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Noh K, Kwak H, Son J, Kim S, Um M, Kang M, Kim D, Ji W, Lee J, Jo H, Woo J, Lee HM, Kim S. Retention-aware zero-shifting technique for Tiki-Taka algorithm-based analog deep learning accelerator. SCIENCE ADVANCES 2024; 10:eadl3350. [PMID: 38875324 PMCID: PMC11177898 DOI: 10.1126/sciadv.adl3350] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/18/2023] [Accepted: 05/10/2024] [Indexed: 06/16/2024]
Abstract
We present the fabrication of 4 K-scale electrochemical random-access memory (ECRAM) cross-point arrays for analog neural network training accelerator and an electrical characteristic of an 8 × 8 ECRAM array with a 100% yield, showing excellent switching characteristics, low cycle-to-cycle, and device-to-device variations. Leveraging the advances of the ECRAM array, we showcase its efficacy in neural network training using the Tiki-Taka version 2 algorithm (TTv2) tailored for non-ideal analog memory devices. Through an experimental study using ECRAM devices, we investigate the influence of retention characteristics on the training performance of TTv2, revealing that the relative location of the retention convergence point critically determines the available weight range and, consequently, affects the training accuracy. We propose a retention-aware zero-shifting technique designed to optimize neural network training performance, particularly in scenarios involving cross-point devices with limited retention times. This technique ensures robust and efficient analog neural network training despite the practical constraints posed by analog cross-point devices.
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Affiliation(s)
- Kyungmi Noh
- Department of Materials Science and Engineering, Pohang University of Science and Technology, Pohang 37673, Republic of Korea
| | - Hyunjeong Kwak
- Department of Materials Science and Engineering, Pohang University of Science and Technology, Pohang 37673, Republic of Korea
| | - Jeonghoon Son
- Department of Materials Science and Engineering, Pohang University of Science and Technology, Pohang 37673, Republic of Korea
| | - Seungkun Kim
- Department of Materials Science and Engineering, Pohang University of Science and Technology, Pohang 37673, Republic of Korea
| | - Minseong Um
- School of Electrical Engineering, Korea University, Seoul 02841, Republic of Korea
| | - Minil Kang
- Department of Semiconductor System Engineering, Korea University, Seoul 02841, Republic of Korea
| | - Doyoon Kim
- Department of Materials Science and Engineering, Pohang University of Science and Technology, Pohang 37673, Republic of Korea
| | - Wonjae Ji
- Department of Materials Science and Engineering, Pohang University of Science and Technology, Pohang 37673, Republic of Korea
| | - Junyong Lee
- Department of Materials Science and Engineering, Pohang University of Science and Technology, Pohang 37673, Republic of Korea
| | - HwiJeong Jo
- School of Electrical Engineering, Korea University, Seoul 02841, Republic of Korea
| | - Jiyong Woo
- Department of Electronics Engineering, Kyungpook National University, Daegu 41566, Republic of Korea
| | - Hyung-Min Lee
- School of Electrical Engineering, Korea University, Seoul 02841, Republic of Korea
| | - Seyoung Kim
- Department of Materials Science and Engineering, Pohang University of Science and Technology, Pohang 37673, Republic of Korea
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Wang G, Wang C, Zhang X, Li Z, Zhou J, Sun Z. Machine learning interatomic potential: Bridge the gap between small-scale models and realistic device-scale simulations. iScience 2024; 27:109673. [PMID: 38646181 PMCID: PMC11033164 DOI: 10.1016/j.isci.2024.109673] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 04/23/2024] Open
Abstract
Machine learning interatomic potential (MLIP) overcomes the challenges of high computational costs in density-functional theory and the relatively low accuracy in classical large-scale molecular dynamics, facilitating more efficient and precise simulations in materials research and design. In this review, the current state of the four essential stages of MLIP is discussed, including data generation methods, material structure descriptors, six unique machine learning algorithms, and available software. Furthermore, the applications of MLIP in various fields are investigated, notably in phase-change memory materials, structure searching, material properties predicting, and the pre-trained universal models. Eventually, the future perspectives, consisting of standard datasets, transferability, generalization, and trade-off between accuracy and complexity in MLIPs, are reported.
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Affiliation(s)
- Guanjie Wang
- School of Materials Science and Engineering, Beihang University, Beijing 100191, China
- School of Integrated Circuit Science and Engineering, Beihang University, Beijing 100191, China
| | - Changrui Wang
- School of Materials Science and Engineering, Beihang University, Beijing 100191, China
| | - Xuanguang Zhang
- School of Materials Science and Engineering, Beihang University, Beijing 100191, China
| | - Zefeng Li
- School of Materials Science and Engineering, Beihang University, Beijing 100191, China
| | - Jian Zhou
- School of Materials Science and Engineering, Beihang University, Beijing 100191, China
| | - Zhimei Sun
- School of Materials Science and Engineering, Beihang University, Beijing 100191, China
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Song CM, Kim D, Lee S, Kwon HJ. Ferroelectric 2D SnS 2 Analog Synaptic FET. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2024; 11:e2308588. [PMID: 38375965 DOI: 10.1002/advs.202308588] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/09/2023] [Revised: 01/25/2024] [Indexed: 02/21/2024]
Abstract
In this study, the development and characterization of 2D ferroelectric field-effect transistor (2D FeFET) devices are presented, utilizing nanoscale ferroelectric HfZrO2 (HZO) and 2D semiconductors. The fabricated device demonstrated multi-level data storage capabilities. It successfully emulated essential biological characteristics, including excitatory/inhibitory postsynaptic currents (EPSC/IPSC), Pair-Pulse Facilitation (PPF), and Spike-Timing Dependent Plasticity (STDP). Extensive endurance tests ensured robust stability (107 switching cycles, 105 s (extrapolated to 10 years)), excellent linearity, and high Gmax/Gmin ratio (>105), all of which are essential for realizing multi-level data states (>7-bit operation). Beyond mimicking synaptic functionalities, the device achieved a pattern recognition accuracy of ≈94% on the Modified National Institute of Standards and Technology (MNIST) handwritten dataset when incorporated into a neural network, demonstrating its potential as an effective component in neuromorphic systems. The successful implementation of the 2D FeFET device paves the way for the development of high-efficiency, ultralow-power neuromorphic hardware which is in sub-femtojoule (48 aJ/spike) and fast response (1 µs), which is 104 folds faster than human synapse (≈10 ms). The results of the research underline the potential of nanoscale ferroelectric and 2D materials in building the next generation of artificial intelligence technologies.
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Affiliation(s)
- Chong-Myeong Song
- Department of Electrical Engineering and Computer Science, Daegu Gyeongbuk Institute of Science and Technology (DGIST), Daegu, 42988, South Korea
| | - Dongha Kim
- Department of Physics and Chemistry, DGIST, Daegu, 42988, South Korea
| | - Shinbuhm Lee
- Department of Physics and Chemistry, DGIST, Daegu, 42988, South Korea
| | - Hyuk-Jun Kwon
- Department of Electrical Engineering and Computer Science, Daegu Gyeongbuk Institute of Science and Technology (DGIST), Daegu, 42988, South Korea
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Guido R, Lu H, Lomenzo PD, Mikolajick T, Gruverman A, Schroeder U. Kinetics of N- to M-Polar Switching in Ferroelectric Al 1-xSc xN Capacitors. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2024; 11:e2308797. [PMID: 38355302 DOI: 10.1002/advs.202308797] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/30/2023] [Indexed: 02/16/2024]
Abstract
Ferroelectric wurtzite-type aluminum scandium nitride (Al1-xScxN) presents unique properties that can enhance the performance of non-volatile memory technologies. The realization of the full potential of Al1-xScxN requires a comprehensive understanding of the mechanism of polarization reversal and domain structure dynamics involved in the ferroelectric switching process. In this work, transient current integration measurements performed by a pulse switching method are combined with domain imaging by piezoresponse force microscopy (PFM) to investigate the kinetics of domain nucleation and wall motion during polarization reversal in Al0.85Sc0.15N capacitors. In the studied electric field range (from 4.4 to 5.6 MV cm-1), ferroelectric switching proceeds via domain nucleation and wall movement. The currently available phenomenological models are shown to not fully capture all the details of the complex dynamics of polarization reversal in Al0.85Sc0.15N. PFM reveals a non-linear increase of both domain nucleation rate and lateral wall velocity during the switching process, as well as the dependency of the domain pattern on the polarization reversal direction. A continuously faster N- to M-polar switching upon cycling is reported and ascribed to an increasing number of M-polar nucleation sites and density of domain walls.
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Affiliation(s)
- Roberto Guido
- NaMLab gGmbH, Noethnizer Strasse 64a, 01187, Dresden, Germany
- Chair of Nanoelectronics, Technische Universität Dresden, Noethnizer Strasse 64, 01187, Dresden, Germany
| | - Haidong Lu
- Department of Physics and Astronomy, University of Nebraska, Lincoln, NE, 68588, USA
| | | | - Thomas Mikolajick
- NaMLab gGmbH, Noethnizer Strasse 64a, 01187, Dresden, Germany
- Chair of Nanoelectronics, Technische Universität Dresden, Noethnizer Strasse 64, 01187, Dresden, Germany
| | - Alexei Gruverman
- Department of Physics and Astronomy, University of Nebraska, Lincoln, NE, 68588, USA
| | - Uwe Schroeder
- NaMLab gGmbH, Noethnizer Strasse 64a, 01187, Dresden, Germany
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He L, Lang S, Zhang W, Song S, Lyu J, Gong J. First-Principles Prediction of High and Low Resistance States in Ta/h-BN/Ta Atomristor. NANOMATERIALS (BASEL, SWITZERLAND) 2024; 14:612. [PMID: 38607146 PMCID: PMC11013407 DOI: 10.3390/nano14070612] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/13/2024] [Revised: 03/13/2024] [Accepted: 03/20/2024] [Indexed: 04/13/2024]
Abstract
Two-dimensional (2D) materials have received significant attention for their potential use in next-generation electronics, particularly in nonvolatile memory and neuromorphic computing. This is due to their simple metal-insulator-metal (MIM) sandwiched structure, excellent switching performance, high-density capability, and low power consumption. In this work, using comprehensive material simulations and device modeling, the thinnest monolayer hexagonal boron nitride (h-BN) atomristor is studied by using a MIM configuration with Ta electrodes. Our first-principles calculations predicted both a high resistance state (HRS) and a low resistance state (LRS) in this device. We observed that the presence of van der Waals (vdW) gaps between the Ta electrodes and monolayer h-BN with a boron vacancy (VB) contributes to the HRS. The combination of metal electrode contact and the adsorption of Ta atoms onto a single VB defect (TaB) can alter the interface barrier between the electrode and dielectric layer, as well as create band gap states within the band gap of monolayer h-BN. These band gap states can shorten the effective tunneling path for electron transport from the left electrode to the right electrode, resulting in an increase in the current transmission coefficient of the LRS. This resistive switching mechanism in monolayer h-BN atomristors can serve as a theoretical reference for device design and optimization, making them promising for the development of atomristor technology with ultra-high integration density and ultra-low power consumption.
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Affiliation(s)
- Lan He
- School of Physical Science and Technology, Inner Mongolia University, Hohhot 010021, China
| | - Shuai Lang
- School of Physical Science and Technology, Inner Mongolia University, Hohhot 010021, China
| | - Wei Zhang
- School of Physical Science and Technology, Inner Mongolia University, Hohhot 010021, China
| | - Shun Song
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
| | - Juan Lyu
- School of Physical Science and Technology, Inner Mongolia University, Hohhot 010021, China
| | - Jian Gong
- School of Physical Science and Technology, Inner Mongolia University, Hohhot 010021, China
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Zhao J, Zhao Z, Song Z, Zhu M. GeSe ovonic threshold switch: the impact of functional layer thickness and device size. Sci Rep 2024; 14:6685. [PMID: 38509187 PMCID: PMC10954710 DOI: 10.1038/s41598-024-57029-7] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 12/19/2023] [Accepted: 03/12/2024] [Indexed: 03/22/2024] Open
Abstract
Three-dimensional phase change memory (3D PCM), possessing fast-speed, high-density and nonvolatility, has been successfully commercialized as storage class memory. A complete PCM device is composed of a memory cell and an associated ovonic threshold switch (OTS) device, which effectively resolves the leakage current issue in the crossbar array. The OTS materials are chalcogenide glasses consisting of chalcogens such as Te, Se and S as central elements, represented by GeTe6, GeSe and GeS. Among them, GeSe-based OTS materials are widely utilized in commercial 3D PCM, their scalability, however, has not been thoroughly investigated. Here, we explore the miniaturization of GeSe OTS selector, including functional layer thickness scalability and device size scalability. The threshold switching voltage of the GeSe OTS device almost lineally decreases with the thinning of the thickness, whereas it hardly changes with the device size. This indicates that the threshold switching behavior is triggered by the electric field, and the threshold switching field of the GeSe OTS selector is approximately 105 V/μm, regardless of the change in film thickness or device size. Systematically analyzing the threshold switching field of Ge-S and Ge-Te OTSs, we find that the threshold switching field of the OTS device is larger than 75 V/μm, significantly higher than PCM devices (8.1-56 V/μm), such as traditional Ge2Sb2Te5, Ag-In-Sb-Te, etc. Moreover, the required electric field is highly correlated with the optical bandgap. Our findings not only serve to optimize GeSe-based OTS device, but also may pave the approach for exploring OTS materials in chalcogenide alloys.
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Affiliation(s)
- Jiayi Zhao
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Micro-System and Information Technology, Chinese Academy of Sciences, Shanghai, 200050, China
- University of Chinese Academy of Sciences, Beijing, 100029, China
| | - Zihao Zhao
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Micro-System and Information Technology, Chinese Academy of Sciences, Shanghai, 200050, China
- University of Chinese Academy of Sciences, Beijing, 100029, China
| | - Zhitang Song
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Micro-System and Information Technology, Chinese Academy of Sciences, Shanghai, 200050, China
| | - Min Zhu
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Micro-System and Information Technology, Chinese Academy of Sciences, Shanghai, 200050, China.
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Qi M, Xu R, Ding G, Zhou K, Zhu S, Leng Y, Sun T, Zhou Y, Han ST. An in-sensor humidity computing system for contactless human-computer interaction. MATERIALS HORIZONS 2024; 11:939-948. [PMID: 38078356 DOI: 10.1039/d3mh01734f] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 12/23/2023]
Abstract
Being capable of processing large amounts of redundant data and decreasing power consumption, in-sensor computing approaches play significant roles in neuromorphic computing and are attracting increasing interest in perceptual information processing. Herein, we proposed a high performance humidity-sensitive memristor based on a Ti/graphene oxide (GO)/HfOx/Pt structure and verified its potential for application in remote health management and contactless human-machine interfaces. Since GO possesses abundant hydrophilic groups (carbonyl, epoxide, and hydroxyl), the memristor shows a high humidity sensitivity, fast response, and wide response range. By utilizing the proton-modulated redox reaction, humidity exposure to the memristor induces a dynamic change in the switching between high and low resistance states, ensuring essential synaptic learning functions, such as paired-pulse facilitation, spike number-dependent plasticity, and spike amplitude-dependent plasticity. More importantly, based on the humidity-induced salient features originating from the abundant hydrophilic functional groups in GO, we have implemented a noncontact human-machine interface utilizing the respiratory mode in humans, demonstrating the potential of promoting health monitoring applications and effectively blocking virus transmission. In addition, the high recognition accuracy of contactless handwriting in a 5 × 5 array artificial neural network was successfully achieved, which is attributed to the excellent emulated synaptic behaviors. This study provides a feasible method to develop an excellent humidity-sensitive memristor for constructing efficient in-sensor computing for application in health management and contactless human-computer interaction.
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Affiliation(s)
- Meng Qi
- Institute for Microscale Optoelectronics, Shenzhen University, Shenzhen 518060, P. R. China
| | - Runze Xu
- Institute for Microscale Optoelectronics, Shenzhen University, Shenzhen 518060, P. R. China
| | - Guanglong Ding
- Institute for Advanced Study, Shenzhen University, Shenzhen 518060, P. R. China
| | - Kui Zhou
- Institute for Advanced Study, Shenzhen University, Shenzhen 518060, P. R. China
| | - Shirui Zhu
- Institute for Microscale Optoelectronics, Shenzhen University, Shenzhen 518060, P. R. China
| | - Yanbing Leng
- Institute for Microscale Optoelectronics, Shenzhen University, Shenzhen 518060, P. R. China
| | - Tao Sun
- Institute for Microscale Optoelectronics, Shenzhen University, Shenzhen 518060, P. R. China
| | - Ye Zhou
- Institute for Advanced Study, Shenzhen University, Shenzhen 518060, P. R. China
| | - Su-Ting Han
- Department of Applied Biology and Chemical Technology, The Hong Kong Polytechnic University, Hong Kong, China.
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Li S, Liao K, Bi Y, Ding K, Sun E, Zhang C, Wang L, Hu F, Xiao M, Wang X. Optical readout of charge carriers stored in a 2D memory cell of monolayer WSe 2. NANOSCALE 2024; 16:3668-3675. [PMID: 38289585 DOI: 10.1039/d3nr04263d] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 02/16/2024]
Abstract
Owing to their superior charge retaining and transport characteristics, 2D transition metal dichalcogenides are investigated for practical applications in various memory-cell structures. Herein, we fabricated a quasi-one-terminal 2D memory cell by partially depositing a WSe2 monolayer on an Au electrode, which can be manipulated to achieve efficient charge injection upon the application or removal of external bias. Furthermore, the amount of charge carriers stored in the memory cell could be optically probed because of its close correlation with the fluorescence efficiency of WSe2, allowing us to achieve an electron retention time of ∼300 s at the cryogenic temperature of 4 K. Accordingly, the simplified device structure and the non-contact optical readout of the stored charge carriers present new research opportunities for 2D memory cells in terms of both fundamental mechanism studies and practical development for integrated nanophotonic devices.
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Affiliation(s)
- Si Li
- National Laboratory of Solid State Microstructures, School of Physics, and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China.
| | - Kan Liao
- National Laboratory of Solid State Microstructures, School of Physics, and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China.
- School of Flexible Electronics (Future Technologies) & Institute of Advanced Materials (IAM), Key Laboratory of Flexible Electronics (KLOFE), and Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing Tech University (NanjingTech), Nanjing 211816, China.
| | - Yanfeng Bi
- National Laboratory of Solid State Microstructures, School of Physics, and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China.
| | - Ke Ding
- National Laboratory of Solid State Microstructures, School of Physics, and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China.
| | - Encheng Sun
- National Laboratory of Solid State Microstructures, School of Physics, and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China.
| | - Chunfeng Zhang
- National Laboratory of Solid State Microstructures, School of Physics, and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China.
| | - Lin Wang
- School of Flexible Electronics (Future Technologies) & Institute of Advanced Materials (IAM), Key Laboratory of Flexible Electronics (KLOFE), and Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing Tech University (NanjingTech), Nanjing 211816, China.
| | - Fengrui Hu
- College of Engineering and Applied Sciences, and MOE Key Laboratory of Intelligent Optical Sensing and Manipulation, Nanjing University, Nanjing 210093, China.
| | - Min Xiao
- National Laboratory of Solid State Microstructures, School of Physics, and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China.
- Department of Physics, University of Arkansas, Fayetteville, Arkansas 72701, USA
| | - Xiaoyong Wang
- National Laboratory of Solid State Microstructures, School of Physics, and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China.
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Kwon JY, Kim JE, Kim JS, Chun SY, Soh K, Yoon JH. Artificial sensory system based on memristive devices. EXPLORATION (BEIJING, CHINA) 2024; 4:20220162. [PMID: 38854486 PMCID: PMC10867403 DOI: 10.1002/exp.20220162] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 07/20/2023] [Accepted: 10/16/2023] [Indexed: 06/11/2024]
Abstract
In the biological nervous system, the integration and cooperation of parallel system of receptors, neurons, and synapses allow efficient detection and processing of intricate and disordered external information. Such systems acquire and process environmental data in real-time, efficiently handling complex tasks with minimal energy consumption. Memristors can mimic typical biological receptors, neurons, and synapses by implementing key features of neuronal signal-processing functions such as selective adaption in receptors, leaky integrate-and-fire in neurons, and synaptic plasticity in synapses. External stimuli are sensitively detected and filtered by "artificial receptors," encoded into spike signals via "artificial neurons," and integrated and stored through "artificial synapses." The high operational speed, low power consumption, and superior scalability of memristive devices make their integration with high-performance sensors a promising approach for creating integrated artificial sensory systems. These integrated systems can extract useful data from a large volume of raw data, facilitating real-time detection and processing of environmental information. This review explores the recent advances in memristor-based artificial sensory systems. The authors begin with the requirements of artificial sensory elements and then present an in-depth review of such elements demonstrated by memristive devices. Finally, the major challenges and opportunities in the development of memristor-based artificial sensory systems are discussed.
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Affiliation(s)
- Ju Young Kwon
- Electronic Materials Research CenterKorea Institute of Science and Technology (KIST)SeoulRepublic of Korea
| | - Ji Eun Kim
- Electronic Materials Research CenterKorea Institute of Science and Technology (KIST)SeoulRepublic of Korea
- Department of Materials Science and EngineeringKorea UniversitySeoulRepublic of Korea
| | - Jong Sung Kim
- Electronic Materials Research CenterKorea Institute of Science and Technology (KIST)SeoulRepublic of Korea
- Department of Materials Science and EngineeringKorea UniversitySeoulRepublic of Korea
| | - Suk Yeop Chun
- Electronic Materials Research CenterKorea Institute of Science and Technology (KIST)SeoulRepublic of Korea
- KU‐KIST Graduate School of Converging Science and TechnologyKorea UniversitySeoulRepublic of Korea
| | - Keunho Soh
- Electronic Materials Research CenterKorea Institute of Science and Technology (KIST)SeoulRepublic of Korea
- Department of Materials Science and EngineeringKorea UniversitySeoulRepublic of Korea
| | - Jung Ho Yoon
- Electronic Materials Research CenterKorea Institute of Science and Technology (KIST)SeoulRepublic of Korea
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10
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Jeon J, Cho K, Kim S. Read Operation Mechanism of Feedback Field-Effect Transistors with Quasi-Nonvolatile Memory States. NANOMATERIALS (BASEL, SWITZERLAND) 2024; 14:210. [PMID: 38251173 PMCID: PMC10819914 DOI: 10.3390/nano14020210] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/26/2023] [Revised: 01/16/2024] [Accepted: 01/17/2024] [Indexed: 01/23/2024]
Abstract
In this study, the read operation of feedback field-effect transistors (FBFETs) with quasi-nonvolatile memory states was analyzed using a device simulator. For FBFETs, write pulses of 40 ns formed potential barriers in their channels, and charge carriers were accumulated (depleted) in these channels, generating the memory state "State 1 (State 0)". Read pulses of 40 ns read these states with a retention time of 3 s, and the potential barrier formation and carrier accumulation were influenced by these read pulses. The potential barriers were analyzed, using junction voltage and current density to explore the memory states. Moreover, FBFETs exhibited nondestructive readout characteristics during the read operation, which depended on the read voltage and pulse width.
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Affiliation(s)
| | - Kyoungah Cho
- Department of Electrical Engineering, Korea University, 145 Anam-ro, Seongbuk-gu, Seoul 02841, Republic of Korea;
| | - Sangsig Kim
- Department of Electrical Engineering, Korea University, 145 Anam-ro, Seongbuk-gu, Seoul 02841, Republic of Korea;
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11
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Sun B, Chen Y, Zhou G, Cao Z, Yang C, Du J, Chen X, Shao J. Memristor-Based Artificial Chips. ACS NANO 2024; 18:14-27. [PMID: 38153841 DOI: 10.1021/acsnano.3c07384] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 12/30/2023]
Abstract
Memristors, promising nanoelectronic devices with in-memory resistive switching behavior that is assembled with a physically integrated core processing unit (CPU) and memory unit and even possesses highly possible multistate electrical behavior, could avoid the von Neumann bottleneck of traditional computing devices and show a highly efficient ability of parallel computation and high information storage. These advantages position them as potential candidates for future data-centric computing requirements and add remarkable vigor to the research of next-generation artificial intelligence (AI) systems, particularly those that involve brain-like intelligence applications. This work provides an overview of the evolution of memristor-based devices, from their initial use in creating artificial synapses and neural networks to their application in developing advanced AI systems and brain-like chips. It offers a broad perspective of the key device primitives enabling their special applications from the view of materials, nanostructure, and mechanism models. We highlight these demonstrations of memristor-based nanoelectronic devices that have potential for use in the field of brain-like AI, point out the existing challenges of memristor-based nanodevices toward brain-like chips, and propose the guiding principle and promising outlook for future device promotion and system optimization in the biomedical AI field.
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Affiliation(s)
- Bai Sun
- National Local Joint Engineering Research Center for Precision Surgery & Regenerative Medicine, the First Affiliated Hospital of Xi'an Jiaotong University, Xi'an, Shaanxi 710049, People's Republic of China
- Department of Hepatobiliary Surgery, the First Affiliated Hospital of Xi'an Jiaotong University, Xi'an, Shaanxi 710049, People's Republic of China
- Micro-and Nano-technology Research Center, State Key Laboratory for Manufacturing Systems Engineering, Xi'an Jiaotong University, Xi'an, Shaanxi 710049, People's Republic of China
- Frontier Institute of Science and Technology (FIST), Xi'an Jiaotong University, Xi'an, Shaanxi 710049, China
| | - Yuanzheng Chen
- School of Physical Science and Technology, Key Laboratory of Advanced Technology of Materials, Southwest Jiaotong University, Chengdu, Sichuan 610031, People's Republic of China
| | - Guangdong Zhou
- College of Artificial Intelligence, Brain-inspired Computing & Intelligent Control of Chongqing Key Lab, Southwest University, Chongqing 400715, People's Republic of China
| | - Zelin Cao
- National Local Joint Engineering Research Center for Precision Surgery & Regenerative Medicine, the First Affiliated Hospital of Xi'an Jiaotong University, Xi'an, Shaanxi 710049, People's Republic of China
- Department of Hepatobiliary Surgery, the First Affiliated Hospital of Xi'an Jiaotong University, Xi'an, Shaanxi 710049, People's Republic of China
- Micro-and Nano-technology Research Center, State Key Laboratory for Manufacturing Systems Engineering, Xi'an Jiaotong University, Xi'an, Shaanxi 710049, People's Republic of China
- Frontier Institute of Science and Technology (FIST), Xi'an Jiaotong University, Xi'an, Shaanxi 710049, China
| | - Chuan Yang
- School of Physical Science and Technology, Key Laboratory of Advanced Technology of Materials, Southwest Jiaotong University, Chengdu, Sichuan 610031, People's Republic of China
| | - Junmei Du
- School of Physical Science and Technology, Key Laboratory of Advanced Technology of Materials, Southwest Jiaotong University, Chengdu, Sichuan 610031, People's Republic of China
| | - Xiaoliang Chen
- Micro-and Nano-technology Research Center, State Key Laboratory for Manufacturing Systems Engineering, Xi'an Jiaotong University, Xi'an, Shaanxi 710049, People's Republic of China
- Frontier Institute of Science and Technology (FIST), Xi'an Jiaotong University, Xi'an, Shaanxi 710049, China
| | - Jinyou Shao
- Micro-and Nano-technology Research Center, State Key Laboratory for Manufacturing Systems Engineering, Xi'an Jiaotong University, Xi'an, Shaanxi 710049, People's Republic of China
- Frontier Institute of Science and Technology (FIST), Xi'an Jiaotong University, Xi'an, Shaanxi 710049, China
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12
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Xu Z, Bi J, Liu M, Zhang Y, Chen B, Zhang Z. TCAD Simulation Studies on Ultra-Low-Power Non-Volatile Memory. MICROMACHINES 2023; 14:2207. [PMID: 38138376 PMCID: PMC10745870 DOI: 10.3390/mi14122207] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/05/2023] [Revised: 11/24/2023] [Accepted: 12/01/2023] [Indexed: 12/24/2023]
Abstract
Ultra-Low-Power Non-Volatile Memory (UltraRAM), as a promising storage device, has attracted wide research attention from the scientific community. Non-volatile data retention in combination with switching at ≤2.6 V is achieved through the use of the extraordinary 2.1 eV conduction band offsets of InAs/AlSb and a triple-barrier resonant tunnelling structure. Along these lines, in this work, the structure, storage mechanism, and improvement strategies of UltraRAM were systematically investigated to enhance storage window clarity and speed performance. First, the basic structure and working principle of UltraRAM were introduced, and its comparative advantages over traditional memory devices were highlighted. Furthermore, through the validation of the band structure and storage mechanism, the superior performance of UltraRAM, including its low operating voltage and excellent non-volatility, was further demonstrated. To address the issue of the small storage window, an improvement strategy was proposed by reducing the thickness of the channel layer to increase the storage window. The feasibility of this strategy was validated by performing a series of simulation-based experiments. From our analysis, a significant 80% increase in the storage window after thinning the channel layer was demonstrated, providing an important foundation for enhancing the performance of UltraRAM. Additionally, the data storage capability of this strategy was examined under the application of short pulse widths, and a data storage operation with a 10 ns pulse width was successfully achieved. In conclusion, valuable insights into the application of UltraRAM in the field of non-volatile storage were provided. Our work paves the way for further optimizing the memory performance and expanding the functionalities of UltraRAM.
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Affiliation(s)
- Ziming Xu
- Institute of Microelectronics of Chinese Academy of Sciences, Beijing 100029, China; (Z.X.)
- University of Chinese Academy of Sciences, Beijing 100049, China
| | - Jinshun Bi
- University of Chinese Academy of Sciences, Beijing 100049, China
- Institute of Microelectronics of Tianjin Binhai New Area, Tianjin 300308, China
| | - Mengxin Liu
- Institute of Microelectronics of Chinese Academy of Sciences, Beijing 100029, China; (Z.X.)
- University of Chinese Academy of Sciences, Beijing 100049, China
- Beijing Zhongke New Micro Technology Development Co., Ltd., Beijing 100029, China
| | - Yu Zhang
- Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100085, China
- Shanxi Key Laboratory of Advanced Semiconductor Optoelectronic Devices and Integrated Systems, Jincheng 048026, China
- Jincheng Research Institute of Opto-Machatronics Industry, Jincheng 048026, China
| | - Baihong Chen
- Institute of Microelectronics of Chinese Academy of Sciences, Beijing 100029, China; (Z.X.)
- University of Chinese Academy of Sciences, Beijing 100049, China
| | - Zijian Zhang
- Institute of Microelectronics of Chinese Academy of Sciences, Beijing 100029, China; (Z.X.)
- University of Chinese Academy of Sciences, Beijing 100049, China
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13
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Patil PP, Kundale SS, Patil SV, Sutar SS, Bae J, Kadam SJ, More KV, Patil PB, Kamat RK, Lee S, Dongale TD. Self-Assembled Lanthanum Oxide Nanoflakes by Electrodeposition Technique for Resistive Switching Memory and Artificial Synaptic Devices. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2023; 19:e2303862. [PMID: 37452406 DOI: 10.1002/smll.202303862] [Citation(s) in RCA: 2] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/08/2023] [Revised: 06/23/2023] [Indexed: 07/18/2023]
Abstract
In recent years, many metal oxides have been rigorously studied to be employed as solid electrolytes for resistive switching (RS) devices. Among these solid electrolytes, lanthanum oxide (La2 O3 ) is comparatively less explored for RS applications. Given this, the present work focuses on the electrodeposition of La2 O3 switching layers and the investigation of their RS properties for memory and neuromorphic computing applications. Initially, the electrodeposited La2 O3 switching layers are thoroughly characterized by various analytical techniques. The electrochemical impedance spectroscopy (EIS) and Mott-Schottky techniques are probed to understand the in situ electrodeposition, RS mechanism, and n-type semiconducting nature of the fabricated La2 O3 switching layers. All the fabricated devices exhibit bipolar RS characteristics with excellent endurance and stable retention. Moreover, the device mimics the various bio-synaptic properties such as potentiation-depression, excitatory post-synaptic currents, and paired-pulse facilitation. It is demonstrated that the fabricated devices are non-ideal memristors based on double-valued charge-flux characteristics. The switching variation of the device is studied using the Weibull distribution technique and modeled and predicted by the time series analysis technique. Based on electrical and EIS results, a possible filamentary-based RS mechanism is suggested. The present results assert that La2 O3 is a promising solid electrolyte for memory and brain-inspired applications.
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Affiliation(s)
- Pradnya P Patil
- Computational Electronics and Nanoscience Research Laboratory, School of Nanoscience and Biotechnology, Shivaji University, Kolhapur, 416004, India
| | - Somnath S Kundale
- Computational Electronics and Nanoscience Research Laboratory, School of Nanoscience and Biotechnology, Shivaji University, Kolhapur, 416004, India
| | - Shubham V Patil
- Department of Electronic Engineering, Kyung Hee University, Yongin, 17107, Republic of Korea
| | - Santosh S Sutar
- Yashwantrao Chavan School of Rural Development, Shivaji University, Kolhapur, 416004, India
| | - Junseong Bae
- Department of Electronic Engineering, Kyung Hee University, Yongin, 17107, Republic of Korea
| | - Sunil J Kadam
- Department of Mechanical Engineering, Bharati Vidyapeeth's College of Engineering, Kolhapur, 416013, India
| | - Krantiveer V More
- Department of Chemistry, Shivaji University, Kolhapur, 416012, India
| | - Prashant B Patil
- Department of Physics, The New College, Shivaji University, Kolhapur, 416012, India
| | - Rajanish K Kamat
- Department of Electronics, Shivaji University, Kolhapur, 416004, India
- Institute of Science, Dr. Homi Bhabha State University, 15, Madam Cama Road, Mumbai, 400032, India
| | - Seunghyun Lee
- Department of Electronic Engineering, Kyung Hee University, Yongin, 17107, Republic of Korea
| | - Tukaram D Dongale
- Computational Electronics and Nanoscience Research Laboratory, School of Nanoscience and Biotechnology, Shivaji University, Kolhapur, 416004, India
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14
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Cai J, Gao K, Zhao R, Zhu R, Tong H, Miao X. Designing a Multilayered Oxygen Barrier Structure to Tackle Oxidation Challenges in Phase-Change Memory for Improved Reliability. ACS APPLIED MATERIALS & INTERFACES 2023; 15:50499-50507. [PMID: 37862618 DOI: 10.1021/acsami.3c10785] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 10/22/2023]
Abstract
Phase-change memory (PCM) is considered one of the most promising candidates for universal memory. However, during the manufacturing process of PCM, phase-change materials (PCMs) encounter severe oxidation, which can cause degraded performance and reduced stability of PCM, hindering its industrialization process. In this work, a multilayered oxygen barrier (MOB) structure is proposed to tackle this challenge. Material characterization shows that the MOB structure can significantly reduce the extent of oxidation of PCMs from around 70% to as low as around 10%, achieving a remarkably low level of oxidation. Moreover, the material in the MOB structure exhibits notable enhancements in crystallization temperature and cycling capability. The improved stability is attributed to the oxygen barrier effect and the suppression of elemental segregation within the material, which are both conferred by the MOB structure. In summary, this work provides an effective solution to address the oxidation of PCMs, offering valuable guidance for realizing a high-reliability PCM in practical production.
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Affiliation(s)
- Jingwei Cai
- School of Integrated Circuits, Huazhong University of Science and Technology, Wuhan 430074, China
| | - Ke Gao
- School of Integrated Circuits, Huazhong University of Science and Technology, Wuhan 430074, China
| | - Ruizhe Zhao
- School of Integrated Circuits, Huazhong University of Science and Technology, Wuhan 430074, China
| | - Rongjiang Zhu
- School of Integrated Circuits, Huazhong University of Science and Technology, Wuhan 430074, China
| | - Hao Tong
- School of Integrated Circuits, Huazhong University of Science and Technology, Wuhan 430074, China
- Hubei Yangtze Memory Laboratories, Wuhan 430205, China
| | - Xiangshui Miao
- School of Integrated Circuits, Huazhong University of Science and Technology, Wuhan 430074, China
- Hubei Yangtze Memory Laboratories, Wuhan 430205, China
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15
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Kim D, Kim IJ, Lee JS. Demonstration of the threshold-switching memory devices using EMIm(AlCl 3)Cl and ZnO for neuromorphic applications. NANOTECHNOLOGY 2023; 35:015203. [PMID: 37830748 DOI: 10.1088/1361-6528/acf93d] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/23/2023] [Accepted: 09/13/2023] [Indexed: 10/14/2023]
Abstract
The threshold-switching behaviors of the synapses lead to energy-efficient operation in the neural computing system. Here, we demonstrated the threshold-switching memory devices by inserting the ZnO layer into the ionic synaptic devices. The EMIm(AlCl3)Cl is utilized as the electrolyte because its conductance can be tuned by the charge states of the Al-based ions. The redox reactions of the Al ions in the electrolyte can lead to the analog resistive switching characteristics, such as excitatory postsynaptic current, paired-pulse facilitation, potentiation, and depression. By inserting the ZnO layer into the EMIm(AlCl3)-based ionic synaptic devices, the threshold switching behaviors are demonstrated. Using the resistivity difference between ZnO and EMIm(AlCl3)Cl, the analog resistive switching behaviors are tunned as the threshold-switching behaviors. The threshold-switching behaviors are achieved by applying the spike stimuli to the device. Demonstration of the threshold-switching behaviors of the ionic synaptic devices has a possibility to achieve high energy-efficiency for the ion-based artificial synapses.
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Affiliation(s)
- Dongshin Kim
- Department of Materials Science and Engineering, Pohang University of Science and Technology (POSTECH), Pohang 37673, Republic of Korea
| | - Ik-Jyae Kim
- Department of Materials Science and Engineering, Pohang University of Science and Technology (POSTECH), Pohang 37673, Republic of Korea
| | - Jang-Sik Lee
- Department of Materials Science and Engineering, Pohang University of Science and Technology (POSTECH), Pohang 37673, Republic of Korea
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16
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Park JY, Choe DH, Lee DH, Yu GT, Yang K, Kim SH, Park GH, Nam SG, Lee HJ, Jo S, Kuh BJ, Ha D, Kim Y, Heo J, Park MH. Revival of Ferroelectric Memories Based on Emerging Fluorite-Structured Ferroelectrics. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023; 35:e2204904. [PMID: 35952355 DOI: 10.1002/adma.202204904] [Citation(s) in RCA: 5] [Impact Index Per Article: 5.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/31/2022] [Revised: 07/25/2022] [Indexed: 06/15/2023]
Abstract
Over the last few decades, the research on ferroelectric memories has been limited due to their dimensional scalability and incompatibility with complementary metal-oxide-semiconductor (CMOS) technology. The discovery of ferroelectricity in fluorite-structured oxides revived interest in the research on ferroelectric memories, by inducing nanoscale nonvolatility in state-of-the-art gate insulators by minute doping and thermal treatment. The potential of this approach has been demonstrated by the fabrication of sub-30 nm electronic devices. Nonetheless, to realize practical applications, various technical limitations, such as insufficient reliability including endurance, retention, and imprint, as well as large device-to-device-variation, require urgent solutions. Furthermore, such limitations should be considered based on targeting devices as well as applications. Various types of ferroelectric memories including ferroelectric random-access-memory, ferroelectric field-effect-transistor, and ferroelectric tunnel junction should be considered for classical nonvolatile memories as well as emerging neuromorphic computing and processing-in-memory. Therefore, from the viewpoint of materials science, this review covers the recent research focusing on ferroelectric memories from the history of conventional approaches to future prospects.
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Affiliation(s)
- Ju Yong Park
- Research Institute of Advanced Materials, Seoul National University, Seoul, 08826, Republic of Korea
| | - Duk-Hyun Choe
- Beyond Silicon Lab, Samsung Advanced Institute of Technology (SAIT), Suwon, 16678, Republic of Korea
| | - Dong Hyun Lee
- Department of Materials Science and Engineering and Inter-University Semiconductor Research Center, College of Engineering, Seoul National University, Seoul, 08826, Republic of Korea
| | - Geun Taek Yu
- School of Materials Science and Engineering, Pusan National University, Busan, 46241, Republic of Korea
| | - Kun Yang
- Department of Materials Science and Engineering and Inter-University Semiconductor Research Center, College of Engineering, Seoul National University, Seoul, 08826, Republic of Korea
| | - Se Hyun Kim
- Department of Materials Science and Engineering and Inter-University Semiconductor Research Center, College of Engineering, Seoul National University, Seoul, 08826, Republic of Korea
| | - Geun Hyeong Park
- Department of Materials Science and Engineering and Inter-University Semiconductor Research Center, College of Engineering, Seoul National University, Seoul, 08826, Republic of Korea
| | - Seung-Geol Nam
- Beyond Silicon Lab, Samsung Advanced Institute of Technology (SAIT), Suwon, 16678, Republic of Korea
| | - Hyun Jae Lee
- Beyond Silicon Lab, Samsung Advanced Institute of Technology (SAIT), Suwon, 16678, Republic of Korea
| | - Sanghyun Jo
- Beyond Silicon Lab, Samsung Advanced Institute of Technology (SAIT), Suwon, 16678, Republic of Korea
| | - Bong Jin Kuh
- Semiconductor Research and Development Center, Samsung Electronics, Hwaseong, 18448, Republic of Korea
| | - Daewon Ha
- Semiconductor Research and Development Center, Samsung Electronics, Hwaseong, 18448, Republic of Korea
| | - Yongsung Kim
- Beyond Silicon Lab, Samsung Advanced Institute of Technology (SAIT), Suwon, 16678, Republic of Korea
| | - Jinseong Heo
- Beyond Silicon Lab, Samsung Advanced Institute of Technology (SAIT), Suwon, 16678, Republic of Korea
| | - Min Hyuk Park
- Research Institute of Advanced Materials, Seoul National University, Seoul, 08826, Republic of Korea
- Department of Materials Science and Engineering and Inter-University Semiconductor Research Center, College of Engineering, Seoul National University, Seoul, 08826, Republic of Korea
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17
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Xie M, Jia Y, Nie C, Liu Z, Tang A, Fan S, Liang X, Jiang L, He Z, Yang R. Monolithic 3D integration of 2D transistors and vertical RRAMs in 1T-4R structure for high-density memory. Nat Commun 2023; 14:5952. [PMID: 37741834 PMCID: PMC10517937 DOI: 10.1038/s41467-023-41736-2] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 06/19/2022] [Accepted: 09/12/2023] [Indexed: 09/25/2023] Open
Abstract
Emerging data-intensive computation has driven the advanced packaging and vertical stacking of integrated circuits, for minimized latency and energy consumption. Yet a monolithic three-dimensional (3D) integrated structure with interleaved logic and high-density memory layers has been difficult to achieve due to challenges in managing the thermal budget. Here we experimentally demonstrate a monolithic 3D integration of atomically-thin molybdenum disulfide (MoS2) transistors and 3D vertical resistive random-access memories (VRRAMs), with the MoS2 transistors stacked between the bottom-plane and top-plane VRRAMs. The whole fabrication process is integration-friendly (below 300 °C), and the measurement results confirm that the top-plane fabrication does not affect the bottom-plane devices. The MoS2 transistor can drive each layer of VRRAM into four resistance states. Circuit-level modeling of the monolithic 3D structure demonstrates smaller area, faster data transfer, and lower energy consumption than a planar memory. Such platform holds a high potential for energy-efficient 3D on-chip memory systems.
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Affiliation(s)
- Maosong Xie
- University of Michigan-Shanghai Jiao Tong University Joint Institute, Shanghai Jiao Tong University, Shanghai, China
| | - Yueyang Jia
- University of Michigan-Shanghai Jiao Tong University Joint Institute, Shanghai Jiao Tong University, Shanghai, China
| | - Chen Nie
- School of Electronic Information and Electrical Engineering, Shanghai Jiao Tong University, Shanghai, China
| | - Zuheng Liu
- University of Michigan-Shanghai Jiao Tong University Joint Institute, Shanghai Jiao Tong University, Shanghai, China
| | - Alvin Tang
- Department of Electrical Engineering, Stanford University, Stanford, California, USA
| | - Shiquan Fan
- School of Microelectronics, Xi'an Jiaotong University, Xi'an, Shaanxi, China
| | - Xiaoyao Liang
- School of Electronic Information and Electrical Engineering, Shanghai Jiao Tong University, Shanghai, China
| | - Li Jiang
- School of Electronic Information and Electrical Engineering, Shanghai Jiao Tong University, Shanghai, China
- MoE Key Lab of Artificial Intelligence, Shanghai Jiao Tong University, Shanghai, China
- Shanghai Qi Zhi Institute, Shanghai, China
| | - Zhezhi He
- School of Electronic Information and Electrical Engineering, Shanghai Jiao Tong University, Shanghai, China.
| | - Rui Yang
- University of Michigan-Shanghai Jiao Tong University Joint Institute, Shanghai Jiao Tong University, Shanghai, China.
- School of Electronic Information and Electrical Engineering, Shanghai Jiao Tong University, Shanghai, China.
- State Key Laboratory of Radio Frequency Heterogeneous Integration, Shanghai Jiao Tong University, Shanghai, China.
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18
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Zhang W, Yao P, Gao B, Liu Q, Wu D, Zhang Q, Li Y, Qin Q, Li J, Zhu Z, Cai Y, Wu D, Tang J, Qian H, Wang Y, Wu H. Edge learning using a fully integrated neuro-inspired memristor chip. Science 2023; 381:1205-1211. [PMID: 37708281 DOI: 10.1126/science.ade3483] [Citation(s) in RCA: 8] [Impact Index Per Article: 8.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 08/11/2022] [Accepted: 08/08/2023] [Indexed: 09/16/2023]
Abstract
Learning is highly important for edge intelligence devices to adapt to different application scenes and owners. Current technologies for training neural networks require moving massive amounts of data between computing and memory units, which hinders the implementation of learning on edge devices. We developed a fully integrated memristor chip with the improvement learning ability and low energy cost. The schemes in the STELLAR architecture, including its learning algorithm, hardware realization, and parallel conductance tuning scheme, are general approaches that facilitate on-chip learning by using a memristor crossbar array, regardless of the type of memristor device. Tasks executed in this study included motion control, image classification, and speech recognition.
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Affiliation(s)
- Wenbin Zhang
- School of Integrated Circuits, Beijing National Research Center for Information Science and Technology (BNRist), Tsinghua University, Beijing, China
| | - Peng Yao
- School of Integrated Circuits, Beijing National Research Center for Information Science and Technology (BNRist), Tsinghua University, Beijing, China
| | - Bin Gao
- School of Integrated Circuits, Beijing National Research Center for Information Science and Technology (BNRist), Tsinghua University, Beijing, China
| | - Qi Liu
- School of Integrated Circuits, Beijing National Research Center for Information Science and Technology (BNRist), Tsinghua University, Beijing, China
| | - Dong Wu
- School of Integrated Circuits, Beijing National Research Center for Information Science and Technology (BNRist), Tsinghua University, Beijing, China
| | - Qingtian Zhang
- School of Integrated Circuits, Beijing National Research Center for Information Science and Technology (BNRist), Tsinghua University, Beijing, China
| | - Yuankun Li
- School of Integrated Circuits, Beijing National Research Center for Information Science and Technology (BNRist), Tsinghua University, Beijing, China
| | - Qi Qin
- School of Integrated Circuits, Beijing National Research Center for Information Science and Technology (BNRist), Tsinghua University, Beijing, China
| | - Jiaming Li
- School of Integrated Circuits, Beijing National Research Center for Information Science and Technology (BNRist), Tsinghua University, Beijing, China
| | - Zhenhua Zhu
- Department of Electronic Engineering, Beijing National Research Center for Information Science and Technology (BNRist), Tsinghua University, Beijing, China
| | - Yi Cai
- Department of Electronic Engineering, Beijing National Research Center for Information Science and Technology (BNRist), Tsinghua University, Beijing, China
| | - Dabin Wu
- School of Integrated Circuits, Beijing National Research Center for Information Science and Technology (BNRist), Tsinghua University, Beijing, China
| | - Jianshi Tang
- School of Integrated Circuits, Beijing National Research Center for Information Science and Technology (BNRist), Tsinghua University, Beijing, China
| | - He Qian
- School of Integrated Circuits, Beijing National Research Center for Information Science and Technology (BNRist), Tsinghua University, Beijing, China
| | - Yu Wang
- Department of Electronic Engineering, Beijing National Research Center for Information Science and Technology (BNRist), Tsinghua University, Beijing, China
| | - Huaqiang Wu
- School of Integrated Circuits, Beijing National Research Center for Information Science and Technology (BNRist), Tsinghua University, Beijing, China
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19
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Yu J, Wang H, Zhuge F, Chen Z, Hu M, Xu X, He Y, Ma Y, Miao X, Zhai T. Simultaneously ultrafast and robust two-dimensional flash memory devices based on phase-engineered edge contacts. Nat Commun 2023; 14:5662. [PMID: 37704609 PMCID: PMC10499832 DOI: 10.1038/s41467-023-41363-x] [Citation(s) in RCA: 2] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 05/25/2023] [Accepted: 08/31/2023] [Indexed: 09/15/2023] Open
Abstract
As the prevailing non-volatile memory (NVM), flash memory offers mass data storage at high integration density and low cost. However, due to the 'speed-retention-endurance' dilemma, their typical speed is limited to ~microseconds to milliseconds for program and erase operations, restricting their application in scenarios with high-speed data throughput. Here, by adopting metallic 1T-LixMoS2 as edge contact, we show that ultrafast (10-100 ns) and robust (endurance>106 cycles, retention>10 years) memory operation can be simultaneously achieved in a two-dimensional van der Waals heterostructure flash memory with 2H-MoS2 as semiconductor channel. We attribute the superior performance to the gate tunable Schottky barrier at the edge contact, which can facilitate hot carrier injection to the semiconductor channel and subsequent tunneling when compared to a conventional top contact with high density of defects at the metal interface. Our results suggest that contact engineering can become a strategy to further improve the performance of 2D flash memory devices and meet the increasing demands of high speed and reliable data storage.
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Affiliation(s)
- Jun Yu
- State Key Laboratory of Materials Processing and Die and Mould Technology, School of Material Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, China
| | - Han Wang
- State Key Laboratory of Materials Processing and Die and Mould Technology, School of Material Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, China
| | - Fuwei Zhuge
- State Key Laboratory of Materials Processing and Die and Mould Technology, School of Material Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, China.
| | - Zirui Chen
- Hubei Yangtze Memory Laboratory; School of Integrated circuits, Huazhong University of Science and Technology, Wuhan, 430074, China
| | - Man Hu
- State Key Laboratory of Materials Processing and Die and Mould Technology, School of Material Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, China
| | - Xiang Xu
- State Key Laboratory of Materials Processing and Die and Mould Technology, School of Material Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, China
| | - Yuhui He
- Hubei Yangtze Memory Laboratory; School of Integrated circuits, Huazhong University of Science and Technology, Wuhan, 430074, China
| | - Ying Ma
- State Key Laboratory of Materials Processing and Die and Mould Technology, School of Material Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, China.
| | - Xiangshui Miao
- Hubei Yangtze Memory Laboratory; School of Integrated circuits, Huazhong University of Science and Technology, Wuhan, 430074, China
| | - Tianyou Zhai
- State Key Laboratory of Materials Processing and Die and Mould Technology, School of Material Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, China.
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20
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Chen B, Wang X, Jiao F, Ning L, Huang J, Xie J, Zhang S, Li X, Rao F. Suppressing Structural Relaxation in Nanoscale Antimony to Enable Ultralow-Drift Phase-Change Memory Applications. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2023; 10:e2301043. [PMID: 37377084 PMCID: PMC10477879 DOI: 10.1002/advs.202301043] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/15/2023] [Revised: 06/05/2023] [Indexed: 06/29/2023]
Abstract
Phase-change random-access memory (PCRAM) devices suffer from pronounced resistance drift originating from considerable structural relaxation of phase-change materials (PCMs), which hinders current developments of high-capacity memory and high-parallelism computing that both need reliable multibit programming. This work realizes that compositional simplification and geometrical miniaturization of traditional GeSbTe-like PCMs are feasible routes to suppress relaxation. While to date, the aging mechanisms of the simplest PCM, Sb, at nanoscale, have not yet been unveiled. Here, this work demonstrates that in an optimal thickness of only 4 nm, the thin Sb film can enable a precise multilevel programming with ultralow resistance drift coefficients, in a regime of ≈10-4 -10-3 . This advancement is mainly owed to the slightly changed Peierls distortion in Sb and the less-distorted octahedral-like atomic configurations across the Sb/SiO2 interfaces. This work highlights a new indispensable approach, interfacial regulation of nanoscale PCMs, for pursuing ultimately reliable resistance control in aggressively-miniaturized PCRAM devices, to boost the storage and computing efficiencies substantially.
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Affiliation(s)
- Bin Chen
- College of Materials Science and EngineeringShenzhen Key Laboratory of New Information Display and Storage MaterialsShenzhen UniversityShenzhen518060China
| | - Xue‐Peng Wang
- College of Materials Science and EngineeringShenzhen Key Laboratory of New Information Display and Storage MaterialsShenzhen UniversityShenzhen518060China
- State Key Laboratory of Integrated OptoelectronicsCollege of Electronic Science and EngineeringJilin UniversityChangchun130012China
| | - Fangying Jiao
- College of Materials Science and EngineeringShenzhen Key Laboratory of New Information Display and Storage MaterialsShenzhen UniversityShenzhen518060China
| | - Long Ning
- College of Materials Science and EngineeringShenzhen Key Laboratory of New Information Display and Storage MaterialsShenzhen UniversityShenzhen518060China
| | - Jiaen Huang
- College of Materials Science and EngineeringShenzhen Key Laboratory of New Information Display and Storage MaterialsShenzhen UniversityShenzhen518060China
| | - Jiatao Xie
- College of Materials Science and EngineeringShenzhen Key Laboratory of New Information Display and Storage MaterialsShenzhen UniversityShenzhen518060China
| | - Shengbai Zhang
- Department of PhysicsApplied Physics, and AstronomyRensselaer Polytechnic InstituteTroyNY12180USA
| | - Xian‐Bin Li
- State Key Laboratory of Integrated OptoelectronicsCollege of Electronic Science and EngineeringJilin UniversityChangchun130012China
| | - Feng Rao
- College of Materials Science and EngineeringShenzhen Key Laboratory of New Information Display and Storage MaterialsShenzhen UniversityShenzhen518060China
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21
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Chen S, Zhang T, Tappertzhofen S, Yang Y, Valov I. Electrochemical-Memristor-Based Artificial Neurons and Synapses-Fundamentals, Applications, and Challenges. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023; 35:e2301924. [PMID: 37199224 DOI: 10.1002/adma.202301924] [Citation(s) in RCA: 4] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/28/2023] [Revised: 04/22/2023] [Indexed: 05/19/2023]
Abstract
Artificial neurons and synapses are considered essential for the progress of the future brain-inspired computing, based on beyond von Neumann architectures. Here, a discussion on the common electrochemical fundamentals of biological and artificial cells is provided, focusing on their similarities with the redox-based memristive devices. The driving forces behind the functionalities and the ways to control them by an electrochemical-materials approach are presented. Factors such as the chemical symmetry of the electrodes, doping of the solid electrolyte, concentration gradients, and excess surface energy are discussed as essential to understand, predict, and design artificial neurons and synapses. A variety of two- and three-terminal memristive devices and memristive architectures are presented and their application for solving various problems is shown. The work provides an overview of the current understandings on the complex processes of neural signal generation and transmission in both biological and artificial cells and presents the state-of-the-art applications, including signal transmission between biological and artificial cells. This example is showcasing the possibility for creating bioelectronic interfaces and integrating artificial circuits in biological systems. Prospectives and challenges of the modern technology toward low-power, high-information-density circuits are highlighted.
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Affiliation(s)
- Shaochuan Chen
- Institute of Materials in Electrical Engineering 2 (IWE2), RWTH Aachen University, Sommerfeldstraße 24, 52074, Aachen, Germany
| | - Teng Zhang
- Key Laboratory of Microelectronic Devices and Circuits (MOE), School of Integrated Circuits, Peking University, Beijing, 100871, China
| | - Stefan Tappertzhofen
- Chair for Micro- and Nanoelectronics, Department of Electrical Engineering and Information Technology, TU Dortmund University, Martin-Schmeisser-Weg 4-6, D-44227, Dortmund, Germany
| | - Yuchao Yang
- Key Laboratory of Microelectronic Devices and Circuits (MOE), School of Integrated Circuits, Peking University, Beijing, 100871, China
- School of Electronic and Computer Engineering, Peking University, Shenzhen, 518055, China
- Center for Brain Inspired Intelligence, Chinese Institute for Brain Research (CIBR), Beijing, 102206, China
| | - Ilia Valov
- Peter Grünberg Institute (PGI-7), Forschungszentrum Jülich, Wilhelm-Johnen-Straße, 52425, Jülich, Germany
- Institute of Electrochemistry and Energy Systems "Acad. E. Budewski", Bulgarian Academy of Sciences, Acad. G. Bonchev 10, 1113, Sofia, Bulgaria
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22
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Satchell N, Gupta S, Maheshwari M, Shepley PM, Rogers M, Cespedes O, Burnell G. Thin film epitaxial [111] Co[Formula: see text]Pt[Formula: see text]: structure, magnetisation, and spin polarisation. Sci Rep 2023; 13:12468. [PMID: 37528131 PMCID: PMC10394051 DOI: 10.1038/s41598-023-37825-3] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 12/08/2022] [Accepted: 06/28/2023] [Indexed: 08/03/2023] Open
Abstract
Ferromagnetic films with perpendicular magnetic anisotropy are of interest in spintronics and superconducting spintronics. Perpendicular magnetic anisotropy can be achieved in thin ferromagnetic multilayer structures, when the anisotropy is driven by carefully engineered interfaces. Devices with multiple interfaces are disadvantageous for our application in superconducting spintronics, where the current perpendicular to plane is affected by the interfaces. Robust intrinsic PMA can be achieved in certain Co[Formula: see text]Pt[Formula: see text] alloys and compounds at any thickness, without increasing the number of interfaces. Here, we grow equiatomic Co[Formula: see text]Pt[Formula: see text] and report a comprehensive study on the structural, magnetic, and spin-polarisation properties in the [Formula: see text] and [Formula: see text] ordered compounds. Primarily, interest in Co[Formula: see text]Pt[Formula: see text] has been in the [Formula: see text] crystal structure, where layers of Pt and Co are stacked alternately in the [100] direction. There has been less work on [Formula: see text] crystal structure, where the stacking is in the [111] direction. For the latter [Formula: see text] crystal structure, we find magnetic anisotropy perpendicular to the film plane. For the former [Formula: see text] crystal structure, the magnetic anisotropy is perpendicular to the [100] plane, which is neither in-plane or out-of-plane in our samples. We obtain a value for the ballistic spin polarisation of the [Formula: see text] and [Formula: see text] Co[Formula: see text]Pt[Formula: see text] to be [Formula: see text].
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Affiliation(s)
- N. Satchell
- School of Physics and Astronomy, University of Leeds, Leeds, LS2 9JT UK
| | - S. Gupta
- School of Physics and Astronomy, University of Leeds, Leeds, LS2 9JT UK
| | - M. Maheshwari
- School of Physics and Astronomy, University of Leeds, Leeds, LS2 9JT UK
| | - P. M. Shepley
- School of Physics and Astronomy, University of Leeds, Leeds, LS2 9JT UK
| | - M. Rogers
- School of Physics and Astronomy, University of Leeds, Leeds, LS2 9JT UK
| | - O. Cespedes
- School of Physics and Astronomy, University of Leeds, Leeds, LS2 9JT UK
| | - G. Burnell
- School of Physics and Astronomy, University of Leeds, Leeds, LS2 9JT UK
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23
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Zhang C, Ning J, Lu W, Wang B, Cui X, Zhu X, Shen X, Feng X, Wang Y, Wang D, Wang X, Zhang J, Hao Y. Reversible Diode with Tunable Band Alignment for Photoelectricity-Induced Artificial Synapse. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2023; 19:e2300468. [PMID: 37035993 DOI: 10.1002/smll.202300468] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/20/2023] [Revised: 03/14/2023] [Indexed: 06/19/2023]
Abstract
The advent of big data era has put forward higher requirements for electronic nanodevices that have low energy consumption for their application in analog computing with memory and logic circuit to address attendant energy efficiency issues. Here, a miniaturized diode with a reversible switching state based on N-n MoS2 homojunction used a bandgap renormalization effect through the band alignment type regulated by both dielectric and polarization, controllably switched between type-I and type-II, which can be simulated as artificial synapse for sensing memory processing because of its rectification, nonvolatile characteristic and high optical responsiveness. The device demonstrates a rectification ratio of 103 . When served as memory retention time, it can attain at least 7000 s. For the synapse simulation, it has an ultralow-level energy consumption because of the pA-level operation current with 5 pJ for long-term potentiation and 7.8 fJ for long-term depression. Furthermore, the paired pulse facilitation index reaches up to 230%, and it realizes the function of optical storage that can be applied to simulate visual cells.
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Affiliation(s)
- Chi Zhang
- The State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, Xidian University, Xi'an, 710071, P. R. China
- Shaanxi Joint Key Laboratory of Graphene, Xidian University, Xi'an, 710071, P. R. China
| | - Jing Ning
- The State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, Xidian University, Xi'an, 710071, P. R. China
- Shaanxi Joint Key Laboratory of Graphene, Xidian University, Xi'an, 710071, P. R. China
| | - Wei Lu
- The State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, Xidian University, Xi'an, 710071, P. R. China
- Shaanxi Joint Key Laboratory of Graphene, Xidian University, Xi'an, 710071, P. R. China
| | - Boyu Wang
- The State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, Xidian University, Xi'an, 710071, P. R. China
- Shaanxi Joint Key Laboratory of Graphene, Xidian University, Xi'an, 710071, P. R. China
| | - Xuan Cui
- The State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, Xidian University, Xi'an, 710071, P. R. China
- Shaanxi Joint Key Laboratory of Graphene, Xidian University, Xi'an, 710071, P. R. China
| | - Xiaoxiao Zhu
- The State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, Xidian University, Xi'an, 710071, P. R. China
- Shaanxi Joint Key Laboratory of Graphene, Xidian University, Xi'an, 710071, P. R. China
| | - Xue Shen
- The State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, Xidian University, Xi'an, 710071, P. R. China
- Shaanxi Joint Key Laboratory of Graphene, Xidian University, Xi'an, 710071, P. R. China
| | - Xin Feng
- The State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, Xidian University, Xi'an, 710071, P. R. China
- Shaanxi Joint Key Laboratory of Graphene, Xidian University, Xi'an, 710071, P. R. China
| | - Yanbo Wang
- The State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, Xidian University, Xi'an, 710071, P. R. China
- Shaanxi Joint Key Laboratory of Graphene, Xidian University, Xi'an, 710071, P. R. China
| | - Dong Wang
- The State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, Xidian University, Xi'an, 710071, P. R. China
- Shaanxi Joint Key Laboratory of Graphene, Xidian University, Xi'an, 710071, P. R. China
- Xidian-Wuhu Research Institute, Wuhu, 241000, P. R. China
| | - Xinran Wang
- National Laboratory of Solid-State Microstructures, School of Electronic Science and Engineering and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, P. R. China
| | - Jincheng Zhang
- The State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, Xidian University, Xi'an, 710071, P. R. China
- Shaanxi Joint Key Laboratory of Graphene, Xidian University, Xi'an, 710071, P. R. China
| | - Yue Hao
- The State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, Xidian University, Xi'an, 710071, P. R. China
- Shaanxi Joint Key Laboratory of Graphene, Xidian University, Xi'an, 710071, P. R. China
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24
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Li J, Qian Y, Li W, Yu S, Ke Y, Qian H, Lin YH, Hou CH, Shyue JJ, Zhou J, Chen Y, Xu J, Zhu J, Yi M, Huang W. Polymeric Memristor Based Artificial Synapses with Ultra-Wide Operating Temperature. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023; 35:e2209728. [PMID: 36972150 DOI: 10.1002/adma.202209728] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/21/2022] [Revised: 03/12/2023] [Indexed: 06/09/2023]
Abstract
Neuromorphic electronics, being inspired by how the brain works, hold great promise to the successful implementation of smart artificial systems. Among several neuromorphic hardware issues, a robust device functionality under extreme temperature is of particular importance for practical applications. Given that the organic memristors for artificial synapse applications are demonstrated under room temperature, achieving a robust device performance at extremely low or high temperature is still utterly challenging. In this work, the temperature issue is addressed by tuning the functionality of the solution-based organic polymeric memristor. The optimized memristor demonstrates a reliable performance under both the cryogenic and high-temperature environments. The unencapsulated organic polymeric memristor shows a robust memristive response under test temperature ranging from 77 to 573 K. Utilizing X-ray photoelectron spectroscopy (XPS) and time-of-flight secondary-ion mass spectrometry (ToF-SIMS) depth profiling, the device working mechanism is unveiled by comparing the compositional profiles of the fresh and written organic polymeric memristors. A reversible ion migration induced by an applied voltage contributes to the characteristic switching behavior of the memristor. Herein, both the robust memristive response achieved at extreme temperatures and the verified device working mechanism will remarkably accelerate the development of memristors in neuromorphic systems.
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Affiliation(s)
- Jiayu Li
- State Key Laboratory of Organic Electronics and Information Displays, Jiangsu Key Laboratory for Biosensors, Institute of Advanced Materials (IAM), Nanjing University of Posts & Telecommunications (NUPT), Nanjing, 210023, P. R. China
| | - Yangzhou Qian
- State Key Laboratory of Organic Electronics and Information Displays, Jiangsu Key Laboratory for Biosensors, Institute of Advanced Materials (IAM), Nanjing University of Posts & Telecommunications (NUPT), Nanjing, 210023, P. R. China
| | - Wen Li
- State Key Laboratory of Organic Electronics and Information Displays, Jiangsu Key Laboratory for Biosensors, Institute of Advanced Materials (IAM), Nanjing University of Posts & Telecommunications (NUPT), Nanjing, 210023, P. R. China
| | - Songcheng Yu
- State Key Laboratory of Organic Electronics and Information Displays, Jiangsu Key Laboratory for Biosensors, Institute of Advanced Materials (IAM), Nanjing University of Posts & Telecommunications (NUPT), Nanjing, 210023, P. R. China
| | - Yunxin Ke
- State Key Laboratory of Organic Electronics and Information Displays, Jiangsu Key Laboratory for Biosensors, Institute of Advanced Materials (IAM), Nanjing University of Posts & Telecommunications (NUPT), Nanjing, 210023, P. R. China
| | - Haowen Qian
- State Key Laboratory of Organic Electronics and Information Displays, Jiangsu Key Laboratory for Biosensors, Institute of Advanced Materials (IAM), Nanjing University of Posts & Telecommunications (NUPT), Nanjing, 210023, P. R. China
| | - Yen-Hung Lin
- Department of Electronic and Computer Engineering, The Hong Kong University of Science and Technology, Hong Kong SAR, 999077, P. R. China
| | - Cheng-Hung Hou
- Research Center for Applied Sciences, Academia Sinica, Taipei, 11529, Taiwan
| | - Jing-Jong Shyue
- Research Center for Applied Sciences, Academia Sinica, Taipei, 11529, Taiwan
| | - Jia Zhou
- State Key Laboratory of Organic Electronics and Information Displays, Jiangsu Key Laboratory for Biosensors, Institute of Advanced Materials (IAM), Nanjing University of Posts & Telecommunications (NUPT), Nanjing, 210023, P. R. China
| | - Ye Chen
- State Key Laboratory of Organic Electronics and Information Displays, Jiangsu Key Laboratory for Biosensors, Institute of Advanced Materials (IAM), Nanjing University of Posts & Telecommunications (NUPT), Nanjing, 210023, P. R. China
| | - Jiangping Xu
- Key Lab of Materials Chemistry for Energy Conversion & Storage of Ministry of Education, School of Chemistry & Chemical Engineering, Huazhong University of Science and Technology (HUST), Wuhan, 430074, P. R. China
| | - Jintao Zhu
- Key Lab of Materials Chemistry for Energy Conversion & Storage of Ministry of Education, School of Chemistry & Chemical Engineering, Huazhong University of Science and Technology (HUST), Wuhan, 430074, P. R. China
| | - Mingdong Yi
- State Key Laboratory of Organic Electronics and Information Displays, Jiangsu Key Laboratory for Biosensors, Institute of Advanced Materials (IAM), Nanjing University of Posts & Telecommunications (NUPT), Nanjing, 210023, P. R. China
| | - Wei Huang
- State Key Laboratory of Organic Electronics and Information Displays, Jiangsu Key Laboratory for Biosensors, Institute of Advanced Materials (IAM), Nanjing University of Posts & Telecommunications (NUPT), Nanjing, 210023, P. R. China
- Institute of Flexible Electronics (IFE), Northwestern Polytechnical University, Xi'an, 710072, P. R. China
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25
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Yang AJ, Wang SX, Xu J, Loh XJ, Zhu Q, Wang XR. Two-Dimensional Layered Materials Meet Perovskite Oxides: A Combination for High-Performance Electronic Devices. ACS NANO 2023. [PMID: 37171107 DOI: 10.1021/acsnano.3c00429] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/13/2023]
Abstract
As the Si-based transistors scale down to atomic dimensions, the basic principle of current electronics, which heavily relies on the tunable charge degree of freedom, faces increasing challenges to meet the future requirements of speed, switching energy, heat dissipation, and packing density as well as functionalities. Heterogeneous integration, where dissimilar layers of materials and functionalities are unrestrictedly stacked at an atomic scale, is appealing for next-generation electronics, such as multifunctional, neuromorphic, spintronic, and ultralow-power devices, because it unlocks technologically useful interfaces of distinct functionalities. Recently, the combination of functional perovskite oxides and two-dimensional layered materials (2DLMs) led to unexpected functionalities and enhanced device performance. In this paper, we review the recent progress of the heterogeneous integration of perovskite oxides and 2DLMs from the perspectives of fabrication and interfacial properties, electronic applications, and challenges as well as outlooks. In particular, we focus on three types of attractive applications, namely field-effect transistors, memory, and neuromorphic electronics. The van der Waals integration approach is extendible to other oxides and 2DLMs, leading to almost unlimited combinations of oxides and 2DLMs and contributing to future high-performance electronic and spintronic devices.
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Affiliation(s)
- Allen Jian Yang
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, 21 Nanyang Link, Singapore 637371, Singapore
| | - Su-Xi Wang
- Institute of Materials Research and Engineering (IMRE), Agency for Science, Technology and Research (A*STAR), 2 Fusionopolis Way, Innovis, #08-03, Singapore 13863, Singapore
| | - Jianwei Xu
- Institute of Materials Research and Engineering (IMRE), Agency for Science, Technology and Research (A*STAR), 2 Fusionopolis Way, Innovis, #08-03, Singapore 13863, Singapore
- Institute of Sustainability for Chemicals, Energy and Environment (ISCE2), Agency for Science, Technology and Research (A*STAR), 1 Pesek Road, Jurong Island, Singapore, 627833, Singapore
- Institute of Materials Research and Engineering (IMRE), Agency for Science, Technology and Research (A*STAR), 2 Fusionopolis Way, Innovis, #08-03, Singapore 13863, Singapore
| | - Xian Jun Loh
- Institute of Materials Research and Engineering (IMRE), Agency for Science, Technology and Research (A*STAR), 2 Fusionopolis Way, Innovis, #08-03, Singapore 13863, Singapore
- Institute of Sustainability for Chemicals, Energy and Environment (ISCE2), Agency for Science, Technology and Research (A*STAR), 1 Pesek Road, Jurong Island, Singapore, 627833, Singapore
- Institute of Materials Research and Engineering (IMRE), Agency for Science, Technology and Research (A*STAR), 2 Fusionopolis Way, Innovis, #08-03, Singapore 13863, Singapore
| | - Qiang Zhu
- Institute of Materials Research and Engineering (IMRE), Agency for Science, Technology and Research (A*STAR), 2 Fusionopolis Way, Innovis, #08-03, Singapore 13863, Singapore
- Institute of Sustainability for Chemicals, Energy and Environment (ISCE2), Agency for Science, Technology and Research (A*STAR), 1 Pesek Road, Jurong Island, Singapore, 627833, Singapore
- School of Chemistry, Chemical Engineering and Biotechnology, Nanyang Technological University, 21 Nanyang Link, Singapore 637371, Singapore
| | - Xiao Renshaw Wang
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, 21 Nanyang Link, Singapore 637371, Singapore
- School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Ave, Singapore 639798, Singapore
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26
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Langenegger J, Karunaratne G, Hersche M, Benini L, Sebastian A, Rahimi A. In-memory factorization of holographic perceptual representations. NATURE NANOTECHNOLOGY 2023; 18:479-485. [PMID: 36997756 DOI: 10.1038/s41565-023-01357-8] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/17/2022] [Accepted: 02/21/2023] [Indexed: 05/21/2023]
Abstract
Disentangling the attributes of a sensory signal is central to sensory perception and cognition and hence is a critical task for future artificial intelligence systems. Here we present a compute engine capable of efficiently factorizing high-dimensional holographic representations of combinations of such attributes, by exploiting the computation-in-superposition capability of brain-inspired hyperdimensional computing, and the intrinsic stochasticity associated with analogue in-memory computing based on nanoscale memristive devices. Such an iterative in-memory factorizer is shown to solve at least five orders of magnitude larger problems that cannot be solved otherwise, as well as substantially lowering the computational time and space complexity. We present a large-scale experimental demonstration of the factorizer by employing two in-memory compute chips based on phase-change memristive devices. The dominant matrix-vector multiplication operations take a constant time, irrespective of the size of the matrix, thus reducing the computational time complexity to merely the number of iterations. Moreover, we experimentally demonstrate the ability to reliably and efficiently factorize visual perceptual representations.
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Affiliation(s)
- Jovin Langenegger
- IBM Research-Zurich, Rüschlikon, Switzerland
- Department of Information Technology and Electrical Engineering, ETH Zürich, Zürich, Switzerland
| | - Geethan Karunaratne
- IBM Research-Zurich, Rüschlikon, Switzerland
- Department of Information Technology and Electrical Engineering, ETH Zürich, Zürich, Switzerland
| | - Michael Hersche
- IBM Research-Zurich, Rüschlikon, Switzerland
- Department of Information Technology and Electrical Engineering, ETH Zürich, Zürich, Switzerland
| | - Luca Benini
- Department of Information Technology and Electrical Engineering, ETH Zürich, Zürich, Switzerland
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27
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Zhou PK, Lin XL, Chee MY, Lew WS, Zeng T, Li HH, Chen X, Chen ZR, Zheng HD. Switching the memory behaviour from binary to ternary by triggering S 62- relaxation in polysulfide-bearing zinc-organic complex molecular memories. MATERIALS HORIZONS 2023. [PMID: 37070656 DOI: 10.1039/d3mh00037k] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/19/2023]
Abstract
The use of crystalline metal-organic complexes with definite structures as multilevel memories can enable explicit structure-property correlations, which is significant for designing the next generation of memories. Here, four Zn-polysulfide complexes with different degrees of conjugation have been fabricated as memory devices. ZnS6(L)2-based memories (L = pyridine and 3-methylpyridine) can exhibit only bipolar binary memory performances, but ZnS6(L)-based memories (L = 2,2'-bipyridine and 1,10-phenanthroline) illustrate non-volatile ternary memory performances with high ON2/ON1/OFF ratios (104.22/102.27/1 and 104.85/102.58/1) and ternary yields (74% and 78%). Their ON1 states stem from the packing adjustments of organic ligands upon the injection of carriers, and the ON2 states are a result of the ring-to-chain relaxation of S62- anions. The lower conjugated degrees in ZnS6(L)2 result in less compact packing; consequently, the adjacent S62- rings are too long to trigger the S62- relaxation. The deep structure-property correlation in this work provides a new strategy for implementing multilevel memory by triggering polysulfide relaxation based on the conjugated degree regulation of organic ligands.
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Affiliation(s)
- Pan-Ke Zhou
- Fujian Provincial Key Laboratory of Advanced Inorganic Oxygenated Materials, State Key Laboratory of Photocatalysis on Energy and Environment, College of Chemistry, Fuzhou University, Fujian 350108, China.
| | - Xiao-Li Lin
- Fujian Provincial Key Laboratory of Advanced Inorganic Oxygenated Materials, State Key Laboratory of Photocatalysis on Energy and Environment, College of Chemistry, Fuzhou University, Fujian 350108, China.
| | - Mun Yin Chee
- School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore 637371, Singapore
| | - Wen Siang Lew
- School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore 637371, Singapore
| | - Tao Zeng
- Department of Materials Science and Engineering, National University of Singapore, Singapore 117575, Singapore
| | - Hao-Hong Li
- Fujian Provincial Key Laboratory of Advanced Inorganic Oxygenated Materials, State Key Laboratory of Photocatalysis on Energy and Environment, College of Chemistry, Fuzhou University, Fujian 350108, China.
| | - Xiong Chen
- Fujian Provincial Key Laboratory of Advanced Inorganic Oxygenated Materials, State Key Laboratory of Photocatalysis on Energy and Environment, College of Chemistry, Fuzhou University, Fujian 350108, China.
| | - Zhi-Rong Chen
- Fujian Provincial Key Laboratory of Advanced Inorganic Oxygenated Materials, State Key Laboratory of Photocatalysis on Energy and Environment, College of Chemistry, Fuzhou University, Fujian 350108, China.
| | - Hui-Dong Zheng
- Fujian Engineering Research Centre of Advanced Manufacturing Technology for Fine Chemicals, College of Chemical Engineering, Fuzhou University, Fuzhou, Fujian, 350108, China.
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28
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Zhang ZC, Chen XD, Lu TB. Recent progress in neuromorphic and memory devices based on graphdiyne. SCIENCE AND TECHNOLOGY OF ADVANCED MATERIALS 2023; 24:2196240. [PMID: 37090847 PMCID: PMC10116926 DOI: 10.1080/14686996.2023.2196240] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 01/04/2023] [Revised: 03/20/2023] [Accepted: 03/24/2023] [Indexed: 05/03/2023]
Abstract
Graphdiyne (GDY) is an emerging two-dimensional carbon allotrope featuring a direct bandgap and fascinating physical and chemical properties, and it has demonstrated its promising potential in applications of catalysis, energy conversion and storage, electrical/optoelectronic devices, etc. In particular, the recent breakthrough in the synthesis of large-area, high-quality and ultrathin GDY films provides a feasible approach to developing high-performance electrical devices based on GDY. Recently, various GDY-based electrical and optoelectronic devices including multibit optoelectronic memories, ultrafast nonvolatile memories, artificial synapses and memristors have been proposed, in which GDY plays a crucial role. It is essential to summarize the recent breakthrough of GDY in device applications as a guidance, especially considering that the existing GDY-related reviews mainly focus on the applications in catalysis and energy-related fields. Herein, we review GDY-based novel memory and neuromorphic devices and their applications in neuromorphic computing and artificial visual systems. This review will provide an insight into the design and preparation of GDY-based devices and broaden the application fields of GDY.
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Affiliation(s)
- Zhi-Cheng Zhang
- The Key Laboratory of Weak Light Nonlinear Photonics, Ministry of Education, School of Physics, Nankai University, Tianjin, China
| | - Xu-Dong Chen
- The Key Laboratory of Weak Light Nonlinear Photonics, Ministry of Education, School of Physics, Nankai University, Tianjin, China
- MOE International Joint Laboratory of Materials Microstructure, Institute for New Energy Materials and Low Carbon Technologies, School of Material Science and Engineering, Tianjin University of Technology, Tianjin, China
| | - Tong-Bu Lu
- MOE International Joint Laboratory of Materials Microstructure, Institute for New Energy Materials and Low Carbon Technologies, School of Material Science and Engineering, Tianjin University of Technology, Tianjin, China
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29
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Zhang J, Fang W, Wang R, Li C, Zheng J, Zou X, Song S, Song Z, Zhou X. Nanoscale Phase Change Material Array by Sub-Resolution Assist Feature for Storage Class Memory Application. NANOMATERIALS (BASEL, SWITZERLAND) 2023; 13:1050. [PMID: 36985944 PMCID: PMC10059855 DOI: 10.3390/nano13061050] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 02/19/2023] [Revised: 03/09/2023] [Accepted: 03/12/2023] [Indexed: 06/18/2023]
Abstract
High density phase change memory array requires both minimized critical dimension (CD) and maximized process window for the phase change material layer. High in-wafer uniformity of the nanoscale patterning of chalcogenides material is challenging given the optical proximity effect (OPE) in the lithography process and the micro-loading effect in the etching process. In this study, we demonstrate an approach to fabricate high density phase change material arrays with half-pitch down to around 70 nm by the co-optimization of lithography and plasma etching process. The focused-energy matrix was performed to improve the pattern process window of phase change material on a 12-inch wafer. A variety of patternings from an isolated line to a dense pitch line were investigated using immersion lithography system. The collapse of the edge line is observed due to the OPE induced shrinkage in linewidth, which is deteriorative as the patterning density increases. The sub-resolution assist feature (SRAF) was placed to increase the width of the lines at both edges of each patterning by taking advantage of the optical interference between the main features and the assistant features. The survival of the line at the edges is confirmed with around a 70 nm half-pitch feature in various arrays. A uniform etching profile across the pitch line pattern of phase change material was demonstrated in which the micro-loading effect and the plasma etching damage were significantly suppressed by co-optimizing the etching parameters. The results pave the way to achieve high density device arrays with improved uniformity and reliability for mass storage applications.
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Affiliation(s)
- Jiarui Zhang
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China
- School of Physical Science and Technology, ShanghaiTech University, Shanghai 201210, China
| | - Wencheng Fang
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China
| | - Ruobing Wang
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China
| | - Chengxing Li
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China
| | - Jia Zheng
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China
| | - Xixi Zou
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China
- School of Physical Science and Technology, ShanghaiTech University, Shanghai 201210, China
| | - Sannian Song
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China
| | - Zhitang Song
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China
- School of Physical Science and Technology, ShanghaiTech University, Shanghai 201210, China
| | - Xilin Zhou
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China
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Wang C, Shi G, Qiao F, Lin R, Wu S, Hu Z. Research progress in architecture and application of RRAM with computing-in-memory. NANOSCALE ADVANCES 2023; 5:1559-1573. [PMID: 36926563 PMCID: PMC10012847 DOI: 10.1039/d3na00025g] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 01/11/2023] [Accepted: 02/04/2023] [Indexed: 06/18/2023]
Abstract
The development of new technologies has led to an explosion of data, while the computation ability of traditional computers is approaching its upper limit. The dominant system architecture is the von Neumann architecture, with the processing and storage units working independently. The data migrate between them via buses, reducing computing speed and increasing energy loss. Research is underway to increase computing power, such as developing new chips and adopting new system architectures. Computing-in-memory (CIM) technology allows data to be computed directly on the memory, changing the current computation-centric architecture and designing a new storage-centric architecture. Resistive random access memory (RRAM) is one of the advanced memories which has appeared in recent years. RRAM can change its resistance with electrical signals at both ends, and the state will be preserved after power-down. It has potential in logic computing, neural networks, brain-like computing, and fused technology of sense-storage-computing. These advanced technologies promise to break the performance bottleneck of traditional architectures and dramatically increase computing power. This paper introduces the basic concepts of computing-in-memory technology and the principle and applications of RRAM and finally gives a conclusion about these new technologies.
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Affiliation(s)
- Chenyu Wang
- College of Mechanical and Electrical Engineering, China Jiliang University Hangzhou China
| | - Ge Shi
- College of Mechanical and Electrical Engineering, China Jiliang University Hangzhou China
| | - Fei Qiao
- Dept of Electronic Engineering, Tsinghua University Beijing 310018 People's Republic of China
| | - Rubin Lin
- College of Mechanical and Electrical Engineering, China Jiliang University Hangzhou China
| | - Shien Wu
- College of Mechanical and Electrical Engineering, China Jiliang University Hangzhou China
| | - Zenan Hu
- College of Mechanical and Electrical Engineering, China Jiliang University Hangzhou China
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Zahoor F, Hussin FA, Isyaku UB, Gupta S, Khanday FA, Chattopadhyay A, Abbas H. Resistive random access memory: introduction to device mechanism, materials and application to neuromorphic computing. DISCOVER NANO 2023; 18:36. [PMID: 37382679 PMCID: PMC10409712 DOI: 10.1186/s11671-023-03775-y] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/25/2022] [Accepted: 01/17/2023] [Indexed: 06/30/2023]
Abstract
The modern-day computing technologies are continuously undergoing a rapid changing landscape; thus, the demands of new memory types are growing that will be fast, energy efficient and durable. The limited scaling capabilities of the conventional memory technologies are pushing the limits of data-intense applications beyond the scope of silicon-based complementary metal oxide semiconductors (CMOS). Resistive random access memory (RRAM) is one of the most suitable emerging memory technologies candidates that have demonstrated potential to replace state-of-the-art integrated electronic devices for advanced computing and digital and analog circuit applications including neuromorphic networks. RRAM has grown in prominence in the recent years due to its simple structure, long retention, high operating speed, ultra-low-power operation capabilities, ability to scale to lower dimensions without affecting the device performance and the possibility of three-dimensional integration for high-density applications. Over the past few years, research has shown RRAM as one of the most suitable candidates for designing efficient, intelligent and secure computing system in the post-CMOS era. In this manuscript, the journey and the device engineering of RRAM with a special focus on the resistive switching mechanism are detailed. This review also focuses on the RRAM based on two-dimensional (2D) materials, as 2D materials offer unique electrical, chemical, mechanical and physical properties owing to their ultrathin, flexible and multilayer structure. Finally, the applications of RRAM in the field of neuromorphic computing are presented.
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Affiliation(s)
- Furqan Zahoor
- School of Computer Science and Engineering, Nanyang Technological University, Singapore, Singapore
| | - Fawnizu Azmadi Hussin
- Department of Electrical and Electronics Engineering, Universiti Teknologi Petronas, Seri Iskandar, Malaysia
| | - Usman Bature Isyaku
- Department of Electrical and Electronics Engineering, Universiti Teknologi Petronas, Seri Iskandar, Malaysia
| | - Shagun Gupta
- School of Electronics and Communication Engineering, Shri Mata Vaishno Devi University, Katra, India
| | - Farooq Ahmad Khanday
- Department of Electronics & Instrumentation Technology, University of Kashmir, Srinagar, India
| | - Anupam Chattopadhyay
- School of Computer Science and Engineering, Nanyang Technological University, Singapore, Singapore
| | - Haider Abbas
- Division of Material Science and Engineering, Hanyang University, Seoul, South Korea
- School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore, Singapore
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32
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Shen J, Song W, Ren K, Song Z, Zhou P, Zhu M. Toward the Speed Limit of Phase-Change Memory. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023; 35:e2208065. [PMID: 36719053 DOI: 10.1002/adma.202208065] [Citation(s) in RCA: 5] [Impact Index Per Article: 5.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/02/2022] [Revised: 01/16/2023] [Indexed: 06/18/2023]
Abstract
Phase-change memory (PCM) is one of the most promising candidates for next-generation data-storage technology, the programming speed of which has enhanced within a timescale from milliseconds to sub-nanosecond (≈500 ps) through decades of effort. As the potential applications of PCM strongly depend on the switching speed, namely, the time required for the recrystallization of amorphous chalcogenide media, the finding of the ultimate crystallization speed is of great importance both theoretically and practically. In this work, through systematic analysis of discovered phase-change materials and ab initio molecular dynamics simulations, elemental Sb-based PCM is predicted to have a superfast crystallization speed. Indeed, such cells experimentally present extremely fast crystallization speeds within 360 ps. Remarkably, the recrystallization process is further sped up as the device shrinks, and a record-fast crystallization speed of only 242 ps is achieved in 60 nm-size devices. These findings open opportunities for dynamic random-access memory (DRAM)-like and even cache-like PCM using appropriate storage materials.
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Affiliation(s)
- Jiabin Shen
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Micro-System and Information Technology, Chinese Academy of Sciences, Shanghai, 200050, P. R. China
- State Key Laboratory of ASIC and System Department of Microelectronics, Fudan University, Shanghai, 200433, P. R. China
| | - Wenxiong Song
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Micro-System and Information Technology, Chinese Academy of Sciences, Shanghai, 200050, P. R. China
| | - Kun Ren
- College of Micro-Nano Electronics, ZJU-Hangzhou Global Scientific and Technological Innovation Center, Zhejiang University, Hangzhou, 310027, P. R. China
| | - Zhitang Song
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Micro-System and Information Technology, Chinese Academy of Sciences, Shanghai, 200050, P. R. China
| | - Peng Zhou
- State Key Laboratory of ASIC and System Department of Microelectronics, Fudan University, Shanghai, 200433, P. R. China
| | - Min Zhu
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Micro-System and Information Technology, Chinese Academy of Sciences, Shanghai, 200050, P. R. China
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33
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Zhang J, Rong N, Xu P, Xiao Y, Lu A, Song W, Song S, Song Z, Liang Y, Wu L. The Effect of Carbon Doping on the Crystal Structure and Electrical Properties of Sb 2Te 3. NANOMATERIALS (BASEL, SWITZERLAND) 2023; 13:671. [PMID: 36839039 PMCID: PMC9959287 DOI: 10.3390/nano13040671] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 12/27/2022] [Revised: 01/12/2023] [Accepted: 01/21/2023] [Indexed: 06/18/2023]
Abstract
As a new generation of non-volatile memory, phase change random access memory (PCRAM) has the potential to fill the hierarchical gap between DRAM and NAND FLASH in computer storage. Sb2Te3, one of the candidate materials for high-speed PCRAM, has high crystallization speed and poor thermal stability. In this work, we investigated the effect of carbon doping on Sb2Te3. It was found that the FCC phase of C-doped Sb2Te3 appeared at 200 °C and began to transform into the HEX phase at 25 °C, which is different from the previous reports where no FCC phase was observed in C-Sb2Te3. Based on the experimental observation and first-principles density functional theory calculation, it is found that the formation energy of FCC-Sb2Te3 structure decreases gradually with the increase in C doping concentration. Moreover, doped C atoms tend to form C molecular clusters in sp2 hybridization at the grain boundary of Sb2Te3, which is similar to the layered structure of graphite. And after doping C atoms, the thermal stability of Sb2Te3 is improved. We have fabricated the PCRAM device cell array of a C-Sb2Te3 alloy, which has an operating speed of 5 ns, a high thermal stability (10-year data retention temperature 138.1 °C), a low device power consumption (0.57 pJ), a continuously adjustable resistance value, and a very low resistance drift coefficient.
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Affiliation(s)
- Jie Zhang
- College of Science, Donghua University, Shanghai 201620, China
| | - Ningning Rong
- College of Science, Donghua University, Shanghai 201620, China
| | - Peng Xu
- College of Science, Donghua University, Shanghai 201620, China
| | - Yuchen Xiao
- College of Science, Donghua University, Shanghai 201620, China
| | - Aijiang Lu
- College of Science, Donghua University, Shanghai 201620, China
| | - Wenxiong Song
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China
| | - Sannian Song
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China
| | - Zhitang Song
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China
| | - Yongcheng Liang
- College of Science, Donghua University, Shanghai 201620, China
| | - Liangcai Wu
- College of Science, Donghua University, Shanghai 201620, China
- Shanghai Institute of Intelligent Electronics & Systems, Shanghai 200433, China
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34
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Liu C, Zheng Y, Xin T, Zheng Y, Wang R, Cheng Y. The Relationship between Electron Transport and Microstructure in Ge 2Sb 2Te 5 Alloy. NANOMATERIALS (BASEL, SWITZERLAND) 2023; 13:582. [PMID: 36770543 PMCID: PMC9919368 DOI: 10.3390/nano13030582] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 12/15/2022] [Revised: 01/20/2023] [Accepted: 01/26/2023] [Indexed: 06/18/2023]
Abstract
Phase-change random-access memory (PCRAM) holds great promise for next-generation information storage applications. As a mature phase change material, Ge2Sb2Te5 alloy (GST) relies on the distinct electrical properties of different states to achieve information storage, but there are relatively few studies on the relationship between electron transport and microstructure. In this work, we found that the first resistance dropping in GST film is related to the increase of carrier concentration, in which the atomic bonding environment changes substantially during the crystallization process. The second resistance dropping is related to the increase of carrier mobility. Besides, during the cubic to the hexagonal phase transition, the nanograins grow significantly from ~50 nm to ~300 nm, which reduces the carrier scattering effect. Our study lays the foundation for precisely controlling the storage states of GST-based PCRAM devices.
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Affiliation(s)
- Cheng Liu
- Key Laboratory of Polar Materials and Devices (MOE), Department of Electronics, East China Normal University, Shanghai 200241, China
| | - Yonghui Zheng
- Key Laboratory of Polar Materials and Devices (MOE), Department of Electronics, East China Normal University, Shanghai 200241, China
- Chongqing Key Laboratory of Precision Optics, Chongqing Institute of East China Normal University, Chongqing 401120, China
| | - Tianjiao Xin
- Key Laboratory of Polar Materials and Devices (MOE), Department of Electronics, East China Normal University, Shanghai 200241, China
| | - Yunzhe Zheng
- Key Laboratory of Polar Materials and Devices (MOE), Department of Electronics, East China Normal University, Shanghai 200241, China
| | - Rui Wang
- Key Laboratory of Polar Materials and Devices (MOE), Department of Electronics, East China Normal University, Shanghai 200241, China
| | - Yan Cheng
- Key Laboratory of Polar Materials and Devices (MOE), Department of Electronics, East China Normal University, Shanghai 200241, China
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35
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Xiong X, Kang J, Liu S, Tong A, Fu T, Li X, Huang R, Wu Y. Nonvolatile Logic and Ternary Content-Addressable Memory Based on Complementary Black Phosphorus and Rhenium Disulfide Transistors. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2022; 34:e2106321. [PMID: 34779068 DOI: 10.1002/adma.202106321] [Citation(s) in RCA: 4] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/12/2021] [Revised: 10/02/2021] [Indexed: 06/13/2023]
Abstract
Hardware realization of in-memory computing for efficient data-intensive computation is regarded as a promising paradigm beyond the Moore era. However, to realize such functions, the device structure using traditional Si complementary metal-oxide-semiconductor (CMOS) technology is complex with a large footprint. 2D material-based heterostructures have a unique advantage to build versatile logic functions based on novel heterostructures with simplified device footprint and low power. Here, by adopting the charge-trapping mechanism between a black phosphorus (BP) channel and a phosphorus oxide (POx ) layer, a nonvolatile CMOS logic circuit based on 2D BP and rhenium disulfide (ReS2 ) with a high voltage gain of ≈275 is realized with a persistent hysteresis window. A Schmidt-like flip-flop using only two transistors is also demonstrated, with far fewer transistor numbers than the conventional silicon counterpart, which usually requires six transistors. Furthermore, four-transistor (4T) nonvolatile ternary content-addressable memory (nvTCAM) cells are demonstrated with far fewer transistors for parallel data search. The nvTCAM cells exhibit high resistance ratios (Rratio ) up to ≈103 between match and mismatch states with zero standby power thanks to the nonvolatility of the BP transistors. This back-end-of-line compatible nvTCAM shows advantages over other structures with reduced complexity and thermal budget.
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Affiliation(s)
- Xiong Xiong
- Institute of Microelectronics and Key Laboratory of Microelectronic Devices and Circuits (MOE), Peking University, Beijing, 100871, China
| | - Jiyang Kang
- Wuhan National High Magnetic Field Center and School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan, 430074, China
| | - Shiyuan Liu
- Institute of Microelectronics and Key Laboratory of Microelectronic Devices and Circuits (MOE), Peking University, Beijing, 100871, China
| | - Anyu Tong
- Institute of Microelectronics and Key Laboratory of Microelectronic Devices and Circuits (MOE), Peking University, Beijing, 100871, China
| | - Tianyue Fu
- Institute of Microelectronics and Key Laboratory of Microelectronic Devices and Circuits (MOE), Peking University, Beijing, 100871, China
| | - Xuefei Li
- Wuhan National High Magnetic Field Center and School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan, 430074, China
| | - Ru Huang
- Institute of Microelectronics and Key Laboratory of Microelectronic Devices and Circuits (MOE), Peking University, Beijing, 100871, China
- Frontiers Science Center for Nano-Optoelectronics, Peking University, Beijing, 100871, China
| | - Yanqing Wu
- Institute of Microelectronics and Key Laboratory of Microelectronic Devices and Circuits (MOE), Peking University, Beijing, 100871, China
- Wuhan National High Magnetic Field Center and School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan, 430074, China
- Frontiers Science Center for Nano-Optoelectronics, Peking University, Beijing, 100871, China
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36
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Xue F, Zhang C, Ma Y, Wen Y, He X, Yu B, Zhang X. Integrated Memory Devices Based on 2D Materials. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2022; 34:e2201880. [PMID: 35557021 DOI: 10.1002/adma.202201880] [Citation(s) in RCA: 19] [Impact Index Per Article: 9.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/27/2022] [Revised: 05/07/2022] [Indexed: 06/15/2023]
Abstract
With the advent of the Internet of Things and big data, massive data must be rapidly processed and stored within a short timeframe. This imposes stringent requirements on memory hardware implementation in terms of operation speed, energy consumption, and integration density. To fulfill these demands, 2D materials, which are excellent electronic building blocks, provide numerous possibilities for developing advanced memory device arrays with high performance, smart computing architectures, and desirable downscaling. Over the past few years, 2D-material-based memory-device arrays with different working mechanisms, including defects, filaments, charges, ferroelectricity, and spins, have been increasingly developed. These arrays can be used to implement brain-inspired computing or sensing with extraordinary performance, architectures, and functionalities. Here, recent research into integrated, state-of-the-art memory devices made from 2D materials, as well as their implications for brain-inspired computing are surveyed. The existing challenges at the array level are discussed, and the scope for future research is presented.
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Affiliation(s)
- Fei Xue
- Physical Science and Engineering Division, King Abdullah University of Science and Technology, Thuwal, 23955-6900, Saudi Arabia
- ZJU-Hangzhou Global Scientific and Technological Innovation Center, Zhejiang University, Hangzhou, 310020, P. R. China
- School of Micro-Nano Electronics, Zhejiang University, Hangzhou, 311200, P. R. China
| | - Chenhui Zhang
- Physical Science and Engineering Division, King Abdullah University of Science and Technology, Thuwal, 23955-6900, Saudi Arabia
| | - Yinchang Ma
- Physical Science and Engineering Division, King Abdullah University of Science and Technology, Thuwal, 23955-6900, Saudi Arabia
| | - Yan Wen
- Physical Science and Engineering Division, King Abdullah University of Science and Technology, Thuwal, 23955-6900, Saudi Arabia
| | - Xin He
- Physical Science and Engineering Division, King Abdullah University of Science and Technology, Thuwal, 23955-6900, Saudi Arabia
| | - Bin Yu
- ZJU-Hangzhou Global Scientific and Technological Innovation Center, Zhejiang University, Hangzhou, 310020, P. R. China
- School of Micro-Nano Electronics, Zhejiang University, Hangzhou, 311200, P. R. China
| | - Xixiang Zhang
- Physical Science and Engineering Division, King Abdullah University of Science and Technology, Thuwal, 23955-6900, Saudi Arabia
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37
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Park B, Hwang Y, Kwon O, Hwang S, Lee JA, Choi DH, Lee SK, Kim AR, Cho B, Kwon JD, Lee JI, Kim Y. Robust 2D MoS 2 Artificial Synapse Device Based on a Lithium Silicate Solid Electrolyte for High-Precision Analogue Neuromorphic Computing. ACS APPLIED MATERIALS & INTERFACES 2022; 14:53038-53047. [PMID: 36394301 DOI: 10.1021/acsami.2c14080] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/16/2023]
Abstract
High-precision artificial synaptic devices compatible with existing CMOS technology are essential for realizing robust neuromorphic hardware systems with reliable parallel analogue computation beyond the von Neumann serial digital computing architecture. However, critical issues related to reliability and variability, such as nonlinearity and asymmetric weight updates, have been great challenges in the implementation of artificial synaptic devices in practical neuromorphic hardware systems. Herein, a robust three-terminal two-dimensional (2D) MoS2 artificial synaptic device combined with a lithium silicate (LSO) solid-state electrolyte thin film is proposed. The rationally designed synaptic device exhibits excellent linearity and symmetry upon electrical potentiation and depression, benefiting from the reversible intercalation of Li ions into the MoS2 channel. In particular, extremely low cycle-to-cycle variations (3.01%) during long-term potentiation and depression processes over 500 pulses are achieved, causing statistical analogue discrete states. Thus, a high classification accuracy of 96.77% (close to the software baseline of 98%) is demonstrated in the Modified National Institute of Standards and Technology (MNIST) simulations. These results provide a future perspective for robust synaptic device architecture of lithium solid-state electrolytes stacked with 2D van der Waals layered channels for high-precision analogue neuromorphic computing systems.
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Affiliation(s)
- Byeongjin Park
- Department of Energy and Electronic Materials, Nanosurface Materials Division, Korea Institute of Materials Science (KIMS), 797 Changwondaero, Sungsan-gu, Changwon51508, Gyeongnam, Republic of Korea
- School of Materials Science and Engineering, Pusan National University, 2 Busandaehak-ro 63-beon-gil, Geumjeong-gu, Busan46241, Republic of Korea
| | - Yunjeong Hwang
- Department of Energy and Electronic Materials, Nanosurface Materials Division, Korea Institute of Materials Science (KIMS), 797 Changwondaero, Sungsan-gu, Changwon51508, Gyeongnam, Republic of Korea
| | - Ojun Kwon
- Department of Advanced Material Engineering, Chungbuk National University, 1 Chungdae-ro, Seowon-gu, Cheongju28644, Chungbuk, Republic of Korea
| | - Seungkwon Hwang
- Department of Energy and Electronic Materials, Nanosurface Materials Division, Korea Institute of Materials Science (KIMS), 797 Changwondaero, Sungsan-gu, Changwon51508, Gyeongnam, Republic of Korea
- School of Materials Science and Engineering, Pusan National University, 2 Busandaehak-ro 63-beon-gil, Geumjeong-gu, Busan46241, Republic of Korea
| | - Ju Ah Lee
- Department of Energy and Electronic Materials, Nanosurface Materials Division, Korea Institute of Materials Science (KIMS), 797 Changwondaero, Sungsan-gu, Changwon51508, Gyeongnam, Republic of Korea
- School of Materials Science and Engineering, Pusan National University, 2 Busandaehak-ro 63-beon-gil, Geumjeong-gu, Busan46241, Republic of Korea
| | - Dong-Hyeong Choi
- Department of Energy and Electronic Materials, Nanosurface Materials Division, Korea Institute of Materials Science (KIMS), 797 Changwondaero, Sungsan-gu, Changwon51508, Gyeongnam, Republic of Korea
- School of Materials Science and Engineering, Pusan National University, 2 Busandaehak-ro 63-beon-gil, Geumjeong-gu, Busan46241, Republic of Korea
| | - Seoung-Ki Lee
- School of Materials Science and Engineering, Pusan National University, 2 Busandaehak-ro 63-beon-gil, Geumjeong-gu, Busan46241, Republic of Korea
| | - Ah Ra Kim
- Department of Energy and Electronic Materials, Nanosurface Materials Division, Korea Institute of Materials Science (KIMS), 797 Changwondaero, Sungsan-gu, Changwon51508, Gyeongnam, Republic of Korea
| | - Byungjin Cho
- Department of Advanced Material Engineering, Chungbuk National University, 1 Chungdae-ro, Seowon-gu, Cheongju28644, Chungbuk, Republic of Korea
| | - Jung-Dae Kwon
- Department of Energy and Electronic Materials, Nanosurface Materials Division, Korea Institute of Materials Science (KIMS), 797 Changwondaero, Sungsan-gu, Changwon51508, Gyeongnam, Republic of Korea
| | - Je In Lee
- School of Materials Science and Engineering, Pusan National University, 2 Busandaehak-ro 63-beon-gil, Geumjeong-gu, Busan46241, Republic of Korea
| | - Yonghun Kim
- Department of Energy and Electronic Materials, Nanosurface Materials Division, Korea Institute of Materials Science (KIMS), 797 Changwondaero, Sungsan-gu, Changwon51508, Gyeongnam, Republic of Korea
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38
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Zhu Y, Liang JS, Shi X, Zhang Z. Full-Inorganic Flexible Ag 2S Memristor with Interface Resistance-Switching for Energy-Efficient Computing. ACS APPLIED MATERIALS & INTERFACES 2022; 14:43482-43489. [PMID: 36102604 PMCID: PMC9523614 DOI: 10.1021/acsami.2c11183] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/23/2022] [Accepted: 09/03/2022] [Indexed: 06/01/2023]
Abstract
Flexible memristor-based neural network hardware is capable of implementing parallel computation within the memory units, thus holding great promise for fast and energy-efficient neuromorphic computing in flexible electronics. However, the current flexible memristor (FM) is mostly operated with a filamentary mechanism, which demands large energy consumption in both setting and computing. Herein, we report an Ag2S-based FM working with distinct interface resistance-switching (RS) mechanism. In direct contrast to conventional filamentary memristors, RS in this Ag2S device is facilitated by the space charge-induced Schottky barrier modification at the Ag/Ag2S interface, which can be achieved with the setting voltage below the threshold voltage required for filament formation. The memristor based on interface RS exhibits 105 endurance cycles and 104 s retention under bending condition, and multiple level conductive states with exceptional tunability and stability. Since interface RS does not require the formation of a continuous Ag filament via Ag+ ion reduction, it can achieve an ultralow switching energy of ∼0.2 fJ. Furthermore, a hardware-based image processing with a software-comparable computing accuracy is demonstrated using the flexible Ag2S memristor array. And the image processing with interface RS indeed consumes 2 orders of magnitude lower power than that with filamentary RS on the same hardware. This study demonstrates a new resistance-switching mechanism for energy-efficient flexible neural network hardware.
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Affiliation(s)
- Yuan Zhu
- Division
of Solid-State Electronics, Department of Electrical Engineering, Uppsala University, Uppsala 75121, Sweden
| | - Jia-sheng Liang
- State
Key Laboratory of High Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics, Chinese Academy of
Sciences, Shanghai 200050, China
| | - Xun Shi
- State
Key Laboratory of High Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics, Chinese Academy of
Sciences, Shanghai 200050, China
| | - Zhen Zhang
- Division
of Solid-State Electronics, Department of Electrical Engineering, Uppsala University, Uppsala 75121, Sweden
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39
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Liu X, Ting J, He Y, Fiagbenu MMA, Zheng J, Wang D, Frost J, Musavigharavi P, Esteves G, Kisslinger K, Anantharaman SB, Stach EA, Olsson RH, Jariwala D. Reconfigurable Compute-In-Memory on Field-Programmable Ferroelectric Diodes. NANO LETTERS 2022; 22:7690-7698. [PMID: 36121208 DOI: 10.1021/acs.nanolett.2c03169] [Citation(s) in RCA: 5] [Impact Index Per Article: 2.5] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
The deluge of sensors and data generating devices has driven a paradigm shift in modern computing from arithmetic-logic centric to data-centric processing. Data-centric processing require innovations at the device level to enable novel compute-in-memory (CIM) operations. A key challenge in the construction of CIM architectures is the conflicting trade-off between the performance and their flexibility for various essential data operations. Here, we present a transistor-free CIM architecture that permits storage, search, and neural network operations on sub-50 nm thick Aluminum Scandium Nitride ferroelectric diodes (FeDs). Our circuit designs and devices can be directly integrated on top of Silicon microprocessors in a scalable process. By leveraging the field-programmability, nonvolatility, and nonlinearity of FeDs, search operations are demonstrated with a cell footprint <0.12 μm2 when projected onto 45 nm node technology. We further demonstrate neural network operations with 4-bit operation using FeDs. Our results highlight FeDs as candidates for efficient and multifunctional CIM platforms.
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Affiliation(s)
- Xiwen Liu
- Electrical and Systems Engineering, University of Pennsylvania, Philadelphia, Pennsylvania 19104, United States
| | - John Ting
- Electrical and Systems Engineering, University of Pennsylvania, Philadelphia, Pennsylvania 19104, United States
| | - Yunfei He
- Electrical and Systems Engineering, University of Pennsylvania, Philadelphia, Pennsylvania 19104, United States
| | | | - Jeffrey Zheng
- Materials Science and Engineering, University of Pennsylvania, Philadelphia, Pennsylvania 19104, United States
| | - Dixiong Wang
- Electrical and Systems Engineering, University of Pennsylvania, Philadelphia, Pennsylvania 19104, United States
| | - Jonathan Frost
- Electrical and Systems Engineering, University of Pennsylvania, Philadelphia, Pennsylvania 19104, United States
| | - Pariasadat Musavigharavi
- Electrical and Systems Engineering, University of Pennsylvania, Philadelphia, Pennsylvania 19104, United States
- Materials Science and Engineering, University of Pennsylvania, Philadelphia, Pennsylvania 19104, United States
| | - Giovanni Esteves
- Microsystems Engineering, Science and Applications (MESA), Sandia National Laboratories, Albuquerque, New Mexico 87185, United States
| | - Kim Kisslinger
- Brookhaven National Laboratory, Center for Functional Nanomaterials, Upton, New York 11973, United States
| | - Surendra B Anantharaman
- Electrical and Systems Engineering, University of Pennsylvania, Philadelphia, Pennsylvania 19104, United States
| | - Eric A Stach
- Materials Science and Engineering, University of Pennsylvania, Philadelphia, Pennsylvania 19104, United States
- Laboratory for Research on the Structure of Matter, University of Pennsylvania, Philadelphia, Pennsylvania 19104, United States
| | - Roy H Olsson
- Electrical and Systems Engineering, University of Pennsylvania, Philadelphia, Pennsylvania 19104, United States
| | - Deep Jariwala
- Electrical and Systems Engineering, University of Pennsylvania, Philadelphia, Pennsylvania 19104, United States
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40
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Li R, Song M, Guo Z, Li S, Duan W, Zhang S, Tian Y, Chen Z, Bao Y, Cui J, Xu Y, Wang Y, Tong W, Yuan Z, Cui Y, Xi L, Feng D, Yang X, Zou X, Hong J, You L. In-Memory Mathematical Operations with Spin-Orbit Torque Devices. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2022; 9:e2202478. [PMID: 35811307 PMCID: PMC9443454 DOI: 10.1002/advs.202202478] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 04/28/2022] [Revised: 05/28/2022] [Indexed: 06/15/2023]
Abstract
Analog arithmetic operations are the most fundamental mathematical operations used in image and signal processing as well as artificial intelligence (AI). In-memory computing (IMC) offers a high performance and energy-efficient computing paradigm. To date, in-memory analog arithmetic operations with emerging nonvolatile devices are usually implemented using discrete components, which limits the scalability and blocks large scale integration. Here, a prototypical implementation of in-memory analog arithmetic operations (summation, subtraction and multiplication) is experimentally demonstrated, based on in-memory electrical current sensing units using spin-orbit torque (SOT) devices. The proposed structures for analog arithmetic operations are smaller than the state-of-the-art complementary metal oxide semiconductor (CMOS) counterparts by several orders of magnitude. Moreover, data to be processed and computing results can be locally stored, or the analog computing can be done in the nonvolatile SOT devices, which are exploited to experimentally implement the image edge detection and signal amplitude modulation with a simple structure. Furthermore, an artificial neural network (ANN) with SOT devices based synapses is constructed to realize pattern recognition with high accuracy of ≈95%.
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Affiliation(s)
- Ruofan Li
- School of Optical and Electronic Information & Wuhan National Laboratory for OptoelectronicsHuazhong University of Science and TechnologyWuhan430074China
| | - Min Song
- Faculty of Physics and Electronic ScienceHubei UniversityWuhan430062China
| | - Zhe Guo
- School of Optical and Electronic Information & Wuhan National Laboratory for OptoelectronicsHuazhong University of Science and TechnologyWuhan430074China
| | - Shihao Li
- School of Optical and Electronic Information & Wuhan National Laboratory for OptoelectronicsHuazhong University of Science and TechnologyWuhan430074China
| | - Wei Duan
- Faculty of Physics and Electronic ScienceHubei UniversityWuhan430062China
| | - Shuai Zhang
- School of Optical and Electronic Information & Wuhan National Laboratory for OptoelectronicsHuazhong University of Science and TechnologyWuhan430074China
| | - Yufeng Tian
- School of PhysicsShandong UniversityJinan250100China
| | - Zhenjiang Chen
- School of Optical and Electronic Information & Wuhan National Laboratory for OptoelectronicsHuazhong University of Science and TechnologyWuhan430074China
| | - Yi Bao
- School of Optical and Electronic Information & Wuhan National Laboratory for OptoelectronicsHuazhong University of Science and TechnologyWuhan430074China
| | - Jinsong Cui
- School of Optical and Electronic Information & Wuhan National Laboratory for OptoelectronicsHuazhong University of Science and TechnologyWuhan430074China
| | - Yan Xu
- School of Optical and Electronic Information & Wuhan National Laboratory for OptoelectronicsHuazhong University of Science and TechnologyWuhan430074China
| | - Yaoyuan Wang
- School of Optical and Electronic Information & Wuhan National Laboratory for OptoelectronicsHuazhong University of Science and TechnologyWuhan430074China
| | - Wei Tong
- School of Computer Science and Technology & Wuhan National Laboratory for OptoelectronicsHuazhong University of Science and TechnologyWuhan430074China
| | - Zhe Yuan
- Department of PhysicsBeijing Normal UniversityBeijing100875China
| | - Yan Cui
- Institute of MicroelectronicsUniversity of Chinese Academy of SciencesBeijing100029China
| | - Li Xi
- School of Physical Science and TechnologyLanzhou UniversityLanzhou730000China
| | - Dan Feng
- School of Computer Science and Technology & Wuhan National Laboratory for OptoelectronicsHuazhong University of Science and TechnologyWuhan430074China
| | - Xiaofei Yang
- School of Optical and Electronic Information & Wuhan National Laboratory for OptoelectronicsHuazhong University of Science and TechnologyWuhan430074China
| | - Xuecheng Zou
- School of Optical and Electronic Information & Wuhan National Laboratory for OptoelectronicsHuazhong University of Science and TechnologyWuhan430074China
| | - Jeongmin Hong
- School of Optical and Electronic Information & Wuhan National Laboratory for OptoelectronicsHuazhong University of Science and TechnologyWuhan430074China
| | - Long You
- School of Optical and Electronic Information & Wuhan National Laboratory for OptoelectronicsHuazhong University of Science and TechnologyWuhan430074China
- Shenzhen Huazhong University of Science and Technology Research InstituteShenzhen518000China
- Wuhan National High Magnetic Field CenterHuazhong University of Science and TechnologyWuhan430074China
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41
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Tang L, Teng C, Xu R, Zhang Z, Khan U, Zhang R, Luo Y, Nong H, Liu B, Cheng HM. Controlled Growth of Wafer-Scale Transition Metal Dichalcogenides with a Vertical Composition Gradient for Artificial Synapses with High Linearity. ACS NANO 2022; 16:12318-12327. [PMID: 35913980 DOI: 10.1021/acsnano.2c03263] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
Artificial synapses are promising for dealing with large amounts of data computing. Great progress has been made recently in terms of improving the on/off current ratio, the number of states, and the energy efficiency of synapse devices. However, the nonlinear weight update behavior of a synapse caused by the uncertain direction of the conductive filament leads to complex weight modulation, which degrades the delivery accuracy of information. Here we propose a strategy to improve the weight update behavior of synapses using chemical-vapor-deposition-grown transition metal dichalcogenides (TMDCs) with a vertical composition gradient, where the sulfur concentration decreases gradually along the thickness direction of TMDCs and thus forms a certain direction of the conduction filament for synapse devices. It is worth noting that the devices show an excellent linear conductance of potentiation and depression with a high linearity of 0.994 (surpassing most state-of-the-art synapses), have a large number of states, and are able to fabricate synapse arrays with wafer-scale. Furthermore, the devices based on the TMDCs with the vertical composition gradient exhibit an asymmetric feature of potentiation and depression behaviors with high linearity and follow the simulated linear Leaky ReLU function, resulting in a high recognition accuracy of 94.73%, which overcomes the unreliability issue in the Sigmoid function due to the vanishing gradient phenomenon. This study not only provides a universal method to grow TMDCs with a vertical composition gradient but also contributes to exploring highly linear synapses toward neuromorphic computing.
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Affiliation(s)
- Lei Tang
- Shenzhen Geim Graphene Center, Tsinghua-Berkeley Shenzhen Institute and Institute of Materials Research, Shenzhen International Graduate School, Tsinghua University, Shenzhen 518055, People's Republic of China
| | - Changjiu Teng
- Shenzhen Geim Graphene Center, Tsinghua-Berkeley Shenzhen Institute and Institute of Materials Research, Shenzhen International Graduate School, Tsinghua University, Shenzhen 518055, People's Republic of China
| | - Runzhang Xu
- Shenzhen Geim Graphene Center, Tsinghua-Berkeley Shenzhen Institute and Institute of Materials Research, Shenzhen International Graduate School, Tsinghua University, Shenzhen 518055, People's Republic of China
| | - Zehao Zhang
- Shenzhen Geim Graphene Center, Tsinghua-Berkeley Shenzhen Institute and Institute of Materials Research, Shenzhen International Graduate School, Tsinghua University, Shenzhen 518055, People's Republic of China
| | - Usman Khan
- Shenzhen Geim Graphene Center, Tsinghua-Berkeley Shenzhen Institute and Institute of Materials Research, Shenzhen International Graduate School, Tsinghua University, Shenzhen 518055, People's Republic of China
| | - Rongjie Zhang
- Shenzhen Geim Graphene Center, Tsinghua-Berkeley Shenzhen Institute and Institute of Materials Research, Shenzhen International Graduate School, Tsinghua University, Shenzhen 518055, People's Republic of China
| | - Yuting Luo
- Shenzhen Geim Graphene Center, Tsinghua-Berkeley Shenzhen Institute and Institute of Materials Research, Shenzhen International Graduate School, Tsinghua University, Shenzhen 518055, People's Republic of China
| | - Huiyu Nong
- Shenzhen Geim Graphene Center, Tsinghua-Berkeley Shenzhen Institute and Institute of Materials Research, Shenzhen International Graduate School, Tsinghua University, Shenzhen 518055, People's Republic of China
| | - Bilu Liu
- Shenzhen Geim Graphene Center, Tsinghua-Berkeley Shenzhen Institute and Institute of Materials Research, Shenzhen International Graduate School, Tsinghua University, Shenzhen 518055, People's Republic of China
| | - Hui-Ming Cheng
- Shenzhen Geim Graphene Center, Tsinghua-Berkeley Shenzhen Institute and Institute of Materials Research, Shenzhen International Graduate School, Tsinghua University, Shenzhen 518055, People's Republic of China
- Shenyang National Laboratory for Materials Sciences, Institute of Metal Research, Chinese Academy of Sciences, Shenyang 110016, People's Republic of China
- Faculty of Materials and Engineering/Institute of Technology for Carbon Neutrality, Shenzhen Institute of Advanced Technology, Chinese Academy of Sciences, Shenzhen 518055, People's Republic of China
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42
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Poddar S, Zhang Y, Chen Z, Ma Z, Fu Y, Ding Y, Chan CLJ, Zhang Q, Zhang D, Song Z, Fan Z. Image processing with a multi-level ultra-fast three dimensionally integrated perovskite nanowire array. NANOSCALE HORIZONS 2022; 7:759-769. [PMID: 35638535 DOI: 10.1039/d2nh00183g] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
Besides its ubiquitous applications in optoelectronics, halide-perovskites (HPs) have also carved a niche in the domain of resistive switching memories (Re-RAMs). However owing to the material and electrical instability challenges faced by HP thin-films, rarely perovskite Re-RAMs are used to experimentally demonstrate data processing which is a fundamental requirement for neuromorphic applications. Here, for the first time, lead-free, ultrahigh density HP nanowire (NW) array Re-RAM has been utilized to demonstrate image processing via design of convolutional kernels. The devices exhibited superior switching characteristics including a high endurance of 5 × 106 cycles, an ultra-fast erasing and writing speed of 900 ps and 2 ns, respectively, and a retention time >5 × 104 s for the resistances. The work is bolstered by an in-depth mechanistic study and first-principles simulations which provide evidence of electrochemical metallization triggering the switching. Employing the robust multi-level switching behaviour, image processing functions of embossing, outlining and sharpening were successfully implemented.
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Affiliation(s)
- Swapnadeep Poddar
- Department of Electronic & Computer Engineering, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong SAR, China.
| | - Yuting Zhang
- Department of Electronic & Computer Engineering, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong SAR, China.
| | - Zhesi Chen
- Department of Electronic & Computer Engineering, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong SAR, China.
| | - Zichao Ma
- Department of Electronic & Computer Engineering, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong SAR, China.
| | - Yu Fu
- Department of Electronic & Computer Engineering, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong SAR, China.
| | - Yucheng Ding
- Department of Electronic & Computer Engineering, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong SAR, China.
| | - Chak Lam Jonathan Chan
- Department of Electronic & Computer Engineering, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong SAR, China.
| | - Qianpeng Zhang
- Department of Electronic & Computer Engineering, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong SAR, China.
| | - Daquan Zhang
- Department of Electronic & Computer Engineering, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong SAR, China.
| | - Zhitang Song
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Micro-system and Information Technology, Chinese Academy of Sciences, Shanghai, 200050, China.
| | - Zhiyong Fan
- Department of Electronic & Computer Engineering, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong SAR, China.
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43
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Ismail M, Mahata C, Kang M, Kim S. Robust Resistive Switching Constancy and Quantum Conductance in High-k Dielectric-Based Memristor for Neuromorphic Engineering. NANOSCALE RESEARCH LETTERS 2022; 17:61. [PMID: 35749003 PMCID: PMC9232664 DOI: 10.1186/s11671-022-03699-z] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 02/28/2022] [Accepted: 06/14/2022] [Indexed: 06/15/2023]
Abstract
For neuromorphic computing and high-density data storage memory, memristive devices have recently gained a lot of interest. So far, memristive devices have suffered from switching parameter instability, such as distortions in resistance values of low- and high-resistance states (LRSs and HRSs), dispersion in working voltage (set and reset voltages), and a small ratio of high and low resistance, among other issues. In this context, interface engineering is a critical technique for addressing the variation issues that obstruct the use of memristive devices. Herein, we engineered a high band gap, low Gibbs free energy Al2O3 interlayer between the HfO2 switching layer and the tantalum oxy-nitride electrode (TaN) bottom electrode to operate as an oxygen reservoir, increasing the resistance ratio between HRS and LRS and enabling multilayer data storage. The Pt/HfO2/Al2O3/TaN memristive device demonstrates analog bipolar resistive switching behavior with a potential ratio of HRS and LRS of > 105 and the ability to store multi-level data with consistent retention and uniformity. On set and reset voltages, statistical analysis is used; the mean values (µ) of set and reset voltages are determined to be - 2.7 V and + 1.9 V, respectively. There is a repeatable durability over DC 1000 cycles, 105 AC cycles, and a retention time of 104 s at room temperature. Quantum conductance was obtained by increasing the reset voltage with step of 0.005 V with delay time of 0.1 s. Memristive device has also displayed synaptic properties like as potentiation/depression and paired-pulse facilitation (PPF). Results show that engineering of interlayer is an effective approach to improve the uniformity, ratio of high and low resistance, and multiple conductance quantization states and paves the way for research into neuromorphic synapses.
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Affiliation(s)
- Muhammad Ismail
- Division of Electronics and Electrical Engineering, Dongguk University, Seoul, 04620, Republic of Korea
| | - Chandreswar Mahata
- Division of Electronics and Electrical Engineering, Dongguk University, Seoul, 04620, Republic of Korea
| | - Myounggon Kang
- Department of Electronics Engineering, Korea National University of Transportation, Chungju-si, 27469, Republic of Korea.
| | - Sungjun Kim
- Division of Electronics and Electrical Engineering, Dongguk University, Seoul, 04620, Republic of Korea.
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44
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Seo D, Ryou H, Hong SW, Seo JH, Shin M, Hwang WS. Synaptic Current Response of a Liquid Ga Electrode via a Surface Electrochemical Redox Reaction in a NaOH Solution. ACS OMEGA 2022; 7:19872-19878. [PMID: 35721935 PMCID: PMC9202024 DOI: 10.1021/acsomega.2c01645] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 03/18/2022] [Accepted: 05/20/2022] [Indexed: 06/15/2023]
Abstract
An ionic device using a liquid Ga electrode in a 1 M NaOH solution is proposed to generate artificial neural spike signals. The oxidation and reduction at the liquid Ga surface were investigated for different bias voltages at 50 °C. When the positive sweep voltage from the starting voltage (V S) of 1 V was applied to the Ga electrode, the oxidation current flowed immediately and decreased exponentially with time. The spike and decay current behavior resembled the polarization and depolarization at the influx and extrusion of Ca2+ in biological synapses. Different average decay times of ∼81 and ∼310 ms were implemented for V S of -2 and -5 V, respectively, to mimic the synaptic responses to short- and long-term plasticity; these decay states can be exploited for application in binary electrochemical memory devices. The oxidation mechanism of liquid Ga was studied. The differences in Ga ion concentration due to V S led to differences in oxidation behavior. Our device is beneficial for the organ cell-machine interface system because liquid Ga is biocompatible and flexible; thus, it can be applied in biocompatible and flexible neuromorphic device development for neuroprosthetics, human cell-machine interface formation, and personal health care monitoring.
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Affiliation(s)
- Dahee Seo
- Department
of Materials Science and Engineering, Korea
Aerospace University, Goyang 10540, Republic of Korea
- Smart
Drone Convergence, Korea Aerospace University, Goyang 10540, Republic of Korea
| | - Heejoong Ryou
- Department
of Materials Science and Engineering, Korea
Aerospace University, Goyang 10540, Republic of Korea
| | - Suck Won Hong
- Department
of Cogno-Mechatronics Engineering, Department of Optics and Mechatronics
Engineering, Pusan National University, Busan 46241, Republic of Korea
| | - Jong Hyun Seo
- Department
of Materials Science and Engineering, Korea
Aerospace University, Goyang 10540, Republic of Korea
| | - Myunghun Shin
- School
of Electronics and Information Engineering, Korea Aerospace University, Goyang 10540, Republic of Korea
| | - Wan Sik Hwang
- Department
of Materials Science and Engineering, Korea
Aerospace University, Goyang 10540, Republic of Korea
- Smart
Drone Convergence, Korea Aerospace University, Goyang 10540, Republic of Korea
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45
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Qiao Y, Zhao J, Sun H, Song Z, Xue Y, Li J, Song S. Pt Modified Sb 2Te 3 Alloy Ensuring High-Performance Phase Change Memory. NANOMATERIALS 2022; 12:nano12121996. [PMID: 35745335 PMCID: PMC9229571 DOI: 10.3390/nano12121996] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 04/09/2022] [Revised: 05/06/2022] [Accepted: 05/13/2022] [Indexed: 12/04/2022]
Abstract
Phase change memory (PCM), due to the advantages in capacity and endurance, has the opportunity to become the next generation of general−purpose memory. However, operation speed and data retention are still bottlenecks for PCM development. The most direct way to solve this problem is to find a material with high speed and good thermal stability. In this paper, platinum doping is proposed to improve performance. The 10-year data retention temperature of the doped material is up to 104 °C; the device achieves an operation speed of 6 ns and more than 3 × 105 operation cycles. An excellent performance was derived from the reduced grain size (10 nm) and the smaller density change rate (4.76%), which are less than those of Ge2Sb2Te5 (GST) and Sb2Te3. Hence, platinum doping is an effective approach to improve the performance of PCM and provide both good thermal stability and high operation speed.
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Affiliation(s)
- Yang Qiao
- The Microelectronic Research & Development Center, Shanghai University, Shanghai 200444, China; (Y.Q.); (H.S.)
| | - Jin Zhao
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information, Chinese Academy of Sciences, Shanghai 200050, China; (J.Z.); (Z.S.)
- University of Chinese Academy of Sciences, Beijing 100049, China
| | - Haodong Sun
- The Microelectronic Research & Development Center, Shanghai University, Shanghai 200444, China; (Y.Q.); (H.S.)
| | - Zhitang Song
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information, Chinese Academy of Sciences, Shanghai 200050, China; (J.Z.); (Z.S.)
| | - Yuan Xue
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information, Chinese Academy of Sciences, Shanghai 200050, China; (J.Z.); (Z.S.)
- Correspondence: (Y.X.); (J.L.); (S.S.)
| | - Jiao Li
- The Microelectronic Research & Development Center, Shanghai University, Shanghai 200444, China; (Y.Q.); (H.S.)
- Department of Mechatronics Engineering and Automation, Shanghai University, Shanghai 200444, China
- Correspondence: (Y.X.); (J.L.); (S.S.)
| | - Sannian Song
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information, Chinese Academy of Sciences, Shanghai 200050, China; (J.Z.); (Z.S.)
- Correspondence: (Y.X.); (J.L.); (S.S.)
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46
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Banerjee W, Kashir A, Kamba S. Hafnium Oxide (HfO 2 ) - A Multifunctional Oxide: A Review on the Prospect and Challenges of Hafnium Oxide in Resistive Switching and Ferroelectric Memories. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2022; 18:e2107575. [PMID: 35510954 DOI: 10.1002/smll.202107575] [Citation(s) in RCA: 16] [Impact Index Per Article: 8.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/26/2022] [Revised: 03/24/2022] [Indexed: 06/14/2023]
Abstract
Hafnium oxide (HfO2 ) is one of the mature high-k dielectrics that has been standing strong in the memory arena over the last two decades. Its dielectric properties have been researched rigorously for the development of flash memory devices. In this review, the application of HfO2 in two main emerging nonvolatile memory technologies is surveyed, namely resistive random access memory and ferroelectric memory. How the properties of HfO2 equip the former to achieve superlative performance with high-speed reliable switching, excellent endurance, and retention is discussed. The parameters to control HfO2 domains are further discussed, which can unleash the ferroelectric properties in memory applications. Finally, the prospect of HfO2 materials in emerging applications, such as high-density memory and neuromorphic devices are examined, and the various challenges of HfO2 -based resistive random access memory and ferroelectric memory devices are addressed with a future outlook.
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Affiliation(s)
- Writam Banerjee
- Center for Single Atom-based Semiconductor Device, Department of Material Science and Engineering, Pohang University of Science and Technology (POSTECH), Pohang, 37673, Republic of Korea
| | - Alireza Kashir
- Institute of Physics of the Czech Academy of Sciences, Na Slovance 2, Prague 8, 182 21, Czech Republic
| | - Stanislav Kamba
- Institute of Physics of the Czech Academy of Sciences, Na Slovance 2, Prague 8, 182 21, Czech Republic
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47
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Zhang K, Jia X, Cao K, Wang J, Zhang Y, Lin K, Chen L, Feng X, Zheng Z, Zhang Z, Zhang Y, Zhao W. High On/Off Ratio Spintronic Multi-Level Memory Unit for Deep Neural Network. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2022; 9:e2103357. [PMID: 35229495 PMCID: PMC9069383 DOI: 10.1002/advs.202103357] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 08/03/2021] [Revised: 01/17/2022] [Indexed: 06/14/2023]
Abstract
Spintronic devices are considered as one of the most promising technologies for non-volatile memory and computing. However, two crucial drawbacks, that is, lack of intrinsic multi-level operation and low on/off ratio, greatly hinder their further application for advanced computing concepts, such as deep neural network (DNN) accelerator. In this paper, a spintronic multi-level memory unit with high on/off ratio is proposed by integrating several series-connected magnetic tunnel junctions (MTJs) with perpendicular magnetic anisotropy (PMA) and a Schottky diode in parallel. Due to the rectification effect on the PMA MTJ, an on/off ratio over 100, two orders of magnitude higher than intrinsic values, is obtained under proper proportion of alternating current and direct current. Multiple resistance states are stably achieved and can be reconfigured by spin transfer torque effect. A computing-in-memory architecture based DNN accelerator for image classification with the experimental parameters of this proposal to evidence its application potential is also evaluated. This work can satisfy the rigorous requirements of DNN for memory unit and promote the development of high-accuracy and robust artificial intelligence applications.
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Affiliation(s)
- Kun Zhang
- Fert Beijing Research InstituteMIIT Key Laboratory of SpintronicsSchool of Integrated Circuit Science and EngineeringBeihang UniversityBeijing100191P. R. China
- Beihang‐Goertek Joint Microelectronics InstituteQingdao Research InstituteBeihang UniversityQingdao266101P. R. China
| | - Xiaotao Jia
- Fert Beijing Research InstituteMIIT Key Laboratory of SpintronicsSchool of Integrated Circuit Science and EngineeringBeihang UniversityBeijing100191P. R. China
- Beihang Hangzhou Innovation Institute YuhangXixi Octagon City, Yuhang DistrictHangzhou310023P. R. China
| | - Kaihua Cao
- Fert Beijing Research InstituteMIIT Key Laboratory of SpintronicsSchool of Integrated Circuit Science and EngineeringBeihang UniversityBeijing100191P. R. China
- Beihang‐Goertek Joint Microelectronics InstituteQingdao Research InstituteBeihang UniversityQingdao266101P. R. China
| | - Jinkai Wang
- Fert Beijing Research InstituteMIIT Key Laboratory of SpintronicsSchool of Integrated Circuit Science and EngineeringBeihang UniversityBeijing100191P. R. China
| | - Yue Zhang
- Fert Beijing Research InstituteMIIT Key Laboratory of SpintronicsSchool of Integrated Circuit Science and EngineeringBeihang UniversityBeijing100191P. R. China
- Nanoelectronics Science and Technology CenterHefei Innovation Research InstituteBeihang UniversityHefei230013P. R. China
| | - Kelian Lin
- Fert Beijing Research InstituteMIIT Key Laboratory of SpintronicsSchool of Integrated Circuit Science and EngineeringBeihang UniversityBeijing100191P. R. China
| | - Lei Chen
- Fert Beijing Research InstituteMIIT Key Laboratory of SpintronicsSchool of Integrated Circuit Science and EngineeringBeihang UniversityBeijing100191P. R. China
| | - Xueqiang Feng
- Fert Beijing Research InstituteMIIT Key Laboratory of SpintronicsSchool of Integrated Circuit Science and EngineeringBeihang UniversityBeijing100191P. R. China
| | - Zhenyi Zheng
- Fert Beijing Research InstituteMIIT Key Laboratory of SpintronicsSchool of Integrated Circuit Science and EngineeringBeihang UniversityBeijing100191P. R. China
| | - Zhizhong Zhang
- Fert Beijing Research InstituteMIIT Key Laboratory of SpintronicsSchool of Integrated Circuit Science and EngineeringBeihang UniversityBeijing100191P. R. China
| | - Youguang Zhang
- Fert Beijing Research InstituteMIIT Key Laboratory of SpintronicsSchool of Integrated Circuit Science and EngineeringBeihang UniversityBeijing100191P. R. China
| | - Weisheng Zhao
- Fert Beijing Research InstituteMIIT Key Laboratory of SpintronicsSchool of Integrated Circuit Science and EngineeringBeihang UniversityBeijing100191P. R. China
- Beihang‐Goertek Joint Microelectronics InstituteQingdao Research InstituteBeihang UniversityQingdao266101P. R. China
- Nanoelectronics Science and Technology CenterHefei Innovation Research InstituteBeihang UniversityHefei230013P. R. China
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48
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Jia M, Guo P, Wang W, Yu A, Zhang Y, Wang ZL, Zhai J. Tactile tribotronic reconfigurable p-n junctions for artificial synapses. Sci Bull (Beijing) 2022; 67:803-812. [PMID: 36546233 DOI: 10.1016/j.scib.2021.12.014] [Citation(s) in RCA: 5] [Impact Index Per Article: 2.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 10/05/2021] [Revised: 11/13/2021] [Accepted: 12/05/2021] [Indexed: 01/06/2023]
Abstract
The emulation of biological synapses with learning and memory functions and versatile plasticity is significantly promising for neuromorphic computing systems. Here, a robust and continuously adjustable mechanoplastic semifloating-gate transistor is demonstrated based on an integrated graphene/hexagonal boron nitride/tungsten diselenide van der Waals heterostructure and a triboelectric nanogenerator (TENG). The working states (p-n junction or n+-n junction) can be manipulated and switched under the sophisticated modulation of triboelectric potential derived from mechanical actions, which is attributed to carriers trapping and detrapping in the graphene layer. Furthermore, a reconfigurable artificial synapse is constructed based on such mechanoplastic transistor that can simulate typical synaptic plasticity and implement dynamic control correlations in each response mode by further designing the amplitude and duration. The artificial synapse can work with ultra-low energy consumption at 74.2 fJ per synaptic event and the extended synaptic weights. Under the synergetic effect of the semifloating gate, the synaptic device can enable successive mechanical facilitation/depression, short-/long-term plasticity and learning-experience behavior, exhibiting the mechanical behavior derived synaptic plasticity. Such reconfigurable and mechanoplastic features provide an insight into the applications of energy-efficient and real-time interactive neuromodulation in the future artificial intelligent system beyond von Neumann architecture.
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Affiliation(s)
- Mengmeng Jia
- CAS Center for Excellence in Nanoscience, Beijing Key Laboratory of Micro-nano Energy and Sensor, Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences, Beijing 100083, China; School of Nanoscience and Technology, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Pengwen Guo
- CAS Center for Excellence in Nanoscience, Beijing Key Laboratory of Micro-nano Energy and Sensor, Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences, Beijing 100083, China; School of Nanoscience and Technology, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Wei Wang
- CAS Center for Excellence in Nanoscience, Beijing Key Laboratory of Micro-nano Energy and Sensor, Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences, Beijing 100083, China; School of Nanoscience and Technology, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Aifang Yu
- CAS Center for Excellence in Nanoscience, Beijing Key Laboratory of Micro-nano Energy and Sensor, Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences, Beijing 100083, China; School of Nanoscience and Technology, University of Chinese Academy of Sciences, Beijing 100049, China; Center on Nanoenergy Research, School of Physical Science and Technology, Guangxi University, Nanning 530004, China
| | - Yufei Zhang
- CAS Center for Excellence in Nanoscience, Beijing Key Laboratory of Micro-nano Energy and Sensor, Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences, Beijing 100083, China; School of Nanoscience and Technology, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Zhong Lin Wang
- CAS Center for Excellence in Nanoscience, Beijing Key Laboratory of Micro-nano Energy and Sensor, Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences, Beijing 100083, China; School of Nanoscience and Technology, University of Chinese Academy of Sciences, Beijing 100049, China; School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, GA 30332, USA.
| | - Junyi Zhai
- CAS Center for Excellence in Nanoscience, Beijing Key Laboratory of Micro-nano Energy and Sensor, Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences, Beijing 100083, China; School of Nanoscience and Technology, University of Chinese Academy of Sciences, Beijing 100049, China; Center on Nanoenergy Research, School of Physical Science and Technology, Guangxi University, Nanning 530004, China.
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49
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Design and Simulation of Logic-In-Memory Inverter Based on a Silicon Nanowire Feedback Field-Effect Transistor. MICROMACHINES 2022; 13:mi13040590. [PMID: 35457895 PMCID: PMC9028487 DOI: 10.3390/mi13040590] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 03/11/2022] [Revised: 03/31/2022] [Accepted: 04/07/2022] [Indexed: 02/05/2023]
Abstract
In this paper, we propose a logic-in-memory (LIM) inverter comprising a silicon nanowire (SiNW) n-channel feedback field-effect transistor (n-FBFET) and a SiNW p-channel metal oxide semiconductor field-effect transistor (p-MOSFET). The hybrid logic and memory operations of the LIM inverter were investigated by mixed-mode technology computer-aided design simulations. Our LIM inverter exhibited a high voltage gain of 296.8 (V/V) when transitioning from logic ‘1’ to ‘0’ and 7.9 (V/V) when transitioning from logic ‘0’ to ‘1’, while holding calculated logic at zero input voltage. The energy band diagrams of the n-FBFET structure demonstrated that the holding operation of the inverter was implemented by controlling the positive feedback loop. Moreover, the output logic can remain constant without any supply voltage, resulting in zero static power consumption.
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50
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Deshmukh S, Rojo MM, Yalon E, Vaziri S, Koroglu C, Islam R, Iglesias RA, Saraswat K, Pop E. Direct measurement of nanoscale filamentary hot spots in resistive memory devices. SCIENCE ADVANCES 2022; 8:eabk1514. [PMID: 35353574 PMCID: PMC8967235 DOI: 10.1126/sciadv.abk1514] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/24/2021] [Accepted: 02/04/2022] [Indexed: 05/19/2023]
Abstract
Resistive random access memory (RRAM) is an important candidate for both digital, high-density data storage and for analog, neuromorphic computing. RRAM operation relies on the formation and rupture of nanoscale conductive filaments that carry enormous current densities and whose behavior lies at the heart of this technology. Here, we directly measure the temperature of these filaments in realistic RRAM with nanoscale resolution using scanning thermal microscopy. We use both conventional metal and ultrathin graphene electrodes, which enable the most thermally intimate measurement to date. Filaments can reach 1300°C during steady-state operation, but electrode temperatures seldom exceed 350°C because of thermal interface resistance. These results reveal the importance of thermal engineering for nanoscale RRAM toward ultradense data storage or neuromorphic operation.
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Affiliation(s)
- Sanchit Deshmukh
- Department of Electrical Engineering, Stanford University, Stanford, CA 94305, USA
| | - Miguel Muñoz Rojo
- Department of Electrical Engineering, Stanford University, Stanford, CA 94305, USA
- Instituto de Micro y Nanotecnología, IMN-CNM, CSIC (CEI UAM+CSIC), Madrid, Spain
| | - Eilam Yalon
- Department of Electrical Engineering, Stanford University, Stanford, CA 94305, USA
- Department of Electrical Engineering, Technion–Israel Institute of Technology, Haifa 32000, Israel
| | - Sam Vaziri
- Department of Electrical Engineering, Stanford University, Stanford, CA 94305, USA
| | - Cagil Koroglu
- Department of Electrical Engineering, Stanford University, Stanford, CA 94305, USA
| | - Raisul Islam
- Department of Electrical Engineering, Stanford University, Stanford, CA 94305, USA
| | - Ricardo A. Iglesias
- Department of Electrical Engineering, Stanford University, Stanford, CA 94305, USA
| | - Krishna Saraswat
- Department of Electrical Engineering, Stanford University, Stanford, CA 94305, USA
- Department of Materials Science & Engineering, Stanford University, Stanford, CA 94305, USA
- Precourt Institute for Energy, Stanford University, Stanford, CA 94305, USA
| | - Eric Pop
- Department of Electrical Engineering, Stanford University, Stanford, CA 94305, USA
- Department of Materials Science & Engineering, Stanford University, Stanford, CA 94305, USA
- Precourt Institute for Energy, Stanford University, Stanford, CA 94305, USA
- Corresponding author.
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