Inverted valley polarization in optically excited transition metal dichalcogenides

Interlayer Coherent Dipole-Dipole Coupling Facilitates Charge Transfer in Multilayer Transition Metal Dichalcogenide Heterostructures

Inserting intermediate layers in transition metal dichalcogenide heterostructures (TMD HSs) has become an efficient approach to modulating interlayer charge transfer rates. However, it could not only modify the distance of charge transfer but also potentially alter the interlayer coupling strength within HSs, which would profoundly influence the charge transfer rate in the opposite direction. Here, to gain insight into the dual roles of inserted intermediate layers in multilayer TMD HSs, MoS2-nL WSe2-MoSe2 (n = 1-3) HSs were designed and systemically investigated. Different from the electron tunneling model following exponential behavior, we demonstrate that the coherent dipole-dipole coupling between 2L WSe2 and MoSe2 occurs, facilitating the averaged electron transfer rate (1/0.21 ps-1) from MoSe2 to MoS2. This is 3.7 times (an order of magnitude) faster than that of 1/0.77 ps-1 (1/2.08 ps-1) in the MoS2-1L WSe2-MoSe2 HS (MoS2-3L WSe2-MoSe2 HS), emphasizing its importance in multilayer TMD HS device design.

Ultrafast chirality-dependent dynamics from helicity-resolved transient absorption spectroscopy

Chirality, a pervasive phenomenon in nature, is widely studied across diverse fields including the origins of life, chemical catalysis, drug discovery, and physical optoelectronics. The investigations of natural chiral materials have been constrained by their intrinsically weak chiral effects. Recently, significant progress has been made in the fabrication and assembly of low-dimensional micro and nanoscale chiral materials and their architectures, leading to the discovery of novel optoelectronic phenomena such as circularly polarized light emission, spin and charge flip, advocating great potential for applications in quantum information, quantum computing, and biosensing. Despite these advancements, the fundamental mechanisms underlying the generation, propagation, and amplification of chirality in low-dimensional chiral materials and architectures remain largely unexplored. To tackle these challenges, we focus on employing ultrafast spectroscopy to investigate the dynamics of chirality evolution, with the aim of attaining a more profound understanding of the microscopic mechanisms governing chirality generation and amplification. This review thus provides a comprehensive overview of the chiral micro-/nano-materials, including two-dimensional transition metal dichalcogenides (TMDs), chiral halide perovskites, and chiral metasurfaces, with a particular emphasis on the physical mechanism. This review further explores the advancements made by ultrafast chiral spectroscopy research, thereby paving the way for innovative devices in chiral photonics and optoelectronics.

Efficient Near-Infrared to Blue Photon Upconversion by Ultrafast Spin Flip and Triplet Energy Transfer at Organic/2D Semiconductor Interface

Solid state photon upconversion by triplet-triplet annihilation (TTA), particularly near-infrared (NIR)-to-blue upconversion, holds instant promise for enhancing optoelectronic and photochemical applications. Despite extensive studies, NIR-to-blue upconversion has remained particularly challenging and elusive due to inherent multiple energy-downhill processes in TTA upconversion. In this study, using atomically thin two dimensional (2D) monolayer semiconductor as a triplet sensitizer, we demonstrate an efficient and robust solid-state NIR-to-blue photon upconversion system. The ultrathin and flexible organic/2D bilayer heterostructure exhibits a NIR-to-blue upconversion with high quantum yield (ΦUC=1.2 %, out of 50 %), low threshold power density (Ith=110 mW/cm2) and a record-high apparent anti-Stokes shift of 1.12 eV. Further spin- and time-resolved spectroscopy reveals an ultrafast (<500 fs) electron spin flip to triplet-like excitons in semiconductor sensitizer and subsequent picosecond (~6×1010 s-1) interfacial Dexter energy transfer to annihilator molecules. The triplet energy transfer rate and efficiency depend strongly on driving force, exhibiting Marcus normal region behavior. This work demonstrates 2D monolayer semiconductor as a superior ultrathin light harvesting and triplet sensitization layer and reveals the key knob to overcome the compromise between upconversion efficiency and energy loss, offering a viable pathway to efficient solid state NIR-to-blue photon upconversion and implementation.

Direct coupling of light to valley current

The coupling of circularly polarized light to local band structure extrema ("valleys") in two dimensional semiconductors promises a new electronics based on the valley degree of freedom. Such pulses, however, couple only to valley charge and not to the valley current, precluding lightwave manipulation of this second vital element of valleytronic devices. Contradicting this established wisdom, we show that the few cycle limit of circularly polarized light is imbued with an emergent vectorial character that allows direct coupling to the valley current. The underlying physical mechanism involves the emergence of a momentum space valley dipole, the orientation and magnitude of which allows complete control over the direction and magnitude of the valley current. We demonstrate this effect via minimal tight-binding models both for the visible spectrum gaps of the transition metal dichalcogenides (generation time  ~ 1 fs) as well as the infrared gaps of biased bilayer graphene ( ~ 14 fs); we further verify our findings with state-of-the-art time-dependent density functional theory incorporating transient excitonic effects. Our findings both mark a striking example of emergent physics in the ultrafast limit of light-matter coupling, as well as allowing the creation of valley currents on time scales that challenge quantum decoherence in matter.

Ultrafast Coherent Exciton Couplings and Many-Body Interactions in Monolayer WS2

Transition metal dichalcogenides (TMDs) are quantum confined systems with interesting optoelectronic properties, governed by Coulomb interactions in the monolayer (1L) limit, where strongly bound excitons provide a sensitive probe for many-body interactions. Here, we use two-dimensional electronic spectroscopy (2DES) to investigate many-body interactions and their dynamics in 1L-WS2 at room temperature and with sub-10 fs time resolution. Our data reveal coherent interactions between the strongly detuned A and B exciton states in 1L-WS2. Pronounced ultrafast oscillations of the transient optical response of the B exciton are the signature of a coherent 50 meV coupling and coherent population oscillations between the two exciton states. Supported by microscopic semiconductor Bloch equation simulations, these coherent dynamics are rationalized in terms of Dexter-like interactions. Our work sheds light on the role of coherent exciton couplings and many-body interactions in the ultrafast temporal evolution of spin and valley states in TMDs.

Correlation-driven nonequilibrium exciton site transition in a WSe2/WS2 moiré supercell

Moiré superlattices of transition metal dichalcogenides offer a unique platform to explore correlated exciton physics with optical spectroscopy. Whereas the spatially modulated potentials evoke that the exciton resonances are distinct depending on a site in a moiré supercell, there have been no clear demonstration how the moiré excitons trapped in different sites dynamically interact with the doped carriers; so far the exciton-electron dynamic interactions were presumed to be site-dependent. Thus, the transient emergence of nonequilibrium correlations are open questions, but existing studies are limited to steady-state optical measurements. Here we report experimental fingerprints of site-dependent exciton correlations under continuous-wave as well as ultrashort optical excitations. In near-zero angle-aligned WSe2/WS2 heterobilayers, we observe intriguing polarization switching and strongly enhanced Pauli blocking near the Mott insulating state, dictating the dominant correlation-driven effects. When the twist angle is near 60°, no such correlations are observed, suggesting the strong dependence of atomic registry in moiré supercell configuration. Our studies open the door to largely unexplored nonequilibrium correlations of excitons in moiré superlattices.

A new charge transfer pathway in the MoSe2-WSe2 heterostructure under the conditions of B-excitons being resonantly pumped

Most transition metal dichalcogenide (TMD) heterostructures (HSs) exhibit a type II band alignment, leading to a charge transfer process accompanied by the transfer of spin-valley polarization and spontaneous formation of interlayer excitons. This unique band structure facilitates achieving a longer exciton lifetime and extended spin-valley polarization lifetime. However, the mechanism of charge transfer in type II TMD HSs is not fully comprehended. Here, the ultrafast charge transfer process is studied in MoSe2-WSe2 HS via valley-solved broadband pump-probe spectroscopy. Under the conditions of B-excitons of WSe2 and MoSe2 being resonantly pumped, a new charge transfer pathway through the higher energy state associated with the B-exciton is found. Meanwhile, the holes (electrons) in the WSe2 (MoSe2) layer of MoSe2-WSe2 HS produce obvious spin-valley polarization even under the condition of B-exciton of WSe2 (MoSe2) being resonantly pumped, and the lifetime can reach tens of ps, which is in stark contrast to the absence of A-exciton spin-valley polarization in monolayer WSe2 (MoSe2) under the same pumping condition. The results deepen the insight into the charge transfer process in type II TMD HSs and show the great potential of TMD HSs in the application of spin-valley electronics devices.

Manipulating ultrafast magnetization dynamics of ferromagnets using the odd-even layer dependence of two-dimensional transition metal di-chalcogenides

Two-dimensional transition metal dichalcogenides (TMDs) have drawn immense interest due to their strong spin-orbit coupling and unique layer number dependence in response to spin-valley coupling. This leads to the possibility of controlling the spin degree of freedom of the ferromagnet (FM) in thin film heterostructures and may prove to be of interest for next-generation spin-based devices. Here, we experimentally demonstrate the odd-even layer dependence of WS2 nanolayers by measurements of the ultrafast magnetization dynamics in WS2/Co3FeB thin film heterostructures by using time-resolved Kerr magnetometry. The fluence (photon energy per unit area) dependent magnetic damping (α) reveals the existence of broken symmetry and the dominance of inter- and intraband scattering for odd and even layers of WS2, respectively. The higher demagnetization time, τm, in 3 and 5 layers of WS2 is indicative of the interaction between spin-orbit and spin-valley coupling due to the broken symmetry. The lower τm in even layers as compared to the bare FM layer suggests the presence of a spin transport. By correlating τm and α, we pinpointed the dominant mechanisms of ultrafast demagnetization. The mechanism changes from spin transport to spin-flip scattering for even layers of WS2 with increasing fluence. A fundamental understanding of the two-dimensional material and its odd-even layer dependence at ultrashort timescales provides valuable information for designing next-generation spin-based devices.

Light-Shaping of Valley States

The established paradigm to create valley states, excitations at local band extrema ("valleys"), is through selective occupation of specific valleys via circularly polarized laser pulses. Here we show a second way exists to create valley states, not by valley population imbalance but by "light-shaping" in momentum space, i.e. controlling the shape of the distribution of excited charge at each valley. While noncontrasting in valley charge, such valley states are instead characterized by a valley current, identically zero at one valley and finite and large at the other. We demonstrate that these (i) are robust to quantum decoherence, (ii) allow lossless toggling of the valley state with successive femtosecond laser pulses, and (iii) permit valley contrasting excitation both with and without a gap. Our findings open a route to robust ultrafast and switchable valleytronics in a wide scope of 2d materials, bringing closer the promise of valley-based electronics.

Excitonic Effect Drives Ultrafast Transition in Two-Dimensional Transition Metal Dichalcogenides

Two-dimensional (2D) transition metal dichalcogenides (TMDCs) are ideal platforms for exploring excitonic physics because of the tightly bound excitons. In this work, we observed the onset of band-edge exciton formation in monolayer MoS2 (WS2) and bilayer MoS2-WS2 by measuring the transient optical response upon excitation with ultrashort laser pulses. In addition to wavelength dependence on excitation under nonresonant excitation, we found that the onset of band-edge exciton formation in monolayer MoS2 (WS2) pumped in the exciton state is significantly faster than that with pumping in the nonexciton state, which could be attributed to the effective transition between exciton states induced by the excitonic effect. Besides, the onset of band-edge exciton formation in van der Waals heterostructures is similar to that for monolayer TMDCs regardless of charge transfer at the interface. Our work contributes to a better understanding of exciton dynamics in 2D TMDCs, providing a solid basis of the rational design of the 2D optoelectronic applications based on TMDCs.

THz induced giant spin and valley currents

Spin and valley indices represent the key quantum labels of quasi-particles in a wide class of two-dimensional materials and form the foundational elements of the fields of spintronics and valleytronics. Control over these degrees of freedom, therefore, remains the central challenge in these fields. Here, we show that femtosecond laser light combining optical frequency circularly polarized pulse and a terahertz (THz) frequency linearly polarized pulse, a so-called "hencomb" pulse, can generate precisely tailored and 90% pure spin currents for the dichalcogenide WSe₂ and >75% pure valley currents for bilayer graphene with gaps greater than 120 millielectron volts (dephasing time, 20 femtoseconds). The frequency of the circular light component and the polarization vector of the THz light component are shown to represent the key control parameters of these pulses. Our results thus open a route toward light control over spin/valley current states at ultrafast times.

Momentum-Resolved Exciton Coupling and Valley Polarization Dynamics in Monolayer WS_{2}

Using time- and angle-resolved photoemission, we present momentum- and energy-resolved measurements of exciton coupling in monolayer WS_{2}. We observe strong intravalley coupling between the B_{1s} exciton and A_{n>1} states. Our measurements indicate that the dominant valley depolarization mechanism conserves the exciton binding energy and momentum. While this conservation is consistent with Coulomb exchange-driven valley depolarization, we do not observe a momentum or energy dependence to the depolarization rate as would be expected for the exchange-based mechanism.

Enhanced excitonic features in an anisotropic ReS2/WSe2 heterostructure

Two-dimensional (2D) semiconductors have opened new horizons for future optoelectronic applications through efficient light-matter and many-body interactions at quantum level. Anisotropic 2D materials like rhenium disulphide (ReS₂) present a new class of materials with polarized excitonic resonances. Here, we demonstrate a WSe₂/ReS₂ heterostructure which exhibits a significant photoluminescence quenching at room temperature as well as at low temperatures. This indicates an efficient charge transfer due to the electron-hole exchange interaction. The band alignment of two materials suggests that electrons optically injected into WSe₂ are transferred to ReS₂. Polarization resolved luminescence measurements reveal two additional polarization-sensitive exciton peaks in ReS₂ in addition to the two conventional exciton resonances X₁ and X₂. Furthermore, for ReS₂ we observe two charged excitons (trions) with binding energies of 18 meV and 15 meV, respectively. The bi-excitons of WSe₂ become polarization sensitive and inherit polarizing properties from the underlying ReS₂ layers, which act as patterned substrates for top layer. Overall, our findings provide a better understanding of optical signatures in 2D anisotropic materials.

Spin-Valley Depolarization in van der Waals Heterostructures

The appearance of van der Waals heterostructures offers a new solution to valleytronics. Here, we observe the spin-valley depolarization process of electrons and holes in type-II MoS₂-WSe₂ heterostructures simultaneously for the first time by valley-resolved broad-band femtosecond pump-probe experiments. The different depolarization paths between electrons and holes make them have different spin-valley polarization lifetimes. The spin-valley depolarization pathway of holes is mainly dominated by a phonon-assisted intervalley scattering process, while intra- and intervalley coupling can trigger additional depolarization pathways for electrons. The hole polarization lifetime can be further prolonged to more than three times in trilayer heterostructure 2MoS₂-WSe₂. For MoS₂-WS₂ that has strong orbital hybridization of Mo and W atoms, both electrons and holes lose the spin-valley polarization extremely soon after charge separation, behaving similarly to intraexcitons in a monolayer. Our work advances the basic understanding of spin-valley depolarization of van der Waals heterostructures and facilitates the effort toward longer lifetime valleytronic devices for information transfer and storage applications.

Bright excitonic multiplexing mediated by dark exciton transition in two-dimensional TMDCs at room temperature

2D-semiconductors with strong light-matter interaction are attractive materials for integrated and tunable optical devices. Here, we demonstrate room-temperature wavelength multiplexing of the two-primary bright excitonic channels (A_b-, B_b-) in monolayer transition metal dichalcogenides (TMDs) arising from a dark exciton mediated transition. We present how tuning dark excitons via an out-of-plane electric field cedes the system equilibrium from one excitonic channel to the other, encoding the field polarization into wavelength information. In addition, we demonstrate how such exciton multiplexing is dictated by thermal-scattering by performing temperature dependent photoluminescence measurements. Finally, we demonstrate experimentally and theoretically how excitonic mixing can explain preferable decay through dark states in MoX₂ in comparison with WX₂ monolayers. Such field polarization-based manipulation of excitonic transitions can pave the way for novel photonic device architectures.

Ultrafast dynamics of spin relaxation in monolayer WSe2 and WSe2/graphene heterojunction

Excitonic devices based on two-dimensional (2D) transition metal dichalcogenides (TMDCs) can combine spintronics with valleytronics due to its special energy band structure. In this work, we studied the generation and...

Negative valley polarization in doped monolayer MoSe2

Monolayer molybdenum di-selenide (1L-MoSe₂) stands out in the transition metal dichalcogenide family of materials as an outlier where optical generation of valley polarization is inefficient. Here we show that using charge doping in conjunction with an external magnetic field, the valley polarization of 1L-MoSe₂ can be controlled effectively. Most remarkably, the valley polarization can be tuned to negative values, where the higher energy Zeeman mode emission is more intense than the lower energy one. Our experimental observations are interpreted with valley-selective exciton-charge dressing that manifests when gate induced doping populates predominantly one valley in the presence of Zeeman splitting.

Valley-exchange coupling probed by angle-resolved photoluminescence

The optical properties of monolayer transition metal dichalcogenides are dominated by tightly-bound excitons. They form at distinct valleys in reciprocal space, and can interact via the valley-exchange coupling, modifying their dispersion considerably. Here, we predict that angle-resolved photoluminescence can be used to probe the changes of the excitonic dispersion. The exchange-coupling leads to a unique angle dependence of the emission intensity for both circularly and linearly-polarised light. We show that these emission characteristics can be strongly tuned by an external magnetic field due to the valley-specific Zeeman-shift. We propose that angle-dependent photoluminescence measurements involving both circular and linear optical polarisation as well as magnetic fields should act as strong verification of the role of valley-exchange coupling on excitonic dispersion and its signatures in optical spectra.

Non-equilibrium diffusion of dark excitons in atomically thin semiconductors

Atomically thin semiconductors provide an excellent platform to study intriguing many-particle physics of tightly-bound excitons. In particular, the properties of tungsten-based transition metal dichalcogenides are determined by a complex manifold of bright and dark exciton states. While dark excitons are known to dominate the relaxation dynamics and low-temperature photoluminescence, their impact on the spatial propagation of excitons has remained elusive. In our joint theory-experiment study, we address this intriguing regime of dark state transport by resolving the spatio-temporal exciton dynamics in hBN-encapsulated WSe₂ monolayers after resonant excitation. We find clear evidence of an unconventional, time-dependent diffusion during the first tens of picoseconds, exhibiting strong deviation from the steady-state propagation. Dark exciton states are initially populated by phonon emission from the bright states, resulting in creation of hot (unequilibrated) excitons whose rapid expansion leads to a transient increase of the diffusion coefficient by more than one order of magnitude. These findings are relevant for both fundamental understanding of the spatio-temporal exciton dynamics in atomically thin materials as well as their technological application by enabling rapid diffusion.

Giant Photoluminescence Enhancement and Carrier Dynamics in MoS2 Bilayers with Anomalous Interlayer Coupling

Fundamental researches and explorations based on transition metal dichalcogenides (TMDCs) mainly focus on their monolayer counterparts, where optical densities are limited owing to the atomic monolayer thickness. Photoluminescence (PL) yield in bilayer TMDCs is much suppressed owing to indirect-bandgap properties. Here, optical properties are explored in artificially twisted bilayers of molybdenum disulfide (MoS₂). Anomalous interlayer coupling and resultant giant PL enhancement are firstly observed in MoS₂ bilayers, related to the suspension of the top layer material and independent of twisted angle. Moreover, carrier dynamics in MoS₂ bilayers with anomalous interlayer coupling are revealed with pump-probe measurements, and the secondary rising behavior in pump-probe signal of B-exciton resonance, originating from valley depolarization of A-exciton, is firstly reported and discussed in this work. These results lay the groundwork for future advancement and applications beyond TMDCs monolayers.

Ultrafast Insights into High Energy (C and D) Excitons in Few Layer WS2

High energy (C and D) excitons possess extraordinary influence over the optical properties of atomically thin transition metal dichalcogenides (TMDCs), and the comprehensive understanding of these would play a pivotal role in advancing research on 2D optoelectronics. Herein, we employed transient absorption spectroscopy to monitor the underlying photophysical processes involved with different excitonic features in few layer WS₂, modeled as a TMDC representative. We observed a strong intervalley coupling across the momentum space and proposed the most plausible relaxation pathway for different excitons in few layer scenario. C and D exciton dynamics were significantly slower as compared to canonical A and B excitons, as a consequence of the indirect Λ-Γ relaxation in C and D and direct K-K combination in A and B. Most importantly, all four excitons emerge in the system and influence each other irrespective of the incident photon energy, which would be extremely impactful in fabricating wide range photonic devices.

Sub-10 fs Intervalley Exciton Coupling in Monolayer MoS2 Revealed by Helicity-Resolved Two-Dimensional Electronic Spectroscopy

The valley pseudospin at the K and K' high-symmetry points in monolayer transition metal dichalcogenides (TMDs) has potential as an optically addressable degree of freedom in next-generation optoelectronics. However, intervalley scattering and relaxation of charge carriers leads to valley depolarization and limits practical applications. In addition, enhanced Coulomb interactions lead to pronounced excitonic effects that dominate the optical response and initial valley depolarization dynamics but complicate the interpretation of ultrafast spectroscopic experiments at short time delays. Employing broadband helicity-resolved two-dimensional electronic spectroscopy (2DES), we observe ultrafast (∼10 fs) intervalley coupling between all A and B valley exciton states that results in a complete breakdown of the valley index in large-area monolayer MoS₂ films. These couplings and subsequent dynamics exhibit minimal excitation fluence or temperature dependence and are robust toward changes in sample grain size and inherent strain. Our observations strongly suggest that this direct intervalley coupling on the time scale of optical excitation is an inherent property of large-area MoS₂ distinct from dynamic carrier or exciton scattering, phonon-driven processes, and multiexciton effects. This ultrafast intervalley coupling poses a fundamental challenge for exciton-based valleytronics in monolayer TMDs and must be overcome to fully realize large-area valleytronic devices.

Dissecting Interlayer Hole and Electron Transfer in Transition Metal Dichalcogenide Heterostructures via Two-Dimensional Electronic Spectroscopy

Monolayer transition metal dichalcogenides (ML-TMDs) are two-dimensional semiconductors that stack to form heterostructures (HSs) with tailored electronic and optical properties. TMD/TMD-HSs like WS2/MoS2 have type II band alignment and form long-lived (nanosecond) interlayer excitons following sub-100 fs interlayer charge transfer (ICT) from the photoexcited intralayer exciton. While many studies have demonstrated the ultrafast nature of ICT processes, we still lack a clear physical understanding of ICT due to the trade-off between temporal and frequency resolution in conventional transient absorption spectroscopy. Here, we perform two-dimensional electronic spectroscopy (2DES), a method with both high frequency and temporal resolution, on a large-area WS2/MoS2 HS where we unambiguously time resolve both interlayer hole and electron transfer with 34 ± 14 and 69 ± 9 fs time constants, respectively. We simultaneously resolve additional optoelectronic processes including band gap renormalization and intralayer exciton coupling. This study demonstrates the advantages of 2DES in comprehensively resolving ultrafast processes in TMD-HS, including ICT.

Nonequilibrium Lattice Dynamics in Monolayer MoS2

The coupled nonequilibrium dynamics of electrons and phonons in monolayer MoS₂ is investigated by combining first-principles calculations of the electron-phonon and phonon-phonon interactions with the time-dependent Boltzmann equation. Strict phase-space constraints in the electron-phonon scattering are found to influence profoundly the decay path of excited electrons and holes, restricting the emission of phonons to crystal momenta close to a few high-symmetry points in the Brillouin zone. As a result of momentum selectivity in the phonon emission, the nonequilibrium lattice dynamics is characterized by the emergence of a highly anisotropic population of phonons in reciprocal space, which persists for up to 10 ps until thermal equilibrium is restored by phonon-phonon scattering. Achieving control of the nonequilibrium dynamics of the lattice may provide unexplored opportunities to selectively enhance the phonon population of two-dimensional crystals and, thereby, transiently tailor electron-phonon interactions over subpicosecond time scales.

Gate-controlled spin-valley-layer locking in bilayer transition-metal dichalcogenides

The interplay between various internal degrees of freedom of electrons is of fundamental importance for designing high performance electronic devices. A particular instance of this interplay can be observed in bilayer TMDs due to the combined effect of spin-orbit and interlayer couplings. We study the transport of spin, valley and layer pseudospin, generally, through a magnetoelectric barrier in AB-stacked bilayer TMDs and demonstrate an electrically controllable platform for multifunctional and ultra-high-speed logic devices. Perfect spin and valley polarizations as well as good layer localization of electrons occur in a rather large range of Fermi energies for moderate electric and magnetic fields. Any number of these polarizations can be inverted by adjusting the two potential gates on the two layers. Furthermore, the conditions for the excellent polarizations are determined for the spin, valley and layer degrees of freedom, in terms of the adjustable system parameters. We discuss the individual electric and magnetic barriers and show that the single electric barrier acts as a bipolar pseudospin semiconductor with opposite polarizations for the conduction and valence bands. The results of this study pave the way for multifunctional pseudospintronic applications based on 2D materials.

Vacancies on 2D transition metal dichalcogenides elicit ferroptotic cell death

Sustainable developments of nanotechnology necessitate the exploration of structure-activity relationships (SARs) at nano-bio interfaces. While ferroptosis may contribute in the developments of some severe diseases (e.g., Parkinson's disease, stroke and tumors), the cellular pathways and nano-SARs are rarely explored in diseases elicited by nano-sized ferroptosis inducers. Here we find that WS2 and MoS2 nanosheets induce an iron-dependent cell death, ferroptosis in epithelial (BEAS-2B) and macrophage (THP-1) cells, evidenced by the suppression of glutathione peroxidase 4 (GPX4), oxygen radical generation and lipid peroxidation. Notably, nano-SAR analysis of 20 transition metal dichalcogenides (TMDs) disclosures the decisive role of surface vacancy in ferroptosis. We therefore develop methanol and sulfide passivation as safe design approaches for TMD nanosheets. These findings are validated in animal lungs by oropharyngeal aspiration of TMD nanosheets. Overall, our study highlights the key cellular events as well as nano-SARs in TMD-induced ferroptosis, which may facilitate the safe design of nanoproducts.

Evidence for the Dominance of Carrier-Induced Band Gap Renormalization over Biexciton Formation in Cryogenic Ultrafast Experiments on MoS2 Monolayers

Transition-metal dichalcogenides (TMDs) such as MoS₂ display promising electrical and optical properties in the monolayer limit. Due to strong quantum confinement, TMDs provide an ideal environment for exploring excitonic physics using ultrafast spectroscopy. However, the interplay between collective excitation effects on single excitons such as band gap renormalization/exciton binding energy (BGR/EBE) change and multiexciton effects such biexciton formation remains poorly understood. Using two-dimensional electronic spectroscopy, we observe the dominance of single-exciton BGR/EBE signals over optically induced biexciton formation. We make this determination based on a lack of strong PIA features at T = 0 fs in the cryogenic spectra. By means of nodal line slope analysis, we determine that spectral diffusion occurs faster than BGR/EBE change, indicative of distinct processes. These results indicate that at higher sub-Mott limit fluences, collective effects on single excitons dominate biexciton formation.

80% Valley Polarization of Free Carriers in Singly Oriented Single-Layer WS_{2} on Au(111)

We employ time- and angle-resolved photoemission spectroscopy to study the spin- and valley-selective photoexcitation and dynamics of free carriers at the K[over ¯] and K[over ¯]^{'} points in singly oriented single-layer WS_{2}/Au(111). Our results reveal that in the valence band maximum an ultimate valley polarization of free holes of 84% can be achieved upon excitation with circularly polarized light at room temperature. Notably, we observe a significantly smaller valley polarization for the photoexcited free electrons in the conduction band minimum. Clear differences in the carrier dynamics between electrons and holes imply intervalley scattering processes into dark states being responsible for the efficient depolarization of the excited electron population.

Ultrafast Dynamics of Spin Generation and Relaxation in Layered WSe2

We investigated the build-up and relaxation processes of spin-polarized A- and B-exciton dynamics in monolayer, bilayer, and bulk WSe₂ using helicity-resolved two-color pump-probe spectroscopy. Substantial spin polarization was confirmed in bulk crystals, though the spin polarization degree of A excitons decreased from monolayer to bulk. However, the spin polarization of A excitons almost vanished in all different layered-flakes when resonantly pumping the B-exciton transition, owing to the dominant role of interexciton transfer. When resonantly pumping the A-exciton transition, the spin polarization of the up-converted B excitons was inverted in all layers because of the efficient Dexter-like coupling and phonon-assisted scattering. The same short spin relaxation time (1.8 ± 0.2 ps) of A excitons was found for all studied flakes in the subsequent spin depolarization processes, which was ascribed to the active electron-phonon scattering resulting from the intrinsic small conduction-band spin-orbit coupling splitting in layered WSe₂.

Multiple harmonics control of edge pseudomagnetoplasmons in strained grapheme

Valley-resolved edge plasmons are relevant to nano-optics at subwavelength scales. However, less attention has been paid to their tunable properties in time domain. In this work we investigate edge pseudomagnetoplasmons in a strained graphene modulated by multiple harmonics with frequency in the THz regime. The edge plasmon is described by a set of nonlinear hydrodynamic equations, which are self-consistently solved by the flux-corrected transport method. Without the applied voltage, there exist two unidirectional-propagating edge-plasmon modes with weak valley polarization P. It is demonstrated that by varying the amplitude of multiple harmonics one can alter both the amplitude and the polarity of the valley polarization in the edge plasmon. One can achieve a full valley polarization P=1 at the instant of half cycle of the multiple harmonics and P=-1 at the instant of one cycle. The edge-plasmon density and the transverse velocity vanish for the frozen valley.

Intravalley Spin-Flip Relaxation Dynamics in Single-Layer WS2

In monolayer (1L) transition metal dichalcogenides (TMDs) the valence and conduction bands are spin-split because of the strong spin-orbit interaction. In tungsten-based TMDs the spin-ordering of the conduction band is such that the so-called dark excitons, consisting of electrons and holes with opposite spin orientation, have lower energy than A excitons. The transition from bright to dark excitons involves the scattering of electrons from the upper to the lower conduction band at the K point of the Brillouin zone, with detrimental effects for the optoelectronic response of 1L-TMDs, since this reduces their light emission efficiency. Here, we exploit the valley selective optical selection rules and use two-color helicity-resolved pump-probe spectroscopy to directly measure the intravalley spin-flip relaxation dynamics in 1L-WS₂. This occurs on a sub-ps time scale, and it is significantly dependent on temperature, indicative of phonon-assisted relaxation. Time-dependent ab initio calculations show that intravalley spin-flip scattering occurs on significantly longer time scales only at the K point, while the occupation of states away from the minimum of the conduction band significantly reduces the scattering time. Our results shed light on the scattering processes determining the light emission efficiency in optoelectronic and photonic devices based on 1L-TMDs.