resistances of these materials at increased temperatures are unclear. This work manipulates the thermal expansion of Mg₃Sb₂ by alloying it with Mg₃Bi₂. The addition of Bi to Mg₃Sb₂ reduces the coefficient of linear thermal expansion from 22.6 × 10^-6 to 21.2 × 10^-6 K^-1 for Mg₃Sb_1.5Bi_0.5, which is in excellent agreement with that of MgAgSb (21 × 10^-6 K^-1). Furthermore, thermogravimetric data indicate that both Mg₃Sb_1.5Bi_0.5 and MgAgSb are stable in air and Ar at temperatures below ∼570 K. The results suggest the compatibility and robustness of Mg₃Sb_1.5Bi_0.5 and MgAgSb as a pair of thermoelectric legs for low-temperature TE modules.

Enhanced Thermoelectric Performance and Low Thermal Conductivity in Cu2GeTe3 with Identified Localized Symmetry Breakdown

Highly efficient and eco-friendly thermoelectric generators rely on low-cost and nontoxic semiconductors with high symmetry and ultralow lattice thermal conductivity κ_L. We report the rational synthesis of the novel cubic (Ag, Se)-doped Cu₂GeTe₃ semiconductors. A localized symmetry breakdown (LSB) was found in the composition of Cu_1.9Ag_0.1GeTe_1.5Se_1.5 (i.e., CAGTS15) with an ultralow κ_L of 0.37 W/mK at 723 K, the lowest value outperforming all Cu₂GeCh₃ (Ch = S, Se, and Te). A joint investigation of synchrotron X-ray techniques identifies the LSB embedded into the cubic CAGTS15 host matrix. This LSB is an Ångström-scale orthorhombic symmetry unit, characteristic of multiple bond lengths, large anisotropic atomic displacements, and distinct local chemical coordination of anions. Computational results highlight that such an unusual orthorhombic symmetry demonstrates low-frequency phonon modes, which become softer and more predominant with increasing temperatures. This unconventional LSB promotes bond complexity and phonon scattering, highly beneficial for extraordinarily low lattice thermal conductivity.

Preparation of Heavily Doped P-Type PbSe with High Thermoelectric Performance by the NaCl Salt-Assisted Approach

Thermoelectric (TE) technology, which can convert scrap heat into electricity, has attracted considerable attention. However, broader applications of TE are hindered by lacking high-performance thermoelectric materials, which can be effectively progressed by regulating the carrier concentration. In this work, a series of PbSe(NaCl)x (x = 3, 3.5, 4, 4.5) samples were synthesized through the NaCl salt-assisted approach with Na+ and Cl− doped into their lattice. Both theoretical and experimental results demonstrate that manipulating the carrier concentration by adjusting the content of NaCl is conducive to upgrading the electrical transport properties of the materials. The carrier concentration elevated from 2.71 × 1019 cm−3 to 4.16 × 1019 cm−3, and the materials demonstrated a maximum power factor of 2.9 × 10−3 W m−1 K−2. Combined with an ultralow lattice thermal conductivity of 0.7 W m−1 K−1, a high thermoelectric figure of merit (ZT) with 1.26 at 690 K was attained in PbSe(NaCl)4.5. This study provides a guideline for chemical doping to improve the thermoelectric properties of PbSe further and promote its applications.

Enhanced Thermoelectric Performance of n-Type PbTe via Carrier Concentration Optimization over a Broad Temperature Range

The optimal carrier concentration of thermoelectric materials increases with increasing temperature. However, conventional aliovalent doping usually provides an approximately constant carrier concentration over the whole temperature range, which can only match the optimal carrier concentration in a narrow temperature range. In this work, n-type indium and aluminum codoped PbTe were prepared with high-pressure synthesis, followed by spark plasma sintering. While Al doping can provide a roughly constant carrier concentration with varying temperatures, In doping can trap electrons at low temperatures and release them at high temperatures, thus optimizing the carrier concentration over a broad temperature range. As a result, both electrical transport properties and thermal conductivity are optimized, and a significantly enhanced thermoelectric performance is achieved in InxAl0.02Pb0.98Te. The optimal In0.008Al0.02Pb0.98Te shows a peak ZT of 1.3 and an average ZT of 1, with a decent conversion efficiency of 14%. Current work demonstrates that optimizing carrier concentration with varying temperatures is effective to enhance the thermoelectric performance of n-type PbTe.

High-Performance Skutterudite/Half-Heusler Cascaded Thermoelectric Module Using the Transient Liquid Phase Sintering Joining Technique

Thermoelectric (TE) materials have made rapid advancement in the past decade, paving the pathway toward the design of solid-state waste heat recovery systems. The next requirement in the design process is realization of full-scale multistage TE devices in the medium to high temperature range for enhanced power generation. Here, we report the design and manufacturing of full-scale skutterudite (SKD)/half-Heusler (hH) cascaded TE devices with 49-couple TE legs for each stage. The automated pick-and-place tool is employed for module fabrication providing overall high manufacturing process efficiency and repeatability. Optimized Ti/Ni/Au coating layers are developed for metallization as the diffusion barrier and electrode contact layers. The Cu-Sn transient liquid phase sintering technique is utilized for SKD and hH stages, which provides a high strength bonding and very low contact resistance. A remarkably high output power of 38.3 W with a device power density of 2.8 W·cm^-2 at a temperature gradient of 513 °C is achieved. These results provide an avenue for widespread utilization of TE technology in waste heat recovery applications.

Atomic Level Defect Structure Engineering for Unusually High Average Thermoelectric Figure of Merit in n-Type PbSe Rivalling PbTe

Realizing high average thermoelectric figure of merit (ZT_ave ) and power factor (PF_ave ) has been the utmost task in thermoelectrics. Here the new strategy to independently improve constituent factors in ZT is reported, giving exceptionally high ZT_ave and PF_ave in n-type PbSe. The nonstoichiometric, alloyed composition and resulting defect structures in new Pb_{1+ x} Se_0.8 Te_0.2 (x = 0-0.125) system is key to this achievement. First, incorporating excess Pb unusually increases carrier mobility (µ_H ) and concentration (n_H ) simultaneously in contrast to the general physics rule, thereby raising electrical conductivity (σ). Second, modifying charge scattering mechanism by the authors' synthesis process boosts a magnitude of Seebeck coefficient (S) above theoretical expectations. Detouring the innate inverse proportionality between n_H and µ_H ; and σ and S enables independent control over them and change the typical trend of PF to temperature, giving remarkably high PF_ave ≈20 µW cm^-1 K^-2 from 300 to 823 K. The dual incorporation of Te and excess Pb generates unusual antisite Pb at the anionic site and displaced Pb from the ideal position, consequently suppressing lattice thermal conductivity. The best composition exhibits a ZT_ave of ≈1.2 from 400 to 823 K, one of the highest reported for all n-type PbQ (Q = chalcogens) materials.

Multiple valence bands convergence and strong phonon scattering lead to high thermoelectric performance in p-type PbSe

Thermoelectric generators enable the conversion of waste heat to electricity, which is an effective way to alleviate the global energy crisis. However, the inefficiency of thermoelectric materials is the main obstacle for realizing their widespread applications and thus developing materials with high thermoelectric performance is urgent. Here we show that multiple valence bands and strong phonon scattering can be realized simultaneously in p-type PbSe through the incorporation of AgInSe₂. The multiple valleys enable large weighted mobility, indicating enhanced electrical properties. Abundant nano-scale precipitates and dislocations result in strong phonon scattering and thus ultralow lattice thermal conductivity. Consequently, we achieve an exceptional ZT of ~ 1.9 at 873 K in p-type PbSe. This work demonstrates that a combination of band manipulation and microstructure engineering can be realized by tuning the composition, which is expected to be a general strategy for improving the thermoelectric performance in bulk materials.

High-performance thermoelectrics and challenges for practical devices

Thermoelectric materials can be potentially employed in solid-state devices that harvest waste heat and convert it to electrical power, thereby improving the efficiency of fuel utilization. The spectacular increases in the efficiencies of these materials achieved over the past decade have raised expectations regarding the use of thermoelectric generators in various energy saving and energy management applications, especially at mid to high temperature (400-900 °C). However, several important issues that prevent successful thermoelectric generator commercialization remain unresolved, in good part because of the lack of a research roadmap.

Valence Disproportionation of GeS in the PbS Matrix Forms Pb5Ge5S12 Inclusions with Conduction Band Alignment Leading to High n-Type Thermoelectric Performance

Converting waste heat into useful electricity using solid-state thermoelectrics has a potential for enormous global energy savings. Lead chalcogenides are among the most prominent thermoelectric materials, whose performance decreases with an increase in chalcogen amounts (e.g., PbTe > PbSe > PbS). Herein, we demonstrate the simultaneous optimization of the electrical and thermal transport properties of PbS-based compounds by alloying with GeS. The addition of GeS triggers a complex cascade of beneficial events as follows: Ge²⁺ substitution in Pb²⁺ and discordant off-center behavior; formation of Pb₅Ge₅S₁₂ as stable second-phase inclusions through valence disproportionation of Ge²⁺ to Ge⁰ and Ge⁴⁺. PbS and Pb₅Ge₅S₁₂ exhibit good conduction band energy alignment that preserves the high electron mobility; the formation of Pb₅Ge₅S₁₂ increases the electron carrier concentration by introducing S vacancies. Sb doping as the electron donor produces a large power factor and low lattice thermal conductivity (κ_lat) of ∼0.61 W m^-1 K^-1. The highest performance was obtained for the 14% GeS-alloyed samples, which exhibited an increased room-temperature electron mobility of ∼121 cm² V^-1 s^-1 for 3 × 10¹⁹ cm^-3 carrier density and a ZT of 1.32 at 923 K. This is ∼55% greater than the corresponding Sb-doped PbS sample and is one of the highest reported for the n-type PbS system. Moreover, the average ZT (ZT_avg) of ∼0.76 from 400 to 923 K is the highest for PbS-based systems.

Achieving Ultralow Lattice Thermal Conductivity and High Thermoelectric Performance in GeTe Alloys via Introducing Cu2Te Nanocrystals and Resonant Level Doping

The binary compound of GeTe emerging as a potential medium-temperature thermoelectric material has drawn a great deal of attention. Here, we achieve ultralow lattice thermal conductivity and high thermoelectric performance in In and a heavy content of Cu codoped GeTe thermoelectrics. In dopants improve the density of state near the surface of Femi of GeTe by introducing resonant levels, producing a sharp increase of the Seebeck coefficient. In and Cu codoping not only optimizes carrier concentration but also substantially increases carrier mobility to a high value of 87 cm² V^-1 s^-1 due to the diminution of Ge vacancies. The enhanced Seebeck coefficient coupled with dramatically enhanced carrier mobility results in significant enhancement of PF in Ge_1.04-x-yIn_xCu_yTe series. Moreover, we introduce Cu₂Te nanocrystals' secondary phase into GeTe by alloying a heavy content of Cu. Cu₂Te nanocrystals and a high density of dislocations cause strong phonon scattering, significantly diminishing lattice thermal conductivity. The lattice thermal conductivity reduced as low as 0.31 W m^-1 K^-1 at 823 K, which is not only lower than the amorphous limit of GeTe but also competitive with those of thermoelectric materials with strong lattice anharmonicity or complex crystal structures. Consequently, a high ZT of 2.0 was achieved for Ge_0.9In_0.015Cu_0.125Te by decoupling electron and phonon transport of GeTe. This work highlights the importance of phonon engineering in advancing high-performance GeTe thermoelectrics.

Conformal High-Power-Density Half-Heusler Thermoelectric Modules: A Pathway toward Practical Power Generators

Thermoelectric generators (TEGs) exploiting the Seebeck effect provide a promising solution for waste heat recovery. Among the large number of thermoelectric (TE) materials, half-Heusler (hH) alloys are leading candidates for medium- to high-temperature power generation applications. However, the fundamental challenge in this field has been inhomogeneous material properties at large wafer diameters, insufficient power output from the modules, and rigid form factors of TE modules. This has restricted the transition of TEGs in practical applications for over three decades. Here, we successfully demonstrate large diameter wafers with uniform TE properties, high-power conformal hH TE modules for high-temperature application, and their direct integration on flue gas platforms, such as cylindrical tubes, to form large area flexible TEGs. This new conformal architecture design provides a breakthrough toward medium-/high-temperature TEGs over the conventional BiTe- and polymer-based flexible TEG design. A variable fill factor and greater flexibility due to the conformal design result in higher device performance as compared to conventional rigid TEG devices. Modules with 72-couple hH legs exhibit a device high-power-density of 3.13 W cm^-2 and a total output power of 56.6 W under a temperature difference of 570 °C. These results provide a promising pathway toward widespread utilization of thermoelectric technology into the waste heat recovery application and will have a significant impact on the development of practical thermal to electrical converters.

Novel optimization perspectives for thermoelectric properties based on Rashba spin splitting: a mini review

The energy problem has recently become increasingly more serious, therefore the rational use of heat energy and conversion into electrical energy is particularly important. The thermoelectric (TE) field is closely related to human life, as heat from automobiles, heat dissipation from high-power electrical appliances, or other electrical products that produce a lot of heat, can all be transformed with TE materials. The search for TE materials with an excellent performance and effective TE optimization strategies (STs) has attracted significant attention owing to the fact that thermal energy can be directly converted into electric energy. In contrast to the common TE-optimized STs, such as constructing point defects or reducing dimensionality, spin-related optimization STs have emerged from previous published research, such as the spin Seebeck effect or the Rashba effect, in which the Rashba effect shows an effective method to break through the bottleneck of ZT optimization. In this review, typical high ZT materials, common traditional optimized STs, Rashba-type TE materials and their corresponding ZT values are comprehensively discussed. The TE performance of Rashba-type materials is analysed, such as BiTeX (X = I, Br), GeTe, BiSbSeTe₂, and the BiSb monolayer. Moreover, the TE optimization mechanisms (band engineering, phonon engineering, and Rashba spin-split engineering) are summarised. Finally, the development and challenges of Rashba spin-split combined with TE in breaking the bottleneck in ZT optimization are highlighted.

Mixed-Valence CsCu4Se3: Large Phonon Anharmonicity Driven by the Hierarchy of the Rigid [(Cu+)4(Se2-)2](Se-) Double Anti-CaF2 Layer and the Soft Cs+ Sublattice

Crystalline solids that exhibit inherently low lattice thermal conductivity (κ_lat) have attracted a great deal of attention because they offer the only independent control for pursuing a high thermoelectric figure of merit (ZT). Herein, we report the successful preparation of CsCu₄Q₃ (Q = S (compound 1), Se (compound 2)) with the aid of a safe and facile boron-chalcogen method. The single-crystal diffraction data confirm the P4/mmm hierarchical structures built up by the mixed-valence [(Cu⁺)₄(Q^2-)₂](Q^-) double anti-CaF₂ layer and the NaCl-type Cs⁺ sublattice involving multiple bonding interactions. The electron-poor compound CsCu₄Q₃ features Cu-Q antibonding states around E_F that facilitates a high σ value of 3100 S/cm in 2 at 323 K. Significantly, the ultralow κ_lat value of 2, 0.20 W/m/K at 650 K (70% lower than that of Cu₂Se), is mainly driven by the vibrational coupling of the rigid double anti-CaF₂ layer and the soft NaCl-type sublattice. The hierarchical structure increases the bond multiplicity, which eventually leads to a large phonon anharmonicity, as evidenced by the effective scattering of the low-lying optical phonons to the heat-carrying acoustic phonons. Consequently, the acoustic phonon frequency in 2 drops sharply from 118 cm^-1 (of Cu₂Se) to 48 cm^-1. In addition, the elastic properties indicate that the hierarchical structure largely inhibits the transverse phonon modes, leading to a sound velocity (1571 m/s) and a Debye temperature (189 K) lower than those of Cu₂Se (2320 m/s; 292 K).

Entropy engineering promotes thermoelectric performance in p-type chalcogenides

We demonstrate that the thermoelectric properties of p-type chalcogenides can be effectively improved by band convergence and hierarchical structure based on a high-entropy-stabilized matrix. The band convergence is due to the decreased light and heavy band energy offsets by alloying Cd for an enhanced Seebeck coefficient and electric transport property. Moreover, the hierarchical structure manipulated by entropy engineering introduces all-scale scattering sources for heat-carrying phonons resulting in a very low lattice thermal conductivity. Consequently, a peak zT of 2.0 at 900 K for p-type chalcogenides and a high experimental conversion efficiency of 12% at ΔT = 506 K for the fabricated segmented modules are achieved. This work provides an entropy strategy to form all-scale hierarchical structures employing high-entropy-stabilized matrix. This work will promote real applications of low-cost thermoelectric materials.

Strong Valence Band Convergence to Enhance Thermoelectric Performance in PbSe with Two Chemically Independent Controls

We present an effective approach to favorably modify the electronic structure of PbSe using Ag doping coupled with SrSe or BaSe alloying. The Ag 4d states make a contribution to in the top of the heavy hole valence band and raise its energy. The Sr and Ba atoms diminish the contribution of Pb 6s² states and decrease the energy of the light hole valence band. This electronic structure modification increases the density-of-states effective mass, and strongly enhances the thermoelectric performance. Moreover, the Ag-rich nanoscale precipitates, discordant Ag atoms, and Pb/Sr, Pb/Ba point defects in the PbSe matrix work together to reduce the lattice thermal conductivity, resulting a record high average ZT_avg of around 0.86 over 400-923 K.

Exceptionally High Average Power Factor and Thermoelectric Figure of Merit in n-type PbSe by the Dual Incorporation of Cu and Te

Thermoelectric materials with high average power factor and thermoelectric figure of merit (ZT) has been a sought-after goal. Here, we report new n-type thermoelectric system Cu_xPbSe_0.99Te_0.01 (x = 0.0025, 0.004, and 0.005) exhibiting record-high average ZT ∼ 1.3 over 400-773 K ever reported for n-type polycrystalline materials including the state-of-the-art PbTe. We concurrently alloy Te to the PbSe lattice and introduce excess Cu to its interstitial voids. Their resulting strong attraction facilitates charge transfer from Cu atoms to the crystal matrix significantly. It follows the increased carrier concentration without damaging its mobility and the consequently improved electrical conductivity. This interaction also increases effective mass of electron in the conduction band according to DFT calculations, thereby raising the magnitude of Seebeck coefficient without diminishing electrical conductivity. Resultantly, Cu_0.005PbSe_0.99Te_0.01 attains an exceptionally high average power factor of ∼27 μW cm^-1 K^-2 from 400 to 773 K with a maximum of ∼30 μW cm^-1 K^-2 at 300 K, the highest among all n- and p-type PbSe-based materials. Its ∼23 μW cm^-1 K^-2 at 773 K is even higher than ∼21 μW cm^-1 K^-2 of the state-of-the-art n-type PbTe. Interstitial Cu atoms induce the formation of coherent nanostructures. They are highly mobile, displacing Pb atoms from the ideal octahedral center and severely distorting the local microstructure. This significantly depresses lattice thermal conductivity to ∼0.2 Wm^-1 K^-1 at 773 K below the theoretical lower bound. The multiple effects of the dual incorporation of Cu and Te synergistically boosts a ZT of Cu_0.005PbSe_0.99Te_0.01 to ∼1.7 at 773 K.

Thermoelectric performance of nanostructured In/Pb codoped SnTe with band convergence and resonant level prepared via a green and facile hydrothermal method

SnTe is considered as a promising alternative to the conventional high-performance thermoelectric material PbTe, which inspired the thermoelectric community for a while. Here, we design a green, facile and low-energy-intensity hydrothermal route without involving any toxic or unstable chemicals to fabricate SnTe-based thermoelectric materials. Ultralow lattice thermal conductivity and enhanced thermoelectric performance are achieved via the combination of band engineering and nanostructuring. Enhanced Seebeck coefficient and power factor are induced by converging the band structure and creating resonant levels due to Pb and In doping. More importantly, due to the reduced grain sizes, nanoparticles, and dual-atom point defect scattering, ultralow lattice thermal conductivity was obtained in the bulk samples fabricated by the hydrothermal route. Benefiting from the enhanced power factor and significantly reduced thermal conductivity, the peak ZT is enhanced to ∼0.7 in In/Pb codoped SnTe, a 60% improvement over pure SnTe.

3D extruded composite thermoelectric threads for flexible energy harvesting

Whereas the rigid nature of standard thermoelectrics limits their use, flexible thermoelectric platforms can find much broader applications, for example, in low-power, wearable energy harvesting for internet-of-things applications. Here we realize continuous, flexible thermoelectric threads via a rapid extrusion of 3D-printable composite inks (Bi₂Te₃n- or p-type micrograins within a non-conducting polymer as a binder) followed by compression through a roller-pair, and we demonstrate their applications in flexible, low-power energy harvesting. The thermoelectric power factors of these threads are enhanced up to 7 orders-of-magnitude after lateral compression, principally due to improved conductivity resulting from reduced void volume fraction and partial alignment of thermoelectric micrograins. This dependence is quantified using a conductivity/Seebeck vise for pressure-controlled studies. The resulting grain-to-grain conductivity is well explained with a modified percolation theory to model a pressure-dependent conductivity. Flexible thermoelectric modules are demonstrated to utilize thermal gradients either parallel or transverse to the thread direction.

Flexible thermoelectric composite threads are reported for wearable thermal energy harvesting platforms where rigid materials lack compatibility. Thermoelectric thread modules are demonstrated, and pressure-dependence shows thread compression to be essential for improving electrical conductivity.

Rattling-Induced Ultralow Thermal Conductivity Leading to Exceptional Thermoelectric Performance in AgIn5S8

Rattling has emerged as one of the most significant phenomenon for notably reducing the thermal conductivity in complex crystal systems. In this work, using first-principles density functional theory, we found that rattlers can be hosted in simpler crystal systems such as AgIn₅S₈ and CuIn₅S₈. Rattlers Ag and Cu exhibit weak and anisotropic bonding with the neighboring In and S and reside in a very shallow anharmonic potential well. The phonon spectra of these compounds have multiple avoided crossing of optical and acoustic modes, which are a signature of rattling motion. This leads to ultralow thermal conductivity, which is inversely proportional to mass and frequency span of rattling modes. Even though Ag atoms contribute to the valence band states, the rattler modes of Ag do not scatter carriers significantly, leaving the electronic transport virtually unaffected. Moreover, AgIn₅S₈ possesses a combination of heavy and light valence bands resulting in a very high power factor. A combination of favorable thermal and electronic transport results in a very high figure of merit of 2.2 in p-doped AgIn₅S₈ at 1000 K. The proposed idea of having rattlers in simpler systems can be extended to a wider class of materials, which would accelerate the development of thermoelectric modules for waste energy harvesting.

Synergistic Effect of Bismuth and Indium Codoping for High Thermoelectric Performance of Melt Spinning SnTe Alloys

In this work, a nonequilibrium melt spinning (MS) technology combined with hot pressing was adopted for rapid synthesizing of SnTe compounds in less than 1 h. The refined microstructure generated by MS significantly decreases the lattice thermal conductivity. Compared to the pristine SnTe sample prepared by traditional melting and long-term annealing, the melt-spun one reveals a 15% lower thermal conductivity of ∼6.8 W/m K at room temperature and a 10% higher zT of ∼0.65 at 900 K. To further improve the electrical transport properties of the SnTe system, elements of Bi and In are introduced. It was found that Bi and In codoping can enhance Seebeck coefficients in a broad temperature range via optimizing carrier density and introducing resonant states. Point defects and nanoparticles introduced by Bi and In codoping remarkably enhanced phonon scattering and decreased lattice thermal conductivities. Finally, a significant enhancement on the thermoelectric performance was achieved: a peak zT of 1.26 at 900 K and an average zT of ∼0.48 over the temperature range of 300-900 K are obtained in Sn_0.9675Bi_0.03In_0.0025Te. This work demonstrates that MS combined with appropriate doping could be an effective strategy to improve the thermoelectric performance of SnTe-related samples.

Charge Compensation Modulation of the Thermoelectric Properties in AgSbTe2 via Mn Amphoteric Doping

In thermoelectric research, the introduction of a dopant can suppress lattice thermal conductivity (κ₁) through phonon scattering and optimize the power factor (PF) by changing the behavior of carriers, which are the key prerequisites for high thermoelectric performance. However, the electrical thermal conductivity (κ_e) can also increase with the increase of electrical conductivity (σ), which may override the optimization in PF and be detrimental to the improvement of final ZT. In this work, we highlight an amphoteric doping method by using Mn atoms to substitute both Ag and Sb atoms in AgSbTe₂. The Mn_Sb positive doping in p-type AgSbTe₂ can improve the σ through increasing the hole concentration while maintaining a relative high Seebeck coefficient (S), thus substantially improving the PF. On the other hand, the Mn_Ag negative doping can introduce electrons into the matrix, which will recombine with the major hole carriers and lead to a decrease of σ to suppress exorbitant κ_e induced by the Mn_Sb doping. The combination of the both functions by Mn amphoteric doping can further improve the thermoelectric property through charge compensation modulation. By virtue of amphoteric doping, though σ is decreased, PF is further optimized because of increased S, while the total thermal conductivity (κ_total) is further decreased due to suppressed κ_e and additional phonon scattering, which are beneficial for the improvement of the final ZT value. As a result, 5 mol % Mn_Ag-Mn_Sb amphoteric doping AgSbTe₂ sample achieves a maximum ZT value of ∼0.74 at 550 K, which is higher than that of the pristine sample and other Mn monodoped counterparts. The present work suggests charge compensation modulation via amphoteric doping as an effective avenue to simultaneously achieve low thermal conductivity and high power factor for better thermoelectric performance.