Photothermoelectric and photoelectric contributions to light detection in metal-graphene-metal photodetectors

Light-driven nanoscale vectorial currents

Controlled charge flows are fundamental to many areas of science and technology, serving as carriers of energy and information, as probes of material properties and dynamics1 and as a means of revealing2,3 or even inducing4,5 broken symmetries. Emerging methods for light-based current control5-16 offer particularly promising routes beyond the speed and adaptability limitations of conventional voltage-driven systems. However, optical generation and manipulation of currents at nanometre spatial scales remains a basic challenge and a crucial step towards scalable optoelectronic systems for microelectronics and information science. Here we introduce vectorial optoelectronic metasurfaces in which ultrafast light pulses induce local directional charge flows around symmetry-broken plasmonic nanostructures, with tunable responses and arbitrary patterning down to subdiffractive nanometre scales. Local symmetries and vectorial currents are revealed by polarization-dependent and wavelength-sensitive electrical readout and terahertz (THz) emission, whereas spatially tailored global currents are demonstrated in the direct generation of elusive broadband THz vector beams17. We show that, in graphene, a detailed interplay between electrodynamic, thermodynamic and hydrodynamic degrees of freedom gives rise to rapidly evolving nanoscale driving forces and charge flows under the extremely spatially and temporally localized excitation. These results set the stage for versatile patterning and optical control over nanoscale currents in materials diagnostics, THz spectroscopies, nanomagnetism and ultrafast information processing.

Pulse irradiation synthesis of metal chalcogenides on flexible substrates for enhanced photothermoelectric performance

High synthesis temperatures and specific growth substrates are typically required to obtain crystalline or oriented inorganic functional thin films, posing a significant challenge for their utilization in large-scale, low-cost (opto-)electronic applications on conventional flexible substrates. Here, we explore a pulse irradiation synthesis (PIS) to prepare thermoelectric metal chalcogenide (e.g., Bi2Se3, SnSe2, and Bi2Te3) films on multiple polymeric substrates. The self-propagating combustion process enables PIS to achieve a synthesis temperature as low as 150 °C, with an ultrafast reaction completed within one second. Beyond the photothermoelectric (PTE) property, the thermal coupling between polymeric substrates and bismuth selenide films is also examined to enhance the PTE performance, resulting in a responsivity of 71.9 V/W and a response time of less than 50 ms at 1550 nm, surpassing most of its counterparts. This PIS platform offers a promising route for realizing flexible PTE or thermoelectric devices in an energy-, time-, and cost-efficient manner.

Zero-Bias Photodetection in 2D Materials via Geometric Design of Contacts

Structural or crystal asymmetry is a necessary condition for the emergence of zero-bias photocurrent in light detectors. Structural asymmetry has been typically achieved via p-n doping, which is a technologically complex process. Here, we propose an alternative approach to achieve zero-bias photocurrent in two-dimensional (2D) material flakes exploiting the geometrical nonequivalence of source and drain contacts. As a prototypical example, we equip a square-shaped flake of PdSe₂ with mutually orthogonal metal leads. Upon uniform illumination with linearly polarized light, the device demonstrates nonzero photocurrent which flips its sign upon 90° polarization rotation. The origin of zero-bias photocurrent lies in a polarization-dependent lightning-rod effect. It enhances the electromagnetic field at one contact from the orthogonal pair and selectively activates the internal photoeffect at the respective metal-PdSe₂ Schottky junction. The proposed technology of contact engineering is independent of a particular light-detection mechanism and can be extended to arbitrary 2D materials.

System design of large-area vertical photothermoelectric detectors based on carbon nanotube forests with MXene electrodes

Photothermoelectric (PTE) detectors that combine photothermal and thermoelectric conversion have emerged in recent years. They can overcome bandgap limitations and achieve effective infrared detection. However, the development of PTE detectors and the related system design are in the early phases. Herein, we present vertical PTE detectors utilizing the active layer of carbon nanotube forests with MXenes acting as top electrodes. The detector demonstrates its capacity for sensitive infrared detection and rapid infrared response. We also investigated the relationship between photoresponse and different MXene electrode types as well as their thickness, which guides the PTE detector configuration design. Furthermore, we packed the PTE detectors with a polytetrafluoroethylene (PTFE, Teflon) cavity. The photoresponse is improved and the degradation is significantly delayed. We also applied this PTE detector system for non-destructive tracking (NDT) applications, where the photovoltage mapping pattern proves the viability of the imaging track. This work paves the way toward infrared energy harvesters and customized industrial NDT measurement.

Optical Duality of Molybdenum Disulfide: Metal and Semiconductor

The two different light-matter interactions between visible and infrared light are not switchable because control mechanisms have not been elucidated so far, which restricts the effective spectral range in light-sensing devices. In this study, modulation of the effective spectral range is demonstrated using the metal-insulator transition of MoS₂. Nondegenerate MoS₂ exhibits a photoconductive effect in detecting visible light. In contrast, degenerate MoS₂ responds only to mid-infrared (not visible) light by displaying a photoinduced heating effect via free carrier absorption. Depending on the doping level, the optical behavior of MoS₂ simulates the photoconductivity of either the semiconductor or the metal, further indicating that the optical metal-insulator transition is coherent with its electrical counterpart. The electrical switchability of MoS₂ enables the development of an unprecedented and novel design optical sensor that can detect both visible and mid-IR (wavelength of 9.6 μm) ranges with a singular optoelectronic device.

Unbiased Plasmonic-Assisted Integrated Graphene Photodetectors

Photonic integrated circuits (PICs) for next-generation optical communication interconnects and all-optical signal processing require efficient (∼A/W) and fast (≥25 Gbs^-1) light detection at low (<pJbit^-1) power consumption, in devices compatible with Si processing, so that the monolithic integration of electro-optical materials and electronics can be achieved consistently at the wafer scale. Graphene-based photodetectors can meet these criteria, thanks to their broadband absorption, ultra-high mobility, ultra-fast electron interactions, and strong photothermoelectric effect. High responsivities (∼ 1 A/W), however, have only been demonstrated in biased configurations, which introduce dark current, noise, and power consumption, while unbiased schemes, with low noise and zero consumption, have remained in the ∼ 0.1 A/W regime. Here, we consider the unbiased asymmetric configuration and show that optimized plasmonic enhanced devices can reach for both transverse-electric and transverse-magnetic modes (at λ = 1550 nm), ∼A/W responsivity, and ∼ 100 GHz operation speed at zero power consumption. We validate the model and material parameters by simulating experimental devices and derive analytical expressions for the responsivity. Our comprehensive modeling paves the way for efficient, fast, and versatile optical detection in PICs with zero power consumption.

Performance enhancement of an ultrafast graphene photodetector via simultaneous two-mode absorption in a hybrid plasmonic waveguide

An ultrafast, compact, zero-biased, and complementary metal-oxide semiconductor-compatible graphene photodetector (PD) based on a silicon-on-insulator hybrid plasmonic waveguide (HPWG) is proposed. Lumerical MODE solver is employed to investigate the modal characteristics of TM-polarized modes in the HPWG composing the PD. It is shown that the input light can be completely coupled into the photonic-like and plasmonic-like fundamental TM modes at the PD section. These two modes are exploited together in the photodetection process to enhance the PD performance. A rigorous analysis is performed in order to extract the optoelectronic characteristics of the single-layer graphene (SLG) used in the proposed structure. Lumerical 3D-FDTD solver is then employed to quantify the light interaction of the two aforementioned optical modes with the SLG. With a proper design at a wavelength of 1550 nm, the PD voltage responsivity reaches 2.8 V/W, and the photocurrent responsivity is obtained as 18.5 mA/W, while the corresponding absorption length is kept below 8µm and the noise equivalent power is limited to 3.7pW/Hz. Moreover, as the PD operates under zero bias, its photoresponse is predominated by the photothermoelectric mechanism, exhibiting a bandwidth that exceeds 180 GHz while avoiding the dark current.

Enhanced photothermoelectric detection in Co:BiCuSeO crystals with tunable Seebeck effect

BiCuSeO is a widely-used thermoelectric material recently proved to be an appealing candidate for broadband photothermoelectric (PTE) detection. Developing a simple and scalable route for advancing PTE properties is therefore essential to explore the full potential of BiCuSeO. Here we systematically demonstrated that Co³⁺ atomic doping strategies in BiCuSeO single crystals (Co concentration of 1%, 2% and 4%) could modulate the Seebeck coefficient and thus strongly improve the performance of BiCuSeO PTE photodetectors across visible to infrared spectral regions. Benefiting from these strategies, a large enhancement on photovoltage responsivity is achieved and the response time of a 4% Co:BiCuSeO PTE photodetector is one order of magnitude faster than those in most of PTE photodetectors. Also, Co:BiCuSeO PTE photodetectors show good stability with changeless photoresponse after being exposed to air for three months. Therefore, the controllable atomic doping of BiCuSeO with tunable PTE properties as well as fast and broadband photodetection provides the feasibility for facilitating ongoing research toward PTE devices.

Highly sensitive broadband binary photoresponse in gateless epitaxial graphene on 4H-SiC

Due to weak light-matter interaction, standard chemical vapor deposition (CVD)/exfoliated single-layer graphene-based photodetectors show low photoresponsivity (on the order of mA/W). However, epitaxial graphene (EG) offers a more viable approach for obtaining devices with good photoresponsivity. EG on 4H-SiC also hosts an interfacial buffer layer (IBL), which is the source of electron carriers applicable to quantum optoelectronic devices. We utilize these properties to demonstrate a gate-free, planar EG/4H-SiC-based device that enables us to observe the positive photoresponse for (405-532) nm and negative photoresponse for (632-980) nm laser excitation. The broadband binary photoresponse mainly originates from the energy band alignment of the IBL/EG interface and the highly sensitive work function of the EG. We find that the photoresponsivity of the device is > 10 A/W under 405 nm of power density 7.96 mW/cm² at 1 V applied bias, which is three orders of magnitude greater than the obtained values of CVD/exfoliated graphene and higher than the required value for practical applications. These results path the way for selective light-triggered logic devices based on EG and can open a new window for broadband photodetection.

Hot carriers in graphene - fundamentals and applications

Hot charge carriers in graphene exhibit fascinating physical phenomena, whose understanding has improved greatly over the past decade. They have distinctly different physical properties compared to, for example, hot carriers in conventional metals. This is predominantly the result of graphene's linear energy-momentum dispersion, its phonon properties, its all-interface character, and the tunability of its carrier density down to very small values, and from electron- to hole-doping. Since a few years, we have witnessed an increasing interest in technological applications enabled by hot carriers in graphene. Of particular interest are optical and optoelectronic applications, where hot carriers are used to detect (photodetection), convert (nonlinear photonics), or emit (luminescence) light. Graphene-enabled systems in these application areas could find widespread use and have a disruptive impact, for example in the field of data communication, high-frequency electronics, and industrial quality control. The aim of this review is to provide an overview of the most relevant physics and working principles that are relevant for applications exploiting hot carriers in graphene.

Core@shell and lateral heterostructures composed of SnS and NbS2

The spatial arrangement of heterostructures based on two-dimensional layered materials is important in controlling their electronic and optoelectronic properties. In this contribution, by controlling the reaction kinetics and thus the nucleation and growth sequence of p-type SnS and metallic NbS2, controllable preparation of both SnS@NbS2 core@shell and SnS/NbS2 lateral heterostructures was realized. The SnS@NbS2 core@shell heterostructures were further applied in photodetectors, and interestingly, a negative photoresponse was observed due to the Seebeck effect exerted on the NbS2 shell. Compared with the pure metallic NbS2, the SnS@NbS2 core@shell heterostructures showed a 15 times increased signal-to-noise ratio and much improved photocurrent stability, largely due to the charge and heat transfer between the SnS core and NbS2 shell.

Single Metal Photodetectors Using Plasmonically-Active Asymmetric Gold Nanostructures

Plasmonic-based photodetectors are receiving increased attention because simple structural changes can make the photodetectors spectrally sensitive. In this study, asymmetric gold nanostructures are used as simple structures for photodetection via the photothermoelectric response. These single metal photodetectors use localized optical absorption from plasmon resonances of gold nanowires at desired wavelengths to generate temperature gradients. Combined with a geometry-dependent Seebeck coefficient, the result is a net electrical signal when the whole geometry is illuminated, with spectral sensitivity and polarization dependence from the plasmon resonances. We show experimental results and simulations of single-wavelength photodetectors at two wavelengths in the near IR range: 785 and 1060 nm. Based on simulation results and a model for the geometry-dependent Seebeck response, we demonstrate a photodetector structure that generates polarization-sensitive responses of opposite signs for the two wavelengths. The experimental photothermoelectric results are combined with simulations to infer the geometry dependence of the Seebeck response. These results can be used to increase the responsivity of these photodetectors further.

Ultrafast, Zero-Bias, Graphene Photodetectors with Polymeric Gate Dielectric on Passive Photonic Waveguides

We report compact, scalable, high-performance, waveguide integrated graphene-based photodetectors (GPDs) for telecom and datacom applications, not affected by dark current. To exploit the photothermoelectric (PTE) effect, our devices rely on a graphene/polymer/graphene stack with static top split gates. The polymeric dielectric, poly(vinyl alcohol) (PVA), allows us to preserve graphene quality and to generate a controllable p-n junction. Both graphene layers are fabricated using aligned single-crystal graphene arrays grown by chemical vapor deposition. The use of PVA yields a low charge inhomogeneity ∼8 × 10¹⁰ cm^-2 at the charge neutrality point, and a large Seebeck coefficient ∼140 μV K^-1, enhancing the PTE effect. Our devices are the fastest GPDs operating with zero dark current, showing a flat frequency response up to 67 GHz without roll-off. This performance is achieved on a passive, low-cost, photonic platform, and does not rely on nanoscale plasmonic structures. This, combined with scalability and ease of integration, makes our GPDs a promising building block for next-generation optical communication devices.

A Review on Graphene-Based Light Emitting Functional Devices

In recent years, the field of nanophotonics has progressively developed. However, constant demand for the development of new light source still exists at the nanometric scale. Light emissions from graphene-based active materials can provide a leading platform for the development of two dimensional (2-D), flexible, thin, and robust light-emitting sources. The exceptional structure of Dirac's electrons in graphene, massless fermions, and the linear dispersion relationship with ultra-wideband plasmon and tunable surface polarities allows numerous applications in optoelectronics and plasmonics. In this article, we present a comprehensive review of recent developments in graphene-based light-emitting devices. Light emissions from graphene-based devices have been evaluated with different aspects, such as thermal emission, electroluminescence, and plasmons assisted emission. Theoretical investigations, along with experimental demonstration in the development of graphene-based light-emitting devices, have also been reviewed and discussed. Moreover, the graphene-based light-emitting devices are also addressed from the perspective of future applications, such as optical modulators, optical interconnects, and optical sensing. Finally, this review provides a comprehensive discussion on current technological issues and challenges related to the potential applications of emerging graphene-based light-emitting devices.

Highly Efficient Photothermal Conversion of Ti3C2Tx/Ionic Liquid Gel Pen Ink for Smoothly Writing Ultrasensitive, Wide-Range Detecting, and Flexible Thermal Sensors

Photothermal conversion behavior has a vital application to disease therapy, water purification, or uncontacted heaters. The fabrication of high-performance photothermal conversion materials especially for near-infrared (NIR) light and microstructures has attracted a great deal of attention. Among numerous substances, MXene as a new type of 2D material with semi-metallic and unique electromagnetic properties presents a broader absorption of light and even a typical plasmonic absorption near the NIR-I area (808 nm), which has made it suitable for photothermal conversion. Here, we propose a facile approach for preparing a Ti₃C₂T_x/ionic liquid ink with a high photothermal conversion efficiency. The as-prepared ink has showed good wettability of various substrates as well as the high sensitivity of 808 nm NIR light irradiation and a wide range of thermal variation. After packing the ink into a gel pen refill, the flexible thermal chips could be easily obtained just by pen writing on the soft surface with the designed size, which also have become an optimal candidate for the thermal alarm system.

Integration of plasmonic heating and on-chip temperature sensor for nucleic acid amplification assays

Nucleic acid tests have been widely used for diagnosis of diseases by detecting the relevant genetic markers that are usually amplified using polymerase chain reaction (PCR). This work reports the use of a plasmonic device as an efficient and low-cost PCR thermocycler to facilitate nucleic acid-based diagnosis. The thermoplasmonic device, consisting of a one-dimensional metal grating, exploited the strong light absorption of plasmonic resonance modes to heat up PCR reagents using a near-infrared laser source. The plasmonic device also integrated a thin-film thermocouple on the metal grating to monitor the sample temperature. The plasmonic thermocycler is capable of performing a PCR amplification cycle in ~2.5 minutes. We successfully demonstrated the multiplex and real-time PCR amplifications of the antibiotic resistance genes using the genomic DNAs extracted from Acinetobacter baumannii, Klebsiella pneumonia, Escherichia coli and Campylobacter.

Machine learning and evolutionary algorithm studies of graphene metamaterials for optimized plasmon-induced transparency

Machine learning and optimization algorithms have been widely applied in the design and optimization for photonics devices. We briefly review recent progress of this field of research and show data-driven applications, including spectrum prediction, inverse design and performance optimization, for novel graphene metamaterials (GMs). The structure of the GMs is well-designed to achieve the wideband plasmon induced transparency (PIT) effect, which can be theoretically demonstrated by using the transfer matrix method. Some traditional machine learning algorithms, including k nearest neighbour, decision tree, random forest and artificial neural networks, are utilized to equivalently substitute the numerical simulation in the forward spectrum prediction and complete the inverse design for the GMs. The calculated results demonstrate that all algorithms are effective and the random forest has advantages in terms of accuracy and training speed. Moreover, evolutionary algorithms, including single-objective (genetic algorithm) and multi-objective optimization (NSGA-II), are used to achieve the steep transmission characteristics of PIT effect by synthetically taking many different performance metrics into consideration. The maximum difference between the transmission peaks and dips in the optimized transmission spectrum reaches 0.97. In comparison to previous works, we provide a guidance for intelligent design of photonics devices based on machine learning and evolutionary algorithms and a reference for the selection of machine learning algorithms for simple inverse design problems.

Graphene Plasmonic Fractal Metamaterials for Broadband Photodetectors

Metamaterials have recently established a new paradigm for enhanced light absorption in state-of-the-art photodetectors. Here, we demonstrate broadband, highly efficient, polarization-insensitive, and gate-tunable photodetection at room temperature in a novel metadevice based on gold/graphene Sierpinski carpet plasmonic fractals. We observed an unprecedented internal quantum efficiency up to 100% from the near-infrared to the visible range with an upper bound of optical detectivity of 10¹¹ Jones and a gain up to 10⁶, which is a fingerprint of multiple hot carriers photogenerated in graphene. Also, we show a 100-fold enhanced photodetection due to highly focused (up to a record factor of |E/E₀| ≈ 20 for graphene) electromagnetic fields induced by electrically tunable multimodal plasmons, spatially localized in self-similar fashion on the metasurface. Our findings give direct insight into the physical processes governing graphene plasmonic fractal metamaterials. The proposed structure represents a promising route for the realization of a broadband, compact, and active platform for future optoelectronic devices including multiband bio/chemical and light sensors.

Recent Progress of Two-Dimensional Thermoelectric Materials

Thermoelectric generators have attracted a wide research interest owing to their ability to directly convert heat into electrical power. Moreover, the thermoelectric properties of traditional inorganic and organic materials have been significantly improved over the past few decades. Among these compounds, layered two-dimensional (2D) materials, such as graphene, black phosphorus, transition metal dichalcogenides, IVA-VIA compounds, and MXenes, have generated a large research attention as a group of potentially high-performance thermoelectric materials. Due to their unique electronic, mechanical, thermal, and optoelectronic properties, thermoelectric devices based on such materials can be applied in a variety of applications. Herein, a comprehensive review on the development of 2D materials for thermoelectric applications, as well as theoretical simulations and experimental preparation, is presented. In addition, nanodevice and new applications of 2D thermoelectric materials are also introduced. At last, current challenges are discussed and several prospects in this field are proposed.

Tunable Photoresponse by Gate Modulation in Bilayer Graphene Nanoribbon Devices

Control of absorption and photocurrent conversion is of practical importance for the design of photoelectric devices. In this paper, using simulations, we demonstrate that the photoresponse of a bilayer graphene nanoribbon (GNR) device can be controlled by gate voltage modulation. A vertical gate field shifts the potential on the top and bottom layers in opposite directions, resulting in a continuous change of band gap with applied gate voltage. This field simultaneously facilitates separation of photoexcited electron-hole pairs and gives rise to a photocurrent in a selected photon energy range. The photoresponse of a bilayer GNR device can thus be tuned by adjusting the applied gate voltage. In addition, the light frequency range can be changed by using nanoribbons of different widths. These findings provide a basis for the design of adjustable optoelectronic devices using two-dimensional materials.

Progress of Photodetectors Based on the Photothermoelectric Effect

High-performance uncooled photodetectors operating in the long-wavelength infrared and terahertz regimes are highly demanded in the military and civilian fields. Photothermoelectric (PTE) detectors, which combine photothermal and thermoelectric conversion processes, can realize ultra-broadband photodetection without the requirement of a cooling unit and external bias. In the last few decades, the responsivity and speed of PTE-based photodetectors have made impressive progress with the discovery of novel thermoelectric materials and the development of nanophotonics. In particular, by introducing hot-carrier transport into low-dimensional material-based PTE detectors, the response time has been successfully pushed down to the picosecond level. Furthermore, with the assistance of surface plasmon, antenna, and phonon absorption, the responsivity of PTE detectors can be significantly enhanced. Beyond the photodetection, PTE effect can also be utilized to probe exotic physical phenomena in spintronics and valleytronics. Herein, recent advances in PTE detectors are summarized, and some potential strategies to further improve the performance are proposed.

Waveguide-Integrated, Plasmonic Enhanced Graphene Photodetectors

We present a micrometer-scale, on-chip integrated, plasmonic enhanced graphene photodetector (GPD) for telecom wavelengths operating at zero dark current. The GPD is designed to directly generate a photovoltage by the photothermoelectric effect. It is made of chemical vapor deposited single layer graphene, and has an external responsivity ∼12.2 V/W with a 3 dB bandwidth ∼42 GHz. We utilize Au split-gates to electrostatically create a p-n-junction and simultaneously guide a surface plasmon polariton gap-mode. This increases the light-graphene interaction and optical absorption and results in an increased electronic temperature and steeper temperature gradient across the GPD channel. This paves the way to compact, on-chip integrated, power-efficient graphene based photodetectors for receivers in tele- and datacom modules.

Electrostatics of metal-graphene interfaces: sharp p-n junctions for electron-optical applications

Creation of sharp lateral p-n junctions in graphene devices, with transition widths w well below the Fermi wavelength λF of graphene's charge carriers, is vital to study and exploit these electronic systems for electron-optical applications. The achievement of such junctions is, however, not trivial due to the presence of a considerable out-of-plane electric field in lateral p-n junctions, resulting in large widths. Metal-graphene interfaces represent a novel, promising and easy to implement technique to engineer such sharp lateral p-n junctions in graphene field-effect devices, in clear contrast to the much wider (i.e. smooth) junctions achieved via conventional local gating. In this work, we present a systematic and robust investigation of the electrostatic problem of metal-induced lateral p-n junctions in gated graphene devices for electron-optics applications, systems where the width w of the created junctions is not only determined by the metal used but also depends on external factors such as device geometries, dielectric environment and different operational parameters such as carrier density and temperature. Our calculations demonstrate that sharp junctions (w ≪ λF) can be achieved via metal-graphene interfaces at room temperature in devices surrounded by dielectric media with low relative permittivity (<10). In addition, we show how specific details such as the separation distance between metal and graphene and the permittivity of the gap in-between plays a critical role when defining the p-n junction, not only defining its width w but also the energy shift of graphene underneath the metal. These results can be extended to any two-dimensional (2D) electronic system doped by the presence of metal clusters and thus are relevant for understanding interfaces between metals and other 2D materials.

Plasmon induced thermoelectric effect in graphene

Graphene has emerged as a promising material for optoelectronics due to its potential for ultrafast and broad-band photodetection. The photoresponse of graphene junctions is characterized by two competing photocurrent generation mechanisms: a conventional photovoltaic effect and a more dominant hot-carrier-assisted photothermoelectric (PTE) effect. The PTE effect is understood to rely on variations in the Seebeck coefficient through the graphene doping profile. A second PTE effect can occur across a homogeneous graphene channel in the presence of an electronic temperature gradient. Here, we study the latter effect facilitated by strongly localised plasmonic heating of graphene carriers in the presence of nanostructured electrical contacts resulting in electronic temperatures of the order of 2000 K. At certain conditions, the plasmon-induced PTE photocurrent contribution can be isolated. In this regime, the device effectively operates as a sensitive electronic thermometer and as such represents an enabling technology for development of hot carrier based plasmonic devices.

The photoresponse of graphene-based photodetectors is dominated by photovoltaic and photothermoelectric effects. Here, the authors leverage strongly localised plasmonic heating of graphene carriers to detect a second photothermoelectric effect occurring across a homogeneous channel in the presence of an electronic temperature gradient.

Graphene-Based Light Sensing: Fabrication, Characterisation, Physical Properties and Performance

Graphene and graphene-based materials exhibit exceptional optical and electrical properties with great promise for novel applications in light detection. However, several challenges prevent the full exploitation of these properties in commercial devices. Such challenges include the limited linear dynamic range (LDR) of graphene-based photodetectors, the lack of efficient generation and extraction of photoexcited charges, the smearing of photoactive junctions due to hot-carriers effects, large-scale fabrication and ultimately the environmental stability of the constituent materials. In order to overcome the aforementioned limits, different approaches to tune the properties of graphene have been explored. A new class of graphene-based devices has emerged where chemical functionalisation, hybridisation with light-sensitising materials and the formation of heterostructures with other 2D materials have led to improved performance, stability or versatility. For example, intercalation of graphene with FeCl 3 is highly stable in ambient conditions and can be used to define photo-active junctions characterized by an unprecedented LDR while graphene oxide (GO) is a very scalable and versatile material which supports the photodetection from UV to THz frequencies. Nanoparticles and quantum dots have been used to enhance the absorption of pristine graphene and to enable high gain thanks to the photogating effect. In the same way, hybrid detectors made from stacked sequences of graphene and layered transition-metal dichalcogenides enabled a class of devices with high gain and responsivity. In this work, we will review the performance and advances in functionalised graphene and hybrid photodetectors, with particular focus on the physical mechanisms governing the photoresponse, the performance and possible future paths of investigation.

Photoresponsivity of an all-semimetal heterostructure based on graphene and WTe2

Heterostructures based on two-dimensional (2D) materials have sparked wide interests in both fundamental physics and applied devices. Recently, Dirac/Weyl semimetals are emerging as capable functional materials for optoelectronic devices. However, thus far the interfacial coupling of an all-semimetal 2D heterostructure has not been investigated, and its effects on optoelectronic properties remain less well understood. Here, a heterostructure comprising of all semi-metallic constituents, namely graphene and WTe₂, is fabricated. Standard photocurrent measurements on a graphene/WTe₂ phototransistor reveal a pronounced photocurrent enhancement (a photoresponsivity ~8.7 A/W under 650 nm laser illumination). Transport and photocurrent mapping suggest that both photovoltaic and photothermoelectric effects contribute to the enhanced photoresponse of the hybrid system. Our results help to enrich the understanding of new and emerging device concepts based on 2D layered materials.

Competing Mechanisms for Photocurrent Induced at the Monolayer-Multilayer Graphene Junction

Graphene is characterized by demonstrated unique properties for potential novel applications in photodetection operated in the frequency range from ultraviolet to terahertz. To date, detailed work on identifying the origin of photoresponse in graphene is still ongoing. Here, scanning photocurrent microscopy to explore the nature of photocurrent generated at the monolayer-multilayer graphene junction is employed. It is found that the contributing photocurrent mechanism relies on the mismatch of the Dirac points between the monolayer and multilayer graphene. For overlapping Dirac points, only photothermoelectric effect (PTE) is observed at the junction. When they do not coincide, a different photocurrent due to photovoltaic effect (PVE) appears and becomes more pronounced with larger separation of the Dirac points. While only PTE is reported for a monolayer-bilayer graphene junction in the literature, this work confirms the coexistence of PTE and PVE, thereby extending the understanding of photocurrent in graphene-based heterojunctions.

Nonlinear Optics with 2D Layered Materials

2D layered materials (2DLMs) are a subject of intense research for a wide variety of applications (e.g., electronics, photonics, and optoelectronics) due to their unique physical properties. Most recently, increasing research efforts on 2DLMs are projected toward the nonlinear optical properties of 2DLMs, which are not only fascinating from the fundamental science point of view but also intriguing for various potential applications. Here, the current state of the art in the field of nonlinear optics based on 2DLMs and their hybrid structures (e.g., mixed-dimensional heterostructures, plasmonic structures, and silicon/fiber integrated structures) is reviewed. Several potential perspectives and possible future research directions of these promising nanomaterials for nonlinear optics are also presented.

Thermal Device Design for a Carbon Nanotube Terahertz Camera

Terahertz (THz) wave detectors are increasingly expected to serve as key components of powerful nondestructive and noncontact inspection tools in a large variety of fields. In contrast to conventional THz detectors based on rigid solid materials, we previously developed an uncooled and bendable THz camera based on the THz-induced photothermoelectric effect of carbon nanotube (CNT) array devices and demonstrated omnidirectional THz imaging of three-dimensional curved samples. Although this development opened a pathway to flexible THz electronics, the physical parameters that determine the performance of the CNT THz camera have not been fully investigated. As a result, the thermal device design has not been optimized in terms of the camera sensitivity and spatial resolution. In this work, we studied the underlying mechanism of the THz-induced photothermoelectric effect of the CNT camera and found physical factors related to the detector performance. Through simulation and experiments, we observed that the detection sensitivity and response time strongly depend on the CNT channel width and film thickness. We further identified that the irradiated wave penetration into the CNT film through the electrode materials deteriorates the detection area, which is directly linked to the camera spatial resolution. By utilizing the improved CNT device design fabricated based on these findings, we eliminated undesired signals generated via thermal diffusion and THz wave penetration and achieved higher-sensitivity THz detection and higher imaging resolution compared to our previously reported THz camera. The presented technologies are expected to contribute to future flexible THz imaging applications and will also be applicable to other types of photothermoelectric devices.

Towards substrate engineering of graphene-silicon Schottky diode photodetectors

Graphene-silicon Schottky diode photodetectors possess beneficial properties such as high responsivities and detectivities, broad spectral wavelength operation and high operating speeds. Various routes and architectures have been employed in the past to fabricate devices. Devices are commonly based on the removal of the silicon-oxide layer on the surface of silicon by wet-etching before deposition of graphene on top of silicon to form the graphene-silicon Schottky junction. In this work, we systematically investigate the influence of the interfacial oxide layer, the fabrication technique employed and the silicon substrate on the light detection capabilities of graphene-silicon Schottky diode photodetectors. The properties of devices are investigated over a broad wavelength range from near-UV to short-/mid-infrared radiation, radiation intensities covering over five orders of magnitude as well as the suitability of devices for high speed operation. Results show that the interfacial layer, depending on the required application, is in fact beneficial to enhance the photodetection properties of such devices. Further, we demonstrate the influence of the silicon substrate on the spectral response and operating speed. Fabricated devices operate over a broad spectral wavelength range from the near-UV to the short-/mid-infrared (thermal) wavelength regime, exhibit high photovoltage responses approaching 10⁶ V W^-1 and short rise- and fall-times of tens of nanoseconds.

Spin Hall photoconductance in a three-dimensional topological insulator at room temperature

Three-dimensional topological insulators are a class of Dirac materials, wherein strong spin-orbit coupling leads to two-dimensional surface states. The latter feature spin-momentum locking, i.e., each momentum vector is associated with a spin locked perpendicularly to it in the surface plane. While the principal spin generation capability of topological insulators is well established, comparatively little is known about the interaction of the spins with external stimuli like polarized light. We observe a helical, bias-dependent photoconductance at the lateral edges of topological Bi₂Te₂Se platelets for perpendicular incidence of light. The same edges exhibit also a finite bias-dependent Kerr angle, indicative of spin accumulation induced by a transversal spin Hall effect in the bulk states of the Bi₂Te₂Se platelets. A symmetry analysis shows that the helical photoconductance is distinct to common longitudinal photoconductance and photocurrent phenomena, but consistent with optically injected spins being transported in the side facets of the platelets.

While the spin generation in topological insulators is well studied, little is known about the interaction of the spins with external stimuli. Here, Seifert et al. observe a helical, bias-dependent photoconductance at the lateral edges of topological Bi₂Te₂Se platelets for perpendicular incidence of light, distinct to common longitudinal photoconductance phenomena.

Ultrahigh-Gain and Fast Photodetectors Built on Atomically Thin Bilayer Tungsten Disulfide Grown by Chemical Vapor Deposition

The low responsivity observed in photodetectors based on monolayer transition-metal dichalcogenides has encouraged the pursuit of approaches that can efficiently enhance the external quantum efficiency, which relies predominantly on the light absorption, the lifetime of the excess carriers, and the charge collection efficiency. Here, we demonstrate that phototransistors fabricated on large-area bilayer tungsten disulfide (WS₂) grown by chemical vapor deposition exhibit remarkable performance with photoresponsivity, photogain, and detectivity of up to ∼3 × 10³ A/W, 1.4 × 10⁴, and ∼5 × 10¹² Jones, respectively. These figures of merit of bilayer WS₂ provide a significant advantage over monolayer WS₂ due to the greatly improved carrier mobility and significantly reduced contact resistance. The photoresponsivity of bilayer WS₂ phototransistor can be further improved to up to 1 × 10⁴ A/W upon biasing a gate voltage of 60 V, without evident reduction in detectivity. Moreover, the bilayer WS₂ phototransistor exhibits a high response speed of less than 100 μs, large bandwidth of 4 kHz, high cycling reliability of over 10⁵ cycles, and spatially homogeneous photoresponse. These outstanding figures of merit make WS₂ bilayer a highly promising candidate for the design of high-performance optoelectronics in the visible regime.

Bipolar Photothermoelectric Effect Across Energy Filters in Single Nanowires

The photothermoelectric (PTE) effect uses nonuniform absorption of light to produce a voltage via the Seebeck effect and is of interest for optical sensing and solar-to-electric energy conversion. However, the utility of PTE devices reported to date has been limited by the need to use a tightly focused laser spot to achieve the required, nonuniform illumination and by their dependence upon the Seebeck coefficients of the constituent materials, which exhibit limited tunability and, generally, low values. Here, we use InAs/InP heterostructure nanowires to overcome these limitations: first, we use naturally occurring absorption "hot spots" at wave mode maxima within the nanowire to achieve sharp boundaries between heated and unheated subwavelength regions of high and low absorption, allowing us to use global illumination; second, we employ carrier energy-filtering heterostructures to achieve a high Seebeck coefficient that is tunable by heterostructure design. Using these methods, we demonstrate PTE voltages of hundreds of millivolts at room temperature from a globally illuminated nanowire device. Furthermore, we find PTE currents and voltages that change polarity as a function of the wavelength of illumination due to spatial shifting of subwavelength absorption hot spots. These results indicate the feasibility of designing new types of PTE-based photodetectors, photothermoelectrics, and hot-carrier solar cells using nanowires.

Position-dependent and millimetre-range photodetection in phototransistors with micrometre-scale graphene on SiC

The extraordinary optical and electronic properties of graphene make it a promising component of high-performance photodetectors. However, in typical graphene-based photodetectors demonstrated to date, the photoresponse only comes from specific locations near graphene over an area much smaller than the device size. For many optoelectronic device applications, it is desirable to obtain the photoresponse and positional sensitivity over a much larger area. Here, we report the spatial dependence of the photoresponse in backgated graphene field-effect transistors (GFET) on silicon carbide (SiC) substrates by scanning a focused laser beam across the GFET. The GFET shows a nonlocal photoresponse even when the SiC substrate is illuminated at distances greater than 500 µm from the graphene. The photoresponsivity and photocurrent can be varied by more than one order of magnitude depending on the illumination position. Our observations are explained with a numerical model based on charge transport of photoexcited carriers in the substrate.

Photocurrent Switching of Monolayer MoS2 Using a Metal-Insulator Transition

We achieve switching on/off the photocurrent of monolayer molybdenum disulfide (MoS₂) by controlling the metal-insulator transition (MIT). N-type semiconducting MoS₂ under a large negative gate bias generates a photocurrent attributed to the increase of excess carriers in the conduction band by optical excitation. However, under a large positive gate bias, a phase shift from semiconducting to metallic MoS₂ is caused, and the photocurrent by excess carriers in the conduction band induced by the laser disappears due to enhanced electron-electron scattering. Thus, no photocurrent is detected in metallic MoS₂. Our results indicate that the photocurrent of MoS₂ can be switched on/off by appropriately controlling the MIT transition by means of gate bias.

Graphene-based mid-infrared room-temperature pyroelectric bolometers with ultrahigh temperature coefficient of resistance

There is a growing number of applications demanding highly sensitive photodetectors in the mid-infrared. Thermal photodetectors, such as bolometers, have emerged as the technology of choice, because they do not need cooling. The performance of a bolometer is linked to its temperature coefficient of resistance (TCR, ∼2–4% K⁻¹ for state-of-the-art materials). Graphene is ideally suited for optoelectronic applications, with a variety of reported photodetectors ranging from visible to THz frequencies. For the mid-infrared, graphene-based detectors with TCRs ∼4–11% K⁻¹ have been demonstrated. Here we present an uncooled, mid-infrared photodetector, where the pyroelectric response of a LiNbO₃ crystal is transduced with high gain (up to 200) into resistivity modulation for graphene. This is achieved by fabricating a floating metallic structure that concentrates the pyroelectric charge on the top-gate capacitor of the graphene channel, leading to TCRs up to 900% K⁻¹, and the ability to resolve temperature variations down to 15 μK.

There is emerging interest in photodetectors in the mid-infrared driven by increasing need to monitor the environment for security and healthcare purposes. Sassi et al. show a thermal photodetector, based on the coupling between graphene and a pyroelectric crystal, which shows high temperature sensitivity.

Enhanced Graphene Photodetector with Fractal Metasurface

Graphene has been demonstrated to be a promising photodetection material because of its ultrabroadband optical absorption, compatibility with CMOS technology, and dynamic tunability in optical and electrical properties. However, being a single atomic layer thick, graphene has intrinsically small optical absorption, which hinders its incorporation with modern photodetecting systems. In this work, we propose a gold snowflake-like fractal metasurface design to realize broadband and polarization-insensitive plasmonic enhancement in graphene photodetector. We experimentally obtain an enhanced photovoltage from the fractal metasurface that is an order of magnitude greater than that generated at a plain gold-graphene edge and such an enhancement in the photovoltage sustains over the entire visible spectrum. We also observed a relatively constant photoresponse with respect to polarization angles of incident light, as a result of the combination of two orthogonally oriented concentric hexagonal fractal geometries in one metasurface.

Enhanced broadband photoresponse of substrate-free reduced graphene oxide photodetectors

Broadband responsivity enhancement of substrate-free device is achieved from the ultraviolet to near-infrared range just by removing the substrate of rGO film device.

Tunable Ultrafast Thermal Relaxation in Graphene Measured by Continuous-Wave Photomixing

Hot electron effects in graphene are significant because of graphene's small electronic heat capacity and weak electron-phonon coupling, yet the dynamics and cooling mechanisms of hot electrons in graphene are not completely understood. We describe a novel photocurrent spectroscopy method that uses the mixing of continuous-wave lasers in a graphene photothermal detector to measure the frequency dependence and nonlinearity of hot-electron cooling in graphene as a function of the carrier concentration and temperature. The method offers unparalleled sensitivity to the nonlinearity, and probes the ultrafast cooling of hot carriers with an optical fluence that is orders of magnitude smaller than in conventional time-domain methods, allowing for accurate characterization of electron-phonon cooling near charge neutrality. Our measurements reveal that near the charge neutral point the nonlinear power dependence of the electron cooling is dominated by disorder-assisted collisions, while at higher carrier concentrations conventional momentum-conserving cooling prevails in the nonlinear dependence. The relative contribution of these competing mechanisms can be electrostatically tuned through the application of a gate voltage-an effect that is unique to graphene.

Hot Carrier Extraction from Multilayer Graphene

Hot carriers in semiconductor or metal nanostructures are relevant, for instance, to enhance the activity of oxide-supported metal catalysts or to achieve efficient photodetection using ultrathin semiconductor layers. Moreover, rapid collection of photoexcited hot carriers can improve the efficiency of solar cells, with a theoretical maximum of 85%. Because of the long lifetime of secondary excited electrons, graphene is an especially promising two-dimensional material to harness hot carriers for solar-to-electricity conversion. However, the photoresponse of thus far realized graphene photoelectric devices is mainly governed by thermal effects, which yield only a very small photovoltage. Here, we report a Gr-TiO_x-Ti heterostructure wherein the photovoltaic effect is predominant. By doping the graphene, the open circuit voltage reaches values up to 0.30 V, 2 orders of magnitude larger than for devices relying upon the thermoelectric effect. The photocurrent turned out to be limited by trap states in the few-nanometer-thick TiO_x layer. Our findings represent a first valuable step toward the integration of graphene into third-generation solar cells based upon hot carrier extraction.

High-quality infrared imaging with graphene photodetectors at room temperature

Graphene, a two-dimensional material, is expected to enable broad-spectrum and high-speed photodetection because of its gapless band structure, ultrafast carrier dynamics and high mobility. We demonstrate a multispectral active infrared imaging by using a graphene photodetector based on hybrid response mechanisms at room temperature. The high-quality images with optical resolutions of 418 nm, 657 nm and 877 nm and close-to-theoretical-limit Michelson contrasts of 0.997, 0.994, and 0.996 have been acquired for 565 nm, 1550 nm, and 1815 nm light imaging measurements by using an unbiased graphene photodetector, respectively. Importantly, by carefully analyzing the results of Raman mapping and numerical simulations for the response process, the formation of hybrid photocurrents in graphene detectors is attributed to the synergistic action of photovoltaic and photo-thermoelectric effects. The initial application to infrared imaging will help promote the development of high performance graphene-based infrared multispectral detectors.

Slow Noncollinear Coulomb Scattering in the Vicinity of the Dirac Point in Graphene

The Coulomb scattering dynamics in graphene in energetic proximity to the Dirac point is investigated by polarization resolved pump-probe spectroscopy and microscopic theory. Collinear Coulomb scattering rapidly thermalizes the carrier distribution in k directions pointing radially away from the Dirac point. Our study reveals, however, that, in almost intrinsic graphene, full thermalization in all directions relying on noncollinear scattering is much slower. For low photon energies, carrier-optical-phonon processes are strongly suppressed and Coulomb mediated noncollinear scattering is remarkably slow, namely on a ps time scale. This effect is very promising for infrared and THz devices based on hot carrier effects.

Contacts between Two- and Three-Dimensional Materials: Ohmic, Schottky, and p-n Heterojunctions

After a decade of intensive research on two-dimensional (2D) materials inspired by the discovery of graphene, the field of 2D electronics has reached a stage with booming materials and device architectures. However, the efficient integration of 2D functional layers with three-dimensional (3D) systems remains a significant challenge, limiting device performance and circuit design. In this review, we investigate the experimental efforts in interfacing 2D layers with 3D materials and analyze the properties of the heterojunctions formed between them. The contact resistivity of metal on graphene and related 2D materials deserves special attention, while the Schottky junctions formed between metal/2D semiconductor or graphene/3D semiconductor call for careful reconsideration of the physical models describing the junction behavior. The combination of 2D and 3D semiconductors presents a form of p-n junctions that have just marked their debut. For each type of the heterojunctions, the potential applications are reviewed briefly.

Photothermoelectric Effects in Nanoporous Silicon

The first observation of the photothermoelectric effect in a nanoporous silicon (NPSi) device indicates that the photocurrent is dependent on the position of light-induced local heating from illumination at the Au-electrode/NPSi interface.