Programmable sub-nanometer sculpting of graphene with electron beams

Stability of Non-Concentric, Multilayer, and Fully Aligned Porous MoS2 Nanotubes

Nanotubes made of non-concentric and multiple small layers of porous MoS₂ contain inner pores suitable for membrane applications. In this study, molecular dynamics simulations using reactive potentials were employed to estimate the stability of the nanotubes and how their stability compares to macroscopic single- (1L) and double-layer MoS₂ flakes. The observed stability was explained in terms of several analyses that focused on the size of the area of full-covered layers, number of layers, polytype, and size of the holes in the 1L flakes. The reactive potential used in this work reproduced experimental results that have been previously reported, including the small dependency of the stability on the polytype, the formation of S-S bonds between inter- and intra-planes, and the limit of stability for two concentric rings forming a single ring-like flake.

Aligned Stacking of Nanopatterned 2D Materials for High-Resolution 3D Device Fabrication

Two-dimensional materials can be combined by placing individual layers on top of each other, so that they are bound only by their van der Waals interaction. The sequence of layers can be chosen arbitrarily, enabling an essentially atomic-level control of the material and thereby a wide choice of properties along one dimension. However, simultaneous control over the structure in the in-plane directions is so far still rather limited. Here, we combine spatially controlled modifications of 2D materials, using focused electron irradiation or electron beam induced etching, with the layer-by-layer assembly of van der Waals heterostructures. The presented assembly process makes it possible to structure each layer with an arbitrary pattern prior to the assembly into the heterostructure. Moreover, it enables a stacking of the layers with accurate lateral alignment, with an accuracy of currently 10 nm, under observation in an electron microscope. Together, this enables the fabrication of almost arbitrary 3D structures with highest spatial resolution.

In Situ Study of the Impact of Aberration-Corrected Electron-Beam Lithography on the Electronic Transport of Suspended Graphene Devices

The implementation of aberration-corrected electron beam lithography (AC-EBL) in a 200 keV scanning transmission electron microscope (STEM) is a novel technique that could be used for the fabrication of quantum devices based on 2D atomic crystals with single nanometer critical dimensions, allowing to observe more robust quantum effects. In this work we study electron beam sculpturing of nanostructures on suspended graphene field effect transistors using AC-EBL, focusing on the in situ characterization of the impact of electron beam exposure on device electronic transport quality. When AC-EBL is performed on a graphene channel (local exposure) or on the outside vicinity of a graphene channel (non-local exposure), the charge transport characteristics of graphene can be significantly affected due to charge doping and scattering. While the detrimental effect of non-local exposure can be largely removed by vigorous annealing, local-exposure induced damage is irreversible and cannot be fixed by annealing. We discuss the possible causes of the observed exposure effects. Our results provide guidance to the future development of high-energy electron beam lithography for nanomaterial device fabrication.

Spatially Controlled Fabrication and Mechanisms of Atomically Thin Nanowell Patterns in Bilayer WS2 Using in Situ High Temperature Electron Microscopy

We show controlled production of atomically thin nanowells in bilayer WS₂ using an in situ heating holder combined with a focused electron beam in a scanning transmission electron microscope (STEM). We systematically study the formation and evolvement mechanism involved in removing a single layer of WS₂ within a bilayer region with 2 nm accuracy in location and without punching through to the other layer to create a hole. Best results are found when using a high temperature of 800 °C, because it enables thermally activated atomic migration and eliminates the interference from surface carbon contamination. We demonstrate precise control over spatial distributions with 5 nm accuracy of patterning and the width of nanowells adjustable by dose-dependent parameters. The mechanism of removing a monolayer of WS₂ within a bilayer region is different than removing equivalent sections in a monolayer film due to the van der Waals interaction of the underlying remaining layer in the bilayer system that stabilizes the excess W atom stoichiometry within the edges of the nanowell structure and facilitates expansion. This study offers insights for the nanoengineering of nanowells in two-dimensional (2D) transitional metal dichalcogenides (TMDs), which could hold potential as selective traps to localize 2D reactions in molecules and ions, underpinning the broader utilization of 2D material membranes.

New Frontiers in Electron Beam-Driven Chemistry in and around Graphene

Modern aberration corrected transmission electron microscopes offer the potential for electron beam sensitive materials, such as graphene, to be examined with low energy electrons to minimize, and even avoid, damage while still affording atomic resolution, and thus providing excellent characterization. Here in this review, the exploits in which the electron beam interactions, which are often considered negative, are explored to usefully drive a wealth of chemistry in and around graphene, importantly, with no other external stimuli. After introducing the technique, this review covers carbon phase reactions between amorphous carbon, graphene, fullerenes, carbon chains, and carbon nanotubes. It then explores different studies with clusters and nanoparticles, followed by coverage of single atom and molecule interactions with graphene, and finally concludes and highlights the anticipated exciting future for electron beam driving chemistry in and around graphene.

Scalable Patterning of Encapsulated Black Phosphorus

Atomically thin black phosphorus (BP) has attracted considerable interest due to its unique properties, such as an infrared band gap that depends on the number of layers and excellent electronic transport characteristics. This material is known to be sensitive to light and oxygen and degrades in air unless protected with an encapsulation barrier, limiting its exploitation in electrical devices. We present a new scalable technique for nanopatterning few layered BP by direct electron beam exposure of encapsulated crystals, achieving a spatial resolution down to 6 nm. By encapsulating the BP with single layer graphene or hexagonal boron nitride (hBN), we show that a focused electron probe can be used to produce controllable local oxidation of BP through nanometre size defects created in the encapsulation layer by the electron impact. We have tested the approach in the scanning transmission electron microscope (STEM) and using industry standard electron beam lithography (EBL). Etched regions of the BP are stabilized by a thin passivation layer and demonstrate typical insulating behavior as measured at 300 and 4.3 K. This new scalable approach to nanopatterning of thin air sensitive crystals has the potential to facilitate their wider use for a variety of sensing and electronics applications.

Atomic structure and formation mechanism of sub-nanometer pores in 2D monolayer MoS2

We use electron-beam nanofabrication to create sub-nanometer (sub-nm) pores in 2D monolayer MoS₂ with fine control over the pore size down to 0.6 nm, corresponding to the loss of a single Mo atom and surrounding S atoms. The sub-nm pores are created in situ with 1 nm spatial precision in the MoS₂ lattice by control of the angstrom sized probe in an aberration corrected scanning transmission electron microscope with real time tracking of the pore creation. Dynamics of the sub-nm pore creation are captured at the atomic scale and reveal the mechanism of nanopore formation at accelerating voltages of 60 and 80 kV to be due to displacing a Mo atom from the lattice site onto the surface of the MoS₂. This process is enabled by the destabilization of the Mo bonding from localized electron beam induced S atom loss. DFT calculations confirm the energetic advantage of having the ejected Mo atom attach on the sheet surface rather than being expelled into vacuum, and indicate sensitivity of the nanopore potential as a function of the adsorption position of the ejected Mo atom. These results provide detailed atomic level insights into the initial process of single Mo loss that underpins the nucleation of a nanopore and explains the formation mechanism of sub-nm pores in MoS₂.

In-Situ Stretching Patterned Graphene Nanoribbons in the Transmission Electron Microscope

The mechanical response of patterned graphene nanoribbons (GNRs) with a width less than 100 nm was studied in-situ using quantitative tensile testing in a transmission electron microscope (TEM). A high degree of crystallinity was confirmed for patterned nanoribbons before and after the in-situ experiment by selected area electron diffraction (SAED) patterns. However, the maximum local true strain of the nanoribbons was determined to be only about 3%. The simultaneously recorded low-loss electron energy loss spectrum (EELS) on the stretched nanoribbons did not reveal any bandgap opening. Density Functional Based Tight Binding (DFTB) simulation was conducted to predict a feasible bandgap opening as a function of width in GNRs at low strain. The bandgap of unstrained armchair graphene nanoribbons (AGNRs) vanished for a width of about 14.75 nm, and this critical width was reduced to 11.21 nm for a strain level of 2.2%. The measured low tensile failure strain may limit the practical capability of tuning the bandgap of patterned graphene nanostructures by strain engineering, and therefore, it should be considered in bandgap design for graphene-based electronic devices by strain engineering.

Direct nanopatterning of polymer/silver nanoblocks under low energy electron beam irradiation

In this communication, we report on the growth, direct writing and nanopatterning of polymer/silver nanoblocks under low energy electron beam irradiation using a scanning electron microscope. The nanoblocks are produced by placing a droplet of an ethylene glycol solution containing silver nitrate and polyvinylpyrrolidone diluted in ethanol directly on a hot substrate heated up to 150 °C. Upon complete evaporation of the droplet, nanospheres, nano- and micro-triangles and nanoblocks made of silver-containing polymers, form over the substrate surface. Considering the nanoblocks as a model system, we demonstrate that such nanostructures are extremely sensitive to the e-beam extracted from the source of a scanning electron microscope operating at low acceleration voltages (between 5 and 7 kV). This sensitivity allows us to efficiently create various nanopatterns (e.g. arrays of holes, oblique slits and nanotrenches) in the material under e-beam irradiation. In addition to the possibility of writing, the nanoblocks revealed a self-healing ability allowing them to recover a relatively smooth surface after etching. Thanks to these properties, such nanomaterials can be used as a support for data writing and erasing on the nanoscale under low energy electron beam irradiation.

In situ conversion of nanostructures from solid to hollow in transmission electron microscopes using electron beam

With the current development of electron beam sources, the use of transmission electron microscopes is no more limited to imaging or chemical analysis but has rather been extended to nanoengineering. This includes the e-beam induced growth, etching and structural transformation of nanomaterials. In this review we summarize recent progress on the e-beam induced morphological transformation of nanostructures from solid to hollow. We provide a detailed account of the processes reported so far in the literature with a special emphasis on the mechanistic understanding of the e-beam induced hollowing of nanomaterials. Through an important number of examples, we discuss how one can achieve a precise control of such hollowing processes by understanding the fundamental mechanisms occurring at the atomic scale during the irradiation of solid nanostructures. Finally, we conclude with remarks and our own view on the prospective future directions of this research field.

Electron-beam induced synthesis of nanostructures: a review

As the success of nanostructures grows in modern society so does the importance of our ability to control their synthesis in precise manners, often with atomic precision as this can directly affect the final properties of the nanostructures. Hence it is crucial to have both deep insight, ideally with real-time temporal resolution, and precise control during the fabrication of nanomaterials. Transmission electron microscopy offers these attributes potentially providing atomic resolution with near real time temporal resolution. In addition, one can fabricate nanostructures in situ in a TEM. This can be achieved with the use of environmental electron microscopes and/or specialized specimen holders. A rather simpler and rapidly growing approach is to take advantage of the imaging electron beam as a tool for in situ reactions. This is possible because there is a wealth of electron specimen interactions, which, when implemented under controlled conditions, enable different approaches to fabricate nanostructures. Moreover, when using the electron beam to drive reactions no specialized specimen holders or peripheral equipment is required. This review is dedicated to explore the body of work available on electron-beam induced synthesis techniques with in situ capabilities. Particular emphasis is placed on the electron beam-induced synthesis of nanostructures conducted inside a TEM, viz. the e-beam is the sole (or primary) agent triggering and driving the synthesis process.

Detailed Atomic Reconstruction of Extended Line Defects in Monolayer MoS2

We study the detailed bond reconstructions that occur in S vacancies within monolayer MoS2 using a combination of aberration-corrected transmission electron microscopy, density functional theory (DFT), and multislice image simulations. Removal of a single S atom causes little perturbation to the surrounding MoS2 lattice, whereas the loss of two S atoms from the same atomic column causes a measurable local contraction. Aggregation of S vacancies into linear line defects along the zigzag direction results in larger lattice compression that is more pronounced as the length of the line defect increases. For the case of two rows of S line vacancies, we find two different types of S atom reconstructions with different amounts of lattice compression. Increasing the width of line defects leads to nanoscale regions of reconstructed MoS2 that are shown by DFT to behave as metallic channels. These results provide important insights into how defect structures could be used for creating metallic tracks within semiconducting monolayer MoS2 films for future applications in electronics and optoelectronics.

In Situ Transmission Electron Microscopy Modulation of Transport in Graphene Nanoribbons

In situ transmission electron microscopy (TEM) electronic transport measurements in nanoscale systems have been previously confined to two-electrode configurations. Here, we use the focused electron beam of a TEM to fabricate a three-electrode geometry from a continuous 2D material where the third electrode operates as side gate in a field-effect transistor configuration. Specifically, we demonstrate TEM nanosculpting of freestanding graphene sheets into graphene nanoribbons (GNRs) with proximal graphene side gates, together with in situ TEM transport measurements of the resulting GNRs, whose conductance is modulated by the side-gate potential. The TEM electron beam displaces carbon atoms from the graphene sheet, and its position is controlled with nanometer precision, allowing the fabrication of GNRs of desired width immediately prior to each transport measurement. We also model the corresponding electric field profile in this three-terminal geometry. The implementation of an in situ TEM three-terminal platform shown here further extends the use of a TEM for device characterization. This approach can be easily generalized for the investigation of other nanoscale systems (2D materials, nanowires, and single molecules) requiring the correlation of transport and atomic structure.

Bilayered graphene as a platform of nanostructures with folded edge holes

The stability and the electronic properties of new AB-stacking and moiré bilayer graphene superlattices with closed edge nanoholes are studied using DFT calculations.

Defect/oxygen assisted direct write technique for nanopatterning graphene

High resolution nanopatterning of graphene enables manipulation of electronic, optical and sensing properties of graphene. In this work we present a straightforward technique that does not require any lithographic mask to etch nanopatterns into graphene. The technique relies on the damaged graphene to be etched selectively in an oxygen rich environment with respect to non-damaged graphene. Sub-40 nm features were etched into graphene by selectively exposing it to a 100 keV electron beam and then etching the damaged areas away in a conventional oven. Raman spectroscopy was used to evaluate the extent of damage induced by the electron beam as well as the effects of the selective oxidative etching on the remaining graphene.

Space-confined creation of nanoframes in situ on reduced graphene oxide

Nanoframes (NFs) are created in situ on reduced graphene oxide (rGO) through confining the evolutions of precursor nanosheets, such as ZnS(EN)0.5 (EN = ethylenediamine), and nanoparticles within quasi-two-dimensional spaces generated from graphene oxide. The resultant composites of ZnS-NF@rGO exhibit excellent photocurrent responses. This work provides a new strategy to synthesize and modulate nanostructures and nanomaterials for rGO composites.

Science and technology roadmap for graphene, related two-dimensional crystals, and hybrid systems

We present the science and technology roadmap for graphene, related two-dimensional crystals, and hybrid systems, targeting an evolution in technology, that might lead to impacts and benefits reaching into most areas of society. This roadmap was developed within the framework of the European Graphene Flagship and outlines the main targets and research areas as best understood at the start of this ambitious project. We provide an overview of the key aspects of graphene and related materials (GRMs), ranging from fundamental research challenges to a variety of applications in a large number of sectors, highlighting the steps necessary to take GRMs from a state of raw potential to a point where they might revolutionize multiple industries. We also define an extensive list of acronyms in an effort to standardize the nomenclature in this emerging field.

Electronic transport of recrystallized freestanding graphene nanoribbons

The use of graphene and other two-dimensional materials in next-generation electronics is hampered by the significant damage caused by conventional lithographic processing techniques employed in device fabrication. To reduce the density of defects and increase mobility, Joule heating is often used since it facilitates lattice reconstruction and promotes self-repair. Despite its importance, an atomistic understanding of the structural and electronic enhancements in graphene devices enabled by current annealing is still lacking. To provide a deeper understanding of these mechanisms, atomic recrystallization and electronic transport in graphene nanoribbon (GNR) devices are investigated using a combination of experimental and theoretical methods. GNR devices with widths below 10 nm are defined and electrically measured in situ within the sample chamber of an aberration-corrected transmission electron microscope. Immediately after patterning, we observe few-layer polycrystalline GNRs with irregular sp(2)-bonded edges. Continued structural recrystallization toward a sharp, faceted edge is promoted by increasing application of Joule heat. Monte Carlo-based annealing simulations reveal that this is a result of concentrated local currents at lattice defects, which in turn promotes restructuring of unfavorable edge structures toward an atomically sharp state. We establish that intrinsic conductance doubles to 2.7 e(2)/h during the recrystallization process following an almost 3-fold reduction in device width, which is attributed to improved device crystallinity. In addition to the observation of consistent edge bonding in patterned GNRs, we further motivate the use of bonded bilayer GNRs for future nanoelectronic components by demonstrating how electronic structure can be tailored by an appropriate modification of the relative twist angle of the bonded bilayer.

Low voltage transmission electron microscopy of graphene

The initial isolation of graphene in 2004 spawned massive interest in this two-dimensional pure sp(2) carbon structure due to its incredible electrical, optical, mechanical, and thermal effects. This in turn led to the rapid development of various characterization tools for graphene. Examples include Raman spectroscopy and scanning tunneling microscopy. However, the one tool with the greatest prowess for characterizing and studying graphene is the transmission electron microscope. State-of-the-art (scanning) transmission electron microscopes enable one to image graphene with atomic resolution, and also to conduct various other characterizations simultaneously. The advent of aberration correctors was timely in that it allowed transmission electron microscopes to operate with reduced acceleration voltages, so that damage to graphene is avoided while still providing atomic resolution. In this comprehensive review, a brief introduction is provided to the technical aspects of transmission electron microscopes relevant to graphene. The reader is then introduced to different specimen preparation techniques for graphene. The different characterization approaches in both transmission electron microscopy and scanning transmission electron microscopy are then discussed, along with the different aspects of electron diffraction and electron energy loss spectroscopy. The use of graphene for other electron microscopy approaches such as in-situ investigations is also presented.

Exotic carbon nanostructures obtained through controllable defect engineering

Molecular dynamics simulations demonstrate that graphene nanoribbons with a spatially designed defect distribution can spontaneously form a large variety of stable 3D nanostructures, of controllable size and shape, on demand.

Correlating atomic structure and transport in suspended graphene nanoribbons

Graphene nanoribbons (GNRs) are promising candidates for next generation integrated circuit (IC) components; this fact motivates exploration of the relationship between crystallographic structure and transport of graphene patterned at IC-relevant length scales (<10 nm). We report on the controlled fabrication of pristine, freestanding GNRs with widths as small as 0.7 nm, paired with simultaneous lattice-resolution imaging and electrical transport characterization, all conducted within an aberration-corrected transmission electron microscope. Few-layer GNRs very frequently formed bonded-bilayers and were remarkably robust, sustaining currents in excess of 1.5 μA per carbon bond across a 5 atom-wide ribbon. We found that the intrinsic conductance of a sub-10 nm bonded bilayer GNR scaled with width as GBL(w) ≈ 3/4(e(2)/h)w, where w is the width in nanometers, while a monolayer GNR was roughly five times less conductive. Nanosculpted, crystalline monolayer GNRs exhibited armchair-terminated edges after current annealing, presenting a pathway for the controlled fabrication of semiconducting GNRs with known edge geometry. Finally, we report on simulations of quantum transport in GNRs that are in qualitative agreement with the observations.

Transforming graphene nanoribbons into nanotubes by use of point defects

Using molecular dynamics simulations with semi-empirical potentials, we demonstrate a method to fabricate carbon nanotubes (CNTs) from graphene nanoribbons (GNRs), by periodically inserting appropriate structural defects into the GNR crystal structure. We have found that various defect types initiate the bending of GNRs and eventually lead to the formation of CNTs. All kinds of carbon nanotubes (armchair, zigzag, chiral) can be produced with this method. The structural characteristics of the resulting CNTs, and the dependence on the different type and distribution of the defects, were examined. The smallest (largest) CNT obtained had a diameter of ∼ 5 Å (∼ 39 Å). Proper manipulation of ribbon edges controls the chirality of the CNTs formed. Finally, the effect of randomly distributed defects on the ability of GNRs to transform into CNTs is considered.

Stability and dynamics of the tetravacancy in graphene

The relative prevalence of various configurations of the tetravacancy defect in monolayer graphene has been examined using aberration corrected transmission electron microscopy (TEM). It was found that the two most common structures are extended linear defect structures, with the 3-fold symmetric Y-tetravacancy seldom imaged, in spite of this being a low energy state. Using density functional theory and tight-binding molecular dynamics calculations, we have determined that our TEM observations support a dynamic model of the tetravacancy under electron irradiation, with Stone-Wales bond rotations providing a mechanism for defect relaxation into lowest energy configurations. The most prevalent tetravacancy structures, while not necessarily having the lowest formation energy, are found to have a local energy minimum in the overall energy landscape for tetravacancies, explaining their relatively high occurrence.

Atomistic simulation and the mechanism of graphene amorphization under electron irradiation

Real-time reconstruction of a divacancy in graphene under electron irradiation (EI) is investigated by nonequilibrium molecular dynamic simulation (NEMD). The formation of the amorphous structure is found to be driven by the generalized Stone-Wales transformations (GSWTs), i.e. C-C bond rotations, around the defective area. The simulation reveals that each step of the reconstruction can be viewed as a quasi-thermal process and thus the reconstruction from a point defect to an amorphous structure favors the minimum energy path. On the other hand, the formation of a high energy large defective area is kinetically dominated by the balance between its expansion and shrinkage, and a kinetic model was proposed to understand the size of the defective area. The current study demonstrates that the route of the reconstruction from the point defective graphene toward an amorphous structure is predictive, though under stochastic EI.

Multiple excitation of confined graphene plasmons by single free electrons

We show that free electrons can efficiently excite plasmons in doped graphene with probabilities in the order of one per electron. More precisely, we predict multiple excitations of a single confined plasmon mode in graphene nanostructures. These unprecedentedly large electron-plasmon couplings are explained using a simple scaling law and further investigated through a general quantum description of the electron-plasmon interaction. From a fundamental viewpoint, multiple plasmon excitations by a single electron provide a unique platform for exploring the bosonic quantum nature of these collective modes. Not only does our study open a viable path toward multiple excitation of a single plasmon mode by a single electron, but it also reveals electron probes as ideal tools for producing, detecting, and manipulating plasmons in graphene nanostructures.

Direct writing on graphene 'paper' by manipulating electrons as 'invisible ink'

The combination of self-assembly (bottom up) and nano-imprint lithography (top down) is an efficient and effective way to record information at the nanoscale by writing. The use of an electron beam for writing is quite a promising strategy; however, the 'paper' on which to save the information is not yet fully realized. Herein, graphene was selected as the thinnest paper for recording information at the nanoscale. In a transmission electron microscope, in situ high precision writing and drawing were achieved on graphene nanosheets by manipulating electrons with a 1 nm probe (probe current ~2 × 10(-9) A m(-2)) in scanning transmission electron microscopy (STEM) mode. Under electron probe irradiation, the carbon atom tends to displace within a crystalline specimen, and dangling bonds are formed from the original sp(2) bonding after local carbon atoms have been kicked off. The absorbed random foreign amorphous carbon assembles along the line of the scanning direction induced by secondary electrons and is immobilized near the edge. With the ultralow secondary electron yield of the graphene, additional foreign atoms determining the accuracy of the pattern have been greatly reduced near the targeting region. Therefore, the electron probe in STEM mode serves as invisible ink for nanoscale writing and drawing. These results not only shed new light on the application of graphene by the interaction of different forms of carbon, but also illuminate the interaction of different carbon forms through electron beams.

Atomic resolution imaging of graphene by transmission electron microscopy

The atomic structure of a material influences its electronic, chemical, magnetic and mechanical properties. Characterising carbon nanomaterials, such as fullerenes, nanotubes and graphene, at the atomic level is challenging due to their chemical reactivity and low atomic mass. Transmission electron microscopy and scanning probe microscopy are two of the leading methods for imaging graphene at the atomic level. Here, we report on recent advances in atomic resolution imaging of graphene using aberration-corrected high resolution transmission electron microscopy and how it has revealed many of the structural deviations from the pristine monolayer form. Structures in graphene such as vacancy defects, edges, grain boundaries, linear chains, impurity dopants, layer number, layer stacking and bond rotations are explored.

Optical field enhancement by strong plasmon interaction in graphene nanostructures

The ability of plasmons to enhance the electromagnetic field intensity in the gap between metallic nanoparticles derives from their strong optical confinement relative to the light wavelength. The spatial extension of plasmons in doped graphene has recently been shown to be boldly reduced with respect to conventional plasmonic metals. Here, we show that graphene nanostructures are capable of capitalizing such strong confinement to yield unprecedented levels of field enhancement, well beyond what is found in noble metals of similar dimensions (~ tens of nanometers). We perform realistic, quantum-mechanical calculations of the optical response of graphene dimers formed by nanodisks and nanotriangles, showing a strong sensitivity of the level of enhancement to the type of carbon edges near the gap region, with armchair edges favoring stronger interactions than zigzag edges. Our quantum-mechanical description automatically incorporates nonlocal effects that are absent in classical electromagnetic theory, leading to over an order of magnitude higher enhancement in armchair structures. The classical limit is recovered for large structures. We predict giant levels of light concentration for dimers ~200 nm, leading to infrared-absorption enhancement factors ~10(8). This extreme light enhancement and confinement in nanostructured graphene has great potential for optical sensing and nonlinear devices.