1
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Fan Y, Shi T, Zhang J, Shore KA. Optical injection effects in electrically pumped semiconductor nano-laser arrays. OPTICS EXPRESS 2024; 32:19361-19371. [PMID: 38859072 DOI: 10.1364/oe.525981] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/11/2024] [Accepted: 05/05/2024] [Indexed: 06/12/2024]
Abstract
A theoretical analysis is performed on the response of electrically pumped nano-laser arrays to external optical injection. The response to both continuous wave and modulated optical injection is explored. Continuous wave injection is shown to excite several varieties of dynamical behaviour in the array elements including regular dynamics and quasi-periodic behaviour. The strength of the optical injection, the frequency detuning between the injected light and the target laser, and the magnitude of the Purcell spontaneous emission enhancement factor are shown to markedly affect the dynamics. When subject to modulated optical injection, the effects of frequency detuning and optical injection strength are the focus of attention. It is shown that the elements of the array subject to modulated optical injection exhibit oscillatory behaviour over broad regimes determined by the optical injection strength and the frequency detuning.
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2
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Yu H, Wang R, Memon MH, Luo Y, Xiao S, Fu L, Sun H. Highly Responsive Switchable Broadband DUV-NIR Photodetector and Tunable Emitter Enabled by Uniform and Vertically Grown III-V Nanowire on Silicon Substrate for Integrated Photonics. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2024; 20:e2307458. [PMID: 38145355 DOI: 10.1002/smll.202307458] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/27/2023] [Revised: 10/13/2023] [Indexed: 12/26/2023]
Abstract
Low-dimensional semiconductor nanostructures, particularly in the form of nanowire configurations with large surface-to-volume-ratio, offer intriguing optoelectronic properties for the advancement of integrated photonic technologies. Here, a bias-controlled, superior dual-functional broadband light detecting/emitting diode enabled by constructing the aluminum-gallium-nitride-based nanowire on the silicon-platform is reported. Strikingly, the diode exhibits a stable and high responsivity (R) of over 200 mAW-1 covering an extremely wide operation band under reverse bias conditions, ranging from deep ultraviolet (DUV: 254 nm) to near-infrared (NIR: 1000 nm) spectrum region. While at zero bias, it still possesses superior DUV light selectivity with a high off-rejection ratio of 106. When it comes to the operation of the light-emitting mode under forward bias, it can achieve large spectral changes from UV to red simply by coating colloid quantum dots on the nanowires. Based on the multifunctional features of the diodes, this study further employs them in various optoelectronic systems, demonstrating outstanding applications in multicolor imaging, filterless color discrimination, and DUV/NIR visualization. Such highly responsive broadband photodetector with a tunable emitter enabled by III-V nanowire on silicon provides a new avenue toward the realization of integrated photonics and holds great promise for future applications in communication, sensing, imaging, and visualization.
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Affiliation(s)
- Huabin Yu
- iGaN Laboratory, School of Microelectronics, University of Science and Technology of China, Hefei, Anhui, 230026, China
| | - Rui Wang
- iGaN Laboratory, School of Microelectronics, University of Science and Technology of China, Hefei, Anhui, 230026, China
| | - Muhammad Hunain Memon
- iGaN Laboratory, School of Microelectronics, University of Science and Technology of China, Hefei, Anhui, 230026, China
| | - Yuanmin Luo
- iGaN Laboratory, School of Microelectronics, University of Science and Technology of China, Hefei, Anhui, 230026, China
| | - Shudan Xiao
- iGaN Laboratory, School of Microelectronics, University of Science and Technology of China, Hefei, Anhui, 230026, China
| | - Lan Fu
- Research School of Physics, The Australian National University, Canberra, ACT, 2600, Australia
| | - Haiding Sun
- iGaN Laboratory, School of Microelectronics, University of Science and Technology of China, Hefei, Anhui, 230026, China
- Key Laboratory of Wireless-Optical Communications Chinese Academy of Sciences, Hefei, 230027, China
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3
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Kim Y, Assali S, Joo HJ, Koelling S, Chen M, Luo L, Shi X, Burt D, Ikonic Z, Nam D, Moutanabbir O. Short-wave infrared cavity resonances in a single GeSn nanowire. Nat Commun 2023; 14:4393. [PMID: 37474549 PMCID: PMC10359335 DOI: 10.1038/s41467-023-40140-0] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 08/09/2022] [Accepted: 07/03/2023] [Indexed: 07/22/2023] Open
Abstract
Nanowires are promising platforms for realizing ultra-compact light sources for photonic integrated circuits. In contrast to impressive progress on light confinement and stimulated emission in III-V and II-VI semiconductor nanowires, there has been no experimental demonstration showing the potential to achieve strong cavity effects in a bottom-up grown single group-IV nanowire, which is a prerequisite for realizing silicon-compatible infrared nanolasers. Herein, we address this limitation and present an experimental observation of cavity-enhanced strong photoluminescence from a single Ge/GeSn core/shell nanowire. A sufficiently large Sn content ( ~ 10 at%) in the GeSn shell leads to a direct bandgap gain medium, allowing a strong reduction in material loss upon optical pumping. Efficient optical confinement in a single nanowire enables many round trips of emitted photons between two facets of a nanowire, achieving a narrow width of 3.3 nm. Our demonstration opens new possibilities for ultrasmall on-chip light sources towards realizing photonic-integrated circuits in the underexplored range of short-wave infrared (SWIR).
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Affiliation(s)
- Youngmin Kim
- School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore, 639798, Singapore
| | - Simone Assali
- Department of Engineering Physics, École Polytechnique de Montréal, C.P. 6079, Succ. Centre-Ville, Montréal, QC, H3C 3A7, Canada
| | - Hyo-Jun Joo
- School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore, 639798, Singapore
| | - Sebastian Koelling
- Department of Engineering Physics, École Polytechnique de Montréal, C.P. 6079, Succ. Centre-Ville, Montréal, QC, H3C 3A7, Canada
| | - Melvina Chen
- School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore, 639798, Singapore
| | - Lu Luo
- Department of Engineering Physics, École Polytechnique de Montréal, C.P. 6079, Succ. Centre-Ville, Montréal, QC, H3C 3A7, Canada
| | - Xuncheng Shi
- School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore, 639798, Singapore
| | - Daniel Burt
- School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore, 639798, Singapore
| | - Zoran Ikonic
- School of Electronic and Electrical Engineering, University of Leeds, Leeds, LS2 9JT, UK
| | - Donguk Nam
- School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore, 639798, Singapore.
| | - Oussama Moutanabbir
- Department of Engineering Physics, École Polytechnique de Montréal, C.P. 6079, Succ. Centre-Ville, Montréal, QC, H3C 3A7, Canada.
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4
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Vafadar MF, Zhao S. Ultralow threshold surface emitting ultraviolet lasers with semiconductor nanowires. Sci Rep 2023; 13:6633. [PMID: 37095158 PMCID: PMC10126006 DOI: 10.1038/s41598-023-33457-9] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/09/2023] [Accepted: 04/13/2023] [Indexed: 04/26/2023] Open
Abstract
Surface-emitting (SE) semiconductor lasers have changed our everyday life in various ways such as communication and sensing. Expanding the operation wavelength of SE semiconductor lasers to shorter ultraviolet (UV) wavelength range further broadens the applications to disinfection, medical diagnostics, phototherapy, and so on. Nonetheless, realizing SE lasers in the UV range has remained to be a challenge. Despite of the recent breakthrough in UV SE lasers with aluminum gallium nitride (AlGaN), the electrically injected AlGaN nanowire UV lasers are based on random optical cavities, whereas AlGaN UV vertical-cavity SE lasers (VCSELs) are all through optical pumping and are all with large lasing threshold power densities in the range of several hundred kW/cm2 to MW/cm2. Herein, we report ultralow threshold, SE lasing in the UV spectral range with GaN-based epitaxial nanowire photonic crystals. Lasing at 367 nm is measured, with a threshold of only around 7 kW/cm2 (~ 49 μJ/cm2), a factor of 100× reduction compared to the previously reported conventional AlGaN UV VCSELs at similar lasing wavelengths. This is also the first achievement of nanowire photonic crystal SE lasers in the UV range. Further given the excellent electrical doping that has already been established in III-nitride nanowires, this work offers a viable path for the development of the long-sought-after semiconductor UV SE lasers.
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Affiliation(s)
- Mohammad Fazel Vafadar
- Department of Electrical and Computer Engineering, McGill University, 3480 University Street, Montreal, QC, H3A 0E9, Canada
| | - Songrui Zhao
- Department of Electrical and Computer Engineering, McGill University, 3480 University Street, Montreal, QC, H3A 0E9, Canada.
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5
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Cameron D, Coulon PM, Fairclough S, Kusch G, Edwards PR, Susilo N, Wernicke T, Kneissl M, Oliver RA, Shields PA, Martin RW. Core-Shell Nanorods as Ultraviolet Light-Emitting Diodes. NANO LETTERS 2023; 23:1451-1458. [PMID: 36748796 PMCID: PMC9951243 DOI: 10.1021/acs.nanolett.2c04826] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 12/08/2022] [Revised: 01/31/2023] [Indexed: 06/18/2023]
Abstract
Existing barriers to efficient deep ultraviolet (UV) light-emitting diodes (LEDs) may be reduced or overcome by moving away from conventional planar growth and toward three-dimensional nanostructuring. Nanorods have the potential for enhanced doping, reduced dislocation densities, improved light extraction efficiency, and quantum wells free from the quantum-confined Stark effect. Here, we demonstrate a hybrid top-down/bottom-up approach to creating highly uniform AlGaN core-shell nanorods on sapphire repeatable on wafer scales. Our GaN-free design avoids self-absorption of the quantum well emission while preserving electrical functionality. The effective junctions formed by doping of both the n-type cores and p-type caps were studied using nanoprobing experiments, where we find low turn-on voltages, strongly rectifying behaviors and significant electron-beam-induced currents. Time-resolved cathodoluminescence measurements find short carrier liftetimes consistent with reduced polarization fields. Our results show nanostructuring to be a promising route to deep-UV-emitting LEDs, achievable using commercially compatible methods.
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Affiliation(s)
- Douglas Cameron
- Department
of Physics, Scottish Universities Physics Alliance (SUPA), University of Strathclyde, Glasgow G4 0NG, United Kingdom
| | - Pierre-Marie Coulon
- Department
of Electrical & Electronic Engineering, University of Bath, Bath BA2 7AY, United Kingdom
- Centre
de Recherche sur l’Hétéro-Epitaxie et ses Applications
(CRHEA)−Centre National de la Recherche Scientifique (CNRS), Rue Bernard Grégory, 06560 Valbonne, France
| | - Simon Fairclough
- Department
of Materials Science and Metallurgy, University
of Cambridge, CB3 OFS Cambridge, United Kingdom
| | - Gunnar Kusch
- Department
of Materials Science and Metallurgy, University
of Cambridge, CB3 OFS Cambridge, United Kingdom
| | - Paul R. Edwards
- Department
of Physics, Scottish Universities Physics Alliance (SUPA), University of Strathclyde, Glasgow G4 0NG, United Kingdom
| | - Norman Susilo
- Institute
of Solid State Physics, Technische Universität
Berlin, Hardenbergstraße 36, 10623 Berlin, Germany
| | - Tim Wernicke
- Institute
of Solid State Physics, Technische Universität
Berlin, Hardenbergstraße 36, 10623 Berlin, Germany
| | - Michael Kneissl
- Institute
of Solid State Physics, Technische Universität
Berlin, Hardenbergstraße 36, 10623 Berlin, Germany
| | - Rachel A. Oliver
- Department
of Materials Science and Metallurgy, University
of Cambridge, CB3 OFS Cambridge, United Kingdom
| | - Philip A. Shields
- Department
of Electrical & Electronic Engineering, University of Bath, Bath BA2 7AY, United Kingdom
| | - Robert W. Martin
- Department
of Physics, Scottish Universities Physics Alliance (SUPA), University of Strathclyde, Glasgow G4 0NG, United Kingdom
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6
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Ali M, Haque AKMN, Sadik N, Ahmed T, Baten MZ. Predicting strongly localized resonant modes of light in disordered arrays of dielectric scatterers: a machine learning approach. OPTICS EXPRESS 2023; 31:826-842. [PMID: 36785131 DOI: 10.1364/oe.475495] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/13/2022] [Accepted: 11/27/2022] [Indexed: 06/18/2023]
Abstract
In this work, we predict the most strongly confined resonant mode of light in strongly disordered systems of dielectric scatterers employing the data-driven approach of machine learning. For training, validation, and test purposes of the proposed regression architecture-based deep neural network (DNN), a dataset containing resonant characteristics of light in 8,400 random arrays of dielectric scatterers is generated employing finite difference time domain (FDTD) analysis technique. To enhance the convergence and accuracy of the overall model, an auto-encoder is utilized as the weight initializer of the regression model, which contains three convolutional layers and three fully connected layers. Given the refractive index profile of the disordered system, the trained model can instantaneously predict the Anderson localized resonant wavelength of light with a minimum error of 0.0037%. A correlation coefficient of 0.95 or higher is obtained between the FDTD simulation results and DNN predictions. Such a high level of accuracy is maintained in inhomogeneous disordered media containing Gaussian distribution of diameter of the scattering particles. Moreover, the prediction scheme is found to be robust against any combination of diameters and fill factors of the disordered medium. The proposed model thereby leverages the benefits of machine learning for predicting the complex behavior of light in strongly disordered systems.
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7
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Wang D, Wu W, Fang S, Kang Y, Wang X, Hu W, Yu H, Zhang H, Liu X, Luo Y, He JH, Fu L, Long S, Liu S, Sun H. Observation of polarity-switchable photoconductivity in III-nitride/MoS x core-shell nanowires. LIGHT, SCIENCE & APPLICATIONS 2022; 11:227. [PMID: 35853856 PMCID: PMC9296537 DOI: 10.1038/s41377-022-00912-7] [Citation(s) in RCA: 6] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/26/2022] [Revised: 06/20/2022] [Accepted: 06/23/2022] [Indexed: 05/13/2023]
Abstract
III-V semiconductor nanowires are indispensable building blocks for nanoscale electronic and optoelectronic devices. However, solely relying on their intrinsic physical and material properties sometimes limits device functionalities to meet the increasing demands in versatile and complex electronic world. By leveraging the distinctive nature of the one-dimensional geometry and large surface-to-volume ratio of the nanowires, new properties can be attained through monolithic integration of conventional nanowires with other easy-synthesized functional materials. Herein, we combine high-crystal-quality III-nitride nanowires with amorphous molybdenum sulfides (a-MoSx) to construct III-nitride/a-MoSx core-shell nanostructures. Upon light illumination, such nanostructures exhibit striking spectrally distinctive photodetection characteristic in photoelectrochemical environment, demonstrating a negative photoresponsivity of -100.42 mA W-1 under 254 nm illumination, and a positive photoresponsivity of 29.5 mA W-1 under 365 nm illumination. Density functional theory calculations reveal that the successful surface modification of the nanowires via a-MoSx decoration accelerates the reaction process at the electrolyte/nanowire interface, leading to the generation of opposite photocurrent signals under different photon illumination. Most importantly, such polarity-switchable photoconductivity can be further tuned for multiple wavelength bands photodetection by simply adjusting the surrounding environment and/or tailoring the nanowire composition, showing great promise to build light-wavelength controllable sensing devices in the future.
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Affiliation(s)
- Danhao Wang
- School of Microelectronics, University of Science and Technology of China, Hefei, 230029, China
| | - Wentiao Wu
- Hefei National Laboratory for Physical Sciences at the Microscale, Department of Chemical Physics, University of Science and Technology of China, Hefei, 230029, China
| | - Shi Fang
- School of Microelectronics, University of Science and Technology of China, Hefei, 230029, China
| | - Yang Kang
- School of Microelectronics, University of Science and Technology of China, Hefei, 230029, China
| | - Xiaoning Wang
- Hefei National Laboratory for Physical Sciences at the Microscale, Department of Chemical Physics, University of Science and Technology of China, Hefei, 230029, China
| | - Wei Hu
- Hefei National Laboratory for Physical Sciences at the Microscale, Department of Chemical Physics, University of Science and Technology of China, Hefei, 230029, China.
| | - Huabin Yu
- School of Microelectronics, University of Science and Technology of China, Hefei, 230029, China
| | - Haochen Zhang
- School of Microelectronics, University of Science and Technology of China, Hefei, 230029, China
| | - Xin Liu
- School of Microelectronics, University of Science and Technology of China, Hefei, 230029, China
| | - Yuanmin Luo
- School of Microelectronics, University of Science and Technology of China, Hefei, 230029, China
| | - Jr-Hau He
- Department of Materials Science and Engineering, City University of Hong Kong, Kowloon, Hong Kong SAR, 999077, China
| | - Lan Fu
- School of Microelectronics, University of Science and Technology of China, Hefei, 230029, China
- Department of Electronic Materials Engineering, Research School of Physics and Engineering, The Australian National University, Canberra, ACT, 2601, Australia
| | - Shibing Long
- School of Microelectronics, University of Science and Technology of China, Hefei, 230029, China
| | - Sheng Liu
- School of Microelectronics, Wuhan University, Wuhan, 430072, China.
| | - Haiding Sun
- School of Microelectronics, University of Science and Technology of China, Hefei, 230029, China.
- The CAS Key Laboratory of Wireless-Optical Communications, University of Science and Technology of China, Hefei, 230029, China.
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8
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Zhou X, Jiang M, Xu K, Liu M, Sha S, Cao S, Kan C, Shi DN. Electrically driven single microwire-based single-mode microlaser. LIGHT, SCIENCE & APPLICATIONS 2022; 11:198. [PMID: 35764618 PMCID: PMC9240044 DOI: 10.1038/s41377-022-00874-w] [Citation(s) in RCA: 2] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 02/18/2022] [Revised: 06/05/2022] [Accepted: 06/07/2022] [Indexed: 06/15/2023]
Abstract
Engineering the lasing-mode oscillations effectively within a laser cavity is a relatively updated attentive study and perplexing issue in the field of laser physics and applications. Herein, we report a realization of electrically driven single-mode microlaser, which is composed of gallium incorporated zinc oxide microwire (ZnO:Ga MW) with platinum nanoparticles (PtNPs, d ~ 130 nm) covering, a magnesium oxide (MgO) nanofilm, a Pt nanofilm, and a p-type GaN substrate. The laser cavity modes could resonate following the whispering-gallery mode (WGM) among the six side surfaces by total internal reflection, and the single-mode lasing wavelength is centered at 390.5 nm with a linewidth of about 0.18 nm. The cavity quality factor Q is evaluated to about 2169. In the laser structure, the usage of Pt and MgO buffer layers can be utilized to engineer the band alignment of ZnO:Ga/GaN heterojunction, optimize the p-n junction quality and increase the current injection. Thus, the well-designed device structure can seamlessly unite the electron-hole recombination region, the gain medium, and optical microresonator into the PtNPs@ZnO:Ga wire perfectly. Such a single MW microlaser is essentially single-mode regardless of the gain spectral bandwidth. To study the single-mode operation, PtNPs working as superabsorber can engineering the multimode lasing actions of ZnO:Ga MWs even if their dimensions are typically much larger than that of lasing wavelength. Our findings can provide a straightforward and effective scheme to develop single-mode microlaser devices based on one-dimensional wire semiconductors.
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Affiliation(s)
- Xiangbo Zhou
- College of Physics, MIIT Key Laboratory of Aerospace Information Materials and Physics, Key Laboratory for Intelligent Nano Materials and Devices, Nanjing University of Aeronautics and Astronautics, No. 29 Jiangjun Road, Nanjing, 211106, China
| | - Mingming Jiang
- College of Physics, MIIT Key Laboratory of Aerospace Information Materials and Physics, Key Laboratory for Intelligent Nano Materials and Devices, Nanjing University of Aeronautics and Astronautics, No. 29 Jiangjun Road, Nanjing, 211106, China.
| | - Kai Xu
- College of Physics, MIIT Key Laboratory of Aerospace Information Materials and Physics, Key Laboratory for Intelligent Nano Materials and Devices, Nanjing University of Aeronautics and Astronautics, No. 29 Jiangjun Road, Nanjing, 211106, China
| | - Maosheng Liu
- College of Physics, MIIT Key Laboratory of Aerospace Information Materials and Physics, Key Laboratory for Intelligent Nano Materials and Devices, Nanjing University of Aeronautics and Astronautics, No. 29 Jiangjun Road, Nanjing, 211106, China
| | - Shulin Sha
- College of Physics, MIIT Key Laboratory of Aerospace Information Materials and Physics, Key Laboratory for Intelligent Nano Materials and Devices, Nanjing University of Aeronautics and Astronautics, No. 29 Jiangjun Road, Nanjing, 211106, China
| | - Shuiyan Cao
- College of Physics, MIIT Key Laboratory of Aerospace Information Materials and Physics, Key Laboratory for Intelligent Nano Materials and Devices, Nanjing University of Aeronautics and Astronautics, No. 29 Jiangjun Road, Nanjing, 211106, China
| | - Caixia Kan
- College of Physics, MIIT Key Laboratory of Aerospace Information Materials and Physics, Key Laboratory for Intelligent Nano Materials and Devices, Nanjing University of Aeronautics and Astronautics, No. 29 Jiangjun Road, Nanjing, 211106, China.
| | - Da Ning Shi
- College of Physics, MIIT Key Laboratory of Aerospace Information Materials and Physics, Key Laboratory for Intelligent Nano Materials and Devices, Nanjing University of Aeronautics and Astronautics, No. 29 Jiangjun Road, Nanjing, 211106, China.
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9
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Sarkar R, Bhunia S, Jana D, Nag D, Chatterjee S, Laha A. Growth of uniform Mg-doped p-AlGaN nanowires using plasma-assisted molecular beam epitaxy technique for UV-A emitters. NANOTECHNOLOGY 2022; 33:384001. [PMID: 35636220 DOI: 10.1088/1361-6528/ac7472] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/09/2021] [Accepted: 05/30/2022] [Indexed: 06/15/2023]
Abstract
In this manuscript, we have shown the growth and extensive structural and optical characteristic of the uniformly Mg-doped Al0.23Ga0.77N (UV-A region,λ∼ 323 nm) nanowire. The Kelvin probe force microscopy was employed to determine the profile of holes in p-type AlGaN nanowires by measuring the work function changes induced by Mg incorporation. The influence of surface band bending on doping concentration has thoroughly been discussed. Our experiment confirms the homogeneous incorporation of Mg throughout the nanowire without any top surface Mg segregation. In this work, we have also demonstrated a comprehensive analysis of acceptor states induced thermal quenching behaviour in the optical transition of Mg-doped AlGaN nanowire. We propose a phenomenological model, based on the rate equation which confirms that achieving higher 'hole' (p-doping) concentration in AlGaN nanowire (>1018cm-3) is more conducive than the planar counterpart if the growth of NWs is carried out at optimized process conditions. This rate equation-based model has also demonstrated the influence of sidewall surface passivation in those AlGaN nanowires.
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Affiliation(s)
- Ritam Sarkar
- Department of Electrical Engineering, Indian Institute of Technology Bombay, Mumbai-400076, India
| | - Swagata Bhunia
- Department of Physics, Indian Institute of Technology Bombay, Mumbai-400076, India
| | - Dipankar Jana
- Department of Condensed Matter Physics and Materials Science, Tata Institute of Fundamental Research, Homi Bhabha Road, Mumbai 400005, India
| | - Dhiman Nag
- Department of Electrical Engineering, Indian Institute of Technology Bombay, Mumbai-400076, India
| | - Soumyadip Chatterjee
- Department of Electrical Engineering, Indian Institute of Technology Bombay, Mumbai-400076, India
| | - Apurba Laha
- Department of Electrical Engineering, Indian Institute of Technology Bombay, Mumbai-400076, India
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10
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Zhou X, Jiang M, Wu J, Liu M, Kan C, Shi D. Electrically driven whispering-gallery-mode microlasers in an n-MgO@ZnO:Ga microwire/p-GaN heterojunction. OPTICS EXPRESS 2022; 30:18273-18286. [PMID: 36221632 DOI: 10.1364/oe.457575] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/07/2022] [Accepted: 04/22/2022] [Indexed: 06/16/2023]
Abstract
In emerging miniaturized applications, semiconductor micro/nanostructures laser devices have drawn great public attentions of late years. The device performances of micro/nanostructured microlasers are highly restricted to the different reflective conditions at various side surfaces of microresonators and junction interface quality. In this study, an electrically driven whispering-gallery-mode (WGM) microlaser composed of a Ga-doped ZnO microwire covered by a MgO layer (MgO@ZnO:Ga MW) and a p-type GaN substrate is illustrated experimentally. Incorporating a MgO layer on the side surfaces of ZnO:Ga MWs can be used to reduce light leakage along the sharp edges and the ZnO:Ga/GaN interface. This buffer layer incorporation also enables engineering the energy band alignment of n-ZnO:Ga/p-GaN heterojunction and manipulating the current transport properties. The as-constructed n-MgO@ZnO:Ga MW/p-GaN heterojunction device can emit at an ultraviolet wavelength of 375.5 nm and a linewidth of about 25.5 nm, achieving the excitonic-related recombination in the ZnO:Ga MW. The broadband spectrum collapsed into a series of sharp peaks upon continuous-wave (CW) operation of electrical pumping, especially for operating current above 15.2 mA. The dominant emission line was centered at 378.5 nm, and the line width narrowed to approximately 0.95 nm. These sharp peaks emerged from the spontaneous emission spectrum and had an average spacing of approximately 5.5 nm, following the WGM cavity modes. The results highlight the significance of interfacial engineering for optimizing the performance of low-dimensional heterostructured devices and shed light on developing future miniaturized microlasers.
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11
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Jin L, Chen X, Wu Y, Ai X, Yang X, Xiao S, Song Q. Dual-wavelength switchable single-mode lasing from a lanthanide-doped resonator. Nat Commun 2022; 13:1727. [PMID: 35365646 PMCID: PMC8975839 DOI: 10.1038/s41467-022-29435-w] [Citation(s) in RCA: 4] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 04/13/2021] [Accepted: 03/14/2022] [Indexed: 11/09/2022] Open
Abstract
The development of multi-wavelength lasing, particularly with the wavelength tuning in a wide spectral range, is challenging but highly desirable for integrated photonic devices due to its dynamic switching functionality, high spectral purity and contrast. Here, we propose a general strategy, that relies on the simultaneous design on the electronic states and the optical states, to demonstrate dynamically switchable single-mode lasing spanning beyond the record range (300 nm). This is achieved through integrating the reversely designed nanocrystals with two size-mismatched coupled microcavities. We show an experimental validation of a crosstalk-free violet-to-red single-mode behavior through collective control of asymmetric excitation and excitation wavelength. The single-mode action persists for a wide power range, and presents significant enhancement when compared with that in the microdisk laser. These findings enlighten the reverse design of luminescent materials. Given the remarkable doping flexibility, our results may create new opportunities in a variety of frontier applications.
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Affiliation(s)
- Limin Jin
- Ministry of Industry and Information Technology Key Lab of Micro-Nano Optoelectronic Information System, Harbin Institute of Technology, Shenzhen, 518055, P. R. China.
| | - Xian Chen
- College of Materials Science of Engineering, Shenzhen University, Shenzhen, 518060, P. R. China.
| | - Yunkai Wu
- Ministry of Industry and Information Technology Key Lab of Micro-Nano Optoelectronic Information System, Harbin Institute of Technology, Shenzhen, 518055, P. R. China
| | - Xiangzhe Ai
- College of Materials Science of Engineering, Shenzhen University, Shenzhen, 518060, P. R. China
| | - Xiaoli Yang
- Ministry of Industry and Information Technology Key Lab of Micro-Nano Optoelectronic Information System, Harbin Institute of Technology, Shenzhen, 518055, P. R. China
| | - Shumin Xiao
- Ministry of Industry and Information Technology Key Lab of Micro-Nano Optoelectronic Information System, Harbin Institute of Technology, Shenzhen, 518055, P. R. China. .,Collaborative Innovation Center of Extreme Optics, Shanxi University, Taiyuan, 030006, Shanxi, P. R. China. .,Pengcheng Laboratory, Shenzhen, 518055, P. R. China.
| | - Qinghai Song
- Ministry of Industry and Information Technology Key Lab of Micro-Nano Optoelectronic Information System, Harbin Institute of Technology, Shenzhen, 518055, P. R. China. .,Collaborative Innovation Center of Extreme Optics, Shanxi University, Taiyuan, 030006, Shanxi, P. R. China. .,Pengcheng Laboratory, Shenzhen, 518055, P. R. China.
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12
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Mid-infrared photon sensing using InGaN/GaN nanodisks via intersubband absorption. Sci Rep 2022; 12:4301. [PMID: 35277566 PMCID: PMC8917152 DOI: 10.1038/s41598-022-08323-9] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 10/15/2021] [Accepted: 03/03/2022] [Indexed: 12/03/2022] Open
Abstract
Intersubband (intraband) transitions allow absorption of photons in the infrared spectral regime, which is essential for IR-photodetector and optical communication applications. Among various technologies, nanodisks embedded in nanowires offer a unique opportunity to be utilized in intraband devices due to the ease of tuning the fundamental parameters such as strain distribution, band energy, and confinement of the active region. Here, we show the transverse electric polarized intraband absorption using InGaN/GaN nanodisks cladded by AlGaN. Fourier transform infrared reflection (FTIR) measurement confirms absorption of normal incident in-plane transverse electric polarized photons in the mid-IR regime (wavelength of ~ 15 μm) at room temperature. The momentum matrix of the nanodisk energy states indicates electron transition from the ground state s into the px or py orbital-like excited states. Furthermore, the absorption characteristics depending on the indium composition and nanowire diameter exhibits tunability of the intraband absorption spectra within the nanodisks. We believe nanodisks embedded nanowires is a promising technology for achieving tunable detection of photons in the IR spectrum.
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13
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Li Z, Li L, Wang F, Xu L, Gao Q, Alabadla A, Peng K, Vora K, Hattori HT, Tan HH, Jagadish C, Fu L. Investigation of light-matter interaction in single vertical nanowires in ordered nanowire arrays. NANOSCALE 2022; 14:3527-3536. [PMID: 35171176 DOI: 10.1039/d1nr08088a] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
Quasi one-dimensional semiconductor nanowires (NWs) in either arrays or single free-standing forms have shown unique optical properties (i.e., light absorption and emission) differently from their thin film or bulk counterparts, presenting new opportunities for achieving enhanced performance and/or functionalities for optoelectronic device applications. However, there is still a lack of understanding of the absorption properties of vertically standing single NWs within an array environment with light coupling from neighboring NWs within certain distances, due to the challenges in fabrication of such devices. In this article, we present a new approach to fabricate single vertically standing NW photodetectors from ordered InP NW arrays using the focused ion beam technique, to allow direct measurements of optical and electrical properties of single NWs standing in an array. The light-matter interaction and photodetector performance are investigated using both experimental and theoretical methods. The consistent photocurrent and simulated absorption mapping results reveal that the light absorption and thus photoresponse of single NWs are strongly affected by the NW array geometry and related light coupling from their surrounding dielectric environment, due to the large absorption cross section and/or strong light interaction. While the highest light concentration factor (∼19.64) was obtained from the NW in an array with a pitch of 1.5 μm, the higher responsivity per unit cell (equivalent to NW array responsivity) of a single vertical NW photodetector was achieved in an array with a pitch of 0.8 μm, highlighting the importance of array design for practical applications. The insight from our study can provide important guidance to evaluate and optimize the device design of NW arrays for a wide range of optoelectronic device applications.
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Affiliation(s)
- Ziyuan Li
- Department of Electronic Materials Engineering, Research School of Physics, The Australian National University, Canberra, ACT 2601, Australia.
| | - Li Li
- Australian National Fabrication Facility, Research School of Physics, The Australian National University, Canberra, ACT 2601, Australia
| | - Fan Wang
- School of Electrical and Data Engineering, Faculty of Engineering and Information Technology, University of Technology Sydney, Ultimo, NSW 2007, Australia
| | - Lei Xu
- Advanced Optics and Photonics Laboratory, Department of Engineering, School of Science & Technology, Nottingham Trent University, Nottingham, NG1 4FQ, United Kingdom
| | - Qian Gao
- Department of Electronic Materials Engineering, Research School of Physics, The Australian National University, Canberra, ACT 2601, Australia.
| | - Ahmed Alabadla
- Department of Electronic Materials Engineering, Research School of Physics, The Australian National University, Canberra, ACT 2601, Australia.
| | - Kun Peng
- Department of Electronic Materials Engineering, Research School of Physics, The Australian National University, Canberra, ACT 2601, Australia.
| | - Kaushal Vora
- Australian National Fabrication Facility, Research School of Physics, The Australian National University, Canberra, ACT 2601, Australia
| | - Haroldo T Hattori
- School of Engineering and Information Technology, University of New South Wales, Canberra, ACT 2610, Australia
| | - Hark Hoe Tan
- Department of Electronic Materials Engineering, Research School of Physics, The Australian National University, Canberra, ACT 2601, Australia.
- Australian Research Council Centre of Excellence for Transformative Meta-Optical Systems, Research School of Physics, The Australian National University, Canberra, ACT 2601, Australia
| | - Chennupati Jagadish
- Department of Electronic Materials Engineering, Research School of Physics, The Australian National University, Canberra, ACT 2601, Australia.
- Australian Research Council Centre of Excellence for Transformative Meta-Optical Systems, Research School of Physics, The Australian National University, Canberra, ACT 2601, Australia
| | - Lan Fu
- Department of Electronic Materials Engineering, Research School of Physics, The Australian National University, Canberra, ACT 2601, Australia.
- Australian Research Council Centre of Excellence for Transformative Meta-Optical Systems, Research School of Physics, The Australian National University, Canberra, ACT 2601, Australia
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14
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Jiang M, Liu X, Liu M, Zhu R, Li B, Wan P, Shi D, Kan C. Interfacial modulation and plasmonic effect mediated high-brightness green light sources in a single Ga-doped ZnO microwire based heterojunction. CrystEngComm 2022. [DOI: 10.1039/d2ce00917j] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
Heterostructure manufacturing has been extensively studied as indispensable footstones in the progressive semiconductor optoelectronic devices due to their constituent materials, interfacial states and electronic transport capabilities, thus enabling competitive candidates...
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15
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Ghoshal T, Prochukhan N, Morris MA. Sub-25 nm Inorganic and Dielectric Nanopattern Arrays on Substrates: A Block Copolymer-Assisted Lithography. ACS OMEGA 2021; 6:35738-35744. [PMID: 34984304 PMCID: PMC8717533 DOI: 10.1021/acsomega.1c05124] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/12/2021] [Accepted: 12/08/2021] [Indexed: 05/11/2023]
Abstract
A range of well-ordered inorganic (antimony, tin, and tungsten oxide) and dielectric (silica, alumina, and hafnia) nanoparticles and nanowire array patterns are created on substrates by a low-cost block copolymer (BCP) approach. A cylindrical-phase PS-b-PEO BCP is used as a template with hexagonally ordered perpendicular or parallel orientation of PEO cylinders. The solvent annealing parameters such as solvents, temperature, time, and so forth are optimized to achieve the desired patterns. An established BCP in situ inclusion protocol is utilized to achieve the material nanopatterns by spin coating the respective precursor ethanolic solution on the template followed by UV/ozone treatment for oxide conversion and polymer removal. Furthermore, the precursor solution concentrations and stirring times are calibrated to achieve isolated, well-ordered, and uniform-diameter and -thickness nanoparticles and nanowires. All of the material nanopatterns are mimicking the parent BCP nanopatterns. The phases of all of the nanopatterns are determined by X-ray photoelectron spectroscopy. The inorganic and dielectric nanopattern arrays are patterned on a graphoepitaxial substrate for device application.
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Affiliation(s)
- Tandra Ghoshal
- School of Chemistry, AMBER and CRANN, Trinity College Dublin, Dublin D02 AK60, Ireland
| | - Nadezda Prochukhan
- School of Chemistry, AMBER and CRANN, Trinity College Dublin, Dublin D02 AK60, Ireland
| | - Michael A. Morris
- School of Chemistry, AMBER and CRANN, Trinity College Dublin, Dublin D02 AK60, Ireland
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16
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Naziul Haque AKM, Ahmed T, Baten MZ. In-plane directionality control of strongly localized resonant modes of light in disordered arrays of dielectric scatterers. OPTICS EXPRESS 2021; 29:39227-39240. [PMID: 34809291 DOI: 10.1364/oe.443103] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/13/2021] [Accepted: 10/30/2021] [Indexed: 06/13/2023]
Abstract
In this work we propose and analyze techniques of in-plane directionality control of strongly localized resonant modes of light in random arrays of dielectric scatterers. Based on reported diameters and areal densities of epitaxially grown self-organized nanowires, two-dimensional (2D) arrays of dielectric scatterers have been analyzed where randomness is gradually increased along a preferred direction of directionality enhancement. In view of the multiple-scattering mediated wave dynamics and directionality enhancement of light in such arrays, a more conveniently realizable, practical structure is proposed where a 2D periodic array is juxtaposed with a uniform, random scattering medium. Far- and near-field emission characteristics of such arrays show that in spite of the utter lack of periodicity in the disordered regime of the structure, directionality of the high-Q resonant modes is modified such that on average more than 70% of the output power is emitted along the pre-defined direction of preference. Such directionality enhancement and strong localization are nonexistent when the 2D periodic array is replaced with a one-dimensional Bragg reflector, thereby confirming the governing role of in-plane multiple scattering in the process. The techniques presented herein offer novel means of realizing not only directionality tunable edge-emitting random lasers but also numerous other disordered media based photonic structures and systems with higher degrees of control and tunability.
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17
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Zhang X, Yang H, Zhang Y, Liu H. Design of high-quality reflectors for vertical III-V nanowire lasers on Si. NANOTECHNOLOGY 2021; 33:035202. [PMID: 34638105 DOI: 10.1088/1361-6528/ac2f22] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/14/2021] [Accepted: 10/12/2021] [Indexed: 06/13/2023]
Abstract
Nanowires (NWs) with a unique one-dimensional structure can monolithically integrate high-quality III-V semiconductors onto Si platform, which is highly promising to build lasers for Si photonics. However, the lasing from vertically-standing NWs on silicon is much more difficult to achieve compared with NWs broken off from substrates, causing significant challenges in the integration. Here, the challenge of achieving vertically-standing NW lasers is systematically analysed with III-V materials, e.g. GaAs(P) and InAs(P). The poor optical reflectivity at the NW/Si interface results severe optical field leakage to the substrate, and the commonly used SiO2or Si2N3dielectric mask at the interface can only improve it to ∼10%, which is the major obstacle for achieving low-threshold lasing. A NW super lattice distributed Bragg reflector is therefore proposed, which is able to greatly improve the reflectivity to >97%. This study provides a highly-feasible method to greatly improve the performance of vertically-standing NW lasers, which can boost the rapid development of Si photonics.
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Affiliation(s)
- Xin Zhang
- Department of Electronic and Electrical Engineering, University College London, London WC1E 7JE, United Kingdom
- Faculty of Electrical Engineering and Computer Science, Ningbo University, Ningbo 315211, People's Republic of China
| | - Hui Yang
- Department of Materials, Imperial College London, Exhibition Road, London SW7 2AZ, United Kingdom
| | - Yunyan Zhang
- Department of Electronic and Electrical Engineering, University College London, London WC1E 7JE, United Kingdom
- Department of Physics, Universität Paderborn, Warburger Straße 100, D-33098, Paderborn, Germany
| | - Huiyun Liu
- Department of Electronic and Electrical Engineering, University College London, London WC1E 7JE, United Kingdom
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18
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Hansen RP, Zong Y, Agrawal A, Garratt E, Beams R, Tersoff J, Shur M, Nikoobakht B. Chip-Scale Droop-Free Fin Light-Emitting Diodes Using Facet-Selective Contacts. ACS APPLIED MATERIALS & INTERFACES 2021; 13:44663-44672. [PMID: 34494814 DOI: 10.1021/acsami.1c06556] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
Sub-micron-size light sources are currently extremely dim, achieving nanowatt output powers due to the current density and temperature droop. Recently, we reported a droop-free fin light-emitting diode (LED) pixel that at high current densities becomes a laser with record output power in the microwatt range. Here, we show a scalable method for selectively metallizing fins via their nonpolar side facet that allows electrical injection to sub-200 nm wide n-ZnO fins on p-GaN with at least 0.8 μm2 active area. Electrically addressable fin LEDs are fabricated in a linear array format using standard 2 μm resolution photolithography. Electroluminescence analysis across different pixels shows that the fin acts as the active region of the LED and generates a narrow-band ultraviolet emission between ≈368 and ≈390 nm. Investigating fins at high current densities, ranging from 100 to 2000 kA/cm2, shows that their emission increases without any decline even as the junction temperature reaches a range of 200-340 °C. The absence of electron leakage to p-GaN at high injection levels and an undetectable electron-hole escape from the fin at high temperatures indicate that the fin shape is highly efficient in controlling the nonradiative recombination pathways such as Auger recombination. The fin LED geometry is expected to enable the realization of high-brightness arrays of light sources at sub-micron-size regimes suitable for operation at high temperatures and high current densities.
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Affiliation(s)
- Robin P Hansen
- National Institute of Standards and Technology, Gaithersburg, Maryland 20899, United States
| | - Yuqin Zong
- National Institute of Standards and Technology, Gaithersburg, Maryland 20899, United States
| | - Amit Agrawal
- National Institute of Standards and Technology, Gaithersburg, Maryland 20899, United States
- Maryland NanoCenter, University of Maryland, College Park, Maryland 20742, United States
| | - Elias Garratt
- National Institute of Standards and Technology, Gaithersburg, Maryland 20899, United States
| | - Ryan Beams
- National Institute of Standards and Technology, Gaithersburg, Maryland 20899, United States
| | - Jerry Tersoff
- Rensselaer Polytechnic Institute, 8th Street, Troy, New York 12180, United States
| | - Michael Shur
- IBM T. J. Watson Research Center, Yorktown Heights, New York 10598, United States
| | - Babak Nikoobakht
- National Institute of Standards and Technology, Gaithersburg, Maryland 20899, United States
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19
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Hassan MM, Baten MZ. Label-free detection of virus-like particles employing rotationally symmetric nanowire array based whispering gallery and quasi-whispering gallery resonant modes onto a silicon platform. OPTICS EXPRESS 2021; 29:25745-25761. [PMID: 34614897 DOI: 10.1364/oe.432064] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/20/2021] [Accepted: 07/13/2021] [Indexed: 06/13/2023]
Abstract
In spite of tremendous advancements in modern diagnostics, there is a dire need for reliable, label-free detection of highly contagious pathogens like viruses. In view of the limitations of existing diagnostic techniques, the present theoretical study proposes a novel scheme of detecting virus-like particles employing whispering gallery and quasi-whispering gallery resonant modes of a composite optical system. Whereas whispering gallery mode (WGM) resonators are conventionally realized using micro-disk, -ring, -toroid or spherical structures, the present study utilizes a rotationally symmetric array of silicon nanowires which offers higher sensitivity compared to the conventional WGM resonator while detecting virus-like particles. Notwithstanding the relatively low quality factor of the system, the underlying multiple-scattering mediated photon entrapment, coupled with peripheral total-internal reflection, results in high fidelity of the system against low signal-to-noise ratio. Finite difference time domain based numerical analysis has been performed to correlate resonant modes of the array with spatial location of the virus. The correlation has been subsequently utilized for statistical analysis of simulated test cases. Assuming detection to be limited by resolution of the measurement system, results of the analysis suggest that for only about 5% of the simulate test cases the resonant wavelength shift lies within the minimum detection range of 0.001-0.01 nm. For a single virus of 160 nm diameter, more than 8 nm shift of the resonant mode and nearly 100% change of quality factor are attained with the proposed nanowire array based photonic structure.
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20
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Recent Progress of Electrically Pumped AlGaN Diode Lasers in the UV-B and -C Bands. PHOTONICS 2021. [DOI: 10.3390/photonics8070267] [Citation(s) in RCA: 4] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 12/13/2022]
Abstract
The development of electrically pumped semiconductor diode lasers emitting at the ultraviolet (UV)-B and -C spectral bands has been an active area of research over the past several years, motivated by a wide range of emerging applications. III-Nitride materials and their alloys, in particular AlGaN, are the material of choice for the development of this ultrashort-wavelength laser technology. Despite significant progress in AlGaN-based light-emitting diodes (LEDs), the technological advancement and innovation in diode lasers at these spectral bands is lagging due to several technical challenges. Here, the authors review the progress of AlGaN electrically-pumped lasers with respect to very recent achievements made by the scientific community. The devices based on both thin films and nanowires demonstrated to date will be discussed in this review. The state-of-the-art growth technologies, such as molecular beam epitaxy (MBE) and metalorganic chemical vapor deposition (MOCVD); and various foreign substrates/templates used for the laser demonstrations will be highlighted. We will also outline technical challenges associated with the laser development, which must be overcome in order to achieve a critical technological breakthrough and fully realize the potential of these lasers.
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21
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Ishfak Tahmid M, Joti Paul D, Zunaid Baten M. Emergence and tunability of transmission gap in the strongly disordered regime of a dielectric random scattering medium. OPTICS EXPRESS 2021; 29:17215-17226. [PMID: 34154268 DOI: 10.1364/oe.426153] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/26/2021] [Accepted: 05/04/2021] [Indexed: 06/13/2023]
Abstract
Light transmission characteristics in a strongly disordered medium of dielectric scatterers, having dimensionalities similar to those of self-organized GaN nanowires, is analyzed employing finite difference time domain analysis technique. While photonic bandgap like transmission gaps have already been reported for several quasi-crystalline and weakly disordered media, the results of this work show that in spite of the lack of any form of quasi-crystallinity, distinct transmission gaps can be attained in a strongly disordered medium of dielectric scatterers. In fact, similar to the case of a two-dimensional photonic crystal, transmission gap of a uniform random medium of GaN nanowires can be tuned from ultra-violet to visible regime of the spectrum by varying diameter and fill-factor of the nanowires. Comparison of transmission characteristics of periodic, weakly disordered, correlated strongly disordered and uniform strongly disordered arrays having nanowires of identical diameters and fill factors suggest that in spite of the dominance of multiple scattering process, the underlying Mie and Bragg processes contribute to the emergence and tunability of transmission gaps in a strongly disordered medium. Without any loss of generality, the findings of this work offer significant design latitude for controlling transmission properties in the strong disorder regime, thereby offering the prospect of designing disorder based novel photonic and optoelectronic devices and systems.
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22
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Rashidi M, Haggren T, Su Z, Jagadish C, Mokkapati S, Tan HH. Managing Resonant and Nonresonant Lasing Modes in GaAs Nanowire Random Lasers. NANO LETTERS 2021; 21:3901-3907. [PMID: 33900783 DOI: 10.1021/acs.nanolett.1c00455] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
Random lasers are promising, easy-to-fabricate light sources that rely on scattering instead of well-defined optical cavities. We demonstrate random lasing in GaAs nanowires using both randomly oriented and vertically aligned arrays. These configurations are shown to lase in both resonant and nonresonant modes, where aligned nanowires support predominantly resonant lasing and randomly oriented favors nonresonant lasing. On the basis of numerical simulations, aligning the nanowires increases the system's scattering efficiency leading to higher quality factor modes and thus favoring the resonant modes. We further demonstrate two methods to optically suppress resonant mode lasing by increasing the number of excited modes. The light output-light input curves show a pronounced kink for the resonant lasing mode while the nonresonant mode is kink-free. The resonant lasing modes may be used as tunable lasers, and the nonresonant modes exhibit near-thresholdless amplification. Switching between lasing modes opens up new opportunities to use lasers in broader applications.
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Affiliation(s)
- Mohammad Rashidi
- Department of Electronic Materials Engineering, Research School of Physics, The Australian National University, Canberra, Australian Capital Territory 2601, Australia
| | - Tuomas Haggren
- Department of Electronic Materials Engineering, Research School of Physics, The Australian National University, Canberra, Australian Capital Territory 2601, Australia
| | - Zhicheng Su
- Department of Electronic Materials Engineering, Research School of Physics, The Australian National University, Canberra, Australian Capital Territory 2601, Australia
| | - Chennupati Jagadish
- Department of Electronic Materials Engineering, Research School of Physics, The Australian National University, Canberra, Australian Capital Territory 2601, Australia
- Australian Research Council Centre of Excellence for Transformative Meta-Optical Systems, Research School of Physics, The Australian National University, Canberra, Australian Capital Territory 2601, Australia
| | - Sudha Mokkapati
- Department of Materials Science and Engineering, Monash University, Clayton, Victoria 3800, Australia
| | - Hark H Tan
- Department of Electronic Materials Engineering, Research School of Physics, The Australian National University, Canberra, Australian Capital Territory 2601, Australia
- Australian Research Council Centre of Excellence for Transformative Meta-Optical Systems, Research School of Physics, The Australian National University, Canberra, Australian Capital Territory 2601, Australia
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23
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Gačević Ž, Grandal J, Guo Q, Kirste R, Varela M, Sitar Z, Sánchez García MA. Structural and optical properties of self-assembled AlN nanowires grown on SiO 2/Si substrates by molecular beam epitaxy. NANOTECHNOLOGY 2021; 32:195601. [PMID: 33535196 DOI: 10.1088/1361-6528/abe2c7] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
Self-assembled AlN nanowires (NWs) are grown by plasma-assisted molecular beam epitaxy (PAMBE) on SiO2/Si (111) substrates. Using a combination of in situ reflective high energy electron diffraction and ex situ x-ray diffraction (XRD), we show that the NWs grow nearly strain-free, preferentially perpendicular to the amorphous SiO2 interlayer and without epitaxial relationship to Si(111) substrate, as expected. Scanning electron microscopy investigation reveals significant NWs coalescence, which results in their progressively increasing diameter and formation of columnar structures with non-hexagonal cross-section. Making use of scanning transmission electron microscopy (STEM), the NWs initial diameters are found in the 20-30 nm range. In addition, the formation of a thin (≈30 nm) polycrystalline AlN layer is observed on the substrate surface. Regarding the structural quality of the AlN NWs, STEM measurements reveal the formation of extended columnar regions, which grow with a virtually perfect metal-polarity wurtzite arrangement and with extended defects only sporadically observed. Combination of STEM and electron energy loss spectroscopy reveals the formation of continuous aluminum oxide (1-2 nm) on the NW surface. Low temperature photoluminescence measurements reveal a single near-band-edge (NBE) emission peak, positioned at 6.03 eV (at 2 K), a value consistent with nearly zero NW strain evidenced by XRD and in agreement with the values obtained on AlN bulk layers synthesized by other growth techniques. The significant full-width-at-half-maximum of NBE emission, found at ≈20 meV (at 2 K), suggests that free and bound excitons are mixed together within this single emission band. Finally, the optical properties of the hereby reported AlN NWs grown by PAMBE are comprehensively compared to optical properties of bulk, epitaxial and/or columnar AlN grown by various techniques such as: physical vapor transport, metal organic vapor phase epitaxy, metal organic chemical vapor deposition and molecular beam epitaxy.
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Affiliation(s)
- Ž Gačević
- ISOM, Universidad Politécnica de Madrid Avda. Complutense 30, E-28040 Madrid, Spain
| | - J Grandal
- ISOM, Universidad Politécnica de Madrid Avda. Complutense 30, E-28040 Madrid, Spain
- GFMC, Departamento de Física de los Materiales & Instituto Pluridisciplinar, Universidad Complutense de Madrid, E-28040, Spain
| | - Q Guo
- Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC 27695-7919, United States of America
| | - R Kirste
- Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC 27695-7919, United States of America
| | - M Varela
- GFMC, Departamento de Física de los Materiales & Instituto Pluridisciplinar, Universidad Complutense de Madrid, E-28040, Spain
| | - Z Sitar
- Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC 27695-7919, United States of America
| | - M A Sánchez García
- ISOM, Universidad Politécnica de Madrid Avda. Complutense 30, E-28040 Madrid, Spain
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24
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Soopy AKK, Li Z, Tang T, Sun J, Xu B, Zhao C, Najar A. In(Ga)N Nanostructures and Devices Grown by Molecular Beam Epitaxy and Metal-Assisted Photochemical Etching. NANOMATERIALS (BASEL, SWITZERLAND) 2021; 11:E126. [PMID: 33430484 PMCID: PMC7827665 DOI: 10.3390/nano11010126] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 12/11/2020] [Revised: 12/28/2020] [Accepted: 12/31/2020] [Indexed: 02/01/2023]
Abstract
This review summarizes the recent research on nitride nanostructures and their applications. We cover recent advances in the synthesis and growth of porous structures and low-dimensional nitride nanostructures via metal-assisted photochemical etching and molecular beam epitaxy. The growth of nitride materials on various substrates, which improves their crystal quality, doping efficiency, and flexibility of tuning performance, is discussed in detail. Furthermore, the recent development of In(Ga)N nanostructure applications (light-emitting diodes, lasers, and gas sensors) is presented. Finally, the challenges and directions in this field are addressed.
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Affiliation(s)
- Abdul Kareem K. Soopy
- Department of Physics, College of Science, United Arab Emirates University, Al Ain 15551, UAE;
| | - Zhaonan Li
- Wuhan National Laboratory for Optoelectronics, School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074, China;
| | - Tianyi Tang
- Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences & Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, Beijing 100083, China; (T.T.); (J.S.); (B.X.)
- College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Science, Beijing 101804, China
| | - Jiaqian Sun
- Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences & Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, Beijing 100083, China; (T.T.); (J.S.); (B.X.)
- College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Science, Beijing 101804, China
| | - Bo Xu
- Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences & Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, Beijing 100083, China; (T.T.); (J.S.); (B.X.)
- College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Science, Beijing 101804, China
| | - Chao Zhao
- Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences & Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, Beijing 100083, China; (T.T.); (J.S.); (B.X.)
- College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Science, Beijing 101804, China
| | - Adel Najar
- Department of Physics, College of Science, United Arab Emirates University, Al Ain 15551, UAE;
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Winge DO, Limpert S, Linke H, Borgström MT, Webb B, Heinze S, Mikkelsen A. Implementing an Insect Brain Computational Circuit Using III-V Nanowire Components in a Single Shared Waveguide Optical Network. ACS PHOTONICS 2020; 7:2787-2798. [PMID: 33123615 PMCID: PMC7587142 DOI: 10.1021/acsphotonics.0c01003] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/22/2020] [Indexed: 05/05/2023]
Abstract
Recent developments in photonics include efficient nanoscale optoelectronic components and novel methods for subwavelength light manipulation. Here, we explore the potential offered by such devices as a substrate for neuromorphic computing. We propose an artificial neural network in which the weighted connectivity between nodes is achieved by emitting and receiving overlapping light signals inside a shared quasi 2D waveguide. This decreases the circuit footprint by at least an order of magnitude compared to existing optical solutions. The reception, evaluation, and emission of the optical signals are performed by neuron-like nodes constructed from known, highly efficient III-V nanowire optoelectronics. This minimizes power consumption of the network. To demonstrate the concept, we build a computational model based on an anatomically correct, functioning model of the central-complex navigation circuit of the insect brain. We simulate in detail the optical and electronic parts required to reproduce the connectivity of the central part of this network using previously experimentally derived parameters. The results are used as input in the full model, and we demonstrate that the functionality is preserved. Our approach points to a general method for drastically reducing the footprint and improving power efficiency of optoelectronic neural networks, leveraging the superior speed and energy efficiency of light as a carrier of information.
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Affiliation(s)
- David O. Winge
- Department
of Physics and NanoLund, Lund University, P.O. Box 118, 221 00 Lund, Sweden
- E-mail:
| | - Steven Limpert
- Department
of Physics and NanoLund, Lund University, P.O. Box 118, 221 00 Lund, Sweden
| | - Heiner Linke
- Department
of Physics and NanoLund, Lund University, P.O. Box 118, 221 00 Lund, Sweden
| | - Magnus T. Borgström
- Department
of Physics and NanoLund, Lund University, P.O. Box 118, 221 00 Lund, Sweden
| | - Barbara Webb
- School
of Informatics, University of Edinburgh, 10 Crichton Street, Edinburgh EH8 9AB, United Kingdom
| | - Stanley Heinze
- Lund
Vision Group, Department of Biology, Lund University, 22362 Lund, Sweden
| | - Anders Mikkelsen
- Department
of Physics and NanoLund, Lund University, P.O. Box 118, 221 00 Lund, Sweden
- E-mail:
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26
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Wang G, Zhang L, Wang Y, Shao Y, Chen C, Liu G, Yao X, Wu Y, Hao X. Growth and Stress Analysis of Spontaneous Nucleation c
-Plane Bulk AlN Crystals by a PVT Method. CRYSTAL RESEARCH AND TECHNOLOGY 2020. [DOI: 10.1002/crat.202000118] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 10/22/2022]
Affiliation(s)
- Guodong Wang
- State Key Lab of Crystal Materials; Shandong University; Jinan 250100 P. R. China
| | - Lei Zhang
- State Key Lab of Crystal Materials; Shandong University; Jinan 250100 P. R. China
| | - Yong Wang
- State Key Lab of Crystal Materials; Shandong University; Jinan 250100 P. R. China
| | - Yongliang Shao
- State Key Lab of Crystal Materials; Shandong University; Jinan 250100 P. R. China
| | - Chengmin Chen
- Energy Research Institute; Qilu University of Technology (Shandong Academy of Sciences); Jinan 250014 P. R. China
| | - Guangxia Liu
- Energy Research Institute; Qilu University of Technology (Shandong Academy of Sciences); Jinan 250014 P. R. China
| | - Xiaogang Yao
- State Key Lab of Crystal Materials; Shandong University; Jinan 250100 P. R. China
| | - Yongzhong Wu
- State Key Lab of Crystal Materials; Shandong University; Jinan 250100 P. R. China
| | - Xiaopeng Hao
- State Key Lab of Crystal Materials; Shandong University; Jinan 250100 P. R. China
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27
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Zhang X, Yao X, Li Z, Zhou C, Yuan X, Tang Z, Hu W, Gan X, Zou J, Chen P, Lu W. Surface-States-Modulated High-Performance InAs Nanowire Phototransistor. J Phys Chem Lett 2020; 11:6413-6419. [PMID: 32673487 DOI: 10.1021/acs.jpclett.0c01879] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 05/05/2023]
Abstract
We report a high-performance InAs nanowire phototransistor with the photoresponse mechanism governed by the gate-controlled surface states. Detailed characterizations suggest that the high density of surface defect states of the InAs nanowire can capture electrons from the nanowire core to form negative surface charge centers. Before and after light illumination, nanowire surface states undergo processes of capturing and neutralizing the electrons, respectively. This leads to an increase in the concentration and mobility of electrons after light illumination, which endows the device with remarkable photoresponsivity. After modulating the surface states through gate voltage and surface passivation, significantly high responsivity of up to 4.4 × 103 A/W and gain of up to 2.7 × 103 under the illumination of light at the wavelength of 2000 nm are obtained, putting our devices among the high-performance short-wave infrared nanowire photodetectors. This work provides an important reference for understanding the surface effects of nanomaterials and enhancing the performance of nanophotodetectors by modulating the surface states.
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Affiliation(s)
- Xutao Zhang
- School of Physical Science and Technology, Northwestern Polytechnical University, Xi'an, Shaanxi 710129, China
- State Key Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yutian Road, Shanghai 200083, China
- University of Chinese Academy of Sciences, 19 Yuquan Road, Beijing 100049, China
| | - Xiaomei Yao
- State Key Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yutian Road, Shanghai 200083, China
- University of Chinese Academy of Sciences, 19 Yuquan Road, Beijing 100049, China
| | - Ziyuan Li
- Research School of Physics, The Australian National University, Canberra, ACT 2601, Australia
| | | | - Xiaoming Yuan
- Research School of Physics, The Australian National University, Canberra, ACT 2601, Australia
- Hunan Key Laboratory of Super Microstructure and Ultrafast Process, School of Physics and Electronics, Central South University, Changsha, Hunan 410083, China
| | - Zhou Tang
- State Key Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yutian Road, Shanghai 200083, China
| | - Weida Hu
- State Key Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yutian Road, Shanghai 200083, China
- University of Chinese Academy of Sciences, 19 Yuquan Road, Beijing 100049, China
| | - Xuetao Gan
- School of Physical Science and Technology, Northwestern Polytechnical University, Xi'an, Shaanxi 710129, China
| | | | - Pingping Chen
- State Key Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yutian Road, Shanghai 200083, China
- University of Chinese Academy of Sciences, 19 Yuquan Road, Beijing 100049, China
| | - Wei Lu
- State Key Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yutian Road, Shanghai 200083, China
- University of Chinese Academy of Sciences, 19 Yuquan Road, Beijing 100049, China
- School of Physical Science and Technology, ShanghaiTech University, Shanghai 201210, China
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28
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Nikoobakht B, Hansen RP, Zong Y, Agrawal A, Shur M, Tersoff J. High-brightness lasing at submicrometer enabled by droop-free fin light-emitting diodes (LEDs). SCIENCE ADVANCES 2020; 6:eaba4346. [PMID: 32851164 PMCID: PMC7428337 DOI: 10.1126/sciadv.aba4346] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 12/04/2019] [Accepted: 07/02/2020] [Indexed: 06/11/2023]
Abstract
"Efficiency droop," i.e., a decline in brightness of light-emitting diodes (LEDs) at high electrical currents, limits the performance of all commercial LEDs and has limited the output power of submicrometer LEDs and lasers to nanowatts. We present a fin p-n junction LED pixel that eliminates efficiency droop, allowing LED brightness to increase linearly with current. With record current densities of 1000 kA/cm2, the LEDs transition to lasing, with brightness over 20 μW. Despite a light extraction efficiency of only 15%, these devices exceed the output power of any previous electrically driven submicrometer LED or laser pixel by 100 to 1000 times while showing comparable external quantum efficiencies. Modeling suggests that spreading of the electron-hole recombination region in fin LEDs at high injection levels suppresses the nonradiative Auger recombination processes. Further refinement of this design is expected to enable a new generation of high-brightness LED and laser pixels for macro- and microscale applications.
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Affiliation(s)
- Babak Nikoobakht
- National Institute of Standards and Technology, Gaithersburg, MD 20899, USA
| | - Robin P. Hansen
- National Institute of Standards and Technology, Gaithersburg, MD 20899, USA
| | - Yuqin Zong
- National Institute of Standards and Technology, Gaithersburg, MD 20899, USA
| | - Amit Agrawal
- National Institute of Standards and Technology, Gaithersburg, MD 20899, USA
- Maryland NanoCenter, University of Maryland, College Park, MD 20742, USA
| | - Michael Shur
- Rensselaer Polytechnic Institute, 8th Street, Troy, NY 12180, USA
| | - Jerry Tersoff
- IBM T. J. Watson Research Center, Yorktown Heights, NY 10598, USA
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29
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Jiang Y, Liu YY, Liu X, Lin H, Gao K, Lai WY, Huang W. Organic solid-state lasers: a materials view and future development. Chem Soc Rev 2020; 49:5885-5944. [PMID: 32672260 DOI: 10.1039/d0cs00037j] [Citation(s) in RCA: 98] [Impact Index Per Article: 24.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/14/2022]
Abstract
Lasing applications have spread over various aspects of human life. To meet the developing trends of the laser industry towards being miniature, portable, and highly integrated, new laser technologies are in urgent demand. Organic semiconductors are promising gain medium candidates for novel laser devices, due to their convenient processing techniques, ease of spectral and chemical tuning, low refractive indexes, mechanical flexibilities, and low thresholds, etc. organic solid-state lasers (OSSLs) open up a new horizon of simple, low-cost, time-saving, versatile and environmental-friendly manufacturing technologies for new and desirable laser structures (micro-, asymmetric, flexible, etc.) to unleash the full potential of semiconductor lasers for future electronics. Besides the development of optical feedback structures, the design and synthesis of robust organic gain media is critical as a vigorous aspect of OSSLs. Herein, we provide a comprehensive review of recent advances in organic gain materials, mainly focused on organic semiconductors for OSSLs. The significant breakthroughs toward electrical pumping of OSSLs are emphasized. Opportunities, challenges and future research directions for the design of organic gain media are also discussed.
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Affiliation(s)
- Yi Jiang
- Key Laboratory for Organic Electronics and Information Displays (KLOEID), Institute of Advanced Materials (IAM), Nanjing University of Posts & Telecommunications, 9 Wenyuan Road, Nanjing 210023, China.
| | - Yuan-Yuan Liu
- Key Laboratory for Organic Electronics and Information Displays (KLOEID), Institute of Advanced Materials (IAM), Nanjing University of Posts & Telecommunications, 9 Wenyuan Road, Nanjing 210023, China.
| | - Xu Liu
- Key Laboratory for Organic Electronics and Information Displays (KLOEID), Institute of Advanced Materials (IAM), Nanjing University of Posts & Telecommunications, 9 Wenyuan Road, Nanjing 210023, China.
| | - He Lin
- Key Laboratory for Organic Electronics and Information Displays (KLOEID), Institute of Advanced Materials (IAM), Nanjing University of Posts & Telecommunications, 9 Wenyuan Road, Nanjing 210023, China.
| | - Kun Gao
- Key Laboratory for Organic Electronics and Information Displays (KLOEID), Institute of Advanced Materials (IAM), Nanjing University of Posts & Telecommunications, 9 Wenyuan Road, Nanjing 210023, China.
| | - Wen-Yong Lai
- Key Laboratory for Organic Electronics and Information Displays (KLOEID), Institute of Advanced Materials (IAM), Nanjing University of Posts & Telecommunications, 9 Wenyuan Road, Nanjing 210023, China. and Frontiers Science Center for Flexible Electronics, Xi'an Institute of Flexible Electronics (IFE) and Xi'an Institute of Biomedical Materials & Engineering, Northwestern Polytechnical University, 127 West Youyi Road, Xi'an 710072, China
| | - Wei Huang
- Key Laboratory for Organic Electronics and Information Displays (KLOEID), Institute of Advanced Materials (IAM), Nanjing University of Posts & Telecommunications, 9 Wenyuan Road, Nanjing 210023, China. and Frontiers Science Center for Flexible Electronics, Xi'an Institute of Flexible Electronics (IFE) and Xi'an Institute of Biomedical Materials & Engineering, Northwestern Polytechnical University, 127 West Youyi Road, Xi'an 710072, China
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30
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Liu B, Chen D, Lu H, Tao T, Zhuang Z, Shao Z, Xu W, Ge H, Zhi T, Ren F, Ye J, Xie Z, Zhang R. Hybrid Light Emitters and UV Solar-Blind Avalanche Photodiodes based on III-Nitride Semiconductors. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2020; 32:e1904354. [PMID: 31599998 DOI: 10.1002/adma.201904354] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/08/2019] [Revised: 08/29/2019] [Indexed: 06/10/2023]
Abstract
In the last two decades, remarkable progress has been achieved in the field of optoelectronic devices based on III-nitride semiconductors. In terms of photonics applications in the visible-UV spectral range, III-nitrides are one of the most promising materials. For instance, emerging gallium nitride (GaN)-based micro-light-emitting diode (LED) technology for high-resolution display, and UV photo-detection for environmental monitoring, health, and medical applications. In this work, hybrid micro/nano-LEDs with integration of II-VI quantum dots by means of lithography and nano-imprinting patterning techniques are demonstrated, and high-performance red/green/blue and white emissions are achieved. Consequently, plasmonic nanolasers are designed and fabricated using a metal-oxide-semiconductor structure, where strong surface plasmon polariton coupling leads to the efficient lasing with a low excitation threshold from the visible to UV tunable spectral range. Furthermore, performance-improved AlGaN UV solar-blind avalanche photodiodes (APDs) with a separate absorption and multiplication structure by polarization engineering are reported. These APDs deliver a record-high avalanche gain of up to 1.6 × 105 . These newest advances in nano/micro-LEDs, nanolasers, and APDs can shed light on the emerging capabilities of III-nitride in cutting-edge applications.
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Affiliation(s)
- Bin Liu
- Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing National Laboratory of Microstructures, Nanjing University, Nanjing, 210093, P. R. China
| | - Dunjun Chen
- Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing National Laboratory of Microstructures, Nanjing University, Nanjing, 210093, P. R. China
| | - Hai Lu
- Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing National Laboratory of Microstructures, Nanjing University, Nanjing, 210093, P. R. China
| | - Tao Tao
- Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing National Laboratory of Microstructures, Nanjing University, Nanjing, 210093, P. R. China
| | - Zhe Zhuang
- Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing National Laboratory of Microstructures, Nanjing University, Nanjing, 210093, P. R. China
| | - Zhengguang Shao
- Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing National Laboratory of Microstructures, Nanjing University, Nanjing, 210093, P. R. China
| | - Weizong Xu
- Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing National Laboratory of Microstructures, Nanjing University, Nanjing, 210093, P. R. China
| | - Haixiong Ge
- College of Engineering and Applied Sciences, Nanjing National Laboratory of Microstructures, Nanjing University, Nanjing, 210093, P. R. China
| | - Ting Zhi
- College of Electronic Science and Engineering, Nanjing University of Posts and Telecommunications, Nanjing, 210023, P. R. China
| | - Fangfang Ren
- Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing National Laboratory of Microstructures, Nanjing University, Nanjing, 210093, P. R. China
| | - Jiandong Ye
- Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing National Laboratory of Microstructures, Nanjing University, Nanjing, 210093, P. R. China
| | - Zili Xie
- Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing National Laboratory of Microstructures, Nanjing University, Nanjing, 210093, P. R. China
| | - Rong Zhang
- Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing National Laboratory of Microstructures, Nanjing University, Nanjing, 210093, P. R. China
- Xiamen University, Xiamen, 316005, P. R. China
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31
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Khalilian M, Bi Z, Johansson J, Lenrick F, Hultin O, Colvin J, Timm R, Wallenberg R, Ohlsson J, Pistol ME, Gustafsson A, Samuelson L. Dislocation-Free and Atomically Flat GaN Hexagonal Microprisms for Device Applications. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2020; 16:e1907364. [PMID: 32578387 DOI: 10.1002/smll.201907364] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/16/2019] [Revised: 04/28/2020] [Indexed: 05/12/2023]
Abstract
III-nitrides are considered the material of choice for light-emitting diodes (LEDs) and lasers in the visible to ultraviolet spectral range. The development is hampered by lattice and thermal mismatch between the nitride layers and the growth substrate leading to high dislocation densities. In order to overcome the issue, efforts have gone into selected area growth of nanowires (NWs), using their small footprint in the substrate to grow virtually dislocation-free material. Their geometry is defined by six tall side-facets and a pointed tip which limits the design of optoelectronic devices. Growth of dislocation-free and atomically smooth 3D hexagonal GaN micro-prisms with a flat, micrometer-sized top-surface is presented. These self-forming structures are suitable for optical devices such as low-loss optical cavities for high-efficiency LEDs. The structures are made by annealing GaN NWs with a thick radial shell, reforming them into hexagonal flat-top prisms with six equivalents either m- or s-facets depending on the initial heights of the top pyramid and m-facets of the NWs. This shape is kinetically controlled and the reformation can be explained with a phenomenological model based on Wulff construction that have been developed. It is expected that the results will inspire further research into micron-sized III-nitride-based devices.
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Affiliation(s)
- Maryam Khalilian
- Solid State Physics and NanoLund, Lund University, Box 118, Lund, 221 00, Sweden
| | - Zhaoxia Bi
- Solid State Physics and NanoLund, Lund University, Box 118, Lund, 221 00, Sweden
| | - Jonas Johansson
- Solid State Physics and NanoLund, Lund University, Box 118, Lund, 221 00, Sweden
| | - Filip Lenrick
- nCHREM/Centre for Analysis and Synthesis and NanoLund, Lund University, Box 124, Lund, 221 00, Sweden
| | - Olof Hultin
- Solid State Physics and NanoLund, Lund University, Box 118, Lund, 221 00, Sweden
| | - Jovana Colvin
- Synchrotron Radiation Research and NanoLund, Lund University, Box 118, Lund, 221 00, Sweden
| | - Rainer Timm
- Synchrotron Radiation Research and NanoLund, Lund University, Box 118, Lund, 221 00, Sweden
| | - Reine Wallenberg
- nCHREM/Centre for Analysis and Synthesis and NanoLund, Lund University, Box 124, Lund, 221 00, Sweden
| | - Jonas Ohlsson
- Solid State Physics and NanoLund, Lund University, Box 118, Lund, 221 00, Sweden
| | - Mats-Erik Pistol
- Solid State Physics and NanoLund, Lund University, Box 118, Lund, 221 00, Sweden
| | - Anders Gustafsson
- Solid State Physics and NanoLund, Lund University, Box 118, Lund, 221 00, Sweden
| | - Lars Samuelson
- Solid State Physics and NanoLund, Lund University, Box 118, Lund, 221 00, Sweden
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32
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Jeong J, Wang Q, Cha J, Jin DK, Shin DH, Kwon S, Kang BK, Jang JH, Yang WS, Choi YS, Yoo J, Kim JK, Lee CH, Lee SW, Zakhidov A, Hong S, Kim MJ, Hong YJ. Remote heteroepitaxy of GaN microrod heterostructures for deformable light-emitting diodes and wafer recycle. SCIENCE ADVANCES 2020; 6:eaaz5180. [PMID: 32537496 PMCID: PMC7269673 DOI: 10.1126/sciadv.aaz5180] [Citation(s) in RCA: 23] [Impact Index Per Article: 5.8] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/16/2019] [Accepted: 04/07/2020] [Indexed: 05/14/2023]
Abstract
There have been rapidly increasing demands for flexible lighting apparatus, and micrometer-scale light-emitting diodes (LEDs) are regarded as one of the promising lighting sources for deformable device applications. Herein, we demonstrate a method of creating a deformable LED, based on remote heteroepitaxy of GaN microrod (MR) p-n junction arrays on c-Al2O3 wafer across graphene. The use of graphene allows the transfer of MR LED arrays onto a copper plate, and spatially separate MR arrays offer ideal device geometry suitable for deformable LED in various shapes without serious device performance degradation. Moreover, remote heteroepitaxy also allows the wafer to be reused, allowing reproducible production of MR LEDs using a single substrate without noticeable device degradation. The remote heteroepitaxial relation is determined by high-resolution scanning transmission electron microscopy, and the density functional theory simulations clarify how the remote heteroepitaxy is made possible through graphene.
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Affiliation(s)
- Junseok Jeong
- Department of Nanotechnology and Advanced Materials Engineering, Sejong University, Seoul 05006, Republic of Korea
- GRI-TPC International Research Center, Sejong University, Seoul 05006, Republic of Korea
| | - Qingxiao Wang
- Department of Materials Science and Engineering, The University of Texas at Dallas, Richardson, TX 75080, USA
| | - Janghwan Cha
- GRI-TPC International Research Center, Sejong University, Seoul 05006, Republic of Korea
- Graphene Research Institute (GRI), Department of Physics and Astronomy, Sejong University, Seoul 05006, Republic of Korea
| | - Dae Kwon Jin
- Department of Nanotechnology and Advanced Materials Engineering, Sejong University, Seoul 05006, Republic of Korea
- GRI-TPC International Research Center, Sejong University, Seoul 05006, Republic of Korea
| | - Dong Hoon Shin
- Department of Physics, Ewha Womans University, Seoul 03760, Republic of Korea
| | - Sunah Kwon
- Department of Materials Science and Engineering, The University of Texas at Dallas, Richardson, TX 75080, USA
| | - Bong Kyun Kang
- Nano Materials Research Center, Korea Electronics Technology Institute (KETI), Seongnam, Gyeonggi-do 13509, Republic of Korea
| | - Jun Hyuk Jang
- ITSWELL Division R&D Center, CoAsia Co. Ltd., Incheon 21634, Republic of Korea
| | - Woo Seok Yang
- Nano Materials Research Center, Korea Electronics Technology Institute (KETI), Seongnam, Gyeonggi-do 13509, Republic of Korea
| | - Yong Seok Choi
- ITSWELL Division R&D Center, CoAsia Co. Ltd., Incheon 21634, Republic of Korea
| | - Jinkyoung Yoo
- Center for Integrated Nanotechnologies (CINT), Los Alamos National Laboratory, Los Alamos, NM 87545, USA
| | - Jong Kyu Kim
- Department of Materials Science and Engineering, Pohang University of Science and Technology (POSTECH), Pohang, Gyeongbuk 37673, Republic of Korea
| | - Chul-Ho Lee
- KU-KIST Graduate School of Converging Science and Technology, Korea University, Anam-ro 145, Seoul 02841, Republic of Korea
| | - Sang Wook Lee
- Department of Physics, Ewha Womans University, Seoul 03760, Republic of Korea
| | - Anvar Zakhidov
- TPC & Department of Physics, The University of Texas at Dallas, Richardson, TX 75080, USA
| | - Suklyun Hong
- GRI-TPC International Research Center, Sejong University, Seoul 05006, Republic of Korea
- Graphene Research Institute (GRI), Department of Physics and Astronomy, Sejong University, Seoul 05006, Republic of Korea
- Corresponding author. (Y.J.H.); (M.J.K.); (S.H.)
| | - Moon J. Kim
- GRI-TPC International Research Center, Sejong University, Seoul 05006, Republic of Korea
- Department of Materials Science and Engineering, The University of Texas at Dallas, Richardson, TX 75080, USA
- Graphene Research Institute (GRI), Department of Physics and Astronomy, Sejong University, Seoul 05006, Republic of Korea
- Corresponding author. (Y.J.H.); (M.J.K.); (S.H.)
| | - Young Joon Hong
- Department of Nanotechnology and Advanced Materials Engineering, Sejong University, Seoul 05006, Republic of Korea
- GRI-TPC International Research Center, Sejong University, Seoul 05006, Republic of Korea
- Corresponding author. (Y.J.H.); (M.J.K.); (S.H.)
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33
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Wong-Leung J, Yang I, Li Z, Karuturi SK, Fu L, Tan HH, Jagadish C. Engineering III-V Semiconductor Nanowires for Device Applications. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2020; 32:e1904359. [PMID: 31621966 DOI: 10.1002/adma.201904359] [Citation(s) in RCA: 9] [Impact Index Per Article: 2.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/08/2019] [Revised: 08/19/2019] [Indexed: 05/26/2023]
Abstract
III-V semiconductor nanowires offer potential new device applications because of the unique properties associated with their 1D geometry and the ability to create quantum wells and other heterostructures with a radial and an axial geometry. Here, an overview of challenges in the bottom-up approaches for nanowire synthesis using catalyst and catalyst-free methods and the growth of axial and radial heterostructures is given. The work on nanowire devices such as lasers, light emitting nanowires, and solar cells and an overview of the top-down approaches for water splitting technologies is reviewed. The authors conclude with an analysis of the research field and the future research directions.
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Affiliation(s)
- Jennifer Wong-Leung
- Department of Electronic Materials Engineering, Research School of Physics and Engineering, The Australian National University, Canberra, ACT2601, Australia
| | - Inseok Yang
- Department of Electronic Materials Engineering, Research School of Physics and Engineering, The Australian National University, Canberra, ACT2601, Australia
| | - Ziyuan Li
- Department of Electronic Materials Engineering, Research School of Physics and Engineering, The Australian National University, Canberra, ACT2601, Australia
| | - Siva Krishna Karuturi
- Department of Electronic Materials Engineering, Research School of Physics and Engineering, The Australian National University, Canberra, ACT2601, Australia
- Research School of Electrical, Energy and Materials Engineering, The Australian National University, Canberra, ACT2601, Australia
| | - Lan Fu
- Department of Electronic Materials Engineering, Research School of Physics and Engineering, The Australian National University, Canberra, ACT2601, Australia
| | - Hark Hoe Tan
- Department of Electronic Materials Engineering, Research School of Physics and Engineering, The Australian National University, Canberra, ACT2601, Australia
| | - Chennupati Jagadish
- Department of Electronic Materials Engineering, Research School of Physics and Engineering, The Australian National University, Canberra, ACT2601, Australia
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34
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Review on III-V Semiconductor Single Nanowire-Based Room Temperature Infrared Photodetectors. MATERIALS 2020; 13:ma13061400. [PMID: 32204482 PMCID: PMC7142779 DOI: 10.3390/ma13061400] [Citation(s) in RCA: 16] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 02/10/2020] [Revised: 03/14/2020] [Accepted: 03/17/2020] [Indexed: 12/13/2022]
Abstract
Recently, III-V semiconductor nanowires have been widely explored as promising candidates for high-performance photodetectors due to their one-dimensional morphology, direct and tunable bandgap, as well as unique optical and electrical properties. Here, the recent development of III-V semiconductor-based single nanowire photodetectors for infrared photodetection is reviewed and compared, including material synthesis, representative types (under different operation principles and novel concepts), and device performance, as well as their challenges and future perspectives.
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35
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Bao Q, Li W, Xu P, Zhang M, Dai D, Wang P, Guo X, Tong L. On-chip single-mode CdS nanowire laser. LIGHT, SCIENCE & APPLICATIONS 2020; 9:42. [PMID: 32194956 PMCID: PMC7073330 DOI: 10.1038/s41377-020-0277-0] [Citation(s) in RCA: 8] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/31/2019] [Revised: 02/22/2020] [Accepted: 02/26/2020] [Indexed: 05/24/2023]
Abstract
By integrating a free-standing cadmium sulfide (CdS) nanowire onto a silicon nitride (SiN) photonic chip, we demonstrate a highly compact on-chip single-mode CdS nanowire laser. The mode selection is realized using a Mach-Zehnder interferometer (MZI) structure. When the pumping intensity exceeds the lasing threshold of 4.9 kW/cm2, on-chip single-mode lasing at ~518.9 nm is achieved with a linewidth of 0.1 nm and a side-mode suppression ratio of up to a factor of 20 (13 dB). The output of the nanowire laser is channelled into an on-chip SiN waveguide with high efficiency (up to 58%) by evanescent coupling, and the directional coupling ratio between the two output ports can be varied from 90 to 10% by predesigning the coupling length of the SiN waveguide. Our results open new opportunities for both nanowire photonic devices and on-chip light sources and may pave the way towards a new category of hybrid nanolasers for chip-integrated applications.
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Affiliation(s)
- Qingyang Bao
- State Key Laboratory of Modern Optical Instrumentation, College of Optical Science and Engineering, Zhejiang University, Hangzhou, 310027 China
| | - Weijia Li
- State Key Laboratory of Modern Optical Instrumentation, College of Optical Science and Engineering, Zhejiang University, Hangzhou, 310027 China
| | - Peizhen Xu
- State Key Laboratory of Modern Optical Instrumentation, College of Optical Science and Engineering, Zhejiang University, Hangzhou, 310027 China
| | - Ming Zhang
- State Key Laboratory of Modern Optical Instrumentation, College of Optical Science and Engineering, Zhejiang University, Hangzhou, 310027 China
| | - Daoxin Dai
- State Key Laboratory of Modern Optical Instrumentation, College of Optical Science and Engineering, Zhejiang University, Hangzhou, 310027 China
| | - Pan Wang
- State Key Laboratory of Modern Optical Instrumentation, College of Optical Science and Engineering, Zhejiang University, Hangzhou, 310027 China
| | - Xin Guo
- State Key Laboratory of Modern Optical Instrumentation, College of Optical Science and Engineering, Zhejiang University, Hangzhou, 310027 China
| | - Limin Tong
- State Key Laboratory of Modern Optical Instrumentation, College of Optical Science and Engineering, Zhejiang University, Hangzhou, 310027 China
- Collaborative Innovation Center of Extreme Optics, Shanxi University, Taiyuan, 030006 China
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36
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Li J, Yang W, Wu A, Zhang X, Xu T, Liu B. Band-Gap Tunable 2D Hexagonal (GaN) 1-x(ZnO) x Solid-Solution Nanosheets for Photocatalytic Water Splitting. ACS APPLIED MATERIALS & INTERFACES 2020; 12:8583-8591. [PMID: 31945289 DOI: 10.1021/acsami.9b21793] [Citation(s) in RCA: 12] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
A (GaN)1-x(ZnO)x solid solution as a promising visible-light-driven photocatalyst for overall water splitting has attracted extensive attention. In this work, we proposed a template reactive strategy toward the synthesis of band-gap tunable 2D (GaN)1-x(ZnO)x nanosheets as thin as 14 nm to reduce the carrier transportation path and thus efficiently decrease the recombination of electrons and holes. It is demonstrated that the template strategy enables an ideal morphology and structure transformation from hexagonal 2D ZnGa2O4 nanosheets to 2D (GaN)1-x(ZnO)x nanosheets in the nitridation process. After the modification of 1 wt % of Rh cocatalyst, the flowerlike (GaN)0.89(ZnO)0.11 nanosheets show an enhanced hydrogen evolution in pure water (pH 4.5).
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Affiliation(s)
- Jing Li
- Shenyang National Laboratory for Materials Science (SYNL) , Institute of Metal Research (IMR), Chinese Academy of Sciences (CAS) , No. 72 Wenhua Road , Shenyang 110016 , China
| | - Wenjin Yang
- Shenyang National Laboratory for Materials Science (SYNL) , Institute of Metal Research (IMR), Chinese Academy of Sciences (CAS) , No. 72 Wenhua Road , Shenyang 110016 , China
| | - Aimin Wu
- Key Laboratory of Materials Modification by Laser, Ion, and Electron Beams (Ministry of Education) , Dalian University of Technology , Dalian 116024 , China
| | - Xinglai Zhang
- Shenyang National Laboratory for Materials Science (SYNL) , Institute of Metal Research (IMR), Chinese Academy of Sciences (CAS) , No. 72 Wenhua Road , Shenyang 110016 , China
| | - Tingting Xu
- Shenyang National Laboratory for Materials Science (SYNL) , Institute of Metal Research (IMR), Chinese Academy of Sciences (CAS) , No. 72 Wenhua Road , Shenyang 110016 , China
| | - Baodan Liu
- Shenyang National Laboratory for Materials Science (SYNL) , Institute of Metal Research (IMR), Chinese Academy of Sciences (CAS) , No. 72 Wenhua Road , Shenyang 110016 , China
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AlGaN Nanowires for Ultraviolet Light-Emitting: Recent Progress, Challenges, and Prospects. MICROMACHINES 2020; 11:mi11020125. [PMID: 31979274 PMCID: PMC7074201 DOI: 10.3390/mi11020125] [Citation(s) in RCA: 30] [Impact Index Per Article: 7.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 12/21/2019] [Revised: 01/19/2020] [Accepted: 01/22/2020] [Indexed: 12/12/2022]
Abstract
In this paper, we discuss the recent progress made in aluminum gallium nitride (AlGaN) nanowire ultraviolet (UV) light-emitting diodes (LEDs). The AlGaN nanowires used for such LED devices are mainly grown by molecular beam epitaxy (MBE) and metalorganic chemical vapor deposition (MOCVD); and various foreign substrates/templates have been investigated. Devices on Si so far exhibit the best performance, whereas devices on metal and graphene have also been investigated to mitigate various limitations of Si substrate, e.g., the UV light absorption. Moreover, patterned growth techniques have also been developed to grow AlGaN nanowire UV LED structures, in order to address issues with the spontaneously formed nanowires. Furthermore, to reduce the quantum confined Stark effect (QCSE), nonpolar AlGaN nanowire UV LEDs exploiting the nonpolar nanowire sidewalls have been demonstrated. With these recent developments, the prospects, together with the general challenges of AlGaN nanowire UV LEDs, are discussed in the end.
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38
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Shin W, Pandey A, Liu X, Sun Y, Mi Z. Photonic crystal tunnel junction deep ultraviolet light emitting diodes with enhanced light extraction efficiency. OPTICS EXPRESS 2019; 27:38413-38420. [PMID: 31878609 DOI: 10.1364/oe.380739] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/16/2019] [Accepted: 12/05/2019] [Indexed: 06/10/2023]
Abstract
We report on the demonstration of top emitting AlGaN tunnel junction deep ultraviolet (UV) light emitting didoes (LEDs) operating at ∼267 nm. We show, both theoretically and experimentally, that the light extraction efficiency can be enhanced by nearly a factor of two with the incorporation of AlGaN nanowire photonic crystal structures. A peak wall-plug efficiency (WPE) ∼3.5% and external quantum efficiency (EQE) ∼5.4% were measured for AlGaN LEDs directly on-wafer without any packaging. This work demonstrates a viable path for achieving high efficiency deep UV LEDs through the integration of AlGaN planar and nanoscale structures.
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39
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Barrigón E, Heurlin M, Bi Z, Monemar B, Samuelson L. Synthesis and Applications of III-V Nanowires. Chem Rev 2019; 119:9170-9220. [PMID: 31385696 DOI: 10.1021/acs.chemrev.9b00075] [Citation(s) in RCA: 75] [Impact Index Per Article: 15.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/27/2023]
Abstract
Low-dimensional semiconductor materials structures, where nanowires are needle-like one-dimensional examples, have developed into one of the most intensely studied fields of science and technology. The subarea described in this review is compound semiconductor nanowires, with the materials covered limited to III-V materials (like GaAs, InAs, GaP, InP,...) and III-nitride materials (GaN, InGaN, AlGaN,...). We review the way in which several innovative synthesis methods constitute the basis for the realization of highly controlled nanowires, and we combine this perspective with one of how the different families of nanowires can contribute to applications. One reason for the very intense research in this field is motivated by what they can offer to main-stream semiconductors, by which ultrahigh performing electronic (e.g., transistors) and photonic (e.g., photovoltaics, photodetectors or LEDs) technologies can be merged with silicon and CMOS. Other important aspects, also covered in the review, deals with synthesis methods that can lead to dramatic reduction of cost of fabrication and opportunities for up-scaling to mass production methods.
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Affiliation(s)
- Enrique Barrigón
- Division of Solid State Physics and NanoLund , Lund University , Box 118, 22100 Lund , Sweden
| | - Magnus Heurlin
- Division of Solid State Physics and NanoLund , Lund University , Box 118, 22100 Lund , Sweden.,Sol Voltaics AB , Scheelevägen 63 , 223 63 Lund , Sweden
| | - Zhaoxia Bi
- Division of Solid State Physics and NanoLund , Lund University , Box 118, 22100 Lund , Sweden
| | - Bo Monemar
- Division of Solid State Physics and NanoLund , Lund University , Box 118, 22100 Lund , Sweden
| | - Lars Samuelson
- Division of Solid State Physics and NanoLund , Lund University , Box 118, 22100 Lund , Sweden
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40
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Paul DJ, Hossain S, Baten MZ. Disorder induced rotational-symmetry breaking to control directionality of whispering gallery modes in circularly symmetric nanowire assembly. OPTICS EXPRESS 2019; 27:23645-23653. [PMID: 31510638 DOI: 10.1364/oe.27.023645] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/30/2019] [Accepted: 07/08/2019] [Indexed: 06/10/2023]
Abstract
Effect of disorder on the emission directionality of a whispering gallery mode resonator comprising of circularly symmetric nanowire array is investigated using finite-difference time-domain analysis technique. In spite of rotational symmetry breaking, whispering gallery mode-like isotropic emission characteristics are retained by the nanowire array up to a certain degree of spatial disorder. For higher degrees of randomness, Anderson localized resonant modes are obtained with unidirectional emission characteristics, though the beam direction remains unpredictable because of the underlying random-scattering process. This shortcoming is overcome by designing a system of correlated disorder where nanowire spacing is varied gradually along the preferred axis of unidirectionality. This system, in spite of its high degree of disorder, can effectively support high-Q whispering gallery modes with tunable unidirectional emission characteristics.
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41
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Chun SY, Yoo GY, Jeong S, Park SM, Eo YJ, Kim W, Do YR, Song JK. Dual wavelength lasing of InGaN/GaN axial-heterostructure nanorod lasers. NANOSCALE 2019; 11:14186-14193. [PMID: 31267116 DOI: 10.1039/c9nr03906f] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/09/2023]
Abstract
Optical confinement effects are investigated in InGaN/GaN axial-heterostructure nanolasers. Cylindrical nanorods with GaN/InGaN/GaN structures are prepared using combined processes of top-down and bottom-up approaches. The lasing of InGaN is observed at a low threshold (1 μJ cm-2), which is attributed to an efficient carrier transfer process from GaN to InGaN. The lasing of GaN is also found in the threshold range of 10-20 μJ cm-2 with a superlinear increase in emission intensity and high quality factors (Q = 1000), implying that dual wavelengths of lasing are tunable as a function of excitation intensity. The non-classical Fabry-Pérot modes suggest strong light-matter interactions in nanorods by optical confinement effects. The polarization of lasing indicates that the non-classical modes are in the identical transverse mode, which supports the formation of exciton-polaritons in nanorods. Polariton lasing in a single axial-heterostructure nanorod is observed for the first time, which proposes small-sized light sources with low threshold, polarized light, and tunable wavelengths in a single nanorod.
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Affiliation(s)
- So Yeon Chun
- Department of Chemistry, Kyung Hee University, Seoul 130-701, Korea.
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42
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Shetti NP, Bukkitgar SD, Reddy KR, Reddy CV, Aminabhavi TM. ZnO-based nanostructured electrodes for electrochemical sensors and biosensors in biomedical applications. Biosens Bioelectron 2019; 141:111417. [PMID: 31202187 DOI: 10.1016/j.bios.2019.111417] [Citation(s) in RCA: 143] [Impact Index Per Article: 28.6] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/10/2019] [Revised: 06/01/2019] [Accepted: 06/04/2019] [Indexed: 01/16/2023]
Abstract
Fascinating properties of ZnO nanostructures have created much interest due to their importance in health care and environmental monitoring. Current worldwide production and their wide range of applications signify ZnO to be a representative of multi-functional oxide material. Recent nanotechnological developments have stimulated the production of various forms of ZnO nanostructures such as nano-layers, nanoparticles, nanowires, etc. Due to their enhanced sensing properties, improved binding ability with biomolecules as well as biological activities have enabled them as suitable candidates for the fabrication of biosensor devices in the biomedical arena. In this review, the synthesis of ZnO nanostructures, mechanism of their interaction with biomolecules and their applications as sensors in health care area are discussed considering the biosensors for molecules with small molecular weight, infectious diseases, and pharmaceutical compounds.
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Affiliation(s)
- Nagaraj P Shetti
- Electrochemistry and Materials Group, Department of Chemistry, K. L. E. Institute of Technology, Affiliated to Visvesvaraya Technological University, Gokul, Hubballi, 580030, Karnataka, India.
| | - Shikandar D Bukkitgar
- Electrochemistry and Materials Group, Department of Chemistry, K. L. E. Institute of Technology, Affiliated to Visvesvaraya Technological University, Gokul, Hubballi, 580030, Karnataka, India
| | - Kakarla Raghava Reddy
- School of Chemical and Biomolecular Engineering, The University of Sydney, Sydney, NSW, 2006, Australia.
| | - Ch Venkata Reddy
- School of Mechanical Engineering, Yeungnam University, Gyeongsan, 712-749, South Korea
| | - Tejraj M Aminabhavi
- Department of Pharmaceuticals, Soniya College of Pharmacy, Dharwad, 580 002, Karnataka, India
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43
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Zhang Y, Davis G, Fonseka HA, Velichko A, Gustafsson A, Godde T, Saxena D, Aagesen M, Parkinson PW, Gott JA, Huo S, Sanchez AM, Mowbray DJ, Liu H. Highly Strained III-V-V Coaxial Nanowire Quantum Wells with Strong Carrier Confinement. ACS NANO 2019; 13:5931-5938. [PMID: 31067033 PMCID: PMC7007272 DOI: 10.1021/acsnano.9b01775] [Citation(s) in RCA: 4] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/05/2019] [Accepted: 05/08/2019] [Indexed: 06/01/2023]
Abstract
Coaxial quantum wells (QWs) are ideal candidates for nanowire (NW) lasers, providing strong carrier confinement and allowing close matching of the cavity mode and gain medium. We report a detailed structural and optical study and the observation of lasing for a mixed group-V GaAsP NW with GaAs QWs. This system offers a number of potential advantages in comparison to previously studied common group-V structures ( e. g., AlGaAs/GaAs) including highly strained binary GaAs QWs, the absence of a lower band gap core region, and deep carrier potential wells. Despite the large lattice mismatch (∼1.7%), it is possible to grow defect-free GaAs coaxial QWs with high optical quality. The large band gap difference results in strong carrier confinement, and the ability to apply a high degree of compressive strain to the GaAs QWs is also expected to be beneficial for laser performance. For a non-fully optimized structure containing three QWs, we achieve low-temperature lasing with a low external (internal) threshold of 20 (0.9) μJ/cm2/pulse. In addition, a very narrow lasing line width of ∼0.15 nm is observed. These results extend the NW laser structure to coaxial III-V-V QWs, which are highly suitable as the platform for NW emitters.
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Affiliation(s)
- Yunyan Zhang
- Department
of Electronic and Electrical Engineering, University College London, London WC1E 7JE, United Kingdom
| | - George Davis
- Department
of Physics and Astronomy and the Photon Science Institute, University of Sheffield, Sheffield S3 7RH, United Kingdom
| | - H. Aruni Fonseka
- Department
of Physics, University of Warwick, Coventry CV4 7AL, United Kingdom
| | - Anton Velichko
- Department
of Physics and Astronomy and the Photon Science Institute, University of Sheffield, Sheffield S3 7RH, United Kingdom
| | - Anders Gustafsson
- Solid
State Physics and NanoLund, Lund University, Box 118, SE-221 00 Lund, Sweden
| | - Tillmann Godde
- Department
of Physics and Astronomy and the Photon Science Institute, University of Sheffield, Sheffield S3 7RH, United Kingdom
| | - Dhruv Saxena
- The
Blackett Laboratory, Department of Physics, Imperial College London, London SW7 2AZ, United Kingdom
| | - Martin Aagesen
- Danish
Defence Research Center, Lautrupbjerg 1-5, 2750 Ballerup, Denmark
| | - Patrick W. Parkinson
- School
of Physics and Astronomy and the Photon Science Institute, University of Manchester, Manchester M13 9PL, United Kingdom
| | - James A. Gott
- Department
of Physics, University of Warwick, Coventry CV4 7AL, United Kingdom
| | - Suguo Huo
- London
Centre for Nanotechnology, University College
London, London WC1H 0AH, United Kingdom
| | - Ana M. Sanchez
- Department
of Physics, University of Warwick, Coventry CV4 7AL, United Kingdom
| | - David J. Mowbray
- Department
of Physics and Astronomy and the Photon Science Institute, University of Sheffield, Sheffield S3 7RH, United Kingdom
| | - Huiyun Liu
- Department
of Electronic and Electrical Engineering, University College London, London WC1E 7JE, United Kingdom
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44
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Zhang Y, Saxena D, Aagesen M, Liu H. Toward electrically driven semiconductor nanowire lasers. NANOTECHNOLOGY 2019; 30:192002. [PMID: 30658345 DOI: 10.1088/1361-6528/ab000d] [Citation(s) in RCA: 7] [Impact Index Per Article: 1.4] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/09/2023]
Abstract
Semiconductor nanowire (NW) lasers are highly promising for making new-generation coherent light sources with the advantages of ultra-small size, high efficiency, easy integration and low cost. Over the past 15 years, this area of research has been developing rapidly, with extensive reports of optically pumped lasing in various inorganic and organic semiconductor NWs. Motivated by these developments, substantial efforts are being made to make NW lasers electrically pumped, which is necessary for their practical implementation. In this review, we first categorize NW lasers according to their lasing wavelength and wavelength tunability. Then, we summarize the methods used for achieving single-mode lasing in NWs. After that, we review reports on lasing threshold reduction and the realization of electrically pumped NW lasers. Finally, we offer our perspective on future improvements and trends.
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Affiliation(s)
- Yunyan Zhang
- Department of Electronic and Electrical Engineering, University College London, Torrington Place, London WC1E 7JE, United Kingdom
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45
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Ma C, Feng M, Wang J, Zhou R, Sun Q, Liu J, Huang Y, Gao H, Zhou Y, Yang H. Fabrication of AlGaN nanostructures by nanolithography on ultraviolet LEDs grown on Si substrates. NANOTECHNOLOGY 2019; 30:185201. [PMID: 30630141 DOI: 10.1088/1361-6528/aafd3d] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/09/2023]
Abstract
AlGaN nanostructures have many applications because of their interesting and unique properties. Here we report a simple fabrication method of AlGaN nanostructures by nanolithography on ultraviolet (UV) LEDs grown on Si substrates. We also studied the effects of various AlGaN nanostructure arrays on the performance of the UV (370 nm) thin-film LEDs with an embedded n-type contact. The output power of the UV LEDs with nanostructures was enhanced by 3.9 times compared to the flat UV LEDs, while no penalty was induced for the electrical characteristics of the UV LEDs. Additionally, the far-field radiation pattern of the UV LEDs with nanostructures showed much better directionality and a much stronger intensity than the flat UV LEDs, which would be of great benefit to directional UV curing applications.
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Affiliation(s)
- Chuanfei Ma
- Key Laboratory of Nano-devices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences (CAS), Suzhou 215123, People's Republic of China. School of Nano Technology and Nano Bionics, University of Science and Technology of China, Hefei, 230026, People's Republic of China
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46
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Zhao S, Wang R, Chu S, Mi Z. Molecular Beam Epitaxy of III-Nitride Nanowires: Emerging Applications From Deep-Ultraviolet Light Emitters and Micro-LEDs to Artificial Photosynthesis. IEEE NANOTECHNOLOGY MAGAZINE 2019. [DOI: 10.1109/mnano.2019.2891370] [Citation(s) in RCA: 8] [Impact Index Per Article: 1.6] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/09/2022]
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47
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Gholipour B, Piccinotti D, Karvounis A, MacDonald KF, Zheludev NI. Reconfigurable Ultraviolet and High-Energy Visible Dielectric Metamaterials. NANO LETTERS 2019; 19:1643-1648. [PMID: 30721072 DOI: 10.1021/acs.nanolett.8b04576] [Citation(s) in RCA: 11] [Impact Index Per Article: 2.2] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/19/2023]
Abstract
Photonic materials with tunable and switchable ultraviolet (UV) to high-energy visible (HEV) optical properties may benefit applications such as sensing, high-density optical memory, beam-steering, adaptive optics, and light modulation. Here, for the first time we demonstrate a nonvolatile switchable dielectric metamaterial operating in the UV-HEV spectral range. Nanograting metamaterials in a layered composite of low-loss ZnS/SiO2 and the chalcogenide phase-change medium germanium-antimony-telluride (Ge2Sb2Te5 or GST) exhibit reflection resonances at UV-HEV wavelengths that are substantially modified by light-induced (amorphous-crystalline) phase transitions in the chalcogenide layer. Despite the presence of the lossy GST, resonance quality factors up to Q ∼ 15 are ensured by the transparency (low losses) of ZnS/SiO2 in the UV-HEV spectral range and values of Q increase as the refractive index of Ge2Sb2Te5 decreases, upon crystallization. Notably, however, this switching leaves resonance spectral positions unchanged.
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Affiliation(s)
- Behrad Gholipour
- Department of Electrical and Computer Engineering , University of Alberta , Edmonton , Canada
| | | | | | | | - Nikolay I Zheludev
- Centre for Disruptive Photonic Technologies, School of Physical and Mathematical Sciences and The Photonics Institute , Nanyang Technological University , 637371 , Singapore
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48
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Steidl M, Schwarzburg K, Galiana B, Kups T, Supplie O, Kleinschmidt P, Lilienkamp G, Hannappel T. MOVPE growth of GaP/GaPN core-shell nanowires: N incorporation, morphology and crystal structure. NANOTECHNOLOGY 2019; 30:104002. [PMID: 30523951 DOI: 10.1088/1361-6528/aaf607] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/09/2023]
Abstract
Dilute nitride III-V nanowires (NWs) possess great potential as building blocks in future optoelectronical and electrochemical devices. Here, we provide evidence for the growth of GaP/GaPN core-shell NWs via metalorganic vapor phase epitaxy, both on GaP(111)B and on GaP/Si(111) hetero-substrates. The NW morphology meets the common needs for use in applications, i.e. they are straight and vertically oriented to the substrate as well as homogeneous in length. Moreover, no parasitical island growth is observed. Nitrogen was found to be incorporated on group V sites as determined from transmission electron microscopy (TEM) and Raman spectroscopy. Together with the incorporation of N, the NWs exhibit strong photoluminescence in the visible range, which we attribute to radiative recombination at N-related deep states. Independently of the N incorporation, a peculiar facet formation was found, with {110} facets at the top and {112} at the bottom of the NWs. TEM reveals that this phenomenon is related to different stacking fault densities within the zinc blende structure, which lead to different effective surface energies for the bottom and the top of the NWs.
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Affiliation(s)
- Matthias Steidl
- Department of Photovoltaics, Institute of Physics and Institute of Micro- and Nanotechnologies, Technische Universität Ilmenau, D-98693, Ilmenau, Germany
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49
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Le BH, Liu X, Tran NH, Zhao S, Mi Z. An electrically injected AlGaN nanowire defect-free photonic crystal ultraviolet laser. OPTICS EXPRESS 2019; 27:5843-5850. [PMID: 30876179 DOI: 10.1364/oe.27.005843] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/14/2018] [Accepted: 11/09/2018] [Indexed: 06/09/2023]
Abstract
We report on the demonstration of an electrically injected AlGaN nanowire photonic crystal laser that can operate in the ultraviolet spectral range. The nanowire heterostructures were grown on sapphire substrate using a site-controlled selective area growth process. By exploiting the topological high-Q resonance of a defect-free nanowire photonic crystal, we have demonstrated electrically pumped lasers that can operate at 369.5 nm with a relatively low threshold current density of ~2.1 kA/cm2 under continuous wave operation at room-temperature. This work provides a promising approach for achieving low threshold semiconductor laser diodes operating in the UV spectral range that were previously difficult.
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50
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Huang J, Niu M, Sun M, Su X, Xu K. Investigation of hydride vapor phase epitaxial growth of AlN on sputtered AlN buffer layers. CrystEngComm 2019. [DOI: 10.1039/c8ce02192a] [Citation(s) in RCA: 12] [Impact Index Per Article: 2.4] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
To improve the crystal quality and suppress the cracks of HVPE-AlN films, annealed sputtered AlN templates have been utilized.
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Affiliation(s)
- Jun Huang
- Suzhou Institute of Nano-tech and Nano-bionics, CAS
- Suzhou 215125
- People's Republic of China
| | - MuTong Niu
- Suzhou Institute of Nano-tech and Nano-bionics, CAS
- Suzhou 215125
- People's Republic of China
| | - MaoSong Sun
- Suzhou Institute of Nano-tech and Nano-bionics, CAS
- Suzhou 215125
- People's Republic of China
| | - XuJun Su
- Suzhou Institute of Nano-tech and Nano-bionics, CAS
- Suzhou 215125
- People's Republic of China
| | - Ke Xu
- Suzhou Institute of Nano-tech and Nano-bionics, CAS
- Suzhou 215125
- People's Republic of China
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