Engineering Auger recombination in colloidal quantum dots via dielectric screening

Quantum dots encoded superparamagnetic micron-particles based on layer-by-layer assembly for multiplexed nucleic acid detection

With the rapid development of precise medicine, microbeads-based fluorescence bio-coding technology for multiplexed detection has attracted increasing attentions. However, traditional multiplexed bio-analysis could not meet the demand for multiplexed detection due to the limitations of labeling dyes and microscope channels. Here, a novel fluorescence encoding strategy was proposed by using multi-color quantum dots (QDs) acted as fluorescence tags and micron sized superparamagnetic particle acted as encoding carrier. By adjusting the color and number of labeled QDs, fluorescence encoded superparamagnetic particles (FESPs) with distinct fluorescence colors and intensities were constructed. The FESPs were prepared by metal coordination-based layer-by-layer assembly with excellent binding effect. By binding DNA capture oligonucleotides, FESP probes were constructed for multiplexed detection of miRNA-21, miRNA-122 and miRNA-130b with excellent specificity. Moreover, the miRNA targets could be easily separated within 5 s originated from the excellent superparamagnetism, enabling great simplified bio-analysis process. The results demonstrated here will provide opportunities to realize the full potentials of fluorescence bio-coding in biomedical detection and diagnosis.

Tunable Near-Infrared Emission from CdSe/CdTe/CdSe Core/Shell/Shell Quantum Dots

Core/shell nanostructures of type I and type II band-offset materials have been pivotal in improving photoluminescence and imparting charge separation in well-established colloidal quantum dots. In addition to these features, the multishell motif provides a simple means to expand the emission spectral range and spatially fine-tune electron and hole wave functions. Here, we explore the CdSe/CdTe/CdSe core/shell/shell structure with a total diameter of ≲7 nm, within the practical limits of readily accessible synthesis capabilities. Systematic variations of the dimensions of the core and the shells are carried out to examine how each of these structural parameters affects optical properties. Emission in the red to near-infrared range from 677 to 1057 nm (1.83 to 1.17 eV), photoluminescence quantum yields of up to 88%, and line widths as narrow as 109 meV (41.8 nm for the peak position of 677 nm) are achieved. Even with a total size limit of ∼7 nm with an ∼1 nm thick CdTe shell, the reddest emission energy can approach the expected energy separation between the bulk CdSe conduction band edge and CdTe valence band edge to within tens of millielectronvolts. Comparison to simple effective mass approximation provides insights and guidelines on achieving independent control over the effective band gap and the electron-hole overlap.

Correlated Dirac Fermions in Twisted Bilayers of MoS2

Artificial honeycomb lattices are essential for understanding exotic quantum phenomena arising from the interplay between Dirac physics and electron correlation. This work shows that the top two moiré valence bands in rhombohedral-stacked twisted MoS2 bilayers (tb-MoS2) form a honeycomb lattice with massless Dirac fermions. The hopping and Coulomb interaction parameters are explicitly determined based on large-scale ab initio calculations. The system exhibits significant nonlocal Coulomb repulsion and can be described by the extended Hubbard model. At half-filling, strong Coulomb repulsion in free-standing tb-MoS2 drives the system away from the semimetal phase, resulting in strongly correlated Dirac fermions. By varying the twist angle and dielectric environment, the Hamiltonian parameters can be tuned in a wide range, enabling transitions between distinct quantum phases. The high tunability makes tb-MoS2 a promising simulator for exploring many-body effects of Dirac fermions.

Direct Evidence of Excessive Charge-Carrier-Induced Degradation in InP Quantum-Dot Light-Emitting Diodes

The limited operational lifetime of quantum-dot light-emitting diodes (QLEDs) poses a critical obstacle that must be addressed before their practical application. Specifically, cadmium-free InP-based QLEDs, which are environmentally benign, experience significant operational degradation due to challenges in charge-carrier confinement stemming from the composition of InP quantum dots (QDs). This study investigates the operational degradation of InP QLEDs and provides direct evidence of the degradation process. To facilitate degradation studies, a double-emission structure was designed. We employed transient electroluminescence and photoluminescence for nondestructive analysis of charge-carrier dynamics during device degradation. The time-resolved emission sequence revealed changes in carrier mobility within the QD layer as devices degraded. Furthermore, prolonged exposure of QDs to the charge-carrier population hindered their radiative recombination. Our observations indicate clear evidence of QLED degradation, characterized by ligand detachment from the QD surface and deterioration of the hole-transporting material due to excessive electrons. This comprehensive analysis of degradation mechanisms in InP QLEDs lays the groundwork for improving operational stability and longevity, serving as a benchmark for future research and development in the field of nanocrystal-based electroluminescent devices.

Diagnosing the Charge Dynamic Behaviors in Quantum-Dot Light-Emitting Diodes by Temperature-Dependent Measurements

Distinguishing and understanding the nonradiative recombination of charges are crucial for optimizing quantum-dot light-emitting diodes (QLEDs). Auger recombination (AR), a well-known nonradiative process, is widely recognized to occur in QLEDs. However, it has not yet been directly observed in a real working QLED. Here, the AR effect is verified in the QLED at temperatures of <150 K. At low temperatures, the QLED exhibits a unique S-shaped external quantum efficiency (EQE) evolution as the driving current density increases. Experimental and modeling results indicate that this S-shaped EQE results from the asynchronous changes in the behavior of injection of electrons and holes into the quantum-dot emission layer. At low driving voltages, both electron and hole currents are limited by the Fowler-Nordheim (F-N) tunneling behavior. The relatively low barrier for electrons leads to overwhelming electron injection and seriously imbalanced charges in the quantum dots, triggering the AR process. As the voltage increases, the electron current within the emission layer is no longer governed by F-N tunneling but limited by space charges. Then, charge injection becomes balanced, and the EQE increases. These results offer valuable insights into the charge injection and recombination processes within QLEDs, as well as implications for device design.

Color-conversion displays: current status and future outlook

The growing focus on enhancing color quality in liquid crystal displays (LCDs) and organic light-emitting diodes (OLEDs) has spurred significant advancements in color-conversion materials. Furthermore, color conversion is also important for the development and commercialization of Micro-LEDs. This article provides a comprehensive review of different types of color conversion methods as well as different types of color conversion materials. We summarize the current status of patterning process, and discuss key strategies to enhance display performance. Finally, we speculate on the future prospects and roles that color conversion will play in ultra-high-definition micro- and projection displays.

Weakly Confined Semiconductor Nanocrystals Excel in Photochemical and Optoelectronic Properties: Evidence from Single-Dot Studies

Single-molecule spectroscopy offers state-resolved measurements on charge-transfer reactions of single semiconductor nanocrystals, leading to the discovery of up to six single-charge transfer reactions with seven transient states for single CdSe/CdS core/shell nanocrystals with water (or oxygen) as the hole (or electron) acceptors. Kinetic rates of three photoinduced single-hole transfer reactions decrease significantly upon increasing the number of excess electrons in a nanocrystal, mainly due to efficient Auger nonradiative recombination of the charged single excitons. Conversely, the kinetic rates of three single-electron transfer reactions of an unexcited nanocrystal increase proportionally to the number of excess electrons in it. Results here reveal that charge-transfer reactions of nanocrystals, at the center of nearly all their functions, could only be deciphered at a state-resolved level on a single nanocrystal. Size-dependent studies validate the weakly confined semiconductor nanocrystals, instead of strongly confined ones (quantum dots), as optimal candidates for photochemical and optoelectronic applications.

Facet Dependent Photoluminescence Blinking from Perovskite Nanocrystals

Photoluminescence (PL) blinking of nanoparticles, while detrimental to their imaging applications, may benefit next-generation displays if the blinking is precisely controlled by reversible electron/hole injections from an external source. Considerable efforts are made to create well-characterized charged excitons within nanoparticles through electrochemical charging, which has led to enhanced control over PL-blinking in numerous instances. Manipulating the photocharging/discharging rates in nanoparticles by surface engineering can represent a straightforward method for regulating their blinking behaviors, an area largely unexplored for perovskite nanocrystals (PNCs). This work shows facet engineering leading to different morphologies of PNCs characterized by distinct blinking patterns. For instance, examining the PL intensity trajectories of single PNCs, representing the instantaneous photon count rate over time, reveals that the OFF-state population significantly increases as the number of facets increases from six to twenty-six. This study suggests that extra-faceted PNCs, owing to their polar facets and expanded surface area, render them more susceptible to photocharging, which results in larger OFF-state populations. Furthermore, the fluorescence correlation spectroscopy (FCS) study unveils that the augmented propensity for photocharging in extra-faceted PNCs can also originate from their greater tendency to form complexes with neighboring molecules.

A closer look at the effects of oxygen on the photoluminescence properties of CdSe/CdS quantum dots

We present a detailed study on the effects of oxygen on the photoluminescence properties of CdSe/CdS quantum dots (QDs). We investigated the role of oxygen by performing confocal measurements on thin films as well as on single particles while rapidly exchanging the gaseous environment between oxygen and an inert gas atmosphere. We found that the deionization of negatively charged particles by oxygen depends on both the excitation power and the shell thickness of the QDs. For QDs with thin shells, which exhibit strong photoluminescence blinking, we observed that the presence of oxygen affects both band-edge carrier blinking and hot-carrier blinking.

Tailoring Auger Recombination Dynamics in CsPbI3 Perovskite Nanocrystals via Transition Metal Doping

Auger recombination is a pivotal process for semiconductor nanocrystals (NCs), significantly affecting charge carrier generation and collection in optoelectronic devices. This process depends mainly on the NCs' electronic structures. In our study, we investigated Auger recombination dynamics in manganese (Mn2+)-doped CsPbI3 NCs using transient absorption (TA) spectroscopy combined with theoretical and experimental structural characterization. Our results show that Mn2+ doping accelerates Auger recombination, reducing the biexciton lifetime from 146 to 74 ps with increasing Mn doping concentration up to 10%. This accelerated Auger recombination in Mn-doped NCs is attributed to increased band edge wave function overlap of excitons and a larger density of final states of Auger recombination due to Mn orbital involvement. Moreover, Mn doping reduces the dielectric screening of the excitons, which also contributes to the accelerated Auger recombination. Our study demonstrates the potential of element doping to regulate Auger recombination rates by modifying the materials' electronic structure.

Ultrasensitive Fluorescence Detection of Ascorbic Acid Using Silver Ion-Modulated High-Quality CdSe/CdS/ZnS Quantum Dots

Improving the sensitivity of the fluorescence method for the detection of bioactive molecules is crucial in biochemical analysis. In this work, an ultrasensitive sensing strategy was constructed for the detection of ascorbic acid (AA) using high-quality 3-mercaptopropionic acid-capped CdSe/CdS/ZnS quantum dots (MPA-CdSe/CdS/ZnS QDs) as the fluorescent probe. The prepared water-soluble QDs exhibited a high photoluminescence quantum yield (PL QY) of up to 96%. Further, the fluorescence intensity of the QDs was intensively quenched through the dynamic quenching of Ag+ ions due to an efficient photoinduced electron transfer progress. While the existence of AA before adding Ag+ ions, Ag+ ions were reduced. Thus, the interaction of the QDs and Ag+ ions was destroyed, which led to the fluorescence distinct recovery. The detection limit of AA could be as low as 0.2 nM using this sensing system. Additionally, most relevant small molecules and physiological ions had no influence on the analysis of AA. Satisfactory results were obtained in orange beverages, showing its great potential as a meaningful platform for highly sensitive and selective AA sensing for clinical analysis.

Conversion of Photoluminescence Blinking Types in Single Colloidal Quantum Dots

Almost all colloidal quantum dots (QDs) exhibit undesired photoluminescence (PL) blinking, which poses a significant obstacle to their use in numerous luminescence applications. An in-depth study of the blinking behavior, along with the associated mechanisms, can provide critical opportunities for fabricating high-quality QDs for diverse applications. Here the blinking of a large series of colloidal QDs is investigated with different surface ligands, particle sizes, shell thicknesses, and compositions. It is found that the blinking behavior of single alloyed CdSe/ZnS QDs with a shell thickness of up to 2 nm undergoes an irreversible conversion from Auger-blinking to band-edge carrier blinking (BC-blinking). Contrastingly, single perovskite QDs with particle sizes smaller than their Bohr diameters exhibit reversible conversion between BC-blinking and more pronounced Auger-blinking. Changes in the effective trapping sites under different excitation conditions are found to be responsible for the blinking type conversions. Additionally, changes in shell thickness and particle size of QDs have a significant effect on the blinking type conversions due to altered wavefunction overlap between excitons and effective trapping sites. This study elucidates the discrepancies in the blinking behavior of various QD samples observed in previous reports and provides deeper understanding of the mechanisms underlying diverse types of blinking.

Surface Passivation toward Multiple Inherent Dangling Bonds in Indium Phosphide Quantum Dots

Indium phosphide (InP) quantum dots (QDs) have become the most recognized prospect to be less-toxic surrogates for Cd-based optoelectronic systems. Due to the particularly dangling bonds (DBs) and the undesirable oxides, the photoluminescence performance and stability of InP QDs remain to be improved. Previous investigations largely focus on eliminating P-DBs and resultant surface oxidation states; however, little attention has been paid to the adverse effects of the surface In-DBs on InP QDs. This work demonstrates a facile one-step surface peeling and passivation treatment method for both In- and P-DBs for InP QDs. Meanwhile, the surface treatment may also effectively support the encapsulation of the ZnSe shell. Finally, the generated InP/ZnSe QDs display a narrower full width at half-maximum (fwhm) of ∼48 nm, higher photoluminescence quantum yields (PLQYs) of ∼70%, and superior stability. This work enlarges the surface chemistry engineering consideration of InP QDs and considerably promotes the development of efficient and stable optoelectronic devices.

Colloidal Multi-Dot Nanorods

Colloidal nanorod heterostructures consisting of multiple quantum dots within a nanorod (n-DNRs, where n is the number of quantum dots within a nanorod) are synthesized with alternating segments of CdSe "dot" and CdS "rod" via solution heteroepitaxy. The reaction temperature, time dependent ripening, and asymmetry of the wurtzite lattice and the resulting anisotropy of surface ligand steric hindrance are exploited to vary the morphology of the growing quantum dot segments. The alternating CdSe and CdS growth steps can be easily repeated to increment the dot number in unidirectional or bidirectional growth regimes. As an initial exploration of electron occupation effects on their optical properties, asymmetric 2-DNRs consisting of two dots of different lengths and diameters are synthesized and are shown to exhibit a change in color and an unusual photoluminescence quantum yield increase upon photochemical doping.

Enhancement of Optical Gain in Colloidal CdSe/CdS/ZnS Quantum Dots through Nanosecond Optical Pumping

Optical gain and lasing in colloidal nanocrystals are often hindered by sub-nanosecond rapid Auger non-radiative recombination, especially under continuous wave optical or electrical excitation. This study demonstrates amplified spontaneous emission (ASE) from CdSe/CdS/ZnS quantum dot (QD) solids through prolonged pulsed optical pumping over 10 ns. The incorporation of CdS and ZnS double shells on CdSe QDs effectively decelerates the Auger process in multiexcitonic states by extending the electron wave function and enhancing dielectric screening. Furthermore, we engineer smooth, densely packed QD solid films that efficiently guide the optical mode, achieving substantial net gain values under nanosecond pumping. The proposed approach helps observe ASE with gain thresholds of 0.84 and 1.5 mJ/cm2 under optical pumping pulse widths of 6 and 15 ns, respectively. This advancement can promote continuous pumping in colloidal QD gain systems, opening new avenues for optoelectronic applications.

Color Revolution: Prospects and Challenges of Quantum-Dot Light-Emitting Diode Display Technologies

Light-emitting diodes (LEDs) based on colloidal quantum-dots (QDs) such as CdSe, InP, and ZnSeTe feature a unique advantage of narrow emission linewidth of ≈20 nm, which can produce highly accurate colors, making them a highly promising technology for the realization of displays with Rec. 2020 color gamut. With the rapid development in the past decades, the performances of red and green QLEDs have been remarkably improved, and their efficiency and lifetime can almost meet industrial requirements. However, the industrialization of QLED displays still faces many challenges; for example, (1) the device mechanisms including the charge injection/transport/leakage, exciton quenching, and device degradation are still unclear, which fundamentally limit QLED performance improvement; (2) the blue performances including the efficiency, chromaticity, and stability are relatively low, which are still far from the requirements of practical applications; (3) the color patterning processes including the ink-jet printing, transfer printing, and photolithography are still immature, which restrict the manufacturing of high resolution full-color QLED displays. Here, the recent advancements attempting to address the above challenges of QLED displays are specifically reviewed. After a brief overview of QLED development history, device structure/principle, and performances, the main focus is to investigate the recent discoveries on device mechanisms with an emphasis on device degradation. Then recent progress is introduced in blue QLEDs and color patterning. Finally, the opportunities, challenges, solutions, and future research directions of QLED displays are summarized.

Electron-Induced Degradation in Blue Quantum-Dot Light-Emitting Diodes

The poor stability of blue quantum-dot (QD) light-emitting diodes (B-QLEDs) hinders their application in displays. To improve the stability of B-QLEDs, the degradation mechanism should be revealed. Here, the degradation mechanism of B-QLEDs is investigated by monitoring the changes occurring in the QDs and the hole transport layers (HTL) during device operation, respectively. It is revealed that the accumulation of electrons within the QDs is responsible for the degradation of the devices. On the one hand, the accumulated electrons induce the detachment of oleic acid ligands, leading to permanent damage to the stability of B-QDs. On the other hand, the accumulated electrons leak into the HTL or recombine at the HTL/QDs interface, leading to the degradation of HTL. The formation of surface defects in B-QDs and the decomposition of HTL contribute to the degradation of B-QLEDs. The results reveal the strong dependence of B-QLEDs stability on the accumulated electrons, the QDs and the HTL, which can help researchers to develop effective design strategies for improving the lifespan of B-QLEDs.

Differences in Electron and Hole Injection and Auger Recombination between Red, Green, and Blue CdSe-Based Quantum Dot Light Emitting Devices

Despite the significant progress that has been made in recent years in improving the performance of quantum dot light-emitting devices (QLEDs), the effect of charge imbalance and excess carriers on excitons in red (R) vs green (G) vs blue (B) QLEDs has not been compared or systematically studied. In this work we study the effect of changing the electron (e)/hole (h) supply ratio in the QDs emissive layer (EML) in CdSe-based R-, G-, and B-QLEDs with inverted structure in order to identify the type of excess carriers and investigate their effect on the electroluminescence performance of QLEDs of each color. Results show that in R-QLEDs, the e/h ratio in the EML is >1, whereas in G- and B-QLEDs, the e/h ratio is <1 with charge balance conditions being significantly worse in the case of B-QLEDs. Transient photoluminescence (PL) and steady state PL measurements show that, compared to electrons, holes lead to a stronger Auger quenching effect. Transient electroluminescence (TrEL) results indicate that Auger quenching leads to a gradual decline in the EL performance of the QLEDs after a few microseconds, with a stronger effect observed for positive charging versus negative charging. The results provide insights into the differences in the efficiency behavior of R-, G-, and B-QLEDs and uncover the role of excess holes and poor charge balance in the lower efficiency and EL stability of B-QLEDs.

Long-Lived and Bright Biexcitons in Quantum Dots with Parabolic Band Potentials

Multiple exciton physics in semiconductor nanocrystals play an important role in optoelectronic devices. This work investigates radially alloyed CdZnSe/CdS nanocrystals with suppressed Auger recombination due to the spatial separation of carriers, which also underpins their performance in optical gain and scintillation experiments. Due to suppressed Auger recombination, the biexciton lifetime is greater than 10 ns, much longer than most nanocrystals. The samples show optical gain, amplified spontaneous emission, and lasing at thresholds <2 excitons per particle. They also show broad gain bandwidth (>500 meV) encompassing 4 amplified spontaneous emission bands. Similarly enabled by slowed multiple exciton relaxation, the samples display strong performance in scintillating films under X-ray illumination. The CdZnSe/CdS samples have fast radioluminescence rise (<80 ps) and decay times (<5 ns), light yields up to 6700 photons·MeV-1, and the demonstrated capacity for incorporation into large area films for scintillation imaging.

Anomalous efficiency elevation of quantum-dot light-emitting diodes induced by operational degradation

Quantum-dot light-emitting diodes promise a new generation of high-performance and solution-processed electroluminescent light sources. Understanding the operational degradation mechanisms of quantum-dot light-emitting diodes is crucial for their practical applications. Here, we show that quantum-dot light-emitting diodes may exhibit an anomalous degradation pattern characterized by a continuous increase in electroluminescent efficiency upon electrical stressing, which deviates from the typical decrease in electroluminescent efficiency observed in other light-emitting diodes. Various in-situ/operando characterizations were performed to investigate the evolutions of charge dynamics during the efficiency elevation, and the alterations in electric potential landscapes in the active devices. Furthermore, we carried out selective peel-off-and-rebuild experiments and depth-profiling analyses to pinpoint the critical degradation site and reveal the underlying microscopic mechanism. The results indicate that the operation-induced efficiency increase results from the degradation of electron-injection capability at the electron-transport layer/cathode interface, which in turn leads to gradually improved charge balance. Our work provides new insights into the degradation of red quantum-dot light-emitting diodes and has far-reaching implications for the design of charge-injection interfaces in solution-processed light-emitting diodes.

Optimizing ZnO-Quantum Dot Interface with Thiol as Ligand Modification for High-Performance Quantum Dot Light-Emitting Diodes

As the electron transport layer in quantum dot light-emitting diodes (QLEDs), ZnO suffers from excessive electrons that lead to luminescence quenching of the quantum dots (QDs) and charge-imbalance in QLEDs. Therefore, the interplay between ZnO and QDs requires an in-depth understanding. In this study, DFT and COSMOSL simulations are employed to investigate the effect of sulfur atoms on ZnO. Based on the simulations, thiol ligands (specifically 2-hydroxy-1-ethanethiol) to modify the ZnO nanocrystals are adopted. This modification alleviates the excess electrons without causing any additional issues in the charge injection in QLEDs. This modification strategy proves to be effective in improving the performance of red-emitting QLEDs, achieving an external quantum efficiency of over 23% and a remarkably long lifetime T95 of >12 000 h at 1000 cd m-2 . Importantly, the relationship between ZnO layers with different electronic properties and their effect on the adjacent QDs through a single QD measurement is investigated. These findings show that the ZnO surface defects and electronic properties can significantly impact the device performance, highlighting the importance of optimizing the ZnO-QD interface, and showcasing a promising ligand strategy for the development of highly efficient QLEDs.

Band-Edge Energy Levels of Dynamic Excitons in Cube-Shaped CdSe/CdS Core/Shell Nanocrystals

An electron-hole pair in a cube-shaped CdSe/CdS core/shell nanocrystal exists in the form of dynamic excitons across the strongly and weakly confined regimes under ambient temperatures. Photochemical doping is applied to distinguish the band-edge electron and hole levels, confirming an effective mass model with universal constants. Reduction of the optical bandgap upon epitaxy of the CdS shells is caused by lowering the band-edge electron level and barely affecting the band-edge hole level. Similar shifts of the electron levels, yet retaining the hole levels, can switch the order in energy of the three lowest-energy transitions. Thermal distribution of 1-4 electrons among the two thermally accessible electron levels follows number-counting statistics, instead of Fermi-Dirac distribution.

Electric-field-induced colour switching in colloidal quantum dot molecules at room temperature

Colloidal semiconductor quantum dots are robust emitters implemented in numerous prototype and commercial optoelectronic devices. However, active fluorescence colour tuning, achieved so far by electric-field-induced Stark effect, has been limited to a small spectral range, and accompanied by intensity reduction due to the electron-hole charge separation effect. Utilizing quantum dot molecules that manifest two coupled emission centres, we present a unique electric-field-induced instantaneous colour-switching effect. Reversible emission colour switching without intensity loss is achieved on a single-particle level, as corroborated by correlated electron microscopy imaging. Simulations establish that this is due to the electron wavefunction toggling between the two centres, induced by the electric field, and affected by the coupling strength. Quantum dot molecules manifesting two coupled emission centres may be tailored to emit distinct colours, opening the path for sensitive field sensing and colour-switchable devices such as a novel pixel design for displays or an electric-field-induced colour-tunable single-photon source.

Guilty as Charged: The Role of Undercoordinated Indium in Electron-Charged Indium Phosphide Quantum Dots

Quantum dots (QDs) are known for their size-dependent optical properties, narrow emission bands, and high photoluminescence quantum yield (PLQY), which make them interesting candidates for optoelectronic applications. In particular, InP QDs are receiving a lot of attention since they are less toxic than other QD materials and are hence suitable for consumer applications. Most of these applications, such as LEDs, photovoltaics, and lasing, involve charging QDs with electrons and/or holes. However, charging of QDs is not easy nor innocent, and the effect of charging on the composition and properties of InP QDs is not yet well understood. This work provides theoretical insight into electron charging of the InP core and InP/ZnSe QDs. Density functional theory calculations are used to show that charging of InP-based QDs with electrons leads to the formation of trap states if the QD contains In atoms that are undercoordinated and thus have less than four bonds to neighboring atoms. InP core-only QDs have such atoms at the surface, which are responsible for the formation of trap states upon charging with electrons. We show that InP/ZnSe core-shell models with all In atoms fully coordinated can be charged with electrons without the formation of trap states. These results show that undercoordinated In atoms should be avoided at all times for QDs to be stably charged with electrons.

Auger Recombination and Carrier-Lattice Thermalization in Semiconductor Quantum Dots under Intense Excitation

A thorough understanding of the photocarrier relaxation dynamics in semiconductor quantum dots (QDs) is essential to optimize their device performance. However, resolving hot carrier kinetics under high excitation conditions with multiple excitons per dot is challenging because it convolutes several ultrafast processes, including Auger recombination, carrier-phonon scattering, and phonon thermalization. Here, we report a systematic study of the lattice dynamics induced by intense photoexcitation in PbSe QDs. By probing the dynamics from the lattice perspective using ultrafast electron diffraction together with modeling the correlated processes collectively, we can differentiate their roles in photocarrier relaxation. The results reveal that the observed lattice heating time scale is longer than that of carrier intraband relaxation obtained previously using transient optical spectroscopy. Moreover, we find that Auger recombination efficiently annihilates excitons and speeds up lattice heating. This work can be readily extended to other semiconductor QDs systems with varying dot sizes.

Single particle level dynamics of photoactivation and suppression of Auger recombination in aqueous Cu-doped CdS quantum dots

Cu-doped CdS quantum dots (QDs) have been synthesized in water using 3-mercaptopropionic acid (3-MPA) as the capping agent. They exhibit intense photoluminescence and excellent color tunability, unlike most of the QDs synthesized/dispersed in water so far. Complete characterization of these aqueous doped CdS QDs has been performed for the first time, along with a single particle level elucidation of their exciton dynamics using fluorescence correlation spectroscopy. Photoactivation via dim/dark to bright particle conversion is observed at higher excitation powers. Dispersive blinking kinetics in undoped QDs reflects the involvement of a broad distribution of trap states. A lesser extent of dispersity is observed for doped QDs, in which hole-capture by Cu-defect states predominates. Excitation fluence dependence of the blinking rate highlights the role of Auger recombination in undoped QDs, which is suppressed significantly upon doping, due to disruption of the electron-hole correlation.

Blue light-emitting diodes based on colloidal quantum dots with reduced surface-bulk coupling

To industrialize printed full-color displays based on quantum-dot light-emitting diodes, one must explore the degradation mechanism and improve the operational stability of blue electroluminescence. Here, we report that although state-of-the-art blue quantum dots, with monotonically-graded core/shell/shell structures, feature near-unity photoluminescence quantum efficiency and efficient charge injection, the significant surface-bulk coupling at the quantum-dot level, revealed by the abnormal dipolar excited state, magnifies the impact of surface localized charges and limits operational lifetimes. Inspired by this, we propose blue quantum dots with a large core and an intermediate shell featuring nonmonotonically-graded energy levels. This strategy significantly reduces surface-bulk coupling and tunes emission wavelength without compromising charge injection. Using these quantum dots, we fabricate bottom-emitting devices with emission colors varying from near-Rec.2020-standard blue to sky blue. At an initial luminance of 1000 cd m^-2, these devices exhibit T₉₅ operational lifetimes ranging from 75 to 227 h, significantly surpassing the existing records.

Parabolic Potential Surfaces Localize Charge Carriers in Nonblinking Long-Lifetime "Giant" Colloidal Quantum Dots

Materials for studying biological interactions and for alternative energy applications are continuously under development. Semiconductor quantum dots are a major part of this landscape due to their tunable optoelectronic properties. Size-dependent quantum confinement effects have been utilized to create materials with tunable bandgaps and Auger recombination rates. Other mechanisms of electronic structural control are under investigation as not all of a material's characteristics are affected by quantum confinement. Demonstrated here is a new structure-property concept that imparts the ability to spatially localize electrons or holes within a core/shell heterostructure by tuning the charge carrier's kinetic energy on a parabolic potential energy surface. This charge carrier separation results in extended radiative lifetimes and in continuous emission at the single-nanoparticle level. These properties enable new applications for optics, facilitate novel approaches such as time-gated single-particle imaging, and create inroads for the development of other new advanced materials.

Facet Engineering for Amplified Spontaneous Emission in Metal Halide Perovskite Nanocrystals

Auger recombination and thermalization time are detrimental in reducing the gain threshold of optically pumped semiconductor nanocrystal (NC) lasers for future on-chip nanophotonic devices. Here, we report the design strategy of facet engineering to reduce the gain threshold of amplified spontaneous emission by manyfold in NCs of the same concentration and edge length. We achieved this hallmark result by controlling the Auger recombination rates dominated by processes involving NC volume and thermalization time to the emitting states by optimizing the number of facets from 6 (cube) to 12 (rhombic dodecahedron) and 26 (rhombicuboctahedrons) in CsPbBr₃ NCs. For instance, we demonstrate a 2-fold reduction in Auger recombination rates and thermalization time with increased number of facets. The gain threshold can be further reduced ∼50% by decreasing the sample temperature to 4 K. Our systematic studies offer a new method to reduce the gain threshold that ultimately forms the basis of nanolasers.

A High-Quality CdSe/CdS/ZnS Quantum-Dot-Based FRET Aptasensor for the Simultaneous Detection of Two Different Alzheimer's Disease Core Biomarkers

The simultaneous detection of two different biomarkers for the point-of-care diagnosis of major diseases, such as Alzheimer’s disease (AD), is greatly challenging. Due to the outstanding photoluminescence (PL) properties of quantum dots (QDs), a high-quality CdSe/CdS/ZnS QD-based fluorescence resonance energy transfer (FRET) aptasensor for simultaneously monitoring the amyloid-β oligomers (AβO) and tau protein was proposed. By engineering the interior inorganic structure and inorganic−organic interface, water-soluble dual-color CdSe/CdS/ZnS QDs with a near-unity PL quantum yield (>90%) and mono-exponential PL decay dynamics were generated. The π−π stacking and hydrogen bond interaction between the aptamer-functionalized dual-color QDs and gold nanorods@polydopamine (Au NRs@PDA) nanoparticles resulted in significant fluorescence quenching of the QDs through FRET. Upon the incorporation of the AβO and tau protein, the fluorescence recovery of the QDs-DNA/Au NRs@PDA assembly was attained, providing the possibility of simultaneously assaying the two types of AD core biomarkers. The lower detection limits of 50 pM for AβO and 20 pM for the tau protein could be ascribed to the distinguishable and robust fluorescence of QDs and broad spectral absorption of Au NRs@PDA. The sensing strategy serves as a viable platform for the simultaneously monitoring of the core biomarkers for AD and other major diseases.

Controlled Core/Crown Growth Enables Blue-Emitting Colloidal Nanoplatelets with Efficient and Pure Photoluminescence

Colloidal semiconductor CdSe nanoplatelets (NPLs) feature ultranarrow and anisotropic emissions. However, the optical performance of blue-emitting NPLs is deteriorated by trap states, currently exhibiting tainted emissions and inferior photoluminescence quantum yields (PLQYs). Here, near trap-free blue-emitting NPLs are achieved by the controlled growth of the core/crown. Deep trap states in NPLs can be partially suppressed with the asymmetrical crown growth and are further suppressed with the growth of the small core and the alloyed symmetrical crown, yielding NPLs with pure blue emissions and near-unity PLQYs. Exciton dynamic research based on these NPLs indicates that the trap emission stems from surface traps. Besides, light-emitting diodes exhibiting ultranarrow emission centered around 461 nm with full-width-at-half-maximums down to 11 nm are fabricated using these NPLs.

Exciton Dynamics in Colloidal CdS Quantum Dots with Intense and Stokes Shifted Photoluminescence in a Single Decay Channel

CdS quantum dots (QDs), synthesized by a sol-gel method, exhibit significantly Stokes shifted bright photoluminescence (PL), predominantly from the trap states. Surprisingly, the PL decay at the emission maximum is single-exponential. This is an unusual observation for as-prepared QDs and indicates a narrow distribution in the nature of trap states. A closer look reveals an additional fast component for the decays at shorter emission wavelengths, presumably due to the band edge emission, which remains elusive in the steady-state spectra. Indeed, a significantly narrower and blue-shifted emission band is observed in the decay-associated spectra. The contribution of this component to the steady-state PL intensity is shown to be overwhelmed by that of the significantly stronger trap emission. Exciton dynamics in the quantum dots is elucidated using transient absorption spectra, in which the stimulated emission is observed even at low pump power.

CdS Quantum Dots as Potent Photoreductants for Organic Chemistry Enabled by Auger Processes

Strong reducing agents (<-2.0 V vs saturated calomel electrode (SCE)) enable a wide array of useful organic chemistry, but suffer from a variety of limitations. Stoichiometric metallic reductants such as alkali metals and SmI₂ are commonly employed for these reactions; however, considerations including expense, ease of use, safety, and waste generation limit the practicality of these methods. Recent approaches utilizing energy from multiple photons or electron-primed photoredox catalysis have accessed reduction potentials equivalent to Li⁰ and shown how this enables selective transformations of aryl chlorides via aryl radicals. However, in some cases, low stability of catalytic intermediates can limit turnover numbers. Herein, we report the ability of CdS nanocrystal quantum dots (QDs) to function as strong photoreductants and present evidence that a highly reducing electron is generated from two consecutive photoexcitations of CdS QDs with intermediate reductive quenching. Mechanistic experiments suggest that Auger recombination, a photophysical phenomenon known to occur in photoexcited anionic QDs, generates transient thermally excited electrons to enable the observed reductions. Using blue light-emitting diodes (LEDs) and sacrificial amine reductants, aryl chlorides and phosphate esters with reduction potentials up to -3.4 V vs SCE are photoreductively cleaved to afford hydrodefunctionalized or functionalized products. In contrast to small-molecule catalysts, QDs are stable under these conditions and turnover numbers up to 47 500 have been achieved. These conditions can also effect other challenging reductions, such as tosylate protecting group removal from amines, debenzylation of benzyl-protected alcohols, and reductive ring opening of cyclopropane carboxylic acid derivatives.

Multiple-Route Exciton Recombination Dynamics and Improved Stability of Perovskite Quantum Dots by Plasmonic Photonic Crystal

We have studied the excited-state exciton recombination dynamics of perovskite quantum dots (QDs) through time-resolved photoluminescence (PL), PL blinking, PL intensity-dependent lifetime modulation, and long-term photostability tests. The various spectroscopic characterizations elucidate that the perovskite QDs have multiple intrinsic exciton recombination routes even in a single QD, i.e., exciton, biexciton, and positive/negative trions, which are dissimilarly contributed to ON and OFF state emissions. We also find that the enhanced radiative recombination from placing green QDs on a photonic Ag nanotip array induces notably improved long-term PL stability. We consider that the accelerated radiative recombination of QDs by strong coupling with the plasmonics of the photonic Ag nanotip array, while eliminating nonradiative pathways, is proven to be a critical factor for improved long-term stability.

Complete Mapping of Interacting Charging States in Single Coupled Colloidal Quantum Dot Molecules

Colloidal quantum dots (CQDs), major building blocks in modern optoelectronic devices, have so far been synthesized with only one emission center where the exciton resides. Recent development of coupled colloidal quantum dots molecules (CQDM), where two core-shell CQDs are fused to form two emission centers in close proximity, allows exploration of how charge carriers in one CQD affect the charge carriers in the other CQD. Cryogenic single particle spectroscopy reveals that while CQD monomers manifest a simple emission spectrum comprising a main emission peak with well-defined phonon sidebands, CQDMs exhibit a complex spectrum with multiple peaks that are not all spaced according to the known phonon frequencies. Based on complementary emission polarization and time-resolved analysis, this is assigned to fluorescence of the two coupled emission centers. Moreover, the complex peak structure shows correlated spectral diffusion indicative of the coupling between the two emission centers. Utilizing Schrödinger-Poisson self-consistent calculations, we directly map the spectral behavior, alternating between neutral and charged states of the CQDM. Spectral shifts related to electrostatic interaction between a charged emission center and the second emission center are thus fully mapped. Furthermore, effects of moving surface charges are identified, whereby the emission center proximal to the charge shows larger shifts. Instances where the two emission centers are negatively charged simultaneously are also identified. Such detailed mapping of charging states is enabled by the coupling within the CQDM and its anisotropic structure. This understanding of the coupling interactions is progress toward quantum technology and sensing applications based on CQDMs.

Effectual Interface and Defect Engineering for Auger Recombination Suppression in Bright InP/ZnSeS/ZnS Quantum Dots

The main issue in developing a quantum dot light-emitting diode (QLED) display lies in successfully replacing heavy metals with environmentally benign materials while maintaining high-quality device performance. Nonradiative Auger recombination is one of the major limiting factors of QLED performance and should ideally be suppressed. This study scrutinizes the effects of the shell structure and composition on photoluminescence (PL) properties of InP/ZnSeS/ZnS quantum dots (QDs) through ensemble and single-dot spectroscopic analyses. Employing gradient shells is discovered to suppress Auger recombination to a high degree, allowing charged QDs to be luminescent comparatively with neutral QDs. The "lifetime blinking" phenomenon is observed as evidence of suppressed Auger recombination. Furthermore, single-QD measurements reveal that gradient shells in QDs reduce spectral diffusion and elevate the energy barrier for charge trapping. Shell composition dependency in the gradience effect is observed. An increase in the ZnS composition (ZnS >50%) in the gradient shell introduces lattice mismatch between the core and the shell and therefore rather reverses the effect and reduces the QD performance.

Nonequilibrium Carrier Transport in Quantum Dot Heterostructures

Understanding carrier dynamics and transport in quantum dot based heterostructures is crucial for unlocking their full potential for optoelectronic applications. Here we report the direct visualization of carrier propagation in PbS CQD solids and quantum-dot-in-perovskite heterostructures using femtosecond transient absorption microscopy. We reveal three distinct transport regimes: an initial superdiffusive transport persisting over hundreds of femtoseconds, an Auger-assisted subdiffusive transport before thermal equilibrium is achieved, and a final hopping regime. We demonstrate that the superdiffusive transport lengths correlate strongly with the degree of energetic disorder and carrier delocalization. By tailoring the perovskite content in heterostructures, we obtained a superdiffusive transport length exceeding 90 nm at room temperature and an equivalent diffusivity of up to 106 cm² s^-1, which is 4 orders of magnitude higher than the steady-state values. These findings introduce promising strategies to harness nonequilibrium transport phenomena for more efficient optoelectronic devices.

Förster resonance energy transfer outpaces Auger recombination in CdTe/CdS quantum dots-rhodamine101 molecules system upon compression

Förster resonance energy transfer (FRET) and Auger recombination in quantum dots (QDs)-molecules system are important mechanisms for affecting performance of their optoelectronic and photosynthesis devices. However, exploring an effective strategy to promote FRET and suppress Auger recombination simultaneously remains a daunting challenge. Here, we report that FRET process is promoted and Auger recombination process is suppressed in CdTe/CdS QDs-Rhodamine101 (Rh101) molecules system upon compression. The greatly improved FRET is attributed to the shortened donor-acceptor distance and increased the number of molecules attached to QDs induced by pressure. The reduced Auger recombination is ascribed to the formation of an alloy layer at the core/shell interface. The FRET can occur 70 times faster than Auger recombination under a high pressure of 0.9 GPa. Our findings demonstrate that high pressure is a robust tool to boost FRET and simultaneously suppress Auger recombination, and provides a new route to QDs-molecules applications.

Ab initio nonadiabatic molecular dynamics of charge carriers in metal halide perovskites

Photoinduced nonequilibrium processes in nanoscale materials play key roles in photovoltaic and photocatalytic applications. This review summarizes recent theoretical investigations of excited state dynamics in metal halide perovskites (MHPs), carried out using a state-of-the-art methodology combining nonadiabatic molecular dynamics with real-time time-dependent density functional theory. The simulations allow one to study evolution of charge carriers at the ab initio level and in the time-domain, in direct connection with time-resolved spectroscopy experiments. Eliminating the need for the common approximations, such as harmonic phonons, a choice of the reaction coordinate, weak electron-phonon coupling, a particular kinetic mechanism, and perturbative calculation of rate constants, we model full-dimensional quantum dynamics of electrons coupled to semiclassical vibrations. We study realistic aspects of material composition and structure and their influence on various nonequilibrium processes, including nonradiative trapping and relaxation of charge carriers, hot carrier cooling and luminescence, Auger-type charge-charge scattering, multiple excitons generation and recombination, charge and energy transfer between donor and acceptor materials, and charge recombination inside individual materials and across donor/acceptor interfaces. These phenomena are illustrated with representative materials and interfaces. Focus is placed on response to external perturbations, formation of point defects and their passivation, mixed stoichiometries, dopants, grain boundaries, and interfaces of MHPs with charge transport layers, and quantum confinement. In addition to bulk materials, perovskite quantum dots and 2D perovskites with different layer and spacer cation structures, edge passivation, and dielectric screening are discussed. The atomistic insights into excited state dynamics under realistic conditions provide the fundamental understanding needed for design of advanced solar energy and optoelectronic devices.

Enhancing Dielectric Screening for Auger Suppression in CdSe/CdS Quantum Dots by Epitaxial Growth of ZnS Shell

Auger recombination is the main nonradiative process in multicarrier states of high-quality quantum dots (QDs). For the most-studied CdSe/CdS core/shell QDs, we effectively reduce the biexciton Auger rate by enhancing dielectric screening of band-edge carriers via epitaxial growth of additional ZnS shells. Super volume scaling of negative-trion Auger lifetime for CdSe/CdS core/shell QDs is achieved with the outermost ZnS shells. The volume of CdSe/CdS/ZnS QDs can be less than half that of CdSe/CdS QDs with the same negative-trion Auger lifetime. Auger suppression by the ZnS shells is more pronounced for QDs with wave functions of band-edge carriers spreading close to the inorganic-organic interface, such as CdSe/CdS QDs with small cores. A maximum drop of biexciton Auger rate of ∼50% and a maximum enhancement of biexciton emission quantum yield of 75% are achieved. Auger engineering by dielectric screening opens up new opportunities to improve the emission properties of multicarrier states in QDs.

Negative Trion Auger Recombination in Highly Luminescent InP/ZnSe/ZnS Quantum Dots

Upon demonstrating self-luminescing quantum dot based light-emitting devices (QD-LEDs), rapid Auger recombination acts as one of the performance limiting factors. Here, we report the Auger processes of highly luminescent InP/ZnSe/ZnS QDs with different midshell structures that affect the performances of QD-LEDs. Transient PL measurements reveal that exciton-exciton binding energy is dependent on the midshell thickness, which implies that the intercarrier Coulomb interaction caused by the introduction of excess charges may come under the influence of midshell thickness which is in contrast with the nearly stationary single exciton behavior. Photochemical electron-doping and optical measurements of a single QD show that negative trion Auger recombination exhibits strong correlation with midshell thickness, which is supported by the dynamics of a hot electron generated in the midshell. These results highlight the role of excess electrons and the effects of engineered shell structures in InP/ZnSe/ZnS QDs, which eventually determine the Auger recombination and QD-LED performances.

Testing the fate of nascent holes in CdSe nanocrystals with sub-10 fs pump-probe spectroscopy

Numerous studies have reported that transient absorption spectra in core CdSe nanocrystals do not register state filling in 1Sh, an absence which has profound consequences in light-emitting applications. It has been assigned alternatively to rapid hole trapping, or to distribution over a dense degenerate valence band manifold which includes dark states. Here we attempt to observe early contributions of nascent holes to the bleaching of the band edge exciton transition by conducting 1Se1Sh pump-1Se1Sh probe spectroscopy with <10 fs laser pulses on organic ligand passivated CdSe crystals. The results show no rapidly hole-state filling effects in transient absorption measurements even at the earliest delay, despite the use of pulses which are capable of resolving all dissipation mechanisms reflected in the homogeneous 1Se1Sh bandwidth. This proves that neither hole trapping nor rapid redistribution of the nascent hole over energetically available valence band states can explain the absence of hole contributions to band edge bleaching, calling for a mechanistic review of this phenomenon.

Reducing the impact of Auger recombination in quasi-2D perovskite light-emitting diodes

Rapid Auger recombination represents an important challenge faced by quasi-2D perovskites, which induces resulting perovskite light-emitting diodes' (PeLEDs) efficiency roll-off. In principle, Auger recombination rate is proportional to materials' exciton binding energy (E_b). Thus, Auger recombination can be suppressed by reducing the corresponding materials' E_b. Here, a polar molecule, p-fluorophenethylammonium, is employed to generate quasi-2D perovskites with reduced E_b. Recombination kinetics reveal the Auger recombination rate does decrease to one-order-of magnitude lower compared to its PEA⁺ analogues. After effective passivation, nonradiative recombination is greatly suppressed, which enables resulting films to exhibit outstanding photoluminescence quantum yields in a broad range of excitation density. We herein demonstrate the very efficient PeLEDs with a peak external quantum efficiency of 20.36%. More importantly, devices exhibit a record luminance of 82,480 cd m^-2 due to the suppressed efficiency roll-off, which represent one of the brightest visible PeLEDs yet.

Novel carbazole-acridine-based hole transport polymer for low turn-on voltage of green quantum dot light-emitting diodes

We synthesized a novel hole transporting polymer (P-CzAc) for solution-processable green QD-LEDs. Compared to PVK, the P-CzAz-based device showed higher device performance.

Biexciton Dynamics in Single Colloidal CdSe Quantum Dots

The investigation of biexciton dynamics in single colloidal quantum dots (QDs) is critical to biexciton-based applications. Generally, a biexciton exhibits an extremely low photoluminescence (PL) quantum yield as well as very fast PL decay due to strong nonradiative Auger recombination, making it difficult to investigate the biexciton dynamics. Here, we develop a quantitative method based on intensity- and time-resolved photon statistics to investigate the biexciton dynamics in single colloidal QDs. This robust method can be used under high-excitation conditions to determine the absolute radiative and Auger recombination rates of both neutral and charged biexciton states in a single QD level, and the corresponding ratios between the two states agree with the theoretical predictions of the asymmetric band structures of CdSe-based QDs. Furthermore, the surface traps are found to provide additional nonradiative recombination pathways for the biexcitons, and their contributions are quantified by the method.

Optical and Electronic Properties of Colloidal CdSe Quantum Rings

Luminescent colloidal CdSe nanorings are a recently developed type of semiconductor structure that have attracted interest due to the potential for rich physics arising from their nontrivial toroidal shape. However, the exciton properties and dynamics of these materials with complex topology are not yet well understood. Here, we use a combination of femtosecond vibrational spectroscopy, temperature-resolved photoluminescence (PL), and single-particle measurements to study these materials. We find that on transformation of CdSe nanoplatelets to nanorings, by perforating the center of platelets, the emission lifetime decreases and the emission spectrum broadens due to ensemble variations in the ring size and thickness. The reduced PL quantum yield of nanorings (∼10%) compared to platelets (∼30%) is attributed to an enhanced coupling between (i) excitons and CdSe LO-phonons at 200 cm^-1 and (ii) negatively charged selenium-rich traps, which give nanorings a high surface charge (∼-50 mV). Population of these weakly emissive trap sites dominates the emission properties with an increased trap emission at low temperatures relative to excitonic emission. Our results provide a detailed picture of the nature of excitons in nanorings and the influence of phonons and surface charge in explaining the broad shape of the PL spectrum and the origin of PL quantum yield losses. Furthermore, they suggest that the excitonic properties of nanorings are not solely a consequence of the toroidal shape but also a result of traps introduced by puncturing the platelet center.

Electrochemical Charging Effect on the Optical Properties of InP/ZnSe/ZnS Quantum Dots

Semiconductor quantum dots (QDs) are spotlighted as a key type of emissive material for the next generation of light-emitting diodes (LEDs). This work presents the investigation of the electrochemical charging effect on the absorption and emission of the InP/ZnSe/ZnS QDs with different mid-shell thicknesses. The excitonic peak is gradually bleached during electrochemical charging, which is caused by 1S_e (or 1S_h ) state filling when the electron (or hole) is injected into the InP core. Additional charges also lead to photoluminescence (PL) intensity reduction, however, it is greatly mitigated as the mid-shell thickness increases. Various PL measurements reveal that the PL reduction under electrochemical charging is attributed to the acoustic phonon-assisted Auger recombination. Here, the Auger recombination in QDs with a thick mid-shell is reduced under the electrochemically charged condition, indicating that QDs with larger volume are more stable emitters in charge-injecting devices such as LEDs. Furthermore, the negative and positive trion Auger recombination rate constants are estimated, respectively, via electrochemical charging. The negative trion Auger rate constants decrease with an increase in the mid-shell thickness increases, whereas the positive trion Auger rate constants are not heavily reliant on the mid-shell thickness.

Electrical control of single-photon emission in highly charged individual colloidal quantum dots

Electron transfer to an individual quantum dot promotes the formation of charged excitons with enhanced recombination pathways and reduced lifetimes. Excitons with only one or two extra charges have been observed and exploited for very efficient lasing or single-quantum dot light-emitting diodes. Here, by room-temperature time-resolved experiments on individual giant-shell CdSe/CdS quantum dots, we show the electrochemical formation of highly charged excitons containing more than 12 electrons and 1 hole. We report the control over intensity blinking, along with a deterministic manipulation of quantum dot photodynamics, with an observed 210-fold increase in the decay rate, accompanied by 12-fold decrease in the emission intensity, while preserving single-photon emission characteristics. These results pave the way for deterministic control over the charge state, and room-temperature decay rate engineering for colloidal quantum dot-based classical and quantum communication technologies.

Surface passivation extends single and biexciton lifetimes of InP quantum dots

Indium phosphide quantum dots (InP QDs) are nontoxic nanomaterials with potential applications in photocatalytic and optoelectronic fields. Post-synthetic treatments of InP QDs are known to be essential for improving their photoluminescence quantum efficiencies (PLQEs) and device performances, but the mechanisms remain poorly understood. Herein, by applying ultrafast transient absorption and photoluminescence spectroscopies, we systematically investigate the dynamics of photogenerated carriers in InP QDs and how they are affected by two common passivation methods: HF treatment and the growth of a heterostructure shell (ZnS in this study). The HF treatment is found to improve the PLQE up to 16-20% by removing an intrinsic fast hole trapping channel (τ h,non = 3.4 ± 1 ns) in the untreated InP QDs while having little effect on the band-edge electron decay dynamics (τ e = 26-32 ns). The growth of the ZnS shell, on the other hand, is shown to improve the PLQE up to 35-40% by passivating both electron and hole traps in InP QDs, resulting in both a long-lived band-edge electron (τ e > 120 ns) and slower hole trapping lifetime (τ h,non > 45 ns). Furthermore, both the untreated and the HF-treated InP QDs have short biexciton lifetimes (τ xx ∼ 1.2 ± 0.2 ps). The growth of an ultra-thin ZnS shell (∼0.2 nm), on the other hand, can significantly extend the biexciton lifetime of InP QDs to 20 ± 2 ps, making it a passivation scheme that can improve both the single and multiple exciton lifetimes. Based on these results, we discuss the possible trap-assisted Auger processes in InP QDs, highlighting the particular importance of trap passivation for reducing the Auger recombination loss in InP QDs.